WO2015180996A1

WO2015180996A1 - Device comprising at least two light organic emitting diodes

Info

Publication number: WO2015180996A1
Application number: PCT/EP2015/060933
Authority: WO
Inventors: Mohamed Khalifa; Bruno Dussert-Vidalet; Mehdi BELOUCIF; Steffen SCHMITZ
Original assignee: Astron Fiamm Safety
Priority date: 2014-05-26
Filing date: 2015-05-19
Publication date: 2015-12-03
Also published as: FR3021460A1; EP3175492A1; FR3021460B1

Abstract

The present invention relates to a device comprising at least two organic light emitting diodes including, on a substrate (100), a lower layer (200), an organic layer (300) and an upper layer (500), characterized in that: - said device comprises an isolated area (250) of the lower layer (200) separated from a remaining area of the lower layer (200) by a trench (50); - a contact point (400) of the first electrode is positioned in electrical continuity with the remaining area of the lower layer (200); - said device comprises a succession of two-layer stacks comprising an insulating layer (610, 620, 630) and a conductive layer (710, 720, 730).

Description

"Device comprising at least two organic light-emitting diodes"

FIELD OF THE INVENTION

The present invention generally relates to organic light emitting diodes. It receives for advantageous application a system of electrical connectivity by means of electrical tracks for the purpose of addressing organic light emitting diodes.

BACKGROUND

A light-emitting diode, better known in English under the acronym LED for "Light Emitting Diode", is a semiconductor with physical properties such that the light-emitting diode has the ability to directly convert electricity into light, while being unrivaled efficiency in terms of energy consumption. Light-emitting diode illumination allows a homogeneous distribution of the light beam; this lighting can especially be very close to the light of day.

It is these advantageous characteristics that have attracted designers to take an increasing interest in light-emitting diodes for automotive applications, for example, or in the field of lighting. These light sources also represent excellent opportunities for designers. For example, it is possible to combine several diodes to create different shapes, luminance sets (organic light-emitting diodes having, for example, lower light radiation than other diodes) and thus obtain original visual effects. Current technologies, however, have limitations. Organic light-emitting diodes, in particular, have a constraining process because of the high sensitivity to water and air of the organic layer, thereby requiring protection by encapsulation of this layer. On the other hand, arrangements must be made to avoid short circuits; the production of elementary light sources such as organic electroluminescent diodes in large size requires for example a separation of two electrodes: the anode and the cathode.

This separation can be ensured firstly by chemical etching and / or laser ablation of the first electrode deposited on a glass substrate for example, and secondly by the organic layers deposited between the anode and the cathode. . The shape of the "OLED" type light sources is defined by metal stencils (masks), in particular for the deposition of the organic layers and the deposition of the metal cathode. The active surfaces of organic light-emitting diodes always have a full-surface light.

The electrical contact system is provided by anode and cathode pads. To form organic light-emitting diodes over a large area and for a plurality of elementary light sources, an electrical connection architecture in series or in parallel is used. In particular, a so-called "active" matrix is used in reference to a technique for addressing elementary light sources, that is to say how the electrical information is transported to each elementary light source. With this type of configuration, each elementary light source is controlled independently of the others. The manufacturing process begins with the realization of circuits that will allow to supply power to the organic light emitting diodes. Then, the organic layers are deposited on the matrix to form an organic diode on each elementary light source.

In this type of connection, all the elementary light sources forming organic light-emitting diodes light up at the same time. To address the elementary light sources separately and independently on the same substrate, the contacts for the cathode and / or the contacts for the anode of all the elementary light sources must be separated. This separation is provided by electrical tracks or electrical wires. These electrical tracks must be mechanically separated to avoid a short circuit, which limits the space used and limits their electrical conductivity.

The present invention solves all or at least some of the disadvantages of current techniques. To overcome these problems, the present invention also proposes a device comprising at least two organic light-emitting diodes comprising an electrical connection system optimizing the space used, while limiting the effects of the electrical conductivity of the connecting tracks.

SUMMARY OF THE INVENTION

The present invention relates to a device comprising at least two organic light-emitting diodes comprising, on a substrate, a lower layer in which at least a first electrode is located, an organic layer positioned above the lower layer and a layer at least partially positioned on the organic layer and wherein is located at least in part, for each diode, a second electrode. Advantageously, the device comprises:

a plurality of isolated areas of the lower layer; said zones being separated from a remaining area of the lower layer by a trench and the remaining area at least partly forming the first electrode;

a resumption of contact of the first electrode positioned in electrical continuity with the remaining zone of the lower layer;

a first bilayer stack comprising a first insulating layer and a first conductive layer; said stack being configured so that the first insulating layer at least partially covers the upper layer so as to leave exposed, for each diode, a portion protruding from the upper layer forming the second electrode of each diode, and in that that at least the first conductive layer, while being electrically isolated from the other diodes, covers at least partially at a time: the first insulating layer, at least the projecting portion of at least a first diode not covered by the first insulating layer; and a first isolated area; said first insulated area, partly covered by the first conductive layer, forming a contact recovery for said first diode; a second bilayer stack comprising a second insulating layer and a second conductive layer; said stack being configured so that the second insulating layer at least partially covers at least the first conductive layer, and in that at least the second conductive layer, while being electrically isolated from the first diode, at least partially overlaps with both: the second insulating layer, at least the projecting portion of at least a second diode not covered either by the first insulating layer, or by the second insulating layer and a second insulated zone; said second insulated area, covered by the second conductive layer, forming a contact recovery for said second diode.

Particularly advantageously, arrangements are made on the device comprising at least two organic light-emitting diodes according to the present invention to avoid the possible risks of short circuit. In particular, the method according to the invention comprises forming an isolated area of the lower layer relative to remaining areas of the lower layer.

The present invention also relates to a method of producing a device comprising at least two organic electroluminescent diodes comprising the formation of a lower layer in which at least a first electrode is located on a substrate. Advantageously, the method comprises the following steps:

forming a plurality of isolated areas of the lower layer so as to be separated from a remaining area of said lower layer by a trench, said remaining area forming at least partly the first electrode,

formation of an organic layer above the lower layer,

- formation of a contact recovery configured so as to be positioned in electrical continuity with the remaining area of the lower layer,

forming an upper layer positioned at least partially on the organic layer, said upper layer comprising at least one second electrode for each of the diodes,

forming a first bilayer stack comprising a first insulating layer and a first conductive layer; said stack being configured so that the first insulating layer at least partially covers the upper layer so as to leave exposed, for each diode, a portion protruding from the upper layer forming the second electrode of each diode, and in that that at least the first conductive layer, while being electrically isolated from the other diodes, covers at least in part at a time: the first insulating layer, at least the projecting portion of at least a first diode not covered by the first insulating layer and a first isolated area; said first insulated area, covered by the first conductive layer, forming a contact recovery for said first diode,

forming a second bilayer stack comprising a second insulating layer and a second conductive layer; said stack being configured so that the second insulating layer at least partially covers at least the first conductive layer, and in that at least the second conductive layer, while being electrically isolated from the first diode, at least partially overlaps with both: the second insulating layer, at least the projecting portion of at least a second diode not covered either by the first insulating layer, or by the second insulating layer and a second insulated zone; said second insulated area, covered by the second conductive layer, forming a contact recovery for said second diode.

Thus, the present invention proposes a simple and inexpensive elementary light source addressing method which, advantageously thanks to laser irradiation etching, avoids the problems inherent in organic light-emitting diode manufacturing processes (sealing problems of the electroluminescent light-emitting diodes). organic layers during wet etching, short circuit problems, etc.). On the other hand, this method makes it possible to produce an organic light-emitting diode which optimizes the size and more specifically the architecture of the addressing tracks of elementary light sources by the superposition of conductive layers electrically separated by insulating intermediate layers.

BRIEF INTRODUCTION OF FIGURES

Other features, objects and advantages of the present invention will appear on reading the detailed description which follows, with reference to the appended drawings, given by way of nonlimiting examples, and in which:

FIG. 1 represents a schematic view in longitudinal section of a stack of layers forming an organic light emission device according to the prior art.

FIG. 2 represents a schematic view in longitudinal section of a stack of layers according to one embodiment of the invention, comprising a laser-irradiated lower layer, an organic layer and an upper layer. The etching of the lower layer forms a trench separating an isolated area from the remaining areas of the lower layer.

FIG. 3 illustrates a schematic view from above of the stack of layers. According to the embodiment shown, the upper layer comprises a plurality of distinct zones forming elementary light sources in the form of organic light-emitting diodes.

FIG. 4 illustrates a schematic view from above of the formation of a first insulating layer covering a portion of the stack of layers.

FIG. 5 illustrates a schematic view from above of the formation of a first conductive layer covering at least partly the first insulating layer.

FIG. 6 illustrates a schematic view from above of the formation of a second insulating layer covering at least partly the first conductive layer.

FIG. 7 illustrates a schematic view from above of the formation of a second conductive layer covering at least partly the second insulating layer.

FIG. 8 illustrates a schematic view from above of the formation of a third insulating layer covering at least partly the second conductive layer.

FIG. 9 illustrates a schematic view from above of the formation of a third conductive layer covering at least partly the third insulating layer.

FIG. 10 illustrates a schematic view from above of a step of placing a cover over the stack of layers; said cover being previously coated with a layer of adhesive and comprising at least one through opening, giving direct access to certain layers of the stack.

For the sake of clarity, the elements in the figures are not represented to scale.

DETAILED DESCRIPTION

It is specified that in the context of the present invention, the terms "on" or "above" do not necessarily mean "in contact with". Thus, for example, the deposition of a layer on another layer does not necessarily mean that the two layers are directly in contact with each other but that means that one of the layers at least partially covers the other being either directly in contact with it, or being separated from it by a film, another layer or another element.

It is also specified that a layer may comprise a plurality of layers. On the other hand, the term "layer" does not necessarily mean a full plate distribution on the substrate. In a particularly advantageous manner, the present invention is applicable both for the top-emitting devices (in English "top emission") and for the devices to emission down (in English "bottom emission"). Before going into detail of preferred embodiments of the invention with reference to the drawings in particular, other optional features of the invention, which can be implemented in combination in any combination or alternatively, are indicated below:

- Advantageously, the device comprises at least a third diode.

- Preferentially, the device comprises a third bilayer stack comprising a third insulating layer and a third conductive layer; said third stack being configured so that the third insulating layer partly covers at least the second conductive layer, and in that at least the third conductive layer, while being electrically isolated from the other diodes, at least partially overlaps with both: the third insulating layer, at least the projecting portion of at least a third diode not covered either by the first insulating layer, by the second insulating layer, or by the third insulating layer and a third isolated zone; said third isolated zone, covered by the third conductive layer, forming a contact recovery for said third diode.

- Advantageously, the first conductive layer or the second conductive layer covers the projecting portion of the third diode not covered either by the first insulating layer, or by the second insulating layer.

Preferably, the patterns of the second electrodes of each diode are configured so as to be aligned.

Advantageously, the layers of the plurality of insulating layers are superposable and of the same size.

- Each conductive layer is preferably deposited so as to form lateral projections; said projections being configured to be in electrical continuity on the one hand with a portion of the projecting portion of at least one diode and on the other hand with one of the plurality of isolated areas.

Preferably, each overlapping portion of each diode is covered by one of the conductive layers of one of the two-layer stacks.

- Advantageously, the device comprises a cover provided with at least one through opening; said opening being positioned so as to allow access to each of the contact occasions of each diode formed by each of the layers conductors each covering one of the plurality of isolated areas and contacting the second electrode.

Preferably, at least one of the insulating layers comprises at least one organic layer and / or at least one inorganic layer.

- Preferably, the trench has a closed contour transversely to the thickness.

- Optionally, the organic layer is positioned in part at least on the isolated area.

Preferably, the substrate comprises a material selected from glass, metal, plastic, fabric or paper.

In a particularly advantageous manner, after the formation of the second bilayer stack, the step of forming at least one additional bilayer stack is repeated until each overflowing portion of each diode is covered by one of the conductive layers. one of the two-layer stacks.

As a preference, the formation of each insulating layer of the succession of bilayer stacks comprises a masking step common to each of the insulating layers.

Preferably, the formation of each conductive layer of the succession of bilayer stacks comprises a deposition performed so as to form lateral projections; said projections being configured to be in electrical continuity on the one hand with a portion of the projecting portion of at least one diode and on the other hand with one of the plurality of isolated areas.

Preferably, the formation of at least one of the insulating layers is carried out by liquid, thermal evaporation or chemical deposition.

Advantageously, the formation of at least one of the conductive layers is carried out by thermal evaporation, cathodic sputtering, atomic layer deposition, chemical vapor deposition.

Preferably, the formation of the organic layer is carried out by thermal evaporation, cathodic sputtering, atomic layer deposition, chemical vapor deposition.

- Advantageously, the formation of the plurality of isolated areas of the lower layer is performed by etching the lower layer so as to form a trench separating said isolated areas of the remaining areas of the lower layer; said trench having a depth equal to the thickness of said lower layer.

Preferably, after the formation of the succession of bilayer stacks, a step is made to place a cover over at least the last bilayer stack; said hood being previously coated with a layer of adhesive and having at least one through opening; said opening being positioned so as to allow access to each of the contacts of contact of each diode formed by each of the conductive layers each covering one of the plurality of isolated areas and the resumption of contact of the first electrode.

As indicated above, the purpose of the following method is to provide an organic light emitting device comprising an electrical connection system making it possible to optimize the addressing of elementary light sources, while allowing a small space requirement.

In a sequence of steps for producing an organic light-emitting diode according to the prior art, illustrated in FIG. 1, a stack of layers is formed on a substrate 100. A lower layer 200 is first deposited on the substrate 100. An organic layer 300 is then deposited so as to cover part of the lower layer 200. Preferentially, the lower layer 200 protrudes laterally from the organic layer 300. Advantageously, the lower layer 200 has a portion not covered by the organic layer. 300.

An upper layer 500 is deposited so as to at least partially cover the organic layer 300. Preferably, the upper layer 500 covers the surface of the organic layer 300, without being in contact with the lower layer 200. Preferably, the upper layer 500 s extends beyond the organic layer 300 as illustrated in FIG. The upper layer 500 protrudes laterally from the stack of layers. The projecting portion of the lower layer 200 and the projecting portion of the upper layer 500 are neither superimposed nor in contact. They may be located on opposite edges of the stack of layers.

Preferentially, the lower layer 200 forms a first electrode, preferably the anode. An electrical contact recovery 400 is typically made from said lower layer 200. This contact recovery 400 is preferably made of a metallic material. The upper layer 500 forms a second electrode, preferably the cathode.

Figures 2 to 10 illustrate the steps of the method forming the organic light emitting device according to the present invention.

Figures 2 and 3 illustrate a schematic representation, respectively in longitudinal section and in top view, of a stack of layers for forming the organic light emitting diode. In a first step, a layer is formed lower 200 on a substrate 100. Advantageously, the substrate 100 is a flat plate made of a transparent material. Preferably, the substrate 100 is made of glass. According to variants, the substrate 100 may be chosen from metal, plastic, fabric or paper.

Preferably, the lower layer 200 represents a first electrode, preferably the anode. Advantageously, the lower layer 200 is composed of an inorganic material.

According to a preferred embodiment where the emission of light is through the substrate 100, the lower layer 200 is selected from a transparent or semi-transparent material. A material is considered transparent (respectively semi-transparent) if it lets the light waves pass through a certain wavelength range, ie it does not attenuate (respectively partially) the intensity light waves passing through it.

The lower layer 200 is preferably formed of a transparent conductive oxide (In English, acronym: TCO for "Transparent Conducting Oxide"). Optionally, the lower layer 200 may be composed of a stack of TCO / Ag / TCO / Ag type layers, where Ag represents silver. According to a particularly advantageous embodiment, the lower layer 200 is selected from a material of the type of indium tin oxide (ITO: Indium Tin Oxide). This material has interesting electrical conductivity properties and optical transparency for the manufacture of organic light emitting device. Optionally, the lower layer 200 is transparent at least 50%, to allow the transmission of light. Preferably, the lower layer 200 has a thickness of the order of several hundred nanometers (nm = nanometer or 10 ^"9 meters).

At the end of the step of forming the lower layer 200 on the substrate 100, a step is performed for etching said lower layer 200, made, for example, by means of a laser. A trench 50 is preferentially formed in the lower layer 200, following etching, for example, carried out by laser irradiation. Trench 50 follows a closed line. The trench 50 has a depth preferably equal to the thickness of the lower layer 200. The trench 50 preferably has a width of at least 10 microns. The trench 50 thus formed makes it possible to electrically separate an isolated zone 250 from the lower layer 200 relative to the remainder of the lower layer 200 and possibly access to the substrate 100. The use of a laser has the advantage of forming patterns of different shapes in the lower layer 200. The pattern may be selected from a round, oblong, square, or still rectangular. According to a preferred embodiment, the trench 50 has a section closed transversely to the thickness. The laser irradiation etching step creates an insulated area 250 within the trench 50 of the lower layer 200 which is electrically insulated from the remaining area of the lower layer 200 outside the trench According to a preferred embodiment, the insulated zone 250 comprises a plurality of isolated zones 251, 252, 253. Preferably, the zones of the plurality of isolated zones 251, 252, 253 are grouped together and separated from one another by a trench 50.

Particularly advantageously, the laser irradiation does not require a step of protecting the areas of the lower layer 200 not exposed to the laser. This has the advantage of avoiding the use of a complex process that is potentially incompatible with the manufacture of light-emitting diodes.

A step of forming an organic layer 300 is then performed. The organic layer 300 is advantageously composed of one or more sublayers. These sub-layers preferably comprise specific materials, making it possible to improve the injection of electrons and holes, and consequently to improve the efficiency of the light emission device. By way of example, the organic layer 300 may especially comprise a hole injection layer, a hole transport layer, a light emission layer produced by the recombination of the holes and electrons, a transport layer. electrons and an electron injection layer.

The thickness of the organic layer 300 is advantageously between 10 nm (nm = nanometer = 10 ^-9 meter) and 200 nm According to a preferred embodiment, the conditions for forming the various sub-layers of the organic layer. The presence of impurities depends on the atmosphere in which the structures are made.

Particularly advantageously, the organic layer 300 may be deposited according to various techniques such as thermal evaporation, spin coating, thin film deposition (dip coating), spraying. cathodic, the atomic deposition monolayer (in English "atomic layer deposition"), or the chemical deposition monolayer (in English "chemical layer deposition").

Advantageously, the organic layer 300 is deposited on top of the lower layer 200.

According to a preferred embodiment, the organic layer 300 is formed so as to extend, uniformly and continuously, on either side of the trench 50 performed in the lower layer 200, and thus be in contact with at least one of the plurality of isolated areas 251, 252, 253 of the lower layer 200. Particularly advantageously, the portion of the organic layer 300 overflowing on least one of the isolated zones makes it possible to electrically isolate a possible upper conductive layer covering each of the isolated zones 251, 252, 253 of the lower layer 200.

At the end of the step of forming the organic layer 300, the step of forming the upper layer 500, generally constituting a second electrode, preferably the cathode, is carried out. Advantageously, the upper layer 500 is transparent or opaque. Optionally, it is semi-transparent or mirror. The upper layer 500 is typically made of a metallic material. It may, for example, be of a material such as aluminum or calcium. It is preferably deposited by thermal evaporation or sputtering.

The upper layer 500 is advantageously deposited above the organic layer 300. According to a particularly advantageous embodiment, the upper layer 500 does not extend beyond the organic layer 300. Advantageously, this embodiment prevents a possible contact between the lower layers 200 and 500, which can generate short circuits.

According to a particularly advantageous embodiment illustrated in FIG. 3, the upper layer 500 comprises a plurality of distinct zones 510, 520, 530 disposed on the organic layer 300. Advantageously, each zone forms an elementary light source 510, 520, 530. elementary light source 510, 520, 530 is associated with a separate organic light-emitting diode. The layer 500 thus defines a plurality of second electrodes, for example a plurality of cathodes, each delimiting an elementary light source 510, 520, 530 for each of the diodes; the sources also having in common the organic layer 300 and the electrode formed in the layer 200. Advantageously, a contact resumption 400 is carried out so that it is not positioned on the isolated areas 251, 252, 253 of the lower layer 200. According to a preferred embodiment, this contact recovery 400 acts as a common anode for all of the organic light emitting diodes of the device. FIG. 4 illustrates the formation of a first insulating layer 610. This first insulating layer 610 is advantageous deposited so as to partially cover at least the top layer 500. Particularly advantageously, the first insulating layer 610 partially covers at least all the elementary light sources 510, 520, 530. It is preferable to leave at least a portion of the upper layer 500 not covered by said first insulating layer 610. Advantageously, the first insulating layer 610 is deposited so as to leave uncovered, for each diode, an overflowing portion 510a, 520a, 530a of each of the elementary light sources 510, 520, 530. The term "overflowing part" , a part that is not surmounted or covered by another layer. For example, an overflowing portion of a layer may be understood as a pattern that protrudes laterally from a rectangular pattern.

In a particularly advantageous manner, the first insulating layer 610 may be deposited according to various techniques such as thermal evaporation, spin coating ("spin coating"), thin film deposition (in English "inkjet"), thin film deposition. (English "dip coating"), cathode sputtering, the atomic layer deposition (in English "atomic layer deposition"), or the chemical deposit monolayer (in English "chemical layer deposition").

Preferably, to achieve the pattern of the first insulating layer 610 is used a stencil (or mask) preferably metal. Advantageously, this stencil is rectangular or square. Preferably, this stencil is configured to adapt to the shape of the patterns of the elementary light sources 510, 520, 530. This stencil advantageously allows to leave exposed the protruding portions 510a, 520a, 530a of each diode.

As a preference, the first insulating layer 610 comprises at least one organic layer and / or at least one inorganic layer. The first insulating layer 610 may comprise, for example, an oxide (for example silicon oxide, aluminum oxide) or a nitride (for example silicon nitride).

Preferably, the thickness of the first insulating layer 610 is between 2 nm and 1 micron. Advantageously, the thickness of the first insulating layer 610 is of the order of 100 nm.

FIG. 5 illustrates the formation of a first conductive layer 710. This first conductive layer 710 is advantageous deposited so as to partially cover at least the first insulating layer 610, a part of the upper layer 500 not covered by the first insulating layer 610 (i.e. at least one protruding portion 510a, 520a, 530a exposed to at least one light source elementary 510, 520, 530) and a first insulated area 251 among the plurality of insulated areas 251, 252, 253 of the lower layer 200.

Particularly advantageously, the first conductive layer 710 forms an electrically conductive track configured to electrically connect an overflowing portion 510a, 520a, 530a left exposed of at least a first elementary light source 510, 520, 530 (that is ie a second electrode of a first diode) to the first insulated area 251 of the lower layer 200. Advantageously, the portion of the first conductive layer 710 covering the first insulated area 251 forms a contact resumption for the at least at least one elementary light source 510, 520, 530 (in other words for at least one first diode) covered by said first conducting layer 710. This first conducting layer 710 advantageously allows addressing of a first light source 510 of the upper layer 300 to from a contact recovery positioned on the first insulated area 251 of the lower layer 200.

Advantageously, the first conductive layer 710 may be deposited according to various techniques such as thermal evaporation, spin coating (in English "spin coating"), the deposition of thin films (in English "inkjet"). "Dip coating"), sputtering, atomic layer deposition (in English "atomic layer deposition"), or the chemical deposit monolayer (in English "chemical layer deposition").

Preferably, the thickness of the first conductive layer 710 is between 10 nm and 5 microns. Advantageously, the thickness of the conductive layer 710 is of the order of 500 nm. The invention proposes to deposit a bilayer stack comprising an insulating layer 610 and a conductive layer 710 for each separate addressing of elementary light sources 510, 520, 530, each forming an organic light-emitting diode.

FIGS. 6 to 9 illustrate the steps of producing a method for addressing a plurality of distinct elementary light sources, that is to say a plurality of diodes from the same organic layer 300. After the deposition of a first conductive layer 710 intended to address a first elementary source 510 of the upper layer 500, a second insulating layer 620 is deposited, as illustrated in FIG. 6. This insulating layer 620 is advantageously deposited so as to cover in part at least the first conductive layer 710. Advantageously, the second insulating layer 620 can be deposited according to the same deposition techniques as previously used for the first insulating layer 610. According to a particularly advantageous embodiment, the second insulating layer 620 uses the same stencil as that used during the formation. of the first insulating layer 610. Preferably, the second insulating layer 620 comprises at least one organic layer and / or at least one inorganic layer. The second insulating layer 620 may comprise, for example, an oxide (for example silicon oxide, aluminum oxide) or a nitride (for example silicon nitride). Preferably, the thickness of the second insulating layer 620 is between 2 nm and 1 micron. Advantageously, the thickness of the second insulating layer 620 is of the order of 100 nm.

FIG. 7 illustrates the deposition of a second conductive layer 720 intended to form an electrically conductive track configured so as to allow addressing of a second elementary source 520 of the upper layer 300 from a resumption of contact positioned on a second insulated area 252 of the lower layer 200. Advantageously, the second conductive layer 720 is separated from the first conductive layer 710 by the second insulating layer 620. Advantageously, the second conductive layer 720, while being electrically isolated from the first diode, covers at least in part at a time: the second insulating layer 620, at least the projecting portion 520a of at least a second diode not covered either by the first insulating layer 610, or by the second insulating layer 630 and a second isolated area 252; said second insulated zone 250, covered by the second conductive layer 720, forming a contact recovery (20b for said second diode.

Figures 8 and 9 reproduce the same steps as those of Figures 6 and 7; these steps being intended for the addressing of a third elementary light source 530 (that is to say of a third diode) of the upper layer 500, a contact recovery of which will advantageously be positioned at a third isolated region 253 of the lower layer 200. After the formation of the second bilayer stack, the step of formation of at least one additional bilayer stack is then repeated until each overflowing portion 510a, 520a, 530a of each diode is covered by one of the conductive layers 710, 720, 730 of one of the two-layer stacks.

According to another embodiment, the first conductive layer 710 or the second conductive layer 720 covers the projecting portion 530a of the third diode not covered either by the first insulating layer 610, or by the second insulating layer 620. FIG. 10 illustrates a step of placing a cover 800 on the stack of layers comprising at least the lower layer 200, the organic layer 300, the upper layer 400, the plurality of insulating layers 610, 620, 630 and conductors 710, 720, 730.

The cover 800 is preferably coated on a first face of a layer of adhesive, before being deposited on the stack of layers. The adhesive layer is preferably spread over the entire surface of the cover 800. The adhesive layer has the advantage, once dry, of not reacting with water or with oxygen (first degradation factors organic materials). The adhesive layer, thus disposed, acts, particularly advantageously, as a sealed protective barrier for the sensitive layers such as the lower layer 200 that is to say the first electrode, the organic layer 300 and the upper layer 500 is the second electrode.

Preferably, the cover 800 is made of a transparent material, configured so as to allow the light to pass. Preferably, the cap 800 is made of glass. Optionally, the hood 800 may be plastic or metal. In a preferred embodiment, the thickness of the cap 800 is about 1 millimeter. In a particularly advantageous manner, the cover 800 may be of various shapes. By way of example, the cover 800 may be prismatic, cylindrical or cubic.

Advantageously, the cover 800 has at least one opening 850 configured so as to be through. Particularly advantageously, the section of the opening 850 in the plane of the organic light-emitting diode, perpendicular to the thickness of said organic light-emitting diode, may take the form of a polygon, or a circular or oblong hole, for example.

Particularly advantageously, the through opening 850 in the hood

800 is configured to position itself above the plurality of isolated areas 251, 252, 253 of the lower layer 200 upon laser irradiation of said lower layer 200 as well as the contact resumption 400 of the first electrode, preferably forming an anode common to all organic light-emitting diodes made on the device.

Particularly advantageously, the opening of the cover 800 is configured to be smaller than the trench 250 of the lower layer 200.

The method according to the invention overcomes not only the problems of short-circuit from contact areas between the lower layer 200, representing a first electrode and the upper layer 500 representing a second electrode (In particular thanks to the trench 50 made in the lower layer 200), but also makes it possible to optimize the architecture of the electrical connections for the purpose of addressing elementary light sources 510, 520, 530 in an organic light-emitting diode.

The invention is not limited to the embodiments described above, but extends to any embodiment within its spirit.

Claims

1. Device comprising at least two organic electroluminescent diodes comprising, on a substrate (100), a lower layer (200) in which at least a first electrode is located, an organic layer (300) positioned above the lower layer ( 200) and an upper layer (500) positioned at least in part on the organic layer (300) and in which at least a portion, for each diode, a second electrode (510, 520, 530),

characterized in that it comprises:

a plurality of isolated areas (251, 252, 253) of the lower layer (200); said zones (251, 252, 253) being separated from a remaining area of the lower layer (200) by a trench (50) and the remaining area (200) at least partly forming the first electrode;

- a contact recovery (400) of the first electrode positioned in electrical continuity with the remaining area of the lower layer (200);

a first bilayer stack comprising a first insulating layer (610) and a first conductive layer (710); said stack being configured such that the first insulating layer (610) at least partially covers the top layer (500) so as to leave exposed, for each diode, an overlying portion (510a, 520a, 530a) of the upper layer (500) forming the second electrode of each diode, and in that at least the first conductive layer (710), while being electrically isolated from the other diodes, covers at least in part at a time: the first insulating layer ( 610), at least the protruding portion (510a) of at least a first diode not covered by the first insulating layer (610) and a first insulated area (251); said first insulated area (251), partially covered by the first conductive layer (710), forming a contact resumption (710b) for said first diode;

a second bilayer stack comprising a second insulating layer (620) and a second conductive layer (720); said stack being configured so that the second insulating layer (620) partly covers at least the first conductive layer (710), and in that at least the second conductive layer (720), while being electrically insulated from the first diode at least partially covers at the same time: the second insulating layer (620), at least the overflowing portion (520a) of at least one second diode not covered by the first insulating layer (610), or by the second insulating layer (630) and a second insulated area (252); said second insulated area (252), covered by the second conductive layer (720), forming a contact resumption (720b) for said second diode.

2. Device according to the preceding claim comprising at least a third diode.

3. Device according to the preceding claim comprising a third bilayer stack comprising a third insulating layer (630) and a third conductive layer (730); said third stack being configured such that the third insulating layer (630) partially overlaps at least the second conductive layer (720), and in that at least the third conductive layer (730), while being electrically insulated from other diodes, covers at least in part at a time: the third insulating layer (630), at least the overflowing portion (530a) of at least one third diode not covered by the first insulating layer (610), or the second insulating layer (620), or by the third insulating layer (630) and a third insulated area (253); said third insulated area (253), covered by the third conductive layer (730), forming a contact resumption (730b) for said third diode.

4. Device according to claim 2 wherein the first conductive layer (710) or the second conductive layer (720) covers the projecting portion (530a) of the third diode not covered either by the first insulating layer (610), or by the second insulating layer (620).

5. Device according to any one of the preceding claims wherein the patterns of the second electrodes of each diode are configured to be aligned.

6. Device according to any one of the preceding claims wherein the layers of the plurality of insulating layers (610, 620, 630) are stackable and of the same size.

7. Device according to the preceding claim wherein each conductive layer (710) is deposited so as to form lateral projections; said projections being configured to be in electrical continuity on the one hand with part of the portion projecting from at least one diode and secondly with one of the plurality of isolated areas (25, 251, 252).

8. Device according to the preceding claim wherein each protruding portion (510a, 520a, 530a) of each diode is covered by one of the conductive layers (710, 720, 730) of one of the two-layer stacks.

9. Device according to any preceding claim comprising a cover (800) provided with at least one through opening; said opening being positioned to allow access to each of the contacts (710b, 720b, 730b) of each diode formed by each of the conductive layers (710, 720, 730) each covering one of the plurality of isolated areas ( 251, 252, 253) and the contact resumption (400) of the second electrode.

10. Device according to any one of the preceding claims wherein at least one of the insulating layers (610, 620, 630) comprises at least one organic layer and / or at least one inorganic layer.

1 1. Device according to any one of the preceding claims wherein the trench (50) has a contour closed transversely to the thickness.

12. Device according to any one of the preceding claims wherein the organic layer (300) is positioned in part at least on the insulated area (250).

The device of any preceding claim wherein the substrate (100) comprises a material selected from glass, metal, plastic, fabric or paper.

14. A method of producing a device comprising at least two organic electroluminescent diodes comprising the formation of a lower layer (200) in which at least a first electrode is located on a substrate (100), characterized in that the method comprises the following steps:

forming a plurality of isolated areas (251, 252, 253) of the lower layer (200) so as to be separated from a remaining area of said bottom layer (200) by a trench (50), said remaining area forming at least part of the first electrode; forming an organic layer (300) over the lower layer (200);

forming a resumption of contact (400) configured to be positioned in electrical continuity with the remaining area of the lower layer (200);

forming an upper layer (500) positioned at least partially on organic layer (300), said upper layer (500) comprising at least one second electrode (510, 520, 530) for each of the diodes;

forming a first bilayer stack comprising a first insulating layer (610) and a first conductive layer (710); said stack being configured such that the first insulating layer (610) at least partially covers the top layer (500) so as to leave exposed, for each diode, an overlying portion (510a, 520a, 530a) of the upper layer (500) forming the second electrode of each diode, and in that at least the first conductive layer (710), while being electrically isolated from the other diodes, covers at least in part at a time: the first insulating layer ( 610), at least the protruding portion (510a) of at least a first diode not covered by the first insulating layer (610) and a first insulated area (251); said first insulated area (251), covered by the first conductive layer (710), forming a contact resumption (710b) for said first diode; forming a second bilayer stack comprising a second insulating layer (620) and a second conductive layer (720); said stack being configured so that the second insulating layer (620) partly covers at least the first conductive layer (710), and in that at least the second conductive layer (720), while being electrically insulated from the first diode at least partially overlaps: the second insulating layer (620), at least the overflowing portion (520a) of at least one second diode not covered by the first insulating layer (610), or the second insulating layer (630) and a second insulated area (252); said second insulated area (250), covered by the second conductive layer (720), forming a contact resumption (720b) for said second diode.

15. Method according to the preceding claim wherein, after forming the second bilayer stack, the step of forming at least one additional bilayer stack is repeated until each overflowing portion (510a, 520a, 530a) of each diode is covered by one of the conductive layers (710, 720, 730) of one of the two-layer stacks.

16. A method according to any one of the two preceding claims wherein the formation of each insulating layer (610, 620, 630) of the succession of bilayer stacks comprises a masking step common to each of the insulating layers (610, 620, 630).

17. A method according to any one of the three preceding claims wherein the formation of each conductive layer (710, 720, 730) of the bilayer stack sequence comprises a deposition performed so as to form lateral projections; said projections being configured to be in electrical continuity on the one hand with a portion of the protruding portion (510a, 520a, 530a) of at least one diode and on the other hand with one of the plurality of isolated areas (251, 252 , 253).

18. A method according to any of the four preceding claims wherein the formation of at least one of the insulating layers (610, 620, 630) is carried out by liquid, thermal evaporation or chemical deposition.

19. A method according to any one of the preceding claims wherein the formation of at least one of the conductive layers (710, 720, 730) is carried out by thermal evaporation, cathodic sputtering, atomic layer deposition, chemical deposition. in the vapor phase.

20. The method according to any of the six preceding claims wherein the formation of the organic layer (300) is carried out by thermal evaporation, cathodic sputtering, atomic layer deposition, chemical vapor deposition.

21. Method according to the preceding claim wherein the formation of the plurality of isolated areas (251, 252, 253) of the lower layer (200) is performed by etching the lower layer (200) so as to form a trench (50) separating said isolated areas (251, 252, 253) of the remaining areas of the lower layer (200); said trench (50) having a depth equal to the thickness of said lower layer (200).

22. A method according to any one of the preceding claims comprising after the formation of the succession of bilayer stacks, a step of placing a cap (800) above at least the last bilayer stack; said cover (800) being previously coated with a layer of adhesive and being provided with at least one through opening; said opening being positioned to allow access to each of the contacts (710b, 720b, 730b) of each diode formed by each of the conductive layers (710, 720, 730) each covering one of the plurality of isolated areas ( 251, 252, 253) and the contact resumption (400) of the first electrode.