WO2016059171A2

WO2016059171A2 - Optoelectronic assembly and method for producing an optoelectronic assembly

Info

Publication number: WO2016059171A2
Application number: PCT/EP2015/073916
Authority: WO
Inventors: Michael Popp; Simon SCHICKTANZ; Stefan Hartinger
Original assignee: Osram Oled Gmbh
Priority date: 2014-10-17
Filing date: 2015-10-15
Publication date: 2016-04-21
Also published as: DE102014115121B4; WO2016059171A3; DE102014115121A1

Abstract

An optoelectronic assembly (100, 130,140, 150, 160) is disclosed in various embodiments. Said optoelectronic assembly (100, 130, 140, 150, 160) has a first electrode (104), an organically functional layer structure (106), a second electrode (110) and an electrically conductive structure (108) having a positive temperature coefficient. The organic functional layer structure (106) is electrically coupled to the first electrode (104) and to the second electrode (110). The electrically conductive structure (108) is designed so it can be electrically coupled to the organic functional layer structure (106) such that at least one part of the electric current, which flows from the first electrode (104) through the organic functional layer structure (106) to the second electrode (110), flows through the electrically conductive structure (108).

Description

description

Optoelectronic assembly and method for manufacturing an optoelectronic assembly

The invention relates to an optoelectronic assembly and a method for producing an optoelectronic assembly. Organic-based optoelectronic components, so-called organic optoelectronic components, are finding widespread application. For example, organic optoelectronic components in the form of organic light-emitting diodes (OLEDs) are increasingly being used in general illumination, for example as organic surface light sources.

Illustrated in FIG. 8 is a conventional OLED 800 having on a carrier 802 an anode 804, a cathode 808 and therebetween an organically functional layer system 806.

The organic functional layer system 806 may include: one or more emitter layers in which electromagnetic radiation is generated, a charge carrier pair generation layer structure each of two or more charge generating layers (CGL)

Charge pair generation, as well as one or more Elektronenblockadeschichten, also referred to as

Hole transport layer (HTL), and one or more hole block layers, also referred to as electron transport layers (ETLs), to direct the flow of current.

In the bottom emitter OLED 800 in which the light is emitted through the carrier 802, the anode 804 is transparent, usually made of indium tin oxide (indium tin oxide - ITO), graphene, AZO, AlZnOx or nanowires. The limited sheet resistance of the transparent anode 802 leads to an uneven distribution of current and luminance over the luminous area, in particular in the case of large-area OLED components. The uneven current and

Luminance distribution leads to uneven heating of the component. The uneven heating enhances the uneven current and luminance distribution and / or leads to uneven aging of the OLED component over the luminous area. In other words: organic

Area light sources are subject to an aging process, which can manifest itself, for example, in a change in the light intensity or the voltage. The reason for this is essentially the aging of the layers of the organic functional layer system 806. This aging depends on the temperature: the higher the temperature, for example the ambient temperature or self-heating, the faster is the degradation of the organic materials and the faster the surface light source ages ,

A high efficiency of the OLED for efficient energy conversion is conventionally not always possible, for example due to requirements regarding the color location of the emitted light and specifications for sometimes very high ambient temperatures, for example 105 ° C.

Homogenization of the luminous area is currently achieved essentially by supporting conductive structures in the form of electrical busbars in the luminous area. A more uniform aging over the luminous area is to be achieved by the use of a heat distribution structure (heat spreader). Further, it is conventional to change the dimension of resistors to improve homogeneity and aging; and to reduce high ambient temperatures by active cooling, for example, using the Seebeck effect or the piezo effect, which is very costly. Using other light sources, such as point light sources, is not desirable for various designs. The anode 804 is separated from physical contact with the cathode 808 by means of electrical insulation 816 and the organic functional layer system 806. Further, a conventional OLED 800 further includes an encapsulation with a thin film encapsulant 810, an adhesive layer 812, and a cover 814 to prevent ingress of water into the organic functional layer system 806. The contacting of the organic optoelectronic component 800 is conventionally carried out by means of contact surfaces 820, in which the thin-film encapsulation 810 is opened. In the contact surfaces 820, the anode 804 and the cathode 808 or an electrically conductive layer 818 connected to the cathode 808 are exposed.

Conventional OLEDs 800 to be used as area light source are susceptible to 3-dimensional perturbations such as particles 822. Particularly susceptible in this regard are OLEDs 800 having a thin film encapsulant 810 with different layer sequences and a protective layer or cover 814 laminated thereon by adhesive layer 812 , such as glass. Due to the usual process management, these OLED components have an increased susceptibility to damage by particles 822, for example in the event that a mechanical pressure is exerted on the particle-loaded site. Particles 822 on the cathode 808 on the order of the thickness of the cathode 808 or the thickness of the thin-film encapsulation 812, for example with a thickness of 100 nm to 3 μm, may be due to the softness of the layer stack of cathode 808 and organically functional layer system 808 under pressure on the particle 822, are pushed through this layer stack. The particle 822 or this disturbance can be pressed through the organic functional layer system 808 to the opposite contact (anode 802). Thus, by mechanical pressure, the particle 822 may push the cathode 808 through the organic functional layer system 806 and thus form a physical contact 824 between the cathode 808 and the anode 804. This can result in a spontaneous failure of the OLED component due to the short circuit that forms. Thus, particles 822 in a conventional OLED 800 may cause electrical short circuit under mechanical stress. The OLEDs should therefore be made more robust for use as a surface light source in order to prevent or reduce the risk of short-circuiting by particles 822.

At the same time as the OLED 800 is becoming more robust, further specifications of the OLED 800 should not be adversely affected. Other specifications include, for example, the (to) IVLs (current-voltage, luminance-voltage characteristics) parameters; the efficiency, the voltage, the color of the emitted light, the lifetime, the storage stability and the mechanical robustness.

In a conventional method for increasing the robustness of an OLED 800, discretization of the luminous area and integration of fuse elements in the OLED are used. However, this requires a very high alignment accuracy, which requires a high investment in adjustment units at the beginning of production (FE). In addition, the discretization and the integrated security elements lead to a partial loss of area of the illuminated area. In another conventional method of increasing the robustness of an OLED 800, a glass lamination is used with a direct lamination of a glass cover 814 to the organic functional layer system 806. However, there is the increased risk of particles 822 being pushed into the organically functional layer system 806. A cavity glass encapsulation to circumvent this problem is not suitable for use in general lighting applications.

It is also known that PTC thermistors are used as external temperature protection, for example for the protection of motors. The object of the invention is to provide an optoelectronic assembly with which an uneven current and luminance distribution and / or uneven aging of the luminous area, for example by the influence of temperature, can be prevented or reduced. Alternatively or additionally, an optoelectronic assembly with an increased robustness with respect to particles should be provided.

The object is achieved according to one aspect of the invention by an optoelectronic assembly having a first electrode, an organic functional layer structure, a second electrode; and an electrically conductive structure having a positive temperature coefficient. The organically functional layer structure is formed electrically coupled to the first electrode and the second electrode. The electrically conductive structure is electrically coupled to the organic functional layer structure such that at least a portion of the electrical current flowing from the first electrode through the organic functional layer structure to the second electrode flows through the electrically conductive structure. Alternatively or additionally, at least a portion of an electrical current may flow from the second electrode through the organic functional layer structure to the first electrode and through the electrically conductive structure. In the event that a first current flows from the first electrode to the second electrode and a second current flows from the second electrode to the first electrode, the first current and the second current may flow with a time lag and / or different charge carriers.

The electrically conductive structure having a positive temperature coefficient is designed such, for example, from a cold conductive material and in the current path and dimension such that the electrically conductive structure has a first electrical resistance at a first temperature and has a second electrical resistance at a second temperature. The second temperature is greater than the first temperature. The second electrical resistance is greater than the first electrical resistance. In various developments, the material of the electrically conductive structure has a transition temperature between the first temperature and the second temperature. The transition temperature may also be referred to as the Curie temperature of the material of the electrically conductive structure. Below the transition temperature, for example at the first temperature, the first electrical resistor has a value in a range, so that the electrically conductive structure is referred to as electrically conductive or electrically semiconducting or is considered such. Above the transition temperature, for example at the second temperature, the second electrical resistance has a value in a range, so that the electrically conductive structure is referred to as electrically insulating, dielectric, electrically non-conductive or paraelectric or is considered such. The second electrical resistance can, for example, order a factor of 10000 greater than the first electrical resistance.

In various developments, as an alternative to the electrical resistance of the electrically conductive structure, the electrical conductivity can be considered, and vice versa.

In other words, the electrically conductive structure having a positive temperature coefficient can also be referred to as a PTC thermistor or PTC resistor (positive temperature coefficient PTC) or PTC thermistor. In other words, a cold conductive resistance layer (positive temperature coefficient - PTC) can be formed between the organically functional layer structure and the second electrode. With locally increasing temperature in the organically functional layer structure, the resistance also increases locally in the cold-conducting resistance layer and thus reduces the electrical current that flows through the cold-conducting resistance layer. As a result, the brightness of the emitted light is locally reduced in a light-emitting optoelectronic assembly. During operation of the optoelectronic assembly, homogenous current injection and, associated therewith, homogenization of the luminance distribution of the emitted light via the optically active surface and / or more uniform aging of the optoelectronic assembly can be achieved in the steady state, for example for large-area OLED components.

The electrically conductive structure may be, for example, a ferroelectric, for example a perovskite, for example a barium titanate; or comprise or be formed from a pyroelectric. The material of the electrically conductive structure having a positive temperature coefficient can also be referred to as a PTC resistor material. PTC thermistor materials for the electrically conductive structure can Have transition temperatures from about 50 ° C. The transition temperature is, for example, the temperature value of the material at which the transition from a ferroelectric property to a paraelectric property takes place, for example the transition from which the material has a sudden increase in the electrical resistance. The transition temperature of the electrically conductive structure may be lower than the glass transition temperature or the melting temperature of the materials of the organic functional layer structure. As a result, for example, a short circuit in the optically active surface of the optoelectronic assembly can be electrically isolated. At a transition temperature of about 60 ° C, a temperature of, for example, about 30 ° C to about 60 ° C may be set in the organic functional layer structure.

Furthermore, the robustness can be increased by means of the electrically conductive structure in the case of flexible substrates of the optoelectronic assembly.

Furthermore, the electrically conductive structure can be used to a pure sensor application. A change in the temperature may, for example, lead to a defined regulation of the optoelectronic assembly, for example to a switching off of the optoelectronic assembly. Another sensor application is, for example, a short-circuit detection, and if necessary, a mechanical elimination of the cause of the short circuit, for example by healing the defect by means of laser.

Furthermore, by using the electrically conductive structure in the form of an embedded hybrid PTC thermistor (as a functional ceramic, metal, semiconductor) in a

Surface light source cost-effective, a temperature-dependent resistor are installed, which reduces the current flow through the surface light source with increasing temperature. This can reduce the self-heating, for example, in a range of about 20 ° C to about 30 ° C; and the aging slows down.

According to a development, the electrically conductive structure is designed such that the electrically conductive structure is electrically conductive below a predetermined temperature and is electrically non-conductive above the predetermined temperature. In other words, above the predetermined temperature, the electrically conductive structure is dielectric and becomes electrically insulating with respect to the flow of current from the first electrode to the second electrode (and / or vice versa) through the electrically conductive structure. The electrically conductive structure is therefore not above the predetermined temperature, only to a small extent or only at a high electrical voltage via the electrically conductive structure electrically conductive. The electrically conductive structure with positive temperature coefficients can therefore also be referred to as a PTC thermistor, PTC resistor or PTC thermistor. The predetermined temperature may have a temperature in a range of about 50 ° C to about 150 ° C, for example, in a range of about 50 ° C to about 120 ° C, for example, in a range of about 50 ° C to about 100 ° C For example, in a range of about 50 ° C to about 80 ° C.

According to a further development, at least part of the electrically conductive structure and the organically functional layer structure are formed electrically in series with one another. As a result, the electrically conductive structure can interrupt the flow of current for at least part of the electrical current flowing through the organically functional layer structure or lead to a redirection of the current flow, for example, a change in the current intensity of a parallel current path.

According to a further development, the electrically conductive structure at least with the first electrode, the organically functional layer structure or the second electrode on a physical contact. It can thereby be achieved that an exact determination of the temperature in the organically functional layer structure and / or the second electrode is possible by means of the electrically conductive structure. As a result, for example, the electrically conductive structure can be switched or switched over very precisely into an electrically non-conducting state. This allows precise protection of the organically functional layer structure, for example compared to a temperature measurement with a sensor outside the carrier or the encapsulation.

According to a further development, the electrically conductive structure is formed on or above the organically functional layer structure.

This allows a planar design of the electrically conductive structure and / or a segmentation of the optically active surface of the optoelectronic assembly.

According to a further development, the optoelectronic assembly further comprises at least one connection for electrical contacting with a module-external energy source. The electrically conductive structure is formed physically and in the current path between the at least one terminal and at least one of the first electrode, the organic functional layer structure or the second electrode.

This makes it possible to arrange the electrically conductive structure in an existing, optically inactive (edge) region of the optoelectronic assembly, for example in the case of an optically transparent assembly and an optically nontransparent electrically conductive structure. This makes it possible for an opaque, electrically conductive structure not to design the optoelectronic assembly regardless of the transparency of the optically active surface of the optoelectronic assembly.

According to a further development, the second electrode has at least one electrode region and an electrically conductive through-contact. The electrically conductive through-contact can be electrically insulated or quasi-electrically insulated from the electrode region, for example by means of a low transverse conductivity. The electrically conductive structure is electrically conductively connected to the organically functional layer structure by means of the electrically conductive through-contact. By means of the indirect connection of the electrically conductive structure through the contact with the organically functional layer structure, the electrically conductive structure can realize a mechanical protective effect in the optoelectronic assembly. By way of example, the electrically conductive structure can form a mechanically rigid or damping protective structure or have a bridging structure which breaks when overheated.

For example, the optoelectronic assembly may be formed in the form of a surface light element. Short-circuited areas may mean a spontaneous failure of the area light element in a surface light element. In a laterally structured, second electrode can be limited by the use of PTC thermistors, the short-circuited regions at only slightly elevated local temperature by increasing the resistance of the PTC thermistor, quasi electrically separated. Furthermore, the luminous area loss in the case of a structured, second electrode, ie in the case of a discretization of the luminous area, can be low, for example not present. The structuring of the second electrode, ie the ratio of the width of the electrode region to the width of the via or the intermediate structure (see below), can be chosen such that occurring dark spots in the optically active surface of the optoelectronic assembly of Eye can not be recognized. For example, the patterning of the second electrode may be selected such that dark spots have a width of less than 100 μm.

According to a development, at least part of the electrically conductive through-contact and the electrically conductive structure are formed in one piece. As a result, the electrical and thermal coupling of the via with the electrically conductive structure is simplified. This can enable a precise switching of the electrical property of the electrically conductive structure and a simple assembly of the optoelectronic assembly. According to a further development, the second electrode has at least a first electrode region and a second electrode region. The first electrode region and the second electrode region are spaced apart by means of an intermediate structure. In other words, the second electrode may be structured. The individual electrode regions can be driven individually or electrically insulated, for example. Depending on the application, the electrode regions can be electrically insulated or electrically coupled by means of the intermediate structure. In a laterally structured, second electrode having at least two electrode regions can be limited by the use of PTC thermistors, the short-circuited regions at only slightly elevated local temperature by increasing the resistance of the PTC thermistor, quasi electrically separated.

According to a development, the electrically conductive structure is formed on or above the intermediate structure. The intermediate structure may have at least one cavity such that the electrically conductive structure bridges the cavity. The first electrode region and the second electrode region can be electrically conductive by means of the bridging, electrically conductive structure be connected. By means of the electrically conductive structure having a positive temperature coefficient on a structured electrode, the robustness is increased by virtue of a short-circuit region of the optoelectronic assembly, for example in the optically active surface of a surface light source, being quasi electrically decoupled in the event of a temperature increase in the event of a short circuit. According to a further development, the electrically conductive structure is mechanically stressed in such a way that, when a further predetermined temperature or a predetermined temperature range is exceeded, the electrically conductive structure breaks. The mechanical stress can be realized, for example, by adhering the electrically conductive structure to the second electrode. The adhesive compound causes a fixation of the electrically conductive structure. A change in temperature can lead to the occurrence of a thermally induced mechanical fracture of the electrically conductive structure. After fracture, the electrically conductive structure has at least a first region and a second region, wherein the first region is electrically insulated from the second region. The further predetermined temperature may be a temperature or the predetermined temperature range may have a temperature range in a range of about 75 ° C to about 650 ° C.

According to a further development, the optoelectronic assembly also has a

Heat distribution structure, wherein the

Heat distribution structure is formed thermally coupled to the electrically conductive structure. By means of the heat distribution structure, a good and / or defined heat dissipation in the case of short circuits is possible, for example in combination with a thin-film encapsulation for protecting the second electrode and / or the organically functional one Layer structure before the heat and / or the material of the heat distribution structure.

According to a development, the second electrode has the heat distribution structure or is designed in this way. This allows a compact design.

According to a development, the heat distribution structure has a cooling unit with a control input and a cooling contact, wherein the control input is electrically coupled to the electrically conductive structure and the cooling contact is thermally coupled at least to the organically functional layer structure such that by means of the electrical conductivity of the electrically conductive structure the cooling of at least the organically functional layer structure is adjustable by means of a heat flow of the cooling unit.

In this case, the electrically conductive structure enables sensor application and precise control of a thermally active device.

According to a further development, the optoelectronic assembly further comprises an encapsulation structure. At least the organically functional layer structure and the electrically conductive structure are hermetically sealed by means of the encapsulation structure with respect to a diffusion of a substance harmful to the organic functional layer structure, for example water and / or oxygen. This allows a compact and robust design of the optoelectronic assembly.

According to a further development, the optoelectronic assembly is designed as a surface component, for example as a surface light source and / or a display. The object is achieved according to a further aspect of the invention by a method for producing an optoelectronic assembly. The method comprises: forming a first electrode, forming an organic functional layer structure, forming a second electrode; and forming an electrically conductive structure having a positive temperature coefficient. The organically functional layer structure is formed electrically coupled to the first electrode and the second electrode. The electrically conductive structure is electrically coupled to the organic functional layer structure such that at least a portion of the electrical current flowing from the first electrode through the organic functional layer structure to the second electrode flows through the electrically conductive structure.

By means of the electrically conductive structure, the robustness of the optoelectronic assembly can be increased compared to a spontaneous failure. For this purpose, previous process systems can be used, for example, without deteriorating other parameters, such as, for example, the service life, the storage stability, the tO-IVLs parameters (current-voltage luminance-voltage characteristics) (current-luminance voltage-luminance properties after production (tO)) , the mechanical stability, the design freedom, the cost of the manufacturing process. Furthermore, conventionally used equipment / processes can be used for manufacturing, for example, thermal evaporation / plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD). Furthermore, it is possible to reduce the clean room quality or the particle purity in the plants during manufacture. As a result, the manufacturing cost can be reduced. The optoelectronic assembly can be formed in a so-called top emitter or bottom emitter design, or be formed as a transparent assembly. In a top emitter or bottom emitter design, the electrically conductive structure can be formed directly on the substrate of the optoelectronic assembly, for example after cleaning, for transparent or non-transparent surface light sources. According to one development of the method, the electrically conductive structure is arranged as a shaped body on or above the organically functional layer structure. This allows a simple connection of the electrically conductive structure with the organic functional layer structure and / or the second electrode.

The object is achieved according to a further aspect of the invention by a method for operating an optoelectronic assembly. The optoelectronic assembly has a first electrode, an organic functional layer structure, a second electrode; and an electrically conductive structure with a positive

Temperature coefficients on. The organically functional layer structure is electrically coupled to the first electrode and the second electrode. The electrically conductive structure is electrically coupled to the organic functional layer structure such that at least a portion of the electrical current flowing from the first electrode through the organic functional layer structure to the second electrode flows through the electrically conductive structure. Furthermore, the optoelectronic assembly has a heat distribution structure with a cooling unit, wherein the cooling unit has a control input and a cooling contact. The control input is electrically coupled to the electrically conductive structure and the cooling contact is thermally coupled at least to the organically functional layer structure such that by means of the electrical Conductivity of the electrically conductive structure, the cooling of at least the organically functional layer structure is adjustable by means of a heat flow of the cooling unit. The method comprises determining the electrical conductivity of the electrically conductive structure; comparing the detected electrical conductivity with a predetermined conductivity, and adjusting the heat flow of the cooling unit depending on the result of the comparison.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it:

Figure 1A is a schematic sectional view of an embodiment of an optoelectronic assembly; Figure 1B is a circuit diagram of a

Embodiment of an optoelectronic assembly;

Figure IC is a schematic sectional view of another embodiment of an optoelectronic assembly;

Figure 1D to 1F is a schematic sectional view of

Embodiments of an optoelectronic assembly;

Figure 2A is a schematic sectional view of

Illustrating the operation of the optoelectronic assembly according to various embodiments;

Figure 2B and 2C are diagrams for illustrating the

Mode of action of the optoelectronic Assembly according to various embodiments;

FIG. 3 shows a flow chart for illustrating the mode of operation of the optoelectronic assembly according to various embodiments

Embodiments;

Figures 4A and 4B are schematic sectional view of

Further developments of optoelectronic assemblies according to various

Embodiments;

FIG. 4C shows a circuit diagram for a further development of an optoelectronic assembly;

FIGS. 5A and 5B are schematic plan views of FIG

Further developments of optoelectronic assemblies according to various

Embodiments;

FIG. 6 is a flow chart of a

Embodiment of a method for producing an optoelectronic assembly;

FIG. 7 is a flowchart of a

Embodiment of a method for operating an optoelectronic assembly; and

Figure 8 is a schematic sectional view of a conventional optoelectronic device.

In the following detailed description, reference is made to the accompanying drawings, which form a part of this specification and in which, by way of illustration specific embodiments are shown in which the invention can be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments may be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

An optoelectronic assembly may have one, two or more optoelectronic assemblies. Optionally, an optoelectronic assembly can also have one, two or more electronic assemblies. An electronic module may have, for example, an active and / or a passive module. An active electronic module may have, for example, a computing, control and / or regulating unit and / or a transistor. A passive electronic module can, for example, a Capacitor, a resistor, a diode or a coil.

An optoelectronic assembly may be an electromagnetic radiation emitting assembly or an electromagnetic radiation absorbing assembly. An electromagnetic radiation absorbing assembly may be, for example, a solar cell or a photodetector. In various embodiments, an electromagnetic radiation emitting assembly may be an electromagnetic radiation emitting semiconductor component and / or a diode emitting electromagnetic radiation, a diode emitting organic electromagnetic radiation, a transistor emitting electromagnetic radiation or a transistor emitting organic electromagnetic radiation be. The radiation may, for example, be light in the visible range, UV light and / or infrared light. In this context, the electromagnetic radiation emitting assembly may be formed, for example, as a light emitting diode (LED) as an organic light emitting diode (OLED), as a light emitting transistor or as an organic light emitting transistor. The light-emitting assembly may be part of an integrated circuit in various embodiments. Furthermore, a plurality of light-emitting assemblies may be provided, for example housed in a common housing. FIG. 1A illustrates an optoelectronic assembly 100 according to various embodiments. Shown on or above a carrier 102 are an electrically active region 114 and an encapsulation structure 112. The electrically active region 114 comprises a first electrode 104, an organic functional layer structure 106, an electrically conductive structure 108 having a positive temperature coefficient, and a second electrode 110th In other words, in various developments, the organically functional layer structure 106 is formed on or above the first electrode 104, the electrically conductive structure 108 on or above the organic functional layer structure 106, and the second electrode 110 on or above the electrically conductive structure 108. At least a portion of the electrically conductive structure 108 is electrically coupled in series with the organic functional layer structure 106 and the second electrode 110.

In the case of an optoelectronic assembly 100 as surface light source, destruction of the organically functional layer structure 106 can be prevented by limiting the current flow through the electrically conductive structure 108. If there is a short circuit (see also FIG. 2A), a defined temperature is established. The supplied heat can be dissipated by means of a heat distribution structure 408 (see also FIGS. 4A-C). By a hybrid embedding of an electrically conductive structure 108 with a positive temperature coefficient, for example in the form of a PTC thermistor, in the optoelectronic assembly 100, the current flow can be reduced at too high a temperature. As a result, the brightness of the light emitted by the optoelectronic assembly can be reduced. Thus, the aging of the optoelectronic assembly can be reduced and the life can be extended.

In the following description, the optoelectronic assembly can be designed as a one-sided, two-sided or omnidirectionally light-emitting assembly. The optoelectronic assembly may be opaque, for example, reflective or transparent. The first electrode 104 may be at least partially transparent or opaque, for example, reflective. Similarly, the electrically conductive structure 108 and / or the second electrode 110 may each be at least partially transparent or opaque, for example be formed reflective.

The electrically active region 114 is configured to emit an electromagnetic radiation from a supplied electrical energy. Alternatively or additionally, the electrically active region 114 is designed to generate an electric current and / or an electrical voltage from a provided electromagnetic radiation. The optoelectronic assembly 100 may be formed as a surface component, for example as a surface light source and / or a display. Alternatively or additionally, the optoelectronic assembly 100 has at least one organic light-emitting diode or is formed in this way.

In other words, the optoelectronic assembly 100 has a first electrode 104, an organic functional layer structure 106, a second electrode 110; and an electrically conductive structure 108 having a positive temperature coefficient. The organic functional layer structure 106 may be electrically coupled to the first electrode 104 and the second electrode 110. The electrically conductive structure 108 may be formed on or above the organic functional layer structure and may be electrically coupled to the organic functional layer structure 106 such that at least a portion of the electrical current flowing from the first electrode 104 through the organic functional layer structure 106 to the second electrode 110 flows through the electrically conductive structure 108 flows.

The positive temperature coefficient electrically conductive structure 108 may also be referred to as PTC thermistor or PTC resistor (positive temperature coefficient PTC). In other words, between the organic functional layer structure 106 and the second electrode 110 may be an additional, cold conductive Resistor layer 108 (positive temperature coefficient - PTC) may be formed. With locally increasing temperature in the organic functional layer structure 106, the resistance increases locally in the cold conductive resistance layer 108, thus reducing the electric current flowing through the cold conductive resistance layer 108. As a result, the brightness of the emitted light is locally reduced in a light-emitting, optoelectronic assembly 100. During operation of the optoelectronic assembly 100, a homogenous current injection and thus, via the illuminated surface, a homogenization of the luminance distribution of the emitted light over the optically active surface and / or a more uniform aging of the optoelectronic assembly 100 can be achieved, for example for large-area OLEDs. components.

The transition temperature of the electrically conductive structure 108 may be lower than the glass transition temperature or the melting temperature of the materials of the organic functional layer structure. As a result, for example, a short circuit in the optically active surface of the optoelectronic assembly 100 can be electrically isolated. For example, at a transition temperature of about 50 ° C, a temperature of, for example, about 30 ° C to about 50 ° C may be set in the organic functional layer structure.

Furthermore, the robustness can be increased by means of the electrically conductive structure 108 in the case of a flexible carrier 102 of the optoelectronic assembly 100.

Furthermore, the electrically conductive structure 108 may be used for a pure sensor application. A change in the temperature, for example, lead to a defined rules of the optoelectronic assembly 100, for example, to turn off the Optoelectronic assembly 100. Another sensor application is, for example, a short-circuit detection, and if necessary, a mechanical elimination of the cause of the short circuit, for example by annealing the defect by means of laser.

The electrically conductive structure 108 may be formed such that the electrically conductive structure below a predetermined temperature is electrically conductive and above the predetermined temperature is electrically non-conductive. For example, the predetermined temperature may have a temperature in a range of about 60 ° C to about 150 ° C. The predetermined temperature should be less than a glass transition temperature or a melting temperature of a material of the organically functional layer structure 106. For example, lower than the glass transition or melting temperature of the material of the organic functional layer structure 106 with the lowest glass transition temperature or melting temperature of the organic functional layer structure 106.

The electrically conductive structure 108 is formed to have an electrical resistance, for example, at RT: in a range of about 0.1 Ω to about 0.5 Ω; at 80 ° C: in a range of about 5 Ω to about 15 Ω; at 100 ° C: in a range of about 20 Ω to about 200 Ω; at 120 ° C: in a range from about 200 Ω to about 1000 Ω and / or at 600 ° C: a value greater than about 1 kΩ.

In various developments, the electrically conductive structure 108 is formed flat on or above the organically functional layer structure 106. Alternatively or additionally, the optoelectronic assembly 100 has an optically active region and an optically inactive region, wherein at least the organic functional layer structure 106 and the electrically conductive structure 108 are formed at least in the optically active area area coverage. Alternatively or additionally, the organic functional layer structure 106 and the electrically conductive structure 108 are formed substantially congruent.

In various developments, the optoelectronic assembly 100 is formed light-emitting, wherein the electrically conductive structure 108 is formed at least translucent for a wavelength range of the emitted light.

In various developments, at least part of the electrically conductive structure 108 and the organically functional layer structure 106 are formed electrically in series with one another.

In various developments, the electrically conductive structure 108 is thermally coupled to the organic functional layer structure 106 and / or the second electrode 110. Alternatively or additionally, at least part of the electrically conductive structure 108 and the organically functional layer structure 106 are formed thermally parallel to one another.

In various developments, the electrically conductive structure 108 with the organically functional layer structure 106 and / or the second electrode 110 has a physical contact.

In various developments, the electrically conductive structure 108 comprises or is formed from a ferroelectric, for example a perovskite, or a pyroelectric. In various developments, the electrically conductive structure 108 comprises or is formed from at least one of the following materials: barium titanate (BaTiO 3; BTO); Lead zirconate titanate {Pb (Zr _x Ti ₁ _ _x ) 03; PZT); Strontium bismuth tantalate (SrBi2Ta20g; SBT); Bismuth titanate (Bi ₄ Ti ₃ O 2; BIT); Bismuth lanthanum titanate (Bi4_ _x La _x Ti30i2; BLT); Bismuth titanate niobate (BissTiNbOg; BTN); Strontium titanate (SrTiO3; STO); Barium strontium titanate (Ba _x Sr ₁ - _x TiO 3; BST); Sodium nitrite (NaN ₂ O); Lithium niobate (LiNbO 3); Potassium sodium tartrate tetrahydrate (KNaC4H406.4H ₂ O; Seignette salt); a hexagonal manganate (RMn03 where R = Y, Sc, In, Ho, Er, Tm, Yb, Lu); 1,1-di (carboxymethyl) cyclohexane; Triglycine sulfate ((CH ₂ NH ₂ COOH) ₃ -H ₂ SO ₄ ; TGS); Polyvinylidene fluoride (PVDF), poly (vinylidene fluoride-trifluoroethylene) P (VDF-TrFE), platinum, carbon black-filled polymers, for example polymer sponges.

In a further development, the electrically conductive structure 108 comprises or is formed from n-doped silicon. Thus, approximately doubling the electrical resistance of the electrically conductive structure 108 is possible with an increase in temperature from about 20 ° C to about 100 ° C.

In various developments, the electrically conductive structure 108 has a matrix and particles, wherein the particles are distributed in the matrix. The matrix may be formed from an electrically conductive material, for example at least one electrically conductive polymer. The particles may comprise a material having positive temperature coefficients, as described in more detail above. In other words, the electrically conductive structure 108 may comprise electrically cold conductive particles in an electrically conductive matrix. As a result, the electrically conductive structure can be formed in any geometrically complex shape, for example organic form. In various developments, the electrically conductive structure 108 has two or more different ones Materials with positive temperature coefficients. In other words, the electrically conductive structure 108 may include a mixture of cold conductive materials. As a result, the transition temperature at which the electrically conductive structure 108 becomes paraelectric can be set, for example with respect to at least one operating parameter of the optoelectronic assembly 100 and / or with respect to at least one material of the organically functional layer structure 106.

For example, in barium titanate alloys, a substitution of barium by lead for an increase and an addition of strontium leads to a lowering of the Curie temperature and thus of the PTC effect. By means of mixing strontium into BaTiO 3, the critical temperature, i. the Curie temperature, in the application-specific temperature range required, for example, to a temperature in a temperature range of about -40 ° C to about 120 ° C.

In various developments, the electrical resistance of the electrically conductive structure 108 can be set by means of the geometric dimension and / or the material of the electrically conductive structure 108, as illustrated, for example, in Table 1.

Table 1:

The electrically conductive structure 108 may have, for example, the electrical resistance shown in Table 1 for the specified material, the dimension and the temperature.

In various refinements, the electrically conductive structure 108 has a transition temperature of greater than approximately 60 ° C. An electrically conductive structure 108 may be used to virtually shut down the optoelectronic assembly or segments thereof, for example, by having or forming the electrically conductive structure 108 of a ceramic referred to above. By means of a mixture of functional ceramics described above, an adjustment to a specific transition temperature of the electrically conductive structure 108 is possible in various developments. For example, for applications in the automotive sector with a maximum permissible temperature of the optoelectronic assembly of 105 ° C, setting the transition temperature of the electrically conductive structure 108 to, for example, 95 ° C possible.

Thus, the customer requirement for high temperatures can be reduced, since a built-in self-protection by means of the integration of the electrically conductive structure 108 in the optoelectronic assembly is feasible.

In various developments, the electrically conductive structure 108 is formed in such a way that the refractive index of the electrically conductive structure 108 changes with temperature for at least one wavelength range of an electromagnetic radiation and / or in at least one direction. For example, the electrically conductive structure 108 may be formed such that the electrically conductive structure 108 is transparent or isotropic below the transition temperature, and is translucent or anisotropic above the transition temperature. Thereby can / can as a sensor application

Temperature distribution and / or a short-circuit region can be determined optically by means of the electrically conductive structure 108. For example, by means of the color or the degree of turbidity in a region of the electrically conductive structure 108, the temperature of the region can be determined. Alternatively or additionally, the electrically conductive structure 108 may be formed such that the temperature change or the temperature distribution in the electrically conductive structure 108 in the non-visible wavelength range can be determined.

In various embodiments, the electrically conductive structure 108 has a thickness in a range of about 100 nm to about 100 μm, for example in a range of about 200 nm to about 50 μm, for example in a range of about 0.2 μm to about 1 pm, for example in a range of about 10 pm to about 100 pm

The electrically active region 114 is hermetically sealed by means of the encapsulation structure 112 with respect to a diffusion of at least one substance which is harmful to the electrically active region 114, for example water, sulfur, oxygen and / or their compound. In other words, in various developments, the optoelectronic assembly 100 may comprise an encapsulation structure 112, wherein at least the organically functional layer structure 106 and the electrically conductive structure 108 are hermetically sealed by means of the encapsulation structure 112 with respect to a diffusion of a substance that is harmful to the organic functional layer structure 106, for example, water, sulfur and / or oxygen. In other words, an optically active structure with first electrode 104, organically functional layer structure 106 and second electrode 110; is together with an electrically conductive structure 108 with positive

Temperature coefficients encapsulated. The optically active Structure and the electrically conductive structure 108 are thus formed monolithically integrated in the optoelectronic assembly 100. The encapsulation structure 112 at least partially surrounds the electrically active region 114, and is described in more detail in FIG.

A hermetic with respect to water and / or oxygen density

Encapsulation structure 112 is understood to be a substantially hermetically sealed structure. For example, a hermetically sealed structure may have a diffusion rate with respect to

Water and / or oxygen of less than about 10 ^-1 g / (m ² d), a hermetically sealed cover and / or a hermetically sealed carrier can, for example, a

Diffusion rate with respect to water and / or oxygen of less than about 10 ^-4 g / (m ² d), for example in a range of about 10 ^-4 g / (m ² d) to about 10 ^-10 g / (m ² d) For example, in a range of about 10 ^-4 g / (m ² d) to about 10 ^-6 g / (m ² d). In various embodiments, a hermetically sealed substance or a hermetically sealed mixture of substances may comprise or be formed from a ceramic, a metal and / or a metal oxide. The optoelectronic assembly 100 may be formed as a light-emitting device through the first electrode 104. Alternatively or additionally, the optoelectronic assembly 100 may be formed as a transparent, light-emitting component and / or a component emitting light through a second electrode 110.

The carrier 102 is formed for example as a foil or a metal sheet. Alternatively or additionally, the carrier 102 comprises or is formed from a glass or a plastic. The carrier 102 may be electrically conductive, for example as a metal foil or a glass or plastic carrier having a conductor structure. Of the Carrier 102 comprises or is formed from glass, quartz, and / or a semiconductor material. Alternatively or additionally, the substrate 102 comprises or is formed from a plastic film or a laminate having one or more plastic films. The carrier 102 may be transparent with respect to the light absorbed and / or emitted by the optoelectronic assembly 100.

In various developments of the carrier 102 is formed mechanically flexible, such as bendable, bendable or formable. For example, the carrier 102 is configured as a foil or a metal sheet. Alternatively or additionally, the carrier 102 has at least one mechanically rigid, non-flexible region.

The first electrode 104 and / or the second electrode 110 may be electrically conductively connected to an electrically conductive carrier 102. As a result, for example, a contacting of the first electrode 104 and / or the second electrode 110 by the carrier 102, which simplifies the contacting of the optoelectronic assembly 100.

The first electrode 104 may be reflective, for example, for a top-emitter optoelectronic assembly 100. Alternatively, the first electrode 104 is transparent with respect to the light emitted and / or absorbed by the organic functional layer structure 106, for example for a transparent optoelectronic assembly 100 or a bottom-emitter optoelectronic assembly,

The first electrode 104 comprises an electrically conductive material, for example a metal. Alternatively or additionally, the first electrode 106 comprises a transparent conductive oxide of one of the following materials: for example, metal oxides: for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium oxide. Tin oxide (ITO). The first electrode has a layer thickness in the range from a monolayer to 500 nm, for example from less than 25 nm to 250 nm, for example from 50 nm to 100 nm.

The organic functional layer structure 106 is configured to emit a light from a supplied electrical energy. Alternatively or additionally, the organically functional layer structure 106 is configured to generate an electrical energy from an absorbed light. The organically functional

Layer structure 106 has a hole injection layer, a hole transport layer, an emitter layer, a

Electron transport layer and an electron injection layer have. The layers of the organic functional layer structure 106 are arranged between the electrodes 104, 110 such that, in operation, electrical charge carriers can flow from the first electrode 104 through the organic functional layer structure 106 into the second electrode 110, and vice versa.

The second electrode 110 may be transparent with respect to the light emitted and / or absorbed by the organic functional layer structure 106.

The first electrode 104 and the second electrode 110 may be the same or different. The second electrode 110 is formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is to say as an electron-injecting electrode.

FIG. 1B illustrates an equivalent circuit diagram of the electrically active region 114 of an optoelectronic assembly which is substantially identical to the optoelectronic assembly 100 illustrated in FIG. 1A.

Further illustrated in FIG. 1B are electrical connections 118, 120 for electrically contacting the Optoelectronic assembly with a module-external electrical energy source.

Shown are a first terminal 118, the first electrode in the form of a resistor 104, the organic functional layer structure 106 in the form of a diode structure, such as a light emitting diode, the electrically conductive structure 108 with positive temperature coefficient with the equivalent circuit of a PTC resistor; the second electrode 110 in the form of an electrical resistor and a second terminal 120.

The first electrode 104 is electrically coupled to the first abutment 118 by means of a first electrical contact and is electrically coupled to the organic-functional layer structure 106 by means of a second electrical contact with an anode contact.

By means of a cathode contact, the organically functional layer structure 106 is further electrically coupled to a first electrical contact of the electrically conductive structure 108 (PTC resistor).

Furthermore, electrically conductive structure 108 is electrically coupled by means of a second electrical contact with a first electrical contact of second electrode 110.

Furthermore, the second electrode 110 is electrically coupled to the second terminal 120 by means of a second electrical contact.

The optoelectronic assembly 100 is configured in various embodiments such that an electric current for operating the optoelectronic assembly 100 from the first terminal 118 through the first electrode 104, through the organic functional layer structure 106 and through the second electrode 108 the second port 120 flows (and / or vice versa), wherein at least a portion of the electric current flows through the electrically conductive structure 108 having positive temperature coefficients. In other words, the electrically conductive structure 108 and the organic functional layer structure 106 are at least partially electrically connected in series or in series with respect to the terminals 118, 120 of the optoelectronic assembly.

In other words:

To the first terminal 118, which is connected to the first electrode 104, a first electrical potential can be applied. The first electrical potential is provided by a device-external power source, such as a power source or a voltage source. Alternatively, the first electrical potential is applied to an electrically conductive carrier 102 and indirectly electrically supplied to the first electrode 104 by the carrier 102. Alternatively, the carrier 102 is formed as a first electrode 104. The first electrical potential is, for example, the ground potential or another predetermined reference potential 1.

To the second terminal 120, which is connected to the second electrode 110, a second electrical potential can be applied. The second electrical potential is provided by the same or a different energy source as the first electrical potential. The second electrical potential is different from the first electrical potential. For example, the second electric potential has a value such that the difference from the first electric potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15V, for example, a value in a range of about 3V to about 12V. FIG. IC illustrates an optoelectronic package 130 according to various embodiments. The in FIG. IC illustrated optoelectronic assembly 130 may be formed substantially identical to one of the above embodiments of an optoelectronic assembly 100. Furthermore, in FIG. IC is shown that the electrically conductive structure 108 may be formed with positive temperature coefficient on the second electrode 110 and is electrically conductively connected by means of electrical vias 116 with the organic functional layer structure 106.

In other words, in various developments, the organically functional layer structure 106 is formed on or above the first electrode 104, the second electrode 110 on or above the organic functional layer structure 106, and the electrically conductive structure 108 on or above the second electrode 110. At least a portion of the electrically conductive structure 108 is electrically coupled in series with the organic functional layer structure 106 and the second electrode 110. In the in FIG. IC illustrated optoelectronic assembly 130 is the electrically conductive structure 108 with positive temperature coefficient by means of at least one

Through contact 116 at least partially electrically formed in series with the organic functional layer structure 106.

In other words, in various developments, the second electrode 110 has at least one electrode region and an electrically conductive through-contact 116. The electrically conductive via 116 may be electrically isolated from the electrode region. The electrically conductive structure 108 may be electrically conductively connected to the organically functional layer structure 106 by means of the at least one electrically conductive through-contact 116. In various developments, the electrically conductive through-contact 116 and the electrically conductive structure 108 have the same material or are formed therefrom. For example, at least part of the electrically conductive via 116 and the electrically conductive structure 108 are formed in one piece. Alternatively or additionally, the material of the electrically conductive through-contact 116 and the material of the electrically conductive structure 108 have different temperature coefficients.

In various developments, at least one electrode (illustrated in FIG. 1C, the second electrode 110) is laterally structured so that the structured electrode has electrode regions which are electrically insulated from one another. In various developments, an electrically conductive structure 108 having positive temperature coefficients can be formed on a structured, second electrode 110 and / or underneath a structured, first electrode 104. In various developments, the electrode 104 has at least a first electrode region and a second electrode region. In various developments, the first electrode 104 is structured, ie has at least two electrode regions, and the second electrode 110 is unstructured. In various developments, the first electrode 104 and the second electrode 110 are structured. In other words, the first electrode 108 has at least a first electrode region and a second electrode region, and the second electrode 110 has at least a first electrode region and a second electrode region. The first electrode 104 and the second electrode 110 may each have an intermediate structure between the first electrode region and the second electrode region. In various developments, the intermediate structure of the first electrode 104 is shifted to the intermediate structure of the second electrode 110, ie, the intermediate structures are not directly opposite or have a lateral offset to each other. Such structuring may be advantageous, depending on where a possible short circuit occurs. The lateral distance between the first electrode region and the second electrode region of the first electrode and / or second electrode should, with the use of the low conductivity of the organic functional layer structure 106, be present no or only a small electrical cross-current within the organic functional layer structure 106.

In various developments, at least one electrode 104, 110 is formed in a structured manner based on its thermal (transverse) conductivity. Such structuring may be necessary, for example, in the case that the thermal conductivity of the material of the electrode is so high that the temperature increase or heat would be transported laterally faster, and thus could damage the organically functional layer structure, as the electrically conductive structure 108 of time needed to switch to the paraelectric state. Alternatively or additionally, such a structuring may be necessary in the event that the thermal conductivity of the material of the electrode is so high that the temperature increase or heat would be further transported, and thus could damage the organically functional layer structure, as the local area the electrically conductive structure 108, which switches to the paraelectric state.

In various developments, at least one

Electrode portion of a structured first electrode and / or a structured second electrode, for example, a surface in a range of about 1 mm ² to about 100 mm ² , for example m a range of about 2 mm ² to about 25 mm ² , for example in a range of about 5 mm ² to about 10 mm ² .

FIG. 1D illustrates an optoelectronic assembly 140 according to various embodiments. The optoelectronic assembly 140 shown in FIG. 1D may be formed substantially identically to one of the embodiments of an optoelectronic assembly illustrated above. It is furthermore illustrated in FIG. 1D that the electrically conductive structure 108 can be formed on the first electrode 104 in various developments, and the organic functional layer structure 106 can be formed on the electrically conductive structure 108.

Thereby, in the substrate process, the electrically conductive structure 108 may be applied over the carrier 102, for example on the first electrode 104, i. even before the organically functional layer structure is formed. As a result, in the method for forming the electrically conductive structures 108, higher temperatures and other processes are permissible than when the electrically conductive structure is formed on or above the organically functional layer structure. For example, the electrically conductive structure may be possible by means of sputtering, or bonding, for example with a thermally and / or electrically conductive adhesive. Furthermore, the substrate process enables sintering of the material of the electrically conductive structure 108 at elevated temperatures, for example at 600 ° C. Suitable materials include (Sr) barium titanate, nickel manganate, strontium titanate, n-doped Si; Metals, for example Pt.

Furthermore, by means of the integration of the electrically conductive structure 108 in the optoelectronic Assembly allows a cost-effective method by reducing the number of external wiring is reduced.

Furthermore, the current reduction by the electrically conductive structure 108 at elevated temperature prolongs the life.

The described method is essentially applicable to all available dimmable bulbs, such as LEDs; and is tolerant to deviations in production.

FIG. IE illustrates an optoelectronic package 150 according to various embodiments. The in FIG. IE illustrated optoelectronic assembly 150 may be formed substantially identical to one of the above embodiments of an optoelectronic assembly. Furthermore, in FIG. IE, the electrically conductive structure 108 may be structured and may act as an electrical connection structure, such as between the first electrode 104 and the first terminal 118. In this example, the electrically conductive structure 108 is in direct physical and electrical contact protected with the organic functional layer structure 106 and / or the second electrode 110, for example by means of a resist (not illustrated) and / or the

Encapsulation structure 112. In this example, the electrically conductive structure 108 can also be applied in the substrate process above the carrier 102, for example on the first electrode 104.

FIG. 1F illustrates an optoelectronic assembly 160 according to various embodiments. The optoelectronic assembly 160 shown in FIG. 1F may be designed essentially identical to one of the embodiments of an optoelectronic assembly illustrated above. Furthermore, in FIG. IE, that structures the electrically conductive structure 108 can be formed and act as an electrical connection structure, for example, between the second electrode 110 and the second terminal 120. In this example, the electrically conductive structure 108 is in direct physical and electrical contact with the organic functional layer structure 106 and / or the first Electrode 104, for example by means of a resist (not illustrated) and / or the encapsulation structure 112.

In various developments, it is important that the contact surface between the electrically conductive structure 108 and the physically connected electrode 104, 110 or organically functional layer structure is defined. The contact surface should not depend on the adjustment of the individual layers of the optoelectronic assembly to each other. This can always be the same

Resistance behavior of the electrically conductive structure can be ensured.

Functional ceramics for the electrically conductive structure 108, can be trimmed by laser alignment (analogous to the resistance in thick-film technology). The functional ceramic is protected within the encapsulation 112.

FIG. 2A illustrates the operating principle of an optoelectronic assembly 200 with an electrically conductive structure 108 having a positive temperature coefficient. The optoelectronic assembly 200 shown in FIG. 2A is essentially identical to one of the embodiments of an optoelectronic assembly described above. Also shown is a structured, second electrode with at least two juxtaposed

Electrode regions. Between the electrode regions is an intermediate structure, for example with a cavity. Alternatively or additionally, the intermediate structure has a contact 116. The electrically conductive structure 108, by means of the contact 116 with the organic functional layer structure 106 may be electrically connected. Alternatively or additionally, the electrode regions are electrically conductively connected by means of the electrically conductive structure 108.

Also shown is a particle 202 that could have entered the optoelectronic assembly 100 during the production of the optoelectronic assembly 200, for example during the production of the organically functional layer structure 106 or during the formation of the second electrode 110. The particle 202 has an influence on the electrical properties in a region 204 of the optoelectronic assembly 100.

If a short circuit occurs in an electrode region (illustrated in FIG. 2A as a short-circuit region 204), this region heats up, for example due to ohmic loss. Heating causes an increase in the electrical resistance of a PTC thermistor, i. to increase the electrical resistance of the electrically conductive structure 108, for example by a factor of 10,000. Increasing the electrical resistance of the electrically conductive structure 108 causes no electric current to flow through the short-circuit region 204.

FIG. FIG. 2B is a diagram illustrating a calculation example of an optoelectronic assembly having an electrically conductive structure. FIG. In the graph 220, the brightness 210 in Cd / m2 of the light emitted by an optoelectronic assembly according to various embodiments is a function of the temperature 208 in ° C of the optoelectronic assembly for three examples 212, 214, 216 of electrically conductive structures 108 having different geometrical dimensions illustrated. The brightness 210 may alternatively be referred to as luminance. In a first example 212, the electrically conductive structure 108 has a dimension of 2 mm × 2 mm × 0.001 mm. In a second example 214, the electrically conductive structure 108 has a dimension of 1 mm × 1 mm × 0.001 mm. In a third example 216, the electrically conductive structure 108 has a dimension of 2 mm × 10 mm × 0.001 mm.

The electrically conductive structure 108 is formed in the examples 212, 214, 216 each of the same material as a PTC thermistor with 20% SrTiBa03.

For the calculation, it was assumed that essentially only the electrical resistance of the electrically conductive structure is temperature-dependent. The control takes place at a constant operating current. At constant operating current, an unstable equilibrium can be set. The optoelectronic assembly has for the

Calculation example, an optically active area of about 2

46 cm up. The brightness of the emitted light at 20 ° C is approximately 3300 Cd / m2.

The course of the determined brightnesses 210 of the three examples 212, 214, 216 at different temperatures 208 shows a decrease in brightness to higher temperatures when the PTC resistor is connected in series with the OLED. It can be seen from the comparison of the courses of Examples 212, 214, 216 that the onset of the

Brightness adjustment can be adjusted by a dimensional change of the electrically conductive structure 108. An adaptation of the dimension of the electrically conductive structure 108 is possible, for example, by means of a laser blank (laser trimming). An even better adaptation of the use of the electrically conductive structure 108 is possible by means of the composition of the PTC thermistor (not shown). FIG. 2C shows a diagram of a calculation example for manufacturing tolerance for an optoelectronic assembly with an electrically conductive structure.

In the graph 230, the brightness 210 in Cd / m2 of the light emitted by an optoelectronic assembly according to various embodiments is a function of the temperature 208 in ° C of the optoelectronic assembly for three examples 222, 224, 226 of electrically conductive structures 108 having different geometrical dimensions illustrated.

In the fabrication of the electrically conductive structure 108, a tolerance in the dimensions of about 5% is acceptable. Thus, in the first example 212 of FIG. 2B, the lateral deviation may be 100 .mu.m and the layer thickness deviations 50 nm. By way of illustration, FIG. 2C illustrates brightness 210 as a function of temperature 208 for the first example, a fourth example 224, and a fifth example 226. In the fourth 224, the electrically conductive structure 108 has a dimension of 1.9 mm × 1.9 mm × 0.001 m. In the fifth example 226, the electrically conductive structure 108 has a dimension of 2 mm × 2 mm × 0.00105 mm. The electrically conductive structure 108 is formed in the examples 212, 224, 226 each of the same material as a PTC thermistor with 20% SrTiBaC> 3,

The error or deviations in the dimensions of the electrically conductive structure are the smaller, the larger the electrically conductive structure 108 is in its dimensions.

For the calculation of FIG. 2C, it was assumed, as in FIG. 2B, that essentially only the electrical Resistance of the electrically conductive structure is temperature-dependent. The control takes place at a constant operating current. The optoelectronic assembly has an optically active area of approximately 46 cm ² for the calculation example. The brightness of the emitted light at 20 ° C is about 3300 Cd / m.

It can be seen from FIG. 2C that with a conventional tolerance of 5% in production, with an optoelectronic assembly with integrated electrically conductive structure 108, the brightness 210 changes only marginally.

FIG. 3 illustrates a flowchart 300 intended to illustrate the effect of the electrically conductive structure 106 in an optoelectronic assembly, wherein the optoelectronic assembly is substantially identical to one of the above-described embodiments of an optoelectronic assembly.

In an area 204 (step 302) (illustrated as short-circuit area 204 in FIG. 2), an electrical short-circuit occurs due to a particle 202. In the short-circuit region 204, a high temperature increase occurs (step 304), for example such that the temperature T of the short-circuit region 204 is higher than the Curie temperature Tc (also referred to as the transition temperature) of the material of the electrically conductive structure 108.

Due to the temperature increase, the electrically conductive structure 108 (step 306) becomes high-impedance. The electrically conductive structure 108 prevents current flow through the short-circuit region 204.

This may cause (step 308) to cool the short-circuit region 204 to a temperature below the Curie temperature of the electrically conductive structure 108 lead.

The further course of the current flow in the short-circuit region 204 is dependent on (step 310) whether the short-circuit is reversible or irreversible.

A short circuit can occur, for example, due to particle contamination and mechanical stress on the particle contamination area. In this case, the short circuits are substantially irreversible, since the particle 202 upon mechanical stress forces the second electrode 110 through the organic functional layer structure 106 onto the first electrode 104 (see FIG. 7).

If the short circuit is still present, a self-adjustment of an average temperature at the short-circuit region 204 below the Curie temperature of the electrically conductive structure 108, for example below the temperature at which the organic functional layer structure 106 is damaged, occurs (step 312). A static dark spot is formed.

The high resistance of the electrically conductive structure 108 having positive temperature coefficients is reduced at temperatures below the Curie temperature. Depending on the response time of the electrically conductive structure 108 with positive temperature coefficients, for example 5 s, the short circuit can occur again.

The electrically conductive structure 108 causes a current limitation, so that (step 314) due to the still increased lead resistance, the optoelectronic assembly in the short-circuit region 204 may still be functional. In the short-circuit region 204, the temperature may therefore be increased locally. The temperature control, ie the heat dissipation, can be defined by additional layer materials for example, via a heat distribution structure which will be described in more detail below (see FIGS.4A, B).

However, a short circuit can also be reversible, meaning that it will no longer be available after a while. For example, the particle 202 and / or the short-circuit region 204 can be burned out. Alternatively or additionally, for example, the electrically conductive structure 108 at high temperatures, (T> Tc) break up by means of thermal stress and thus electrically isolate the short-circuit region 204. In this case, the small perturbation static optoelectronic assembly (step 316) functions as a static dark spot in the optically active area.

As an alternative to a short circuit, the temperature increase can also be effected locally by a different current injection into the organically functional layer structure 106. In this case, the electrically conductive structure 108 homogenizes the current distribution laterally in the optoelectronic assembly 100.

FIG. 4A illustrates an optoelectronic assembly that is substantially identical to one of the above-described embodiments of an optoelectronic assembly, for example, substantially identical to the optoelectronic assembly illustrated in FIG. 1A. Further illustrated in FIG. 4A is a heat distribution structure 408 provided between the second electrode 110 and the electrically conductive structure 108. The heat distribution structure 408 is configured to dissipate and / or distribute heat of the electrically conductive structure 108. In other words, in various developments, the optoelectronic assembly 100 also has a

Heat distribution structure 408 on. The

Heat distribution structure 408 may be connected to the electrical conductive structure 108 may be formed thermally coupled. In various developments, the heat distribution structure 408 is formed on or above the organic functional layer structure 106 and / or the electrically conductive structure 108.

By means of the heat distribution structure 408, a defined heat conduction or heat storage can be achieved. Thus, in conjunction with the discretization of the second electrode, ie the size of the electrode regions of the second electrode or the cell size, a defined temperature can be set or formed in the event of a permanent, for example irreversible, short circuit. In this area, the electrically conductive structure 108 can operate in the self-regulating range. This allows the optoelectronic package 100 to continue operating even though a short circuit is still present. The heat distribution structure 408 may be used, for example, as a heat conducting foil. The heat distribution structure 408 may include a heat conductive layer or may be formed of a thermally conductive material. A heat-conducting structure can be understood as having as its product its thickness d and its thermal conductivity k a value of greater than about 1000 pW / K, for example greater than about 5000 pW / K, for example greater than about 20000 pW / K. For example, the thickness of the layer may be less than about 10 mm, for example, less than about 2 mm, for example, less than about 100 μm. A heat-conducting structure may comprise, for example, a graphene layer, for example a graphene-coated film, for example an aluminum foil, copper foil or a foil coated with aluminum or copper. The heat distribution structure 408 may include or be formed from one of the following materials: a metal or a metal alloy, for example, Cu, Ag, Au, Pt, Pd, Al; Sic, an A1N, a paraffin. In various developments, the second electrode 110 is formed as a heat distribution structure 408 or has such. In various developments, the organically functional layer structure 106 and the electrically conductive structure 108 are formed monolithically integrated by means of the encapsulation structure 112. PIG.4A further illustrates a configuration of an encapsulation structure 112, wherein the encapsulation structure 112 may comprise a thin-film encapsulation 402, an adhesion layer 404 and a cover 406.

By means of the encapsulation structure 112, the first electrode 104, the organic functional layer structure 106 and the second electrode 110 are protected from ingress of a harmful substance. In other words, the encapsulation structure 112 is hermetically sealed with respect to diffusion of water and / or oxygen through the encapsulation structure 112 into the organic functional layer structure 106. The encapsulation structure has, for example, a barrier thin layer 402, a decoupling layer, a connection layer 404, a getter and / or a cover 406.

The barrier film 402 comprises or is formed from any of the following materials: alumina, zinc oxide, zirconia, titania, hafnia, tantalum, lanthania, silica, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66 , as well as mixtures and alloys thereof.

The input / outcoupling layer has a matrix and scattering centers with respect to the electromagnetic radiation distributed therein, wherein the average refractive index of the input / outcoupling layer is greater or smaller than the mean refractive index of the layer from which the electromagnetic Radiation is provided. Furthermore, one or more antireflection layers (for example, combined with the second barrier thin layer) may additionally be provided in the organic optoelectronic component 300.

The bonding layer 404 is formed of an adhesive or a varnish. In one development, a connecting layer made of a transparent material has particles which scatter electromagnetic radiation, for example light-scattering particles. As a result, the connecting layer acts as a scattering layer, which leads to an improvement in the color angle distortion and the coupling-out efficiency.

In a further development, an electrically insulating layer (not shown) is formed between the second electrode 110 and the connecting layer 404, for example SiN, for example with a layer thickness in a range from approximately 300 nm to approximately 1.5 μm, for example with a layer thickness in FIG a range of about 500 nm to about 1 μπι to protect electrically unstable materials, for example during a wet chemical process.

In various developments, the electrically conductive structure 108 is configured as an adhesive layer.

In various developments, the connection layer 404 has the electrically conductive structure 108.

The layer of getter comprises or is formed from a material that absorbs and binds substances that are detrimental to the electrically active region, such as water vapor and / or oxygen. For example, a getter comprises or is formed from a zeolite derivative. The layer with getter has a layer thickness of greater than approximately 1 pm, for example a layer thickness of several pm. On or above the connection layer 404, the cover 406 is formed or arranged. The cover 406 is connected to the electrically active region 114 by means of the connection layer 404 and protects it from harmful substances. The cover 406 is, for example, a glass cover, a metal foil cover or a sealed plastic film cover. The glass cover is connected, for example, by means of a frit bonding / glass soldering / seal glass bonding by means of a conventional glass solder in the geometric edge regions of the organic optoelectronic component.

FIG. 4B illustrates an optoelectronic assembly which is substantially identical to one of the above-described embodiment of an optoelectronic assembly, for example substantially identical to the one shown in FIG. IC or FIG.4A illustrated optoelectronic assembly. FIG. 4B further illustrates that the heat distribution structure 408 may be in physical contact with the electrically conductive structure 108 in various embodiments, and the second electrode 110 may be exposed to physical contact with the heat distribution structure 408. For example, the electrically conductive structure 108 is on or formed over the second electrode 110 and electrically connected by means of vias 116 with the organic functional layer structure 106. The heat distribution structure 408 is formed on or over the electrically conductive structure 108 and thermally coupled thereto.

In various developments is the

Heat distribution structure 408 formed electrically conductive. For example, the heat distribution structure 408 is electrically disposed between the terminals 118, 120 such that a portion of the electrical current flowing through the organic functional layer structure 106 flows through the heat distribution structure 408. In different Further developments, the heat distribution structure 408 is arranged between the first electrode 104 and the second electrode 110. Alternatively, the heat distribution structure 408 is dielectrically or electrically non-conductive. The

Heat distribution structure 408 may, for example, form an electrical insulation. In various developments, the

Encapsulation structure 112 at least a portion of the heat distribution structure 408 on.

In various developments, the optoelectronic assembly 100 has an intermediate layer between the encapsulation structure 112 and the organically functional layer structure 106. The intermediate layer may have a soft material as compared to the encapsulation structure 112 and act as a cushioning layer. The intermediate layer may be electrically conductive. Alternatively, the intermediate layer is electrically non-conductive.

In various developments, the optoelectronic assembly 100 has a beam-path-influencing structure. A beam-influencing structure influences the beam path of the emitted light, for example, in the case of a surface light source. A beam-influencing structure comprises, for example, nanoparticles in a layer for changing the refractive index of the layer and / or scattering particles in a layer for diffusing light. A beam-influencing structure is, for example, a coupling-out structure for an optoelectronic assembly in top emitter or bottom emitter design.

PIG. 4C illustrates an optoelectronic assembly that is substantially identical to one of the above-described embodiments of an optoelectronic assembly. It is further illustrated in FIG. 4C that the optoelectronic assembly 430 may include a control unit 412 and a cooling unit 414. The control unit 412 is electrically coupled by means of at least one supply line 418 or connected to an assembly-external electrical energy source (not illustrated). The module-external electrical energy source provides the operating current and the operating voltage for the optoelectronic assembly by means of the at least one supply line 418.

Furthermore, the control unit 412 is electrically connected to the first electrode and the second electrode by means of connection lines 422 (illustrated in FIG. 4C with a light-emitting diode equivalent circuit diagram 106). By means of the connecting lines 422, an electric current flow from the first electrode through the organic functional layer structure to the second electrode is made possible, wherein at least part of this electric current flows through the electrically conductive structure.

Furthermore, the control unit 412 is electrically connected to the electrically conductive structure by means of at least one detection line 426. By means of the at least one detection line 426, the electrical resistance of the electrically conductive structure can be determined. Furthermore, the control unit 412 is electrically connected to the cooling unit 414 by means of at least one control and / or supply line 424. The cooling unit 414 has a control input and a cooling contact. The control input is electrically coupled to the electrically conductive structure 108 by means of the control and / or supply line 424, the control unit and the determination line 426. The cooling contact is thermally coupled at least to the organically functional layer structure 106. The Cooling unit 414 is configured to provide a heat flow 416. The cooling unit may be configured such that the heat flow 416 is adapted to cool the surface to which it is directed. In other words, the cooling unit 414 is coupled to the electrically conductive structure 108 and at least the organically functional layer structure 106 such that the heat dissipation of at least the organically functional layer structure 106 by means of the determined electrical conductivity or the determined electrical resistance of the electrically conductive structure 108 a heat flow 416 of the cooling unit 414 is adjustable.

By means of the control and / or supply line 424, the heat flow 416, i. the cooling capacity of the cooling unit 414 can be adjusted.

In various developments, the

Heat distribution structure 408, the cooling unit 414 on.

In various developments, the

Heat distribution structure 408 a thermally passive device and / or a thermally active device. A thermally passive device may be thermally coupled to a thermally active device.

A thermally passive component may be formed, for example, as a cooling surface, a heat pipe or a heat sink.

A thermally active component has actively generated, ie, by applying an electrical energy and / or controllable or controllable heat flow. A thermally active device may be synonymously referred to as a cooling unit 414. A cooling unit is a device that actively generates a heat flow 416, such as cooling (illustrated in PIG.4C). For example, a cooling unit 414 may include at least one of the following Components include: a fan, a fan, a chiller, for example, be an absorption or an adsorption, a

Diffusion absorption machine, a compression refrigeration system, a steam jet refrigerator, a Pulsröhrenkühler, a Peltier element, a magnetic cooling, a chiller according to the Linde method or evaporative cooling, Thus, a reduction of the self-heating optoelectronic assembly 430 is made possible by an automated control of the cooling unit. With automated switching points this is possible directly on the carrier 102. This makes it possible to detect the temperature of the optoelectronic assembly directly on the luminous surface, which is not possible with external temperature measurements.

In one example, the optoelectronic assembly is configured as a tail lamp in the automotive field. The light-emitting unit of the optoelectronic assembly can be any light-emitting unit, for example in the form of a light-emitting diode, an organic light-emitting diode (illustrated in FIG. 4C) or another conventional electrical, light-emitting component that heats up during operation. A voltage is tapped by means of a detection line 426 via the electrically conductive structure 108 and fed back to a control unit 412. For example, the control unit 412 may control a cooling element 414, such as a fan or fan. The control unit 412 can also be activated in the idle state of the vehicle, so that the full brightness of the emitable light is already available when starting the vehicle.

In various developments, the control unit 412 can also be used for other electric current collectors. FIG. 5A illustrates a schematic plan view of a second electrode 110 and an electrically conductive structure 108 with positive temperature coefficients of an optoelectronic assembly. The optoelectronic assembly of the in FIG. 5A may be substantially identical to one of the embodiments of one of the optoelectronic assemblies described above. FIG. 5A further illustrates that the second electrode 110 may be structured. Between the structured regions of the second electrode 110, material with positive temperature coefficients can be arranged. The second electrode 110 can thus have regions that are at least partially, for example completely, laterally surrounded by an electrically conductive structure 108 and / or at least one contact 116. The surrounding material may form the at least one via 116 and / or the electrically conductive structure 108.

In various developments, the second electrode 110 has at least a first electrode region and a second electrode region. The first electrode region and the second electrode region may be spaced apart by means of an intermediate structure. In various developments, the first electrode region and the second electrode region are electrically connected to one another, for example electrically connected, by means of the electrically conductive structure 108.

In various developments, the electrically conductive structure is formed on or above the intermediate structure. The intermediate structure has at least one through contact. In various developments, the electrically conductive structure is electrically conductively connected by means of at least one through contact with the organically functional layer structure.

In various developments, the intermediate structure has an electrically conductive region, which is electrically can be formed isolated from the first electrode region and the second electrode region.

FIG. 5B illustrates a schematic plan view of a second electrode 110 and an electrically conductive structure 108 with positive temperature coefficients of an optoelectronic assembly. The optoelectronic assembly of the elements illustrated in FIG. 5B may be substantially identical to one of the embodiments of one of the optoelectronic assemblies described above. FIG. 5B further illustrates that the second electrode 110 may be structured. The structured regions of the second electrode 110 may be electrically and / or thermally connected by means of the electrically conductive structure 108 having positive temperature coefficients. The electrically conductive structure 108 has, for example, a bridge-shaped structure. In other words, between the structured regions of the second electrode 110, for example, an air gap can be formed, which is bridged by an electrically conductive structure 108. For example, the air gap can contribute to the thermal insulation or dissipation of heat. As a result, the electrically conductive structure 108 may break by means of thermal stress in the event of a short circuit or other high temperature rise. As a result, individual structured regions of the second electrode 110 can be electrically insulated from one another, for example, be permanently electrically isolated from one another, for example, be electrically irreversibly isolated from one another.

In other words:

In various developments, the electrically conductive structure 108 is formed on or above the intermediate structure. The intermediate structure has at least one cavity such that the electrically conductive structure bridges the cavity and the first electrode region and the second electrode region is electrically conductively connected to one another by means of the bridging, electrically conductive structure. For example, the intermediate structure and / or the cavity for thermal insulation or dissipation of heat contribute. In various developments, the electrically conductive structure 108 is mechanically stressed in such a way that, when a further, predetermined temperature or a predetermined temperature range is exceeded, the electrically conductive structure breaks. After fracture, the electrically conductive structure has at least a first region and a second region, wherein the first region is electrically insulated from the second region. In various developments, the further predetermined temperature has a temperature or the predetermined temperature range has a temperature range in a range from approximately 60 ° C. to approximately 650 ° C.

In other words:

In various developments, the electrically conductive structure 108 has at least a first region and a second region. The first region may be formed adjacent to the second region. The first region may be substantially thermally insulated from the second region, for example by means of the cavity below the electrically conductive structure and / or gap between the first region and the second region formed by the fracture. Furthermore, the first region can be indirectly connected electrically conductively to the second region, for example by means of a

Electrode region of the second electrode. In other words, in various developments, the electrically conductive structure 108 is formed as a structured supply line for the structured, second electrode 110.

In addition, the electrically conductive structure 108 may include at least a third region, wherein the first Area and the second area are interconnected by means of the third area. The thermal insulation of the first region from the second region can be realized, for example, by means of a low transverse conductivity in the third region of the electrically conductive structure.

In various developments, the electrically conductive structure 108 can break open at a high temperature, for example due to thermal stresses. The high temperature can be caused for example by an electrical short circuit. For example, the high temperature has a value above the Curie temperature of the material of the electrically conductive structure 108. In this case, the electrically conductive structure 108 leads to a permanent decoupling of the short-circuit region 204 (see FIG. 2) from the current path.

The transition temperature of the electrically conductive structure 108, ie, the temperature at which the electrically conductive structure 108 becomes electrically non-conductive, should be below the melting point and / or glass transition temperature of the materials of the organic functional layer structure 106. For example, barium titanate as the material of the electrically conductive structure 108 has a transition temperature of about 120 ° C. As a result, damage to the organically functional layer structure 106 can be prevented if the optoelectronic assembly 100 overheats. An electrically conductive structure 108 with at least one PTC thermistor bridge bridging an intermediate structure between two electrode regions and electrically conductively connecting, should have a minimum possible width between the electrodes, for example in the pm range. As a result, the intermediate structure and / or the electrically conductive structure can apparently be insignificant. For a viewer of the Optoelectronic assembly thus presents a quasi-homogeneous luminous surface.

FIG. 6 illustrates a flowchart for a method 600 for manufacturing an optoelectronic assembly according to various embodiments. The optoelectronic assembly may be formed substantially identical to one of the above-mentioned embodiments of an optoelectronic assembly.

In various embodiments, a method 600 of manufacturing an optoelectronic assembly 100 is provided. The method comprises: forming 602 a first electrode, forming 604 an organic functional layer structure, forming 606 a second electrode; and forming 608 an electrically conductive structure having a positive temperature coefficient. The organically functional layer structure is formed electrically coupled to the first electrode and the second electrode. The electrically conductive structure is formed on or above the organic functional layer structure. The electrically conductive structure is electrically coupled to the organic functional layer structure such that at least a portion of the electrical current flowing from the first electrode through the organic functional layer structure to the second electrode flows through the electrically conductive structure.

In other words, the method 600 includes: forming 604 an organic functional structure on or above a first electrode; forming 606 a second electrode on or over the organic functional structure; and forming an electrically conductive structure having positive temperature coefficients 608 such that at least a portion of the electric current flowing from the first electrode through the organic functional layer structure to the second electrode flows through the electrically conductive structure. The electrically conductive structure may be formed between the organic functional structure and the second electrode. Alternatively or additionally, at least a part of the electrically conductive structure can be formed on the second electrode and be electrically conductively connected to the organically functional structure by means of a through contact through the second electrode. In other words, the formation 606 of the second electrode may include forming at least a first electrically conductive electrode region and a second electrically conductive electrode region that together form the second electrode and forming at least one electrical via between the first electrically conductive electrode region and the first electrode second electrically conductive electrode region is formed. Alternatively, forming the second electrode 606 includes forming at least one electrically conductive electrode region and forming at least one electrical via through the at least one electrode region. The electrically conductive structure is formed in these cases over the at least one via and at least one electrode region.

Alternatively, the electrically conductive structure may be formed on the organic functional structure and the second electrode. Alternatively or additionally, the second electrode may have at least one first electrode region and one second electrode region, wherein the first electrode region and the second electrode region are spaced apart from one another by means of an intermediate structure. Alternatively or additionally, the electrically conductive structure may be formed on or above the intermediate structure and the intermediate structure may have at least one cavity such that the electrically conductive structure bridges the cavity and the first electrode region and the second electrode region are electrically conductively connected by means of the bridging, electrically conductive structure are. Alternatively or additionally, the electrically conductive Structure be mechanically stretched designed such that when exceeding a further predetermined temperature or a predetermined temperature range, the electrically conductive structure breaks. In other words, the formation 606 of the second electrode may include forming at least a first electrically conductive electrode region and a second electrically conductive electrode region, which together form the second electrode. Alternatively or additionally, the second electrode may comprise at least a first electrode region and a second electrode region, wherein the first

Electrode region and the second electrode region are spaced apart by means of an intermediate structure. Alternatively or additionally, the electrically conductive structure may be formed on or above the intermediate structure and the intermediate structure may have at least one cavity such that the electrically conductive structure bridges the cavity and the first electrode region and the second electrode region are electrically conductively connected by means of the bridging, electrically conductive structure are. Alternatively or additionally, the electrically conductive structure may be of a mechanically tensioned design such that, when a further, predetermined temperature or a predetermined temperature range is exceeded, the electrically conductive structure breaks.

In various developments, the electrically conductive structure is arranged as a shaped body on or above the organically functional layer structure. In various developments, the shaped body has a planar structure and a contact structure, wherein the contact structure is arranged on or above the planar structure and wherein the planar structure and the contact structure are formed as one piece.

In various developments, the shaped body is applied by means of an electrically conductive adhesive on or above the organically functional layer structure. In various developments, the electrically conductive structure is deposited as a coating on or above the organically functional layer structure. The electrically conductive structure, ie the cold conductive resistance layer is applied for example by means of a vapor deposition or deposition process.

For example, the electrically conductive structure 108 is formed from barium titanate, platinum or carbon black filled polymers.

In other words, in various developments, the electrically conductive structure is applied over a large area on or above the organically functional layer structure, for example applied, as illustrated, for example, in FIG. 1A. The large area application is technically easy to implement. Furthermore, the large-area application may be free of masking or masking processes.

Alternatively, the electrically conductive structure is applied in a structured manner, as shown for example in FIG. 5B is illustrated. In various embodiments, the electrically conductive structure is formed such that the at least two electrodes of the patterned electrode are electrically connected in parallel, i. have substantially the same electrical potential.

The application of the electrically conductive structure can be effected, for example, by means of sputtering, printing or a transfer process of the electrically conductive structure of, for example, a film. The structured electrically conductive structure allows a defined adaptation to the geometry of the patterned electrode. Furthermore, in the case of thermally induced rupture of the electrically conductive structure, simple stripping of the short-circuiting region concerned is possible. The structured electrically conductive structure and / or the structured (second) electrode may be formed in any geometry. In various aspects, a method 700 for operating an optoelectronic assembly is provided. The method comprises determining 702 the electrical conductivity of the electrically conductive structure; a comparison 704 of the determined electrical conductivity with a predetermined conductivity, and a setting 706 of the heat flow of the cooling unit as a function of the result of the comparison.

The optoelectronic assembly can essentially be designed according to one of the developments described above. By way of example, the optoelectronic assembly has a first electrode, an organically functional layer structure, a second electrode; and an electrically conductive structure having a positive temperature coefficient, wherein the electrically conductive structure is electrically conductive at a first temperature and is electrically nonconductive at a second temperature. The organically functional layer structure is electrically coupled to the first electrode and the second electrode. The electrically conductive structure is electrically coupled to the organic functional layer structure such that at least a portion of the electrical current flowing from the first electrode through the organic functional layer structure to the second electrode flows through the electrically conductive structure. Furthermore, the optoelectronic assembly has a heat distribution structure with a cooling unit, wherein the cooling unit has a control input and a cooling contact. The control input is electrically coupled to the electrically conductive structure and the cooling contact is thermally coupled at least to the organically functional layer structure such that by means of the electrical conductivity of the electrically conductive structure Heat dissipation of at least the organically functional layer structure is adjustable by means of a heat flow of the cooling unit. The predetermined temperature may for example be an allowable limit, for example 105 ° C in the automotive sector.

The determining 702 and comparing 704 may be done in a control unit, for example. The setting 706 may be, for example, a signal to a throttle of the cooling unit.

The invention is not limited to the specified embodiments. For example, the optoelectronic assembly may be formed as a photodetector and / or a display.

Claims

claims

1. Optoelectronic assembly (100, 130, 140, 150, 160), with

A first electrode (104),

An organic functional layer structure (106),

A second electrode (110); and

An electrically conductive structure (108) having a positive temperature coefficient,

o wherein the organic functional layer structure (106) is formed electrically coupled to the first electrode (104) and the second electrode (110), and

o wherein the electrically conductive structure (108) is electrically coupled to the organic functional layer structure (106) such that at least a portion of the electrical current flowing from the first electrode (104) through the organic functional layer structure (106) to the second Electrode (110) flows, flows through the electrically conductive structure (108),

wherein the second electrode (110) has at least a first electrode region and a second electrode region, wherein the first electrode region and the second electrode region are spaced apart from one another by means of an intermediate structure,

Wherein the electrically conductive structure (108) is formed on or above the intermediate structure and the intermediate structure has at least one cavity such that the electrically conductive structure (108) bridges the cavity and the first electrode region and the second electrode region by means of the bridging, electrically conductive Structure (108) are electrically conductively connected, • wherein the electrically conductive structure (108) is formed mechanically stretched such that when a further predetermined temperature or a predetermined temperature range is exceeded, the electrically conductive structure (108) breaks.

2. Optoelectronic assembly (100, 130, 140, 150, 160) according to claim 1,

wherein the electrically conductive structure (108) is formed such that the electrically conductive structure (10 of a v planar temperature is electrically lei st and above he predetermined temperature is electrically non-conductive.

3. Optoelectronic assembly (100, 130, 140, 150, 160) according to one of claims 1 or 2,

wherein at least a portion of the electrically conductive structure (108) and the organic functional layer structure (106) are electrically connected in series with each other.

4. Optoelectronic assembly (100, 130, 140, 150, 160) according to one of claims 1 to 3,

wherein the electrically conductive structure (108) has a physical contact with at least the first electrode (104), the organic functional layer structure (106) or the second electrode (110).

5. Optoelectronic assembly (100, 130, 140, 150, 160) according to one of claims 1 to 4,

wherein the electrically conductive structure (108) is formed on or above the organically functional layer structure (106). 6. Optoelectronic assembly (100, 130, 140, 150, 160) according to one of claims 1 to 5, further comprising: at least one connection (118, 120) for electrical contact with a module external Energy source, wherein the electrically conductive structure (108) is formed physically and in the current path between the at least one terminal and at least one of the first electrode (104), the organic functional layer structure (108) or the second electrode (110).

7. Optoelectronic assembly (100, 130, 140, 150, 160) according to one of claims 1 to 6,

wherein the second electrode (HO) comprises at least one

An electrically conductive via (116) is electrically insulated from the electrode region, and wherein the electrically conductive structure (108) by means of the electrically conductive through-contact (116) with the organically functional layer structure ( 106) is electrically conductively connected.

8. Optoelectronic assembly (100, 130, 140, 150, 160) according to claim 7,

wherein at least a part of the electrically conductive via (116) and the electrically conductive structure are formed in one piece.

9. Optoelectronic assembly (100, 130, 140, 150, 160) according to one of claims 1 to 8,

further comprising a heat distribution structure (408), wherein the heat distribution structure (408) is thermally coupled to the electrically conductive structure (108).

10. Optoelectronic assembly (100, 130, 140, 150, 160) according to claim 9,

wherein the second electrode (HO) the

Heat distribution structure (408) or is formed.

11. Optoelectronic assembly (100, 130, 140, 150, 160) according to claim 9 or 10,

wherein the heat distribution structure (408) comprises a cooling unit (414) having a control input and a cooling contact, wherein the control input is electrically coupled to the electrically conductive structure (108) and the cooling contact is thermally coupled at least to the organic functional layer structure (106) that the cooling of at least the organically functional layer structure (106) by means of a heat flow (416) of the cooling unit (414) is adjustable by means of the electrical conductivity of the electrically conductive structure (108).

12. An optoelectronic assembly (100, 130, 140, 150, 160) according to one of claims 1 to 11,

further comprising an encapsulation structure (112), wherein at least the organically functional layer structure (106) and the electrically conductive structure (108) are hermetically sealed by means of the encapsulation structure (112) with respect to a diffusion of a substance which is harmful to the organic functional layer structure (106), preferably Water and / or oxygen.

13. Optoelectronic assembly (100, 130, 140, 150, 160) according to one of claims 1 to 12,

wherein the optoelectronic assembly (100, 130, 140, 150, 160) is designed as a surface component, preferably as a surface light source and / or a display.

14. Method (600) for producing an optoelectronic assembly (100, 130, 140, 150, 160), the method comprising:

Forming a first electrode (104),

Forming an organic functional layer structure (106), Forming a second electrode (110); and

Forming an electrically conductive structure (108) having a positive temperature coefficient,

wherein the electrically conductive structure (108) is electrically coupled to the organic functional layer structure (106) such that at least a portion of the electrical current flowing from the first electrode (104) through the organic functional layer structure (106) to the second Electrode (110) flows, flows through the electrically conductive structure (108),

Wherein the electrically conductive structure (108) is formed on or above the intermediate structure and the intermediate structure has at least one cavity such that the electrically conductive structure (108) bridges the cavity and the first electrode region and the second electrode region by means of the bridging, electrically conductive Structure (108) are electrically conductively connected,

• wherein the electrically conductive structure (108) is formed mechanically stretched such that when a further predetermined temperature or a predetermined temperature range is exceeded, the electrically conductive structure (108) breaks.

15. The method according to claim 14,

wherein the electrically conductive structure (108) is arranged as a shaped body on or above the organic functional layer structure (106).

16. Method (700) for operating an optoelectronic assembly (100, 130, 140, 150, 160), the optoelectronic assembly (100, 130, 140, 150, 160) according to claim 11,

the method comprising:

Determining (702) the electrical conductivity of the electrically conductive structure (108);

Comparing (704) the determined electrical conductivity with a predetermined conductivity, and

Adjusting (706) the heat flow (416) of the cooling unit (414) as a function of the result of the comparison.