WO2016047972A3 - Apparatus for manufacturing film and method for manufacturing film using same - Google Patents

Apparatus for manufacturing film and method for manufacturing film using same Download PDF

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Publication number
WO2016047972A3
WO2016047972A3 PCT/KR2015/009824 KR2015009824W WO2016047972A3 WO 2016047972 A3 WO2016047972 A3 WO 2016047972A3 KR 2015009824 W KR2015009824 W KR 2015009824W WO 2016047972 A3 WO2016047972 A3 WO 2016047972A3
Authority
WO
WIPO (PCT)
Prior art keywords
manufacturing film
source
container
manufacturing
same
Prior art date
Application number
PCT/KR2015/009824
Other languages
French (fr)
Korean (ko)
Other versions
WO2016047972A2 (en
Inventor
이성국
심광보
Original Assignee
한양대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한양대학교 산학협력단 filed Critical 한양대학교 산학협력단
Publication of WO2016047972A2 publication Critical patent/WO2016047972A2/en
Publication of WO2016047972A3 publication Critical patent/WO2016047972A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides

Abstract

Provided is an apparatus for manufacturing a film. The apparatus for manufacturing a film comprises: a container which is disposed within a reactor and in which a first source is accommodated; a first source supply unit for supplying the first source into the container; and a second source supply unit for supplying, into the container, a second source which reacts with the first source, wherein the container may comprise: a bottom surface; a side surface extending upwardly from the bottom surface; and a plurality of openings provided at the side surface.
PCT/KR2015/009824 2014-09-23 2015-09-18 Apparatus for manufacturing film and method for manufacturing film using same WO2016047972A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2014-0126498 2014-09-23
KR1020140126498A KR101563817B1 (en) 2014-09-23 2014-09-23 Apparatus for fabricating a layer, and method of fabricating a layer using the same

Publications (2)

Publication Number Publication Date
WO2016047972A2 WO2016047972A2 (en) 2016-03-31
WO2016047972A3 true WO2016047972A3 (en) 2017-05-18

Family

ID=54605069

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2015/009824 WO2016047972A2 (en) 2014-09-23 2015-09-18 Apparatus for manufacturing film and method for manufacturing film using same

Country Status (2)

Country Link
KR (1) KR101563817B1 (en)
WO (1) WO2016047972A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102536979B1 (en) * 2021-11-10 2023-05-26 신정훈 Hydride vapor phase epitaxy apparatus for growth of Gallium Nitride single crystalline
KR102489127B1 (en) * 2021-11-10 2023-01-13 신정훈 Hydride vapor phase epitaxy apparatus for growth of Gallium Nitride single crystalline
KR102489015B1 (en) * 2021-11-10 2023-01-13 신정훈 Hydride vapor phase epitaxy apparatus for growth of Gallium Nitride single crystalline
KR102536978B1 (en) * 2021-11-10 2023-05-26 신정훈 Hydride vapor phase epitaxy apparatus for growth of Gallium Nitride single crystalline

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002173393A (en) * 2000-09-01 2002-06-21 Ngk Insulators Ltd Device and method for producing group iii-v nitride film
KR20090027891A (en) * 2007-09-13 2009-03-18 주식회사 실트론 Apparatus and method for supply of gallium source, and apparatus and method for manufacturing gan substrate using the same
KR20090093064A (en) * 2008-02-28 2009-09-02 주식회사 지에이엔텍 Apparatus and Method for manufacturing GaN bulk
KR20100048480A (en) * 2008-10-31 2010-05-11 주식회사 실트론 Device for manufacturing gan substrate
KR20110097502A (en) * 2010-02-25 2011-08-31 주식회사 티지솔라 An apparatus of forming metal nitride layer for light emitting diode

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002173393A (en) * 2000-09-01 2002-06-21 Ngk Insulators Ltd Device and method for producing group iii-v nitride film
KR20090027891A (en) * 2007-09-13 2009-03-18 주식회사 실트론 Apparatus and method for supply of gallium source, and apparatus and method for manufacturing gan substrate using the same
KR20090093064A (en) * 2008-02-28 2009-09-02 주식회사 지에이엔텍 Apparatus and Method for manufacturing GaN bulk
KR20100048480A (en) * 2008-10-31 2010-05-11 주식회사 실트론 Device for manufacturing gan substrate
KR20110097502A (en) * 2010-02-25 2011-08-31 주식회사 티지솔라 An apparatus of forming metal nitride layer for light emitting diode

Also Published As

Publication number Publication date
KR101563817B1 (en) 2015-11-09
WO2016047972A2 (en) 2016-03-31

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