WO2015143821A1 - 检测光阻层阻挡能力的方法 - Google Patents
检测光阻层阻挡能力的方法 Download PDFInfo
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- WO2015143821A1 WO2015143821A1 PCT/CN2014/084507 CN2014084507W WO2015143821A1 WO 2015143821 A1 WO2015143821 A1 WO 2015143821A1 CN 2014084507 W CN2014084507 W CN 2014084507W WO 2015143821 A1 WO2015143821 A1 WO 2015143821A1
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- WIPO (PCT)
- Prior art keywords
- photoresist layer
- silicon wafer
- refractive index
- photoresist
- detecting
- Prior art date
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 167
- 238000000034 method Methods 0.000 title claims abstract description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 105
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 100
- 239000010703 silicon Substances 0.000 claims abstract description 100
- 238000005468 ion implantation Methods 0.000 claims abstract description 59
- 238000012360 testing method Methods 0.000 claims abstract description 32
- 230000000903 blocking effect Effects 0.000 claims description 36
- 238000000576 coating method Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000572 ellipsometry Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 abstract description 12
- 235000012431 wafers Nutrition 0.000 description 82
- 230000004888 barrier function Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011343 solid material Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/3115—Doping the insulating layers
- H01L21/31155—Doping the insulating layers by ion implantation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/068—Optics, miscellaneous
- G01N2201/0683—Brewster plate; polarisation controlling elements
Definitions
- the present invention relates to the field of liquid crystal display technology, and in particular, to a method for detecting the blocking capability of a photoresist layer. Background technique
- the ion implantation process is a doping technique of a semiconductor material, which means that after the ion beam is irradiated onto the solid material, the velocity is gradually reduced by the resistance of the solid material, and finally stays in the solid material.
- the ion implantation process has the advantages of low temperature doping, easy masking, precise dose control, and high uniformity. Furthermore, it can be used in a plurality of process steps, such as source-drain doping, channel doping, light doping, drain doping, etc., so that the fabricated semiconductor device has high speed, low power consumption, and good stability. , high yield and other characteristics. In different ion implantation processes, the energy and dose requirements of the desired ion beam are different.
- the photoresist barrier layer is the most commonly used, referred to as the photoresist layer.
- the photoresist layers of different thicknesses have different barrier abilities to ion implantation. Too thin a thickness makes ions easily penetrate the photoresist layer, while a too thick photoresist layer is difficult to control critical dimensions during photolithography.
- a photoresist layer having a suitable thickness is used for ion implantation.
- a method for determining the blocking capability of a photoresist layer includes the step flow shown in FIG. Specifically, it includes the following steps: Step S101: Providing a plurality of test silicon wafers, the photoresist layer for each region needs a test silicon wafer because it is required to judge the blocking ability of the photoresist layer for a plurality of regions.
- Step S102 coating different thicknesses of the photoresist layer on different test silicon wafers
- Step S103 measuring the thickness of the photoresist layer on each test silicon wafer
- Step S104 Determining the ion implantation of energy onto the silicon wafer coated with the photoresist layer of different thickness
- step S105 removing the photoresist layer of each silicon wafer
- step S106 testing each silicon wafer by secondary ion mass spectrometry to obtain The amount of ions in each silicon wafer.
- the thickness of the photoresist layer applied to the silicon wafer is appropriate, otherwise the thickness of the photoresist layer applied to the silicon wafer is considered to be inappropriate.
- at least a plurality of test wafers are required to perform the above operation, and then the amount of ions on the silicon wafer is measured one by one.
- This method has the following disadvantages: On the one hand, it consumes a large amount of test silicon wafers, because the manufacturing cost of the test silicon wafer is high, the detection cost of the photoresist layer is too high; on the other hand, the secondary ion mass spectrometry is very expensive.
- the test method the test sample is complicated to make, and it takes a lot of test time, which greatly increases the evaluation cost and time. Summary of the invention
- a method of detecting a blocking capability of a photoresist layer comprising:
- the refractive index of different regions on the surface of the silicon wafer where different thicknesses of the photoresist layer are located after ion implantation is tested, and the initial refractive index before ion implantation is combined to determine the blocking capability of the photoresist layers of different thicknesses.
- the step of forming a photoresist layer having a different thickness on the surface of the silicon wafer comprises the steps of:
- a photoresist is coated on the surface of the silicon wafer to form a photoresist layer.
- the step of forming a photoresist layer having a different thickness on the surface of the silicon wafer further comprises the steps of:
- the photoresist layers coated on different regions of the surface of the wafer are exposed and developed at different exposure times to obtain photoresist layers having different thicknesses.
- the step of forming a photoresist layer having a different thickness on the surface of the silicon wafer further comprises the steps of:
- the thickness of the photoresist layer on the different regions is measured.
- the silicon wafer is further introduced. Drying before the line.
- the pre-baking treatment has a temperature of 10-150 ° C and a time of 10-300 s.
- the pre-baking process is performed by low temperature heating provided by an infrared oven.
- the thickness of the photoresist layer ranges from the center of the wafer surface to its edge.
- the predetermined amount includes a predetermined energy and dose.
- the refractive index of the surface of the wafer before and after ion implantation is determined by ellipsometry. In some embodiments, the test conditions for the refractive index before and after ion implantation are the same as in the environment. In some embodiments, after the step of testing the refractive index of the surface of the silicon wafer after ion implantation, the method further comprises:
- the thickness of the photoresist layer having the smallest absolute value of the difference in refractive index of the surface of the wafer before and after ion implantation is selected from all effective photoresist layer thicknesses as the optimum photoresist layer thickness.
- the absolute value of the refractive index difference is greater than 0.02, it is determined that the photoresist layer of the corresponding thickness does not act as a barrier.
- FIG. 1 is a flow chart showing the steps of a method for determining the blocking capability of a photoresist layer in the prior art
- FIG. 2 is a flow chart showing the steps of a method of detecting the blocking capability of a photoresist layer in accordance with an embodiment of the present invention. detailed description
- the principle of ion implantation is that an atom or a molecule undergoes ionization to form an ion, that is, a plasma, which has a certain amount of electric charge.
- the ions can be accelerated by the electric field, and the direction of motion is changed by the magnetic field to form an ion beam, so that the ions can be controlled to enter the inside of the silicon wafer with a certain energy to achieve the purpose of doping.
- ions When ions are implanted into the silicon wafer, they collide with the silicon atoms to lose energy, and the energy-depleted ions stop at a certain position in the silicon wafer.
- the ions transfer energy to the silicon atoms through collision with the silicon atoms, and the silicon atoms become new incident particles, which in turn collide with other silicon atoms to form a chain reaction.
- a method of detecting the blocking capability of a photoresist layer is provided.
- the method can at least partially realize the detection of the photoresist layer blocking ability on the surface of the silicon wafer, and finally obtain the optimum photoresist layer thickness, so as to achieve a good blocking effect after ion implantation.
- FIG. 2 An example of the flow of steps of the above method is shown in FIG. 2. It is to be understood that the embodiments of the invention, which are capable of carrying out the invention, are intended to be within the scope of the invention, and are not limited to the specific steps shown in FIG. In other words, the method steps shown in Fig. 2 are only one example, and all the embodiments of the present invention do not necessarily have to include these steps, and may include only a part of them or core steps.
- a method of detecting a barrier property of a photoresist layer includes: providing a silicon wafer and measuring a refractive index of a surface of the silicon wafer as an initial refractive index of the surface of the silicon wafer; Forming a photoresist layer having different thicknesses on the surface; performing ion implantation on the photoresist layer at a predetermined amount; stripping the photoresist layer on the surface of the silicon wafer; testing the surface of the silicon wafer on which the photoresist layer of different thickness is located after ion implantation
- the refractive index of different regions combined with the initial refractive index before ion implantation, determines the blocking ability of the photoresist layers of different thicknesses.
- the method shown in Figure 2 specifically includes the following steps:
- Step S201 providing a silicon wafer and measuring a refractive index of the surface of the silicon wafer as an initial refractive index of the surface of the silicon wafer;
- Step S202 coating a photoresist on the surface of the silicon wafer to form a photoresist layer
- Step S203 exposing and developing the photoresist layer on different regions of the surface of the silicon wafer with different exposure times to obtain photoresist layers having different thicknesses
- Step S204 measuring a thickness of the photoresist layer on the different regions
- Step S205 performing ion implantation on the photoresist layer with a preset amount
- Step S206 peeling off the photoresist layer on the surface of the silicon wafer
- Step S207 testing the refractive index of different regions of the surface of the silicon wafer after peeling off the photoresist layer, and comparing it with the initial refractive index value, thereby judging the blocking ability of the photoresist layer of different thicknesses. On this basis, the optimum photoresist layer thickness suitable for ion implantation at the predetermined amount can be determined.
- the solution of the present invention only needs one silicon wafer, because exposure can be performed on different regions of the surface of the silicon wafer at different exposure times. A photoresist layer having a different thickness is obtained. After that, by comparing the refractive index changes of different regions of the surface of the silicon wafer before and after ion implantation, it is possible to determine the blocking ability of the photoresist layers of different thicknesses coated on the different regions, thereby finding the optimum photoresist layer thickness. Thereby effectively saving evaluation time and cost.
- step S201 a clean silicon wafer is first provided, and the refractive index of the surface of the silicon wafer before ion implantation is measured to obtain an initial refractive index of the surface of the silicon wafer.
- step S202 a layer of photoresist is coated on the surface of the silicon wafer, and then the photoresist on the silicon wafer is pre-baked.
- the prebaking treatment has a temperature of 10-150 ° C and a time of 10-300 s.
- the purpose of the pre-baking treatment is to promote the volatilization of the solvent in the photoresist film which has been applied to the surface of the silicon wafer to increase the adhesion of the photoresist film to the surface of the silicon wafer.
- the pre-baking treatment is carried out by heating in an infrared oven at a low temperature to be in a state of being dry and not hardened.
- the photoresist in the photoresist film can still undergo a chemical reaction during exposure.
- the solvent in the photoresist layer is evaporated by the pre-baking treatment to increase the adhesion, and the sensitivity of the photoresist layer and the subsequent line width are controlled, and the internal stress of the residue in the photoresist layer is also released.
- step S203 exposure and development are performed, but the photoresist layers coated on different regions of the surface of the silicon wafer are exposed and developed at different exposure times to obtain photoresist layers having different thicknesses.
- the photoresist is coated on the surface of the silicon wafer in a liquid form, and after exposure, it is in a solid form, so as to protect the photoresist at the subsequent ion implantation process.
- exposure is selected using different exposure times in order to obtain different thicknesses of the photoresist layer in different regions on the surface of the silicon wafer. Specifically, the longer the exposure time of the photoresist layer, the smaller the thickness of the photoresist layer obtained after development. The reason for this is that different exposure times cause a change in the solubility of the photoresist in the developer, so that the thickness of the finally obtained photoresist layer is different.
- the thickness variation of the photoresist layer is measured from the center to the edge of the surface of the silicon wafer in the subsequent step S204 to measure the thickness of the photoresist layer on different regions on the surface of the silicon wafer, and recorded, for example, sequentially recorded
- the thickness of the lower photoresist layer is used to calculate the blocking ability corresponding to each thickness of the photoresist layer.
- ion implantation is performed on the photoresist layer by a predetermined amount in step S205, wherein the preset amount in the embodiment includes the preset energy and the dose.
- the energy and the dose size are selected according to the specifications of the ion implantation apparatus.
- the ion implantation equipment of the commonly used specifications has an ion energy range of 0 to 100 kV, and a dose range of 0 to le 16 / cm 3 .
- step S206 is performed to peel off the photoresist layer on the silicon wafer.
- step S207 is performed to test the refractive indices of different regions of the surface of the silicon wafer corresponding to the different thickness photoresist layers.
- the initial refractive index value measured before ion implantation is combined to determine the blocking ability of the photoresist layers of different thicknesses. Based on this, it is also possible to determine the optimum photoresist layer thickness suitable for ion implantation. Its specific includes:
- the difference between the refractive index of different regions of the surface of the silicon wafer corresponding to the different thickness photoresist layers after ion implantation and the initial refractive index measured before ion implantation is calculated. If the absolute value of the refractive index difference ranges from 0 to 0.02 (ie, the range is -0.02 to +0.02), it is determined that the corresponding thickness of the photoresist layer can effectively block, and the thickness is suitable or effective. The thickness of the photoresist layer. In addition, the thickness of the photoresist layer having the smallest absolute value of the refractive index difference of the surface of the silicon wafer before and after ion implantation can be selected from the thickness of all effective photoresist layers as the optimum photoresist layer thickness.
- the thickness of the photoresist layer having a refractive index difference closest to zero is selected from all suitable photoresist layer thicknesses as the optimum photoresist layer thickness. If the absolute value of the refractive index difference is greater than 0.02, it is determined that the photoresist layer of the corresponding thickness does not function as a barrier. It should be noted that the width of the refractive index difference range here is 0.02, which is an empirical value. In addition, the test will be due to system errors or test equipment and other factors. The effect caused a small error between the two tests and therefore did not have a significant effect on the refractive index difference.
- the initial refractive index before ion implantation is nl
- the refractive indices of different regions of the surface of the silicon wafer corresponding to the different thickness photoresist layers after ion implantation are respectively, the refractive index of the region where the photoresist layer having the thickness dl is n 2
- the refractive index of the region where the photoresist layer of the thickness d2 is located is n3
- the region where the photoresist layer having the thickness dl is calculated is between the refractive index after ion implantation and the initial refractive index before ion implantation.
- the difference a l n l-n2. in case
- the photoresist layer of thickness dl can serve as a barrier to the thickness of the suitable photoresist layer. If al>+0.02 or al ⁇ -0.02, the photoresist layer of thickness dl does not act as a barrier. Similarly, for the thickness d2, the area of the surface of the silicon wafer where the d3 photoresist layer is located is similarly calculated as the refractive index difference, as long as the refractive index difference satisfies
- photoresist layers having such thickness are suitable or effective photoresist layers.
- the thickness of the photoresist layer with the refractive index difference closest to 0 is selected from all suitable photoresist layers as the optimum photoresist layer thickness.
- test results provided by the present embodiment are more accurate.
- the refractive index is a material-specific parameter, different injection effects result in a very sensitive change in refractive index, and the numerical comparison is fixed and accurate; the second is by testing before and after ion implantation. The difference in refractive index twice can be subtracted from the error introduced by the silicon wafer material itself.
- the method for testing the refractive index of the surface of the silicon wafer before and after ion implantation in this embodiment is an ellipsic polarization method, which uses an elliptically polarized beam to project the surface of the silicon wafer to observe the change of the polarization state of the reflected beam. Thereby determining the film thickness and refractive index on the silicon wafer.
- the ellipsometry method is the one that measures the thinnest film and the highest measurement accuracy, and has a wide range of applications, and is also widely used in the semiconductor industry, metal industry, and biology.
- test conditions and the environment of the refractive index before and after ion implantation are substantially the same. Only when the refractive index is tested before and after ion implantation under substantially the same test conditions and environment can the refractive index change be ensured (ie, for ion implantation).
- the blocking ability is caused by the thickness variation of the photoresist layer.
- the method for detecting the blocking capability of the photoresist layer can only evaluate the blocking of ion implantation by different thickness of the photoresist layer on the one hand only one silicon wafer is needed.
- the ability to avoid multiple coatings of different thicknesses of photoresist with multiple test wafers saves material costs.
- the refractive index of the surface of the silicon wafer is increased. By comparing the refractive index changes of the surface of the silicon wafer before and after ion implantation, it can be judged whether the photoresist layer is It can effectively block the thickness of the photoresist layer.
- This approach avoids the use of secondary ion mass spectrometry in the prior art, which is expensive and time consuming to test. Therefore, the method of the present invention greatly reduces the test cost and time and shortens the detection period.
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Priority Applications (1)
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US14/434,187 US9389173B2 (en) | 2014-03-24 | 2014-08-15 | Method for detecting resistance of a photo resist layer |
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CN201410109564.9A CN103887200A (zh) | 2014-03-24 | 2014-03-24 | 一种检测光阻层阻挡能力的方法 |
CN201410109564.9 | 2014-03-24 |
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CN103887200A (zh) * | 2014-03-24 | 2014-06-25 | 京东方科技集团股份有限公司 | 一种检测光阻层阻挡能力的方法 |
CN105097594B (zh) * | 2015-07-29 | 2018-10-16 | 上海华力微电子有限公司 | 离子注入层光刻胶膜厚的优化方法 |
CN108063100B (zh) * | 2017-12-08 | 2021-04-27 | 绍兴奥美电子科技有限公司 | 光刻胶去除工艺的测试方法 |
CN111933545B (zh) * | 2020-09-09 | 2020-12-22 | 南京晶驱集成电路有限公司 | 一种光阻层阻挡能力的检测方法及检测系统 |
CN117549205B (zh) * | 2024-01-11 | 2024-04-02 | 东晶电子金华有限公司 | 一种石英晶片的抛光方法 |
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2014
- 2014-03-24 CN CN201410109564.9A patent/CN103887200A/zh active Pending
- 2014-08-15 WO PCT/CN2014/084507 patent/WO2015143821A1/zh active Application Filing
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