WO2015172014A1 - Substrats de saphir de haute qualité et procédé de fabrication desdits substrats de saphir - Google Patents
Substrats de saphir de haute qualité et procédé de fabrication desdits substrats de saphir Download PDFInfo
- Publication number
- WO2015172014A1 WO2015172014A1 PCT/US2015/029875 US2015029875W WO2015172014A1 WO 2015172014 A1 WO2015172014 A1 WO 2015172014A1 US 2015029875 W US2015029875 W US 2015029875W WO 2015172014 A1 WO2015172014 A1 WO 2015172014A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- μηι
- substrate
- μιη
- item
- μγη
- Prior art date
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Cette invention concerne des substrats de saphir appropriés pour la fabrication de semi-conducteurs, caractérisés par des caractéristiques dimensionnelles et de forme supérieures. Lesdits substrats de saphir sont spécifiquement caractérisés en ce qu'ils présentent une très faible planéité locale et gobale (SFQR et GFLR) et un faible coefficient de déviation par rapport au plan (ROA). L'invention concerne en outre un procédé de fabrication de substrats de saphir présentant de très faibles coefficients GFLR SFQR et ROA, ledit procédé étant économe en temps.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201461991186P | 2014-05-09 | 2014-05-09 | |
US61/991,186 | 2014-05-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015172014A1 true WO2015172014A1 (fr) | 2015-11-12 |
Family
ID=54393044
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2015/029875 WO2015172014A1 (fr) | 2014-05-09 | 2015-05-08 | Substrats de saphir de haute qualité et procédé de fabrication desdits substrats de saphir |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2015172014A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105856441A (zh) * | 2016-06-13 | 2016-08-17 | 江苏吉星新材料有限公司 | 一种大尺寸蓝宝石晶体的c向定向技术 |
CN109290853A (zh) * | 2017-07-24 | 2019-02-01 | 蓝思科技(长沙)有限公司 | 一种超薄蓝宝石片的制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040087146A1 (en) * | 2002-10-31 | 2004-05-06 | Strasbaugh, A California Corporation | Method of preparing whole semiconductor wafer for analysis |
US20110160890A1 (en) * | 2009-12-29 | 2011-06-30 | Memc Electronic Materials, Inc. | Methods For Generating Representations of Flatness Defects on Wafers |
US20120289126A1 (en) * | 2006-12-28 | 2012-11-15 | Saint-Gobain Ceramics & Plastics, Inc. | Sapphire substrates and methods of making same |
US20120286818A1 (en) * | 2011-05-11 | 2012-11-15 | Qualcomm Incorporated | Assembly for optical backside failure analysis of wire-bonded device during electrical testing |
US20140117380A1 (en) * | 2012-10-26 | 2014-05-01 | Dow Corning Corporation | Flat sic semiconductor substrate |
-
2015
- 2015-05-08 WO PCT/US2015/029875 patent/WO2015172014A1/fr active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040087146A1 (en) * | 2002-10-31 | 2004-05-06 | Strasbaugh, A California Corporation | Method of preparing whole semiconductor wafer for analysis |
US20120289126A1 (en) * | 2006-12-28 | 2012-11-15 | Saint-Gobain Ceramics & Plastics, Inc. | Sapphire substrates and methods of making same |
US20110160890A1 (en) * | 2009-12-29 | 2011-06-30 | Memc Electronic Materials, Inc. | Methods For Generating Representations of Flatness Defects on Wafers |
US20120286818A1 (en) * | 2011-05-11 | 2012-11-15 | Qualcomm Incorporated | Assembly for optical backside failure analysis of wire-bonded device during electrical testing |
US20140117380A1 (en) * | 2012-10-26 | 2014-05-01 | Dow Corning Corporation | Flat sic semiconductor substrate |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105856441A (zh) * | 2016-06-13 | 2016-08-17 | 江苏吉星新材料有限公司 | 一种大尺寸蓝宝石晶体的c向定向技术 |
CN109290853A (zh) * | 2017-07-24 | 2019-02-01 | 蓝思科技(长沙)有限公司 | 一种超薄蓝宝石片的制备方法 |
CN109290853B (zh) * | 2017-07-24 | 2021-06-04 | 蓝思科技(长沙)有限公司 | 一种超薄蓝宝石片的制备方法 |
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