WO2016074299A1 - 基于vcsel的高功率半导体激光器及其光学汇聚方法 - Google Patents

基于vcsel的高功率半导体激光器及其光学汇聚方法 Download PDF

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WO2016074299A1
WO2016074299A1 PCT/CN2014/093208 CN2014093208W WO2016074299A1 WO 2016074299 A1 WO2016074299 A1 WO 2016074299A1 CN 2014093208 W CN2014093208 W CN 2014093208W WO 2016074299 A1 WO2016074299 A1 WO 2016074299A1
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vcsel
light
transmission device
optical transmission
array
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PCT/CN2014/093208
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English (en)
French (fr)
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李德龙
李阳
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李德龙
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Priority claimed from CN201410643574.0A external-priority patent/CN104319629A/zh
Priority claimed from CN201410645371.5A external-priority patent/CN104332822A/zh
Priority claimed from CN201420680059.5U external-priority patent/CN204290033U/zh
Priority claimed from CN201420681460.0U external-priority patent/CN204290035U/zh
Application filed by 李德龙 filed Critical 李德龙
Priority to US15/525,592 priority Critical patent/US10199801B2/en
Priority to EP14905924.8A priority patent/EP3220494A4/en
Publication of WO2016074299A1 publication Critical patent/WO2016074299A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H01S5/426—Vertically stacked cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms

Definitions

  • the present invention relates to a high power semiconductor laser using a vertical cavity surface emitting laser (VCSEL) as a light source, and to an optical convergence method used in the high power semiconductor laser, and belongs to the technical field of semiconductor lasers.
  • VCSEL vertical cavity surface emitting laser
  • edge-emitting semiconductor lasers based on GaAs materials have always dominated and are widely used in industrial, medical, scientific research and other fields.
  • the edge-emitting semiconductor laser has its fatal flaws. Although its life expectancy is as long as tens of thousands of hours, in the pulse state, the optical catastrophic damage is extremely likely to have a serious impact on the life, so its actual service life is far from Achieve the desired life expectancy. Therefore, there is a need to provide a new semiconductor laser that can be used in the industrial field.
  • lasers can be classified into vertical cavity surface emitting lasers (VCSELs) and edge emitting lasers (Edge Emitting Laser Diodes) according to the relationship between the direction of illumination and the plane of the epitaxial wafer where the laser chip is located.
  • the vertical cavity surface emitting laser has a light emitting direction perpendicular to the epitaxial wafer direction, and is emitted from the top surface of the reaction region, and the emitting direction of the edge emitting semiconductor laser is parallel to the epitaxial wafer direction and is emitted from the edge of the reaction region.
  • the structure of a vertical cavity surface emitting laser (VCSEL) and an edge emitting semiconductor laser can be seen in the schematic diagram shown in FIG.
  • the edge-emitting semiconductor laser and the VCSEL respectively have the following characteristics: the edge-emitting semiconductor laser is a linear light source, and the divergence angles in the vertical direction and the horizontal direction are greatly different (the full-angle in the vertical direction is about 60 to 70 degrees, and the full-angle in the horizontal direction is about 7). ⁇ 10 degrees or so, and its far-field light intensity exhibits a Gaussian distribution; and as shown in Figure 2, the VCSEL is a circular light source with a small divergence angle (the full angle of the divergence angle is about 15-20 degrees), and its far field The light intensity is approximately flat top and the energy is uniform.
  • VCSELs have other advantages over edge-emitting semiconductor lasers, for example: higher The operating temperature, long life expectancy and low failure rate, and can be packaged similarly to the LED process, the packaging process requirements are low.
  • conventional VCSELs have not received attention in the high power market due to relatively low electro-optic efficiency and poor optical brightness.
  • VCSEL has gradually realized high power output close to the edge-emitting semiconductor laser, and due to its unique structure, its application has many advantages, such as high reliability, high temperature resistance, uniform optical distribution, and surface. High reflectivity and more. If the VCSEL can be improved to gradually use it in some industrial applications, it will bring a new revolution in the field of semiconductor lasers.
  • *FIT rate is the number of failures per 1 billion device hours of operation
  • the primary technical problem to be solved by the present invention is to provide a high power semiconductor laser based on VCSEL, which can be applied to the fields of laser medical and industrial laser processing.
  • Another technical problem to be solved by the present invention is to provide an optical convergence method for a VCSEL laser.
  • a VCSEL-based high power semiconductor laser including a VCSEL laser module, wherein the VCSEL laser module includes a VCSEL chip array composed of a plurality of VCSEL chips and is disposed in the VCSEL chip array.
  • An inner wall reflective optical transmission device in front of the light exiting surface; the light output of the VCSEL chip array is secondarily reflected by the reflected light reflected by the target and the inner wall reflective optical transmission device.
  • a plurality of VCSEL chips can be closely arranged in one plane, and the light emitting surface thereof forms a planar light emitting surface; or, the plurality of VCSEL chips can also be arranged at an angle to each other, and the plurality of VCSELs are arranged.
  • the light-emitting surface of the chip constitutes an approximately curved circumscribed polygon light-emitting surface centered on the object.
  • a VCSEL-based high power semiconductor laser including a VCSEL laser package structure including a VCSEL array composed of a plurality of VCSEL chips and an arc for packaging the VCSEL array is provided a heat sink, the cross section of the enveloping surface of the arcuate heat sink is a circular partial circumscribed polygon, and the encapsulation surface is composed of a plurality of small package planes at an angle to each other, the encapsulation surface is concave, and The center normal of each small package plane intersects at the center of the circle;
  • All of the VCSEL chips in the VCSEL array are mounted on respective small package planes of the heat sink such that all VCSEL chips are distributed on the outer circumference of the same circle, and the center normals of all VCSEL chips intersect at the center of the circle Focusing is formed, and the distance from the VCSEL chip to the focus constitutes a focal length.
  • the present invention also provides an optical convergence method for a VCSEL laser, comprising the steps of: distributing all VCSEL chips in a VCSEL array or their orthographic projections on the outer circumference of the same circle, and making the center method of all VCSEL chips The lines intersect at a center of the circle to form a focus; the distance from the VCSEL chip to the focus constitutes a focal length.
  • the VCSEL array can be passed through a heat sink having a concave package surface
  • the column is packaged, and the package surface of the heat sink is composed of a plurality of small package planes which are at an angle to each other, the section of the package surface is a partial circumscribed polygon of a circle centered on the focus, and each small package The center normal of the plane intersects at the center of the circle.
  • the VCSEL laser module uses an inner wall reflective optical transmission device to efficiently transmit the emitted light of the VCSEL chip array to illuminate the target object, and reflects the target object through the inner wall reflective optical transmission device.
  • the light is reflected to the light-emitting surface of the VCSEL chip array, and the light output of the VCSEL chip array is reflected twice by the reflected light reflected by the target and the inner-wall reflective optical transmission device. Since the surface of the VCSEL chip array has a very high reflectivity, especially in the area occupied by the VCSEL chip, the reflectance is as high as 99.5% or more, so the surface of the VCSEL chip array can efficiently reflect the reflected light of the object back. The secondary utilization has fully improved the utilization rate of the laser.
  • the VCSEL laser module can greatly improve the laser emission efficiency and the absorption rate of the target, and the optical power density of the exit port can be further improved by effectively concentrating the emitted light by using the tapered inner wall reflective optical transmission device.
  • the above VCSEL laser module In combination with VCSEL itself, it has a long service life, and it exhibits high reliability under pulse conditions. It is of great practical significance to apply the above VCSEL laser module to high-power semiconductor lasers.
  • the high-power semiconductor laser including the above VCSEL laser module provided by the invention has broad application prospects in the fields of laser medical treatment and industrial laser processing.
  • the package structure of the high power semiconductor laser provided by the present invention realizes the convergence of the VCSEL laser by changing the arrangement shape of the VCSEL chip array.
  • the VCSEL array is encapsulated by a concave arc-shaped heat sink, so that the laser reaches the beam convergence near the center of the circle.
  • further compression of the beam is achieved by providing transmissive optics in front of the VCSEL array.
  • the package structure of the VCSEL array changes the arrangement shape of the VCSEL chip array in a very simple manner, realizes beam convergence of a plurality of VCSEL chips at specific positions, and has broad application prospects in the fields of laser medical and industrial laser processing.
  • 1 is a schematic structural view of a vertical cavity surface emitting laser and an edge emitting laser
  • FIG. 2 is a schematic view showing a light emitting direction of a vertical cavity surface emitting laser array
  • FIG. 3 is a schematic diagram of a package structure of a single VCSEL chip in the prior art
  • FIG. 4 is a schematic structural diagram of a first VCSEL laser module provided in an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of a first arrangement of a plurality of VCSEL chips in a VCSEL chip array
  • FIG. 6 is a schematic diagram of a second arrangement of a plurality of VCSEL chips in a VCSEL chip array
  • FIG. 7 is a schematic structural diagram of a second VCSEL laser module provided in an embodiment of the present invention.
  • FIG. 8 is a schematic diagram of a convergence principle of a second VCSEL laser module provided in an embodiment of the present invention.
  • Figure 9 is a front elevational view of a curved heat sink provided in an embodiment of the present invention.
  • Figure 10 is a perspective view showing the structure of the arc-shaped heat sink shown in Figure 9;
  • FIG. 11 is a schematic diagram of a package structure of a VCSEL array based on the arc-shaped heat sink shown in FIG. 10;
  • FIG. 12 is a schematic diagram showing a convergence principle of a package structure of the VCSEL chip array shown in FIG. 11;
  • Figure 13 is a schematic diagram of a package structure of a VCSEL laser based on a curved heat sink and a light guide cone.
  • the high power semiconductor laser provided by the present invention includes any VCSEL laser module as shown in FIG. 4 or as shown in FIG.
  • the VCSEL laser module includes a VCSEL chip array 1 composed of a plurality of VCSEL chips and an inner wall reflection type optical transmission device 2 disposed in front of the light emitting surface of the VCSEL chip array 1.
  • the laser ablation of the target 3 by the VCSEL laser module is achieved by placing the VCSEL chip array 1 and the inner wall reflective optical transmission device 2 in front of the target 3 and then turning on the VCSEL laser.
  • the inner wall reflective optical transmission device 2 can efficiently transmit the emitted light of the VCSEL chip array 1 to be concentratedly irradiated on the target 3; and the inner wall reflective optical transmission device 2 can be reflected back from the target 3 The light is reflected on the light-emitting surface of the VCSEL chip array 1, and the light emitted from the VCSEL chip array 1 is subjected to efficient secondary reflection of the reflected light reflected by the object 3 and the inner-wall reflective optical transmission device 2.
  • a single VCSEL laser chip 10 is directly soldered to the heat dissipation substrate.
  • a plurality of VCSEL chips 10 are closely arranged to form a larger planar light-emitting surface; a plurality of VCSEL chips 10 are soldered by a gold wire 11 and a cathode 12 and an anode 13 are connected outside the entire light-emitting surface.
  • the nature of the VCSEL itself determines that this illuminating surface has a very high reflectivity for the laser, especially in the area occupied by the VCSEL chip 10, the reflectivity is as high as 99.5% or more.
  • the VCSEL chip 10 can be reduced to an extremely small extent by being more closely arranged. Therefore, the light-emitting surface of the VCSEL chip 10 has a high secondary utilization for reflected light reflected to its surface.
  • a plurality of VCSEL chips 10 can be closely arranged in one plane, so that the light-emitting surfaces are closely arranged to form a planar light-emitting surface, or a plurality of VCSEL chips 10 can be mutually formed. Arranged at an angle such that the light exiting surface forms an approximately curved polygonal light exiting surface centered on the target object 3.
  • a plurality of VCSEL chips are arranged at equal distances and equiangular angles with the target object 3 as a center, and the structure of the approximately arc-shaped polygonal light-emitting surface of the VCSEL chip array 1 is schematically arranged.
  • the inner wall reflective optical transmission device 2 can select a light guiding cone (which can be a parallel light cone or a ladder-shaped light cone, etc.) based on total reflection of the inner wall, and realize the transmission and convergence of the laser from the light emitting area of the chip to the target 3 by means of total reflection of the inner wall. .
  • the optical antireflection film can be vapor-deposited separately at the entrance and the exit of the light guiding cone.
  • the inner wall reflective optical transmission device 2 can also select a mirror barrel polished by the inner wall, and realize the transmission and convergence of the laser from the light emitting area of the chip to the target object 3 by means of specular reflection of the inner wall.
  • the inner wall reflective optical transmission device 2 is optimally reflected by the parallel inner wall or forms an opening angle of the exit opening larger than the entrance opening, which is also advantageous for sufficient ejection of the laser light.
  • the opening angle is preferably less than 15 degrees. If it is necessary to increase the optical power density at the output port position, it is also possible to make a small angle contraction from the entrance port to the exit port, but it should be noted that for the plane illuminating surface, the larger the contraction angle, the greater the influence on the exit efficiency. Further, if an inner wall reflection type optical transmission device 2 having an exit port area smaller than the area of the light-emitting area of the VCSEL chip 10 is selected, the optical power density of the surface of the object 3 can be improved to some extent.
  • any one of the above several designs may be selected, that is, the parallel inner wall reflection, the design of the exit port larger than the entrance port, or the design that the exit port is smaller than the entrance port may be selected.
  • the design that selects the exit opening smaller than the entrance opening is superior, so that the optical power density of the surface of the target 3 can be further improved.
  • the entrance opening of the inner wall reflective optical transmission device 2 completely covers and covers only the light-emitting area of the VCSEL chip array 1, and reduces the gap as much as possible and avoids covering the non-light-emitting area of the VCSEL chip.
  • the entrance opening of the inner wall reflective optical transmission device 2 may cover only the light exiting surface of the intermediate six VCSEL chips 10 (ie, the area within the dotted line frame in FIG. 5).
  • the entrance opening of the inner wall reflective optical transmission device 2 may cover only the light-emitting surface of the closely-arranged four VCSEL chips 10 (ie, the area inside the dotted line frame in FIG. 6) instead of The entire surface of the VCSEL chip array 1 as shown in FIGS. 5 and 6 is covered.
  • the VCSEL chip light-emitting region and the inner wall reflective optical transmission device 2 constitute a cavity having an extremely high reflectance on the inner wall which is open at one end of the object 3.
  • the laser light emitted by the VCSEL itself and the laser light reflected back from the target are in addition to a small amount of optical loss caused by slight internal absorption, crevice escape, and total reflection overflow (if a light guide cone is used).
  • Part of the light energy is output from the exit wall of the inner wall reflective optical transmission device 2 near the end of the target 3 and is sufficiently absorbed by the target 3.
  • the entrance of the inner wall reflective optical transmission device 2 closely covers the light-emitting area of the VCSEL chip 10, and the two should be as close as possible to avoid laser escape at the gap, and at the same time, for the non-light-emitting area of the VCSEL chip 10, It may be placed on the outside of the optics, so that the reflectance of the VCSEL exit surface greater than 99.5% can be fully utilized.
  • Inner wall reflective light The exit port of the transmission device is as close as possible to the surface of the target 3, and there is no mandatory distance requirement, but the closer the distance and the smaller the gap, the laser absorption efficiency of the target can be sufficiently improved.
  • edge-emitting lasers are often superimposed in the vertical direction to achieve a larger total power output.
  • a certain gap needs to be ensured between multiple edge-emitting lasers for packaging and heat dissipation.
  • This portion of the gap generally includes voids and heat conductors.
  • the surface of the VCSEL chip array has a very high reflectivity, especially in the area occupied by the VCSEL chip, the reflectivity is as high as 99.5% or more, and the VCSEL laser exhibits a more specific optical transmission device. Excellent characteristics.
  • the surface of the VCSEL chip array can efficiently re-use the reflected light of the target object, fully improving the utilization rate of the laser, and greatly improving the laser emission efficiency and the absorption rate of the target, and can further Increase the optical power density of the exit port.
  • the VCSEL laser module relies on the extremely high reflectivity of the surface of the VCSEL chip and the reflective optical transmission device of the inner wall to realize high-efficiency laser transmission and efficiently reflect the reflected light of the target object.
  • the secondary utilization has fully improved the utilization rate of the laser.
  • This structure can greatly improve the laser emission efficiency and the absorption rate of the target, and can effectively concentrate the light beam, further improving the optical power density of the exit port.
  • the VCSEL itself has a long service life and exhibits high reliability in a pulse state, it is of great practical significance to apply the above VCSEL laser module to the field of high power semiconductor lasers.
  • the high-power semiconductor laser including the above VCSEL laser module has a simple structure, low cost, and is convenient for application and implementation, and has broad application prospects in the fields of laser medical and industrial laser processing.
  • the package structure of the VCSEL is as shown in FIG. 3 and FIG. 4, usually a single VCSEL chip is directly soldered on the heat dissipation substrate, and the lower surface of the heat dissipation substrate is soldered on the heat sink, and the heat dissipation substrate has good heat conduction. Sex, and heat the VCSEL in time through the heat sink Go, to achieve cooling of the VCSEL in use.
  • a plurality of VCSELs form an array of planes as shown in FIG. 4.
  • a plurality of VCSEL chips By arranging a plurality of VCSEL chips closely on a horizontal heat sink to form a VCSEL array, a larger light-emitting surface can be formed, and a plurality of VCSEL chips are formed. Between the gold wire soldering. A plurality of VCSEL chips are closely arranged in a planar light-emitting surface package structure, as shown in FIGS. 5 and 6.
  • an optical convergence method for a VCSEL laser that achieves beam convergence of a plurality of VCSEL chips at specific locations by changing the arrangement shape of the VCSEL array.
  • all VCSEL chips 10 or their orthographic projections in the VCSEL array are distributed on the outer circumference of a portion of the same circle, and the center normals of all VCSEL chips 10 are intersected at the center of the circle.
  • the focus is on the beam convergence of the VCSEL chip illumination unit. Since the VCSEL chip is usually closely arranged in a certain area in the VCSEL array, the distribution pattern of the VCSEL chip is defined as a fan-shaped distribution, and the distance from the VCSEL chip 10 to the focus is defined as the focal length.
  • the VCSEL chip is a circular light source, the divergence angle is small (the full angle of the divergence angle is about 15 to 20 degrees), and the far-field light intensity is approximately flat top distribution, and the energy is uniform. Therefore, the power superposition of all VCSEL chips 10 at the center of the center can be achieved by changing the arrangement of the VCSEL chips so that different VCSEL chips 10 emit laser light at the same position. Compared to edge-emitting semiconductor lasers, the light emitted by the VCSEL array is easier to concentrate due to the smaller divergence angle of the laser beam emitted by the VCSEL, and its energy distribution is more uniform over the far-field target.
  • a heat sink 4 with an arc-shaped circumscribed polygon of the package surface as shown in FIG. 9 (due to the approximate arc of the package surface of the heat sink)
  • the shape abbreviated as an arc heat sink, encapsulates the VCSEL array 1 through the heat sink 4 having a concave package surface.
  • the package surface of the heat sink is shown in Figure 10, It consists of a plurality of small package planes 40 distributed at different heights and at an angle to each other.
  • the plurality of small package planes 40 form a circumscribed polygon of a circle whose center is the focus O, and the central method of each small package plane 40 The line intersects at the center of the circle O.
  • the specific structure and packaging of the VCSEL array will be described in detail in the examples below.
  • an optical transmission device 2 is further disposed in front of the VCSEL chip.
  • the inner wall of the optical transmission device 2 can totally reflect the light irradiated thereon.
  • the laser light emitted from the VCSEL array can be further compressed by using an optical transmission device 2 in which the cross section of the light incident surface is an arc shape or a circular arc circumscribed polygon.
  • the optical transmission device 2 is disposed in front of the light-emitting surface of the VCSEL array, the inner wall of the optical transmission device 2 is parallel to the radial direction R of the circle centered on the focal point and having a focal length, and the length of the optical transmission device 2 is less than the focal length length.
  • the optical transmission device 2 may be a mirror barrel polished with an inner wall or a light guide cone based on total reflection of the inner wall.
  • a polygonal heat sink having a cross section of the package surface circumscribed to the circular arc surface is provided for encapsulating the VCSEL laser array, thereby making the center of the arc surface Near the location, optical convergence of multiple VCSEL chips in one direction is achieved.
  • the cross section of the package surface of the curved heat sink 4 approximates a concave arc shape.
  • it is a polygon formed by a plurality of small package planes 40 having a certain angle to each other, and the polygon is a part of a circle having a focus of the VCSEL array (a convergence point where the object is located) and a circle having a focal length of radius R
  • the polygon is cut, wherein the central normal of each small package plane 40 converges to the focus (ie, the center O).
  • the convergence point may have a certain deviation, as long as the central normal of the small package plane 40 can be concentrated near the focus, but the range of the deviation should be limited to a very small angle.
  • the package structure of the VCSEL laser provided in the embodiment of the present invention encapsulates all of the VCSEL chips 10 in the VCSEL array 1 using the above-described curved heat sink 4. As shown in FIG. 11, all of the VCSEL chips 10 in the VCSEL array 1 are mounted on respective small package planes 40 of the arc-shaped heat sink 4, and one or more VCSEL chips may be packaged on each of the small package planes 40.
  • a portion is disposed on the outer circumference of a circle having a focal point O as the center of the circle and a focal length as a radius R, and the center normals of all the VCSEL chips intersect at a center of the circle to form a focus, and the distance from the VCSEL chip to the focus constitutes a focal length.
  • the package structure of the VCSEL laser is described above. As shown in FIG. 12, by encapsulating the VCSEL chip 10 on the small package plane 40 of the curved heat sink 4, the convergence of the VCSEL chip in the vicinity of the focal length (ie, the center of the circle O) can be achieved. Thus, the beams of all of the VCSEL illumination units can intersect at the center of the center of each VCSEL chip 10 at the center of the center to achieve a superposition of power.
  • the high power semiconductor laser provided in the embodiment of the present invention uses a curved heat sink in the package structure, and also uses a light incident surface as a circular arc surface or
  • the optical transmission device 2 of the circular face circumscribed polygon can realize the high-efficiency transmission of the laser through the optical transmission device 2, and has a certain beam compression effect on the laser to realize the beam convergence function.
  • the light incident surface of the optical transmission device 2 has a circular arc shape, and the center of the light incident surface is the same as the convergence point of the laser, so that the light incident surface and the VCSEL chip in the VCSEL array are emitted.
  • the surface is tangent, the center normal of the exit surface of the VCSEL chip is perpendicular to the light incident surface of the optical transmission device 2, and the laser light emitted by the VCSEL chip 10 can be directly injected into the optical transmission device 2, and the divergence angle of each VCSEL can be compressed. .
  • the inner wall of the optical transmission device 2 may be disposed parallel to a radial direction of a circle having a focal length as a center of the focal point, that is, the four side walls of the optical transmission device 2 may be parallel to the outermost side of the VCSEL array to the target
  • the radial direction between them is totally reflected by the inner walls of the upper and lower sides and the left and right sides of the optical transmission device 2, thereby realizing the convergence output at the end of the optical transmission device 2 near the center of the circle.
  • the light-incident surface of the optical transmission device 2 is larger than its light-emitting surface, and its light-emitting surface is disposed near the target, and the length of the optical transmission device 2 is smaller than the length of the focal length of the VCSEL array.
  • a mirror barrel polished by an inner wall or a light guide cone based on total reflection of an inner wall is generally selected as the optical transmission device 2.
  • the mirror barrel uses the specular reflection of the inner wall to realize the transmission and convergence of the laser from the light emitting area of the chip to the object 3.
  • the light guiding cone realizes the transmission and convergence of the laser from the light emitting area of the chip to the object 3 by means of total reflection of the inner wall.
  • the light incident surface and the light emitting surface of the light guiding cone may be respectively vapor-deposited with an optical antireflection film.
  • Conical mirror barrel or light guide cone by focusing the beam onto the output window on the smaller side Port, to achieve optical convergence.
  • all VCSEL chips should be closely arranged to minimize the gap between the VCSEL chips, which on the one hand reduces the volume of the package structure, on the other hand, can make full use of
  • the high reflectivity inherent to the VCSEL chip enables efficient secondary utilization of the reflected light reflected back by the VCSEL chip via the target and optical transmission device 2. Since the surface of the VCSEL chip array has a very high reflectivity, especially in the area occupied by the VCSEL chip, the reflectance is as high as 99.5% or more, so that the reflected light that is folded back by the target on the surface of the VCSEL chip array is highly efficient.
  • the secondary utilization has a non-negligible enhancement effect on the output power irradiated onto the target, and the utilization rate of the laser is sufficiently improved.
  • the VCSEL array can be reduced by completely covering the light-incident surface of the optical transmission device and covering only the light-emitting region of the VCSEL chip array. The effect of the illuminating area on the reflected light reduces the laser escape.
  • the cross section of the optical transmission device 2 may also be a circular arc circumscribed polygon (not shown), and the light incident surface may be composed of a plurality of facets that are at an angle to each other, and the center of the circle is concentric with the center of the heat sink. . Having each facet of the optical transmission device 2 corresponding to and parallel with a single small package plane 40 of the curved heat sink 4, the center normal of the VCSEL chip packaged on each small package plane can be perpendicular to its corresponding facet, thereby The laser light emitted from the VCSEL chip 10 can be directly incident into the inside of the optical transmission device 2, and the divergence angle of each VCSEL can be compressed. Moreover, the arrangement of such circular faceted polygons greatly reduces the distance between the VCSEL chip 10 and the optical transmission device 2, reducing laser escaping at the gap.
  • the package structure of the VCSEL laser is provided above.
  • the plurality of VCSEL chips can be totally reflected or specularly reflected by the light guide cone or the inner wall of the upper and lower sides and the left and right sides of the mirror barrel to realize the convergence output near one end of the center.
  • the position of the output port is best at the center of the circle or near the center of the circle.
  • the left and right sides thereof can gradually form an acute angle toward the center of the circle, thereby further compressing the light beam.
  • a single VCSEL chip when used to form a linear VCSEL array, it is packaged on a planar heat sink, and a ladder-shaped light guide cone or a mirror barrel is used to directly output a laser.
  • two sets of VCSEL chips are used to form an elongated VCSEL array, two sets of VCSEL chips can be packaged on a V-shaped heat sink, with a light guide cone or a conical mirror barrel, at the output port. The position achieves beam convergence.
  • the VCSEL laser is compressed in the longitudinal direction by the optical transmission device 2 to be concentrated at one point.
  • the heat sink of the packaged single VCSEL chip into a shape of a circumscribed polygon having a circular cross section.
  • its packaging for a single set of VCSEL chips is equivalent to the case where only one VCSEL chip is packaged on each small package plane, and therefore will not be described herein.
  • the present invention provides an optical convergence method of a VCSEL laser and a package structure thereof.
  • the VCSEL is encapsulated by a heat sink based on a curved polygon, and the beam convergence is achieved near the center of the circle.
  • the laser heat sink package surface is a circular circumscribed polygon, and the central normal direction of each package plane intersects near the center of the circle; each package plane can encapsulate one or more VCSEL chips.
  • heat sinks can be transport cooled or cooled with normal water channels.
  • heat sinks can be processed into water-passed cooling structures with microchannels to improve heat exchange efficiency.
  • the beam convergence of multiple VCSEL chips can realize the convergence of multiple VCSEL beams without relying on external lenses; it can also be combined with external optical devices (such as light guide cones, cone barrels, etc.) to achieve further Spot compression.
  • This package is simple and easy to implement.
  • the package structure of the above VCSEL laser constitutes a practically usable laser module, which has the following obvious advantages over the edge-emitting laser module based on a common parallel light cone or lens barrel: the laser module replaces the conventional one with VCSEL.
  • the side-emitting laser greatly improves the reliability of the laser; the laser module can work at 80 ° C or higher, and is more suitable for harsh ambient temperature; the laser module has higher convergence efficiency (because of the VCSEL divergence angle) Smaller, and concentrated to the center of the circle), the optical loss is small; the laser module is more evenly distributed at the optical exit position, approximately flat top distribution, rather than superimposed Gaussian distribution; the laser module is easier to implement than the edge-emitting laser module Higher power density.
  • this optical convergence method solves the defects of low reliability and high temperature resistance of the conventional edge-emitting semiconductor laser in the past several decades, and greatly improves the service life of the laser under pulse state.
  • the power superposition of the plurality of VCSEL illumination units is realized under the condition of ensuring high transmission efficiency, the power density of the optical outlet is greatly improved, and a relatively uniform optical energy distribution is ensured.
  • the package structure of this VCSEL laser has broad application prospects in the fields of laser medical and industrial laser processing.

Abstract

一种基于VCSEL的高功率半导体激光器，包括VCSEL激光器模组。其中，VCSEL激光器模组包括由多个VCSEL芯片（10）组成的VCSEL芯片阵列（1）和设置在VCSEL芯片阵列（1）的出光面前方的内壁反射型光学传输器件（2）；VCSEL芯片阵列（1）的出光面对经过目标物（3）和内壁反射型光学传输器件（2）反射回来的反射光线进行二次反射。同时提供了该高功率半导体激光器使用的一种封装结构，通过内凹的弧形热沉（4）对VCSEL阵列（1）进行封装，使得激光在圆心位置附近达到光束汇聚的目的。这种基于VCSEL的高功率半导体激光器，在激光医疗和工业激光加工领域具有广阔的应用前景。

Description

基于VCSEL的高功率半导体激光器及其光学汇聚方法 技术领域
本发明涉及一种使用垂直腔面发射激光器(VCSEL，Vertical Cavity Surface Emitting Laser)作为光源的高功率半导体激光器，同时涉及该高功率半导体激光器所使用的光学汇聚方法，属于半导体激光器技术领域。
背景技术
过去二十年间，在高功率半导体激光器领域，基于GaAs材料的边发射半导体激光器一直占据统治地位，并广泛应用于工业、医疗、科研等领域。然而，边发射半导体激光器却存在其致命的缺陷，虽然其预期寿命长达数万小时，但是在脉冲状态下，光学灾变性损坏几率极大，对寿命影响严重，所以，其实际使用寿命远不能达到理想的预期寿命。因此，需要提供一种新的可用于工业领域的半导体激光器。
在半导体激光器领域，根据发光方向与激光芯片所在外延片平面的关系，激光器可划分为垂直腔面发射激光器(Vertical Cavity Surface Emitting Laser，简称VCSEL)与边发射半导体激光器(Edge Emitting Laser Diode)两类。其中，垂直腔面发射激光器的发光方向垂直于外延片方向，从反应区的顶面射出，而边发射半导体激光器的发光方向平行于外延片方向，从反应区的边缘射出。垂直腔面发射激光器(VCSEL)与边发射半导体激光器的结构可参见图1所示的示意图。
边发射半导体激光器和VCSEL分别具有如下特点：边发射半导体激光器是线性光源，其在垂直方向和水平方向的发散角相差极大(垂直方向全角约在60～70度左右，水平方向全角约在7～10度左右)，并且其远场光强呈现高斯分布；而如图2所示，VCSEL是圆形光源，其发散角较小(发散角全角约为15～20度左右)，其远场光强近似平顶分布，能量均匀。因此，与边发射半导体激光器相比，VCSEL发射的光线更容易汇聚，并且在远场目标物上能量分布均匀。此外，与边发射半导体激光器相比，VCSEL还具有其他的优点，例如：具有较高 的工作温度，预期寿命较长且故障率低，并且可以采用类似于LED工艺进行封装，封装工艺要求低。然而，传统的VCSEL，由于相对较低的电光效率、较差的光学亮度，在高功率市场一直没有得到关注。
随着近年来技术的进步，VCSEL逐渐实现了接近于边发射半导体激光器的高功率输出，同时由于其独特的结构，其应用中存在诸多优点，如高可靠性、耐高温、光学分布均匀、表面高反射率等等。如果可以通过对VCSEL进行改进，使其可以逐步利用于部分工业应用领域，将会给半导体激光器领域带来一场全新的革命。
垂直腔面发射激光器(VCSEL)与边发射半导体激光器的具体性能对比请参见表1。
Figure PCTCN2014093208-appb-000001
注：*FIT率即每10亿个器件工作小时中所出现的故障数
表1边发射半导体激光器与VCSEL的结构性能对比
发明内容
本发明所要解决的首要技术问题在于提供一种基于VCSEL的高功率半导体激光器，可以应用于激光医疗和工业激光加工领域。
本发明所要解决的另一技术问题在于提供一种用于VCSEL激光器的光学汇聚方法。
为了实现上述发明目的，本发明采用下述技术方案：
在本发明的一个方面中，提供一种基于VCSEL的高功率半导体激光器，包括VCSEL激光器模组，其中，VCSEL激光器模组包括多个VCSEL芯片组成的VCSEL芯片阵列和设置在所述VCSEL芯片阵列的出光面前方的内壁反射型光学传输器件；所述VCSEL芯片阵列的出光面对经过目标物和所述内壁反射型光学传输器件反射回来的反射光线进行二次反射。
其中较优地，所述VCSEL芯片阵列中，多个VCSEL芯片可以在一个平面内紧密排列，其出光面组成一个平面出光面；或者，多个VCSEL芯片也可以相互成一定角度排列，多个VCSEL芯片的出光面构成一个以目标物为圆心的近似弧形的外切多边形出光面。
在本发明的另一个方面中，提供一种基于VCSEL的高功率半导体激光器，包括VCSEL激光器封装结构，所述VCSEL激光器封装结构包括由多个VCSEL芯片组成的VCSEL阵列和用于封装VCSEL阵列的弧形热沉，所述弧形热沉的封装面的截面是一个圆的部分外切多边形，所述封装面由多个相互呈一定角度的小封装平面组成，所述封装面内凹，并且，每个小封装平面的中心法线在圆心位置处相交；
所述VCSEL阵列中的所有VCSEL芯片分别安装于所述热沉的各个小封装平面上，从而使所有VCSEL芯片分布在同一圆的外圆周上，并且，所有VCSEL芯片的中心法线在圆心位置相交形成焦点，所述VCSEL芯片到焦点的距离构成焦距。
此外，本发明还提供了一种用于VCSEL激光器的光学汇聚方法，包括如下步骤：使VCSEL阵列中所有VCSEL芯片或其正投影分布于同一圆的外圆周上，并使所有VCSEL芯片的中心法线在圆心位置相交，构成焦点；所述VCSEL芯片到焦点的距离构成焦距。
其中较优地，可以通过一个具有内凹形封装面的热沉对VCSEL阵 列进行封装，所述热沉的封装面由多个相互呈一定角度的小封装平面组成，所述封装面的截面是一个以焦点为圆心的圆的部分外切多边形，并且，每个小封装平面的中心法线在圆心位置相交。
本发明提供的VCSEL激光器模组，采用内壁反射型光学传输器件对VCSEL芯片阵列的发射光线进行有效传输，使其照射在目标物上；并通过内壁反射型光学传输器件，将从目标物反射回来的光线反射至VCSEL芯片阵列的出光面，VCSEL芯片阵列的出光面对经过目标物和所述内壁反射型光学传输器件反射回来的反射光线进行二次反射。由于VCSEL芯片阵列的表面具有极高的反射率，尤其是在VCSEL芯片所占的面积上，反射率高达99.5％甚至以上，所以该VCSEL芯片阵列表面可以将目标物折回的反射光线进行高效的二次利用，充分提高了激光的利用率。
该VCSEL激光器模组可以大幅度提高激光的出射效率和目标物的吸收率，并且通过使用锥形的内壁反射型光学传输器件对出射光线进行有效汇聚，可以进一步提高出射口的光学功率密度。结合VCSEL本身具有较长的使用寿命，并且，其在脉冲状态下表现出高的可靠性，将上述VCSEL激光模组应用于高功率半导体激光器，具有极大的现实意义。本发明提供的包括上述VCSEL激光器模组的高功率半导体激光器在激光医疗和工业激光加工等领域具有广阔的应用前景。
此外，本发明提供的高功率半导体激光器的封装结构通过改变VCSEL芯片阵列的排列形状实现VCSEL激光的汇聚。具体在其封装结构中，通过内凹的弧形热沉对VCSEL阵列进行封装，使得激光在圆心位置附近达到光束汇聚的目的。并且，通过在VCSEL阵列前方设置透射性光学器件实现了光束的进一步压缩。这种VCSEL阵列的封装结构，用非常简洁的方式改变VCSEL芯片阵列的排列形状，实现了多个VCSEL芯片在特定位置的光束汇聚，在激光医疗和工业激光加工领域具有广阔的应用前景。
附图说明
图1是垂直腔面发射激光器和边发射激光器的结构示意图；
图2是垂直腔面发射激光器阵列的发光方向示意图；
图3是现有技术中单个VCSEL芯片的封装结构示意图；
图4是本发明的实施例中提供的第一种VCSEL激光器模组的结构示意图；
图5是VCSEL芯片阵列中，多个VCSEL芯片的第一种排列方式的示意图；
图6是VCSEL芯片阵列中，多个VCSEL芯片的第二种排列方式的示意图；
图7是本发明的实施例中提供的第二种VCSEL激光器模组的结构示意图；
图8是本发明的实施例中提供的第二种VCSEL激光器模组的汇聚原理示意图；
图9是本发明的实施例中提供的弧形热沉的正视示意图；
图10是图9所示弧形热沉的立体结构示意图；
图11是基于图10所示弧形热沉的VCSEL阵列的封装结构示意图；
图12是图11所示VCSEL芯片阵列的封装结构的汇聚原理示意图；
图13是基于弧形热沉和导光锥的VCSEL激光器的封装结构示意图。
具体实施方式
下面结合附图和具体实施例对本发明的技术内容进行详细描述。
本发明提供的高功率半导体激光器，包括如图4或者如图7所示的任意一种VCSEL激光器模组。该VCSEL激光器模组，包括多个VCSEL芯片组成的VCSEL芯片阵列1和设置在VCSEL芯片阵列1的出光面前方的内壁反射型光学传输器件2。通过将VCSEL芯片阵列1和内壁反射型光学传输器件2放置在目标物3的前方，然后开启VCSEL激光器，实现VCSEL激光器模组对目标物3的激光消融作用。其中，内壁反射型光学传输器件2可以对VCSEL芯片阵列1的发射光线进行有效传输，使其集中照射在目标物3上；并且，内壁反射型光学传输器件2，可以将从目标物3反射回来的光线反射至VCSEL芯片阵列1的出光面上，VCSEL芯片阵列1的出光面对经过目标物3和内壁反射型光学传输器件2反射回来的反射光线进行高效的二次反射。
具体来说，如图5和图6所示，在第一种VCSEL激光器模组的VCSEL芯片阵列1中，单个VCSEL激光器芯片10直接焊接于散热衬底上，形 成一个出光平面；多个VCSEL芯片10紧密排列，形成一个更大的平面出光面；多个VCSEL芯片10之间通过金丝11焊接，并在整个出光面外侧连接有阴极12和阳极13。VCSEL本身的性质决定了这个出光面对于激光具有极高的反射率，尤其是VCSEL芯片10所占的面积上，反射率高达99.5％甚至以上。对于反射率相对较低的间隙部分，通过VCSEL芯片10更为紧密的排列，可以使其减小到极小的程度。因此，VCSEL芯片10的出光面对于反射到其表面的反射光线具有较高的二次利用率。
结合图4至图7可知，在VCSEL芯片阵列1中，多个VCSEL芯片10可以在一个平面内紧密排列，从而使其出光面紧密排列成一个平面出光面，也可以多个VCSEL芯片10相互成一定角度排列，使其出光面构成一个以目标物3为圆心的近似弧形的多边形出光面。其中，在图7所示的第二种VCSEL激光器模组中，多个VCSEL芯片各自以目标物3为圆心，等距离、等角度排列，VCSEL芯片阵列1近似弧形的多边形出光面的结构示意图参见图7。当多个VCSEL芯片按照第二种方式排列成近似弧形的多边形出光面时，其光源能量直接进行汇聚，能量密度更高。为了具体体现多个VCSEL芯片按照第二种方式排列成近似弧形的多边形出光面时具有的光束直接汇聚的优点，在下文中，将会结合图7至图13对这种结构和封装方式进行详细描述。因此，在此先对激光器模组整体的结构及优点进行简单介绍。
内壁反射型光学传输器件2可以选用基于内壁全反射的导光锥(可以为平行光锥或梯台形光锥等)，利用内壁全反射方式实现激光从芯片发光区到目标物3的传输和汇聚。导光锥的折射率和透过率越高越好，导光锥的长度选择越短越好，但要注意导光锥角度的选择，用于避免多次全反射后因入射角度发生改变而溢出全反射角范围。为了提高导光锥的透光效率，导光锥的入射口和出射口可以分别蒸镀光学增透膜。
内壁反射型光学传输器件2还可以选用内壁抛光的反射镜筒，利用内壁镜面反射方式实现激光从芯片发光区到目标物3的传输和汇聚。反射镜筒的内壁反射率也是越高越好，角度的选择越小越好，长度的选择也越短越好。
内壁反射型光学传输器件2以平行的内壁反射最佳，或者形成出射口大于入射口的开口角度，也有利于激光的充分射出。其中，开口角度以小于15度为宜。如果需要提高输出口位置的光功率密度，还可以做从入射口到出射口的小角度收缩，但要注意对于平面出光面，收缩角度越大，则对出射效率影响越大。另外，如果选择一个出射口面积小于VCSEL芯片10发光区面积的内壁反射型光学传输器件2，则可以一定程度上提高目标物3表面的光学功率密度。需要说明的是，对于平面出光面，可以选择上述几种设计中的任意一种，即可以选择平行的内壁反射、出射口大于入射口的设计或者出射口小于入射口的设计。而对于近似弧形的多边形出光面，以选择出射口小于入射口的设计为优，从而可以进一步提高目标物3表面的光学功率密度。
以内壁反射型光学传输器件2靠近目标物3的一端为出射口，以内壁反射型光学传输器件2靠近VCSEL芯片阵列1的一端为入射口。内壁反射型光学传输器件2的入射口全覆盖且仅覆盖VCSEL芯片阵列1的发光区域，并尽可能减少缝隙以及避免覆盖VCSEL芯片的不发光区域。例如，在图5所示的VCSEL芯片阵列1的表面，内壁反射型光学传输器件2的入射口可以仅覆盖中间6块VCSEL芯片10的出光面(即图5中虚线框内的区域)，在图6所示的VCSEL芯片阵列1的表面，内壁反射型光学传输器件2的入射口可以仅覆盖紧密排列的4块VCSEL芯片10的出光面(即图6中虚线框内的区域)，而不是覆盖如图5和图6所示的VCSEL芯片阵列1的整个表面。
这样VCSEL芯片发光区和该内壁反射型光学传输器件2构成了一个在目标物3一端开口的、内壁具有极高反射率的腔体。在这个腔体中，VCSEL本身发出的激光，以及目标物反射回的激光，除因内部轻微吸收、缝隙逃逸以及全反射溢出(如果使用导光锥的话)造成的少量光学损失之外，绝大部分光能将从内壁反射型光学传输器件2靠近目标物3一端的出射口输出并被目标物3充分吸收。
实际使用中，内壁反射型光学传输器件2入射口紧密覆盖在VCSEL芯片10的发光区，二者应该尽可能接近，以避免缝隙处的激光逃逸，同时对于VCSEL芯片10的非发光区域，应尽可能置于光学器件的外侧，这样可以充分利用VCSEL出光面大于99.5％的反光率。内壁反射型光 学传输器件的出射口尽可能靠近目标物3表面，具体没有强制性距离要求，但越近的距离和越小的缝隙，能够充分提高目标物的激光吸收效率。
在大功率应用场合，一般边发射激光器往往在垂直方向依次叠加封装，实现较大的总功率输出。多个边发射激光器之间需要保证一定的间隙，以便于封装和散热。这部分间隙一般包括空隙和导热体。这些间隙和每个芯片，一起构成了整个激光器的出光面，该出光面对激光的反射率很低，往往吸收反射光，而不是将反射光反射回去。因此，在很多医疗与工业应用中，边发射激光器一般只适用于对目标物的一次性辐射，而对目标物折回的反射光的利用率很低。而在另一方面，由于VCSEL芯片阵列的表面具有极高的反射率，尤其是VCSEL芯片所占的面积上，反射率高达99.5％甚至以上，VCSEL激光器结合特定的光学传输器件表现出了更为优异的特性。该VCSEL模组中，VCSEL芯片阵列表面可以将目标物折回的反射光线进行高效的二次利用，充分提高了激光的利用率，可以大幅提高激光的出射效率和目标物的吸收率，并可以进一步提高出射口的光学功率密度。
综上所述，本发明提供的VCSEL激光模组依赖VCSEL芯片表面极高的反射率和内壁反射型光学传输器件，实现了高效率的激光传输，并对目标物折回的反射光进行了高效的二次利用，充分提高了激光的利用率。这种结构可以大幅提高激光的出射效率和目标物的吸收率，并可以有效汇聚光束，进一步提高出射口的光学功率密度。由于VCSEL本身具有较长的使用寿命，并且，其在脉冲状态下表现出高的可靠性，将上述VCSEL激光模组应用于高功率半导体激光器领域，具有极大的现实意义。这种包括上述VCSEL激光器模组的高功率半导体激光器，结构简单，成本低廉，便于应用实施，在激光医疗和工业激光加工等领域具有广阔的应用前景。
下面结合图7至图13对多个VCSEL芯片按照第二种方式排列成近似弧形的多边形出光面时的封装结构及其汇聚方法进行详细描述。
现有技术中，VCSEL的封装结构如图3和图4所示，通常将单个VCSEL芯片直接焊接于散热衬底上，散热衬底的下表面焊接在热沉上，散热衬底具有良好的导热性，并通过热沉将VCSEL的热量及时散发出 去，从而实现对使用中的VCSEL进行冷却。在实际使用时，多个VCSEL组成如图4所示的面阵列，通过将多个VCSEL芯片紧密排列在一块水平的热沉上组成VCSEL阵列，可以形成一个更大的出光面，多个VCSEL芯片之间通过金丝焊接。多个VCSEL芯片紧密排列成一个平面出光面的封装结构，可以参见图5和图6。
在医疗、工业等诸多高功率应用场合中，往往需要将多个激光器芯片输出的激光光束进行汇聚，以期在目标位置达到更高的功率密度。现有技术中，通过控制边发射激光器的芯片间距、光学准直、透镜聚焦，目前已经可以实现较小的光斑和极高的功率密度。而对于VCSEL，由于是面发光结构，芯片之间间距无法进一步压缩，光学准直亦比较困难，因此，应用于边发射半导体激光器阵列的光学汇聚方法并不适于对VCSEL阵列的光学汇聚。因而如何在特定位置对多个VCSEL芯片进行聚焦，是一个急需解决的问题。
在本发明的实施例中，提供一种用于VCSEL激光器的光学汇聚方法，通过改变VCSEL阵列的排列形状，实现多个VCSEL芯片在特定位置的光束汇聚。如图8所示，在该光学汇聚方法中，通过使VCSEL阵列中所有VCSEL芯片10或其正投影分布于同一圆的部分外圆周上，并使所有VCSEL芯片10的中心法线在圆心位置相交构成焦点，实现VCSEL芯片发光单元的光束汇聚。由于VCSEL阵列中，VCSEL芯片通常紧密排列在一定区域内，因此，定义VCSEL芯片的分布方式为扇形分布，并定义VCSEL芯片10到焦点的距离为焦距。
由于VCSEL芯片是圆形光源，发散角较小(发散角全角约为15～20度左右)，其远场光强近似平顶分布，能量均匀。因此，通过改变VCSEL芯片的排列方式，使不同VCSEL芯片10向同一位置发射激光，即可实现所有VCSEL芯片10在圆心位置的功率叠加。与边发射半导体激光器相比，由于VCSEL发射的激光束的发散角较小，VCSEL阵列发射的光线更易于实现汇聚，并且其在远场目标物上能量分布更加均匀。
为了实现VCSEL芯片的扇形分布，申请人经过试验研究，制作了一种如图9所示的封装面的截面呈圆弧状外切多边形的热沉4，(由于该热沉的封装面近似弧形，简称弧形热沉)，通过该具有内凹形封装面的热沉4对VCSEL阵列1进行封装。该热沉的封装面如图10所示，是 由多个分布在不同高度且相互呈一定角度的小封装平面40组成，多个小封装平面40组成一个以焦点为圆心O的圆的外切多边形，并且，每个小封装平面40的中心法线在圆心位置O相交。其具体结构以及对VCSEL阵列的封装方式将在下文实施例中详细介绍。
此外，为了进一步压缩VCSEL芯片的光束，同时限定激光的传播，在VCSEL芯片的前方还设置有光学传输器件2，较优地，光学传输器件2的内壁可以对照射到其上的光线进行全反射。通过使用一个入光面的截面为圆弧状或圆弧面外切多边形的光学传输器件2可以对VCSEL阵列射出的激光进行进一步压缩。其中，光学传输器件2设置在VCSEL阵列的出光面的前方，光学传输器件2的内壁平行于以焦点为圆心、以焦距为半径的圆的半径方向R，并且，光学传输器件2的长度小于焦距的长度。实际使用时，光学传输器件2可以采用内壁抛光的反射镜筒或者基于内壁全反射的导光锥。
下面，结合具体实施例对本发明提供的用于实现上述光学聚焦方法的VCSEL激光器的封装结构进行说明。
为了将多个VCSEL芯片的光束汇聚到一起，本发明的实施例中提供了一种封装面的截面外切于圆弧面的多边形热沉，用于封装VCSEL激光器阵列，从而使得在弧面圆心位置附近，实现了多个VCSEL芯片在一个方向上的光学汇聚。
如图9、图10和图11所示，弧形热沉4的封装面的截面近似于内凹的弧形。具体为由多个小封装平面40的截面彼此相互呈一定角度构成的多边形，该多边形是以VCSEL阵列的焦点(目标物所在的汇聚点)为圆心O、以焦距为半径R的圆的部分外切多边形，其中，每个小封装平面40的中心法线均汇聚于焦点(即圆心O)。实际使用中，其汇聚点可以有一定偏差，只要小封装平面40的中心法线可以汇聚于焦点附近即可，但偏差的范围应限制在一个极小的角度内。
本发明的实施例中提供的VCSEL激光器的封装结构，使用上述弧形热沉4对VCSEL阵列1中所有的VCSEL芯片10进行封装。如图11所示，分别将VCSEL阵列1中的所有VCSEL芯片10安装于弧形热沉4的各个小封装平面40上，并且，在每个小封装平面40上可以封装一个或多个VCSEL芯片10，这样可以使所有VCSEL芯片10的正投影全 部分布在以焦点为圆心O、以焦距为半径R的圆的外圆周上，并且，所有VCSEL芯片的中心法线在圆心位置相交形成焦点，VCSEL芯片到焦点的距离构成焦距。
上面对VCSEL激光器的封装结构进行了介绍。如图12所示，通过将VCSEL芯片10分别封装在弧形热沉4的小封装平面40上，即可实现VCSEL芯片在焦距(即圆心O)附近的汇聚。从而，所有VCSEL发光单元的光束，可以沿每个VCSEL芯片10的中心法线方向在圆心位置相交，实现功率的叠加。
为了对上述汇聚的光束进行进一步的光束压缩，本发明的实施例中提供的高功率半导体激光器在该封装结构中使用弧形热沉的同时，还使用了一种入光面为圆弧面或者圆弧面外切多边形的光学传输器件2，通过该光学传输器件2可以实现激光的高效传输，并对激光具有一定的光束压缩作用，实现光束汇聚功能。
如图13所示，该光学传输器件2的入光面的截面呈圆弧形，其入光面的圆心与激光器的汇聚点相同，从而使入光面与VCSEL阵列中的各个VCSEL芯片的出光面相切，VCSEL芯片出光面的中心法线垂直于光学传输器件2的入光面，VCSEL芯片10发射的激光可以直射入光学传输器件2的内部，并且，每个VCSEL的发散角都可以得到压缩。该光学传输器件2的内壁可以平行于以焦点为圆心、以焦距为半径的圆的半径方向设置，也就是说：该光学传输器件2的四个侧壁可以平行于VCSEL阵列最外侧到目标物之间的半径方向设置，通过光学传输器件2上下面及左右两侧面的内壁全反射，实现在光学传输器件2靠近圆心一端的汇聚输出。该光学传输器件2的入光面大于其出光面，并且其出光面设置在目标物附近，光学传输器件2的长度小于VCSEL阵列焦距的长度。
实际使用中，通常选取内壁抛光的反射镜筒或者基于内壁全反射的导光锥作为光学传输器件2。其中，反射镜筒利用内壁镜面反射方式实现激光从芯片发光区到目标物3的传输和汇聚。导光锥利用内壁全反射方式实现激光从芯片发光区到目标物3的传输和汇聚。为了提高导光锥的透光效率，导光锥的入光面和出光面可以分别蒸镀光学增透膜。锥形反射镜筒或导光锥，通过将光束会聚到较小一侧的输出窗 口，实现光学汇聚功能。
为了提高VCSEL阵列的输出功率密度，在VCSEL阵列中，所有VCSEL芯片应紧密排列，尽量减小VCSEL芯片之间的间隙，这在一方面减小了封装结构的体积，另一方面，可以充分利用VCSEL芯片固有的高反射率，实现VCSEL芯片对经由目标物和光学传输器件2反射回来的反射光线的高效的二次利用。由于VCSEL芯片阵列的表面具有极高的反射率，尤其是VCSEL芯片所占的面积上，反射率高达99.5％甚至以上，所以通过该VCSEL芯片阵列表面对目标物折回的反射光线进行高效的二次利用，对于照射到目标物上的输出功率具有不可忽视的增强作用，充分提高了激光的利用率。而在使用图13所示的光学传输器件2对VCSEL阵列的出光面进行耦合时，通过使光学传输器件的入光面全部覆盖且仅覆盖VCSEL芯片阵列的发光区域，可以减小VCSEL阵列中非发光区域对反射光线的影响，减小激光逃逸。
此外，光学传输器件2的截面还可以呈圆弧面外切多边形(未图示)，其入光面可以由多个互相呈一定角度的小平面组成，并且，其圆心与热沉的圆心同心。使光学传输器件2的每个小平面与弧形热沉4的单个小封装平面40对应且平行，可以使封装于各个小封装平面上的VCSEL芯片的中心法线与其对应的小平面垂直，从而，使得VCSEL芯片10发射的激光可以直射入光学传输器件2的内部，并且，每个VCSEL的发散角都可以得到压缩。此外，这种圆弧面外切多边形的设置极大地减小了VCSEL芯片10与光学传输器件2之间的距离，减少了缝隙处的激光逃逸。
上面提供了VCSEL激光器的封装结构，多个VCSEL芯片可以通过导光锥或反射镜筒的上下面及左右两侧面的内壁全反射或镜面反射，实现在靠近圆心一端的汇聚输出。输出口的位置，以圆心处或圆心附近最佳。另外，其左右侧面，可以向圆心处逐渐靠近形成锐角，进而进一步压缩光束。
此外，当采用单组VCSEL芯片构成线性VCSEL阵列时，将其封装在平面热沉上，配合梯台形导光锥或者反射镜筒，直接输出激光。当采用两组VCSEL芯片构成长条形的VCSEL阵列时，可以将两组VCSEL芯片封装在V字形热沉上，配合导光锥或者锥形反射镜筒，在输出口 位置实现光束汇聚。此时，应注意使用光学传输器件2对VCSEL激光器在长度方向上进行压缩，使其汇聚于一点。
当然，也可以直接将封装单组VCSEL芯片的热沉制作成截面呈圆的外切多边形的形状。此时，其对单组VCSEL芯片的封装，等同于在每个小封装平面上只封装一个VCSEL芯片时的情形，因此在此就不再赘述了。
综上所述，本发明提供了VCSEL激光器的光学汇聚方法及其封装结构。通过采用基于弧面多边形的热沉对VCSEL进行封装，进而在圆心位置附近达到光束汇聚的目的。激光器热沉封装面为一个圆的外切多边形，每个封装平面的中心法线方向在圆心位置附近相交；每个封装平面可以封装一个或多个VCSEL芯片。对于小功率应用，热沉可以采用传输制冷或者普通水通道冷却，对于高功率应用，热沉可以加工成带有微通道的通水冷却结构，以提高热交换效率。在不同的封装结构中，多个VCSEL芯片的光束汇聚可以不依赖外部透镜即可实现多个VCSEL光束的汇聚；也可以配合外部光学器件(如导光锥、锥形镜筒等)实现进一步的光斑压缩。这种封装方式简单、易于实施。
以上VCSEL激光器的封装结构，构成了一个实际可用的激光器模组，比起基于普通平行光锥或者镜筒的边发射激光器模组，具有以下明显的优势：该激光器模组使用VCSEL替代了传统的边发射激光器，大幅提高了激光器的可靠性；该激光器模组可以在80℃甚至更高温度下工作，更能适应恶劣的环境温度；该激光器模组具有更高的汇聚效率(因为VCSEL发散角更小，且向圆心汇聚)，光学损失小；该激光器模组在光学出口位置分布更为均匀，近似平顶分布，而非叠加的高斯分布；该激光器模组比边发射激光器模组更易实现更高的功率密度。因此，这种光学汇聚方法解决了传统边发射半导体激光器在过去几十年的可靠性低、不耐高温的缺点，大幅提高了激光器在脉冲状态下的使用寿命。同时通过具有汇聚作用的光学传导器件的引入，在保证高传输效率的情况下实现了多个VCSEL发光单元的功率叠加，大幅提高了光学出口的功率密度，并保证了相对均匀的光学能量分布。这种VCSEL激光器的封装结构，在激光医疗和工业激光加工领域具有广阔的应用前景。
以上对本发明所提供的基于VCSEL的高功率半导体激光器及其光学汇聚方法进行了详细的说明。对本领域的一般技术人员而言，在不背离本发明实质精神的前提下对它所做的任何显而易见的改动，都将构成对本发明专利权的侵犯，将承担相应的法律责任。

Claims (18)

  1. 一种基于VCSEL的高功率半导体激光器，其特征在于包括VCSEL激光器模组，所述VCSEL激光器模组包括多个VCSEL芯片组成的VCSEL芯片阵列和设置在所述VCSEL芯片阵列的出光面前方的内壁反射型光学传输器件；所述VCSEL芯片阵列的出光面对经过目标物和所述内壁反射型光学传输器件反射回来的反射光线进行二次反射。
  2. 如权利要求1所述的高功率半导体激光器，其特征在于：
    所述内壁反射型光学传输器件的出射口面积小于入射口面积。
  3. 如权利要求1或2所述的高功率半导体激光器，其特征在于：
    所述内壁反射型光学传输器件的入射口全部覆盖且仅覆盖所述VCSEL芯片阵列的发光区域。
  4. 如权利要求1或2所述的高功率半导体激光器，其特征在于：
    所述VCSEL芯片阵列中，多个VCSEL芯片在一个平面内紧密排列，其出光面组成一个平面出光面。
  5. 如权利要求1或2所述的高功率半导体激光器，其特征在于：
    所述VCSEL芯片阵列中，多个VCSEL芯片相互成一定角度排列，多个VCSEL芯片的出光面构成一个以目标物为圆心的近似弧形的外切多边形出光面。
  6. 如权利要求1或2所述的高功率半导体激光器，其特征在于：
    所述内壁反射型光学传输器件是内壁抛光的反射镜筒。
  7. 如权利要求1或2所述的高功率半导体激光器，其特征在于：
    所述内壁反射型光学传输器件是基于内壁全反射的导光锥。
  8. 如权利要求7所述的高功率半导体激光器，其特征在于：
    所述导光锥的入射口和出射口蒸镀光学增透膜。
  9. 一种基于VCSEL的高功率半导体激光器，其特征在于包括VCSEL激光器封装结构，所述VCSEL激光器封装结构包括由多个VCSEL芯片组成的VCSEL阵列和用于封装VCSEL阵列的弧形热沉，所述弧形热沉的封装面的截面是一个圆的部分外切多边形，所述封装面由多个相互呈一定角度的小封装平面组成，所述封装面内凹，并且，每个小封装平面的中心法线在圆心位置处相交；
    所述VCSEL阵列中的所有VCSEL芯片分别安装于所述热沉的各个小封装平面上，从而使所有VCSEL芯片分布在同一圆的外圆周上，并且，所有VCSEL芯片的中心法线在圆心位置相交形成焦点，所述VCSEL芯片到焦点的距离构成焦距。
  10. 如权利要求9所述的高功率半导体激光器，其特征在于：
    每个所述小封装平面用于封装一个或多个VCSEL芯片。
  11. 如权利要求9所述的高功率半导体激光器，其特征在于：
    所述VCSEL阵列前方设置有一个入光面的截面为圆弧状或圆弧面外切多边形的光学传输器件，所述光学传输器件的内壁平行于以焦点为圆心、以焦距为半径的圆的半径方向，所述光学传输器件的长度小于所述VCSEL阵列焦距的长度。
  12. 如权利要求11所述的高功率半导体激光器，其特征在于：
    所述光学传输器件是内壁抛光的反射镜筒或者基于内壁全反射的导光锥。
  13. 如权利要求12所述的高功率半导体激光器，其特征在于：
    所述导光锥的入光面和出光面蒸镀光学增透膜。
  14. 如权利要求9所述的高功率半导体激光器，其特征在于：
    所述VCSEL阵列中，各所述VCSEL芯片紧密排列；
    所述光学传输器件的入光面全部覆盖且仅覆盖所述VCSEL芯片阵列的发光区域。
  15. 一种用于VCSEL激光器的光学汇聚方法，其特征在于包括如下步骤：
    使VCSEL阵列中所有VCSEL芯片或其正投影分布于同一圆的外圆周上，并使所有VCSEL芯片的中心法线在圆心位置相交，构成焦点；所述VCSEL芯片到焦点的距离构成焦距。
  16. 如权利要求15所述的光学汇聚方法，其特征在于：
    通过一个具有内凹形封装面的热沉对VCSEL阵列进行封装，所述热沉的封装面由多个相互呈一定角度的小封装平面组成，所述封装面的截面是一个以焦点为圆心的圆的部分外切多边形，并且，每个小封装平面的中心法线在圆心位置相交。
  17. 如权利要求15所述的光学汇聚方法，其特征在于：
    使用一个入光面的截面为圆弧状或圆弧面外切多边形的光学传输器件对所述VCSEL阵列射出的激光进行汇聚，所述光学传输器件设置在所述VCSEL阵列的出光面的前方，所述光学传输器件的内壁平行于以焦点为圆心、以焦距为半径的圆的半径方向，所述光学传输器件的长度小于焦距的长度。
  18. 如权利要求17所述的光学汇聚方法，其特征在于：
    所述光学传输器件是内壁抛光的反射镜筒或者基于内壁全反射的导光锥。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107143756A (zh) * 2017-06-14 2017-09-08 杨毅 灯具

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9992477B2 (en) 2015-09-24 2018-06-05 Ouster, Inc. Optical system for collecting distance information within a field
US10840675B2 (en) * 2018-02-23 2020-11-17 Lumentum Operations Llc Emitter array that includes inhomogeneous emitter distribution to flatten a beam profile of the emitter array
WO2019201010A1 (zh) * 2018-04-16 2019-10-24 Oppo广东移动通信有限公司 激光投射器、相机模组和电子装置
KR20200005083A (ko) * 2018-07-05 2020-01-15 삼성전자주식회사 광센싱 시스템 및 이를 포함하는 전자 기기
CN114063306A (zh) * 2021-10-27 2022-02-18 中国科学院理化技术研究所 用于高功率激光的透反式多区滤波光阑装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020154421A1 (en) * 2001-04-23 2002-10-24 Willden Dee E. Lensless laser focusing device
CN2928026Y (zh) * 2006-01-24 2007-08-01 恩耐激光技术(上海)有限公司 便携式激光脱毛装置
CN101447647A (zh) * 2008-12-22 2009-06-03 中国科学院长春光学精密机械与物理研究所 垂直腔面发射激光器列阵的串接结构
CN203060609U (zh) * 2012-12-26 2013-07-17 北京瑞通科悦科技有限公司 具有皮肤冷却功能的半导体激光治疗装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001339460A (ja) 2000-05-26 2001-12-07 Matsushita Electric Ind Co Ltd デジタル送受信装置
US7965754B1 (en) * 2009-04-21 2011-06-21 The Boeing Company Spherical array laser source
CN201556835U (zh) 2009-11-07 2010-08-18 桂林电子科技大学 一种可将半导体激光器及其列阵光束对称化变换的导光管
DE102010042453A1 (de) * 2010-10-14 2012-04-19 Robert Bosch Gmbh Laserzündeinrichtung für eine Brennkraftmaschine und Betriebsverfahren hierfür
WO2013032954A1 (en) 2011-08-26 2013-03-07 Joseph John R High speed free-space optical communications
CN202602081U (zh) 2012-05-11 2012-12-12 中国工程物理研究院激光聚变研究中心 一种百千瓦级面阵ld阵列的耦合系统
CN103094826A (zh) * 2013-01-31 2013-05-08 中国工程物理研究院激光聚变研究中心 一种大口径二极管泵浦放大器的泵浦耦合系统
JP6097584B2 (ja) * 2013-02-04 2017-03-15 株式会社日本自動車部品総合研究所 レーザ発振装置とその製造方法
CN103412406B (zh) 2013-07-30 2015-12-09 中国科学院半导体研究所 一种用于激光显示的红光半导体面阵光源装置
CN204290035U (zh) 2014-11-10 2015-04-22 李德龙 基于vcsel的高功率半导体激光器及其vcsel激光器模组
CN204290033U (zh) 2014-11-10 2015-04-22 李德龙 用于实现光学汇聚的vcsel激光器封装结构

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020154421A1 (en) * 2001-04-23 2002-10-24 Willden Dee E. Lensless laser focusing device
CN2928026Y (zh) * 2006-01-24 2007-08-01 恩耐激光技术(上海)有限公司 便携式激光脱毛装置
CN101447647A (zh) * 2008-12-22 2009-06-03 中国科学院长春光学精密机械与物理研究所 垂直腔面发射激光器列阵的串接结构
CN203060609U (zh) * 2012-12-26 2013-07-17 北京瑞通科悦科技有限公司 具有皮肤冷却功能的半导体激光治疗装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3220494A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107143756A (zh) * 2017-06-14 2017-09-08 杨毅 灯具

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