WO2015130054A1 - Batterie solaire à film mince de type solide utilisant un colorant à base de pérovskyte et son procédé de fabrication - Google Patents

Batterie solaire à film mince de type solide utilisant un colorant à base de pérovskyte et son procédé de fabrication Download PDF

Info

Publication number
WO2015130054A1
WO2015130054A1 PCT/KR2015/001710 KR2015001710W WO2015130054A1 WO 2015130054 A1 WO2015130054 A1 WO 2015130054A1 KR 2015001710 W KR2015001710 W KR 2015001710W WO 2015130054 A1 WO2015130054 A1 WO 2015130054A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
metal oxide
thin film
hole transport
dye
Prior art date
Application number
PCT/KR2015/001710
Other languages
English (en)
Korean (ko)
Inventor
김종복
윤정현
양휘찬
이주철
Original Assignee
주식회사 동진쎄미켐
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 동진쎄미켐 filed Critical 주식회사 동진쎄미켐
Publication of WO2015130054A1 publication Critical patent/WO2015130054A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a solar cell, and more particularly, to a solid thin film solar cell using a perovskite-based dye and forming a P-type metal oxide as a hole transport layer and using a perovskite-based dye that does not constitute an electrolyte. will be.
  • Dye-sensitized solar cells have the potential to replace conventional amorphous silicon solar cells because their manufacturing cost is significantly lower than that of conventional silicon-based solar cells. It is a photoelectrochemical solar cell whose main constituent material is a dye molecule capable of absorbing to generate an electron-hole pair, and a transition metal oxide for transferring the generated electrons.
  • Dye-sensitized solar cells can be manufactured in two forms. There is a liquid structure composed of a dye-adsorbed titanium dioxide photoelectrode and a redox electrolyte, and the other type has a solid structure composed of a solid hole conductor instead of a liquid electrolyte.
  • the liquid electrolyte mainly uses iodine materials, and the solid hole conductor uses organic molecules or polymer materials.
  • the liquid structure may reduce the efficiency by evaporation of the liquid electrolyte or the penetration of water molecules or oxygen molecules in the air and reaction with the electrolyte when the solar cell is poorly sealed, which may be a problem for the stability of the device. Since there is no problem of leakage, it is possible to manufacture a stable solar cell.
  • Dye mainly used in liquid-type dye-sensitized solar cell is an organometallic compound having ruthenium metal, and the thickness of titanium dioxide is required to be 10 ⁇ m or more in order to absorb light enough to absorb light of about 10,000-50,000.
  • Organic dyes containing such ruthenium-based metals are adsorbed on an oxide surface to form a solar cell, which requires a short time of 2 hours and a long time of 24 hours.
  • the perovskite photosensitizer can absorb light even at a relatively low titanium dioxide thickness of 0.1-1 ⁇ m because the absorption coefficient is more than 10 times higher than the organic dye.
  • Organic dyes have about 10% efficiency due to the charge separation process, but the perovskite light absorber (CH 3 NH 3 Pbl 3 ) is used for titanium dioxide nanoparticles.
  • the absorber accumulates photocharges and the efficiency is more than doubled.
  • Pulmonary lobesite materials are sensitizers for porous TiO 2 membranes, and when used in liquid dye-sensitized solar cells, they dissolve in the liquid electrolyte and degrade to 80% in a few hours.
  • waste lobesite materials have the advantages of easy synthesis and processing, but also have a problem of being easily degraded when exposed to air or moisture, and environmental restrictions due to toxicity in the case of perovskite materials using Pb materials. .
  • the present invention uses a perovskite-based dye and forming a P-type metal oxide as a hole transporting layer to form a solid-state thin film solar cell and a manufacturing method using a perovskite-based dye that does not constitute an electrolyte The purpose is to provide.
  • Solid-type thin film solar cell using a perovskite dye according to a feature of the present invention for achieving the above object
  • It includes a metal electrode formed of a conductive material on the hole transport layer.
  • Solid-type thin film solar cell using a perovskite dye according to a feature of the present invention
  • It includes an inorganic metal oxide layer formed of an inorganic metal oxide to suppress moisture and oxygen permeation on the metal electrode.
  • Solid-type thin film solar cell using a perovskite dye according to a feature of the present invention
  • It includes an inorganic metal oxide layer formed of an inorganic metal oxide to suppress moisture and oxygen permeation on the metal electrode.
  • Solid-type thin film solar cell using a perovskite dye according to a feature of the present invention
  • It includes an inorganic metal oxide layer formed of an inorganic metal oxide to suppress moisture and oxygen permeation on the metal electrode.
  • Solid-type thin film solar cell using a perovskite dye according to a feature of the present invention
  • It includes an inorganic metal oxide layer formed of an inorganic metal oxide to suppress moisture and oxygen permeation on the metal electrode.
  • a barrier layer with a thin film of metal oxide on a transparent electrode having a transparent conductive material Forming a barrier layer with a thin film of metal oxide on a transparent electrode having a transparent conductive material, adsorbing a dye having a perovskite structure on the barrier layer and heat treatment to form a photoelectrode layer step;
  • the present invention has the effect of providing a solid-state thin film solar cell using a perovskite dye using a perovskite dye and forming a P-type metal oxide as a hole transporting layer, thereby not forming an electrolyte. .
  • the hole transport layer of the solar cell is composed of P-type metal oxide, so that stability at high temperature is increased and crystallinity is excellent due to the metal oxide.
  • the hole transport layer of the solar cell may be formed of a P-type metal oxide to form a thin film, thereby maintaining transparency and facilitating the implementation of a transparent solar cell.
  • FIG. 1 is a view showing the configuration of a solid-type thin film solar cell using a perovskite dye according to a first embodiment of the present invention.
  • FIG. 2 is a view showing the configuration of a solid-type thin film solar cell using a perovskite dye according to a second embodiment of the present invention.
  • FIG. 3 is a view showing a method of manufacturing a solid-type thin film solar cell using the perovskite dyes according to the first and second embodiments of the present invention.
  • FIG. 1 is a view showing the configuration of a solid-type thin film solar cell using a perovskite dye according to a first embodiment of the present invention
  • Figure 2 is a perovskite dye using a perovskite dye according to a second embodiment of the present invention It is a figure which shows the structure of a solid type thin film solar cell.
  • the transparent electrode 100, the blocking layer 110, the porous photoelectrode layer 120, and the hole transport layer 130 are provided. And a metal electrode 140.
  • the transparent electrode 100 is TCO (Transparent Conductive Oxide) Glass, Indium Tin Oxide (ITO), Fluorine Tin Oxide (FTO), Antimony Tin Oxide (ATO), Zinc Oxide ( Zinc oxide, tin oxide, ZnOGa 2 O 3 , ZnO-Al 2 O 3 It may be made of a transparent material.
  • TCO Transparent Conductive Oxide
  • ITO Indium Tin Oxide
  • FTO Fluorine Tin Oxide
  • ATO Antimony Tin Oxide
  • Zinc Oxide Zinc oxide, tin oxide, ZnOGa 2 O 3 , ZnO-Al 2 O 3 It may be made of a transparent material.
  • a blocking layer 110 is formed on the transparent electrode 100 to prevent contact between the transparent electrode 100 and the hole transport material, and a porous photoelectrode layer 120 is formed thereon.
  • the blocking layer 110 blocks the reverse electrons from the transparent electrode 100 to the hole transport layer 130 to prevent a short circuit due to ohmic contact between the transparent electrode 100 and the hole transport layer 130.
  • the blocking layer 110 deposits a Ti metal on a TCO glass by using an atomic layer deposition (ALD) method, and forms a TiO 2 thin film layer having a thickness of 10-100 nm.
  • ALD atomic layer deposition
  • the blocking layer 110 includes all metal oxides such as zirconium, titanium, tin, zinc, ZnO, TiO 2 , ZrO 2 , Ta 2 O 3 , MgO, and HfO 2 in addition to Tio 2 .
  • the porous photoelectrode layer 120 includes a porous oxide semiconductor layer and a dye adsorbed on the porous oxide semiconductor layer.
  • the porous oxide semiconductor layer is formed by applying a paste containing a porous metal oxide on the blocking layer 110, and specific examples thereof include titanium, tin, zinc, tungsten, zirconium, gallium, indium, yttrium, niobium, tantalum, vanadium, Metal oxides such as ZnO, SnO 2, and the like, but are not limited thereto, and these may be used alone or in combination of two or more thereof.
  • the porous oxide semiconductor layer mainly uses a porous oxide semiconductor layer (TiO 2 thin film layer) present in the form of a porous membrane.
  • a porous oxide semiconductor layer TiO 2 thin film layer
  • the dye has a perovskite structure to generate electrons by absorbing external light on the surface of the metal oxide particles and is represented by the following Chemical Formula 1, and may be prepared from MX 2 and CH 3 NH 3 X.
  • Dye having a perovskite structure is a known material, the detailed description is omitted and can be prepared by a variety of known manufacturing methods.
  • M is Pb or Sn and X represents halogen.
  • the hole transport layer 130 is formed to a thickness of 0.01-0.7 ⁇ m, is formed by depositing a metal oxide on the porous photoelectrode layer 120 and to form a metal electrode 140 thereon.
  • the metal oxide is P-type metal oxide semiconductor nanoparticles such as copper oxide (CuO), tungsten oxide (WO 3 ), molybdenum oxide (MoO 3 ), or vanadium oxide (V 2 O 5 ), and is produced in the porous photoelectrode layer 120. Improved hole movement to improve the balance and speed of electron and hole movement.
  • CuO copper oxide
  • WO 3 tungsten oxide
  • MoO 3 molybdenum oxide
  • V 2 O 5 vanadium oxide
  • the hole transporting material of the conventional hole transporting layer is formed of an organic material, and thus is thermally unstable and has low hole transport efficiency.
  • the hole transport layer 130 of the present invention is composed of a P-type metal oxide to increase the stability at high temperature and excellent crystallinity by the metal oxide to increase the hole transport characteristics to increase the efficiency of the solar cell.
  • the hole transport layer 130 is composed of a P-type metal oxide, a thin film can be formed to maintain permeability and to easily implement a transparent solar cell.
  • the hole transport layer 130 of the perovskite dye and the P-type metal oxide improves the balance and speed and charge accumulation of electrons and holes, thereby eliminating the need for an electrolyte in the solar cell.
  • the present invention is not limited thereto, and the present invention may include a liquid electrolyte or a solid electrolyte in the structure of the solar cell of FIGS. 1 and 2.
  • the metal electrode 140 plays a role of activating a redox couple, and any conductive material may be used without limitation, and a conductive layer may be disposed on the side facing the transparent electrode 100 even if it is an insulating material. It can be used if it is installed. Specifically, platinum, ruthenium, palladium, iridium, rhodium (Rh), osmium (Os), carbon (C), WO 3 , TiO 2, Au, Cu, Ag, In, Ru, Pd, Rh, Ir and conductive polymers One or more materials selected from the group consisting of can be used.
  • an inorganic metal oxide layer 200 is formed in the solar cell structure as shown in FIG. 2.
  • FIG. 2 is a cross-sectional view of a layer made of an inorganic metal oxide that inhibits moisture and oxygen permeation in the structure of the solid-type thin film solar cell of the first embodiment of the present invention described above between the porous photoelectrode layer 120 and the hole transport layer 130.
  • One space 3 the second space 2 between the hole transport layer 130 and the metal electrode 140, the third space on one surface of the metal electrode 140 in the direction opposite to the direction in which the hole transport layer 130 is formed (1) can be formed.
  • the inorganic metal oxide layer 200 may be formed in any one of the first space 3, the second space 2, and the third space 1, and the first space 3 ),
  • the second space (2), the third space (1) may be formed in one or more spaces or may be formed in all three places.
  • the inorganic metal oxide layer 200 is formed in the third space 1 on one surface of the metal electrode 140 in a direction opposite to the direction in which the hole transport layer 130 is formed, and exhibits characteristics of the layer without affecting electrical properties. It is preferable for maintaining the reliability of the battery.
  • the inorganic metal oxide layer 200 is formed by applying a solution containing an inorganic metal oxide that inhibits moisture and oxygen permeation on the metal electrode 140.
  • the inorganic metal oxide layer 200 includes a porous photoelectrode layer 120 and a hole transporting layer 130 in a range in which there is no electrical resistance, i. It can also be formed in the 1st space 3 between.
  • the inorganic metal oxide layer 200 is made of an inorganic metal oxide such as Al 2 O 3 , MgO, BeO, SiC, TiO 2 , Si 3 N 4 , SiO 2, and the like, and the inorganic metal oxide is mixed in a predetermined ratio to form a single layer or It can be formed in a multilayer form.
  • an inorganic metal oxide such as Al 2 O 3 , MgO, BeO, SiC, TiO 2 , Si 3 N 4 , SiO 2, and the like, and the inorganic metal oxide is mixed in a predetermined ratio to form a single layer or It can be formed in a multilayer form.
  • the inorganic metal oxide layer 200 may be formed by forming an inorganic metal oxide in a single layer or a multilayer form, and then further stacking a polymer organic material to form a composite thin film layer.
  • the porous oxide semiconductor layer may not be formed, and the thin film-type metal oxide blocking layer 110 may be formed on the hole transport layer 130.
  • a dye having a perovskite structure can be adsorbed.
  • the perovskite is formed on the blocking layer 110.
  • the dye having a sky structure is adsorbed and the hole transport layer 130 of the P-type metal oxide semiconductor nanoparticles is sequentially formed on the adsorbed dye.
  • the solid-state thin film solar cell of the third embodiment of the present invention is formed of an inorganic metal oxide forming a metal electrode 140 on the hole transport layer 130 and suppressing moisture and oxygen permeation on the metal electrode 140.
  • An inorganic metal oxide layer 200 is formed.
  • the perovskite is formed on the blocking layer 110.
  • the dye having a structure is adsorbed, the hole transport layer 130 of the P-type metal oxide semiconductor nanoparticles is formed thereon, and the metal electrode 140 is sequentially formed on the hole transport layer 130.
  • the blocking layer 110 is formed using a metal oxide in a thin film form, and the hole transport layer 130 is formed using a P-type metal oxide, an inorganic metal oxide layer that suppresses moisture and oxygen permeation 200 may not be formed.
  • the perovskite on the blocking layer 110 After forming the blocking layer 110 formed of the metal oxide in the form of a thin film on the transparent electrode 100 to a certain thickness, the perovskite on the blocking layer 110 The dye having a structure is adsorbed and the hole transport layer 130 made of an organic material is sequentially formed on the adsorbed dye.
  • the solid-state thin film solar cell of the fifth exemplary embodiment of the present invention is formed of an inorganic metal oxide forming a metal electrode 140 on the hole transport layer 130 and suppressing moisture and oxygen permeation on the metal electrode 140.
  • An inorganic metal oxide layer 200 is formed.
  • the inorganic metal oxide layer 200 may be formed in any one of the first space 3, the second space 2, and the third space 1, and the first space 3 It may be formed in one or more spaces of the 2nd space (2), the 3rd space (1), or all three places.
  • the solid-state thin film solar cells of the first to fifth embodiments of the present invention can be applied to various applications such as automotive sunroofs, automotive interiors, BIPV windows, mobile chargers, and LED blocks.
  • FIG. 3 is a view showing a method of manufacturing a solid-type thin film solar cell using the perovskite dyes according to the first and second embodiments of the present invention.
  • Transparent Conductive Oxide (TCO) glass is cleaned in ethanol for some time using ultrasonic waves.
  • the blocking layer 110 deposits Ti metal on the TCO glass by atomic layer deposition (ALD), and forms a TiO 2 thin film layer having a thickness of 30-100 nm (S100).
  • ALD atomic layer deposition
  • the nanoparticle metal oxide paste is prepared by mixing ethanol with a powder of titanium dioxide (TiO 2 ) as a solvent to prepare a colloidal solution in which a metal oxide is dispersed, and then mixing ethylcellulose with a binder resin and removing a solvent.
  • TiO 2 titanium dioxide
  • the titanium dioxide (TiO 2 ) paste is coated using a doctor blade technology (S102).
  • a solution containing copper oxide (CuO) nanoparticles is deposited by spin coating and heated at 150 ° C. to form a hole transport layer 130 used as a P-type conductive film (S106).
  • Formation of the metal thin film is not limited to the spin coating method, and chemical vapor deposition (CVD), sputter deposition, paste coating, thermal evaporation, dip coating, and evaporation (e-beam evaporation). ), Various methods such as physical vapor deposition (PVD), atomic layer deposition (ALD), and the like can be used.
  • the metal electrode 140 is sputtered and deposited on the hole transport layer 130 (S108).
  • the inorganic metal oxide layer 200 may be formed by forming a metal thin film in a first space 3, a second space 2, and a third space 1 in a solar cell structure. It selects and forms in one place or several space.
  • the present invention has the effect of providing a solid-state thin film solar cell using a perovskite dye using a perovskite dye and forming a P-type metal oxide as a hole transporting layer, thereby not forming an electrolyte. .
  • the hole transport layer of the solar cell is composed of P-type metal oxide, so that stability at high temperature is increased and crystallinity is excellent due to the metal oxide.
  • the hole transport layer of the solar cell may be formed of a P-type metal oxide to form a thin film, thereby maintaining transparency and facilitating the implementation of a transparent solar cell.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une batterie solaire à film mince de type solide utilisant un colorant à base de pérovskyte comprenant : une électrode transparente qui est constituée d'un matériau transparent et possède une conductivité ; une couche d'interruption qui est formée sur l'électrode transparente, à laquelle est fixé un colorant ayant une structure à base de pérovskite et qui est formée en utilisant un film mince d'un oxyde métallique ayant une épaisseur prédéterminée ; une couche de transport de trous formée sur la couche d'interruption en utilisant un oxyde métallique de type P ; une électrode métallique formée sur la couche de transport de trous en utilisant un matériau conducteur ; et une couche d'oxyde métallique inorganique formée sur l'électrode métallique en utilisant un oxyde métallique inorganique qui supprime la transmission d'humidité et d'oxygène.
PCT/KR2015/001710 2014-02-25 2015-02-23 Batterie solaire à film mince de type solide utilisant un colorant à base de pérovskyte et son procédé de fabrication WO2015130054A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020140021746A KR102318356B1 (ko) 2014-02-25 2014-02-25 페로브스카이트계 염료를 이용한 고체형 박막 태양전지 및 제조 방법
KR10-2014-0021746 2014-02-25

Publications (1)

Publication Number Publication Date
WO2015130054A1 true WO2015130054A1 (fr) 2015-09-03

Family

ID=54009321

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2015/001710 WO2015130054A1 (fr) 2014-02-25 2015-02-23 Batterie solaire à film mince de type solide utilisant un colorant à base de pérovskyte et son procédé de fabrication

Country Status (2)

Country Link
KR (1) KR102318356B1 (fr)
WO (1) WO2015130054A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017078239A1 (fr) * 2015-11-02 2017-05-11 재단법인 멀티스케일 에너지시스템 연구단 Couche collectrice d'électrons pour cellule solaire à pérovskite fabriquée par dépôt par pulvérisation électrostatique, et procédé de fabrication associé
KR101701670B1 (ko) * 2016-01-11 2017-02-01 대구가톨릭대학교산학협력단 산소와 할로겐 원자로 개질 된 n형 반도체를 갖는 페로브스카이트 태양전지 및 그 제조방법
RU2645221C1 (ru) * 2016-09-30 2018-02-19 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) Перовскитная солнечная ячейка и способ ее изготовления
WO2018080050A1 (fr) * 2016-10-28 2018-05-03 광주과학기술원 Cellule solaire en pérovskite et de grande surface
KR101967666B1 (ko) 2018-01-18 2019-04-10 성균관대학교 산학협력단 대면적 페로브스카이트 박막의 제조 방법
KR102009471B1 (ko) * 2018-04-18 2019-08-09 한국화학연구원 향상된 산소 안정성을 갖는 페로브스카이트 태양전지 및 이의 제조방법
KR102135101B1 (ko) 2018-07-17 2020-07-17 경희대학교 산학협력단 반투명 및 유연 태양전지 및 그 제조 방법
KR20230109832A (ko) * 2022-01-14 2023-07-21 한화솔루션 주식회사 페로브스카이트 태양전지 및 이의 제조방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120085411A1 (en) * 2010-10-08 2012-04-12 Konica Minolta Business Technologies, Inc. Photoelectric conversion element and solar cell
US20120211730A1 (en) * 2009-08-11 2012-08-23 Ideal Star Inc. Hole Blocking Layer and Method for Producing Same, and Photoelectric Conversion Element Comprising the Hole Blocking Layer and Method for Manufacturing Same
US20130233377A1 (en) * 2012-02-21 2013-09-12 Northwestern University Liquid electrolyte-free, solid-state solar cells with inorganic hole transport materials
WO2014003294A1 (fr) * 2012-06-29 2014-01-03 성균관대학교산학협력단 Technique de fabrication de cellule solaire mésoporeuse en couche mince à base de pérovskite
WO2014020499A1 (fr) * 2012-08-03 2014-02-06 Ecole Polytechnique Federale De Lausanne (Epfl) Cellule solaire à hétérojonction à halogénure organométallique à structure pérovskite et son procédé de fabrication

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101172374B1 (ko) 2011-02-14 2012-08-08 성균관대학교산학협력단 페로브스카이트계 염료를 이용한 염료감응 태양 전지 및 이의 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120211730A1 (en) * 2009-08-11 2012-08-23 Ideal Star Inc. Hole Blocking Layer and Method for Producing Same, and Photoelectric Conversion Element Comprising the Hole Blocking Layer and Method for Manufacturing Same
US20120085411A1 (en) * 2010-10-08 2012-04-12 Konica Minolta Business Technologies, Inc. Photoelectric conversion element and solar cell
US20130233377A1 (en) * 2012-02-21 2013-09-12 Northwestern University Liquid electrolyte-free, solid-state solar cells with inorganic hole transport materials
WO2014003294A1 (fr) * 2012-06-29 2014-01-03 성균관대학교산학협력단 Technique de fabrication de cellule solaire mésoporeuse en couche mince à base de pérovskite
WO2014020499A1 (fr) * 2012-08-03 2014-02-06 Ecole Polytechnique Federale De Lausanne (Epfl) Cellule solaire à hétérojonction à halogénure organométallique à structure pérovskite et son procédé de fabrication

Also Published As

Publication number Publication date
KR20150100216A (ko) 2015-09-02
KR102318356B1 (ko) 2021-10-28

Similar Documents

Publication Publication Date Title
WO2015130054A1 (fr) Batterie solaire à film mince de type solide utilisant un colorant à base de pérovskyte et son procédé de fabrication
WO2017105053A1 (fr) Module monolithique de cellule solaire à pérovskite et son procédé de fabrication
EP3172776B9 (fr) Structure mésoscopique pour dispositif de conversion photoélectrique à base de pérovskite organique-inorganique et son procédé de fabrication
EP3017456B1 (fr) Cellule solaire et son procédé de fabrication
FI130068B (en) Double-sided solar cell unit
US20150302997A1 (en) Flexible electrodes and preparation method thereof, and flexible dye-sensitized solar cells using the same
WO2011090336A2 (fr) Cellule solaire dont le rendement de conversion est amélioré au moyen de champs électriques renforcés
JP2021099997A (ja) 透明電極、およびその製造方法、ならびにその透明電極を用いた電子デバイス
WO2014003294A1 (fr) Technique de fabrication de cellule solaire mésoporeuse en couche mince à base de pérovskite
WO2018012825A1 (fr) Cellule solaire composite organique-inorganique
WO2018079943A1 (fr) Cellule solaire en pérovskite utilisant un film barrière de diffusion et son procédé de fabrication
US20150380169A1 (en) Surface-Passivated Mesoporous Structure Solar Cell
EP4213220A1 (fr) Électrode transparente, procédé de fabrication d'électrode transparente et dispositif électronique
WO2013169004A1 (fr) Cellule solaire à colorant et son procédé de fabrication
Zhang et al. Enhanced performance of ZnO based perovskite solar cells by Nb2O5 surface passivation
US11942575B2 (en) Transparent electrode, method of producing transparent electrode, and electronic device
WO2012053763A2 (fr) Module de cellule solaire à colorant (dssc) pourvu d'une couche de diffusion de lumière et procédé de fabrication correspondant
JP2016178167A (ja) 光電極の製造方法、光電極、太陽電池の製造方法および太陽電池
WO2018016886A1 (fr) Procédé de fabrication de stratifié pour cellule solaire hybride organique-inorganique et procédé de fabrication de cellule solaire hybride organique-inorganique
WO2018043910A1 (fr) Matériau de transport de trous permettant d'améliorer l'efficacité de cellules solaires en pérovskite
JP2018157147A (ja) 固体接合型光電変換素子
Kartikay et al. All Room‐Temperature‐Processed Carbon‐Based Flexible Perovskite Solar Cells with TiO2 Electron Collection Layer
KR101727943B1 (ko) 광전효율이 우수한 페로브스카이트 태양전지의 제조방법 및 이에 의한 태양전지
JP2004356281A (ja) 色素増感光電変換素子
JP2016178166A (ja) 光電極の製造方法、光電極、太陽電池の製造方法および太陽電池

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15755232

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15755232

Country of ref document: EP

Kind code of ref document: A1