WO2016027628A1

WO2016027628A1 - Electronic component production method

Info

Publication number: WO2016027628A1
Application number: PCT/JP2015/071316
Authority: WO
Inventors: 秀彦佐々木; 敏夫萩
Original assignee: 株式会社村田製作所
Priority date: 2014-08-18
Filing date: 2015-07-28
Publication date: 2016-02-25
Also published as: JP6380540B2; JPWO2016027628A1

Abstract

An electronic component production method comprising: a parameter measurement step for measuring parameters of an electronic-component element prepared in a previous step; a photoresist application step; a photoresist exposure step in which a direct writing method is employed; and a photoresist development step. In the photoresist exposure step, pattern data corrected so as to reduce the variation in the parameters are prepared on the basis of the parameters obtained in the parameter measurement step, and pattern exposure is performed using the pattern data.

Description

Manufacturing method of electronic parts

The present invention relates to a method of manufacturing an electronic component including a photoresist coating process, a photoresist exposure process, and a photoresist development process. More specifically, the present invention relates to a high characteristic by correcting a pattern shape in the photoresist exposure process. The present invention relates to a method for manufacturing an electronic component capable of manufacturing an accurate electronic component with a high yield.

Conventionally, electronic parts such as semiconductor devices are generally manufactured by repeating a photolithography process, a film forming process, an etching process, and the like as necessary to form a desired circuit pattern on a substrate such as a semiconductor. ing.

10 (a) to 10 (c) and FIGS. 11 (a) to 11 (c) show a method for manufacturing the semiconductor device 200 as a method for manufacturing a general electronic component.

First, as shown in FIG. 10A, a conductive film 104A is formed on the substrate 101, and then a photoresist 105 is applied to the conductive film 104A.

The substrate 101 includes a semiconductor part 102 and an insulator part 103.
In this manufacturing method, a positive type photoresist 105 is used. Note that a negative photoresist can be used instead of the positive photoresist. However, in this case, it is necessary to reverse the pattern shape of the photomask used for exposure from that described later.

Next, as shown in FIG. 10B, using a photomask 106, the photoresist 105 is exposed to a predetermined pattern shape.

Next, as shown in FIG. 10C, the photoresist 105 is developed.
Next, as illustrated in FIG. 11A, the conductive film 104 </ b> A is etched using the photoresist 105. As a result, the gate electrode 104 is formed from the conductive film 104A.

Subsequently, as shown in FIG. 11B, ion implantation is performed using the photoresist 105. As a result, an active layer 102 a is formed in the semiconductor unit 102.

Next, as shown in FIG. 11C, the photoresist 105 is removed.
Thereafter, a general photolithography process, a film forming process, an etching process, and the like are further repeated to complete the semiconductor device 200.

In this conventional manufacturing method, the photoresist 105 is exposed in a predetermined pattern shape using the photomask 106 in the photoresist exposure step shown in FIG.

By the way, until now, the exposure of photoresist has been often performed using a reduction projection exposure apparatus called a stepper. Generally, in a semiconductor device manufacturing process, hundreds or more elements are manufactured on one wafer, but the reduced projection exposure apparatus divides the photoresist on the wafer into a plurality of regions, Each region of the photoresist is exposed in turn while shifting the wafer.

However, in this method using a photomask, since the photomask is prepared in a predetermined pattern shape in advance, the pattern shape cannot be corrected halfway.

On the other hand, in recent years, in order to cope with miniaturization of semiconductor devices and the like, exposure by a direct drawing method not using a photomask, which is typified by electron beam exposure and DMD (Digital Micromirror Device) projection exposure, is also performed.

In electron beam exposure, an electron beam emitted from an electron gun is passed through an electron lens, an aperture, a deflector, etc., and the photoresist is exposed to a desired pattern shape while being finely controlled.

In DMD projection exposure, a DMD having a large number of micromirrors (for example, hundreds of thousands) is used, and the DMD is irradiated with light from a light source while controlling the inclination of each micromirror of the DMD. Exposure is performed by irradiating the wafer (photoresist) with the reflected light through a focus lens.

In any of the methods, the photoresist can be exposed to a desired pattern shape (exposure by a direct drawing method) without using a photomask.

In the case of exposure by the direct drawing method, since a photomask is not used, it is possible to change the pattern shape for exposing the photoresist.

For example, Japanese Patent Laid-Open No. 2002-40670 (Patent Document 1) uses a DLP (Digital Light Processing) element that is a kind of DMD described above, and applies a method of exposing a photoresist by a direct drawing method. A method for forming an electrode on a substrate is disclosed. In this electrode forming method on a piezoelectric substrate, the material characteristics of each piezoelectric substrate are measured in advance, and the exposure pattern on the photoresist is corrected according to the characteristics.

JP 2002-40670 A

However, as the performance of semiconductor devices and the like increases, circuit miniaturization advances, and processing variations have a great influence on device characteristics, and are greatly related to product yield.

For this reason, in order to maintain the yield above the standard, it is not sufficient to correct the characteristics of the substrate by reflecting the characteristics of the substrate in the manufacture of a product using the substrate, as disclosed in Patent Document 1 described above. There is a need to satisfy the required device characteristics by feeding back and correcting the processing variations generated in the manufacturing process of the product to the subsequent manufacturing process of the product.

The present invention has been made in order to solve the above-described problems, and as a means therefor, the electronic component manufacturing method of the present invention includes a parameter measuring step for measuring parameters of the electronic component element produced in the previous step, and A photoresist coating process, a photoresist exposure process using a direct drawing method, and a photoresist development process, and the photoresist exposure process reduces parameter variations based on the parameters obtained in the parameter measurement process. Corrected pattern data was prepared, and pattern exposure was performed using the pattern data.

In the present invention, since the photoresist exposure process is performed by a direct drawing method, the exposure pattern shape can be easily corrected.

In the present invention, the electronic component to be manufactured includes, for example, an MIM type capacitor in which a first electrode, an interlayer insulating film, and a second electrode are stacked. The film thickness of the interlayer insulating film can be used, and the pattern shape for forming the second electrode can be corrected in the photoresist exposure process. In this case, when the film thickness of the interlayer insulating film measured in the parameter measurement process is smaller than a predetermined value, the shape of the second electrode is smaller than a predetermined value in the photoresist exposure process. When the size of the pattern shape is corrected so as to be small, and the film thickness of the interlayer insulating film measured in the parameter measurement process is larger than a predetermined value, the shape of the second electrode in the photoresist exposure process is By correcting the size of the pattern shape so as to be larger than a predetermined value, the size of the capacitance of the MIM capacitor can be strictly maintained within the specified value range.

In the present invention, the electronic component to be manufactured includes, for example, a vibrator and a vibrator that is formed on the vibrator and has an excitation part for vibrating the vibrator, and is measured in the parameter measurement process. The parameter is the thickness of the vibration part, and the pattern shape for specifying the shape of the vibration part can be corrected in the photoresist exposure process.

In the present invention, a plurality of electronic components are manufactured on one wafer, and the parameter measuring step divides the wafer into a plurality of regions, measures the parameters of the electronic component elements for each category, In the resist exposure process, the pattern shape may be corrected for each section. In this case, the pattern shape of the photoresist exposure process can be corrected for each wafer section. In other words, device characteristics can be corrected continuously within the wafer surface. Therefore, the characteristic accuracy of the manufactured electronic component can be further increased. For example, the parameter of the electronic component element may be measured for each section where each electronic component (one electronic component) of the wafer is formed, and the pattern shape of the photoresist exposure process may be corrected for each section. .

According to the present invention, since the pattern shape is corrected in the photoresist exposure process based on the parameters obtained in the parameter measurement process, it is possible to manufacture electronic components with high characteristic accuracy with a high yield.

FIGS. 1A to 1D are cross-sectional views showing steps performed in the manufacturing method according to Embodiment 1 of the present invention. 2 (a) to 2 (d) are continuations of FIG. 1 (d) and are cross-sectional views showing steps performed in the manufacturing method according to Embodiment 1 of the present invention. FIG. 3 is a perspective view showing a vibration device according to Embodiment 2 of the present invention. FIG. 4 is a cross-sectional view taken along the line IV-IV shown in FIG. 5 (a) to 5 (d) are cross-sectional views illustrating steps performed in the manufacturing method according to Embodiment 2 of the present invention. 6 (a) to 6 (c) are diagrams subsequent to FIG. 5 (d) and showing steps performed in the manufacturing method according to Embodiment 2 of the present invention. FIGS. 7 (a) and 7 (b) are diagrams continuing from FIG. 6 (c) and showing steps performed in the manufacturing method according to Embodiment 2 of the present invention. 8 (a) and 8 (b) are diagrams subsequent to FIG. 7 (b) and showing steps performed in the manufacturing method according to Embodiment 2 of the present invention. FIG. 9 is a plan view showing a state in which the photoresist is patterned in FIG. 10 (a) to 10 (c) are cross-sectional views showing steps performed in the conventional manufacturing method. 11 (a) to 11 (c) are continuations of FIG. 10 (c), and are cross-sectional views showing steps performed in the conventional manufacturing method.

Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.
(Embodiment 1)
1 (a) to 1 (d) and FIGS. 2 (a) to 2 (d), an electronic component 100 including an MIM capacitor 8 according to Embodiment 1 of the method for manufacturing an electronic component of the present invention is shown. The manufacturing method of is shown.

In the present embodiment, a wafer having a diameter of 150 mmφ is prepared as the substrate 1, and 7000 electronic components 100 including the MIM type capacitor 8 are formed on the wafer. However, in the following, for the sake of convenience, the description will focus on the MIM type capacitor 8 portion of one of the electronic components 100.

First, as shown in FIG. 1A, an insulating film 2 is formed on a substrate 1. The material and type of the substrate 1 are arbitrary. Further, the material, film thickness, formation method, and the like of the insulating film 2 are arbitrary. However, as a material of the insulating film 2, for example, SiO ₂ , SiN, Al ₂ O ₃ or the like can be used. Moreover, as a formation method of the insulating film 2, sputtering, CVD, etc. can be used, for example.

Next, as shown in FIG. 1A, a conductive film 3 having a predetermined shape is formed on the insulating film 2. The material, film thickness, formation method, and the like of the conductive film 3 are arbitrary. However, as a material, for example, Ti, Al, Ta, Au, Cu, W, or the like can be used. A part of the conductive film 3 constitutes the first electrode 13 of the MIM capacitor 8.

Next, as shown in FIG. 1B, the insulating film 4 is formed on the insulating film 2 and the first electrode 13 (conductive film 3). The material, formation method, and the like of the insulating film 4 can be the same as the material, formation method, and the like of the insulating film 2, for example. However, since a part of the insulating film 4 constitutes the interlayer insulating film 14 that forms the capacitance of the MIM capacitor, a strict value is separately determined for the film thickness of the insulating film 4.

Next, although not shown, as a parameter measurement process that is a characteristic process of the present invention, the in-plane distribution of the film thickness of the interlayer insulating film 14 (insulating film 4) of the MIM capacitor 8 is measured. That is, in the present embodiment, the film thickness of the interlayer insulating film 14 (insulating film 4) is measured as a parameter of the electronic component element manufactured in the previous process. The film thickness is measured using, for example, an optical film thickness meter.

As described above, in the present embodiment, 7000 electronic components 100 including the MIM capacitor 8 are formed on one wafer. The film thickness of the interlayer insulating film 14 (insulating film 4) of the MIM capacitor 8 may vary due to processing variations and the like. This variation in film thickness may occur between wafers, but may also occur from region to region within a single wafer.

Therefore, in this embodiment, one wafer is divided into a plurality of regions, and the film thickness of the interlayer insulating film 14 (insulating film 4) is measured for each of the sections. The pattern shape of the exposed photoresist is corrected. If the above division is set for each region where each MIM type capacitor 8 of each electronic component of the wafer is formed, the pattern shape of the photoresist can be corrected for each MIM type capacitor 8, and the MIM type capacitor can be corrected. The characteristic accuracy of 8 can be remarkably improved.

Incidentally, the quantity of electricity Q (C) stored in the MIM type capacitor is represented by Q = CV. Here, C is a capacitance (F). V is a voltage (V).

The capacitance C (F) of the capacitor is expressed by C = εS / d. Here, ε is the dielectric constant of the interlayer insulating film 14. S is an opposing area (m ² ) between the first electrode 13 and the second electrode 15 (to be described later) facing each other across the interlayer insulating film 14. d is the film thickness (m) of the interlayer insulating film 14.

Therefore, in order to keep the capacitance C of the capacitor at a predetermined specified value, the size of the second electrode 15 is corrected in accordance with the processing variation of the film thickness of the interlayer insulating film 14, and the first electrode 13 is corrected. What is necessary is just to correct the facing area S between the first electrode 15 and the second electrode 15. Specifically, when the thickness of the interlayer insulating film 14 is smaller than a predetermined specified value, the size of the second electrode 15 is reduced and the first electrode 13 and the second electrode 15 are opposed to each other. What is necessary is just to make the area S small. On the contrary, when the film thickness of the interlayer insulating film 14 is larger than a predetermined value, the size of the second electrode 15 is increased and the facing area S between the first electrode 13 and the second electrode 15 is increased. Should be increased.

As described above, the capacitance C of the capacitor is proportional to the facing area S between the first electrode and the second electrode, and inversely proportional to the film thickness d of the interlayer insulating film. Therefore, in order to form a capacitor having a large capacitance C in a space-saving manner, the facing area S between the first electrode and the second electrode cannot be increased so much, and the film thickness d of the interlayer insulating film is reduced. I had to. For this reason, if the film thickness d of the interlayer insulating film has a variation in processing, the capacitance C varies greatly, and it is easy to easily deviate from the specified value range. That is, the variation in processing of the film thickness d of the interlayer insulating film is a major cause of a decrease in the yield of the MIM type capacitor. The present invention contributes to solving such problems.

Next, as shown in FIG. 1C, a conductive film 5 is formed on the insulating film 4 (interlayer insulating film 14). The material, film thickness, formation method, and the like of the conductive film 5 can be the same as the material, film thickness, formation method, and the like of the conductive film 3, for example. As will be described later, the conductive film 5 is etched to become the second electrode 15 of the MIM type capacitor.

Next, as shown in FIG. 1D, a photoresist 6 is formed on the conductive film 5. The material, film thickness, formation method, and the like of the photoresist 6 are arbitrary. Further, it is optional whether the photoresist 6 is a positive type or a negative type. The photoresist 6 is used for etching the conductive film 5 as will be described later.

Next, as shown in FIG. 2A, the photoresist 6 is exposed to a desired pattern shape by a direct drawing method without using a photomask.

Specifically, the following correction process is performed.
First, based on the thickness of the interlayer insulating film 14 (insulating film 4) obtained by measurement, the pattern of the second electrode 15 is corrected so that the variation in capacitance due to the variation in film thickness is reduced. For this purpose, DMD pattern data is prepared. Then, pattern exposure is performed using the pattern data. By this step, the MIM type capacitor 8 having a capacitance that does not depend on the film thickness variation of the interlayer insulating film 14 (insulating film 4) can be obtained.

This step is a photoresist exposure step which is a characteristic step of the present invention, and is obtained in the parameter measurement step described above, depending on the thickness of the interlayer insulating film 14 (insulating film 4) for each of the sections. This is performed while correcting the pattern shape exposed for each section. As described above, in each section, when the thickness of the interlayer insulating film 14 (insulating film 4) is smaller than a predetermined value, the interlayer insulating film is reduced so that the size of the second electrode 15 is reduced. When the film thickness of 14 (insulating film 4) is larger than a predetermined value, the pattern shape to be exposed is corrected so that the size of the second electrode 15 is increased.

The photoresist exposure process is performed using the direct drawing type exposure apparatus 7. Although details of the exposure apparatus 7 are arbitrary, for example, a light source 7a, a DMD 7b, and a focus lens 7c are provided. The DMD 7b includes a large number of micromirrors (for example, hundreds of thousands), and a desired exposure pattern shape can be created by electronically controlling the inclination of each micromirror.

Next, as shown in FIG. 2B, the photoresist 6 is developed.
Next, as shown in FIG. 2C, the conductive film 5 is etched using the photoresist 6 to form the second electrode 15 of the MIM capacitor 8.

In the present embodiment, the conductive film 5 is formed first, and then the conductive film 5 is etched using the photoresist 6 to form the second electrode 15 of the MIM type capacitor 8. Alternatively, the pattern shape formed on the photoresist 6 can be reversed, and the second electrode 15 of the MIM capacitor 8 can be formed by a lift-off process.

Next, as shown in FIG. 2D, the photoresist 6 is removed, and the MIM capacitor 8 is completed. Since the MIM type capacitor 8 corrects the pattern shape of the second electrode 15 based on the processing variation of the film thickness of the interlayer insulating film 14, the MIM type capacitor 8 has an appropriate capacitance characteristic within a specified value range. .

Thereafter, although not shown, a film forming process, a photolithography process, an etching process, a wafer cutting process, and the like are further performed as necessary, and the first electrode 13, the interlayer insulating film 14, and the second electrode 15 are used. The electronic component 100 including the MIM type capacitor 8 is completed.

The method for manufacturing the electronic component 100 according to the embodiment of the present invention has been described above.
However, the present invention is not limited to the contents described above, and various modifications can be made in accordance with the spirit of the invention.

For example, in the above-described embodiment, the method for manufacturing the electronic component 100 including the MIM type capacitor 8 is shown. However, the type of the electronic component manufactured by the present invention is arbitrary and is not limited thereto. For example, a semiconductor device or a piezoelectric device may be used.

In the above-described embodiment, the film thickness of the interlayer insulating film 14 of the MIM capacitor is measured in the parameter measurement process, and the photoconductive film 5 is etched to form the second electrode 15 in the photoresist exposure process. Although the pattern shape of the resist 6 is corrected, the electronic component element parameter measured in the parameter measurement process and the photoresist corrected in the photoresist exposure process are used for forming the photoresist. These are also arbitrary, and are not limited to the above-described contents.

(Embodiment 2)
In the present embodiment, an electronic component manufacturing method will be described by exemplifying an electronic component including a vibration device.

FIG. 3 is a perspective view showing a vibration device according to Embodiment 2 of the present invention. FIG. 4 is a cross-sectional view taken along the line IV-IV shown in FIG. With reference to FIG. 3 and FIG. 4, the vibration apparatus 40 which concerns on this embodiment is demonstrated.

As shown in FIGS. 3 and 4, the vibration device 40 is a resonance-type vibrator including the support portion 20 and the vibrating

arms

30a, 30b, and 30c. The base ends of the vibrating

arms

30 a, 30 b, and 30 c are connected to the support unit 20.

The vibrating

arms

30a, 30b, and 30c are provided so as to extend from the support portion 20. The vibrating

arms

30a, 30b, and 30c have a cantilever structure. The tips of the vibrating

arms

30a, 30b, and 30c are free ends. Therefore, the vibrating

arms

30a, 30b, and 30c are configured to be able to vibrate.

Side frames 50 and 60 are connected to both ends of the support portion 20 in the direction in which the vibrating

arms

30a, 30b, and 30c are arranged so as to extend in parallel with the vibrating

arms

30a, 30b, and 30c. The support part 20 and the side frames 50 and 60 are integrally formed by a photolithography method or the like.

As shown in FIG. 4, the vibrating

arms

30a, 30b, 30c are composed of a silicon oxide film 32, a Si layer 31 as a vibrating part, a silicon oxide film 33, and an exciting part 34. The silicon oxide film 32, the Si layer 31, the silicon oxide film 33, and the excitation unit 34 are stacked in this order.

Si layer 31 is made of, for example, an n-type Si semiconductor that is a degenerate semiconductor. The doping concentration of the n-type dopant is 1 × 10 ¹⁹ / cm ³ or more. As the n-type dopant, a fifteenth element such as P, As, or Sb can be employed.

The Si layer 31 is sandwiched between the silicon oxide film 32 and the silicon oxide film 33. A silicon oxide film 32 is provided on the lower surface of the Si layer 31. A silicon oxide film 33 is provided on the upper surface of the Si layer 31. The silicon oxide film 32 and the silicon oxide film 33 are made of, for example, SiO ₂ .

Note that the silicon oxide film 32 and the silicon oxide film 33 are not limited to SiO ₂ and can be formed of a silicon oxide material having an appropriate composition of SiaOb (a and b are integers). Further, the silicon oxide film 32 and the silicon oxide film 33 may be omitted.

An excitation unit 34 is provided above the silicon oxide film 33. The excitation unit 34 includes a first electrode 36, a piezoelectric thin film 35, and a second electrode 37. The first electrode 36, the piezoelectric thin film 35, and the second electrode 37 are stacked in this order. The first electrode 36 and the second electrode 37 are provided so as to sandwich the piezoelectric thin film 35 therebetween.

Further, a piezoelectric thin film 35 a is provided on the upper surface of the silicon oxide film 33. Further, a piezoelectric thin film 35 b is provided on the upper surface of the piezoelectric thin film 35 so as to cover the second electrode 37. The piezoelectric thin film 35a functions as a seed layer. The piezoelectric thin film 35b functions as a protective layer. The piezoelectric thin films 35a and 35b do not constitute the excitation unit 34, and may be omitted.

Although the piezoelectric material which comprises the piezoelectric thin film 35 is not specifically limited, In the vibration apparatus using a bulk wave, it is preferable that Q value is high. For this reason, AlN having a small electromechanical coupling coefficient k ² but a high Q value is preferably used.

However, ZnO, Sc-substituted AlN, PZT, KNN, etc. may be used. The Sc-substituted AlN film (ScAlN) preferably has an atomic concentration of Sc and Al of about 100 at% to 50 at%.

ScAlN has an electromechanical coupling coefficient k ² larger than that of AlN and a mechanical Qm larger than that of PZT and KNN. Therefore, ScAlN has the following advantages when applied to a resonance type resonator. There is an oscillator as an application of the resonance type vibrator. For example, in a TCXO (temperature compensated oscillator), a signal from a built-in temperature sensor is fed back to a variable capacitance element connected in series with a vibrator to change the capacitance value of the variable capacitance element. Thereby, the oscillation frequency can be adjusted. At this time, if ScAlN is used instead of AlN as the piezoelectric thin film, the specific band of the resonant vibrator is expanded. Thereby, the adjustment range of the oscillation frequency can be expanded.

Similarly, when ScAlN is used in a VCXO (voltage controlled oscillator), since the adjustment range of the oscillation frequency is widened, the initial frequency variation of the resonance type vibrator can be adjusted by the variable capacitance element, and the cost of the frequency adjustment process is reduced. Significantly reduced.

The first electrode 36 and the second electrode 37 can be formed of an appropriate metal such as Mo, Ru, Pt, Ti, Cr, Al, Cu, Ag, or an alloy thereof.

The piezoelectric thin film 35 is polarized in the thickness direction. For this reason, by applying an alternating electric field between the first electrode 36 and the second electrode 37, the excitation unit 34 is excited by the piezoelectric effect. As a result, the vibrating

arms

30a, 30b, 30c bend and vibrate in the vertical direction.

The vibrating arm 30b located in the center and the vibrating

arms

30a and 30c located on both sides of the vibrating arm 30b bend and vibrate in the vertical direction with opposite phases. This can be achieved by setting the phase of the alternating electric field applied to the vibrating

arms

30a and 30c and the phase of the alternating electric field applied to the vibrating arm 30b to opposite phases. Alternatively, the polarization direction of the piezoelectric thin film 35 may be reversed between the vibrating arm 30b located in the center and the vibrating

arms

30a and 30c located on both sides thereof.

The side frames 50 and 60 are configured by laminating the silicon oxide film 22, the Si substrate 21, the silicon oxide film 32, the Si layer 31, the silicon oxide film 33, and the piezoelectric thin film 35. The support portion 20 is configured similarly to the side frames 50 and 60.

A recess 21 a is formed on the upper surface of the Si substrate 21. The vibrating

arms

30a, 30b, and 30c are disposed above the recess 21a. The Si substrate 21 is a support substrate that constitutes a part of the support unit 20 and the side frames 50 and 60. The silicon oxide film 22 is a protective film and is provided on the lower surface of the Si substrate 21.

FIGS. 5A to 5D are cross-sectional views showing steps performed in the manufacturing method according to Embodiment 2 of the present invention. 6 (a) to 6 (c) are diagrams subsequent to FIG. 5 (d) and showing steps performed in the manufacturing method according to the embodiment of the present invention. FIGS. 7 (a) and 7 (b) are diagrams continuing from FIG. 6 (c) and showing steps performed in the manufacturing method according to Embodiment 2 of the present invention. 8 (a) and 8 (b) are diagrams subsequent to FIG. 7 (b) and showing steps performed in the manufacturing method according to Embodiment 2 of the present invention.

With reference to FIGS. 5 (a) to (d), FIGS. 6 (a) to (c), FIGS. 7 (a) and (b), and FIGS. 8 (a) and 8 (b), vibration as an electronic component A method for manufacturing the device 40 will be described.

First, as shown in FIG. 5A, a Si substrate 21 is prepared. A recess 21a is formed on the upper surface of the Si substrate 21 by etching. The depth of the recess 21a may be about 10 μm to 30 μm.

Next, as shown in FIG. 5B, a Si layer 31 having a doping concentration of 1 × 10 ¹⁹ / cm ³ or more and doped with P is prepared, and a silicon oxide film 32 is formed on the upper and lower surfaces of the Si layer 31. 33A is formed. The

silicon oxide films

32 and 33A are formed by a thermal oxidation method. A silicon oxide film formed by a thermal oxidation method is preferable because the Q value hardly deteriorates. The thickness of the

silicon oxide films

32 and 33A is 0.4 μm.

Subsequently, as shown in FIG. 5C, the Si layer 31 on which the

silicon oxide films

32 and 33 </ b> A are formed is laminated on the Si substrate 21. At the time of stacking, the silicon oxide film 32 is brought into contact with the surface of the Si substrate 21 on which the concave portion 21a is provided.

Next, as shown in FIG. 5D, the silicon oxide film 33A is removed by polishing, and the thickness of the Si layer 31 is further reduced. Thereby, the thickness of the Si layer 31 is set to about 10 μm.

Subsequently, although not shown, the in-plane thickness distribution of the Si layer 31 is measured as a parameter measurement process that is a characteristic process of the present invention. That is, in this embodiment, the film thickness of the Si layer 31 as the vibration part is measured as a parameter of the electronic component element produced in the previous process. The film thickness is measured using, for example, an optical film thickness system.

In this embodiment, for example, several thousand electronic parts 100 including the vibration device 40 are formed on one wafer. The Si layer 31 of the vibration device 40 may vary in film thickness due to processing variations or the like. This variation in film thickness may occur between wafers, but may also occur from region to region within a single wafer.

Therefore, in this embodiment, one wafer is divided into a plurality of regions, the film thickness of the Si layer 31 is measured for each of the regions, and in the photoresist exposure process described later, the photoresist exposed for each of the regions is measured. Correct the pattern shape.

If the above division is set for each region where each vibration device 40 of each electronic component of the wafer is formed, the pattern shape of the photoresist can be corrected for each vibration device 40, and the characteristics of the vibration device 40 can be corrected. The accuracy can be greatly improved.

By the way, the resonance frequency fr of the vibrating

arms

30a, 30b, and 30c included in the vibrating device 40 is expressed by the following mathematical formula (1).

For this reason, in order to maintain the resonance frequency fr between the plurality of vibration devices 40 at a predetermined specified value, the lengths of the vibrating

arms

30a, 30b, and 30c are corrected according to the variation in the film thickness of the Si layer 31. do it.

Specifically, when the thickness of the Si layer 31 is smaller than a predetermined value, the lengths of the vibrating

arms

30a, 30b, and 30c are shortened. Conversely, when the film thickness of the Si layer 31 is larger than a predetermined value, the lengths of the vibrating

arms

30a, 30b, and 30c are increased. A method for correcting the length of the vibrating

arms

30a, 30b, and 30c will be described later with reference to FIGS. 8A, 8B, and 9. FIG.

When the lengths of the vibrating

arms

30a, 30b, and 30c are not corrected, the resonance frequency fr varies greatly between the plurality of vibrating devices 40 according to the film thickness distribution of the Si layer 31, and it is easy from the specified value range. It was easy to come off. That is, the variation in the film thickness of the Si layer 31 is a major cause of a decrease in the yield of the vibration device 40. The present invention contributes to solving such problems.

Next, as shown in FIG. 6A, a silicon oxide film 33 is formed on the upper surface of the Si layer 31 and a silicon oxide film 22 is formed on the lower surface of the Si substrate 21 by thermal oxidation. The thickness of the silicon oxide film 33 is 0.4 μm.

Subsequently, as shown in FIG. 6B, after the piezoelectric thin film 35a made of AlN having a thickness of about 30 nm to 100 nm is formed on the upper surface of the silicon oxide film 33, the first electrode 36 is formed on the upper surface of the piezoelectric thin film 35a. Form. The first electrode 36 is a laminated electrode in which a first layer made of Mo and a second layer made of Al are laminated. The piezoelectric thin film 35a is a seed layer, and by providing the piezoelectric thin film 35a, the first layer made of Mo in the first electrode 36 is formed with high orientation.

Next, as shown in FIG. 6C, after the piezoelectric thin film 35 made of AlN is formed on the upper surfaces of the piezoelectric thin film 35 a and the first electrode 36, the second electrode 37 is formed on the upper surface of the piezoelectric thin film 35. The second electrode 37 is a laminated electrode in which a first layer made of Mo and a second layer made of Al are laminated. The first electrode 36 and the second electrode 37 are formed by, for example, a lift-off process using a sputtering method.

Subsequently, as shown in FIG. 7A, a piezoelectric thin film 35b made of AlN is formed on the upper surface of the piezoelectric thin film 35 and the second electrode 37 to a thickness of about 30 nm to 100 nm.

Next, although not shown, a photoresist 70 is applied on the piezoelectric thin film 35b in a photoresist application process. The material, film thickness, formation method, and the like of the photoresist 70 are arbitrary. Further, it is optional whether the photoresist 70 is a positive type or a negative type. The photoresist 70 is used to etch the piezoelectric

thin films

35b, 35, 35a, the silicon oxide film 33, the Si layer 31, and the silicon oxide film 32, as will be described later.

Next, as shown in FIG. 7B, the photoresist 70 is exposed to a desired pattern shape by a direct drawing method without using a photomask.

Specifically, the following correction process is performed.
First, based on the film thickness of the Si layer 31 obtained by the measurement, the lengths of the vibrating

arms

30a, 30b, and 30c are corrected so that the variation in the resonance frequency fr due to the film thickness variation is reduced. DMD pattern data is created. Then, pattern exposure is performed using the pattern data.

This step is a photoresist exposure step which is a characteristic step of the present invention, and exposure is performed for each section according to the film thickness of the Si layer 31 for each section obtained in the parameter measurement step described above. This is performed while correcting the pattern shape. As described above, in each section, when the thickness of the Si layer 31 is smaller than a predetermined value, the pattern shape to be exposed is set so that the lengths of the vibrating

arms

30a, 30b, and 30c are shortened. to correct. On the other hand, when the thickness of the Si layer 31 is larger than a predetermined value, the exposed pattern shape is corrected so that the lengths of the vibrating

arms

30a, 30b, and 30c are increased.

Next, as shown in FIG. 8A, the photoresist 70 is developed in a development process. Thereby, the photoresist 70 is panned into a desired shape. FIG. 9 is a plan view showing a state in which the photoresist is patterned in FIG.

As shown in FIG. 9, the photoresist 70 is patterned so as to cover portions corresponding to the support portion 20, the side frames 50, 60, and the vibrating

arms

30a, 30b, 30c. By correcting the exposed pattern shape as described above, the length from the proximal end to the distal end of the portion of the photoresist 70 corresponding to the vibrating

arms

30a, 30b, 30c can be adjusted.

Subsequently, as shown in FIG. 8B, the vibrating

arms

30a, 30b, 30c and the side having a predetermined length are formed by dry etching or wet etching using a photoresist 70 patterned in a desired shape. The

frames

50 and 60 are formed, and the vibration device 40 is manufactured.

As described above, in the present embodiment, the thickness of the Si layer is measured, and the exposed pattern shape is corrected for each region where the vibration device 40 is formed according to the measured thickness. By patterning the photoresist 70 in the shape, the length of the vibrating

arms

30a, 30b, 30c can be adjusted. Thereby, the dispersion | variation in the resonant frequency fr between the oscillating devices 40 can be suppressed, and characteristic accuracy can be improved significantly. As a result, a decrease in yield of the vibration device 40 can be suppressed.

In Embodiment 2 described above, the case where the pattern shape to be exposed is corrected for each region where the vibration device 40 is formed is described as an example. However, the present invention is not limited to this, and one vibration device 40 is formed. The pattern shape to be exposed may be corrected so that the lengths of the vibrating

arms

30a, 30b, and 30c are different depending on the thickness of the Si layer.

As mentioned above, although embodiment of this invention was described, embodiment disclosed this time is an illustration and restrictive at no points. The scope of the present invention is defined by the terms of the claims, and includes meanings equivalent to the terms of the claims and all changes within the scope.

1 substrate, 2, 4 insulating film, 5 conductive film, 6 resist, 7 direct drawing type exposure apparatus, 8 MIM type capacitor, 13 first electrode (formed from conductive film 3), 14 interlayer insulating film (insulating) 15 formed from the film 4), 15 second electrode (formed from the conductive film 5), 20 support part, 21 substrate, 21a recess, 22 silicon oxide film, 30a, 30b, 30c vibrating arm, 31 Si layer , 32, 33, 33A silicon oxide film, 34 excitation part, 35, 35a, 35b piezoelectric thin film, 36 first electrode, 37 second electrode, 40 vibration device, 50, 60 side frame, 100 electronic component, 101 substrate, 102 Semiconductor part, 102a active layer, 103 insulator part, 104 gate electrode, 104A conductor, 106 photomask, 200 semiconductor device

Claims

A parameter measuring step for measuring parameters of the electronic component element produced in the previous step;
A photoresist coating process;
A photoresist exposure process using a direct drawing method;
A photoresist development process,
The photoresist exposure step creates pattern data corrected so as to reduce the variation in the parameter based on the parameter obtained in the parameter measurement step, and performs pattern exposure using the pattern data. Production method.
The electronic component includes a MIM type capacitor in which a first electrode, an interlayer insulating film, and a second electrode are stacked.
The parameter measured in the parameter measurement step is the film thickness of the interlayer insulating film,
The method for manufacturing an electronic component according to claim 1, wherein the pattern shape corrected in the photoresist exposure step is a pattern shape for forming the second electrode.
The photoresist exposure process includes
When the film thickness of the interlayer insulating film measured in the parameter measurement step is smaller than a predetermined value, the shape of the second electrode is made smaller than a predetermined value. Correct the size of the pattern shape,
When the film thickness of the interlayer insulating film measured in the parameter measurement step is larger than a predetermined value, the shape of the second electrode is set to be larger than a predetermined value. The method for manufacturing an electronic component according to claim 2, wherein the size of the pattern shape is corrected.
The electronic component includes a vibrator and a vibrator that is formed on the vibrator and has an excitation unit for vibrating the vibrator.
The parameter measured in the parameter measurement step is the thickness of the vibrating part,
The method for manufacturing an electronic component according to claim 1, wherein the pattern shape corrected in the photoresist exposure step is a pattern shape for specifying the shape of the vibrating portion.
A plurality of the electronic components are formed on one wafer;
In the parameter measurement step, the wafer is divided into a plurality of regions, and the parameters of the electronic component elements are measured for each division.
5. The method of manufacturing an electronic component according to claim 1, wherein the photoresist exposure step corrects the pattern shape for each of the sections. 6.