WO2015186704A1 - Conductive paste, connected structure and method for producing connected structure - Google Patents

Conductive paste, connected structure and method for producing connected structure Download PDF

Info

Publication number
WO2015186704A1
WO2015186704A1 PCT/JP2015/065905 JP2015065905W WO2015186704A1 WO 2015186704 A1 WO2015186704 A1 WO 2015186704A1 JP 2015065905 W JP2015065905 W JP 2015065905W WO 2015186704 A1 WO2015186704 A1 WO 2015186704A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
conductive paste
solder
connection
target member
Prior art date
Application number
PCT/JP2015/065905
Other languages
French (fr)
Japanese (ja)
Inventor
敬士 久保田
石澤 英亮
Original Assignee
積水化学工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 積水化学工業株式会社 filed Critical 積水化学工業株式会社
Priority to KR1020167015288A priority Critical patent/KR102392995B1/en
Priority to JP2015528740A priority patent/JP5860191B1/en
Priority to CN201580004070.7A priority patent/CN105900180B/en
Publication of WO2015186704A1 publication Critical patent/WO2015186704A1/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/04Non-macromolecular additives inorganic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00Adhesives based on unspecified macromolecular compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02Electrically-conducting adhesives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/14Structural association of two or more printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/36Assembling printed circuits with other printed circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/115Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
    • H01L2224/1152Self-assembly, e.g. self-agglomeration of the bump material in a fluid
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector

Definitions

  • the present invention relates to a conductive paste containing solder particles.
  • the present invention also relates to a connection structure using the conductive paste and a method for manufacturing the connection structure.
  • Anisotropic conductive materials such as anisotropic conductive paste and anisotropic conductive film are widely known.
  • anisotropic conductive material conductive particles are dispersed in a binder resin.
  • the anisotropic conductive material may be connected between a flexible printed circuit board and a glass substrate (FOG (Film on Glass)), or connected between a semiconductor chip and a flexible printed circuit board (COF ( (Chip on Film)), connection between a semiconductor chip and a glass substrate (COG (Chip on Glass)), connection between a flexible printed circuit board and a glass epoxy substrate (FOB (Film on Board)), and the like.
  • FOG Glass
  • COF Chip on Film
  • an anisotropic conductive material containing conductive particles is disposed on the glass epoxy substrate. To do.
  • a flexible printed circuit board is laminated, and heated and pressurized. As a result, the anisotropic conductive material is cured, and the electrodes are electrically connected via the conductive particles to obtain a connection structure.
  • Patent Document 1 includes a resin layer containing a thermosetting resin, solder powder, and a curing agent, and the solder powder and the curing agent include the resin layer.
  • An adhesive tape present therein is disclosed. This adhesive tape is in the form of a film, not a paste.
  • Patent Document 1 discloses a bonding method using the above-mentioned adhesive tape. Specifically, a first substrate, an adhesive tape, a second substrate, an adhesive tape, and a third substrate are laminated in this order from the bottom to obtain a laminate. At this time, the first electrode provided on the surface of the first substrate is opposed to the second electrode provided on the surface of the second substrate. Moreover, the 2nd electrode provided in the surface of the 2nd board
  • the adhesive tape described in Patent Document 1 is a film, not a paste. For this reason, it is difficult to efficiently arrange the solder powder on the electrodes (lines). For example, in the adhesive tape described in Patent Document 1, a part of the solder powder is easily placed in a region (space) where no electrode is formed. Solder powder disposed in a region where no electrode is formed does not contribute to conduction between the electrodes.
  • the solder powder may not be efficiently disposed on the electrodes (lines).
  • An object of the present invention is to provide a conductive paste that can efficiently arrange solder particles on electrodes and can improve conduction reliability between the electrodes. Moreover, this invention is providing the manufacturing method of the connection structure and connection structure using the said electrically conductive paste.
  • the solder includes a thermosetting component, a flux, and a plurality of solder particles, and the viscosity at the melting point of the flux is 0.1 Pa ⁇ s or more and 3 Pa ⁇ s or less.
  • a conductive paste is provided in which the viscosity at the melting point of the particles is 0.1 Pa ⁇ s or more and 5 Pa ⁇ s or less.
  • the melting point of the flux is 80 ° C. or more and 190 ° C. or less, and in another specific aspect, the melting point of the flux is 100 ° C. or more and 190 ° C. or less.
  • the content of the flux is 0.1 wt% or more and 5 wt% or less in 100 wt% of the conductive paste.
  • the conductive paste does not contain a filler or contains a filler in less than 0.25% by weight in 100% by weight of the conductive paste.
  • the solder particles are surface-treated so that carboxyl groups exist on the outer surface.
  • the melting point of the flux is higher than the melting point of the solder particles.
  • a first connection target member having at least one first electrode on the surface
  • a second connection target member having at least one second electrode on the surface
  • the connection part is formed of the above-described conductive paste
  • the first electrode and the second electrode A connection structure is provided in which an electrode is electrically connected by a solder portion in the connection portion.
  • the first connection target member and the second connection target member are disposed so as to face each other, and by heating the conductive paste to a temperature equal to or higher than the melting point of the solder particles and equal to or higher than the curing temperature of the thermosetting component.
  • a step of electrically connecting the first electrode and the second electrode with a solder portion in the connection portion How to manufacture connection structures There is provided.
  • connection portion in the step of arranging the second connection target member and the step of forming the connection portion, no pressure is applied, and the conductive paste includes The weight of the second connection target member is added.
  • the second connection target member is a resin film, a flexible printed board, a rigid flexible board, or a flexible flat cable.
  • the conductive paste according to the present invention includes a thermosetting component, a flux, and a plurality of solder particles, and the viscosity at the melting point of the flux is 0.1 Pa ⁇ s or more and 3 Pa ⁇ s or less. Since the viscosity at the melting point is 0.1 Pa ⁇ s or more and 5 Pa ⁇ s or less, when the electrodes are electrically connected, the solder particles can be efficiently disposed on the electrodes. The conduction reliability can be increased.
  • FIG. 1 is a partially cutaway front sectional view schematically showing a connection structure obtained using a conductive paste according to an embodiment of the present invention.
  • FIGS. 2A to 2C are diagrams for explaining each step of an example of a method of manufacturing a connection structure using the conductive paste according to the embodiment of the present invention.
  • FIG. 3 is a partially cutaway front sectional view showing a modified example of the connection structure.
  • FIGS. 4A, 4B, and 4C are images showing an example of a connection structure using a conductive paste that is not included in the embodiment of the present invention.
  • FIGS. 4A and 4B are images.
  • FIG. 4C is a cross-sectional image
  • FIG. 4C is a planar image.
  • the conductive paste according to the present invention includes a thermosetting component, a flux, and a plurality of solder particles.
  • the viscosity at the melting point of the flux is 0.1 Pa ⁇ s or more and 3 Pa ⁇ s or less.
  • the solder particles have a viscosity at the melting point of 0.1 Pa ⁇ s to 5 Pa ⁇ s.
  • the conductive paste according to the present invention since the above-described configuration is adopted, when the electrodes are electrically connected, a plurality of solder particles are easily collected between the electrodes, and the plurality of solder particles are placed on the electrodes (lines). Can be arranged efficiently. Moreover, it is difficult for some of the plurality of solder particles to be disposed in a region (space) where no electrode is formed, and the amount of solder particles disposed in a region where no electrode is formed can be considerably reduced. Therefore, the conduction reliability between the electrodes can be improved. In addition, it is possible to prevent electrical connection between laterally adjacent electrodes that should not be connected, and to improve insulation reliability.
  • the conductive paste according to the present invention can be suitably used for the following manufacturing method of the connection structure according to the present invention.
  • a conductive paste, a first connection target member, and a second connection target member are used.
  • the conductive material used in the method for manufacturing a connection structure according to the present invention is not a conductive film but a conductive paste.
  • the conductive paste includes a thermosetting component, a flux, and a plurality of solder particles.
  • the first connection target member has at least one first electrode on the surface.
  • the second connection target member has at least one second electrode on the surface.
  • the step of disposing the conductive paste according to the present invention on the surface of the first connection target member, and the first connection target member side of the conductive paste include: On the opposite surface, the step of disposing the second connection object member so that the first electrode and the second electrode face each other, the melting point of the solder particles or higher, and the thermosetting component By heating the conductive paste above the curing temperature, a connection portion connecting the first connection target member and the second connection target member is formed by the conductive paste, and the first And electrically connecting the second electrode and the second electrode with a solder portion in the connection portion.
  • connection structure in the step of arranging the second connection target member and the step of forming the connection portion, no pressure is applied, and the second connection is applied to the conductive paste.
  • the weight of the target member is preferably added.
  • the conductive paste in the step of arranging the second connection target member and the step of forming the connection portion, has a weight force of the second connection target member. It is preferable not to apply a pressure higher than.
  • the plurality of solder particles are easily collected between the first electrode and the second electrode, and the plurality of solder particles are collected on the electrode ( Line). Moreover, it is difficult for some of the plurality of solder particles to be disposed in a region (space) where no electrode is formed, and the amount of solder particles disposed in a region where no electrode is formed can be considerably reduced. Therefore, the conduction reliability between the first electrode and the second electrode can be improved. In addition, it is possible to prevent electrical connection between laterally adjacent electrodes that should not be connected, and to improve insulation reliability.
  • a conductive paste is used instead of a conductive film. The inventors have found that they need to be used.
  • conductive particles having base material particles and a solder layer disposed on the surface of the base material particles are known as particles different from the solder particles. Compared to the case where such conductive particles are used, when solder particles are used, the melting point of the flux and the melting point of the solder particles are in a specific range, so that the solder particles are arranged on the electrodes. The effect of improving accuracy is increased.
  • the connection portion is Solder particles arranged in a region (space) where no electrode is formed before being formed are more easily collected between the first electrode and the second electrode, and a plurality of solder particles are separated into electrodes (lines).
  • the inventors have also found that they can be arranged efficiently above.
  • a configuration in which a conductive paste is used instead of a conductive film and a configuration in which the weight of the second connection target member is added to the conductive paste without applying pressure are used in combination. This has a great meaning in order to obtain the effects of the present invention at a higher level.
  • WO2008 / 023452A1 describes that it is preferable to pressurize with a predetermined pressure at the time of bonding from the viewpoint of efficiently moving the solder powder to the electrode surface, and the pressurizing pressure further ensures the solder area.
  • the pressure is set to 0 MPa or more, preferably 1 MPa or more.
  • a predetermined pressure may be applied to the adhesive tape by its own weight.
  • the pressure applied intentionally to the adhesive tape may be 0 MPa, but there is no difference between the effect when the pressure exceeding 0 MPa is applied and when the pressure is set to 0 MPa. Not listed.
  • the thickness of the connecting portion can be adjusted as appropriate depending on the amount of the conductive paste applied.
  • the conductive film in order to change or adjust the thickness of the connection portion, it is necessary to prepare a conductive film having a different thickness or to prepare a conductive film having a predetermined thickness. There is.
  • FIG. 1 schematically shows a connection structure obtained by using a conductive paste according to an embodiment of the present invention in a partially cutaway front sectional view.
  • connection structure 1 shown in FIG. 1 is a connection that connects a first connection target member 2, a second connection target member 3, and the first connection target member 2 and the second connection target member 3.
  • Part 4 The connection portion 4 is formed of a conductive paste containing a thermosetting component, a flux, and a plurality of solder particles. In this conductive paste, the viscosity at the melting point of the flux and the viscosity at the melting point of the solder particles are within a specific range.
  • the connecting portion 4 includes a solder portion 4A in which a plurality of solder particles are gathered and joined to each other, and a cured product portion 4B in which a thermosetting component is thermally cured.
  • the first connection object member 2 has a plurality of first electrodes 2a on the surface (upper surface).
  • the second connection target member 3 has a plurality of second electrodes 3a on the surface (lower surface).
  • the first electrode 2a and the second electrode 3a are electrically connected by the solder portion 4A. Therefore, the first connection target member 2 and the second connection target member 3 are electrically connected by the solder portion 4A.
  • no solder exists in a region (cured product portion 4B portion) different from the solder portion 4A gathered between the first electrode 2a and the second electrode 3a.
  • connection structure 1 As shown in FIG. 1, in the connection structure 1, after a plurality of solder particles are melted, the molten solder particles are wetted and spread on the surface of the electrode to solidify to form a solder portion 4 ⁇ / b> A. For this reason, the connection area of 4 A of solder parts and the 1st electrode 2a, and 4 A of solder parts, and the 2nd electrode 3a becomes large. That is, by using the solder particles, the solder portion 4A, the first electrode 2a, and the solder portion are compared with the case where the conductive outer surface is made of a metal such as nickel, gold or copper. The contact area between 4A and the second electrode 3a increases. For this reason, the conduction
  • connection structure 1 shown in FIG. 1 all of the solder portions 4A are located in the facing region between the first and second electrodes 2a and 3a.
  • the connection structure 1X of the modification shown in FIG. 3 is different from the connection structure 1 shown in FIG. 1 only in the connection portion 4X.
  • the connection part 4X has the solder part 4XA and the hardened
  • most of the solder portions 4XA are located in regions where the first and second electrodes 2a and 3a are opposed to each other, and a part of the solder portion 4XA is first and second. You may protrude to the side from the area
  • the solder part 4XA protruding laterally from the region where the first and second electrodes 2a and 3a are opposed is a part of the solder part 4XA and is not a solder separated from the solder part 4XA.
  • the amount of solder away from the solder portion can be reduced, but the solder away from the solder portion may exist in the cured product portion.
  • connection structure 1 If the amount of solder particles used is reduced, the connection structure 1 can be easily obtained. If the amount of the solder particles used is increased, it becomes easy to obtain the connection structure 1X.
  • connection structure 1 using the conductive paste according to the embodiment of the present invention will be described.
  • the first connection target member 2 having the first electrode 2a on the surface (upper surface) is prepared.
  • a conductive paste 11 including a thermosetting component 11B, a plurality of solder particles 11A, and a flux is disposed on the surface of the first connection target member 2 ( First step).
  • the conductive paste 11 is disposed on the surface of the first connection target member 2 on which the first electrode 2a is provided.
  • the solder particles 11A are disposed both on the first electrode 2a (line) and on a region (space) where the first electrode 2a is not formed.
  • the arrangement method of the conductive paste 11 is not particularly limited, and examples thereof include application with a dispenser, screen printing, and ejection with an inkjet device.
  • the 2nd connection object member 3 which has the 2nd electrode 3a on the surface (lower surface) is prepared.
  • the 2nd connection object member 3 is arrange
  • the second connection target member 3 is disposed from the second electrode 3a side. At this time, the first electrode 2a and the second electrode 3a are opposed to each other.
  • the conductive paste 11 is heated above the melting point of the solder particles 11A and above the curing temperature of the thermosetting component 11B (third step). That is, the conductive paste 11 is heated to a temperature lower than the melting point of the solder particles 11A and the curing temperature of the thermosetting component 11B. At the time of this heating, the solder particles 11A that existed in the region where no electrode is formed gather between the first electrode 2a and the second electrode 3a (self-aggregation effect). In this embodiment, since the conductive paste is used instead of the conductive film, the solder particles 11A are effectively collected between the first electrode 2a and the second electrode 3a. Also, the solder particles 11A are melted and joined together. Further, the thermosetting component 11B is thermoset.
  • connection portion 4 connecting the first connection target member 2 and the second connection target member 3 is formed with the conductive paste 11.
  • the connection part 4 is formed by the conductive paste 11
  • the solder part 4A is formed by joining a plurality of solder particles 11A
  • the cured part 4B is formed by thermosetting the thermosetting component 11B. Since the solder particles 11A move quickly, the first electrode 2a and the second electrode are moved after the movement of the solder particles 11A not located between the first electrode 2a and the second electrode 3a starts. It is not necessary to keep the temperature constant until the movement of the solder particles 11A is completed.
  • connection structure 1 shown in FIG. 1 is obtained.
  • the second step and the third step may be performed continuously.
  • the laminated body of the obtained 1st connection object member 2, the electrically conductive paste 11, and the 2nd connection object member 3 is moved to a heating part, and said 3rd said You may perform a process.
  • the laminate In order to perform the heating, the laminate may be disposed on a heating member, or the laminate may be disposed in a heated space.
  • the heating temperature in the third step is not particularly limited as long as it is higher than the melting point of the solder particles and higher than the curing temperature of the thermosetting component.
  • the heating temperature is preferably 130 ° C. or higher, more preferably 160 ° C. or higher, preferably 450 ° C. or lower, more preferably 250 ° C. or lower, and still more preferably 200 ° C. or lower.
  • the said 1st connection object member should just have at least 1 1st electrode.
  • the first connection target member preferably has a plurality of first electrodes.
  • the said 2nd connection object member should just have at least 1 2nd electrode.
  • the second connection target member preferably has a plurality of second electrodes.
  • the first and second connection target members are not particularly limited. Specific examples of the first and second connection target members include electronic components such as semiconductor chips, capacitors, and diodes, and resin films, printed boards, flexible printed boards, flexible flat cables, rigid flexible boards, glass epoxies. Examples thereof include electronic components such as circuit boards such as substrates and glass substrates.
  • the first and second connection target members are preferably electronic components.
  • At least one of the first connection target member and the second connection target member is a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board.
  • the second connection target member is preferably a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board. Resin films, flexible printed boards, flexible flat cables, and rigid flexible boards have the property of being highly flexible and relatively lightweight. When a conductive film is used for connection of such a connection object member, there exists a tendency for a solder particle not to gather on an electrode.
  • the conductive paste according to the present invention is used, even if a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board is used, the solder particles can be efficiently collected on the electrode. And the reliability of conduction between the electrodes can be sufficiently enhanced.
  • the reliability of conduction between electrodes by not applying pressure compared to the case of using other connection target members such as a semiconductor chip. The improvement effect can be obtained more effectively.
  • the electrode provided on the connection target member examples include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a silver electrode, a molybdenum electrode, a SUS electrode, and a tungsten electrode.
  • the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, a silver electrode, or a copper electrode.
  • the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, or a tungsten electrode.
  • the electrode formed only with aluminum may be sufficient and the electrode by which the aluminum layer was laminated
  • the material for the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element.
  • the trivalent metal element include Sn, Al, and Ga.
  • the distance D1 of the connecting portion at the position where the first electrode and the second electrode face each other is preferably 5 ⁇ m or more, more preferably 20 ⁇ m or more, preferably 50 ⁇ m or less, more preferably 75 ⁇ m or less.
  • the distance D1 is equal to or greater than the lower limit, the connection reliability between the connection portion and the connection target member is further increased.
  • the distance D1 is less than or equal to the above upper limit, solder particles are more likely to gather on the electrodes when the connection portion is formed, and the conduction reliability between the electrodes is further enhanced.
  • the viscosity ⁇ 1 at 25 ° C. of the conductive paste is preferably 10 Pa ⁇ s or more, more preferably 50 Pa ⁇ s or more, and further preferably 100 Pa ⁇ s or more, preferably Is 800 Pa ⁇ s or less, more preferably 600 Pa ⁇ s or less, and still more preferably 500 Pa ⁇ s or less.
  • the viscosity can be appropriately adjusted depending on the type and amount of the compounding component. Further, the use of a filler can make the viscosity relatively high. However, since the filler may inhibit the movement of the solder particles, the filler content is preferably small.
  • the viscosity ⁇ 2 at the melting point of the flux of the conductive paste is 0.1 Pa ⁇ s or more and 3 Pa ⁇ s or less. From the viewpoint of more efficiently arranging the solder particles on the electrode, the viscosity ⁇ 2 is preferably 0.15 Pa ⁇ s or more, more preferably 0.2 Pa ⁇ s or more, preferably 2 Pa ⁇ s or less, more preferably 1 Pa ⁇ s or less.
  • the viscosity ⁇ 3 at the melting point of the solder particles of the conductive paste is 0.1 Pa ⁇ s or more and 5 Pa ⁇ s or less. From the viewpoint of more efficiently arranging the solder particles on the electrode, the viscosity ⁇ 3 is preferably 0.15 Pa ⁇ s or more, more preferably 0.2 Pa ⁇ s or more, preferably 3 Pa ⁇ s or less, more preferably 1 Pa ⁇ s or less.
  • the ratio of the viscosity ⁇ 1 to the viscosity ⁇ 2 is preferably 15 or more, more preferably 50 or more, preferably 3000 or less, more preferably Is 2500 or less.
  • the ratio of the viscosity ⁇ 1 to the viscosity ⁇ 3 is preferably 10 or more, more preferably 40 or more, preferably 2500 or less, more preferably Is 2000 or less.
  • the ratio of the viscosity ⁇ 2 to the viscosity ⁇ 3 is preferably 0.1 or more, more preferably 0.3 or more, preferably 10 Below, more preferably 1 or less.
  • the viscosity can be measured under conditions of 25 ° C. and 5 rpm using, for example, an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.).
  • the conductive paste includes a thermosetting component, a flux, and a plurality of solder particles.
  • the thermosetting component preferably includes a curable compound (thermosetting compound) that can be cured by heating, and a thermosetting agent.
  • solder particles have solder on a conductive outer surface.
  • both a center part and an electroconductive outer surface are formed with the solder.
  • the solder particles are preferably surface-treated so that carboxyl groups exist on the outer surface.
  • the solder particles are preferably blended into the conductive paste after being surface-treated so that carboxyl groups exist on the outer surface.
  • the solder is preferably a metal (low melting point metal) having a melting point of 450 ° C. or lower.
  • the solder particles are preferably metal particles (low melting point metal particles) having a melting point of 450 ° C. or lower.
  • the low melting point metal particles are particles containing a low melting point metal.
  • the low melting point metal is a metal having a melting point of 450 ° C. or lower.
  • the melting point of the low melting point metal is preferably 300 ° C. or lower, more preferably 160 ° C. or lower.
  • the solder particles include tin.
  • the content of tin is preferably 30% by weight or more, more preferably 40% by weight or more, still more preferably 70% by weight or more, and particularly preferably 90% by weight or more.
  • the content of tin in the solder particles is equal to or higher than the lower limit, the connection reliability between the solder portion and the electrode is further enhanced.
  • the tin content is determined using a high-frequency inductively coupled plasma emission spectrometer (“ICP-AES” manufactured by Horiba, Ltd.) or a fluorescent X-ray analyzer (“EDX-800HS” manufactured by Shimadzu). It can be measured.
  • ICP-AES high-frequency inductively coupled plasma emission spectrometer
  • EDX-800HS fluorescent X-ray analyzer
  • solder particles By using the above solder particles, the solder is melted and joined to the electrodes, and the solder portion conducts between the electrodes. For example, since the solder portion and the electrode are not in point contact but in surface contact, the connection resistance is lowered. In addition, the use of solder particles increases the bonding strength between the solder portion and the electrode. As a result, peeling between the solder portion and the electrode is further less likely to occur, and the conduction reliability and the connection reliability are effectively increased.
  • the low melting point metal constituting the solder particles is not particularly limited.
  • the low melting point metal is preferably tin or an alloy containing tin.
  • the alloy include a tin-silver alloy, a tin-copper alloy, a tin-silver-copper alloy, a tin-bismuth alloy, a tin-zinc alloy, and a tin-indium alloy.
  • the low melting point metal is preferably tin, a tin-silver alloy, a tin-silver-copper alloy, a tin-bismuth alloy, or a tin-indium alloy because of its excellent wettability with respect to the electrode. More preferred are a tin-bismuth alloy and a tin-indium alloy.
  • the solder particles are preferably a filler material having a liquidus line of 450 ° C. or lower based on JIS Z3001: Welding terms.
  • the composition of the solder particles include metal compositions containing zinc, gold, silver, lead, copper, tin, bismuth, indium and the like. Of these, a tin-indium system (117 ° C. eutectic) or a tin-bismuth system (139 ° C. eutectic) which is low-melting and lead-free is preferable. That is, the solder particles preferably do not contain lead, and preferably contain tin and indium, or contain tin and bismuth.
  • the solder particles include nickel, copper, antimony, aluminum, zinc, iron, gold, titanium, phosphorus, germanium, tellurium, cobalt, bismuth, manganese, chromium. Further, it may contain a metal such as molybdenum and palladium. Moreover, from the viewpoint of further increasing the bonding strength between the solder portion and the electrode, the solder particles preferably contain nickel, copper, antimony, aluminum, or zinc. From the viewpoint of further increasing the bonding strength between the solder part and the electrode, the content of these metals for increasing the bonding strength is preferably 0.0001% by weight or more, preferably 1% by weight in 100% by weight of the solder particles. % Or less.
  • the average particle diameter of the solder particles is preferably 0.5 ⁇ m or more, more preferably 1 ⁇ m or more, still more preferably 3 ⁇ m or more, particularly preferably 5 ⁇ m or more, preferably 100 ⁇ m or less, more preferably 40 ⁇ m or less, and even more preferably 30 ⁇ m.
  • it is more preferably 20 ⁇ m or less, particularly preferably 15 ⁇ m or less, and most preferably 10 ⁇ m or less.
  • the average particle diameter of the solder particles is particularly preferably 3 ⁇ m or more and 30 ⁇ m or less.
  • the average particle diameter” of the solder particles indicates the number average particle diameter.
  • the average particle diameter of the solder particles is obtained, for example, by observing 50 arbitrary solder particles with an electron microscope or an optical microscope and calculating an average value.
  • the content of the solder particles in 100% by weight of the conductive paste is preferably 1% by weight or more, more preferably 2% by weight or more, still more preferably 10% by weight or more, particularly preferably 20% by weight or more, and most preferably 30%. % By weight or more, preferably 80% by weight or less, more preferably 60% by weight or less, and still more preferably 50% by weight or less.
  • the content of the solder particles is not less than the above lower limit and not more than the above upper limit, it is possible to more efficiently arrange the solder particles on the electrodes, and it is easy to arrange many solder particles between the electrodes, The conduction reliability is further increased. From the viewpoint of further improving the conduction reliability, it is preferable that the content of the solder particles is large.
  • thermosetting component examples include oxetane compounds, epoxy compounds, episulfide compounds, (meth) acrylic compounds, phenolic compounds, amino compounds, unsaturated polyester compounds, polyurethane compounds, silicone compounds, and polyimide compounds.
  • an epoxy compound is preferable from the viewpoint of further improving the curability and viscosity of the conductive paste and further improving the connection reliability.
  • thermosetting compound is preferably dispersed in the form of particles.
  • the content of the thermosetting compound is preferably 20% by weight or more, more preferably 40% by weight or more, still more preferably 50% by weight or more, and preferably 99% by weight or less. Is 98% by weight or less, more preferably 90% by weight or less, and particularly preferably 80% by weight or less. From the viewpoint of further improving the impact resistance, it is preferable that the content of the thermosetting component is large.
  • thermosetting agent thermosetting component
  • the thermosetting agent thermosets the thermosetting compound.
  • examples of the thermosetting agent include an imidazole curing agent, an amine curing agent, a phenol curing agent, a polythiol curing agent, an acid anhydride, a thermal cation initiator, and a thermal radical generator.
  • the said thermosetting agent only 1 type may be used and 2 or more types may be used together.
  • an imidazole curing agent, a polythiol curing agent, or an amine curing agent is preferable because the conductive paste can be cured more rapidly at a low temperature.
  • a latent curing agent is preferable.
  • the latent curing agent is preferably a latent imidazole curing agent, a latent polythiol curing agent or a latent amine curing agent.
  • the said thermosetting agent may be coat
  • the imidazole curing agent is not particularly limited, and 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4-Diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine and 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s- Examples include triazine isocyanuric acid adducts.
  • the polythiol curing agent is not particularly limited, but is trimethylolpropane tris-3-mercaptopropionate, pentaerythritol tetrakis (3-mercaptobutyrate), pentaerythritol tetrakis-3-mercaptopropionate and dipentaerythritol hexa. -3-Mercaptopropionate and the like.
  • the solubility parameter of the polythiol curing agent is preferably 9.5 or more, and preferably 12 or less.
  • the solubility parameter is calculated by the Fedors method.
  • the solubility parameter of trimethylolpropane tris-3-mercaptopropionate is 9.6, and the solubility parameter of dipentaerythritol hexa-3-mercaptopropionate is 11.4.
  • the amine curing agent is not particularly limited, and hexamethylenediamine, octamethylenediamine, decamethylenediamine, 3,9-bis (3-aminopropyl) -2,4,8,10-tetraspiro [5.5].
  • examples include undecane, bis (4-aminocyclohexyl) methane, metaphenylenediamine, and diaminodiphenylsulfone.
  • thermal cation curing agent examples include iodonium cation curing agents, oxonium cation curing agents, and sulfonium cation curing agents.
  • examples of the iodonium-based cationic curing agent include bis (4-tert-butylphenyl) iodonium hexafluorophosphate.
  • examples of the oxonium-based cationic curing agent include trimethyloxonium tetrafluoroborate.
  • the sulfonium-based cationic curing agent examples include tri-p-tolylsulfonium hexafluorophosphate.
  • the thermal radical generator is not particularly limited, and examples thereof include azo compounds and organic peroxides.
  • examples of the azo compound include azobisisobutyronitrile (AIBN).
  • examples of the organic peroxide include di-tert-butyl peroxide and methyl ethyl ketone peroxide.
  • the reaction initiation temperature of the thermosetting agent is preferably 50 ° C or higher, more preferably 70 ° C or higher, still more preferably 80 ° C or higher, preferably 250 ° C or lower, more preferably 200 ° C or lower, still more preferably 150 ° C or lower, Especially preferably, it is 140 degrees C or less.
  • the reaction start temperature of the thermosetting agent is not less than the above lower limit and not more than the above upper limit, the solder particles are more efficiently arranged on the electrode.
  • the reaction initiation temperature of the thermosetting agent is particularly preferably 80 ° C. or higher and 140 ° C. or lower.
  • the reaction initiation temperature of the thermosetting agent is preferably lower than the melting point of the solder in the solder particles, more preferably 5 ° C. or more, and more preferably 10 It is more preferable that the temperature is lower by at least ° C.
  • the reaction start temperature of the thermosetting agent means the temperature at which the exothermic peak of DSC starts to rise.
  • the content of the thermosetting agent is not particularly limited.
  • the content of the thermosetting agent is preferably 0.01 parts by weight or more, more preferably 1 part by weight or more, preferably 200 parts by weight or less, more preferably 100 parts by weight with respect to 100 parts by weight of the thermosetting compound. Part or less, more preferably 75 parts by weight or less.
  • the content of the thermosetting agent is at least the above lower limit, it is easy to sufficiently cure the conductive paste.
  • the content of the thermosetting agent is not more than the above upper limit, it is difficult for an excess thermosetting agent that did not participate in curing after curing to remain, and the heat resistance of the cured product is further enhanced.
  • the conductive paste contains a flux.
  • the flux is not particularly limited.
  • a flux generally used for soldering or the like can be used.
  • the flux include zinc chloride, a mixture of zinc chloride and an inorganic halide, a mixture of zinc chloride and an inorganic acid, a molten salt, phosphoric acid, a derivative of phosphoric acid, an organic halide, hydrazine, an organic acid, and pine resin.
  • Etc As for the said flux, only 1 type may be used and 2 or more types may be used together.
  • Examples of the molten salt include ammonium chloride.
  • Examples of the organic acid include lactic acid, citric acid, stearic acid, glutamic acid, and glutaric acid.
  • Examples of the pine resin include activated pine resin and non-activated pine resin.
  • the flux is preferably an organic acid having two or more carboxyl groups, pine resin.
  • the flux may be an organic acid having two or more carboxyl groups, or pine resin.
  • the above rosins are rosins whose main component is abietic acid.
  • the flux is preferably rosins, and more preferably abietic acid. By using this preferable flux, the conduction reliability between the electrodes is further enhanced.
  • the active temperature (melting point) of the flux is preferably 50 ° C. or higher, more preferably 70 ° C. or higher, still more preferably 80 ° C. or higher, particularly preferably 100 ° C. or higher, preferably 200 ° C. or lower, more preferably 190 ° C. or lower. More preferably, it is 160 ° C. or less, more preferably 150 ° C. or less, and still more preferably 140 ° C. or less.
  • the activation temperature of the flux is not less than the above lower limit and not more than the above upper limit, the flux effect is more effectively exhibited, and the solder particles are more efficiently arranged on the electrode. As a result, the connection resistance between the electrodes is reduced, and the connection reliability is also increased.
  • the active temperature (melting point) of the flux is preferably 80 ° C. or higher and 190 ° C. or lower, and more preferably 100 ° C. or higher and 190 ° C. or lower.
  • the activation temperature of the flux is particularly preferably 80 ° C. or higher and 140 ° C. or lower, and more preferably 100 ° C. or higher and 140 ° C. or lower.
  • Examples of the flux having a melting point of 80 ° C. or higher and 190 ° C. or lower include succinic acid (melting point 186 ° C.), glutaric acid (melting point 96 ° C.), adipic acid (melting point 152 ° C.), pimelic acid (melting point 104 ° C.), suberic acid
  • Examples thereof include dicarboxylic acids such as (melting point 142 ° C.), benzoic acid (melting point 122 ° C.), and malic acid (melting point 130 ° C.).
  • the boiling point of the flux is preferably 200 ° C. or lower.
  • the melting point of the flux is preferably higher than the melting point of the solder in the solder particles, preferably 5 ° C or higher, more preferably 10 ° C or higher. Is more preferable.
  • the melting point of the flux is preferably higher than the reaction start temperature of the thermosetting agent, more preferably 5 ° C or higher, more preferably 10 ° C or higher. More preferably.
  • the flux may be dispersed in the conductive paste or may be adhered on the surface of the solder particles.
  • the solder particles can be efficiently aggregated on the electrode portion. This is because, when heat is applied at the time of joining, when the electrode formed on the connection target member is compared with the portion of the connection target member around the electrode, the thermal conductivity of the electrode portion is that of the connection target member portion around the electrode. Due to the fact that it is higher than the heat traditional rate, it is caused by the rapid temperature rise of the electrode part. At the stage where the melting point of the solder particles is exceeded, the inside of the solder particles dissolves, but the oxide film formed on the surface does not reach the melting point (activation temperature) of the flux and is not removed.
  • the flux is preferably a flux that releases cations by heating.
  • a flux that releases cations upon heating the solder particles can be arranged more efficiently on the electrode.
  • thermal cation curing agent can be used as the flux that releases cations by heating.
  • the content of the flux is preferably 0.5% by weight or more, preferably 30% by weight or less, more preferably 25% by weight or less.
  • the conductive paste may not contain a flux.
  • the flux content is not less than the above lower limit and not more than the above upper limit, it becomes more difficult to form an oxide film on the surface of the solder and the electrode, and the oxide film formed on the surface of the solder and the electrode is more effective. Can be removed.
  • a filler may be added to the conductive paste.
  • the filler may be an organic filler or an inorganic filler. However, since the filler may inhibit the movement of the solder particles, the filler content is preferably small.
  • the conductive paste does not contain a filler or contains a filler in less than 5% by weight in 100% by weight of the conductive paste.
  • the content of the filler is preferably 0% by weight (not contained) or more, preferably 5% by weight or less, more preferably 2% by weight or less, still more preferably 1% by weight or less, even more.
  • it is less than 0.25 wt%, particularly preferably 0.1 wt% or less.
  • the conductive paste does not contain a filler or contains less than 0.25% by weight of filler in 100% by weight of the conductive paste, and most preferably the conductive paste does not contain a filler. If the filler content is less than 0.25% by weight, the solder particle migration inhibition by the filler is sufficiently small, and if the filler content is 0.1% by weight or less, the solder particle migration inhibition by the filler is inhibited. Pretty small.
  • the conductive paste is, for example, a filler, an extender, a softener, a plasticizer, a polymerization catalyst, a curing catalyst, a colorant, an antioxidant, a heat stabilizer, a light stabilizer, an ultraviolet absorber, and a lubricant.
  • various additives such as an antistatic agent and a flame retardant may be included.
  • Polymer A Synthesis of reaction product (polymer A) of bisphenol F with 1,6-hexanediol diglycidyl ether and bisphenol F type epoxy resin: 72 parts by weight of bisphenol F (containing 4,4′-methylene bisphenol, 2,4′-methylene bisphenol and 2,2′-methylene bisphenol in a weight ratio of 2: 3: 1), 1,6-hexanediol 70 parts by weight of glycidyl ether and 30 parts by weight of bisphenol F type epoxy resin (“EPICLON EXA-830CRP” manufactured by DIC) were placed in a three-necked flask and dissolved at 150 ° C. under a nitrogen flow.
  • bisphenol F type epoxy resin (“EPICLON EXA-830CRP” manufactured by DIC)
  • the reaction product (Polymer A) contains a hydroxyl group derived from bisphenol F, 1,6-hexanediol diglycidyl ether, and an epoxy group of bisphenol F type epoxy resin. It was confirmed that it has a structural unit bonded to the main chain and has an epoxy group at both ends.
  • the weight average molecular weight of the reaction product (polymer A) obtained by GPC was 10,000, and the number average molecular weight was 3,500.
  • Polymer B both ends epoxy group rigid skeleton phenoxy resin, “YX6900BH45” manufactured by Mitsubishi Chemical Corporation, weight average molecular weight 16000
  • Thermosetting compound 1 Resorcinol type epoxy compound, “EX-201” manufactured by Nagase ChemteX Corporation, washed after crystallization at low temperature
  • Thermosetting compound 2 Bisphenol F type epoxy resin, “EPICLON EXA-830CRP” manufactured by DIC, used after being crystallized at low temperature
  • Thermosetting agent 1 Pentaerythritol tetrakis (3-mercaptobutyrate), “Karenz MT PE1” manufactured by Showa Denko KK
  • Latent epoxy thermosetting agent 1 T & K TOKA's “Fujicure 7000”
  • Flux 1 Adipic acid, manufactured by Wako Pure Chemical Industries, Ltd., melting point (activation temperature) 152 ° C.
  • Flux 2 Succinic acid, manufactured by Wako Pure Chemical Industries, Ltd., melting point (active temperature) 186 ° C.
  • Flux 3 Abietic acid, manufactured by Wako Pure Chemical Industries, Ltd., melting point (activation temperature) 174 ° C.
  • Solder particles 1 (SnBi solder particles, melting point 139 ° C., “DS10” manufactured by Mitsui Kinzoku Co., Ltd.) are subjected to the following surface treatment, average particle diameter 13 ⁇ m)
  • solder particles 200 g of solder particles, 40 g of adipic acid, and 70 g of acetone are weighed in a three-necked flask, and 0.3 g of dibutyltin oxide, which is a dehydration condensation catalyst between the hydroxyl groups of the solder particles and the carboxyl groups of adipic acid, is added. The reaction was carried out at 4 ° C for 4 hours. Thereafter, the solder particles were collected by filtration.
  • dibutyltin oxide which is a dehydration condensation catalyst between the hydroxyl groups of the solder particles and the carboxyl groups of adipic acid
  • the collected solder particles, 50 g of adipic acid, 200 g of toluene, and 0.3 g of para-toluenesulfonic acid are weighed in a three-necked flask and allowed to react at 120 ° C. for 3 hours while evacuating and refluxing. It was. At this time, the reaction was carried out while removing water produced by dehydration condensation using a Dean-Stark extraction device.
  • solder particles were collected by filtration, washed with hexane, and dried. Thereafter, the obtained solder particles were crushed with a ball mill, and then a sieve was selected so as to obtain a predetermined CV value. The obtained solder particles were surface-treated so that carboxyl groups were present on the outer surface.
  • Solder particles 2 (SnBi solder particles, melting point 139 ° C., “DS30” manufactured by Mitsui Kinzoku Co., Ltd.) surface-treated in the same manner as the solder particles 1, average particle diameter 32 ⁇ m
  • Phenoxy resin (“YP-50S” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.)
  • Examples 1 to 4, 6 to 9 (1) Preparation of anisotropic conductive paste The components shown in Table 1 below were blended in the blending amounts shown in Table 1 to obtain anisotropic conductive paste. In the anisotropic conductive paste obtained, the thermosetting compound was dispersed in the form of particles.
  • FR-4 substrate having a copper electrode pattern (copper electrode thickness 10 ⁇ m) having an L / S of 50 ⁇ m / 50 ⁇ m on the upper surface
  • Second connection object member the flexible printed circuit board (2nd connection object member) which has a copper electrode pattern (copper electrode thickness 10 micrometers) whose L / S is 50 micrometers / 50 micrometers on the lower surface was prepared.
  • the overlapping area of the glass epoxy substrate and the flexible substrate was 1.5 cm ⁇ 4 mm, and the number of connected electrodes was 75 pairs.
  • the anisotropic conductive paste immediately after fabrication was applied to the upper surface of the glass epoxy substrate so as to have a thickness of 50 ⁇ m to form an anisotropic conductive paste layer.
  • the flexible printed circuit board was laminated on the upper surface of the anisotropic conductive paste layer so that the electrodes face each other. At this time, no pressure was applied. The weight of the flexible printed board is added to the anisotropic conductive paste layer. Thereafter, while heating the anisotropic conductive paste layer to 190 ° C., the solder was melted and the anisotropic conductive paste layer was cured at 190 ° C. to obtain a first connection structure.
  • Glass epoxy substrate (FR-4 substrate) having a copper electrode pattern (copper electrode thickness 10 ⁇ m) having L / S of 75 ⁇ m / 75 ⁇ m on the upper surface (First connection object member) was prepared.
  • the flexible printed circuit board (2nd connection object member) which has a copper electrode pattern (copper electrode thickness 10 micrometers) whose L / S is 75 micrometers / 75 micrometers on the lower surface was prepared.
  • 2nd connection structure was obtained like manufacture of the 1st connection structure except having used the above-mentioned glass epoxy board and flexible printed circuit board from which L / S differs.
  • 3rd connection structure was obtained like manufacture of the 1st connection structure except having used the above-mentioned glass epoxy board and flexible printed circuit board from which L / S differs.
  • Electrode size (L) / inter-electrode space (S) is 100 ⁇ m / 100 ⁇ m (for the third connection structure), 75 ⁇ m / 75 ⁇ m (for the second connection structure), 50 ⁇ m / 50 ⁇ m (first connection structure) 5 mm square semiconductor chip (thickness 400 ⁇ m) and a glass epoxy substrate (size 30 ⁇ 30 mm, thickness 0.4 mm) having electrodes facing it.
  • First, second, and third connection structures were obtained in the same manner as in Example 1 except that a semiconductor chip and a glass epoxy substrate were used.
  • the 1st, 2nd, 3rd connection structure was obtained like Example 1 except having used an anisotropic conductive film.
  • Electrode size (L) / inter-electrode space (S) is 100 ⁇ m / 100 ⁇ m (for the third connection structure), 75 ⁇ m / 75 ⁇ m (for the second connection structure), 50 ⁇ m / 50 ⁇ m (first connection structure) 5 mm square semiconductor chip (thickness 400 ⁇ m) and a glass epoxy substrate (size 30 ⁇ 30 mm thickness 0.4 mm) having electrodes facing it.
  • the first, second, and third connection structures were obtained in the same manner as in Comparative Example 1 except that this semiconductor chip and glass epoxy substrate were used.
  • Viscosity The viscosity ⁇ 1 at 25 ° C. of the anisotropic conductive paste was measured under the conditions of 25 ° C. and 5 rpm using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.). Further, the viscosity ⁇ 2 at the melting point of the flux of the anisotropic conductive paste was measured using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.) under the condition of the melting point of the flux and 5 rpm.
  • the viscosity ⁇ 3 at the melting point of the solder particles of the anisotropic conductive paste was measured using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.) under the condition of the melting point of the solder particles and 5 rpm.
  • the ratio ( ⁇ 1 / ⁇ 2), the ratio ( ⁇ 1 / ⁇ 3), and the ratio ( ⁇ 2 / ⁇ 3) were determined from the obtained measured values.
  • connection distance (inter-electrode spacing)
  • solder placement accuracy on electrodes In the cross section (cross section in the direction shown in FIG. 1) of the obtained first connection structure, it is separated from the solder portion disposed between the electrodes in 100% of the total area of the solder. Thus, the area (%) of the solder remaining in the cured product was evaluated. In addition, the average of the area in five cross sections was computed. The placement accuracy of the solder on the electrode was determined according to the following criteria.
  • Average value of connection resistance is 10 7 ⁇ or more ⁇ : Average value of connection resistance is 10 6 ⁇ or more, less than 10 7 ⁇ ⁇ : Average value of connection resistance is 10 5 ⁇ or more, less than 10 6 ⁇ ⁇ : Connection The average resistance is less than 10 5 ⁇
  • the second connection target member is a flexible printed circuit board
  • the second connection target member is It can be seen that the effect of improving the conduction reliability by using the conductive paste of the present invention can be obtained more effectively than in the case of a semiconductor chip.
  • FIGS. 4A, 4B and 4C show an example of a connection structure using a conductive paste not included in the embodiment of the present invention.
  • 4A and 4B are cross-sectional images
  • FIG. 4C is a planar image.
  • 4A, 4B, and 4C a plurality of solders (solder particles) remaining in the cured product away from the solder portions disposed between the electrodes exist on the side of the solder portions.
  • grains which remain

Abstract

Provided is a conductive paste which is capable of efficiently disposing solder particles on an electrode and enhancing conduction reliability between electrodes. A conductive paste according to the present invention contains a thermosetting component, a flux and a plurality of solder particles. This conductive paste has a viscosity of from 0.1 Pa·s to 3 Pa·s (inclusive) at the melting point of the flux, and a viscosity of from 0.1 Pa·s to 5 Pa·s (inclusive) at the melting point of the solder particles.

Description

導電ペースト、接続構造体及び接続構造体の製造方法Conductive paste, connection structure, and manufacturing method of connection structure
 本発明は、はんだ粒子を含む導電ペーストに関する。また、本発明は、上記導電ペーストを用いた接続構造体及び接続構造体の製造方法に関する。 The present invention relates to a conductive paste containing solder particles. The present invention also relates to a connection structure using the conductive paste and a method for manufacturing the connection structure.
 異方性導電ペースト及び異方性導電フィルム等の異方性導電材料が広く知られている。上記異方性導電材料では、バインダー樹脂中に導電性粒子が分散されている。 Anisotropic conductive materials such as anisotropic conductive paste and anisotropic conductive film are widely known. In the anisotropic conductive material, conductive particles are dispersed in a binder resin.
 上記異方性導電材料は、各種の接続構造体を得るために、例えば、フレキシブルプリント基板とガラス基板との接続(FOG(Film on Glass))、半導体チップとフレキシブルプリント基板との接続(COF(Chip on Film))、半導体チップとガラス基板との接続(COG(Chip on Glass))、並びにフレキシブルプリント基板とガラスエポキシ基板との接続(FOB(Film on Board))等に使用されている。 In order to obtain various connection structures, for example, the anisotropic conductive material may be connected between a flexible printed circuit board and a glass substrate (FOG (Film on Glass)), or connected between a semiconductor chip and a flexible printed circuit board (COF ( (Chip on Film)), connection between a semiconductor chip and a glass substrate (COG (Chip on Glass)), connection between a flexible printed circuit board and a glass epoxy substrate (FOB (Film on Board)), and the like.
 上記異方性導電材料により、例えば、フレキシブルプリント基板の電極とガラスエポキシ基板の電極とを電気的に接続する際には、ガラスエポキシ基板上に、導電性粒子を含む異方性導電材料を配置する。次に、フレキシブルプリント基板を積層して、加熱及び加圧する。これにより、異方性導電材料を硬化させて、導電性粒子を介して電極間を電気的に接続して、接続構造体を得る。 For example, when electrically connecting the electrode of the flexible printed circuit board and the electrode of the glass epoxy substrate by the anisotropic conductive material, an anisotropic conductive material containing conductive particles is disposed on the glass epoxy substrate. To do. Next, a flexible printed circuit board is laminated, and heated and pressurized. As a result, the anisotropic conductive material is cured, and the electrodes are electrically connected via the conductive particles to obtain a connection structure.
 上記異方性導電材料の一例として、下記の特許文献1には、熱硬化性樹脂を含む樹脂層と、はんだ粉と、硬化剤とを含み、上記はんだ粉と上記硬化剤とが上記樹脂層中に存在する接着テープが開示されている。この接着テープは、フィルム状であり、ペースト状ではない。 As an example of the anisotropic conductive material, the following Patent Document 1 includes a resin layer containing a thermosetting resin, solder powder, and a curing agent, and the solder powder and the curing agent include the resin layer. An adhesive tape present therein is disclosed. This adhesive tape is in the form of a film, not a paste.
 また、特許文献1では、上記接着テープを用いた接着方法が開示されている。具体的には、第一基板、接着テープ、第二基板、接着テープ、及び第三基板を下からこの順に積層して、積層体を得る。このとき、第一基板の表面に設けられた第一電極と、第二基板の表面に設けられた第二電極とを対向させる。また、第二基板の表面に設けられた第二電極と第三基板の表面に設けられた第三電極とを対向させる。そして、積層体を所定の温度で加熱して接着する。これにより、接続構造体を得る。 Further, Patent Document 1 discloses a bonding method using the above-mentioned adhesive tape. Specifically, a first substrate, an adhesive tape, a second substrate, an adhesive tape, and a third substrate are laminated in this order from the bottom to obtain a laminate. At this time, the first electrode provided on the surface of the first substrate is opposed to the second electrode provided on the surface of the second substrate. Moreover, the 2nd electrode provided in the surface of the 2nd board | substrate and the 3rd electrode provided in the surface of the 3rd board | substrate are made to oppose. Then, the laminate is heated and bonded at a predetermined temperature. Thereby, a connection structure is obtained.
WO2008/023452A1WO2008 / 023452A1
 特許文献1に記載の接着テープは、フィルム状であり、ペースト状ではない。このため、はんだ粉を電極(ライン)上に効率的に配置することは困難である。例えば、特許文献1に記載の接着テープでは、はんだ粉の一部が、電極が形成されていない領域(スペース)にも配置されやすい。電極が形成されていない領域に配置されたはんだ粉は、電極間の導通に寄与しない。 The adhesive tape described in Patent Document 1 is a film, not a paste. For this reason, it is difficult to efficiently arrange the solder powder on the electrodes (lines). For example, in the adhesive tape described in Patent Document 1, a part of the solder powder is easily placed in a region (space) where no electrode is formed. Solder powder disposed in a region where no electrode is formed does not contribute to conduction between the electrodes.
 また、はんだ粉を含む異方性導電ペーストであっても、はんだ粉が電極(ライン)上に効率的に配置されないことがある。 Also, even if the anisotropic conductive paste contains solder powder, the solder powder may not be efficiently disposed on the electrodes (lines).
 本発明の目的は、はんだ粒子を電極上に効率的に配置することができ、電極間の導通信頼性を高めることができる導電ペーストを提供することである。また、本発明は、上記導電ペーストを用いた接続構造体及び接続構造体の製造方法を提供することである。 An object of the present invention is to provide a conductive paste that can efficiently arrange solder particles on electrodes and can improve conduction reliability between the electrodes. Moreover, this invention is providing the manufacturing method of the connection structure and connection structure using the said electrically conductive paste.
 本発明の広い局面によれば、熱硬化性成分と、フラックスと、複数のはんだ粒子とを含み、前記フラックスの融点での粘度が0.1Pa・s以上、3Pa・s以下であり、前記はんだ粒子の融点での粘度が0.1Pa・s以上、5Pa・s以下である、導電ペーストが提供される。 According to a wide aspect of the present invention, the solder includes a thermosetting component, a flux, and a plurality of solder particles, and the viscosity at the melting point of the flux is 0.1 Pa · s or more and 3 Pa · s or less. A conductive paste is provided in which the viscosity at the melting point of the particles is 0.1 Pa · s or more and 5 Pa · s or less.
 本発明に係る導電ペーストのある特定の局面では、前記フラックスの融点が80℃以上、190℃以下であり、他の特定の局面では、前記フラックスの融点が100℃以上、190℃以下である。 In a specific aspect of the conductive paste according to the present invention, the melting point of the flux is 80 ° C. or more and 190 ° C. or less, and in another specific aspect, the melting point of the flux is 100 ° C. or more and 190 ° C. or less.
 本発明に係る導電ペーストのある特定の局面では、前記導電ペースト100重量%中、前記フラックスの含有量が0.1重量%以上、5重量%以下である。 In a specific aspect of the conductive paste according to the present invention, the content of the flux is 0.1 wt% or more and 5 wt% or less in 100 wt% of the conductive paste.
 本発明に係る導電ペーストのある特定の局面では、前記導電ペーストは、フィラーを含まないか、又は、フィラーを導電ペースト100重量%中に0.25重量%未満で含む。 In a specific aspect of the conductive paste according to the present invention, the conductive paste does not contain a filler or contains a filler in less than 0.25% by weight in 100% by weight of the conductive paste.
 本発明に係る導電ペーストのある特定の局面では、前記はんだ粒子は、外表面にカルボキシル基が存在するように表面処理されている。 In a specific aspect of the conductive paste according to the present invention, the solder particles are surface-treated so that carboxyl groups exist on the outer surface.
 本発明に係る導電ペーストのある特定の局面では、前記フラックスの融点が、前記はんだ粒子の融点よりも高い。 In a specific aspect of the conductive paste according to the present invention, the melting point of the flux is higher than the melting point of the solder particles.
 本発明の広い局面によれば、少なくとも1つの第1の電極を表面に有する第1の接続対象部材と、少なくとも1つの第2の電極を表面に有する第2の接続対象部材と、前記第1の接続対象部材と、前記第2の接続対象部材とを接続している接続部とを備え、前記接続部が、上述した導電ペーストにより形成されており、前記第1の電極と前記第2の電極とが、前記接続部中のはんだ部により電気的に接続されている、接続構造体が提供される。 According to a wide aspect of the present invention, a first connection target member having at least one first electrode on the surface, a second connection target member having at least one second electrode on the surface, and the first The connection target member and a connection part connecting the second connection target member are formed, and the connection part is formed of the above-described conductive paste, and the first electrode and the second electrode A connection structure is provided in which an electrode is electrically connected by a solder portion in the connection portion.
 本発明の広い局面によれば、上述した導電ペーストを用いて、少なくとも1つの第1の電極を表面に有する第1の接続対象部材の表面上に、前記導電ペーストを配置する工程と、前記導電ペーストの前記第1の接続対象部材側とは反対の表面上に、少なくとも1つの第2の電極を表面に有する第2の接続対象部材を、前記第1の電極と前記第2の電極とが対向するように配置する工程と、前記はんだ粒子の融点以上かつ前記熱硬化性成分の硬化温度以上に前記導電ペーストを加熱することで、前記第1の接続対象部材と前記第2の接続対象部材とを接続している接続部を、前記導電ペーストにより形成し、かつ、前記第1の電極と前記第2の電極とを、前記接続部中のはんだ部により電気的に接続する工程とを備える、接続構造体の製造方法が提供される。 According to a wide aspect of the present invention, using the conductive paste described above, the step of disposing the conductive paste on the surface of the first connection target member having at least one first electrode on the surface; On the surface opposite to the first connection target member side of the paste, the second connection target member having at least one second electrode on the surface is formed by the first electrode and the second electrode. The first connection target member and the second connection target member are disposed so as to face each other, and by heating the conductive paste to a temperature equal to or higher than the melting point of the solder particles and equal to or higher than the curing temperature of the thermosetting component. And a step of electrically connecting the first electrode and the second electrode with a solder portion in the connection portion. , How to manufacture connection structures There is provided.
 本発明に係る接続構造体の製造方法のある特定の局面では、前記第2の接続対象部材を配置する工程及び前記接続部を形成する工程において、加圧を行わず、前記導電ペーストには、前記第2の接続対象部材の重量が加わる。 In a specific aspect of the method for manufacturing a connection structure according to the present invention, in the step of arranging the second connection target member and the step of forming the connection portion, no pressure is applied, and the conductive paste includes The weight of the second connection target member is added.
 前記第2の接続対象部材が、樹脂フィルム、フレキシブルプリント基板、リジッドフレキシブル基板又はフレキシブルフラットケーブルであることが好ましい。 It is preferable that the second connection target member is a resin film, a flexible printed board, a rigid flexible board, or a flexible flat cable.
 本発明に係る導電ペーストは、熱硬化性成分と、フラックスと、複数のはんだ粒子とを含み、上記フラックスの融点での粘度が0.1Pa・s以上、3Pa・s以下であり、上記はんだ粒子の融点での粘度が0.1Pa・s以上、5Pa・s以下であるので、電極間を電気的に接続した場合に、はんだ粒子を電極上に効率的に配置することができ、電極間の導通信頼性を高めることができる。 The conductive paste according to the present invention includes a thermosetting component, a flux, and a plurality of solder particles, and the viscosity at the melting point of the flux is 0.1 Pa · s or more and 3 Pa · s or less. Since the viscosity at the melting point is 0.1 Pa · s or more and 5 Pa · s or less, when the electrodes are electrically connected, the solder particles can be efficiently disposed on the electrodes. The conduction reliability can be increased.
図1は、本発明の一実施形態に係る導電ペーストを用いて得られる接続構造体を模式的に示す部分切欠正面断面図である。FIG. 1 is a partially cutaway front sectional view schematically showing a connection structure obtained using a conductive paste according to an embodiment of the present invention. 図2(a)~(c)は、本発明の一実施形態に係る導電ペーストを用いて、接続構造体を製造する方法の一例の各工程を説明するための図である。FIGS. 2A to 2C are diagrams for explaining each step of an example of a method of manufacturing a connection structure using the conductive paste according to the embodiment of the present invention. 図3は、接続構造体の変形例を示す部分切欠正面断面図である。FIG. 3 is a partially cutaway front sectional view showing a modified example of the connection structure. 図4(a),(b)及び(c)は、本発明の実施形態に含まれない導電ペーストを用いた接続構造体の一例を示す画像であり、図4(a)及び(b)は断面画像であり、図4(c)は平面画像である。FIGS. 4A, 4B, and 4C are images showing an example of a connection structure using a conductive paste that is not included in the embodiment of the present invention. FIGS. 4A and 4B are images. FIG. 4C is a cross-sectional image, and FIG. 4C is a planar image.
 以下、本発明の詳細を説明する。 Hereinafter, the details of the present invention will be described.
 本発明に係る導電ペーストは、熱硬化性成分と、フラックスと、複数のはんだ粒子とを含む。本発明に係る導電ペーストでは、上記フラックスの融点での粘度が0.1Pa・s以上、3Pa・s以下である。本発明に係る導電ペーストでは、上記はんだ粒子の融点での粘度が0.1Pa・s以上、5Pa・s以下である。 The conductive paste according to the present invention includes a thermosetting component, a flux, and a plurality of solder particles. In the conductive paste according to the present invention, the viscosity at the melting point of the flux is 0.1 Pa · s or more and 3 Pa · s or less. In the conductive paste according to the present invention, the solder particles have a viscosity at the melting point of 0.1 Pa · s to 5 Pa · s.
 本発明に係る導電ペーストでは、上記の構成が採用されているので、電極間を電気的に接続した場合に、複数のはんだ粒子が電極間に集まりやすく、複数のはんだ粒子を電極(ライン)上に効率的に配置することができる。また、複数のはんだ粒子の一部が、電極が形成されていない領域(スペース)に配置され難く、電極が形成されていない領域に配置されるはんだ粒子の量をかなり少なくすることができる。従って、電極間の導通信頼性を高めることができる。しかも、接続されてはならない横方向に隣接する電極間の電気的な接続を防ぐことができ、絶縁信頼性を高めることができる。このような効果が得られるのは、フラックスの融点にて、はんだ粒子の表面の酸化被膜を除去する際に、導電ペーストの粘度が適度であり、かつ、はんだ粒子が溶融する際に、導電ペーストの粘度が適度であるためであると考えられる。 In the conductive paste according to the present invention, since the above-described configuration is adopted, when the electrodes are electrically connected, a plurality of solder particles are easily collected between the electrodes, and the plurality of solder particles are placed on the electrodes (lines). Can be arranged efficiently. Moreover, it is difficult for some of the plurality of solder particles to be disposed in a region (space) where no electrode is formed, and the amount of solder particles disposed in a region where no electrode is formed can be considerably reduced. Therefore, the conduction reliability between the electrodes can be improved. In addition, it is possible to prevent electrical connection between laterally adjacent electrodes that should not be connected, and to improve insulation reliability. Such an effect is obtained when the oxide paste on the surface of the solder particles is removed at the melting point of the flux, the viscosity of the conductive paste is moderate, and when the solder particles melt, the conductive paste This is considered to be because the viscosity of this is moderate.
 本発明に係る導電ペーストは、以下の本発明に係る接続構造体の製造方法に好適に用いることができる。 The conductive paste according to the present invention can be suitably used for the following manufacturing method of the connection structure according to the present invention.
 本発明に係る接続構造体の製造方法では、導電ペーストと、第1の接続対象部材と、第2の接続対象部材とを用いる。本発明に係る接続構造体の製造方法で用いられる導電材料は、導電フィルムではなく、導電ペーストである。上記導電ペーストは、熱硬化性成分と、フラックスと、複数のはんだ粒子とを含む。上記第1の接続対象部材は、少なくとも1つの第1の電極を表面に有する。上記第2の接続対象部材は、少なくとも1つの第2の電極を表面に有する。 In the method for manufacturing a connection structure according to the present invention, a conductive paste, a first connection target member, and a second connection target member are used. The conductive material used in the method for manufacturing a connection structure according to the present invention is not a conductive film but a conductive paste. The conductive paste includes a thermosetting component, a flux, and a plurality of solder particles. The first connection target member has at least one first electrode on the surface. The second connection target member has at least one second electrode on the surface.
 本発明に係る接続構造体の製造方法は、上記第1の接続対象部材の表面上に、本発明に係る導電ペーストを配置する工程と、上記導電ペーストの上記第1の接続対象部材側とは反対の表面上に、上記第2の接続対象部材を、上記第1の電極と上記第2の電極とが対向するように配置する工程と、上記はんだ粒子の融点以上及び上記熱硬化性成分の硬化温度以上に上記導電ペーストを加熱することで、上記第1の接続対象部材と上記第2の接続対象部材とを接続している接続部を、上記導電ペーストにより形成し、かつ、上記第1の電極と上記第2の電極とを、上記接続部中のはんだ部により電気的に接続する工程とを備える。本発明に係る接続構造体の製造方法では、上記第2の接続対象部材を配置する工程及び上記接続部を形成する工程において、加圧を行わず、上記導電ペーストには、上記第2の接続対象部材の重量が加わることが好ましい。本発明に係る接続構造体の製造方法では、上記第2の接続対象部材を配置する工程及び上記接続部を形成する工程において、上記導電ペーストには、上記第2の接続対象部材の重量の力を超える加圧圧力は加わらないことが好ましい。 In the method for manufacturing a connection structure according to the present invention, the step of disposing the conductive paste according to the present invention on the surface of the first connection target member, and the first connection target member side of the conductive paste include: On the opposite surface, the step of disposing the second connection object member so that the first electrode and the second electrode face each other, the melting point of the solder particles or higher, and the thermosetting component By heating the conductive paste above the curing temperature, a connection portion connecting the first connection target member and the second connection target member is formed by the conductive paste, and the first And electrically connecting the second electrode and the second electrode with a solder portion in the connection portion. In the manufacturing method of the connection structure according to the present invention, in the step of arranging the second connection target member and the step of forming the connection portion, no pressure is applied, and the second connection is applied to the conductive paste. The weight of the target member is preferably added. In the method for manufacturing a connection structure according to the present invention, in the step of arranging the second connection target member and the step of forming the connection portion, the conductive paste has a weight force of the second connection target member. It is preferable not to apply a pressure higher than.
 本発明に係る接続構造体の製造方法では、上記の構成が採用されているので、複数のはんだ粒子が第1の電極と第2の電極との間に集まりやすく、複数のはんだ粒子を電極(ライン)上に効率的に配置することができる。また、複数のはんだ粒子の一部が、電極が形成されていない領域(スペース)に配置され難く、電極が形成されていない領域に配置されるはんだ粒子の量をかなり少なくすることができる。従って、第1の電極と第2の電極との間の導通信頼性を高めることができる。しかも、接続されてはならない横方向に隣接する電極間の電気的な接続を防ぐことができ、絶縁信頼性を高めることができる。 In the manufacturing method of the connection structure according to the present invention, since the above-described configuration is adopted, the plurality of solder particles are easily collected between the first electrode and the second electrode, and the plurality of solder particles are collected on the electrode ( Line). Moreover, it is difficult for some of the plurality of solder particles to be disposed in a region (space) where no electrode is formed, and the amount of solder particles disposed in a region where no electrode is formed can be considerably reduced. Therefore, the conduction reliability between the first electrode and the second electrode can be improved. In addition, it is possible to prevent electrical connection between laterally adjacent electrodes that should not be connected, and to improve insulation reliability.
 このように、複数のはんだ粒子を電極上に効率的に配置し、かつ電極が形成されていない領域に配置されるはんだ粒子の量をかなり少なくするためには、導電フィルムではなく、導電ペーストを用いる必要があることを、本発明者らは見出した。 Thus, in order to efficiently arrange a plurality of solder particles on the electrode and to considerably reduce the amount of solder particles arranged in the region where the electrode is not formed, a conductive paste is used instead of a conductive film. The inventors have found that they need to be used.
 また、はんだ粒子とは別の粒子として、基材粒子と該基材粒子の表面上に配置されたはんだ層とを有する導電性粒子が知られている。このような導電性粒子を用いた場合と比べて、はんだ粒子を用いた場合には、上記フラックスの融点及び上記はんだ粒子の融点が特定の範囲にあることによって、はんだ粒子の電極上への配置精度の向上効果が大きくなる。 Further, conductive particles having base material particles and a solder layer disposed on the surface of the base material particles are known as particles different from the solder particles. Compared to the case where such conductive particles are used, when solder particles are used, the melting point of the flux and the melting point of the solder particles are in a specific range, so that the solder particles are arranged on the electrodes. The effect of improving accuracy is increased.
 さらに、上記第2の接続対象部材を配置する工程及び上記接続部を形成する工程において、加圧を行わず、上記導電ペーストに、上記第2の接続対象部材の重量が加われば、接続部が形成される前に電極が形成されていない領域(スペース)に配置されていたはんだ粒子が第1の電極と第2の電極との間により一層集まりやすくなり、複数のはんだ粒子を電極(ライン)上に効率的に配置することができることも、本発明者らは見出した。本発明では、導電フィルムではなく、導電ペーストを用いるという構成と、加圧を行わず、上記導電ペーストには、上記第2の接続対象部材の重量が加わるようにするという構成とを組み合わせて採用することには、本発明の効果をより一層高いレベルで得るために大きな意味がある。 Furthermore, in the step of arranging the second connection target member and the step of forming the connection portion, if the weight of the second connection target member is added to the conductive paste without applying pressure, the connection portion is Solder particles arranged in a region (space) where no electrode is formed before being formed are more easily collected between the first electrode and the second electrode, and a plurality of solder particles are separated into electrodes (lines). The inventors have also found that they can be arranged efficiently above. In the present invention, a configuration in which a conductive paste is used instead of a conductive film and a configuration in which the weight of the second connection target member is added to the conductive paste without applying pressure are used in combination. This has a great meaning in order to obtain the effects of the present invention at a higher level.
 なお、WO2008/023452A1では、はんだ粉を電極表面に押し流して効率よく移動させる観点からは、接着時に所定の圧力で加圧するとよいことが記載されており、加圧圧力は、はんだ領域をさらに確実に形成する観点では、例えば、0MPa以上、好ましくは1MPa以上とすることが記載されており、更に、接着テープに意図的に加える圧力が0MPaであっても、接着テープ上に配置された部材の自重により、接着テープに所定の圧力が加わってもよいことが記載されている。WO2008/023452A1では、接着テープに意図的に加える圧力が0MPaであってもよいことは記載されているが、0MPaを超える圧力を付与した場合と0MPaとした場合との効果の差異については、何ら記載されていない。 In addition, WO2008 / 023452A1 describes that it is preferable to pressurize with a predetermined pressure at the time of bonding from the viewpoint of efficiently moving the solder powder to the electrode surface, and the pressurizing pressure further ensures the solder area. For example, it is described that the pressure is set to 0 MPa or more, preferably 1 MPa or more. Further, even if the pressure intentionally applied to the adhesive tape is 0 MPa, the member disposed on the adhesive tape It is described that a predetermined pressure may be applied to the adhesive tape by its own weight. In WO2008 / 023452A1, it is described that the pressure applied intentionally to the adhesive tape may be 0 MPa, but there is no difference between the effect when the pressure exceeding 0 MPa is applied and when the pressure is set to 0 MPa. Not listed.
 また、導電フィルムではなく、導電ペーストを用いれば、導電ペーストの塗布量によって、接続部の厚みを適宜調整することも可能である。一方で、導電フィルムでは、接続部の厚みを変更したり、調整したりするためには、異なる厚みの導電フィルムを用意したり、所定の厚みの導電フィルムを用意したりしなければならないという問題がある。 If a conductive paste is used instead of a conductive film, the thickness of the connecting portion can be adjusted as appropriate depending on the amount of the conductive paste applied. On the other hand, in the conductive film, in order to change or adjust the thickness of the connection portion, it is necessary to prepare a conductive film having a different thickness or to prepare a conductive film having a predetermined thickness. There is.
 以下、図面を参照しつつ、本発明の具体的な実施形態及び実施例を説明することにより、本発明を明らかにする。 Hereinafter, the present invention will be clarified by describing specific embodiments and examples of the present invention with reference to the drawings.
 先ず、図1に、本発明の一実施形態に係る導電ペーストを用いて得られる接続構造体を模式的に部分切欠正面断面図で示す。 First, FIG. 1 schematically shows a connection structure obtained by using a conductive paste according to an embodiment of the present invention in a partially cutaway front sectional view.
 図1に示す接続構造体1は、第1の接続対象部材2と、第2の接続対象部材3と、第1の接続対象部材2と第2の接続対象部材3とを接続している接続部4とを備える。接続部4は、熱硬化性成分と、フラックスと、複数のはんだ粒子とを含む導電ペーストにより形成されている。この導電ペーストでは、上記フラックスの融点での粘度及び上記はんだ粒子の融点での粘度が特定の範囲内にある。 The connection structure 1 shown in FIG. 1 is a connection that connects a first connection target member 2, a second connection target member 3, and the first connection target member 2 and the second connection target member 3. Part 4. The connection portion 4 is formed of a conductive paste containing a thermosetting component, a flux, and a plurality of solder particles. In this conductive paste, the viscosity at the melting point of the flux and the viscosity at the melting point of the solder particles are within a specific range.
 接続部4は、複数のはんだ粒子が集まり互いに接合したはんだ部4Aと、熱硬化性成分が熱硬化された硬化物部4Bとを有する。 The connecting portion 4 includes a solder portion 4A in which a plurality of solder particles are gathered and joined to each other, and a cured product portion 4B in which a thermosetting component is thermally cured.
 第1の接続対象部材2は表面(上面)に、複数の第1の電極2aを有する。第2の接続対象部材3は表面(下面)に、複数の第2の電極3aを有する。第1の電極2aと第2の電極3aとが、はんだ部4Aにより電気的に接続されている。従って、第1の接続対象部材2と第2の接続対象部材3とが、はんだ部4Aにより電気的に接続されている。なお、接続部4において、第1の電極2aと第2の電極3aとの間に集まったはんだ部4Aとは異なる領域(硬化物部4B部分)では、はんだは存在しない。はんだ部4Aとは異なる領域(硬化物部4B部分)では、はんだ部4Aと離れたはんだは存在しない。なお、少量であれば、第1の電極2aと第2の電極3aとの間に集まったはんだ部4Aとは異なる領域(硬化物部4B部分)に、はんだが存在していてもよい。 The first connection object member 2 has a plurality of first electrodes 2a on the surface (upper surface). The second connection target member 3 has a plurality of second electrodes 3a on the surface (lower surface). The first electrode 2a and the second electrode 3a are electrically connected by the solder portion 4A. Therefore, the first connection target member 2 and the second connection target member 3 are electrically connected by the solder portion 4A. In the connection portion 4, no solder exists in a region (cured product portion 4B portion) different from the solder portion 4A gathered between the first electrode 2a and the second electrode 3a. In an area different from the solder part 4A (hardened product part 4B part), there is no solder separated from the solder part 4A. If the amount is small, the solder may be present in a region (cured product portion 4B portion) different from the solder portion 4A gathered between the first electrode 2a and the second electrode 3a.
 図1に示すように、接続構造体1では、複数のはんだ粒子が溶融した後、はんだ粒子の溶融物が電極の表面を濡れ拡がった後に固化して、はんだ部4Aが形成されている。このため、はんだ部4Aと第1の電極2a、並びにはんだ部4Aと第2の電極3aとの接続面積が大きくなる。すなわち、はんだ粒子を用いることにより、導電性の外表面がニッケル、金又は銅等の金属である導電性粒子を用いた場合と比較して、はんだ部4Aと第1の電極2a、並びにはんだ部4Aと第2の電極3aとの接触面積が大きくなる。このため、接続構造体1における導通信頼性及び接続信頼性が高くなる。なお、導電ペーストに含まれるフラックスは、一般に、加熱により次第に失活する。 As shown in FIG. 1, in the connection structure 1, after a plurality of solder particles are melted, the molten solder particles are wetted and spread on the surface of the electrode to solidify to form a solder portion 4 </ b> A. For this reason, the connection area of 4 A of solder parts and the 1st electrode 2a, and 4 A of solder parts, and the 2nd electrode 3a becomes large. That is, by using the solder particles, the solder portion 4A, the first electrode 2a, and the solder portion are compared with the case where the conductive outer surface is made of a metal such as nickel, gold or copper. The contact area between 4A and the second electrode 3a increases. For this reason, the conduction | electrical_connection reliability and connection reliability in the connection structure 1 become high. In general, the flux contained in the conductive paste is gradually deactivated by heating.
 なお、図1に示す接続構造体1では、はんだ部4Aの全てが、第1,第2の電極2a,3a間の対向している領域に位置している。図3に示す変形例の接続構造体1Xは、接続部4Xのみが、図1に示す接続構造体1と異なる。接続部4Xは、はんだ部4XAと硬化物部4XBとを有する。接続構造体1Xのように、はんだ部4XAの多くが、第1,第2の電極2a,3aの対向している領域に位置しており、はんだ部4XAの一部が第1,第2の電極2a,3aの対向している領域から側方にはみ出していてもよい。第1,第2の電極2a,3aの対向している領域から側方にはみ出しているはんだ部4XAは、はんだ部4XAの一部であり、はんだ部4XAから離れたはんだではない。なお、本実施形態では、はんだ部から離れたはんだの量を少なくすることができるが、はんだ部から離れたはんだが硬化物部中に存在していてもよい。 In addition, in the connection structure 1 shown in FIG. 1, all of the solder portions 4A are located in the facing region between the first and second electrodes 2a and 3a. The connection structure 1X of the modification shown in FIG. 3 is different from the connection structure 1 shown in FIG. 1 only in the connection portion 4X. The connection part 4X has the solder part 4XA and the hardened | cured material part 4XB. As in the connection structure 1X, most of the solder portions 4XA are located in regions where the first and second electrodes 2a and 3a are opposed to each other, and a part of the solder portion 4XA is first and second. You may protrude to the side from the area | region which electrode 2a, 3a has opposed. The solder part 4XA protruding laterally from the region where the first and second electrodes 2a and 3a are opposed is a part of the solder part 4XA and is not a solder separated from the solder part 4XA. In the present embodiment, the amount of solder away from the solder portion can be reduced, but the solder away from the solder portion may exist in the cured product portion.
 はんだ粒子の使用量を少なくすれば、接続構造体1を得ることが容易になる。はんだ粒子の使用量を多くすれば、接続構造体1Xを得ることが容易になる。 If the amount of solder particles used is reduced, the connection structure 1 can be easily obtained. If the amount of the solder particles used is increased, it becomes easy to obtain the connection structure 1X.
 次に、本発明の一実施形態に係る導電ペーストを用いて、接続構造体1を製造する方法の一例を説明する。 Next, an example of a method for manufacturing the connection structure 1 using the conductive paste according to the embodiment of the present invention will be described.
 先ず、第1の電極2aを表面(上面)に有する第1の接続対象部材2を用意する。次に、図2(a)に示すように、第1の接続対象部材2の表面上に、熱硬化性成分11Bと、複数のはんだ粒子11Aと、フラックスとを含む導電ペースト11を配置する(第1の工程)。第1の接続対象部材2の第1の電極2aが設けられた表面上に、導電ペースト11を配置する。導電ペースト11の配置の後に、はんだ粒子11Aは、第1の電極2a(ライン)上と、第1の電極2aが形成されていない領域(スペース)上との双方に配置されている。 First, the first connection target member 2 having the first electrode 2a on the surface (upper surface) is prepared. Next, as shown in FIG. 2A, a conductive paste 11 including a thermosetting component 11B, a plurality of solder particles 11A, and a flux is disposed on the surface of the first connection target member 2 ( First step). The conductive paste 11 is disposed on the surface of the first connection target member 2 on which the first electrode 2a is provided. After the conductive paste 11 is disposed, the solder particles 11A are disposed both on the first electrode 2a (line) and on a region (space) where the first electrode 2a is not formed.
 導電ペースト11の配置方法としては、特に限定されないが、ディスペンサーによる塗布、スクリーン印刷、及びインクジェット装置による吐出等が挙げられる。 The arrangement method of the conductive paste 11 is not particularly limited, and examples thereof include application with a dispenser, screen printing, and ejection with an inkjet device.
 また、第2の電極3aを表面(下面)に有する第2の接続対象部材3を用意する。次に、図2(b)に示すように、第1の接続対象部材2の表面上の導電ペースト11において、導電ペースト11の第1の接続対象部材2側とは反対側の表面上に、第2の接続対象部材3を配置する(第2の工程)。導電ペースト11の表面上に、第2の電極3a側から、第2の接続対象部材3を配置する。このとき、第1の電極2aと第2の電極3aとを対向させる。 Moreover, the 2nd connection object member 3 which has the 2nd electrode 3a on the surface (lower surface) is prepared. Next, as shown in FIG. 2B, in the conductive paste 11 on the surface of the first connection target member 2, on the surface of the conductive paste 11 opposite to the first connection target member 2 side, The 2nd connection object member 3 is arrange | positioned (2nd process). On the surface of the conductive paste 11, the second connection target member 3 is disposed from the second electrode 3a side. At this time, the first electrode 2a and the second electrode 3a are opposed to each other.
 次に、はんだ粒子11Aの融点以上及び熱硬化性成分11Bの硬化温度以上に導電ペースト11を加熱する(第3の工程)。すなわち、はんだ粒子11Aの融点及び熱硬化性成分11Bの硬化温度の内のより低い温度以上に、導電ペースト11を加熱する。この加熱時には、電極が形成されていない領域に存在していたはんだ粒子11Aは、第1の電極2aと第2の電極3aとの間に集まる(自己凝集効果)。本実施形態では、導電フィルムではなく、導電ペーストを用いているために、はんだ粒子11Aが、第1の電極2aと第2の電極3aとの間に効果的に集まる。また、はんだ粒子11Aは溶融し、互いに接合する。また、熱硬化性成分11Bは熱硬化する。この結果、図2(c)に示すように、第1の接続対象部材2と第2の接続対象部材3とを接続している接続部4を、導電ペースト11により形成する。導電ペースト11により接続部4が形成され、複数のはんだ粒子11Aが接合することによってはんだ部4Aが形成され、熱硬化性成分11Bが熱硬化することによって硬化物部4Bが形成される。はんだ粒子11Aは速やかに移動するので、第1の電極2aと第2の電極3aとの間に位置していないはんだ粒子11Aの移動が開始してから、第1の電極2aと第2の電極3aとの間にはんだ粒子11Aの移動が完了するまでに、温度を一定に保持しなくてもよい。 Next, the conductive paste 11 is heated above the melting point of the solder particles 11A and above the curing temperature of the thermosetting component 11B (third step). That is, the conductive paste 11 is heated to a temperature lower than the melting point of the solder particles 11A and the curing temperature of the thermosetting component 11B. At the time of this heating, the solder particles 11A that existed in the region where no electrode is formed gather between the first electrode 2a and the second electrode 3a (self-aggregation effect). In this embodiment, since the conductive paste is used instead of the conductive film, the solder particles 11A are effectively collected between the first electrode 2a and the second electrode 3a. Also, the solder particles 11A are melted and joined together. Further, the thermosetting component 11B is thermoset. As a result, as shown in FIG. 2C, the connection portion 4 connecting the first connection target member 2 and the second connection target member 3 is formed with the conductive paste 11. The connection part 4 is formed by the conductive paste 11, the solder part 4A is formed by joining a plurality of solder particles 11A, and the cured part 4B is formed by thermosetting the thermosetting component 11B. Since the solder particles 11A move quickly, the first electrode 2a and the second electrode are moved after the movement of the solder particles 11A not located between the first electrode 2a and the second electrode 3a starts. It is not necessary to keep the temperature constant until the movement of the solder particles 11A is completed.
 本実施形態では、上記第2の工程及び上記第3の工程において、加圧を行っていない。本実施形態では、導電ペースト11には、第2の接続対象部材3の重量が加わる。このため、接続部4の形成時に、はんだ粒子11Aが、第1の電極2aと第2の電極3aとの間に効果的に集まる。なお、上記第2の工程及び上記第3の工程の内の少なくとも一方において、加圧を行えば、はんだ粒子が第1の電極と第2の電極との間に集まろうとする作用が阻害される傾向が高くなる。このことは、本発明者らによって見出された。 In this embodiment, no pressure is applied in the second step and the third step. In the present embodiment, the weight of the second connection target member 3 is added to the conductive paste 11. For this reason, when the connection part 4 is formed, the solder particles 11A are effectively collected between the first electrode 2a and the second electrode 3a. In addition, if pressure is applied in at least one of the second step and the third step, the action of the solder particles trying to collect between the first electrode and the second electrode is hindered. The tendency to become higher. This has been found by the inventors.
 このようにして、図1に示す接続構造体1が得られる。なお、上記第2の工程と上記第3の工程とは連続して行われてもよい。また、上記第2の工程を行った後に、得られる第1の接続対象部材2と導電ペースト11と第2の接続対象部材3との積層体を、加熱部に移動させて、上記第3の工程を行ってもよい。上記加熱を行うために、加熱部材上に上記積層体を配置してもよく、加熱された空間内に上記積層体を配置してもよい。 In this way, the connection structure 1 shown in FIG. 1 is obtained. The second step and the third step may be performed continuously. Moreover, after performing the said 2nd process, the laminated body of the obtained 1st connection object member 2, the electrically conductive paste 11, and the 2nd connection object member 3 is moved to a heating part, and said 3rd said You may perform a process. In order to perform the heating, the laminate may be disposed on a heating member, or the laminate may be disposed in a heated space.
 上記第3の工程における加熱温度は、はんだ粒子の融点以上及び熱硬化性成分の硬化温度以上であれば特に限定されない。上記加熱温度は、好ましくは130℃以上、より好ましくは160℃以上、好ましくは450℃以下、より好ましくは250℃以下、更に好ましくは200℃以下である。 The heating temperature in the third step is not particularly limited as long as it is higher than the melting point of the solder particles and higher than the curing temperature of the thermosetting component. The heating temperature is preferably 130 ° C. or higher, more preferably 160 ° C. or higher, preferably 450 ° C. or lower, more preferably 250 ° C. or lower, and still more preferably 200 ° C. or lower.
 なお、上記第1の接続対象部材は、少なくとも1つの第1の電極を有していればよい。上記第1の接続対象部材は複数の第1の電極を有することが好ましい。上記第2の接続対象部材は、少なくとも1つの第2の電極を有していればよい。上記第2の接続対象部材は複数の第2の電極を有することが好ましい。 In addition, the said 1st connection object member should just have at least 1 1st electrode. The first connection target member preferably has a plurality of first electrodes. The said 2nd connection object member should just have at least 1 2nd electrode. The second connection target member preferably has a plurality of second electrodes.
 上記第1,第2の接続対象部材は、特に限定されない。上記第1,第2の接続対象部材としては、具体的には、半導体チップ、コンデンサ及びダイオード等の電子部品、並びに樹脂フィルム、プリント基板、フレキシブルプリント基板、フレキシブルフラットケーブル、リジッドフレキシブル基板、ガラスエポキシ基板及びガラス基板等の回路基板などの電子部品等が挙げられる。上記第1,第2の接続対象部材は、電子部品であることが好ましい。 The first and second connection target members are not particularly limited. Specific examples of the first and second connection target members include electronic components such as semiconductor chips, capacitors, and diodes, and resin films, printed boards, flexible printed boards, flexible flat cables, rigid flexible boards, glass epoxies. Examples thereof include electronic components such as circuit boards such as substrates and glass substrates. The first and second connection target members are preferably electronic components.
 上記第1の接続対象部材及び上記第2の接続対象部材の内の少なくとも一方が、樹脂フィルム、フレキシブルプリント基板、フレキシブルフラットケーブル又はリジッドフレキシブル基板であることが好ましい。上記第2の接続対象部材が、樹脂フィルム、フレキシブルプリント基板、フレキシブルフラットケーブル又はリジッドフレキシブル基板であることが好ましい。樹脂フィルム、フレキシブルプリント基板、フレキシブルフラットケーブル及びリジッドフレキシブル基板は、柔軟性が高く、比較的軽量であるという性質を有する。このような接続対象部材の接続に導電フィルムを用いた場合には、はんだ粒子が電極上に集まりにくい傾向がある。これに対して、本発明に係る導電ペーストを用いているために、樹脂フィルム、フレキシブルプリント基板、フレキシブルフラットケーブル又はリジッドフレキシブル基板を用いたとしても、はんだ粒子を電極上に効率的に集めることができ、電極間の導通信頼性を充分に高めることができる。樹脂フィルム、フレキシブルプリント基板、フレキシブルフラットケーブル又はリジッドフレキシブル基板を用いる場合に、半導体チップなどの他の接続対象部材を用いた場合と比べて、加圧を行わないことによる電極間の導通信頼性の向上効果がより一層効果的に得られる。 It is preferable that at least one of the first connection target member and the second connection target member is a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board. The second connection target member is preferably a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board. Resin films, flexible printed boards, flexible flat cables, and rigid flexible boards have the property of being highly flexible and relatively lightweight. When a conductive film is used for connection of such a connection object member, there exists a tendency for a solder particle not to gather on an electrode. On the other hand, since the conductive paste according to the present invention is used, even if a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board is used, the solder particles can be efficiently collected on the electrode. And the reliability of conduction between the electrodes can be sufficiently enhanced. When using a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible circuit board, the reliability of conduction between electrodes by not applying pressure compared to the case of using other connection target members such as a semiconductor chip. The improvement effect can be obtained more effectively.
 上記接続対象部材に設けられている電極としては、金電極、ニッケル電極、錫電極、アルミニウム電極、銅電極、銀電極、モリブデン電極、SUS電極及びタングステン電極等の金属電極が挙げられる。上記接続対象部材がフレキシブルプリント基板又はフレキシブルフラットケーブルである場合には、上記電極は金電極、ニッケル電極、錫電極、銀電極又は銅電極であることが好ましい。上記接続対象部材がガラス基板である場合には、上記電極はアルミニウム電極、銅電極、モリブデン電極、銀電極又はタングステン電極であることが好ましい。なお、上記電極がアルミニウム電極である場合には、アルミニウムのみで形成された電極であってもよく、金属酸化物層の表面にアルミニウム層が積層された電極であってもよい。上記金属酸化物層の材料としては、3価の金属元素がドープされた酸化インジウム及び3価の金属元素がドープされた酸化亜鉛等が挙げられる。上記3価の金属元素としては、Sn、Al及びGa等が挙げられる。 Examples of the electrode provided on the connection target member include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a silver electrode, a molybdenum electrode, a SUS electrode, and a tungsten electrode. When the connection object member is a flexible printed circuit board or a flexible flat cable, the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, a silver electrode, or a copper electrode. When the connection target member is a glass substrate, the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, or a tungsten electrode. In addition, when the said electrode is an aluminum electrode, the electrode formed only with aluminum may be sufficient and the electrode by which the aluminum layer was laminated | stacked on the surface of the metal oxide layer may be sufficient. Examples of the material for the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element. Examples of the trivalent metal element include Sn, Al, and Ga.
 上記第1の電極と上記第2の電極とが対向している位置における上記接続部の距離D1は好ましくは5μm以上、より好ましくは20μm以上、好ましくは50μm以下、より好ましくは75μm以下である。上記距離D1が上記下限以上であると、接続部と接続対象部材との接続信頼性がより一層高くなる。上記距離D1が上記上限以下であると、接続部の形成時にはんだ粒子が電極上により一層集まりやすくなり、電極間の導通信頼性がより一層高くなる。 The distance D1 of the connecting portion at the position where the first electrode and the second electrode face each other is preferably 5 μm or more, more preferably 20 μm or more, preferably 50 μm or less, more preferably 75 μm or less. When the distance D1 is equal to or greater than the lower limit, the connection reliability between the connection portion and the connection target member is further increased. When the distance D1 is less than or equal to the above upper limit, solder particles are more likely to gather on the electrodes when the connection portion is formed, and the conduction reliability between the electrodes is further enhanced.
 はんだ粒子を電極上により一層効率的に配置するために、上記導電ペーストの25℃での粘度η1は好ましくは10Pa・s以上、より好ましくは50Pa・s以上、更に好ましくは100Pa・s以上、好ましくは800Pa・s以下、より好ましくは600Pa・s以下、更に好ましくは500Pa・s以下である。 In order to arrange the solder particles more efficiently on the electrode, the viscosity η1 at 25 ° C. of the conductive paste is preferably 10 Pa · s or more, more preferably 50 Pa · s or more, and further preferably 100 Pa · s or more, preferably Is 800 Pa · s or less, more preferably 600 Pa · s or less, and still more preferably 500 Pa · s or less.
 上記粘度は、配合成分の種類及び配合量に適宜調整可能である。また、フィラーの使用により、粘度を比較的高くすることができる。但し、フィラーは、はんだ粒子の移動を阻害することがあるので、フィラーの含有量は少ないことが好ましい。 The viscosity can be appropriately adjusted depending on the type and amount of the compounding component. Further, the use of a filler can make the viscosity relatively high. However, since the filler may inhibit the movement of the solder particles, the filler content is preferably small.
 はんだ粒子を電極上により一層効率的に配置するために、上記導電ペーストのフラックスの融点での粘度η2は0.1Pa・s以上、3Pa・s以下である。はんだ粒子を電極上により一層効率的に配置する観点からは、上記粘度η2は、好ましくは0.15Pa・s以上、より好ましくは0.2Pa・s以上、好ましくは2Pa・s以下、より好ましくは1Pa・s以下である。 In order to arrange the solder particles more efficiently on the electrode, the viscosity η2 at the melting point of the flux of the conductive paste is 0.1 Pa · s or more and 3 Pa · s or less. From the viewpoint of more efficiently arranging the solder particles on the electrode, the viscosity η2 is preferably 0.15 Pa · s or more, more preferably 0.2 Pa · s or more, preferably 2 Pa · s or less, more preferably 1 Pa · s or less.
 はんだ粒子を電極上により一層効率的に配置するために、上記導電ペーストのはんだ粒子の融点での粘度η3は0.1Pa・s以上、5Pa・s以下である。はんだ粒子を電極上により一層効率的に配置する観点からは、上記粘度η3は、好ましくは0.15Pa・s以上、より好ましくは0.2Pa・s以上、好ましくは3Pa・s以下、より好ましくは1Pa・s以下である。 In order to more efficiently arrange the solder particles on the electrode, the viscosity η3 at the melting point of the solder particles of the conductive paste is 0.1 Pa · s or more and 5 Pa · s or less. From the viewpoint of more efficiently arranging the solder particles on the electrode, the viscosity η3 is preferably 0.15 Pa · s or more, more preferably 0.2 Pa · s or more, preferably 3 Pa · s or less, more preferably 1 Pa · s or less.
 はんだ粒子を電極上により一層効率的に配置する観点からは、上記粘度η1の上記粘度η2に対する比(η1/η2)は、好ましくは15以上、より好ましくは50以上、好ましくは3000以下、より好ましくは2500以下である。 From the viewpoint of more efficiently arranging the solder particles on the electrode, the ratio of the viscosity η1 to the viscosity η2 (η1 / η2) is preferably 15 or more, more preferably 50 or more, preferably 3000 or less, more preferably Is 2500 or less.
 はんだ粒子を電極上により一層効率的に配置する観点からは、上記粘度η1の上記粘度η3に対する比(η1/η3)は、好ましくは10以上、より好ましくは40以上、好ましくは2500以下、より好ましくは2000以下である。 From the viewpoint of more efficiently arranging the solder particles on the electrode, the ratio of the viscosity η1 to the viscosity η3 (η1 / η3) is preferably 10 or more, more preferably 40 or more, preferably 2500 or less, more preferably Is 2000 or less.
 はんだ粒子を電極上により一層効率的に配置する観点からは、上記粘度η2の上記粘度η3に対する比(η2/η3)は、好ましくは0.1以上、より好ましくは0.3以上、好ましくは10以下、より好ましくは1以下である。 From the viewpoint of more efficiently arranging the solder particles on the electrode, the ratio of the viscosity η2 to the viscosity η3 (η2 / η3) is preferably 0.1 or more, more preferably 0.3 or more, preferably 10 Below, more preferably 1 or less.
 上記粘度は、例えば、E型粘度計(東機産業社製)等を用いて、25℃及び5rpmの条件で測定可能である。 The viscosity can be measured under conditions of 25 ° C. and 5 rpm using, for example, an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.).
 上記導電ペーストは、熱硬化性成分とフラックスと複数のはんだ粒子とを含む。上記熱硬化性成分は、加熱により硬化可能な硬化性化合物(熱硬化性化合物)と、熱硬化剤とを含むことが好ましい。 The conductive paste includes a thermosetting component, a flux, and a plurality of solder particles. The thermosetting component preferably includes a curable compound (thermosetting compound) that can be cured by heating, and a thermosetting agent.
 以下、本発明の他の詳細を説明する。 Hereinafter, other details of the present invention will be described.
 (はんだ粒子)
 上記はんだ粒子は、はんだを導電性の外表面に有する。上記はんだ粒子は、中心部分及び導電性の外表面とのいずれもがはんだにより形成されている。はんだを電極上により一層効率的に配置する観点からは、上記はんだ粒子は、外表面にカルボキシル基が存在するように表面処理されていることが好ましい。上記はんだ粒子は、外表面にカルボキシル基が存在するように表面処理された後に、導電ペーストに配合されることが好ましい。
(Solder particles)
The solder particles have solder on a conductive outer surface. As for the said solder particle, both a center part and an electroconductive outer surface are formed with the solder. From the viewpoint of more efficiently arranging the solder on the electrode, the solder particles are preferably surface-treated so that carboxyl groups exist on the outer surface. The solder particles are preferably blended into the conductive paste after being surface-treated so that carboxyl groups exist on the outer surface.
 上記はんだは、融点が450℃以下である金属(低融点金属)であることが好ましい。上記はんだ粒子は、融点が450℃以下である金属粒子(低融点金属粒子)であることが好ましい。上記低融点金属粒子は、低融点金属を含む粒子である。該低融点金属とは、融点が450℃以下の金属を示す。低融点金属の融点は好ましくは300℃以下、より好ましくは160℃以下である。また、上記はんだ粒子は錫を含む。上記はんだ粒子に含まれる金属100重量%中、錫の含有量は好ましくは30重量%以上、より好ましくは40重量%以上、更に好ましくは70重量%以上、特に好ましくは90重量%以上である。上記はんだ粒子における錫の含有量が上記下限以上であると、はんだ部と電極との接続信頼性がより一層高くなる。 The solder is preferably a metal (low melting point metal) having a melting point of 450 ° C. or lower. The solder particles are preferably metal particles (low melting point metal particles) having a melting point of 450 ° C. or lower. The low melting point metal particles are particles containing a low melting point metal. The low melting point metal is a metal having a melting point of 450 ° C. or lower. The melting point of the low melting point metal is preferably 300 ° C. or lower, more preferably 160 ° C. or lower. The solder particles include tin. In 100% by weight of the metal contained in the solder particles, the content of tin is preferably 30% by weight or more, more preferably 40% by weight or more, still more preferably 70% by weight or more, and particularly preferably 90% by weight or more. When the content of tin in the solder particles is equal to or higher than the lower limit, the connection reliability between the solder portion and the electrode is further enhanced.
 なお、上記錫の含有量は、高周波誘導結合プラズマ発光分光分析装置(堀場製作所社製「ICP-AES」)、又は蛍光X線分析装置(島津製作所社製「EDX-800HS」)等を用いて測定可能である。 The tin content is determined using a high-frequency inductively coupled plasma emission spectrometer (“ICP-AES” manufactured by Horiba, Ltd.) or a fluorescent X-ray analyzer (“EDX-800HS” manufactured by Shimadzu). It can be measured.
 上記はんだ粒子を用いることで、はんだが溶融して電極に接合し、はんだ部が電極間を導通させる。例えば、はんだ部と電極とが点接触ではなく面接触しやすいため、接続抵抗が低くなる。また、はんだ粒子の使用により、はんだ部と電極との接合強度が高くなる結果、はんだ部と電極との剥離がより一層生じ難くなり、導通信頼性及び接続信頼性が効果的に高くなる。 By using the above solder particles, the solder is melted and joined to the electrodes, and the solder portion conducts between the electrodes. For example, since the solder portion and the electrode are not in point contact but in surface contact, the connection resistance is lowered. In addition, the use of solder particles increases the bonding strength between the solder portion and the electrode. As a result, peeling between the solder portion and the electrode is further less likely to occur, and the conduction reliability and the connection reliability are effectively increased.
 上記はんだ粒子を構成する低融点金属は特に限定されない。該低融点金属は、錫、又は錫を含む合金であることが好ましい。該合金は、錫-銀合金、錫-銅合金、錫-銀-銅合金、錫-ビスマス合金、錫-亜鉛合金、錫-インジウム合金等が挙げられる。なかでも、電極に対する濡れ性に優れることから、上記低融点金属は、錫、錫-銀合金、錫-銀-銅合金、錫-ビスマス合金、錫-インジウム合金であることが好ましい。錫-ビスマス合金、錫-インジウム合金であることがより好ましい。 The low melting point metal constituting the solder particles is not particularly limited. The low melting point metal is preferably tin or an alloy containing tin. Examples of the alloy include a tin-silver alloy, a tin-copper alloy, a tin-silver-copper alloy, a tin-bismuth alloy, a tin-zinc alloy, and a tin-indium alloy. Of these, the low melting point metal is preferably tin, a tin-silver alloy, a tin-silver-copper alloy, a tin-bismuth alloy, or a tin-indium alloy because of its excellent wettability with respect to the electrode. More preferred are a tin-bismuth alloy and a tin-indium alloy.
 上記はんだ粒子は、JIS Z3001:溶接用語に基づき、液相線が450℃以下である溶加材であることが好ましい。上記はんだ粒子の組成としては、例えば亜鉛、金、銀、鉛、銅、錫、ビスマス、インジウムなどを含む金属組成が挙げられる。なかでも低融点で鉛フリーである錫-インジウム系(117℃共晶)、又は錫-ビスマス系(139℃共晶)が好ましい。すなわち、上記はんだ粒子は、鉛を含まないことが好ましく、錫とインジウムとを含むか、又は錫とビスマスとを含むことが好ましい。 The solder particles are preferably a filler material having a liquidus line of 450 ° C. or lower based on JIS Z3001: Welding terms. Examples of the composition of the solder particles include metal compositions containing zinc, gold, silver, lead, copper, tin, bismuth, indium and the like. Of these, a tin-indium system (117 ° C. eutectic) or a tin-bismuth system (139 ° C. eutectic) which is low-melting and lead-free is preferable. That is, the solder particles preferably do not contain lead, and preferably contain tin and indium, or contain tin and bismuth.
 上記はんだ部と電極との接合強度をより一層高めるために、上記はんだ粒子は、ニッケル、銅、アンチモン、アルミニウム、亜鉛、鉄、金、チタン、リン、ゲルマニウム、テルル、コバルト、ビスマス、マンガン、クロム、モリブデン、パラジウム等の金属を含んでいてもよい。また、はんだ部と電極との接合強度をさらに一層高める観点からは、上記はんだ粒子は、ニッケル、銅、アンチモン、アルミニウム又は亜鉛を含むことが好ましい。はんだ部と電極との接合強度をより一層高める観点からは、接合強度を高めるためのこれらの金属の含有量は、はんだ粒子100重量%中、好ましくは0.0001重量%以上、好ましくは1重量%以下である。 In order to further increase the bonding strength between the solder part and the electrode, the solder particles include nickel, copper, antimony, aluminum, zinc, iron, gold, titanium, phosphorus, germanium, tellurium, cobalt, bismuth, manganese, chromium. Further, it may contain a metal such as molybdenum and palladium. Moreover, from the viewpoint of further increasing the bonding strength between the solder portion and the electrode, the solder particles preferably contain nickel, copper, antimony, aluminum, or zinc. From the viewpoint of further increasing the bonding strength between the solder part and the electrode, the content of these metals for increasing the bonding strength is preferably 0.0001% by weight or more, preferably 1% by weight in 100% by weight of the solder particles. % Or less.
 上記はんだ粒子の平均粒子径は、好ましくは0.5μm以上、より好ましくは1μm以上、更に好ましくは3μm以上、特に好ましくは5μm以上、好ましくは100μm以下、より好ましくは40μm以下、より一層好ましくは30μm以下、更に好ましくは20μm以下、特に好ましくは15μm以下、最も好ましくは10μm以下である。上記はんだ粒子の平均粒子径が上記下限以上及び上記上限以下であると、はんだ粒子を電極上により一層効率的に配置することができる。上記はんだ粒子の平均粒子径は、3μm以上、30μm以下であることが特に好ましい。 The average particle diameter of the solder particles is preferably 0.5 μm or more, more preferably 1 μm or more, still more preferably 3 μm or more, particularly preferably 5 μm or more, preferably 100 μm or less, more preferably 40 μm or less, and even more preferably 30 μm. Hereinafter, it is more preferably 20 μm or less, particularly preferably 15 μm or less, and most preferably 10 μm or less. When the average particle diameter of the solder particles is not less than the above lower limit and not more than the above upper limit, the solder particles can be more efficiently arranged on the electrode. The average particle diameter of the solder particles is particularly preferably 3 μm or more and 30 μm or less.
 上記はんだ粒子の「平均粒子径」は、数平均粒子径を示す。はんだ粒子の平均粒子径は、例えば、任意のはんだ粒子50個を電子顕微鏡又は光学顕微鏡にて観察し、平均値を算出することにより求められる。 “The average particle diameter” of the solder particles indicates the number average particle diameter. The average particle diameter of the solder particles is obtained, for example, by observing 50 arbitrary solder particles with an electron microscope or an optical microscope and calculating an average value.
 上記導電ペースト100重量%中、上記はんだ粒子の含有量は好ましくは1重量%以上、より好ましくは2重量%以上、更に好ましくは10重量%以上、特に好ましくは20重量%以上、最も好ましくは30重量%以上、好ましくは80重量%以下、より好ましくは60重量%以下、更に好ましくは50重量%以下である。上記はんだ粒子の含有量が上記下限以上及び上記上限以下であると、電極上にはんだ粒子をより一層効率的に配置することができ、電極間にはんだ粒子を多く配置することが容易であり、導通信頼性がより一層高くなる。導通信頼性をより一層高める観点からは、上記はんだ粒子の含有量は多い方が好ましい。 The content of the solder particles in 100% by weight of the conductive paste is preferably 1% by weight or more, more preferably 2% by weight or more, still more preferably 10% by weight or more, particularly preferably 20% by weight or more, and most preferably 30%. % By weight or more, preferably 80% by weight or less, more preferably 60% by weight or less, and still more preferably 50% by weight or less. When the content of the solder particles is not less than the above lower limit and not more than the above upper limit, it is possible to more efficiently arrange the solder particles on the electrodes, and it is easy to arrange many solder particles between the electrodes, The conduction reliability is further increased. From the viewpoint of further improving the conduction reliability, it is preferable that the content of the solder particles is large.
 (加熱により硬化可能な化合物:熱硬化性成分)
 上記熱硬化性化合物としては、オキセタン化合物、エポキシ化合物、エピスルフィド化合物、(メタ)アクリル化合物、フェノール化合物、アミノ化合物、不飽和ポリエステル化合物、ポリウレタン化合物、シリコーン化合物及びポリイミド化合物等が挙げられる。なかでも、導電ペーストの硬化性及び粘度をより一層良好にし、接続信頼性をより一層高める観点から、エポキシ化合物が好ましい。
(Compound curable by heating: thermosetting component)
Examples of the thermosetting compound include oxetane compounds, epoxy compounds, episulfide compounds, (meth) acrylic compounds, phenolic compounds, amino compounds, unsaturated polyester compounds, polyurethane compounds, silicone compounds, and polyimide compounds. Among these, an epoxy compound is preferable from the viewpoint of further improving the curability and viscosity of the conductive paste and further improving the connection reliability.
 導電ペーストにおいて、上記熱硬化性化合物は、粒子状に分散していることが好ましい。 In the conductive paste, the thermosetting compound is preferably dispersed in the form of particles.
 上記導電ペースト100重量%中、上記熱硬化性化合物の含有量は、好ましくは20重量%以上、より好ましくは40重量%以上、更に好ましくは50重量%以上、好ましくは99重量%以下、より好ましくは98重量%以下、更に好ましくは90重量%以下、特に好ましくは80重量%以下である。耐衝撃性をより一層高める観点からは、上記熱硬化性成分の含有量は多い方が好ましい。 In 100% by weight of the conductive paste, the content of the thermosetting compound is preferably 20% by weight or more, more preferably 40% by weight or more, still more preferably 50% by weight or more, and preferably 99% by weight or less. Is 98% by weight or less, more preferably 90% by weight or less, and particularly preferably 80% by weight or less. From the viewpoint of further improving the impact resistance, it is preferable that the content of the thermosetting component is large.
 (熱硬化剤:熱硬化性成分)
 上記熱硬化剤は、上記熱硬化性化合物を熱硬化させる。上記熱硬化剤としては、イミダゾール硬化剤、アミン硬化剤、フェノール硬化剤、ポリチオール硬化剤、酸無水物、熱カチオン開始剤及び熱ラジカル発生剤等が挙げられる。上記熱硬化剤は、1種のみが用いられてもよく、2種以上が併用されてもよい。
(Thermosetting agent: thermosetting component)
The thermosetting agent thermosets the thermosetting compound. Examples of the thermosetting agent include an imidazole curing agent, an amine curing agent, a phenol curing agent, a polythiol curing agent, an acid anhydride, a thermal cation initiator, and a thermal radical generator. As for the said thermosetting agent, only 1 type may be used and 2 or more types may be used together.
 なかでも、導電ペーストを低温でより一層速やかに硬化可能であるので、イミダゾール硬化剤、ポリチオール硬化剤又はアミン硬化剤が好ましい。また、加熱により硬化可能な硬化性化合物と上記熱硬化剤とを混合したときに保存安定性が高くなるので、潜在性の硬化剤が好ましい。潜在性の硬化剤は、潜在性イミダゾール硬化剤、潜在性ポリチオール硬化剤又は潜在性アミン硬化剤であることが好ましい。なお、上記熱硬化剤は、ポリウレタン樹脂又はポリエステル樹脂等の高分子物質で被覆されていてもよい。 Among these, an imidazole curing agent, a polythiol curing agent, or an amine curing agent is preferable because the conductive paste can be cured more rapidly at a low temperature. Moreover, since a storage stability becomes high when the curable compound curable by heating and the thermosetting agent are mixed, a latent curing agent is preferable. The latent curing agent is preferably a latent imidazole curing agent, a latent polythiol curing agent or a latent amine curing agent. In addition, the said thermosetting agent may be coat | covered with polymeric substances, such as a polyurethane resin or a polyester resin.
 上記イミダゾール硬化剤としては、特に限定されず、2-メチルイミダゾール、2-エチル-4-メチルイミダゾール、1-シアノエチル-2-フェニルイミダゾール、1-シアノエチル-2-フェニルイミダゾリウムトリメリテート、2,4-ジアミノ-6-[2’-メチルイミダゾリル-(1’)]-エチル-s-トリアジン及び2,4-ジアミノ-6-[2’-メチルイミダゾリル-(1’)]-エチル-s-トリアジンイソシアヌル酸付加物等が挙げられる。 The imidazole curing agent is not particularly limited, and 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4-Diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine and 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s- Examples include triazine isocyanuric acid adducts.
 上記ポリチオール硬化剤としては、特に限定されず、トリメチロールプロパントリス-3-メルカプトプロピオネート、ペンタエリスリトールテトラキス(3-メルカプトブチレート)、ペンタエリスリトールテトラキス-3-メルカプトプロピオネート及びジペンタエリスリトールヘキサ-3-メルカプトプロピオネート等が挙げられる。 The polythiol curing agent is not particularly limited, but is trimethylolpropane tris-3-mercaptopropionate, pentaerythritol tetrakis (3-mercaptobutyrate), pentaerythritol tetrakis-3-mercaptopropionate and dipentaerythritol hexa. -3-Mercaptopropionate and the like.
 上記ポリチオール硬化剤の溶解度パラメーターは、好ましくは9.5以上、好ましくは12以下である。上記溶解度パラメーターは、Fedors法にて計算される。例えば、トリメチロールプロパントリス-3-メルカプトプロピオネートの溶解度パラメーターは9.6、ジペンタエリスリトールヘキサ-3-メルカプトプロピオネートの溶解度パラメーターは11.4である。 The solubility parameter of the polythiol curing agent is preferably 9.5 or more, and preferably 12 or less. The solubility parameter is calculated by the Fedors method. For example, the solubility parameter of trimethylolpropane tris-3-mercaptopropionate is 9.6, and the solubility parameter of dipentaerythritol hexa-3-mercaptopropionate is 11.4.
 上記アミン硬化剤としては、特に限定されず、ヘキサメチレンジアミン、オクタメチレンジアミン、デカメチレンジアミン、3,9-ビス(3-アミノプロピル)-2,4,8,10-テトラスピロ[5.5]ウンデカン、ビス(4-アミノシクロヘキシル)メタン、メタフェニレンジアミン及びジアミノジフェニルスルホン等が挙げられる。 The amine curing agent is not particularly limited, and hexamethylenediamine, octamethylenediamine, decamethylenediamine, 3,9-bis (3-aminopropyl) -2,4,8,10-tetraspiro [5.5]. Examples include undecane, bis (4-aminocyclohexyl) methane, metaphenylenediamine, and diaminodiphenylsulfone.
 上記熱カチオン硬化剤としては、ヨードニウム系カチオン硬化剤、オキソニウム系カチオン硬化剤及びスルホニウム系カチオン硬化剤等が挙げられる。上記ヨードニウム系カチオン硬化剤としては、ビス(4-tert-ブチルフェニル)ヨードニウムヘキサフルオロホスファート等が挙げられる。上記オキソニウム系カチオン硬化剤としては、トリメチルオキソニウムテトラフルオロボラート等が挙げられる。上記スルホニウム系カチオン硬化剤としては、トリ-p-トリルスルホニウムヘキサフルオロホスファート等が挙げられる。 Examples of the thermal cation curing agent include iodonium cation curing agents, oxonium cation curing agents, and sulfonium cation curing agents. Examples of the iodonium-based cationic curing agent include bis (4-tert-butylphenyl) iodonium hexafluorophosphate. Examples of the oxonium-based cationic curing agent include trimethyloxonium tetrafluoroborate. Examples of the sulfonium-based cationic curing agent include tri-p-tolylsulfonium hexafluorophosphate.
 上記熱ラジカル発生剤としては、特に限定されず、アゾ化合物及び有機過酸化物等が挙げられる。上記アゾ化合物としては、アゾビスイゾブチロニトリル(AIBN)等が挙げられる。上記有機過酸化物としては、ジ-tert-ブチルペルオキシド及びメチルエチルケトンペルオキシド等が挙げられる。 The thermal radical generator is not particularly limited, and examples thereof include azo compounds and organic peroxides. Examples of the azo compound include azobisisobutyronitrile (AIBN). Examples of the organic peroxide include di-tert-butyl peroxide and methyl ethyl ketone peroxide.
 上記熱硬化剤の反応開始温度は、好ましくは50℃以上、より好ましくは70℃以上、更に好ましくは80℃以上、好ましくは250℃以下、より好ましくは200℃以下、更に好ましくは150℃以下、特に好ましくは140℃以下である。上記熱硬化剤の反応開始温度が上記下限以上及び上記上限以下であると、はんだ粒子が電極上により一層効率的に配置される。上記熱硬化剤の反応開始温度は80℃以上、140℃以下であることが特に好ましい。 The reaction initiation temperature of the thermosetting agent is preferably 50 ° C or higher, more preferably 70 ° C or higher, still more preferably 80 ° C or higher, preferably 250 ° C or lower, more preferably 200 ° C or lower, still more preferably 150 ° C or lower, Especially preferably, it is 140 degrees C or less. When the reaction start temperature of the thermosetting agent is not less than the above lower limit and not more than the above upper limit, the solder particles are more efficiently arranged on the electrode. The reaction initiation temperature of the thermosetting agent is particularly preferably 80 ° C. or higher and 140 ° C. or lower.
 はんだを電極上により一層効率的に配置する観点からは、上記熱硬化剤の反応開始温度は、上記はんだ粒子におけるはんだの融点よりも、低いことが好ましく、5℃以上低いことがより好ましく、10℃以上低いことが更に好ましい。 From the viewpoint of more efficiently arranging the solder on the electrode, the reaction initiation temperature of the thermosetting agent is preferably lower than the melting point of the solder in the solder particles, more preferably 5 ° C. or more, and more preferably 10 It is more preferable that the temperature is lower by at least ° C.
 上記熱硬化剤の反応開始温度は、DSCでの発熱ピークの立ち上がり開始の温度を意味する。 The reaction start temperature of the thermosetting agent means the temperature at which the exothermic peak of DSC starts to rise.
 上記熱硬化剤の含有量は特に限定されない。上記熱硬化性化合物100重量部に対して、上記熱硬化剤の含有量は、好ましくは0.01重量部以上、より好ましくは1重量部以上、好ましくは200重量部以下、より好ましくは100重量部以下、更に好ましくは75重量部以下である。熱硬化剤の含有量が上記下限以上であると、導電ペーストを充分に硬化させることが容易である。熱硬化剤の含有量が上記上限以下であると、硬化後に硬化に関与しなかった余剰の熱硬化剤が残存し難くなり、かつ硬化物の耐熱性がより一層高くなる。 The content of the thermosetting agent is not particularly limited. The content of the thermosetting agent is preferably 0.01 parts by weight or more, more preferably 1 part by weight or more, preferably 200 parts by weight or less, more preferably 100 parts by weight with respect to 100 parts by weight of the thermosetting compound. Part or less, more preferably 75 parts by weight or less. When the content of the thermosetting agent is at least the above lower limit, it is easy to sufficiently cure the conductive paste. When the content of the thermosetting agent is not more than the above upper limit, it is difficult for an excess thermosetting agent that did not participate in curing after curing to remain, and the heat resistance of the cured product is further enhanced.
 (フラックス)
 上記導電ペーストは、フラックスを含む。フラックスの使用により、はんだを電極上により一層効果的に配置することができる。該フラックスは特に限定されない。フラックスとして、はんだ接合等に一般的に用いられているフラックスを使用できる。上記フラックスとしては、例えば、塩化亜鉛、塩化亜鉛と無機ハロゲン化物との混合物、塩化亜鉛と無機酸との混合物、溶融塩、リン酸、リン酸の誘導体、有機ハロゲン化物、ヒドラジン、有機酸及び松脂等が挙げられる。上記フラックスは1種のみが用いられてもよく、2種以上が併用されてもよい。
(flux)
The conductive paste contains a flux. By using flux, the solder can be more effectively placed on the electrode. The flux is not particularly limited. As the flux, a flux generally used for soldering or the like can be used. Examples of the flux include zinc chloride, a mixture of zinc chloride and an inorganic halide, a mixture of zinc chloride and an inorganic acid, a molten salt, phosphoric acid, a derivative of phosphoric acid, an organic halide, hydrazine, an organic acid, and pine resin. Etc. As for the said flux, only 1 type may be used and 2 or more types may be used together.
 上記溶融塩としては、塩化アンモニウム等が挙げられる。上記有機酸としては、乳酸、クエン酸、ステアリン酸、グルタミン酸及びグルタル酸等が挙げられる。上記松脂としては、活性化松脂及び非活性化松脂等が挙げられる。上記フラックスは、カルボキシル基を2個以上有する有機酸、松脂であることが好ましい。上記フラックスは、カルボキシル基を2個以上有する有機酸であってもよく、松脂であってもよい。カルボキシル基を2個以上有する有機酸、松脂の使用により、電極間の導通信頼性がより一層高くなる。 Examples of the molten salt include ammonium chloride. Examples of the organic acid include lactic acid, citric acid, stearic acid, glutamic acid, and glutaric acid. Examples of the pine resin include activated pine resin and non-activated pine resin. The flux is preferably an organic acid having two or more carboxyl groups, pine resin. The flux may be an organic acid having two or more carboxyl groups, or pine resin. By using an organic acid having two or more carboxyl groups, pine resin, the conduction reliability between the electrodes is further enhanced.
 上記松脂はアビエチン酸を主成分とするロジン類である。フラックスは、ロジン類であることが好ましく、アビエチン酸であることがより好ましい。この好ましいフラックスの使用により、電極間の導通信頼性がより一層高くなる。 The above rosins are rosins whose main component is abietic acid. The flux is preferably rosins, and more preferably abietic acid. By using this preferable flux, the conduction reliability between the electrodes is further enhanced.
 上記フラックスの活性温度(融点)は、好ましくは50℃以上、より好ましくは70℃以上、更に好ましくは80℃以上、特に好ましくは100℃以上、好ましくは200℃以下、より好ましくは190℃以下、より一層好ましくは160℃以下、更に好ましくは150℃以下、更に一層好ましくは140℃以下である。上記フラックスの活性温度が上記下限以上及び上記上限以下であると、フラックス効果がより一層効果的に発揮され、はんだ粒子が電極上により一層効率的に配置される。結果として、電極間の接続抵抗が低くなり、接続信頼性も高くなる。上記フラックスの活性温度(融点)は80℃以上、190℃以下であることが好ましく、100℃以上、190℃以下であることがより好ましい。上記フラックスの活性温度は80℃以上、140℃以下であることが特に好まく、100℃以上、140℃以下であることがより好ましい。 The active temperature (melting point) of the flux is preferably 50 ° C. or higher, more preferably 70 ° C. or higher, still more preferably 80 ° C. or higher, particularly preferably 100 ° C. or higher, preferably 200 ° C. or lower, more preferably 190 ° C. or lower. More preferably, it is 160 ° C. or less, more preferably 150 ° C. or less, and still more preferably 140 ° C. or less. When the activation temperature of the flux is not less than the above lower limit and not more than the above upper limit, the flux effect is more effectively exhibited, and the solder particles are more efficiently arranged on the electrode. As a result, the connection resistance between the electrodes is reduced, and the connection reliability is also increased. The active temperature (melting point) of the flux is preferably 80 ° C. or higher and 190 ° C. or lower, and more preferably 100 ° C. or higher and 190 ° C. or lower. The activation temperature of the flux is particularly preferably 80 ° C. or higher and 140 ° C. or lower, and more preferably 100 ° C. or higher and 140 ° C. or lower.
 融点が80℃以上、190℃以下である上記フラックスとしては、コハク酸(融点186℃)、グルタル酸(融点96℃)、アジピン酸(融点152℃)、ピメリン酸(融点104℃)、スベリン酸(融点142℃)等のジカルボン酸、安息香酸(融点122℃)、リンゴ酸(融点130℃)等が挙げられる。 Examples of the flux having a melting point of 80 ° C. or higher and 190 ° C. or lower include succinic acid (melting point 186 ° C.), glutaric acid (melting point 96 ° C.), adipic acid (melting point 152 ° C.), pimelic acid (melting point 104 ° C.), suberic acid Examples thereof include dicarboxylic acids such as (melting point 142 ° C.), benzoic acid (melting point 122 ° C.), and malic acid (melting point 130 ° C.).
 また、上記フラックスの沸点は200℃以下であることが好ましい。 The boiling point of the flux is preferably 200 ° C. or lower.
 はんだを電極上により一層効率的に配置する観点からは、上記フラックスの融点は、上記はんだ粒子におけるはんだの融点よりも、高いことが好ましく、5℃以上高いことがより好ましく、10℃以上高いことが更に好ましい。 From the viewpoint of more efficiently arranging the solder on the electrode, the melting point of the flux is preferably higher than the melting point of the solder in the solder particles, preferably 5 ° C or higher, more preferably 10 ° C or higher. Is more preferable.
 はんだを電極上により一層効率的に配置する観点からは、上記フラックスの融点は、上記熱硬化剤の反応開始温度よりも、高いことが好ましく、5℃以上高いことがより好ましく、10℃以上高いことが更に好ましい。 From the viewpoint of more efficiently arranging the solder on the electrode, the melting point of the flux is preferably higher than the reaction start temperature of the thermosetting agent, more preferably 5 ° C or higher, more preferably 10 ° C or higher. More preferably.
 上記フラックスは、導電ペースト中に分散されていてもよく、はんだ粒子の表面上に付着していてもよい。 The flux may be dispersed in the conductive paste or may be adhered on the surface of the solder particles.
 フラックスの融点が、はんだの融点より高いことにより、電極部分にはんだ粒子を効率的に凝集させることができる。これは、接合時に熱を付与した場合、接続対象部材上に形成された電極と、電極周辺の接続対象部材の部分とを比較すると、電極部分の熱伝導率が電極周辺の接続対象部材部分の熱伝統率よりも高いことにより、電極部分の昇温が早いことに起因する。はんだ粒子の融点を超えた段階では、はんだ粒子の内部は溶解するが、表面に形成された酸化被膜は、フラックスの融点(活性温度)に達していないので除去されない。この状態で、電極部分の温度が先に、フラックスの融点(活性温度)に達するため、優先的に電極上に来たはんだ粒子の表面の酸化被膜が除去され、はんだ粒子が電極の表面上に濡れ拡がることができる。これにより、電極上に効率的にはんだ粒子を凝集させることができる。 Since the melting point of the flux is higher than the melting point of the solder, the solder particles can be efficiently aggregated on the electrode portion. This is because, when heat is applied at the time of joining, when the electrode formed on the connection target member is compared with the portion of the connection target member around the electrode, the thermal conductivity of the electrode portion is that of the connection target member portion around the electrode. Due to the fact that it is higher than the heat traditional rate, it is caused by the rapid temperature rise of the electrode part. At the stage where the melting point of the solder particles is exceeded, the inside of the solder particles dissolves, but the oxide film formed on the surface does not reach the melting point (activation temperature) of the flux and is not removed. In this state, since the temperature of the electrode portion first reaches the melting point (activation temperature) of the flux, the oxide film on the surface of the solder particles preferentially on the electrode is removed, and the solder particles are placed on the surface of the electrode. Can spread wet. Thereby, solder particles can be efficiently aggregated on the electrode.
 上記フラックスは、加熱によりカチオンを放出するフラックスであることが好ましい。加熱によりカチオンを放出するフラックスの使用により、はんだ粒子を電極上により一層効率的に配置することができる。 The flux is preferably a flux that releases cations by heating. By using a flux that releases cations upon heating, the solder particles can be arranged more efficiently on the electrode.
 上記加熱によりカチオンを放出するフラックスとしては、上記熱カチオン硬化剤が挙げられる。 The above-mentioned thermal cation curing agent can be used as the flux that releases cations by heating.
 上記導電ペースト100重量%中、上記フラックスの含有量は好ましくは0.5重量%以上、好ましくは30重量%以下、より好ましくは25重量%以下である。上記導電ペーストは、フラックスを含んでいなくてもよい。フラックスの含有量が上記下限以上及び上記上限以下であると、はんだ及び電極の表面に酸化被膜がより一層形成され難くなり、さらに、はんだ及び電極の表面に形成された酸化被膜をより一層効果的に除去できる。 In 100% by weight of the conductive paste, the content of the flux is preferably 0.5% by weight or more, preferably 30% by weight or less, more preferably 25% by weight or less. The conductive paste may not contain a flux. When the flux content is not less than the above lower limit and not more than the above upper limit, it becomes more difficult to form an oxide film on the surface of the solder and the electrode, and the oxide film formed on the surface of the solder and the electrode is more effective. Can be removed.
 (フィラー)
 上記導電ペーストには、フィラーを添加してもよい。フィラーは、有機フィラーであってもよく、無機フィラーであってもよい。但し、フィラーは、はんだ粒子の移動を阻害することがあるので、フィラーの含有量は少ないことが好ましい。
(Filler)
A filler may be added to the conductive paste. The filler may be an organic filler or an inorganic filler. However, since the filler may inhibit the movement of the solder particles, the filler content is preferably small.
 上記導電ペーストは、フィラーを含まないか、又は、フィラーを上記導電ペースト100重量%中に5重量%未満で含むことが好ましい。上記導電ペースト100重量%中、上記フィラーの含有量は好ましくは0重量%(未含有)以上、好ましくは5重量%以下、より好ましくは2重量%以下、更に好ましくは1重量%以下、更に一層好ましくは0.25重量%未満、特に好ましくは0.1重量%以下である。上記フィラーの含有量が上記下限以上、及び上記上限以下又は上記上限未満であると、はんだ粒子が電極上により一層効率的に配置される。上記導電ペーストは、フィラーを含まないか、又は、フィラーを上記導電ペースト100重量%中に0.25重量%未満で含むことが特に好ましく、上記導電ペーストはフィラーを含まないことが最も好ましい。フィラーの含有量が0.25重量%未満であれば、フィラーによるはんだ粒子の移動阻害が充分に小さく、フィラーの含有量が0.1重量%以下であれば、フィラーによるはんだ粒子の移動阻害がかなり小さい。 It is preferable that the conductive paste does not contain a filler or contains a filler in less than 5% by weight in 100% by weight of the conductive paste. In 100% by weight of the conductive paste, the content of the filler is preferably 0% by weight (not contained) or more, preferably 5% by weight or less, more preferably 2% by weight or less, still more preferably 1% by weight or less, even more. Preferably it is less than 0.25 wt%, particularly preferably 0.1 wt% or less. When the content of the filler is not less than the above lower limit and not more than the above upper limit or less than the above upper limit, the solder particles are more efficiently arranged on the electrode. It is particularly preferred that the conductive paste does not contain a filler or contains less than 0.25% by weight of filler in 100% by weight of the conductive paste, and most preferably the conductive paste does not contain a filler. If the filler content is less than 0.25% by weight, the solder particle migration inhibition by the filler is sufficiently small, and if the filler content is 0.1% by weight or less, the solder particle migration inhibition by the filler is inhibited. Pretty small.
 (他の成分)
 上記導電ペーストは、必要に応じて、例えば、充填剤、増量剤、軟化剤、可塑剤、重合触媒、硬化触媒、着色剤、酸化防止剤、熱安定剤、光安定剤、紫外線吸収剤、滑剤、帯電防止剤及び難燃剤等の各種添加剤を含んでいてもよい。
(Other ingredients)
If necessary, the conductive paste is, for example, a filler, an extender, a softener, a plasticizer, a polymerization catalyst, a curing catalyst, a colorant, an antioxidant, a heat stabilizer, a light stabilizer, an ultraviolet absorber, and a lubricant. In addition, various additives such as an antistatic agent and a flame retardant may be included.
 以下、実施例及び比較例を挙げて、本発明を具体的に説明する。本発明は、以下の実施例のみに限定されない。 Hereinafter, the present invention will be specifically described with reference to examples and comparative examples. The present invention is not limited only to the following examples.
 ポリマーA:
 ビスフェノールFと1,6-ヘキサンジオールジグリシジルエーテル、及びビスフェノールF型エポキシ樹脂との反応物(ポリマーA)の合成:
 ビスフェノールF(4,4’-メチレンビスフェノールと2,4’-メチレンビスフェノールと2,2’-メチレンビスフェノールとを重量比で2:3:1で含む)72重量部、1,6-ヘキサンジオールジグリシジルエーテル70重量部、及びビスフェノールF型エポキシ樹脂(DIC社製「EPICLON EXA-830CRP」)30重量部を、3つ口フラスコに入れ、窒素フロー下にて、150℃で溶解させた。その後、水酸基とエポキシ基の付加反応触媒であるテトラーn-ブチルスルホニウムブロミド0.1重量部を添加し、窒素フロー下にて、150℃で6時間、付加重合反応させることにより、反応物(ポリマーA)を得た。
Polymer A:
Synthesis of reaction product (polymer A) of bisphenol F with 1,6-hexanediol diglycidyl ether and bisphenol F type epoxy resin:
72 parts by weight of bisphenol F (containing 4,4′-methylene bisphenol, 2,4′-methylene bisphenol and 2,2′-methylene bisphenol in a weight ratio of 2: 3: 1), 1,6-hexanediol 70 parts by weight of glycidyl ether and 30 parts by weight of bisphenol F type epoxy resin (“EPICLON EXA-830CRP” manufactured by DIC) were placed in a three-necked flask and dissolved at 150 ° C. under a nitrogen flow. Thereafter, 0.1 part by weight of tetra-n-butylsulfonium bromide, which is a catalyst for addition reaction of a hydroxyl group and an epoxy group, was added, and an addition polymerization reaction was performed at 150 ° C. for 6 hours under a nitrogen flow to obtain a reactant (polymer). A) was obtained.
 NMRにより、付加重合反応が進行したことを確認して、反応物(ポリマーA)が、ビスフェノールFに由来する水酸基と1,6-ヘキサンジオールジグリシジルエーテル、及びビスフェノールF型エポキシ樹脂のエポキシ基とが結合した構造単位を主鎖に有し、かつエポキシ基を両末端に有することを確認した。 By confirming that the addition polymerization reaction has progressed by NMR, the reaction product (Polymer A) contains a hydroxyl group derived from bisphenol F, 1,6-hexanediol diglycidyl ether, and an epoxy group of bisphenol F type epoxy resin. It was confirmed that it has a structural unit bonded to the main chain and has an epoxy group at both ends.
 GPCにより得られた反応物(ポリマーA)の重量平均分子量は10000、数平均分子量は3500であった。 The weight average molecular weight of the reaction product (polymer A) obtained by GPC was 10,000, and the number average molecular weight was 3,500.
Figure JPOXMLDOC01-appb-C000001
Figure JPOXMLDOC01-appb-C000001
 ポリマーB:両末端エポキシ基剛直骨格フェノキシ樹脂、三菱化学社製「YX6900BH45」、重量平均分子量16000 Polymer B: both ends epoxy group rigid skeleton phenoxy resin, “YX6900BH45” manufactured by Mitsubishi Chemical Corporation, weight average molecular weight 16000
 熱硬化性化合物1:レゾルシノール型エポキシ化合物、ナガセケムテックス社製「EX-201」、低温で結晶化した後に洗浄して使用 Thermosetting compound 1: Resorcinol type epoxy compound, “EX-201” manufactured by Nagase ChemteX Corporation, washed after crystallization at low temperature
 熱硬化性化合物2:ビスフェノールF型エポキシ樹脂、DIC社製「EPICLON EXA-830CRP」、低温で結晶化した後に洗浄して使用 Thermosetting compound 2: Bisphenol F type epoxy resin, “EPICLON EXA-830CRP” manufactured by DIC, used after being crystallized at low temperature
 熱硬化剤1:ペンタエリスリトールテトラキス(3-メルカプトブチレート)、昭和電工社製「カレンズMT PE1」 Thermosetting agent 1: Pentaerythritol tetrakis (3-mercaptobutyrate), “Karenz MT PE1” manufactured by Showa Denko KK
 潜在性エポキシ熱硬化剤1:T&K TOKA社製「フジキュア7000」 Latent epoxy thermosetting agent 1: T & K TOKA's “Fujicure 7000”
 フラックス1:アジピン酸、和光純薬工業社製、融点(活性温度)152℃ Flux 1: Adipic acid, manufactured by Wako Pure Chemical Industries, Ltd., melting point (activation temperature) 152 ° C.
 フラックス2:コハク酸、和光純薬工業社製、融点(活性温度)186℃ Flux 2: Succinic acid, manufactured by Wako Pure Chemical Industries, Ltd., melting point (active temperature) 186 ° C.
 フラックス3:アビエチン酸、和光純薬工業社製、融点(活性温度)174℃ Flux 3: Abietic acid, manufactured by Wako Pure Chemical Industries, Ltd., melting point (activation temperature) 174 ° C.
 はんだ粒子1(SnBiはんだ粒子、融点139℃、三井金属社製「DS10」)を以下の表面処理した粒子、平均粒子径13μm) Solder particles 1 (SnBi solder particles, melting point 139 ° C., “DS10” manufactured by Mitsui Kinzoku Co., Ltd.) are subjected to the following surface treatment, average particle diameter 13 μm)
 はんだ粒子の表面処理:
 はんだ粒子200g、アジピン酸40g、及びアセトン70gを3つ口フラスコに秤量し、はんだ粒子の表面の水酸基とアジピン酸のカルボキシル基との脱水縮合触媒であるジブチル錫オキサイド0.3gを添加し、60℃で4時間反応させた。その後、はんだ粒子をろ過することで回収した。
Surface treatment of solder particles:
200 g of solder particles, 40 g of adipic acid, and 70 g of acetone are weighed in a three-necked flask, and 0.3 g of dibutyltin oxide, which is a dehydration condensation catalyst between the hydroxyl groups of the solder particles and the carboxyl groups of adipic acid, is added. The reaction was carried out at 4 ° C for 4 hours. Thereafter, the solder particles were collected by filtration.
 回収したはんだ粒子と、アジピン酸50gと、トルエン200gと、パラトルエンスルホン酸0.3gとを、3つ口フラスコに秤量し、真空引き、及び還流を行いながら、120℃で、3時間反応させた。この際、ディーンスターク抽出装置を用いて、脱水縮合により生成した水を除去しながら反応させた。 The collected solder particles, 50 g of adipic acid, 200 g of toluene, and 0.3 g of para-toluenesulfonic acid are weighed in a three-necked flask and allowed to react at 120 ° C. for 3 hours while evacuating and refluxing. It was. At this time, the reaction was carried out while removing water produced by dehydration condensation using a Dean-Stark extraction device.
 その後、ろ過によりはんだ粒子を回収し、ヘキサンにて洗浄し、乾燥した。その後、得られたはんだ粒子をボールミルで解砕後、所定のCV値となるように篩を選択した。得られたはんだ粒子は、外表面にカルボキシル基が存在するように表面処理されていた。 Thereafter, the solder particles were collected by filtration, washed with hexane, and dried. Thereafter, the obtained solder particles were crushed with a ball mill, and then a sieve was selected so as to obtain a predetermined CV value. The obtained solder particles were surface-treated so that carboxyl groups were present on the outer surface.
 はんだ粒子2(SnBiはんだ粒子、融点139℃、三井金属社製「DS30」)をはんだ粒子1と同様に表面処理した粒子、平均粒子径32μm Solder particles 2 (SnBi solder particles, melting point 139 ° C., “DS30” manufactured by Mitsui Kinzoku Co., Ltd.) surface-treated in the same manner as the solder particles 1, average particle diameter 32 μm
 導電性粒子1:樹脂粒子の表面上に厚み1μmの銅層が形成されており、該銅層の表面に厚み3μmのはんだ層(錫:ビスマス=43重量%:57重量%)が形成されている導電性粒子 Conductive particles 1: a copper layer having a thickness of 1 μm is formed on the surface of the resin particles, and a solder layer having a thickness of 3 μm (tin: bismuth = 43 wt%: 57 wt%) is formed on the surface of the copper layer. Conductive particles
 フェノキシ樹脂(新日鉄住金化学社製「YP-50S」) Phenoxy resin (“YP-50S” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.)
 (実施例1~4,6~9)
 (1)異方性導電ペーストの作製
 下記の表1に示す成分を下記の表1に示す配合量で配合して、異方性導電ペーストを得た。なお、得られた異方性導電ペーストにおいて、熱硬化性化合物は粒子状に分散していた。
(Examples 1 to 4, 6 to 9)
(1) Preparation of anisotropic conductive paste The components shown in Table 1 below were blended in the blending amounts shown in Table 1 to obtain anisotropic conductive paste. In the anisotropic conductive paste obtained, the thermosetting compound was dispersed in the form of particles.
 (2)第1の接続構造体(L/S=50μm/50μm)の作製
 L/Sが50μm/50μmの銅電極パターン(銅電極厚み10μm)を上面に有するガラスエポキシ基板(FR-4基板)(第1の接続対象部材)を用意した。また、L/Sが50μm/50μmの銅電極パターン(銅電極厚み10μm)を下面に有するフレキシブルプリント基板(第2の接続対象部材)を用意した。
(2) Production of first connection structure (L / S = 50 μm / 50 μm) Glass epoxy substrate (FR-4 substrate) having a copper electrode pattern (copper electrode thickness 10 μm) having an L / S of 50 μm / 50 μm on the upper surface (First connection object member) was prepared. Moreover, the flexible printed circuit board (2nd connection object member) which has a copper electrode pattern (copper electrode thickness 10 micrometers) whose L / S is 50 micrometers / 50 micrometers on the lower surface was prepared.
 ガラスエポキシ基板とフレキシブル基板との重ね合わせ面積は、1.5cm×4mmとし、接続した電極数は75対とした。 The overlapping area of the glass epoxy substrate and the flexible substrate was 1.5 cm × 4 mm, and the number of connected electrodes was 75 pairs.
 上記ガラスエポキシ基板の上面に、作製直後の異方性導電ペーストを厚さ50μmとなるように塗工し、異方性導電ペースト層を形成した。次に、異方性導電ペースト層の上面に上記フレキシブルプリント基板を、電極同士が対向するように積層した。このとき、加圧を行わなかった。異方性導電ペースト層には、上記フレキシブルプリント基板の重量は加わる。その後、異方性導電ペースト層の温度が190℃となるように加熱しながら、はんだを溶融させ、かつ異方性導電ペースト層を190℃で硬化させ、第1の接続構造体を得た。 The anisotropic conductive paste immediately after fabrication was applied to the upper surface of the glass epoxy substrate so as to have a thickness of 50 μm to form an anisotropic conductive paste layer. Next, the flexible printed circuit board was laminated on the upper surface of the anisotropic conductive paste layer so that the electrodes face each other. At this time, no pressure was applied. The weight of the flexible printed board is added to the anisotropic conductive paste layer. Thereafter, while heating the anisotropic conductive paste layer to 190 ° C., the solder was melted and the anisotropic conductive paste layer was cured at 190 ° C. to obtain a first connection structure.
 (3)第2の接続構造体(L/S=75μm/75μm)の作製
 L/Sが75μm/75μmの銅電極パターン(銅電極厚み10μm)を上面に有するガラスエポキシ基板(FR-4基板)(第1の接続対象部材)を用意した。また、L/Sが75μm/75μmの銅電極パターン(銅電極厚み10μm)を下面に有するフレキシブルプリント基板(第2の接続対象部材)を用意した。
(3) Production of second connection structure (L / S = 75 μm / 75 μm) Glass epoxy substrate (FR-4 substrate) having a copper electrode pattern (copper electrode thickness 10 μm) having L / S of 75 μm / 75 μm on the upper surface (First connection object member) was prepared. Moreover, the flexible printed circuit board (2nd connection object member) which has a copper electrode pattern (copper electrode thickness 10 micrometers) whose L / S is 75 micrometers / 75 micrometers on the lower surface was prepared.
 L/Sが異なる上記ガラスエポキシ基板及びフレキシブルプリント基板を用いたこと以外は第1の接続構造体の作製と同様にして、第2の接続構造体を得た。 2nd connection structure was obtained like manufacture of the 1st connection structure except having used the above-mentioned glass epoxy board and flexible printed circuit board from which L / S differs.
 (4)第3の接続構造体(L/S=100μm/100μm)の作製
 L/Sが100μm/100μmの銅電極パターン(銅電極厚み10μm)を上面に有するガラスエポキシ基板(FR-4基板)(第1の接続対象部材)を用意した。また、L/Sが100μm/100μmの銅電極パターン(銅電極厚み10μm)を下面に有するフレキシブルプリント基板(第2の接続対象部材)を用意した。
(4) Production of third connection structure (L / S = 100 μm / 100 μm) Glass epoxy substrate (FR-4 substrate) having a copper electrode pattern (copper electrode thickness 10 μm) with L / S of 100 μm / 100 μm on the upper surface (First connection object member) was prepared. Moreover, the flexible printed circuit board (2nd connection object member) which has a copper electrode pattern (copper electrode thickness 10 micrometers) whose L / S is 100 micrometers / 100 micrometers on the lower surface was prepared.
 L/Sが異なる上記ガラスエポキシ基板及びフレキシブルプリント基板を用いたこと以外は第1の接続構造体の作製と同様にして、第3の接続構造体を得た。 3rd connection structure was obtained like manufacture of the 1st connection structure except having used the above-mentioned glass epoxy board and flexible printed circuit board from which L / S differs.
 (実施例5)
 電極サイズ(L)/電極間スペース(S)が、100μm/100μm(第3の接続構造体用)、75μm/75μm(第2の接続構造体用)、50μm/50μm(第1の接続構造体用)である、5mm角の半導体チップ(厚み400μm)と、それに対向する電極を有するガラスエポキシ基板(サイズ30×30mm、厚み0.4mm)とを用意した。半導体チップ及びガラスエポキシ基板を用いたいこと以外は実施例1と同様にして、第1,第2,第3の接続構造体を得た。
(Example 5)
Electrode size (L) / inter-electrode space (S) is 100 μm / 100 μm (for the third connection structure), 75 μm / 75 μm (for the second connection structure), 50 μm / 50 μm (first connection structure) 5 mm square semiconductor chip (thickness 400 μm) and a glass epoxy substrate (size 30 × 30 mm, thickness 0.4 mm) having electrodes facing it. First, second, and third connection structures were obtained in the same manner as in Example 1 except that a semiconductor chip and a glass epoxy substrate were used.
 (比較例1,2,5)
 (1)異方性導電ペーストの作製
 下記の表2に示す成分を下記の表2に示す配合量で配合して、異方性導電ペーストを得た。得られた異方性導電ペーストを用いたこと以外は実施例1と同様にして、第1,第2,第3の接続構造体を得た。
(Comparative Examples 1, 2, 5)
(1) Preparation of anisotropic conductive paste The components shown in Table 2 below were blended in the blending amounts shown in Table 2 to obtain anisotropic conductive paste. First, second, and third connection structures were obtained in the same manner as in Example 1 except that the obtained anisotropic conductive paste was used.
 (比較例3)
 フェノキシ樹脂(新日鉄住金化学社製「YP-50S」)10重量部をメチルエチルケトン(MEK)に固形分が50重量%となるように溶解させて、溶解液を得た。下記の表2に示すフェノキシ樹脂を除く成分を下記の表2に示す配合量と、上記溶解液の全量とを配合して、遊星式攪拌機を用いて2000rpmで5分間攪拌した後、バーコーターを用いて乾燥後の厚みが30μmになるよう離型PET(ポリエチレンテレフタレート)フィルム上に塗工した。室温で真空乾燥することで、MEKを除去することにより、異方性導電フィルムを得た。
(Comparative Example 3)
10 parts by weight of phenoxy resin (“YP-50S” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) was dissolved in methyl ethyl ketone (MEK) so that the solid content was 50% by weight to obtain a solution. Ingredients other than the phenoxy resin shown in Table 2 below were blended with the blending amounts shown in Table 2 below and the total amount of the above solution, and after stirring for 5 minutes at 2000 rpm using a planetary stirrer, a bar coater was used. It was coated on a release PET (polyethylene terephthalate) film so that the thickness after drying was 30 μm. An anisotropic conductive film was obtained by removing MEK by vacuum drying at room temperature.
 異方性導電フィルムを用いたこと以外は実施例1と同様にして、第1,第2,第3の接続構造体を得た。 The 1st, 2nd, 3rd connection structure was obtained like Example 1 except having used an anisotropic conductive film.
 (比較例4)
 電極サイズ(L)/電極間スペース(S)が、100μm/100μm(第3の接続構造体用)、75μm/75μm(第2の接続構造体用)、50μm/50μm(第1の接続構造体用)である、5mm角の半導体チップ(厚み400μm)と、それに対向する電極を有するガラスエポキシ基板(サイズ30×30mm厚み0.4mm)とを用意した。この半導体チップ及びガラスエポキシ基板を用いたいこと以外は比較例1と同様にして、第1,第2,第3の接続構造体を得た。
(Comparative Example 4)
Electrode size (L) / inter-electrode space (S) is 100 μm / 100 μm (for the third connection structure), 75 μm / 75 μm (for the second connection structure), 50 μm / 50 μm (first connection structure) 5 mm square semiconductor chip (thickness 400 μm) and a glass epoxy substrate (size 30 × 30 mm thickness 0.4 mm) having electrodes facing it. The first, second, and third connection structures were obtained in the same manner as in Comparative Example 1 except that this semiconductor chip and glass epoxy substrate were used.
 (評価)
 (1)粘度
 異方性導電ペーストの25℃での粘度η1を、E型粘度計(東機産業社製)を用いて、25℃及び5rpmの条件で測定した。また、異方性導電ペーストのフラックスの融点での粘度η2を、E型粘度計(東機産業社製)を用いて、フラックスの融点及び5rpmの条件で測定した。また、異方性導電ペーストのはんだ粒子の融点での粘度η3を、E型粘度計(東機産業社製)を用いて、はんだ粒子の融点及び5rpmの条件で測定した。得られた測定値から比(η1/η2)、比(η1/η3)、及び比(η2/η3)を求めた。
(Evaluation)
(1) Viscosity The viscosity η1 at 25 ° C. of the anisotropic conductive paste was measured under the conditions of 25 ° C. and 5 rpm using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.). Further, the viscosity η2 at the melting point of the flux of the anisotropic conductive paste was measured using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.) under the condition of the melting point of the flux and 5 rpm. Further, the viscosity η3 at the melting point of the solder particles of the anisotropic conductive paste was measured using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.) under the condition of the melting point of the solder particles and 5 rpm. The ratio (η1 / η2), the ratio (η1 / η3), and the ratio (η2 / η3) were determined from the obtained measured values.
 (2)接続部の距離(電極間の間隔)
 得られた第1の接続構造体を断面観察することにより、上下の電極が対向している位置における接続部の距離D1(電極間の間隔)を評価した。
(2) Connection distance (inter-electrode spacing)
By observing a cross section of the obtained first connection structure, the distance D1 (interval between electrodes) of the connection portion at the position where the upper and lower electrodes face each other was evaluated.
 (3)電極上のはんだの配置精度
 得られた第1の接続構造体の断面(図1に示す方向の断面)において、はんだの全面積100%中、電極間に配置されたはんだ部から離れて硬化物中に残存しているはんだの面積(%)を評価した。なお、5つの断面における面積の平均を算出した。電極上のはんだの配置精度を下記の基準で判定した。
(3) Solder placement accuracy on electrodes In the cross section (cross section in the direction shown in FIG. 1) of the obtained first connection structure, it is separated from the solder portion disposed between the electrodes in 100% of the total area of the solder. Thus, the area (%) of the solder remaining in the cured product was evaluated. In addition, the average of the area in five cross sections was computed. The placement accuracy of the solder on the electrode was determined according to the following criteria.
 [電極上の導電性粒子の配置精度の判定基準]
 ○○:断面に現われているはんだの全面積100%中、電極間に配置されたはんだ部から離れて硬化物中に残存しているはんだ(はんだ粒子)の面積が0%以上、1%以下
 ○:断面に現われているはんだの全面積100%中、電極間に配置されたはんだ部から離れて硬化物中に残存しているはんだ(はんだ粒子)の面積が1%を超え、10%以下
 △:断面に現われているはんだの全面積100%中、電極間に配置されたはんだ部から離れて硬化物中に残存しているはんだ(はんだ粒子)の面積が10%を超え、30%以下
 ×:断面に現われているはんだの全面積100%中、電極間に配置されたはんだ部から離れて硬化物中に残存しているはんだ(はんだ粒子)の面積が30%を超える
[Judgment criteria for placement accuracy of conductive particles on electrode]
OO: The area of the solder (solder particles) remaining in the cured product away from the solder portion arranged between the electrodes in the total area of 100% of the solder appearing in the cross section is 0% or more and 1% or less ○: Out of 100% of the total area of the solder appearing in the cross section, the area of the solder (solder particles) remaining in the cured product away from the solder portion disposed between the electrodes exceeds 1% and is 10% or less Δ: The area of the solder (solder particles) remaining in the cured product away from the solder portion arranged between the electrodes exceeds 100% in the total area of 100% of the solder appearing in the cross section, and is 30% or less X: Out of the total area of 100% of the solder appearing in the cross section, the area of the solder (solder particles) remaining in the cured product away from the solder portion disposed between the electrodes exceeds 30%
 (4)上下の電極間の導通信頼性
 得られた第1,第2,第3の接続構造体(n=15個)において、上下の電極間の接続抵抗をそれぞれ、4端子法により測定した。接続抵抗の平均値を算出した。なお、電圧=電流×抵抗の関係から、一定の電流を流した時の電圧を測定することにより接続抵抗を求めることができる。導通信頼性を下記の基準で判定した。
(4) Connection reliability between upper and lower electrodes In the obtained first, second and third connection structures (n = 15), the connection resistance between the upper and lower electrodes was measured by the four-terminal method, respectively. . The average value of connection resistance was calculated. Note that the connection resistance can be obtained by measuring the voltage when a constant current is passed from the relationship of voltage = current × resistance. The conduction reliability was determined according to the following criteria.
 [導通信頼性の判定基準]
 ○○:接続抵抗の平均値が8.0Ω以下
 ○:接続抵抗の平均値が8.0Ωを超え、10.0Ω以下
 △:接続抵抗の平均値が10.0Ωを超え、15.0Ω以下
 ×:接続抵抗の平均値が15.0Ωを超える
[Judgment criteria for conduction reliability]
○○: Average value of connection resistance is 8.0Ω or less ○: Average value of connection resistance exceeds 8.0Ω and 10.0Ω or less △: Average value of connection resistance exceeds 10.0Ω and 15.0Ω or less × : Average connection resistance exceeds 15.0Ω
 (5)隣接する電極間の絶縁信頼性
 得られた第1,第2,第3の接続構造体(n=15個)において、温度85℃、及び湿度85%の雰囲気中に100時間放置後、隣接する電極間に、5Vを印加し、抵抗値を25箇所で測定した。絶縁信頼性を下記の基準で判定した。
(5) Insulation reliability between adjacent electrodes After the first, second, and third connection structures (n = 15) obtained were left in an atmosphere of 85 ° C. and 85% humidity for 100 hours. 5V was applied between the adjacent electrodes, and the resistance value was measured at 25 locations. Insulation reliability was judged according to the following criteria.
 [絶縁信頼性の判定基準]
 ○○:接続抵抗の平均値が10Ω以上
 ○:接続抵抗の平均値が10Ω以上、10Ω未満
 △:接続抵抗の平均値が10Ω以上、10Ω未満
 ×:接続抵抗の平均値が10Ω未満
[Criteria for insulation reliability]
◯: Average value of connection resistance is 10 7 Ω or more ○: Average value of connection resistance is 10 6 Ω or more, less than 10 7 Ω △: Average value of connection resistance is 10 5 Ω or more, less than 10 6 Ω ×: Connection The average resistance is less than 10 5 Ω
 結果を下記の表1,2に示す。 The results are shown in Tables 1 and 2 below.
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000003
Figure JPOXMLDOC01-appb-T000003
 実施例1と比較例1との結果の差異と、実施例5と比較例4の結果との差異から、第2の接続対象部材がフレキシブルプリント基板である場合に、第2の接続対象部材が半導体チップである場合と比べて、本発明の導電ペーストの使用による導通信頼性の向上効果がより一層効果的に得られることがわかる。 From the difference between the results of Example 1 and Comparative Example 1 and the difference between the results of Example 5 and Comparative Example 4, when the second connection target member is a flexible printed circuit board, the second connection target member is It can be seen that the effect of improving the conduction reliability by using the conductive paste of the present invention can be obtained more effectively than in the case of a semiconductor chip.
 フレキシブルプリント基板にかえて、樹脂フィルム、フレキシブルフラットケーブル及びリジッドフレキシブル基板を用いた場合でも、同様の結果が得られることを確認した。 It was confirmed that the same results were obtained even when a resin film, a flexible flat cable, and a rigid flexible substrate were used instead of the flexible printed substrate.
 さらに、図4(a),(b)及び(c)に、本発明の実施形態に含まれない導電ペーストを用いた接続構造体の一例を示した。図4(a)及び(b)は断面画像であり、図4(c)は平面画像である。図4(a),(b),(c)では、電極間に配置されたはんだ部から離れて硬化物中に残存しているはんだ(はんだ粒子)が、はんだ部の側方に複数存在していることがわかる。これに対して、本発明では、電極間に配置されたはんだ部から離れて硬化物中に残存しているはんだ(はんだ粒子)が存在しないようにすることができる。 Further, FIGS. 4A, 4B and 4C show an example of a connection structure using a conductive paste not included in the embodiment of the present invention. 4A and 4B are cross-sectional images, and FIG. 4C is a planar image. 4A, 4B, and 4C, a plurality of solders (solder particles) remaining in the cured product away from the solder portions disposed between the electrodes exist on the side of the solder portions. You can see that On the other hand, in this invention, it can avoid that the solder (solder particle | grains) which remain | separated from the solder part arrange | positioned between electrodes and remain | survived in hardened | cured material does not exist.
 1,1X…接続構造体
 2…第1の接続対象部材
 2a…第1の電極
 3…第2の接続対象部材
 3a…第2の電極
 4,4X…接続部
 4A,4XA…はんだ部
 4B,4XB…硬化物部
 11…導電ペースト
 11A…はんだ粒子
 11B…熱硬化性成分
DESCRIPTION OF SYMBOLS 1,1X ... Connection structure 2 ... 1st connection object member 2a ... 1st electrode 3 ... 2nd connection object member 3a ... 2nd electrode 4, 4X ... Connection part 4A, 4XA ... Solder part 4B, 4XB ... Cured part 11 ... Conductive paste 11A ... Solder particles 11B ... Thermosetting component

Claims (12)

  1.  熱硬化性成分と、フラックスと、複数のはんだ粒子とを含み、
     前記フラックスの融点での粘度が0.1Pa・s以上、3Pa・s以下であり、
     前記はんだ粒子の融点での粘度が0.1Pa・s以上、5Pa・s以下である、導電ペースト。
    Including a thermosetting component, a flux, and a plurality of solder particles;
    The viscosity at the melting point of the flux is 0.1 Pa · s or more and 3 Pa · s or less,
    The electrically conductive paste whose viscosity in melting | fusing point of the said solder particle is 0.1 Pa.s or more and 5 Pa.s or less.
  2.  前記フラックスの融点が80℃以上、190℃以下である、請求項1に記載の導電ペースト。 The conductive paste according to claim 1, wherein the melting point of the flux is 80 ° C or higher and 190 ° C or lower.
  3.  前記フラックスの融点が100℃以上、190℃以下である、請求項2に記載の導電ペースト。 The conductive paste according to claim 2, wherein the melting point of the flux is 100 ° C or higher and 190 ° C or lower.
  4.  導電ペースト100重量%中、前記フラックスの含有量が0.1重量%以上、5重量%以下である、請求項1~3のいずれか1項に記載の導電ペースト。 The conductive paste according to any one of claims 1 to 3, wherein the content of the flux is 0.1 wt% or more and 5 wt% or less in 100 wt% of the conductive paste.
  5.  フィラーを含まないか、又は、フィラーを導電ペースト100重量%中に0.25重量%未満で含む、請求項1~4のいずれか1項に記載の導電ペースト。 The conductive paste according to any one of claims 1 to 4, which does not contain a filler or contains the filler in less than 0.25% by weight in 100% by weight of the conductive paste.
  6.  前記はんだ粒子は、外表面にカルボキシル基が存在するように表面処理されている、請求項1~5のいずれか1項に記載の導電ペースト。 The conductive paste according to any one of claims 1 to 5, wherein the solder particles are surface-treated so that carboxyl groups are present on the outer surface.
  7.  前記フラックスの融点が、前記はんだ粒子の融点よりも高い、請求項1~6のいずれか1項に記載の導電ペースト。 The conductive paste according to any one of claims 1 to 6, wherein a melting point of the flux is higher than a melting point of the solder particles.
  8.  少なくとも1つの第1の電極を表面に有する第1の接続対象部材と、
     少なくとも1つの第2の電極を表面に有する第2の接続対象部材と、
     前記第1の接続対象部材と、前記第2の接続対象部材とを接続している接続部とを備え、
     前記接続部が、請求項1~7のいずれか1項に記載の導電ペーストにより形成されており、
     前記第1の電極と前記第2の電極とが、前記接続部中のはんだ部により電気的に接続されている、接続構造体。
    A first connection target member having at least one first electrode on its surface;
    A second connection target member having at least one second electrode on its surface;
    A connecting portion connecting the first connection target member and the second connection target member;
    The connection part is formed of the conductive paste according to any one of claims 1 to 7,
    A connection structure in which the first electrode and the second electrode are electrically connected by a solder portion in the connection portion.
  9.  前記第2の接続対象部材が、樹脂フィルム、フレキシブルプリント基板、リジッドフレキシブル基板又はフレキシブルフラットケーブルである、請求項8に記載の接続構造体。 The connection structure according to claim 8, wherein the second connection target member is a resin film, a flexible printed board, a rigid flexible board, or a flexible flat cable.
  10.  請求項1~7のいずれか1項に記載の導電ペーストを用いて、少なくとも1つの第1の電極を表面に有する第1の接続対象部材の表面上に、前記導電ペーストを配置する工程と、
     前記導電ペーストの前記第1の接続対象部材側とは反対の表面上に、少なくとも1つの第2の電極を表面に有する第2の接続対象部材を、前記第1の電極と前記第2の電極とが対向するように配置する工程と、
     前記はんだ粒子の融点以上かつ前記熱硬化性成分の硬化温度以上に前記導電ペーストを加熱することで、前記第1の接続対象部材と前記第2の接続対象部材とを接続している接続部を、前記導電ペーストにより形成し、かつ、前記第1の電極と前記第2の電極とを、前記接続部中のはんだ部により電気的に接続する工程とを備える、接続構造体の製造方法。
    Using the conductive paste according to any one of claims 1 to 7, disposing the conductive paste on a surface of a first connection target member having at least one first electrode on the surface;
    On the surface opposite to the first connection target member side of the conductive paste, a second connection target member having at least one second electrode on the surface, the first electrode and the second electrode And a step of arranging so as to face each other,
    By connecting the first connection target member and the second connection target member by heating the conductive paste above the melting point of the solder particles and above the curing temperature of the thermosetting component, And a step of electrically connecting the first electrode and the second electrode with a solder portion in the connection portion, the method comprising: forming the conductive paste;
  11.  前記第2の接続対象部材を配置する工程及び前記接続部を形成する工程において、加圧を行わず、前記導電ペーストには、前記第2の接続対象部材の重量が加わる、請求項10に記載の接続構造体の製造方法。 The weight of the second connection target member is added to the conductive paste without applying pressure in the step of arranging the second connection target member and the step of forming the connection part. Method for manufacturing the connection structure of the present invention.
  12.  前記第2の接続対象部材が、樹脂フィルム、フレキシブルプリント基板、リジッドフレキシブル基板又はフレキシブルフラットケーブルである、請求項10又は11に記載の接続構造体の製造方法。 The method for manufacturing a connection structure according to claim 10 or 11, wherein the second connection target member is a resin film, a flexible printed board, a rigid flexible board, or a flexible flat cable.
PCT/JP2015/065905 2014-06-05 2015-06-02 Conductive paste, connected structure and method for producing connected structure WO2015186704A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020167015288A KR102392995B1 (en) 2014-06-05 2015-06-02 Conductive paste, connected structure and method for producing connected structure
JP2015528740A JP5860191B1 (en) 2014-06-05 2015-06-02 Conductive paste, connection structure, and manufacturing method of connection structure
CN201580004070.7A CN105900180B (en) 2014-06-05 2015-06-02 The manufacturing method of conductive paste, connection structural bodies and connection structural bodies

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-116583 2014-06-05
JP2014116583 2014-06-05

Publications (1)

Publication Number Publication Date
WO2015186704A1 true WO2015186704A1 (en) 2015-12-10

Family

ID=54766773

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2015/065905 WO2015186704A1 (en) 2014-06-05 2015-06-02 Conductive paste, connected structure and method for producing connected structure

Country Status (5)

Country Link
JP (2) JP5860191B1 (en)
KR (1) KR102392995B1 (en)
CN (1) CN105900180B (en)
TW (1) TWI670729B (en)
WO (1) WO2015186704A1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017033930A1 (en) * 2015-08-24 2017-03-02 積水化学工業株式会社 Electroconductive material and connection structure
JP2017112312A (en) * 2015-12-18 2017-06-22 日立化成株式会社 Conductive adhesive composition, connection structure, and semiconductor light emitting element mounting flexible wiring board
JP2019050347A (en) * 2017-09-08 2019-03-28 株式会社タムラ製作所 Method for manufacturing electronic substrate and anisotropic conductive paste
JP2020188268A (en) * 2015-12-18 2020-11-19 昭和電工マテリアルズ株式会社 Conductive adhesive composition, connection structure, and semiconductor light emitting element mounting flexible wiring board
JP2022160604A (en) * 2020-07-14 2022-10-19 昭和電工マテリアルズ株式会社 Conductive adhesive composition, connection structure, and semiconductor light emitting element mounting flexible wiring board
JP7389657B2 (en) 2020-01-21 2023-11-30 積水化学工業株式会社 Conductive paste and connection structure

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101820468B1 (en) * 2016-11-21 2018-01-19 ㈜ 엘프스 Self-assembled conductive bonding Paste
JP7184759B2 (en) * 2017-12-22 2022-12-06 積水化学工業株式会社 Conductive material, method for storing conductive material, method for manufacturing conductive material, and method for manufacturing connection structure

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004108345A1 (en) * 2003-06-09 2004-12-16 Senju Metal Industry Co., Ltd. Solder paste
JP2006035259A (en) * 2004-07-27 2006-02-09 Denso Corp Solder paste
WO2010027017A1 (en) * 2008-09-05 2010-03-11 住友ベークライト株式会社 Electroconductive connecting material, method for connecting terminals to each other using the electroconductive connecting material, and method for manufacturing connecting terminal
WO2010052871A1 (en) * 2008-11-06 2010-05-14 住友ベークライト株式会社 Electronic device manufacturing method and electronic device
WO2011158666A1 (en) * 2010-06-15 2011-12-22 ソニーケミカル&インフォメーションデバイス株式会社 Process for production of connected structure
JP2012064853A (en) * 2010-09-17 2012-03-29 Sekisui Chem Co Ltd Adhesive for bonding semiconductor element and bonding method of semiconductor element
JP5320523B1 (en) * 2012-02-21 2013-10-23 積水化学工業株式会社 Conductive particle, method for producing conductive particle, conductive material, and connection structure
JP2013235974A (en) * 2012-05-09 2013-11-21 Sekisui Chem Co Ltd Method for manufacturing semiconductor device, and semiconductor bonding adhesive
JP2014078480A (en) * 2012-09-24 2014-05-01 Tamura Seisakusho Co Ltd Anisotropic conductive paste and printed wiring board using the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008023452A1 (en) 2006-08-25 2008-02-28 Sumitomo Bakelite Co., Ltd. Adhesive tape, joint structure, and semiconductor package
JP4669905B2 (en) * 2008-03-27 2011-04-13 積水化学工業株式会社 Conductive particles, anisotropic conductive materials, and connection structures
US8420722B2 (en) * 2008-07-10 2013-04-16 Electronics And Telecommunications Research Institute Composition and methods of forming solder bump and flip chip using the same
KR101420547B1 (en) * 2009-10-15 2014-07-17 히타치가세이가부시끼가이샤 Conductive adhesive, solar cell, method for manufacturing solar cell, and solar cell module
WO2011052615A1 (en) * 2009-10-28 2011-05-05 住友ベークライト株式会社 Conductive connection material and terminal-to-terminal connection method using same
WO2011132658A1 (en) * 2010-04-22 2011-10-27 積水化学工業株式会社 Anisotropic conductive material and connection structure
CN103843469B (en) * 2011-09-30 2017-05-03 株式会社村田制作所 Electronic device, joining material, and method for producing electronic device
JP5613220B2 (en) * 2011-12-20 2014-10-22 積水化学工業株式会社 Electronic component connection material and connection structure
JP2013251366A (en) * 2012-05-31 2013-12-12 Sony Corp Manufacturing method of assembly, assembly, and electronic apparatus
CN104380392B (en) * 2012-07-03 2016-11-23 积水化学工业株式会社 The electroconductive particle of tape insulation particle, conductive material and connection structural bodies
JP6112797B2 (en) * 2012-07-30 2017-04-12 国立大学法人大阪大学 Electronic component mounting method, circuit board manufacturing method, electronic component solder joint formation method, printed wiring board with connection layer, and sheet-like joining member
JP2014056816A (en) * 2012-08-10 2014-03-27 Sekisui Chem Co Ltd Conductive material and connection structure

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004108345A1 (en) * 2003-06-09 2004-12-16 Senju Metal Industry Co., Ltd. Solder paste
JP2006035259A (en) * 2004-07-27 2006-02-09 Denso Corp Solder paste
WO2010027017A1 (en) * 2008-09-05 2010-03-11 住友ベークライト株式会社 Electroconductive connecting material, method for connecting terminals to each other using the electroconductive connecting material, and method for manufacturing connecting terminal
WO2010052871A1 (en) * 2008-11-06 2010-05-14 住友ベークライト株式会社 Electronic device manufacturing method and electronic device
WO2011158666A1 (en) * 2010-06-15 2011-12-22 ソニーケミカル&インフォメーションデバイス株式会社 Process for production of connected structure
JP2012064853A (en) * 2010-09-17 2012-03-29 Sekisui Chem Co Ltd Adhesive for bonding semiconductor element and bonding method of semiconductor element
JP5320523B1 (en) * 2012-02-21 2013-10-23 積水化学工業株式会社 Conductive particle, method for producing conductive particle, conductive material, and connection structure
JP2013235974A (en) * 2012-05-09 2013-11-21 Sekisui Chem Co Ltd Method for manufacturing semiconductor device, and semiconductor bonding adhesive
JP2014078480A (en) * 2012-09-24 2014-05-01 Tamura Seisakusho Co Ltd Anisotropic conductive paste and printed wiring board using the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017033930A1 (en) * 2015-08-24 2017-03-02 積水化学工業株式会社 Electroconductive material and connection structure
JP2017112312A (en) * 2015-12-18 2017-06-22 日立化成株式会社 Conductive adhesive composition, connection structure, and semiconductor light emitting element mounting flexible wiring board
JP2020188268A (en) * 2015-12-18 2020-11-19 昭和電工マテリアルズ株式会社 Conductive adhesive composition, connection structure, and semiconductor light emitting element mounting flexible wiring board
JP7321979B2 (en) 2015-12-18 2023-08-07 株式会社レゾナック CONDUCTIVE ADHESIVE COMPOSITION, CONNECTION STRUCTURE, AND FLEXIBLE WIRING BOARD WITH SEMICONDUCTOR LIGHT EMITTING DEVICE
JP2019050347A (en) * 2017-09-08 2019-03-28 株式会社タムラ製作所 Method for manufacturing electronic substrate and anisotropic conductive paste
JP7389657B2 (en) 2020-01-21 2023-11-30 積水化学工業株式会社 Conductive paste and connection structure
JP2022160604A (en) * 2020-07-14 2022-10-19 昭和電工マテリアルズ株式会社 Conductive adhesive composition, connection structure, and semiconductor light emitting element mounting flexible wiring board
JP7405196B2 (en) 2020-07-14 2023-12-26 株式会社レゾナック Conductive adhesive composition, connection structure, and flexible wiring board with semiconductor light emitting device mounted

Also Published As

Publication number Publication date
TW201606797A (en) 2016-02-16
CN105900180A (en) 2016-08-24
JP5860191B1 (en) 2016-02-16
CN105900180B (en) 2018-07-06
KR102392995B1 (en) 2022-05-02
KR20170016313A (en) 2017-02-13
JPWO2015186704A1 (en) 2017-04-20
JP2016103481A (en) 2016-06-02
TWI670729B (en) 2019-09-01

Similar Documents

Publication Publication Date Title
JP5860191B1 (en) Conductive paste, connection structure, and manufacturing method of connection structure
JP5830196B1 (en) Conductive paste, connection structure, and manufacturing method of connection structure
JP6329144B2 (en) Conductive paste and method for producing conductive paste
JP6577867B2 (en) Conductive paste, connection structure, and manufacturing method of connection structure
JP5819026B1 (en) Method for manufacturing connection structure
JP6557591B2 (en) Conductive film, connection structure, and manufacturing method of connection structure
JP5851071B1 (en) Conductive paste, connection structure, and manufacturing method of connection structure
JP5966101B1 (en) Conductive paste, connection structure, and manufacturing method of connection structure
JP5966102B1 (en) Conductive paste, connection structure, and manufacturing method of connection structure
JP2016126878A (en) Conductive paste, connection structure and method for producing connection structure
JP2016126877A (en) Conductive paste, connection structure and method for producing connection structure
JP6085031B2 (en) Method for manufacturing connection structure
JP2016062768A (en) Manufacturing method of connection structure, and connection structure
WO2016035637A1 (en) Method of manufacturing connection structure
JP2016066610A (en) Manufacturing method of connection structure
JP2016066614A (en) Conductive paste, connection structure and method for producing connection structure
JP2016058389A (en) Manufacturing method of connection structure
JP2016076355A (en) Manufacturing method of connection structure, and connection structure
JP2016066615A (en) Conductive paste, connection structure and method for producing connection structure
JP2016126876A (en) Conductive material, connection structure and method for producing connection structure
JP2016076557A (en) Manufacturing method of connection structure, and connection structure
JP2016076354A (en) Manufacturing method of connection structure, and connection structure

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2015528740

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15803849

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20167015288

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15803849

Country of ref document: EP

Kind code of ref document: A1