WO2015169012A1 - Euv photoetching device and exposure method therefor - Google Patents

Euv photoetching device and exposure method therefor Download PDF

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Publication number
WO2015169012A1
WO2015169012A1 PCT/CN2014/085135 CN2014085135W WO2015169012A1 WO 2015169012 A1 WO2015169012 A1 WO 2015169012A1 CN 2014085135 W CN2014085135 W CN 2014085135W WO 2015169012 A1 WO2015169012 A1 WO 2015169012A1
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WO
WIPO (PCT)
Prior art keywords
mask
stage
reflective mask
measurement system
reflective
Prior art date
Application number
PCT/CN2014/085135
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French (fr)
Chinese (zh)
Inventor
郑乐平
许琦欣
王帆
吴飞
Original Assignee
上海微电子装备有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 上海微电子装备有限公司 filed Critical 上海微电子装备有限公司
Priority to CN201480078178.6A priority Critical patent/CN106255922B/en
Publication of WO2015169012A1 publication Critical patent/WO2015169012A1/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Definitions

  • the present invention relates to the field of lithography, and more particularly to an EUV lithography apparatus and an exposure method thereof. Background technique
  • the projection exposure apparatus is used for a projection exposure of a circuit pattern on a reticle through a projection optical system, and the circuit pattern can be projected onto a silicon wafer of an integrated circuit at a magnification of a certain magnification or reduction.
  • the development of integrated circuits follows the "Moore's Law". With the rapid development of IC manufacturing technology, IC integration is gradually increasing, and the wavelength of light used in projection exposure devices is gradually decreasing.
  • the current mainstream lithography technology uses 193nm (Deep UV; DUV). ) The wavelength of the laser. Driven by process innovations such as immersion technology, double exposure and multiple exposures, the lithography limit that can be achieved by DUV wavelengths is gradually approaching.
  • the extreme ultraviolet (EUV) light exposure device (EUVL) with a wavelength of 13.5 nm will show a greater competitive advantage and will undoubtedly become the first choice for next-generation lithography.
  • a typical configuration of the EUV exposure apparatus is as shown in FIG. 1, and includes: a base frame 10, a mask stage 20, a measurement frame 30, a surface sensor 31, an EUV light source 50, an illumination system 42, a projection system 41, and a stone substrate. 60.
  • the EUVL illumination and projection system requires a high degree of vacuum, and all lenses use reflection, including reflective masks. . Therefore, the illumination beam is not perpendicular to the mask substrate, and the incident angle is generally 6 degrees, whereby the local shape, tilt, and material properties of the mask greatly affect the image quality.
  • the system is more inclined to design a circular field of view (refer to US Patent No. 6225027B1 EUVL system in 2001). The oblique principal ray angle plus the annular field of view results in non-telecentricity of the imaging system.
  • non-telecentricity means that the vertical deviation of the mask from the optimal object plane can cause the engraving error of the imaging system. Will exceed User-allowed range (because 193nm lithography equipment typically uses a double telecentric design without this type of problem).
  • the control accuracy of the mask height should be kept at 10 to 20 nm (corresponding to the silicon wafer height control precision of the conventional 193 nm lithography equipment), so to solve the problem that the EUV lithography system is not telecentric.
  • the particle mask Since the particle mask is inevitably present in the mask table itself or on the back surface of the mask, the partial shape of the mask after being uploaded to the mask table changes. Therefore, it is necessary to measure the position of each point on the mask surface and its corresponding topography.
  • the overlay error control Through the "acquisition of the correction amount - calculation of the adjustment amount - the implementation of the adjustable component, the overlay error control.
  • the timing of the measurement is selected after the mask is loaded into the mask table, before the wafer exposure is officially performed.
  • the measured data is transmitted to the control module to adjust the height of the mask maglev.
  • the adjustment accuracy of the mask height mainly depends on the measurement accuracy of the magnification and the accuracy of the laser interferometer. This requires real-time coordination of multiple coupling systems. And have accurate and fast feedback processing time.
  • EUV lithography system is particularly sensitive to the environment, when you need to use the calibration mask to calibrate the system, mask replacement and surface measurement take time, affecting the yield. Summary of the invention
  • An object of the present invention is to provide an EUV lithography apparatus and an exposure method thereof for improving the yield of an EUV lithography apparatus.
  • Another object of the present invention is to provide an EUV lithography apparatus and an exposure method thereof for solving the problem that a mask is subjected to thermal deformation for a long period of time.
  • a first aspect of the present invention provides a lithographic apparatus and an exposure method thereof, the apparatus comprising an EUV light source, an illumination system, a projection system, and a workpiece stage, the apparatus further comprising: a mask stage, Moving over the projection system, the mask table has a first stage and a second stage on a side of the first stage; and a first measurement system disposed on one side of the projection system, wherein The first stage of the mask stage is configured to carry a first reflective mask and to cause the EUV to emit EUV when the mask stage is moved to a first position relative to the projection system The light is irradiated onto the workpiece stage through the illumination system, the first reflective mask, and the projection system; wherein the second stage of the mask stage is configured to carry a second reflective mask, and the first The position of the measurement system is set such that when the mask table is in the first position, the first measurement system is capable of measuring the shape and position of the second reflective mask.
  • the first measurement system includes first and second sensors for measuring a positional relationship of the reflective mask with respect to a mask table, and a plurality of shapes for measuring the reflective mask.
  • a third sensor is
  • the plurality of third sensors are located between the first sensor and the second sensor. Further, the first and second sensors and the plurality of third sensors are arranged in a linear array, and the length of the linear array is greater than or equal to the length of the reflective mask.
  • the position of the first measuring system is set such that when the mask table is in the first position, the first measuring system is opposite to the second reflective mask.
  • stage markings are disposed on the first and second stages.
  • the exposure method according to the first aspect of the present invention is performed by the above lithographic apparatus, and while the silicon wafer on the workpiece stage is exposed using the first reflective mask carried by the first stage, the first measurement
  • the quantity system measures at least one of a face shape and a position of the second reflective mask carried by the second stage.
  • a second aspect of the invention proposes a lithographic apparatus and an exposure method thereof, the apparatus being added to the other side of the first stage on the mask stage based on the apparatus according to the first aspect of the invention a third stage, and the device further includes a second measurement system disposed on the other side of the projection system, wherein the third stage is configured to carry a third reflective mask, and The position of the second measurement system is set such that when the mask table is in the first position, the second measurement system is capable of measuring the shape and position of the third reflective mask.
  • the position of the second measuring system is set such that when the mask table is in the first position, the second measuring system is opposite to the third reflective mask.
  • the exposure method according to the second aspect of the present invention is performed by the above lithography apparatus, and the first measurement system is simultaneously exposed to the silicon wafer on the workpiece stage using the first reflective mask carried by the first stage Measuring at least one of a face shape and a position of a second reflective mask carried by the second stage and/or a face shape of the third reflective mask carried by the second measuring system to the third stage At least one of the locations is measured.
  • a third aspect of the invention proposes a further lithographic apparatus and an exposure method thereof, the apparatus adding a second measurement system on the other side of the projection system based on the apparatus according to the first aspect of the invention
  • EUV light emitted by the EUV light source is irradiated onto the workpiece stage through the illumination system, the second reflective mask carried by the second stage, and a projection system; the position of the second measurement system is set to be The second measurement system is capable of measuring the face shape and position of the first reflective mask carried by the first stage when the die stage is in the second position.
  • the exposure method according to the third aspect of the present invention is carried out by using the above lithographic apparatus, and while exposing the silicon wafer on the workpiece stage using one of the first and second stages of the reflective mask, A respective one of the first and second measurement systems measures at least one of the face shape and position of the reflective mask carried by the other of the first and second stages.
  • the beneficial effects of the present invention are mainly embodied in: Since the mask table carries a plurality of reflective masks, the reflective mask in the exposure position is exposed while another reflective mask in the measurement position The mold can simultaneously perform surface and position measurement. When multi-batch wafer exposure, it can save surface and position measurement time, and use the measured surface and position data of the reflective mask to perform feedforward control of mask height. In the case of ensuring the precision of the engraving, the exposure feedback adjustment time is reduced, so that the yield can be improved.
  • the mask table can also carry a plurality of identical reflective masks, and the masks are alternately used to switch the wafers by switching the masks.
  • the masks are alternately used to switch the wafers by switching the masks.
  • a multi-load mask stage can be conveniently accommodated in an EUV lithography apparatus. Since multiple reflective masks can be exchanged at one time, the reflective mask exchange time can be saved for multiple batches of continuous exposure; since a single mask table is used to carry multiple reflective masks, a set of mask tables can be shared. Positioning the measurement system, the multi-load mask stage eliminates the need for repetitive measurement and saves space and cost.
  • FIG. 1 is a schematic structural view of an EUV device in the prior art
  • FIG. 2 is a schematic structural view of an EUV device according to Embodiment 1 of the present invention.
  • FIG. 3 is a schematic structural view of a reflective mask and a mask stage according to Embodiment 1 of the present invention
  • FIG. 4 is a schematic cross-sectional view of the combined surface sensor according to Embodiment 1 of the present invention
  • FIG. 5 is a schematic structural view of an EUV device according to Embodiment 2 of the present invention.
  • FIG. 6 is a schematic structural diagram of an EUV device according to Embodiment 3 of the present invention.
  • the EUV lithography apparatus of the present invention and its exposure method will be described in more detail below with reference to the accompanying drawings, in which a preferred embodiment of the present invention is shown, and it is understood that those skilled in the art can modify the invention described herein while still implementing the present invention.
  • an EUV lithography apparatus comprising: an EUV light source 100, an illumination system 210, a projection system 220, a workpiece stage 700, a mask stage 300, and a measurement system.
  • the EUV lithography apparatus has an exposure position and a measurement position
  • the projection system 220 and the workpiece stage 700 are located at an exposure position
  • the measurement system 510 is located at a measurement position
  • the exposure position and the measurement bit respectively mean lithography A station of the device, that is, a spatial position to be occupied by the specified process.
  • the components located at the exposure position are used to cooperate to complete the exposure process for the silicon wafer
  • the components located at the measurement position are used for Work together to complete the measurement process for the mask.
  • the exposure position and the measurement position are only schematically shown in the drawings of the specification, and the division of the stations may be different according to different lithographic apparatuses, and thus should not be construed as limiting the present invention.
  • the exposure bit and the measurement bit shown in the figure are adjacent, both of them may be interdigitated in the spatial position.
  • the stacked, in other words, the components of the exposure position may overlap with the components of the measurement position in a spatial position as long as the implementation of the corresponding process is not affected.
  • the mask table 300 carries a plurality of reflective masks, collectively indicated by reference numeral 400. Two reflective masks, 400a and 400b, are shown in FIG.
  • the measurement system 510 performs face and position measurements on the reflective mask 400b at the measurement level.
  • the EUV lithography apparatus further includes a base frame 600 and also has a switching bit.
  • the interchangeable bits are only schematically shown in the drawings, and are not intended to limit the present invention.
  • the EUV light source 100, the illumination system 210, the projection system 220, the workpiece stage 700, the mask stage 300, and the measurement system 510 are all disposed within the base frame 600 at which the reflective mask 400 can be replaced.
  • the measurement system 510 includes at least one sensor (RLS, Reticle Location-Leveling Sensor) and is fixed on the base frame 600 by a measurement frame 520 and located at the measurement position.
  • the measurement system 510 includes a first position sensor 511, a second position sensor 512, and a plurality of face sensors 513, such as eight face sensors 513, the face sensor 513 is located at the first position sensor. Between 511 and the second position sensor 512.
  • the measuring system 510 is in a measuring position, and has a mask position measuring and a mask surface measuring function.
  • the sensors in the measuring system 510 are arranged in a straight line, and the position measuring system composed of the first position sensor 511 and the second position sensor 512 is located in a straight line.
  • the mask stage marks and mask marks can be captured on both sides, and the face sensor 513 is located in the center of the measurement system and can capture the mask face of the entire reflective mask 400b being measured.
  • only one measurement system 510 is included, and is located at the measurement position.
  • the mask table 300 carries two reflective masks 400a, 400b, and the reflective masks 400a, 400b are respectively carried by the mask stage.
  • the 410a, 410b bearers are coupled to the mask table 300, one reflective mask 400a is in the exposure position, and the other reflective mask 400b is in the measurement position and opposite the measurement system 510.
  • an EUV lithography exposure method is also proposed, using the EUV described above.
  • a lithographic apparatus the method comprising the steps of:
  • S400 exposing the silicon wafer 800 while using the measuring system 510 to perform surface shape and position measurement on the reflective mask 400b;
  • the exchange mask can be exchanged by the mask transfer system of the EUV lithography apparatus; the two reflective masks 400a, 400b can be simultaneously loaded and unloaded; that is, the first reflective mask 400a first Entering the measurement location; a measurement system (RLS) 510 located at the measurement location and below the first reflective mask 400a begins to measure the horizontal position and profile height of the first reflective mask 400a.
  • RLS measurement system
  • the reflective mask 400 is provided with mask marks R1, R2, R3 and
  • the mask stage 410 is provided with mask stage marks RM1, RM2, RM3 and RM4; the measurement system marks the mask marks R1, R2, R3 and R4 and the mask stage marks RM1, RM2 ,
  • RM3 and RM4 identify, establish the horizontal positional relationship of the reflective mask, specifically, the mask table
  • the 300 is scanned back and forth in a horizontal direction, and the first position sensor 511 and the second position sensor 512 in the measurement system 510 can identify the two marks and establish a horizontal positional relationship.
  • the surface sensor 513 in 510 can measure the mask height of the corresponding position of the surface of the reflective mask 400, that is, the topography relationship of the reflective mask 400 is obtained, and the number of scans is determined by the surface measurement accuracy.
  • the first position sensor 511 and the second position sensor 512 are used to determine the horizontal position of the reflective mask 400 and the mask stage 410.
  • the reflective mask 400a is loaded into the exposure position after the scanning of the first reflective mask 400a is completed by the above method, as shown in FIG.
  • the reflective mask 400a is then aligned, which measures the mask stage marks RM1, RM2, RM3, and RM4 on the mask stage 410a by an image sensor (not shown) on the workpiece stage 700.
  • Calculate the positional parameters of the spatial image of the reflective mask 400a establish a spatial positional relationship between the reflective mask 400a and the exposure field of the silicon wafer 800, and adjust various factors such as the magnification adjustment amount (ie, obtain a height change of the reflective mask 400a). The amount of change in the engraving error caused).
  • the reflective mask 400a at the exposure position at this time establishes the positional relationship with the silicon wafer 800, and starts to continuously expose the exposure field of the silicon wafer 800, which is measured by the measurement position before the call.
  • the surface data of the reflective mask 400a combines the scanning position and the optimal adjustment strategy to feed forward the attitude of the mask table 300, thereby calibrating the overlay error of the exposure field in real time.
  • another reflective mask 400b is in the measurement position, and the measurement system 510 can perform alignment and global Coarse Grid Measure on the other reflective mask 400b.
  • the coarse measurement is used to obtain the mark position information and the preliminary face shape information of the other reflective mask 400b, and transmit the measured face shape data of the other reflective mask 400b to the server end as the other The reflective mask 400b feeds back the basis of aberration calibration during scanning exposure.
  • the silicon wafer 800 After the scanning exposure of a silicon wafer 800 is completed, the silicon wafer 800 enters an exchange state, at which time the reflective mask 400a in the exposure position is in an idle state, and the other reflective mask 400b in the measurement position performs a local grid point at this time. a local fine Grid Measure, and passing the measured face data of the other reflective mask 400b to the server as the other reflective mask
  • the time for the face and position measurement of the 400b is shared with the exposure of the silicon wafer 800 and the replacement of the silicon wafer 800.
  • the mask needs to be replaced to continue exposing the next batch of wafers 800, then the other reflective mask 400b enters the exposure position to initiate subsequent exposure.
  • the mask stage 300 enters the exchange location and is exchanged with the used reflective masks 400a, 400b using the third and fourth reflective masks. This cycle is repeated until all of the silicon wafers 800 have been exposed.
  • the other reflective mask 400b and the reflective mask 400a may have the same or different mask patterns.
  • the mask heat dissipation is more difficult.
  • the mask absorption layer is deformed by heat, which affects the image quality, and needs to wait for the temperature reduction treatment to affect the yield. .
  • Embodiment 2 Embodiment 2
  • an EUV lithography apparatus is proposed.
  • two measurement systems 510a and 510b are disposed, which are respectively located at the first measurement position and the second measurement position.
  • the first measurement bit and the second measurement bit are respectively located at two sides of the exposure position, and the mask table 300 carries three reflective masks, 400a, 400b, 400c, respectively, and each of the reflective masks 400a, 400b, 400c are connected to the mask table 300 by corresponding mask stages 410a, 410b, 410c, one reflective mask 400a is in the exposure position, and the other two reflective masks 400b, 400c are respectively located in the first measurement
  • the bit and the second measurement bit are opposite the two measurement systems 510a, 510b of the first measurement bit and the second measurement bit.
  • the EUV lithography apparatus and the EUV lithography exposure method are the same as those in the first embodiment. For details, refer to the first embodiment, and details are not described herein again.
  • the reflective mask can be located at the first measurement position or at the second measurement position.
  • the die 400b (or 400c) enters the exposure position and begins subsequent exposure. Waiting for the second batch of wafers 800 to be exposed, and continuing to expose the remaining one of the measurement sites of the reflective mask 400c (or 400b) Enter the exposure position and start the subsequent exposure. Therefore, the EUV lithography apparatus proposed in this embodiment can realize the exchange of three reflective masks 400.
  • an EUV lithography apparatus which includes two measurement systems 510a and 510b and two measurement bits, and the two measurement bits are a first measurement bit and a second measurement bit, respectively. , located on both sides of the exposure position.
  • the mask table 300 only carries two reflective masks 400a, 400b, and the mask table 300 can be horizontally moved in the direction of the arrow in FIG. 6, so that the two reflective masks 400a can be made. , 400b switches between the first measurement bit, the exposure bit, and the second measurement bit.
  • the rest of the device and the exposure method are the same as those in the first embodiment, and are not described here. For details, please refer to the first embodiment.
  • the mask stage carries a plurality of reflective masks
  • the reflective mask in the exposure position is exposed while being in the measurement position.
  • a reflective mask allows simultaneous face and position measurements. When multiple batches of wafers are exposed, mask surface and position measurement time can be saved, using the measured face and position data of the reflective mask.
  • the feedforward control of the mask height reduces the exposure feedback adjustment time while ensuring the engraving precision, so the yield can be improved; the reflective mask of the multi-mask stage can be quickly switched by switching the mask
  • the wafer exposure is continued on another identical reflective mask.
  • the multi-stage mask can continue to expose the wafer on another identical reflective mask relatively quickly by switching the reflective mask, by continuously switching the reflective mask.
  • the EUV lithography apparatus utilizes an increase in efficiency, thereby reducing the total cost of ownership for the EUV lithography apparatus; since under certain process conditions, it is necessary to use double exposure or multiple exposure methods for the exposed silicon wafer, the multi-load mask stage is also This need can be conveniently met in an EUV lithography apparatus. Because you can pay at one time Multiple reflective masks can save reflective mask exchange time for multiple batches of continuous exposure; a set of mask table positioning measurement systems can be shared because multiple reflective masks are used to carry multiple reflective masks Therefore, the multi-load mask table eliminates the need for repeated measurement processes and saves space and cost.

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

An EUV photoetching device and an exposure method therefor. A mask table (300) of the device bears a plurality of reflection type masks (400a, 400b), wherein while one reflection type mask (400a) at an exposure position conducts exposure, the other reflection type mask (400b) at a measurement position can conduct facial forming and position measurement simultaneously. When a plurality of batches of silicon chips are exposed, the time for facial forming and position measurement can be saved, thereby improving the productivity. The mask table (300) can also bear a plurality of identical reflection type masks, and silicon chips are exposed by using a manner of switching masks alternately, so that by means of continuously switching the reflection type masks, the occurrence of the situation where the image quality is impaired, which is caused by the thermal deformation of the reflection type masks after being exposed for a period of time, due to the fact that heat dissipation in a high vacuum environment is difficult can be avoided.

Description

技术领域 Technical field
本发明涉及光刻领域, 尤其涉及一种 EUV光刻装置及其曝光方法。 背景技术  The present invention relates to the field of lithography, and more particularly to an EUV lithography apparatus and an exposure method thereof. Background technique
投影曝光装置用于将掩模版上的电路图形经过投影光学系统做投影曝光 的装置, 能够将电路图形以一定放大或缩小的倍率投影于制造集成电路的硅 片上。 集成电路的发展遵循 "Moore定律", 随着 IC制造技术的飞速发展, IC 集成度逐渐提高, 投影曝光装置所用光波长也逐步下降, 当前使用的主流光 刻技术釆用 193nm ( Deep UV; DUV ) 波长的激光。 在浸没技术, 双重曝光 和多重曝光等围绕工艺创新技术的驱动下,逐渐逼近到 DUV波长所能达到的 光刻极限, 预计在纳米节点, 使用 193nm曝光装置的用户拥有成本将大大提 高,而釆用波长 13.5nm的极紫外线( Extreme UV, EUV )光曝光装置( EUVL ) 将体现出更大的竟争优势, 并将无可争议地成为下一代光刻技术的首选。 所 述 EUV曝光装置的典型配置如图 1所示, 包括: 基础框架 10、 掩模台 20、 测量框架 30、 面型传感器 31、 EUV光源 50、 照明系统 42、 投影系统 41以及 石圭片台 60。  The projection exposure apparatus is used for a projection exposure of a circuit pattern on a reticle through a projection optical system, and the circuit pattern can be projected onto a silicon wafer of an integrated circuit at a magnification of a certain magnification or reduction. The development of integrated circuits follows the "Moore's Law". With the rapid development of IC manufacturing technology, IC integration is gradually increasing, and the wavelength of light used in projection exposure devices is gradually decreasing. The current mainstream lithography technology uses 193nm (Deep UV; DUV). ) The wavelength of the laser. Driven by process innovations such as immersion technology, double exposure and multiple exposures, the lithography limit that can be achieved by DUV wavelengths is gradually approaching. It is expected that the user cost of using 193nm exposure devices will be greatly improved at the nanonodes. The extreme ultraviolet (EUV) light exposure device (EUVL) with a wavelength of 13.5 nm will show a greater competitive advantage and will undoubtedly become the first choice for next-generation lithography. A typical configuration of the EUV exposure apparatus is as shown in FIG. 1, and includes: a base frame 10, a mask stage 20, a measurement frame 30, a surface sensor 31, an EUV light source 50, an illumination system 42, a projection system 41, and a stone substrate. 60.
由于现有物质对紫外波段(13.5nm ) 光能有很强的吸收性, 所以 EUVL 照明和投影系统除需很高的真空度外, 所有镜片都釆用了反射方式, 其中包 括反射式掩模。 因此, 照明光束不与掩模基底垂直, 一般入射角为 6度, 由 此掩模局部面型, 倾斜以及材料性质会对成像质量产生很大影响。 另外, 根 据反射光学系统的性质, 为兼顾大的曝光视场和成像质量, 系统更倾向于设 计成环形视场 (参照 2001年美国专利 US6225027B1 EUVL system )。 倾斜的 主光线角加上环形视场导致成像系统的非远心性, 所谓非远心性意味着, 掩 模与最佳物面的垂向偏差会导致成像系统的套刻误差, 这一套刻误差将超过 用户允许的范围(因 193nm光刻设备通常釆用双远心设计而不存在这类问题)。 为控制这一误差, 掩模高度的控制精度需保持在 10到 20 nm左右 (与常规的 193nm光刻设备硅片高度控制精度相当 ), 所以为解决 EUV光刻系统物方非 远心导致的套刻误差问题, 需要增加掩模面型传感器 31 , 所述面型传感器 31 测量掩模面上吸收层在整个掩模面上的相对高度分布。 Since the existing materials are highly absorptive to the ultraviolet (13.5 nm) light energy, the EUVL illumination and projection system requires a high degree of vacuum, and all lenses use reflection, including reflective masks. . Therefore, the illumination beam is not perpendicular to the mask substrate, and the incident angle is generally 6 degrees, whereby the local shape, tilt, and material properties of the mask greatly affect the image quality. In addition, according to the nature of the reflective optical system, in order to balance the large field of view and image quality, the system is more inclined to design a circular field of view (refer to US Patent No. 6225027B1 EUVL system in 2001). The oblique principal ray angle plus the annular field of view results in non-telecentricity of the imaging system. The so-called non-telecentricity means that the vertical deviation of the mask from the optimal object plane can cause the engraving error of the imaging system. Will exceed User-allowed range (because 193nm lithography equipment typically uses a double telecentric design without this type of problem). In order to control this error, the control accuracy of the mask height should be kept at 10 to 20 nm (corresponding to the silicon wafer height control precision of the conventional 193 nm lithography equipment), so to solve the problem that the EUV lithography system is not telecentric. In the case of the registration error, it is necessary to increase the mask surface sensor 31 which measures the relative height distribution of the absorption layer on the mask surface over the entire mask surface.
由于掩模台本身或掩模背面不可避免地存在颗粒污染, 导致上载到掩模 台后的掩模局部面型会发生变化, 所以需要测量掩模面各点位置及其对应的 形貌, 在系统运行过程中, 通过"获取校正量——计算调整量——执行可调元 件,,进行套刻误差控制。 测量的时机选择在掩模版加载到掩模台后, 在正式进 行硅片曝光前进行。 测得的数据传输到由控制模块处理, 调节掩模磁浮台调 整高度。 掩模高度的调节精度主要依赖于倍率的测量精度和激光干涉仪的精 度。 这需要实时协调多个耦合系统, 并要有精确而快速的反馈处理时间。  Since the particle mask is inevitably present in the mask table itself or on the back surface of the mask, the partial shape of the mask after being uploaded to the mask table changes. Therefore, it is necessary to measure the position of each point on the mask surface and its corresponding topography. During the operation of the system, through the "acquisition of the correction amount - calculation of the adjustment amount - the implementation of the adjustable component, the overlay error control. The timing of the measurement is selected after the mask is loaded into the mask table, before the wafer exposure is officially performed. The measured data is transmitted to the control module to adjust the height of the mask maglev. The adjustment accuracy of the mask height mainly depends on the measurement accuracy of the magnification and the accuracy of the laser interferometer. This requires real-time coordination of multiple coupling systems. And have accurate and fast feedback processing time.
当今曝光装置为提高产率均需要进行多批次曝光连续工作, 对加载后的 掩模事先进行全面的局部面型测量不可避免地影响产率, 同时如何解决 EUV 光刻环境下, 掩模面型测校, 高真空环境下的掩模热效应变形, 双重或多重 曝光等问题, 这些问题都会不同程度地对光刻产率造成影响。  In today's exposure devices, continuous batch operation is required to improve the yield. The comprehensive local surface measurement of the loaded mask in advance inevitably affects the yield, and how to solve the EUV lithography environment, the mask surface Type calibration, mask thermal effect deformation in high vacuum environments, double or multiple exposure issues, these issues will affect the lithography yield to varying degrees.
因此, 现有技术中均存在以下几点技术问题:  Therefore, the following technical problems exist in the prior art:
1、 EUV光刻多批次连续曝光时, 在每批次第一片硅片曝光前, 都需要 在交换位对掩模进行交换, 在测量位对掩模面型进行测量, 而后在曝光位进 行曝光, 特别是在执行双曝光或多重曝光工艺时, 每一片掩模的切换和后续 操作测量都需串行进行, 产率因此受到影响。  1. For EUV lithography multi-batch continuous exposure, before each batch of the first wafer is exposed, it is necessary to exchange the mask at the exchange position, measure the mask surface at the measurement position, and then measure the exposure surface. Exposure is performed, especially when performing a double exposure or multiple exposure process, each mask switching and subsequent operation measurements are performed serially, and the yield is therefore affected.
2、 在 EUV 高真空环境中, 掩模散热更为困难, 当一片掩模连续曝光后 掩模吸收层因受热形变, 影响成像质量, 需等待进行降温处理而影响产率。  2. In the EUV high vacuum environment, the mask heat dissipation is more difficult. When the mask is continuously exposed, the mask absorption layer is deformed by heat, which affects the image quality. It is necessary to wait for the temperature reduction treatment to affect the yield.
3、 EUV光刻系统对环境特别敏感,需要使用测校掩模对系统进行校准时, 掩模更换和面型测量耗费时间, 影响产率。 发明内容 3, EUV lithography system is particularly sensitive to the environment, when you need to use the calibration mask to calibrate the system, mask replacement and surface measurement take time, affecting the yield. Summary of the invention
本发明的一个目的在于提供一种 EUV 光刻装置及其曝光方法, 以提高 EUV光刻装置的产率。  SUMMARY OF THE INVENTION An object of the present invention is to provide an EUV lithography apparatus and an exposure method thereof for improving the yield of an EUV lithography apparatus.
本发明的另一个目的在于提供一种 EUV光刻装置及其曝光方法, 以解决 一块掩模长时间工作受热变形的问题。  Another object of the present invention is to provide an EUV lithography apparatus and an exposure method thereof for solving the problem that a mask is subjected to thermal deformation for a long period of time.
为了实现上述目的, 本发明的第一方面提出了一种光刻装置及其曝光方 法, 所述装置包括 EUV光源、 照明系统、 投影系统和工件台, 所述装置还包 括: 掩模台, 可在投影系统上方运动, 所述掩模台具有一第一载台和位于第 一载台一侧的一第二载台; 以及一第一测量系统, 设置于投影系统的一侧, 其中, 所述掩模台的第一载台用于承载一第一反射式掩模, 并当所述掩模台 移动至相对于所述投影系统的一第一位置时,使得所述 EUV光源发出的 EUV 光线经过所述照明系统、 第一反射式掩模和投影系统照射至工件台上; 其中, 所述掩模台的第二载台用于承载一第二反射式掩模, 且所述第一测量系统的 位置被设置为当所述掩模台位于所述第一位置时, 该第一测量系统能够对所 述第二反射式掩模的面型和位置进行测量。  In order to achieve the above object, a first aspect of the present invention provides a lithographic apparatus and an exposure method thereof, the apparatus comprising an EUV light source, an illumination system, a projection system, and a workpiece stage, the apparatus further comprising: a mask stage, Moving over the projection system, the mask table has a first stage and a second stage on a side of the first stage; and a first measurement system disposed on one side of the projection system, wherein The first stage of the mask stage is configured to carry a first reflective mask and to cause the EUV to emit EUV when the mask stage is moved to a first position relative to the projection system The light is irradiated onto the workpiece stage through the illumination system, the first reflective mask, and the projection system; wherein the second stage of the mask stage is configured to carry a second reflective mask, and the first The position of the measurement system is set such that when the mask table is in the first position, the first measurement system is capable of measuring the shape and position of the second reflective mask.
进一步的, 所述第一测量系统包括用于测量所述反射式掩模相对于掩模 台的位置关系的第一和第二传感器, 以及用于测量所述反射式掩模的面型的 多个第三传感器。  Further, the first measurement system includes first and second sensors for measuring a positional relationship of the reflective mask with respect to a mask table, and a plurality of shapes for measuring the reflective mask. A third sensor.
进一步的, 所述多个第三传感器位于第一传感器和第二传感器之间。 进一步的, 所述第一和第二传感器以及所述多个第三传感器排成一线性 阵列, 该线性阵列的长度大于等于所述反射式掩模的长度。  Further, the plurality of third sensors are located between the first sensor and the second sensor. Further, the first and second sensors and the plurality of third sensors are arranged in a linear array, and the length of the linear array is greater than or equal to the length of the reflective mask.
进一步的, 所述第一测量系统的位置被设置为当所述掩模台位于所述第 一位置时, 该第一测量系统与所述第二反射式掩模相对。  Further, the position of the first measuring system is set such that when the mask table is in the first position, the first measuring system is opposite to the second reflective mask.
进一步的, 所述第一和第二载台上均设有多个载台标记。  Further, a plurality of stage markings are disposed on the first and second stages.
根据本发明第一方面的曝光方法釆用上述光刻装置进行, 且在使用第一 载台承载的第一反射式掩模对工件台上的硅片进行曝光的同时, 所述第一测 量系统对第二载台承载的第二反射式掩模的面型和位置中的至少一个进行测 量。 The exposure method according to the first aspect of the present invention is performed by the above lithographic apparatus, and while the silicon wafer on the workpiece stage is exposed using the first reflective mask carried by the first stage, the first measurement The quantity system measures at least one of a face shape and a position of the second reflective mask carried by the second stage.
本发明的第二方面提出了另一种光刻装置及其曝光方法, 所述装置在根 据本发明第一方面的装置基础上, 在掩模台上增加了位于第一载台的另一侧 的一第三载台, 并且所述装置还包括一第二测量系统, 设置于所述投影系统 的另一侧, 其中, 所述第三载台用于承载一第三反射式掩模, 且所述第二测 量系统的位置被设置为当所述掩模台位于所述第一位置时, 该第二测量系统 能够对所述第三反射式掩模的面型和位置进行测量。  A second aspect of the invention proposes a lithographic apparatus and an exposure method thereof, the apparatus being added to the other side of the first stage on the mask stage based on the apparatus according to the first aspect of the invention a third stage, and the device further includes a second measurement system disposed on the other side of the projection system, wherein the third stage is configured to carry a third reflective mask, and The position of the second measurement system is set such that when the mask table is in the first position, the second measurement system is capable of measuring the shape and position of the third reflective mask.
进一步的, 所述第二测量系统的位置被设置为当所述掩模台位于所述第 一位置时, 该第二测量系统与所述第三反射式掩模相对。  Further, the position of the second measuring system is set such that when the mask table is in the first position, the second measuring system is opposite to the third reflective mask.
根据本发明第二方面的曝光方法釆用上述光刻装置进行, 且在使用第一 载台承载的第一反射式掩模对工件台上的硅片进行曝光的同时, 所述第一测 量系统对第二载台承载的第二反射式掩模的面型和位置中的至少一个进行测 量和 /或所述第二测量系统对第三载台承载的第三反射式掩模的面型和位置中 的至少一个进行测量。  The exposure method according to the second aspect of the present invention is performed by the above lithography apparatus, and the first measurement system is simultaneously exposed to the silicon wafer on the workpiece stage using the first reflective mask carried by the first stage Measuring at least one of a face shape and a position of a second reflective mask carried by the second stage and/or a face shape of the third reflective mask carried by the second measuring system to the third stage At least one of the locations is measured.
本发明的第三方面提出了又一种光刻装置及其曝光方法, 所述装置在根 据本发明第一方面的装置基础上增加了一第二测量系统, 位于所述投影系统 的另一侧; 当所述掩模台移动至相对于投影系统的一第二位置时, 使得所述 A third aspect of the invention proposes a further lithographic apparatus and an exposure method thereof, the apparatus adding a second measurement system on the other side of the projection system based on the apparatus according to the first aspect of the invention When the mask table is moved to a second position relative to the projection system, causing the
EUV光源发出的 EUV光线经过所述照明系统、所述第二载台承载的第二反射 式掩模和投影系统照射至工件台上; 所述第二测量系统的位置被设置为当所 述掩模台位于所述第二位置时, 该第二测量系统能够对所述第一载台承载的 第一反射式掩模的面型和位置进行测量。 EUV light emitted by the EUV light source is irradiated onto the workpiece stage through the illumination system, the second reflective mask carried by the second stage, and a projection system; the position of the second measurement system is set to be The second measurement system is capable of measuring the face shape and position of the first reflective mask carried by the first stage when the die stage is in the second position.
根据本发明第三方面的曝光方法釆用上述光刻装置进行, 且在使用第一 和第二载台其中一个承载的反射式掩模对工件台上的硅片进行曝光的同时, 所述第一和第二测量系统中的相应一个对第一和第二载台其中另一个承载的 反射式掩模的面型和位置中的至少一个进行测量。 与现有技术相比, 本发明的有益效果主要体现在: 由于掩模台承载多个 反射式掩模, 处于曝光位的反射式掩模在曝光的同时, 处于测量位的另一块 反射式掩模可同时进行面型和位置测量, 多批次硅片曝光时, 能够节约面型 和位置测量时间, 利用已测得的反射式掩模的面型和位置数据进行掩模高度 的前馈控制, 在保证套刻精度的情况下, 减少曝光反馈调整时间, 所以可以 提高产率。 The exposure method according to the third aspect of the present invention is carried out by using the above lithographic apparatus, and while exposing the silicon wafer on the workpiece stage using one of the first and second stages of the reflective mask, A respective one of the first and second measurement systems measures at least one of the face shape and position of the reflective mask carried by the other of the first and second stages. Compared with the prior art, the beneficial effects of the present invention are mainly embodied in: Since the mask table carries a plurality of reflective masks, the reflective mask in the exposure position is exposed while another reflective mask in the measurement position The mold can simultaneously perform surface and position measurement. When multi-batch wafer exposure, it can save surface and position measurement time, and use the measured surface and position data of the reflective mask to perform feedforward control of mask height. In the case of ensuring the precision of the engraving, the exposure feedback adjustment time is reduced, so that the yield can be improved.
此外, 掩模台还可承载多块相同的反射式掩模, 通过切换掩模的方式交 替使用这些掩模来进行硅片曝光, 通过不断切换反射式掩模可避免在高真空 环境中散热困难导致反射式掩模在一段时间曝光后的受热形变导致像质受损 的情况发生。  In addition, the mask table can also carry a plurality of identical reflective masks, and the masks are alternately used to switch the wafers by switching the masks. By continuously switching the reflective masks, heat dissipation in a high vacuum environment can be avoided. This causes the thermal deformation of the reflective mask after a period of exposure to cause image quality damage.
进一步的, 由于在某些工艺条件下, 需要对曝光硅片釆用双重曝光或多 重曝光方式, 多载的掩模台也可以方便地在 EUV光刻装置中满足这种需求。 由于一次可以交换多个反射式掩模, 对多批次连续曝光来说可节省反射式掩 模交换时间; 由于釆用单个掩模台承载多个反射式掩模, 可共用一套掩模台 定位测量系统, 因此多载掩模台可省去了重复测量过程, 同时也可以节省空 间和成本。 附图说明  Further, since under certain process conditions, the exposure wafer is required to be double-exposed or multi-exposure, a multi-load mask stage can be conveniently accommodated in an EUV lithography apparatus. Since multiple reflective masks can be exchanged at one time, the reflective mask exchange time can be saved for multiple batches of continuous exposure; since a single mask table is used to carry multiple reflective masks, a set of mask tables can be shared. Positioning the measurement system, the multi-load mask stage eliminates the need for repetitive measurement and saves space and cost. DRAWINGS
图 1为现有技术中 EUV装置的结构示意图;  1 is a schematic structural view of an EUV device in the prior art;
图 2为本发明实施例一中 EUV装置的结构示意图;  2 is a schematic structural view of an EUV device according to Embodiment 1 of the present invention;
图 3为本发明实施例一中反射式掩模和掩模载台的结构示意图; 图 4为本发明实施例一中组合面型传感器的剖面示意图;  3 is a schematic structural view of a reflective mask and a mask stage according to Embodiment 1 of the present invention; FIG. 4 is a schematic cross-sectional view of the combined surface sensor according to Embodiment 1 of the present invention;
图 5为本发明实施例二中 EUV装置的结构示意图;  5 is a schematic structural view of an EUV device according to Embodiment 2 of the present invention;
图 6为本发明实施例三中 EUV装置的结构示意图。 具体实施方式 下面将结合示意图对本发明的 EUV光刻装置及其曝光方法进行更详细的 描述, 其中表示了本发明的优选实施例, 应该理解本领域技术人员可以修改 在此描述的本发明, 而仍然实现本发明的有利效果。 因此, 下列描述应当被 理解为对于本领域技术人员的广泛知道, 而并不作为对本发明的限制。 FIG. 6 is a schematic structural diagram of an EUV device according to Embodiment 3 of the present invention. detailed description The EUV lithography apparatus of the present invention and its exposure method will be described in more detail below with reference to the accompanying drawings, in which a preferred embodiment of the present invention is shown, and it is understood that those skilled in the art can modify the invention described herein while still implementing the present invention. Advantageous effects of the invention. Therefore, the following description is to be understood as a broad understanding of the invention, and is not intended to limit the invention.
为了清楚, 不描述实际实施例的全部特征。 在下列描述中, 不详细描述 公知的功能和结构, 因为它们会使本发明由于不必要的细节而混乱。 应当认 为在任何实际实施例的开发中, 必须做出大量实施细节以实现开发者的特定 目标, 例如按照有关系统或有关商业的限制, 由一个实施例改变为另一个实 施例。 另外, 应当认为这种开发工作可能是复杂和耗费时间的, 但是对于本 领域技术人员来说仅仅是常规工作。  In the interest of clarity, not all features of the actual embodiments are described. In the following description, well-known functions and structures are not described in detail as they may obscure the present invention in unnecessary detail. It should be understood that in the development of any actual embodiment, a large number of implementation details must be made to achieve a particular goal of the developer, such as changing from one embodiment to another in accordance with the limitations of the system or related business. In addition, such development work should be considered complex and time consuming, but is only routine work for those skilled in the art.
在下列段落中参照附图以举例方式更具体地描述本发明。 根据下面说明 和权利要求书, 本发明的优点和特征将更清楚。 需说明的是, 附图均釆用非 常简化的形式且均使用非精准的比例, 仅用以方便、 明晰地辅助说明本发明 实施例的目的。 实施例一  The invention is more specifically described in the following paragraphs by way of example with reference to the accompanying drawings. Advantages and features of the present invention will be apparent from the description and appended claims. It is to be understood that the appended drawings are intended to be illustrative of the embodiments Embodiment 1
请参考图 2, 在本实施例中, 提出了一种 EUV光刻装置, 包括: EUV光 源 100、 照明系统 210、 投影系统 220、 工件台 700、 掩模台 300和测量系统 Referring to FIG. 2, in the present embodiment, an EUV lithography apparatus is proposed, comprising: an EUV light source 100, an illumination system 210, a projection system 220, a workpiece stage 700, a mask stage 300, and a measurement system.
510; 其中, 所述 EUV光刻装置具有曝光位和测量位, 所述投影系统 220和 工件台 700位于曝光位, 所述测量系统 510位于测量位; 所述曝光位和测量 位分别指光刻装置的一种工位, 即完成指定工序所要占用的空间位置, 在本 实施例中, 位于曝光位的各部件用于协同工作以完成对硅片的曝光工序, 位 于测量位的各部件用于协同工作以完成对掩模的测量工序。 需要说明的是, 说明书附图中仅仅示意性地表示出了曝光位和测量位, 其工位的划分根据不 同的光刻装置可有所不同, 因而不应理解为限制本发明。 此外, 虽然图中所 示的曝光位和测量位是相邻的, 然而它们两者在空间位置上也可以是相互交 叠的, 换言之, 曝光位的部件可以与测量位的部件在空间位置上存在一定的 交叠, 只要不影响相应工序的实施即可。 所述掩模台 300承载多个反射式掩 模,统一由标号 400表示。 图 2中画出两个反射式掩模,分别为 400a和 400b, 所述 EUV光源 100发出的光线经过所述照明系统 210、 掩模台上的反射式掩 模 400a和投影系统 220照射至工件台 700上(如图中箭头所示), 所述测量 系统 510在测量位对所述反射式掩模 400b进行面型和位置测量。 510; wherein, the EUV lithography apparatus has an exposure position and a measurement position, the projection system 220 and the workpiece stage 700 are located at an exposure position, and the measurement system 510 is located at a measurement position; the exposure position and the measurement bit respectively mean lithography A station of the device, that is, a spatial position to be occupied by the specified process. In this embodiment, the components located at the exposure position are used to cooperate to complete the exposure process for the silicon wafer, and the components located at the measurement position are used for Work together to complete the measurement process for the mask. It should be noted that the exposure position and the measurement position are only schematically shown in the drawings of the specification, and the division of the stations may be different according to different lithographic apparatuses, and thus should not be construed as limiting the present invention. In addition, although the exposure bit and the measurement bit shown in the figure are adjacent, both of them may be interdigitated in the spatial position. The stacked, in other words, the components of the exposure position may overlap with the components of the measurement position in a spatial position as long as the implementation of the corresponding process is not affected. The mask table 300 carries a plurality of reflective masks, collectively indicated by reference numeral 400. Two reflective masks, 400a and 400b, are shown in FIG. 2, and the light emitted by the EUV light source 100 is irradiated to the workpiece through the illumination system 210, the reflective mask 400a on the mask stage, and the projection system 220. On the stage 700 (shown by the arrows in the figure), the measurement system 510 performs face and position measurements on the reflective mask 400b at the measurement level.
在本实施例中, 所述 EUV光刻装置还包括基础框架 600并且还具有一交 换位, 同样地, 说明书附图中也仅仅是示意性地表示出交换位, 而并不用于 限制本发明。 所述 EUV光源 100、 照明系统 210、投影系统 220、 工件台 700、 掩模台 300和测量系统 510均设置于所述基础框架 600内, 所述交换位处能 够更换反射式掩模 400。  In the present embodiment, the EUV lithography apparatus further includes a base frame 600 and also has a switching bit. Similarly, the interchangeable bits are only schematically shown in the drawings, and are not intended to limit the present invention. The EUV light source 100, the illumination system 210, the projection system 220, the workpiece stage 700, the mask stage 300, and the measurement system 510 are all disposed within the base frame 600 at which the reflective mask 400 can be replaced.
在本实施例中, 所述测量系统 510 包括至少一个传感器(RLS , Reticle Location-Leveling Sensor )且通过一测量框架 520固定在基础框架 600上, 并 位于测量位。 请参考图 4, 所述测量系统 510包括第一位置传感器 511、 第二 位置传感器 512以及多个面型传感器 513 , 例如为 8个面型传感器 513 , 所述 面型传感器 513位于第一位置传感器 511和第二位置传感器 512之间。 测量 系统 510处于测量位, 兼有掩模位置测量和掩模面型测量功能, 测量系统 510 中的各传感器按直线布置, 第一位置传感器 511、 第二位置传感器 512构成的 位置测量系统位于直线两边并能捕获到掩模载台标记和掩模标记, 面型传感 器 513 位于测量系统中央并能捕获到整个被测量的反射式掩模 400b 的掩模 面。  In this embodiment, the measurement system 510 includes at least one sensor (RLS, Reticle Location-Leveling Sensor) and is fixed on the base frame 600 by a measurement frame 520 and located at the measurement position. Referring to FIG. 4, the measurement system 510 includes a first position sensor 511, a second position sensor 512, and a plurality of face sensors 513, such as eight face sensors 513, the face sensor 513 is located at the first position sensor. Between 511 and the second position sensor 512. The measuring system 510 is in a measuring position, and has a mask position measuring and a mask surface measuring function. The sensors in the measuring system 510 are arranged in a straight line, and the position measuring system composed of the first position sensor 511 and the second position sensor 512 is located in a straight line. The mask stage marks and mask marks can be captured on both sides, and the face sensor 513 is located in the center of the measurement system and can capture the mask face of the entire reflective mask 400b being measured.
在本实施例中, 仅包括一个测量系统 510, 并位于测量位, 所述掩模台 300承载 2个反射式掩模 400a、 400b, 所述反射式掩模 400a、 400b分别由掩 模载台 410a、 410b承载与所述掩模台 300相连,一块反射式掩模 400a位于曝 光位, 另一块反射式掩模 400b位于测量位, 并与所述测量系统 510相对。  In this embodiment, only one measurement system 510 is included, and is located at the measurement position. The mask table 300 carries two reflective masks 400a, 400b, and the reflective masks 400a, 400b are respectively carried by the mask stage. The 410a, 410b bearers are coupled to the mask table 300, one reflective mask 400a is in the exposure position, and the other reflective mask 400b is in the measurement position and opposite the measurement system 510.
在本实施例中,还提出了一种 EUV光刻曝光方法,釆用上文所述的 EUV 光刻装置, 所述方法包括步骤: In this embodiment, an EUV lithography exposure method is also proposed, using the EUV described above. A lithographic apparatus, the method comprising the steps of:
S100: 在位于交换位的掩模台 300上加载反射式掩模 400a和 400b, 并在 工件台 700上加载硅片 800;  S100: loading the reflective masks 400a and 400b on the mask table 300 at the swapping position, and loading the silicon wafer 800 on the workpiece table 700;
S200: 掩模台 300运动, 将反射式掩模 400a移动至测量位, 使用测量系 统 510对所述反射式掩模 400a进行面型和位置测量;  S200: moving the mask table 300, moving the reflective mask 400a to the measurement position, and performing measurement on the surface and position of the reflective mask 400a using the measurement system 510;
S300: 移动掩模台 300 , 将反射式掩模 400a移动至曝光位(此时反射式 掩模 400b位于测量位), 并建立起反射式掩模 400a与硅片 800的位置关系; S300: moving the mask table 300, moving the reflective mask 400a to the exposure position (where the reflective mask 400b is at the measurement position), and establishing a positional relationship between the reflective mask 400a and the silicon wafer 800;
S400: 对硅片 800进行曝光处理, 同时使用测量系统 510对反射式掩模 400b进行面型和位置测量; S400: exposing the silicon wafer 800 while using the measuring system 510 to perform surface shape and position measurement on the reflective mask 400b;
S500:待曝光完毕更换硅片 800时,掩模台 300运动,将反射式掩模 400b 移动至曝光位, 并建立起反射式掩模 400b与更换后的硅片 800的位置关系; S500: when the silicon wafer 800 is replaced after the exposure, the mask table 300 moves, the reflective mask 400b is moved to the exposure position, and the positional relationship between the reflective mask 400b and the replaced silicon wafer 800 is established;
S600: 对更换后的硅片 800进行曝光处理, 循环上述步骤直至将所有硅 片 800曝光完毕。 S600: Exposing the replaced silicon wafer 800, and repeating the above steps until all the silicon wafers 800 are exposed.
具体的, 在交换位可通过 EUV光刻装置的掩模传输系统进行反射式掩模 400 交换; 可同时加载和卸载两块反射式掩模 400a、 400b; 即第一块反射式 掩模 400a首先进入测量位;位于测量位且处于第一块反射式掩模 400a下方的 测量系统(RLS ) 510开始对第一块反射式掩模 400a进行水平位置和面型高 度测量。  Specifically, the exchange mask can be exchanged by the mask transfer system of the EUV lithography apparatus; the two reflective masks 400a, 400b can be simultaneously loaded and unloaded; that is, the first reflective mask 400a first Entering the measurement location; a measurement system (RLS) 510 located at the measurement location and below the first reflective mask 400a begins to measure the horizontal position and profile height of the first reflective mask 400a.
如图 3和图 4所示, 所述反射式掩模 400设有掩模标记 Rl、 R2、 R3和 As shown in FIGS. 3 and 4, the reflective mask 400 is provided with mask marks R1, R2, R3 and
R4; 所述掩模载台 410设有掩模载台标记 RM1、 RM2、 RM3和 RM4; 所述 测量系统对所述掩模标记 Rl、 R2、 R3和 R4和掩模载台标记 RM1、 RM2、R4; the mask stage 410 is provided with mask stage marks RM1, RM2, RM3 and RM4; the measurement system marks the mask marks R1, R2, R3 and R4 and the mask stage marks RM1, RM2 ,
RM3 和 RM4进行识别, 建立反射式掩模的水平位置关系, 具体的, 掩模台RM3 and RM4 identify, establish the horizontal positional relationship of the reflective mask, specifically, the mask table
300沿水平方向往返扫描,测量系统 510中的第一位置传感器 511和第二位置 传感器 512可对两者的标记进行识别, 并建立水平位置关系。 所述测量系统The 300 is scanned back and forth in a horizontal direction, and the first position sensor 511 and the second position sensor 512 in the measurement system 510 can identify the two marks and establish a horizontal positional relationship. Measuring system
510中的面型传感器 513可以对反射式掩模 400的表面对应位置的掩模高度进 行测量, 即得到反射式掩模 400 的形貌关系, 扫描的次数由面型测量精度决 定, 同时所述第一位置传感器 511、 第二位置传感器 512用于确定反射式掩模 400和掩模载台 410的水平位置。 The surface sensor 513 in 510 can measure the mask height of the corresponding position of the surface of the reflective mask 400, that is, the topography relationship of the reflective mask 400 is obtained, and the number of scans is determined by the surface measurement accuracy. The first position sensor 511 and the second position sensor 512 are used to determine the horizontal position of the reflective mask 400 and the mask stage 410.
釆用上述方法在测量位对第一反射式掩模 400a扫描完毕后将所述反射式 掩模 400a载入曝光位, 如图 2所示。接着将反射式掩模 400a进行对准, 该步 骤通过工件台 700上的图像传感器(图未示出)测量掩模载台 410a上的掩模 载台标记 RM1、 RM2、 RM3和 RM4 , 由此推算出反射式掩模 400a空间像的 位置参数, 建立起反射式掩模 400a与硅片 800曝光场的空间位置关系, 倍率 调整量等多种参数 (即得出反射式掩模 400a高度变化所导致的套刻误差变化 量)。  The reflective mask 400a is loaded into the exposure position after the scanning of the first reflective mask 400a is completed by the above method, as shown in FIG. The reflective mask 400a is then aligned, which measures the mask stage marks RM1, RM2, RM3, and RM4 on the mask stage 410a by an image sensor (not shown) on the workpiece stage 700. Calculate the positional parameters of the spatial image of the reflective mask 400a, establish a spatial positional relationship between the reflective mask 400a and the exposure field of the silicon wafer 800, and adjust various factors such as the magnification adjustment amount (ie, obtain a height change of the reflective mask 400a). The amount of change in the engraving error caused).
进行硅片 800曝光时, 此时处于曝光位的反射式掩模 400a在建立了与硅 片 800的位置关系后, 开始对硅片 800曝光场进行连续曝光, 通过调用之前 在测量位测得的反射式掩模 400a的面型数据结合扫描位置和最优调整策略, 对掩模台 300的姿态进行前馈调整, 从而实时校准曝光场的套刻误差。 此时, 另一反射式掩模 400b正处于测量位, 测量系统 510 可对该另一反射式掩模 400b进行对准和全局格点面型粗测量( Global Coarse Grid Measure ), 所述面 型粗测量用于获取该另一反射式掩模 400b的标记位置信息和初步面型信息, 并将所测得的该另一反射式掩模 400b的面型数据传至服务器端, 作为该另一 反射式掩模 400b前馈扫描曝光时像差校准的依据。  When the silicon wafer 800 is exposed, the reflective mask 400a at the exposure position at this time establishes the positional relationship with the silicon wafer 800, and starts to continuously expose the exposure field of the silicon wafer 800, which is measured by the measurement position before the call. The surface data of the reflective mask 400a combines the scanning position and the optimal adjustment strategy to feed forward the attitude of the mask table 300, thereby calibrating the overlay error of the exposure field in real time. At this time, another reflective mask 400b is in the measurement position, and the measurement system 510 can perform alignment and global Coarse Grid Measure on the other reflective mask 400b. The coarse measurement is used to obtain the mark position information and the preliminary face shape information of the other reflective mask 400b, and transmit the measured face shape data of the other reflective mask 400b to the server end as the other The reflective mask 400b feeds back the basis of aberration calibration during scanning exposure.
等一个硅片 800扫描曝光完毕后, 该硅片 800进入交换状态, 此时处于 曝光位的反射式掩模 400a处于闲置状态,处于测量位的另一反射式掩模 400b 此时进行局部格点面型精测量( Local Fine Grid Measure ), 并将所测得的该另 一反射式掩模 400b 的面型数据传至所述一服务器, 作为该另一反射式掩模 After the scanning exposure of a silicon wafer 800 is completed, the silicon wafer 800 enters an exchange state, at which time the reflective mask 400a in the exposure position is in an idle state, and the other reflective mask 400b in the measurement position performs a local grid point at this time. a local fine Grid Measure, and passing the measured face data of the other reflective mask 400b to the server as the other reflective mask
400b前馈扫描曝光时套刻误差校准的依据。 因此, 对 400b 另一反射式掩模The basis for the calibration of the overlay error during 400b feedforward scanning exposure. Therefore, another reflective mask for 400b
400b进行面型和位置测量的时间与对硅片 800进行曝光以及更换硅片 800的 时间共用。 等到该批次硅片 800 曝光完毕后, 需要更换掩模继续曝光下一批 次硅片 800时, 则该另一反射式掩模 400b进入曝光位, 开始后续曝光。 等待 第二批次硅片 800曝光完毕, 掩模台 300进入交换位釆用第三和第四反射式 掩模与已使用的反射式掩模 400a、 400b进行交换。 如此循环直至将所有硅片 800曝光完毕。 The time for the face and position measurement of the 400b is shared with the exposure of the silicon wafer 800 and the replacement of the silicon wafer 800. After the exposure of the batch of wafers 800 is completed, the mask needs to be replaced to continue exposing the next batch of wafers 800, then the other reflective mask 400b enters the exposure position to initiate subsequent exposure. Waiting After the second batch of wafers 800 are exposed, the mask stage 300 enters the exchange location and is exchanged with the used reflective masks 400a, 400b using the third and fourth reflective masks. This cycle is repeated until all of the silicon wafers 800 have been exposed.
需要说明的是, 上述另一反射式掩模 400b与反射式掩模 400a可以具有 相同或不同的掩模图形。 如背景技术中提到的, 在 EUV高真空环境中, 掩模 散热更为困难, 当一片掩模连续曝光后掩模吸收层因受热形变, 影响成像质 量, 需等待进行降温处理而影响产率。 而釆用本实施例的光刻装置, 可以加 载两片具有相同图形的掩模, 交替进行曝光, 则可有效避免釆用同一片掩模 连续曝光所产生的受热形变问题。 既可节省降温处理所需的时间, 又能有效 提高成像质量。 实施例二  It should be noted that the other reflective mask 400b and the reflective mask 400a may have the same or different mask patterns. As mentioned in the background art, in EUV high vacuum environment, the mask heat dissipation is more difficult. When a mask is continuously exposed, the mask absorption layer is deformed by heat, which affects the image quality, and needs to wait for the temperature reduction treatment to affect the yield. . By using the lithographic apparatus of this embodiment, it is possible to load two masks having the same pattern and alternately perform exposure, thereby effectively avoiding the problem of heat deformation caused by continuous exposure of the same mask. It not only saves the time required for cooling treatment, but also improves the image quality. Embodiment 2
请参考图 5 , 在本实施例中, 提出了一种 EUV光刻装置, 是在实施例一 的基础上设置了 2个测量系统 510a和 510b,分别位于第一测量位和第二测量 位, 所述第一测量位和第二测量位分别位于曝光位的两侧, 所述掩模台 300 承载 3个反射式掩模, 分别为 400a、 400b, 400c, 各所述反射式掩模 400a、 400b, 400c由相应的掩模载台 410a, 410b, 410c承载与所述掩模台 300相连, 一块反射式掩模 400a位于曝光位, 另两块反射式掩模 400b, 400c分别位于第 一测量位和第二测量位, 并与所述第一测量位和第二测量位的 2个测量系统 510a, 510b相对。  Referring to FIG. 5, in the embodiment, an EUV lithography apparatus is proposed. Based on the first embodiment, two measurement systems 510a and 510b are disposed, which are respectively located at the first measurement position and the second measurement position. The first measurement bit and the second measurement bit are respectively located at two sides of the exposure position, and the mask table 300 carries three reflective masks, 400a, 400b, 400c, respectively, and each of the reflective masks 400a, 400b, 400c are connected to the mask table 300 by corresponding mask stages 410a, 410b, 410c, one reflective mask 400a is in the exposure position, and the other two reflective masks 400b, 400c are respectively located in the first measurement The bit and the second measurement bit are opposite the two measurement systems 510a, 510b of the first measurement bit and the second measurement bit.
本实施例提出的 EUV光刻装置以及 EUV光刻曝光方法均与实施例一相 一致, 具体请参考实施例一, 在此不再赘述。  The EUV lithography apparatus and the EUV lithography exposure method are the same as those in the first embodiment. For details, refer to the first embodiment, and details are not described herein again.
不同于实施例一中的是, 等到第一批次硅片 800 曝光完毕后, 需要继续 曝光下一批次硅片 800 ,则可以由位于第一测量位或位于第二测量位的反射式 掩模 400b (或 400c )进入曝光位, 开始后续曝光。 等待第二批次硅片 800曝 光完毕, 需要继续曝光则可以将剩下的一个测量位的反射式掩模 400c (或 400b )进入曝光位, 开始后续曝光。 因此, 本实施例提出的 EUV光刻装置可 以实现三个反射式掩模 400的交换。 实施例三 Different from the first embodiment, after the first batch of the silicon wafer 800 is exposed, it is necessary to continue to expose the next batch of the silicon wafer 800, and the reflective mask can be located at the first measurement position or at the second measurement position. The die 400b (or 400c) enters the exposure position and begins subsequent exposure. Waiting for the second batch of wafers 800 to be exposed, and continuing to expose the remaining one of the measurement sites of the reflective mask 400c (or 400b) Enter the exposure position and start the subsequent exposure. Therefore, the EUV lithography apparatus proposed in this embodiment can realize the exchange of three reflective masks 400. Embodiment 3
请参考图 6, 在本实施例中, 提出了一种 EUV光刻装置, 其包括 2个测 量系统 510a和 510b 以及两个测量位, 两个测量位分别是第一测量位和第二 测量位, 分别位于曝光位的两侧。  Referring to FIG. 6, in the embodiment, an EUV lithography apparatus is proposed, which includes two measurement systems 510a and 510b and two measurement bits, and the two measurement bits are a first measurement bit and a second measurement bit, respectively. , located on both sides of the exposure position.
但是在本实施例中,所述掩模台 300仅仅承载 2个反射式掩模 400a, 400b, 掩模台 300能够按照图 6中的箭头方向水平移动, 从而可以使两块反射式掩 模 400a、 400b在第一测量位、 曝光位以及第二测量位之间切换。  However, in the present embodiment, the mask table 300 only carries two reflective masks 400a, 400b, and the mask table 300 can be horizontally moved in the direction of the arrow in FIG. 6, so that the two reflective masks 400a can be made. , 400b switches between the first measurement bit, the exposure bit, and the second measurement bit.
其余装置和曝光方法均与实施例一相同, 在此不再赘述, 具体请参考实 施例一。  The rest of the device and the exposure method are the same as those in the first embodiment, and are not described here. For details, please refer to the first embodiment.
综上, 在本发明实施例提供的 EUV光刻装置及其曝光方法中, 由于掩模 台承载多个反射式掩模, 处于曝光位的反射式掩模在曝光的同时, 处于测量 位的另一块反射式掩模可同时进行面型和位置测量, 多批次硅片曝光时, 能 够节约掩模的面型和位置测量时间, 利用已测得的反射式掩模的面型和位置 数据进行掩模高度的前馈控制, 在保证套刻精度的情况下, 减少曝光反馈调 整时间, 所以可以提高产率; 多掩模载台的反射式掩模可以通过切换掩模的 方式, 快速地在另一块同样的反射式掩模上继续进行硅片曝光, 通过不断切 换反射式掩模可避免在高真空环境中散热困难导致反射式掩模在一段时间曝 光后的受热形变导致像质受损的情况发生。  In summary, in the EUV lithography apparatus and the exposure method thereof provided by the embodiments of the present invention, since the mask stage carries a plurality of reflective masks, the reflective mask in the exposure position is exposed while being in the measurement position. A reflective mask allows simultaneous face and position measurements. When multiple batches of wafers are exposed, mask surface and position measurement time can be saved, using the measured face and position data of the reflective mask. The feedforward control of the mask height reduces the exposure feedback adjustment time while ensuring the engraving precision, so the yield can be improved; the reflective mask of the multi-mask stage can be quickly switched by switching the mask The wafer exposure is continued on another identical reflective mask. By continuously switching the reflective mask, it is difficult to avoid heat dissipation in a high vacuum environment, resulting in thermal deformation of the reflective mask after exposure for a period of time, resulting in image quality damage. The situation happened.
进一步的, 多载台掩模可以通过切换反射式掩模的方式, 相对快速地在 另一块同样的反射式掩模上继续硅片曝光, 通过不断切换反射式掩模可使 Further, the multi-stage mask can continue to expose the wafer on another identical reflective mask relatively quickly by switching the reflective mask, by continuously switching the reflective mask.
EUV光刻装置利用效率提高, 从而降低用户对 EUV光刻装置的总拥有成本; 由于在某些工艺条件下, 需要对曝光硅片釆用双重曝光或多重曝光方式, 多 载的掩模台也可以方便地在 EUV光刻装置中满足这种需求。 由于一次可以交 换多个反射式掩模, 对多批次连续曝光来说可节省反射式掩模交换时间; 由 于釆用单个掩模台承载多个反射式掩模, 可共用一套掩模台定位测量系统, 因此多载掩模台可省去了重复测量过程, 同时也可以节省空间和成本。 The EUV lithography apparatus utilizes an increase in efficiency, thereby reducing the total cost of ownership for the EUV lithography apparatus; since under certain process conditions, it is necessary to use double exposure or multiple exposure methods for the exposed silicon wafer, the multi-load mask stage is also This need can be conveniently met in an EUV lithography apparatus. Because you can pay at one time Multiple reflective masks can save reflective mask exchange time for multiple batches of continuous exposure; a set of mask table positioning measurement systems can be shared because multiple reflective masks are used to carry multiple reflective masks Therefore, the multi-load mask table eliminates the need for repeated measurement processes and saves space and cost.
上述仅为本发明的优选实施例而已, 并不对本发明起到任何限制作用。 任何所属技术领域的技术人员, 在不脱离本发明的技术方案的范围内, 对本 发明揭露的技术方案和技术内容做任何形式的等同替换或修改等变动, 均属 未脱离本发明的技术方案的内容, 仍属于本发明的保护范围之内。  The above are only the preferred embodiments of the present invention and do not limit the invention in any way. Any person skilled in the art can make any equivalent changes or modifications to the technical solutions and technical contents disclosed in the present invention without departing from the technical solutions of the present invention. The content is still within the scope of protection of the present invention.

Claims

权利要求 Rights request
1、 一种光刻装置, 包括 EUV光源、 照明系统、 投影系统和工件台, 其 特征在于, 所述装置还包括: 1. A lithography device, including an EUV light source, an illumination system, a projection system and a workpiece stage, characterized in that the device also includes:
掩模台, 可在投影系统上方运动, 所述掩模台具有一第一载台和位于第 一载台一侧的一第二载台; 以及 The mask stage is movable above the projection system, and the mask stage has a first stage and a second stage located on one side of the first stage; and
一第一测量系统, 设置于投影系统的一侧, a first measurement system, located on one side of the projection system,
其中, 所述掩模台的第一载台用于承载一第一反射式掩模, 并当所述掩 模台移动至相对于所述投影系统的一第一位置时, 使得所述 EUV光源发出的 EUV光线经过所述照明系统、 第一反射式掩模和投影系统照射至工件台上; 其中, 所述掩模台的第二载台用于承载一第二反射式掩模, 且所述第一 测量系统的位置被设置为当所述掩模台位于所述第一位置时, 该第一测量系 统能够对所述第二反射式掩模的面型和位置进行测量。 Wherein, the first stage of the mask stage is used to carry a first reflective mask, and when the mask stage moves to a first position relative to the projection system, the EUV light source The emitted EUV light passes through the illumination system, the first reflective mask and the projection system and is irradiated onto the workpiece stage; wherein, the second stage of the mask stage is used to carry a second reflective mask, and the The position of the first measurement system is set such that when the mask stage is located at the first position, the first measurement system can measure the surface shape and position of the second reflective mask.
2、 如权利要求 1所述的装置, 其特征在于, 所述第一测量系统包括用于 测量所述反射式掩模相对于掩模台的位置关系的第一和第二传感器, 以及用 于测量所述反射式掩模的面型的多个第三传感器。 2. The device of claim 1, wherein the first measurement system includes first and second sensors for measuring the positional relationship of the reflective mask relative to the mask stage, and A plurality of third sensors measuring the surface shape of the reflective mask.
3、 如权利要求 2所述的装置, 其特征在于, 所述多个第三传感器位于第 一传感器和第二传感器之间。 3. The device of claim 2, wherein the plurality of third sensors are located between the first sensor and the second sensor.
4、 如权利要求 3所述的装置, 其特征在于, 所述第一和第二传感器以及 所述多个第三传感器排成一线性阵列, 该线性阵列的长度大于等于所述反射 式掩模的长度。 4. The device of claim 3, wherein the first and second sensors and the plurality of third sensors are arranged in a linear array, and the length of the linear array is greater than or equal to the reflective mask. length.
5、 如权利要求 1所述的装置, 其特征在于, 所述第一测量系统的位置被 设置为当所述掩模台位于所述第一位置时, 该第一测量系统与所述第二反射 式掩模相对。 5. The device of claim 1, wherein the position of the first measurement system is set such that when the mask stage is at the first position, the first measurement system is in contact with the second measurement system. Reflective mask opposite.
6、 如权利要求 1所述的装置, 其特征在于, 所述第一和第二载台上均设 有多个载台标记。 6. The device according to claim 1, characterized in that, both the first and second stages are provided with a plurality of stage marks.
7、 如权利要求 1所述的装置, 其特征在于, 所述掩模台还具有位于第一 载台的另一侧的一第三载台, 并且所述装置还包括一第二测量系统, 设置于 所述投影系统的另一侧, 其中, 所述第三载台用于承载一第三反射式掩模, 且所述第二测量系统的位置被设置为当所述掩模台位于所述第一位置时, 该 第二测量系统能够对所述第三反射式掩模的面型和位置进行测量。 7. The device according to claim 1, wherein the mask stage also has a third stage located on the other side of the first stage, and the device further includes a second measurement system, is provided on the other side of the projection system, wherein the third stage is used to carry a third reflective mask, and the position of the second measurement system is set such that when the mask stage is located When the first position is determined, the second measurement system can measure the surface shape and position of the third reflective mask.
8、 如权利要求 7所述的装置, 其特征在于, 所述第二测量系统的位置被 设置为当所述掩模台位于所述第一位置时, 该第二测量系统与所述第三反射 式掩模相对。 8. The device according to claim 7, wherein the position of the second measurement system is set such that when the mask stage is at the first position, the second measurement system is in contact with the third measurement system. Reflective mask opposite.
9、 如权利要求 1所述的装置, 其特征在于, 所述装置还包括一第二测量 系统位于所述投影系统的另一侧; 当所述掩模台移动至相对于投影系统的一 第二位置时, 使得所述 EUV光源发出的 EUV光线经过所述照明系统、 所述 第二载台承载的第二反射式掩模和投影系统照射至工件台上; 所述第二测量 系统的位置被设置为当所述掩模台位于所述第二位置时, 该第二测量系统能 够对所述第一载台承载的第一反射式掩模的面型和位置进行测量。 9. The device of claim 1, wherein the device further includes a second measurement system located on the other side of the projection system; when the mask stage moves to a first measurement system relative to the projection system, In the second position, the EUV light emitted by the EUV light source is illuminated to the workpiece stage through the illumination system, the second reflective mask carried by the second stage and the projection system; the position of the second measurement system The second measurement system is configured to measure the surface shape and position of the first reflective mask carried by the first stage when the mask stage is located at the second position.
10、 如权利要求 1 所述的装置, 其特征在于, 所述第一反射式掩模和第 二反射式掩模具有相同的掩模图形。 10. The device according to claim 1, wherein the first reflective mask and the second reflective mask have the same mask pattern.
11、 一种釆用如权利要求 1至 6中任意一项所述的光刻装置的曝光方法, 其特征在于, 在使用第一载台承载的第一反射式掩模对工件台上的硅片进行 曝光的同时, 所述第一测量系统对第二载台承载的第二反射式掩模的面型和 位置中的至少一个进行测量。 11. An exposure method using the photolithography apparatus according to any one of claims 1 to 6, characterized in that the silicon on the workpiece stage is exposed to the first reflective mask carried by the first stage. While the sheet is being exposed, the first measurement system measures at least one of the surface shape and the position of the second reflective mask carried by the second stage.
12、 一种釆用如权利要求 7至 8中任意一项所述的光刻装置的曝光方法, 其特征在于, 在使用第一载台承载的第一反射式掩模对工件台上的硅片进行 曝光的同时, 所述第一测量系统对第二载台承载的第二反射式掩模的面型和 位置中的至少一个进行测量和 /或所述第二测量系统对第三载台承载的第三反 射式掩模的面型和位置中的至少一个进行测量。 12. An exposure method using the photolithography apparatus according to any one of claims 7 to 8, characterized in that the silicon on the workpiece stage is exposed to the first reflective mask carried by the first stage. While the film is being exposed, the first measurement system measures at least one of the surface shape and position of the second reflective mask carried by the second stage, and/or the second measurement system measures the third stage. At least one of a surface shape and a position of the third reflective mask being carried is measured.
13、 一种釆用如权利要求 9所述的光刻装置的曝光方法, 其特征在于, 在使用第一和第二载台其中一个承载的反射式掩模对工件台上的硅片进行曝 光的同时, 所述第一和第二测量系统中的相应一个对第一和第二载台其中另 一个承载的反射式掩模的面型和位置中的至少一个进行测量。 13. An exposure method using the photolithography apparatus according to claim 9, characterized in that: While the silicon wafer on the workpiece stage is exposed using a reflective mask carried by one of the first and second stages, a corresponding one of the first and second measurement systems measures the first and second stages. At least one of the surface shape and the position of the reflective mask carried by the other one is measured.
PCT/CN2014/085135 2014-05-06 2014-08-26 Euv photoetching device and exposure method therefor WO2015169012A1 (en)

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