WO2015192435A1 - Tft阵列基板结构 - Google Patents

Tft阵列基板结构 Download PDF

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Publication number
WO2015192435A1
WO2015192435A1 PCT/CN2014/082502 CN2014082502W WO2015192435A1 WO 2015192435 A1 WO2015192435 A1 WO 2015192435A1 CN 2014082502 W CN2014082502 W CN 2014082502W WO 2015192435 A1 WO2015192435 A1 WO 2015192435A1
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sub
pixel electrode
array substrate
pixels
tft array
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PCT/CN2014/082502
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English (en)
French (fr)
Inventor
吴川
罗时勋
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深圳市华星光电技术有限公司
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Priority to US14/381,987 priority Critical patent/US20160238906A1/en
Publication of WO2015192435A1 publication Critical patent/WO2015192435A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134336—Matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/56—Substrates having a particular shape, e.g. non-rectangular

Definitions

  • the present invention relates to the field of liquid crystal display, and in particular to a TFT (Thin Film Transistor) array substrate structure. Background technique
  • Liquid Crystal Display has many advantages such as thin body, power saving, no radiation, etc., and has been widely used, such as mobile phones, personal digital assistants (PDAs), digital cameras, computer screens or laptop screens. Wait.
  • PDAs personal digital assistants
  • LCD Liquid Crystal Display
  • a liquid crystal display device includes a housing, a liquid crystal display panel disposed in the housing, and a backlight module (Backlight module:) disposed in the housing.
  • the conventional liquid crystal display panel includes a TFT array substrate 100 , a color filter substrate ( CF ) 300 disposed above and disposed on the TFT array substrate 100 , and is disposed on the array substrate 100 and the color
  • the liquid crystal layer 500 and the sealant frame 700 between the film substrates 300 are controlled by applying a driving voltage between the TFT array substrate 100 and the color filter substrate 300 to control the rotation of the liquid crystal molecules of the liquid crystal layer 500.
  • the light from the backlight module is refracted to produce a picture.
  • liquid crystal display panels on the mainstream market, according to the different arrangement of liquid crystal molecules, they can be divided into three categories: TN (twisted nematic) / STN (super twisted nematic), IPS (intra-board switching) / FFS (edge switching) and VA (vertical alignment) type.
  • VA Vertical Alignment
  • VA Vertical Alignment
  • the current design divides the sub-pixel area into two main areas (main) and sub (sub).
  • a plurality of sub-pixels 400 corresponding to the black matrix 200 are disposed on the TFT array substrate, and each of the sub-pixels 400 is provided with a main area 402 and a sub-area 404 corresponding to the black matrix 200, and is disposed between the sub-pixels 400.
  • the data line 600 is provided with a scan line 800 between the main area 402 and the sub-area 404, and a pixel electrode 900 parallel to the data line 600 is disposed between the sub-pixel main area 402 and the sub-area 404.
  • the pixel electrode includes a stem 902 and a branch 904.
  • An object of the present invention is to provide a TFT array substrate structure. By disposing a pixel electrode trunk on a data line, it can be applied to a curved liquid crystal display panel to effectively avoid dark lines and uneven brightness during display, thereby improving display performance. .
  • the present invention provides a TFT array substrate structure including a plurality of sub-pixels corresponding to a black matrix, each of the sub-pixels including a main area and a sub-area corresponding to a black matrix, and between the sub-pixels.
  • a data line, a gate scan line is disposed between the main area and the sub-area
  • a pixel electrode trunk is disposed between the adjacent two sub-pixels
  • pixel electrode branches are respectively disposed on the main area and the sub-area of the two sub-pixels
  • the pixel electrode branches are electrically connected to the pixel electrode trunks, respectively.
  • the pixel electrode trunk is located above the data line.
  • the width of the pixel electrode trunk is smaller than the width of the black matrix between the two sub-pixels.
  • the pixel electrode branches in the two main regions of the two sub-pixels collectively form an X shape.
  • the pixel electrode branches in the two sub-regions of the two sub-pixels collectively form an X shape.
  • the two main areas of the two sub-pixels and the pixel electrode branches in the two sub-areas form an X shape together.
  • the pixel electrode trunk and the pixel electrode branch are made of indium tin oxide.
  • the TFT array substrate structure is used for a vertical alignment type liquid crystal display panel.
  • the TFT array substrate structure is used for a curved liquid crystal display panel.
  • the present invention also provides a TFT array substrate structure, including a plurality of sub-pixels corresponding to a black matrix, wherein each sub-pixel includes a main area and a sub-area corresponding to a black matrix, and a data line is disposed between the sub-pixels.
  • a gate scan line is disposed between the main area and the sub-area, and a pixel electrode trunk is disposed between the adjacent two sub-pixels, and pixel electrode branches are respectively disposed on the main area and the sub-area of the two sub-pixels, wherein the pixel The electrode branches are electrically connected to the pixel electrode trunks respectively; the pixel electrode trunks are located above the data lines;
  • the width of the pixel electrode trunk is smaller than the width of the black matrix between the two sub-pixels
  • the two main regions of the two sub-pixels are in common with the pixel electrode branches in the two sub-regions X-shaped;
  • the pixel electrode trunk and the pixel electrode branch are made of indium tin oxide;
  • the TFT array substrate structure is used for a vertical alignment type liquid crystal display panel.
  • the TFT array substrate structure provided by the present invention has a small influence on an electric field in a region covered by a black matrix when the pixel electrode is disposed above the data line so as to be relatively displaced during bending of the panel. Effectively improve the electrical characteristics, avoiding the appearance of dark lines, thereby improving the quality of the liquid crystal display panel.
  • FIG. 1 is a schematic cross-sectional view of a conventional liquid crystal display panel
  • FIG. 2 is a schematic plan view showing a structure of a conventional TFT array substrate
  • FIG. 3 is a top plan view showing the structure of a TFT array substrate of the present invention.
  • FIG. 4 is a top plan view showing another embodiment of the structure of the TFT array substrate of the present invention. detailed description
  • the present invention provides a TFT array substrate structure, including: a plurality of sub-pixels 4 corresponding to a black matrix 2 on a color film substrate, each of the sub-pixels 4 including a main area 42 corresponding to the black matrix 2 And the sub-region 44, the data line 6 is disposed between the sub-pixels, the gate scan line 8 is disposed between the main region 42 and the sub-region 44, and the pixel electrode trunk 10 is disposed between the adjacent two sub-pixels 4, Pixel electrode branches 12 are respectively disposed on the main region 42 and the sub-region 44 of the two sub-pixels 4, and the pixel electrode branches 12 are electrically connected to the pixel electrode trunks 10, respectively.
  • the pixel electrode trunk 10 is located above the data line 6 and below the black matrix 2 between the two sub-pixels 4.
  • the width of the pixel electrode trunk 10 is smaller than the width of the black matrix 2 between the two sub-pixels 4, and therefore, the pixel electrode trunk 10 is located in the coverage area of the black matrix 2.
  • the pixel electrode trunk 10 and the pixel electrode branch 12 are made of indium tin oxide.
  • the pixel electrode branches 12 in the two main regions 42 of the two sub-pixels 4 collectively form an X shape, and the pixel electrode branches 12 are symmetrically distributed on both sides of the pixel electrode trunk 10, and the two main regions 42 Sharing the pixel electrode; two sub-regions 44 of the two sub-pixels 4
  • the pixel electrode branches 12 are collectively formed in an X shape, and the pixel electrode branches 12 are symmetrically distributed on both sides of the pixel trunk 10, and the two sub-regions 44 share the pixel electrode.
  • another embodiment of the present invention is different from the above embodiment in that: two main regions 42 of the two sub-pixels 4 and pixel electrode branches 12 in two sub-regions 44 form an X together.
  • the pixel electrode branches 12 are symmetrically distributed on both sides of the pixel trunk 10, and the two main regions 42 and the two sub-regions 44 share the pixel electrode.
  • the TFT array substrate and the color filter substrate are gradually displaced along the left and right sides in the horizontal direction based on the center of the panel, causing the pixel electrode trunk on the TFT array substrate. 10 a relative displacement occurs, but since the pixel electrode trunks 10, 10 are located above the data line 6 between the two sub-pixels 4, and below the black matrix 2 between the two sub-pixels 4, The width of the pixel electrode trunks 10, 10 is smaller than the width of the black matrix 2 between the two sub-pixels 4, so that the relatively displaced pixel electrode trunks 10, 10 are still located in the area covered by the black matrix 2, The influence of the electric field is extremely small, so that the curved liquid crystal panel is prevented from generating dark lines corresponding to the pixel electrode trunks 10, 10, so that the overall brightness of the curved liquid crystal display panel tends to be uniform, and the display quality is improved.
  • the TFT array substrate structure of the present invention can be applied to a vertical alignment type liquid crystal display panel, and the TFT array substrate structure of the present invention can also be applied to a curved liquid crystal display panel, and can also be used for a vertical alignment type curved liquid crystal display panel.
  • the TFT array substrate structure provided by the present invention is disposed in a black matrix covered region by placing the pixel electrode trunk above the data line so as to be relatively displaced during the bending of the liquid crystal display panel. Effectively improve the electrical characteristics, avoiding the appearance of dark lines, thereby improving the quality of the liquid crystal display panel.

Abstract

一种TFT阵列基板结构，包括对应黑色矩阵（2）设置的数个子像素（4），所述每一子像素（4）包括对应黑色矩阵（2）设置的主区域（42）与次区域（44），在子像素之间设有数据线（6），在主区域（42）与次区域（44）之间设有栅极扫描线（8），在两个子像素（4）之间设有像素电极主干（10），在该两个子像素（4）的主区域（42）与次区域（44）上分别设置像素电极分支（12），像素电极分支（12）分别电性连接像素电极主干（10）；该TFT阵列基板结构在液晶显示面板弯曲过程中发生相对位移时，像素电极主干（10）仍处于黑色矩（2）阵覆盖的区域内，对电场的影响极小，能有效提升电学特性，避免产生暗纹，从而提升了液晶显示面板的品质。

Description

TFT阵列基板结构
技术领域
本发明涉及液晶显示领域， 尤其涉及一种 TFT (Thin Film Transistor, 薄膜晶体管） 阵列基板结构。 背景技术
液晶显示装置 （Liquid Crystal Display, LCD) 具有机身薄、 省电、 无 辐射等众多优点， 得到了广泛的应用， 如移动电话、个人数字助理（PDA)、 数字相机、 计算机屏幕或笔记本电脑屏幕等。
通常液晶显示装置包括壳体、 设于壳体内的液晶显示面板及设于壳体 内的背光模组 （Backlight module：)。 如图 1所示， 现有的液晶显示面板包括 TFT阵列基板 100、 位于 TFT阵列基板 100上方并与之贴合设置的一彩膜 基板 （Color Filter, CF) 300、 设于阵列基板 100与彩膜基板 300之间的液 晶层（Liquid Crystal Layer) 500及密封胶框 700， 其工作原理是通过在 TFT 阵列基板 100、彩膜基板 300间施加驱动电压来控制液晶层 500的液晶分子 的旋转， 将背光模组的光线折射出来产生画面。
就目前主流市场上的液晶显示面板而言， 按照液晶分子排列方式的不 同可分为三大类， 分別是 TN (扭曲向列） /STN (超级扭曲向列）、 IPS (板 内切换） /FFS (边缘切换）及 VA (垂直配向）型。其中， VA (Vertical Alignment, 垂直配向） 型液晶显示器具有高对比度、 宽视角、 颜色表现好等优点。 但 由于 VA型显示器采用的是垂直转动型的液晶， 大视角下会存在色偏现象， 针对该现象， 目前的设计是将子像素区域划分为主 （main) 和次 （sub) 两 个区域来显示， 主区域和次区域液晶两侧所加电压不同使主区域和次区域 液晶偏转角不同， 从而解决色偏问题。 如图 2所示， 在 TFT阵列基板上对 应黑色矩阵 200设置的数个子像素 400，所述每一子像素 400对应黑色矩阵 200设置主区域 402与次区域 404， 在子像素 400之间设有数据线 600， 在 主区域 402与次区域 404之间设有栅极扫描线 (scan line)800，在子像素主区 域 402与次区域 404中间设置有平行于数据线 600的像素电极 900，该像素 电极包括主干 902与分支 904。
随着曲面液晶显示装置的出现， 需要对液晶显示面板进行弯曲， 使之 形成一定的孤度。 在弯曲过程中， 由于 TFT阵列基板、 彩膜基板以面板中 心为基准， 在水平方向上会沿左右两边逐渐产生相对位移， 引起 TFT阵列 基板的像素电极主干相对位移， 进而使得电场发生变化， 造成曲面液晶显 示装置对应像素电极主干附近的位置产生暗紋。 更为严重的问题是， 液晶 面板由弯曲引起的相对位移区域以面板中心为基准， 向左右两边逐渐扩大， 位移较大区域的亮度偏暗， 从而使得整块面板显示不良。 发明内容
本发明的目的在于提供一种 TFT阵列基板结构， 通过将像素电极主干 设置于数据线上， 应用于曲面液晶显示面板上能有效避免在显示过程中出 现暗紋、 亮度不均等现象， 提升显示效果。
为实现上述目的， 本发明提供一种 TFT阵列基板结构， 包括对应黑色 矩阵设置的数个子像素， 所述每一子像素包括对应黑色矩阵设置的主区域 与次区域， 在子像素之间设有数据线， 在主区域与次区域之间设有栅极扫 描线， 在相邻的两个子像素之间设有像素电极主干， 在该两个子像素的主 区域与次区域上分別设置像素电极分支， 所述像素电极分支分別电性连接 于像素电极主干。 所述像素电极主干位于所述数据线上方。
所述像素电极主干的宽度小于在所述两个子像素之间的黑色矩阵的宽 度。
所述两个子像素的两个主区域内的像素电极分支共同形成 X形。
所述两个子像素的两个次区域内的像素电极分支共同形成 X形。
所述两个子像素的两个主区域与两个次区域内的像素电极分支共同形 成 X形。
所述像素电极主干与像素电极分支由氧化铟锡制成。
所述 TFT阵列基板结构用于垂直配向型液晶显示面板。
所述 TFT阵列基板结构用于曲面液晶显示面板。
本发明还提供一种 TFT阵列基板结构， 包括对应黑色矩阵设置的数个 子像素， 所述每一子像素包括对应黑色矩阵设置的主区域与次区域， 在子 像素之间设有数据线， 在主区域与次区域之间设有栅极扫描线， 在相邻的 两个子像素之间设有像素电极主干， 在该两个子像素的主区域与次区域上 分別设置像素电极分支， 所述像素电极分支分別电性连接像素电极主干； 所述像素电极主干位于所述数据线上方；
所述像素电极主干的宽度小于在所述两个子像素之间的黑色矩阵的宽 度；
所述两个子像素的两个主区域与两个次区域内的像素电极分支共同形 成 X形；
所述像素电极主干与像素电极分支由氧化铟锡制成；
所述 TFT阵列基板结构用于垂直配向型液晶显示面板。
本发明提供的 TFT阵列基板结构， 通过将像素电极主干设于数据线上 方， 使其在面板弯曲过程中发生相对位移的情况下， 仍处于黑色矩阵覆盖 的区域内， 对电场的影响极小， 有效提升电学特性， 避免产生暗紋， 从而 提升了液晶显示面板的品质。 附图说明
下面结合附图， 通过对本发明的具体实施方式详细描述， 将使本发明 的技术方案及其它有益效果显而易见。
附图中，
图 1为现有的液晶显示面板的剖面示意图；
图 2为现有的 TFT阵列基板结构的俯视示意图；
图 3为本发明 TFT阵列基板结构的俯视示意图；
图 4为本发明 TFT阵列基板结构的另一实施例的俯视示意图。 具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果， 以下结合本发明 的优选实施例及其附图进行详细描述。
请参阅图 3， 本发明提供一种 TFT阵列基板结构， 包括： 对应彩膜基 板上的黑色矩阵 2设置的数个子像素 4，所述每一子像素 4包括对应黑色矩 阵 2设置的主区域 42与次区域 44， 在子像素之间设有数据线 6， 在主区域 42与次区域 44之间设有栅极扫描线 8， 在相邻两个子像素 4之间设有像素 电极主干 10， 在该两个子像素 4的主区域 42与次区域 44上分別设置像素 电极分支 12， 所述像素电极分支 12分別电性连接于像素电极主干 10。
所述像素电极主干 10位于所述数据线 6的上方， 且位于所述两个子像 素 4之间的黑色矩阵 2的下方。 所述像素电极主干 10的宽度小于在所述两 个子像素 4之间的黑色矩阵 2的宽度， 因此， 所述像素电极主干 10位于所 述黑色矩阵 2的覆盖区域内。 所述像素电极主干 10与像素电极分支 12由 氧化铟锡制成。
所述两个子像素 4的两个主区域 42内的像素电极分支 12共同形成 X 形， 且所述像素电极分支 12对称分布于所述像素电极主干 10的两侧， 所 述两个主区域 42共用该像素电极； 所述两个子像素 4的两个次区域 44内 的像素电极分支 12共同形成 X形， 且所述像素电极分支 12对称分布于所 述像素主干 10的两侧， 所述两个次区域 44共用该像素电极。
请参阅图 4， 为本发明的另一实施例， 与上述实施例的区別在于： 所述 两个子像素 4的两个主区域 42与两个次区域 44内的像素电极分支 12，共同 形成 X形， 所述像素电极分支 12，对称分布于所述像素主干 10，的两侧， 所 述两个主区域 42与两个次区域 44共用该像素电极。
在对液晶显示面板进行弯曲的过程中， 所述 TFT阵列基板及彩膜基板 以面板中心为基准， 在水平方向上会沿左右两边逐渐产生相对位移， 引起 TFT阵列基板上的像素电极主干 10、 10，发生相对位移， 但由于所述像素电 极主干 10、 10，位于所述两个子像素 4之间的数据线 6的上方， 且位于所述 两个子像素 4之间的黑色矩阵 2的下方， 所述像素电极主干 10、 10，的宽度 小于所述两个子像素 4之间的黑色矩阵 2的宽度， 使得相对位移后的像素 电极主干 10、 10，仍位于黑色矩阵 2覆盖的区域内， 对电场的影响极小， 从 而避免曲面液晶面板在对应所述像素电极主干 10、 10，处产生暗紋， 从而使 曲面液晶显示面板的整体亮度趋于一致， 提高显示质量。 因此， 可将本发 明 TFT阵列基板结构用于垂直配向型液晶显示面板， 也可将本发明 TFT阵 列基板结构用于曲面液晶显示面板， 还可用于垂直配向型曲面液晶显示面 板。
综上所述， 本发明提供的 TFT阵列基板结构， 通过将像素电极主干设 于数据线上方， 使其在液晶显示面板弯曲过程中发生相对位移的情况下， 仍处于黑色矩阵覆盖的区域内， 有效提升电学特性， 避免产生暗紋， 从而 提升了液晶显示面板的品质。
以上所述， 对于本领域的普通技术人员来说， 可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形， 而所有这些改变和变形 都应属于本发明权利要求的保护范围。

Claims

权 利 要 求
1、 一种 TFT阵列基板结构， 包括对应黑色矩阵设置的数个子像素， 所 述每一子像素包括对应黑色矩阵设置的主区域与次区域， 在子像素之间设 有数据线， 在主区域与次区域之间设有栅极扫描线， 在相邻的两个子像素 之间设有像素电极主干， 在该两个子像素的主区域与次区域上分別设置像 素电极分支， 所述像素电极分支分別电性连接像素电极主干。
2、如权利要求 1所述的 TFT阵列基板结构， 其中， 所述像素电极主干 位于所述数据线上方。
3、如权利要求 1所述的 TFT阵列基板结构， 其中， 所述像素电极主干 的宽度小于在所述两个子像素之间的黑色矩阵的宽度。
4、如权利要求 1所述的 TFT阵列基板结构， 其中， 所述两个子像素的 两个主区域内的像素电极分支共同形成 X形。
5、 如权利要求 1所述的 TFT阵列基板结构， 其中， 所述两个子像素的 两个次区域内的像素电极分支共同形成 X形。
6、如权利要求 1所述的 TFT阵列基板结构， 其中， 所述两个子像素的 两个主区域与两个次区域内的像素电极分支共同形成 X形。
7、如权利要求 1所述的 TFT阵列基板结构， 其中， 所述像素电极主干 与像素电极分支由氧化铟锡制成。
8、 如权利要求 1所述的 TFT阵列基板结构， 其中， 所述 TFT阵列基 板结构用于垂直配向型液晶显示面板。
9、 如权利要求 1所述的 TFT阵列基板结构， 其中， 所述 TFT阵列基 板结构用于曲面液晶显示面板。
10、 一种 TFT阵列基板结构， 包括对应黑色矩阵设置的数个子像素， 所述每一子像素包括对应黑色矩阵设置的主区域与次区域， 在子像素之间 设有数据线， 在主区域与次区域之间设有栅极扫描线， 在相邻的两个子像 素之间设有像素电极主干， 在该两个子像素的主区域与次区域上分別设置 像素电极分支， 所述像素电极分支分別电性连接像素电极主干；
其中， 所述像素电极主干位于所述数据线上方；
其中， 所述像素电极主干的宽度小于在所述两个子像素之间的黑色矩 阵的宽度；
其中， 所述两个子像素的两个主区域与两个次区域内的像素电极分支 共同形成 X形； 其中， 所述像素电极主干与像素电极分支由氧化铟锡制成； 其中， 所述 TFT阵列基板结构用于垂直配向型液晶显示面板。
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