WO2016007253A1 - Design of susceptor in chemical vapor deposition reactor - Google Patents

Design of susceptor in chemical vapor deposition reactor Download PDF

Info

Publication number
WO2016007253A1
WO2016007253A1 PCT/US2015/035243 US2015035243W WO2016007253A1 WO 2016007253 A1 WO2016007253 A1 WO 2016007253A1 US 2015035243 W US2015035243 W US 2015035243W WO 2016007253 A1 WO2016007253 A1 WO 2016007253A1
Authority
WO
WIPO (PCT)
Prior art keywords
susceptor
substrate support
substrate
support ring
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2015/035243
Other languages
French (fr)
Inventor
Yi-Chiau Huang
Zuoming Zhu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN201580032737.4A priority Critical patent/CN106463453A/en
Priority to SG11201610304SA priority patent/SG11201610304SA/en
Priority to KR1020177003410A priority patent/KR20170030581A/en
Publication of WO2016007253A1 publication Critical patent/WO2016007253A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds

Definitions

  • Embodiments described herein generally relate to semiconductor manufacturing, and more specifically, to an apparatus for depositing a material on a substrate.
  • Integrated circuits are typically formed on substrates, particularly silicon wafers, by the sequential deposition of conductive, semiconducting or insulating layers. Continuous reduction in size of semiconductor devices is dependent upon more precise control of, for instance, the temperature of the substrate during the deposition process.
  • the substrate is disposed on a heated susceptor during the deposition process.
  • the substrate may be bowed because of a coating with a material having a very different coefficient of thermal expansion (CTE), or because of an inherent tensile stress.
  • CTE coefficient of thermal expansion
  • the bowed substrate typically having a concave shape, is heated unevenly because a portion of the substrate is in contact with the heated susceptor while the remaining portion is not in contact with the heated susceptor.
  • Embodiments described herein generally relate to an apparatus for depositing materials on a substrate.
  • the apparatus includes a susceptor and a substrate support ring disposed on the susceptor.
  • the substrate support ring has a first surface for receiving the substrate and a second surface opposite the first surface.
  • the second surface includes at least three protrusions and each protrusion has a tip that is in contact with the susceptor.
  • an apparatus in one embodiment, includes a susceptor and a substrate support ring disposed on a surface of the susceptor.
  • the substrate support ring includes a first surface for receiving a substrate and a second surface opposite the first surface.
  • the second surface includes at least three protrusions, each protrusion has a tip, and each tip is in contact with the susceptor.
  • an apparatus in another embodiment, includes a chamber body and a substrate support assembly disposed in the chamber body.
  • the substrate support assembly includes a susceptor and a substrate support ring disposed on a surface of the susceptor.
  • the substrate support ring includes a first surface for receiving a substrate, and a second surface opposite the first surface.
  • the second surface includes at least three protrusions, each protrusion has a tip, and each tip is in contact with the susceptor.
  • an apparatus in another embodiment, includes a susceptor having a surface, and at least three recesses are formed in the surface of the susceptor.
  • the substrate support assembly further includes a substrate support ring disposed on the surface of the susceptor.
  • the substrate support ring includes a first surface for receiving a substrate and a second surface opposite the first surface.
  • the second surface includes at least three protrusions, each protrusion has a tip, and each tip is placed in a corresponding recess of the at least three recesses.
  • Figure 1 is a cross sectional view of an apparatus for depositing materials on a substrate according to one embodiment described herein.
  • Figures 2A - 2C illustrate a substrate support assembly according to embodiments described herein.
  • Figures 3A - 3B illustrate a substrate support assembly according to embodiments described herein.
  • Embodiments described herein generally relate to an apparatus for depositing materials on a substrate.
  • the apparatus includes a substrate support assembly.
  • the substrate support assembly includes a susceptor and a substrate support ring disposed on the susceptor.
  • the substrate support ring has a first surface for receiving the substrate and a second surface opposite the first surface.
  • the second surface includes at least three protrusions and each protrusion has a tip that is in contact with the susceptor.
  • Figure 1 is a cross sectional view of an apparatus 100 for depositing materials on a substrate 108 according to one embodiment.
  • the apparatus 100 may be a thermal CVD chamber with an array of heating lamps 102 disposed below the substrate 108, as shown in Figure 1 .
  • the apparatus 100 is not limited to the configuration shown in Figure 1 .
  • the substrate 108 may be heated by heating elements embedded in a susceptor supporting the substrate, and processing gases may be introduced through a showerhead disposed above the substrate 108.
  • the array of radiant heating lamps may be disposed over the substrate 108.
  • the apparatus 100 includes a chamber body 101 , an upper dome 128 and a lower dome 1 14 disposed in the chamber body 101 , and a base ring 136 disposed between the upper dome 128 and the lower dome 1 14.
  • the upper dome 128 and the lower dome 1 14 are formed from an optically transparent material such as quartz.
  • a substrate support assembly 104 is disposed in the chamber body 101 between the upper dome 128 and the lower dome 1 14.
  • the substrate 108 (not to scale) can be brought into the apparatus 100 and positioned onto the substrate support assembly 104 through a loading port (not shown).
  • the substrate support assembly 104 includes a susceptor 103 and a substrate support ring 107 disposed on the susceptor 103.
  • the substrate support assembly 104 may be supported by a shaft 132.
  • the substrate 108 may be disposed on the substrate support ring 107.
  • the substrate support assembly 104 is shown in an elevated processing position, but may be vertically traversed by an actuator (not shown) to a loading position below the processing position to allow lift pins 105 to contact the lower dome 1 14, passing through holes in the susceptor 103, and raise the substrate 108 from the substrate support ring 107.
  • the lift pins 105 do not contact the lower dome 1 14. Instead, the lift pins 105 may contact a support (not shown) disposed over the lower dome 1 14. A robot (not shown) may then enter the apparatus 100 to engage and remove the substrate 108 therefrom through the loading port.
  • the substrate support assembly 104 while located in the processing position, divides the internal volume of the chamber body 101 into a processing region 156 that is above the substrate 108, and a purging region 158 below the susceptor 103.
  • the susceptor 103 and the substrate support ring 107 may be rotated during operation by the shaft 132 to minimize the effect of thermal and processing gas flow spatial anomalies within the chamber body 101 and thus facilitate uniform processing of the substrate 108.
  • the substrate support assembly 104 is described in detail below.
  • One or more heating lamps may be disposed adjacent to and beneath the lower dome 1 14 in a specified manner around the central shaft 132 to independently control the temperature at various regions of the substrate 108 as the process gas passes over the substrate 108, thereby facilitating the deposition of a material onto the upper surface of the substrate 108.
  • An annular shield 167 may be optionally disposed around the substrate support assembly 104.
  • the annular shield 167 may be coupled to a liner assembly 163 that is coupled to the base ring 136.
  • the shield 167 prevents or minimizes leakage of heat/light noise from the lamps 102 to an upper surface 1 16 of the substrate 108 while providing a pre-heat zone for the process gases.
  • the shield 167 may be made from SiC, sintered graphite coated with SiC, grown SiC, opaque quartz, coated quartz, or any similar, suitable material that is resistant to chemical breakdown by process and purging gases.
  • the annular shield 167 may be a preheat ring that is utilized to heat the process gases flowing from a process gas inlet 174 before the process gases reach the substrate 108.
  • a reflector 122 may be optionally placed over the upper dome 128 to reflect infrared light that is radiating off the substrate 108 back onto the substrate 108.
  • the reflector 122 may be secured to the upper dome 128 using a clamp ring 130.
  • the reflector 122 can be made of a metal such as aluminum or stainless steel. The efficiency of the reflection can be improved by coating a reflector area with a highly reflective coating such as with gold.
  • the reflector 122 can have one or more machined channels 126 connected to a cooling source (not shown).
  • An optical pyrometer 1 18 may be disposed on the reflector 122 for temperature measurement/control.
  • Process gases supplied from a process gas supply source 172 may be introduced into the processing region 156 through the process gas inlet 174 formed in the base ring 136.
  • the process gas inlet 174 directs the process gases in a generally radially inward direction.
  • the substrate support assembly 104 may be in the processing position, which is adjacent to and at about the same elevation as the process gas inlet 174, allowing the process gases to flow along a flow path 173 across the upper surface 1 16 of the substrate 108 in a laminar flow fashion.
  • the process gases exit the processing region 156 (along a flow path 175) through a gas outlet 178 located on the side of the apparatus 100 opposite the process gas inlet 174. Removal of the process gases through the gas outlet 178 may be facilitated by a vacuum pump 180 coupled thereto.
  • a purge gas may be supplied from a purge gas source 162 to the purging region 158 through an optional purge gas inlet 164 (or through the process gas inlet 174) formed in the base ring 136.
  • the purge gas inlet 164 is disposed below the process gas inlet 174.
  • the purge gas inlet 164 directs the purge gas in a generally radially inward direction.
  • the substrate support assembly 104 may be located at a position such that the purge gas flows along flow path 165 across a back side 1 1 1 of the susceptor 103 in a laminar flow fashion.
  • the purge gas exits the purging region 158 (along flow path 166) and is exhausted out of the process chamber through the gas outlet 178.
  • FIG. 2A - 2C illustrate a substrate support assembly according to embodiments described herein.
  • Figure 2A is an exploded view of the substrate support assembly 104 according to embodiments described herein.
  • the substrate support assembly 104 includes the substrate support ring 107 and the susceptor 103.
  • the substrate support ring 107 includes a first surface 201 and a second surface 203 opposite the first surface 201 .
  • the substrate 108 is disposed on the first surface 201 of the substrate support ring 107 during operation, and more particularly, the edge of the substrate 108 is in contact with the substrate support ring 107.
  • the second surface 203 includes at least three protrusions 202 and each protrusion 202 has a tip 204.
  • the tip 204 may be disposed on the susceptor 103.
  • the susceptor 103 may be made of silicon carbide or graphite coated silicon carbide, so the susceptor 103 may absorb radiant energy from the lamps 102 disposed below and heat the substrate 108.
  • the tip 204 may be pointed so the contact area between the substrate support ring 107 and the susceptor 103 may be very small.
  • the substrate support ring 107 may be made of a material that has poor thermal conductivity, such as quartz. Thus, the unwanted edge heating of the substrate 108 is minimized due to the small contact area between the substrate support ring 107 and the heated susceptor 103.
  • a curved surface 206 such as an arc, may be formed between adjacent tips 204.
  • the curved surface 206 does not have any stress concentrating areas since the curved surface 206 does not contain any sharp angles.
  • Such design helps maintain the structure integrity of the substrate support ring 107 at elevated temperatures.
  • the maximum number protrusions 202 may depend on the degree of curvature of the curved surfaces 206. Too many protrusions 202 may result in sharp angled surfaces between protrusions. In one embodiment, there are at least three protrusions. Because the edge of the substrate 108 makes continuous contact with the first surface 201 of the substrate support ring 107, which prevents process gases from flowing across the back side of the substrate 108, backside deposition on the substrate 108 is minimized.
  • the susceptor 103 includes a top surface 207 facing the substrate support ring 107.
  • the top surface 207 may include an outer portion 208 and an inner portion 210.
  • the substrate support ring 107 may be disposed on the outer portion 208.
  • At least three recesses 212, such as holes or grooves, may be formed in the outer portion 208 to control the position of the substrate support ring 107 relative to the susceptor 103.
  • each tip 204 may be placed in a corresponding recess 212 disposed in the outer portion 208 of the susceptor 103.
  • FIG. 2B is a cross sectional side view of the substrate support assembly 104 supporting the substrate 108 according to one embodiment described herein.
  • the susceptor 103 has a curved inner portion 210.
  • the curved inner portion 210 ensures that substrate 108 is not touching the heated susceptor 103.
  • the height "H1 " of the substrate support ring 107 may be relatively small, such as between about 3 mm and about 10 mm.
  • FIG. 2C is a cross sectional side view of the substrate support assembly 104 supporting the substrate 108 according to another embodiment described herein.
  • the susceptor 103 has a flat inner portion 210.
  • the height "H2" of the substrate support ring 107 may be greater than the height ⁇ 1 ", and the height "H2" may be between about 4 mm and about 10 mm, in order to prevent the bowed substrate 108 from contacting the heated susceptor 103.
  • Figures 3A - 3B illustrate the substrate support assembly 104 according to embodiments described herein.
  • Figure 3A is an exploded view of the substrate support assembly 104 according to embodiments described herein.
  • the substrate support assembly 104 includes the substrate support ring 107 and a susceptor 303.
  • the susceptor 303 includes a top surface 307 facing the substrate support ring 107.
  • the top surface 307 may include an outer portion 308 and an inner portion 310.
  • a groove 304 may be formed in the outer portion 308 and at least three recesses 312 are formed in the groove 304 to control the position of the substrate support ring 107 relative to the susceptor 303.
  • each tip 204 may be placed in a corresponding recess 312 disposed in the groove 304.
  • the width of the groove may be wider than the first surface 201 of the substrate support ring 107, so a portion of the substrate support ring 107 may be below the top surface 307 of the susceptor 303.
  • Figure 3B is a cross sectional view of the substrate support ring 107 and the susceptor 303 according to one embodiment described herein. As shown in Figure 3B, the substrate support ring 107 is disposed in the groove 304 formed in the outer portion 308 of the susceptor 303.
  • the second surface 203 (shown in Figure 3A) is disposed inside the groove 304 and below the outer portion 308.
  • the curved 206 surface such as a plurality of arcs, is disposed in the groove 304 and below the outer portion 308.
  • the distance "H3" between the first surface 201 and the outer portion 308 may be between about 0.1 mm and about 0.5 mm.
  • the substrate support assemblies described herein include a susceptor and a substrate support ring disposed on the susceptor.
  • the substrate support ring may have at least three protrusions and each protrusion has a tip.
  • the tips of the substrate support ring may be in contact with the susceptor, and the small contact area between the substrate support ring and the susceptor minimizes the unwanted heating of the edge of a substrate that is disposed on the substrate support ring.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Embodiments described herein generally relate to an apparatus for depositing materials on a substrate. The apparatus includes a substrate support assembly. The substrate support assembly includes a susceptor and a substrate support ring disposed on the susceptor. The substrate support ring has a first surface for receiving the substrate and a second surface opposite the first surface. The second surface includes at least three protrusions and each protrusion has a tip that is in contact with the susceptor. The substrate support ring is comprised of a material having poor thermal conductivity, and the contact area between the substrate support ring and the susceptor is minimized, resulting in minimum unwanted heat conduction from the susceptor to the edge of the substrate.

Description

DESIGN OF SUSCEPTOR IN CHEMICAL VAPOR DEPOSITION REACTOR
FIELD
[0001] Embodiments described herein generally relate to semiconductor manufacturing, and more specifically, to an apparatus for depositing a material on a substrate.
BACKGROUND
[0002] Integrated circuits are typically formed on substrates, particularly silicon wafers, by the sequential deposition of conductive, semiconducting or insulating layers. Continuous reduction in size of semiconductor devices is dependent upon more precise control of, for instance, the temperature of the substrate during the deposition process. Typically, the substrate is disposed on a heated susceptor during the deposition process. The substrate may be bowed because of a coating with a material having a very different coefficient of thermal expansion (CTE), or because of an inherent tensile stress. The bowed substrate, typically having a concave shape, is heated unevenly because a portion of the substrate is in contact with the heated susceptor while the remaining portion is not in contact with the heated susceptor.
[0003] Therefore, there is a need for a processing apparatus having improved substrate temperature uniformity.
SUMMARY
[0004] Embodiments described herein generally relate to an apparatus for depositing materials on a substrate. The apparatus includes a susceptor and a substrate support ring disposed on the susceptor. The substrate support ring has a first surface for receiving the substrate and a second surface opposite the first surface. The second surface includes at least three protrusions and each protrusion has a tip that is in contact with the susceptor.
[0005] In one embodiment, an apparatus is disclosed. The apparatus includes a susceptor and a substrate support ring disposed on a surface of the susceptor. The substrate support ring includes a first surface for receiving a substrate and a second surface opposite the first surface. The second surface includes at least three protrusions, each protrusion has a tip, and each tip is in contact with the susceptor.
[0006] In another embodiment, an apparatus is disclosed. The apparatus includes a chamber body and a substrate support assembly disposed in the chamber body. The substrate support assembly includes a susceptor and a substrate support ring disposed on a surface of the susceptor. The substrate support ring includes a first surface for receiving a substrate, and a second surface opposite the first surface. The second surface includes at least three protrusions, each protrusion has a tip, and each tip is in contact with the susceptor.
[0007] In another embodiment, an apparatus is disclosed. The apparatus includes a susceptor having a surface, and at least three recesses are formed in the surface of the susceptor. The substrate support assembly further includes a substrate support ring disposed on the surface of the susceptor. The substrate support ring includes a first surface for receiving a substrate and a second surface opposite the first surface. The second surface includes at least three protrusions, each protrusion has a tip, and each tip is placed in a corresponding recess of the at least three recesses.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] So that the manner in which the above recited features of the disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments. [0009] Figure 1 is a cross sectional view of an apparatus for depositing materials on a substrate according to one embodiment described herein.
[0010] Figures 2A - 2C illustrate a substrate support assembly according to embodiments described herein.
[0011] Figures 3A - 3B illustrate a substrate support assembly according to embodiments described herein.
[0012] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
DETAILED DESCRIPTION
[0013] Embodiments described herein generally relate to an apparatus for depositing materials on a substrate. The apparatus includes a substrate support assembly. The substrate support assembly includes a susceptor and a substrate support ring disposed on the susceptor. The substrate support ring has a first surface for receiving the substrate and a second surface opposite the first surface. The second surface includes at least three protrusions and each protrusion has a tip that is in contact with the susceptor.
[0014] Figure 1 is a cross sectional view of an apparatus 100 for depositing materials on a substrate 108 according to one embodiment. The apparatus 100 may be a thermal CVD chamber with an array of heating lamps 102 disposed below the substrate 108, as shown in Figure 1 . However, the apparatus 100 is not limited to the configuration shown in Figure 1 . In some embodiments, the substrate 108 may be heated by heating elements embedded in a susceptor supporting the substrate, and processing gases may be introduced through a showerhead disposed above the substrate 108. In some embodiments, the array of radiant heating lamps may be disposed over the substrate 108. [0015] As shown in Figure 1 , the apparatus 100 includes a chamber body 101 , an upper dome 128 and a lower dome 1 14 disposed in the chamber body 101 , and a base ring 136 disposed between the upper dome 128 and the lower dome 1 14. In general, the upper dome 128 and the lower dome 1 14 are formed from an optically transparent material such as quartz. A substrate support assembly 104 is disposed in the chamber body 101 between the upper dome 128 and the lower dome 1 14. The substrate 108 (not to scale) can be brought into the apparatus 100 and positioned onto the substrate support assembly 104 through a loading port (not shown). The substrate support assembly 104 includes a susceptor 103 and a substrate support ring 107 disposed on the susceptor 103. The substrate support assembly 104 may be supported by a shaft 132. The substrate 108 may be disposed on the substrate support ring 107.
[0016] The substrate support assembly 104 is shown in an elevated processing position, but may be vertically traversed by an actuator (not shown) to a loading position below the processing position to allow lift pins 105 to contact the lower dome 1 14, passing through holes in the susceptor 103, and raise the substrate 108 from the substrate support ring 107. In some embodiments, the lift pins 105 do not contact the lower dome 1 14. Instead, the lift pins 105 may contact a support (not shown) disposed over the lower dome 1 14. A robot (not shown) may then enter the apparatus 100 to engage and remove the substrate 108 therefrom through the loading port.
[0017] The substrate support assembly 104, while located in the processing position, divides the internal volume of the chamber body 101 into a processing region 156 that is above the substrate 108, and a purging region 158 below the susceptor 103. The susceptor 103 and the substrate support ring 107 may be rotated during operation by the shaft 132 to minimize the effect of thermal and processing gas flow spatial anomalies within the chamber body 101 and thus facilitate uniform processing of the substrate 108. The substrate support assembly 104 is described in detail below. [0018] One or more heating lamps, such as the array of heating lamps 102, may be disposed adjacent to and beneath the lower dome 1 14 in a specified manner around the central shaft 132 to independently control the temperature at various regions of the substrate 108 as the process gas passes over the substrate 108, thereby facilitating the deposition of a material onto the upper surface of the substrate 108.
[0019] An annular shield 167 may be optionally disposed around the substrate support assembly 104. The annular shield 167 may be coupled to a liner assembly 163 that is coupled to the base ring 136. The shield 167 prevents or minimizes leakage of heat/light noise from the lamps 102 to an upper surface 1 16 of the substrate 108 while providing a pre-heat zone for the process gases. The shield 167 may be made from SiC, sintered graphite coated with SiC, grown SiC, opaque quartz, coated quartz, or any similar, suitable material that is resistant to chemical breakdown by process and purging gases. In some embodiments, the annular shield 167 may be a preheat ring that is utilized to heat the process gases flowing from a process gas inlet 174 before the process gases reach the substrate 108.
[0020] A reflector 122 may be optionally placed over the upper dome 128 to reflect infrared light that is radiating off the substrate 108 back onto the substrate 108. The reflector 122 may be secured to the upper dome 128 using a clamp ring 130. The reflector 122 can be made of a metal such as aluminum or stainless steel. The efficiency of the reflection can be improved by coating a reflector area with a highly reflective coating such as with gold. The reflector 122 can have one or more machined channels 126 connected to a cooling source (not shown). An optical pyrometer 1 18 may be disposed on the reflector 122 for temperature measurement/control.
[0021] Process gases supplied from a process gas supply source 172 may be introduced into the processing region 156 through the process gas inlet 174 formed in the base ring 136. The process gas inlet 174 directs the process gases in a generally radially inward direction. During the film formation process, the substrate support assembly 104 may be in the processing position, which is adjacent to and at about the same elevation as the process gas inlet 174, allowing the process gases to flow along a flow path 173 across the upper surface 1 16 of the substrate 108 in a laminar flow fashion. The process gases exit the processing region 156 (along a flow path 175) through a gas outlet 178 located on the side of the apparatus 100 opposite the process gas inlet 174. Removal of the process gases through the gas outlet 178 may be facilitated by a vacuum pump 180 coupled thereto.
[0022] A purge gas may be supplied from a purge gas source 162 to the purging region 158 through an optional purge gas inlet 164 (or through the process gas inlet 174) formed in the base ring 136. The purge gas inlet 164 is disposed below the process gas inlet 174. The purge gas inlet 164 directs the purge gas in a generally radially inward direction. During the film formation process, the substrate support assembly 104 may be located at a position such that the purge gas flows along flow path 165 across a back side 1 1 1 of the susceptor 103 in a laminar flow fashion. The purge gas exits the purging region 158 (along flow path 166) and is exhausted out of the process chamber through the gas outlet 178.
[0023] Figures 2A - 2C illustrate a substrate support assembly according to embodiments described herein. Figure 2A is an exploded view of the substrate support assembly 104 according to embodiments described herein. The substrate support assembly 104 includes the substrate support ring 107 and the susceptor 103. The substrate support ring 107 includes a first surface 201 and a second surface 203 opposite the first surface 201 . The substrate 108 is disposed on the first surface 201 of the substrate support ring 107 during operation, and more particularly, the edge of the substrate 108 is in contact with the substrate support ring 107. The second surface 203 includes at least three protrusions 202 and each protrusion 202 has a tip 204. The tip 204 may be disposed on the susceptor 103. The susceptor 103 may be made of silicon carbide or graphite coated silicon carbide, so the susceptor 103 may absorb radiant energy from the lamps 102 disposed below and heat the substrate 108. The tip 204 may be pointed so the contact area between the substrate support ring 107 and the susceptor 103 may be very small. In addition, the substrate support ring 107 may be made of a material that has poor thermal conductivity, such as quartz. Thus, the unwanted edge heating of the substrate 108 is minimized due to the small contact area between the substrate support ring 107 and the heated susceptor 103.
[0024] A curved surface 206, such as an arc, may be formed between adjacent tips 204. The curved surface 206 does not have any stress concentrating areas since the curved surface 206 does not contain any sharp angles. Such design helps maintain the structure integrity of the substrate support ring 107 at elevated temperatures. Thus, the maximum number protrusions 202 may depend on the degree of curvature of the curved surfaces 206. Too many protrusions 202 may result in sharp angled surfaces between protrusions. In one embodiment, there are at least three protrusions. Because the edge of the substrate 108 makes continuous contact with the first surface 201 of the substrate support ring 107, which prevents process gases from flowing across the back side of the substrate 108, backside deposition on the substrate 108 is minimized.
[0025] The susceptor 103 includes a top surface 207 facing the substrate support ring 107. The top surface 207 may include an outer portion 208 and an inner portion 210. The substrate support ring 107 may be disposed on the outer portion 208. At least three recesses 212, such as holes or grooves, may be formed in the outer portion 208 to control the position of the substrate support ring 107 relative to the susceptor 103. As the substrate support ring 107 is placed on the susceptor 103, each tip 204 may be placed in a corresponding recess 212 disposed in the outer portion 208 of the susceptor 103. As the susceptor 103 is rotated by the shaft 132 (shown in Figure 1 ) during operation, the substrate support ring 107 may be stationary with respect to the susceptor 103. The inner portion 210 may be a curved surface, as shown in Figures 2A and 2B, or may be a substantially flat surface, as shown in Figure 2C. [0026] Figure 2B is a cross sectional side view of the substrate support assembly 104 supporting the substrate 108 according to one embodiment described herein. As shown in Figure 2B, the susceptor 103 has a curved inner portion 210. As the substrate 108 bows towards the inner portion 210, the curved inner portion 210 ensures that substrate 108 is not touching the heated susceptor 103. In this configuration, the height "H1 " of the substrate support ring 107 may be relatively small, such as between about 3 mm and about 10 mm.
[0027] Figure 2C is a cross sectional side view of the substrate support assembly 104 supporting the substrate 108 according to another embodiment described herein. As shown in Figure 2C, the susceptor 103 has a flat inner portion 210. Thus, the height "H2" of the substrate support ring 107 may be greater than the height Ή1 ", and the height "H2" may be between about 4 mm and about 10 mm, in order to prevent the bowed substrate 108 from contacting the heated susceptor 103.
[0028] Figures 3A - 3B illustrate the substrate support assembly 104 according to embodiments described herein. Figure 3A is an exploded view of the substrate support assembly 104 according to embodiments described herein. The substrate support assembly 104 includes the substrate support ring 107 and a susceptor 303. The susceptor 303 includes a top surface 307 facing the substrate support ring 107. The top surface 307 may include an outer portion 308 and an inner portion 310. A groove 304 may be formed in the outer portion 308 and at least three recesses 312 are formed in the groove 304 to control the position of the substrate support ring 107 relative to the susceptor 303. As the substrate support ring 107 is placed in the groove 304, each tip 204 may be placed in a corresponding recess 312 disposed in the groove 304. The width of the groove may be wider than the first surface 201 of the substrate support ring 107, so a portion of the substrate support ring 107 may be below the top surface 307 of the susceptor 303. [0029] Figure 3B is a cross sectional view of the substrate support ring 107 and the susceptor 303 according to one embodiment described herein. As shown in Figure 3B, the substrate support ring 107 is disposed in the groove 304 formed in the outer portion 308 of the susceptor 303. In this configuration, the second surface 203 (shown in Figure 3A) is disposed inside the groove 304 and below the outer portion 308. Thus, the curved 206 surface, such as a plurality of arcs, is disposed in the groove 304 and below the outer portion 308. As a result of having the arcs disposed below the outer portion 308, the laminar flow of the process gases across the upper surface 1 16 of the substrate 108 (shown in Figure 1 ) is not disturbed. The distance "H3" between the first surface 201 and the outer portion 308 may be between about 0.1 mm and about 0.5 mm.
[0030] The substrate support assemblies described herein include a susceptor and a substrate support ring disposed on the susceptor. The substrate support ring may have at least three protrusions and each protrusion has a tip. The tips of the substrate support ring may be in contact with the susceptor, and the small contact area between the substrate support ring and the susceptor minimizes the unwanted heating of the edge of a substrate that is disposed on the substrate support ring.
[0031] While the foregoing is directed to embodiments of the disclosure, other and further embodiments may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

Claims:
1 . An apparatus, comprising:
a susceptor; and
a substrate support ring disposed on a surface of the susceptor, wherein the substrate support ring has a first surface for receiving a substrate and a second surface opposite the first surface, wherein the second surface has at least three protrusions, each protrusion has a tip, and each tip is in contact with the susceptor.
2. The apparatus of claim 1 , wherein the surface of the susceptor has an inner portion and an outer portion, and the substrate support ring is disposed on the outer portion of the surface of the susceptor.
3. The apparatus of claim 2, further comprising at least three recesses formed in the outer portion of the surface of the susceptor, wherein each tip of the substrate support ring is placed in a corresponding recess.
4. The apparatus of claim 3, further comprising a groove disposed in the outer portion of the surface of the susceptor, wherein the at least three recesses are formed in the groove.
5. The apparatus of claim 1 , where in the substrate support ring further includes a curved surface between adjacent tips.
6. The apparatus of claim 5, wherein the curved surface is an arc.
7. The apparatus of claim 2, wherein the inner portion is flat, and the substrate support ring has a height between about 4mm and about 10 mm.
8. The apparatus of claim 2, wherein the inner portion is curved, and the substrate support ring has a height between about 3 mm and about 10 mm.
9. An apparatus, comprising:
a chamber body; and
a substrate support assembly disposed in the chamber body, wherein the substrate support assembly comprises:
a susceptor; and
a substrate support ring disposed on a surface of the susceptor, wherein the substrate support ring has a first surface for receiving a substrate and a second surface opposite the first surface, wherein the second surface has at least three protrusions, each protrusion has a tip, and each tip is in contact with the susceptor.
10. The apparatus of claim 9, wherein the surface of the susceptor has an inner portion and an outer portion, and the substrate support ring is disposed on the outer portion of the surface of the susceptor.
1 1 . The apparatus of claim 10, further comprising at least three recesses formed in the outer portion of the surface of the susceptor, wherein each tip of the substrate support ring is placed in a corresponding recess.
12. The apparatus of claim 1 1 , further comprising a groove disposed in the outer portion of the surface of the susceptor, wherein the at least three recesses are formed in the groove.
13. An apparatus, comprising:
a susceptor having a surface, wherein at least three recesses are formed in the surface of the susceptor; and
a substrate support ring disposed on the surface of the susceptor, wherein the substrate support ring has a first surface for receiving a substrate and a second surface opposite the first surface, wherein the second surface has at least three protrusions, each protrusion has a tip, and each tip is placed in a corresponding recess of the at least three recesses.
14. The apparatus of claim 13, further comprising a groove disposed in the surface of the susceptor, wherein the at least three recesses are formed in the groove.
15. The apparatus of claim 13, where in the substrate support ring further includes a curved surface between adjacent tips.
PCT/US2015/035243 2014-07-10 2015-06-11 Design of susceptor in chemical vapor deposition reactor Ceased WO2016007253A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201580032737.4A CN106463453A (en) 2014-07-10 2015-06-11 Design of susceptor in chemical vapor deposition reactor
SG11201610304SA SG11201610304SA (en) 2014-07-10 2015-06-11 Design of susceptor in chemical vapor deposition reactor
KR1020177003410A KR20170030581A (en) 2014-07-10 2015-06-11 Design of susceptor in chemical vapor deposition reactor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462023024P 2014-07-10 2014-07-10
US62/023,024 2014-07-10

Publications (1)

Publication Number Publication Date
WO2016007253A1 true WO2016007253A1 (en) 2016-01-14

Family

ID=55064670

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2015/035243 Ceased WO2016007253A1 (en) 2014-07-10 2015-06-11 Design of susceptor in chemical vapor deposition reactor

Country Status (6)

Country Link
US (1) US20160010208A1 (en)
KR (1) KR20170030581A (en)
CN (1) CN106463453A (en)
SG (1) SG11201610304SA (en)
TW (1) TWI646214B (en)
WO (1) WO2016007253A1 (en)

Families Citing this family (269)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
DE102016210203B3 (en) 2016-06-09 2017-08-31 Siltronic Ag Susceptor for holding a semiconductor wafer, method for depositing an epitaxial layer on a front side of a semiconductor wafer and semiconductor wafer with an epitaxial layer
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
KR102546317B1 (en) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Gas supply unit and substrate processing apparatus including the same
KR102762543B1 (en) 2016-12-14 2025-02-05 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
TWI794238B (en) 2017-07-13 2023-03-01 荷蘭商Ａｓｍ智慧財產控股公司 Apparatus and method for removal of oxide and carbon from semiconductor films in a single processing chamber
KR20190009245A (en) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. Methods for forming a semiconductor device structure and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
TWI815813B (en) 2017-08-04 2023-09-21 荷蘭商Ａｓｍ智慧財產控股公司 Showerhead assembly for distributing a gas within a reaction chamber
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10450655B2 (en) 2017-10-27 2019-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. CVD apparatus with multi-zone thickness control
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
TWI791689B (en) 2017-11-27 2023-02-11 荷蘭商Ａｓｍ智慧財產控股私人有限公司 Apparatus including a clean mini environment
WO2019103613A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. A storage device for storing wafer cassettes for use with a batch furnace
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
TWI799494B (en) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 Deposition method
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
WO2019158960A1 (en) 2018-02-14 2019-08-22 Asm Ip Holding B.V. A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (en) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. Substrate processing method and apparatus
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
KR102646467B1 (en) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102600229B1 (en) 2018-04-09 2023-11-10 에이에스엠 아이피 홀딩 비.브이. Substrate supporting device, substrate processing apparatus including the same and substrate processing method
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
TWI843623B (en) 2018-05-08 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US12272527B2 (en) 2018-05-09 2025-04-08 Asm Ip Holding B.V. Apparatus for use with hydrogen radicals and method of using same
KR102596988B1 (en) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate and a device manufactured by the same
TWI840362B (en) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (en) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing system
KR20250134000A (en) 2018-06-27 2025-09-09 에이에스엠 아이피 홀딩 비.브이. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR102707956B1 (en) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. Method for deposition of a thin film
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
CN110970344B (en) 2018-10-01 2024-10-25 Asmip控股有限公司 Substrate holding device, system including the same and method of using the same
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (en) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same
KR102605121B1 (en) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
KR102546322B1 (en) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
US12378665B2 (en) 2018-10-26 2025-08-05 Asm Ip Holding B.V. High temperature coatings for a preclean and etch apparatus and related methods
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR102748291B1 (en) 2018-11-02 2024-12-31 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and substrate processing apparatus including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (en) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. A method for cleaning a substrate processing apparatus
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (en) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー Method and system for forming device structures using selective deposition of gallium nitride - Patents.com
TWI866480B (en) 2019-01-17 2024-12-11 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
KR102727227B1 (en) 2019-01-22 2024-11-07 에이에스엠 아이피 홀딩 비.브이. Semiconductor processing device
WO2020159708A1 (en) * 2019-01-31 2020-08-06 Lam Research Corporation Showerhead with configurable gas outlets
TWI838458B (en) 2019-02-20 2024-04-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Apparatus and methods for plug fill deposition in 3-d nand applications
TWI845607B (en) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
KR102638425B1 (en) 2019-02-20 2024-02-21 에이에스엠 아이피 홀딩 비.브이. Method and apparatus for filling a recess formed within a substrate surface
KR102626263B1 (en) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. Cyclical deposition method including treatment step and apparatus for same
TWI842826B (en) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing apparatus and method for processing substrate
KR102858005B1 (en) 2019-03-08 2025-09-09 에이에스엠 아이피 홀딩 비.브이. Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
JP2020167398A (en) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー Door openers and substrate processing equipment provided with door openers
KR102809999B1 (en) 2019-04-01 2025-05-19 에이에스엠 아이피 홀딩 비.브이. Method of manufacturing semiconductor device
KR102897355B1 (en) 2019-04-19 2025-12-08 에이에스엠 아이피 홀딩 비.브이. Layer forming method and apparatus
KR20200125453A (en) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. Gas-phase reactor system and method of using same
KR102929471B1 (en) 2019-05-07 2026-02-20 에이에스엠 아이피 홀딩 비.브이. Chemical source vessel with dip tube
KR102869364B1 (en) 2019-05-07 2025-10-10 에이에스엠 아이피 홀딩 비.브이. Method for Reforming Amorphous Carbon Polymer Film
KR102929472B1 (en) 2019-05-10 2026-02-20 에이에스엠 아이피 홀딩 비.브이. Method of depositing material onto a surface and structure formed according to the method
JP7598201B2 (en) 2019-05-16 2024-12-11 エーエスエム・アイピー・ホールディング・ベー・フェー Wafer boat handling apparatus, vertical batch furnace and method
JP7612342B2 (en) 2019-05-16 2025-01-14 エーエスエム・アイピー・ホールディング・ベー・フェー Wafer boat handling apparatus, vertical batch furnace and method
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
KR20200141003A (en) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. Gas-phase reactor system including a gas detector
KR102918757B1 (en) 2019-06-10 2026-01-28 에이에스엠 아이피 홀딩 비.브이. Method for cleaning quartz epitaxial chambers
KR20200143254A (en) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
KR102911421B1 (en) 2019-07-03 2026-01-12 에이에스엠 아이피 홀딩 비.브이. Temperature control assembly for substrate processing apparatus and method of using same
JP7499079B2 (en) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー Plasma device using coaxial waveguide and substrate processing method
CN112216646B (en) 2019-07-10 2026-02-10 Asmip私人控股有限公司 Substrate support assembly and substrate processing apparatus including the thereof
KR102895115B1 (en) 2019-07-16 2025-12-03 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR102860110B1 (en) 2019-07-17 2025-09-16 에이에스엠 아이피 홀딩 비.브이. Methods of forming silicon germanium structures
KR102955799B1 (en) 2019-07-17 2026-04-21 에이에스엠 아이피 홀딩 비.브이. Radical assist ignition plasma system and method
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
KR102903090B1 (en) 2019-07-19 2025-12-19 에이에스엠 아이피 홀딩 비.브이. Method of Forming Topology-Controlled Amorphous Carbon Polymer Film
TWI839544B (en) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming topology-controlled amorphous carbon polymer film
TWI851767B (en) 2019-07-29 2024-08-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
CN112309900B (en) 2019-07-30 2025-11-04 Asmip私人控股有限公司 Substrate processing equipment
CN112309899B (en) 2019-07-30 2025-11-14 Asmip私人控股有限公司 Substrate processing equipment
KR102971074B1 (en) 2019-07-30 2026-05-29 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and method
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US12622218B2 (en) 2019-07-31 2026-05-05 Asm Ip Holding B.V. Cassette lid opening device
CN112323048B (en) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 Liquid level sensor for chemical source container
CN112342526A (en) 2019-08-09 2021-02-09 Asm Ip私人控股有限公司 Heater assembly including cooling device and method of using same
KR102966009B1 (en) 2019-08-14 2026-05-19 에이에스엠 아이피 홀딩 비.브이. Apparatus and method to process wafers
JP2022544221A (en) 2019-08-16 2022-10-17 ラム リサーチ コーポレーション Spatial adjustment deposition to compensate for various bows in the wafer
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP7810514B2 (en) 2019-08-21 2026-02-03 エーエスエム・アイピー・ホールディング・ベー・フェー Film-forming raw material mixed gas generating device and film-forming device
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
KR102983146B1 (en) 2019-08-22 2026-06-26 에이에스엠 아이피 홀딩 비.브이. Method for forming a structure with a hole
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR102928101B1 (en) 2019-08-23 2026-02-13 에이에스엠 아이피 홀딩 비.브이. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
CN112442674A (en) 2019-09-03 2021-03-05 Asm Ip私人控股有限公司 Method and apparatus for depositing chalcogenide films and structures including films
KR102806450B1 (en) 2019-09-04 2025-05-12 에이에스엠 아이피 홀딩 비.브이. Methods for selective deposition using a sacrificial capping layer
KR102733104B1 (en) 2019-09-05 2024-11-22 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US12469693B2 (en) 2019-09-17 2025-11-11 Asm Ip Holding B.V. Method of forming a carbon-containing layer and structure including the layer
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (en) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 Method for forming topologically selective silicon oxide film through cyclic plasma enhanced deposition process
TWI846953B (en) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing device
KR102948143B1 (en) 2019-10-08 2026-04-07 에이에스엠 아이피 홀딩 비.브이. Reactor system including a gas distribution assembly for use with activated species and method of using same
TWI925822B (en) 2019-10-08 2026-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Gas injection system, reactor system, and method of depositing material on surface of substratewithin reaction chamber
KR102879443B1 (en) 2019-10-10 2025-11-03 에이에스엠 아이피 홀딩 비.브이. Method of forming a photoresist underlayer and structure including same
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (en) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of topology-selective film formation of silicon oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR102845724B1 (en) 2019-10-21 2025-08-13 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for selectively etching films
KR102960940B1 (en) 2019-10-25 2026-05-04 에이에스엠 아이피 홀딩 비.브이. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR102890638B1 (en) 2019-11-05 2025-11-25 에이에스엠 아이피 홀딩 비.브이. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR102861314B1 (en) 2019-11-20 2025-09-17 에이에스엠 아이피 홀딩 비.브이. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
KR20210065848A (en) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112951697B (en) 2019-11-26 2025-07-29 Asmip私人控股有限公司 Substrate processing apparatus
CN120432376A (en) 2019-11-29 2025-08-05 Asm Ip私人控股有限公司 Substrate processing equipment
CN120998766A (en) 2019-11-29 2025-11-21 Asm Ip私人控股有限公司 Substrate processing equipment
JP7527928B2 (en) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー Substrate processing apparatus and substrate processing method
KR20210070898A (en) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
CN112992667A (en) 2019-12-17 2021-06-18 Asm Ip私人控股有限公司 Method of forming vanadium nitride layer and structure including vanadium nitride layer
KR102943768B1 (en) 2019-12-19 2026-03-26 에이에스엠 아이피 홀딩 비.브이. Methods for filling a gap feature on a substrate and related semiconductor structures
TWI901623B (en) 2020-01-06 2025-10-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Gas supply assembly and valve plate assembly
KR102974179B1 (en) 2020-01-06 2026-06-05 에이에스엠 아이피 홀딩 비.브이. Channeled lift pin
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102882467B1 (en) 2020-01-16 2025-11-05 에이에스엠 아이피 홀딩 비.브이. Method of forming high aspect ratio features
KR102675856B1 (en) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. Method of forming thin film and method of modifying surface of thin film
TWI889744B (en) 2020-01-29 2025-07-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Contaminant trap system, and baffle plate stack
TWI871421B (en) 2020-02-03 2025-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Devices and structures including a vanadium or indium layer and methods and systems for forming the same
KR20210100010A (en) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. Method and apparatus for transmittance measurements of large articles
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
KR102916725B1 (en) 2020-02-13 2026-01-23 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus including light receiving device and calibration method of light receiving device
TWI915339B (en) 2020-02-13 2026-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Gas distribution assembly, shower plate assembly, and method of adjusting conductance of gas to reaction chamber
TWI855223B (en) 2020-02-17 2024-09-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for growing phosphorous-doped silicon layer
TWI895326B (en) 2020-02-28 2025-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 System dedicated for parts cleaning
TWI914330B (en) 2020-03-04 2026-02-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Reactor system, and alignment fixture
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR20210116240A (en) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. Substrate handling device with adjustable joints
KR102775390B1 (en) 2020-03-12 2025-02-28 에이에스엠 아이피 홀딩 비.브이. Method for Fabricating Layer Structure Having Target Topological Profile
US12173404B2 (en) 2020-03-17 2024-12-24 Asm Ip Holding B.V. Method of depositing epitaxial material, structure formed using the method, and system for performing the method
KR102755229B1 (en) 2020-04-02 2025-01-14 에이에스엠 아이피 홀딩 비.브이. Thin film forming method
TWI887376B (en) 2020-04-03 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for manufacturing semiconductor device
TWI888525B (en) 2020-04-08 2025-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Apparatus and methods for selectively etching silcon oxide films
KR20210127620A (en) 2020-04-13 2021-10-22 에이에스엠 아이피 홀딩 비.브이. method of forming a nitrogen-containing carbon film and system for performing the method
KR102970066B1 (en) 2020-04-15 2026-05-28 에이에스엠 아이피 홀딩 비.브이. Method of forming chromium nitride layer and structure including the chromium nitride layer
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
TW202143328A (en) 2020-04-21 2021-11-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for adjusting a film stress
KR20210132600A (en) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
TWI887400B (en) 2020-04-24 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods and apparatus for stabilizing vanadium compounds
TWI921332B (en) 2020-04-24 2026-04-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods of forming structures including vanadium boride and vanadium phosphide layers, structures and devices formed thereby, and systems for manufacturing the devices
JP7816915B2 (en) 2020-04-24 2026-02-18 エーエスエム・アイピー・ホールディング・ベー・フェー Method for forming a vanadium nitride-containing layer and structures including a vanadium nitride-containing layer
TWI913262B (en) 2020-04-24 2026-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Vertical batch furnace assembly, and method for cooling vertical batch furnace
KR102783898B1 (en) 2020-04-29 2025-03-18 에이에스엠 아이피 홀딩 비.브이. Solid source precursor vessel
KR20210134869A (en) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Fast FOUP swapping with a FOUP handler
TWI907417B (en) 2020-05-04 2025-12-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Semiconductor processing system
JP7736446B2 (en) 2020-05-07 2025-09-09 エーエスエム・アイピー・ホールディング・ベー・フェー Reactor system with tuned circuit
KR20210137395A (en) 2020-05-07 2021-11-17 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for performing an in-situ etch of reaction chambers with fluorine-based radicals
KR102788543B1 (en) 2020-05-13 2025-03-27 에이에스엠 아이피 홀딩 비.브이. Laser alignment fixture for a reactor system
TWI915365B (en) 2020-05-15 2026-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming a silicon germanium layer, semiconductor structure, semiconductor device, method of forming a deposition layer, and deposition system
TW202614152A (en) 2020-05-19 2026-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing apparatus
KR20210145079A (en) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. Flange and apparatus for processing substrates
KR102795476B1 (en) 2020-05-21 2025-04-11 에이에스엠 아이피 홀딩 비.브이. Structures including multiple carbon layers and methods of forming and using same
TWI873343B (en) 2020-05-22 2025-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Reaction system for forming thin film on substrate
KR20210146802A (en) 2020-05-26 2021-12-06 에이에스엠 아이피 홀딩 비.브이. Method for depositing boron and gallium containing silicon germanium layers
TWI876048B (en) 2020-05-29 2025-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing device
TW202212620A (en) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Apparatus for processing substrate, method of forming film, and method of controlling apparatus for processing substrate
TW202618032A (en) 2020-06-16 2026-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods and systems for epitaxially growing boron doped silicon germanium layers and field effect transistors including the same
TWI908816B (en) 2020-06-24 2025-12-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming a layer provided with silicon
TWI873359B (en) 2020-06-30 2025-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing method
US12431354B2 (en) 2020-07-01 2025-09-30 Asm Ip Holding B.V. Silicon nitride and silicon oxide deposition methods using fluorine inhibitor
TW202202649A (en) 2020-07-08 2022-01-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing method
KR20220010438A (en) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. Structures and methods for use in photolithography
TWI878570B (en) 2020-07-20 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method and system for depositing molybdenum layers
KR20220011092A (en) 2020-07-20 2022-01-27 에이에스엠 아이피 홀딩 비.브이. Method and system for forming structures including transition metal layers
US12322591B2 (en) 2020-07-27 2025-06-03 Asm Ip Holding B.V. Thin film deposition process
KR20220020210A (en) 2020-08-11 2022-02-18 에이에스엠 아이피 홀딩 비.브이. Methods for Depositing a Titinum Aluminun Carbide Film Structuru on a Substrate and Releated Semiconductor Structures
KR102915124B1 (en) 2020-08-14 2026-01-19 에이에스엠 아이피 홀딩 비.브이. Method for processing a substrate
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
TWI911263B (en) 2020-08-25 2026-01-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for cleaning a substrate, method for selectively depositing, and reaction system
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
TWI911265B (en) 2020-08-27 2026-01-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming patterned structures, method of manipulating mechanical property, and device structure
TWI904232B (en) 2020-09-10 2025-11-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for depositing gap filing fluids and related systems and devices
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
KR20220036866A (en) 2020-09-16 2022-03-23 에이에스엠 아이피 홀딩 비.브이. Silicon oxide deposition method
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TWI889903B (en) 2020-09-25 2025-07-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Semiconductor processing method
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
CN114388427A (en) 2020-10-06 2022-04-22 Asm Ip私人控股有限公司 Method and system for forming silicon nitride on sidewalls of features
KR20220045900A (en) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. Deposition method and an apparatus for depositing a silicon-containing material
CN114293174A (en) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 Gas supply unit and substrate processing apparatus including the same
TWI918732B (en) 2020-10-14 2026-03-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of depositing material on stepped structure
KR102873665B1 (en) 2020-10-15 2025-10-17 에이에스엠 아이피 홀딩 비.브이. Method of manufacturing semiconductor device, and substrate treatment apparatus using ether-cat
KR102943887B1 (en) 2020-10-16 2026-03-25 에이에스엠 아이피 홀딩 비.브이. Method of forming structures for threshold voltage control
KR20220053482A (en) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. Method of depositing vanadium metal, structure, device and a deposition assembly
TW202223136A (en) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming layer on substrate, and semiconductor processing system
TW202229620A (en) 2020-11-12 2022-08-01 特文特大學 Deposition system, method for controlling reaction condition, method for depositing
TW202229795A (en) 2020-11-23 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 A substrate processing apparatus with an injector
TW202235649A (en) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for filling a gap and related systems and devices
KR20220076343A (en) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. an injector configured for arrangement within a reaction chamber of a substrate processing apparatus
KR20220077875A (en) 2020-12-02 2022-06-09 에이에스엠 아이피 홀딩 비.브이. Cleaning fixture for showerhead assemblies
US12255053B2 (en) 2020-12-10 2025-03-18 Asm Ip Holding B.V. Methods and systems for depositing a layer
TWI916460B (en) 2020-12-14 2026-03-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming structures for threshold voltage control
CN114639631A (en) 2020-12-16 2022-06-17 Asm Ip私人控股有限公司 Fixing device for measuring jumping and swinging
CN114649247A (en) 2020-12-18 2022-06-21 Asm Ip私人控股有限公司 Wafer processing apparatus with rotatable table
TW202226899A (en) 2020-12-22 2022-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Plasma treatment device having matching box
TWI922546B (en) 2020-12-22 2026-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate
TWI922548B (en) 2020-12-22 2026-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Precursor capsule, precursor vessel, vapor deposition assembly, and method of loading solid precursor into precursor vessel
KR20220097266A (en) 2020-12-30 2022-07-07 에이에스엠 아이피 홀딩 비.브이. Compositions for depositing material, synthesis methods and uses
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
USD1099184S1 (en) 2021-11-29 2025-10-21 Asm Ip Holding B.V. Weighted lift pin
USD1060598S1 (en) 2021-12-03 2025-02-04 Asm Ip Holding B.V. Split showerhead cover
USD1086087S1 (en) * 2023-03-30 2025-07-29 Samsung Electronics Co., Ltd. CMP (chemical mechanical planarization) retaining ring

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5584936A (en) * 1995-12-14 1996-12-17 Cvd, Incorporated Susceptor for semiconductor wafer processing
US20030209326A1 (en) * 2002-05-07 2003-11-13 Mattson Technology, Inc. Process and system for heating semiconductor substrates in a processing chamber containing a susceptor
US20080069951A1 (en) * 2006-09-15 2008-03-20 Juan Chacin Wafer processing hardware for epitaxial deposition with reduced auto-doping and backside defects
US20100107973A1 (en) * 2008-10-31 2010-05-06 Asm America, Inc. Self-centering susceptor ring assembly
US20120270407A1 (en) * 2011-04-19 2012-10-25 Siltronic Ag Susceptor for supporting a semiconductor wafer and method for depositing a layer on a front side of a semiconductor wafer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2955736B2 (en) * 1993-12-27 1999-10-04 株式会社住友金属エレクトロデバイス Multilayer ceramic package for semiconductor device
US5518593A (en) * 1994-04-29 1996-05-21 Applied Komatsu Technology, Inc. Shield configuration for vacuum chamber
JP4041268B2 (en) * 2000-07-05 2008-01-30 京セラ株式会社 Wiring board manufacturing method
JP2007251017A (en) * 2006-03-17 2007-09-27 Ngk Spark Plug Co Ltd Wiring board, multi-cavity wiring board, and manufacturing method thereof
DE112010004736B4 (en) * 2009-12-11 2022-04-21 Sumco Corporation RECORDING FOR CVD AND METHOD OF MAKING A FILM USING SAME

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5584936A (en) * 1995-12-14 1996-12-17 Cvd, Incorporated Susceptor for semiconductor wafer processing
US20030209326A1 (en) * 2002-05-07 2003-11-13 Mattson Technology, Inc. Process and system for heating semiconductor substrates in a processing chamber containing a susceptor
US20080069951A1 (en) * 2006-09-15 2008-03-20 Juan Chacin Wafer processing hardware for epitaxial deposition with reduced auto-doping and backside defects
US20100107973A1 (en) * 2008-10-31 2010-05-06 Asm America, Inc. Self-centering susceptor ring assembly
US20120270407A1 (en) * 2011-04-19 2012-10-25 Siltronic Ag Susceptor for supporting a semiconductor wafer and method for depositing a layer on a front side of a semiconductor wafer

Also Published As

Publication number Publication date
SG11201610304SA (en) 2017-01-27
US20160010208A1 (en) 2016-01-14
TWI646214B (en) 2019-01-01
TW201602404A (en) 2016-01-16
CN106463453A (en) 2017-02-22
KR20170030581A (en) 2017-03-17

Similar Documents

Publication Publication Date Title
US20160010208A1 (en) Design of susceptor in chemical vapor deposition reactor
US10170342B2 (en) Flow controlled liner having spatially distributed gas passages
US11537151B2 (en) Multi-channel flow ratio controller and processing chamber
US20160068996A1 (en) Susceptor and pre-heat ring for thermal processing of substrates
US20150368829A1 (en) Substrate thermal control in an epi chamber
US9842753B2 (en) Absorbing lamphead face
CN105981142B (en) Device for self-centering of preheating member
US10519547B2 (en) Susceptor design to eliminate deposition valleys in the wafer
JP2008227487A (en) Microbatch deposition chamber with radiant heating
TW201943885A (en) Upper dome for EPI chamber
CN116190266A (en) Multi-zone lamp control and individual lamp control in the lamp head
CN105714273A (en) Recursive Pumping Member
WO2014176174A1 (en) Absorbing lamphead face
CN117981069A (en) Substrate Support
KR20240038161A (en) Purge ring for pedestal assembly

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15819381

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20177003410

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 15819381

Country of ref document: EP

Kind code of ref document: A1