WO2016015631A1 - 基于三连杆柱和圆环柱的大绝对禁带正方晶格光子晶体 - Google Patents
基于三连杆柱和圆环柱的大绝对禁带正方晶格光子晶体 Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
Definitions
- the invention relates to a wide absolute forbidden band two-dimensional photonic crystal.
- a photonic crystal is a material structure in which dielectric materials are periodically arranged in space, and is usually composed of two or more kinds of artificial crystals having materials having different dielectric constants.
- the frequency interval in which the electromagnetic field state density is zero is defined as the TE or TM complete band gap of the photonic crystal, and the frequency interval in which TE and TM are completely forbidden band is called photonic crystal.
- Absolute forbidden band Designing a photonic crystal with a complete forbidden band or absolute forbidden band, it can simply and effectively regulate the macroscopic electromagnetic properties of the medium, including selecting the frequency band, mode and transmission path in which the electromagnetic wave is propagated, and controlling the absorption or radiation characteristics of the medium therein. Photon motion, the basis for making various photonic devices.
- the wider the photonic band gap the better the performance of the device.
- the wider the photonic band gap the wider the operating band of the photonic crystal waveguide, the smaller the transmission loss, the photonic crystal resonator and the laser.
- the higher the quality factor the better the photonic crystal has a better restraining effect on spontaneous emission, and the higher the reflectivity of the photonic crystal mirror.
- Photonic crystals with complete forbidden band and absolute forbidden band have the most practical significance because of the existence of photonic band gaps in different directions of propagation. Therefore, photonic crystals with complete forbidden band and absolute forbidden band have been widely used. Note.
- the large absolute forbidden band can bring greater convenience and flexibility to the design and manufacture of photonic crystal devices.
- a non-square lattice structure such as a triangular lattice or a hexagonal lattice is required, but in the photonic crystal integrated optical path, a square lattice structure can be used to make the optical path simple and easy to provide an optical path. Integration, while the traditional forbidden lattice photonic crystal has a very small forbidden band width, so a square lattice photonic crystal with a large absolute forbidden band is a goal that people have been pursuing.
- the object of the present invention is to overcome the deficiencies in the prior art and to provide a novel square lattice photonic crystal structure which is easy to integrate optical paths and has a large relative forbidden band width.
- the present invention has been achieved by the following technical solutions.
- the large absolute forbidden band square lattice photonic crystal based on the three-link column and the circular column of the invention comprises a high refractive index dielectric column and a low refractive index background dielectric column; the high refractive index dielectric column is connected by a flat dielectric column The rod is connected with a circular dielectric column; the flat dielectric column is composed of a horizontal flat column, a vertical flat column and a horizontal lattice vector of the square lattice cell at an angle of 45° or an angle of 135°;
- the photonic crystal structure is formed by arranging the cells in a square lattice; the lattice constant of the square lattice photonic crystal is a; the width D of the flat dielectric column is 0.0286a, outside the circular column
- the diameter R is 0.286a, the ratio of the difference between the inner and outer diameters of the annular column and the outer diameter of the ring is 0.99, and the relative value of the maximum absolute forbidden band is 10.401486%;
- the high refractive index medium is silicon, gallium arsenide, titanium dioxide or a high refractive index medium having a refractive index greater than 2.
- the high refractive index medium is silicon and has a refractive index of 3.4.
- the background medium is a low refractive index medium, which is air, magnesium fluoride, silicon dioxide or a low refractive index medium;
- the low refractive index medium is air.
- the distance from the leftmost end of the left flat plate connecting rod of the horizontal flat column to the rightmost end of the right flat connecting rod is a.
- the distance from the bottommost end of the lower plate connecting rod of the vertical flat column connecting rod to the top end of the upper flat connecting rod is a.
- the width of the flat dielectric column is 0.01a ⁇ D ⁇ 0.048a
- the outer diameter of the circular column is 0.22a ⁇ R ⁇ 0.34a
- the ratio of the difference between the inner and outer diameters of the circular column and the outer diameter of the annular ring 0.34 ⁇ T ⁇ 0.99
- the high refractive index medium is silicon
- the low refractive index medium is air
- the absolute forbidden band relative value of the photonic crystal structure is greater than 5%.
- the width of the flat dielectric column is 0.0195a ⁇ D ⁇ 0.029a
- the outer diameter of the circular column is 0.26a ⁇ R ⁇ 0.34a
- the ratio of the difference between the inner and outer diameters of the circular column and the outer diameter of the annular ring 0.765 ⁇ T ⁇ 0.99
- the high refractive index medium is silicon
- the low refractive index medium is air
- the absolute forbidden band relative value of the photonic crystal structure is greater than 7%.
- the photonic crystal structure of the present invention can be widely applied to large-scale integrated optical path design. Compared with the prior art, it has the following positive effects.
- the photonic crystal structure of the present invention has a very large absolute forbidden band, which provides more space for the application of photonic crystals, and also brings greater convenience and flexibility to the design and manufacture of photonic crystal devices.
- the photonic crystal of the invention belongs to a square lattice, has a simple optical path, is convenient for design, and is easy to integrate large-scale optical paths;
- the photonic crystal of the present invention belongs to a square lattice, and connection and coupling are easily realized between different optical elements in the optical path and between different optical paths, which is advantageous in reducing cost.
- 1 is a schematic view showing the structure of a square lattice two-dimensional photonic crystal in which the flat-plate link of the present invention and the horizontal lattice vector of the square lattice cell are at an angle of 45[deg.].
- FIG. 2 is a schematic view showing the structure of a square lattice two-dimensional photonic crystal having a flat link and a horizontal lattice vector of a square lattice cell of the present invention.
- Figure 3 is a graph showing the effect of the width of the flat dielectric column on the relative value of the absolute forbidden band.
- FIG. 4 is a diagram showing the relative value of the photonic crystal structure of the present invention corresponding to the maximum absolute forbidden band width.
- Fig. 5 is a structural diagram showing the relationship of the maximum absolute forbidden band relative value of the photonic crystal shown in Fig. 1.
- the photonic crystal structure of the present invention comprises a high refractive index dielectric column and a low refractive index background dielectric column, and the entire photonic crystal structure is formed by a cell in a square lattice.
- the cells are arranged in a square lattice to form the photonic crystal, the dotted line in the figure represents the boundary of the cell;
- the lattice constant of the square lattice photonic crystal is a;
- the plate dielectric column The width D is 0.0286a, the outer diameter R of the annular column is 0.286a, the ratio of the difference between the inner and outer diameters of the annular column and the outer diameter of the ring is 0.99, and the relative value of the maximum absolute forbidden band is 10.401486.
- the width of the flat dielectric column is 0.01a ⁇ D ⁇ 0.048a, the outer diameter of the circular column is 0.22a ⁇ R ⁇ 0.34a, the difference between the inner and outer diameters of the annular column and the outer diameter of the ring
- the ratio of the ratio is 0.34 ⁇ T ⁇ 0.99, the high refractive index medium is silicon, the low refractive index medium is air, the absolute forbidden band relative value of the photonic crystal structure is greater than 5%
- the width of the flat dielectric column is 0.0195a ⁇ D ⁇ 0.029a, the outer diameter of the circular column is 0.26a ⁇ R ⁇ 0.34a, the ratio of the difference between the inner and outer diameters of the annular column and the outer diameter of the annular ring is 0.765 ⁇ T ⁇ 0.99, and the high refractive index medium is Silicon, the low refractive index medium is air, and the absolute forbidden band relative value of the photonic crystal structure is greater than 7%.
- the high refractive index dielectric column is divided into two parts: a circular column and a flat dielectric column connecting the rings, and the high refractive index dielectric column is composed of a flat dielectric column and three links connecting the annular dielectric columns, the high refractive index.
- the medium comprises silicon (Si), gallium arsenide, titanium dioxide, etc.; the background medium is a low refractive index medium, including air, magnesium fluoride, silicon dioxide, etc.;
- the flat dielectric column is a horizontal flat column, a vertical flat column and
- the horizontal lattice vector of the square lattice cell is formed by an oblique flat column with an angle of 45° or 135°; the distance from the leftmost end of the left flat connecting rod of the horizontal flat column to the rightmost end of the right flat connecting rod is a a distance from a bottom end of the lower plate connecting rod of the vertical flat column connecting rod to a top end of the upper flat connecting rod is a; a leftmost to right flat plate of the left flat connecting rod of the oblique flat connecting rod The distance from the far right end of the connecting rod is The distance from the bottom end of the lower plate connecting rod of the cell to the top end of the upper plate connecting rod is
- the ratio of the absolute forbidden band width to the forbidden band center frequency is taken as the index of the forbidden band width, which is called the relative forbidden band width relative value.
- the high refractive index material is silicon
- the low refractive index medium is air
- the fixed T is 0.9
- the R is 0.3a.
- the D is scanned based on the plane wave expansion method, and the result shown in FIG. 3 is obtained.
- the high refractive index material is silicon
- the low refractive index medium is air
- the fixed D is 0.0328a
- the T is 0.9.
- the R value is 0.3a.
- the high refractive index material is silicon
- the low refractive index medium is air
- the fixed R is 0.3a
- D is 0.0328a
- the corresponding T value is 0.99.
- the high refractive index material is silicon
- the low refractive index medium is air
- D 0.0286a
- R 0.286a
- T 0.99
- the relative absolute maximum band gap value is 10.401486%.
- the energy band diagram is shown in Figure 4.
- the photonic crystal structure under the final structural parameters is shown in Figure 5.
- the dotted line in the figure indicates the boundary of the cell.
- High refractive index medium is silicon
- low refractive index medium is air
- a 0.325
- ring column The inner diameter is 0.00093 micron
- the absolute forbidden band range of the obtained photonic crystal is (0.769449 ⁇ 0.693378)
- the relative value of the absolute forbidden band corresponds to 10.401486%.
- High refractive index medium is silicon
- low refractive index medium is air
- a 0.45
- ring column The inner diameter is 0.001287 microns
- the absolute forbidden band range of the obtained photonic crystal is (1.65391 ⁇ 0.960061)
- the absolute forbidden band corresponds to 10.401486%.
- High refractive index medium is silicon
- low refractive index medium is air
- a 0.65
- ring column The inner diameter is 0.001859 micron
- the absolute forbidden band range of the obtained photonic crystal is (1.538899 ⁇ 1.386755)
- the relative value of the absolute forbidden band corresponds to 10.401486%.
- High refractive index medium is silicon
- low refractive index medium is air
- a 0.475
- ring column The inner diameter is 0.042646 microns
- the absolute forbidden band range of the obtained photonic crystal is (0.937383 ⁇ 0.882719)
- the relative value of the absolute forbidden band corresponds to 6.00848%.
- High refractive index medium is silicon
- low refractive index medium is air
- a 0.5
- ring column The inner diameter is 0.01005 micron
- the absolute forbidden band range of the obtained photonic crystal is (1.128999 ⁇ 1.05241)
- the relative value of the absolute forbidden band corresponds to 7.02191%.
- High refractive index medium is silicon
- low refractive index medium is air
- a 0.685
- ring column The inner diameter is 0.030304 microns
- the absolute forbidden band range of the obtained photonic crystal is (1.660244 ⁇ 1.532438)
- the relative value of the absolute forbidden band corresponds to 8.057%.
- High refractive index medium is silicon
- low refractive index medium is air
- a 0.75
- ring column The inner diameter is 0.0294 micron
- the absolute forbidden band range of the obtained photonic crystal is (1.74817 ⁇ 1.597138)
- the relative value of the absolute forbidden band corresponds to 9.03088%.
- High refractive index medium is silicon
- low refractive index medium is air
- a 0.7
- ring column The inner diameter is 0.002058 micrometers
- the absolute forbidden band range of the obtained photonic crystal is (1.671442 to 1.512075)
- the relative value of the absolute forbidden band corresponds to 10.01218%.
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Abstract
一种基于三连杆柱和圆环柱的大绝对禁带正方晶格光子晶体，包括高折射率介质柱和低折射率背景介质柱，高折射率介质柱由平板介质柱三连杆连接圆环介质柱组成；平板介质柱由水平方向平板柱、垂直方向平板柱及正方晶格元胞的水平格矢量成45°角或135°角的斜向平板柱构成；光子晶体结构由元胞按正方晶格排列而成；正方晶格光子晶体的晶格常数为a，平板介质柱的宽度（D）为0.0286a，圆环柱的外径（R）为0.286a，圆环柱的内外径之差与圆环外径（R）的比值（T）为0.99，对应最大绝对禁带的相对值为10.401486％。光子晶体结构具有非常大的绝对禁带，可广泛应用于大规模集成光路设计中。
Description
本发明涉及宽绝对禁带二维光子晶体。
1987年，美国Bell实验室的E.Yablonovitch在讨论如何抑制自发辐射和Princeton大学的S.John在讨论光子区域各自独立地提出了光子晶体(Photonic Crystal)的概念。光子晶体是一种介电材料在空间中呈周期性排列的物质结构，通常由两种或两种以上具有不同介电常数材料构成的人工晶体。
在频域，对任意方向传播的TE或TM波，电磁场态密度为零的频率区间定义为光子晶体的TE或TM完全禁带，同时为TE和TM完全禁带的频率区间被称为光子晶体的绝对禁带。设计具有完全禁带或绝对禁带的光子晶体，能够简单而有效地调控介质的宏观电磁特性，包括选择其中传播电磁波的频带、模式和传输路径，控制其中介质的吸收或辐射等特性，是控制光子运动、制作各种光子器件的基础。
对于各种光子晶体器件而言，光子禁带越宽，器件的性能越好，例如，光子禁带越宽，则光子晶体波导的工作频带越宽、传输损耗越小，光子晶体谐振腔和激光器的品质因子越高，光子晶体对自发辐射的约束效果越好，光子晶体反射镜的反射率越高等。具有完全禁带和绝对禁带的光子晶体因对不同传播方向上的光都存在光子带隙而最有实用意义，因此具有完全禁带和绝对禁带的光子晶体受到了广泛关
注。大的绝对禁带可以为光子晶体器件的设计和制造带来更大的方便和灵活性。
传统上，要获得大的相对禁带，需要采用三角晶格、六角晶格等非正方晶格结构，但是在光子晶体集成光路中，采用正方晶格结构可以使光路简洁，并易于提供光路的集成度，而传统的正方晶格光子晶体的绝对禁带宽度很小，因此具有大的绝对禁带的正方晶格光子晶体成是人们一直追求的目标。
发明内容
本发明的目的是克服现有技术中的不足之处，提供一种易于光路集成,大绝对禁带宽度相对值的新型正方晶格光子晶体结构。
为实现以上目的，本发明是通过以下技术方案予以实现。
本发明的基于三连杆柱和圆环柱的大绝对禁带正方晶格光子晶体包括高折射率介质柱和低折射率背景介质柱；所述的高折射率介质柱由平板介质柱三连杆连接圆环介质柱组成；所述的平板介质柱由水平方向平板柱、垂直方向平板柱及正方晶格元胞的水平格矢量成45°角或135°角的斜向平板柱构成；所述的光子晶体结构由所述元胞按正方晶格排列而成；所述正方晶格光子晶体的晶格常数为a；所述平板介质柱的宽度D为0.0286a，所述圆环柱外径R为0.286a，所述圆环柱的内外径之差与圆环外径的比值T为0.99，对应最大绝对禁带的相对值为10.401486％；
所述高折射率介质为硅、砷化镓、二氧化钛或折射率大于2的高折射率介质。
所述高折射率介质为硅，其折射率为3.4。
所述背景介质为低折射率介质，该低折射率介质为空气、氟化镁、二氧化硅或低折射率介质；
所述低折射率介质为空气。
所述的水平方向平板柱左平板连接杆的最左端到右平板连接杆的最右端的距离为a。
所述垂直方向平板柱连接杆的下平板连接杆的最底端到上平板连接杆的最顶端的距离为a。
所述的斜向平板连杆的左平板连接杆的最左端到右平板连接杆的最右端的距离为
所述元胞的下平板连接杆的最底端到上平板连接杆的最顶端的距离为
所述平板介质柱的宽度为0.01a≤D≤0.048a，所述圆环柱的外径为0.22a≤R≤0.34a，所述圆环柱的内外径之差与圆环外径的比值为0.34≤T≤0.99，高折射率介质为硅，低折射率介质为空气，所述光子晶体结构的绝对禁带相对值大于5％。
所述平板介质柱的宽度为0.0195a≤D≤0.029a，所述圆环柱的外径为0.26a≤R≤0.34a，所述圆环柱的内外径之差与圆环外径的比值为0.765≤T≤0.99，高折射率介质为硅，低折射率介质为空气，所述光子晶体结构的绝对禁带相对值大于7％。
本发明的光子晶体结构可广泛应用于大规模集成光路设计中。它与现有技术相比，有如下积极效果。
1.本发明的光子晶体结构具有非常大的绝对禁带，为光子晶体的应用提供了更大的空间，同时也为光子晶体器件的设计和制造带来更大的方便和灵活性。
2.本发明的光子晶体属于正方晶格，光路简洁，便于设计，易于大规模光路集成；
3.本发明的光子晶体属于正方晶格，光路中不同光学元件之间以及不同光路之间易于实现连接和耦合，有利于降低成本。
图1为本发明的平板连杆与正方晶格元胞的水平格矢量成45°角的正方晶格二维光子晶体的结构示意图。
图2为本发明的平板连杆与正方晶格元胞的水平格矢量成135°角的正方晶格二维光子晶体的结构示意图。
图3为本发明平板介质柱的宽度对于绝对禁带相对值的影响图。
图4为本发明的光子晶体结构对应于最大绝对禁带宽度相对值能带图。
图5为图1所示的光子晶体最大绝对禁带相对值的参数结构图。
下面结合附图和具体实施方式对本发明作进一步详细的阐述。本发明的光子晶体结构包括高折射率介质柱和低折射率背景介质柱，整个光子晶体结构是由元胞按正方晶格生成的。参照图1、2所示为
光子晶体的一个元胞，该元胞按正方晶格排列构成所述的光子晶体，图中虚线表示元胞的边界；所述正方晶格光子晶体的晶格常数为a；所述平板介质柱的宽度D为0.0286a，所述圆环柱外径R为0.286a，所述圆环柱的内外径之差与圆环外径的比值T为0.99，对应最大绝对禁带的相对值为10.401486％；所述平板介质柱的宽度为0.01a≤D≤0.048a，所述圆环柱的外径为0.22a≤R≤0.34a，所述圆环柱的内外径之差与圆环外径的比值为0.34≤T≤0.99，高折射率介质为硅，低折射率介质为空气，所述光子晶体结构的绝对禁带相对值大于5％；所述平板介质柱的宽度为0.0195a≤D≤0.029a，所述圆环柱的外径为0.26a≤R≤0.34a，所述圆环柱的内外径之差与圆环外径的比值为0.765≤T≤0.99，高折射率介质为硅，低折射率介质为空气，所述光子晶体结构的绝对禁带相对值大于7％。
所述高折射率介质柱分为两个部分：圆环柱和连接圆环的平板介质柱，高折射率介质柱由平板介质柱三连杆连接圆环介质柱组成，所述的高折射率介质包括硅(Si)，砷化镓、二氧化钛等；背景介质为低折射率介质，包括空气、氟化镁、二氧化硅等；所述平板介质柱由水平方向平板柱、垂直方向平板柱及正方晶格元胞的水平格矢量成45°角或135°角的斜向平板柱构成；所述的水平方向平板柱左平板连接杆的最左端到右平板连接杆的最右端的距离为a；所述垂直方向平板柱连接杆的下平板连接杆的最底端到上平板连接杆的最顶端的距离为a；所述的斜向平板连杆的左平板连接杆的最左端到右平板连
接杆的最右端的距离为
所述元胞的下平板连接杆的最底端到上平板连接杆的最顶端的距离为
通常将绝对禁带宽度与禁带中心频率的比值作为禁带宽度的考察指标，称之为绝对禁带宽度相对值。
利用平面波展开法进行大量的精细研究得到，最大的绝对禁带相对值和其对应的参数。
通过最速下降法对所述光子晶体结构进行优化搜索研究，能获得最大绝对禁带相对值，具体方法如下：
(1)确定三个参数的初扫描范围为：平板介质柱的宽度D＝(0.01a～0.2a)，圆环柱的外径R＝(0.1a～0.5a)，圆环柱的内外径之差与圆环外径的比值T＝(0.01～0.99)。
(2)基于平面波展开法做粗扫描，得到比较好的参数T为0.9，R为0.3a。
(3)高折射率材料采用硅，低折射率介质为空气，固定T为0.9，R为0.3a，基于平面波展开法对D进行扫描，得到图3所示的结果。图3中，D的值在0.01～0.048的范围内都有完全禁带，且在D等于0.0328a处有最大绝对禁带相对值，为gapratio1＝9.55243％。
(4)高折射率材料采用硅，低折射率介质为空气，固定D为0.0328a，T为0.9，基于平面波展开法对R进行扫描，得到最佳绝对禁带相对值gapratio2＝9.55243％，对应的R值为0.3a。
(5)高折射率材料采用硅，低折射率介质为空气，固定R为0.3a，D为0.0328a，基于平面波展开法对T进行扫描，得到最佳绝对禁带相对值gapratio2＝9.78866％，对应的T值为0.99。
(6)判断|(gapratio2-gapratio1)/(gapratio2+gapratio1)|是否小于1％，若否，则以前述各步的结果，对各参数进行新一轮扫描，直到|(gapratio2-gapratio1)/(gapratio2+gapratio1)|<1％才结束搜索，最终获得最优化的绝对禁带相对值及其所对应的结构参数。
最终得到的优化结果为：高折射率材料采用硅，低折射率介质为空气，D＝0.0286a，R＝0.286a，T＝0.99时，最大绝对禁带的相对值＝10.401486％。其能带图如图4所示，最终结构参数下的光子晶体结构如图5所示，图中虚线表示元胞的边界。
根据以上结果给出如下9个实施例：
实施例1.高折射率介质采用硅，低折射率介质为空气，a＝0.325,平板介质柱宽度D＝0.0286a＝0.009295微米，圆环柱外径R＝0.286a＝0.09295微米，圆环柱内径为0.00093微米，所得到光子晶体的绝对禁带范围为(0.769449～0.693378)，绝对禁带的相对值对应为10.401486％.
实施例2.高折射率介质采用硅，低折射率介质为空气，a＝0.45,平板介质柱宽度D＝0.0286a＝0.1287微米，圆环柱外径R＝0.286a＝0.1287微米，圆环柱内径为0.001287微米，所得到光子晶体的绝对禁带范围为(1.65391～0.960061)，绝对禁带相对值对应为10.401486％.
实施例3.高折射率介质采用硅，低折射率介质为空气，a＝0.65,平板介质柱宽度D＝0.0286a＝0.01859微米，圆环柱外径R＝0.286a＝0.1859微米，圆环柱内径为0.001859微米，所得到光子晶体的绝对禁带范围为(1.538899～1.386755)，绝对禁带的相对值对应为10.401486％。
实施例4.高折射率介质采用硅，低折射率介质为空气，a＝0.35,平板介质柱宽度D＝0.0385a＝0.013475微米，圆环柱外径R＝0.28a＝0.098微米，圆环柱内径为0.01372微米，所得到光子晶体的绝对禁带范围为(0.816784～0.776897)，绝对禁带的相对值对应为5.00664％。
实施例5.高折射率介质采用硅，低折射率介质为空气，a＝0.475,平板介质柱宽度D＝0.01a＝0.00475微米，圆环柱外径R＝0.268a＝0.1273微米，圆环柱内径为0.042646微米，所得到光子晶体的绝对禁带范围为(0.937383～0.882719)，绝对禁带的相对值对应为6.00848％。
实施例6.高折射率介质采用硅，低折射率介质为空气，a＝0.5,平板介质柱宽度D＝0.029a＝0.0145微米，圆环柱外径R＝0.268a＝0.134微米，圆环柱内径为0.01005微米，所得到光子晶体的绝对禁带范围为(1.128999～1.05241)，绝对禁带的相对值对应为7.02191％。
实施例7.高折射率介质采用硅，低折射率介质为空气，a＝0.685,平板介质柱宽度D＝0.029a＝0.019865微米，圆环柱外径R＝0.316a＝0.21646微米，圆环柱内径为0.030304微米，所得到光子晶体的绝对禁带范围为(1.660244～1.532438)，绝对禁带的相对值对应为8.0057％。
实施例8.高折射率介质采用硅，低折射率介质为空气，a＝0.75,平板介质柱宽度D＝0.029a＝0.02175微米，圆环柱外径R＝0.28a＝0.21微米，圆环柱内径为0.0294微米，所得到光子晶体的绝对禁带范围为(1.74817～1.597138)，绝对禁带的相对值对应为9.03088％。
实施例9.高折射率介质采用硅，低折射率介质为空气，a＝0.7,平板介质柱宽度D＝0.0286a＝0.02002微米，圆环柱外径R＝0.294a＝0.2058微米，圆环柱内径为0.002058微米，所得到光子晶体的绝对禁带范围为(1.671442～1.512075)，绝对禁带的相对值对应为10.01218％。
以上所述本发明在具体实施方式及应用范围均有改进之处，不应当理解为对本发明限制。
Claims (11)
- 一种基于三连杆柱和圆环柱的大绝对禁带正方晶格光子晶体，其特征在于，它包括高折射率介质柱和低折射率背景介质柱，所述的高折射率介质柱由平板介质柱三连杆连接圆环介质柱组成；所述的平板介质柱由水平方向平板柱、垂直方向平板柱及正方晶格元胞的水平格矢量成45°角或135°角的斜向平板柱构成；所述的光子晶体结构由所述元胞按正方晶格排列而成；所述正方晶格光子晶体的晶格常数为a；所述平板介质柱的宽度D为0.0286a，所述圆环柱的外径R为0.286a，所述圆环柱的内外径之差与圆环外径的比值T为0.99，对应最大绝对禁带的相对值为10.401486％。
- 按照权利要求1所述的基于三连杆柱和圆环柱的大绝对禁带正方晶格光子晶体，其特征在于，所述高折射率介质为硅、砷化镓、二氧化钛或折射率大于2的高折射率介质。
- 按照权利要求2所述的基于三连杆柱和圆环柱的大绝对禁带正方晶格光子晶体，其特征在于，所述高折射率介质为硅，其折射率为3.4。
- 按照权利要求1所述的基于三连杆柱和圆环柱的大绝对禁带正方晶格光子晶体，其特征在于，所述背景介质为低折射率介质，该低折射率介质为空气、氟化镁、二氧化硅或低折射率介质。
- 按照权利要求4所述的基于三连杆柱和圆环柱的大绝对禁带正方晶格光子晶体，其特征在于，所述低折射率介质为空气。
- 按照权利要求1所述的基于三连杆柱和圆环柱的大绝对禁带 正方晶格光子晶体，其特征在于，所述的水平方向平板柱左平板连接杆的最左端到右平板连接杆的最右端的距离为a。
- 按照权利要求1所述的基于三连杆柱和圆环柱的大绝对禁带正方晶格光子晶体，其特征在于，所述垂直方向平板柱连接杆的下平板连接杆的最底端到上平板连接杆的最顶端的距离为a。
- 按照权利要求1所述的基于三连杆柱和圆环柱的大绝对禁带正方晶格光子晶体，其特征在于，所述的斜向平板连杆的左平板连接杆的最左端到右平板连接杆的最右端的距离为
- 按照权利要求1所述的基于三连杆柱和圆环柱的大绝对禁带正方晶格光子晶体，其特征在于，所述元胞的下平板连接杆的最底端到上平板连接杆的最顶端的距离为
- 所述平板介质柱的宽度为0.01a≤D≤0.048a，所述圆环柱的外径为0.22a≤R≤0.34a，所述圆环柱的内外径之差与圆环外径的比值为0.34≤T≤0.99，高折射率介质为硅，低折射率介质为空气，所述光子晶体结构的绝对禁带相对值大于5％。
- 所述平板介质柱的宽度为0.0195a≤D≤0.029a，所述圆环柱的外径为0.26a≤R≤0.34a，所述圆环柱的内外径之差与圆环外径的比值为0.765≤T≤0.99，高折射率介质为硅，低折射率介质为空气，所述光子晶体结构的绝对禁带相对值大于7％。
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| US20130028553A1 (en) * | 2011-07-27 | 2013-01-31 | Massachusetts Institute Of Technology | 2-pattern compound photonic crystals with a large, complete photonic band gap |
| CN103176272A (zh) * | 2011-12-21 | 2013-06-26 | 北京邮电大学 | 二维光子晶体最大绝对带隙结构优化方法 |
| CN103901536A (zh) * | 2014-04-11 | 2014-07-02 | 深圳大学 | 一种圆环杆与平板连杆的二维正方晶格光子晶体 |
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| US20130028553A1 (en) * | 2011-07-27 | 2013-01-31 | Massachusetts Institute Of Technology | 2-pattern compound photonic crystals with a large, complete photonic band gap |
| CN103176272A (zh) * | 2011-12-21 | 2013-06-26 | 北京邮电大学 | 二维光子晶体最大绝对带隙结构优化方法 |
| CN103901536A (zh) * | 2014-04-11 | 2014-07-02 | 深圳大学 | 一种圆环杆与平板连杆的二维正方晶格光子晶体 |
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