WO2016042408A3 - Compositions d'attaque chimique de nitrure de titane ayant une compatibilité avec le germaniure de silicium et le tungstène - Google Patents
Compositions d'attaque chimique de nitrure de titane ayant une compatibilité avec le germaniure de silicium et le tungstène Download PDFInfo
- Publication number
- WO2016042408A3 WO2016042408A3 PCT/IB2015/002015 IB2015002015W WO2016042408A3 WO 2016042408 A3 WO2016042408 A3 WO 2016042408A3 IB 2015002015 W IB2015002015 W IB 2015002015W WO 2016042408 A3 WO2016042408 A3 WO 2016042408A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- compositions
- tungsten
- titanium nitride
- compatability
- silicon germanide
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 title abstract 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052721 tungsten Inorganic materials 0.000 title abstract 2
- 239000010937 tungsten Substances 0.000 title abstract 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 title 1
- 238000005530 etching Methods 0.000 title 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 239000003112 inhibitor Substances 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
L'invention concerne des compositions utiles pour l'élimination sélective de nitrure de titane et/ou de matières résiduelles d'attaque chimique de résine photosensible par rapport à des matériaux conducteurs métalliques, par exemple, le tungstène et le cuivre, et isolants d'un dispositif microélectronique sur lequel se trouve ces matières. Les compositions contiennent au moins un oxydant, au moins un agent d'attaque chimique, et au moins un solvant organique, et peuvent contenir divers inhibiteurs de corrosion pour assurer la sélectivité.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462051629P | 2014-09-17 | 2014-09-17 | |
US62/051,629 | 2014-09-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2016042408A2 WO2016042408A2 (fr) | 2016-03-24 |
WO2016042408A3 true WO2016042408A3 (fr) | 2016-05-12 |
Family
ID=55533965
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2015/002015 WO2016042408A2 (fr) | 2014-09-17 | 2015-09-16 | Compositions d'attaque chimique de nitrure de titane ayant une compatibilité avec le germaniure de silicium et le tungstène |
Country Status (2)
Country | Link |
---|---|
TW (1) | TW201619354A (fr) |
WO (1) | WO2016042408A2 (fr) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107229193B (zh) * | 2017-07-25 | 2019-04-23 | 上海新阳半导体材料股份有限公司 | 一种清洗剂、其制备方法和应用 |
CN107357143B (zh) | 2017-07-25 | 2018-06-19 | 上海新阳半导体材料股份有限公司 | 一种清洗剂、其制备方法和应用 |
KR20200110335A (ko) * | 2018-01-16 | 2020-09-23 | 가부시키가이샤 도쿠야마 | 차아염소산 이온을 포함하는 반도체 웨이퍼의 처리액 |
KR102487940B1 (ko) * | 2018-03-19 | 2023-01-16 | 삼성디스플레이 주식회사 | 식각액 조성물 및 이를 이용한 금속 패턴과 어레이 기판의 제조 방법 |
WO2019192866A1 (fr) | 2018-04-04 | 2019-10-10 | Basf Se | Compositions contenant de l'imidazolidinethione destinées à l'élimination de résidus de post-polissage et/ou à la gravure oxydative d'une couche ou d'un masque comprenant de l'étain |
CN108615813B (zh) * | 2018-04-19 | 2021-07-16 | 苏州大学 | 基于一维有机无机杂化聚合物链的电存储器件及其制备方法 |
CN112384597A (zh) * | 2018-07-06 | 2021-02-19 | 恩特格里斯公司 | 选择性蚀刻材料的改进 |
US11017995B2 (en) | 2018-07-26 | 2021-05-25 | Versum Materials Us, Llc | Composition for TiN hard mask removal and etch residue cleaning |
CN113122267A (zh) * | 2019-12-31 | 2021-07-16 | 安集微电子科技(上海)股份有限公司 | 一种促进剂组合物在去除铜大马士革工艺中氮化钛的应用 |
CN116096837A (zh) * | 2020-08-13 | 2023-05-09 | 恩特格里斯公司 | 氮化物蚀刻剂组合物和方法 |
CN112522707B (zh) * | 2020-11-20 | 2021-12-03 | 湖北兴福电子材料有限公司 | 一种高选择比的钨蚀刻液 |
CN114316990B (zh) * | 2021-12-09 | 2023-04-07 | 湖北兴福电子材料股份有限公司 | 一种高蚀刻锥角的锗蚀刻液 |
US20230383185A1 (en) * | 2022-05-27 | 2023-11-30 | Entegris, Inc. | Etchant composition and method |
CN115011347B (zh) * | 2022-06-30 | 2023-12-29 | 湖北兴福电子材料股份有限公司 | 一种氮化铝和钨的选择性蚀刻液 |
CN115044376B (zh) * | 2022-06-30 | 2023-12-29 | 湖北兴福电子材料股份有限公司 | 一种掺钪氮化铝蚀刻液及其应用 |
CN115291483B (zh) * | 2022-09-02 | 2023-08-29 | 昆山晶科微电子材料有限公司 | 一种半导体剥离液及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101398638A (zh) * | 2007-09-29 | 2009-04-01 | 安集微电子(上海)有限公司 | 一种光刻胶清洗剂 |
US20100035436A1 (en) * | 2008-08-08 | 2010-02-11 | Go-Un Kim | Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device |
WO2013101907A1 (fr) * | 2011-12-28 | 2013-07-04 | Advanced Technology Materials, Inc. | Compositions et procédés pour l'attaque sélective de nitrure de titane |
WO2014138064A1 (fr) * | 2013-03-04 | 2014-09-12 | Advanced Technology Materials, Inc. | Compositions et procédés pour graver sélectivement du nitrure de titane |
-
2015
- 2015-09-16 WO PCT/IB2015/002015 patent/WO2016042408A2/fr active Application Filing
- 2015-09-17 TW TW104130763A patent/TW201619354A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101398638A (zh) * | 2007-09-29 | 2009-04-01 | 安集微电子(上海)有限公司 | 一种光刻胶清洗剂 |
US20100035436A1 (en) * | 2008-08-08 | 2010-02-11 | Go-Un Kim | Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device |
WO2013101907A1 (fr) * | 2011-12-28 | 2013-07-04 | Advanced Technology Materials, Inc. | Compositions et procédés pour l'attaque sélective de nitrure de titane |
WO2014138064A1 (fr) * | 2013-03-04 | 2014-09-12 | Advanced Technology Materials, Inc. | Compositions et procédés pour graver sélectivement du nitrure de titane |
Also Published As
Publication number | Publication date |
---|---|
WO2016042408A2 (fr) | 2016-03-24 |
TW201619354A (zh) | 2016-06-01 |
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