WO2015158509A1 - Détecteur de rayons x à conversion directe et système de tomodensitométrie - Google Patents

Détecteur de rayons x à conversion directe et système de tomodensitométrie Download PDF

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Publication number
WO2015158509A1
WO2015158509A1 PCT/EP2015/056367 EP2015056367W WO2015158509A1 WO 2015158509 A1 WO2015158509 A1 WO 2015158509A1 EP 2015056367 W EP2015056367 W EP 2015056367W WO 2015158509 A1 WO2015158509 A1 WO 2015158509A1
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WO
WIPO (PCT)
Prior art keywords
cathode
ray detector
grid
chnet
anode
Prior art date
Application number
PCT/EP2015/056367
Other languages
German (de)
English (en)
Inventor
Thorsten Ergler
Edgar Göderer
Björn KREISLER
Mario Reinwand
Christian Schröter
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2015158509A1 publication Critical patent/WO2015158509A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors

Definitions

  • the invention relates to a direct-converting X-ray detector for detecting X-radiation, comprising at least one semiconductor used for the detection of X-radiation, a cathode applied to one side of the semiconductor and a pixelated anode applied to an opposite side, one pixel of the
  • Anode is formed in each case from a group of subpixels, and a scattered radiation grid for reducing the incidence of scattered X-radiation. Furthermore, the invention relates to a CT system with a direct-conversion X-ray detector.
  • direct-conversion detectors based on semiconducting materials, such as CdTe, CdZnTe, CdZnTeSe,
  • the polarization refers to the reduction of the detected count rate at high photon or Strahlungsflüs ⁇ sen.
  • the polarization is caused by the very low mobility of the charge carriers, in particular the electron imperfections or holes, and by the concentration of intrinsic impurities in the semiconductor.
  • the polarization thus results from the reduction of the electric field due to fixed charges bound to impurities, the so-called space charge of the semiconductor, which act as trapping and recombination centers for the charge carriers generated by the X-rays. This reduces the carrier lifetime and mobility, which in turn leads to a reduction in the detected count rate at the high radiation flux density.
  • the space charge in the semiconductor can be distributed unevenly in the material due to an inhomogeneous incident on the semiconductor X-ray and change in the course of irradiation. These changes result in a lateral shift of the detected counts in a pixellated electrode. That is, the count rates of adjacent pixels of the electrode are different, whereby the spatial allocation of the count events becomes erroneous. Ultimately, image artifacts are the result.
  • the inhomogeneities in the irradiation of the semiconductor are Doomed ⁇ gently through the object to be examined.
  • the X-rays differ ⁇ Liche directions of incidence of the individual rays on the semiconductor due to a different scattering in the object to be examined on, so that can not be exactly predicted, from which direction the X-ray radiation on the
  • WO 2008/108 995 Al describes a cap made of a flexible circuit board for a Röntgenstrahlungs- detector for the reduction of edge effects in the detector material, the cap, the entire detector material, a ⁇ finally the electrode covering applied thereto. Furthermore, the use of control electrodes is described here, which are arranged directly below the cap. The use of such an X-ray detector in CT systems is not described.
  • X-ray facing side of the detecting semiconductor material is arranged.
  • a control electrode is arranged around the individual pixels of the anode.
  • an additional non-uniformity of the electric field can be introduced into the semiconductor, which counteracts the intrinsically existing and radiation-induced inhomogeneities, so that the inhomogeneities is mutually ausglei ⁇ chen and the drift reduced within a pixel. Furthermore, by means of a structured cathode
  • the cathode can be structured differently, that is, the recesses of the cathode can be shaped differently.
  • the shape of the cathode is determined by the shape and arrangements of the recesses.
  • a cathode of a plurality of individual, spaced apart tiles the electrical connection of the individual tiles is ensured by an additional conductor layer on the tiles or elekt ⁇ -conductive connecting webs between the tiles. It is thereby possible to apply a uniform voltage to all tiles.
  • the size of a tile essentially corresponds to the size of at least one subpixel or one pixel.
  • the tiles can be arranged congruent ⁇ equal to the subpixels or to the pixels. The same applies analogously to the recesses of a grid-shaped cathode.
  • the tiles are contacted by means of the additional conductor layer.
  • the grid-shaped cathode can be insulated from the conductor layer by an additional insulation layer or passivation layer.
  • the voltage supply of the cathodes can then take place laterally, for example over the outer edge of the detector surface.
  • the inventors propose a direct-conversion X-ray detector for detecting X-radiation, in particular for use in a CT system, comprising at least one semiconductor used to detect X-radiation, a cathode applied on one side of the semiconductor and one on an opposite one ,
  • the effect to improve side applied pixelated anode wherein a pixel of the ano ⁇ de each composed of a group is formed of sub-pixels, and an anti-scatter grid to reduce the incidence of scattered X-rays, that the cathode anode pixel size-related recesses having to lower ⁇ differences in the course of the electrical Field in the semiconductor on the basis of different ⁇ incident X-ray radiation compensate.
  • the semiconductor is advantageously the materials commonly used in direct-conversion detectors for use in CT systems, such as CdTe, CdZnTe, CdZnTeSe or CdTeSe.
  • an electrode designed as a metallization layer is applied in each case.
  • the cathode is on one of the X-ray radiation side facing the semiconductor applied and the anode corresponding to the overlying against ⁇ , facing away from the X-ray radiation side of the semiconductor.
  • the anode is formed pixelated, that is, it comprises a plurality of pixels, which in turn are each composed of a group of non-shadowed subpixels.
  • the pixels also called image pixels, are used for radiation detection and are therefore not shaded by the scattered radiation grid by the incident X-ray radiation.
  • Subpixels are arranged in each case between these counting image pixels, which separate the pixels from one another. This separating sub-pixels are arranged beneath the grating bars of the scattered ray grid ⁇ and are thus shadowed ⁇ incident from the X-ray radiation.
  • the subpixels of a pixel and the remaining, shaded subpixels are each electrically connected to the detector electronics.
  • the cathode has anode pixel size-related recesses.
  • anode pixel size based clarifies that the size or area is a recess in a certain relation to the size of a sub-pixel or pixel, in particular based on the large ⁇ SSE and positioning.
  • a recess in the context of the invention represents a continuous through the material of the cathode
  • the recesses are formed periodically.
  • the recesses are formed uniformly.
  • Another embodiment provides different recesses.
  • the recesses are rectangular, wherein the sides of the rectangular recesses are arranged parallel, in particular projectively congruent, to the sides of the pixels or subpixels.
  • An embodiment of the invention provides that a lattice-shaped cathode is formed by the recesses.
  • a grid-shaped cathode is preferably formed by rectangular, periodically arranged and spaced-apart recesses, that is to say gable-shaped recesses. Furthermore, in the case of a grid-shaped cathode, the center lines of the grid-shaped cathode are projectively arranged congruently to the center lines of the scattered radiation grid. In the direction of incidence of
  • the width of a grid web of the grid cathode can be either narrower or wider than or equal to the width of a grid web of the scatter ⁇ beam grid. Consequently, the recesses of the git ⁇ terförmigen cathode are preferably arranged above the scoring, non-shaded pixels and sub-pixels and the lattice TerStege the cathode via the non-scoring, shaded sub-pixels.
  • the recesses of the grid-shaped cathode advantageously have an area which corresponds at least to the area of at least one subpixel of the anode.
  • the recesses are arranged vertically above the subpixels.
  • an off ⁇ savings has a surface which approximately corresponds to the area of a pixel of the anode.
  • a kacheiförmige cathode is formed with a plurality of individual tiles through the recesses.
  • the recesses are formed lattice-shaped in this embodiment.
  • the center of a tile projectively congruent with the center of a free area within the scattered radiation grid.
  • the tiles of the cathode are therefore preferably located directly below the free areas.
  • a tile on a surface which corresponds at least to the surface Minim ⁇ least a subpixel of the anode.
  • a tile has an area ⁇ which approximately corresponds to the area of a pixel of the anode.
  • the tiles are preferably arranged approximately congruent to the pixels or subpixels.
  • the lattice-shaped recesses of the cachet-shaped cathode are preferably arranged above the non-counting, shadowed subpixels.
  • a tile of the cathode may therefore cover several sub-pixels or a pixel from ⁇ , so that the drift can be reduced to sub-pixel or pixels ⁇ level.
  • the individual tiles are advantageously electrically conductively connected to each other, so that the kacheiförmige cathode can be beauf beat with a single potential ⁇ .
  • an additional conductor layer can be applied to the kacheiförmigen cathode, which connects the tiles electrically to each other.
  • the conductor layer is preferably used as a xible, conductive layer, also called HV-Flex layer, out ⁇ forms.
  • a material for this purpose for example, is a conductive or coated or provided with integrated metal ⁇ sheets plastic film.
  • Connecting webs are arranged to miteinan ⁇ the tiles to connect, for example, from the same materials as the electrodes.
  • Yet another embodiment of the invention provides that both a lattice-shaped cathode and a kacheiförmige cathode are formed by the recesses, wherein the grid-shaped cathode and the kacheiförmige cathode are subjected to different voltages.
  • the tiles of the kacheiförmigen cathode are preferably in the spaces between the grid bars of the lattice-shaped
  • the tiles and the grid webs of the cathodes are each arranged at a distance from one another.
  • the grid-shaped cathode is formed for example as a control electrode, also called steering grid.
  • the lattice-shaped cathode is particularly preferably arranged below the scattered radiation grid, ie above the non-counting, shadowed subpixels of the anode.
  • an insulating layer is advantageously applied, which is the lattice-shaped
  • the field line courses in the semiconductor can be compensated for and the drift can be reduced.
  • the drift can be reduced in the shaded by the Streustrahlgit ⁇ ter of the x-radiation areas of the semiconductor.
  • the inventors propose a CT system comprising a direct conversion X-ray detector according to the invention.
  • image artifacts can be avoided by the drift-reduced detector.
  • FIG. 1 shows a schematic representation of a CT system
  • FIG. 2 is a schematic, fragmentary cross-sectional ⁇ representation of an X-ray detector
  • FIG. 3 shows a schematic, fragmentary cross-sectional illustration of an X-ray detector according to the invention with a cachet-shaped cathode in a first embodiment
  • FIG 3 is a schematic, fragmentary plan view of the X-ray detector with a kacheiförmigen cathode in another embodiment
  • FIG 6 is a schematic, fragmentary cross-sectional ⁇ representation of the X-ray detector according to the invention with a grid-shaped cathode
  • FIG 8 is a schematic, sectional Querterrorismsdar ⁇ position of the X-ray detector according to the invention having a grid and cathode de kacheiförmigen and
  • FIG 9 is a schematic, fragmentary plan view of the
  • Figure 1 shows an exemplary CT system Cl.
  • System Cl comprises a gantry housing C6, in which there is a gantry (not shown here), to which a first x-ray tube C2 is fastened with an opposite first detector C3.
  • a second x-ray tube C4 is provided with a second opposing detector C5.
  • This process is controlled by a computing and control unit C10 using computer programs Prgi to Prg n .
  • the detectors C3 and C5 are formed as Suitekonvertierende Rönt ⁇ genstrahlungsdetektoren, which in the embodiment shown here, a semiconductor used for the detection of X-rays, a cathode and an countertransference lying pixelized anode, wherein a pixel of the anode is formed in each case from a group of subpixels (see, for example, Figures 4 and 7), and a scattered radiation grid having a plurality of grid bars for reducing the incidence of scattered X-radiation.
  • the cathode anode pixel size related From ⁇ savings on to compensate for differences in the course of the electric potential lines in the semiconductor due to different incident X-rays (see Figures 3, 6 and 8).
  • FIG. 2 shows a schematic, partial cross-sectional view of a known ⁇ X-ray detector during incidence of X-rays.
  • the pixelated anode On the side facing away from the X-ray side of the semiconductor 1, the pixelated anode is applied, wherein in this illustration, only the subpixels 2 are shown.
  • the subpixels 2 are grouped in groups to be counted pixels, which are used for detection.
  • the pixels or the unshaded subpixels 2 are each arranged in the free areas between the grid bars 5. Between the pixels, that is to say below the grating webs 5, the subpixels 2 are shaded by the grating webs 5 from the X-radiation and are therefore not used for detection.
  • These shadowed sub-pixels 2 space and isolate the counting pixels (see, for example, FIG. 4).
  • a detector electronics 4 is arranged, which is formed in the embodiments shown here as an ASIC.
  • the cathode 6 is applied to the opposite, the X-radiation side facing the semiconductor 1, wherein the cathode 6 is formed according to the prior art as Wegge ⁇ ing, full-surface metallization.
  • the incident X-ray radiation causes curvature of the electric field or a curvature of the potential lines E. This is particularly pronounced in the areas below the grid web 5 shown here of the scattered beam grid ⁇ .
  • the curvature of the potential lines E occurs a lateral charge carrier migration and thus a drift in each adjacent pixel.
  • FIG. 3 shows a schematic, partial cross-sectional view of a ⁇ X-ray detector according to the invention with a cathode in an ERS kacheiförmigen th embodiment.
  • the kacheiförmige cathode comprises a plurality of rectangular, periodically arranged tiles 6a.
  • the recesses 6c of the cathode are thus arranged in a grid shape and space the tiles 6a.
  • the recesses 6c are arranged below the grating webs 5, ie above the shadowed subpixels 2. Accordingly, the tiles 6a are arranged above the counting pixels of the anode (see FIG. 4).
  • the potential lines E of the electric field in the semiconductor 1 have less inhomogeneities under X-radiation than in the situation shown in FIG.
  • the potential lines E run approximately parallel here. The curvatures of the potential lines E in the shaded areas are thus balanced.
  • an additional conductor layer 7 is formed, which electrically conductively connects the spaced apart tiles 6a so that they can be subjected to a uniform voltage.
  • Thechroszu ⁇ leadership for example, the sides carried by the detector edges off.
  • FIG 4 is a schematic, fragmentary plan view of the ⁇ X-ray detector according to the figure 3 shows ⁇ ge. This view shows in particular the pixelation of the ano de ⁇ with the shaded and non-shaded Subpi- xeln 2.
  • the hatched tiles illustrated 6a of the cathode are disposed on the pixels of the anode and the same size, while the recesses 6c under the grid bars 5 and are arranged above the non-counting, shaded subpixels 2.
  • the center of a tile 6a projectively congruent with the center of a free area between the grid bars 5.
  • a representation of the conductor layer is omitted.
  • FIG. 5 shows a schematic, fragmentary, top view of the X-ray detector with a kacheiförmigen cathode between the grid bars 5 of the scattered radiation grid in another embodiment.
  • the individual tiles 6a of the kacheiförmigen cathode are connected by means of connecting webs 8 electrically conductive together.
  • a representation of the anode and of the semiconductor is dispensed with.
  • FIGS. 6 and 7 show a further embodiment of the structured cathode.
  • the recesses form here a grid-shaped cathode 6b.
  • FIG. 6 shows a schematic cross-sectional representation. It can be seen, the arrangement of the grid bars of the grid-shaped cathode 6b below the grid bars 5 of the scattered radiation grid. In other words, the center lines of the scattered beam grid and the grid-shaped cathode 6b projectively congruent.
  • the grid-cathode terförmige 6b is mentioned about the shaded sub ⁇ pixels 2 and the recesses are shown on the counted pixels as in the plan view of Figure 7 are arranged.
  • FIGS. 8 and 9 show a further embodiment of the cathode structured according to the invention.
  • the cathode is formed both lattice and kacheiförmig.
  • the tiles 6a are each between the grid bars of the grid-shaped Cathode disposed 6b, wherein the tiles 6a and the grid-shaped cathode 6b are each spaced from each other (see ⁇ figure 8).
  • the lattice-shaped cathode 6b according to FIG. 6 is arranged below the lattice webs 5 of the scattered-beam lattice, and the louvers 6a are arranged in the non-shaded regions between the lattice webs 5 according to FIG.

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)

Abstract

L'invention concerne un détecteur de rayons X à conversion directe (C3, C5) servant à détecter des rayons X, comprenant au moins un semi-conducteur (1) utilisé pour la détection de rayons X, une cathode (6) déposée sur un côté du semi-conducteur (1) et une anode pixélisé déposée sur un côté opposé, un pixel respectif de l'anode étant constitué d'un groupe de sous-pixels (2), et une grille anti-dispersion servant à réduire l'incidence des rayons X diffusés, la cathode (6) comportant des évidements liés à la taille des pixels anodiques (6c) pour compenser les différences d'allures des lignes de potentiel (E) du champ électrique dans le semi-conducteur (1) dues aux rayons X présentant des incidences différentes. En outre, l'invention concerne un système de tomodensitométrie (C1) comprenant un détecteur de rayons X à conversion directe (C3, C5) de l'invention.
PCT/EP2015/056367 2014-04-16 2015-03-25 Détecteur de rayons x à conversion directe et système de tomodensitométrie WO2015158509A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014207324.3 2014-04-16
DE102014207324.3A DE102014207324A1 (de) 2014-04-16 2014-04-16 Direktkonvertierender Röntgenstrahlungsdetektor und CT-System

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WO2015158509A1 true WO2015158509A1 (fr) 2015-10-22

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WO (1) WO2015158509A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10156644B2 (en) 2015-12-17 2018-12-18 Siemens Healthcare Gmbh X-ray detector with heating layer on converter material
CN115581471A (zh) * 2021-06-23 2023-01-10 西门子医疗有限公司 运行直接转换式x射线探测器的方法、x射线探测器和成像的x射线装置
CN117064422A (zh) * 2023-09-13 2023-11-17 北京富通康影科技有限公司 一种ct探测器抗散射滤线栅

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WO2008108995A1 (fr) 2007-03-01 2008-09-12 Aguila Technologies Cap de pilotage de champ électrique, électrode de pilotage et configuration modulaire pour un détecteur de rayonnement
US20110155918A1 (en) * 2009-12-30 2011-06-30 Jean-Paul Bouhnik Systems and methods for providing a shared charge in pixelated image detectors
US20110253886A1 (en) * 2010-04-19 2011-10-20 Siemens Aktiengesellschaft X-Ray Detector Comprising A Directly Converting Semiconductor Layer And Calibration Method For Such An X-Ray Detector
WO2012035466A2 (fr) 2010-09-13 2012-03-22 Koninklijke Philips Electronics N.V. Détecteur de rayonnement à électrodes directionnelles
WO2013088352A2 (fr) * 2011-12-13 2013-06-20 Koninklijke Philips Electronics N.V. Détecteur de rayonnement

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EP1779138A2 (fr) * 2004-08-12 2007-05-02 Philips Intellectual Property & Standards GmbH Grille anti-diffusion pour detecteur de rayonnement
US7260174B2 (en) * 2004-09-13 2007-08-21 General Electric Company Direct conversion energy discriminating CT detector with over-ranging correction
EP2377575B1 (fr) * 2010-04-19 2012-10-10 X-Alliance GmbH Dispositif de dosimétrie à trame
DE102011089776B4 (de) * 2011-12-23 2015-04-09 Siemens Aktiengesellschaft Detektorelement, Strahlungsdetektor, medizinisches Gerät und Verfahren zum Erzeugen eines solchen Detektorelements

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Publication number Priority date Publication date Assignee Title
WO2008108995A1 (fr) 2007-03-01 2008-09-12 Aguila Technologies Cap de pilotage de champ électrique, électrode de pilotage et configuration modulaire pour un détecteur de rayonnement
US20110155918A1 (en) * 2009-12-30 2011-06-30 Jean-Paul Bouhnik Systems and methods for providing a shared charge in pixelated image detectors
US20110253886A1 (en) * 2010-04-19 2011-10-20 Siemens Aktiengesellschaft X-Ray Detector Comprising A Directly Converting Semiconductor Layer And Calibration Method For Such An X-Ray Detector
WO2012035466A2 (fr) 2010-09-13 2012-03-22 Koninklijke Philips Electronics N.V. Détecteur de rayonnement à électrodes directionnelles
WO2013088352A2 (fr) * 2011-12-13 2013-06-20 Koninklijke Philips Electronics N.V. Détecteur de rayonnement

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10156644B2 (en) 2015-12-17 2018-12-18 Siemens Healthcare Gmbh X-ray detector with heating layer on converter material
US10684379B2 (en) 2015-12-17 2020-06-16 Siemens Healthcare Gmbh X-ray detector with heating layer on converter material
CN115581471A (zh) * 2021-06-23 2023-01-10 西门子医疗有限公司 运行直接转换式x射线探测器的方法、x射线探测器和成像的x射线装置
CN115581471B (zh) * 2021-06-23 2023-12-05 西门子医疗有限公司 运行直接转换式x射线探测器的方法、x射线探测器和成像的x射线装置
CN117064422A (zh) * 2023-09-13 2023-11-17 北京富通康影科技有限公司 一种ct探测器抗散射滤线栅

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