WO2016016331A1

WO2016016331A1 - Optoelectronic component and method for producing an optoelectronic component

Info

Publication number: WO2016016331A1
Application number: PCT/EP2015/067426
Authority: WO
Inventors: Johannes Rosenberger; Daniel Riedel; Nina Riegel; Silke SCHARNER; Arne FLEISSNER; Thomas Wehlus
Original assignee: Osram Oled Gmbh
Priority date: 2014-08-01
Filing date: 2015-07-29
Publication date: 2016-02-04
Also published as: DE102014110971A1

Abstract

An optoelectronic component is specified, comprising a functional layer stack (6) having an organic active layer (63) and a coupling-out layer (1) embodied in a mechanically stable fashion, wherein the organic active layer (63) emits electromagnetic radiation during the operation of the component, the functional layer stack (6) is arranged on the coupling-out layer (1), the coupling-out layer (1) has internal scattering elements (12), and the coupling-out layer (1) has a refractive index (n1) that is at least 80% of a refractive index (n2) of the layer stack (6). Furthermore, a method for producing such a component is specified, wherein the functional layer stack (6) is applied to a sacrificial substrate (9) and the sacrificial substrate is removed from the layer stack (6) in a subsequent method step.

Description

description

Optoelectronic component and method for producing an optoelectronic component

The present application relates to an optoelectronic component and a method for producing a

optoelectronic component. An organic light-emitting diode (OLED) may comprise a functional layer stack arranged on a glass carrier, wherein light emitted by the layer stack passes through the glass carrier before it is decoupled from the OLED. On the glass carrier can external

Scattering layers, in particular microlenses, are applied to increase the degree of radiation extraction. The

Processing of OLEDs on glass slides with external

Scattering or microlenses, however, proves to be costly. In addition, the absorption losses within the relatively thick glass substrates reduce the

Efficiency of organic light-emitting diodes.

One task is to produce a simplified

Optoelectronic device with a high

Specify radiation decoupling. As another

Task becomes a reliable, simplified and

cost-effective method for producing a

specified optoelectronic component. According to at least one embodiment of a component, this has a functional layer stack. Of the

functional layer stack contains in particular a

Plurality of organic layers. The functional Layer stack comprises, for example, an organic active layer, which during operation of the device

electromagnetic radiation, such as UV radiation, visible light or infrared radiation emitted. In addition, the functional layer stack has, for example, an organic layer embodied as a hole transport layer and an organic layer designed as an electron transport layer. In particular, the active organic layer is arranged in the vertical direction between the hole transport layer and the electron transport layer. A vertical direction is understood to mean a direction that is perpendicular to a main extension plane of the organic active layer. In particular, that is

Component an OLED.

According to at least one embodiment of the component, this has a mechanically stable coupling-out layer. The functional layer stack is arranged on the coupling-out layer. A mechanically stable decoupling layer is understood as meaning a layer which is designed to be cantilevered in particular. That is, the mechanically stable

Decoupling layer can rely on itself and is stable to the Eigenschraft force. For example, the coupling-out layer is suitable

Material selection and corresponding thickness configuration formed mechanically stable so that the decoupling layer can carry at least the functional layer stack, without being mechanically deformed due to the Eigenschwerkraft. Furthermore, the coupling-out layer can be used as a

Carrier body of the device to be formed. The latter means that the decoupling layer in particular the entire Optoelectronic device gives sufficient mechanical stability.

In accordance with at least one embodiment of the component, the coupling-out layer has a radiation exit surface of the component on a side facing away from the layer stack. In particular, the coupling-out layer is permeable to the electromagnetic radiation generated during operation of the component. The decoupling layer can be clear,

be transparent or milky cloudy.

In accordance with at least one embodiment of the component, the coupling-out layer has inner scattering elements. Under inner scattering elements of the coupling-out are in particular

Scattering centers understood in the interior of the decoupling layer.

For example, the inner scattering elements of a

Material of the decoupling layer completely surrounded on all sides. The radiation emitted by the organic active layer during operation of the component is scattered at the scattering elements of the coupling-out layer, before being applied to the diffuser

Radiation exit surface is coupled out of the device, whereby the Strahlungsauskopplungsgrad of the device is improved.

In accordance with at least one embodiment of the component, the coupling-out layer has a refractive index which is at least 80% of a refractive index of the layer stack. Among a refractive index of a layer is in particular the refractive index of the material forming the layer

Understood. For example, if the layer has multiple layers

Partial layers and / or more materials, is below a refractive index of the layer in particular the

average refractive index of this layer understood. The refractive index is determined at a radiation wavelength which is encompassed by the electromagnetic radiation generated during operation of the component. For example, the refractive indices are determined at a wavelength of 500 nm. In particular, it is possible that the said relationship of the refractive indices of decoupling layer and

Layer stack for the entire wavelength range of the electromagnetic generated during operation of the device

Radiation is fulfilled.

If the refractive index of the coupling-out layer is at least 80% of the refractive index of the layer stack, then

Radiation losses due to total reflections during

Transition of the emitted radiation from the stack of layers to the coupling-out layer are largely suppressed, so that the coupling of the emitted radiation from the device is designed to be particularly efficient. In at least one embodiment of the optoelectronic

Component, this has a functional layer stack with an organic active layer and a mechanically stable Auskoppelschicht, wherein the

functional layer stacks on the decoupling layer

is arranged. The organic active layer emits electromagnetic radiation during operation of the device. The decoupling layer has internal scattering elements. The

Decoupling layer and the layer stack each have a refractive index, wherein the refractive index of the

Decoupling layer is at least 80% of the refractive index of the layer stack. Due to the material, the functional layer stack often has a high refractive index, for example around 1.7. Is the

Refractive index of the coupling-out layer at least approximately equal to or higher than the refractive index of the

Layer stack, light losses due to

Total reflections in the radiation transition of the

Layers stack to Auskoppelschicht be greatly reduced. The efficiency of the radiation decoupling can by

Scattering effects on the inner scattering elements within the coupling-out layer are additionally increased. Furthermore, it is possible to dispense with external scattering layers or microlenses which are applied to the carrier body or to the coupling-out layer of the component, as a result of which the production of such an optoelectronic component is simplified as a whole. Through the education of

Scattering elements within the coupling-out layer can be

simplified, cost-effective method for producing such an optoelectronic device are used, wherein the coupling-out layer in the case as

Carrier body of the device can be made particularly thin, whereby light losses due to absorption in the decoupling layer or in the carrier body of the device can be reduced. In accordance with at least one embodiment of the component, the refractive index of the coupling-out layer is at least 1.6,

in particular at least 1.7 or at least 2. For example, the coupling-out layer is formed from a material having a refractive index, in particular between 1.6 and 4

for example between 1.6 and 3 or between 2 and 3. For example, the decoupling layer in

Compared to the glass on a larger refractive index. In particular, the refractive index of the coupling-out layer is greater than the refractive index of the layer stack.

In accordance with at least one embodiment variant of the component, the component is free of an intermediate layer, which in

vertical direction between the layer stack and the decoupling layer, wherein the intermediate layer has a refractive index which is smaller than that

Refractive index of the functional layer stack,

In particular, less than 80% of the refractive index of the functional layer stack is. Such

Embodiment of the device favors a low-loss radiation transition from the functional layer stack to the coupling-out layer. Alternatively, the device can a

between the layer stack and the decoupling layer

having arranged intermediate layer, wherein a

Refractive index of the intermediate layer is adapted to the refractive index of the layer stack. In particular, the refractive index of the intermediate layer differs from the refractive index of the layer stack by at most 20%, for example by at most 10%, by at most 5 ~ 6. For example, the intermediate layer has one or more metal oxides

Metal oxides, such as A1203, Zr02 or Ti02. According to at least one embodiment of the component, the latter is free on a side of the coupling-out layer facing away from the layer stack from a layer formed as a carrier body of the component. In particular, the component between the functional layer stack and the radiation exit surface only has a layer formed as a carrier body of the component, which layer

Decoupling layer with the inner scattering elements is. In particular, the device is free of a boundary layer between the coupling-out layer and a glass layer.

In accordance with at least one embodiment of the device, the coupling-out layer has a vertical thickness which is between 10 μm inclusive and 300 μm inclusive, in particular between 20 μm inclusive and 200 μm inclusive, for example between 20 μm and 20 μm inclusive

including 100 ym, is.

In accordance with at least one embodiment of the component, the coupling-out layer is designed to be bendable. For example, the decoupling layer has a flexible, in particular an elastically yielding material. For example, the

Decoupling layer compared to the glass a smaller

Elastic modulus on. For example, the

Modulus of elasticity of the coupling-out layer under standard conditions less than 70 kN / mm 2, for example less than 50 kN / mm 2, in particular less than 40 kN / mm 2. An optoelectronic component with a flexible coupling-out layer can be particularly simplified on uneven, for example crooked

Surface to be mounted. In particular, the

Decoupling layer free of glass or free of one

glass-containing material.

In accordance with at least one embodiment of the component, the inner scattering elements are embedded in a high-index material of the coupling-out layer. A high-index material is understood as meaning a material which in particular has a refractive index of at least 1.6, for example 1.7 or higher, about 2 or higher. The inner scattering elements are in particular scattering particles, for example of titanium oxide or silicon oxide. In accordance with at least one embodiment of the component, a conversion material, in particular in the form of

Phosphor particles embedded in the high refractive index material of the decoupling layer. The conversion material absorbs the radiation generated by the active layer at a first wavelength and converts it into radiation having a second wavelength different from the first wavelength. In particular, the first and second wavelengths are each a peak wavelength or a dominant wavelength of the corresponding radiation. For example, the scattering elements differ from the

Conversion material or from the

Phosphor particles by the fact that the scattering elements are optically inactive. That is, the scattering elements absorb no or only little radiation with a first wavelength and do not convert them into radiation with a second wavelength different from the first wavelength.

In accordance with at least one embodiment of the component, the coupling-out layer is designed to be multi-layered. In particular, the multilayer coupling-out layer has a scattering layer with the inner scattering elements. Furthermore, the coupling-out layer may have a partial layer which adjoins the scattering layer, wherein the partial layer is free of the inner scattering elements. In particular, the

Partial layer on a greater thickness than the litter layer on. The scattering layer and the sub-layer can have the same high-index material. It is, however

possible that the litter layer and the sublayer

have different high refractive materials. The Decoupling layer may also have a plurality of scattering layers and / or sub-layers.

According to at least one embodiment of the component, this one between the coupling-out and the

Layer stack arranged on barrier layer. The

Barrier layer can protect the functional layer stack from environmental influences such as humidity or noxious gases

protect. In addition, the barrier layer as a

Planarisierungsschicht serve for the layers arranged thereon. Although the barrier layer may depend on the

Forming the decoupling layer be optional increases the barrier layer in the presence of the protection of the

Layer stack and also simplifies the production of the layer stack to be applied to the barrier layer.

According to at least one embodiment of the component, this has an encapsulation layer. In particular, the functional layer stack is in plan view of the

Decoupling layer of the encapsulation layer completely covered. For example, the encapsulation layer completely covers the layer stack in the lateral direction.

A lateral direction is understood to mean a direction which, in the context of the manufacturing tolerance, is parallel to the direction of the production

Main extension plane of the organic active layer is directed. The vertical direction and the lateral

Direction are thus perpendicular to each other. Under one

Encapsulation layer is understood in particular a layer or a plurality of layers, the layer stack of the device at least partially or completely

encapsulated and this against environmental influences like

Humidity or harmful gases protects. In particular, the Encapsulation layer formed such that little or no humidity and no or hardly any substances in the gaseous state can pass through the encapsulation layer. According to at least one embodiment of the component, this has a protective layer. The encapsulation layer is in particular between the layer stack and the

Protective layer arranged. The encapsulation layer can thus be protected from external mechanical influences by the protective layer. In particular, the functional

Layer stack except for locations for electrical connections of the barrier layer and the encapsulation layer

completely encapsulated. The protective layer may be flexible, for example, bendable. For example, the protective layer has a lower modulus of elasticity than the glass. For example, the

Young's modulus of the protective layer under standard conditions less than 70 kN / mm ^, for example less than 50 kN / mm ^, in particular less than 40 kN / mm ^. In particular, the protective layer is a polymer layer.

In at least one embodiment of a method for producing an optoelectronic component which has a coupling-out layer with internal scattering elements and a

functional layer stack with an organic, im

Operation of the device electromagnetic radiation

has emitting layer is first a

Victim substrate provided. The decoupling layer is applied to the sacrificial substrate, wherein the decoupling layer is formed mechanically stable. The functional

Layer stack is applied to the decoupling layer, wherein the decoupling layer has a refractive index of at least 80% of a refractive index of the functional Layer stack is. Subsequently, the sacrificial substrate is removed from the device.

In such a method, the sacrificial substrate serves as a carrier of the entire electromagnetic device only during its manufacture. As in the production of the

Component mechanical loads are mainly carried by the sacrificial substrate, the coupling-out layer can be made particularly thin. In addition, such a method is particularly suitable for the production of a flexible organic component, in which in particular the coupling-out layer is designed to be flexible. For the

Victim substrate is basically a wide range of materials available, especially plastics or metals, which have a lower risk of breakage in the manufacture of the device compared to the glass, whereby the yield risk, for example due to possible

Glass breaks are eliminated. Furthermore, the sacrificial substrate can be reused, thereby reducing the manufacturing cost of such devices.

In accordance with at least one embodiment of the method, the decoupling layer is formed on the sacrificial substrate such that its thickness is between 10 μm and 10 μm

including 300 ym, especially between 20 ym inclusive and 200 ym inclusive, for example between 20 ym inclusive and 100 ym inclusive. A manufactured by such a method component has in

Compared to conventional OLEDs a lower vertical height between the functional layer stack and the

Radiation exit surface, whereby absorption losses are reduced and a higher proportion of generated

Radiation is decoupled. Also, this can be the Total thickness of the device can be reduced. For example, by this method, an organic

optoelectronic device having a total thickness of between 40 ym and 400 ym inclusive, for example between 40 ym and 200 ym inclusive.

In accordance with at least one embodiment of the method, the decoupling layer is applied to the sacrificial substrate by means of a wet-chemical method. For example, the

Decoupling layer formed as a multilayer coating. The coupling-out layer can have a plurality of layers which are arranged in layers on the sacrificial substrate

be applied. In particular, the majority of the

Layers of Auskoppelschicht a same high-index material.

In accordance with at least one embodiment of the method, the coupling-out layer is made of a high refractive index material

educated. The scattering elements, in particular in the form of

Scattering particles may be embedded in the high refractive material prior to application to the sacrificial substrate. It is also possible that, for the formation of the coupling-out layer, the high-indexing material is first applied to the sacrificial substrate and the scattering elements are applied to the high-index material, for example sprinkled, before a further layer of the high-indexing material is applied to the scattering elements. A last applied layer of the coupling-out layer can be used as a

Planarisierungsschicht be formed.

According to at least one embodiment of the method, a litter layer and at least one sub-layer of a high-refractive material layers applied to the substrate. The scattering layer has a plurality of scattering elements, in particular scattering particles. In particular, the sub-layer is free of the scattering elements. The sub-layer and the scattering layer can be formed so that the sub-layer

for example, has a greater thickness than the

Litter layer.

In accordance with at least one embodiment of the method, the sacrificial substrate is provided in the form of a film.

For example, the sacrificial substrate approximately comprises a metal

Aluminum or a plastic such as polyethylene terephthalate (PET). The decoupling layer is applied in particular directly to the sacrificial substrate. For example, this indicates

Sacrificial substrate compared to the glass a smaller one

Elastic modulus on. Upon completion of the device, the sacrificial substrate may be removed from the decoupling layer by a mechanical process, for example, peeled or peeled off the decoupling layer.

In accordance with at least one embodiment of the method, before application of the functional layer stack, a

Sacrificial layer applied directly to the sacrificial substrate. The decoupling layer is then applied to the

Applied sacrificial substrate, that the sacrificial layer between the decoupling layer and the sacrificial substrate is arranged.

The sacrificial substrate may comprise a metal, a plastic or a glass-containing material. In particular, the sacrificial substrate may be a glass body. For example, the sacrificial layer is a soluble lacquer or polymer layer.

In particular, the sacrificial layer may be temporary adhesives or having pyrolytic paints. Removing the

The sacrificial substrate of the device is in particular performed by the removal of the sacrificial layer.

In accordance with at least one embodiment of the method, a conversion material, in particular in the form of

Phosphorus particles introduced into the decoupling layer. The phosphor particles can be introduced into the coupling-out layer analogously to the scattering elements.

The method described in the present application is particularly suitable for the production of a device described above. Features described in connection with the component can therefore also be used for the method and vice versa.

Further advantages, preferred embodiments and

Further developments of the optoelectronic component and of the method are evident from the exemplary embodiments explained below in conjunction with FIGS. 1 to 3D. Show it:

Figure 1 is a schematic representation of a

Exemplary embodiment of an optoelectronic component,

Figure 2A shows another embodiment of a

Optoelectronic component in a schematic sectional view,

Figure 2B is a schematic representation of another

Embodiment of an optoelectronic device, and FIGS. 3A to 3D are schematic sectional views of different process stages of an exemplary embodiment for producing an optoelectronic component.

The same, similar or equivalent elements are provided in the figures with the same reference numerals. The figures are each schematic representations and therefore not necessarily to scale. Rather, comparatively small elements and in particular layer thicknesses for

Clarification exaggerated to be large.

A first exemplary embodiment of an optoelectronic component 10 is shown schematically in FIG.

The optoelectronic component 10 has a

Decoupling layer 1, one on the decoupling layer. 1

arranged functional layer stack 6 and a

Encapsulation layer 71 on. In the vertical direction of the layer stack 6 between the coupling-out layer 1 and the

Encapsulation layer 71 is arranged. In the lateral direction, the layer stack 6 is between a first

Insulation structure 4 and a second insulation structure 5 limited. In plan view of the decoupling layer. 1

The encapsulation layer 71 covers the layer stack 6, the first insulation structure 4 and the second one

Insulation structure 5 completely.

The functional layer stack 6 has an organic active layer 63. The active layer 63 emits electromagnetic radiation during operation of the device, for example in the ultraviolet, visible or infrared spectral range. The layer stack 6 also contains a first charge transport layer 61 and a second charge transport layer 62, wherein the organic active

Layer 63 is disposed between the first charge transport layer 61 and the second charge transport layer 62.

In particular, the first and the second

Charge transport layer in each case at least one organic material. For example, the first and the second charge transport layer are formed as an electron transport layer or as a hole transport layer or vice versa. These charge transport layers serve to inject the holes and the electrons into the organic active layer 63. The layer stack 6 has one

Refractive index n2, which may in particular be greater than 1.6, about 1.7 or higher, for example 2 or higher.

The coupling-out layer 1 is designed to be transmissive to radiation and has a radiation exit surface 11 of the component 10 on a side facing away from the layer stack 6. That is, the radiation generated during operation of the device 10 leaves the device, in particular at the

Radiation exit surface 11. The radiation exit surface 11 is free of a structuring or a scattering layer.

The decoupling layer 1 has internal scattering elements 12. The scattering elements 11 are in the interior of the decoupling layer. 1

In particular, the decoupling layer 1 has a high refractive index material in which the scattering elements 12 are embedded. The scattering elements 12 are distributed irregularly in the interior of the decoupling layer 1. It is also possible that the

Scattering elements 11 in the entire decoupling layer. 1

evenly distributed. The coupling-out layer has a refractive index n 1, which is in particular at least 80% of the refractive index n 2 of the layer stack 6. For example, the refractive index nl of the coupling-out layer is at least 1.6. For example, the coupling-out layer has a greater refractive index than the glass. Preferably, the refractive index nl of the coupling-out layer 1 is greater than the refractive index n2 of the layer stack 6. The radiation emitted during operation of the component from the organic active layer 63 can thus be coupled into the coupling-out layer 1 with little loss. The radiation coupled into the coupling-out layer 1 is scattered at the scattering elements 12 before it leaves the device 10 at the radiation exit surface 11, as a result of which

Coupling efficiency of the device 10 is improved.

The decoupling layer 1 is formed mechanically stable. The decoupling layer 1 is designed in particular as a carrier body of the component. The latter means that the

Decoupling layer is formed such that the device due to the decoupling not by his

Eigenschraft force is deformed and mechanically stable.

The decoupling layer 1 has a vertical thickness D1 which is, for example, between 10 μm and 300 μm, in particular between 20 μm and 200 μm, for example between 20 μm and 100 μm. The component 10 is free of a further carrier body of the component on a side of the decoupling layer 1 facing away from the layer stack 6. The

Radiation exit surface 11 is a surface of the

Decoupling layer 1 and limits the device 10 in

vertical direction. However, it is also conceivable that a radiation-permeable protective layer directly on the

Radiation exit surface 11 is arranged. The component 10 has a first electrode 2 and a second electrode 3 for electrical contacting of the

functional layer stack 6 on. The layer stack 6 is arranged in the vertical direction between the first electrode 2 and the second electrode 3. The first electrode 2 is transmissive to radiation and arranged between the coupling-out layer 1 and the layer stack 6. For example, the first electrode 2 has a transmission for the radiation generated by the organic active layer 63

at least 70%, preferably at least 80%, especially

preferably at least 90%, on. The first electrode may include transparent conductive materials, for example, transparent conductive oxides. Alternatively, the first electrode 2 can have a transparent layer with conductor tracks arranged thereon, for example silver nano-conductor tracks. It is also conceivable that such interconnects of the first

Electrode 2 are arranged directly on the coupling-out layer 1, so that the conductor tracks of the first electrode 2 are in direct physical contact both with the coupling-out layer 1 and with the layer stack 6.

The second electrode 3 is reflective, for example, for the radiation emitted during operation of the component 10

educated. For example, the second electrode 3 reflects at least 70%, preferably at least 90%, of the radiation impinging on the second electrode 3 in the direction of the coupling-out layer 1. The first electrode 2 has a first contact track 20, which is arranged laterally of the layer stack 6 in the lateral direction , The second electrode 3 has a second contact track 30, which also laterally of the Layer stack 6 is arranged. Via the first contact track 20 and the second contact track 30, the optoelectronic component 10 can be electrically contacted with an external current source.

In the figure 1 is a barrier layer 72 between the

Decoupling layer 1 and the layer stack 6 is arranged. The layer stack 6 is completely surrounded, in particular hermetically sealed, by the encapsulation layer 71 and by the barrier layer 72 in all directions. The

Encapsulation layer 71 and the barrier layer 72 thus protect the layer stack 6 from external environmental influences. It is also conceivable that the layer stack 6 is already adequately protected from the encapsulation layer 71 and the decoupling layer 1 from external environmental influences and that

Component 10 is free from such a barrier layer 72.

The device 10 also has a protective layer 70. The protective layer 70 is in particular as a

Scratch protective layer formed. In top view on the

Decoupling layer covers the protective layer 70 the

Encapsulation layer 71 completely, so that the

comparatively sensitive encapsulation layer 71 is protected from external mechanical influences. The

Protective layer 70 may be formed as a carrier body of the device 10. In such a case, the decoupling layer 1 can be made particularly thin.

For example, the protective layer 70 is flexible,

in particular bendable, trained. For example, the

Protective layer 70 is a polymer layer. The protective layer 70 has a vertical thickness D2, for example

between 20 ym and 200 ym, in particular between 20 ym and 100 ym is. The protective layer 70 limits the device 10 in the vertical direction.

The component 10 has a vertical total thickness D. The total thickness D is, for example, between 40 ym and 400 ym. In particular, the total thickness D may be between 40 ym and 300 ym, for example between 40 ym and 200 ym.

Figure 2A shows a schematic sectional view of a

Exemplary embodiment of an optoelectronic component.

This embodiment corresponds essentially to the exemplary embodiment of an optoelectronic component in FIG. 1. In contrast thereto, the coupling-out layer 1 has, in addition to the scattering elements 12, also a conversion material 15, which is in particular in the form of phosphor particles. The scattering elements 12 and the conversion material 15 can be embedded in the same high-index material of the coupling-out layer. Due to the clarity, in contrast to Figure 1, only a portion between the first insulating structure 4 and the second

Insulation structure 5 shown.

A further exemplary embodiment of an optoelectronic component 10 is shown schematically in sectional view in FIG. 2B. This embodiment corresponds to

Essentially that shown in Figure 2A

Embodiment. In contrast to this, the

Decoupling layer 1 a scattering layer 13 with the inner

Spreaders 12 on. Furthermore, the

Decoupling layer 1 on two partial layers 14. The

Litter layer 13 is in the vertical direction between the

Sublayers 14 are arranged. At least one of the partial layers 14 has a vertical thickness that is greater than a vertical thickness of the scattering layer 13. The partial layers 14 of the decoupling layer 1 are free of the inner

Spreader elements 12. The decoupling layer 1 can a

Have conversion material. In particular, a sub-layer 14 arranged between the layer stack 6 and the scattering layer 13 contains the conversion material,

for example in the form of phosphor particles. The scattering elements 12 are for example in one

embedded high-refractive material of the litter layer 13.

In particular, the scattering layer 13 and the partial layers 14 have the same high-index material. In particular, the high-index material has a refractive index which is at least 1.6, in particular at least 1.7, approximately at least 2.0. In the same way as in the exemplary embodiments in FIGS. 1 and 2A, that described in FIG

Decoupling layer 1 throughout the entire vertical height have the same high refractive index material. It is also conceivable that the scattering layer 13 is formed as a prefabricated scattering layer, which in the high-refractive

Material of the coupling-out layer 1 is embedded.

FIGS. 3A to 3D show different process stages of an exemplary embodiment for producing a

Optoelectronic component shown schematically.

In FIG. 3A, a sacrificial substrate 9 is provided. The sacrificial substrate 9 may be a glass body. Alternatively, the sacrificial substrate 9 may be formed of materials that have a lower modulus of elasticity than the glass

and / or have a lower risk of breakage. For example the sacrificial substrate 9 is made of a plastic, such as PET, or of a metal, such as aluminum.

On the sacrificial substrate 9, a sacrificial layer 8 is applied, for example by means of a coating process. The sacrificial layer 8 is in particular a soluble lacquer layer or a soluble polymer layer. Furthermore, the sacrificial layer may have temporary adhesives or pyrolytic paints. In particular, the sacrificial layer can be dissolved by supplying a chemical solution.

A decoupling layer 1 with inner scattering elements 12 is applied to the sacrificial substrate 9. The sacrificial layer 8 is arranged between the coupling-out layer 1 and the sacrificial substrate 9. By way of example, the coupling-out layer is applied to the sacrificial substrate by means of a coating method, for example a wet-chemical method. The

Decoupling layer 1 is formed such that it is mechanically stable and in particular as a carrier body for a functional applied thereto

Layer stack 6 or for the produced

Optoelectronic device 10 can serve. In particular, a vertical thickness of the coupling-out layer 1 is between 10 μm and 300 μm, for example between 20 μm and 200 μm, approximately between 20 μm and 100 μm. The decoupling layer 1 is formed in particular from a high refractive index material having a refractive index which is at least 1.6. The inner scattering elements 12 are doing in the

embedded in high-index material. The scattering elements 12 and / or the conversion material 15 can be distributed uniformly or unevenly in a part of the coupling-out layer 1 or in the entire coupling-out layer 1. To form the decoupling layer 1, at least one partial layer 14 of the high refractive index material and a

Litter layer 13 layers applied to the sacrificial substrate 9. The scattering layer 13 contains the scattering elements 12, wherein the at least one partial layer 14 can be free of the scattering elements 12. For example, the scattering elements 12 in particular in the form of

Scattering particles on the at least one partial layer 14

applied. Subsequently, a further partial layer 14 of the high refractive index material on the at least one

Partial layer 14 and the scattering elements 12 are applied. A side facing away from the sacrificial substrate 9 side arranged

Sub-layer 14 of the coupling-out layer 1 can be formed as a planarization layer.

Alternatively, the decoupling layer 1 is multilayered

formed, wherein a scattering layer 13 with the

Diffusing elements 12 between two partial layers 14 of the

Decoupling layer 1 is formed.

According to FIG. 3B, a barrier layer 72 is applied directly to the coupling-out layer 1. In principle, however, the formation of such a barrier layer 72 may be optional. Hereinafter, a first electrode 2, a

functional layer stack 6 with a first

Charge transport layer 61, an organic active layer 63, and a second charge transport layer 62, and a second electrode 3 and an encapsulation layer 71

successively applied to the decoupling layer 1, for example by means of a coating process. Subsequently, a protective layer 70 is applied to the encapsulation layer 71. In FIG. 3C, the sacrificial substrate 9 is detached from the optoelectronic component 10. The removal of the sacrificial substrate 9 is carried out in particular on the sacrificial layer 8, whereby the detached sacrificial substrate 9 in the production of further optoelectronic components

can be reused.

According to Figure 3D, the sacrificial substrate 9 of the

optoelectronic component 10 removed. The embodiment described in FIG. 3D corresponds to FIG

Essentially that described in Figures 3A to 3C

Embodiment of the method. In contrast, no sacrificial layer 8 in the manufacture of the

optoelectronic device used. The sacrificial substrate 9 is provided in particular in the form of a film. The decoupling layer 1 is applied directly to the sacrificial substrate 9. The trained in the form of a film

Sacrificial substrate 9 is removed mechanically from the cured decoupling layer 1, for example. In particular, the sacrificial substrate 9 can be removed from the coupling-out layer 1 or peeled off.

With the use of a sacrificial substrate, a highly efficient organic component with a particularly thin, high-refractive and scattering coupling-out layer can thus be simplified and produced at low cost.

This patent application claims the priority of German Patent Application 10 2014 110 971.6, the disclosure of which is hereby incorporated by reference.

The invention is not limited by the description of the invention based on the embodiments of these. The Rather, the invention encompasses any novel feature as well as any combination of features, including in particular any combination of features in the claims, even if this feature or combination itself is not explicitly stated in the claims or exemplary embodiments.

Claims

claims

1. An optoelectronic component (10) comprising a functional layer stack (6) with an organic active layer (63) and a mechanically stable developed coupling-out layer (1), wherein

the organic active layer (63) during operation of the

Component emits electromagnetic radiation,

the functional layer stack (6) on the

Decoupling layer (1) is arranged,

the decoupling layer (1) inner scattering elements (12)

has, and

- the coupling-out layer (1) has a refractive index (nl)

which is at least 80% of a refractive index (n2) of the layer stack (6).

2. Component according to the preceding claim,

in which the refractive index (nl) of the decoupling layer (1) is greater than the refractive index (n2) of the layer stack (6), the refractive index (nl) of the decoupling layer (1) being at least 1.6.

3. Device according to one of the preceding claims, wherein the coupling-out layer (1) has a thickness (Dl) between 20 ym inclusive and including 200 ym.

4. The component according to one of the preceding claims, on a side facing away from the layer stack (6) of the decoupling layer (1) free of a carrier body of

Component is.

5. The component according to one of the preceding claims, wherein the decoupling layer (1) is formed bendable.

6. The component according to one of the preceding claims, wherein the inner scattering elements (12) are embedded in a material of the coupling-out layer (1).

7. The component according to one of the preceding claims, wherein the decoupling layer (1) is multilayered and has a scattering layer (13) with the inner scattering elements (12).

8. The component according to one of the preceding claims, wherein a barrier layer (72) between the

Decoupling layer (1) and the layer stack (6) is arranged.

9. The component according to one of the preceding claims, which has a protective layer (70) and one between the

Layer stack (6) and the protective layer (70) arranged encapsulation layer (71), wherein the layer stack (6) of the encapsulation layer (71) is completely covered.

10. A method for producing an optoelectronic

Device (10) having a decoupling layer (1) with inner scattering elements (12) and a functional layer stack (6) with an organic, during operation of the device

electromagnetic radiation emitting layer (63), comprising the following steps:

a) providing a sacrificial substrate (9);

b) applying the decoupling layer (1) on the

Sacrificial substrate (9), wherein the coupling-out layer (1) is formed mechanically stable; c) applying the functional layer stack (6) to the decoupling layer (1), wherein the decoupling layer (1) has a refractive index (nl) which is at least oo a refractive index (n2) of the layer stack (6); and

d) removing the sacrificial substrate (9) from the device

(10).

11. Method according to the preceding claim,

in which the decoupling layer (1) is applied to the sacrificial substrate (9) by means of a wet-chemical process.

12. The method according to any one of claims 10 to 11,

in which the decoupling layer (1) is formed from a material having a refractive index of at least 1.6 and

Scattering elements (12) are embedded in the material.

13. The method according to any one of claims 10 to 12,

in which for forming the decoupling layer (1) at least one partial layer (14) made of a material having a

Refractive index of at least 1.6 and a scattering layer (13) layers on the sacrificial substrate (9) are applied, wherein the scattering layer (13) has the scattering elements (12) and the at least one sub-layer (14) free of the

Scattering elements (12).

14. The method according to any one of claims 10 to 13,

in which, prior to the application of the functional layer stack (6), a sacrificial layer (8) is applied directly to the sacrificial substrate (9).

15. The method according to any one of claims 10 to 13,

in which the sacrificial substrate (9) in the form of a film

is provided and the decoupling layer (1) is applied directly to the sacrificial substrate (9).