WO2015165288A1 - 一种机械能与电能转换装置 - Google Patents

一种机械能与电能转换装置 Download PDF

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WO2015165288A1
WO2015165288A1 PCT/CN2015/070748 CN2015070748W WO2015165288A1 WO 2015165288 A1 WO2015165288 A1 WO 2015165288A1 CN 2015070748 W CN2015070748 W CN 2015070748W WO 2015165288 A1 WO2015165288 A1 WO 2015165288A1
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cavity
semiconductor substrate
conversion device
mechanical energy
silicon
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PCT/CN2015/070748
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French (fr)
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沈培锋
许洪华
李凯
王春宁
延巧娜
凃俊
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国家电网公司
江苏省电力公司
江苏省电力公司南京供电公司
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Publication of WO2015165288A1 publication Critical patent/WO2015165288A1/zh

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means

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  • the invention relates to a mechanical energy and electric energy conversion device, in particular to a mechanical energy and electric energy mutual conversion device based on solid nanopores, belonging to the technical field of energy.
  • the object of the present invention is to provide a device capable of realizing mechanical energy and electric energy conversion directly through voltage and pressure emphasizing system, thereby improving energy conversion efficiency and practical application of engineering.
  • the basic technical solution of the mechanical energy and electrical energy conversion device of the present invention comprises: a sheet-shaped semiconductor substrate made of a nano-scale fluid channel (nano-hole or nano-channel), the semiconductor substrate being disposed in the electrolyte-filled electrolyte In the cavity, the cavity has a first surface and a second surface opposite to and opposite to the semiconductor substrate, respectively, and movable relative to the semiconductor substrate; the two sides of the semiconductor substrate separate the cavity, The first surface and the second surface are respectively fixed to the positive and negative external electrode plates connected to the positive and negative electrodes of the power source.
  • the principle of the invention is that when an external mechanical pressure is applied to the first surface or the second surface of the passage, the drive will be driven
  • the electrolyte is passed through a nanoscale fluid orifice. Aggregated charges (or ions) in the nanoscale fluid channel due to the shielding of the intrinsic charge of the intrinsic surface charge tend to selectively allow only ions of opposite polarity in the electrolyte to pass, thereby making the cavity on both sides of the semiconductor substrate
  • the electrolyte produces an ion concentration gradient, resulting in charge transport in the outer loop between the positive and negative outer electrode plates, forming a current that converts mechanical energy to electrical energy.
  • the selectivity of the ions by the nanoscale (scale) fluid channels also causes ions of opposite polarity to pass through the nanoscale (scale) fluid channels, which lead to the electrolyte.
  • the fluid is subjected to additional electrical forces, creating a flow trend that enables the conversion of electrical energy to mechanical energy.
  • the semiconductor substrate is a silicon-based substrate made of a sheet-like silicon-based wafer having a thickness of 0.5 to 0.7 mm.
  • a cylindrical microcavity having a radius of 0.05-0.30 mm is distributed on the silicon-based substrate, and the thickness of the cavity bottom is 40 nm-1 um, and the nano-scale fluid passages are spaced apart.
  • the nanoscale fluid channel is a nanopore having a radius of 5 ⁇ 2 nm.
  • the electrolyte is a KCL or NaCL solution.
  • the electrolyte has a concentration of 0.5 to 1.3 mol/L and a Ph value of 7.5 to 8.1.
  • the invention not only has the remarkable advantages of simple structure and high conversion efficiency, but also realizes the conversion of clean resources to electric energy, and is expected to provide an emerging energy conversion path for the increasingly tight power supply.
  • the conversion of electrical energy to mechanical energy can effectively remove and filter toxic polluted charged particles, and provide a new idea for sewage treatment technologies such as purification of water sources.
  • the nanopore power generation device thus produced can provide emergency charging.
  • Figure 1 is a schematic view showing the structure of an embodiment of the present invention.
  • FIG. 2 is a schematic view showing the structure of a silicon crystal of the silicon-based substrate of FIG. 1.
  • FIG. 3 is a partially enlarged schematic view of FIG. 2.
  • FIG. 3 is a partially enlarged schematic view of FIG. 2.
  • the embodiment is a nanopore-based mechanical energy and electrical energy conversion device, and the basic unit structure thereof
  • a semiconductor silicon-based substrate 1 having a nano-scale fluid channel, nanopore 2 is formed.
  • the silicon-based substrate 1 is placed in a cavity filled with the electrolyte 3.
  • the cavity 3 has a first surface, a lower surface 6 and a second surface, an upper surface 4, which are opposed to both sides of the silicon-based substrate 1 and are pressed against the silicon-based substrate 1, respectively. Both sides of the silicon-based substrate 1 separate the cavity from the upper and lower chambers.
  • the lower surface 6 and the upper surface 4 are respectively fixed to the positive and negative outer electrode plates 7, 5 which are connected to the positive and negative electrodes of the power source 10.
  • the silicon-based substrate 1 is made of a sheet-like silicon-based wafer having a thickness of 0.5-0.7 mm. As shown in FIG. 2, a cylindrical micro-cavity 1-1 having a surface distribution radius of 0.05 to 0.30 mm is used for the cavity of the silicon-based wafer. The thickness of the bottom is controlled at 40 nm - 1 um. As shown in Fig. 3, the nanopores 2 are spaced apart on the bottom of the chamber.
  • the main production process steps are:
  • Step 1 Clean the silicon-based wafer, etch it into a neatly arranged micro-cavity by microelectronic etching, and control the thickness of the cavity bottom at 40nm-1um, using microelectronic process etching or high-energy heavy ion irradiation.
  • the semiconductor silicon-based substrate 1 is such that the cavity bottom of the micro-cavity is distributed in a cylindrical array of nano-holes 2; the radius of the nano-hole 2 is 5 nm (10 nm in diameter), and the axial length, that is, the thickness of the bottom of the silicon-based substrate 1 is 40 nm- 1um;
  • Step 2 After the silicon-based substrate made of the cylindrical nano-hole 2 is cleaned, it is placed in a cavity for holding the electrolyte 3;
  • Step 3 Fix the lower surface 6 of the cavity
  • Step 4 Injecting electrolyte 3 into the cavity, such as KCL, NaCL, etc., the concentration is 0.5-1.3 mol/L, the Ph value is 7.5-8.1, and the silicon-based substrate 1 and the nanopore 2 layer the electrolyte.
  • the cavity such as KCL, NaCL, etc.
  • the concentration is 0.5-1.3 mol/L
  • the Ph value is 7.5-8.1
  • the silicon-based substrate 1 and the nanopore 2 layer the electrolyte.
  • Step 5 preparing upper and lower outer electrode plates 5, 7;
  • Step 6 Add a weak current measuring device 9 and a power source 10 between the outer electrode plate 5 on the cavity and the outer electrode plate 7 on the cavity.
  • the charge has the characteristics of "same-repeat repulsion and opposite-sex attraction"
  • charges (or ions) of the same polarity as the surface of the silicon-based substrate 1 are repelled away from the nanopore region, and the surface charge of the silicon-based substrate 1 is opposite.
  • the electric charge (or ions) is attracted to the inner surface of the nanopore 2 and the like and accumulated.
  • an external mechanical pressure (10 bar-200 bar) is applied to the upper surface 4 or the lower surface 7 of the cavity, the same charge (or ions) cannot pass through the nanopore 2 to form both sides of the silicon-based substrate 1 due to the flow of the electrolyte.
  • the ion concentration gradient of the lower chamber generates a current to realize the conversion of mechanical energy to electric energy; when a voltage (usually 0.21-0.5 V) is applied between the upper and lower outer electrode plates 5, 7, the silicon-based substrate 1 is on both sides.
  • the gradient of the ion concentration gradually formed in the lower chamber will produce a tendency to cause the electrolyte to flow in a direction in which the ion concentration gradient is decreased, thereby causing displacement of the upper surface 4 or the lower surface 7 relative to the silicon-based substrate 1, thereby realizing electrical energy to fluid mechanical energy. Conversion.
  • the device of the present embodiment can realize the conversion of mechanical energy to electric energy by applying external mechanical pressure through the boundary of the cavity on both sides of the nanopore; or by applying a certain voltage outside the boundary of the cavity to realize electrical energy to mechanical energy. Conversion. Since the external pressure can quickly realize the simple conversion to the electric energy, the device of the embodiment can be used for charging in a sudden emergency situation of a new smart device such as a mobile phone or a micro mobile device, and solving the charging difficulty in the case of no power supply.

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Abstract

一种机械能与电能转换装置，该装置包括制有纳米级流体通道的半导体衬底（1），该半导体衬底安置在充斥电解液（3）的腔体中，该腔体具有分别与半导体衬底两面相对且受压后可相对半导体衬底移动的第一表面（6）和第二表面（4），该半导体衬底的两面将腔体分隔，该第一表面和第二表面分别与连接电源（10）正、负极的正、负外电极板（7， 5）固连。该机械能与电能转换装置具有结构简单、转换效率高的优点，且能实现清洁资源向电能的转换。

Description

一种机械能与电能转换装置 技术领域
本发明涉及一种机械能与电能转换装置，尤其是一种基于固体纳米孔的机械能与电能相互转换装置，属于能量技术领域。
背景技术
据申请人了解，长期以来，机械能与电能的转换装置主要借助切割磁力线运动。
在日趋紧张的电力供应矛盾下，探索新能源的开发利用领域，寻求新的能源供电方式、方法受到了国内外专家、研究团队的广泛研究。通过电压与压强调制实现机械能与电能的转换是近些年来新兴的研究领域之一，然而由于缺乏直接的转换装置设计、工程应用，相关研究多为理论仿真为主,能量转换效率偏低。
发明内容
本发明的目的在于：提出一种可以直接通过电压与压强调制实现机械能与电能转换的装置，从而提高能量转换效率、工程的实际应用性。
为了达到以上目的，本发明的机械能与电能转换装置基本技术方案为：包括制有纳米级流体通道(纳米孔或纳米沟道)的片状半导体衬底，所述半导体衬底安置在充斥电解液的腔体中，所述腔体具有分别与半导体衬底两面相对且受压后可相对半导体衬底移动的第一表面和第二表面；所述半导体衬底的两面将腔体分隔，所述第一表面和第二表面分别与连接电源正、负极的正、负外电极板固连。
现有技术加工纳米级流体通道的方法已经成熟，申请号为010101381212.4、200910010025.9以及201110233453.5的中国专利分别公开了基于AFM的纳米沟道加工方法、聚合物平面纳米沟道制作方法和纳米流体通道及其制作方法。这些基于固体材料、尤其是半导体衬底的纳米级(尺度)流体通道，如纳米沟道(nanochannel)、纳米孔(nanopore)，在通道内壁表面存在的电荷会吸引相反极性的电荷(或者离子)并排斥同种极性的电荷(或者离子)，从而吸引相反极性的电荷(或者离子)聚集。
本发明的原理为：当外部机械压强施压于第一表面或通道第二表面时，将驱 使电解液流经纳米级的流体孔。纳米级流体通道内由于内在表面电荷的对同性电荷的屏蔽作用造成的聚集的电荷(或者离子)势必选择性地只允许电解液中相反极性的离子通过，从而使半导体衬底两侧腔体的电解液产生离子浓度梯度，结果在正、负外电极板之间的外回路产生电荷输运，形成电流，实现机械能向电能的转换。反之，当正、负外电极板之间施加电压时，同样由于纳米级(尺度)流体通道对离子的选择性，导致相反极性的离子通过纳米级(尺度)流体通道，这些离子导致电解液流体承受额外的电学力，从而产生流动趋势，实现了电能向机械能的转换。
本发明进一步的完善是
所述半导体衬底为厚度0.5-0.7mm片状硅基晶圆制成的硅基衬底。
所述硅基衬底上分布半径0.05-0.30mm的圆柱型微型凹腔，所述凹腔腔底的厚度为40nm-1um，间隔分布有纳米级流体通道。
所述纳米级流体通道为半径为5±2nm的纳米孔。
所述电解液为KCL或NaCL溶液。
所述电解液的浓度为0.5-1.3mol/L，Ph值为7.5-8.1。
本发明不仅具有结构简单、转换效率高的显著优点，而且实现了清洁资源向电能的转换，有望为日趋紧张的电力供应提供了一种新兴的能源转换途径。同时电能向机械能的转换，可以有效去除、过滤溶液等有毒性污染性带电粒子，为净化水源等污水处理技术提供一种新思路，由此制成的纳米孔发电装置可提供应急充电。
附图说明
下面结合附图对本发明作进一步的说明。
图1是本发明一个实施例的结构示意图。
图2是制作图1硅基衬底的硅晶结构示意图。
图3为图2的局部放大结构示意图。
其中，1为硅基衬底；2为纳米孔；3为电解液；4为上表面；5为上外电极板；6为下表面；7为下外电极板；8为机械压强的施加位置和方向；9为微弱电流测量设备；10为电源。
具体实施方式
本实施例为一种基于纳米孔的机械能与电能的转换装置，其基本的单元结构 如图1所示，包括制有纳米级流体通道——纳米孔2的半导体硅基衬底1。该硅基衬底1安置在充斥电解液3的腔体中。腔体3具有分别与硅基衬底1两面相对且受压后可相对硅基衬底1移动的第一表面——下表面6和第二表面——上表面4。硅基衬底1的两面将腔体分隔上、下两腔。下表面6和上表面4分别与连接电源10正、负极的正、负外电极板7、5固连。
硅基衬底1采用厚度0.5-0.7mm的片状硅基晶圆制成，如图2所示，硅基晶圆的表面分布半径0.05-0.30mm的圆柱型微型凹腔1-1，腔底的厚度控制在40nm-1um，如图3所示，腔底上分别制有间隔分布的纳米孔2。
其主要制作工艺步骤为：
步骤一：清洗硅基晶圆，采用微电子刻蚀工艺刻蚀成整齐排列的微型凹腔，并将腔底厚度控制在40nm-1um，，在采用微电子工艺刻蚀或高能重离子辐照半导体硅基衬底1，使微型凹腔的腔底分布圆柱状的纳米孔2阵列；纳米孔2半径为5nm(直径10nm)，轴向长度即硅基衬底1的腔底厚度为40nm-1um；
步骤二：将制成圆柱状纳米孔2的硅基衬底进行清洗处理后，安置于盛放电解液3的腔体中；
步骤三：固定好腔体的下表面6；
步骤四：向腔体注入电解液3，如KCL、NaCL等溶液，其浓度为0.5-1.3mol/L，Ph值为7.5-8.1，硅基衬底1与纳米孔2将电解液分层上、下两个腔体；
步骤五：制备上、下外电极板5、7；
步骤六：在腔体上外电极板5、腔体下外电极板7之间加装微弱电流测量设备9、电源10。
因电荷具有“同性相斥、异性相吸”的特点，与硅基衬底1表面相同极性的电荷(或者离子)会被排斥远离纳米孔区域，而与硅基衬底1表面电荷异性的电荷(或者离子)则会被吸引在纳米孔2内表面等处并积累。当在腔体上表面4或下表面7施加外部机械压强(10bar-200bar)，即可因电解液流动时，同性电荷(或者离子)无法通过纳米孔2而形成硅基衬底1两侧上、下腔的离子浓度梯度，产生电流，实现机械能向电能的转换；当在上、下外电极板5、7之间外加电压(通常0.21-0.5V)时，硅基衬底1两侧上、下腔逐渐形成的离子浓度梯度将产生使电解液朝使离子浓度梯度减小方向流动的趋势，从而导致上表面4或下表面7相对硅基衬底1的位移，实现电能向流体机械能的转换。
理论和试验都证明，本实施例的装置可以通过纳米孔两边的腔体边界，通过施加外部机械压强，实现机械能向电能的转换；或通过在腔体边界外部施加一定电压，实现电能向机械能的转换。由于外部的压强就可以快捷实现向电能的简易转换，因此本实施例的装置可用于手机等新型智能设备、微型移动设备的意外紧急情况下充电，解决无电源场合的充电困难。

Claims (6)

  1. 一种机械能与电能转换装置，包括制有纳米级流体通道的片状半导体衬底，其特征在于：所述半导体衬底安置在充斥电解液的腔体中，所述腔体具有分别与半导体衬底两面相对且受压后可相对半导体衬底移动的第一表面和第二表面；所述半导体衬底的两面将腔体分隔，所述第一表面和第二表面分别与连接电源正、负极的正、负外电极板固连。
  2. 根据权利要求1所述的机械能与电能转换装置，其特征在于：所述半导体衬底为厚度0.5-0.7mm片状硅基晶圆制成的硅基衬底。
  3. 根据权利要求2所述的机械能与电能转换装置，其特征在于：所述硅基衬底上分布半径0.05-0.30mm的圆柱型微型凹腔，所述凹腔腔底的厚度为40nm-1um，间隔分布有纳米级流体通道。
  4. 根据权利要求3所述的机械能与电能转换装置，其特征在于：所述纳米级流体通道为半径为5±2nm的纳米孔。
  5. 根据权利要求4所述的机械能与电能转换装置，其特征在于：所述电解液为KCL或NaCL溶液。
  6. 根据权利要求5所述的机械能与电能转换装置，其特征在于：所述电解液的浓度为0.5-1.3mol/L，Ph值为7.5-8.1。
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CN203827222U (zh) * 2014-04-28 2014-09-10 国家电网公司 一种机械能与电能转换装置

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