WO2015141117A1 - 無線装置 - Google Patents
無線装置 Download PDFInfo
- Publication number
- WO2015141117A1 WO2015141117A1 PCT/JP2015/000513 JP2015000513W WO2015141117A1 WO 2015141117 A1 WO2015141117 A1 WO 2015141117A1 JP 2015000513 W JP2015000513 W JP 2015000513W WO 2015141117 A1 WO2015141117 A1 WO 2015141117A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- circuit
- radiation conductor
- impedance conversion
- power
- conversion circuit
- Prior art date
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- 239000004020 conductor Substances 0.000 claims abstract description 111
- 230000005855 radiation Effects 0.000 claims abstract description 100
- 238000006243 chemical reaction Methods 0.000 claims abstract description 73
- 238000010586 diagram Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
- H04B1/18—Input circuits, e.g. for coupling to an antenna or a transmission line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/28—Impedance matching networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/225—Supports; Mounting means by structural association with other equipment or articles used in level-measurement devices, e.g. for level gauge measurement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/444—Diode used as protection means in an amplifier, e.g. as a limiter or as a switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/66—Clipping circuitry being present in an amplifier, i.e. the shape of the signal being modified
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04Q—SELECTING
- H04Q9/00—Arrangements in telecontrol or telemetry systems for selectively calling a substation from a main station, in which substation desired apparatus is selected for applying a control signal thereto or for obtaining measured values therefrom
Definitions
- the present invention relates to a wireless device connected to a flow rate measuring device that measures the flow rate of an object to be weighed.
- an automatic meter reading system in which the amount of gas, electricity, water, or the like is measured by a flow rate measuring device installed in a building such as a house and the measured data is collected by wireless communication.
- a flow rate measuring device installed in a building such as a house and the measured data is collected by wireless communication.
- Such an automatic meter-reading system includes a wireless adapter slave unit attached to the surface of a metal casing of a flow meter such as a gas meter, and a wireless master unit for wirelessly communicating with the wireless adapter slave unit and transmitting a communication signal to a center device. Equipped with a machine.
- a wireless circuit in which a wireless component is not damaged or destroyed by a signal received from a radiation conductor (for example, a patent).
- a circuit configured to prevent a signal received from a radiation conductor of a predetermined level or more from being input to the wireless component side is connected between the radiation conductor and the wireless component.
- this power limit level is uniquely determined by the voltage V f and the impedance Z.
- the voltage V f is determined by the characteristics of the diodes. Since there are variations in individual diodes, the voltage V f varies, and as a result, the power limit level also varies. End up.
- the present invention has been made in view of such a conventional problem, and provides a radio apparatus having an input power limiting circuit capable of arbitrarily changing a power level input from a radiation conductor.
- the wireless device of the present invention includes a radiation conductor that radiates radio waves including a high-frequency signal, a power limiting circuit, and a high-frequency IC.
- the power limiting circuit includes a radiation conductor side impedance conversion circuit, a radio circuit side impedance conversion circuit, a radiation conductor side power clipping diode, and a radio circuit side power clipping diode. Further, a radiation conductor side impedance conversion circuit and a radio circuit side impedance conversion circuit are connected between the radiation conductor and the high frequency IC. Furthermore, the radiation conductor side power clipping diode and the radio circuit side power clipping diode are connected in parallel between the radiation conductor side impedance conversion circuit and the radio circuit side impedance conversion circuit.
- the impedance of the diode circuit can be arbitrarily changed by the impedance conversion circuit.
- the power limiter of the power limiter circuit can be arbitrarily switched, and the power input to the radio component can be suppressed below the absolute maximum rated power of the radio component, thereby preventing the radio component from being destroyed.
- FIG. 1 is a diagram showing a configuration of a radio apparatus according to the first embodiment of the present invention.
- FIG. 2 is a diagram illustrating an installation example of the wireless device according to the first embodiment of the present invention.
- FIG. 3 is a diagram showing a configuration of a radio circuit according to the second embodiment of the present invention.
- FIG. 1 is a diagram illustrating a configuration of a radio apparatus 100 according to the first embodiment of the present invention
- FIG. 2 is a diagram illustrating an installation example of the radio apparatus 100 according to the first embodiment of the present invention. It is.
- the radio apparatus 100 includes a radiating conductor 101, a power limiting circuit 108, and a high frequency IC 106 as shown in FIG.
- the power limiting circuit 108 and the high frequency IC 106 are mounted on the wireless board 107.
- the power limiting circuit 108 includes a radiation conductor side impedance conversion circuit 102, a radio circuit side impedance conversion circuit 105, a radiation conductor side power clipping diode 103, and a radio circuit side power clipping diode 104.
- the flow rate measuring device 200 and the flow rate measuring device 250 are installed adjacent to each other in close proximity.
- a wireless housing 201 is installed on the front surface of each of the flow measuring device 200 and the flow measuring device 250, and a wireless substrate 107 is built in the wireless housing 201.
- the flow rate measuring device 200 and the flow rate measuring device 250 are installed close to each other.
- the flow rate measuring device 250 is in a transmitting state, and at the same time, the flow measuring device 200 is in a receiving state.
- a high-power transmission signal output from the radiation conductor 101 on the flow measuring device 250 side is input to the radiation conductor 101 on the flow measuring device 200 side and input to the high-frequency IC 106 on the flow measuring device 200 side as it is. .
- the power limiting circuit 108 is not provided, the high output signal is input to the high frequency IC 106 as it is. Therefore, if the input signal power exceeds the absolute maximum rated power of the wireless IC, the high frequency IC 106 can be destroyed. High nature.
- radio apparatus 100 since radio apparatus 100 has power limiting circuit 108, the high power of the input power signal is limited, and a small power signal is input to high-frequency IC 106. Does not happen.
- the power limiting circuit 108 is arranged outside the radiating conductor side power clipping diode 103 and the radio circuit side power clipping diode 104 (on the side opposite to the diode in parallel), and on the radiating conductor side impedance converting circuit 102 and the radio circuit side impedance converting circuit 105. Is connected. That is, the radiation conductor side impedance conversion circuit 102 is connected to the radiation conductor 101 side of the radiation conductor side power clipping diode 103, and the radio circuit side impedance conversion circuit 105 is connected to the high frequency IC 106 side of the radio circuit side power clipping diode 104. .
- the circuit impedances of the radiation conductor side power clipping diode 103 and the radio circuit side power clipping diode 104 can be changed, and the power limit level can be arbitrarily adjusted.
- radio apparatus 100 of the present embodiment when the output of the radiation conductor is high and when two or more radio circuits are installed close to each other, they are input from radiation conductor 101. Even if the power exceeds the absolute maximum power rating of the wireless component, the wireless component can be prevented from being destroyed.
- FIG. 3 is a diagram illustrating a configuration of a wireless device 300 according to the second embodiment of the present invention.
- the radio apparatus 300 includes a first radiating conductor 301, a second radiating conductor 302, a first power limiting circuit 320, a second power limiting circuit 330, a first high frequency IC 311, 2 high frequency IC 312 and main microcomputer 313 are provided.
- the first power limiting circuit 320 includes a first radiation conductor side impedance conversion circuit 303, a first radio circuit side impedance conversion circuit 309, a first radiation conductor side power clipping diode 305, and a first radio circuit side power clipping diode 306. It has.
- the second power limiting circuit 330 includes a second radiation conductor side impedance conversion circuit 304, a second radio circuit side impedance conversion circuit 310, a second radiation conductor side power clipping diode 307, and a second radio circuit side power clipping diode. 308 is provided.
- the first power limiting circuit 320 is connected to the first radiation conductor side impedance conversion circuit 303 outside the first radiation conductor side power clipping diode 305 and the first radio circuit side power clipping diode 306 (on the opposite side to the diode in parallel). And the 1st radio
- the circuit impedances of the first radiation conductor side power clipping diode 305 and the first radio circuit side power clipping diode 306 can be changed, and the power limit level to the first high frequency IC 311 is arbitrarily adjusted. be able to.
- the second power limiting circuit 330 is arranged outside the second radiation conductor side power clipping diode 307 and the second radio circuit side power clipping diode 308 (on the side opposite to the diode in parallel), on the second radiation conductor side impedance conversion circuit 304.
- wireless circuit side impedance conversion circuit 310 is connected. That is, the second radiation conductor side impedance conversion circuit 304 is connected to the second radiation conductor 302 side of the second radiation conductor side power clipping diode 307 and the second radio circuit side power clipping diode 308 is connected to the second high frequency IC 312 side.
- a radio circuit side impedance conversion circuit 310 is connected.
- the circuit impedances of the second radiation conductor side power clipping diode 307 and the second radio circuit side power clipping diode 308 can be changed, and the power limit level to the second high frequency IC 312 can be arbitrarily adjusted. it can.
- the first radiating conductor 301 and the second radiating conductor 302 are installed close to each other, for example, the first high frequency IC 311 transmits, and at the same time, the second high frequency IC 312 is in a receiving state. Assuming that At this time, a high-power transmission signal output from the first radiation conductor 301 is input to the second radiation conductor 302. If the second power limiting circuit 330 is not provided, the high output signal is input to the second high frequency IC 312 as it is. Therefore, when the input signal power exceeds the absolute maximum rated power of the wireless IC, The high frequency IC 312 is highly likely to be destroyed.
- the second power limiting circuit 330 since the second power limiting circuit 330 exists, the power of the input high power signal is limited and is input to the second high frequency IC 312 as a small power signal, so that no destruction or the like occurs. .
- the second high frequency IC 312 transmits and the first high frequency IC 311 is in the receiving state at the same time, the power of the input high power signal is limited because the first power limiting circuit 320 exists. Since it is input to the first high frequency IC 311 as a small power signal, no destruction or the like occurs.
- the power limiting circuit of this embodiment is effective because it has a high possibility of owning a plurality of radiation conductors and simultaneously performing transmission and reception.
- the wireless device 100 includes the radiation conductor 101 that radiates a radio wave including a high-frequency signal, the power limiting circuit 108, and the high-frequency IC 106.
- the power limiting circuit 108 includes a radiation conductor side impedance conversion circuit 102, a radio circuit side impedance conversion circuit 105, a radiation conductor side power clipping diode 103, and a radio circuit side power clipping diode 104.
- the radiation conductor side impedance conversion circuit 102 and the radio circuit side impedance conversion circuit 105 are connected between the radiation conductor 101 and the high frequency IC 106.
- a radiation conductor side power clipping diode 103 and a radio circuit side power clipping diode 104 are connected in parallel between the radiation conductor side impedance conversion circuit 102 and the radio circuit side impedance conversion circuit 105.
- the wireless device 300 includes a first radiating conductor 301 and a second radiating conductor 302, a first power limiting circuit 320, and a second power limiting circuit 330 that radiate radio waves including high-frequency signals.
- the first high frequency IC 311 and the second high frequency IC 312 are provided.
- the first power limiting circuit 320 includes a first radiation conductor side impedance conversion circuit 303, a first radio circuit side impedance conversion circuit 309, a first radiation conductor side power clipping diode 305, and a first radio circuit side power clipping. And a diode 306.
- the second power limiting circuit 330 includes a second radiation conductor side impedance conversion circuit 304, a second radio circuit side impedance conversion circuit 310, a second radiation conductor side power clipping diode 307, and a second radio circuit side power clipping diode 308. And have.
- a first radiation conductor side impedance conversion circuit 303 and a first radio circuit side impedance conversion circuit 309 are connected between the first radiation conductor 301 and the first high frequency IC 311. Between the first radiation conductor side impedance conversion circuit 303 and the first radio circuit side impedance conversion circuit 309, a first radiation conductor side power clipping diode 305 and a first radio circuit side power clipping diode 306 are connected in parallel.
- the second radiation conductor side impedance conversion circuit 304 and the second radio circuit side impedance conversion circuit 310 are connected between the second radiation conductor 302 and the second high frequency IC 312.
- a second radiation conductor side power clipping diode 307 and a second radio circuit side power clipping diode 308 are connected in parallel between the second radiation conductor side impedance conversion circuit 304 and the second radio circuit side impedance conversion circuit 310.
- the present invention is useful as a wireless device connected to a flow rate measuring device that measures the flow rate of an object to be measured, in particular, as a wireless device that improves the strong input characteristics.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Transmitters (AREA)
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
- Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
Abstract
Description
図1は、本発明の第1の実施の形態に係る無線装置100の構成を示す図であり、図2は、本発明の第1の実施の形態に係る無線装置100の設置例を示す図である。
次に、本発明の第2の実施の形態について説明する。
101 放射導体
102 放射導体側インピーダンス変換回路
103 放射導体側電力クリッピングダイオード
104 無線回路側電力クリッピングダイオード
105 無線回路側インピーダンス変換回路
106 高周波IC
107 無線基板
108 電力制限回路
200,250 流量計測装置
201 無線筐体
301 第1放射導体
302 第2放射導体
303 第1放射導体側インピーダンス変換回路
304 第2放射導体側インピーダンス変換回路
305 第1放射導体側電力クリッピングダイオード
306 第1無線回路側電力クリッピングダイオード
307 第2放射導体側電力クリッピングダイオード
308 第2無線回路側電力クリッピングダイオード
309 第1無線回路側インピーダンス変換回路
310 第2無線回路側インピーダンス変換回路
311 第1高周波IC
312 第2高周波IC
313 メインマイコン
320 第1電力制限回路
330 第2電力制限回路
340 無線基板
Claims (2)
- 高周波信号を含む電波を放射する放射導体と、
電力制限回路と、
高周波ICとを備え、
前記電力制限回路は、
放射導体側インピーダンス変換回路と、
無線回路側インピーダンス変換回路と、
放射導体側電力クリッピングダイオードと、
無線回路側電力クリッピングダイオードとを有し、
前記放射導体と前記高周波ICとの間に、前記放射導体側インピーダンス変換回路および前記無線回路側インピーダンス変換回路が接続され、
前記放射導体側インピーダンス変換回路および前記無線回路側インピーダンス変換回路の間に、前記放射導体側電力クリッピングダイオードおよび前記無線回路側電力クリッピングダイオードが並列接続される、
無線装置。 - 高周波信号を含む電波を放射する、第1放射導体、および第2放射導体と、
第1電力制限回路、および第2電力制限回路と、
第1高周波IC、および第2高周波ICとを備え、
前記第1電力制限回路は、
第1放射導体側インピーダンス変換回路と、
第1無線回路側インピーダンス変換回路と、
第1放射導体側電力クリッピングダイオードと、
第1無線回路側電力クリッピングダイオードとを有し、
前記第2電力制限回路は、
第2放射導体側インピーダンス変換回路と、
第2無線回路側インピーダンス変換回路と、
第2放射導体側電力クリッピングダイオードと、
第2無線回路側電力クリッピングダイオードとを有し、
前記第1放射導体と第1高周波ICとの間に、前記第1放射導体側インピーダンス変換回路および前記第1無線回路側インピーダンス変換回路が接続され、
前記第1放射導体側インピーダンス変換回路と前記第1無線回路側インピーダンス変換回路との間に、前記第1放射導体側電力クリッピングダイオードおよび前記第1無線回路側電力クリッピングダイオードが並列接続され、
前記第2放射導体と第2高周波ICとの間に、前記第2放射導体側インピーダンス変換回路および前記第2無線回路側インピーダンス変換回路が接続され、
前記第2放射導体側インピーダンス変換回路と前記第2無線回路側インピーダンス変換回路との間に、前記第2放射導体側電力クリッピングダイオードおよび前記第2無線回路側電力クリッピングダイオードが並列接続される、
無線装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016508478A JPWO2015141117A1 (ja) | 2014-03-17 | 2015-02-05 | 無線装置 |
CN201580013239.5A CN106105045A (zh) | 2014-03-17 | 2015-02-05 | 无线装置 |
EP15765380.9A EP3121969A4 (en) | 2014-03-17 | 2015-02-05 | Wireless apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014053070 | 2014-03-17 | ||
JP2014-053070 | 2014-03-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015141117A1 true WO2015141117A1 (ja) | 2015-09-24 |
Family
ID=54144109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/000513 WO2015141117A1 (ja) | 2014-03-17 | 2015-02-05 | 無線装置 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP3121969A4 (ja) |
JP (1) | JPWO2015141117A1 (ja) |
CN (1) | CN106105045A (ja) |
WO (1) | WO2015141117A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020105250A1 (ja) * | 2018-11-22 | 2020-05-28 | アズビル株式会社 | 無線センサ |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0736548U (ja) * | 1993-11-26 | 1995-07-04 | 日新電機株式会社 | 電気機器用異常監視装置 |
JPH08138572A (ja) * | 1994-11-08 | 1996-05-31 | Mitsubishi Electric Corp | コマエラー補正装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3587017A (en) * | 1966-11-29 | 1971-06-22 | Fujitsu Ltd | Overvoltage protecting arrangement for an rf amplifier |
DE10357665A1 (de) * | 2003-01-10 | 2004-07-22 | Atmel Germany Gmbh | Schaltungsanordnung zur Bereitstellung elektrischer Leistung aus einem elektromagnetischen Feld |
EP2371001A1 (en) * | 2008-12-21 | 2011-10-05 | Laird Technologies AB | Antenna assemblies for use with portable communications devices |
US8903332B2 (en) * | 2009-06-23 | 2014-12-02 | Silicon Laboratories Inc. | Circuit device and method of coupling to an antenna |
-
2015
- 2015-02-05 JP JP2016508478A patent/JPWO2015141117A1/ja active Pending
- 2015-02-05 WO PCT/JP2015/000513 patent/WO2015141117A1/ja active Application Filing
- 2015-02-05 CN CN201580013239.5A patent/CN106105045A/zh active Pending
- 2015-02-05 EP EP15765380.9A patent/EP3121969A4/en not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0736548U (ja) * | 1993-11-26 | 1995-07-04 | 日新電機株式会社 | 電気機器用異常監視装置 |
JPH08138572A (ja) * | 1994-11-08 | 1996-05-31 | Mitsubishi Electric Corp | コマエラー補正装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP3121969A4 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020105250A1 (ja) * | 2018-11-22 | 2020-05-28 | アズビル株式会社 | 無線センサ |
JP2020086861A (ja) * | 2018-11-22 | 2020-06-04 | アズビル株式会社 | 無線センサ |
Also Published As
Publication number | Publication date |
---|---|
EP3121969A4 (en) | 2017-03-22 |
CN106105045A (zh) | 2016-11-09 |
JPWO2015141117A1 (ja) | 2017-04-06 |
EP3121969A1 (en) | 2017-01-25 |
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