WO2016081929A1 - Dispositif et procédés de fabrication de substrats de dioxyde de silicium ayant un motif sinusoïdal - Google Patents

Dispositif et procédés de fabrication de substrats de dioxyde de silicium ayant un motif sinusoïdal Download PDF

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Publication number
WO2016081929A1
WO2016081929A1 PCT/US2015/062039 US2015062039W WO2016081929A1 WO 2016081929 A1 WO2016081929 A1 WO 2016081929A1 US 2015062039 W US2015062039 W US 2015062039W WO 2016081929 A1 WO2016081929 A1 WO 2016081929A1
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Prior art keywords
pattern
silicon
graphene
patterned
oxide
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PCT/US2015/062039
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English (en)
Inventor
Kang Wang
Aryan NAVABI-SHIRAZI
Mohsen YAZDANI
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The Regents Of The University Of California
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Publication of WO2016081929A1 publication Critical patent/WO2016081929A1/fr
Priority to US15/598,546 priority Critical patent/US20170324166A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/126—Preparation of silica of undetermined type
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/364—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor
    • H01Q1/368—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor using carbon or carbon composite
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/01—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the shape of the antenna or antenna system

Definitions

  • the present technology pertains generally to methods of production of patterned graphene and associated devices and more particularly to devices and methods for producing patterned conductor films such as graphene sheets with tunable periodic and/or non-periodic sinusoidal corrugations.
  • Graphene has a sheet structure of carbon atoms that have been tightly packed into a two-dimensional honeycomb crystal lattice.
  • the geometrical structure of graphene provides a number of useful mechanical, chemical and electrical characteristics that could be adapted to a wide range of potential applications including nanoelectronics, nanophotonics, and sensor technologies.
  • charge carriers electrosprays
  • charge carriers can travel thousands interatomic distances without scattering.
  • perturbations in the Dirac equation can occur with lattice deformations producing changes in the mobility of electrons between sub-lattices.
  • Corrugations or ripples are an intrinsic feature of graphene sheets and have been shown to strongly influence the electronic properties of the sheets by inducing effective magnetic fields and by changing local potentials.
  • the curvature of these intrinsic ripples can cause electrochemical potentials to vary spatially due to rehybridization effects which can also affect the density of states.
  • Intrinsic ripple sizes have also been characterized by applying in-plane magnetic fields.
  • the present technology provides a highly periodic sinusoidal silicon dioxide substrates fabricated by patterning a silicon base into a sinusoidal S1O2 substrate.
  • the substrates can be patterned with both periodic and/or non-periodic ripples or corrugations, for example.
  • Other oxide patterns are also possible that are designed to impart selected features or morphologies to layers of material that have been applied to the patterned surface.
  • the substrates can be used to produce graphene sheets patterned with corrugations or ripples that have tunable dimensions that can be used to provide functional elements with selected properties for use in a variety of graphene based devices,
  • the sinusoidal silicon dioxide substrates can be used in any order.
  • Sinusoidal metallic gratings can be realized by depositing a thin conducting film with periodicities of the patterned substrate ranging in the visible light wavelength.
  • Metallic gratings can be used in photonics for Smith-Purcell radiation. It can also be used for the formation of microstrip patch and dual band antennas, for example.
  • one or more graphene layers can be transferred to the top of the sinusoidal substrate, creating a sinusoidal graphene sheet or laminate.
  • the substrates can also be used with materials other than graphene, such as metals or conductive polymers.
  • the conformed layers of conductor material can remain on the patterned oxide surface or the patterned material can be separated from the substrate in some instances.
  • These new structures can be used for various applications in electronics, photonics, and electromagnetics.
  • the sinusoidal graphene sheet can be used for radiation in the GHz or THz range.
  • a silicon wafer (100) was thermally oxidized to grow a 90 nm oxide to serve as an etch mask.
  • a stepper was used to perform
  • a method for producing nanoscale, patterned oxide substrates that can be used for patterning graphene and other materials.
  • Another aspect of the technology is to provide a method for
  • a method is provided thai allows control over the electronic and other properties of patterned stacks of one or more graphene sheets by controlling the dimensions, strain and corrugations or ripples of the sheets,
  • Another aspect of the technology is to allow the miniaturization of devices and provide control over device characteristics by controlling the orientation, wavelength and amplitude of the graphene sheet corrugations.
  • FIG. 1 is a schematic flow diagram of a method for producing
  • FIG. 2A is a schematic cross-section of a patch antenna
  • d is the depth of the antenna, i.e. vertical distance from trough to crest
  • ⁇ is the peak to peak distance or the substrate periodicity
  • FIG. 2B is a detailed view of a corrugation of the device shown in FIG. 2A with a conformed graphene sheet on the substrate.
  • FIG. 2C is a schematic representation of a one or more periodic rippled graphene sheets that can be thought of as a series of resistors, each representing one period, R ripp .
  • R ri pp For each resistance R ri pp, W is the width and S is the arc length is the actual length of the resistor. These dimensions may be used to calculate the pn PP and a r i PP .
  • FIG. 3A is a graph showing the change in conductivity (mS) of
  • FIG. 3B is a graph depicting the observed change in conductivity of a bilayer stacked graphene (BLSG) and trilayer stacked graphene (TLSG) sheet structures.
  • the a r i PP of TLSG decreases when it is rippled, but decreases dramatically for substrates with periodicity of 1000 nm.
  • FIG. 4 is a graph depicting the Red shift in the G peak for the rippled TLSG structure.
  • the red shift drastically increases for sinusoidal substrates of periodicity 1000 nm.
  • FIG. 5 is a graph depicting the change in calculated conductivity versus the shift in the G peak.
  • the o r i PP was calculated by normalizing the resistance of TLSG with the number of ripples and then using the arc length of the TLSG as the actual length.
  • the change in calculated conductivity directly follows the change in the G peak loation.
  • FIG. 6 is a graph depicting the amount of strain in rippled TLSG that was calculated assuming a 14.2 cm "1 red shift for every percent strain.
  • p ripp is the reciprocal of o r i PP .
  • the figure shows direct correlation between the amount of strain and the change in the caluclated resistivity.
  • FIG. 7 is a graph of return loss versus frequency for different
  • FIG. 8 is a schematic perspective view of a single port embodiment of a microstrip patch antenna with a square shaped patch.
  • FIG. 9 is a top view of a dual port embodiment of a microstrip patch antenna.
  • FIG. 1 through FIG. 9 illustrate the substrates and methods. It will be appreciated that the methods may vary as to the specific steps and sequence and the devices may vary as to structural details without departing from the basic concepts as disclosed herein. The method steps are merely exemplary of the order that these steps may occur. The steps may occur in any order that is desired, such that it still performs the goals of the claimed technology.
  • FIG. 1 one method 10 for producing characteristic sinusoidal graphene sheets with the fabrication and use of a specifically patterned silicon oxide substrate is generally described to illustrate the ability to control the properties of the graphene sheets with the nanoscale substrate.
  • the illustration in FIG. 1 is for the fabrication of graphene structures, the substrate and methods can be adapted to layers of metals and other materials as well.
  • the sheet dimensions, strain as well as the orientation, wavelength and amplitude of the graphene sheet corrugations can be selected to produce a structure with predictable properties.
  • the selected parameters of the final graphene sheet structure will direct the selection of the dimensions and nanoscale patterns of the substrate that will be produced.
  • the substrate surface can have periodic or non-periodic corrugations on the surface.
  • corrugations can be patterned in different directions. Any set of nanoscale surface features or patterns can be selected at block 12.
  • a silicon base is provided of suitable dimensions defined by the intended device or device element.
  • a conventional silicon wafer is sized and thermally oxidized to grow an oxide on a top surface to serve as an etch mask at block 14 of FIG. 1 .
  • the initial thermal oxide mask that was grown on the silicon base at block 14 is then patterned using conventional photolithography at block 16.
  • the etch mask can be patterned with a photoresist to form parallel nanoscale trenches in the resist separated by a defined distance, preferably the same distance as the width of a trench.
  • the width of the trench preferably should be one-half of the desired periodicity.
  • the substrate base silicon is then fully patterned using a combination of dry and wet etching of the silicon and silicon oxide, in one embodiment.
  • the patterned oxide mask is then etched to expose areas of the silicon base and to etch the silicon below.
  • the oxide etch mask is then removed.
  • dry etching can be used to etch the exposed S1O2 etch mask and create trenches in the oxide, spaced a defined distance apart, and to expose the silicon
  • the etched base is etched a second time to produce the trenches in the silicon.
  • the exposed silicon can be anistropically etched to form trenches or other features in the silicon base.
  • the remaining oxide mask is then removed after the silicon base is etched.
  • etched silicon surface that is produced at block 18.
  • This oxide layer preferably should be one-half of the periodicity to ensure a smooth sinusoidal pattern. However, the surface topology does not appear to be sinusoidal at this stage.
  • the oxide mask produced at block 20 is then etched and removed at block 22.
  • a second oxide mask preferably as thick as one-half of the periodicity, is formed on the smoother silicon to form the final oxide substrate.
  • the produced substrate has surface features that are
  • one or more graphene sheets are deposited on the prepared oxide surface of the substrate and the sheets conform to the surface features of the oxide surface of the substrate.
  • the transfer of the graphene sheets can be accomplished using a standard wet transfer process or other techniques for depositing sheets.
  • the material is deposited and formed directly on the prepared substrate surface.
  • the conformed graphene or other material may remain on the surface of the substrate to support the material.
  • the conformed layer of material is separated from the substrate and used independently.
  • a highly periodic sinusoidal silicon dioxide substrate was formed by patterning a silicon base into a sinusoidal S1O2 substrate using steps shown in FIG. 1 .
  • a silicon wafer (100) was thermally oxidized to grow a 90 nm oxide to serve as an etch mask.
  • a stepper was used to perform photolithography using ULTRA-iTM 123 i-line photoresist and 300 nm wide trenches, 300 nm apart, were patterned in the photoresist. Dry etching was used to etch the exposed S1O2 etch mask and create 300 nm wide trenches in the oxide, spaced 300 nm apart, exposing the silicon beneath.
  • a 300 nm thermal oxide was then grown on the exposed silicon.
  • the surface topography did not appear sinusoidal at this stage.
  • the smoother silicon beneath the thermal oxide was used instead by removing the 300 nm thermal oxide using buffered oxide etching (BOE).
  • the final substrate oxide surface became sinusoidal with a depth of 210 nm and a periodicity of 600 nm.
  • Imaging of the final substrate disclosed a highly repetitive uniform sinusoidal oxide substrate surface.
  • the substrate was covered with a thin gold layer by sputtering to improve the SEM image quality.
  • Each patterned area was 200 ⁇ by 350 ⁇ .
  • graphene, graphene sheets were prepared and deposited on the surface of the highly periodic sinusoidal silicon dioxide substrate that was produced in Example 1 .
  • Hall bar structures were fabricated by patterning the graphene
  • a third layer of graphene was then transferred to the top of the BLSG surface and an almost complete conformity of the graphene films was observed with the placement of the third layer. The percentage of observed suspended areas was significantly reduced with the transfer and processing of the third layer. SEM images were taken of the sinusoidal tri-layer stacked graphene.
  • FIG. 2A An embodiment of the substrate with a sinusoidally rippled periodic (e.g., corrugated) surface is shown schematically in FIG. 2A through FIG. 2C.
  • a schematic cross-section of a patch antenna is used as an example to illustrate this configuration.
  • a substrate 28 is shown patterned with a periodically rippled (corrugated) surface 30 in one dimension, where d is the depth of the antenna corrugation, i.e., vertical distance from trough to crest, and ⁇ is the peak to peak distance or the substrate periodicity.
  • a layer 32 of one or more graphene sheets is disposed on the surface of the substrate as is also shown.
  • the antenna comprises a silicon base substrate 28 with an oxide surface 34 overlaid with one or more graphene sheets to form layer 32.
  • layer as used herein can encompass multiple layers as well, and that multiple graphene sheets can be considered a single layer of multiple sheets or multiple layers of a single sheet.
  • FIG. 2C shows a schematic representation of one or more periodic corrugated or rippled graphene sheet layers 32 used for testing.
  • the corrugated graphene sheets can be thought of as a series of resistors, each representing one period, Rn PP .
  • Rn PP For each resistance Rn PP , W is the width and S is the arc length is the actual length of the resistor as shown in FIG. 2B.
  • These dimensions may be used to calculate the pn PP and On PP .
  • the 4- terminal resistance R 4 T to the number of ripples was normalized.
  • the channel length L Ch of rippled TLSGs was observed to be 280 ⁇ .
  • the number of ripples within the channel length varied for each periodicity, ⁇ ,, since the channel length was a constant 280 ⁇ .
  • Each period can be thought of as a resistor R where i is for a device with a
  • the conductivity for one period of sinusoidal graphene can be
  • FIG. 3B A graph depicting the observed change in conductivity (a r ip P ) of a bilayer stacked graphene (BLSG) and trilayer stacked graphene (TLSG) sheet structures for different ripple riodicities is shown in FIG. 3B.
  • the calculated conductivity was: a ripp i '
  • the conductivity of a flat BLSG and TLSG was 1 .74 mS and 2.2 mS, respectively.
  • the slope of the fit in the graph of FIG. 3B was 0.772 mS.
  • the relatively large error bars for o r i PP of rippled BLSG also reveal the randomness in conformity of BLSG, whereas the smaller error bars in conductivity of rippled TLSG showed the uniformity of the conformed graphene sheets.
  • FIG. 4 shows the location of the G peak, G
  • 0C for flat TLSG has been included in the figure. It can be seen from FIG. 4 that the G peak for rippled TLSGs had red shifted but there is a significant shift for sinusoidal substrates with periodicity of 1000 nm.
  • FIG. 5 shows the correlation between the G peak shift and the
  • FIG. 6 is a graph depicting the amount of strain in rippled TLSG that was calculated assuming a 14.2 cm "1 red shift for every percent strain.
  • p ripp is the reciprocal of o r i PP .
  • the figure shows direct correlation between the amount of strain and the change in the caluclated resistivity.
  • Corrugated substrate and conductive structures can be fabricated with dimensions that produce a variety of functions.
  • One illustration is the application of corrugated/rippled structures in a 1 D and 2D microstrip patch antenna. This feature allows for miniaturization as well as dual band application of microstrip patch antenna.
  • FIG. 2A depicts schematically a one dimensional patch antenna that was fabricated and tested using an electromagnetic simulator software called HFSS.
  • HFSS electromagnetic simulator software
  • a layer 30 of one or more graphene sheets is applied to the patch surface of substrate 28 which is sinusoidally rippled or corrugated.
  • the dimension d is the depth of the antenna, i.e., vertical distance from trough to crest, and ⁇ is the peak to peak distance or the substrate periodicity.
  • the patch antenna design 36 shown in FIG. 8 has a square
  • substrate 28 with equal length and width dimensions and a uniformly periodic sinusoidal surface 30 that includes a layer of conformed graphene 32 over an oxide 34 as shown in FIG. 2B and FIG. 2C.
  • the substrate is mounted or positioned adjacent to a ground plane 38 and a port 40 is electrically coupled to the conductive graphene layer 32.
  • the silicon substrate with an oxide and conformed graphene surface 30 is mounted or positioned adjacent to a ground plane 42.
  • Port 44 and port 46 are electrically coupled to the conductive graphene layer 32 of the corrugated surface 30.
  • the structure will have two different resonance frequency modes, i.e. a dual mode microstrip patch. With the miniaturization effect, this can be done without compromising the antenna footprint on the board chip.
  • the structure can be rippled in both dimensions with different periodicities to achieve two different resonant frequencies. Accordingly, devices with additional modes can also be fabricated.
  • the dimensions and sinusoidal silicon oxide substrates of various periodicities can be specifically tailored to provide patch antennas with different predictable capabilities.
  • b 2 xRe(n eff )x period .
  • present disclosure encompasses multiple embodiments which include, but are not limited to, the following:
  • a method for fabricating patterned graphene sheets comprising: (a) producing one or more graphene sheets; (b) fabricating a substrate with a patterned oxide surface; (c) applying the graphene sheets to the patterned oxide surface to form a layer of graphene; and (d) conforming the layer of applied graphene sheets to the surface pattern of the oxide surface.
  • fabricating a substrate comprises: thermally oxidizing a surface of a silicon base to form an oxidized silicon base; patterning the oxidized base with photolithography; forming the pattern in the silicon base; clearing the surface oxidization from the patterned silicon base; growing a first oxide mask on the cleaned patterned silicon base; removing the first oxide mask from the patterned silicon base; and growing a second oxide mask on the patterned silicon base to produce a final silicon substrate with a patterned oxide surface.
  • the forming the pattern in the silicon base comprises: dry etching the oxidized base to expose the silicon base in the form of the pattern; anistropically etching the exposed silicon pattern to etch the pattern into the silicon base; and removing remaining oxide from the surface of the oxidized base.
  • identifying a graphene sheet morphology comprises: selecting a corrugated sheet morphology; and selecting an orientation, wavelength and amplitude of the graphene sheet corrugations.
  • selecting the orientation, wavelength and amplitude of the graphene sheet corrugations is made to provide a characteristic strain on a graphene sheet layer.
  • the pattern of the patterned oxide surface comprises a non-periodic sinusoidal oxide surface pattern.
  • a method for fabricating a microstrip patch antenna comprising: (a) fabricating a silicon substrate with a periodic sinusoidal patterned oxide surface; (b) conforming at least one layer of a conductor to the surface pattern of the patterned oxide surface of the silicon substrate; (c) positioning the silicon substrate adjacent to a ground plane; and (d) coupling the conductive layer to a port.
  • the conductor layer is a conductor selected from the group of conductors consisting of a metal, graphene and a conductive polymer.
  • the method comprising: (a) thermally oxidizing a surface of a silicon base to form an oxidized silicon base; (b) patterning the oxidized base with photolithography; (c) forming the pattern in the silicon base; (d) clearing the surface oxidization from the patterned silicon base; (e) growing a first oxide mask on the cleaned patterned silicon base; (f) removing the first oxide mask from the patterned silicon base; and (g) growing a second oxide mask on the patterned silicon base to produce a final silicon substrate with a patterned oxide surface.
  • the forming the pattern in the silicon base comprises: dry etching the oxidized base to expose the silicon base in the form of the pattern; anistropically etching the exposed silicon pattern to etch the pattern into the silicon base; and removing remaining oxide from the surface of the oxidized base.
  • An apparatus comprising: (a) a silicon substrate with a patterned silicon dioxide surface; and (b) a layer of graphene disposed on the silicon dioxide surface of the silicon substrate conforming to the silicon dioxide pattern.
  • pattern comprises a non-periodic nanoscale sinusoidal pattern.
  • pattern comprises parallel trenches equally spaced apart.
  • pattern of parallel trenches comprises trenches with a "V" shaped cross- section.
  • a microstrip patch antenna apparatus comprising: (a) at least one patch of one or more layers of a conductor conformed to a sinusoidal patterned oxide surface of a silicon substrate; (b) a ground plane adjacent to the silicon substrate; and (c) a port coupled to the conductor.
  • conductor layer is a conductor selected from the group of conductors consisting of a metal, graphene, and a conductive polymer.
  • patterned oxide surface comprises a periodic sinusoidal oxide surface pattern.
  • patterned oxide surface comprises a non-periodic sinusoidal oxide surface pattern.
  • the substrate is a component of a microstrip patch antenna.
  • the substrate is a component of a two port microstrip patch antenna designed to excite both TM 10 and TM 0 i modes.
  • the substrate is a component of a rippled graphene stack.
  • a method of fabricating a silicon dioxide substrate comprising patterning a silicon substrate into a sinusoidal SiO 2 substrate.

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Abstract

La présente invention concerne un procédé de fabrication de substrats d'oxyde à motifs nanométriques et des dispositifs intégrant les substrats. Des motifs sinusoïdaux hautement périodiques ou non périodiques et d'autres motifs fins d'oxyde sont formés sur la surface d'une base appropriée telle qu'une base en silicium. De fins motifs d'oxyde en surface sont créés par photolithographie, gravure et trois événements de formation d'oxyde différents. De fines couches de matériaux conducteurs comportant du graphène et des métaux peuvent être appliquées sur les motifs d'oxyde en surface du substrat et être conformes au motif autorisant d'ajuster la morphologie et les propriétés physiques de la couche conductrice. Un contrôle des caractéristiques du dispositif est démontré en faisant varier les dimensions, la tension, l'orientation, la longueur d'onde et l'amplitude des ondulations de la feuille de graphène. Un dispositif d'antenne à plaques avec une feuille de graphène sinusoïdal périodique sur un substrat d'oxyde de silicium monté sur une plaque de base a été décrit.
PCT/US2015/062039 2014-11-22 2015-11-21 Dispositif et procédés de fabrication de substrats de dioxyde de silicium ayant un motif sinusoïdal WO2016081929A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106980189A (zh) * 2017-06-02 2017-07-25 电子科技大学 基于条形光波导的石墨烯微带线行波吸收型光调制器
CN109786986A (zh) * 2019-03-21 2019-05-21 四川轻化工大学 一种多层微带整流天线

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10505334B2 (en) * 2017-04-03 2019-12-10 Massachusetts Institute Of Technology Apparatus and methods for generating and enhancing Smith-Purcell radiation
JP6913622B2 (ja) * 2017-12-19 2021-08-04 京セラ株式会社 Ｒｆｉｄタグ用基板、ｒｆｉｄタグおよびｒｆｉｄシステム
DE102018214302B4 (de) * 2018-08-23 2020-07-30 Infineon Technologies Ag Verfahren zum Herstellen eines graphenbasierten Sensors
US11329384B2 (en) * 2020-01-21 2022-05-10 Embry-Riddle Aeronautical University, Inc. Z-axis meandering patch antenna and fabrication thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030025475A (ko) * 2001-09-21 2003-03-29 한국쌍신전기주식회사 마이크로스트립 패치 안테나
US20050023569A1 (en) * 2003-08-01 2005-02-03 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor (FET) device having corrugated structure and method for fabrication thereof
US20120248401A1 (en) * 2011-03-31 2012-10-04 Samsung Electronics Co., Ltd. 3-dimensional graphene structure and process for preparing and transferring the same
US20130199916A1 (en) * 2012-02-08 2013-08-08 Empire Technology Development Llc Elongational structures

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030025475A (ko) * 2001-09-21 2003-03-29 한국쌍신전기주식회사 마이크로스트립 패치 안테나
US20050023569A1 (en) * 2003-08-01 2005-02-03 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor (FET) device having corrugated structure and method for fabrication thereof
US20120248401A1 (en) * 2011-03-31 2012-10-04 Samsung Electronics Co., Ltd. 3-dimensional graphene structure and process for preparing and transferring the same
US20130199916A1 (en) * 2012-02-08 2013-08-08 Empire Technology Development Llc Elongational structures

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ANTOINE RESERBAT-PLANTEY ET AL.: "Strain Superlattices and Macroscale Suspension of Graphene Induced by Corrugated Substrates.", NANO LETTERS., 4 August 2014 (2014-08-04), pages 5044 - 5051 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106980189A (zh) * 2017-06-02 2017-07-25 电子科技大学 基于条形光波导的石墨烯微带线行波吸收型光调制器
CN106980189B (zh) * 2017-06-02 2019-07-16 电子科技大学 基于条形光波导的石墨烯微带线行波吸收型光调制器
CN109786986A (zh) * 2019-03-21 2019-05-21 四川轻化工大学 一种多层微带整流天线

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