WO2016036179A1 - Appareil d'affichage à fonction de détection d'image - Google Patents

Appareil d'affichage à fonction de détection d'image Download PDF

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Publication number
WO2016036179A1
WO2016036179A1 PCT/KR2015/009331 KR2015009331W WO2016036179A1 WO 2016036179 A1 WO2016036179 A1 WO 2016036179A1 KR 2015009331 W KR2015009331 W KR 2015009331W WO 2016036179 A1 WO2016036179 A1 WO 2016036179A1
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WIPO (PCT)
Prior art keywords
sensing
sensing unit
unit
display
layer
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PCT/KR2015/009331
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English (en)
Korean (ko)
Inventor
김종욱
전호식
성승규
최우영
이준석
윤주안
Original Assignee
크루셜텍(주)
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Priority claimed from KR1020150124781A external-priority patent/KR101758047B1/ko
Application filed by 크루셜텍(주) filed Critical 크루셜텍(주)
Publication of WO2016036179A1 publication Critical patent/WO2016036179A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements

Definitions

  • the present invention relates to a display device, and more particularly to a display device capable of sensing an image.
  • the touch screen panel is a device for inputting a user's command by touching a character or a figure displayed on a screen of the image display device with a human finger or other contact means, and is attached to the image display device.
  • the touch screen panel electrically converts a contact position touched by a human finger or the like.
  • the electrically signal is used as an input signal.
  • touch detection methods such as resistive film, optical, capacitive, and ultrasonic methods.
  • the capacitance changes when the touch generating means contacts the screen of the display device. Detects whether a touch occurs using the.
  • the capacitive touch screen panel can detect a touch of a human finger, a conductive touch pen, or the like.
  • a device for sensing an image such as fingerprint recognition
  • a device for sensing an image such as fingerprint recognition
  • the present invention has been made on the basis of the technical background as described above, and an object of the present invention is to provide a display device capable of sensing an image in which limitations of additional sensor size and placement position are minimized.
  • the sensing unit may include a plurality of sensing units including a sensing layer formed of an organic material, and the plurality of sensing units include the sensing layers formed of different first, second, and third colors.
  • a first sensing unit, a second sensing unit and a third sensing unit may be included.
  • the display unit may include a plurality of display units including a light emitting layer formed of an organic material, and the sensing units are disposed above the display units, and the projection light generated by the display units transmits the sensing units. can do.
  • the display unit may include a plurality of display units including a liquid crystal layer and a backlight unit that emits light toward the display unit, wherein the sensing units are disposed above the display units and the backlight unit of the display unit.
  • the projection light generated at may pass through the display units and the sensing units.
  • one display unit may overlap with one sensing unit.
  • At least two display units may overlap one sensing unit.
  • first sensing unit, the second sensing unit, and the third sensing unit may be alternately disposed and arranged in a matrix form.
  • the display unit may include one sensing unit and at least one display unit overlapping the sensing unit, and the sensing unit and at least one display unit overlapping the sensing unit form a unit unit. Units may be arranged in a matrix form on the display area.
  • the width and length of the first sensing unit, the second sensing unit and the third sensing unit may be included in the range of 20 um to 50 um.
  • the sensing unit may be disposed between the first sensing unit, the second sensing unit, and the third sensing unit to respectively pass through the first sensing unit, the second sensing unit, and the third sensing unit. It may further include a partition for suppressing interference between the projection light.
  • the first color may be red
  • the second color may be green
  • the third color may be blue
  • the protective layer may be formed of a transparent substrate, and the display unit may include a light emitting layer disposed on the protective layer, and the sensing unit may be disposed between the protective layer and the light emitting layer and formed of an organic material to sense the reflected light. It may include a sensing layer for.
  • the display apparatus may further include a transparent substrate on which the display unit is disposed, wherein the display unit includes a light emitting layer disposed on the transparent substrate, and the sensing unit is disposed on the light emitting layer and formed of an organic material to sense the reflected light. It may include a sensing layer for.
  • the display unit may include a first substrate of transparent material and a light emitting layer disposed on the first substrate and formed of an organic material, and the sensing unit may be disposed on the second substrate and the second substrate of transparent material. And a sensing layer formed of a material, wherein the second substrate of the sensing unit may be positioned on the light emitting layer of the display unit.
  • the display unit may be disposed on the first substrate of the transparent material, the liquid crystal layer disposed on the first substrate and the lower side of the first substrate to emit the projection light toward the liquid crystal layer.
  • the sensing unit may include a second substrate made of a transparent material and a sensing layer disposed on the second substrate and formed of an organic material.
  • the display unit and the sensing unit may be disposed in the vertical direction.
  • the sensing unit may include a sensing area in which the sensing unit is formed and a non-sensing area in which the sensing area is not formed, and the sensing area and the non-sensing area have different heights.
  • the sensing region and the non-sensing region may include a short circuit region formed at a lower height, or an insulating layer, and be formed to have a height higher than that of the sensing region and the non-sensing region. Can be.
  • the shorting region or the insulating region may insulate the sensing region from the non-sensing region.
  • the sensing unit may generate different measured voltage values according to differences in energy levels of reflected light reflected on the ridges and valleys formed in the fingerprint of the user in contact with the protective layer, and the fingerprint may be generated from the difference in the measured voltage values. Can sense an image.
  • the sensing unit may include a sensing unit formed of a photodiode, and the sensing unit may generate an output signal having a different voltage value according to the energy level of the reflected light.
  • the sensing unit may be disposed in whole or in part of the display area.
  • constraints of the size and the position of the image sensor may be minimized.
  • FIG. 1 is a diagram illustrating an electronic device in which a display device capable of sensing an image is disposed according to an exemplary embodiment.
  • FIG. 3 is a cross-sectional view illustrating a part of a display device capable of sensing an image according to another exemplary embodiment of the present invention.
  • FIG. 5 is a diagram illustrating an equivalent circuit of a display device capable of sensing an image according to another exemplary embodiment of the present invention.
  • FIG. 6 is a cross-sectional view illustrating a part of a display device capable of sensing an image according to another exemplary embodiment of the present invention.
  • FIG. 7 is a cross-sectional view illustrating a sensing unit of a display device according to still another embodiment of the present invention.
  • FIG. 8 is a diagram illustrating a display device in which the sensing unit of FIG. 7 is disposed.
  • FIG. 9 is a cross-sectional view illustrating a part of a display device according to yet another exemplary embodiment.
  • FIG. 10 is a cross-sectional view illustrating a part of a display device capable of sensing an image according to another exemplary embodiment of the present invention.
  • FIG. 11 is a view illustrating a display unit of the display device of FIG. 10.
  • FIG. 12 is a diagram illustrating an equivalent circuit of the display device of FIG. 10.
  • FIG. 13 is a diagram illustrating an equivalent circuit of a sensing unit of a display device according to still another embodiment of the present invention.
  • FIG. 14 is a cross-sectional view illustrating a display device capable of sensing an image according to another exemplary embodiment of the present invention.
  • 15 is an exemplary view illustrating reflection of light by a finger in a display device according to still another embodiment of the present invention.
  • 16 is a schematic diagram illustrating an arrangement of a sensing unit of a sensing unit in a display device according to still another embodiment of the present invention.
  • FIG. 17 is a schematic diagram illustrating fingerprint sensing through a light source having a specific wavelength in a display device according to an exemplary embodiment of the present invention.
  • FIG. 19 is a cross-sectional view of a sensing unit of a display device according to still another embodiment of the present invention.
  • FIG. 20 is a diagram illustrating a configuration of a sensing unit of a display device according to still another embodiment of the present invention.
  • FIG. 1 is a diagram illustrating an electronic device in which a display device capable of sensing an image is disposed according to an exemplary embodiment.
  • the electronic device 10 includes a display device DP.
  • the display device DP is formed on one surface of the electronic device 10.
  • the display device DP is formed on the front surface of the electronic device 10 and implemented as a touch screen panel which simultaneously performs a function as an input device. Can be.
  • the display device DP includes a display area DP 1 in which an image is displayed and a peripheral area DP 2 surrounding the display area DP 1 .
  • the display device DP performs not only the touch generating means (for example, a finger or the like) contact and the contact location but also a recognition function for the fingerprint of the finger.
  • the touch generating means for example, a finger or the like
  • the peripheral area DP 2 of the display device DP overlaps the bezel of the electronic device 10 of the display device DP.
  • the peripheral area DP 2 is the display area DP 1.
  • FIG. 2 is a diagram illustrating a fingerprint sensing process of a display device capable of sensing an image according to an exemplary embodiment of the present invention.
  • the projection light L 1 generated by the display unit 110 is incident on the finger and then reflected, and the reflected light L 2 generated by the sensing unit is sensed. Incident on 120.
  • the reflected light L 2 incident on the sensing unit 120 generates a photoelectric effect.
  • the reflected light L 2 is generated at different energy levels by the projection light L 1 emitted from the display unit 110 and the reflected light L 2 reflected from the finger. The corresponding photoelectric effect occurs.
  • the value of the energy of the reflected light (L 2 ) reflected from the finger is the bone line reflected from the ridge reflected light energy (E 2, R ) and valley (Valley) of the reflected light reflected from the ridge (Ridge) of the finger fingerprint Reflected light energy E 2, V.
  • the sensing unit 120 is based on the difference between the energy of the ridge reflected light energy (E 2, R ) and the bone line reflected light energy (E 2, V ) formed differently by the height difference of the ridge and the valley of the fingerprint. You can create an image.
  • FIG. 3 is a cross-sectional view illustrating a part of a display device capable of sensing an image according to another exemplary embodiment of the present invention.
  • the display unit and the sensing unit of the display device 200 each include a plurality of display units and a plurality of sensing units, and the display device 200 includes blue, green and It may be an organic light emitting diode (OLED) device that displays an image by emitting red light.
  • OLED organic light emitting diode
  • the display device 200 is positioned in a display area and is configured to generate a projection light for displaying an image, and is disposed in any one direction above or below the light emitting part, and the projection light generated by the light emitting part is disposed. And a sensing unit for transmitting the light in one direction and detecting the reflected light transmitted through the protective layer and the reflected light passing through the protective layer, and generating an image based on the detected energy level of the reflected light.
  • the projection light sequentially passes through the sensing unit and the protective layer.
  • the display device 200 may include a substrate 210, a thin film transistor array layer 220, a first electrode layer 230, and a light emitting layer 240 formed of a transparent material, and a charge generation layer 250. ),
  • the sensing layer including the sensing layer 260, the second electrode layer 270, and the cover window 280.
  • the light emitting layer 240 and the sensing layer 260 of the display device 200 may be disposed in the vertical direction and may be electrically connected to each other, and the light emitting layer 240 and the sensing layer 260 may have the same encapsulation layer. It may be sealed by (not shown).
  • the substrate 210 may be, for example, polyimide, polyimide, polyethylene terephthalate, polyethylene naphthalate (PEN), polycarbonate, polyester sulfone (PES), or the like. It may be formed of a light transmissive material.
  • the thin film transistor array layer 220 disposed on one surface of the substrate 210 may include a thin film transistor circuit for display and a thin film transistor circuit for read out.
  • the first electrode 230 is disposed on the thin film transistor array layer 220, and the emission layer 240, the charge generation layer 250, the sensing layer 260, and the second electrode layer 270 are disposed on the first electrode 230. And cover window 280 are disposed in this order.
  • the first electrode 230 and the second electrode 260 may be formed of a conductive oxide having a predetermined light transmittance and sheet resistance.
  • it may include any one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), aluminum tin oxide (AlTO), and fluorine-doped tin oxide (FTO).
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • ZnO zinc oxide
  • AlTO aluminum tin oxide
  • FTO fluorine-doped tin oxide
  • the first electrode 230 or the second electrode 260 may have a predetermined light transmittance
  • the first electrode 230 or the second electrode 260 may have the same or different light transmittances.
  • the first electrode 230 or the second electrode 260 may be a conductive oxide having a predetermined sheet resistance.
  • the first electrode 230 may have a predetermined reflectance to increase the amount of light reaching the fingerprint surface.
  • a reflective material of the cathode electrode a low resistance reflective film is formed of a metal such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a compound thereof, and then ITO,
  • the electrode may be formed using a metal oxide such as IZO, ZnO or In 2 O 3 .
  • the second electrode 270 When the second electrode 270 is formed of a transparent material, a metal having a small work function, that is, Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, or a compound thereof, is deposited on a semi-permeable layer, and then deposited thereon. Metal oxides such as ITO, IZO, ZnO, or In 2 O 3 may be used to have a dual structure in which an auxiliary electrode or a bus electrode line is provided as a material for forming a transparent electrode. When the second electrode 270 is used as a reflective electrode, for example, Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, or a compound thereof may be formed by full deposition.
  • a metal having a small work function that is, Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, or a compound thereof.
  • a cover window 270 made of a transparent material may be provided on the upper side of the second electrode 270 to protect the components of the display device 1 disposed below from an external impact.
  • the light emitting unit generating projection light to display an image in the display device 200 includes a light emitting layer 240 disposed on the first electrode 220, and emits red, green, or blue light according to the display driving signal. By emitting light, a predetermined image can be realized.
  • the sensing unit senses the reflected light reflected by the projected light in contact with an external object and includes a sensing layer 260 formed of an organic material.
  • the sensing unit may include at least one of a photodiode, a photoresistor, and a phototransistor.
  • the charge generation layer 250 provided between the light emitting layer 240 and the sensing layer 260 serves to transfer charges to the light emitting layer 240 and the sensing layer 260.
  • the first electrode 230 activates the charge generating layer 250 so that the light emitting layer 240 emits light.
  • the projection light generated by the emission layer 240 may be emitted to the outside through the charge generation layer 250, the organic semiconductor layer 260, and the second electrode 270.
  • the sensing layer 260 When the sensing driving signal is applied to the first electrode 230 through the thin film transistor array layer 220, the sensing layer 260 is emitted from the light emitting layer 240, and the projection light of the projection light L 1 having the first wavelength is emitted. Energy E 1 may be primarily sensed.
  • the sensing layer 260 may secondly sense the reflected light energy E 2 of the reflected light L 2 reflected by the projection light L 1 from the subject S.
  • the display device 1 processes the first-sense projected light energy E 1 as noise and based on the reflected light energy E 2 of the reflected light L 2 reflected from the subject S.
  • the imaging process can be performed on the subject S, that is, the user's fingerprint.
  • the sensing layer 260 has a narrow full width at half maximum (FWHM) in the wavelength range absorbed among the second wavelengths in order to sense a fingerprint, and has a light in a wavelength range other than the absorption wavelength range. It may include a p-type semiconductor and an n-type semiconductor formed of a predetermined organic material having high transmittance.
  • the projection light L 1 emitted from the light emitting layer 240 is reflected from the subject S such as a finger and is incident on the organic semiconductor layer 360 via the second electrode 270 again.
  • the sensing layer 260 may generate a current according to a photoelectric effect based on the reflected light energy E 2 of the reflected light L 2 of the received second wavelength, and the display device 100 according to the present embodiment may include a sensing circuit ( (Not shown) may generate image data of a finger fingerprint based on the current.
  • the thin film transistor array layer 220 to the charge generation layer 250 operate as a display unit displaying an image, and the charge generation layer 250
  • the second electrode 270 may operate as a sensor unit that senses a fingerprint.
  • the user's fingerprint that is, the user's fingerprint
  • the user's fingerprint may be sensed on the display without a separate fingerprint module.
  • the display unit of the display device 200 may be formed in the entire display area of the display device, and the sensing unit may be formed in the entire display area or only a part of the display area of the display device.
  • the organic material of the sensing layer 260 may be a material that exhibits excellent light absorption characteristics in the entire wavelength range of visible light or a material that absorbs a predetermined wavelength range.
  • a predetermined material having a narrow full width at half maximum (FWHM) and high transmittance outside the absorption wavelength region may be applied.
  • the sensing layer 260 may be formed of an organic material having a viewing angle within a predetermined range and a half width of a wavelength to be absorbed by using this characteristic.
  • cover window 280 is a protective layer for protecting the internal structure of the display device 200 from the outside, and the user's finger may contact the cover window 280.
  • FIG. 5 is a diagram illustrating an equivalent circuit of a display device capable of sensing an image according to another exemplary embodiment of the present invention.
  • an equivalent circuit C 1 of the display device 1 includes a sensing unit PD 1 , a transistor T 1 , a display unit OLED, and a reset circuit RST. do.
  • the sensing unit PD 1 may be formed of an element that converts light energy into electrical energy, such as a photodiode. When light reaches the sensing unit PD 1 , current flows.
  • the cathode of the sensing unit PD 1 is connected with the source of the switch transistor T 1 , and the anode is connected with the display OLED.
  • the switch transistor T 1 has a gate electrode connected to the scan line SL, a drain electrode connected to the readout line RL, and a source electrode connected to the cathode of the sensing unit PD 1 .
  • the switch transistor T 1 may be implemented as a transistor such as amorphous silicon (a-Si: H), polycrystalline silicon (Poly Silicon, Poly-Si), an oxide transistor, or the like.
  • a first electrode of both electrodes forming the sensing capacitor Cst 1 may be connected to the source electrode of the switch transistor T 1 , and the second electrode may be connected to the ground potential.
  • the reset circuit RST includes a comparator AMP 1 and a comparison capacitor Cst 2 .
  • the projection light L 1 emitted from the display portion OLED comes into contact with an external subject such as a user's fingerprint, and then the reflected reflected light L 2 enters the sensing unit PD 1 of the equivalent circuit C 1 .
  • the equivalent circuit (C 1) the reflected light (L 2), and sensing will be described a method for delivering a signal corresponding to the energy magnitude of the sensed reflected light (L 2) as follows.
  • the projection light of the display portion OLED is reflected by the fingerprint of the user, converted into an electrical signal through the sensing unit PD 1 , and charged in the sensing capacitor Cst 1 .
  • the switch transistor T 1 is turned on by the scan signal, the ridge line is formed through charge sharing between the sensing capacitor Cst 1 and the comparison capacitor Cst 2 of the reset circuit RST.
  • the difference between the voltage between the ridge and the valley is obtained to form an image of the fingerprint that the user contacts the display device based on the voltage difference.
  • the sensing unit PD 1 generates an output signal having a different voltage value according to the energy level of the reflected light
  • the display device capable of sensing an image according to the present embodiment is configured to generate the fingerprint signal according to the output signal. Images of ridges and valleys can be sensed.
  • the display OLED may include a light emitting device such as an organic light emitting diode, and the light emitting device may be connected to a scan line (not shown) and a data line (not shown) for transmitting a display signal.
  • a light emitting device such as an organic light emitting diode
  • the display unit OLED may be electrically connected to the sensing unit PD 1 .
  • the display unit OLED is illustrated as being connected in series with the sensing unit PD 1 , the display unit OLED is connected in parallel with the sensing unit PD 1 , or through the other configuration. It is not limited to the configuration connected in series, such as connected with PD 1 ).
  • FIG. 6 is a cross-sectional view illustrating a part of a display device capable of sensing an image according to another exemplary embodiment of the present invention.
  • the display device may be a bottom-emitting display device in which projection light emitted from the emission layer passes through the substrate.
  • the display of FIG. 3 will be described below. The differences from the device will be described.
  • the display device 300 includes a substrate 320 and a thin film provided on the cover window 310 and the cover window 310, which are the protective layers to which the finger S contacts.
  • the transistor array layer 330, the first electrode 340, the sensor layer 350, the charge generation layer 360, the light emitting layer 370, and the second electrode 380 are stacked in this order.
  • the cover window 310 may be omitted, and when the cover window 310 is omitted, the finger S may be in contact with the substrate 320.
  • the sensing unit may be a front sensing type, a rear sensing type, or a double sensing type according to various embodiments.
  • the projection light emitted from the display unit may be emitted through at least one of the first electrode and the second electrode, and the sensing unit is positioned in the direction in which the projection light is emitted.
  • the cover window 310 which is the protective layer, may be omitted, and the substrate 320 is formed of the protective layer where the fingers are in contact.
  • FIG. 7 is a cross-sectional view illustrating a sensing unit of a display device according to still another embodiment of the present invention.
  • the first electrode 415 or the second electrode 416 may be a cathode or an anode.
  • the first electrode 415 may be a cathode and the second electrode 416 may be an anode.
  • the cathode has a lower work function than the HOMO / LUMO HOMO (HOMO) / Lowest Unoccupiec Molecular Orbital (LUMO) of the sensing layer 411 to facilitate the movement of electrons.
  • HOMO HOMO
  • LUMO Lowest Unoccupiec Molecular Orbital
  • the anode uses a material having a higher work function than HOMO / LUMO of the sensing layer 411 so that the movement of holes can be performed smoothly.
  • the first electrode 415 and the second electrode 416 may be formed of a conductive oxide having a predetermined light transmittance and sheet resistance.
  • it may include any one of metal oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), aluminum tin oxide (AlTO), and fluorine-doped tin oxide (FTO).
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • ZnO zinc oxide
  • AlTO aluminum tin oxide
  • FTO fluorine-doped tin oxide
  • the first electrode 415 and the second electrode 416 may have a predetermined light transmittance
  • the first electrode 415 and the second electrode 416 may have the same or different light transmittances.
  • the first electrode 420 or the second electrode 430 may be a conductive oxide having a predetermined sheet resistance.
  • the sensing layer 411 includes an organic layer 412, and the organic layer 412 includes a donor layer and an acceptor layer adjacent to each other to sense the received light.
  • the organic layer 412 absorbs light incident from the first electrode 415 or the second electrode 416 to generate excitons in the donor layer.
  • the excitons dissociate into holes and electrons at the interface between the donor layer and the acceptor layer.
  • Dissociated holes move to the anode side and dissociated electrons move to the cathode side to generate a current.
  • the generated current represents different current values according to the fingerprint shape of the ridge and valley of the fingerprint, and the fingerprint can be sensed using the difference in the current values.
  • the organic layer 412 has a narrow full width at half maximum (FWHM) with respect to the wavelength of the absorbed light, and a predetermined organic material having high light transmittance may be applied in a wavelength range other than the absorption wavelength range. .
  • FWHM full width at half maximum
  • the organic layer 412 may be formed of a p-type semiconductor and an n-type semiconductor.
  • the p-type semiconductor is N, N-dimethyl-quinacridone (N, N'-dimethylquinacridone, NNQA), diindenoperylene, dibenzo ⁇ [f, f ']-4,4', 7 , 7'-tetraphenyl ⁇ diindeno [1,2,3-cd: 1 ', 2', 3'-lm] perylene (dibenzo ⁇ [f, f ']-4,4', 7,7 '-tetraphenyl ⁇ diindeno [1,2,3-cd: 1', 2 ', 3'-lm] perylene), but is not limited thereto.
  • the n-type semiconductor may include, but is not limited to, a compound such as dicyanovinylterthiophene (DCV3T), fullerene, fullerene derivatives, and perylene diimide.
  • DCV3T dicyanovinylterthiophene
  • fullerene fullerene derivatives
  • perylene diimide perylene diimide
  • Compounds constituting the p-type semiconductor and the n-type semiconductor may be formed by a method such as a spin coater and an ink jet printer using a co-deposition, vacuum thermal deposition, a solution process.
  • the structure of the organic layer 412 formed in this manner is a bi-layer deposition structure for sequentially depositing a p-type semiconductor and an n-type semiconductor or a bulk heterojunction deposition structure using a mixed solution. It can be formed as. It may also be composed of any one of p-type layer / n-type layer, p-type layer / I layer, p-type layer / I layer / n-type layer or I-layer / n-type layer.
  • the sensing layer 411 may further include charge auxiliary layers 413 and 414 between the organic layer 412 and the electrodes 415 and 416, respectively.
  • the charge auxiliary layers 413 and 414 may further facilitate the movement of holes and electrons dissociated in the organic layer 20 to increase sensing efficiency.
  • the first charge auxiliary layer 413 and the second charge auxiliary layer 414 facilitate the transport of holes injected from the hole injection layer (HIL) and the hole injection layer to facilitate the injection of holes received from the anode.
  • Hole transporting layer (HTL) to facilitate
  • electron blocking layer (EBL) to block the movement of electrons
  • electron injecting layer (EIL) to facilitate injection of electrons received from the cathode
  • An electron transporting layer (ETL) for facilitating the transport of electrons injected from the electron injection layer
  • HBL hole blocking layer
  • HBL hole blocking layer
  • HBL hole blocking layer
  • HBL hole blocking layer
  • HBL hole blocking layer
  • HBL hole blocking layer
  • HBL hole blocking layer
  • HBL hole blocking layer
  • HBL hole blocking layer
  • HBL hole blocking layer
  • the first charge auxiliary layer 413 may be an electron injection layer, an electron transport layer, or a hole blocking layer
  • the second charge auxiliary layer ( 414 may be a hole injection layer, a hole transport layer or an electron blocking layer.
  • the electron injection layer and the electron transport layer uses a material having high electron mobility for smooth movement of the electrons.
  • a material having a value between the LUMO energy level of the organic layer 412 and the cathode work function is used in consideration of the HOMO / LUMO energy level with the organic layer 412.
  • the hole injection layer and the hole transport layer uses a material having high hole mobility for smooth movement of the hole.
  • a material having a value between the HOMO energy level of the organic layer 412 and the anode work function is used for the hole injection layer and the hole transport layer in consideration of the HOMO / LUMO energy level with the organic layer 412.
  • each of the electron injection layer, the electron transport layer, the hole injection layer, and the hole transport layer is formed to have a light transmittance of 70%.
  • each of the electron injection layer, the electron transport layer, the hole injection layer, and the hole transport layer is formed of a material that transmits light in the wavelength band where the organic layer 412 absorbs.
  • the electron transport layer is, for example, 1,4,5,8-naphthalene-tetracarboxylic dianhydride (1,4,5,8-naphthalenetetracarboxylicdianhydride (NTCDA), bathocuproine (BCP), LiF, Alq3, Gaq3, Inq3, Znq2, Zn (BTZ) 2, BeBq2, and a combination thereof may be included, but is not limited thereto.
  • HBL hole blocking layer
  • NTCDA 1,4,5,8-naphthalene-tetracarboxylic dianhydride
  • DCV3T dicyanovinyl terthiophene
  • BCP vasocuproin
  • LiF LiF
  • BeBq2 BeBq2
  • a combination thereof may be included, but is not limited thereto.
  • the hole transport layer is, for example, poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) (poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate), PEDOT: PSS), poly Arylamine, poly (N-vinylcarbazole) (poly (Nvinylcarbazole), polyaniline, polypyrrole, N, N, N ', N'-tetrakis (4-methoxyphenyl) -benzidine (N , N, N ', N'-tetrakis (4-methoxyphenyl) -benzidine, TPD), 4-bis [N- (1-naphthyl) -N-phenyl-amino] biphenyl (4-bis [N- ( 1-naphthyl) -N-phenyl-amino] biphenyl, ⁇ -NPD), m-MT
  • the electron blocking layer (EBL) may be, for example, poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) polyarylamine, poly (N-vinylcarbazole), poly (Nvinylcarbazole), polyaniline Polypyrrole, N, N, N ', N'-tetrakis (4-methoxyphenyl) -benzidine (N, N, N', N'-tetrakis (4-methoxyphenyl) -benzidine, TPD) 4-bis [N- (1-naphthyl) -N-phenyl-amino] biphenyl (4-bis [N- (1-naphthyl) -N-phenyl-amino] biphenyl, ⁇ -NPD), m-MTDATA , 4,4 ′, 4 ′′ -tris (N-carbazolyl) -triphenylamine (4,4 ′, 4 ′′
  • FIG. 8 is a diagram illustrating a display device in which the sensing unit of FIG. 7 is disposed.
  • the sensing unit 410 of the display device 400 may include a first sensing unit 410R, a second sensing unit 410G, and a first sensing unit including a red transparent organic layer, a green transparent organic layer, and a blue transparent organic layer, respectively. And three sensing units 410B.
  • the first sensing unit 410R, the second sensing unit 410G, and the third sensing unit 410B may be arranged in a matrix on the same plane, and the first sensing unit 410R and the second sensing unit 410G. ), And the partition wall 418 may be disposed between the third sensing units 410B.
  • the partition wall 418 suppresses optical interference between the projection light beams passing through the first sensing unit 410R, the second sensing unit 410G, and the third sensing unit 410B.
  • the light emitting unit 480 includes a plurality of light emitting units formed of pixels for displaying an image according to a display signal, and the plurality of light emitting units each include a first sensing unit 410R and a second sensing unit. 410G, and the third sensing unit 410B.
  • the light emitting units may be organic light emitting diodes emitting one color such as blue light or white light.
  • the display unit 480 when the display unit 480 includes a backlight unit (BLU) that provides a surface light source, the display unit 480 has a plurality of pixels between the backlight unit and the sensing unit 410, and the display signal.
  • the LCD may further include a liquid crystal part (not shown) for selectively transmitting the projection light emitted from the backlight unit for each pixel.
  • the liquid crystal part includes a plurality of display units including a liquid crystal layer and a color filter layer and arranged in a matrix.
  • the display unit may display an image by manipulating projection light provided from the backlight unit disposed on the rear side of the liquid crystal unit according to an external image signal.
  • FIG. 9 is a cross-sectional view illustrating a part of a display device according to yet another exemplary embodiment.
  • the display device according to the present exemplary embodiment differs only in the configuration of the display device of FIG. 8 from the arrangement of the sensing unit, and in other configurations is the same as that of the display device illustrated in FIG. 8.
  • the explanation focuses on the specific part.
  • the display device 500 includes a substrate 520, a thin film transistor array layer 530, a sensing unit 510, an encapsulation unit 540, and a display unit 580. ).
  • the sensing unit 510 includes a first sensing unit 510R, a second sensing unit 510G, and a third sensing unit 510B, each of which includes a red transparent organic layer, a green transparent organic layer, and a blue transparent organic layer.
  • the first sensing unit 510R, the second sensing unit 510G, and the third sensing unit 510B are disposed in the vertical direction.
  • FIG. 10 is a cross-sectional view illustrating a part of a display device capable of sensing an image according to another exemplary embodiment of the present invention.
  • the display unit 620 may be formed of a TFT-LCD or an OLED.
  • the sensing unit 610 scans an image, such as a fingerprint shape of a user, and detects light emitted from the display unit 620 to reflect an object to acquire an image. That is, the sensing unit 610 receives the reflected light.
  • the sensing unit 610 includes a plurality of first sensing units 610R, a second sensing unit 620G, and a third sensing unit 620B disposed on the same plane.
  • the first sensing unit 610R, the second sensing unit 620G, and the third sensing unit 620B convert one color of projection light generated by the display unit 620 into red, green, and blue light, respectively. It can act as a filter.
  • the display unit 620 forms projection light having only one color. That is, when the display unit 620 is formed of an OLED, the display unit 620 forms only blue or white light, and when the display unit 620 is a TFT-LCD, a separate color filter may not be formed on the display unit 620. have.
  • the sensing units 610R, 610G, and 620B of the sensing unit 610 are respectively a sensing unit side transparent substrate 611, a sensing unit side thin film transistor 612, a sensing unit side first transparent electrode 613, and a sensing layer 614. ), And may include a plurality of layers stacked in order of the second transparent electrode 615 on the sensing unit side. At this time, each element is composed of a high transparency material.
  • a thin film encapsulation layer 630 may be disposed on the uppermost layer.
  • the display device 600 does not have a separate cover window, and the encapsulation layer 630 may be the protective layer to which the user's finger is in contact.
  • the sensing layer 614 is formed of an organic material, and an intrinsic layer (I layer), a P / N type layer, and a P / P material and an N type material are manufactured using a co-deposited or mixed solution. It may be composed of various structures such as an I-type layer, an N / I layer.
  • the display unit 620 when the display unit 620 is formed of an organic light emitting diode, the display unit 620 may have a structure similar to that of the sensing unit 610.
  • the display device 600 has been described as a configuration in which the sensing unit 610 is added on the upper side of the display unit 620. However, the sensing unit 610 and the display unit 620 share one substrate, and the sensing layer of the sensing unit 610 is stacked on the light emitting layer or the liquid crystal layer of the display unit 600. A configuration formed of a tandem structure to be formed is also included in the embodiment of the present invention.
  • FIG. 11 is a view illustrating a display unit of the display device of FIG. 10.
  • the display unit 620 includes a display unit side transparent substrate 621, a display unit side transistor 622, a display unit side first transparent electrode 623, an emission layer 624 formed of an organic light emitting diode, and a display unit side agent. It includes a plurality of layers stacked in order of the two transparent electrodes (625).
  • the sensing unit side first transparent electrode 613 and the display unit side first transparent electrode 623 may be a cathode
  • the sensing unit side second transparent electrode 615 and the display unit side second transparent electrode 625 may be anodes.
  • the polarity may be reversed.
  • the sensing unit 610 and the display unit 620 are described as being formed on separate transparent substrates. However, as shown in FIGS. 2 to 6, the sensing unit is disposed on the light emitting layer of the display unit.
  • the sensing layer formed of an organic material may be formed in a tandem structure in which the sensing layers are stacked.
  • FIG. 12 is a diagram illustrating an equivalent circuit of the display device of FIG. 10.
  • the equivalent circuit C 2 of the sensing unit of the display device includes a sensing unit PD 2 , a transistor T 2 , and an initialization circuit RST.
  • the equivalent circuit C 2 of the sensing unit 610 of the display device according to the present exemplary embodiment is an equivalent circuit of the display device illustrated in FIG. 5 in another configuration except for a portion in which the configuration of the display portion OLED is excluded. the same as that of (C 1), a detailed description thereof will be omitted.
  • FIG. 13 is a diagram illustrating an equivalent circuit of a sensing unit of a display device according to still another embodiment of the present invention.
  • the equivalent circuit C 3 of the sensing unit according to the present embodiment differs in part from the configuration of the equivalent circuit C2 shown in FIG. 12, but in other configurations, the same is true in other configurations. It demonstrates centering on the characteristic part of an example.
  • the equivalent circuit C 3 includes a sensing unit PD, a first transistor T 31 , a second transistor T 32 , and a reset circuit RST.
  • the sensing unit PD 3 may be formed of an element that converts light energy into electrical energy, such as a photodiode. When light reaches the sensing unit PD 3 , current flows.
  • the cathode of the sensing unit PD 3 is connected to the gate electrode of the second transistor T 31 , and the anode is connected to the display OLED.
  • the sensing unit PD 3 may be implemented as an organic light emitting diode (OLED), a quantum dot (QD), or a transistor.
  • OLED organic light emitting diode
  • QD quantum dot
  • transistor a transistor
  • the gate electrode of the first transistor T 31 is connected to the scan line SL, the drain electrode is connected to the readout line RL, and the source electrode is connected to the drain electrode of the second transistor T 31 .
  • the gate electrode of the second transistor T 32 is connected to the cathode electrode of the sensing unit PD1, and the source electrode is connected to the input voltage VDD.
  • the equivalent circuit C 3 controls the amount of change in the current flowing through the second transistor T 32 according to the voltage charged in the sensing capacitor Cst, not the charge sharing method, thereby controlling the difference. Detection is made through the first transistor T 31 .
  • the first transistor T 31 and the second transistor T 32 may be implemented as transistors such as amorphous silicon (a-Si: H), polysilicon (Poly Silicon, Poly-Si), and oxide transistors. Can be.
  • a-Si amorphous silicon
  • polysilicon Poly Silicon, Poly-Si
  • oxide transistors can be.
  • FIG. 14 is a cross-sectional view illustrating a display device capable of sensing an image according to another exemplary embodiment of the present invention.
  • a display device 700 includes a sensing unit 710 and a display unit 720, and the sensing unit 710 includes a transparent substrate 711 and a first electrode. 712, a sensing layer 713, and a second electrode 714.
  • the display device 700 according to the present exemplary embodiment differs only in the configuration in which the sensing unit 710 has no thin film transistor, and in other configurations, the display device 700 is the same as the display device 700 illustrated in FIG. 10. Omit.
  • Such a configuration is inexpensive to manufacture and can be relatively simple in the manufacturing process.
  • each electrode has a sheet resistance of at least 70% or more and a sheet resistance of 100 Ohm or less.
  • 15 is an exemplary view illustrating reflection of light by a finger in a display device according to still another embodiment of the present invention.
  • the projection light emitted from the display unit 110 of the mobile device may pass through the sensing unit 120 to the human eye.
  • the projection light energy E 1 may be generated primarily by the photoelectric effect.
  • the light source having a specific wavelength in the fingerprint input window FP sequentially senses the fingerprint area in the horizontal direction A or the vertical direction B.
  • FIG. This method can obtain a fingerprint image having excellent resolution by minimizing interference between the sensors.
  • the fingerprint image has excellent resolution due to the luminance difference Can be obtained.
  • the sensing unit may be formed using a fine metal mask (FMM) or a transparent insulator material (TIM), and may be divided into a sensing region and a non-sensing region through the sensing unit.
  • FMM fine metal mask
  • TIM transparent insulator material
  • FIG. 18 is a cross-sectional view of a sensing unit of a display device according to still another embodiment of the present invention.
  • the sensing unit 810 of the display device according to the exemplary embodiment of the present invention is formed using an FMM.
  • the process of forming the sensing unit 810 will be described in detail.
  • a first transparent electrode anode
  • 813 is formed.
  • the sensing layer R 11 and the non-sensing region R 12 are distinguished using a mask (Fine Metal Mask), and the sensing layer 814 and the second transparent electrode ( Cathodes 815 may be sequentially formed.
  • the short-circuit region R 13 is formed between the sensing region R 11 and the non-sensing region R 12 , thereby distinguishing the sensing region R 11 from the non-sensing region R 12 .
  • the short region R 13 may allow the sensing region R 11 and the non-sensing region R 12 to be insulated from each other.
  • the sensing area (R 11) is a region to which the sensing unit is formed, a sensing region (R 11), the first transparent electrodes 813 that are formed, the non-sensing area of the sensing unit is not formed (R 12)
  • the first transparent electrode 813 is not formed in the short region R 13 .
  • the sensing region R 11 and the non-sensing region R 12 are formed to have different heights.
  • the sensing unit is formed on a substrate separate from the light emitting unit, and is described as being configured to be added on the upper side of the light emitting unit, but the sensing unit is formed on the same substrate as the light emitting unit.
  • Forming a tandem (Tandem) structure is also included in the embodiment of the present invention.
  • FIG. 19 is a cross-sectional view of a sensing unit of a display device according to still another embodiment of the present invention.
  • the sensing unit 820 of the display device there is a difference in the structure in which an insulating region is formed between the sensing region and the non-sensing region, and the transparent substrate 821 and the thin film transistor are formed on the sensing unit 820.
  • 822, the first transparent electrode 823, the sensing layer 824, and the second transparent electrode 825 are the same as those of the sensing unit of the display device illustrated in FIG. 18. The description focuses on the characteristic parts.
  • the sensing unit 820 of the display device according to the exemplary embodiment of the present invention is formed using the TIM.
  • a first transparent electrode (anode) 823 which is an area to be actually sensed using photography, is photographed. ).
  • the insulating layer 826 formed of an insulating material is stacked on the upper edge of the first transparent electrode 823 to form an insulating region R 23 , thereby forming the sensing region R 21 of the sensing unit 810. And the non-sensing region R 22 may be distinguished.
  • the insulating layer 826 may be formed of a TIM.
  • the insulating region R 23 may be formed to have a height higher than that of the sensing region R 21 and the non-sensing region R 22 , and the insulating region R 23 may be a sensing region ( R 21 ) and the non-sensing region R 22 are mutually insulated.
  • FIG. 20 is a diagram illustrating a configuration of a sensing unit of a display device according to still another embodiment of the present invention.
  • the display device 900 may include a first sensing unit 910R, a second sensing unit 910G, and a third sensing unit including red, green, and red color conversion units, respectively.
  • Unit 910B may include a first sensing unit 910R, a second sensing unit 910G, and a third sensing unit including red, green, and red color conversion units, respectively.
  • the first sensing unit 910R, the second sensing unit 910G, and the third sensing unit 910B are disposed on the same transparent substrate 911, and may be arranged in a matrix form, for example.
  • the sensing unit 910 may include an encapsulation layer 917 for sealing the first sensing unit 910R, the second sensing unit 910G, and the third sensing unit 910B, and the encapsulation layer 917. Is disposed at the front side of the first sensing unit 910R, the second sensing unit 910G, and the third sensing unit 910B.
  • One sensing unit 910R, 910G, and 910B includes a thin film transistor 912, a first transparent electrode 913, a sensing layer 914, and a first transparent electrode 915 disposed on the transparent substrate 911. And a color conversion unit 916.
  • the color conversion unit 916 receives a light as a kind of color filter and converts the light into a specific wavelength. For example, when the projection light emitted from the display part is formed in blue, red (R), green (G) through different materials prepared in advance in the color conversion part 916 included in the sensor part 910. It can also convert to the color of blue (B), respectively.
  • the configuration in which the color converter 916 is included in the sensor unit 910 may sense not only the role of the color filter but also the image.
  • the sensor layer 914 may take its role.
  • the material of the sensor layer 914 as a material capable of wavelength conversion may serve as a color filter.
  • the thin film transistor 912 is formed in plural, and the thin film transistor 912 is partially overlapped with the first sensing unit 910R, the second sensing unit 910G, and the third sensing unit 910B. Each connected to a state.
  • the thin film transistors 912 may be disposed between the first sensing unit 910R and the second sensing unit 910G, and between the second sensing unit 910G and the third sensing unit 910B.
  • a black matrix layer (not shown) including a light blocking material may be formed between the transparent substrate 911 and the thin film transistor 912, and the black matrix layer transmits the sensing units 910R, 910G, and 910B. It is possible to prevent the projection light, which is converted in color, from interfering with the projection light of another color passing through other sensing units 910R, 910G, and 910B.
  • the black matrix layer is not formed between the transparent substrate 911 and the thin film transistor 912, it is also possible to be formed on the upper surface side of the thin film transistor 912.
  • the thin film transistor 912 may be formed of a light blocking material.
  • the thin film transistor 912 suppresses optical interference between adjacent sensing units. It may have a predetermined height and width to be.
  • the present invention relates to a display device capable of sensing an image, and can be applied to various display devices.

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
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Abstract

La présente invention concerne un appareil d'affichage à fonction de détection d'image, comprenant une zone d'affichage pour afficher des images et une zone périphérique entourant la zone d'affichage, qui comprend : une partie d'affichage, située dans la zone d'affichage, pour générer de la lumière projetée pour afficher des images ; une couche de protection disposée sur un côté quelconque parmi les côtés supérieur et inférieur de la partie d'affichage, et à travers laquelle la lumière projetée générée dans la partie d'affichage pénètre d'une manière unidirectionnelle, et sur laquelle de la lumière réfléchie à partir de la lumière projetée qui a traversé jusqu'à l'extérieur est incidente ; et une unité de détection pour détecter la lumière réfléchie qui a pénétré dans la couche de protection, et générer une image sur la base du niveau d'énergie de la lumière réfléchie détectée, la lumière projetée pénétrant séquentiellement dans l'unité de détection et la couche de protection et changeant de couleur quand elle pénètre dans l'unité de détection.
PCT/KR2015/009331 2014-09-04 2015-09-04 Appareil d'affichage à fonction de détection d'image WO2016036179A1 (fr)

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KR20140156868 2014-11-12
KR10-2015-0017037 2015-02-03
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KR10-2015-0124781 2015-09-03
KR1020150124781A KR101758047B1 (ko) 2014-09-04 2015-09-03 이미지 센싱이 가능한 표시 장치

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