DE102014115121A1 - Optoelectronic assembly and method for manufacturing an optoelectronic assembly - Google Patents

Abstract

In various embodiments, an optoelectronic assembly (100, 130, 140, 150, 160) is provided. The optoelectronic assembly (100, 130, 140, 150, 160) has a first electrode (104), an organic functional layer structure (106), a second electrode (110); and an electrically conductive structure (108) having a positive temperature coefficient. The organic functional layer structure (106) is electrically coupled to the first electrode (104) and the second electrode (110). The electrically conductive structure (108) is electrically coupled to the organic functional layer structure (106) such that at least a portion of the electrical current flowing from the first electrode (104) through the organic functional layer structure (106) to the second electrode (110) flows through the electrically conductive structure (108) flows.

Description

The invention relates to an optoelectronic assembly and a method for producing an optoelectronic assembly.

Organic-based optoelectronic components, so-called organic optoelectronic components, are finding widespread application. For example, organic optoelectronic components in the form of organic light-emitting diodes (OLEDs) are increasingly being used in general lighting, for example as organic surface light sources.

Illustrated in 8th is a conventional OLED 800 standing on a support 802 an anode 804 , a cathode 808 and in between an organically functional layer system 806 having.

The organic functional layer system 806 may include: one or more emitter layers in which electromagnetic radiation is generated, a charge carrier pair generation layer structure each of two or more charge generating layers (CGL) for carrier pair generation, and one or more electron block layers, also referred to as hole transport layers (HTLs), and one or more hole blocker layers, also referred to as electron transport layers (ETLs), for directing the flow of current.

In the OLED 800 in bottom-emitter construction, in which the light passes through the carrier 802 is emitted, is the anode 804 usually made of indium-tin-oxide (ITO), graphene, AZO, AlZnOx or nanowires. Due to the limited sheet resistance of the transparent anode 802 There is an uneven current and luminance distribution over the light area, especially in large-area OLED components. The uneven current and luminance distribution leads to uneven heating of the component. The uneven heating enhances the uneven current and luminance distribution and / or leads to uneven aging of the OLED component over the luminous area. In other words, organic surface light sources are subject to an aging process, which can manifest itself, for example, in a change in the light intensity or the voltage. The reason for this lies mainly in the aging of the layers of the organic functional layer system 806 , This aging depends on the temperature: the higher the temperature, for example the ambient temperature or self-heating, the faster the degradation of the organic materials and the faster the surface light source ages.

A high efficiency of the OLED for efficient energy conversion is conventionally not always possible, for example due to requirements regarding the color location of the emitted light and specifications for sometimes very high ambient temperatures, for example 105 ° C.

Homogenization of the luminous area is currently achieved essentially by supporting conductive structures in the form of electrical busbars in the luminous area. A more uniform aging over the luminous area is to be achieved by the use of a heat distribution structure (heat spreader).

Further, it is conventional to change the dimension of resistors to improve homogeneity and aging; and to reduce high ambient temperatures by active cooling, for example, using the Seebeck effect or the piezoelectric effect, which is very costly. Using other light sources, such as point light sources, is not desirable for various designs.

The anode 804 is by means of an electrical insulation 816 and the organic functional layer system 806 before a physical contact with the cathode 808 separated. Furthermore, a conventional OLED 800 also an encapsulation with a thin-film encapsulation 810 , an adhesive layer 812 and a cover 814 on to a diffusion of water into the organically functional layer system 806 to prevent. The contacting of the organic optoelectronic component 800 is conventionally by means of contact surfaces 820 in which the thin-film encapsulation 810 is open. In the contact areas 820 lies the anode 804 and the cathode 808 or one with the cathode 808 connected, electrically conductive layer 818 free.

Conventional OLED 800 that are to be used as area light source are susceptible to 3-dimensional noise, such. B. particles 822 , Particularly vulnerable in this respect are OLEDs 800 With a thin-film encapsulation 810 with different layer sequences and one by means of the adhesive layer 812 laminated thereon protective layer or cover 814 , such as Glass. Due to the usual process control, these OLED components have an increased susceptibility to damage by particles 822 For example, in the event that a mechanical pressure on the particle-loaded site is exercised. particle 822 on the cathode 808 on the order of the thickness of the cathode 808 or the thickness of the thin film encapsulation 812 , for example, with a thickness of 100 nm to 3 microns, due to the softness of the layer stack of cathode 808 and organically functional layer system 808 under pressure on the particle 822 , are pushed through this layer stack. The particle 822 or this disorder can be due to the organically functional layer system 808 to the opposite contact (anode 802 ). Thus, the particle can 822 by means of mechanical pressure the cathode 808 through the organically functional layer system 806 push and thus a physical contact 824 between the cathode 808 and the anode 804 form. This can result in a spontaneous failure of the OLED component due to the short circuit that forms. Thus, particles can 822 in a conventional OLED 800 cause an electrical short circuit during mechanical stress. The OLEDs should therefore be made more robust for use as a surface light source in order to avoid the danger of short-circuiting due to particles 822 to prevent or reduce.

At the same time the higher robustness of the OLED 800 should be more specifications of the OLED 800 not be adversely affected. Additional specifications include, for example, the (t ₀ ) IVLs (current-voltage, luminance-voltage characteristics) parameters; the efficiency, the voltage, the color of the emitted light, the lifetime, the storage stability and the mechanical robustness.

In a conventional method for increasing the robustness of an OLED 800 For example, a discretization of the luminous area and an integration of fuse elements in the OLED are used. However, this requires a very high alignment accuracy, which requires a high investment in adjustment units at the beginning of production (FE). In addition, the discretization and the integrated security elements lead to a partial loss of area of the illuminated area.

In another conventional method for increasing the robustness of an OLED 800 becomes a glass lamination with a direct lamination of a glass cover 814 on the organic functional layer system 806 used. However, there is an increased risk of particle intrusion 822 into the organically functional layer system 806 , A cavity glass encapsulation to circumvent this problem is not priced suitable for general lighting applications.

It is also known that PTC thermistors are used as external temperature protection, for example for the protection of motors.

The object of the invention is to provide an optoelectronic assembly with which an uneven current and luminance distribution and / or uneven aging of the luminous area, for example by the influence of temperature, can be prevented or reduced. Alternatively or additionally, an optoelectronic assembly with an increased robustness with respect to particles should be provided.

The object is achieved according to one aspect of the invention by an optoelectronic assembly having a first electrode, an organic functional layer structure, a second electrode; and an electrically conductive structure having a positive temperature coefficient. The organically functional layer structure is formed electrically coupled to the first electrode and the second electrode. The electrically conductive structure is electrically coupled to the organic functional layer structure such that at least a portion of the electrical current flowing from the first electrode through the organic functional layer structure to the second electrode flows through the electrically conductive structure.

Alternatively or additionally, at least a portion of an electrical current may flow from the second electrode through the organic functional layer structure to the first electrode and through the electrically conductive structure. In the event that a first current flows from the first electrode to the second electrode and a second current flows from the second electrode to the first electrode, the first current and the second current may flow with a time lag and / or different charge carriers.

The electrically conductive structure having a positive temperature coefficient is designed such, for example, from a cold conductive material and in the current path and dimension such that the electrically conductive structure has a first electrical resistance at a first temperature and has a second electrical resistance at a second temperature. The second temperature is greater than the first Temperature. The second electrical resistance is greater than the first electrical resistance. In various developments, the material of the electrically conductive structure has a transition temperature between the first temperature and the second temperature. The transition temperature may also be referred to as the Curie temperature of the material of the electrically conductive structure. Below the transition temperature, for example at the first temperature, the first electrical resistor has a value in a range, so that the electrically conductive structure is referred to as electrically conductive or electrically semiconducting or is considered such. Above the transition temperature, for example at the second temperature, the second electrical resistance has a value in a range, so that the electrically conductive structure is referred to as electrically insulating, dielectric, electrically non-conductive or paraelectric or is considered such. The second electrical resistance may, for example, be greater by a factor of 10,000 than the first electrical resistance.

In various developments, as an alternative to the electrical resistance of the electrically conductive structure, the electrical conductivity can be considered, and vice versa.

In other words, the electrically conductive structure having a positive temperature coefficient can also be referred to as a PTC thermistor or PTC resistor (positive temperature coefficient PTC) or PTC thermistor. In other words, a cold conductive resistance layer (positive temperature coefficient - PTC) can be formed between the organically functional layer structure and the second electrode. With locally increasing temperature in the organically functional layer structure, the resistance also increases locally in the cold-conducting resistance layer and thus reduces the electrical current that flows through the cold-conducting resistance layer. As a result, the brightness of the emitted light is locally reduced in a light-emitting optoelectronic assembly. During operation of the optoelectronic assembly, homogenous current injection and thus, via the luminous area, a homogenization of the luminance distribution of the emitted light over the optically active surface and / or a more uniform aging of the optoelectronic assembly can be achieved in the steady state, for example for large-area OLED components.

The electrically conductive structure may be, for example, a ferroelectric, for example a perovskite, for example a barium titanate; or comprise or be formed from a pyroelectric. The material of the electrically conductive structure having a positive temperature coefficient can also be referred to as a PTC resistor material. PTC thermistor materials for the electrically conductive structure can have transition temperatures from about 50 ° C. The transition temperature is, for example, the temperature value of the material at which the transition from a ferroelectric property to a paraelectric property takes place, for example the transition from which the material has a sudden increase in the electrical resistance. The transition temperature of the electrically conductive structure may be lower than the glass transition temperature or the melting temperature of the materials of the organic functional layer structure. As a result, for example, a short circuit in the optically active surface of the optoelectronic assembly can be electrically isolated. At a transition temperature of about 60 ° C, a temperature of, for example, about 30 ° C to about 60 ° C may be set in the organic functional layer structure.

Furthermore, the robustness can be increased by means of the electrically conductive structure in the case of flexible substrates of the optoelectronic assembly.

Furthermore, the electrically conductive structure can be used to a pure sensor application. A change in the temperature may, for example, lead to a defined regulation of the optoelectronic assembly, for example to a switching off of the optoelectronic assembly. Another sensor application is, for example, a short-circuit detection, and if necessary, a mechanical elimination of the cause of the short circuit, for example by healing the defect by means of laser.

Furthermore, by using the electrically conductive structure in the form of an embedded hybrid PTC thermistor (as functional ceramic, metal, semiconductor) in a surface light source cost-effective a temperature-dependent resistor can be installed, which reduces the current flow through the surface light source with increasing temperature. Thus, the self-heating can be reduced, for example, in a range of about 20 ° C to about 30 ° C; and the aging slows down.

According to a development, the electrically conductive structure is designed such that the electrically conductive structure is electrically conductive below a predetermined temperature and is electrically non-conductive above the predetermined temperature. In other words, above the predetermined temperature, the electrically conductive structure is dielectric and becomes with respect to the current flow from the first electrode to the second electrode (and / or vice versa) by the electrically conductive structure electrically insulating. The electrically conductive structure is therefore not above the predetermined temperature, only to a small extent or only at a high electrical voltage via the electrically conductive structure electrically conductive. The electrically conductive structure with positive temperature coefficients can therefore also be referred to as PTC thermistor, PTC resistor or PTC thermistor. The predetermined temperature may have a temperature in a range of about 50 ° C to about 150 ° C, for example, in a range of about 50 ° C to about 120 ° C, for example, in a range of about 50 ° C to about 100 ° C For example, in a range of about 50 ° C to about 80 ° C.

According to a further development, at least part of the electrically conductive structure and the organically functional layer structure are formed electrically in series with one another. As a result, the electrically conductive structure can interrupt the flow of current for at least part of the electrical current flowing through the organically functional layer structure or lead to a redirection of the current flow, for example, a change in the current intensity of a parallel current path.

According to a further development, the electrically conductive structure has physical contact at least with the first electrode, the organically functional layer structure or the second electrode. It can thereby be achieved that an exact determination of the temperature in the organically functional layer structure and / or the second electrode is possible by means of the electrically conductive structure. As a result, for example, the electrically conductive structure can be switched or switched over very precisely into an electrically non-conducting state. This allows precise protection of the organically functional layer structure, for example compared to a temperature measurement with a sensor outside the carrier or the encapsulation.

According to a further development, the electrically conductive structure is formed on or above the organically functional layer structure.

This allows a planar design of the electrically conductive structure and / or a segmentation of the optically active surface of the optoelectronic assembly.

According to a further development, the optoelectronic assembly further comprises at least one connection for electrical contacting with a module-external energy source. The electrically conductive structure is formed physically and in the current path between the at least one terminal and at least one of the first electrode, the organic functional layer structure or the second electrode.

This makes it possible to arrange the electrically conductive structure in an existing, optically inactive (edge) region of the optoelectronic assembly, for example in the case of an optically transparent assembly and an optically nontransparent electrically conductive structure. This makes it possible for an intransparent, electrically conductive structure not to change the design of the optoelectronic assembly, regardless of the transparency of the optically active surface of the optoelectronic assembly.

According to a further development, the second electrode has at least one electrode region and an electrically conductive through-contact. The electrically conductive through-contact can be electrically insulated or quasi-electrically insulated from the electrode region, for example by means of a low transverse conductivity. The electrically conductive structure is electrically conductively connected to the organically functional layer structure by means of the electrically conductive through-contact. By means of the indirect connection of the electrically conductive structure through the contact with the organically functional layer structure, the electrically conductive structure can realize a mechanical protective effect in the optoelectronic assembly. By way of example, the electrically conductive structure can form a mechanically rigid or steaming protective structure or have a bridging structure which breaks when overheated.

For example, the optoelectronic assembly may be formed in the form of a surface light element. Short-circuited areas may mean a spontaneous failure of the area light element in a surface light element. In a laterally structured, second electrode can be limited by the use of PTC thermistors, the short-circuited regions at only slightly elevated local temperature by increasing the resistance of the PTC thermistor, quasi electrically separated. Furthermore, the luminous area loss in the case of a structured, second electrode, ie in the case of a discretization of the luminous area, can be low, for example not present. The patterning of the second electrode, ie the ratio of the width of the electrode region to the width of the via or the intermediate structure (see below), can be selected such that occurring dark spots in the optically active surface of the optoelectronic assembly are not recognized by the eye. For example, the patterning of the second electrode may be selected such that dark spots have a width of less than 100 μm.

According to a development, at least part of the electrically conductive through-contact and the electrically conductive structure are formed in one piece. As a result, the electrical and thermal coupling of the via with the electrically conductive structure is simplified. This can enable a precise switching of the electrical property of the electrically conductive structure and a simple assembly of the optoelectronic assembly.

According to a further development, the second electrode has at least a first electrode region and a second electrode region. The first electrode region and the second electrode region are spaced apart by means of an intermediate structure. In other words, the second electrode may be structured. The individual electrode regions can be driven individually or electrically insulated, for example. Depending on the application, the electrode regions can be electrically insulated or electrically coupled by means of the intermediate structure. In a laterally structured, second electrode having at least two electrode regions can be limited by the use of PTC thermistors, the short-circuited regions at only slightly elevated local temperature by increasing the resistance of the PTC thermistor, quasi electrically separated.

According to a development, the electrically conductive structure is formed on or above the intermediate structure. The intermediate structure may have at least one cavity such that the electrically conductive structure bridges the cavity. The first electrode region and the second electrode region can be connected in an electrically conductive manner by means of the bridging, electrically conductive structure. By means of the electrically conductive structure having a positive temperature coefficient on a structured electrode, the robustness is increased by virtue of a short-circuit region of the optoelectronic assembly, for example in the optically active surface of a surface light source, being quasi electrically decoupled in the event of a temperature increase in the event of a short circuit.

According to a further development, the electrically conductive structure is mechanically stressed in such a way that, when a further predetermined temperature or a predetermined temperature range is exceeded, the electrically conductive structure breaks. The mechanical stress can be realized, for example, by adhering the electrically conductive structure to the second electrode. The adhesive compound causes a fixation of the electrically conductive structure. A change in temperature can lead to the occurrence of a thermally induced mechanical fracture of the electrically conductive structure. After fracture, the electrically conductive structure has at least a first region and a second region, wherein the first region is electrically insulated from the second region. The further predetermined temperature may be a temperature or the predetermined temperature range may have a temperature range in a range of about 75 ° C to about 650 ° C.

According to a further development, the optoelectronic assembly further has a heat distribution structure, wherein the heat distribution structure is thermally coupled to the electrically conductive structure. By means of the heat distribution structure, a good and / or defined heat dissipation in the event of short circuits is possible, for example in combination with a thin-film encapsulation for protecting the second electrode and / or the organically functional layer structure from the heat and / or the material of the heat distribution structure.

According to a development, the second electrode has the heat distribution structure or is designed in this way. This allows a compact design.

According to a development, the heat distribution structure has a cooling unit with a control input and a cooling contact, wherein the control input is electrically coupled to the electrically conductive structure and the cooling contact is thermally coupled at least to the organically functional layer structure such that by means of the electrical conductivity of the electrically conductive structure the cooling of at least the organically functional layer structure is adjustable by means of a heat flow of the cooling unit.

In this case, the electrically conductive structure enables sensor application and precise control of a thermally active device.

According to a further development, the optoelectronic assembly further comprises an encapsulation structure. At least the organically functional layer structure and the electrically conductive structure are hermetically sealed by means of the encapsulation structure with respect to a diffusion of a substance harmful to the organic functional layer structure, for example water and / or oxygen. This allows a compact and robust design of the optoelectronic assembly.

According to a further development, the optoelectronic assembly is designed as a surface component, for example as a surface light source and / or a display.

The object is achieved according to a further aspect of the invention by a method for producing an optoelectronic assembly. The method comprises: forming a first electrode, forming an organic functional layer structure, forming a second electrode; and forming an electrically conductive structure having a positive temperature coefficient. The organically functional layer structure is formed electrically coupled to the first electrode and the second electrode. The electrically conductive structure is electrically coupled to the organic functional layer structure such that at least a portion of the electrical current flowing from the first electrode through the organic functional layer structure to the second electrode flows through the electrically conductive structure.

By means of the electrically conductive structure, the robustness of the optoelectronic assembly can be increased compared to a spontaneous failure. Previous process systems may be used for this purpose, for example, without degrading other parameters, such as life, storage stability, t0-IVLs (current-voltage luminance-voltage characteristics) parameters (current-luminance voltage-luminance characteristics after fabrication (t0)). , the mechanical stability, the design freedom, the cost of the manufacturing process. Furthermore, conventionally used equipment / processes can be used for manufacturing, for example, thermal evaporation / plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD). Furthermore, it is possible to reduce the clean room quality or the particle purity in the plants during manufacture. As a result, the manufacturing cost can be reduced.

The optoelectronic assembly can be formed in so-called top emitter or bottom emitter design, or be formed as a transparent assembly. In a top emitter or bottom emitter design, the electrically conductive structure can be formed directly on the substrate of the optoelectronic assembly, for example after cleaning, for transparent or non-transparent surface light sources.

According to one development of the method, the electrically conductive structure is arranged as a shaped body on or above the organically functional layer structure. This allows a simple connection of the electrically conductive structure with the organic functional layer structure and / or the second electrode.

The object is achieved according to a further aspect of the invention by a method for operating an optoelectronic assembly. The optoelectronic assembly has a first electrode, an organic functional layer structure, a second electrode; and an electrically conductive structure having a positive temperature coefficient. The organically functional layer structure is electrically coupled to the first electrode and the second electrode. The electrically conductive structure is electrically coupled to the organic functional layer structure such that at least a portion of the electrical current flowing from the first electrode through the organic functional layer structure to the second electrode flows through the electrically conductive structure. Furthermore, the optoelectronic assembly has a heat distribution structure with a cooling unit, wherein the cooling unit has a control input and a cooling contact. The control input is electrically coupled to the electrically conductive structure and the cooling contact is thermally coupled at least to the organically functional layer structure such that the heat dissipation of at least the organically functional layer structure can be adjusted by means of a heat flow of the cooling unit by means of the electrical conductivity of the electrically conductive structure. The method comprises determining the electrical conductivity of the electrically conductive structure; comparing the detected electrical conductivity with a predetermined conductivity, and adjusting the heat flow of the cooling unit depending on the result of the comparison.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it:

1A a schematic sectional view of an embodiment of an optoelectronic assembly;

1B a circuit diagram of an embodiment of an optoelectronic assembly;

1C a schematic sectional view of another embodiment of an optoelectronic assembly;

1D to 1F schematic sectional view of embodiments of an optoelectronic assembly;

2A a schematic sectional view for illustrating the operation of the optoelectronic assembly according to various embodiments;

2 B and 2C Diagrams to illustrate the operation of the optoelectronic assembly according to various embodiments;

3 a flowchart for illustrating the operation of the optoelectronic assembly according to various embodiments;

4A and 4B schematic sectional view of developments of optoelectronic assemblies according to various embodiments;

4C a circuit diagram for a development of an optoelectronic assembly;

5A and 5B schematic plan views of developments of optoelectronic assemblies according to various embodiments;

6 a flow diagram of an embodiment of a method for producing an optoelectronic assembly;

7 a flowchart of an embodiment of a method for operating an optoelectronic assembly; and

8th a schematic sectional view of a conventional optoelectronic device.

In the following detailed description, reference is made to the accompanying drawings, which form a part of this specification, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the described figure (s). Because components of embodiments may be positioned in a number of different orientations, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

As used herein, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connection, direct or indirect connection, and direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

An optoelectronic assembly may have one, two or more optoelectronic assemblies. Optionally, an optoelectronic assembly can also have one, two or more electronic assemblies. An electronic module may have, for example, an active and / or a passive module. An active electronic module, for example, a computing, control and / or Control unit and / or have a transistor. A passive electronic assembly may include, for example, a capacitor, a resistor, a diode or a coil.

An optoelectronic assembly may be an electromagnetic radiation emitting assembly or an electromagnetic radiation absorbing assembly. An electromagnetic radiation absorbing assembly may be, for example, a solar cell or a photodetector. In various embodiments, an electromagnetic radiation emitting assembly may be an electromagnetic radiation emitting semiconductor component and / or a diode emitting electromagnetic radiation, a diode emitting organic electromagnetic radiation, a transistor emitting electromagnetic radiation or a transistor emitting organic electromagnetic radiation be. The radiation may, for example, be light in the visible range, UV light and / or infrared light. In this context, the electromagnetic radiation emitting assembly, for example, as a light emitting diode (LED light emitting diode) as an organic light emitting diode (organic light emitting diode, OLED), be configured as a light-emitting transistor or as an organic light-emitting transistor. The light-emitting assembly may be part of an integrated circuit in various embodiments. Furthermore, a plurality of light-emitting assemblies may be provided, for example housed in a common housing.

1A illustrates an optoelectronic assembly 100 according to various embodiments. Shown are on or above a support 102 an electrically active area 114 and an encapsulation structure 112 , The electrically active area 114 indicates: a first electrode 104 , an organic functional layer structure 106 , an electrically conductive structure 108 with a positive temperature coefficient and a second electrode 110 ,

In other words: In various developments, the organically functional layer structure is 106 on or above the first electrode 104 , the electrically conductive structure 108 on or above the organic functional layer structure 106 , and the second electrode 110 on or above the electrically conductive structure 108 educated. At least part of the electrically conductive structure 108 is with the organic functional layer structure 106 and the second electrode 110 electrically coupled in series.

For an optoelectronic module 100 as a surface light source can by means of limiting the flow of current through the electrically conductive structure 108 a destruction of the organic functional layer structure 106 be prevented. If there is a short circuit (see also 2A ) sets a defined temperature. The heat supplied may be by means of a heat distribution structure 408 (see also 4A -C) be discharged. By a hybrid embedding of an electrically conductive structure 108 with a positive temperature coefficient, for example in the form of a PTC thermistor, in the optoelectronic assembly 100 the current flow can be reduced if the temperature is too high. As a result, the brightness of the light emitted by the optoelectronic assembly can be reduced. Thus, the aging of the optoelectronic assembly can be reduced and the life can be extended.

In the following description, the optoelectronic assembly can be designed as a one-sided, two-sided or omnidirectionally light-emitting assembly. The optoelectronic assembly may be opaque, for example, reflective or transparent. The first electrode 104 may be at least partially transparent or opaque, for example, reflective. Analogously, the electrically conductive structure 108 and / or the second electrode 110 each at least partially transparent or opaque, for example, be designed to be reflective.

The electrically active area 114 is designed to emit an electromagnetic radiation from a provided electrical energy. Alternatively or additionally, the electrically active region 114 for generating an electric current and / or an electrical voltage from a provided electromagnetic radiation. The optoelectronic assembly 100 can be designed as a surface component, for example as a surface light source and / or a display. Alternatively or additionally, the optoelectronic assembly 100 at least one organic light emitting diode or is formed.

In other words: the optoelectronic assembly 100 , has a first electrode 104 , an organic functional layer structure 106 , a second electrode 110 ; and an electrically conductive structure 108 with a positive temperature coefficient. The organic functional layer structure 106 can be electrically coupled to the first electrode 104 and the second electrode 110 be educated. The electrically conductive structure 108 may be formed on or over the organic functional layer structure and such with the organic functional layer structure 106 be electrically coupled, that at least a portion of the electric current from the first electrode 104 through the organic functional layer structure 106 to the second electrode 110 flows through the electrically conductive structure 108 flows.

The electrically conductive structure 108 with a positive temperature coefficient can also be referred to as a PTC thermistor or PTC resistor (positive temperature coefficient - PTC) or PTC thermistor. In other words, between the organic functional layer structure 106 and the second electrode 110 can be an additional, cold conductive resistance layer 108 be formed (positive temperature coefficient - PTC). At locally increasing temperature in the organic functional layer structure 106 The resistance also increases locally in the cold conductive resistance layer 108 and thus reduces the through the cold conductive resistance layer 108 consuming electric current. This is in a light-emitting, optoelectronic assembly 100 locally reduces the brightness of the emitted light. During operation of the optoelectronic module 100 In the steady state, therefore, a homogeneous current injection and, associated therewith, via the luminous area, a homogenization of the luminance distribution of the emitted light over the optically active area and / or a more uniform aging of the optoelectronic assembly 100 be achieved, for example, for large-area OLED components.

The transition temperature of the electrically conductive structure 108 may be lower than the glass transition temperature or the melting temperature of the materials of the organic functional layer structure. As a result, for example, a short circuit in the optically active surface of the optoelectronic assembly 100 be electrically isolated. For example, at a transition temperature of about 50 ° C, a temperature of, for example, about 30 ° C to about 50 ° C may be set in the organic functional layer structure.

Furthermore, by means of the electrically conductive structure 108 with a flexible carrier 102 the optoelectronic assembly 100 the robustness can be increased.

Furthermore, the electrically conductive structure 108 be used for a pure sensor application. A change in the temperature can, for example, to a defined rules of the optoelectronic assembly 100 lead, for example, to turn off the optoelectronic assembly 100 , Another sensor application is, for example, a short-circuit detection, and if necessary, a mechanical elimination of the cause of the short circuit, for example by healing the defect by means of laser.

The electrically conductive structure 108 may be formed such that the electrically conductive structure is electrically conductive below a predetermined temperature and above the predetermined temperature is electrically non-conductive. For example, the predetermined temperature may have a temperature in a range of about 60 ° C to about 150 ° C. The predetermined temperature should be less than a glass transition temperature or a melting temperature of a material of the organic functional layer structure 106 , For example, lower than the glass transition temperature or the melting temperature of the material of the organic functional layer structure 106 with the lowest glass transition temperature or melting temperature of the organic functional layer structure 106 ,

The electrically conductive structure 108 is formed to have an electrical resistance, for example, at RT: in a range of about 0.1 Ω to about 0.5 Ω; at 80 ° C: in a range of about 5 Ω to about 15 Ω; at 100 ° C: in a range of about 20 Ω to about 200 Ω; at 120 ° C: in a range from about 200 Ω to about 1000 Ω and / or at 600 ° C: a value greater than about 1 kΩ.

In various developments, the electrically conductive structure 108 flat on or above the organically functional layered structure 106 educated. Alternatively or additionally, the optoelectronic assembly 100 an optically active region and an optically inactive region, wherein at least the organic functional layer structure 106 and the electrically conductive structure 108 at least in the optically active area are formed nationwide. Alternatively or additionally, the organic functional layer structure 106 and the electrically conductive structure 108 formed essentially congruent.

In various developments is the optoelectronic assembly 100 formed light-emitting, wherein the electrically conductive structure 108 at least for a wavelength range of the emitted light is at least translucent.

In various developments, at least part of the electrically conductive structure 108 and the organic functional layer structure 106 mutually electrically formed in series.

In various developments, the electrically conductive structure 108 with the organic functional layer structure 106 and / or the second electrode 110 thermally coupled. Alternatively or additionally, at least part of the electrically conductive structure 108 and the organic functional layer structure 106 thermally formed parallel to each other.

In various developments, the electrically conductive structure 108 with the organic functional layer structure 106 and / or the second electrode 110 a physical contact.

In various developments, the electrically conductive structure 108 a ferroelectric, for example, a perovskite, or a pyroelectric, or is formed therefrom. In various developments, the electrically conductive structure 108 at least one of the following materials: barium titanate (BaTiO ₃ , BTO); Lead zirconate titanate (Pb (Zr _x Ti _1-x ) O ₃ ; PZT); Strontium bismuth tantalate (SrBi ₂ Ta ₂ O ₉ ; SET); Bismuth titanate (Bi ₄ Ti ₃ O ₁₂ ; BIT); Bismuth lanthanum titanate (Bi _4-x La _x Ti ₃ O ₁₂ ; BLT); Bismuth titanate niobate (Bi ₃ TiNbO ₉ ; BTN); Strontium titanate (SrTiO ₃ ; STO); Barium strontium titanate (Ba _x Sr _1-x TiO ₃ ; BST); Sodium nitrite (NaNO ₂ ); Lithium niobate (LiNbO ₃ ); Potassium sodium tartrate tetrahydrate (KNaC ₄ H ₄ O ₆ .4H ₂ O; Seignette salt); a hexagonal manganate (RMnO ₃ with R = Y, Sc, In, Ho, Er, Tm, Yb, Lu); 1,1-di (carboxymethyl) cyclohexane; Triglycine sulfate ((CH ₂ NH ₂ COOH) ₃ .H ₂ SO ₄ ; TGS); Polyvinylidene fluoride (PVDF), poly (vinylidene fluoride-trifluoroethylene) P (VDF-TrFE), platinum, carbon black-filled polymers, for example polymer sponges.

In a further development, the electrically conductive structure 108 n-doped silicon on or is formed therefrom. This is approximately a doubling of the electrical resistance of the electrically conductive structure 108 when the temperature increases from about 20 ° C to about 100 ° C.

In various developments, the electrically conductive structure 108 a matrix and particles, wherein the particles are distributed in the matrix. The matrix may be formed from an electrically conductive material, for example at least one electrically conductive polymer. The particles may comprise a material having positive temperature coefficients, as described in more detail above. In other words: the electrically conductive structure 108 may comprise electrically cold conductive particles in an electrically conductive matrix. As a result, the electrically conductive structure can be formed in any geometrically complex shape, for example organic form.

In various developments, the electrically conductive structure 108 Two or more different materials with positive temperature coefficients. In other words: the electrically conductive structure 108 may have a mixture of cold conductive materials.

This allows the transition temperature at which the electrically conductive structure 108 paraelectric is set, for example, with respect to at least one operating parameter of the optoelectronic assembly 100 and / or with respect to at least one material of the organic functional layer structure 106 ,

For example, in barium titanate alloys, substitution of barium with lead for an increase and addition of strontium results in a lowering of the Curie temperature and hence the PTC effect. By means of mixing strontium into BaTiO ₃ , the transition temperature, ie the Curie temperature, can be adjusted in the application-specific temperature range, for example to a temperature in a temperature range from about -40 ° C to about 120 ° C.

In various developments, the electrical resistance of the electrically conductive structure 108 by means of the geometric dimension and / or the material of the electrically conductive structure 108 be set as illustrated in Table 1, for example. Table 1: material Thickness / mm Width (mm Length / mm T / ° C Resistance (calculated) / Ω al 0.00015 1 0.001 300 0.18 BaTiOx 1 4 0.00005 300 12.5 BaTiOx 1 2 0.0002 450 1 m BaTiOx 2 2 0.000001 300 0.25 BaTiOx 2 2 0.000001 450 2,5 k

The electrically conductive structure 108 may, for example, have the electrical resistance shown in Table 1 for given material, the dimension and the temperature.

In various developments, the electrically conductive structure 108 a transition temperature greater than about 60 ° C. An electrically conductive structure 108 can be used to a quasi complete shutdown of the optoelectronic assembly or segments thereof, for example by the electrically conductive structure 108 comprises or is formed from a ceramic mentioned above.

By means of a mixture of functional ceramics described above is in various developments an adjustment to a certain transition temperature of the electrically conductive structure 108 possible. For example, for applications in the automotive sector with a maximum allowable temperature of the optoelectronic assembly of 105 ° C, setting the transition temperature of the electrically conductive structure 108 for example, 95 ° C possible.

Thus, the customer requirement for high temperatures can be reduced, since a built-in self-protection by means of the integration of the electrically conductive structure 108 can be realized in the optoelectronic assembly.

In various developments, the electrically conductive structure 108 formed such that the refractive index of the electrically conductive structure 108 for at least one wavelength range of electromagnetic radiation and / or changes in at least one direction with the temperature. For example, the electrically conductive structure 108 be formed such that the electrically conductive structure 108 is transparent or isotropic below the transition temperature, and is translucent or anisotropic above the transition temperature. As a result, a temperature distribution and / or a short-circuit region can optically act as a sensor application by means of the electrically conductive structure 108 be determined. For example, by means of the color or the degree of turbidity in a region of the electrically conductive structure 108 the temperature of the area can be determined. Alternatively or additionally, that of the electrically conductive structure 108 be formed such that the temperature change or the temperature distribution in the electrically conductive structure 108 can be determined in the non-visible wavelength range.

In various developments, the electrically conductive structure 108 a thickness in a range of about 100 nm to about 100 μm, for example in a range of about 200 nm to about 50 μm, for example in a range of about 0.2 μm to about 1 μm, for example in a range of about 10 μm to about 100 μm

The electrically active area 114 is by means of the encapsulation structure 112 hermetically sealed with respect to a diffusion of at least one substance that is suitable for the electrically active region 114 is harmful, for example, water, sulfur, oxygen and / or their compound. In other words, in various developments, the optoelectronic assembly 100 an encapsulation structure 112 wherein at least the organically functional layer structure 106 and the electrically conductive structure 108 by means of the encapsulation structure 112 hermetically sealed with respect to an in-diffusion of the organically functional layer structure 106 harmful substance, such as water, sulfur and / or oxygen. In other words, an optically active structure with a first electrode 104 , organically functional layer structure 106 and second electrode 110 ; is together with an electrically conductive structure 108 encapsulated with positive temperature coefficients. The optically active structure and the electrically conductive structure 108 are thus monolithically integrated in the optoelectronic assembly 100 educated. The encapsulation structure 112 surrounds the electrically active area 114 at least in part, and will be more detailed in 4 described.

A hermetic water and / or oxygen-tight encapsulation structure 112 is understood to be a substantially hermetically dense structure. For example, a hermetically sealed structure may have a diffusion rate with respect to water and / or oxygen of less than about 10 ^-1 g / (m ² d), a hermetically sealed cover and / or a hermetically sealed support may include a diffusion rate with respect to water and / or or oxygen of less than about 10 ^-4 g / (m ² d), for example, in a range of about 10 ^-4 g / (m ² d) to about 10 ^-10 g / (m ² d), for example in a range of about 10 ^-4 g / (m ² d) to about 10 ^-6 g / (m ² d).

In various embodiments, a hermetically sealed substance or a hermetically sealed mixture of substances may comprise or be formed from a ceramic, a metal and / or a metal oxide.

The optoelectronic assembly 100 can as a through the first electrode 104 be formed light emitting device. Alternatively or additionally, the optoelectronic assembly 100 as a transparent, light-emitting component and / or through a second electrode 110 be formed light emitting device.

The carrier 102 For example, it is designed as a foil or a metal sheet. Alternatively or additionally, the carrier 102 a glass or a plastic on or is formed from it. The carrier 102 may be electrically conductive, for example as a metal foil or a glass or plastic carrier with a conductor structure. The carrier 102 comprises glass, quartz, and / or a semiconductor material or is formed therefrom. Alternatively or additionally, the substrate 102 a plastic film or a laminate with one or more plastic films or is formed therefrom. The carrier 102 may be transparent with respect to that of the optoelectronic assembly 100 absorbed and / or emitted light.

In various developments is the carrier 102 mechanically flexible, for example, bendable, bendable or formable. For example, the carrier 102 set up as a foil or sheet. Alternatively or additionally, the carrier 102 at least one mechanically rigid, non-flexible region.

The first electrode 104 and / or the second electrode 110 can be electrically conductive with an electrically conductive support 102 be connected. As a result, for example, a contacting of the first electrode 104 and / or the second electrode 110 through the carrier 102 done, which is the contacting of the optoelectronic assembly 100 simplified.

The first electrode 104 may be reflective, for example, for an optoelectronic assembly 100 in top emitter construction. Alternatively, the first electrode 104 transparent with respect to the organic functional layer structure 106 emitted and / or absorbed light formed, for example, for a transparent optoelectronic assembly 100 or a bottom-emitter optoelectronic assembly.

The first electrode 104 has an electrically conductive material, for example a metal. Alternatively or additionally, the first electrode 106 a transparent conductive oxide of one of the following materials: for example, metal oxides: for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). The first electrode has a layer thickness in the range from a monolayer to 500 nm, for example from less than 25 nm to 250 nm, for example from 50 nm to 100 nm.

The organic functional layer structure 106 is designed to emit a light from a supplied electrical energy. Alternatively or additionally, the organically functional layer structure 106 formed to generate an electric energy from an absorbed light. The organic functional layer structure 106 has a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer, and an electron injection layer. The layers of the organic functional layer structure 106 are between the electrodes 104 . 110 arranged such that in operation electrical charge carriers from the first electrode 104 through the organic functional layer structure 106 through into the second electrode 110 can flow, and vice versa.

The second electrode 110 can be transparent regarding the organic functional layer structure 106 be formed emitted and / or absorbed light.

The first electrode 104 and the second electrode 110 can be the same or different. The second electrode 110 is formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is, as an electron-injecting electrode.

1B illustrates an equivalent circuit diagram of the electrically active region 114 an optoelectronic assembly which is substantially identical to that in 1A represented optoelectronic assembly 100 ,

Furthermore shown in 1B are electrical connections 118 . 120 to electrically contact the optoelectronic assembly with a module external electrical energy source.

Shown are a first connection 118 , the first electrode in the form of a resistor 104 , the organic functional layer structure 106 in the form of a diode structure, for example a light-emitting diode, the electrically conductive structure 108 with positive temperature coefficients with the equivalent circuit of a PTC resistor; the second electrode 110 in the form of an electrical resistance and a second connection 120 ,

The first electrode 104 is by means of a first electrical contact with the first impulse 118 electrically coupled and by means of a second electrical contact with an anode contact of the organic functional layer structure 106 electrically coupled.

By means of a cathode contact is the organically functional layer structure 106 furthermore with a first electrical contact of the electrically conductive structure 108 (PTC resistor) electrically coupled.

Furthermore, electrically conductive structure 108 by means of a second electrical contact with a first electrical contact of the second electrode 110 electrically coupled.

Furthermore, the second electrode 110 by means of a second electrical contact with the second terminal 120 electrically coupled.

The optoelectronic assembly 100 In various embodiments, it is designed in such a way that an electric current for operating the optoelectronic assembly 100 from the first port 118 through the first electrode 104 , through the organic functional layer structure 106 and through the second electrode 108 to the second port 120 flows (and / or vice versa), wherein at least a portion of the electrical current through the electrically conductive structure 108 flows with positive temperature coefficients. In other words, the electrically conductive structure 108 and the organic functional layer structure 106 are regarding the connections 118 . 120 the optoelectronic assembly formed at least partially electrically connected in series or in series.

In other words:
At the first connection 118 that with the first electrode 104 is connected, a first electrical potential can be applied. The first electrical potential is provided by a device-external power source, such as a power source or a voltage source. Alternatively, the first electrical potential is applied to an electrically conductive carrier 102 applied and the first electrode 104 through the carrier 102 indirectly supplied electrically. Alternatively, the carrier 102 as the first electrode 104 educated. The first electrical potential is, for example, the ground potential or another predetermined reference potential.

To the second connection 120 that with the second electrode 110 is connected, a second electrical potential can be applied. The second electrical potential is provided by the same or a different energy source as the first electrical potential. The second electrical potential is different from the first electrical potential. For example, the second electric potential has a value such that the difference from the first electric potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15V, for example, a value in a range of about 3V to about 12V.

1C illustrates an optoelectronic assembly 130 according to various embodiments. In the 1C illustrated optoelectronic assembly 130 may be substantially identical to one of the embodiments of an optoelectronic assembly shown above 100 be educated. Continue in 1C is shown that the electrically conductive structure 108 with positive temperature coefficients on the second electrode 110 may be formed and by means of electrical vias 116 with the organic functional layer structure 106 electrically conductive is connected.

In other words: In various developments, the organically functional layer structure is 106 on or above the first electrode 104 , the second electrode 110 on or above the organic functional layer structure 106 , and the electrically conductive structure 108 on or over the second electrode 110 educated. At least part of the electrically conductive structure 108 is with the organic functional layer structure 106 and the second electrode 110 electrically coupled in series. In the in 1C illustrated optoelectronic assembly 130 is the electrically conductive structure 108 with positive temperature coefficients by means of at least one contact 116 at least partially in electrical series with the organically functional layered structure 106 educated.

In other words, in various developments, the second electrode 110 at least one electrode region and an electrically conductive through-contact 116 on. The electrically conductive through contact 116 may be electrically isolated from the electrode area. The electrically conductive structure 108 can by means of at least one electrically conductive via 116 with the organic functional layer structure 106 be electrically conductive connected.

In various developments, the electrically conductive through contact 116 and the electrically conductive structure 108 a similar material or are formed from it. For example, at least part of the electrically conductive through-contact 116 and the electrical conductive structure 108 formed from one piece. Alternatively or additionally, the material of the electrically conductive through contact 116 and the material of the electrically conductive structure 108 different temperature coefficients.

In various developments, at least one electrode (illustrated in FIG 1C the second electrode 110 ) formed laterally structured, so that the structured electrode has electrically insulated electrode regions from each other. In various developments, an electrically conductive structure 108 with positive temperature coefficients on a structured, second electrode 110 and / or below a structured, first electrode 104 be educated. In various developments, the electrode 104 at least a first electrode region and a second electrode region. In various developments, the first electrode 104 structured formed, ie blowing at least two electrode areas, and the second electrode 110 is unstructured. In various developments are the first electrode 104 and the second electrode 110 structured formed. In other words, the first electrode 108 has at least a first electrode region and a second electrode region, and the second electrode 110 has at least a first electrode region and a second electrode region. The first electrode 104 and the second electrode 110 may each have an intermediate structure between the first electrode region and the second electrode region. In various developments, the intermediate structure of the first electrode 104 to the intermediate structure of the second electrode 110 shifted, ie the intermediate structures are not directly opposite or have each other a lateral offset. Such structuring may be advantageous, depending on where a possible short circuit occurs.

The lateral distance between the first electrode region and the second electrode region of the first electrode and / or second electrode should, taking advantage of the low conductivity of the organic functional layer structure 106 , no or only a small electrical cross-flow within the organically functional layer structure 106 available.

In various developments at least one electrode 104 . 110 structured formed based on their thermal (transverse) conductivity. Such structuring may be necessary, for example, in the case that the thermal conductivity of the material of the electrode is so high that the temperature increase or heat would be transported laterally faster, and thus could damage the organically functional layer structure, as the electrically conductive structure 108 takes time to switch to the paraelectric state. Alternatively or additionally, such a structuring may be necessary in the event that the thermal conductivity of the material of the electrode is so high that the temperature increase or heat would be further transported, and thus could damage the organically functional layer structure, as the local area the electrically conductive structure 108 switching to the paraelectric state.

In various developments, at least one electrode region of a structured first electrode and / or a structured second electrode has an area, for example, in a range of approximately 1 mm ² to approximately 100 mm ² , for example in a range of approximately 2 mm ² to approximately 25 mm ² For example, in a range of about 5 mm ² to about 10 mm ² .

1D illustrates an optoelectronic assembly 140 according to various embodiments. In the 1D illustrated optoelectronic assembly 140 may be formed substantially identical to one of the embodiments of an optoelectronic assembly shown above. Continue in 1D is shown that the electrically conductive structure 108 in various developments on the first electrode 104 , and the organic functional layer structure 106 on the electrically conductive structure 108 can be trained.

This allows the electrically conductive structure 108 in the substrate process above the carrier 102 , for example on the first electrode 104 be applied, ie even before the organic functional layer structure is formed. As a result, in the method for forming the electrically conductive structures 108 higher temperatures and other processes are allowed than in forming the electrically conductive structure on or over the organic functional layer structure. For example, the electrically conductive structure may be possible by means of sputtering, or bonding, for example with a thermally and / or electrically conductive adhesive. Furthermore, the substrate process sinters the material of the electrically conductive structure 108 at elevated temperatures, for example at 600 ° C. Suitable materials include, for example, (Sr) barium titanate, nickel manganate, strontium titanate, n-doped Si; Metals, for example Pt.

Furthermore, by means of the integration of the electrically conductive structure 108 in which the optoelectronic assembly enables a cost effective method by reducing the number of external wirings. Furthermore, the current reduction is prolonged by the electrically conductive structure 108 at elevated temperature the life.

The described method is essentially applicable to all available dimmable bulbs, such as LEDs; and is tolerant to deviations in production.

1E illustrates an optoelectronic assembly 150 according to various embodiments. In the 1E illustrated optoelectronic assembly 150 may be formed substantially identical to one of the embodiments of an optoelectronic assembly shown above. Continue in 1E is shown that the electrically conductive structure 108 can be structured and can act as an electrical connection structure, for example, between the first electrode 104 and the first connection 118 , In this example, the electrically conductive structure 108 against direct physical and electrical contact with the organically functional layered structure 106 and / or the second electrode 110 protected, for example by means of a resist (not illustrated) and / or the encapsulation structure 112 , In this example, the electrically conductive structure 108 also in the substrate process above the carrier 102 , for example on the first electrode 104 be applied.

1F illustrates an optoelectronic assembly 160 according to various embodiments. In the 1F illustrated optoelectronic assembly 160 may be formed substantially identical to one of the embodiments of an optoelectronic assembly shown above. Continue in 1E is shown that the electrically conductive structure 108 can be structured and can act as an electrical connection structure, for example, between the second electrode 110 and the second port 120 , In this example, the electrically conductive structure 108 against direct physical and electrical contact with the organically functional layered structure 106 and / or the first electrode 104 protected, for example by means of a resist (not illustrated) and / or the encapsulation structure 112 , In various refinements, it is important that the contact area between the electrically conductive structure 108 and the physically connected electrode 104 . 110 or organically functional layer structure is defined. The contact surface should not depend on the adjustment of the individual layers of the optoelectronic assembly to each other. As a result, an always the same resistance behavior of the electrically conductive structure can be ensured.

Functional ceramics for the electrically conductive structure 108 , can be trimmed by laser adjustment (analogous to the resistance of thick film technology). The functional ceramic is inside the encapsulation 112 protected.

2A illustrates the operating principle of an optoelectronic assembly 200 with electrically conductive structure 108 with a positive temperature coefficient. In the 2A illustrated optoelectronic assembly 200 is substantially identical to one of the above-described embodiments of an optoelectronic assembly. Also shown is a structured, second electrode with at least two electrode regions arranged next to one another. Between the electrode areas is an intermediate structure, for example, with a cavity. Alternatively or additionally, the intermediate structure has a through contact 116 on. The electrically conductive structure 108 can by means of the contact 116 with the organic functional layer structure 106 be electrically connected. Alternatively or additionally, the electrode regions are by means of the electrically conductive structure 108 connected electrically conductive.

Also shown is a particle 202 when making the optoelectronic assembly 200 For example, in producing the organic functional layer structure 106 or in forming the second electrode 110 , into the optoelectronic assembly 100 could have come. The particle 202 has an influence on the electrical properties in one area 204 the optoelectronic assembly 100 ,

If a short circuit occurs in an electrode area (illustrated in 2A as a short circuit area 204 ), this area heats up, for example due to ohmic loss. Heating leads to an increase in the electrical resistance in a PTC thermistor, ie to an increase in the electrical resistance of the electrically conductive structure 108 , for example by a factor of 10000. The increase in the electrical resistance of the electrically conductive structure 108 causes no electric current through the short-circuit area anymore 204 can flow.

2 B 1 illustrates a diagram of a calculation example for an optoelectronic assembly with an electrically conductive structure.

In the diagram 220 is the brightness 210 in Cd / m2 of the light emitted by an optoelectronic assembly according to various embodiments as a function of temperature 208 in ° C of the optoelectronic assembly for three examples 212 . 214 . 216 of electrically conductive structures 108 illustrated with different geometrical dimensions. The brightness 210 may alternatively be referred to as luminance.

In a first example 212 has the electrically conductive structure 108 a dimension of 2 mm × 2 mm × 0.001 mm. In a second example 214 has the electrically conductive structure 108 a dimension of 1 mm × 1 mm × 0.001 mm. In a third example 216 has the electrically conductive structure 108 a dimension of 2 mm × 10 mm × 0.001 mm.

The electrically conductive structure 108 is in the examples 212 . 214 . 216 each formed of the same material as a PTC thermistor with 20% SrTiBaO ₃ .

For the calculation, it was assumed that essentially only the electrical resistance of the electrically conductive structure is temperature-dependent. The control takes place at a constant operating current. At constant operating current, an unstable equilibrium can be set. The optoelectronic assembly has an optically active area of approximately 46 cm ² for the calculation example. The brightness of the emitted light at 20 ° C is approximately 3300 Cd / m2.

From the course of the determined brightnesses 210 the three examples 212 . 214 . 216 at different temperatures 208 is a decrease in brightness to higher temperatures in series connection of the PTC thermistor with the OLED to see. It is from the comparison of the courses of the examples 212 . 214 . 216 It can be seen that the onset of brightness adjustment by a dimensional change of the electrically conductive structure 108 can be adjusted. Adjusting the dimension of the electrically conductive structure 108 is possible for example by means of a laser cutting (laser trimming).

An even better adaptation of the use of the electrically conductive structure 108 is possible by means of the composition of the PTC thermistor (not shown).

2C 1 illustrates in a diagram a calculation example for production tolerance for an optoelectronic assembly with an electrically conductive structure.

In the diagram 230 is the brightness 210 in Cd / m2 of the light emitted by an optoelectronic assembly according to various embodiments as a function of temperature 208 in ° C of the optoelectronic assembly for three examples 222 . 224 . 226 of electrically conductive structures 108 illustrated with different geometrical dimensions.

In the production of the electrically conductive structure 108 For example, a tolerance of about 5% is acceptable. Thus, in the first example 212 out 2 B the lateral deviation 100 μm and the layer thickness deviations are 50 nm. By way of illustration is in 2C the brightness 210 as a function of temperature 208 for the first example, a fourth example 224 and a fifth example 226 illustrated. In the fourth 224 has the electrically conductive structure 108 a dimension of 1.9 mm × 1.9 mm × 0.001 m. In the fifth example 226 has the electrically conductive structure 108 a dimension of 2 mm × 2 mm × 0.00105 mm. The electrically conductive structure 108 is in the examples 212 . 224 . 226 each formed of the same material as a PTC thermistor with 20% SrTiBaO ₃ .

The error or deviations in the dimensions of the electrically conductive structure are the smaller, the larger the electrically conductive structure 108 in their dimensions.

For the calculation of 2C was like in 2 B it is assumed that essentially only the electrical resistance of the electrically conductive structure is temperature-dependent. The control takes place at a constant operating current. The optoelectronic assembly includes an optically active area of about 46 cm ² for the calculation example. The brightness of the emitted light at 20 ° C is about 3300 Cd / m ² .

Out 2C It can be seen that at a conventional tolerance of 5% in manufacturing, in an optoelectronic assembly with integrated electrically conductive structure 108 the brightness 210 only marginal changes.

3 illustrates a flowchart 300 showing the effect of the electrically conductive structure 106 in an optoelectronic assembly to illustrate, wherein the optoelectronic assembly is substantially identical to one of the above-described embodiments of an optoelectronic assembly.

In one area 204 (Step 302 ) (illustrated as a short circuit area 204 in 2 ) due to a particle 202 an electrical short circuit.

In the short circuit area 204 it comes (step 304 ) to a strong increase in temperature, for example, such that the temperature T of the short-circuit region 204 higher than the Curie temperature Tc (also referred to as the transition temperature) of the material of the electrically conductive structure 108 is.

Due to the temperature increase, the electrically conductive structure 108 (Step 306 ) high impedance. The electrically conductive structure 108 prevented by the short circuit area 204 a current flow.

This can (step 308 ) to a cooling of the short circuit area 204 to a temperature below the Curie temperature of the electrically conductive structure 108 to lead.

The further course of the current flow in the short circuit area 204 depends on it (step 310 ), whether the short circuit is reversible or irreversible.

A short circuit can occur, for example, due to particle contamination and mechanical stress on the particle contamination area. In this case, the short circuits are essentially irreversible because of the particle 202 under mechanical load, the second electrode 110 through the organic functional layer structure 106 on the first electrode 104 pushed through (see 7 ).

If the short circuit still exists, it will happen (step 312 ) to a self-adjustment of a mean temperature at the short circuit area 204 below the Curie temperature of the electrically conductive structure 108 , for example, below the temperature at which the organically functional layered structure 106 is damaged. A static dark spot is formed.

The high resistance of the electrically conductive structure 108 with positive temperature coefficients is reduced at temperatures below the Curie temperature. Depending on the response time of the electrically conductive structure 108 with positive temperature coefficients, for example 5 s, the short circuit can occur again.

The electrically conductive structure 108 causes a current limit, so that (step 314 ) due to the still increased lead resistance, the optoelectronic module in the short circuit area 204 still be functional. In the short circuit area 204 the temperature may therefore be elevated locally. The temperature control, ie the heat dissipation, can be defined by further layer materials, for example via a heat distribution structure, which is described in more detail below (see 4A , B).

However, a short circuit can also be reversible, meaning that it will no longer be available after a while. For example, the particle 202 and / or the short circuit area 204 burned out. Alternatively or additionally, for example, the electrically conductive structure 108 At high temperatures, (T> Tc) break up by means of thermal stress and thus the short circuit range 204 electrically isolate. In this case, the optoelectronic assembly (step 316 ) with small perturbation in the form of a static dark spot in the optically active area.

As an alternative to a short circuit, the temperature increase can also be locally caused by a different current injection into the organically functional layer structure 106 respectively. In this case, the electrically conductive structure is homogenized 108 the current distribution laterally in the optoelectronic assembly 100 ,

4A FIG. 2 illustrates an optoelectronic assembly that is substantially identical to one of the above-described embodiments of an optoelectronic assembly, for example, substantially identical to that in FIG 1A illustrated optoelectronic assembly. Furthermore shown in 4A is a heat distribution structure 408 between the second electrode 110 and the electrically conductive structure 108 is provided. The heat distribution structure 408 is to heat or dissipate and / or distribute heat of the electrically conductive structure 108 set up.

In other words, in various developments, the optoelectronic assembly 100 a heat distribution structure 408 on. The heat distribution structure 408 can with the electrically conductive structure 108 be formed thermally coupled. In various developments, the heat distribution structure 408 on or above the organic functional layer structure 106 and / or the electrically conductive structure 108 is trained.

By means of the heat distribution structure 408 a defined heat conduction or heat storage can be achieved. Thus, in conjunction with the discretization of the second electrode, ie the size of the electrode regions of the second electrode or the cell size, a defined temperature can be set or formed in the event of a permanent, for example irreversible, short circuit. In this area, the electrically conductive structure 108 work in the self-regulation area. This allows the optoelectronic assembly 100 can continue to operate, although a short circuit is still present.

The heat distribution structure 408 For example, as a heat-conducting foil. The heat distribution structure 408 may have a heat-conducting layer or be formed of a thermally conductive material. A heat-conducting structure can be understood as having as its product its thickness d and its thermal conductivity k a value greater than approximately 1000 μW / K, for example greater than approximately 5000 μW / K, for example greater than approximately 20000 μW / K. For example, the thickness of the layer may be less than about 10 mm, for example, less than about 2 mm, for example, less than about 100 μm. A heat-conducting structure may comprise, for example, a graphene layer, for example a graphene-coated film, for example an aluminum foil, copper foil or a foil coated with aluminum or copper.

The heat distribution structure 408 may include or be formed from one of the following materials: a metal or a metal alloy, for example, Cu, Ag, Au, Pt, Pd, Al; SiC, an AlN, a paraffin.

In various developments, the second electrode 110 as a heat distribution structure 408 trained or has such.

In various developments are the organic functional layer structure 106 and the electrically conductive structure 108 by means of the encapsulation structure 112 monolithically integrated. 4A further illustrates an embodiment of an encapsulation structure 112 , wherein the encapsulation structure 112 a thin film encapsulation 402 , an adhesive layer 404 and a cover 406 can have.

By means of the encapsulation structure 112 become the first electrode 104 , the organic functional layer structure 106 and the second electrode 110 protected against ingress of a harmful substance. In other words: the encapsulation structure 112 is hermetically sealed with respect to diffusion of water and / or oxygen through the encapsulation structure 112 into the organically functional layered structure 106 educated. The encapsulation structure has, for example, a barrier thin layer 402 , a decoupling layer, a bonding layer 404 , a getter and / or a cover 406 on.

The barrier thin film 402 comprises or is formed from one of the following materials: alumina, zinc oxide, zirconia, titania, hafnia, tantala, lanthania, silica, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and alloys thereof.

The input / outcoupling layer has a matrix and scattering centers with respect to the electromagnetic radiation distributed therein, wherein the mean refractive index of the input / outcoupling layer is greater or smaller than the mean refractive index of the layer from which the electromagnetic radiation is provided. In addition, one or more antireflection layers (for example combined with the second barrier thin layer) may additionally be present in the organic optoelectronic component 300 be provided.

The connection layer 404 is made of an adhesive or a varnish. In one development, a connecting layer made of a transparent material has particles which scatter electromagnetic radiation, for example light-scattering particles. As a result, the connecting layer acts as a scattering layer, which leads to an improvement in the color angle distortion and the coupling-out efficiency.

In a development is between the second electrode 110 and the tie layer 404 an electrically insulating layer (not shown) is formed, for example, SiN, for example, with a layer thickness in a range of about 300 nm to about 1.5 microns, for example, with a layer thickness in a range of about 500 nm to about 1 micron to electrically to protect unstable materials, for example during a wet-chemical process.

In various developments, the electrically conductive structure 108 set up as an adhesive layer.

In various developments, the connection layer 404 the electrically conductive structure 108 on.

The layer of getter comprises or is formed from a material that absorbs and binds substances that are detrimental to the electrically active region, such as water vapor and / or oxygen. For example, a getter comprises or is formed from a zeolite derivative. The layer with getter has a layer thickness of greater than about 1 .mu.m, for example, a layer thickness of several microns.

On or above the tie layer 404 is the cover 406 trained or arranged. The cover 406 is by means of the bonding layer 404 with the electrically active area 114 connected and protects it from harmful substances. The cover 406 For example, a glass cover, a metal foil cover or a sealed plastic film cover. The glass cover is connected, for example, by means of a frit bonding / glass soldering / seal glass bonding using a conventional glass solder in the geometric edge regions of the organic optoelectronic component.

4B FIG. 2 illustrates an optoelectronic assembly which is substantially identical to one of the above-described embodiment of an optoelectronic assembly, for example substantially identical to that in FIG 1C or 4A illustrated optoelectronic assembly. 4B further illustrates that the heat distribution structure 408 in various developments a physical contact with the electrically conductive structure 108 and the second electrode 110 may be free from physical contact with the heat distribution structure 408 , For example, the electrically conductive structure 108 on or over the second electrode 110 formed and by means of vias 116 with the organic functional layer structure 106 electrically connected. The heat distribution structure 408 is on or above the electrically conductive structure 108 trained and thermally coupled with this.

In various developments, the heat distribution structure 408 electrically conductive formed. For example, the heat distribution structure 408 electrically between the terminals 118 . 120 arranged such that a portion of the electrical current flowing through the organically functional layered structure 106 flows through the heat distribution structure 408 flows. In various developments, the heat distribution structure 408 between the first electrode 104 and the second electrode 110 arranged.

Alternatively, the heat distribution structure 408 dielectric or electrically non-conductive. The heat distribution structure 408 can for example form an electrical insulation.

In various developments, the encapsulation structure 112 at least part of the heat distribution structure 408 on.

In various developments, the optoelectronic assembly 100 an intermediate layer between the encapsulation structure 112 and the organic functional layer structure 106 on. The intermediate layer may be compared to the encapsulation structure 112 have soft material and act as a cushioning layer. The intermediate layer may be electrically conductive. Alternatively, the intermediate layer is electrically non-conductive.

In various developments, the optoelectronic assembly 100 a beam-influencing structure on. A beam-influencing structure influences the beam path of the emitted light, for example, in the case of a surface light source. A beam-influencing structure comprises, for example, nanoparticles in a layer for changing the refractive index of the layer and / or scattering particles in a layer for diffusing light.

A beam-influencing structure is, for example, a coupling-out structure for an optoelectronic assembly in top emitter or bottom emitter design.

4C 1 illustrates an optoelectronic assembly that is substantially identical to one of the above-described embodiments of an optoelectronic assembly. Continue in 4C illustrates that the optoelectronic assembly 430 a control unit 412 and a cooling unit 414 can have.

The control unit 412 is by means of at least one supply line 418 electrically coupled or connected to an assembly external electrical power source (not illustrated). The module-external electrical energy source provides by means of at least one supply line 418 the operating current and the operating voltage for the optoelectronic module ready.

Furthermore, the control unit 412 by means of connecting lines 422 electrically connected to the first electrode and the second electrode (in 4C illustrated with a light-emitting diode equivalent circuit diagram 106 ). By means of connecting lines 422 For example, an electrical current flow from the first electrode through the organic functional layer structure to the second electrode is enabled, with at least a portion of this electrical current flowing through the electrically conductive structure.

Furthermore, the control unit 412 by means of at least one investigation line 426 electrically connected to the electrically conductive structure. By means of at least one investigation line 426 the electrical resistance of the electrically conductive structure can be determined.

Furthermore, the control unit 412 by means of at least one control and / or supply line 424 with the cooling unit 414 electrically connected. The cooling unit 414 has a control input and a cooling contact. The control input is by means of the control and / or supply line 424 , the control unit and the detection line 426 with the electrically conductive structure 108 electrically coupled. The cooling contact is at least with the organically functional layer structure 106 thermally coupled. The cooling unit 414 is designed so that it has a heat flow 416 can provide. The cooling unit can be designed such that the heat flow 416 to cool down the area to which it is directed. In other words: the cooling unit 414 is so with the electrically conductive structure 108 and at least the organically functional layered structure 106 coupled, that by means of the determined electrical conductivity or the determined electrical resistance of the electrically conductive structure 108 the cooling of at least the organically functional layer structure 106 by means of a heat flow 416 the cooling unit 414 is adjustable.

By means of the control and / or supply line 424 can the heat flow 416 ie the cooling capacity of the cooling unit 414 be set.

In various developments, the heat distribution structure 408 the cooling unit 414 on.

In various developments, the heat distribution structure 408 a thermally passive device and / or a thermally active device. A thermally passive device may be thermally coupled to a thermally active device.

A thermally passive component may be formed, for example, as a cooling surface, a heat pipe or a heat sink.

A thermally active component has actively generated, ie, by applying an electrical energy and / or controllable or controllable heat flow. A thermally active device may be synonymous as a cooling unit 414 be designated. A cooling unit is a device that actively generates a heat flow 416 For example, a cooling (illustrated in 4C ), generated. A cooling unit 414 For example, at least one of the following components may comprise: a fan, a fan, a chiller, for example an absorption or adsorption unit, a diffusion absorption machine, a compression refrigeration system, a steam jet refrigerator, a pulse tube refrigerator, a Peltier element, a magnetic refrigerator , a chiller according to the Linde method or an evaporative cooling.

As a result, by means of an automated control of the cooling unit, a reduction of the self-heating optoelectronic assembly 430 allows. With automated switching points, this is directly on the carrier 102 possible. This makes it possible to detect the temperature of the optoelectronic assembly directly on the luminous surface, which is not possible with external temperature measurements.

In one example, the optoelectronic assembly is configured as a tail lamp in the automotive field. The light-emitting unit of the optoelectronic assembly can be any light-emitting unit, for example in the form of a light-emitting diode, an organic light-emitting diode (illustrated in FIG 4C ) or another conventional electrical, light-emitting component that heats up during operation. It becomes a voltage by means of a detection line 426 over the electrically conductive structure 108 tapped and on a control unit 412 fed back. The control unit 412 For example, a cooling element 414 control, such as a fan or fan. The control unit 412 can also be activated in the idle state of the vehicle so that the full brightness of the emissable light is already available when starting the vehicle.

In various developments, the control unit 412 also usable for other electric current collectors.

5A illustrates a schematic plan view of a second electrode 110 and an electrically conductive structure 108 with positive temperature coefficients of an optoelectronic assembly. The optoelectronic assembly of in 5A shown elements may be substantially identical to one of the embodiments of one of the optoelectronic assemblies described above. 5A further illustrates that the second electrode 110 can be structured. Between the structured areas of the second electrode 110 For example, material with positive temperature coefficients can be arranged. The second electrode 110 Thus, it can have regions that are at least partially, for example completely, laterally of an electrically conductive structure 108 and / or at least one contact 116 are surrounded. The surrounding material may include the at least one via 116 and / or the electrically conductive structure 108 form.

In various developments, the second electrode 110 at least a first electrode region and a second electrode region. The first electrode region and the second electrode region may be spaced apart by means of an intermediate structure. In various developments, the first electrode region and the second electrode region are by means of the electrically conductive structure 108 electrically connected to each other, for example, electrically connected.

In various developments, the electrically conductive structure is formed on or above the intermediate structure. The intermediate structure has at least one through contact. In various developments, the electrically conductive structure is electrically conductively connected by means of at least one through contact with the organically functional layer structure.

In various developments, the intermediate structure has an electrically conductive region, which may be formed electrically insulated from the first electrode region and the second electrode region.

5B Fig. 12 illustrates a schematic top view of a second electrode 110 and an electrically conductive structure 108 with positive temperature coefficients of an optoelectronic assembly. The optoelectronic assembly of in 5B shown elements may be substantially identical to one of the embodiments of one of the optoelectronic assemblies described above. 5B further illustrates that the second electrode 110 can be structured. The structured areas of the second electrode 110 can by means of the electrically conductive structure 108 be electrically and / or thermally connected with positive temperature coefficients. The electrically conductive structure 108 has, for example, a bridge-shaped structure. In other words, between the structured regions of the second electrode 110 For example, an air gap formed by an electrically conductive structure 108 is bridged. This allows the electrically conductive structure 108 by thermal stress in the event of a short circuit or other high temperature rise. This allows individual structured regions of the second electrode 110 be isolated electrically from each other.

In other words:
In various developments, the electrically conductive structure 108 formed on or above the intermediate structure. The intermediate structure has at least one cavity in such a way that the electrically conductive structure 108 bridges the cavity and the first electrode region and the second electrode region by means of the bridging, electrically conductive structure 108 electrically conductive interconnected. In various developments, the electrically conductive structure 108 mechanically tensioned designed such that when a further predetermined temperature or a predetermined temperature range is exceeded, the electrically conductive structure breaks. After fracture, the electrically conductive structure has at least a first region and a second region, wherein the first region is electrically insulated from the second region. In various developments, the further predetermined temperature has a temperature or the predetermined temperature range has a temperature range in a range from approximately 60 ° C. to approximately 650 ° C.

In other words:
In various developments, the electrically conductive structure 108 at least a first area and a second area. The first region may be formed adjacent to the second region. The first region may be substantially thermally isolated from the second region. Furthermore, the first region may be indirectly connected electrically conductively to the second region, for example by means of an electrode region of the second electrodes. In other words, in various developments, the electrically conductive structure 108 as a structured lead for the structured second electrode 110 educated.

In addition, the electrically conductive structure 108 at least a third region, wherein the first region and the second region are interconnected by means of the third region. The thermal insulation of the first region from the second region can be realized, for example, by means of a low transverse conductivity in the third region of the electrically conductive structure.

In various developments, the electrically conductive structure 108 break at a high temperature, for example due to thermal stresses. The high temperature can be caused for example by an electrical short circuit. For example, the high temperature has a value above the Curie temperature of the material of the electrically conductive structure 108 on. The electrically conductive structure 108 leads in this case to a permanent decoupling of the short circuit area 204 (please refer 2 ) from the current path.

The transition temperature of the electrically conductive structure 108 ie the temperature at which the electrically conductive structure 108 is electrically non-conductive, should be below the melting point and / or glass transition temperature of the materials of the organically functional layered structure 106 be. For example, barium titanate as the material has the electroconductive structure 108 a transition temperature of about 120 ° C. This can cause overheating of the optoelectronic module 100 damage to the organic functional layer structure 106 be prevented.

An electrically conductive structure 108 with at least one PTC thermistor bridging an intermediate structure between two electrode regions and connecting electrically conductive, should have a minimum possible width between the electrodes, for example in the micron range. As a result, the intermediate structure and / or the electrically conductive structure can apparently be insignificant. For a viewer of the optoelectronic assembly thus presents a quasi-homogeneous luminous surface.

6 illustrates a flowchart for a method 600 for producing an optoelectronic assembly according to various embodiments. The optoelectronic assembly may be formed substantially identical to one of the above-mentioned embodiments of an optoelectronic assembly.

In various embodiments, a method 600 for producing an optoelectronic assembly 100 provided. The method comprises: forming 602 a first electrode, forming 604 an organic functional layer structure, forming 606 a second electrode; and training 608 an electrically conductive structure with a positive temperature coefficient. The organically functional layer structure is formed electrically coupled to the first electrode and the second electrode. The electrically conductive structure is formed on or above the organic functional layer structure. The electrically conductive structure is electrically coupled to the organic functional layer structure such that at least a portion of the electrical current flowing from the first electrode through the organic functional layer structure to the second electrode flows through the electrically conductive structure.

In other words: the procedure 600 indicates: a training 604 an organic functional structure on or above a first electrode; a training 606 a second electrode on or above the organic functional structure; and a training 608 an electrically conductive structure having positive temperature coefficients such that at least part of the electric current flowing from the first electrode through the organic functional layer structure to the second electrode flows through the electrically conductive structure.

The electrically conductive structure may be formed between the organic functional structure and the second electrode. Alternatively or additionally, at least a part of the electrically conductive structure can be formed on the second electrode and be electrically conductively connected to the organically functional structure by means of a through contact through the second electrode. In other words, the education 604 The second electrode may include forming at least a first electrically conductive electrode region and a second electrically conductive electrode region that together form the second electrode and forming at least one electrical via formed between the first electrically conductive electrode region and the second electrically conductive electrode region. Alternatively, the forming has 604 the second electrode comprises forming at least one electrically conductive electrode region and forming at least one electrical contact through the at least one electrode region. The electrically conductive structure is formed in these cases over the at least one via and at least one electrode region.

In various developments, the electrically conductive structure is arranged as a shaped body on or above the organically functional layer structure. In various developments, the shaped body has a planar structure and a contact structure, wherein the contact structure is arranged on or above the planar structure and wherein the planar structure and the contact structure are formed as one piece.

In various developments, the shaped body is applied by means of an electrically conductive adhesive on or above the organically functional layer structure.

In various developments, the electrically conductive structure is deposited as a coating on or above the organically functional layer structure. The electrically conductive structure, d. H. the cold conductive resistance layer is applied, for example, by means of a vapor deposition or deposition process.

For example, the electrically conductive structure 108 formed from barium titanate, platinum or carbon black-filled polymers.

In other words: In various developments, the electrically conductive structure is applied over a large area on or above the organically functional layer structure, for example, applied, for example as shown in FIG 1A is illustrated. The large area application is technically easy to implement. Furthermore, the large-area application may be free of masking or masking processes.

Alternatively, the electrically conductive structure is applied structured, such as in 5B is illustrated. In various exemplary embodiments, the electrically conductive structure is formed in such a way that the at least two electrodes of the structured electrode are electrically connected in parallel, ie have substantially the same electrical potential.

The application of the electrically conductive structure can be effected, for example, by means of sputtering, printing or a transfer process of the electrically conductive structure of, for example, a film. The structured electrically conductive structure allows a defined adaptation to the geometry of the patterned electrode. Furthermore, in the case of thermally induced rupture of the electrically conductive structure, simple stripping of the short-circuiting region concerned is possible.

The structured electrically conductive structure and / or the structured (second) electrode may be formed in any geometry.

It becomes a process in various aspects 700 provided for operating an optoelectronic assembly. The method comprises determining 702 the electrical conductivity of the electrically conductive structure; a comparison 704 the determined electrical conductivity with a predetermined conductivity, and a setting 706 the heat flow of the cooling unit depending on the result of the comparison.

The optoelectronic assembly can essentially be designed according to one of the developments described above. By way of example, the optoelectronic assembly has a first electrode, an organically functional layer structure, a second electrode; and an electrically conductive structure having a positive temperature coefficient, wherein the electrically conductive structure is electrically conductive at a first temperature and is electrically nonconductive at a second temperature. The organically functional layer structure is electrically coupled to the first electrode and the second electrode. The electrically conductive structure is electrically coupled to the organic functional layer structure such that at least a portion of the electrical current flowing from the first electrode through the organic functional layer structure to the second electrode flows through the electrically conductive structure. Furthermore, the optoelectronic assembly has a heat distribution structure with a cooling unit, wherein the cooling unit has a control input and a cooling contact. The control input is electrically coupled to the electrically conductive structure and the cooling contact is thermally coupled at least to the organically functional layer structure such that the heat dissipation of at least the organically functional layer structure can be adjusted by means of a heat flow of the cooling unit by means of the electrical conductivity of the electrically conductive structure.

The predetermined temperature may for example be an allowable limit, for example 105 ° C in the automotive sector.

Determining 702 and compare 704 can be done for example in a control unit. The setting 706 may be, for example, a signal to a throttle of the cooling unit.

The invention is not limited to the specified embodiments. For example, the optoelectronic assembly may be formed as a photodetector and / or a display.

Claims (19)

Optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ), with • a first electrode ( 104 ), • an organic functional layer structure ( 106 ), • a second electrode ( 110 ); and an electrically conductive structure ( 108 ) having a positive temperature coefficient, - the organic functional layer structure ( 106 ) electrically coupled to the first electrode ( 104 ) and the second electrode ( 110 ), and - wherein the electrically conductive structure ( 108 ) with the organic functional layer structure ( 106 ) is electrically coupled, that at least a portion of the electrical current from the first electrode ( 104 ) through the organic functional layer structure ( 106 ) to the second electrode ( 110 ) flows through the electrically conductive structure ( 108 ) flows. Optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ) according to claim 1, wherein the electrically conductive structure ( 108 ) is formed such that the electrically conductive structure ( 108 ) is electrically conductive below a predetermined temperature and above the predetermined temperature is electrically non-conductive. Optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ) according to one of claims 1 or 2, wherein at least a part of the electrically conductive structure ( 108 ) and the organic functional layer structure ( 106 ) are electrically connected to each other in series. Optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ) according to one of claims 1 to 3, wherein the electrically conductive structure ( 108 ) at least with the first electrode ( 104 ), the organic functional layer structure ( 106 ) or the second electrode ( 110 ) has physical contact. Optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ) according to one of claims 1 to 4, wherein the electrically conductive structure ( 108 ) on or above the organically functional layered structure ( 106 ) is trained Optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ) according to one of claims 1 to 5, further comprising: at least one connection ( 118 . 120 ) for electrically contacting with a module-external energy source, wherein the electrically conductive structure ( 108 ) physically and in the current path between the at least one terminal and at least one of the first electrode ( 104 ), the organic functional layer structure ( 108 ) or the second electrode ( 110 ) is trained. Optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ) according to one of claims 1 to 6, wherein the second electrode ( 110 ) at least one electrode region and an electrically conductive through-contact ( 116 ), wherein the electrically conductive via ( 116 ) is electrically isolated from the electrode region, and wherein the electrically conductive structure ( 108 ) by means of the electrically conductive through contact ( 116 ) it with the organic functional layer structure ( 106 ) is electrically conductively connected. Optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ) according to claim 7, wherein at least a part of the electrically conductive through-contact ( 116 ) and the electrically conductive structure are formed in one piece. Optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ) according to one of claims 1 to 8, wherein the second electrode ( 110 ) has at least a first electrode region and a second electrode region, wherein the first electrode region and the second electrode region are spaced apart by means of an intermediate structure. Optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ) according to claim 9, wherein the electrically conductive structure ( 108 ) is formed on or above the intermediate structure and the intermediate structure has at least one cavity such that the electrically conductive structure ( 108 ) bridges the cavity and the first electrode region and the second electrode region by means of the bridging, electrically conductive structure ( 108 ) are electrically conductively connected. Optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ) according to claim 9, wherein the electrically conductive structure ( 108 ) is designed to be mechanically stressed such that, when a further, predetermined temperature or a predetermined temperature range is exceeded, the electrically conductive structure ( 108 ) breaks. Optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ) according to one of claims 1 to 11, further comprising a heat distribution structure ( 408 ), the heat distribution structure ( 408 ) with the electrically conductive structure ( 108 ) is formed thermally coupled. Optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ) according to claim 12, wherein the second electrode ( 110 ) the heat distribution structure ( 408 ) or is formed. Optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ) according to claim 12, wherein the heat distribution structure ( 408 ) a cooling unit ( 414 ) having a control input and a cooling contact, wherein the control input with the electrically conductive structure ( 108 ) is electrically coupled and the cooling contact at least with the organically functional layer structure ( 106 ) is thermally coupled such that by means of the electrical conductivity of the electrically conductive structure ( 108 ) the cooling of at least the organically functional layer structure ( 106 ) by means of a heat flow ( 416 ) of the cooling unit ( 414 ) is adjustable. Optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ) according to one of claims 1 to 14, further comprising an encapsulation structure ( 112 ), wherein at least the organically functional layer structure ( 106 ) and the electrically conductive structure ( 108 ) by means of the encapsulation structure ( 112 ) are hermetically sealed with respect to an in-diffusion of an organic functional layer structure ( 106 ) harmful substance, preferably water and / or oxygen. Optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ) according to one of claims 1 to 15, wherein the optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ) is formed as a surface component, preferably as a surface light source and / or a display. Procedure ( 600 ) for producing an optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ), the method comprising: • forming a first electrode ( 104 ), • forming an organic functional layer structure ( 106 ), • forming a second electrode ( 110 ); and • forming an electrically conductive structure ( 108 ) having a positive temperature coefficient, - the organic functional layer structure ( 106 ) electrically coupled to the first electrode ( 104 ) and the second electrode ( 110 ), and - wherein the electrically conductive structure ( 108 ) with the organic functional layer structure ( 106 ) is electrically coupled, that at least a portion of the electrical current from the first electrode ( 104 ) through the organic functional layer structure ( 106 ) to the second electrode ( 110 ) flows through the electrically conductive structure ( 108 ) flows. A method according to claim 17, wherein the electrically conductive structure ( 108 ) as a shaped body on or above the organic functional layer structure ( 106 ) is arranged. Procedure ( 700 ) for operating an optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ), the optoelectronic assembly ( 100 . 130 . 140 . 150 . 160 ) according to claim 14, the method comprising: • determining ( 702 ) the electrical conductivity of the electrically conductive structure ( 108 ); • To compare ( 704 ) of the determined electrical conductivity with a given conductivity, and • setting ( 706 ) of the heat flow ( 416 ) of the cooling unit ( 414 ) depending on the result of the comparison.

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