WO2016033844A1 - 一种低温多晶硅薄膜的制备机构及方法 - Google Patents

一种低温多晶硅薄膜的制备机构及方法 Download PDF

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Publication number
WO2016033844A1
WO2016033844A1 PCT/CN2014/087179 CN2014087179W WO2016033844A1 WO 2016033844 A1 WO2016033844 A1 WO 2016033844A1 CN 2014087179 W CN2014087179 W CN 2014087179W WO 2016033844 A1 WO2016033844 A1 WO 2016033844A1
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Prior art keywords
glass substrate
temperature polysilicon
polysilicon film
ozone gas
low
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English (en)
French (fr)
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李嘉
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/408,337 priority Critical patent/US9522844B2/en
Publication of WO2016033844A1 publication Critical patent/WO2016033844A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

Definitions

  • the invention relates to the technical field of manufacturing liquid crystal display panels, and in particular to a mechanism and a method for preparing a low temperature polysilicon film.
  • LTPS Low Temperature Polysilicon
  • the glass substrate is amorphous silicon, which needs to be cleaned by a cleaning agent (such as hydrofluoric acid HF) to clean the silicon film on the surface of the glass substrate, wherein hydrofluoric acid is used.
  • a cleaning agent such as hydrofluoric acid HF
  • hydrofluoric acid HF hydrofluoric acid
  • the glass substrate is cleaned with hydrofluoric acid cleaning agent, and then clean and dry air (CDA, Clean) Dry Air) blows off the liquid on the glass substrate, and forms an oxide film on the surface of the glass substrate after hydrofluoric acid cleaning.
  • CDA Clean
  • the laser annealing furnace is processed to form polycrystalline silicon on the glass substrate to form a low-temperature polysilicon film.
  • the inventors have found that in the process of the existing low-temperature polysilicon, the surface roughness of the prepared low-temperature polysilicon film is high due to the uneven oxide film or the formation of large protrusions during the laser annealing process, and the crystallization effect is high. Not good.
  • the object of the present invention is to provide a mechanism and a method for preparing a low-temperature polysilicon film, which aims to reduce the surface roughness of the prepared low-temperature polysilicon film and improve the crystallization effect.
  • a mechanism for preparing a low temperature polysilicon film wherein the preparation mechanism comprises:
  • a substrate cleaning tank for cleaning the glass substrate, wherein the substrate cleaning tank is provided with a conveying device for conveying the glass substrate;
  • An ozone gas generating device for generating ozone gas for generating ozone gas
  • a gas transmission tube comprising an input end connected to the ozone gas generating device, and an output end connected to the substrate cleaning tank and connected to the glass substrate in the substrate cleaning tank
  • An air knife is disposed at an output end of the gas transmission tube, and the air knife includes an air knife air inlet and a air knife air outlet, and the air knife air outlet is disposed in parallel with the glass substrate to uniformly blow ozone on the surface of the glass substrate gas;
  • the gas transfer tube is configured to transport the ozone gas generated by the ozone gas generating device into the substrate cleaning tank to be blown out on the surface of the cleaned glass substrate.
  • a laser annealing treatment device for laser annealing a glass substrate to form a low temperature polysilicon film on the surface of the glass substrate is provided.
  • the width of the air knife outlet is larger than the width of the glass substrate.
  • the air outlet of the air knife is uniformly disposed for two or more air outlet holes.
  • the gap between the two outlet holes is 0.3 mm to 0.8 mm.
  • the embodiment of the present invention further provides the following technical solutions:
  • a preparation mechanism for a low-temperature polysilicon film wherein the preparation mechanism comprises:
  • a substrate cleaning tank for cleaning the glass substrate
  • An ozone gas generating device for generating ozone gas for generating ozone gas
  • a gas transmission tube comprising an input end connected to the ozone gas generating device, and an output end connected to the substrate cleaning tank and connected to the glass substrate in the substrate cleaning tank
  • the gas transfer tube is configured to transport the ozone gas generated by the ozone gas generating device into the substrate cleaning tank to be blown out on the surface of the cleaned glass substrate.
  • a laser annealing treatment device for laser annealing a glass substrate to form a low temperature polysilicon film on the surface of the glass substrate is provided.
  • the gas transmission tube is provided with an air knife at an output end thereof, and the air knife includes a wind knife air inlet and a air knife air outlet, and the air knife air outlet is parallel to the glass substrate. Set to uniformly blow out ozone gas on the surface of the glass substrate.
  • the width of the air knife outlet is larger than the width of the glass substrate.
  • the air outlet of the air knife is uniformly disposed for two or more air outlet holes.
  • the gap between the two outlet holes is 0.3 mm to 0.8 mm.
  • a transfer device for transporting a glass substrate is provided in the substrate cleaning tank.
  • the embodiment of the present invention further provides the following technical solutions:
  • a method for preparing a low temperature polysilicon film comprising:
  • the glass substrate is cleaned using a cleaning solution
  • Ozone gas is uniformly blown on the surface of the cleaned glass substrate to remove residual liquid on the surface of the glass substrate, and an oxide film is formed on the surface of the cleaned glass substrate;
  • the glass substrate on which the oxide film is formed is subjected to laser annealing treatment to form a low-temperature polysilicon film on the surface of the laser-annealed glass substrate.
  • the step of uniformly blowing ozone gas on the surface of the cleaned glass substrate comprises: horizontally moving the cleaned glass substrate, and cleaning with an air knife while moving The surface of the rear glass substrate is uniformly blown with ozone gas.
  • the cleaning liquid is hydrofluoric acid HF.
  • the invention provides a mechanism and a method for preparing a low-temperature polysilicon film, wherein the substrate cleaning tank in the preparation mechanism is directly connected to the ozone gas generating device through a gas transmission tube, and not only the residual surface of the cleaned glass substrate can be removed.
  • the liquid is blown off, and the cleaned glass substrate can be directly contacted with the ozone gas, so that the silicon film on the surface of the glass substrate is smoother and free of impurities, and the ozone film is exposed to the ozone gas for a first time after the hydrofluoric acid, so that the oxide film formed on the surface is more uniform. Therefore, the crystallization effect of the low-temperature polysilicon film obtained by the laser annealing treatment is more excellent; and the preparation mechanism is simple in design, and the preparation cost is greatly saved.
  • FIG. 1 is a schematic view showing a mechanism for preparing a low temperature polysilicon film provided by the present invention
  • FIG. 2 is another schematic view of a mechanism for preparing a low temperature polysilicon film provided by the present invention
  • FIG. 3 is another schematic view of a mechanism for preparing a low temperature polysilicon film provided by the present invention.
  • FIG. 4 is a schematic flow chart of a method for preparing a low temperature polysilicon film provided by the present invention.
  • FIG. 1 is a schematic structural diagram of a mechanism for preparing a low-temperature polysilicon film according to the present invention.
  • the mechanism for preparing the low-temperature polysilicon film includes: a substrate cleaning tank 101, an ozone gas generating device 102, and a laser annealing processing device.
  • 106 which can be referred to FIG. 2 as a specific structural diagram of the manufacturing mechanism of the low-temperature polysilicon film, wherein FIG. 2 shows the connection relationship between the substrate cleaning tank 101 and the ozone gas generating device 102.
  • the substrate cleaning tank 101 is used for cleaning the glass substrate 103;
  • the ozone gas generating device 102 is configured to generate ozone gas (O3);
  • the gas transmission tube 104 includes an input end 104a and an output end 104b, the input end 104a is connected to the ozone gas generating device 102, and the output end 104b is connected to the substrate cleaning tank 101 and connected to the Above the glass substrate 103 in the substrate cleaning bath 101;
  • the gas transfer tube 104 is configured to transport the ozone gas generated by the ozone gas generating device 102 into the substrate cleaning tank 101 for cleaning. Ozone gas is blown off the surface of the rear glass substrate 103.
  • the ozone gas generated by the ozone gas generating device 102 sequentially passes through the input end 104a, the gas transfer tube 104, and the output end 104b, and is finally blown toward the substrate cleaning tank 101.
  • the laser annealing treatment device 106 is configured to perform laser annealing treatment on the glass substrate 103 taken out from the substrate cleaning bath 101 to form a low-temperature polysilicon film on the surface of the glass substrate 103.
  • the output end 104b of the gas transmission pipe 104 is provided with a wind knife 1041, which can be collectively referred to FIG. 3, the air knife 1041 includes a wind knife air inlet 1041a and a wind knife air outlet. 1041b, wherein the air knife air outlet 1041b is disposed in parallel with the glass substrate 103 to uniformly blow out ozone gas on the surface of the glass substrate 103.
  • the gas transfer pipe 104 provided at the outlet of the substrate cleaning tank 101 is directly connected to the ozone gas generating device 102, that is, the cleaned glass substrate 103 is directly brought into contact with the ozone gas.
  • the surface liquid medicine of the glass substrate 103 can also be filtered by adjusting the pressure of the ozone gas.
  • the width of the air knife outlet 1041b is larger than the width of the glass substrate 103; the air knife outlet 1041b is evenly arranged for two or more air outlets; The gap between the air outlets is 0.3 mm to 0.8 mm. Preferably, the gap between the air outlet holes may be 0.5 mm to uniformly blow ozone gas from the air knife outlet 1041b.
  • the substrate cleaning tank 101 is provided with a conveying device 105 for conveying the glass substrate 103.
  • the conveying device 105 is opened, and the conveying device The glass substrate 103 is conveyed to the lower side of the air knife outlet 1041b.
  • the air knife can be regarded as a dust removal and water removal setting, and can be driven by a vortex fan or a high-pressure centrifugal fan (instead of the high-energy compressed air CDA), which uses different fans to cooperate with the air knife, and can timely surface the object. Dust and moisture are blown dry.
  • the glass substrate is amorphous silicon, which needs to be cleaned by a cleaning agent (such as hydrofluoric acid HF) to clean the silicon film on the surface of the glass substrate.
  • a cleaning agent such as hydrofluoric acid HF
  • the hydrofluoric acid is used to wash off the burrs on the glass substrate; in the solution of the present invention, the glass substrate 103 is placed in the substrate cleaning tank 101 before the laser annealing treatment, and the glass substrate 103 is cleaned, mainly Etching the surface of the glass substrate 103 with hydrofluoric acid HF; after the glass substrate 103 is cleaned by the hydrofluoric acid cleaning agent, the ozone gas generating device 102 is turned on, and the surface of the glass substrate is uniformly distributed by the air knife 1041.
  • Blowing ozone gas that is, directly letting the cleaned glass substrate 103
  • the ozone gas is contacted to form a more uniform and effective oxide film on the surface of the glass substrate 103, and the laser is annealed to obtain a polycrystalline silicon (ie, a low-temperature polysilicon film) having a better crystallization effect.
  • the substrate cleaning tank 101 is directly connected to the ozone gas generating device 102 through the gas transfer tube 104, and not only the residual medicine on the surface of the cleaned glass substrate 103 can be used.
  • the cleaned glass substrate 103 can be directly contacted with the ozone gas, so that the silicon film on the surface of the glass substrate 103 is smoother and free of impurities, and the ozone film is contacted for the first time after the hydrofluoric acid to make the oxide film formed on the surface more uniform. Therefore, the crystallization effect of the low-temperature polysilicon film obtained by the laser annealing treatment is more excellent; and the preparation mechanism is simple in design, and the preparation cost is greatly saved.
  • the embodiment of the present invention further provides a method for preparing a low-temperature polysilicon film.
  • the meaning of the noun is the same as that of the above-mentioned low-temperature polysilicon film preparation mechanism, and the specific implementation details can be referred to the description in the embodiment of the preparation mechanism of the low-temperature polysilicon film.
  • FIG. 4 is a schematic flow chart of a method for preparing a low-temperature polysilicon film according to the present invention.
  • the method for preparing the low-temperature polysilicon film is applied to the preparation mechanism of the low-temperature polysilicon film provided above, and can be referred to FIG. 2 and FIG. 3, the steps of the method for preparing the low temperature polysilicon film include:
  • step S401 the glass substrate is cleaned using a cleaning liquid before the laser annealing treatment is performed on the glass substrate.
  • step S402 ozone gas is uniformly blown on the surface of the cleaned glass substrate to remove residual liquid on the surface of the glass substrate, and an oxide film is formed on the surface of the cleaned glass substrate.
  • step S403 the glass substrate on which the oxide film is formed is subjected to laser annealing treatment to form a low-temperature polysilicon film on the surface of the laser-annealed glass substrate.
  • the uniformly blowing ozone gas on the surface of the cleaned glass substrate may specifically include: horizontally moving the cleaned glass substrate, and using the air knife to clean the glass while moving The surface of the substrate is uniformly blown with ozone gas.
  • the cleaning solution is hydrofluoric acid.
  • the ozone gas pressure can be adjusted to filter the surface of the glass substrate; in the embodiment of the invention, the glass substrate can be exposed to the ozone gas for a first time after the hydrofluoric acid cleaning; and the air knife blows out the ozone gas more uniformly.
  • the higher concentration makes the oxide film more uniform.
  • the glass substrate is amorphous silicon, which needs to be cleaned by a cleaning agent (such as hydrofluoric acid HF) to clean the silicon film on the surface of the glass substrate.
  • a cleaning agent such as hydrofluoric acid HF
  • the hydrofluoric acid is used to wash off the burrs on the glass substrate; in the solution of the present invention, in conjunction with FIG. 2 and FIG. 3, the glass substrate 103 is placed in the substrate cleaning tank 101 before the laser annealing treatment, and The glass substrate 103 is cleaned.
  • the surface of the glass substrate 103 is etched by hydrofluoric acid HF; after the glass substrate 103 is cleaned by the hydrofluoric acid cleaning agent, the ozone gas generating device 102 is turned on, and the wind is used.
  • the knife 1041 uniformly blows ozone gas to the surface of the glass substrate, that is, directly causes the cleaned glass substrate 103
  • the ozone gas is contacted to form a more uniform and effective oxide film on the surface of the glass substrate 103, and the laser is annealed to obtain a polycrystalline silicon (ie, a low-temperature polysilicon film) having a better crystallization effect.
  • the substrate cleaning tank is directly connected to the ozone gas generating device through the gas transmission tube, the surface of the cleaned glass substrate can be left.
  • the liquid is blown off, and the cleaned glass substrate can be directly contacted with the ozone gas, so that the silicon film on the surface of the glass substrate is smoother and free of impurities, and the ozone film is exposed to the ozone gas for a first time after the hydrofluoric acid, so that the oxide film formed on the surface is more uniform. Therefore, the crystallization effect of the low-temperature polysilicon film obtained by the laser annealing treatment is further improved.
  • the present invention also provides a low temperature polysilicon film prepared by the above method for preparing a low temperature polysilicon film, wherein preferably, the low temperature polysilicon film has a thickness of 30 to 100 nm.

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Abstract

一种低温多晶硅薄膜的制备机构及方法，包括基板清洗槽、臭氧气体生成装置，基板清洗槽与臭氧气体生成装置连接，不仅可以将玻璃基板表面的残留药液吹掉，还可以让玻璃基板直接接触臭氧气体，使得表面的硅膜更加平滑无杂质，经过氢氟酸后第一时间接触臭氧气体使表面形成的氧化膜更加均匀，从而使结晶效果更加优异。

Description

一种低温多晶硅薄膜的制备机构及方法 技术领域
本发明涉及液晶显示面板制造技术领域，特别涉及一种低温多晶硅薄膜的制备机构及方法。
 背景技术
在液晶显示面板制造行业中，低温多晶硅技术（LTPS，Low Temperature Poly-silicon）由于拥有更好的电子迁移率，逐步成为液晶显示面板技术革新的方向。
低温多晶硅技术的制程中，在激光退火处理之前，玻璃基板上是非晶硅，其需要经过清洗剂（如氢氟酸HF）进行清洗，将玻璃基板表面的硅膜洗干净，其中氢氟酸用于将玻璃基板上的毛刺洗掉，玻璃基板经过氢氟酸清洗剂清洗完后，使用清洁干燥的空气（CDA，Clean Dry Air）将玻璃基板上的药液吹掉，并且在在氢氟酸清洗后玻璃基板表层会形成一层氧化膜，最后进行激光退火炉处理，在玻璃基板上形成多晶硅，即形成低温多晶硅薄膜。
可是在实践中，发明人发现现有的低温多晶硅的制程中，由于氧化膜不均匀或者激光退火过程中形成了较大的突起物，从而导致制备出来的低温多晶硅薄膜表面粗糙度高，结晶效果不佳。
 技术问题
本发明的目的在于提供一种低温多晶硅薄膜的制备机构及方法，旨在降低制备出来的低温多晶硅薄膜的表面粗糙度，改善结晶效果。
 技术解决方案
一种低温多晶硅薄膜的制备机构，其中所述制备机构包括：
一基板清洗槽，用于对玻璃基板进行清洗，所述基板清洗槽中设置有用于传送玻璃基板的传送装置；
一臭氧气体生成装置，用于生成臭氧气体；
一气体传输管，包括输入端和输出端，所述输入端与所述臭氧气体生成装置相连，所述输出端与所述基板清洗槽相连，并连接至所述基板清洗槽内的玻璃基板的上方；
所述气体传输管的输出端设置有风刀，所述风刀包括风刀进气口和风刀出气口，所述风刀出气口与所述玻璃基板平行设置，以在玻璃基板表面均匀吹出臭氧气体；
其中，当玻璃基板在所述基板清洗槽进行清洗后，所述气体传输管用于将所述臭氧气体生成装置生成的臭氧气体向所述基板清洗槽内传输，以在清洗后的玻璃基板表面吹出臭氧气体；
一激光退火处理装置，用于对玻璃基板进行激光退火处理，以在玻璃基板的表面形成低温多晶硅薄膜。
在上述低温多晶硅薄膜的制备机构中，所述风刀出气口的宽度大于所述玻璃基板的宽度。
在上述低温多晶硅薄膜的制备机构中，所述风刀出气口为两个以上出气孔均匀设置。
在上述低温多晶硅薄膜的制备机构中，两个所述出气孔之间的间隙为0.3mm至0.8mm。
为解决上述问题，本发明实施例还提供技术方案如下：
一种低温多晶硅薄膜的制备机构，其种所述制备机构包括：
一基板清洗槽，用于对玻璃基板进行清洗；
一臭氧气体生成装置，用于生成臭氧气体；
一气体传输管，包括输入端和输出端，所述输入端与所述臭氧气体生成装置相连，所述输出端与所述基板清洗槽相连，并连接至所述基板清洗槽内的玻璃基板的上方；
其中，当玻璃基板在所述基板清洗槽进行清洗后，所述气体传输管用于将所述臭氧气体生成装置生成的臭氧气体向所述基板清洗槽内传输，以在清洗后的玻璃基板表面吹出臭氧气体；
一激光退火处理装置，用于对玻璃基板进行激光退火处理，以在玻璃基板的表面形成低温多晶硅薄膜。
在上述低温多晶硅薄膜的制备机构中，所述气体传输管的输出端设置有风刀，所述风刀包括风刀进气口和风刀出气口，所述风刀出气口与所述玻璃基板平行设置，以在玻璃基板表面均匀吹出臭氧气体。
在上述低温多晶硅薄膜的制备机构中，所述风刀出气口的宽度大于所述玻璃基板的宽度。
在上述低温多晶硅薄膜的制备机构中，所述风刀出气口为两个以上出气孔均匀设置。
在上述低温多晶硅薄膜的制备机构中，两个所述出气孔之间的间隙为0.3mm至0.8mm。
在上述低温多晶硅薄膜的制备机构中，所述基板清洗槽中设置有用于传送玻璃基板的传送装置。
为解决上述问题，本发明实施例还提供技术方案如下：
一种低温多晶硅薄膜的制备方法，其中包括：
在玻璃基板进行激光退火处理前，使用清洗液对所述玻璃基板进行清洗；
在清洗后的玻璃基板的表面，均匀吹臭氧气体，以除去所述玻璃基板的表面的残留液体，并在所述清洗后的玻璃基板的表面形成氧化膜；以及
对形成氧化膜的玻璃基板进行激光退火处理，在激光退火处理的玻璃基板的表面形成低温多晶硅薄膜。
在上述低温多晶硅薄膜的制备方法中，所述在清洗后的玻璃基板的表面，均匀吹臭氧气体的步骤，包括：对清洗后的玻璃基板进行水平移动，并在移动的同时利用风刀在清洗后的玻璃基板的表面，均匀吹臭氧气体。
在上述低温多晶硅薄膜的制备方法中，所述清洗液为氢氟酸HF。
 有益效果
相对现有技术，本发明提供的低温多晶硅薄膜的制备机构及方法，其中，制备机构中的基板清洗槽通过气体传输管直接与臭氧气体生成装置连接，不仅可以将清洗后的玻璃基板表面的残留药液吹掉，还可以让清洗后的玻璃基板直接接触臭氧气体，使得玻璃基板表面的硅膜更加平滑无杂质，经过氢氟酸后第一时间接触臭氧气体使表面形成的氧化膜更加均匀，从而使激光退火处理得到的低温多晶硅薄膜的结晶效果更加优异；并且，所述制备机构设计简单，大大的节省了制备成本。
 附图说明
图1为本发明提供的低温多晶硅薄膜的制备机构的示意图；
图2为本发明提供的低温多晶硅薄膜的制备机构的另一示意图；
图3为本发明提供的低温多晶硅薄膜的制备机构的另一示意图；
图4为本发明提供的低温多晶硅薄膜的制备方法的流程示意图。
 本发明的最佳实施方式
请参照图式，其中相同的组件符号代表相同的组件，本发明的原理是以实施在一适当的运算环境中来举例说明。以下的说明是基于所例示的本发明具体实施例，其不应被视为限制本发明未在此详述的其它具体实施例。
请参考图1，图1为本发明提供的低温多晶硅薄膜的制备机构的结构示意图；所述低温多晶硅薄膜的制备机构包括：一基板清洗槽101、一臭氧气体生成装置102以及一激光退火处理装置106，可一并参考图2，为所述低温多晶硅薄膜的制备机构的具体结构示意图，其中，图2示出了基板清洗槽101和臭氧气体生成装置102之间的连接关系。
其中所述基板清洗槽101，用于对玻璃基板103进行清洗；
所述臭氧气体生成装置102，用于生成臭氧气体（O3）；
所述气体传输管104，包括输入端104a和输出端104b，所述输入端104a与所述臭氧气体生成装置102相连，所述输出端104b与所述基板清洗槽101相连，并连接至所述基板清洗槽101内的玻璃基板103的上方；
其中，当玻璃基板103在所述基板清洗槽101进行清洗后，所述气体传输管104用于将所述臭氧气体生成装置102生成的臭氧气体向所述基板清洗槽101内传输，以在清洗后的玻璃基板103表面吹出臭氧气体。
具体的，臭氧气体生成装置102生成的臭氧气体依次通过所述输入端104a、气体传输管104、输出端104b，最后吹向所述基板清洗槽101。
所述激光退火处理装置106，用于对从所述基板清洗槽101取出的玻璃基板103进行激光退火处理，以在玻璃基板103的表面形成低温多晶硅薄膜。
优选的，如图2所示，所述气体传输管104的输出端104b设置有风刀1041，可一并参考图3所示，所述风刀1041包括风刀进气口1041a和风刀出气口1041b，其中所述风刀出气口1041b与所述玻璃基板103平行设置，以在玻璃基板103表面均匀吹出臭氧气体。
也就是说，在所述基板清洗槽101出口设置的气体传输管104直接连接在臭氧气体生成装置102上，即直接让清洗后的玻璃基板103接触臭氧气体。优选的，还可以通过调节臭氧气体的压力，将玻璃基板103表面药液过滤干净。
进一步的，如图3所示的风刀结构，所述风刀出气口1041b的宽度大于所述玻璃基板103的宽度；所述风刀出气口1041b为两个以上出气孔均匀设置；其中，两个所述出气孔之间的间隙为0.3mm至0.8mm，优选的，所述出气孔之间的间隙可以为0.5mm，以使臭氧气体从所述风刀出气口1041b均匀吹出。
容易想到的是，所述基板清洗槽101中设置有用于传送玻璃基板103的传送装置105，当所述玻璃基板103在所述基板清洗槽101清洗完后，开启所述传送装置105，传送装置105将所述玻璃基板103传送至所述风刀出气口1041b下方。
其中，所述风刀可以认为是一除尘除水设置，可以采用涡流风机或高压离心风机驱动（代替高能耗的压缩空气CDA），它使用不同的风机与风刀配合，可及时把物体表面的尘屑及水分吹干。
可以理解的是，低温多晶硅技术的制程中，在激光退火处理之前，玻璃基板上是非晶硅，其需要经过清洗剂（如氢氟酸HF）进行清洗，将玻璃基板表面的硅膜洗干净，其中氢氟酸用于将玻璃基板上的毛刺洗掉；本发明方案中，在激光退火处理之前，所述玻璃基板103放置于基板清洗槽101里，并对所述玻璃基板103进行清洗，主要的，利用氢氟酸HF对玻璃基板103表面的进行刻蚀；玻璃基板103经过氢氟酸清洗剂清洗完后，开启所述臭氧气体生成装置102，利用风刀1041向所述玻璃基板表面均匀吹臭氧气体，即直接让清洗后的玻璃基板103 接触臭氧气体，从而使玻璃基板103表面形成更加均匀有效的氧化膜，使激光退火得出结晶效果更好的多晶硅（即低温多晶硅薄膜）。
由上述可知，本发明实施例提供的低温多晶硅薄膜的制备机构，所述基板清洗槽101通过气体传输管104直接与臭氧气体生成装置102连接，不仅可以将清洗后的玻璃基板103表面的残留药液吹掉，还可以让清洗后的玻璃基板103直接接触臭氧气体，使得玻璃基板103表面的硅膜更加平滑无杂质，经过氢氟酸后第一时间接触臭氧气体使表面形成的氧化膜更加均匀，从而使激光退火处理得到的低温多晶硅薄膜的结晶效果更加优异；并且，所述制备机构设计简单，大大的节省了制备成本。
为便于更好的实施本发明实施例提供的低温多晶硅薄膜的制备机构，本发明实施例还提供一种低温多晶硅薄膜的制备方法。其中名词的含义与上述低温多晶硅薄膜的制备机构中相同，具体实现细节可以参考低温多晶硅薄膜的制备机构实施例中的说明。
请参考图4，图4为本发明提供的低温多晶硅薄膜的制备方法的流程示意图，所述低温多晶硅薄膜的制备方法应用于上述提供的低温多晶硅薄膜的制备机构，可一并参考图1、图2以及图3，所述低温多晶硅薄膜的制备方法的步骤包括：
在步骤S401中，在玻璃基板进行激光退火处理前，使用清洗液对所述玻璃基板进行清洗。
在步骤S402中，在清洗后的玻璃基板的表面，均匀吹臭氧气体，以除去所述玻璃基板的表面的残留液体，并在所述清洗后的玻璃基板的表面形成氧化膜。
在步骤S403中，对形成氧化膜的玻璃基板进行激光退火处理，在激光退火处理的玻璃基板的表面形成低温多晶硅薄膜。
进一步的，所述在清洗后的玻璃基板的表面，均匀吹臭氧气体（即步骤402）可以具体包括：对清洗后的玻璃基板进行水平移动，并在移动的同时利用风刀在清洗后的玻璃基板的表面，均匀吹臭氧气体。其中，优选的，所述清洗液为氢氟酸。
更进一步的，调节臭氧气体压力可以将玻璃基板表面药液过滤干净；本发明实施例中，玻璃基板在氢氟酸清洗之后可以第一时间接触臭氧气体；并且，风刀吹出臭氧气体更均匀，浓度更高，使得氧化膜更均匀。
可以理解的是，低温多晶硅技术的制程中，在激光退火处理之前，玻璃基板上是非晶硅，其需要经过清洗剂（如氢氟酸HF）进行清洗，将玻璃基板表面的硅膜洗干净，其中氢氟酸用于将玻璃基板上的毛刺洗掉；本发明方案中，可结合参考图2和图3，在激光退火处理之前，所述玻璃基板103放置于基板清洗槽101里，并对所述玻璃基板103进行清洗，主要的，利用氢氟酸HF对玻璃基板103表面的进行刻蚀；玻璃基板103经过氢氟酸清洗剂清洗完后，开启所述臭氧气体生成装置102，利用风刀1041向所述玻璃基板表面均匀吹臭氧气体，即直接让清洗后的玻璃基板103 接触臭氧气体，从而使玻璃基板103表面形成更加均匀有效的氧化膜，使激光退火得出结晶效果更好的多晶硅（即低温多晶硅薄膜）。
由上述可知，本发明实施例提供的低温多晶硅薄膜的制备方法，由于应用的制备机构中，基板清洗槽通过气体传输管直接与臭氧气体生成装置连接，不仅可以将清洗后的玻璃基板表面的残留药液吹掉，还可以让清洗后的玻璃基板直接接触臭氧气体，使得玻璃基板表面的硅膜更加平滑无杂质，经过氢氟酸后第一时间接触臭氧气体使表面形成的氧化膜更加均匀，从而使激光退火处理得到的低温多晶硅薄膜的结晶效果更加优异。
另可以理解的是，本发明还提供一种采用上述低温多晶硅薄膜的制备方法制备出来的低温多晶硅薄膜，其中优选的，所述低温多晶硅薄膜厚度为30至100nm。
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见上文相关的详细描述，此处不再赘述。
本领域技术人员将认识到，本文所使用的词语“优选的”意指用作实例、示例或例证。奉文描述为“优选的”任意方面或设计不必被解释为比其他方面或设计更有利。相反，词语“优选的”的使用旨在以具体方式提出概念。如本申请中所使用的术语“或”旨在意指包含的“或”而非排除的“或”。即，除非另外指定或从上下文中清楚，“X使用101或102”意指自然包括排列的任意一个。即，如果X使用101；X使用102；或X使用101和102二者，则“X使用101或102”在前述任一示例中得到满足。
而且，尽管已经相对于一个或多个实现方式示出并描述了本公开，但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本公开包括所有这样的修改和变型，并且仅由所附权利要求的范围限制。特别地关于由上述组件（例如元件、资源等）执行的各种功能，用于描述这样的组件的术语旨在对应于执行所述组件的指定功能（例如其在功能上是等价的）的任意组件（除非另外指示），即使在结构上与执行本文所示的本公开的示范性实现方式中的功能的公开结构不等同。此外，尽管本公开的特定特征已经相对于若干实现方式中的仅一个被公开，但是这种特征可以与如可以对给定或特定应用而言是期望和有利的其他实现方式的一个或多个其他特征组合。而且，就术语“包括”、“具有”、“含有”或其变形被用在具体实施方式或权利要求中而言，这样的术语旨在以与术语“包含”相似的方式包括。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (13)

  1. 一种低温多晶硅薄膜的制备机构，其中所述制备机构包括：
    一基板清洗槽，用于对玻璃基板进行清洗，所述基板清洗槽中设置有用于传送玻璃基板的传送装置；
    一臭氧气体生成装置，用于生成臭氧气体；
    一气体传输管，包括输入端和输出端，所述输入端与所述臭氧气体生成装置相连，所述输出端与所述基板清洗槽相连，并连接至所述基板清洗槽内的玻璃基板的上方；
    所述气体传输管的输出端设置有风刀，所述风刀包括风刀进气口和风刀出气口，所述风刀出气口与所述玻璃基板平行设置，以在玻璃基板表面均匀吹出臭氧气体；
    其中，当玻璃基板在所述基板清洗槽进行清洗后，所述气体传输管用于将所述臭氧气体生成装置生成的臭氧气体向所述基板清洗槽内传输，以在清洗后的玻璃基板表面吹出臭氧气体；
    一激光退火处理装置，用于对玻璃基板进行激光退火处理，以在玻璃基板的表面形成低温多晶硅薄膜。
  2. 根据权利要求1所述的低温多晶硅薄膜的制备机构，其中所述风刀出气口的宽度大于所述玻璃基板的宽度。
  3. 根据权利要求1所述的低温多晶硅薄膜的制备机构，其中所述风刀出气口为两个以上出气孔均匀设置。
  4. 根据权利要求3所述的低温多晶硅薄膜的制备机构，其中两个所述出气孔之间的间隙为0.3mm至0.8mm。
  5. 一种低温多晶硅薄膜的制备机构，其中所述制备机构包括：
    一基板清洗槽，用于对玻璃基板进行清洗；
    一臭氧气体生成装置，用于生成臭氧气体；
    一气体传输管，包括输入端和输出端，所述输入端与所述臭氧气体生成装置相连，所述输出端与所述基板清洗槽相连，并连接至所述基板清洗槽内的玻璃基板的上方；
    其中，当玻璃基板在所述基板清洗槽进行清洗后，所述气体传输管用于将所述臭氧气体生成装置生成的臭氧气体向所述基板清洗槽内传输，以在清洗后的玻璃基板表面吹出臭氧气体；
    一激光退火处理装置，用于对玻璃基板进行激光退火处理，以在玻璃基板的表面形成低温多晶硅薄膜。
  6. 根据权利要求5所述的低温多晶硅薄膜的制备机构，其中所述气体传输管的输出端设置有风刀，所述风刀包括风刀进气口和风刀出气口，所述风刀出气口与所述玻璃基板平行设置，以在玻璃基板表面均匀吹出臭氧气体。
  7. 根据权利要求6所述的低温多晶硅薄膜的制备机构，其中所述风刀出气口的宽度大于所述玻璃基板的宽度。
  8. 根据权利要求6所述的低温多晶硅薄膜的制备机构，其中所述风刀出气口为两个以上出气孔均匀设置。
  9. 根据权利要求8所述的低温多晶硅薄膜的制备机构，其中两个所述出气孔之间的间隙为0.3mm至0.8mm。
  10. 根据权利要求5所述的低温多晶硅薄膜的制备机构，其中所述基板清洗槽中设置有用于传送玻璃基板的传送装置。
  11. 一种低温多晶硅薄膜的制备方法，其中包括：
    在玻璃基板进行激光退火处理前，使用清洗液对所述玻璃基板进行清洗；
    在清洗后的玻璃基板的表面，均匀吹臭氧气体，以除去所述玻璃基板的表面的残留液体，并在所述清洗后的玻璃基板的表面形成氧化膜；以及
    对形成氧化膜的玻璃基板进行激光退火处理，在激光退火处理的玻璃基板的表面形成低温多晶硅薄膜。
  12. 根据权利要求11所述的低温多晶硅薄膜的制备方法，其中所述在清洗后的玻璃基板的表面，均匀吹臭氧气体的步骤，包括：
    对清洗后的玻璃基板进行水平移动，并在移动的同时利用风刀在清洗后的玻璃基板的表面，均匀吹臭氧气体。
  13. 根据权利要求11所述的低温多晶硅薄膜的制备方法，其中所述清洗液为氢氟酸HF。
PCT/CN2014/087179 2014-09-03 2014-09-23 一种低温多晶硅薄膜的制备机构及方法 Ceased WO2016033844A1 (zh)

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