WO2016047090A1 - Dispositif de commande de puissance de sortie - Google Patents

Dispositif de commande de puissance de sortie Download PDF

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Publication number
WO2016047090A1
WO2016047090A1 PCT/JP2015/004676 JP2015004676W WO2016047090A1 WO 2016047090 A1 WO2016047090 A1 WO 2016047090A1 JP 2015004676 W JP2015004676 W JP 2015004676W WO 2016047090 A1 WO2016047090 A1 WO 2016047090A1
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WO
WIPO (PCT)
Prior art keywords
signal
output
amplifier
resistor
bipolar transistor
Prior art date
Application number
PCT/JP2015/004676
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English (en)
Japanese (ja)
Inventor
智 坂田
Original Assignee
Ｎｅｃスペーステクノロジー株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｎｅｃスペーステクノロジー株式会社 filed Critical Ｎｅｃスペーステクノロジー株式会社
Priority to JP2016549930A priority Critical patent/JP6386573B2/ja
Publication of WO2016047090A1 publication Critical patent/WO2016047090A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control

Definitions

  • the present invention relates to an output power control device.
  • Japanese Patent Laid-Open No. 2001-102881 discloses a configuration as shown in FIG.
  • an output signal (Pout) from the output terminal 102 of the high-frequency power amplifier 114 is radiated as a radio wave from the antenna 117 through the coupler 115 and the filter 116.
  • the output signal is detected by the coupler 115.
  • the detected signal is detected by the detector 118 and input to the transmission power control circuit 119.
  • the reference voltage Vref is input to the transmission power control circuit 119.
  • the transmission power control circuit 119 compares the signal from the detector 118 with the reference voltage Vref, generates a signal Vapc based on the result, and supplies the signal Vapc to the base of the high-frequency power amplifier 114 via the base bias circuit 122. Applied. Therefore, the base voltage of the high-frequency power amplifier 114 changes according to the signal Vapc, and the power of the output signal of the high-frequency power amplifier 114 is controlled.
  • the base bias circuit 122 is a differential amplifier that requires two power sources. Therefore, the apparatus is increased in size and weight, and is expensive. was there.
  • a main object of the present invention is to provide an inexpensive output power control device while realizing a reduction in size and weight by suppressing the number of parts to make a simple circuit configuration.
  • an invention relating to an output power control device that automatically controls an output power level when amplifying and outputting an input signal outputs the input signal to a control signal input to a gain control terminal.
  • An amplifier that amplifies based on the signal, a detection circuit that detects the output of the amplifier and outputs the detection signal as a detection signal, and a Zener diode to which the detection signal is input, and the detection voltage is less than the Zener voltage of the Zener diode
  • a control circuit that outputs a control signal that is reduced in accordance with the magnitude of the signal and that outputs a control signal having a predetermined minimum value when the detection signal is greater than the Zener voltage.
  • the control signal when the detection voltage is smaller than the Zener voltage of the Zener diode, the control signal is reduced according to the magnitude of the detection signal, and when the detection signal is larger than the Zener voltage, the predetermined signal is output. Since the minimum value of the control signal is output, the number of parts can be reduced, and the output power control device can be provided with a simple circuit configuration that is small, light, and inexpensive.
  • FIG. 1 is a circuit diagram of an output power control apparatus 2 according to the present embodiment.
  • the output power control device 2 includes an amplifier 10, a detection circuit 20, and a control circuit 30.
  • the amplifier 10 includes an input terminal 10a, an output terminal 10b, and a gain control terminal 10c, amplifies a high frequency signal (RF_IN) input to the input terminal 10a based on the gain signal G1 input to the gain control terminal 10c, and outputs an output terminal 10b. Is output as a high frequency output signal (RF_OUT).
  • RF_IN high frequency signal
  • the amplifier 10 is configured by a MOSFET (metal-oxide-semiconductor field-effect transistor) will be described.
  • MOSFET metal-oxide-semiconductor field-effect transistor
  • the detection circuit 20 includes a detection unit 21 and a filter unit 22.
  • the detector 21 detects the output signal (RF_OUT) of the amplifier 10, a diode 21b for half-wave rectifying the signal detected by the detector 21a, and the anode side of the diode 21b is connected to the ground potential (grounded). ) To output a detected signal as a detection signal G2.
  • the filter unit 22 includes a resistor 22a and a capacitor 22b, smoothes the detection signal G2 from the detection unit 21, and outputs it as a DC detection signal G3.
  • the detection signal G3 is a positive signal.
  • the signal level of the detection signal G3 is described as V0.
  • the control circuit 30 includes a voltage level detection unit 31 and a gain control unit 32.
  • the voltage level detector 31 includes a resistor 31a and a Zener diode 31b. One end of the resistor 31a is connected to the filter circuit 22, and the other end is connected to the anode of the Zener diode 31b. The cathode of the Zener diode 31b is connected to the gain control unit 32.
  • the gain controller 32 includes a first resistor 32a, a first bipolar transistor 32b, a second resistor 32c, a third resistor 32d, and a second bipolar transistor 32e.
  • the first resistor 32a is connected to the emitter and base of the first bipolar transistor 32b
  • the second resistor 32c is connected to the emitter of the first bipolar transistor 32b and the base of the second bipolar transistor 32e
  • the third resistor 32d Is connected to the emitter and base of the second bipolar transistor 32e.
  • the base of the first bipolar transistor 32b is connected to the Zener diode 31b, the collector is grounded, and the emitter is connected to the connection point between the second resistor 32c and the first resistor 32a.
  • the base of the second bipolar transistor 32e is connected to the connection point between the second resistor 32c and the third resistor 32d, the emitter is connected to the third resistor 32d and the power source VD, and the collector is the gain control terminal 10c of the amplifier 10. It is connected to the.
  • the emitter of the first bipolar transistor 32b is connected to the power source (voltage is Vd) VD via the second resistor 32c to the third resistor 32d, and the base is connected to the cathode of the Zener diode 31b. In addition, it is connected to the emitter via the first resistor 32a. Further, the emitter of the second bipolar transistor 32e is also connected to the power supply VD, and the base is connected to the emitter via the third resistor 32d.
  • the emitter-base voltage VFB_1 of the first bipolar transistor 32b decreases, and the base current IB_1 also decreases. Accordingly, the base current IB_2 of the second bipolar transistor 32e is reduced, and the collector current IC_2 is also reduced. That is, the voltage Vd applied to the gain control terminal 10c of the amplifier 10 becomes smaller, and the gain of the amplifier 10 becomes smaller than the maximum gain (the gain signal becomes smaller than the maximum gain signal).
  • the output of the output power control device 2 is automatically controlled (ALC: Automatic Level Control).
  • hFE_1 and hFE_2 are current amplification factors of the first bipolar transistor 32b and the second bipolar transistor 32e
  • VFB_1 and VFB_2 are base-emitter voltages of the first bipolar transistor 32b and the second bipolar transistor 32e
  • Vz is a voltage of the Zener diode 31b.
  • Zener voltages R2 and R3 are resistance values of the second resistor 32c and the resistor 31a.
  • the gain control unit 32 can be configured by a depletion type MOSFET.
  • the anode of the diode 21b in the detection unit 21 is connected to the filter unit 22 side.
  • the detection signal G3 becomes a negative polarity signal.
  • the base terminal of the depletion type MOSFET is connected to the output of the voltage level detector 31 (the cathode of the Zener diode 31b), the drain terminal is connected to the power source VD, and the source terminal is connected to the drain terminal of the amplifier 10.
  • the voltage level detector 31 the cathode of the Zener diode 31b
  • the drain terminal is connected to the power source VD
  • the source terminal is connected to the drain terminal of the amplifier 10.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Control Of Amplification And Gain Control (AREA)
  • Amplifiers (AREA)

Abstract

La présente invention concerne un dispositif de commande de puissance de sortie qui n'est pas coûteux et présente une configuration simple dans laquelle une miniaturisation et une réduction de poids peuvent être réalisées. Le dispositif de commande de puissance de sortie est pourvu des éléments suivants : un amplificateur qui amplifie un signal d'entrée en fonction d'un signal de commande entré dans un terminal de commande de gain ; un circuit détecteur qui détecte une sortie de l'amplificateur et produit en sortie celle-ci sous forme de signal de détection ; et un circuit de commande qui comprend une diode Zener qui reçoit en tant qu'entrée le signal de détection, et si la tension détectée est inférieure à une tension Zener de la diode Zener, le circuit de commande réduit le signal de commande selon l'amplitude du signal de détection et produit en sortie le signal de commande, et si le signal de détection est supérieur à la tension de Zener, le circuit de commande produit en sortie le signal de commande d'une valeur minimum prescrite.
PCT/JP2015/004676 2014-09-26 2015-09-14 Dispositif de commande de puissance de sortie WO2016047090A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016549930A JP6386573B2 (ja) 2014-09-26 2015-09-14 出力電力制御装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-197159 2014-09-26
JP2014197159 2014-09-26

Publications (1)

Publication Number Publication Date
WO2016047090A1 true WO2016047090A1 (fr) 2016-03-31

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ID=55580641

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2015/004676 WO2016047090A1 (fr) 2014-09-26 2015-09-14 Dispositif de commande de puissance de sortie

Country Status (2)

Country Link
JP (1) JP6386573B2 (fr)
WO (1) WO2016047090A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54136260A (en) * 1978-03-01 1979-10-23 Saint Gobain Automotive active window galss atnenna
JPS54140442A (en) * 1978-04-21 1979-10-31 Seiko Instr & Electronics Ltd Automatic sensitivity control circuit for receiver
JPH05191180A (ja) * 1991-07-19 1993-07-30 Nec Corp 高周波送信装置の出力レベル制御回路
JPH09294033A (ja) * 1996-04-26 1997-11-11 Sanyo Electric Co Ltd 電力増幅装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59175207A (ja) * 1983-03-24 1984-10-04 Nec Corp 高周波電力増幅器における過電圧・サ−ジ電圧保護回路
JPS6374817U (fr) * 1986-11-05 1988-05-18
JPH01321709A (ja) * 1988-06-23 1989-12-27 Mitsubishi Electric Corp 電力増幅器
JPH02126421U (fr) * 1989-03-28 1990-10-18

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54136260A (en) * 1978-03-01 1979-10-23 Saint Gobain Automotive active window galss atnenna
JPS54140442A (en) * 1978-04-21 1979-10-31 Seiko Instr & Electronics Ltd Automatic sensitivity control circuit for receiver
JPH05191180A (ja) * 1991-07-19 1993-07-30 Nec Corp 高周波送信装置の出力レベル制御回路
JPH09294033A (ja) * 1996-04-26 1997-11-11 Sanyo Electric Co Ltd 電力増幅装置

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Publication number Publication date
JPWO2016047090A1 (ja) 2017-06-22
JP6386573B2 (ja) 2018-09-05

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