WO2016054832A1 - 显示面板及薄膜晶体管阵列基板 - Google Patents

显示面板及薄膜晶体管阵列基板 Download PDF

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Publication number
WO2016054832A1
WO2016054832A1 PCT/CN2014/088608 CN2014088608W WO2016054832A1 WO 2016054832 A1 WO2016054832 A1 WO 2016054832A1 CN 2014088608 W CN2014088608 W CN 2014088608W WO 2016054832 A1 WO2016054832 A1 WO 2016054832A1
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WO
WIPO (PCT)
Prior art keywords
sub
protrusion
array
display panel
recess
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/CN2014/088608
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English (en)
French (fr)
Inventor
叶岩溪
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/410,449 priority Critical patent/US20160274393A1/en
Publication of WO2016054832A1 publication Critical patent/WO2016054832A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134336—Matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a display panel and a thin film transistor array substrate.
  • TFT-LCD Thin Film Transistor Liquid Crystal
  • a plurality of pixel units including a green sub-pixel 101, a blue sub-pixel 102, and a red sub-pixel 103 are disposed on the display panel, and a plurality of strip electrodes are arranged side by side on the pixel unit, and the strip electrodes are used Applying a first electric field to the liquid crystal molecules to drive the liquid crystal molecules to achieve gray scale conversion.
  • the second electric field is generally generated at the junction of the strip electrodes arranged in parallel, and the direction corresponding to the second electric field is different from the direction corresponding to the first electric field. Therefore, the liquid crystal molecules in the vicinity of the joint are not controlled, resulting in a darkening phenomenon (Declination) of the display region 104 corresponding to the joint, as shown in FIG.
  • the display panel includes: a color filter substrate; a liquid crystal layer; and a thin film transistor array substrate, wherein the thin film transistor array substrate is provided with at least two pixel units, at least two of the pixels
  • the cells are arranged in an array, the pixel unit comprising a pixel electrode, wherein the pixel electrode comprises: at least two electrodes, the strip electrode comprises a first end and a second end; and at least one connecting electrode
  • the edge of the connecting electrode includes at least two contact regions, and the contact region is connected to the first end of the strip electrode; wherein the edge is located at a portion between two adjacent contact regions a recessed array or array of protrusions; the array of recesses comprising at least two recesses, at least two of which are arranged in an array; the array of protrusions comprising at least two protrusions, at least two of which are in an array Arranged in the form.
  • the surface of the recessed portion is provided with a first sub-protrusion portion or a first sub-pit portion.
  • the surface of the protrusion is provided with a second sub-protrusion or a second sub-recess.
  • a display panel comprising: a color filter substrate; a liquid crystal layer; and a thin film transistor array substrate, wherein the thin film transistor array substrate is provided with at least two pixel units, at least two of the pixel units Arranged in the form of an array, the pixel unit includes a pixel electrode, wherein the pixel electrode includes: at least two electrodes, the strip electrode includes a first end and a second end; and at least one connection electrode, The edge of the connection electrode includes at least two contact regions, the contact region being connected to the first end of the strip electrode; wherein the edge is located at a portion between the adjacent two of the contact regions Array or array of protrusions.
  • the recess array includes at least two recesses, and at least two of the recesses are arranged in an array.
  • the surface of the recessed portion is provided with a first sub-protrusion portion or a first sub-pit portion.
  • the first sub-protrusion or the first sub-depression is elongated or granular; the first sub-protrusion or the first sub-depression is distributed throughout the recess a surface; the first sub-protrusion is formed by sputtering or coating a surface of the recess, the first sub-depression is performed by etching on a surface of the recess or Cut to form.
  • the corners of the depressed portion are provided in a rounded shape.
  • the array of protrusions includes at least two protrusions, and at least two of the protrusions are arranged in an array.
  • the surface of the protrusion is provided with a second sub-protrusion or a second sub-recess.
  • the second sub-protrusion portion or the second sub-recessed portion is elongated or granular; the second sub-protrusion portion or the second sub-recessed portion is distributed throughout the protruding portion a second sub-protrusion formed by sputtering or coating a second conductive material on a surface of the protrusion, the second sub-recess being etched or etched on a surface of the protrusion Cut to form.
  • the corners of the protrusions are provided in a rounded shape.
  • a thin film transistor array substrate wherein the thin film transistor array substrate is provided with at least two pixel units, at least two of the pixel units are arranged in an array, the pixel unit comprises a pixel electrode, wherein the pixel electrode comprises: At least two electrodes, the strip electrode including a first end and a second end; and at least one connecting electrode, the connecting electrode includes at least two contact regions at the edge, the contact region and the strip electrode The first end is connected; wherein the portion of the edge between the adjacent two of the contact regions is provided with an array of recesses or an array of protrusions.
  • the recess array includes at least two recesses, and at least two of the recesses are arranged in an array.
  • the surface of the depressed portion is provided with a first sub-protrusion portion or a first sub-pit portion.
  • the first sub-protrusion portion or the first sub-recessed portion is elongated or granular; the first sub-protrusion portion or the first sub-depression portion is spread over the recess a surface of the portion; the first sub-protrusion is formed by sputtering or coating a surface of the recess, the first sub-depression being performed on a surface of the recess Etched or cut to form.
  • the corners of the depressed portion are provided in a rounded shape.
  • the protrusion array includes at least two protrusions, and at least two of the protrusions are arranged in an array.
  • the surface of the protruding portion is provided with a second sub-protrusion portion or a second sub-pit portion.
  • the second sub-protrusion portion or the second sub-recessed portion is elongated or granular; the second sub-protrusion portion or the second sub-depression portion is spread over the protrusion a surface of the portion; the second sub-protrusion portion is formed by sputtering or coating a second conductive material on a surface of the protrusion portion, the second sub-recessed portion being formed on a surface of the protrusion portion Etched or cut to form.
  • the present invention has a greater improvement in the dark area phenomenon than the conventional technical solution.
  • the transmittance of the display panel of the present invention has a significant improvement over the transmittance of the conventional technology.
  • FIG. 1 is a schematic view of a pixel unit in a conventional display panel
  • FIG. 2 is a schematic view showing a first embodiment of a pixel unit of a display panel of the present invention
  • FIG. 3 is a schematic view showing a second embodiment of a pixel unit of a display panel of the present invention.
  • FIG. 4 is a schematic view showing a third embodiment of a pixel unit of a display panel of the present invention.
  • Fig. 5a and Fig. 5b are schematic views respectively showing differences in the dark region phenomenon between the conventional technique and the present invention.
  • FIG. 2 is a schematic diagram of a first embodiment of a pixel unit of a display panel of the present invention
  • FIG. 3 is a schematic diagram of a second embodiment of a pixel unit of the display panel of the present invention
  • the display panel of the present invention comprises a color filter (CF, Color Filter) substrate, liquid crystal (LC, Liquid) Crystal) layer and thin film transistor (TFT, Thin Film)
  • CF Color Filter
  • LC liquid crystal
  • TFT Thin Film
  • the array substrate wherein the color filter substrate and the thin film transistor array substrate are superimposed and integrated, and the liquid crystal layer is disposed between the color filter substrate and the thin film transistor array substrate.
  • the thin film transistor array substrate is provided with at least two pixel units, at least two scan lines and at least two data lines, at least two of which are arranged in an array, the pixel unit comprising a thin film transistor switch 201 and a pixel electrode 202
  • the thin film transistor switch 201 is connected to the pixel electrode 202, the data line and the scan line, wherein the pixel electrode 202 includes at least two electrodes 2021 and at least one connection electrode 2022.
  • the strip electrode 2021 includes a first end and a second end.
  • the edge of the connection electrode 2022 includes at least two contact regions, which are contact regions/connection regions of the connection electrode 2022 and the strip electrode 2021, and the contact region and the strip electrode 2021 The first end of the connection. The second end is away from the connection electrode 2022.
  • the edge line corresponding to the portion between the two adjacent contact regions at the edge is a curve (including a regular curve or an irregular curve), wherein the edge line is the first at the edge The line corresponding to the section. That is, a portion of the edge located between adjacent two of the contact regions is provided with a recess array 203, as shown in FIGS. 2 and 4. Alternatively, a portion of the edge located between adjacent two of the contact regions is provided with a protrusion array 301, as shown in FIG.
  • the recess array 203 or the bump array 301 is formed by an etching or dicing process.
  • the formation process of the recess array 203 or the bump array 301 is performed in synchronization with the formation process of the connection electrode 2022.
  • the shape of the recess array 203 in the second cross section or the shape of the protrusion array 301 in the third cross section is in a zigzag shape.
  • the first section, the second section, and the third section are all parallel to a plane in which the thin film transistor array substrate is located.
  • the recess array 203 includes at least two recesses 2031, and the cross-sectional shape of the recess 2031 may be a triangle, as shown in FIG. 2, or may be semi-circular, as shown in FIG. 4, at least two of the recesses.
  • the portions 2031 are arranged in an array, and at least two of the recesses 2031 are arranged in an array in a first direction 204, the first direction 204 being parallel to a line in which the connection electrodes 2022 are located.
  • the recessed portion 2031 is recessed in a direction parallel to the second direction 205, and the second direction 205 is perpendicular to the first direction 204, that is, the recessed portion 2031 is recessed in a direction perpendicular to a side surface of the connecting electrode 2022.
  • the strip electrode 2021 is provided with the recess array 203 including at least two of the recesses 2031 in the first direction 204, at least two of the recesses 2031 are in the The portions of the electric field generated in the two directions 205 can cancel each other, thereby improving the electric field darkening phenomenon.
  • the surface of the recess 2031 is provided with a first sub-protrusion or a first sub-recess.
  • the first sub-protrusion or the first sub-depression is elongated or granular.
  • the first sub-protrusion or the first sub-depression is distributed over the surface of the recess 2031.
  • the first sub-protrusion is formed by sputtering or coating a surface of the recess 2031 by etching or coating a first conductive material on the surface of the recess 2031 or Cut to form.
  • the curve corresponding to the cross section of the recessed portion 2031 is a continuous curve, that is, the corners of the recessed portion 2031 are arranged to be smooth/smooth, which is advantageous for the smoothness of the recessed portion 2031.
  • the charge on the angular surface is relatively evenly distributed.
  • the protrusion array 301 includes at least two protrusions 3011, and the protrusions 3011 may have a triangular shape. As shown in FIG. 3, at least two of the protrusions 3011 are arranged in an array, at least two of the protrusions. The portions 3011 are arranged in an array along the first direction 204. The direction in which the protrusion 3011 protrudes is parallel to the second direction 205, that is, the direction in which the protrusion 3011 protrudes is perpendicular to the side surface of the connection electrode 2022.
  • the strip electrode 2021 is provided with the protrusion array 301 including at least two of the protrusions 3011 in the first direction 204, at least two of the protrusions 3011 are in the The portions of the electric field generated in the two directions 205 can cancel each other out. Thereby, the dark region phenomenon of the electric field can be improved.
  • the surface of the protrusion 3011 is provided with a second sub-protrusion or a second sub-recess.
  • the second sub-protrusion or the second sub-depression is elongated or granular.
  • the second sub-protrusion or the second sub-depression is distributed over the surface of the protrusion 3011.
  • the second sub-protrusion portion is formed by sputtering or coating a surface of the protrusion portion 3011 by etching or coating a second conductive material on the surface of the protrusion portion 3011 or Cut to form.
  • the curve corresponding to the cross section of the protrusion 3011 is a continuous curve, that is, the corner of the protrusion 3011 is set to be smooth/smooth, which is advantageous for the smoothness of the protrusion 3011.
  • the charge on the angular surface is relatively evenly distributed.
  • the transmittance of the display panel of the present invention has a significant improvement compared with the transmittance of the conventional technology, as shown in Table 1.
  • FIG. 5a and 5b are schematic views respectively showing differences in the dark region phenomenon between the conventional technique and the present invention. It can be seen from FIG. 5a and FIG. 5b that the technical solution of the present invention has a greater improvement in the dark area phenomenon than the conventional technical solution, which is advantageous for improving the display quality.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)

Abstract

一种显示面板及薄膜晶体管阵列基板，该显示面板包括彩色滤光片基板、液晶层以及薄膜晶体管阵列基板，该薄膜晶体管阵列基板上的像素单元包括条状电极（2021）和连接电极（2022）；该连接电极的边缘处的接触区与该条状电极（2021）的一末端连接；相邻两个该接触区之间的部位设置有凹陷（203）或突起阵列（301）。该显示面板及薄膜晶体管阵列基板能降低暗区现象的出现概率。

Description

显示面板及薄膜晶体管阵列基板 技术领域
本发明涉及显示技术领域，特别涉及一种显示面板及薄膜晶体管阵列基板。
 背景技术
传统的TFT-LCD（Thin Film Transistor Liquid Crystal Display）显示面板上设置有多个像素单元（包括绿色子像素101、蓝色子像素102和红色子像素103），所述像素单元上并列设置有多个条状电极，所述条状电极用于向液晶分子施加第一电场来驱动液晶分子实现灰阶转换。
在实践中，发明人发现现有技术至少存在以下问题：
并列设置的条状电极的连接处一般会产生第二电场，所述第二电场所对应的方向与所述第一电场所对应的方向不同。因此，所述连接处附近的液晶分子不受控制，从而导致所述连接处所对应的显示区域104出现暗区现象（Declination），如图1所示。电压越大，所述暗区现象越明显，这会导致显示面板的穿透率降低，影响显示质量。
故，有必要提出一种新的技术方案，以解决上述技术问题。
 技术问题
本发明的目的在于提供一种显示面板及薄膜晶体管阵列基板，其能降低暗区现象的出现概率，提高显示质量。
 技术解决方案
一种显示面板中，所述显示面板包括：一彩色滤光片基板；一液晶层；以及一薄膜晶体管阵列基板，所述薄膜晶体管阵列基板上设置有至少两个像素单元，至少两所述像素单元以阵列的形式排列，所述像素单元包括像素电极，其中，所述像素电极包括：至少两条状电极，所述条状电极包括第一末端和第二末端；以及至少一连接电极，所述连接电极的边缘处包括至少两个接触区，所述接触区与所述条状电极的第一末端连接；其中，所述边缘处位于相邻两个所述接触区之间的部位设置有凹陷阵列或突起阵列；所述凹陷阵列包括至少两个凹陷部，至少两个所述凹陷部以阵列的形式排列；所述突起阵列包括至少两个突起部，至少两个所述突起部以阵列的形式排列。
在上述显示面板中，所述凹陷部的表面设置有第一子突起部或第一子凹陷部。
在上述显示面板中，所述突起部的表面设置有第二子突起部或第二子凹陷部。
一种显示面板，所述显示面板包括：一彩色滤光片基板；一液晶层；以及一薄膜晶体管阵列基板，所述薄膜晶体管阵列基板上设置有至少两个像素单元，至少两所述像素单元以阵列的形式排列，所述像素单元包括像素电极，其中，所述像素电极包括：至少两条状电极，所述条状电极包括第一末端和第二末端；以及至少一连接电极，所述连接电极的边缘处包括至少两个接触区，所述接触区与所述条状电极的第一末端连接；其中，所述边缘处位于相邻两个所述接触区之间的部位设置有凹陷阵列或突起阵列。
在上述显示面板中，所述凹陷阵列包括至少两个凹陷部，至少两个所述凹陷部以阵列的形式排列。
在上述显示面板中，所述凹陷部的表面设置有第一子突起部或第一子凹陷部。
在上述显示面板中，所述第一子突起部或所述第一子凹陷部为长条状或颗粒状；所述第一子突起部或所述第一子凹陷部遍布所述凹陷部的表面；所述第一子突起部是通过在所述凹陷部的表面溅射或涂布第一导电材料来形成的，所述第一子凹陷部是通过在所述凹陷部的表面进行蚀刻或切割来形成的。
在上述显示面板中，所述凹陷部的棱角设置为圆滑状。
在上述显示面板中，所述突起阵列包括至少两个突起部，至少两个所述突起部以阵列的形式排列。
在上述显示面板中，所述突起部的表面设置有第二子突起部或第二子凹陷部。
在上述显示面板中，所述第二子突起部或所述第二子凹陷部为长条状或颗粒状；所述第二子突起部或所述第二子凹陷部遍布所述突起部的表面；所述第二子突起部是通过在所述突起部的表面溅射或涂布第二导电材料来形成的，所述第二子凹陷部是通过在所述突起部的表面进行蚀刻或切割来形成的。
在上述显示面板中，所述突起部的棱角设置为圆滑状。
一种薄膜晶体管阵列基板，所述薄膜晶体管阵列基板上设置有至少两个像素单元，至少两所述像素单元以阵列的形式排列，所述像素单元包括像素电极，其中，所述像素电极包括：至少两条状电极，所述条状电极包括第一末端和第二末端；以及至少一连接电极，所述连接电极的边缘处包括至少两个接触区，所述接触区与所述条状电极的第一末端连接；其中，所述边缘处位于相邻两个所述接触区之间的部位设置有凹陷阵列或突起阵列。
在上述薄膜晶体管阵列基板中，所述凹陷阵列包括至少两个凹陷部，至少两个所述凹陷部以阵列的形式排列。
在上述薄膜晶体管阵列基板中，所述凹陷部的表面设置有第一子突起部或第一子凹陷部。
在上述薄膜晶体管阵列基板中，所述第一子突起部或所述第一子凹陷部为长条状或颗粒状；所述第一子突起部或所述第一子凹陷部遍布所述凹陷部的表面；所述第一子突起部是通过在所述凹陷部的表面溅射或涂布第一导电材料来形成的，所述第一子凹陷部是通过在所述凹陷部的表面进行蚀刻或切割来形成的。
在上述薄膜晶体管阵列基板中，所述凹陷部的棱角设置为圆滑状。
在上述薄膜晶体管阵列基板中，所述突起阵列包括至少两个突起部，至少两个所述突起部以阵列的形式排列。
在上述薄膜晶体管阵列基板中，所述突起部的表面设置有第二子突起部或第二子凹陷部。
在上述薄膜晶体管阵列基板中，所述第二子突起部或所述第二子凹陷部为长条状或颗粒状；所述第二子突起部或所述第二子凹陷部遍布所述突起部的表面；所述第二子突起部是通过在所述突起部的表面溅射或涂布第二导电材料来形成的，所述第二子凹陷部是通过在所述突起部的表面进行蚀刻或切割来形成的。
 有益效果
相对现有技术，本发明在暗区现象方面相比传统技术方案具有较大的改善。此外，本发明的显示面板的穿透率相对传统技术的穿透率具有较显著的提升。
 附图说明
图1为传统的显示面板中像素单元的示意图；
图2为本发明的显示面板的像素单元的第一实施例的示意图；
图3为本发明的显示面板的像素单元的第二实施例的示意图；
图4为本发明的显示面板的像素单元的第三实施例的示意图；
图5a和图5b分别为传统技术和本发明在暗区现象方面的差异的示意图。
 本发明的最佳实施方式
本说明书所使用的词语“实施例”意指用作实例、示例或例证。此外，本说明书和所附权利要求中所使用的冠词“一”一般地可以被解释为意指“一个或多个”，除非另外指定或从上下文清楚导向单数形式。
Figure TP140588PCT-appb-I000001
参考图2、图3和图4，图2为本发明的显示面板的像素单元的第一实施例的示意图，图3为本发明的显示面板的像素单元的第二实施例的示意图，图4为本发明的显示面板的像素单元的第三实施例的示意图。
Figure TP140588PCT-appb-I000001
本发明的显示面板包括彩色滤光片（CF，Color Filter）基板、液晶（LC，Liquid Crystal）层以及薄膜晶体管（TFT，Thin Film Transistor）阵列基板，其中，所述彩色滤光片基板和所述薄膜晶体管阵列基板叠加组合为一体，所述液晶层设置于所述彩色滤光片基板和所述薄膜晶体管阵列基板之间。
所述薄膜晶体管阵列基板上设置有至少两个像素单元、至少两扫描线以及至少两数据线，至少两所述像素单元以阵列的形式排列，所述像素单元包括薄膜晶体管开关201和像素电极202，所述薄膜晶体管开关201与所述像素电极202、所述数据线和所述扫描线连接，其中，所述像素电极202包括至少两条状电极2021和至少一连接电极2022。
所述条状电极2021包括第一末端和第二末端。所述连接电极2022的边缘处包括至少两个接触区，所述接触区为所述连接电极2022与所述条状电极2021的接触区域/连接区域，所述接触区与所述条状电极2021的第一末端连接。所述第二末端远离所述连接电极2022。
Figure TP140588PCT-appb-I000001
其中，所述边缘处位于相邻两个所述接触区之间的部位所对应的边缘线为曲线（包括规则曲线或不规则曲线），其中，所述边缘线为所述边缘处的第一截面所对应的线条。即，所述边缘处位于相邻两个所述接触区之间的部位设置有凹陷阵列203，如图2和图4所示。或者，所述边缘处位于相邻两个所述接触区之间的部位设置有突起阵列301，如图3所示。
Figure TP140588PCT-appb-I000001
所述凹陷阵列203或所述突起阵列301是通过蚀刻或切割工序来形成的。所述凹陷阵列203或所述突起阵列301的形成过程与所述连接电极2022的形成过程同步进行。
所述凹陷阵列203在第二截面中的形状或所述突起阵列301在第三截面中的形状均为锯齿状。所述第一截面、所述第二截面和所述第三截面均平行于所述薄膜晶体管阵列基板所在的平面。
Figure TP140588PCT-appb-I000001
所述凹陷阵列203包括至少两个凹陷部2031，所述凹陷部2031的截面形状可以是三角形，如图2所示，也可以是半圆形，如图4所示，至少两个所述凹陷部2031以阵列的形式排列，至少两个所述凹陷部2031沿第一方向204以阵列的形式排列，所述第一方向204与所述连接电极2022所在的直线平行。所述凹陷部2031凹陷的方向与第二方向205平行，所述第二方向205与所述第一方向204垂直，即，所述凹陷部2031凹陷的方向垂直于所述连接电极2022的侧面。
Figure TP140588PCT-appb-I000001
在本发明中，由于所述条状电极2021在所述第一方向204上设置有包括至少两个所述凹陷部2031的凹陷阵列203，因此，至少两个所述凹陷部2031在所述第二方向205上所产生的电场的部分能够相互抵消，从而能够改善电场暗区（Declination）现象。
作为一种改进，所述凹陷部2031的表面设置有第一子突起部或第一子凹陷部。所述第一子突起部或所述第一子凹陷部为长条状或颗粒状。所述第一子突起部或所述第一子凹陷部遍布所述凹陷部2031的表面。所述第一子突起部是通过在所述凹陷部2031的表面溅射或涂布第一导电材料来形成的，所述第一子凹陷部是通过在所述凹陷部2031的表面进行蚀刻或切割来形成的。
Figure TP140588PCT-appb-I000001
所述凹陷部2031的横截面所对应的曲线是连续的曲线，也就是说，所述凹陷部2031的棱角设置为圆滑状/平滑状，这样有利于使得聚集于所述凹陷部2031的圆滑的棱角表面的电荷相对均匀地分布。
所述突起阵列301包括至少两个突起部3011，所述突起部3011的形状可以是三角形，如图3所示，至少两个所述突起部3011以阵列的形式排列，至少两个所述突起部3011沿所述第一方向204以阵列的形式排列。所述突起部3011突起的方向与所述第二方向205平行，即，所述突起部3011突起的方向垂直于所述连接电极2022的所述侧面。
Figure TP140588PCT-appb-I000001
在本发明中，由于所述条状电极2021在所述第一方向204上设置有包括至少两个所述突起部3011的突起阵列301，因此，至少两个所述突起部3011在所述第二方向205上所产生的电场的部分能够相互抵消。从而能够改善电场暗区现象。
作为一种改进，所述突起部3011的表面设置有第二子突起部或第二子凹陷部。所述第二子突起部或所述第二子凹陷部为长条状或颗粒状。所述第二子突起部或所述第二子凹陷部遍布所述突起部3011的表面。所述第二子突起部是通过在所述突起部3011的表面溅射或涂布第二导电材料来形成的，所述第二子凹陷部是通过在所述突起部3011的表面进行蚀刻或切割来形成的。
所述突起部3011的横截面所对应的曲线是连续的曲线，也就是说，所述突起部3011的棱角设置为圆滑状/平滑状，这样有利于使得聚集于所述突起部3011的圆滑的棱角表面的电荷相对均匀地分布。
Figure TP140588PCT-appb-I000001
通过上述技术方案，在像素电极202具有较高的灰阶电压输入的情况下，本发明的显示面板的穿透率相对传统技术的穿透率具有较显著的提升，如表1所示。
Figure TP140588PCT-appb-I000002
从上述表1可以看出，灰阶电压越大，本发明的技术方案所对应的穿透率相比传统技术方案所对应的穿透率的提升越大。
此外，参考图5a和图5b，图5a和图5b分别为传统技术和本发明在暗区现象方面的差异的示意图。从图5a和图5b可以看出，本发明的技术方案中在暗区现象方面相比传统技术方案具有较大的改善，有利于提高显示质量。
尽管已经相对于一个或多个实现方式示出并描述了本发明，但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本发明包括所有这样的修改和变型，并且仅由所附权利要求的范围限制。特别地关于由上述组件执行的各种功能，用于描述这样的组件的术语旨在对应于执行所述组件的指定功能（例如其在功能上是等价的）的任意组件（除非另外指示），即使在结构上与执行本文所示的本说明书的示范性实现方式中的功能的公开结构不等同。此外，尽管本说明书的特定特征已经相对于若干实现方式中的仅一个被公开，但是这种特征可以与如可以对给定或特定应用而言是期望和有利的其他实现方式的一个或多个其他特征组合。而且，就术语“包括”、“具有”、“含有”或其变形被用在具体实施方式或权利要求中而言，这样的术语旨在以与术语“包含”相似的方式包括。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种显示面板，其中
    Figure TP140588PCT-appb-I000001
    所述显示面板包括：
    一彩色滤光片基板；
    一液晶层；以及
    一薄膜晶体管阵列基板，所述薄膜晶体管阵列基板上设置有至少两个像素单元，至少两所述像素单元以阵列的形式排列，所述像素单元包括像素电极，其中，所述像素电极包括：
    至少两条状电极，所述条状电极包括第一末端和第二末端；以及
    至少一连接电极，所述连接电极的边缘处包括至少两个接触区，所述接触区与所述条状电极的第一末端连接；
    其中，所述边缘处位于相邻两个所述接触区之间的部位设置有凹陷阵列或突起阵列；
    所述凹陷阵列包括至少两个凹陷部，至少两个所述凹陷部以阵列的形式排列；
    所述突起阵列包括至少两个突起部，至少两个所述突起部以阵列的形式排列。
    Figure TP140588PCT-appb-I000001
  2. 根据权利要求1所述的显示面板，其中
    所述凹陷部的表面设置有第一子突起部或第一子凹陷部。
    Figure TP140588PCT-appb-I000001
  3. 根据权利要求1所述的显示面板，其中
    所述突起部的表面设置有第二子突起部或第二子凹陷部。
  4. 一种显示面板，其中
    所述显示面板包括：
    一彩色滤光片基板；
    一液晶层；以及
    一薄膜晶体管阵列基板，所述薄膜晶体管阵列基板上设置有至少两个像素单元，至少两所述像素单元以阵列的形式排列，所述像素单元包括像素电极，其中，所述像素电极包括：
    至少两条状电极，所述条状电极包括第一末端和第二末端；以及
    至少一连接电极，所述连接电极的边缘处包括至少两个接触区，所述接触区与所述条状电极的第一末端连接；
    其中，所述边缘处位于相邻两个所述接触区之间的部位设置有凹陷阵列或突起阵列。
    Figure TP140588PCT-appb-I000001
  5. 根据权利要求4所述的显示面板，其中
    所述凹陷阵列包括至少两个凹陷部，至少两个所述凹陷部以阵列的形式排列。
    Figure TP140588PCT-appb-I000001
  6. 根据权利要求5所述的显示面板，其中
    所述凹陷部的表面设置有第一子突起部或第一子凹陷部。
    Figure TP140588PCT-appb-I000001
  7. 根据权利要求6所述的显示面板，其中
    所述第一子突起部或所述第一子凹陷部为长条状或颗粒状；
    所述第一子突起部或所述第一子凹陷部遍布所述凹陷部的表面；
    所述第一子突起部是通过在所述凹陷部的表面溅射或涂布第一导电材料来形成的，所述第一子凹陷部是通过在所述凹陷部的表面进行蚀刻或切割来形成的。
    Figure TP140588PCT-appb-I000001
  8. 根据权利要求7所述的显示面板，其中
    所述凹陷部的棱角设置为圆滑状。
    Figure TP140588PCT-appb-I000001
  9. 根据权利要求4所述的显示面板，其中
    所述突起阵列包括至少两个突起部，至少两个所述突起部以阵列的形式排列。
  10. 根据权利要求9所述的显示面板，其中
    所述突起部的表面设置有第二子突起部或第二子凹陷部。
    Figure TP140588PCT-appb-I000001
  11. 根据权利要求10所述的显示面板，其中
    所述第二子突起部或所述第二子凹陷部为长条状或颗粒状；
    所述第二子突起部或所述第二子凹陷部遍布所述突起部的表面；
    所述第二子突起部是通过在所述突起部的表面溅射或涂布第二导电材料来形成的，所述第二子凹陷部是通过在所述突起部的表面进行蚀刻或切割来形成的。
  12. 根据权利要求11所述的显示面板，其中
    所述突起部的棱角设置为圆滑状。
    Figure TP140588PCT-appb-I000001
  13. 一种薄膜晶体管阵列基板，其中
    所述薄膜晶体管阵列基板上设置有至少两个像素单元，至少两所述像素单元以阵列的形式排列，所述像素单元包括像素电极，其中，所述像素电极包括：
    至少两条状电极，所述条状电极包括第一末端和第二末端；以及
    至少一连接电极，所述连接电极的边缘处包括至少两个接触区，所述接触区与所述条状电极的第一末端连接；
    其中，所述边缘处位于相邻两个所述接触区之间的部位设置有凹陷阵列或突起阵列。
    Figure TP140588PCT-appb-I000001
  14. 根据权利要求13所述的薄膜晶体管阵列基板，其中
    所述凹陷阵列包括至少两个凹陷部，至少两个所述凹陷部以阵列的形式排列。
    Figure TP140588PCT-appb-I000001
  15. 根据权利要求14所述的薄膜晶体管阵列基板，其中
    所述凹陷部的表面设置有第一子突起部或第一子凹陷部。
  16. 根据权利要求15所述的薄膜晶体管阵列基板，其中
    所述第一子突起部或所述第一子凹陷部为长条状或颗粒状；
    所述第一子突起部或所述第一子凹陷部遍布所述凹陷部的表面；
    所述第一子突起部是通过在所述凹陷部的表面溅射或涂布第一导电材料来形成的，所述第一子凹陷部是通过在所述凹陷部的表面进行蚀刻或切割来形成的。
    Figure TP140588PCT-appb-I000001
  17. 根据权利要求16所述的显示面板，其中
    所述凹陷部的棱角设置为圆滑状。
  18. 根据权利要求13所述的薄膜晶体管阵列基板，其中
    所述突起阵列包括至少两个突起部，至少两个所述突起部以阵列的形式排列。
  19. 根据权利要求18所述的薄膜晶体管阵列基板，其中
    所述突起部的表面设置有第二子突起部或第二子凹陷部。
    Figure TP140588PCT-appb-I000001
  20. 根据权利要求19所述的薄膜晶体管阵列基板，其中
    所述第二子突起部或所述第二子凹陷部为长条状或颗粒状；
    所述第二子突起部或所述第二子凹陷部遍布所述突起部的表面；
    所述第二子突起部是通过在所述突起部的表面溅射或涂布第二导电材料来形成的，所述第二子凹陷部是通过在所述突起部的表面进行蚀刻或切割来形成的。
PCT/CN2014/088608 2014-10-09 2014-10-15 显示面板及薄膜晶体管阵列基板 Ceased WO2016054832A1 (zh)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060050220A1 (en) * 2002-09-20 2006-03-09 Hitachi Displays, Ltd. Liquid crystal display device
CN102914920A (zh) * 2012-09-11 2013-02-06 北京京东方光电科技有限公司 一种电容式内嵌触摸屏、其驱动方法及显示装置
CN102937761A (zh) * 2012-11-08 2013-02-20 京东方科技集团股份有限公司 一种液晶显示面板及显示装置
CN103293794A (zh) * 2012-02-22 2013-09-11 上海中航光电子有限公司 一种薄膜晶体管液晶显示装置及其修复方法
CN103901673A (zh) * 2012-12-26 2014-07-02 厦门天马微电子有限公司 边缘场开关模式液晶显示装置的像素单元和阵列基板
CN103941485A (zh) * 2013-02-26 2014-07-23 厦门天马微电子有限公司 边缘场开关模式液晶显示装置的像素单元和阵列基板

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI291072B (en) * 2001-09-28 2007-12-11 Sanyo Electric Co Liquid crystal display unit
KR101221961B1 (ko) * 2006-09-28 2013-01-15 삼성디스플레이 주식회사 액정 표시 장치
TWI417622B (zh) * 2010-12-27 2013-12-01 Au Optronics Corp 畫素結構
TWI483046B (zh) * 2012-05-09 2015-05-01 Chunghwa Picture Tubes Ltd 畫素結構及陣列基板
CN103852940B (zh) * 2012-12-06 2016-05-18 厦门天马微电子有限公司 用于边缘场开关模式液晶显示装置像素单元和阵列基板
CN103913908A (zh) * 2013-12-25 2014-07-09 厦门天马微电子有限公司 电极结构、显示面板和显示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060050220A1 (en) * 2002-09-20 2006-03-09 Hitachi Displays, Ltd. Liquid crystal display device
CN103293794A (zh) * 2012-02-22 2013-09-11 上海中航光电子有限公司 一种薄膜晶体管液晶显示装置及其修复方法
CN102914920A (zh) * 2012-09-11 2013-02-06 北京京东方光电科技有限公司 一种电容式内嵌触摸屏、其驱动方法及显示装置
CN102937761A (zh) * 2012-11-08 2013-02-20 京东方科技集团股份有限公司 一种液晶显示面板及显示装置
CN103901673A (zh) * 2012-12-26 2014-07-02 厦门天马微电子有限公司 边缘场开关模式液晶显示装置的像素单元和阵列基板
CN103941485A (zh) * 2013-02-26 2014-07-23 厦门天马微电子有限公司 边缘场开关模式液晶显示装置的像素单元和阵列基板

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