WO2016047972A3 - Appareil pour fabriquer un film et procédé pour fabriquer un film utilisant ledit appareil - Google Patents

Appareil pour fabriquer un film et procédé pour fabriquer un film utilisant ledit appareil Download PDF

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Publication number
WO2016047972A3
WO2016047972A3 PCT/KR2015/009824 KR2015009824W WO2016047972A3 WO 2016047972 A3 WO2016047972 A3 WO 2016047972A3 KR 2015009824 W KR2015009824 W KR 2015009824W WO 2016047972 A3 WO2016047972 A3 WO 2016047972A3
Authority
WO
WIPO (PCT)
Prior art keywords
manufacturing film
source
container
manufacturing
same
Prior art date
Application number
PCT/KR2015/009824
Other languages
English (en)
Korean (ko)
Other versions
WO2016047972A2 (fr
Inventor
이성국
심광보
Original Assignee
한양대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한양대학교 산학협력단 filed Critical 한양대학교 산학협력단
Publication of WO2016047972A2 publication Critical patent/WO2016047972A2/fr
Publication of WO2016047972A3 publication Critical patent/WO2016047972A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)

Abstract

La présente invention concerne un appareil pour fabriquer un film. L'appareil pour fabriquer un film comprend : un contenant qui est disposé à l'intérieur d'un réacteur et dans lequel une première source est logée ; une unité d'alimentation de première source pour fournir la première source dans le contenant ; et une unité d'alimentation de seconde source pour fournir, dans le contenant, une seconde source qui réagit avec la première source. Le contenant peut comprendre : une surface inférieure ; une surface latérale qui s'étend vers le haut à partir de la surface inférieure ; et une pluralité d'ouvertures prévues sur la surface latérale.
PCT/KR2015/009824 2014-09-23 2015-09-18 Appareil pour fabriquer un film et procédé pour fabriquer un film utilisant ledit appareil WO2016047972A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2014-0126498 2014-09-23
KR1020140126498A KR101563817B1 (ko) 2014-09-23 2014-09-23 막 제조 장치, 및 이를 이용한 막의 제조 방법

Publications (2)

Publication Number Publication Date
WO2016047972A2 WO2016047972A2 (fr) 2016-03-31
WO2016047972A3 true WO2016047972A3 (fr) 2017-05-18

Family

ID=54605069

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2015/009824 WO2016047972A2 (fr) 2014-09-23 2015-09-18 Appareil pour fabriquer un film et procédé pour fabriquer un film utilisant ledit appareil

Country Status (2)

Country Link
KR (1) KR101563817B1 (fr)
WO (1) WO2016047972A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102673843B1 (ko) * 2021-08-30 2024-06-11 에임즈마이크론 주식회사 수위 조절식 갈륨 메탈 보트를 구비한 질화갈륨 단결정 레이어 제조 장치
KR102489127B1 (ko) * 2021-11-10 2023-01-13 신정훈 질화갈륨 단결정 성장을 위한 하이드라이드 기상 증착 장비
KR102489015B1 (ko) * 2021-11-10 2023-01-13 신정훈 질화갈륨 단결정 성장을 위한 하이드라이드 기상 증착 장비
KR102536978B1 (ko) * 2021-11-10 2023-05-26 신정훈 질화갈륨 단결정 성장을 위한 하이드라이드 기상 증착 장비
KR102536979B1 (ko) * 2021-11-10 2023-05-26 신정훈 질화갈륨 단결정 성장을 위한 하이드라이드 기상 증착 장비
WO2024111688A1 (fr) * 2022-11-22 2024-05-30 신정훈 Appareil d'épitaxie en phase vapeur aux hydrures pour la croissance de monocristaux de nitrure de gallium

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002173393A (ja) * 2000-09-01 2002-06-21 Ngk Insulators Ltd Ｉｉｉ−ｖ族窒化物膜の製造装置及び製造方法
KR20090027891A (ko) * 2007-09-13 2009-03-18 주식회사 실트론 갈륨 소스 공급장치 및 방법, 이를 이용한 질화갈륨 기판제조장치 및 방법
KR20090093064A (ko) * 2008-02-28 2009-09-02 주식회사 지에이엔텍 질화갈륨 벌크 제조장치 및 그 제조방법
KR20100048480A (ko) * 2008-10-31 2010-05-11 주식회사 실트론 질화갈륨 기판제조장치
KR20110097502A (ko) * 2010-02-25 2011-08-31 주식회사 티지솔라 발광 다이오드 제조용 금속 질화막 형성 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002173393A (ja) * 2000-09-01 2002-06-21 Ngk Insulators Ltd Ｉｉｉ−ｖ族窒化物膜の製造装置及び製造方法
KR20090027891A (ko) * 2007-09-13 2009-03-18 주식회사 실트론 갈륨 소스 공급장치 및 방법, 이를 이용한 질화갈륨 기판제조장치 및 방법
KR20090093064A (ko) * 2008-02-28 2009-09-02 주식회사 지에이엔텍 질화갈륨 벌크 제조장치 및 그 제조방법
KR20100048480A (ko) * 2008-10-31 2010-05-11 주식회사 실트론 질화갈륨 기판제조장치
KR20110097502A (ko) * 2010-02-25 2011-08-31 주식회사 티지솔라 발광 다이오드 제조용 금속 질화막 형성 장치

Also Published As

Publication number Publication date
KR101563817B1 (ko) 2015-11-09
WO2016047972A2 (fr) 2016-03-31

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