WO2015186704A1 - Conductive paste, connected structure and method for producing connected structure - Google Patents
Conductive paste, connected structure and method for producing connected structure Download PDFInfo
- Publication number
- WO2015186704A1 WO2015186704A1 PCT/JP2015/065905 JP2015065905W WO2015186704A1 WO 2015186704 A1 WO2015186704 A1 WO 2015186704A1 JP 2015065905 W JP2015065905 W JP 2015065905W WO 2015186704 A1 WO2015186704 A1 WO 2015186704A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- conductive paste
- solder
- connection
- target member
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/14—Structural association of two or more printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/36—Assembling printed circuits with other printed circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/115—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
- H01L2224/1152—Self-assembly, e.g. self-agglomeration of the bump material in a fluid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
Definitions
- the present invention relates to a conductive paste containing solder particles.
- the present invention also relates to a connection structure using the conductive paste and a method for manufacturing the connection structure.
- Anisotropic conductive materials such as anisotropic conductive paste and anisotropic conductive film are widely known.
- anisotropic conductive material conductive particles are dispersed in a binder resin.
- the anisotropic conductive material may be connected between a flexible printed circuit board and a glass substrate (FOG (Film on Glass)), or connected between a semiconductor chip and a flexible printed circuit board (COF ( (Chip on Film)), connection between a semiconductor chip and a glass substrate (COG (Chip on Glass)), connection between a flexible printed circuit board and a glass epoxy substrate (FOB (Film on Board)), and the like.
- FOG Glass
- COF Chip on Film
- an anisotropic conductive material containing conductive particles is disposed on the glass epoxy substrate. To do.
- a flexible printed circuit board is laminated, and heated and pressurized. As a result, the anisotropic conductive material is cured, and the electrodes are electrically connected via the conductive particles to obtain a connection structure.
- Patent Document 1 includes a resin layer containing a thermosetting resin, solder powder, and a curing agent, and the solder powder and the curing agent include the resin layer.
- An adhesive tape present therein is disclosed. This adhesive tape is in the form of a film, not a paste.
- Patent Document 1 discloses a bonding method using the above-mentioned adhesive tape. Specifically, a first substrate, an adhesive tape, a second substrate, an adhesive tape, and a third substrate are laminated in this order from the bottom to obtain a laminate. At this time, the first electrode provided on the surface of the first substrate is opposed to the second electrode provided on the surface of the second substrate. Moreover, the 2nd electrode provided in the surface of the 2nd board
- the adhesive tape described in Patent Document 1 is a film, not a paste. For this reason, it is difficult to efficiently arrange the solder powder on the electrodes (lines). For example, in the adhesive tape described in Patent Document 1, a part of the solder powder is easily placed in a region (space) where no electrode is formed. Solder powder disposed in a region where no electrode is formed does not contribute to conduction between the electrodes.
- the solder powder may not be efficiently disposed on the electrodes (lines).
- An object of the present invention is to provide a conductive paste that can efficiently arrange solder particles on electrodes and can improve conduction reliability between the electrodes. Moreover, this invention is providing the manufacturing method of the connection structure and connection structure using the said electrically conductive paste.
- the solder includes a thermosetting component, a flux, and a plurality of solder particles, and the viscosity at the melting point of the flux is 0.1 Pa ⁇ s or more and 3 Pa ⁇ s or less.
- a conductive paste is provided in which the viscosity at the melting point of the particles is 0.1 Pa ⁇ s or more and 5 Pa ⁇ s or less.
- the melting point of the flux is 80 ° C. or more and 190 ° C. or less, and in another specific aspect, the melting point of the flux is 100 ° C. or more and 190 ° C. or less.
- the content of the flux is 0.1 wt% or more and 5 wt% or less in 100 wt% of the conductive paste.
- the conductive paste does not contain a filler or contains a filler in less than 0.25% by weight in 100% by weight of the conductive paste.
- the solder particles are surface-treated so that carboxyl groups exist on the outer surface.
- the melting point of the flux is higher than the melting point of the solder particles.
- a first connection target member having at least one first electrode on the surface
- a second connection target member having at least one second electrode on the surface
- the connection part is formed of the above-described conductive paste
- the first electrode and the second electrode A connection structure is provided in which an electrode is electrically connected by a solder portion in the connection portion.
- the first connection target member and the second connection target member are disposed so as to face each other, and by heating the conductive paste to a temperature equal to or higher than the melting point of the solder particles and equal to or higher than the curing temperature of the thermosetting component.
- a step of electrically connecting the first electrode and the second electrode with a solder portion in the connection portion How to manufacture connection structures There is provided.
- connection portion in the step of arranging the second connection target member and the step of forming the connection portion, no pressure is applied, and the conductive paste includes The weight of the second connection target member is added.
- the second connection target member is a resin film, a flexible printed board, a rigid flexible board, or a flexible flat cable.
- the conductive paste according to the present invention includes a thermosetting component, a flux, and a plurality of solder particles, and the viscosity at the melting point of the flux is 0.1 Pa ⁇ s or more and 3 Pa ⁇ s or less. Since the viscosity at the melting point is 0.1 Pa ⁇ s or more and 5 Pa ⁇ s or less, when the electrodes are electrically connected, the solder particles can be efficiently disposed on the electrodes. The conduction reliability can be increased.
- FIG. 1 is a partially cutaway front sectional view schematically showing a connection structure obtained using a conductive paste according to an embodiment of the present invention.
- FIGS. 2A to 2C are diagrams for explaining each step of an example of a method of manufacturing a connection structure using the conductive paste according to the embodiment of the present invention.
- FIG. 3 is a partially cutaway front sectional view showing a modified example of the connection structure.
- FIGS. 4A, 4B, and 4C are images showing an example of a connection structure using a conductive paste that is not included in the embodiment of the present invention.
- FIGS. 4A and 4B are images.
- FIG. 4C is a cross-sectional image
- FIG. 4C is a planar image.
- the conductive paste according to the present invention includes a thermosetting component, a flux, and a plurality of solder particles.
- the viscosity at the melting point of the flux is 0.1 Pa ⁇ s or more and 3 Pa ⁇ s or less.
- the solder particles have a viscosity at the melting point of 0.1 Pa ⁇ s to 5 Pa ⁇ s.
- the conductive paste according to the present invention since the above-described configuration is adopted, when the electrodes are electrically connected, a plurality of solder particles are easily collected between the electrodes, and the plurality of solder particles are placed on the electrodes (lines). Can be arranged efficiently. Moreover, it is difficult for some of the plurality of solder particles to be disposed in a region (space) where no electrode is formed, and the amount of solder particles disposed in a region where no electrode is formed can be considerably reduced. Therefore, the conduction reliability between the electrodes can be improved. In addition, it is possible to prevent electrical connection between laterally adjacent electrodes that should not be connected, and to improve insulation reliability.
- the conductive paste according to the present invention can be suitably used for the following manufacturing method of the connection structure according to the present invention.
- a conductive paste, a first connection target member, and a second connection target member are used.
- the conductive material used in the method for manufacturing a connection structure according to the present invention is not a conductive film but a conductive paste.
- the conductive paste includes a thermosetting component, a flux, and a plurality of solder particles.
- the first connection target member has at least one first electrode on the surface.
- the second connection target member has at least one second electrode on the surface.
- the step of disposing the conductive paste according to the present invention on the surface of the first connection target member, and the first connection target member side of the conductive paste include: On the opposite surface, the step of disposing the second connection object member so that the first electrode and the second electrode face each other, the melting point of the solder particles or higher, and the thermosetting component By heating the conductive paste above the curing temperature, a connection portion connecting the first connection target member and the second connection target member is formed by the conductive paste, and the first And electrically connecting the second electrode and the second electrode with a solder portion in the connection portion.
- connection structure in the step of arranging the second connection target member and the step of forming the connection portion, no pressure is applied, and the second connection is applied to the conductive paste.
- the weight of the target member is preferably added.
- the conductive paste in the step of arranging the second connection target member and the step of forming the connection portion, has a weight force of the second connection target member. It is preferable not to apply a pressure higher than.
- the plurality of solder particles are easily collected between the first electrode and the second electrode, and the plurality of solder particles are collected on the electrode ( Line). Moreover, it is difficult for some of the plurality of solder particles to be disposed in a region (space) where no electrode is formed, and the amount of solder particles disposed in a region where no electrode is formed can be considerably reduced. Therefore, the conduction reliability between the first electrode and the second electrode can be improved. In addition, it is possible to prevent electrical connection between laterally adjacent electrodes that should not be connected, and to improve insulation reliability.
- a conductive paste is used instead of a conductive film. The inventors have found that they need to be used.
- conductive particles having base material particles and a solder layer disposed on the surface of the base material particles are known as particles different from the solder particles. Compared to the case where such conductive particles are used, when solder particles are used, the melting point of the flux and the melting point of the solder particles are in a specific range, so that the solder particles are arranged on the electrodes. The effect of improving accuracy is increased.
- the connection portion is Solder particles arranged in a region (space) where no electrode is formed before being formed are more easily collected between the first electrode and the second electrode, and a plurality of solder particles are separated into electrodes (lines).
- the inventors have also found that they can be arranged efficiently above.
- a configuration in which a conductive paste is used instead of a conductive film and a configuration in which the weight of the second connection target member is added to the conductive paste without applying pressure are used in combination. This has a great meaning in order to obtain the effects of the present invention at a higher level.
- WO2008 / 023452A1 describes that it is preferable to pressurize with a predetermined pressure at the time of bonding from the viewpoint of efficiently moving the solder powder to the electrode surface, and the pressurizing pressure further ensures the solder area.
- the pressure is set to 0 MPa or more, preferably 1 MPa or more.
- a predetermined pressure may be applied to the adhesive tape by its own weight.
- the pressure applied intentionally to the adhesive tape may be 0 MPa, but there is no difference between the effect when the pressure exceeding 0 MPa is applied and when the pressure is set to 0 MPa. Not listed.
- the thickness of the connecting portion can be adjusted as appropriate depending on the amount of the conductive paste applied.
- the conductive film in order to change or adjust the thickness of the connection portion, it is necessary to prepare a conductive film having a different thickness or to prepare a conductive film having a predetermined thickness. There is.
- FIG. 1 schematically shows a connection structure obtained by using a conductive paste according to an embodiment of the present invention in a partially cutaway front sectional view.
- connection structure 1 shown in FIG. 1 is a connection that connects a first connection target member 2, a second connection target member 3, and the first connection target member 2 and the second connection target member 3.
- Part 4 The connection portion 4 is formed of a conductive paste containing a thermosetting component, a flux, and a plurality of solder particles. In this conductive paste, the viscosity at the melting point of the flux and the viscosity at the melting point of the solder particles are within a specific range.
- the connecting portion 4 includes a solder portion 4A in which a plurality of solder particles are gathered and joined to each other, and a cured product portion 4B in which a thermosetting component is thermally cured.
- the first connection object member 2 has a plurality of first electrodes 2a on the surface (upper surface).
- the second connection target member 3 has a plurality of second electrodes 3a on the surface (lower surface).
- the first electrode 2a and the second electrode 3a are electrically connected by the solder portion 4A. Therefore, the first connection target member 2 and the second connection target member 3 are electrically connected by the solder portion 4A.
- no solder exists in a region (cured product portion 4B portion) different from the solder portion 4A gathered between the first electrode 2a and the second electrode 3a.
- connection structure 1 As shown in FIG. 1, in the connection structure 1, after a plurality of solder particles are melted, the molten solder particles are wetted and spread on the surface of the electrode to solidify to form a solder portion 4 ⁇ / b> A. For this reason, the connection area of 4 A of solder parts and the 1st electrode 2a, and 4 A of solder parts, and the 2nd electrode 3a becomes large. That is, by using the solder particles, the solder portion 4A, the first electrode 2a, and the solder portion are compared with the case where the conductive outer surface is made of a metal such as nickel, gold or copper. The contact area between 4A and the second electrode 3a increases. For this reason, the conduction
- connection structure 1 shown in FIG. 1 all of the solder portions 4A are located in the facing region between the first and second electrodes 2a and 3a.
- the connection structure 1X of the modification shown in FIG. 3 is different from the connection structure 1 shown in FIG. 1 only in the connection portion 4X.
- the connection part 4X has the solder part 4XA and the hardened
- most of the solder portions 4XA are located in regions where the first and second electrodes 2a and 3a are opposed to each other, and a part of the solder portion 4XA is first and second. You may protrude to the side from the area
- the solder part 4XA protruding laterally from the region where the first and second electrodes 2a and 3a are opposed is a part of the solder part 4XA and is not a solder separated from the solder part 4XA.
- the amount of solder away from the solder portion can be reduced, but the solder away from the solder portion may exist in the cured product portion.
- connection structure 1 If the amount of solder particles used is reduced, the connection structure 1 can be easily obtained. If the amount of the solder particles used is increased, it becomes easy to obtain the connection structure 1X.
- connection structure 1 using the conductive paste according to the embodiment of the present invention will be described.
- the first connection target member 2 having the first electrode 2a on the surface (upper surface) is prepared.
- a conductive paste 11 including a thermosetting component 11B, a plurality of solder particles 11A, and a flux is disposed on the surface of the first connection target member 2 ( First step).
- the conductive paste 11 is disposed on the surface of the first connection target member 2 on which the first electrode 2a is provided.
- the solder particles 11A are disposed both on the first electrode 2a (line) and on a region (space) where the first electrode 2a is not formed.
- the arrangement method of the conductive paste 11 is not particularly limited, and examples thereof include application with a dispenser, screen printing, and ejection with an inkjet device.
- the 2nd connection object member 3 which has the 2nd electrode 3a on the surface (lower surface) is prepared.
- the 2nd connection object member 3 is arrange
- the second connection target member 3 is disposed from the second electrode 3a side. At this time, the first electrode 2a and the second electrode 3a are opposed to each other.
- the conductive paste 11 is heated above the melting point of the solder particles 11A and above the curing temperature of the thermosetting component 11B (third step). That is, the conductive paste 11 is heated to a temperature lower than the melting point of the solder particles 11A and the curing temperature of the thermosetting component 11B. At the time of this heating, the solder particles 11A that existed in the region where no electrode is formed gather between the first electrode 2a and the second electrode 3a (self-aggregation effect). In this embodiment, since the conductive paste is used instead of the conductive film, the solder particles 11A are effectively collected between the first electrode 2a and the second electrode 3a. Also, the solder particles 11A are melted and joined together. Further, the thermosetting component 11B is thermoset.
- connection portion 4 connecting the first connection target member 2 and the second connection target member 3 is formed with the conductive paste 11.
- the connection part 4 is formed by the conductive paste 11
- the solder part 4A is formed by joining a plurality of solder particles 11A
- the cured part 4B is formed by thermosetting the thermosetting component 11B. Since the solder particles 11A move quickly, the first electrode 2a and the second electrode are moved after the movement of the solder particles 11A not located between the first electrode 2a and the second electrode 3a starts. It is not necessary to keep the temperature constant until the movement of the solder particles 11A is completed.
- connection structure 1 shown in FIG. 1 is obtained.
- the second step and the third step may be performed continuously.
- the laminated body of the obtained 1st connection object member 2, the electrically conductive paste 11, and the 2nd connection object member 3 is moved to a heating part, and said 3rd said You may perform a process.
- the laminate In order to perform the heating, the laminate may be disposed on a heating member, or the laminate may be disposed in a heated space.
- the heating temperature in the third step is not particularly limited as long as it is higher than the melting point of the solder particles and higher than the curing temperature of the thermosetting component.
- the heating temperature is preferably 130 ° C. or higher, more preferably 160 ° C. or higher, preferably 450 ° C. or lower, more preferably 250 ° C. or lower, and still more preferably 200 ° C. or lower.
- the said 1st connection object member should just have at least 1 1st electrode.
- the first connection target member preferably has a plurality of first electrodes.
- the said 2nd connection object member should just have at least 1 2nd electrode.
- the second connection target member preferably has a plurality of second electrodes.
- the first and second connection target members are not particularly limited. Specific examples of the first and second connection target members include electronic components such as semiconductor chips, capacitors, and diodes, and resin films, printed boards, flexible printed boards, flexible flat cables, rigid flexible boards, glass epoxies. Examples thereof include electronic components such as circuit boards such as substrates and glass substrates.
- the first and second connection target members are preferably electronic components.
- At least one of the first connection target member and the second connection target member is a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board.
- the second connection target member is preferably a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board. Resin films, flexible printed boards, flexible flat cables, and rigid flexible boards have the property of being highly flexible and relatively lightweight. When a conductive film is used for connection of such a connection object member, there exists a tendency for a solder particle not to gather on an electrode.
- the conductive paste according to the present invention is used, even if a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board is used, the solder particles can be efficiently collected on the electrode. And the reliability of conduction between the electrodes can be sufficiently enhanced.
- the reliability of conduction between electrodes by not applying pressure compared to the case of using other connection target members such as a semiconductor chip. The improvement effect can be obtained more effectively.
- the electrode provided on the connection target member examples include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a silver electrode, a molybdenum electrode, a SUS electrode, and a tungsten electrode.
- the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, a silver electrode, or a copper electrode.
- the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, or a tungsten electrode.
- the electrode formed only with aluminum may be sufficient and the electrode by which the aluminum layer was laminated
- the material for the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element.
- the trivalent metal element include Sn, Al, and Ga.
- the distance D1 of the connecting portion at the position where the first electrode and the second electrode face each other is preferably 5 ⁇ m or more, more preferably 20 ⁇ m or more, preferably 50 ⁇ m or less, more preferably 75 ⁇ m or less.
- the distance D1 is equal to or greater than the lower limit, the connection reliability between the connection portion and the connection target member is further increased.
- the distance D1 is less than or equal to the above upper limit, solder particles are more likely to gather on the electrodes when the connection portion is formed, and the conduction reliability between the electrodes is further enhanced.
- the viscosity ⁇ 1 at 25 ° C. of the conductive paste is preferably 10 Pa ⁇ s or more, more preferably 50 Pa ⁇ s or more, and further preferably 100 Pa ⁇ s or more, preferably Is 800 Pa ⁇ s or less, more preferably 600 Pa ⁇ s or less, and still more preferably 500 Pa ⁇ s or less.
- the viscosity can be appropriately adjusted depending on the type and amount of the compounding component. Further, the use of a filler can make the viscosity relatively high. However, since the filler may inhibit the movement of the solder particles, the filler content is preferably small.
- the viscosity ⁇ 2 at the melting point of the flux of the conductive paste is 0.1 Pa ⁇ s or more and 3 Pa ⁇ s or less. From the viewpoint of more efficiently arranging the solder particles on the electrode, the viscosity ⁇ 2 is preferably 0.15 Pa ⁇ s or more, more preferably 0.2 Pa ⁇ s or more, preferably 2 Pa ⁇ s or less, more preferably 1 Pa ⁇ s or less.
- the viscosity ⁇ 3 at the melting point of the solder particles of the conductive paste is 0.1 Pa ⁇ s or more and 5 Pa ⁇ s or less. From the viewpoint of more efficiently arranging the solder particles on the electrode, the viscosity ⁇ 3 is preferably 0.15 Pa ⁇ s or more, more preferably 0.2 Pa ⁇ s or more, preferably 3 Pa ⁇ s or less, more preferably 1 Pa ⁇ s or less.
- the ratio of the viscosity ⁇ 1 to the viscosity ⁇ 2 is preferably 15 or more, more preferably 50 or more, preferably 3000 or less, more preferably Is 2500 or less.
- the ratio of the viscosity ⁇ 1 to the viscosity ⁇ 3 is preferably 10 or more, more preferably 40 or more, preferably 2500 or less, more preferably Is 2000 or less.
- the ratio of the viscosity ⁇ 2 to the viscosity ⁇ 3 is preferably 0.1 or more, more preferably 0.3 or more, preferably 10 Below, more preferably 1 or less.
- the viscosity can be measured under conditions of 25 ° C. and 5 rpm using, for example, an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.).
- the conductive paste includes a thermosetting component, a flux, and a plurality of solder particles.
- the thermosetting component preferably includes a curable compound (thermosetting compound) that can be cured by heating, and a thermosetting agent.
- solder particles have solder on a conductive outer surface.
- both a center part and an electroconductive outer surface are formed with the solder.
- the solder particles are preferably surface-treated so that carboxyl groups exist on the outer surface.
- the solder particles are preferably blended into the conductive paste after being surface-treated so that carboxyl groups exist on the outer surface.
- the solder is preferably a metal (low melting point metal) having a melting point of 450 ° C. or lower.
- the solder particles are preferably metal particles (low melting point metal particles) having a melting point of 450 ° C. or lower.
- the low melting point metal particles are particles containing a low melting point metal.
- the low melting point metal is a metal having a melting point of 450 ° C. or lower.
- the melting point of the low melting point metal is preferably 300 ° C. or lower, more preferably 160 ° C. or lower.
- the solder particles include tin.
- the content of tin is preferably 30% by weight or more, more preferably 40% by weight or more, still more preferably 70% by weight or more, and particularly preferably 90% by weight or more.
- the content of tin in the solder particles is equal to or higher than the lower limit, the connection reliability between the solder portion and the electrode is further enhanced.
- the tin content is determined using a high-frequency inductively coupled plasma emission spectrometer (“ICP-AES” manufactured by Horiba, Ltd.) or a fluorescent X-ray analyzer (“EDX-800HS” manufactured by Shimadzu). It can be measured.
- ICP-AES high-frequency inductively coupled plasma emission spectrometer
- EDX-800HS fluorescent X-ray analyzer
- solder particles By using the above solder particles, the solder is melted and joined to the electrodes, and the solder portion conducts between the electrodes. For example, since the solder portion and the electrode are not in point contact but in surface contact, the connection resistance is lowered. In addition, the use of solder particles increases the bonding strength between the solder portion and the electrode. As a result, peeling between the solder portion and the electrode is further less likely to occur, and the conduction reliability and the connection reliability are effectively increased.
- the low melting point metal constituting the solder particles is not particularly limited.
- the low melting point metal is preferably tin or an alloy containing tin.
- the alloy include a tin-silver alloy, a tin-copper alloy, a tin-silver-copper alloy, a tin-bismuth alloy, a tin-zinc alloy, and a tin-indium alloy.
- the low melting point metal is preferably tin, a tin-silver alloy, a tin-silver-copper alloy, a tin-bismuth alloy, or a tin-indium alloy because of its excellent wettability with respect to the electrode. More preferred are a tin-bismuth alloy and a tin-indium alloy.
- the solder particles are preferably a filler material having a liquidus line of 450 ° C. or lower based on JIS Z3001: Welding terms.
- the composition of the solder particles include metal compositions containing zinc, gold, silver, lead, copper, tin, bismuth, indium and the like. Of these, a tin-indium system (117 ° C. eutectic) or a tin-bismuth system (139 ° C. eutectic) which is low-melting and lead-free is preferable. That is, the solder particles preferably do not contain lead, and preferably contain tin and indium, or contain tin and bismuth.
- the solder particles include nickel, copper, antimony, aluminum, zinc, iron, gold, titanium, phosphorus, germanium, tellurium, cobalt, bismuth, manganese, chromium. Further, it may contain a metal such as molybdenum and palladium. Moreover, from the viewpoint of further increasing the bonding strength between the solder portion and the electrode, the solder particles preferably contain nickel, copper, antimony, aluminum, or zinc. From the viewpoint of further increasing the bonding strength between the solder part and the electrode, the content of these metals for increasing the bonding strength is preferably 0.0001% by weight or more, preferably 1% by weight in 100% by weight of the solder particles. % Or less.
- the average particle diameter of the solder particles is preferably 0.5 ⁇ m or more, more preferably 1 ⁇ m or more, still more preferably 3 ⁇ m or more, particularly preferably 5 ⁇ m or more, preferably 100 ⁇ m or less, more preferably 40 ⁇ m or less, and even more preferably 30 ⁇ m.
- it is more preferably 20 ⁇ m or less, particularly preferably 15 ⁇ m or less, and most preferably 10 ⁇ m or less.
- the average particle diameter of the solder particles is particularly preferably 3 ⁇ m or more and 30 ⁇ m or less.
- the average particle diameter” of the solder particles indicates the number average particle diameter.
- the average particle diameter of the solder particles is obtained, for example, by observing 50 arbitrary solder particles with an electron microscope or an optical microscope and calculating an average value.
- the content of the solder particles in 100% by weight of the conductive paste is preferably 1% by weight or more, more preferably 2% by weight or more, still more preferably 10% by weight or more, particularly preferably 20% by weight or more, and most preferably 30%. % By weight or more, preferably 80% by weight or less, more preferably 60% by weight or less, and still more preferably 50% by weight or less.
- the content of the solder particles is not less than the above lower limit and not more than the above upper limit, it is possible to more efficiently arrange the solder particles on the electrodes, and it is easy to arrange many solder particles between the electrodes, The conduction reliability is further increased. From the viewpoint of further improving the conduction reliability, it is preferable that the content of the solder particles is large.
- thermosetting component examples include oxetane compounds, epoxy compounds, episulfide compounds, (meth) acrylic compounds, phenolic compounds, amino compounds, unsaturated polyester compounds, polyurethane compounds, silicone compounds, and polyimide compounds.
- an epoxy compound is preferable from the viewpoint of further improving the curability and viscosity of the conductive paste and further improving the connection reliability.
- thermosetting compound is preferably dispersed in the form of particles.
- the content of the thermosetting compound is preferably 20% by weight or more, more preferably 40% by weight or more, still more preferably 50% by weight or more, and preferably 99% by weight or less. Is 98% by weight or less, more preferably 90% by weight or less, and particularly preferably 80% by weight or less. From the viewpoint of further improving the impact resistance, it is preferable that the content of the thermosetting component is large.
- thermosetting agent thermosetting component
- the thermosetting agent thermosets the thermosetting compound.
- examples of the thermosetting agent include an imidazole curing agent, an amine curing agent, a phenol curing agent, a polythiol curing agent, an acid anhydride, a thermal cation initiator, and a thermal radical generator.
- the said thermosetting agent only 1 type may be used and 2 or more types may be used together.
- an imidazole curing agent, a polythiol curing agent, or an amine curing agent is preferable because the conductive paste can be cured more rapidly at a low temperature.
- a latent curing agent is preferable.
- the latent curing agent is preferably a latent imidazole curing agent, a latent polythiol curing agent or a latent amine curing agent.
- the said thermosetting agent may be coat
- the imidazole curing agent is not particularly limited, and 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4-Diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine and 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s- Examples include triazine isocyanuric acid adducts.
- the polythiol curing agent is not particularly limited, but is trimethylolpropane tris-3-mercaptopropionate, pentaerythritol tetrakis (3-mercaptobutyrate), pentaerythritol tetrakis-3-mercaptopropionate and dipentaerythritol hexa. -3-Mercaptopropionate and the like.
- the solubility parameter of the polythiol curing agent is preferably 9.5 or more, and preferably 12 or less.
- the solubility parameter is calculated by the Fedors method.
- the solubility parameter of trimethylolpropane tris-3-mercaptopropionate is 9.6, and the solubility parameter of dipentaerythritol hexa-3-mercaptopropionate is 11.4.
- the amine curing agent is not particularly limited, and hexamethylenediamine, octamethylenediamine, decamethylenediamine, 3,9-bis (3-aminopropyl) -2,4,8,10-tetraspiro [5.5].
- examples include undecane, bis (4-aminocyclohexyl) methane, metaphenylenediamine, and diaminodiphenylsulfone.
- thermal cation curing agent examples include iodonium cation curing agents, oxonium cation curing agents, and sulfonium cation curing agents.
- examples of the iodonium-based cationic curing agent include bis (4-tert-butylphenyl) iodonium hexafluorophosphate.
- examples of the oxonium-based cationic curing agent include trimethyloxonium tetrafluoroborate.
- the sulfonium-based cationic curing agent examples include tri-p-tolylsulfonium hexafluorophosphate.
- the thermal radical generator is not particularly limited, and examples thereof include azo compounds and organic peroxides.
- examples of the azo compound include azobisisobutyronitrile (AIBN).
- examples of the organic peroxide include di-tert-butyl peroxide and methyl ethyl ketone peroxide.
- the reaction initiation temperature of the thermosetting agent is preferably 50 ° C or higher, more preferably 70 ° C or higher, still more preferably 80 ° C or higher, preferably 250 ° C or lower, more preferably 200 ° C or lower, still more preferably 150 ° C or lower, Especially preferably, it is 140 degrees C or less.
- the reaction start temperature of the thermosetting agent is not less than the above lower limit and not more than the above upper limit, the solder particles are more efficiently arranged on the electrode.
- the reaction initiation temperature of the thermosetting agent is particularly preferably 80 ° C. or higher and 140 ° C. or lower.
- the reaction initiation temperature of the thermosetting agent is preferably lower than the melting point of the solder in the solder particles, more preferably 5 ° C. or more, and more preferably 10 It is more preferable that the temperature is lower by at least ° C.
- the reaction start temperature of the thermosetting agent means the temperature at which the exothermic peak of DSC starts to rise.
- the content of the thermosetting agent is not particularly limited.
- the content of the thermosetting agent is preferably 0.01 parts by weight or more, more preferably 1 part by weight or more, preferably 200 parts by weight or less, more preferably 100 parts by weight with respect to 100 parts by weight of the thermosetting compound. Part or less, more preferably 75 parts by weight or less.
- the content of the thermosetting agent is at least the above lower limit, it is easy to sufficiently cure the conductive paste.
- the content of the thermosetting agent is not more than the above upper limit, it is difficult for an excess thermosetting agent that did not participate in curing after curing to remain, and the heat resistance of the cured product is further enhanced.
- the conductive paste contains a flux.
- the flux is not particularly limited.
- a flux generally used for soldering or the like can be used.
- the flux include zinc chloride, a mixture of zinc chloride and an inorganic halide, a mixture of zinc chloride and an inorganic acid, a molten salt, phosphoric acid, a derivative of phosphoric acid, an organic halide, hydrazine, an organic acid, and pine resin.
- Etc As for the said flux, only 1 type may be used and 2 or more types may be used together.
- Examples of the molten salt include ammonium chloride.
- Examples of the organic acid include lactic acid, citric acid, stearic acid, glutamic acid, and glutaric acid.
- Examples of the pine resin include activated pine resin and non-activated pine resin.
- the flux is preferably an organic acid having two or more carboxyl groups, pine resin.
- the flux may be an organic acid having two or more carboxyl groups, or pine resin.
- the above rosins are rosins whose main component is abietic acid.
- the flux is preferably rosins, and more preferably abietic acid. By using this preferable flux, the conduction reliability between the electrodes is further enhanced.
- the active temperature (melting point) of the flux is preferably 50 ° C. or higher, more preferably 70 ° C. or higher, still more preferably 80 ° C. or higher, particularly preferably 100 ° C. or higher, preferably 200 ° C. or lower, more preferably 190 ° C. or lower. More preferably, it is 160 ° C. or less, more preferably 150 ° C. or less, and still more preferably 140 ° C. or less.
- the activation temperature of the flux is not less than the above lower limit and not more than the above upper limit, the flux effect is more effectively exhibited, and the solder particles are more efficiently arranged on the electrode. As a result, the connection resistance between the electrodes is reduced, and the connection reliability is also increased.
- the active temperature (melting point) of the flux is preferably 80 ° C. or higher and 190 ° C. or lower, and more preferably 100 ° C. or higher and 190 ° C. or lower.
- the activation temperature of the flux is particularly preferably 80 ° C. or higher and 140 ° C. or lower, and more preferably 100 ° C. or higher and 140 ° C. or lower.
- Examples of the flux having a melting point of 80 ° C. or higher and 190 ° C. or lower include succinic acid (melting point 186 ° C.), glutaric acid (melting point 96 ° C.), adipic acid (melting point 152 ° C.), pimelic acid (melting point 104 ° C.), suberic acid
- Examples thereof include dicarboxylic acids such as (melting point 142 ° C.), benzoic acid (melting point 122 ° C.), and malic acid (melting point 130 ° C.).
- the boiling point of the flux is preferably 200 ° C. or lower.
- the melting point of the flux is preferably higher than the melting point of the solder in the solder particles, preferably 5 ° C or higher, more preferably 10 ° C or higher. Is more preferable.
- the melting point of the flux is preferably higher than the reaction start temperature of the thermosetting agent, more preferably 5 ° C or higher, more preferably 10 ° C or higher. More preferably.
- the flux may be dispersed in the conductive paste or may be adhered on the surface of the solder particles.
- the solder particles can be efficiently aggregated on the electrode portion. This is because, when heat is applied at the time of joining, when the electrode formed on the connection target member is compared with the portion of the connection target member around the electrode, the thermal conductivity of the electrode portion is that of the connection target member portion around the electrode. Due to the fact that it is higher than the heat traditional rate, it is caused by the rapid temperature rise of the electrode part. At the stage where the melting point of the solder particles is exceeded, the inside of the solder particles dissolves, but the oxide film formed on the surface does not reach the melting point (activation temperature) of the flux and is not removed.
- the flux is preferably a flux that releases cations by heating.
- a flux that releases cations upon heating the solder particles can be arranged more efficiently on the electrode.
- thermal cation curing agent can be used as the flux that releases cations by heating.
- the content of the flux is preferably 0.5% by weight or more, preferably 30% by weight or less, more preferably 25% by weight or less.
- the conductive paste may not contain a flux.
- the flux content is not less than the above lower limit and not more than the above upper limit, it becomes more difficult to form an oxide film on the surface of the solder and the electrode, and the oxide film formed on the surface of the solder and the electrode is more effective. Can be removed.
- a filler may be added to the conductive paste.
- the filler may be an organic filler or an inorganic filler. However, since the filler may inhibit the movement of the solder particles, the filler content is preferably small.
- the conductive paste does not contain a filler or contains a filler in less than 5% by weight in 100% by weight of the conductive paste.
- the content of the filler is preferably 0% by weight (not contained) or more, preferably 5% by weight or less, more preferably 2% by weight or less, still more preferably 1% by weight or less, even more.
- it is less than 0.25 wt%, particularly preferably 0.1 wt% or less.
- the conductive paste does not contain a filler or contains less than 0.25% by weight of filler in 100% by weight of the conductive paste, and most preferably the conductive paste does not contain a filler. If the filler content is less than 0.25% by weight, the solder particle migration inhibition by the filler is sufficiently small, and if the filler content is 0.1% by weight or less, the solder particle migration inhibition by the filler is inhibited. Pretty small.
- the conductive paste is, for example, a filler, an extender, a softener, a plasticizer, a polymerization catalyst, a curing catalyst, a colorant, an antioxidant, a heat stabilizer, a light stabilizer, an ultraviolet absorber, and a lubricant.
- various additives such as an antistatic agent and a flame retardant may be included.
- Polymer A Synthesis of reaction product (polymer A) of bisphenol F with 1,6-hexanediol diglycidyl ether and bisphenol F type epoxy resin: 72 parts by weight of bisphenol F (containing 4,4′-methylene bisphenol, 2,4′-methylene bisphenol and 2,2′-methylene bisphenol in a weight ratio of 2: 3: 1), 1,6-hexanediol 70 parts by weight of glycidyl ether and 30 parts by weight of bisphenol F type epoxy resin (“EPICLON EXA-830CRP” manufactured by DIC) were placed in a three-necked flask and dissolved at 150 ° C. under a nitrogen flow.
- bisphenol F type epoxy resin (“EPICLON EXA-830CRP” manufactured by DIC)
- the reaction product (Polymer A) contains a hydroxyl group derived from bisphenol F, 1,6-hexanediol diglycidyl ether, and an epoxy group of bisphenol F type epoxy resin. It was confirmed that it has a structural unit bonded to the main chain and has an epoxy group at both ends.
- the weight average molecular weight of the reaction product (polymer A) obtained by GPC was 10,000, and the number average molecular weight was 3,500.
- Polymer B both ends epoxy group rigid skeleton phenoxy resin, “YX6900BH45” manufactured by Mitsubishi Chemical Corporation, weight average molecular weight 16000
- Thermosetting compound 1 Resorcinol type epoxy compound, “EX-201” manufactured by Nagase ChemteX Corporation, washed after crystallization at low temperature
- Thermosetting compound 2 Bisphenol F type epoxy resin, “EPICLON EXA-830CRP” manufactured by DIC, used after being crystallized at low temperature
- Thermosetting agent 1 Pentaerythritol tetrakis (3-mercaptobutyrate), “Karenz MT PE1” manufactured by Showa Denko KK
- Latent epoxy thermosetting agent 1 T & K TOKA's “Fujicure 7000”
- Flux 1 Adipic acid, manufactured by Wako Pure Chemical Industries, Ltd., melting point (activation temperature) 152 ° C.
- Flux 2 Succinic acid, manufactured by Wako Pure Chemical Industries, Ltd., melting point (active temperature) 186 ° C.
- Flux 3 Abietic acid, manufactured by Wako Pure Chemical Industries, Ltd., melting point (activation temperature) 174 ° C.
- Solder particles 1 (SnBi solder particles, melting point 139 ° C., “DS10” manufactured by Mitsui Kinzoku Co., Ltd.) are subjected to the following surface treatment, average particle diameter 13 ⁇ m)
- solder particles 200 g of solder particles, 40 g of adipic acid, and 70 g of acetone are weighed in a three-necked flask, and 0.3 g of dibutyltin oxide, which is a dehydration condensation catalyst between the hydroxyl groups of the solder particles and the carboxyl groups of adipic acid, is added. The reaction was carried out at 4 ° C for 4 hours. Thereafter, the solder particles were collected by filtration.
- dibutyltin oxide which is a dehydration condensation catalyst between the hydroxyl groups of the solder particles and the carboxyl groups of adipic acid
- the collected solder particles, 50 g of adipic acid, 200 g of toluene, and 0.3 g of para-toluenesulfonic acid are weighed in a three-necked flask and allowed to react at 120 ° C. for 3 hours while evacuating and refluxing. It was. At this time, the reaction was carried out while removing water produced by dehydration condensation using a Dean-Stark extraction device.
- solder particles were collected by filtration, washed with hexane, and dried. Thereafter, the obtained solder particles were crushed with a ball mill, and then a sieve was selected so as to obtain a predetermined CV value. The obtained solder particles were surface-treated so that carboxyl groups were present on the outer surface.
- Solder particles 2 (SnBi solder particles, melting point 139 ° C., “DS30” manufactured by Mitsui Kinzoku Co., Ltd.) surface-treated in the same manner as the solder particles 1, average particle diameter 32 ⁇ m
- Phenoxy resin (“YP-50S” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.)
- Examples 1 to 4, 6 to 9 (1) Preparation of anisotropic conductive paste The components shown in Table 1 below were blended in the blending amounts shown in Table 1 to obtain anisotropic conductive paste. In the anisotropic conductive paste obtained, the thermosetting compound was dispersed in the form of particles.
- FR-4 substrate having a copper electrode pattern (copper electrode thickness 10 ⁇ m) having an L / S of 50 ⁇ m / 50 ⁇ m on the upper surface
- Second connection object member the flexible printed circuit board (2nd connection object member) which has a copper electrode pattern (copper electrode thickness 10 micrometers) whose L / S is 50 micrometers / 50 micrometers on the lower surface was prepared.
- the overlapping area of the glass epoxy substrate and the flexible substrate was 1.5 cm ⁇ 4 mm, and the number of connected electrodes was 75 pairs.
- the anisotropic conductive paste immediately after fabrication was applied to the upper surface of the glass epoxy substrate so as to have a thickness of 50 ⁇ m to form an anisotropic conductive paste layer.
- the flexible printed circuit board was laminated on the upper surface of the anisotropic conductive paste layer so that the electrodes face each other. At this time, no pressure was applied. The weight of the flexible printed board is added to the anisotropic conductive paste layer. Thereafter, while heating the anisotropic conductive paste layer to 190 ° C., the solder was melted and the anisotropic conductive paste layer was cured at 190 ° C. to obtain a first connection structure.
- Glass epoxy substrate (FR-4 substrate) having a copper electrode pattern (copper electrode thickness 10 ⁇ m) having L / S of 75 ⁇ m / 75 ⁇ m on the upper surface (First connection object member) was prepared.
- the flexible printed circuit board (2nd connection object member) which has a copper electrode pattern (copper electrode thickness 10 micrometers) whose L / S is 75 micrometers / 75 micrometers on the lower surface was prepared.
- 2nd connection structure was obtained like manufacture of the 1st connection structure except having used the above-mentioned glass epoxy board and flexible printed circuit board from which L / S differs.
- 3rd connection structure was obtained like manufacture of the 1st connection structure except having used the above-mentioned glass epoxy board and flexible printed circuit board from which L / S differs.
- Electrode size (L) / inter-electrode space (S) is 100 ⁇ m / 100 ⁇ m (for the third connection structure), 75 ⁇ m / 75 ⁇ m (for the second connection structure), 50 ⁇ m / 50 ⁇ m (first connection structure) 5 mm square semiconductor chip (thickness 400 ⁇ m) and a glass epoxy substrate (size 30 ⁇ 30 mm, thickness 0.4 mm) having electrodes facing it.
- First, second, and third connection structures were obtained in the same manner as in Example 1 except that a semiconductor chip and a glass epoxy substrate were used.
- the 1st, 2nd, 3rd connection structure was obtained like Example 1 except having used an anisotropic conductive film.
- Electrode size (L) / inter-electrode space (S) is 100 ⁇ m / 100 ⁇ m (for the third connection structure), 75 ⁇ m / 75 ⁇ m (for the second connection structure), 50 ⁇ m / 50 ⁇ m (first connection structure) 5 mm square semiconductor chip (thickness 400 ⁇ m) and a glass epoxy substrate (size 30 ⁇ 30 mm thickness 0.4 mm) having electrodes facing it.
- the first, second, and third connection structures were obtained in the same manner as in Comparative Example 1 except that this semiconductor chip and glass epoxy substrate were used.
- Viscosity The viscosity ⁇ 1 at 25 ° C. of the anisotropic conductive paste was measured under the conditions of 25 ° C. and 5 rpm using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.). Further, the viscosity ⁇ 2 at the melting point of the flux of the anisotropic conductive paste was measured using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.) under the condition of the melting point of the flux and 5 rpm.
- the viscosity ⁇ 3 at the melting point of the solder particles of the anisotropic conductive paste was measured using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.) under the condition of the melting point of the solder particles and 5 rpm.
- the ratio ( ⁇ 1 / ⁇ 2), the ratio ( ⁇ 1 / ⁇ 3), and the ratio ( ⁇ 2 / ⁇ 3) were determined from the obtained measured values.
- connection distance (inter-electrode spacing)
- solder placement accuracy on electrodes In the cross section (cross section in the direction shown in FIG. 1) of the obtained first connection structure, it is separated from the solder portion disposed between the electrodes in 100% of the total area of the solder. Thus, the area (%) of the solder remaining in the cured product was evaluated. In addition, the average of the area in five cross sections was computed. The placement accuracy of the solder on the electrode was determined according to the following criteria.
- ⁇ Average value of connection resistance is 10 7 ⁇ or more ⁇ : Average value of connection resistance is 10 6 ⁇ or more, less than 10 7 ⁇ ⁇ : Average value of connection resistance is 10 5 ⁇ or more, less than 10 6 ⁇ ⁇ : Connection The average resistance is less than 10 5 ⁇
- the second connection target member is a flexible printed circuit board
- the second connection target member is It can be seen that the effect of improving the conduction reliability by using the conductive paste of the present invention can be obtained more effectively than in the case of a semiconductor chip.
- FIGS. 4A, 4B and 4C show an example of a connection structure using a conductive paste not included in the embodiment of the present invention.
- 4A and 4B are cross-sectional images
- FIG. 4C is a planar image.
- 4A, 4B, and 4C a plurality of solders (solder particles) remaining in the cured product away from the solder portions disposed between the electrodes exist on the side of the solder portions.
- grains which remain
Abstract
Description
上記はんだ粒子は、はんだを導電性の外表面に有する。上記はんだ粒子は、中心部分及び導電性の外表面とのいずれもがはんだにより形成されている。はんだを電極上により一層効率的に配置する観点からは、上記はんだ粒子は、外表面にカルボキシル基が存在するように表面処理されていることが好ましい。上記はんだ粒子は、外表面にカルボキシル基が存在するように表面処理された後に、導電ペーストに配合されることが好ましい。 (Solder particles)
The solder particles have solder on a conductive outer surface. As for the said solder particle, both a center part and an electroconductive outer surface are formed with the solder. From the viewpoint of more efficiently arranging the solder on the electrode, the solder particles are preferably surface-treated so that carboxyl groups exist on the outer surface. The solder particles are preferably blended into the conductive paste after being surface-treated so that carboxyl groups exist on the outer surface.
上記熱硬化性化合物としては、オキセタン化合物、エポキシ化合物、エピスルフィド化合物、(メタ)アクリル化合物、フェノール化合物、アミノ化合物、不飽和ポリエステル化合物、ポリウレタン化合物、シリコーン化合物及びポリイミド化合物等が挙げられる。なかでも、導電ペーストの硬化性及び粘度をより一層良好にし、接続信頼性をより一層高める観点から、エポキシ化合物が好ましい。 (Compound curable by heating: thermosetting component)
Examples of the thermosetting compound include oxetane compounds, epoxy compounds, episulfide compounds, (meth) acrylic compounds, phenolic compounds, amino compounds, unsaturated polyester compounds, polyurethane compounds, silicone compounds, and polyimide compounds. Among these, an epoxy compound is preferable from the viewpoint of further improving the curability and viscosity of the conductive paste and further improving the connection reliability.
上記熱硬化剤は、上記熱硬化性化合物を熱硬化させる。上記熱硬化剤としては、イミダゾール硬化剤、アミン硬化剤、フェノール硬化剤、ポリチオール硬化剤、酸無水物、熱カチオン開始剤及び熱ラジカル発生剤等が挙げられる。上記熱硬化剤は、1種のみが用いられてもよく、2種以上が併用されてもよい。 (Thermosetting agent: thermosetting component)
The thermosetting agent thermosets the thermosetting compound. Examples of the thermosetting agent include an imidazole curing agent, an amine curing agent, a phenol curing agent, a polythiol curing agent, an acid anhydride, a thermal cation initiator, and a thermal radical generator. As for the said thermosetting agent, only 1 type may be used and 2 or more types may be used together.
上記導電ペーストは、フラックスを含む。フラックスの使用により、はんだを電極上により一層効果的に配置することができる。該フラックスは特に限定されない。フラックスとして、はんだ接合等に一般的に用いられているフラックスを使用できる。上記フラックスとしては、例えば、塩化亜鉛、塩化亜鉛と無機ハロゲン化物との混合物、塩化亜鉛と無機酸との混合物、溶融塩、リン酸、リン酸の誘導体、有機ハロゲン化物、ヒドラジン、有機酸及び松脂等が挙げられる。上記フラックスは1種のみが用いられてもよく、2種以上が併用されてもよい。 (flux)
The conductive paste contains a flux. By using flux, the solder can be more effectively placed on the electrode. The flux is not particularly limited. As the flux, a flux generally used for soldering or the like can be used. Examples of the flux include zinc chloride, a mixture of zinc chloride and an inorganic halide, a mixture of zinc chloride and an inorganic acid, a molten salt, phosphoric acid, a derivative of phosphoric acid, an organic halide, hydrazine, an organic acid, and pine resin. Etc. As for the said flux, only 1 type may be used and 2 or more types may be used together.
上記導電ペーストには、フィラーを添加してもよい。フィラーは、有機フィラーであってもよく、無機フィラーであってもよい。但し、フィラーは、はんだ粒子の移動を阻害することがあるので、フィラーの含有量は少ないことが好ましい。 (Filler)
A filler may be added to the conductive paste. The filler may be an organic filler or an inorganic filler. However, since the filler may inhibit the movement of the solder particles, the filler content is preferably small.
上記導電ペーストは、必要に応じて、例えば、充填剤、増量剤、軟化剤、可塑剤、重合触媒、硬化触媒、着色剤、酸化防止剤、熱安定剤、光安定剤、紫外線吸収剤、滑剤、帯電防止剤及び難燃剤等の各種添加剤を含んでいてもよい。 (Other ingredients)
If necessary, the conductive paste is, for example, a filler, an extender, a softener, a plasticizer, a polymerization catalyst, a curing catalyst, a colorant, an antioxidant, a heat stabilizer, a light stabilizer, an ultraviolet absorber, and a lubricant. In addition, various additives such as an antistatic agent and a flame retardant may be included.
ビスフェノールFと1,6-ヘキサンジオールジグリシジルエーテル、及びビスフェノールF型エポキシ樹脂との反応物(ポリマーA)の合成:
ビスフェノールF(4,4’-メチレンビスフェノールと2,4’-メチレンビスフェノールと2,2’-メチレンビスフェノールとを重量比で2:3:1で含む)72重量部、1,6-ヘキサンジオールジグリシジルエーテル70重量部、及びビスフェノールF型エポキシ樹脂(DIC社製「EPICLON EXA-830CRP」)30重量部を、3つ口フラスコに入れ、窒素フロー下にて、150℃で溶解させた。その後、水酸基とエポキシ基の付加反応触媒であるテトラーn-ブチルスルホニウムブロミド0.1重量部を添加し、窒素フロー下にて、150℃で6時間、付加重合反応させることにより、反応物(ポリマーA)を得た。 Polymer A:
Synthesis of reaction product (polymer A) of bisphenol F with 1,6-hexanediol diglycidyl ether and bisphenol F type epoxy resin:
72 parts by weight of bisphenol F (containing 4,4′-methylene bisphenol, 2,4′-methylene bisphenol and 2,2′-methylene bisphenol in a weight ratio of 2: 3: 1), 1,6-hexanediol 70 parts by weight of glycidyl ether and 30 parts by weight of bisphenol F type epoxy resin (“EPICLON EXA-830CRP” manufactured by DIC) were placed in a three-necked flask and dissolved at 150 ° C. under a nitrogen flow. Thereafter, 0.1 part by weight of tetra-n-butylsulfonium bromide, which is a catalyst for addition reaction of a hydroxyl group and an epoxy group, was added, and an addition polymerization reaction was performed at 150 ° C. for 6 hours under a nitrogen flow to obtain a reactant (polymer). A) was obtained.
はんだ粒子200g、アジピン酸40g、及びアセトン70gを3つ口フラスコに秤量し、はんだ粒子の表面の水酸基とアジピン酸のカルボキシル基との脱水縮合触媒であるジブチル錫オキサイド0.3gを添加し、60℃で4時間反応させた。その後、はんだ粒子をろ過することで回収した。 Surface treatment of solder particles:
200 g of solder particles, 40 g of adipic acid, and 70 g of acetone are weighed in a three-necked flask, and 0.3 g of dibutyltin oxide, which is a dehydration condensation catalyst between the hydroxyl groups of the solder particles and the carboxyl groups of adipic acid, is added. The reaction was carried out at 4 ° C for 4 hours. Thereafter, the solder particles were collected by filtration.
(1)異方性導電ペーストの作製
下記の表1に示す成分を下記の表1に示す配合量で配合して、異方性導電ペーストを得た。なお、得られた異方性導電ペーストにおいて、熱硬化性化合物は粒子状に分散していた。 (Examples 1 to 4, 6 to 9)
(1) Preparation of anisotropic conductive paste The components shown in Table 1 below were blended in the blending amounts shown in Table 1 to obtain anisotropic conductive paste. In the anisotropic conductive paste obtained, the thermosetting compound was dispersed in the form of particles.
L/Sが50μm/50μmの銅電極パターン(銅電極厚み10μm)を上面に有するガラスエポキシ基板(FR-4基板)(第1の接続対象部材)を用意した。また、L/Sが50μm/50μmの銅電極パターン(銅電極厚み10μm)を下面に有するフレキシブルプリント基板(第2の接続対象部材)を用意した。 (2) Production of first connection structure (L / S = 50 μm / 50 μm) Glass epoxy substrate (FR-4 substrate) having a copper electrode pattern (copper electrode thickness 10 μm) having an L / S of 50 μm / 50 μm on the upper surface (First connection object member) was prepared. Moreover, the flexible printed circuit board (2nd connection object member) which has a copper electrode pattern (copper electrode thickness 10 micrometers) whose L / S is 50 micrometers / 50 micrometers on the lower surface was prepared.
L/Sが75μm/75μmの銅電極パターン(銅電極厚み10μm)を上面に有するガラスエポキシ基板(FR-4基板)(第1の接続対象部材)を用意した。また、L/Sが75μm/75μmの銅電極パターン(銅電極厚み10μm)を下面に有するフレキシブルプリント基板(第2の接続対象部材)を用意した。 (3) Production of second connection structure (L / S = 75 μm / 75 μm) Glass epoxy substrate (FR-4 substrate) having a copper electrode pattern (copper electrode thickness 10 μm) having L / S of 75 μm / 75 μm on the upper surface (First connection object member) was prepared. Moreover, the flexible printed circuit board (2nd connection object member) which has a copper electrode pattern (copper electrode thickness 10 micrometers) whose L / S is 75 micrometers / 75 micrometers on the lower surface was prepared.
L/Sが100μm/100μmの銅電極パターン(銅電極厚み10μm)を上面に有するガラスエポキシ基板(FR-4基板)(第1の接続対象部材)を用意した。また、L/Sが100μm/100μmの銅電極パターン(銅電極厚み10μm)を下面に有するフレキシブルプリント基板(第2の接続対象部材)を用意した。 (4) Production of third connection structure (L / S = 100 μm / 100 μm) Glass epoxy substrate (FR-4 substrate) having a copper electrode pattern (copper electrode thickness 10 μm) with L / S of 100 μm / 100 μm on the upper surface (First connection object member) was prepared. Moreover, the flexible printed circuit board (2nd connection object member) which has a copper electrode pattern (copper electrode thickness 10 micrometers) whose L / S is 100 micrometers / 100 micrometers on the lower surface was prepared.
電極サイズ(L)/電極間スペース(S)が、100μm/100μm(第3の接続構造体用)、75μm/75μm(第2の接続構造体用)、50μm/50μm(第1の接続構造体用)である、5mm角の半導体チップ(厚み400μm)と、それに対向する電極を有するガラスエポキシ基板(サイズ30×30mm、厚み0.4mm)とを用意した。半導体チップ及びガラスエポキシ基板を用いたいこと以外は実施例1と同様にして、第1,第2,第3の接続構造体を得た。 (Example 5)
Electrode size (L) / inter-electrode space (S) is 100 μm / 100 μm (for the third connection structure), 75 μm / 75 μm (for the second connection structure), 50 μm / 50 μm (first connection structure) 5 mm square semiconductor chip (thickness 400 μm) and a glass epoxy substrate (size 30 × 30 mm, thickness 0.4 mm) having electrodes facing it. First, second, and third connection structures were obtained in the same manner as in Example 1 except that a semiconductor chip and a glass epoxy substrate were used.
(1)異方性導電ペーストの作製
下記の表2に示す成分を下記の表2に示す配合量で配合して、異方性導電ペーストを得た。得られた異方性導電ペーストを用いたこと以外は実施例1と同様にして、第1,第2,第3の接続構造体を得た。 (Comparative Examples 1, 2, 5)
(1) Preparation of anisotropic conductive paste The components shown in Table 2 below were blended in the blending amounts shown in Table 2 to obtain anisotropic conductive paste. First, second, and third connection structures were obtained in the same manner as in Example 1 except that the obtained anisotropic conductive paste was used.
フェノキシ樹脂(新日鉄住金化学社製「YP-50S」)10重量部をメチルエチルケトン(MEK)に固形分が50重量%となるように溶解させて、溶解液を得た。下記の表2に示すフェノキシ樹脂を除く成分を下記の表2に示す配合量と、上記溶解液の全量とを配合して、遊星式攪拌機を用いて2000rpmで5分間攪拌した後、バーコーターを用いて乾燥後の厚みが30μmになるよう離型PET(ポリエチレンテレフタレート)フィルム上に塗工した。室温で真空乾燥することで、MEKを除去することにより、異方性導電フィルムを得た。 (Comparative Example 3)
10 parts by weight of phenoxy resin (“YP-50S” manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) was dissolved in methyl ethyl ketone (MEK) so that the solid content was 50% by weight to obtain a solution. Ingredients other than the phenoxy resin shown in Table 2 below were blended with the blending amounts shown in Table 2 below and the total amount of the above solution, and after stirring for 5 minutes at 2000 rpm using a planetary stirrer, a bar coater was used. It was coated on a release PET (polyethylene terephthalate) film so that the thickness after drying was 30 μm. An anisotropic conductive film was obtained by removing MEK by vacuum drying at room temperature.
電極サイズ(L)/電極間スペース(S)が、100μm/100μm(第3の接続構造体用)、75μm/75μm(第2の接続構造体用)、50μm/50μm(第1の接続構造体用)である、5mm角の半導体チップ(厚み400μm)と、それに対向する電極を有するガラスエポキシ基板(サイズ30×30mm厚み0.4mm)とを用意した。この半導体チップ及びガラスエポキシ基板を用いたいこと以外は比較例1と同様にして、第1,第2,第3の接続構造体を得た。 (Comparative Example 4)
Electrode size (L) / inter-electrode space (S) is 100 μm / 100 μm (for the third connection structure), 75 μm / 75 μm (for the second connection structure), 50 μm / 50 μm (first connection structure) 5 mm square semiconductor chip (thickness 400 μm) and a glass epoxy substrate (size 30 × 30 mm thickness 0.4 mm) having electrodes facing it. The first, second, and third connection structures were obtained in the same manner as in Comparative Example 1 except that this semiconductor chip and glass epoxy substrate were used.
(1)粘度
異方性導電ペーストの25℃での粘度η1を、E型粘度計(東機産業社製)を用いて、25℃及び5rpmの条件で測定した。また、異方性導電ペーストのフラックスの融点での粘度η2を、E型粘度計(東機産業社製)を用いて、フラックスの融点及び5rpmの条件で測定した。また、異方性導電ペーストのはんだ粒子の融点での粘度η3を、E型粘度計(東機産業社製)を用いて、はんだ粒子の融点及び5rpmの条件で測定した。得られた測定値から比(η1/η2)、比(η1/η3)、及び比(η2/η3)を求めた。 (Evaluation)
(1) Viscosity The viscosity η1 at 25 ° C. of the anisotropic conductive paste was measured under the conditions of 25 ° C. and 5 rpm using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.). Further, the viscosity η2 at the melting point of the flux of the anisotropic conductive paste was measured using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.) under the condition of the melting point of the flux and 5 rpm. Further, the viscosity η3 at the melting point of the solder particles of the anisotropic conductive paste was measured using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.) under the condition of the melting point of the solder particles and 5 rpm. The ratio (η1 / η2), the ratio (η1 / η3), and the ratio (η2 / η3) were determined from the obtained measured values.
得られた第1の接続構造体を断面観察することにより、上下の電極が対向している位置における接続部の距離D1(電極間の間隔)を評価した。 (2) Connection distance (inter-electrode spacing)
By observing a cross section of the obtained first connection structure, the distance D1 (interval between electrodes) of the connection portion at the position where the upper and lower electrodes face each other was evaluated.
得られた第1の接続構造体の断面(図1に示す方向の断面)において、はんだの全面積100%中、電極間に配置されたはんだ部から離れて硬化物中に残存しているはんだの面積(%)を評価した。なお、5つの断面における面積の平均を算出した。電極上のはんだの配置精度を下記の基準で判定した。 (3) Solder placement accuracy on electrodes In the cross section (cross section in the direction shown in FIG. 1) of the obtained first connection structure, it is separated from the solder portion disposed between the electrodes in 100% of the total area of the solder. Thus, the area (%) of the solder remaining in the cured product was evaluated. In addition, the average of the area in five cross sections was computed. The placement accuracy of the solder on the electrode was determined according to the following criteria.
○○:断面に現われているはんだの全面積100%中、電極間に配置されたはんだ部から離れて硬化物中に残存しているはんだ(はんだ粒子)の面積が0%以上、1%以下
○:断面に現われているはんだの全面積100%中、電極間に配置されたはんだ部から離れて硬化物中に残存しているはんだ(はんだ粒子)の面積が1%を超え、10%以下
△:断面に現われているはんだの全面積100%中、電極間に配置されたはんだ部から離れて硬化物中に残存しているはんだ(はんだ粒子)の面積が10%を超え、30%以下
×:断面に現われているはんだの全面積100%中、電極間に配置されたはんだ部から離れて硬化物中に残存しているはんだ(はんだ粒子)の面積が30%を超える [Judgment criteria for placement accuracy of conductive particles on electrode]
OO: The area of the solder (solder particles) remaining in the cured product away from the solder portion arranged between the electrodes in the total area of 100% of the solder appearing in the cross section is 0% or more and 1% or less ○: Out of 100% of the total area of the solder appearing in the cross section, the area of the solder (solder particles) remaining in the cured product away from the solder portion disposed between the electrodes exceeds 1% and is 10% or less Δ: The area of the solder (solder particles) remaining in the cured product away from the solder portion arranged between the electrodes exceeds 100% in the total area of 100% of the solder appearing in the cross section, and is 30% or less X: Out of the total area of 100% of the solder appearing in the cross section, the area of the solder (solder particles) remaining in the cured product away from the solder portion disposed between the electrodes exceeds 30%
得られた第1,第2,第3の接続構造体(n=15個)において、上下の電極間の接続抵抗をそれぞれ、4端子法により測定した。接続抵抗の平均値を算出した。なお、電圧=電流×抵抗の関係から、一定の電流を流した時の電圧を測定することにより接続抵抗を求めることができる。導通信頼性を下記の基準で判定した。 (4) Connection reliability between upper and lower electrodes In the obtained first, second and third connection structures (n = 15), the connection resistance between the upper and lower electrodes was measured by the four-terminal method, respectively. . The average value of connection resistance was calculated. Note that the connection resistance can be obtained by measuring the voltage when a constant current is passed from the relationship of voltage = current × resistance. The conduction reliability was determined according to the following criteria.
○○:接続抵抗の平均値が8.0Ω以下
○:接続抵抗の平均値が8.0Ωを超え、10.0Ω以下
△:接続抵抗の平均値が10.0Ωを超え、15.0Ω以下
×:接続抵抗の平均値が15.0Ωを超える [Judgment criteria for conduction reliability]
○○: Average value of connection resistance is 8.0Ω or less ○: Average value of connection resistance exceeds 8.0Ω and 10.0Ω or less △: Average value of connection resistance exceeds 10.0Ω and 15.0Ω or less × : Average connection resistance exceeds 15.0Ω
得られた第1,第2,第3の接続構造体(n=15個)において、温度85℃、及び湿度85%の雰囲気中に100時間放置後、隣接する電極間に、5Vを印加し、抵抗値を25箇所で測定した。絶縁信頼性を下記の基準で判定した。 (5) Insulation reliability between adjacent electrodes After the first, second, and third connection structures (n = 15) obtained were left in an atmosphere of 85 ° C. and 85% humidity for 100 hours. 5V was applied between the adjacent electrodes, and the resistance value was measured at 25 locations. Insulation reliability was judged according to the following criteria.
○○:接続抵抗の平均値が107Ω以上
○:接続抵抗の平均値が106Ω以上、107Ω未満
△:接続抵抗の平均値が105Ω以上、106Ω未満
×:接続抵抗の平均値が105Ω未満 [Criteria for insulation reliability]
◯: Average value of connection resistance is 10 7 Ω or more ○: Average value of connection resistance is 10 6 Ω or more, less than 10 7 Ω △: Average value of connection resistance is 10 5 Ω or more, less than 10 6 Ω ×: Connection The average resistance is less than 10 5 Ω
2…第1の接続対象部材
2a…第1の電極
3…第2の接続対象部材
3a…第2の電極
4,4X…接続部
4A,4XA…はんだ部
4B,4XB…硬化物部
11…導電ペースト
11A…はんだ粒子
11B…熱硬化性成分 DESCRIPTION OF
Claims (12)
- 熱硬化性成分と、フラックスと、複数のはんだ粒子とを含み、
前記フラックスの融点での粘度が0.1Pa・s以上、3Pa・s以下であり、
前記はんだ粒子の融点での粘度が0.1Pa・s以上、5Pa・s以下である、導電ペースト。 Including a thermosetting component, a flux, and a plurality of solder particles;
The viscosity at the melting point of the flux is 0.1 Pa · s or more and 3 Pa · s or less,
The electrically conductive paste whose viscosity in melting | fusing point of the said solder particle is 0.1 Pa.s or more and 5 Pa.s or less. - 前記フラックスの融点が80℃以上、190℃以下である、請求項1に記載の導電ペースト。 The conductive paste according to claim 1, wherein the melting point of the flux is 80 ° C or higher and 190 ° C or lower.
- 前記フラックスの融点が100℃以上、190℃以下である、請求項2に記載の導電ペースト。 The conductive paste according to claim 2, wherein the melting point of the flux is 100 ° C or higher and 190 ° C or lower.
- 導電ペースト100重量%中、前記フラックスの含有量が0.1重量%以上、5重量%以下である、請求項1~3のいずれか1項に記載の導電ペースト。 The conductive paste according to any one of claims 1 to 3, wherein the content of the flux is 0.1 wt% or more and 5 wt% or less in 100 wt% of the conductive paste.
- フィラーを含まないか、又は、フィラーを導電ペースト100重量%中に0.25重量%未満で含む、請求項1~4のいずれか1項に記載の導電ペースト。 The conductive paste according to any one of claims 1 to 4, which does not contain a filler or contains the filler in less than 0.25% by weight in 100% by weight of the conductive paste.
- 前記はんだ粒子は、外表面にカルボキシル基が存在するように表面処理されている、請求項1~5のいずれか1項に記載の導電ペースト。 The conductive paste according to any one of claims 1 to 5, wherein the solder particles are surface-treated so that carboxyl groups are present on the outer surface.
- 前記フラックスの融点が、前記はんだ粒子の融点よりも高い、請求項1~6のいずれか1項に記載の導電ペースト。 The conductive paste according to any one of claims 1 to 6, wherein a melting point of the flux is higher than a melting point of the solder particles.
- 少なくとも1つの第1の電極を表面に有する第1の接続対象部材と、
少なくとも1つの第2の電極を表面に有する第2の接続対象部材と、
前記第1の接続対象部材と、前記第2の接続対象部材とを接続している接続部とを備え、
前記接続部が、請求項1~7のいずれか1項に記載の導電ペーストにより形成されており、
前記第1の電極と前記第2の電極とが、前記接続部中のはんだ部により電気的に接続されている、接続構造体。 A first connection target member having at least one first electrode on its surface;
A second connection target member having at least one second electrode on its surface;
A connecting portion connecting the first connection target member and the second connection target member;
The connection part is formed of the conductive paste according to any one of claims 1 to 7,
A connection structure in which the first electrode and the second electrode are electrically connected by a solder portion in the connection portion. - 前記第2の接続対象部材が、樹脂フィルム、フレキシブルプリント基板、リジッドフレキシブル基板又はフレキシブルフラットケーブルである、請求項8に記載の接続構造体。 The connection structure according to claim 8, wherein the second connection target member is a resin film, a flexible printed board, a rigid flexible board, or a flexible flat cable.
- 請求項1~7のいずれか1項に記載の導電ペーストを用いて、少なくとも1つの第1の電極を表面に有する第1の接続対象部材の表面上に、前記導電ペーストを配置する工程と、
前記導電ペーストの前記第1の接続対象部材側とは反対の表面上に、少なくとも1つの第2の電極を表面に有する第2の接続対象部材を、前記第1の電極と前記第2の電極とが対向するように配置する工程と、
前記はんだ粒子の融点以上かつ前記熱硬化性成分の硬化温度以上に前記導電ペーストを加熱することで、前記第1の接続対象部材と前記第2の接続対象部材とを接続している接続部を、前記導電ペーストにより形成し、かつ、前記第1の電極と前記第2の電極とを、前記接続部中のはんだ部により電気的に接続する工程とを備える、接続構造体の製造方法。 Using the conductive paste according to any one of claims 1 to 7, disposing the conductive paste on a surface of a first connection target member having at least one first electrode on the surface;
On the surface opposite to the first connection target member side of the conductive paste, a second connection target member having at least one second electrode on the surface, the first electrode and the second electrode And a step of arranging so as to face each other,
By connecting the first connection target member and the second connection target member by heating the conductive paste above the melting point of the solder particles and above the curing temperature of the thermosetting component, And a step of electrically connecting the first electrode and the second electrode with a solder portion in the connection portion, the method comprising: forming the conductive paste; - 前記第2の接続対象部材を配置する工程及び前記接続部を形成する工程において、加圧を行わず、前記導電ペーストには、前記第2の接続対象部材の重量が加わる、請求項10に記載の接続構造体の製造方法。 The weight of the second connection target member is added to the conductive paste without applying pressure in the step of arranging the second connection target member and the step of forming the connection part. Method for manufacturing the connection structure of the present invention.
- 前記第2の接続対象部材が、樹脂フィルム、フレキシブルプリント基板、リジッドフレキシブル基板又はフレキシブルフラットケーブルである、請求項10又は11に記載の接続構造体の製造方法。 The method for manufacturing a connection structure according to claim 10 or 11, wherein the second connection target member is a resin film, a flexible printed board, a rigid flexible board, or a flexible flat cable.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020167015288A KR102392995B1 (en) | 2014-06-05 | 2015-06-02 | Conductive paste, connected structure and method for producing connected structure |
JP2015528740A JP5860191B1 (en) | 2014-06-05 | 2015-06-02 | Conductive paste, connection structure, and manufacturing method of connection structure |
CN201580004070.7A CN105900180B (en) | 2014-06-05 | 2015-06-02 | The manufacturing method of conductive paste, connection structural bodies and connection structural bodies |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-116583 | 2014-06-05 | ||
JP2014116583 | 2014-06-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015186704A1 true WO2015186704A1 (en) | 2015-12-10 |
Family
ID=54766773
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/065905 WO2015186704A1 (en) | 2014-06-05 | 2015-06-02 | Conductive paste, connected structure and method for producing connected structure |
Country Status (5)
Country | Link |
---|---|
JP (2) | JP5860191B1 (en) |
KR (1) | KR102392995B1 (en) |
CN (1) | CN105900180B (en) |
TW (1) | TWI670729B (en) |
WO (1) | WO2015186704A1 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017033930A1 (en) * | 2015-08-24 | 2017-03-02 | 積水化学工業株式会社 | Electroconductive material and connection structure |
JP2017112312A (en) * | 2015-12-18 | 2017-06-22 | 日立化成株式会社 | Conductive adhesive composition, connection structure, and semiconductor light emitting element mounting flexible wiring board |
JP2019050347A (en) * | 2017-09-08 | 2019-03-28 | 株式会社タムラ製作所 | Method for manufacturing electronic substrate and anisotropic conductive paste |
JP2020188268A (en) * | 2015-12-18 | 2020-11-19 | 昭和電工マテリアルズ株式会社 | Conductive adhesive composition, connection structure, and semiconductor light emitting element mounting flexible wiring board |
JP2022160604A (en) * | 2020-07-14 | 2022-10-19 | 昭和電工マテリアルズ株式会社 | Conductive adhesive composition, connection structure, and semiconductor light emitting element mounting flexible wiring board |
JP7389657B2 (en) | 2020-01-21 | 2023-11-30 | 積水化学工業株式会社 | Conductive paste and connection structure |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101820468B1 (en) * | 2016-11-21 | 2018-01-19 | ㈜ 엘프스 | Self-assembled conductive bonding Paste |
JP7184759B2 (en) * | 2017-12-22 | 2022-12-06 | 積水化学工業株式会社 | Conductive material, method for storing conductive material, method for manufacturing conductive material, and method for manufacturing connection structure |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004108345A1 (en) * | 2003-06-09 | 2004-12-16 | Senju Metal Industry Co., Ltd. | Solder paste |
JP2006035259A (en) * | 2004-07-27 | 2006-02-09 | Denso Corp | Solder paste |
WO2010027017A1 (en) * | 2008-09-05 | 2010-03-11 | 住友ベークライト株式会社 | Electroconductive connecting material, method for connecting terminals to each other using the electroconductive connecting material, and method for manufacturing connecting terminal |
WO2010052871A1 (en) * | 2008-11-06 | 2010-05-14 | 住友ベークライト株式会社 | Electronic device manufacturing method and electronic device |
WO2011158666A1 (en) * | 2010-06-15 | 2011-12-22 | ソニーケミカル&インフォメーションデバイス株式会社 | Process for production of connected structure |
JP2012064853A (en) * | 2010-09-17 | 2012-03-29 | Sekisui Chem Co Ltd | Adhesive for bonding semiconductor element and bonding method of semiconductor element |
JP5320523B1 (en) * | 2012-02-21 | 2013-10-23 | 積水化学工業株式会社 | Conductive particle, method for producing conductive particle, conductive material, and connection structure |
JP2013235974A (en) * | 2012-05-09 | 2013-11-21 | Sekisui Chem Co Ltd | Method for manufacturing semiconductor device, and semiconductor bonding adhesive |
JP2014078480A (en) * | 2012-09-24 | 2014-05-01 | Tamura Seisakusho Co Ltd | Anisotropic conductive paste and printed wiring board using the same |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008023452A1 (en) | 2006-08-25 | 2008-02-28 | Sumitomo Bakelite Co., Ltd. | Adhesive tape, joint structure, and semiconductor package |
JP4669905B2 (en) * | 2008-03-27 | 2011-04-13 | 積水化学工業株式会社 | Conductive particles, anisotropic conductive materials, and connection structures |
US8420722B2 (en) * | 2008-07-10 | 2013-04-16 | Electronics And Telecommunications Research Institute | Composition and methods of forming solder bump and flip chip using the same |
KR101420547B1 (en) * | 2009-10-15 | 2014-07-17 | 히타치가세이가부시끼가이샤 | Conductive adhesive, solar cell, method for manufacturing solar cell, and solar cell module |
WO2011052615A1 (en) * | 2009-10-28 | 2011-05-05 | 住友ベークライト株式会社 | Conductive connection material and terminal-to-terminal connection method using same |
WO2011132658A1 (en) * | 2010-04-22 | 2011-10-27 | 積水化学工業株式会社 | Anisotropic conductive material and connection structure |
CN103843469B (en) * | 2011-09-30 | 2017-05-03 | 株式会社村田制作所 | Electronic device, joining material, and method for producing electronic device |
JP5613220B2 (en) * | 2011-12-20 | 2014-10-22 | 積水化学工業株式会社 | Electronic component connection material and connection structure |
JP2013251366A (en) * | 2012-05-31 | 2013-12-12 | Sony Corp | Manufacturing method of assembly, assembly, and electronic apparatus |
CN104380392B (en) * | 2012-07-03 | 2016-11-23 | 积水化学工业株式会社 | The electroconductive particle of tape insulation particle, conductive material and connection structural bodies |
JP6112797B2 (en) * | 2012-07-30 | 2017-04-12 | 国立大学法人大阪大学 | Electronic component mounting method, circuit board manufacturing method, electronic component solder joint formation method, printed wiring board with connection layer, and sheet-like joining member |
JP2014056816A (en) * | 2012-08-10 | 2014-03-27 | Sekisui Chem Co Ltd | Conductive material and connection structure |
-
2015
- 2015-06-02 JP JP2015528740A patent/JP5860191B1/en active Active
- 2015-06-02 KR KR1020167015288A patent/KR102392995B1/en active IP Right Grant
- 2015-06-02 CN CN201580004070.7A patent/CN105900180B/en active Active
- 2015-06-02 WO PCT/JP2015/065905 patent/WO2015186704A1/en active Application Filing
- 2015-06-05 TW TW104118394A patent/TWI670729B/en active
- 2015-12-14 JP JP2015242830A patent/JP2016103481A/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004108345A1 (en) * | 2003-06-09 | 2004-12-16 | Senju Metal Industry Co., Ltd. | Solder paste |
JP2006035259A (en) * | 2004-07-27 | 2006-02-09 | Denso Corp | Solder paste |
WO2010027017A1 (en) * | 2008-09-05 | 2010-03-11 | 住友ベークライト株式会社 | Electroconductive connecting material, method for connecting terminals to each other using the electroconductive connecting material, and method for manufacturing connecting terminal |
WO2010052871A1 (en) * | 2008-11-06 | 2010-05-14 | 住友ベークライト株式会社 | Electronic device manufacturing method and electronic device |
WO2011158666A1 (en) * | 2010-06-15 | 2011-12-22 | ソニーケミカル&インフォメーションデバイス株式会社 | Process for production of connected structure |
JP2012064853A (en) * | 2010-09-17 | 2012-03-29 | Sekisui Chem Co Ltd | Adhesive for bonding semiconductor element and bonding method of semiconductor element |
JP5320523B1 (en) * | 2012-02-21 | 2013-10-23 | 積水化学工業株式会社 | Conductive particle, method for producing conductive particle, conductive material, and connection structure |
JP2013235974A (en) * | 2012-05-09 | 2013-11-21 | Sekisui Chem Co Ltd | Method for manufacturing semiconductor device, and semiconductor bonding adhesive |
JP2014078480A (en) * | 2012-09-24 | 2014-05-01 | Tamura Seisakusho Co Ltd | Anisotropic conductive paste and printed wiring board using the same |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017033930A1 (en) * | 2015-08-24 | 2017-03-02 | 積水化学工業株式会社 | Electroconductive material and connection structure |
JP2017112312A (en) * | 2015-12-18 | 2017-06-22 | 日立化成株式会社 | Conductive adhesive composition, connection structure, and semiconductor light emitting element mounting flexible wiring board |
JP2020188268A (en) * | 2015-12-18 | 2020-11-19 | 昭和電工マテリアルズ株式会社 | Conductive adhesive composition, connection structure, and semiconductor light emitting element mounting flexible wiring board |
JP7321979B2 (en) | 2015-12-18 | 2023-08-07 | 株式会社レゾナック | CONDUCTIVE ADHESIVE COMPOSITION, CONNECTION STRUCTURE, AND FLEXIBLE WIRING BOARD WITH SEMICONDUCTOR LIGHT EMITTING DEVICE |
JP2019050347A (en) * | 2017-09-08 | 2019-03-28 | 株式会社タムラ製作所 | Method for manufacturing electronic substrate and anisotropic conductive paste |
JP7389657B2 (en) | 2020-01-21 | 2023-11-30 | 積水化学工業株式会社 | Conductive paste and connection structure |
JP2022160604A (en) * | 2020-07-14 | 2022-10-19 | 昭和電工マテリアルズ株式会社 | Conductive adhesive composition, connection structure, and semiconductor light emitting element mounting flexible wiring board |
JP7405196B2 (en) | 2020-07-14 | 2023-12-26 | 株式会社レゾナック | Conductive adhesive composition, connection structure, and flexible wiring board with semiconductor light emitting device mounted |
Also Published As
Publication number | Publication date |
---|---|
TW201606797A (en) | 2016-02-16 |
CN105900180A (en) | 2016-08-24 |
JP5860191B1 (en) | 2016-02-16 |
CN105900180B (en) | 2018-07-06 |
KR102392995B1 (en) | 2022-05-02 |
KR20170016313A (en) | 2017-02-13 |
JPWO2015186704A1 (en) | 2017-04-20 |
JP2016103481A (en) | 2016-06-02 |
TWI670729B (en) | 2019-09-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5860191B1 (en) | Conductive paste, connection structure, and manufacturing method of connection structure | |
JP5830196B1 (en) | Conductive paste, connection structure, and manufacturing method of connection structure | |
JP6329144B2 (en) | Conductive paste and method for producing conductive paste | |
JP6577867B2 (en) | Conductive paste, connection structure, and manufacturing method of connection structure | |
JP5819026B1 (en) | Method for manufacturing connection structure | |
JP6557591B2 (en) | Conductive film, connection structure, and manufacturing method of connection structure | |
JP5851071B1 (en) | Conductive paste, connection structure, and manufacturing method of connection structure | |
JP5966101B1 (en) | Conductive paste, connection structure, and manufacturing method of connection structure | |
JP5966102B1 (en) | Conductive paste, connection structure, and manufacturing method of connection structure | |
JP2016126878A (en) | Conductive paste, connection structure and method for producing connection structure | |
JP2016126877A (en) | Conductive paste, connection structure and method for producing connection structure | |
JP6085031B2 (en) | Method for manufacturing connection structure | |
JP2016062768A (en) | Manufacturing method of connection structure, and connection structure | |
WO2016035637A1 (en) | Method of manufacturing connection structure | |
JP2016066610A (en) | Manufacturing method of connection structure | |
JP2016066614A (en) | Conductive paste, connection structure and method for producing connection structure | |
JP2016058389A (en) | Manufacturing method of connection structure | |
JP2016076355A (en) | Manufacturing method of connection structure, and connection structure | |
JP2016066615A (en) | Conductive paste, connection structure and method for producing connection structure | |
JP2016126876A (en) | Conductive material, connection structure and method for producing connection structure | |
JP2016076557A (en) | Manufacturing method of connection structure, and connection structure | |
JP2016076354A (en) | Manufacturing method of connection structure, and connection structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2015528740 Country of ref document: JP Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15803849 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20167015288 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 15803849 Country of ref document: EP Kind code of ref document: A1 |