WO2015133446A1 - Crimp head, and mounting device and mounting method using same - Google Patents

Crimp head, and mounting device and mounting method using same Download PDF

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Publication number
WO2015133446A1
WO2015133446A1 PCT/JP2015/056138 JP2015056138W WO2015133446A1 WO 2015133446 A1 WO2015133446 A1 WO 2015133446A1 JP 2015056138 W JP2015056138 W JP 2015056138W WO 2015133446 A1 WO2015133446 A1 WO 2015133446A1
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Prior art keywords
head
substrate
pressing
mounting
crimping
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PCT/JP2015/056138
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French (fr)
Japanese (ja)
Inventor
昇 朝日
芳範 宮本
敏史 竹上
将次 仁村
Original Assignee
東レ株式会社
東レエンジニアリング株式会社
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Application filed by 東レ株式会社, 東レエンジニアリング株式会社 filed Critical 東レ株式会社
Priority to KR1020167027065A priority Critical patent/KR20160127807A/en
Publication of WO2015133446A1 publication Critical patent/WO2015133446A1/en

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    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
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    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Definitions

  • the present invention adheres to a circuit board such as a flexible substrate, a glass epoxy substrate, a glass substrate, a ceramic substrate, a silicon interposer, or a silicon substrate, and directly bonds or laminates a semiconductor device such as an IC or LSI or other electronic components.
  • the present invention relates to a crimping head for mounting in a state, a mounting apparatus using the same, and a mounting method.
  • flip-chip mounting is a method for mounting electronic components on circuit boards, and three-dimensional stacking is performed three-dimensionally with through electrodes that penetrate the electronic components. Stacked packaging is spreading rapidly. Therefore, it is important to ensure the reliability of bonding in mounting.
  • liquid sealing is performed in the gap between the semiconductor chip and the circuit board. It is a common method to inject and cure the adhesive.
  • a method has been proposed in which a semiconductor chip or a substrate with a bump on which an adhesive has been formed in advance is flip-chip connected to perform electrical bonding and resin sealing at the same time.
  • a substrate on which a semiconductor device is temporarily mounted via an insulating adhesive is placed on a substrate holding plate that is spring-biased upward from the lower die and separated from the lower die, and the upper die with a built-in heater is used as the substrate. Proximity to face. In this state, the substrate is preheated by radiant heat from the upper die, and then the upper die is lowered to fix the semiconductor device to the substrate while pressing and heating (see Patent Document 1).
  • the semiconductor chip height is absorbed to uniformly apply pressure to all the semiconductor chips.
  • a cavity for storing a plurality of heating and pressing tools that simultaneously press a plurality of semiconductor chips is formed in the heating and pressing head, and an elastic body is inserted into the proximal end side of the cavity to heat the cavity.
  • the pressure tool is elastically supported in the pressure heating head (see Patent Document 2).
  • the elastic body interposed between the heating and pressing head and the heating and pressing tool has a thickness that takes into account the elastic deformation to absorb the variation in the height of the semiconductor chip, and heat transfer to the semiconductor chip is hindered. Yes. As a result, there is a disadvantage that heat transfer is delayed and heat loss is caused. Such an inconvenience is not limited to the semiconductor chip, but can also occur when mounting other electronic components. In this case, when the temperature of the heater is increased or the solder bump is used, there is a problem that the adhesive is cured before the solder is melted, resulting in poor connection.
  • the present invention has been made in view of such circumstances, and applies an appropriate pressure to the electronic component to absorb the height variation of the electronic component to prevent breakage and to accelerate heat transfer to the electronic component.
  • the main object of the present invention is to provide a crimping head capable of reliably connecting a bump of an electronic component and a substrate electrode and conducting heat conduction in a short time, and a mounting apparatus and mounting method using the same.
  • This invention has the following configuration in order to achieve such an object.
  • a crimping head for mounting electronic components on a substrate, The head body, A pressing member attached to a lower portion of the head body and pressing an electronic component; An elastic member interposed between the head main body and the pressing member and having a plurality of surfaces divided at a predetermined interval and abutting against at least one surface of the head main body and the pressing member.
  • the elastic member interposed between the crimping head and the pressing member is in contact with at least one of the pressing member and the crimping head through a small-area divided portion. For this reason, when the pressing at the time of crimping acts on the pressing member, each of the divided portions elastically deforms in a substantially radial manner while expanding the area toward the space formed between the adjacent divided portions. That is, the elastic member abutted with a smaller area than the pressing member can be elastically deformed while efficiently expanding the area in a direction orthogonal to the pressing force. Therefore, even if the thickness of the elastic member is reduced, the cushioning property due to elastic deformation can be improved.
  • the crimping head includes, for example, a plurality of pressing members that simultaneously press a plurality of electronic components, An elastic member having a plurality of surfaces may be interposed for each pressing member.
  • the elastic member may be formed of an elastic sheet having a convex surface divided into a plurality of sides on one side of one elastic sheet.
  • the elastic member may be configured by arranging a plurality of elastic members between the head main body and the pressing member at predetermined intervals.
  • the structure provided with the heater embedded at the head main body may be sufficient.
  • all of the plurality of electronic components can be thermocompression bonded simultaneously and evenly on the substrate.
  • the present invention has the following configuration in order to achieve such an object.
  • a mounting device for mounting electronic components on a substrate Any one of the above-described crimping heads; An elevating mechanism for elevating the crimping head; A holding stage for placing and holding the substrate; It is characterized by having prepared.
  • the electronic component may be a semiconductor device having bumps, and may be mounted on a substrate via a thermosetting resin.
  • the bumps of the semiconductor device and the electrodes of the substrate can be connected, and the thermosetting resin interposed between the semiconductor device and the substrate can be thermoset in a short time.
  • the present invention has the following configuration in order to achieve such an object.
  • a mounting method for mounting electronic components In the process of mounting the electronic component on the substrate while applying pressure and heating to the substrate by the crimping head, there is an elastic member in which at least one of the head main body and the pressing member is divided at a predetermined interval between the head main body and the pressing member constituting the crimping head, and the elastic member is arranged in the thickness direction. The elastic member is displaced toward the gap between adjacent elastic members while being deformed.
  • a plurality of elastic members are elastically deformed radially while expanding the area toward a space formed between adjacent divided portions. That is, the elastic member abutted with a smaller area than the pressing member can be efficiently elastically deformed in the direction orthogonal to the pressing force. Therefore, even if the thickness of the elastic member is reduced, the cushioning property due to elastic deformation can be enhanced.
  • the mounting apparatus using the same, and the mounting method the height variation is absorbed without damaging the electronic component, and the heat transfer to the electronic component is accelerated, and the bumps and substrate electrodes of the electronic component
  • the main pressure bonding in which the thermosetting resin interposed between the electronic component and the substrate is thermally cured in a short time.
  • compression-bonding apparatus which comprises a mounting apparatus. It is a top view of a conveyance mechanism. It is a front view of a conveyance mechanism. It is a longitudinal cross-sectional view of a crimping head. It is a perspective view of a pressure bonding head. It is a perspective view of a pressing member and an elastic member. It is a flowchart which shows operation
  • thermosetting resin is preferably NCF (non-conductive adhesive film).
  • the “semiconductor device” in the present invention includes bumps such as an IC chip, a semiconductor chip, an optical element, a surface mount component, a chip, a wafer, TCP (Tape Carrier Package), FPC (Flexible Printed Circuit), etc. is there.
  • These semiconductor devices show all forms on the side to be bonded to the substrate regardless of the type and size, for example, bonding of COG (Chip On Glass), TCP, and FPC which is chip bonding to a flat display panel. OLB (Outer
  • substrate for example, a flexible substrate, a glass epoxy substrate, a glass substrate, a ceramic substrate, a silicon interposer, a silicon substrate, or the like is used.
  • FIG. 1 is a perspective view showing a schematic configuration of a main crimping apparatus constituting a mounting apparatus according to the present invention
  • FIG. 2 is a plan view showing a main configuration of a transport mechanism.
  • the mounting apparatus includes a transport mechanism 1 and a main crimping apparatus 2.
  • a transport mechanism 1 As shown in FIGS. 1 and 2, the mounting apparatus according to the present invention includes a transport mechanism 1 and a main crimping apparatus 2.
  • a main crimping apparatus 2 As shown in FIGS. 1 and 2, the mounting apparatus according to the present invention includes a transport mechanism 1 and a main crimping apparatus 2.
  • the transport mechanism 1 includes a movable table 3 and a transport arm 4.
  • the movable table 3 is configured to move in the horizontal axis direction along the guide rail 5.
  • the transfer arm 4 is connected at its base end side to the lifting / lowering drive mechanism of the movable table 3 and is configured to be movable in the vertical (Z) direction and the Z axis ( ⁇ ) direction.
  • the transfer arm 4 includes a holding frame 6 at the tip. As shown in FIGS. 2 and 3, the holding frame 6 has a horseshoe shape, and includes a plurality of locking claws 7 for locking the plate for heat conduction delay and the substrate W at the corners.
  • the main crimping device 2 includes a movable table 8 and a pressing mechanism 9.
  • the movable table 8 includes a holding stage 10 that holds the substrate W by suction.
  • the holding stage 10 is configured to be movable in two horizontal axes (X, Y), up and down (Z), and around the Z axis ( ⁇ ).
  • the outer shape of the holding stage 10 is set to a size that fits inside the holding frame 6.
  • the holding stage 10 has a heater 11 embedded therein.
  • the pressing mechanism 9 includes a cylinder 13 and a pressure bonding head 14. That is, the cylinder 13 is connected to the upper side of the crimping head 14 so that the crimping head 14 moves up and down.
  • the crimping head 14 includes a head main body 16 in which the heater 15 is embedded, and a support holder 18 in which a plurality of pressing members 17 are housed in the lower portion of the head main body 16.
  • the heater 15 corresponds to the heater of the present invention.
  • the pressing member 17 has a downward convex shape.
  • the tip has an abutment surface that is substantially the same size as the semiconductor device C, and is aligned so as to press a plurality of semiconductor devices C arranged on the substrate W individually.
  • the pressing member 17 is configured such that the base end side is supported by the support holder 18 by passing the tip through a through hole slightly larger than the convex portion formed in the support holder 18. By tightening the support holder 18, the proximal end side of the pressing member 17 is gripped by the support holder 18 and the head body 16.
  • the pressure-bonding head 14 includes an elastic member 19 between the head main body 16 and the pressing member 17.
  • the elastic member 19 is configured by forming a lattice-like groove 20 on one sheet having a size equal to or less than the area of the proximal end of the pressing member 17.
  • the grooves 20 form a plurality of convex divided portions 21 on the sheet surface.
  • the elastic member general rubber can be used, but it is preferable to use heat-resistant fluoro rubber from the viewpoint of heating in particular.
  • the elastic modulus of the elastic member is preferably 70 to 90. If the elastic modulus is small, the lateral rigidity becomes small, and positional deviation is likely to occur. Moreover, since an elastic effect will become small if an elasticity modulus is too large, a film thickness cannot be made thin.
  • the controller 23 controls the temperature of the heater 15 of the pressure bonding head 14 and the temperature of the heater 11 of the holding stage 10 to be equal to or higher than the temperature at which the thermosetting resin G is cured.
  • thermosetting resin is completely cured with respect to the one in which a plurality of semiconductor devices C are transported in a pre-press-bonded state to the substrate W by NCF in the temporary press-bonding step of the previous step.
  • the case of crimping will be described as an example.
  • the temperature of both heaters 11 and 15 provided in the holding stage 10 and the pressure bonding head 14 is set by operating the operation unit 24.
  • the temperatures of both heaters 11 and 15 are set such that the temperature at the interface between the plate P and the substrate W for delaying heat conduction and the interface between the pressure bonding head 14 and the semiconductor device C are higher than the curing temperature of the thermosetting resin G.
  • the curing temperature is set (step S1).
  • the plate P is set so that, for example, the relationship between the heat transfer coefficient (W / m ⁇ K) L and the plate thickness (mm) T, that is, L / T is 1 or more and 20 or less.
  • the plate P is not limited to stainless steel, and may be any material that is not deformed by the pressing of the pressure-bonding head 14, and may be a metal, ceramic, carbon, a porous material, or the like.
  • step S2 When the initial setting is completed, the device is operated (step S2). On the main crimping apparatus side, the controller 23 starts temperature control so as to turn on the heaters 11 and 15 and keep the initial temperature constant.
  • a plate P is placed on the holding frame 6 of the transport mechanism 1 and a substrate W is placed on the plate P after that by a transport robot (not shown) arranged on the temporary press-bonding process side. (Step S3).
  • the plate P and the substrate W are conveyed to the main crimping apparatus 2.
  • the substrate W is transferred to the holding stage 10 as shown by the two-dot chain line in FIG.
  • a plurality of through holes are formed in the plate P and are sucked and held by the holding stage 10 through the through holes (step S4).
  • the holding stage 10 is moved to a predetermined mounting position below the pressure-bonding head 14 which is the front (Y direction in FIG. 1) by a driving mechanism (not shown).
  • the heating is started by the heater 11 from the time when the plate P and the substrate W are attracted and held on the holding stage 10 (step S5).
  • the crimping head 14 When the holding stage 10 reaches the mounting position, as shown in FIG. 9, the crimping head 14 is lowered by the operation of the cylinder 13, and a plurality of semiconductor devices C are sandwiched simultaneously. At this time, the semiconductor device C is pressed while being heated by the heated crimping head 14 (step S6).
  • thermosetting resin G when the pressure bonding head 14 is lowered to a predetermined height, the thermosetting resin G is in an uncured state, so that the bump B of the semiconductor device C is heated by the pressure of the pressure bonding head 14 as shown in FIG. It is pushed into the curable resin G. That is, after the bump B of the semiconductor device C reaches the electrode of the substrate W, the thermosetting resin is cured.
  • the heater temperature is controlled to melt the solder before the adhesive is completely cured.
  • each divided portion 21 expands the area toward the groove 20.
  • step S7 When the semiconductor device C is pressurized and heated until a predetermined time for the thermosetting resin G to cure (step S7), the pressure bonding head 14 is returned to the upper standby position to release the pressure, and the transport mechanism 1 causes the plate P to be released. And the substrate W are unloaded (step S8).
  • the plate P and the substrate W are transported to a predetermined position, they are transferred to another transport robot or stored in a stocker.
  • each divided portion 21 of the elastic member 19 provided between the head main body 16 and the pressing member 17 is elastically deformed while radially expanding in the groove direction along with the compression. Even if the thickness is the same as that of one flat sheet, the amount of displacement when compressed can be made larger than that of a conventional sheet. Therefore, even if the thickness of the entire sheet is reduced, a displacement amount equal to or greater than that of the conventional sheet can be earned. As a result, since the thickness of the elastic member 19 is reduced, the heat of the heater 11 embedded in the head body 16 can be efficiently transmitted to the pressing member 17, so that the thermosetting resin G can be reliably heated in a short time. It can be cured.
  • the present invention is not limited to the embodiment described above, and can be modified as follows.
  • the elastic member 19 is not limited to the above embodiment, and may be configured as follows, for example.
  • the elastic members 19 having an area smaller than the base end face of the pressing member 17 may be arranged and arranged in a two-dimensional array at a predetermined interval.
  • the shape of the divided portion 21 is not limited to a rectangle, and may be any shape that can be displaced radially, for example, a circle or a hexagon.
  • the pressure-bonding head 14 of the above-described embodiment apparatus can be used for a single type for main-bonding one semiconductor device C or a multi-type having a plurality of the single types as shown in FIG. it can.
  • the heater 15 of the crimping head 14 is embedded in the head main body 16, but may be configured to be heated from the outside of the head main body 16. In the above embodiment, the heater is heated to a high temperature. However, a pulse heater that changes the temperature during the process can be used, and mounting can be performed without using a plate for delaying heat conduction.
  • thermosetting resin any implementation that requires absorption can be effectively applied.
  • it may be used for flip chip mounting without interposing a thermosetting resin, die bonding for mounting a non-electrode surface of a semiconductor chip on a substrate via a thermosetting resin, or the like.
  • the present invention may be used when mounting electronic components (resistors, capacitors, piezoelectric elements, etc.) other than semiconductor devices on a substrate.

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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

To efficiently transmit heat from a crimp head (14) to an electronic component side, absorb height unevenness among multiple electronic components, and mount with appropriate pressing. Specifically, a crimp head (14), a cylinder (13) moving the crimp head (14) up and down, and a holding stage (10) placing and holding a substrate (W) are provided, the crimp head being provided with a head main body (16), a press member (17) pressing an electronic component (C) being mounted on the lower section of the head main body (16), and an elastic member (19) interposed between the head main body (16) and the pressing member (17) and being in contact with the surface of at least one of the head main body (16) and the press member (17) on multiple surfaces divided at predetermined intervals.

Description

圧着ヘッド、それを用いた実装装置および実装方法Crimping head, mounting apparatus and mounting method using the same
　本発明は、フレキシブル基板、ガラスエポキシ基板、ガラス基板、セラミックス基板、シリコンインターポーザー、シリコン基板などの回路基板にＩＣ、ＬＳＩなどの半導体装置やその他の電子部品を接着、直接に電気的接合または積層状態のまま実装するための圧着ヘッドと、それを用いた実装装置および実装方法に関する。 The present invention adheres to a circuit board such as a flexible substrate, a glass epoxy substrate, a glass substrate, a ceramic substrate, a silicon interposer, or a silicon substrate, and directly bonds or laminates a semiconductor device such as an IC or LSI or other electronic components. The present invention relates to a crimping head for mounting in a state, a mounting apparatus using the same, and a mounting method.
　半導体装置をはじめとする電子部品の小型化と高密度化に伴い、電子部品を回路基板に実装する方法としてフリップチップ実装、さらには電子部品を貫通する貫通電極によって３次元的に積層する三次元積層実装が急速に広まってきている。そこで、実装における接合の信頼性確保が重要になってきている。例えば、半導体チップの接合部分の接続信頼性を確保するための方法としては、半導体チップ上に形成されたバンプと回路基板の電極パッドを接合した後に、半導体チップと回路基板との隙間に液状封止接着剤を注入し硬化させることが一般的な方法として採られている。 As electronic components such as semiconductor devices become smaller and more dense, flip-chip mounting is a method for mounting electronic components on circuit boards, and three-dimensional stacking is performed three-dimensionally with through electrodes that penetrate the electronic components. Stacked packaging is spreading rapidly. Therefore, it is important to ensure the reliability of bonding in mounting. For example, as a method for ensuring the connection reliability of the joining portion of the semiconductor chip, after bonding the bump formed on the semiconductor chip and the electrode pad of the circuit board, liquid sealing is performed in the gap between the semiconductor chip and the circuit board. It is a common method to inject and cure the adhesive.
　また、近年、予め接着剤を形成したバンプ付き半導体チップや基板をフリップチップ接続し、電気的接合と樹脂封止を同時に行う方法が提案されている。例えば、下型から上向きにバネ付勢されて当該下型から離間された基板保持プレートに絶縁接着剤を介して半導体装置の仮実装された基板を載置し、ヒータ内蔵の上型を当該基板に近接対向させる。この状態で上型からの輻射熱によって基板を予備加熱した後に、当該上型を下降させて半導体装置を押圧および加熱しながら基板に固着させている（特許文献１を参照）。 In recent years, a method has been proposed in which a semiconductor chip or a substrate with a bump on which an adhesive has been formed in advance is flip-chip connected to perform electrical bonding and resin sealing at the same time. For example, a substrate on which a semiconductor device is temporarily mounted via an insulating adhesive is placed on a substrate holding plate that is spring-biased upward from the lower die and separated from the lower die, and the upper die with a built-in heater is used as the substrate. Proximity to face. In this state, the substrate is preheated by radiant heat from the upper die, and then the upper die is lowered to fix the semiconductor device to the substrate while pressing and heating (see Patent Document 1).
　また、１個の加熱加圧ヘッドによって複数個の半導体チップ同時に基板に圧着するとき、半導体チップの高さのバラツキを吸収して全ての半導体チップに均一に押圧が作用するように構成している。具体的には、複数個の半導体チップを同時に押圧する複数個の加熱加圧ツールを収納する空洞が加熱加圧ヘッドに形成されており、当該空洞の基端側に弾性体を挿入し、加熱加圧ツールを加圧加熱ヘッド内で弾性支持している（特許文献２を参照）。 In addition, when a plurality of semiconductor chips are simultaneously pressure-bonded to a substrate by one heating / pressurizing head, the semiconductor chip height is absorbed to uniformly apply pressure to all the semiconductor chips. . Specifically, a cavity for storing a plurality of heating and pressing tools that simultaneously press a plurality of semiconductor chips is formed in the heating and pressing head, and an elastic body is inserted into the proximal end side of the cavity to heat the cavity. The pressure tool is elastically supported in the pressure heating head (see Patent Document 2).
特開２０１１－１５９８４７号公報JP 2011-159847 A 特開２０１０－３４４２３号公報JP 2010-34423 A
　しかしながら、加熱加圧ヘッドと加熱加圧ツールの間に介在させる弾性体は、半導体チップの高さのバラツキを吸収させるための弾性変形を考慮した厚みによって、半導体チップへの熱伝達が阻害されている。その結果、熱伝達の遅延および熱損を招くという不都合が生じている。このような不都合は半導体チップに限ったものではなく、その他の電子部品の実装においても生じ得るものである。この場合、加熱機の温度を高めたり、はんだバンプを使用する場合には、はんだ溶融前に接着剤が硬化し接続不良を招く不都合が生じていた。 However, the elastic body interposed between the heating and pressing head and the heating and pressing tool has a thickness that takes into account the elastic deformation to absorb the variation in the height of the semiconductor chip, and heat transfer to the semiconductor chip is hindered. Yes. As a result, there is a disadvantage that heat transfer is delayed and heat loss is caused. Such an inconvenience is not limited to the semiconductor chip, but can also occur when mounting other electronic components. In this case, when the temperature of the heater is increased or the solder bump is used, there is a problem that the adhesive is cured before the solder is melted, resulting in poor connection.
　本発明はこのような事情に鑑みてなされたものであって、電子部品に適切な押圧を作用させて電子部品の高さバラツキを吸収し破損を防止するとともに、電子部品への伝熱を早めて電子部品のバンプと基板電極の確実な接続を行い、短時間で熱伝導させることを可能とする圧着ヘッドと、それを用いた実装装置および実装方法を提供することを主たる目的としている。 The present invention has been made in view of such circumstances, and applies an appropriate pressure to the electronic component to absorb the height variation of the electronic component to prevent breakage and to accelerate heat transfer to the electronic component. The main object of the present invention is to provide a crimping head capable of reliably connecting a bump of an electronic component and a substrate electrode and conducting heat conduction in a short time, and a mounting apparatus and mounting method using the same.
　この発明は、このような目的を達成するために、次のような構成をとる。 This invention has the following configuration in order to achieve such an object.
　すなわち、電子部品を基板に実装する圧着ヘッドであって、
　ヘッド本体と、
　前記ヘッド本体の下部に装着され、電子部品を押圧する押圧部材と、
　前記ヘッド本体と押圧部材との間に介在し、所定間隔をおいて分割された複数個の面でヘッド本体と押圧部材の少なくともいずれか一方の面に当接する弾性部材とを備えた
　ことを特徴とする。 That is, a crimping head for mounting electronic components on a substrate,
The head body,
A pressing member attached to a lower portion of the head body and pressing an electronic component;
An elastic member interposed between the head main body and the pressing member and having a plurality of surfaces divided at a predetermined interval and abutting against at least one surface of the head main body and the pressing member. And
　（作用・効果）　この構成によれば、圧着ヘッドと押圧部材の間に介在する弾性部材は、小面積の分割部位によって押圧部材または圧着ヘッドの少なくともいずれかに当接している。それ故に、圧着時の押圧が当該押圧部材に作用すると、分割部位の個々は、隣接する分割部位同士の間に形成された空間に向けて面積を拡大しながら略放射状に弾性変形する。すなわち、押圧部材よりも小面積で当接させた弾性部材を押圧力と直交する方向に効率よく面積を拡大しながら弾性変形させることができる。したがって、弾性部材の厚みを薄くしても、弾性変形によるクッション性を高めることが可能となる。 (Operation / Effect) According to this configuration, the elastic member interposed between the crimping head and the pressing member is in contact with at least one of the pressing member and the crimping head through a small-area divided portion. For this reason, when the pressing at the time of crimping acts on the pressing member, each of the divided portions elastically deforms in a substantially radial manner while expanding the area toward the space formed between the adjacent divided portions. That is, the elastic member abutted with a smaller area than the pressing member can be elastically deformed while efficiently expanding the area in a direction orthogonal to the pressing force. Therefore, even if the thickness of the elastic member is reduced, the cushioning property due to elastic deformation can be improved.
　また、弾性部材の薄化に伴って、圧着ヘッドからの熱を押圧部材に効率よる伝達させることが可能となる。したがって、電子部品に過度の押圧による破損を防止するとともに、ヘッド本体を加熱した際の熱を短時間で確実に電子部品側に伝搬させることができる。 Also, with the thinning of the elastic member, heat from the crimping head can be efficiently transmitted to the pressing member. Therefore, the electronic component can be prevented from being damaged due to excessive pressing, and the heat when the head body is heated can be reliably propagated to the electronic component side in a short time.
　なお、上記構成において、圧着ヘッドは、例えば、複数個の電子部品を同時に押圧する複数個の押圧部材を備え、
　押圧部材ごとに複数個の面を有する弾性部材を介在させてもよい。 In the above configuration, the crimping head includes, for example, a plurality of pressing members that simultaneously press a plurality of electronic components,
An elastic member having a plurality of surfaces may be interposed for each pressing member.
　この構成の一実施形態として、弾性部材は、１枚の弾性シートの片面に複数個に分割された凸面を有する弾性シートで構成してもよい。 As an embodiment of this configuration, the elastic member may be formed of an elastic sheet having a convex surface divided into a plurality of sides on one side of one elastic sheet.
　他の実施形態として、弾性部材は、ヘッド本体と押圧部材との間に複数個の弾性部材を、所定間隔をおいて整列配置して構成してもよい。 As another embodiment, the elastic member may be configured by arranging a plurality of elastic members between the head main body and the pressing member at predetermined intervals.
　更に、ヘッド本体に埋設された加熱器を備えた構成であってもよい。 Furthermore, the structure provided with the heater embedded at the head main body may be sufficient.
　上記構成によれば、基板上に複数個の電子部品全てを同時かつ均等に加熱圧着することが可能となる。 According to the above configuration, all of the plurality of electronic components can be thermocompression bonded simultaneously and evenly on the substrate.
　また、この発明は、このような目的を達成するために、次のような構成をとる。 Also, the present invention has the following configuration in order to achieve such an object.
　すなわち、電子部品を基板に実装する実装装置であって、
　上記記載のいずれかの圧着ヘッドと、
　前記圧着ヘッドを昇降させる昇降機構と、
　前記基板を載置保持する保持ステージと、
　と備えたことを特徴とする。 That is, a mounting device for mounting electronic components on a substrate,
Any one of the above-described crimping heads;
An elevating mechanism for elevating the crimping head;
A holding stage for placing and holding the substrate;
It is characterized by having prepared.
　（作用・効果）　この構成によれば、保持ステージ上に載置保持された基板に電子部品を実装する際に過度の押圧による破損を防止するとともに、基板と電子部品の界面を短時間で確実に昇温させることができる。 (Operation / Effect) According to this configuration, when an electronic component is mounted on a substrate placed and held on a holding stage, damage due to excessive pressing is prevented, and the interface between the substrate and the electronic component is ensured in a short time. The temperature can be increased.
　なお、上記構成で、電子部品がバンプを有する半導体装置であって、熱硬化性樹脂を介して基板に実装するものであってもよい。この場合、半導体装置のバンプと基板の電極を接続するとともに、半導体装置と基板の間に介在する熱硬化性樹脂を短時間で熱硬化させることが出来る。 In the above configuration, the electronic component may be a semiconductor device having bumps, and may be mounted on a substrate via a thermosetting resin. In this case, the bumps of the semiconductor device and the electrodes of the substrate can be connected, and the thermosetting resin interposed between the semiconductor device and the substrate can be thermoset in a short time.
　また、この発明は、このような目的を達成するために、次のような構成をとる。 Also, the present invention has the following configuration in order to achieve such an object.
　電子部品を実装する実装方法であって、
　前記圧着ヘッドによって電子部品を基板に加圧および加熱しながら基板に実装する過程で、
　前記圧着ヘッドを構成するヘッド本体と押圧部材の間で、所定間隔をおいて、ヘッド本体と押圧部材の少なくともいずれか一方の面が分割された弾性部材を有し、前記弾性部材を厚み方向に変形させながら、隣接する弾性部材同士の間隙に向けて弾性部材を変位させる
　ことを特徴とする。 A mounting method for mounting electronic components,
In the process of mounting the electronic component on the substrate while applying pressure and heating to the substrate by the crimping head,
There is an elastic member in which at least one of the head main body and the pressing member is divided at a predetermined interval between the head main body and the pressing member constituting the crimping head, and the elastic member is arranged in the thickness direction. The elastic member is displaced toward the gap between adjacent elastic members while being deformed.
　（作用・効果）　この方法によれば、複数個の弾性部材が、隣接する分割部位同士の間に形成された空間に向けて面積を拡大しながら放射状に弾性変形する。すなわち、押圧部材よりも小面積で当接させた弾性部材を押圧力と直交する方向に効率よく弾性変形させることができる。したがって、弾性部材の厚みを薄くしても、弾性変形によるクッション性を高めることができる。 (Action / Effect) According to this method, a plurality of elastic members are elastically deformed radially while expanding the area toward a space formed between adjacent divided portions. That is, the elastic member abutted with a smaller area than the pressing member can be efficiently elastically deformed in the direction orthogonal to the pressing force. Therefore, even if the thickness of the elastic member is reduced, the cushioning property due to elastic deformation can be enhanced.
　また、弾性部材の薄化に伴って、圧着ヘッドからの熱を押圧部材に効率よる伝達させることができる。したがって、電子部品の高さバラツキを吸収して過度の押圧による破損を防止するとともに、ヘッド本体を加熱した際の熱を短時間で確実に電子部品側に伝搬させることができる。 Also, with the thinning of the elastic member, heat from the crimping head can be efficiently transmitted to the pressing member. Therefore, it is possible to absorb the height variation of the electronic component to prevent damage due to excessive pressing, and to reliably propagate the heat when the head body is heated to the electronic component side in a short time.
　本発明の圧着ヘッド、それを用いた実装装置および実装方法によれば、電子部品を破損させることなく高さバラツキを吸収するとともに、電子部品への伝熱を早めて電子部品のバンプと基板電極の確実な接続を行い、当該電子部品と基板の間に介在する熱硬化性樹脂を短時間で熱硬化させる本圧着を実現することができる。 According to the crimping head of the present invention, the mounting apparatus using the same, and the mounting method, the height variation is absorbed without damaging the electronic component, and the heat transfer to the electronic component is accelerated, and the bumps and substrate electrodes of the electronic component Thus, it is possible to realize the main pressure bonding in which the thermosetting resin interposed between the electronic component and the substrate is thermally cured in a short time.
実装装置を構成する本圧着装置の概略全体構成を示す斜視図である。It is a perspective view which shows the schematic whole structure of this crimping | compression-bonding apparatus which comprises a mounting apparatus. 搬送機構の平面図である。It is a top view of a conveyance mechanism. 搬送機構の正面図である。It is a front view of a conveyance mechanism. 圧着ヘッドの縦断面図である。It is a longitudinal cross-sectional view of a crimping head. 圧着ヘッドの斜視図である。It is a perspective view of a pressure bonding head. 押圧部材と弾性部材の斜視図である。It is a perspective view of a pressing member and an elastic member. 実施例装置の一巡の動作を示すフローチャートである。It is a flowchart which shows operation | movement of a circuit of an Example apparatus. プレートおよび基板の搬送動作を示す正面図である。It is a front view which shows the conveyance operation of a plate and a board | substrate. 基板に半導体装置を本圧着する動作を示す図である。It is a figure which shows the operation | movement which carries out the main pressure bonding of the semiconductor device to a board | substrate. 基板に半導体装置を本圧着する動作を示す図である。It is a figure which shows the operation | movement which carries out the main pressure bonding of the semiconductor device to a board | substrate. 変形例装置の斜視図である。It is a perspective view of a modification apparatus.
　以下、図面を参照して本発明の一実施例を説明する。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
　本実施例では、熱硬化性樹脂としてＮＣＰ（Non-Conductive Paste）、ＮＣＦ（Non-Conductive Film）などを使用して、電子部品としての半導体装置を基板に実装する場合を例に採って説明する。また本発明の実装方法においては、熱硬化性樹脂は、ＮＣＦ（非導電性接着剤フィルム）であることが好ましい。 In this embodiment, a case where a semiconductor device as an electronic component is mounted on a substrate using NCP (Non-Conductive Paste), NCF (Non-Conductive Film), or the like as a thermosetting resin will be described as an example. . In the mounting method of the present invention, the thermosetting resin is preferably NCF (non-conductive adhesive film).
　なお、本発明における「半導体装置」としては、例えば、ＩＣチップ、半導体チップ、光素子、表面実装部品、チップ、ウエハ、ＴＣＰ（Tape Carrier Package）、ＦＰＣ（Flexible Printed Circuit）などバンプを有するものである。また、これら半導体装置は、種類や大きさに関係なく、基板と接合させる側の全ての形態を示し、例えばフラット表示パネルへのチップボンディングであるＣＯＧ（Chip On Glass）、ＴＣＰ、およびＦＰＣのボンディングであるＯＬＢ（Outer Lead Bonding）などが使用される。 The “semiconductor device” in the present invention includes bumps such as an IC chip, a semiconductor chip, an optical element, a surface mount component, a chip, a wafer, TCP (Tape Carrier Package), FPC (Flexible Printed Circuit), etc. is there. These semiconductor devices show all forms on the side to be bonded to the substrate regardless of the type and size, for example, bonding of COG (Chip On Glass), TCP, and FPC which is chip bonding to a flat display panel. OLB (Outer | Lead | Bonding) etc. which are are used.
　また、本発明における「基板」とは、例えば、フレキシブル基板、ガラスエポキシ基板、ガラス基板、セラミックス基板、シリコンインターポーザー、シリコン基板などが使用される。 In addition, as the “substrate” in the present invention, for example, a flexible substrate, a glass epoxy substrate, a glass substrate, a ceramic substrate, a silicon interposer, a silicon substrate, or the like is used.
　先ず、本実施例に使用する装置について図面を参照して具体的に説明する。図１は本発明に係る実装装置を構成する本圧着装置の概略構成を示した斜視図、図２は搬送機構の要部構成を示した平面図である。 First, the apparatus used in the present embodiment will be specifically described with reference to the drawings. FIG. 1 is a perspective view showing a schematic configuration of a main crimping apparatus constituting a mounting apparatus according to the present invention, and FIG. 2 is a plan view showing a main configuration of a transport mechanism.
　図１および図２に示すように、本発明における実装装置は、搬送機構１および本圧着装置２から構成されている。以下、各構成について詳述する。 As shown in FIGS. 1 and 2, the mounting apparatus according to the present invention includes a transport mechanism 1 and a main crimping apparatus 2. Hereinafter, each configuration will be described in detail.
　搬送機構１は、可動台３および搬送アーム４を備えている。可動台３は、ガイドレール５に沿って水平軸方向に移動するよう構成されている。 The transport mechanism 1 includes a movable table 3 and a transport arm 4. The movable table 3 is configured to move in the horizontal axis direction along the guide rail 5.
　搬送アーム４は、基端側を可動台３の昇降駆動機構に連結されており、上下（Ｚ）方向、およびＺ軸周り（θ）方向に、それぞれ移動自在に構成されている。また、搬送アーム４は、先端に保持フレーム６を備えている。保持フレーム６は、図２および図３に示すように、馬蹄形をしており、熱伝導遅延用のプレートおよび基板Ｗを係止する複数個の係止爪７を角部に備えている。 The transfer arm 4 is connected at its base end side to the lifting / lowering drive mechanism of the movable table 3 and is configured to be movable in the vertical (Z) direction and the Z axis (θ) direction. The transfer arm 4 includes a holding frame 6 at the tip. As shown in FIGS. 2 and 3, the holding frame 6 has a horseshoe shape, and includes a plurality of locking claws 7 for locking the plate for heat conduction delay and the substrate W at the corners.
　本圧着装置２は、可動テーブル８および押圧機構９などから構成されている。 The main crimping device 2 includes a movable table 8 and a pressing mechanism 9.
　可動テーブル８は、基板Ｗを吸着保持する保持ステージ１０を備えている。保持ステージ１０は、水平２軸（Ｘ，Ｙ）方向、上下（Ｚ）方向、およびＺ軸周り（θ）方向に、それぞれ移動自在に構成されている。なお、保持ステージ１０の外形は、保持フレーム６の内側に収まるサイズに設定されている。また、保持ステージ１０は、内部にヒータ１１が埋設されている。 The movable table 8 includes a holding stage 10 that holds the substrate W by suction. The holding stage 10 is configured to be movable in two horizontal axes (X, Y), up and down (Z), and around the Z axis (θ). The outer shape of the holding stage 10 is set to a size that fits inside the holding frame 6. The holding stage 10 has a heater 11 embedded therein.
　押圧機構９は、シリンダ１３および圧着ヘッド１４などから構成されている。すなわち、圧着ヘッド１４の上方にシリンダ１３が連結されており、圧着ヘッド１４が上下に移動するよう構成されている。 The pressing mechanism 9 includes a cylinder 13 and a pressure bonding head 14. That is, the cylinder 13 is connected to the upper side of the crimping head 14 so that the crimping head 14 moves up and down.
　圧着ヘッド１４は、図４に示すように、ヒータ１５の埋設されたヘッド本体１６と、当該ヘット本体１６の下部に複数本の押圧部材１７を収納した支持ホルダ１８を備えている。なお、ヒータ１５は、本発明の加熱器に相当する。 As shown in FIG. 4, the crimping head 14 includes a head main body 16 in which the heater 15 is embedded, and a support holder 18 in which a plurality of pressing members 17 are housed in the lower portion of the head main body 16. The heater 15 corresponds to the heater of the present invention.
　押圧部材１７は、下向き凸形状をしている。その先端は、半導体装置Ｃと略同じサイズの当接面を有しており、基板Ｗに配置された複数個の半導体装置Ｃを個々に押圧するよう位置合わせされている。なお、押圧部材１７は、支持ホルダ１８に形成された当該凸部より僅かに大きい貫通孔に先端を通すことにより、基端側が支持ホルダ１８によって支持されるよう構成されている。支持ホルダ１８をネジ締めすることにより、押圧部材１７の基端側が、支持ホルダ１８とヘッド本体１６によって把持される。 The pressing member 17 has a downward convex shape. The tip has an abutment surface that is substantially the same size as the semiconductor device C, and is aligned so as to press a plurality of semiconductor devices C arranged on the substrate W individually. The pressing member 17 is configured such that the base end side is supported by the support holder 18 by passing the tip through a through hole slightly larger than the convex portion formed in the support holder 18. By tightening the support holder 18, the proximal end side of the pressing member 17 is gripped by the support holder 18 and the head body 16.
　さらに、圧着ヘッド１４は、ヘッド本体１６と押圧部材１７の間に弾性部材１９を備えている。弾性部材１９は、図５および図６に示すように、押圧部材１７の基端の面積以下の１枚のシートに格子状の溝２０を形成して構成されている。当該溝２０によってシート面に複数個の凸状の分割部位２１が形成される。溝２０の幅および深さを適宜に変更することにより、圧縮されたときに、分割部位２１の厚み方向の変位量を調整することができる。すなわち、圧縮によって厚みが薄くなるに伴って、当該押圧方向と直交する水平方向に分割部位の面積が放射状に拡大変位する。すなわち、分割部位２１の面積を拡大可能なスペースが、溝２０によって確保されている。 Furthermore, the pressure-bonding head 14 includes an elastic member 19 between the head main body 16 and the pressing member 17. As shown in FIGS. 5 and 6, the elastic member 19 is configured by forming a lattice-like groove 20 on one sheet having a size equal to or less than the area of the proximal end of the pressing member 17. The grooves 20 form a plurality of convex divided portions 21 on the sheet surface. By appropriately changing the width and depth of the groove 20, the amount of displacement in the thickness direction of the divided portion 21 can be adjusted when compressed. That is, as the thickness is reduced by compression, the area of the divided portion is radially expanded and displaced in the horizontal direction orthogonal to the pressing direction. That is, a space capable of expanding the area of the divided portion 21 is secured by the groove 20.
　弾性部材としては、一般的なゴムを使用することができるが、特に加熱するという観点から、耐熱性のフッ素ゴムを使用することが好ましい。また、弾性部材の弾性率は７０～９０であることが好ましい。弾性率が小さいと横方向への剛性が小さくなり、位置ズレを発生しやすくなる。また弾性率が大き過ぎると弾性効果が小さくなるため、膜厚を薄くすることができない。 As the elastic member, general rubber can be used, but it is preferable to use heat-resistant fluoro rubber from the viewpoint of heating in particular. The elastic modulus of the elastic member is preferably 70 to 90. If the elastic modulus is small, the lateral rigidity becomes small, and positional deviation is likely to occur. Moreover, since an elastic effect will become small if an elasticity modulus is too large, a film thickness cannot be made thin.
　制御部２３は、圧着ヘッド１４のヒータ１５および保持ステージ１０のヒータ１１の温度が、熱硬化性樹脂Ｇを硬化させる温度と同等またはそれ以上の温度となるよう制御している。 The controller 23 controls the temperature of the heater 15 of the pressure bonding head 14 and the temperature of the heater 11 of the holding stage 10 to be equal to or higher than the temperature at which the thermosetting resin G is cured.
　次に上述の実施例装置を用いて半導体装置Ｃを当該基板Ｗに本圧着する一巡の動作について、図７に示すフローチャートおよび図８から図１０を参照しながら説明する。なお、本実施例では、前工程の仮圧着工程でＮＣＦによって複数個の半導体装置Ｃが基板Ｗに予め仮圧着された状態で搬送されたものに対し、熱硬化性樹脂を完全に硬化させ本圧着する場合を例に採って説明する。 Next, a round operation of finally bonding the semiconductor device C to the substrate W using the above-described embodiment apparatus will be described with reference to the flowchart shown in FIG. 7 and FIGS. 8 to 10. In the present embodiment, the thermosetting resin is completely cured with respect to the one in which a plurality of semiconductor devices C are transported in a pre-press-bonded state to the substrate W by NCF in the temporary press-bonding step of the previous step. The case of crimping will be described as an example.
　先ず、保持ステージ１０および圧着ヘッド１４に備わった両ヒータ１１、１５の温度を、操作部２４を操作して設定する。ここで、両ヒータ１１、１５の温度は、熱伝導遅延用のプレートＰと基板Ｗの界面および圧着ヘッド１４と半導体装置Ｃの界面の温度が熱硬化性樹脂Ｇの硬化温度よりも高く設定される。すなわち、保持ステージ１０に吸着保持された基板Ｗが、圧着ヘッド１４の下側の実装位置に達した時点で、半導体装置ＣおよびプレートＰを介して熱硬化性樹脂Ｇに伝達される熱が、硬化温度になるように設定される（ステップＳ１）。 First, the temperature of both heaters 11 and 15 provided in the holding stage 10 and the pressure bonding head 14 is set by operating the operation unit 24. Here, the temperatures of both heaters 11 and 15 are set such that the temperature at the interface between the plate P and the substrate W for delaying heat conduction and the interface between the pressure bonding head 14 and the semiconductor device C are higher than the curing temperature of the thermosetting resin G. The That is, when the substrate W sucked and held by the holding stage 10 reaches the mounting position on the lower side of the pressure bonding head 14, the heat transferred to the thermosetting resin G through the semiconductor device C and the plate P is The curing temperature is set (step S1).
　また、本実施例では、プレートＰにステンレス鋼が使用される。ここで、プレートＰは、例えば、熱伝達率（Ｗ／ｍ・Ｋ）Ｌとプレートの厚み（ｍｍ）Ｔと関係、すなわち、Ｌ／Ｔが、１以上かつ２０以下となるように設定される。なお、プレートＰは、ステンレス鋼に限定されず、圧着ヘッド１４の押圧によって変形しない材質であればよく、金属、セラミック、カーボンおよび多孔質材などであってもよい。 In this embodiment, stainless steel is used for the plate P. Here, the plate P is set so that, for example, the relationship between the heat transfer coefficient (W / m · K) L and the plate thickness (mm) T, that is, L / T is 1 or more and 20 or less. . The plate P is not limited to stainless steel, and may be any material that is not deformed by the pressing of the pressure-bonding head 14, and may be a metal, ceramic, carbon, a porous material, or the like.
　初期設定が完了すると装置を作動させる（ステップＳ２）。本圧着装置側では、制御部２３がヒータ１１、１５をオンにして初期設定の温度を一定に保つように温度制御を開始する。 When the initial setting is completed, the device is operated (step S2). On the main crimping apparatus side, the controller 23 starts temperature control so as to turn on the heaters 11 and 15 and keep the initial temperature constant.
　仮圧着工程側に配備された図示しない搬送ロボットによって、図３に示すように、搬送機構１の保持フレーム６にプレートＰが載置され、その後に当該プレートＰ上に基板Ｗが載置される（ステップＳ３）。 As shown in FIG. 3, a plate P is placed on the holding frame 6 of the transport mechanism 1 and a substrate W is placed on the plate P after that by a transport robot (not shown) arranged on the temporary press-bonding process side. (Step S3).
　プレートＰと基板Ｗが重ね合わされた状態で、本圧着装置２へと搬送される。このプレートＰを下にして基板Ｗは、図８の二点鎖線で示すように、保持ステージ１０に移載される。プレートＰには、複数個の貫通孔が形成されおり、貫通孔を介して保持ステージ１０に吸着保持される（ステップＳ４）。また、保持ステージ１０は図示しない駆動機構によって、前方（図１のＹ方向）である、圧着ヘッド１４の下方の予め決められた実装位置に移動する。 In the state where the plate P and the substrate W are superposed, the plate P and the substrate W are conveyed to the main crimping apparatus 2. With the plate P facing down, the substrate W is transferred to the holding stage 10 as shown by the two-dot chain line in FIG. A plurality of through holes are formed in the plate P and are sucked and held by the holding stage 10 through the through holes (step S4). Further, the holding stage 10 is moved to a predetermined mounting position below the pressure-bonding head 14 which is the front (Y direction in FIG. 1) by a driving mechanism (not shown).
　保持ステージ１０にプレートＰおよび基板Ｗが吸着保持された時点からヒータ１１によって加熱が開始される（ステップＳ５）。 The heating is started by the heater 11 from the time when the plate P and the substrate W are attracted and held on the holding stage 10 (step S5).
　保持ステージ１０が実装位置に達すると、図９に示すように、シリンダ１３の作動により圧着ヘッド１４が下降し、複数個の半導体装置Ｃが同時に挟み込まれる。このとき、加熱されている圧着ヘッド１４によって、半導体装置Ｃは、加熱されながら押圧される（ステップＳ６）。 When the holding stage 10 reaches the mounting position, as shown in FIG. 9, the crimping head 14 is lowered by the operation of the cylinder 13, and a plurality of semiconductor devices C are sandwiched simultaneously. At this time, the semiconductor device C is pressed while being heated by the heated crimping head 14 (step S6).
　すなわち、圧着ヘッド１４が所定の高さまで下降したとき、熱硬化性樹脂Ｇは、未硬化状態にあるので、図１０に示すように、圧着ヘッド１４の加圧によって半導体装置ＣのバンプＢが熱硬化性樹脂Ｇに押し込まれる。すなわち、半導体装置ＣのバンプＢが基板Ｗの電極に達した後に、熱硬化性樹脂が硬化する。なお、半導体装置のバンプにはんだを用いた場合には、接着剤が完全に硬化する前に、はんだを溶融するようヒータの温度が制御される。 That is, when the pressure bonding head 14 is lowered to a predetermined height, the thermosetting resin G is in an uncured state, so that the bump B of the semiconductor device C is heated by the pressure of the pressure bonding head 14 as shown in FIG. It is pushed into the curable resin G. That is, after the bump B of the semiconductor device C reaches the electrode of the substrate W, the thermosetting resin is cured. When solder is used for the bumps of the semiconductor device, the heater temperature is controlled to melt the solder before the adhesive is completely cured.
　また、バンプＢが基板Ｗに達して押圧するとき、弾性部材１９が圧縮される。このとき、各分割部位２１が、溝２０に向けて面積を拡大する。 Also, when the bump B reaches the substrate W and is pressed, the elastic member 19 is compressed. At this time, each divided portion 21 expands the area toward the groove 20.
　熱硬化性樹脂Ｇが硬化する所定時間まで半導体装置Ｃを加圧および加熱すると（ステップＳ７）、圧着ヘッド１４を上方の待機位置に復帰させて加圧を解除するとともに、搬送機構１によりプレートＰと基板Ｗを搬出する（ステップＳ８）。 When the semiconductor device C is pressurized and heated until a predetermined time for the thermosetting resin G to cure (step S7), the pressure bonding head 14 is returned to the upper standby position to release the pressure, and the transport mechanism 1 causes the plate P to be released. And the substrate W are unloaded (step S8).
　プレートＰと基板Ｗを所定の位置まで搬送した後は、他の搬送ロボットに受け渡すか、或いはストッカに収納する。 After the plate P and the substrate W are transported to a predetermined position, they are transferred to another transport robot or stored in a stocker.
　以上で１枚の基板Ｗ上の半導体装置の実装が終了する。以後、所定枚数の基板について同じ動作が繰り返される。 This completes the mounting of the semiconductor device on one substrate W. Thereafter, the same operation is repeated for a predetermined number of substrates.
　この構成によれば、ヘッド本体１６と押圧部材１７の間に備えた弾性部材１９の個々の分割部位２１が、圧縮に伴って溝方向に放射状に面積を拡大しながら弾性変形するので、従来の１枚の平坦なシートと同じ厚みであっても、圧縮したときの変位量を従来のシートに比べて大きくすることが可能となる。したがって、シート全体の厚みを薄くしたとしても、従来のシートと同等以上の変位量をかせぐことができる。その結果、弾性部材１９の厚みが薄くなるので、ヘッド本体１６に埋設されたヒータ１１の熱を効率よく押圧部材１７に伝達させることができるので、短時間で確実に熱硬化性樹脂Ｇを熱硬化させることができる。 According to this configuration, each divided portion 21 of the elastic member 19 provided between the head main body 16 and the pressing member 17 is elastically deformed while radially expanding in the groove direction along with the compression. Even if the thickness is the same as that of one flat sheet, the amount of displacement when compressed can be made larger than that of a conventional sheet. Therefore, even if the thickness of the entire sheet is reduced, a displacement amount equal to or greater than that of the conventional sheet can be earned. As a result, since the thickness of the elastic member 19 is reduced, the heat of the heater 11 embedded in the head body 16 can be efficiently transmitted to the pressing member 17, so that the thermosetting resin G can be reliably heated in a short time. It can be cured.
　本発明は上述した実施例のものに限らず、次のように変形実施することもできる。 The present invention is not limited to the embodiment described above, and can be modified as follows.
　（１）上記実施例装置において、弾性部材１９は、上記実施例に限定されず、例えば以下のように構成してもよい。 (1) In the above-described embodiment apparatus, the elastic member 19 is not limited to the above embodiment, and may be configured as follows, for example.
　例えば、押圧部材１７の基端面より小さい面積の弾性部材１９を、所定間隔をおいて二次元アレー状に整列配備してもよい。なお、これら各実施例において、分割部位２１の形状は、矩形に限定されず、放射状に均等に変位可能な形状であればよく、例えば、円形や六角形状等であってもよい。 For example, the elastic members 19 having an area smaller than the base end face of the pressing member 17 may be arranged and arranged in a two-dimensional array at a predetermined interval. In each of these embodiments, the shape of the divided portion 21 is not limited to a rectangle, and may be any shape that can be displaced radially, for example, a circle or a hexagon.
　（２）上記実施例装置の圧着ヘッド１４は、１個の半導体装置Ｃを本圧着するシングルタイプまたは、図１１に示すように、当該シングルタイプを複数個備えたマルチタイプにも利用することができる。 (2) The pressure-bonding head 14 of the above-described embodiment apparatus can be used for a single type for main-bonding one semiconductor device C or a multi-type having a plurality of the single types as shown in FIG. it can.
　（３）上記実施例装置において、圧着ヘッド１４のヒータ１５は、ヘッド本体１６に埋設された構成となっているが、ヘッド本体１６の外部から加熱する構成であっても良い。また、上記実施例において、ヒータを高温に加熱することとしたが、工程中に温度を変化させるパルスヒータを使用することもでき、熱伝導遅延用のプレートを介さず実装を行うこともできる。 (3) In the above-described embodiment apparatus, the heater 15 of the crimping head 14 is embedded in the head main body 16, but may be configured to be heated from the outside of the head main body 16. In the above embodiment, the heater is heated to a high temperature. However, a pulse heater that changes the temperature during the process can be used, and mounting can be performed without using a plate for delaying heat conduction.
　なお、上記実施例においては、バンプを有する複数の半導体装置を熱硬化性樹脂を介して基板に実装する例を示したが、本発明は半導体装置に適切な押圧を作用させて高さバラツキの吸収が必要とされる実装であれば有効に適用することが出来る。例えば、熱硬化性樹脂を介在させないフリップチップ実装や、半導体チップの非電極面を熱硬化性樹脂を介して基板に実装するダイボンディング等に用いても良い。更に、半導体装置以外の電子部品（抵抗器、キャパシタ、圧電素子、等）を基板に実装するのに際して、本発明を用いても良い。 In the above-described embodiment, an example in which a plurality of semiconductor devices having bumps are mounted on a substrate via a thermosetting resin has been described. Any implementation that requires absorption can be effectively applied. For example, it may be used for flip chip mounting without interposing a thermosetting resin, die bonding for mounting a non-electrode surface of a semiconductor chip on a substrate via a thermosetting resin, or the like. Furthermore, the present invention may be used when mounting electronic components (resistors, capacitors, piezoelectric elements, etc.) other than semiconductor devices on a substrate.
　　１　…　搬送機構
　　２　…　本圧着装置
　　４　…　搬送アーム
　　６　…　保持フレーム
　　９　…　押圧機構
　１０　…　保持ステージ
　１１　…　ヒータ
　１３　…　シリンダ
　１４　…　圧着ヘッド
　１５　…　ヒータ
　１６　…　ヘッド本体
　１７　…　押圧部材
　１８　…　支持ホルダ
　１９　…　弾性部材
　２１　…　分割部位
　　Ｗ　…　基板
　　Ｃ　…　半導体装置
　　Ｇ　…　熱硬化性樹脂
　　Ｐ　…　熱伝達遅延用のプレート DESCRIPTION OF SYMBOLS 1 ... Conveyance mechanism 2 ... Main crimping device 4 ... Conveyance arm 6 ... Holding frame 9 ... Pressing mechanism 10 ... Holding stage 11 ... Heater 13 ... Cylinder 14 ... Crimping head 15 ... Heater 16 ... Head main body 17 ... Pressing member 18 ... Support holder DESCRIPTION OF SYMBOLS 19 ... Elastic member 21 ... Divided part W ... Substrate C ... Semiconductor device G ... Thermosetting resin P ... Heat transfer delay plate

Claims (8)

  1. 　電子部品を基板に実装する圧着ヘッドであって、
    　ヘッド本体と、
    　前記ヘッド本体の下部に装着され電子部品を押圧する押圧部材と、
    　前記ヘッド本体と押圧部材との間に介在し、所定間隔をおいて分割された複数個の面でヘッド本体と押圧部材の少なくともいずれか一方の面に当接する弾性部材とを備えた
    　ことを特徴とする圧着ヘッド。     A crimping head for mounting electronic components on a substrate,
    The head body,
    A pressing member mounted on the lower portion of the head body and pressing an electronic component;
    An elastic member interposed between the head main body and the pressing member and having a plurality of surfaces divided at a predetermined interval and abutting against at least one surface of the head main body and the pressing member. Crimp head.
  2. 　請求項１に記載の圧着ヘッドにおいて、
    　複数個の半導体装置を同時に押圧する複数個の押圧部材を備え、
    　前記押圧部材ごとに複数個の面を有する弾性部材を介在させた
    　ことを特徴とする圧着ヘッド。     The crimping head according to claim 1,
    A plurality of pressing members for simultaneously pressing a plurality of semiconductor devices;
    A pressure-bonding head, wherein an elastic member having a plurality of surfaces is interposed for each pressing member.
  3. 　請求項２に記載の圧着ヘッドにおいて、
    　前記弾性部材は、１枚の弾性シートの片面に複数個に分割された凸面を有する弾性シートである
    　ことを特徴とする圧着ヘッド。     The crimping head according to claim 2,
    The pressure-bonding head, wherein the elastic member is an elastic sheet having a convex surface divided into a plurality of surfaces on one side of one elastic sheet.
  4. 　請求項１ないし請求項３のいずれかに記載の圧着ヘッドにおいて、
    　前記弾性部材は、ヘッド本体と押圧部材との間に複数個の弾性部材を、所定間隔をおいて整列配置した
    　ことを特徴とする圧着ヘッド。     In the crimping head according to any one of claims 1 to 3,
    The pressure-bonding head, wherein the elastic member includes a plurality of elastic members arranged at predetermined intervals between the head body and the pressing member.
  5. 　請求項１ないし請求項４のいずれかに記載の圧着ヘッドであって、
    　前記ヘッド本体に埋設された加熱器を備えた
    　ことを特徴とする圧着ヘッド。     The crimping head according to any one of claims 1 to 4,
    A pressure-bonding head comprising a heater embedded in the head body.
  6. 　電子部品を基板に実装する実装装置であって、
    　請求項１ないし請求項５のいずれかに記載の圧着ヘッドと、
    　前記圧着ヘッドを昇降させる昇降機構と、
    　前記基板を載置保持する保持ステージと、
    　と備えたことを特徴とする実装装置。     A mounting device for mounting electronic components on a substrate,
    A crimping head according to any one of claims 1 to 5,
    An elevating mechanism for elevating the crimping head;
    A holding stage for placing and holding the substrate;
    A mounting apparatus characterized by comprising:
  7. 　請求項６に記載の実装装置であって、
    前記電子部品がバンプを有する半導体装置であって、熱硬化性樹脂を介して前記基板に実装することを特徴とする実装装置。     The mounting apparatus according to claim 6,
    The electronic device is a semiconductor device having bumps, and is mounted on the substrate via a thermosetting resin.
  8. 　電子部品を基板に実装する実装方法であって、
    　圧着ヘッドによって電子部品を基板に加圧および加熱しながら基板に実装する過程で、
    　前記圧着ヘッドを構成するヘッド本体と押圧部材の間で、所定間隔をおいてヘッド本体と押圧部材の少なくともいずれか一方の面が分割された弾性部材を有し、
    　前記弾性部材を厚み方向に変形させながら、隣接する弾性部材同士の間隙に向けて弾性部材を変位させる
    　ことを特徴とする実装方法。     A mounting method for mounting electronic components on a substrate,
    In the process of mounting electronic components on the substrate while pressing and heating the substrate with the crimping head,
    Between the head main body and the pressing member constituting the pressure-bonding head, an elastic member in which at least one surface of the head main body and the pressing member is divided at a predetermined interval,
    A mounting method comprising: displacing an elastic member toward a gap between adjacent elastic members while deforming the elastic member in a thickness direction.
PCT/JP2015/056138 2014-03-05 2015-03-03 Crimp head, and mounting device and mounting method using same WO2015133446A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200235070A1 (en) * 2017-01-30 2020-07-23 Shinkawa Ltd. Mounting apparatus and mounting system

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6663805B2 (en) 2016-06-28 2020-03-13 東レエンジニアリング株式会社 Mounting device and mounting method
JP2019050341A (en) * 2017-09-12 2019-03-28 東レエンジニアリング株式会社 Crimp head and mounting device
JP7181013B2 (en) * 2018-06-20 2022-11-30 Juki株式会社 Electronic component mounting apparatus and electronic component mounting method
JP2020080383A (en) * 2018-11-13 2020-05-28 株式会社ブイ・テクノロジー Manufacturing method and manufacturing device of display device
KR102670383B1 (en) 2019-03-29 2024-05-28 삼성전자주식회사 A chip bonding apparatus, a system for replacing bonding tool assembly, and a method for fabricating a semiconductor device using the chip bonding apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007294607A (en) * 2006-04-24 2007-11-08 Sony Chemical & Information Device Corp Pressing head and pressing device
JP2010034423A (en) * 2008-07-30 2010-02-12 Fujitsu Ltd Pressure-heating apparatus and method
JP2011009357A (en) * 2009-06-24 2011-01-13 Fujitsu Ltd Mounting device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0786336A (en) * 1993-09-10 1995-03-31 Fujitsu Ltd Bonding device
JP5401709B2 (en) 2010-02-02 2014-01-29 アピックヤマダ株式会社 Bonding apparatus and bonding method for semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007294607A (en) * 2006-04-24 2007-11-08 Sony Chemical & Information Device Corp Pressing head and pressing device
JP2010034423A (en) * 2008-07-30 2010-02-12 Fujitsu Ltd Pressure-heating apparatus and method
JP2011009357A (en) * 2009-06-24 2011-01-13 Fujitsu Ltd Mounting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200235070A1 (en) * 2017-01-30 2020-07-23 Shinkawa Ltd. Mounting apparatus and mounting system
US11545462B2 (en) * 2017-01-30 2023-01-03 Shinkawa Ltd. Mounting apparatus and mounting system

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