WO2015115388A1 - Piezoelectric device package and piezoelectric device - Google Patents

Piezoelectric device package and piezoelectric device Download PDF

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Publication number
WO2015115388A1
WO2015115388A1 PCT/JP2015/052094 JP2015052094W WO2015115388A1 WO 2015115388 A1 WO2015115388 A1 WO 2015115388A1 JP 2015052094 W JP2015052094 W JP 2015052094W WO 2015115388 A1 WO2015115388 A1 WO 2015115388A1
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WO
WIPO (PCT)
Prior art keywords
piezoelectric
vibrating piece
piezoelectric device
electrodes
package
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PCT/JP2015/052094
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French (fr)
Japanese (ja)
Inventor
浅水孝司
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日本電波工業株式会社
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Publication of WO2015115388A1 publication Critical patent/WO2015115388A1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H03H9/0552—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement the device and the other elements being mounted on opposite sides of a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H01L2924/15155—Shape the die mounting substrate comprising a recess for hosting the device the shape of the recess being other than a cuboid
    • H01L2924/15156—Side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/15323—Connection portion the connection portion being formed on the die mounting surface of the substrate being a land array, e.g. LGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Definitions

  • the present invention relates to a piezoelectric device package and a piezoelectric device.
  • the piezoelectric device is configured by accommodating a piezoelectric vibrating piece such as a quartz vibrating piece in a cavity in the package body.
  • the piezoelectric device includes a piezoelectric vibrating piece including an extraction electrode extracted from an excitation electrode formed in the vibration unit, and a package body in which a connection electrode is formed, and is connected to the extraction electrode.
  • a piezoelectric vibrating piece is held on a package body by a conductive adhesive disposed between electrodes (see, for example, Patent Document 1).
  • a conductive adhesive is previously applied to the surface of the connection electrode, the piezoelectric vibrating piece is placed on the adhesive, and the piezoelectric vibrating piece is slightly pressed. The adhesive is cured. At that time, a sufficient amount of the adhesive is applied to ensure the adhesive strength and to ensure the electrical connection between the extraction electrode and the connection electrode. For this reason, the conductive adhesive spreads along the back surface (adhesion-side surface) of the piezoelectric vibrating piece due to the pressing of the piezoelectric vibrating piece. As a result, there is a problem that the CI value (crystal impedance value) of the piezoelectric vibrating piece is increased and the vibration characteristics are deteriorated.
  • the piezoelectric vibrating piece is generally thicker at the center than the peripheral part by beveling or the like.
  • the gap between the central portion and the package body becomes narrower than the peripheral portion when mounted on the package body. Therefore, the adhesive tends to spread toward the central portion (vibrating portion) of the piezoelectric vibrating piece, and the CI value tends to be deteriorated.
  • An object of the present invention is to provide a piezoelectric device package and a piezoelectric device that are capable of suppressing spreading toward the outside and preventing the deterioration of the CI value of the piezoelectric vibrating piece.
  • a package for a piezoelectric device having a package body that holds a piezoelectric vibrating piece, and a connection electrode that is electrically connected to an excitation electrode formed on the piezoelectric vibrating piece. And a notch portion in a state where the vibration portion side of the piezoelectric vibrating piece held by the package body is notched.
  • the notch portion may be formed by notching linearly in a direction intersecting with the direction from the connection electrode toward the center portion of the vibration portion. Further, the notch may be formed by linearly notching one corner close to the vibrating portion among the four corners of the substantially rectangular connection electrode. Further, the connection electrode may be formed such that the end on the excitation electrode side is separated from the excitation electrode by a predetermined distance.
  • the package body may include a base and a step portion formed on the base, and the connection electrode may be formed on the step portion.
  • the present invention is a piezoelectric device including the above-described piezoelectric device package and a piezoelectric vibrating piece including an excitation electrode that is held on the package body by a conductive adhesive and is electrically connected to the connection electrode.
  • the piezoelectric vibrating piece may be formed such that the vibration part on which the excitation electrode is formed is thicker than the peripheral part. Further, the piezoelectric vibrating piece may have a curved surface on the surface bonded to the package body.
  • the conductive adhesive is restricted from spreading toward the vibrating portion of the piezoelectric vibrating piece by the notch portion of the connection electrode. Therefore, it is possible to reduce an increase in the CI value of the piezoelectric vibrating piece and to provide a high-quality piezoelectric device.
  • FIG. 1A and 1B show an example of a piezoelectric device including the piezoelectric device package of FIG. 1, in which FIG. 1A is a plan view, and FIG. It is a top view which shows the electrically conductive adhesive on a connection electrode, (a) is before adhesion
  • FIG. 1A and 1B show an example of a piezoelectric device including the piezoelectric device package of FIG. 1, in which FIG. 1A is a plan view, and FIG. It is a top view which shows the electrically conductive adhesive on a connection electrode, (a) is before adhesion
  • FIG. 9 is a plan view of a principal part showing first to third modified examples of connection electrodes.
  • FIG. 10 is a plan view of a principal part showing fourth to sixth modified examples of connection electrodes. It is sectional drawing which shows the 1st modification of the package for piezoelectric devices, and a piezoelectric device. It is sectional drawing which shows the 2nd modification of the package for piezoelectric devices, and a piezoelectric device.
  • XYZ coordinate system a plane parallel to the surface of the piezoelectric vibrating piece is defined as an XZ plane.
  • the longitudinal direction is expressed as the X direction
  • the direction orthogonal to the X direction is expressed as the Z direction.
  • a direction perpendicular to the XZ plane is expressed as a Y direction.
  • the direction of the arrow in the figure is the + direction
  • the direction opposite to the arrow direction is the ⁇ direction.
  • FIG. 1 shows a package 10 for a piezoelectric device according to the embodiment.
  • FIG. 2A is a plan view of the piezoelectric device 100
  • FIG. 1B is a cross-sectional view taken along the line AA in FIG. is there.
  • the cover (lid) 30 and the seal ring 60 are shown in a transparent manner.
  • the piezoelectric device package 10 holds and accommodates a piezoelectric vibrating piece 50 described later in a package body 10a.
  • the package main body 10a has a base 20 and a cover 30 (see FIG. 2B).
  • the base 20 is formed in a substantially rectangular shape having a short side in the Z direction and a long side in the X direction when viewed from the Y direction.
  • a recess 21 and a joint surface 22 surrounding the recess 21 are formed on the surface of the base 20 (+ Y side surface).
  • the recess 21 is used as a cavity (a space for accommodating a piezoelectric vibrating piece) 40.
  • a bottom portion 21a and a step portion 21b are formed in the concave portion 21, a bottom portion 21a and a step portion 21b are formed.
  • the step portion 21b is formed so as to surround the bottom portion 21a, and is formed so as to protrude in the + Y direction with respect to the bottom portion 21a.
  • a predetermined step distance in the Y direction
  • the distance of the step may be set according to the height of an electronic device 80 or the like (see FIG. 7) described later.
  • the base 20 is formed of a ceramic material that is inexpensive and easy to form, and for example, glass-ceramic or alumina ceramic is used.
  • the base 20 may be made of glass, silicon, resin, metal or the like instead of such a ceramic material. The same applies to the modifications described below.
  • the base 20 includes a first ceramic portion 20a, a second ceramic portion 20b disposed on the upper side (+ Y side) of the first ceramic portion 20a, and an upper side of the second ceramic portion 20b. And a third ceramic portion 20c disposed on the (+ Y side).
  • the base 20 is formed in a state where the first to third ceramic portions 20a to 20c are laminated.
  • the first ceramic part 20 a is a plate-like member and forms the bottom part 21 c of the base 20.
  • the second and third ceramic parts 20b and 20c are frame-like members from which the part forming the cavity 40 is removed.
  • the second ceramic portion 20b is a member that forms the step portion 21b, and the thickness (the length in the Y direction) of the second ceramic portion 20b becomes the height (the length in the Y direction) of the step portion 21b. ing.
  • the base 20 is not limited to such a laminated structure, and may be formed integrally, for example.
  • the first to third ceramic portions 20a to 20c all have the same thickness and are formed of the same type of ceramic material. However, some or all of these may be formed from different thicknesses or different types of ceramic materials.
  • the base 20 is not limited to the above-described configuration, and may be a shape such as a square, a circle, an ellipse, or an oval as viewed from the Y direction. Further, the base 20 may not be provided with the recess 21. Further, the step 21 b may not be provided in the recess 21. Further, the stepped portion 21b is not limited to the formation of a rectangular region when viewed from the Y direction, and for example, a region such as a square or a circle when viewed from the Y direction may be formed. A plurality of stepped portions 21 b may be formed in the base 20. Further, the base 20 may be provided with a castellation formed by, for example, cutting out a corner portion or a part of a side surface along the Y direction.
  • connection electrodes 23 and 24 are formed on the surface on the + Y side of the stepped portion 21b.
  • the connection electrodes 23 and 24 are arranged side by side in the Z direction. Further, the connection electrode 23 and the connection electrode 24 are arranged so as to be symmetric with respect to a straight line that passes through the central portion O of the vibration part 51 and is parallel to the X axis.
  • the connection electrodes 23 and 24 are bonded to the peripheral portion 52 on the ⁇ X side of the back surface (the surface on the ⁇ Y side) of the piezoelectric vibrating piece 50 via the conductive adhesives 71 and 72. Accordingly, the piezoelectric vibrating piece 50 is held on the base 20 and the connection electrodes 23 and 24 are electrically connected to excitation electrodes 53 and 54, which will be described later, respectively.
  • connection electrodes 23 and 24 are provided with cutout portions 25 and 26 in a state in which the vibration portion 51 side of the piezoelectric vibrating piece 50 held by the piezoelectric device package 10 is cut out.
  • the notch portion 25 includes one corner portion (+ X and ⁇ X) close to the vibration portion 51 among four corner portions from a substantially rectangular region including the connection electrodes 23 and 24 and having sides parallel to the X direction and the Z direction. (Z-side corner) is cut out.
  • the notch 26 is formed in a state in which one corner (the corner on the + X and + Z sides) close to the vibration part 51 is cut out from four corners from a substantially rectangular region.
  • the cutout portions 25 and 26 are formed by cutting out linearly in directions D3 and D4 that intersect the directions D1 and D2 from the connection electrodes 23 and 24 toward the central portion O of the vibration portion 51, respectively. Note that the directions D3 and D4 may be set in directions orthogonal to the directions D1 and D2.
  • connection electrodes 23 and 24 are formed to be separated from the excitation electrodes 53 and 54 by predetermined distances W1 and W2, respectively.
  • the predetermined distances W1 and W2 are set to the same value, but may be different values.
  • the + Z side end of the connection electrode 23 and the ⁇ Z side end of the connection electrode 24 are formed up to the laminated portion of the third ceramic portion 20c, respectively.
  • connection electrodes 23 and 24 are formed in a shape that is symmetrical with respect to a straight line that passes through the central portion O and is parallel to the X axis. Accordingly, the connection electrodes 23 and 24 are formed in substantially the same area.
  • the connection electrodes 23 and 24 are formed by the same metal film configuration. As a configuration of such a metal film, nickel (Ni) is formed on the surface of the step portion 21b on the + Y side as a base layer for improving adhesion with the base 20, and the main electrode layer is formed on the base layer. A two-layer structure in which gold (Au) is formed is employed.
  • each metal film is set to, for example, 2 to 6 ⁇ m for the nickel (Ni) layer and 0.3 to 0.7 ⁇ m for the gold (Au) layer. Due to the thickness of the metal film, a step is generated between the surfaces of the connection electrodes 23 and 24 (the surface on the + Y side) and the surface of the stepped portion 21b.
  • connection electrodes 23 and 24 are formed by forming a conductive metal film by, for example, vacuum vapor deposition or sputter vapor deposition using a metal mask or the like.
  • the connection electrodes 23 and 24 may be formed by photolithography and etching, and are formed by plating the surface of the base layer formed by a printing method such as screen printing using a metal paste or a conductive filler. May be.
  • connection electrodes 23 and 24 is not limited to the above-described configuration.
  • the connection electrodes 23 and 24 when viewed from the Y direction, the connection electrodes 23 and 24 have a substantially rectangular shape in which the vibration part 51 side is cut out, but instead, a polygonal shape other than a square, a circular shape, a long shape, or the like. The shape may be a state in which the vibration part 51 side is cut out from a circular shape or an elliptical shape.
  • the connection electrodes 23 and 24 are not limited to the same area, and may be set to different areas.
  • the connection electrodes 23 and 24 are not limited to being arranged side by side in the Z direction, and may be arranged side by side in a direction inclined with respect to the Z direction, for example. About these matters, you may apply in the modification mentioned later.
  • the end portions (side portions) on the ⁇ X side of the connection electrodes 23 and 24 are arranged apart from the third ceramic portion 20c (see FIG. 2A). For example, up to the third ceramic portion 20c. It may be formed. Further, the + Z side end of the connection electrode 23 or the ⁇ Z side end of the connection electrode 24 is formed up to the third ceramic portion 20c. For example, it is formed so as to be separated from the third ceramic portion 20c. May be. Further, the notches 25 and 26 may not be formed on one of the connection electrodes 23 and 24. Note that the shape, size, and configuration of the connection electrodes 23 and 24 where the notches 25 and 26 are not formed are arbitrary.
  • connection electrodes 23 and 24 are not limited to being formed by the above-described metal film, and as an underlayer, tungsten (W), molybdenum (Mo), chromium (Cr), titanium (Ti), or Nickel chrome (NiCr), nickel titanium (NiTi), nickel tungsten (NiW) alloy, etc. may be adopted, and the main electrode layer is a metal such as silver (Ag) or copper (Cu), or these metals. An alloy containing or the like may be employed. Further, the configuration of the metal film is not limited to a two-layer structure, and may be a one-layer structure or a structure of three or more layers.
  • through electrodes 25a and 25b are formed in the base 20, through electrodes 25a and 25b are formed.
  • the through electrodes 25a and 25b are formed so as to penetrate the first and second ceramic portions 20a and 20b of the base 20 from the connection electrodes 23 and 24 in the ⁇ Y direction, respectively.
  • the through electrodes 25a and 25b are electrically connected to external electrodes 26a and 26b described later, respectively.
  • the through electrodes 25a and 25b are formed in a substantially truncated cone shape whose diameter gradually increases from the + Y side surface of the stepped portion 21b to the -Y direction.
  • the through electrodes 25a and 25b are formed, for example, by filling a through hole with silver (Ag) paste, but instead of this, metals such as gold (Au) and copper (Cu), or these metals are included.
  • a paste containing a conductor other than an alloy or metal may be filled, or a conductive metal film may be formed on the side surface of the through hole.
  • the through electrodes 25a and 25b are not limited to the above configuration, and may be, for example, a cylindrical shape or a prismatic shape. Further, part or all of the through electrodes 25a and 26b may not be provided. In this case, the above-described castellation may be provided on the base 20, and castellation electrodes for connecting the connection electrodes 23 and 24 and the external electrodes 26a and 26b may be formed on the surface of the castellation.
  • the external electrodes 26a to 26d are formed on the back surface of the base 20 (the surface on the -Y side).
  • the external electrodes 26a to 26d are each formed in a substantially rectangular shape when viewed from the Y direction, and are formed in the four corner regions on the back surface (the surface on the -Y side) of the base 20.
  • the external electrodes 26a and 26b are formed side by side in the Z direction in the region on the ⁇ X side, and are used as a pair of mounting terminals when mounted on another substrate or the like.
  • the external electrodes 26a and 26b are connected to the through electrodes 25a and 25b, respectively, and are electrically connected to the connection electrodes 23 and 24 through the through electrodes 25a and 25b.
  • the shape of the external electrodes 26a to 26d is not limited to a substantially rectangular shape, and may be, for example, a polygonal shape other than a square, a circular shape, an oval shape, or an elliptical shape.
  • the external electrodes 26c and 26d are dummy electrodes.
  • the external electrodes 26a to 26b have the same metal film configuration as the connection electrodes 23 and 24 described above, but may be different.
  • the external electrodes 26a to 26b are formed using the same method as the connection electrodes 23 and 24, but may be different.
  • the base 20 is joined to the joint surface 32 of the cover 30 via the seal ring 60 as shown in FIG.
  • the seal ring 60 is formed in a frame shape, and is joined to the joining surface 22 of the base 20 via a brazing material (not shown) such as silver brazing.
  • the seal ring 60 is formed from the same material as the cover 30, but a different material may be used.
  • the cover 30 is a substantially rectangular plate-like member having a short side in the Z direction and a long side in the X direction when viewed from the Y direction.
  • a metal material such as nickel (Ni), 42 alloy (Fe—Ni), kovar (Fe—Ni—Co), iron (Fe), copper (Cu), or the like is used.
  • the cover 30 is joined to the front surface (+ Y side surface) of the seal ring 60 at the back surface ( ⁇ Y side surface). As a result, a cavity 40 is formed inside the piezoelectric device package 10.
  • the cavity 40 is a gas atmosphere inert to the piezoelectric vibrating piece 50 such as a vacuum atmosphere or nitrogen.
  • the cover 30 is not limited to the above-described configuration.
  • the shape viewed from the Y direction may be various shapes other than a substantially rectangular shape.
  • the cover 30 may be made of ceramic, silicon, glass, resin, or the like, for example, instead of a metal material.
  • the cover 30 may be formed of the same material as the base 20.
  • a recess for forming the cavity 40 may be provided in a region surrounded by the bonding surface 32 on the back surface (the surface on the ⁇ Y side) of the cover 30.
  • the joining of the cover 30 and the base 20 is not limited to being performed using the seal ring 60, and may be joined via, for example, a brazing material, solder, various joining materials, or directly without using a joining material. It may be joined. In these cases, the seal ring 60 is not disposed on the joint surface 22 of the base 20.
  • the piezoelectric device 100 includes a piezoelectric device package 10 and a piezoelectric vibrating piece 50 as shown in FIG.
  • the piezoelectric device 100 is a piezoelectric vibrator.
  • the piezoelectric vibrating piece 50 is supported in a cantilevered state at the step portion 21 b of the base 20 and is accommodated in the cavity 40.
  • As the piezoelectric vibrating piece 50 for example, an AT-cut crystal vibrating piece is used.
  • the AT cut has an advantage that a good frequency characteristic can be obtained when the piezoelectric vibrator is used near room temperature.
  • an electric axis, a mechanical axis, and an optical axis are optical axes. This is a processing method of cutting out at an angle of 35 ° 15 ′ around the crystal axis.
  • the piezoelectric vibrating piece 50 is formed in a substantially rectangular shape with the X direction as a long side and the Z direction as a short side when viewed from the Y direction.
  • the piezoelectric vibrating piece 50 is formed to a size that can be accommodated in the cavity 40 of the package 10 for piezoelectric devices.
  • the front surface (+ Y side surface) and the back surface ( ⁇ Y side surface) of the piezoelectric vibrating piece 50 are formed in a curved surface, and the excitation electrodes 53 and 54 are formed.
  • the vibration part 51 is formed thicker than the peripheral part 52. Thus, by forming the vibration part 51 thicker than the peripheral part 52, it becomes possible to confine the vibration energy in the vibration part 51 as compared with a plate-like case.
  • Excitation electrodes 53 and 54 are formed on the front surface (+ Y side surface) and back surface ( ⁇ Y side surface) of the vibration part 51 of the piezoelectric vibrating piece 50, respectively.
  • an extraction electrode 55 extracted from the excitation electrode 53 in the ⁇ X direction is formed on the surface (+ Y side surface) of the piezoelectric vibrating piece 50.
  • the extraction electrode 55 is extracted from the excitation electrode 53 and then extracted to the back surface through the side surface of the piezoelectric vibrating piece 50.
  • an extraction electrode 56 that is similarly extracted from the excitation electrode 54 in the ⁇ X direction is formed.
  • the excitation electrodes 53 and 54 and the extraction electrodes 55 and 56 are made of, for example, a conductive metal film.
  • this metal film for example, chromium (Cr), titanium (Ti), nickel (Ni), nickel chrome (NiCr), nickel titanium (NiTi), nickel tungsten as an underlayer for improving adhesion to a crystal material.
  • Cr chromium
  • Ti titanium
  • Ni nickel
  • NiCr nickel chrome
  • NiTi nickel titanium
  • NiTi nickel tungsten
  • a two-layer structure in which a (NiW) alloy or the like is formed and a main electrode layer such as gold (Au) or silver (Ag) is formed on the underlayer is employed.
  • the piezoelectric vibrating piece 50 vibrates at a predetermined frequency when a predetermined voltage is applied to the excitation electrodes 53 and 54.
  • the extraction electrode 55 is electrically connected to the connection electrode 23 via the conductive adhesive 71, and the extraction electrode 56 is positioned in the ⁇ Z direction with respect to the conductive adhesive 72 (with respect to the conductive adhesive 71). .) Through the connection electrode 24. Accordingly, each of the excitation electrodes 53 and 54 is electrically connected to the external electrodes 26a and 26b via the extraction electrodes 55 and 56, the connection electrodes 23 and 24, and the through electrodes 25a and 25b.
  • the conductive adhesives 71 and 72 for example, a silicon-based conductive adhesive that is difficult to volatilize, has excellent workability, and does not easily deteriorate in performance even in a high-temperature atmosphere is used, but a polyimide-based, urethane-based, or epoxy-based adhesive is used. A conductive adhesive or the like may be used. Moreover, although the same kind of adhesive is used for each of the conductive adhesives 71 and 72, different kinds may be used.
  • the piezoelectric vibrating piece 50 is not limited to the above-described configuration, and for example, a quartz vibrating piece such as a BT cut, a GT cut, or an XT cut may be used.
  • the piezoelectric vibrating piece 50 is not limited to a quartz material, and lithium tantalate (LiTaO 3 ), lithium niobate (LiNbO 3 ), or the like may be used.
  • the piezoelectric vibrating piece 50 may have various shapes such as a polygonal shape other than a square when viewed from the Y direction, or may be a tuning fork type.
  • the piezoelectric vibrating piece 50 is not limited to the thickness of the vibrating portion 51 being thicker than that of the peripheral portion 52.
  • the piezoelectric vibrating piece 50 is a plate having a constant thickness (distance in the Y direction). There may be.
  • one or both of the front surface and the back surface of the piezoelectric vibrating piece 50 may not be formed in a curved shape.
  • a mesa having a shape that rises stepwise with respect to the peripheral portion 52 on one or both of the front surface and the back surface of the vibrating portion 51. A part may be formed. With this mesa portion, vibration energy can be confined in the vibration portion 51.
  • the mesa portion may be formed with a curved surface by a convex process or the like.
  • the base 20 is provided with a first sheet that multi-surfaces the first ceramic portion 20a, a second sheet that multi-surfaces the second ceramic portion 20b, and a third sheet that multi-surfaces the third ceramic portion 20c.
  • first to third sheets are, for example, green sheets having a predetermined thickness.
  • the green sheet is formed from a mixture of ceramic powder, binder, and the like whose main raw material is glass or alumina, for example.
  • a through hole is formed at a predetermined position of the first sheet.
  • a through hole is formed at a predetermined position of the second sheet, and a predetermined shape is pulled out by a press or the like to form the stepped portion 21b.
  • a predetermined shape of the third sheet is pulled out by a press or the like to form the cavity 40.
  • the first sheet, the second sheet, and the third sheet are aligned and laminated in this order, then cut and individualized, and further heated and fired.
  • the through hole is filled with silver paste or the like, and the through electrode 25a or the like is formed.
  • connection electrodes 23 and 24 are formed.
  • external electrodes 26a to 26d are formed in a predetermined region on the back surface (the surface on the -Y side) of the base 20.
  • the connection electrodes 23 and 24 may be formed by a photolithography method and an etching method, or a printing method such as screen printing.
  • the cover 30 is prepared with a plate-like metal member having a predetermined thickness. Subsequently, the cover 30 is formed by cutting the metal member into a predetermined substantially rectangular shape. The cover 30 is joined to the base 20 via the seal ring 60 after mounting the piezoelectric vibrating piece 50 on the base 20.
  • a piezoelectric wafer (quartz wafer) cut out from a quartz crystal body with a predetermined thickness by AT cut is used.
  • This piezoelectric wafer is cut into a predetermined size to form a crystal piece.
  • the quartz piece is formed into a curved surface in which the central portion of the front surface and the back surface is thicker than the peripheral portion by beveling or the like. This central portion corresponds to the vibrating portion 51, and the peripheral portion corresponds to the peripheral portion 52. Whether or not the crystal piece is beveled is arbitrary.
  • excitation electrodes 53 and 54 and extraction electrodes 55 and 56 are formed in predetermined regions on the surface, and the piezoelectric vibration piece 50 is completed.
  • the excitation electrodes 53 and 54 and the extraction electrodes 55 and 56 are formed by forming a metal film on the surface of the crystal piece in the order of the base layer and the main electrode layer by sputtering deposition or vacuum deposition through a metal mask.
  • the excitation electrodes 53 and 54 and the extraction electrodes 55 and 56 are formed of, for example, the same material and integrally.
  • the excitation electrode 53 and the like may be formed by a photolithography method, a method using etching, a printing method, or the like.
  • a mesa portion may be formed on the front surface or the back surface of the piezoelectric wafer by photolithography and etching. The mesa portion is formed at a position corresponding to the vibrating portion 51 of the piezoelectric vibrating piece 50.
  • the piezoelectric vibrating piece 50 is held on the connection electrodes 23 and 24 formed on the stepped portion 21 b of the base 20 by the conductive adhesives 71 and 72.
  • 3A and 3B are plan views showing the conductive adhesive 72 on the connection electrode 24, where FIG. 3A is before the piezoelectric vibrating piece 50 is bonded, and FIG. 3B is after the piezoelectric vibrating piece 50 is bonded.
  • conductive adhesives 71 and 72 are disposed on the surfaces of the connection electrodes 23 and 24 of the base 20, respectively.
  • the conductive adhesives 71 and 72 are applied by, for example, a dispenser.
  • an image of the applied conductive adhesives 71 and 72 may be acquired by a camera or the like, and it may be confirmed that a predetermined amount is disposed at a predetermined position of the connection electrodes 23 and 24.
  • the applied conductive adhesives 71 and 72 have a substantially circular shape when viewed from the Y direction on the connection electrodes 23 and 24, as shown in FIG.
  • the piezoelectric vibrating piece 50 is placed in a state where the extraction electrodes 55 and 56 of the piezoelectric vibrating piece 50 and the connection electrodes 23 and 24 are aligned, and is slightly pressed in the ⁇ Y direction.
  • the conductive adhesives 71 and 72 are deformed so as to be crushed in the Y direction, and spread along the back surfaces of the connection electrodes 23 and 24 and the piezoelectric vibrating piece 50.
  • the vibrating portion 51 is thicker than the peripheral portion 52. Therefore, the distance between the connection electrodes 23 and 24 and the back surface of the piezoelectric vibrating piece 50 is directed toward the center O of the vibrating portion 51. Gradually narrowing. For this reason, the conductive adhesives 71 and 72 expand in the direction in which the interval is narrow, but the cutout portions 25 and 26 are formed in that direction, so that the cutout portions are formed as shown in FIG. 26 will change direction and expand. As a result, as shown in FIG. 3B, the conductive adhesive 72 is blocked by the notch 26, and when viewed from the Y direction, the conductive adhesive 72 has a mountain shape or a substantially trapezoidal shape with the notch 26 as a bottom.
  • connection electrode 23 is the same as the conductive adhesive 72 described above. Since the connection electrodes 23 and 24 have a predetermined height with respect to the stepped portion 21b, the conductive adhesives 71 and 72 are restricted from spreading in the direction of the vibrating portion 51 with the notches 25 and 26 as boundaries. It is thought that the effect is also added.
  • the conductive adhesives 71 and 72 are heated or cured at room temperature, and the bonding of the piezoelectric vibrating piece 50 to the base 20 is completed.
  • the connection electrodes 23 and 24 and the extraction electrodes 55 and 56 are electrically connected via the conductive adhesives 71 and 72.
  • the conductive adhesives 71 and 72 may be applied to the extraction electrodes 55 and 56 of the piezoelectric vibrating piece 50 instead of being applied to the connection electrodes 23 and 24.
  • the conductive adhesive 71 , 72, the state at the time of bonding is the same as described above.
  • the cover 30 is joined to the seal ring 60 by seam welding in a chamber formed in a vacuum atmosphere or a gas atmosphere inert to the piezoelectric vibrating piece 50 such as nitrogen.
  • the piezoelectric vibrating piece 50 is accommodated in the cavity 40 of the piezoelectric device package 10 in an airtight state, and the piezoelectric device 100 is completed.
  • connection electrodes 23 and 24 include the notches 25 and 26, the conductive adhesives 71 and 72 are spread in the direction of the vibration part 51 by the notches 25 and 26. Can be regulated. Thereby, it can prevent that the conductive adhesives 71 and 72 adhere to the vibration part 51, and raise CI value.
  • the notches 25 and 26 are linearly formed in directions D3 and D4 intersecting with the directions D1 and D2 from the connection electrodes 23 and 24 toward the center O of the vibration part 51, respectively. By directing the flow of the conductive adhesives 71 and 72 in the directions D3 and D4, it is possible to reliably prevent the conductive adhesives 71 and 72 from adhering to the vibration part 51. Further, since the connection electrodes 23 and 24 are formed in a substantially rectangular shape excluding the notches 25 and 26, a sufficient connection area can be ensured for the extraction electrodes 55 and 56.
  • connection electrodes 23 and 24 have end portions 23a and 24a on the side of the excitation electrodes 53 and 54 that are separated from the excitation electrodes 53 and 54 by a predetermined distance W1 and W2, respectively.
  • the connection electrodes 23 and 24 are formed on the step portion 21 b, whereby a predetermined interval is formed between the piezoelectric vibrating piece 50 and the bottom portion 21 a, and the conductive adhesives 71 and 72 adhere to the vibration portion 51. Can be prevented.
  • the conductive adhesives 71 and 72 are attached to the vibrating portion 51 by the cutout portions 25 and 26.
  • the conductive adhesives 71 and 72 are attached to the vibrating portion 51 by the cutout portions 25 and 26.
  • the conductive adhesives 71 and 72 are attached to the vibrating portion 51 by the cutout portions 25 and 26.
  • connection electrodes 23 and 24 are formed up to the laminated portion of the third ceramic portion 20c.
  • the connection electrodes 23 and 24 are formed.
  • the image is acquired by a camera or the like, it is possible to reduce occurrence of erroneous recognition of the position, shape, and the like.
  • FIG. 4A and 4B are graphs showing CI values with respect to temperature changes for the piezoelectric device 100 according to the present embodiment and the comparative example.
  • FIG. 4A is a measurement result of the piezoelectric device 100
  • FIG. 4B is a measurement result of the comparative example. Is shown. 4A and 4B, the vertical axis represents the CI value, and the horizontal axis represents the temperature. Note that the measured number of samples of the piezoelectric device 100 and the comparative example is 43 and 50, respectively.
  • a rectangular electrode having no notch is used as the connection electrode, and the other configuration is the same as that of the piezoelectric device 100.
  • the CI value of the piezoelectric device 100 gradually increased when the temperature was gradually decreased.
  • the CI value increases as the temperature decreases.
  • the CI value rapidly increases around 20 ° C. and compared with the piezoelectric device 100.
  • the CI value was confirmed to be high. From these results, when the notches 25 and 26 are formed in the connection electrodes 23 and 24, the increase in the CI value is suppressed, for example, at a low temperature, and the vibration characteristics are improved as compared with the case where the notches 25 and 26 are not formed. confirmed.
  • FIG. 5 shows first to third modifications of the connection electrode
  • FIG. 6 shows fourth to sixth modifications of the connection electrode. 5 and 6 both show the connection electrode on the ⁇ Z side on the stepped portion 21b, but a symmetrical connection electrode is formed on the + Z side unless otherwise specified.
  • the connection electrodes 124, 224, and 324 according to the first to third modifications are all formed from a substantially rectangular region having sides parallel to the X and Z directions. Of the four corners, one corner (+ X and + Z side corners) close to the vibration part 51 is cut out.
  • the shape of the notch 126 is a polygonal line having two straight portions parallel to the X direction and the Z direction, respectively. Yes.
  • the lengths of the straight portions are the same, but may be different.
  • such a linear part may be formed along the direction inclined with respect to the X direction or the Z direction, and may have three or more.
  • a part of the shape of the notch 126 may include a curved portion.
  • the shape of the notch 226 is an arc shape facing inward.
  • the curvature of the arc may be set arbitrarily.
  • the shape of the notch 226 may be a shape including such an inward arc.
  • the shape of the notch 326 is an arc shape facing outward.
  • the curvature of the arc may be set arbitrarily.
  • the shape of the cutout portion 326 may be a shape including such an arc toward the outside.
  • what combined the circular arc toward the inner side and the circular arc toward the outer side may be used.
  • connection electrodes 424, 524, and 624 according to the fourth to sixth modifications are all formed from a substantially rectangular region having sides parallel to the X and Z directions. It is formed with the + X side cut out.
  • the shape of the notch 426 is linear.
  • the shape of the cutout portion 426 may be a polygonal line shape having a plurality of straight portions instead of a straight shape, or may be a shape including a curved portion.
  • connection electrode 524 has a curved portion in which the shape of the cutout portion 526 is retracted inward.
  • the curved portion changes the curvature depending on the position, but may be set to an arc having a certain curvature.
  • the shape of the notch 526 may be a shape including such a curved portion.
  • connection electrode 624 is a curved portion in which the shape of the cutout portion 626 projects outward.
  • the curved portion changes the curvature depending on the position, but may be set to an arc having a certain curvature. Further, the shape of the notch 626 may include such a curved portion.
  • connection electrodes 124 to 624 have the same effects as the connection electrode 24 described above.
  • the connection electrode 424 and the like are separated from the vibration part 51, and the conductive adhesive 72 is prevented from reaching the vibration part 51. can do.
  • FIG. 7 is a cross-sectional view showing a piezoelectric device package 210 and a piezoelectric device 200 according to a first modification.
  • the same or equivalent components as those of the piezoelectric device package 10 and the piezoelectric device 100 described above are denoted by the same reference numerals and description thereof is omitted or simplified.
  • the piezoelectric device package 210 holds and accommodates the piezoelectric vibrating piece 50 in the package body 210a.
  • the package body 210 a has a base 220 and a cover 30.
  • An electronic device 80 is mounted on the base 220.
  • six connection electrodes 227 are formed on the surface (the surface on the + Y side) of the bottom portion 21a of the base 220.
  • the connection electrodes 227 are formed in regions corresponding to the positions of the six terminals of the electronic device 80, respectively.
  • connection electrode 227 is connected to a routing electrode (not shown).
  • the routing electrode is connected to the connection electrodes 23 and 24 and the external electrodes 26a to 26d.
  • a routing electrode is, for example, an electrode penetrating the first ceramic part 20a or the second ceramic part 20b, or a corner or a side part of the first or second ceramic part 20a, 20b along the Y direction.
  • a castellation electrode or the like to be formed is used.
  • two of the six connection electrodes 227 are electrically connected to the excitation electrodes 53 and 54 via the routing electrodes and connection electrodes 23 and 24.
  • the remaining four connection electrodes 227 are electrically connected to the external electrodes 26a to 26d through the routing electrodes.
  • the piezoelectric device 200 includes a piezoelectric device package 210, a piezoelectric vibrating piece 50, and an electronic device 80 as shown in FIG.
  • the piezoelectric device 200 is an oscillator.
  • the electronic device 80 is held on the surface on the + Y side of the bottom 21a of the base 220 by, for example, bumps 90.
  • the bump 90 for example, a gold bump, a solder bump, a solder ball, or the like is used.
  • the electronic device 80 may be an integrated circuit such as an IC or an LSI. Further, the number of terminals of the electronic device 80 may be other than six. In this case, the connection electrode 227 is formed corresponding to the number of terminals. The same applies to connection electrodes 327 described later.
  • the manufacturing method of the piezoelectric device 200 (piezoelectric device package 210) is almost the same as the manufacturing method of the piezoelectric device 100 (piezoelectric device package 10) described above.
  • the electronic device 80 is mounted on the bottom 21a while aligning the connection electrode 227 and the terminal 81 with a chip mounter, for example.
  • the gap between the surface of the bottom 21a and the electronic device 80 may be filled with resin or the like.
  • FIG. 8 is a cross-sectional view showing a piezoelectric device package 310 and a piezoelectric device 300 according to a second modification.
  • the piezoelectric device package 310 holds and accommodates the piezoelectric vibrating piece 50 in a package body 310a.
  • the package main body 310 a has a base 320 and a cover 30.
  • the base 320 has a configuration in which a fourth ceramic part 320a is laminated on the ⁇ Y side of the first ceramic part 20a.
  • the fourth ceramic portion 320a has the same thickness as the first to third ceramic portions 20a and the like, and is formed of the same kind of ceramic material.
  • the fourth ceramic portion 320a may be formed with a thickness different from that of the first to third ceramic portions 20a and the like.
  • the fourth ceramic portion 320a is formed with a thickness according to the height (distance in the Y direction) of the electronic device 80. May be. Further, it may be formed of a ceramic material different from that of the first to third ceramic portions 20a.
  • the fourth ceramic portion 320a is a frame-like member having a central portion penetrating in the Y direction, and a recess 321 is formed on the back surface (the surface on the -Y side) of the base 320.
  • the recess 321 is formed so that the electronic device 80 can be accommodated.
  • six connection electrodes 327 are formed on the surface at the ⁇ Y side of the recess 321.
  • the connection electrodes 327 are formed in regions corresponding to the positions of the six terminals of the electronic device 80, respectively.
  • substantially rectangular external electrodes 326a to 326d are formed at four corners on the surface surrounding the recess 321 on the ⁇ Y side of the fourth ceramic portion 320a.
  • connection electrode 327 is connected to a routing electrode (not shown).
  • the routing electrode is connected to the connection electrodes 23 and 24 and the external electrodes 326a to 326d.
  • a routing electrode is, for example, in an electrode penetrating the first ceramic part 20a or the second ceramic part 220b, or in a corner part or a side part such as the first or second ceramic part 20a, 20b, 320a.
  • a castellation electrode formed along the Y direction is used.
  • two of the six connection electrodes 327 are electrically connected to the excitation electrodes 53 and 54 via the routing electrodes and connection electrodes 23 and 24.
  • the remaining four connection electrodes 327 are electrically connected to the external electrodes 326a to 326d through routing electrodes.
  • the piezoelectric device 300 includes a piezoelectric device package 310, a piezoelectric vibrating piece 50, and an electronic device 80.
  • the piezoelectric device 300 is an oscillator.
  • the electronic device 80 is disposed on the ⁇ Y side surface of the recess 321 formed on the ⁇ Y side of the base 320.
  • the electronic device 80 is held in the piezoelectric device package 310 by, for example, bumps 90.
  • the six terminals 81 of the electronic device 80 are electrically connected to the connection electrodes 327 through the bumps 90, respectively.
  • the method for manufacturing the piezoelectric device 300 is substantially the same as the method for manufacturing the piezoelectric device 100 described above.
  • the fourth ceramic portion 320a is formed as follows. First, a fourth sheet for multi-face preparation is prepared. This fourth sheet is a green sheet having a predetermined thickness. Subsequently, the area
  • the piezoelectric device package and the piezoelectric device of the present invention have been described above, the present invention is not limited to the above description, and various modifications can be made without departing from the gist of the present invention. For example, you may combine a part of structure of above-described embodiment and modification.
  • the piezoelectric devices 100 to 300 are not limited to piezoelectric vibrators or oscillators, and may be filters, SAW devices, or the like.
  • a device such as a thermistor may be accommodated in the cavity 40.
  • this piezoelectric device has a temperature compensation function, for example.
  • the accuracy of the temperature compensation function can be improved.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)

Abstract

In the present invention, when installing a piezoelectric oscillation piece in a main package body, the spread of adhesive to an oscillation unit is mitigated by restricting the direction in which the adhesive spreads along the rear surface of the piezoelectric oscillation piece, and the CI value of the piezoelectric oscillation piece is prevented from worsening. A piezoelectric device package (10) has a main package body (10a) for holding the piezoelectric oscillation piece (50), and connective electrodes (23, 24) which are electrically connected to excitation electrodes (53, 54) formed on the piezoelectric oscillation piece (50) are provided in the main package body (10a). The connective electrodes (23, 24) are provided with cutouts (25, 26) formed in the oscillation part (51) side of the piezoelectric oscillation piece (50) held in the main package body (10a).

Description

圧電デバイス用パッケージ及び圧電デバイスPackage for piezoelectric device and piezoelectric device
　本発明は、圧電デバイス用パッケージ及び圧電デバイスに関する。 The present invention relates to a piezoelectric device package and a piezoelectric device.
　携帯端末や携帯電話などの電子機器では、圧電振動子や発振器などの圧電デバイスが搭載されている。圧電デバイスとしては、パッケージ本体内のキャビティーに水晶振動片などの圧電振動片が収容されて構成される。このような圧電デバイスの構成の一例としては、振動部に形成された励振電極から引き出された引出電極を備える圧電振動片と、接続電極が形成されたパッケージ本体とを有し、引出電極と接続電極との間に配置される導電性接着剤により圧電振動片をパッケージ本体に保持するものが知られている（例えば、特許文献１参照）。 Electronic devices such as mobile terminals and mobile phones are equipped with piezoelectric devices such as piezoelectric vibrators and oscillators. The piezoelectric device is configured by accommodating a piezoelectric vibrating piece such as a quartz vibrating piece in a cavity in the package body. As an example of the configuration of such a piezoelectric device, the piezoelectric device includes a piezoelectric vibrating piece including an extraction electrode extracted from an excitation electrode formed in the vibration unit, and a package body in which a connection electrode is formed, and is connected to the extraction electrode. There is known a method in which a piezoelectric vibrating piece is held on a package body by a conductive adhesive disposed between electrodes (see, for example, Patent Document 1).
特開２００３－３１８６９２号公報JP 2003-318692 A
　圧電振動片をパッケージ本体に保持する際、例えば、予め接続電極の表面に導電性の接着剤を塗布し、この接着剤上に圧電振動片を載置し、圧電振動片を若干押圧した状態で接着剤を硬化させている。その際、接着剤は、接着強度の確保や、引出電極と接続電極との電気的な接続を確保するために十分な量が塗布される。そのため、圧電振動片の押圧により、導電性接着剤は、圧電振動片の裏面（接着側の表面）に沿って拡がってしまう。その結果、圧電振動片のＣＩ値（クリスタルインピーダンス値）が大きくなり、振動特性を悪化させるといった問題が生じる。 When holding the piezoelectric vibrating piece on the package body, for example, a conductive adhesive is previously applied to the surface of the connection electrode, the piezoelectric vibrating piece is placed on the adhesive, and the piezoelectric vibrating piece is slightly pressed. The adhesive is cured. At that time, a sufficient amount of the adhesive is applied to ensure the adhesive strength and to ensure the electrical connection between the extraction electrode and the connection electrode. For this reason, the conductive adhesive spreads along the back surface (adhesion-side surface) of the piezoelectric vibrating piece due to the pressing of the piezoelectric vibrating piece. As a result, there is a problem that the CI value (crystal impedance value) of the piezoelectric vibrating piece is increased and the vibration characteristics are deteriorated.
　また、圧電振動片は、振動部での振動を閉じ込めるため、ベベル加工等により周辺部より中央部分を厚くすることが一般的である。このような中央部分が肉厚の圧電振動片では、パッケージ本体への搭載時に、中央部分とパッケージ本体との隙間が周辺部に対して狭くなる。そのため、接着剤は、圧電振動片の中央部分（振動部）に向けて拡がる傾向を示し、ＣＩ値の悪化を招きやすくなる。 In addition, in order to confine the vibration at the vibrating part, the piezoelectric vibrating piece is generally thicker at the center than the peripheral part by beveling or the like. In such a piezoelectric vibrating piece having a thick central portion, the gap between the central portion and the package body becomes narrower than the peripheral portion when mounted on the package body. Therefore, the adhesive tends to spread toward the central portion (vibrating portion) of the piezoelectric vibrating piece, and the CI value tends to be deteriorated.
　以上のような事情に鑑み、本発明では、圧電振動片をパッケージ本体に搭載する際、圧電振動片の裏面に沿って拡がる接着剤の流れの方向を規制することにより、接着剤が振動部に向けて拡がるのを抑制し、圧電振動片のＣＩ値の悪化を防止することが可能な圧電デバイス用パッケージ及び圧電デバイスを提供することを目的とする。 In view of the circumstances as described above, in the present invention, when the piezoelectric vibrating piece is mounted on the package body, the adhesive is applied to the vibrating portion by regulating the direction of the flow of the adhesive spreading along the back surface of the piezoelectric vibrating piece. An object of the present invention is to provide a piezoelectric device package and a piezoelectric device that are capable of suppressing spreading toward the outside and preventing the deterioration of the CI value of the piezoelectric vibrating piece.
　本発明では、圧電振動片を保持するパッケージ本体を有し、圧電振動片に形成された励振電極と電気的に接続される接続電極をパッケージ本体に備える圧電デバイス用パッケージであって、接続電極は、パッケージ本体に保持される圧電振動片の振動部側を切り欠いた状態の切り欠き部を備える。 According to the present invention, there is provided a package for a piezoelectric device having a package body that holds a piezoelectric vibrating piece, and a connection electrode that is electrically connected to an excitation electrode formed on the piezoelectric vibrating piece. And a notch portion in a state where the vibration portion side of the piezoelectric vibrating piece held by the package body is notched.
　また、切り欠き部は、接続電極から振動部の中心部に向かう方向に対して交差する方向に直線状に切り欠いて形成されてもよい。また、切り欠き部は、略矩形状の接続電極の４つの角部のうち振動部に近い１つの角部を直線状に切り欠いて形成されてもよい。また、接続電極は、励振電極側の端部が励振電極に対して所定距離だけ離れるように形成されてもよい。また、パッケージ本体は、ベースと、ベースに形成された段部と、を有し、接続電極は、段部に形成されてもよい。 Further, the notch portion may be formed by notching linearly in a direction intersecting with the direction from the connection electrode toward the center portion of the vibration portion. Further, the notch may be formed by linearly notching one corner close to the vibrating portion among the four corners of the substantially rectangular connection electrode. Further, the connection electrode may be formed such that the end on the excitation electrode side is separated from the excitation electrode by a predetermined distance. The package body may include a base and a step portion formed on the base, and the connection electrode may be formed on the step portion.
　また、本発明は、上記した圧電デバイス用パッケージと、導電性接着剤によってパッケージ本体に保持されかつ接続電極と電気的に接続される励振電極を備える圧電振動片と、を含む圧電デバイスである。 Further, the present invention is a piezoelectric device including the above-described piezoelectric device package and a piezoelectric vibrating piece including an excitation electrode that is held on the package body by a conductive adhesive and is electrically connected to the connection electrode.
　また、圧電振動片は、励振電極が形成される振動部の厚さが周辺部に対して厚く形成されてもよい。また、圧電振動片は、パッケージ本体に接着される側の表面が曲面状であってもよい。 Further, the piezoelectric vibrating piece may be formed such that the vibration part on which the excitation electrode is formed is thicker than the peripheral part. Further, the piezoelectric vibrating piece may have a curved surface on the surface bonded to the package body.
　本発明によれば、圧電振動片とパッケージ本体との接着時に、導電性接着剤は、接続電極の切り欠き部によって圧電振動片の振動部に向けて拡がることが規制される。これにより、圧電振動片のＣＩ値が上昇するのを低減でき、品質の高い圧電デバイスを提供することができる。 According to the present invention, when the piezoelectric vibrating piece is bonded to the package body, the conductive adhesive is restricted from spreading toward the vibrating portion of the piezoelectric vibrating piece by the notch portion of the connection electrode. Thereby, it is possible to reduce an increase in the CI value of the piezoelectric vibrating piece and to provide a high-quality piezoelectric device.
実施形態に係る圧電デバイス用パッケージの一例を示す平面図である。It is a top view which shows an example of the package for piezoelectric devices which concerns on embodiment. 図１の圧電デバイス用パッケージを備える圧電デバイスの一例を示し、（ａ）は平面図、（ｂ）は（ａ）のＡ－Ａ線に沿った断面図である。1A and 1B show an example of a piezoelectric device including the piezoelectric device package of FIG. 1, in which FIG. 1A is a plan view, and FIG. 接続電極上の導電性接着剤を示す平面図であり、（ａ）は圧電振動片の接着前、（ｂ）は圧電振動片の接着後である。It is a top view which shows the electrically conductive adhesive on a connection electrode, (a) is before adhesion | attachment of a piezoelectric vibrating piece, (b) is after adhesion | attachment of a piezoelectric vibrating piece. 圧電振動片の特性を示すグラフであり、（ａ）実施形態に係る圧電デバイス、（ｂ）は比較例に係る圧電デバイスである。It is a graph which shows the characteristic of a piezoelectric vibrating piece, (a) The piezoelectric device which concerns on embodiment, (b) is the piezoelectric device which concerns on a comparative example. 接続電極の第１～第３変形例を示す要部平面図である。FIG. 9 is a plan view of a principal part showing first to third modified examples of connection electrodes. 接続電極の第４～第６変形例を示す要部平面図である。FIG. 10 is a plan view of a principal part showing fourth to sixth modified examples of connection electrodes. 圧電デバイス用パッケージ及び圧電デバイスの第１変形例を示す断面図である。It is sectional drawing which shows the 1st modification of the package for piezoelectric devices, and a piezoelectric device. 圧電デバイス用パッケージ及び圧電デバイスの第２変形例を示す断面図である。It is sectional drawing which shows the 2nd modification of the package for piezoelectric devices, and a piezoelectric device.
　以下、本発明の実施形態について図面を参照しながら説明する。ただし、本発明はこれに限定されるものではない。また、以下の実施形態を説明するため、図面においては一部分を大きくまたは強調して記載するなど適宜縮尺を変更して表現している。また、図面においてハッチングした部分は、電極及び導電性接着剤を表している。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to this. In order to describe the following embodiments, the drawings are expressed by appropriately changing the scale, for example, by partially enlarging or emphasizing them. Further, hatched portions in the drawings represent electrodes and conductive adhesives.
　以下の各図において、ＸＹＺ座標系を用いて図中の方向を説明する。このＸＹＺ座標系においては、圧電振動片の表面に平行な平面をＸＺ平面とする。このＸＺ平面において長手方向をＸ方向と表記し、Ｘ方向に直交する方向をＺ方向と表記する。ＸＺ平面に垂直な方向（圧電振動片の厚さ方向）はＹ方向と表記する。Ｘ方向、Ｙ方向及びＺ方向のそれぞれは、図中の矢印の方向が＋方向であり、矢印の方向とは反対の方向が－方向であるものとして説明する。 In the following figures, directions in the figures will be described using the XYZ coordinate system. In this XYZ coordinate system, a plane parallel to the surface of the piezoelectric vibrating piece is defined as an XZ plane. In this XZ plane, the longitudinal direction is expressed as the X direction, and the direction orthogonal to the X direction is expressed as the Z direction. A direction perpendicular to the XZ plane (thickness direction of the piezoelectric vibrating piece) is expressed as a Y direction. In each of the X direction, the Y direction, and the Z direction, the direction of the arrow in the figure is the + direction, and the direction opposite to the arrow direction is the − direction.
＜圧電デバイス用パッケージ及び圧電デバイス＞
　実施形態に係る圧電デバイス用パッケージ及び圧電デバイスの一例について、図面を参照して説明する。図１は、実施形態に係る圧電デバイス用パッケージ１０を示しており、図２（ａ）は、圧電デバイス１００の平面図、（ｂ）は（ａ）のＡ－Ａ線に沿った断面図である。なお、図１及び図２（ａ）では、カバー（リッド）３０及びシールリング６０を透過して表わしている。図１及び図２に示すように、圧電デバイス用パッケージ１０は、後述する圧電振動片５０をパッケージ本体１０ａに保持しかつ収容する。パッケージ本体１０ａは、ベース２０と、カバー３０（図２（ｂ）参照）とを有している。 <Piezoelectric device package and piezoelectric device>
An example of a piezoelectric device package and a piezoelectric device according to an embodiment will be described with reference to the drawings. FIG. 1 shows a package 10 for a piezoelectric device according to the embodiment. FIG. 2A is a plan view of the piezoelectric device 100, and FIG. 1B is a cross-sectional view taken along the line AA in FIG. is there. In FIGS. 1 and 2A, the cover (lid) 30 and the seal ring 60 are shown in a transparent manner. As shown in FIGS. 1 and 2, the piezoelectric device package 10 holds and accommodates a piezoelectric vibrating piece 50 described later in a package body 10a. The package main body 10a has a base 20 and a cover 30 (see FIG. 2B).
　ベース２０は、Ｙ方向から見てＺ方向を短辺、Ｘ方向を長辺とする略矩形状に形成される。ベース２０の表面（＋Ｙ側の面）には、凹部２１と、凹部２１を囲む接合面２２とが形成される。凹部２１は、キャビティー（圧電振動片を収容する空間）４０として用いられる。凹部２１には、底部２１ａと段部２１ｂとが形成される。段部２１ｂは、底部２１ａを囲むように形成され、底部２１ａに対して＋Ｙ方向に突出するように形成される。これにより、底部２１ａと段部２１ｂの表面とは、所定の段差（Ｙ方向の距離）が形成される。この段差の距離は、後述する電子デバイス８０等（図７参照）の高さに応じて設定されてもよい。 The base 20 is formed in a substantially rectangular shape having a short side in the Z direction and a long side in the X direction when viewed from the Y direction. A recess 21 and a joint surface 22 surrounding the recess 21 are formed on the surface of the base 20 (+ Y side surface). The recess 21 is used as a cavity (a space for accommodating a piezoelectric vibrating piece) 40. In the concave portion 21, a bottom portion 21a and a step portion 21b are formed. The step portion 21b is formed so as to surround the bottom portion 21a, and is formed so as to protrude in the + Y direction with respect to the bottom portion 21a. Thereby, a predetermined step (distance in the Y direction) is formed between the bottom 21a and the surface of the step 21b. The distance of the step may be set according to the height of an electronic device 80 or the like (see FIG. 7) described later.
　ベース２０は、安価で形成が容易なセラミック材料から形成され、例えば、ガラス－セラミックやアルミナセラミック等が用いられる。なお、ベース２０は、このようなセラミック材料に代えて、ガラス、シリコン、樹脂、金属等が用いられてもよい。以下に説明する変形例についても同様である。 The base 20 is formed of a ceramic material that is inexpensive and easy to form, and for example, glass-ceramic or alumina ceramic is used. The base 20 may be made of glass, silicon, resin, metal or the like instead of such a ceramic material. The same applies to the modifications described below.
　ベース２０は、図２（ｂ）に示すように、第１セラミック部２０ａと、第１セラミック部２０ａの上側（＋Ｙ側）に配置された第２セラミック部２０ｂと、第２セラミック部２０ｂの上側（＋Ｙ側）に配置された第３セラミック部２０ｃと、から構成される。ベース２０は、これら第１～３セラミック部２０ａ～２０ｃが積層された状態で形成される。第１セラミック部２０ａは板状部材であり、ベース２０の底部２１ｃを形成する。第２及び第３セラミック部２０ｂ、２０ｃは、キャビティー４０を形成する部分が抜かれた枠状の部材である。また、第２セラミック部２０ｂは、段部２１ｂを形成する部材であり、第２セラミック部２０ｂの厚さ（Ｙ方向の長さ）が段部２１ｂの高さ（Ｙ方向の長さ）となっている。なお、ベース２０は、このような積層構造に限定されず、例えば一体として形成されてもよい。 As shown in FIG. 2B, the base 20 includes a first ceramic portion 20a, a second ceramic portion 20b disposed on the upper side (+ Y side) of the first ceramic portion 20a, and an upper side of the second ceramic portion 20b. And a third ceramic portion 20c disposed on the (+ Y side). The base 20 is formed in a state where the first to third ceramic portions 20a to 20c are laminated. The first ceramic part 20 a is a plate-like member and forms the bottom part 21 c of the base 20. The second and third ceramic parts 20b and 20c are frame-like members from which the part forming the cavity 40 is removed. The second ceramic portion 20b is a member that forms the step portion 21b, and the thickness (the length in the Y direction) of the second ceramic portion 20b becomes the height (the length in the Y direction) of the step portion 21b. ing. Note that the base 20 is not limited to such a laminated structure, and may be formed integrally, for example.
　第１～３セラミック部２０ａ～２０ｃは、全て同一の厚さを有し、かつ同種類のセラミック材料から形成される。ただし、これらの一部又は全部は、異なる厚さあるいは異なる種類のセラミック材料から形成されてもよい。 The first to third ceramic portions 20a to 20c all have the same thickness and are formed of the same type of ceramic material. However, some or all of these may be formed from different thicknesses or different types of ceramic materials.
　ベース２０は、上記した構成に限定されず、例えば、Ｙ方向から見たときの形状として、正方形、円形、楕円形、長円形等の形状であってもよい。また、ベース２０には、凹部２１が設けられなくてもよい。また、凹部２１において、段部２１ｂは設けられなくてもよい。また、段部２１ｂは、Ｙ方向から見て矩形状の領域が形成されることに限定されず、例えば、Ｙ方向から見て正方形や円形等の領域が形成されるものでもよい。また、段部２１ｂは、ベース２０において複数が形成されてもよい。また、ベース２０には、例えば角部あるいは側面の一部をＹ方向に沿って切り欠いて形成されるキャスタレーションが設けられてもよい。 The base 20 is not limited to the above-described configuration, and may be a shape such as a square, a circle, an ellipse, or an oval as viewed from the Y direction. Further, the base 20 may not be provided with the recess 21. Further, the step 21 b may not be provided in the recess 21. Further, the stepped portion 21b is not limited to the formation of a rectangular region when viewed from the Y direction, and for example, a region such as a square or a circle when viewed from the Y direction may be formed. A plurality of stepped portions 21 b may be formed in the base 20. Further, the base 20 may be provided with a castellation formed by, for example, cutting out a corner portion or a part of a side surface along the Y direction.
　図１に示すように、段部２１ｂの＋Ｙ側の表面には、接続電極２３、２４が形成される。接続電極２３、２４は、それぞれＺ方向に並んで配置される。また、接続電極２３と接続電極２４とは、振動部５１の中心部Ｏを通りかつＸ軸に平行な直線に対して対称となるように配置される。接続電極２３、２４は、図２に示すように、導電性接着剤７１、７２を介して、圧電振動片５０の裏面（－Ｙ側の面）の－Ｘ側の周辺部５２と接合する。これにより、ベース２０に圧電振動片５０が保持されるとともに、接続電極２３、２４は、それぞれ後述する励振電極５３、５４と電気的に接続される。 As shown in FIG. 1, connection electrodes 23 and 24 are formed on the surface on the + Y side of the stepped portion 21b. The connection electrodes 23 and 24 are arranged side by side in the Z direction. Further, the connection electrode 23 and the connection electrode 24 are arranged so as to be symmetric with respect to a straight line that passes through the central portion O of the vibration part 51 and is parallel to the X axis. As shown in FIG. 2, the connection electrodes 23 and 24 are bonded to the peripheral portion 52 on the −X side of the back surface (the surface on the −Y side) of the piezoelectric vibrating piece 50 via the conductive adhesives 71 and 72. Accordingly, the piezoelectric vibrating piece 50 is held on the base 20 and the connection electrodes 23 and 24 are electrically connected to excitation electrodes 53 and 54, which will be described later, respectively.
　接続電極２３、２４は、圧電デバイス用パッケージ１０に保持される圧電振動片５０の振動部５１側を切り欠いた状態の切り欠き部２５、２６をそれぞれ備えている。切り欠き部２５は、接続電極２３、２４を含んでＸ方向及びＺ方向に平行な辺を有する略矩形の領域から、４つの角部のうち振動部５１に近い１つの角部（＋Ｘかつ－Ｚ側の角部）を切り欠いた状態で形成される。切り欠き部２６も同様に、略矩形の領域から４つの角部のうち振動部５１に近い１つの角部（＋Ｘかつ＋Ｚ側の角部）を切り欠いた状態で形成される。切り欠き部２５、２６は、それぞれ、接続電極２３、２４から振動部５１の中心部Ｏに向かう方向Ｄ１、Ｄ２に対して交差する方向Ｄ３、Ｄ４に直線状に切り欠いて形成される。なお、方向Ｄ３、Ｄ４は、方向Ｄ１、Ｄ２に対して直交する方向に設定されてもよい。 The connection electrodes 23 and 24 are provided with cutout portions 25 and 26 in a state in which the vibration portion 51 side of the piezoelectric vibrating piece 50 held by the piezoelectric device package 10 is cut out. The notch portion 25 includes one corner portion (+ X and −X) close to the vibration portion 51 among four corner portions from a substantially rectangular region including the connection electrodes 23 and 24 and having sides parallel to the X direction and the Z direction. (Z-side corner) is cut out. Similarly, the notch 26 is formed in a state in which one corner (the corner on the + X and + Z sides) close to the vibration part 51 is cut out from four corners from a substantially rectangular region. The cutout portions 25 and 26 are formed by cutting out linearly in directions D3 and D4 that intersect the directions D1 and D2 from the connection electrodes 23 and 24 toward the central portion O of the vibration portion 51, respectively. Note that the directions D3 and D4 may be set in directions orthogonal to the directions D1 and D2.
　接続電極２３、２４の励振電極５３、５４側（＋Ｘ側）の端部（辺部）は、励振電極５３、５４に対してそれぞれ所定距離Ｗ１、Ｗ２だけ離れるように形成される。所定距離Ｗ１、Ｗ２は同一の値に設定されるが、異なる値であってもよい。また、接続電極２３の＋Ｚ側の端部及び接続電極２４の－Ｚ側の端部は、それぞれ第３セラミック部２０ｃの積層部分まで形成される。 The end portions (side portions) on the excitation electrodes 53 and 54 side (+ X side) of the connection electrodes 23 and 24 are formed to be separated from the excitation electrodes 53 and 54 by predetermined distances W1 and W2, respectively. The predetermined distances W1 and W2 are set to the same value, but may be different values. Further, the + Z side end of the connection electrode 23 and the −Z side end of the connection electrode 24 are formed up to the laminated portion of the third ceramic portion 20c, respectively.
　接続電極２３、２４は、中心部Ｏを通りかつＸ軸に平行な直線に対して対称となる形状に形成される。従って、接続電極２３、２４は、ほぼ同一の面積に形成される。また、接続電極２３、２４は、同一の金属膜の構成により形成される。このような金属膜の構成としては、段部２１ｂの＋Ｙ側の表面に、ベース２０との密着性を高める下地層としてニッケル（Ｎｉ）が成膜され、この下地層の上に主電極層として金（Ａｕ）が成膜された２層構造が採用される。また、それぞれの金属膜の膜厚は、例えば、ニッケル（Ｎｉ）の層が２～６μｍ、金（Ａｕ）の層が０．３～０．７μｍに設定される。この金属膜の膜厚により、接続電極２３、２４の表面（＋Ｙ側の面）と段部２１ｂの表面との間には段差が生じる。 The connection electrodes 23 and 24 are formed in a shape that is symmetrical with respect to a straight line that passes through the central portion O and is parallel to the X axis. Accordingly, the connection electrodes 23 and 24 are formed in substantially the same area. The connection electrodes 23 and 24 are formed by the same metal film configuration. As a configuration of such a metal film, nickel (Ni) is formed on the surface of the step portion 21b on the + Y side as a base layer for improving adhesion with the base 20, and the main electrode layer is formed on the base layer. A two-layer structure in which gold (Au) is formed is employed. The thickness of each metal film is set to, for example, 2 to 6 μm for the nickel (Ni) layer and 0.3 to 0.7 μm for the gold (Au) layer. Due to the thickness of the metal film, a step is generated between the surfaces of the connection electrodes 23 and 24 (the surface on the + Y side) and the surface of the stepped portion 21b.
　接続電極２３、２４は、例えばメタルマスク等を用いた真空蒸着やスパッタ蒸着等により導電性の金属膜が成膜されて形成される。なお、接続電極２３、２４は、フォトリソグラフィー法及びエッチングにより形成されてもよく、金属ペーストや導電性フィラーを用いてスクリーン印刷などの印刷手法により形成された下地層の表面にめっきを施して形成されてもよい。 The connection electrodes 23 and 24 are formed by forming a conductive metal film by, for example, vacuum vapor deposition or sputter vapor deposition using a metal mask or the like. The connection electrodes 23 and 24 may be formed by photolithography and etching, and are formed by plating the surface of the base layer formed by a printing method such as screen printing using a metal paste or a conductive filler. May be.
　なお、接続電極２３、２４の形状は、上記した構成に限定されない。例えば、接続電極２３、２４は、Ｙ方向から見た場合、略矩形状から振動部５１側を切り欠いた形状となっているが、これに代えて、四角以外の多角形状、円形状、長円形状、又は楕円形状などの形状から振動部５１側を切り欠いた状態の形状であってもよい。また、接続電極２３、２４は、同一の面積であることに限定されず、互いに異なる面積に設定されてもよい。また、接続電極２３、２４は、Ｚ方向に並んで配置されることに限定されず、例えば、Ｚ方向に対して傾斜する方向に並んで配置されてもよい。これらの事項については、後述する変形例において適用されてもよい。 In addition, the shape of the connection electrodes 23 and 24 is not limited to the above-described configuration. For example, when viewed from the Y direction, the connection electrodes 23 and 24 have a substantially rectangular shape in which the vibration part 51 side is cut out, but instead, a polygonal shape other than a square, a circular shape, a long shape, or the like. The shape may be a state in which the vibration part 51 side is cut out from a circular shape or an elliptical shape. Further, the connection electrodes 23 and 24 are not limited to the same area, and may be set to different areas. Further, the connection electrodes 23 and 24 are not limited to being arranged side by side in the Z direction, and may be arranged side by side in a direction inclined with respect to the Z direction, for example. About these matters, you may apply in the modification mentioned later.
　また、接続電極２３、２４の－Ｘ側の端部（辺部）は、第３セラミック部２０ｃ（図２（ａ）参照）から離間して配置されるが、例えば、第３セラミック部２０ｃまで形成されてもよい。また、接続電極２３の＋Ｚ側の端部または接続電極２４の－Ｚ側の端部は、第３セラミック部２０ｃまで形成されるが、例えば、第３セラミック部２０ｃからそれぞれ離間するように形成されてもよい。また、接続電極２３、２４の一方には、切り欠き部２５、２６が形成されなくてもよい。なお、切り欠き部２５、２６が形成されない接続電極２３、２４の形状、大きさ、及び構成については、任意である。 The end portions (side portions) on the −X side of the connection electrodes 23 and 24 are arranged apart from the third ceramic portion 20c (see FIG. 2A). For example, up to the third ceramic portion 20c. It may be formed. Further, the + Z side end of the connection electrode 23 or the −Z side end of the connection electrode 24 is formed up to the third ceramic portion 20c. For example, it is formed so as to be separated from the third ceramic portion 20c. May be. Further, the notches 25 and 26 may not be formed on one of the connection electrodes 23 and 24. Note that the shape, size, and configuration of the connection electrodes 23 and 24 where the notches 25 and 26 are not formed are arbitrary.
　また、接続電極２３、２４は、上記した金属膜により形成されることに限定されず、下地層としては、タングステン（Ｗ）や、モリブデン（Ｍｏ）、クロム（Ｃｒ）、チタン（Ｔｉ）、あるいはニッケルクロム（ＮｉＣｒ）や、ニッケルチタン（ＮｉＴｉ）、ニッケルタングステン（ＮｉＷ）合金などが採用されてもよく、主電極層としては、銀（Ａｇ）や銅（Ｃｕ）などの金属、あるいはこれらの金属を含む合金などが採用されてもよい。また、金属膜の構成は、２層構造に限定されず、１層構造あるいは３層以上の構造であってもよい。 Further, the connection electrodes 23 and 24 are not limited to being formed by the above-described metal film, and as an underlayer, tungsten (W), molybdenum (Mo), chromium (Cr), titanium (Ti), or Nickel chrome (NiCr), nickel titanium (NiTi), nickel tungsten (NiW) alloy, etc. may be adopted, and the main electrode layer is a metal such as silver (Ag) or copper (Cu), or these metals. An alloy containing or the like may be employed. Further, the configuration of the metal film is not limited to a two-layer structure, and may be a one-layer structure or a structure of three or more layers.
　ベース２０には、貫通電極２５ａ、２５ｂが形成される。貫通電極２５ａ、２５ｂは、それぞれ、接続電極２３、２４からベース２０の第１及び第２セラミック部２０ａ、２０ｂを－Ｙ方向に貫通して形成される。貫通電極２５ａ、２５ｂは、それぞれ後述する外部電極２６ａ、２６ｂと電気的に接続する。 In the base 20, through electrodes 25a and 25b are formed. The through electrodes 25a and 25b are formed so as to penetrate the first and second ceramic portions 20a and 20b of the base 20 from the connection electrodes 23 and 24 in the −Y direction, respectively. The through electrodes 25a and 25b are electrically connected to external electrodes 26a and 26b described later, respectively.
　貫通電極２５ａ、２５ｂは、段部２１ｂの＋Ｙ側の面から－Ｙ方向にかけて徐々に口径が拡がる略円錐台状に形成される。貫通電極２５ａ、２５ｂは、例えば銀（Ａｇ）ペーストが貫通孔に充填されて形成されるが、これに代えて、金（Ａｕ）、銅（Ｃｕ）などの金属、もしくは、これらの金属を含む合金、金属以外の導体を含んだペーストが充填されてもよく、あるいは、貫通孔の側面に導電性の金属膜が成膜されて形成されてもよい。 The through electrodes 25a and 25b are formed in a substantially truncated cone shape whose diameter gradually increases from the + Y side surface of the stepped portion 21b to the -Y direction. The through electrodes 25a and 25b are formed, for example, by filling a through hole with silver (Ag) paste, but instead of this, metals such as gold (Au) and copper (Cu), or these metals are included. A paste containing a conductor other than an alloy or metal may be filled, or a conductive metal film may be formed on the side surface of the through hole.
　貫通電極２５ａ、２５ｂは、上記の構成に限定されず、例えば円柱形状や角柱形状であってもよい。また、このような貫通電極２５ａ、２６ｂの一部あるいは全部は、設けられなくてもよい。この場合、ベース２０に上記したキャスタレーションが設けられ、キャスタレーションの表面に、接続電極２３、２４と外部電極２６ａ、２６ｂとを接続するキャスタレーション電極が形成されてもよい。 The through electrodes 25a and 25b are not limited to the above configuration, and may be, for example, a cylindrical shape or a prismatic shape. Further, part or all of the through electrodes 25a and 26b may not be provided. In this case, the above-described castellation may be provided on the base 20, and castellation electrodes for connecting the connection electrodes 23 and 24 and the external electrodes 26a and 26b may be formed on the surface of the castellation.
　ベース２０の裏面（－Ｙ側の面）には、４つの外部電極２６ａ～２６ｄが形成される。外部電極２６ａ～２６ｄは、それぞれＹ方向から見て略矩形状に形成されており、ベース２０の裏面（－Ｙ側の面）の４つの角部側の領域に形成されている。外部電極２６ａ、２６ｂは、－Ｘ側の領域にＺ方向に並んで形成され、他の基板等に実装される際の一対の実装端子として用いられる。外部電極２６ａ、２６ｂは、それぞれ貫通電極２５ａ、２５ｂに接続されており、これら貫通電極２５ａ、２５ｂを介して接続電極２３、２４と電気的に接続されている。なお、外部電極２６ａ～２６ｄの形状は、略矩形状に限定されず、例えば四角以外の多角形状、円形状、長円形状、楕円形状であってもよい。なお、外部電極２６ｃ、２６ｄは、ダミー電極である。 Four external electrodes 26a to 26d are formed on the back surface of the base 20 (the surface on the -Y side). The external electrodes 26a to 26d are each formed in a substantially rectangular shape when viewed from the Y direction, and are formed in the four corner regions on the back surface (the surface on the -Y side) of the base 20. The external electrodes 26a and 26b are formed side by side in the Z direction in the region on the −X side, and are used as a pair of mounting terminals when mounted on another substrate or the like. The external electrodes 26a and 26b are connected to the through electrodes 25a and 25b, respectively, and are electrically connected to the connection electrodes 23 and 24 through the through electrodes 25a and 25b. The shape of the external electrodes 26a to 26d is not limited to a substantially rectangular shape, and may be, for example, a polygonal shape other than a square, a circular shape, an oval shape, or an elliptical shape. The external electrodes 26c and 26d are dummy electrodes.
　外部電極２６ａ～２６ｂは、上記した接続電極２３、２４と同一の金属膜の構成であるが、異なってもよい。また、外部電極２６ａ～２６ｂの形成についても、接続電極２３、２４と同様の方法が用いられるが、異なってもよい。 The external electrodes 26a to 26b have the same metal film configuration as the connection electrodes 23 and 24 described above, but may be different. The external electrodes 26a to 26b are formed using the same method as the connection electrodes 23 and 24, but may be different.
　ベース２０は、図２（ｂ）に示すように、シールリング６０を介してカバー３０の接合面３２と接合される。シールリング６０は、枠状に形成され、ベース２０の接合面２２に、例えば銀ろうなどのろう材（不図示）を介して接合される。シールリング６０は、カバー３０と同一の材料から形成されるが、異なる材料が用いられてもよい。 The base 20 is joined to the joint surface 32 of the cover 30 via the seal ring 60 as shown in FIG. The seal ring 60 is formed in a frame shape, and is joined to the joining surface 22 of the base 20 via a brazing material (not shown) such as silver brazing. The seal ring 60 is formed from the same material as the cover 30, but a different material may be used.
　カバー３０は、Ｙ方向から見てＺ方向を短辺、Ｘ方向を長辺とする略矩形状の板状部材である。カバー３０としては、例えばニッケル（Ｎｉ）、４２アロイ（Ｆｅ－Ｎｉ）、コバール（Ｆｅ－Ｎｉ－Ｃｏ）、鉄（Ｆｅ）、銅（Ｃｕ）などの金属材料が用いられる。カバー３０は、裏面（－Ｙ側の面）がシールリング６０の表面（＋Ｙ側の面）に接合される。これにより、圧電デバイス用パッケージ１０の内部にはキャビティー４０が形成される。キャビティー４０は、真空雰囲気あるいは窒素などの圧電振動片５０に対して不活性なガス雰囲気となっている。 The cover 30 is a substantially rectangular plate-like member having a short side in the Z direction and a long side in the X direction when viewed from the Y direction. As the cover 30, for example, a metal material such as nickel (Ni), 42 alloy (Fe—Ni), kovar (Fe—Ni—Co), iron (Fe), copper (Cu), or the like is used. The cover 30 is joined to the front surface (+ Y side surface) of the seal ring 60 at the back surface (−Y side surface). As a result, a cavity 40 is formed inside the piezoelectric device package 10. The cavity 40 is a gas atmosphere inert to the piezoelectric vibrating piece 50 such as a vacuum atmosphere or nitrogen.
　なお、カバー３０は上記した構成に限定されず、例えばＹ方向から見た形状は、略矩形以外の種々の形状であってよい。また、カバー３０は、金属材料に代えて、例えば、セラミックスや、シリコン、ガラス、樹脂などが用いられてもよい。また、カバー３０は、ベース２０と同一の材料により形成されてもよい。また、カバー３０の裏面（－Ｙ側の面）の接合面３２に囲まれた領域に、キャビティー４０を形成するための凹部が設けられてもよい。 Note that the cover 30 is not limited to the above-described configuration. For example, the shape viewed from the Y direction may be various shapes other than a substantially rectangular shape. The cover 30 may be made of ceramic, silicon, glass, resin, or the like, for example, instead of a metal material. Further, the cover 30 may be formed of the same material as the base 20. In addition, a recess for forming the cavity 40 may be provided in a region surrounded by the bonding surface 32 on the back surface (the surface on the −Y side) of the cover 30.
　カバー３０とベース２０との接合は、シールリング６０を用いて行うことに限定されず、例えば、ろう材、はんだ、各種接合材を介して接合されてもよく、接合材などを用いずに直接接合されてもよい。なお、これらの場合、ベース２０の接合面２２には、シールリング６０は配置されない。 The joining of the cover 30 and the base 20 is not limited to being performed using the seal ring 60, and may be joined via, for example, a brazing material, solder, various joining materials, or directly without using a joining material. It may be joined. In these cases, the seal ring 60 is not disposed on the joint surface 22 of the base 20.
　圧電デバイス１００は、図２に示すように、圧電デバイス用パッケージ１０と、圧電振動片５０と、を含んで構成される。この圧電デバイス１００は、圧電振動子である。圧電振動片５０は、ベース２０の段部２１ｂにおいて片持ちされた状態で支持され、キャビティー４０に収容される。圧電振動片５０は、例えばＡＴカットの水晶振動片が用いられる。ＡＴカットは、圧電振動子が常温付近で使用されるにあたって良好な周波数特性が得られる等の利点があり、人工水晶の３つの結晶軸である電気軸、機械軸及び光学軸のうち、光学軸に対して結晶軸周りに３５°１５′だけ傾いた角度で切り出す加工手法である。 The piezoelectric device 100 includes a piezoelectric device package 10 and a piezoelectric vibrating piece 50 as shown in FIG. The piezoelectric device 100 is a piezoelectric vibrator. The piezoelectric vibrating piece 50 is supported in a cantilevered state at the step portion 21 b of the base 20 and is accommodated in the cavity 40. As the piezoelectric vibrating piece 50, for example, an AT-cut crystal vibrating piece is used. The AT cut has an advantage that a good frequency characteristic can be obtained when the piezoelectric vibrator is used near room temperature. Among the three crystal axes of an artificial quartz crystal, an electric axis, a mechanical axis, and an optical axis are optical axes. This is a processing method of cutting out at an angle of 35 ° 15 ′ around the crystal axis.
　図２（ａ）に示すように、圧電振動片５０は、Ｙ方向から見てＸ方向を長辺かつＺ方向を短辺とする略矩形に形成される。圧電振動片５０は、圧電デバイス用パッケージ１０のキャビティー４０内に収容可能な寸法に形成される。また、図２（ｂ）に示すように、圧電振動片５０の表面（＋Ｙ側の面）及び裏面（－Ｙ側の面）は、曲面状に形成され、励振電極５３、５４が形成される振動部５１の厚さが周辺部５２に対して厚く形成される。このように、振動部５１が周辺部５２より厚く形成されることにより、板状の場合に比べて振動エネルギーを振動部５１に閉じ込めることが可能となる。 As shown in FIG. 2A, the piezoelectric vibrating piece 50 is formed in a substantially rectangular shape with the X direction as a long side and the Z direction as a short side when viewed from the Y direction. The piezoelectric vibrating piece 50 is formed to a size that can be accommodated in the cavity 40 of the package 10 for piezoelectric devices. Further, as shown in FIG. 2B, the front surface (+ Y side surface) and the back surface (−Y side surface) of the piezoelectric vibrating piece 50 are formed in a curved surface, and the excitation electrodes 53 and 54 are formed. The vibration part 51 is formed thicker than the peripheral part 52. Thus, by forming the vibration part 51 thicker than the peripheral part 52, it becomes possible to confine the vibration energy in the vibration part 51 as compared with a plate-like case.
　圧電振動片５０の振動部５１の表面（＋Ｙ側の面）及び裏面（－Ｙ側の面）には、それぞれ励振電極５３、５４が形成される。圧電振動片５０の表面（＋Ｙ側の面）には、励振電極５３から－Ｘ方向に引き出された引出電極５５が形成される。引出電極５５は、励振電極５３から引き出された後、圧電振動片５０の側面を通って裏面に引き出される。また、圧電振動片５０の裏面には、励振電極５４から同じく－Ｘ方向に引き出された引出電極５６が形成される。 Excitation electrodes 53 and 54 are formed on the front surface (+ Y side surface) and back surface (−Y side surface) of the vibration part 51 of the piezoelectric vibrating piece 50, respectively. On the surface (+ Y side surface) of the piezoelectric vibrating piece 50, an extraction electrode 55 extracted from the excitation electrode 53 in the −X direction is formed. The extraction electrode 55 is extracted from the excitation electrode 53 and then extracted to the back surface through the side surface of the piezoelectric vibrating piece 50. Further, on the back surface of the piezoelectric vibrating piece 50, an extraction electrode 56 that is similarly extracted from the excitation electrode 54 in the −X direction is formed.
　励振電極５３、５４及び引出電極５５、５６は、例えば導電性の金属膜により形成される。この金属膜としては、例えば水晶材との密着性を高める下地層としてクロム（Ｃｒ）や、チタン（Ｔｉ）、ニッケル（Ｎｉ）、あるいはニッケルクロム（ＮｉＣｒ）や、ニッケルチタン（ＮｉＴｉ）、ニッケルタングステン（ＮｉＷ）合金などが成膜され、この下地層の上に金（Ａｕ）や銀（Ａｇ）などの主電極層が成膜された２層構造が採用される。 The excitation electrodes 53 and 54 and the extraction electrodes 55 and 56 are made of, for example, a conductive metal film. As this metal film, for example, chromium (Cr), titanium (Ti), nickel (Ni), nickel chrome (NiCr), nickel titanium (NiTi), nickel tungsten as an underlayer for improving adhesion to a crystal material. A two-layer structure in which a (NiW) alloy or the like is formed and a main electrode layer such as gold (Au) or silver (Ag) is formed on the underlayer is employed.
　圧電振動片５０は、励振電極５３、５４に所定の電圧が印加されることにより所定の振動数で振動する。引出電極５５は、導電性接着剤７１を介して接続電極２３と電気的に接続され、引出電極５６は、導電性接着剤７２（導電性接着剤７１に対して－Ｚ方向に位置している。）を介して接続電極２４と電気的に接続される。従って、励振電極５３、５４のそれぞれは、引出電極５５、５６、接続電極２３、２４、及び貫通電極２５ａ、２５ｂを介して、外部電極２６ａ、２６ｂに電気的に接続される。 The piezoelectric vibrating piece 50 vibrates at a predetermined frequency when a predetermined voltage is applied to the excitation electrodes 53 and 54. The extraction electrode 55 is electrically connected to the connection electrode 23 via the conductive adhesive 71, and the extraction electrode 56 is positioned in the −Z direction with respect to the conductive adhesive 72 (with respect to the conductive adhesive 71). .) Through the connection electrode 24. Accordingly, each of the excitation electrodes 53 and 54 is electrically connected to the external electrodes 26a and 26b via the extraction electrodes 55 and 56, the connection electrodes 23 and 24, and the through electrodes 25a and 25b.
　導電性接着剤７１、７２としては、例えば揮発しにくく作業性に優れ、高温雰囲気下においても性能劣化が生じにくいシリコン系導電性接着剤が用いられるが、ポリイミド系、ウレタン系、あるいはエポキシ系の導電性接着剤などが用いられてもよい。また、導電性接着剤７１、７２には、それぞれ同一の種類の接着剤が用いられるが、異なる種類が用いられてもよい。 As the conductive adhesives 71 and 72, for example, a silicon-based conductive adhesive that is difficult to volatilize, has excellent workability, and does not easily deteriorate in performance even in a high-temperature atmosphere is used, but a polyimide-based, urethane-based, or epoxy-based adhesive is used. A conductive adhesive or the like may be used. Moreover, although the same kind of adhesive is used for each of the conductive adhesives 71 and 72, different kinds may be used.
　なお、圧電振動片５０は、上記した構成に限定されず、例えば、ＢＴカットやＧＴカットや、ＸＴカットなどの水晶振動片が用いられてもよい。また、圧電振動片５０は、水晶材に限定されず、タンタル酸リチウム（ＬｉＴａＯ３）やニオブ酸リチウム（ＬｉＮｂＯ３）などが用いられてもよい。また、圧電振動片５０は、Ｙ方向から見たときに四角以外の多角形状等、種々の形状であってもよく、音叉型であってもよい。 The piezoelectric vibrating piece 50 is not limited to the above-described configuration, and for example, a quartz vibrating piece such as a BT cut, a GT cut, or an XT cut may be used. The piezoelectric vibrating piece 50 is not limited to a quartz material, and lithium tantalate (LiTaO 3 ), lithium niobate (LiNbO 3 ), or the like may be used. The piezoelectric vibrating piece 50 may have various shapes such as a polygonal shape other than a square when viewed from the Y direction, or may be a tuning fork type.
　また、圧電振動片５０は、振動部５１の厚さが周辺部５２に対して厚く形成されることに限定されず、例えば、厚さ（Ｙ方向の距離）が一定に形成された板状であってもよい。また、圧電振動片５０の表面及び裏面の一方または双方が曲面状に形成されなくてもよい。また、圧電振動片５０の表面等が曲面状に形成されることに代えて、例えば、振動部５１の表面及び裏面の一方または双方に、周辺部５２に対して段階的に盛り上がった形状のメサ部が形成されてもよい。このメサ部により、振動エネルギーを振動部５１に閉じ込めることができる。また、メサ部は、コンベックス加工等により、表面が曲面状に形成されてもよい。 Further, the piezoelectric vibrating piece 50 is not limited to the thickness of the vibrating portion 51 being thicker than that of the peripheral portion 52. For example, the piezoelectric vibrating piece 50 is a plate having a constant thickness (distance in the Y direction). There may be. Further, one or both of the front surface and the back surface of the piezoelectric vibrating piece 50 may not be formed in a curved shape. Further, instead of forming the surface or the like of the piezoelectric vibrating piece 50 in a curved shape, for example, a mesa having a shape that rises stepwise with respect to the peripheral portion 52 on one or both of the front surface and the back surface of the vibrating portion 51. A part may be formed. With this mesa portion, vibration energy can be confined in the vibration portion 51. The mesa portion may be formed with a curved surface by a convex process or the like.
　次に、圧電デバイス用パッケージ１０及び圧電デバイス１００の製造方法の一例について説明する。ベース２０は、先ず、第１セラミック部２０ａを多面取りする第１シート、第２セラミック部２０ｂを多面取りする第２シート、第３セラミック部２０ｃを多面取りする第３シートが用意される。これらの第１～第３シートは、例えば、所定の厚さのグリーンシートが用いられる。グリーンシートは、例えばガラスやアルミナなどを主原料とするセラミック粉末やバインダーなどの混合物から形成される。 Next, an example of a method for manufacturing the piezoelectric device package 10 and the piezoelectric device 100 will be described. First, the base 20 is provided with a first sheet that multi-surfaces the first ceramic portion 20a, a second sheet that multi-surfaces the second ceramic portion 20b, and a third sheet that multi-surfaces the third ceramic portion 20c. These first to third sheets are, for example, green sheets having a predetermined thickness. The green sheet is formed from a mixture of ceramic powder, binder, and the like whose main raw material is glass or alumina, for example.
　続いて、第１シートの所定位置には貫通孔が形成される。第２シートの所定位置には、貫通孔が形成されるとともに、段部２１ｂを形成するためにプレス等により所定形状が抜かれる。第３シートは、キャビティー４０を形成するためにプレス等により所定形状が抜かれる。これら第１シート、第２シート、及び第３シートは、位置合わせされ、かつこの順で積層された後、切断されて個別化され、さらに加熱されて焼成される。なお、貫通孔には、銀ペースト等が充填され、貫通電極２５ａ等が形成される。 Subsequently, a through hole is formed at a predetermined position of the first sheet. A through hole is formed at a predetermined position of the second sheet, and a predetermined shape is pulled out by a press or the like to form the stepped portion 21b. A predetermined shape of the third sheet is pulled out by a press or the like to form the cavity 40. The first sheet, the second sheet, and the third sheet are aligned and laminated in this order, then cut and individualized, and further heated and fired. The through hole is filled with silver paste or the like, and the through electrode 25a or the like is formed.
　続いて、ベース２０の段部２１ｂの＋Ｙ側の面の所定の領域には、メタルマスクを介して、スパッタ蒸着または真空蒸着等によりニッケル（Ｎｉ）及び金（Ａｕ）の金属膜が、この順で成膜され、接続電極２３、２４が形成される。同様に、ベース２０の裏面（－Ｙ側の面）の所定の領域には、外部電極２６ａ～２６ｄが形成される。なお、接続電極２３、２４は、フォトリソグラフィー法及びエッチングによる手法や、スクリーン印刷などの印刷手法等が用いられてもよい点は上記のとおりである。 Subsequently, a metal film of nickel (Ni) and gold (Au) is formed in this order on a predetermined region of the surface on the + Y side of the step portion 21b of the base 20 by sputtering deposition or vacuum deposition through a metal mask. The connection electrodes 23 and 24 are formed. Similarly, external electrodes 26a to 26d are formed in a predetermined region on the back surface (the surface on the -Y side) of the base 20. As described above, the connection electrodes 23 and 24 may be formed by a photolithography method and an etching method, or a printing method such as screen printing.
　カバー３０は、先ず、所定の厚さに形成された板状の金属部材が用意される。続いて、この金属部材を所定の略矩形状に切断することによりカバー３０が形成される。カバー３０は、ベース２０に圧電振動片５０を搭載した後に、シールリング６０を介してベース２０に接合される。 First, the cover 30 is prepared with a plate-like metal member having a predetermined thickness. Subsequently, the cover 30 is formed by cutting the metal member into a predetermined substantially rectangular shape. The cover 30 is joined to the base 20 via the seal ring 60 after mounting the piezoelectric vibrating piece 50 on the base 20.
　圧電振動片５０は、先ず、水晶結晶体からＡＴカットにより所定の厚さで切り出された圧電ウェハ（水晶ウェハ）が用いられる。この圧電ウェハは、所定寸法に切断されて水晶片が形成される。水晶片は、ベベル加工等が施されることにより、表面及び裏面の中央部分が周辺部分より厚くなった曲面状に形成される。この中央部分は振動部５１に相当し、周辺部分は周辺部５２に相当する。なお、水晶片をベベル加工等するか否かは任意である。続いて、水晶片は、洗浄された後、表面の所定の領域に励振電極５３、５４及び引出電極５５、５６が形成されて、圧電振動片５０が完成する。 As the piezoelectric vibrating piece 50, first, a piezoelectric wafer (quartz wafer) cut out from a quartz crystal body with a predetermined thickness by AT cut is used. This piezoelectric wafer is cut into a predetermined size to form a crystal piece. The quartz piece is formed into a curved surface in which the central portion of the front surface and the back surface is thicker than the peripheral portion by beveling or the like. This central portion corresponds to the vibrating portion 51, and the peripheral portion corresponds to the peripheral portion 52. Whether or not the crystal piece is beveled is arbitrary. Subsequently, after the crystal piece is cleaned, excitation electrodes 53 and 54 and extraction electrodes 55 and 56 are formed in predetermined regions on the surface, and the piezoelectric vibration piece 50 is completed.
　励振電極５３、５４及び引出電極５５、５６は、水晶片の表面に、メタルマスクを介して、スパッタ蒸着や真空蒸着により、下地層、主電極層の順で金属膜が成膜されて形成される。励振電極５３、５４及び引出電極５５、５６は、例えば同一材料により、かつ一体的に形成される。なお、励振電極５３等は、フォトリソグラフィー法及びエッチングによる手法や、印刷手法等により形成されてもよい。また、水晶片に切断する前に、フォトリソグラフィー法及びエッチングによって圧電ウェハの表面や裏面にメサ部が形成されてもよい。メサ部は、圧電振動片５０の振動部５１に対応する位置に形成される。 The excitation electrodes 53 and 54 and the extraction electrodes 55 and 56 are formed by forming a metal film on the surface of the crystal piece in the order of the base layer and the main electrode layer by sputtering deposition or vacuum deposition through a metal mask. The The excitation electrodes 53 and 54 and the extraction electrodes 55 and 56 are formed of, for example, the same material and integrally. Note that the excitation electrode 53 and the like may be formed by a photolithography method, a method using etching, a printing method, or the like. Further, before cutting into crystal pieces, a mesa portion may be formed on the front surface or the back surface of the piezoelectric wafer by photolithography and etching. The mesa portion is formed at a position corresponding to the vibrating portion 51 of the piezoelectric vibrating piece 50.
　圧電振動片５０は、導電性接着剤７１、７２により、ベース２０の段部２１ｂに形成された接続電極２３、２４に保持される。図３は、接続電極２４上の導電性接着剤７２を示す平面図であり、（ａ）は圧電振動片５０の接着前、（ｂ）は圧電振動片５０の接着後である。先ず、ベース２０の接続電極２３、２４の表面には、それぞれ導電性接着剤７１、７２が配置される。導電性接着剤７１、７２は、例えばディスペンサーにより塗布される。その際、例えばカメラ等により、塗布された導電性接着剤７１、７２の画像が取得され、所定量が接続電極２３、２４の所定位置に配置されていることが確認されてもよい。なお、塗布された導電性接着剤７１、７２は、図３（ａ）に示すように、接続電極２３、２４上においてＹ方向から見て略円形状となっている。 The piezoelectric vibrating piece 50 is held on the connection electrodes 23 and 24 formed on the stepped portion 21 b of the base 20 by the conductive adhesives 71 and 72. 3A and 3B are plan views showing the conductive adhesive 72 on the connection electrode 24, where FIG. 3A is before the piezoelectric vibrating piece 50 is bonded, and FIG. 3B is after the piezoelectric vibrating piece 50 is bonded. First, conductive adhesives 71 and 72 are disposed on the surfaces of the connection electrodes 23 and 24 of the base 20, respectively. The conductive adhesives 71 and 72 are applied by, for example, a dispenser. At that time, for example, an image of the applied conductive adhesives 71 and 72 may be acquired by a camera or the like, and it may be confirmed that a predetermined amount is disposed at a predetermined position of the connection electrodes 23 and 24. The applied conductive adhesives 71 and 72 have a substantially circular shape when viewed from the Y direction on the connection electrodes 23 and 24, as shown in FIG.
　続いて、圧電振動片５０の引出電極５５、５６と、接続電極２３、２４とを位置合わせした状態で圧電振動片５０が載置され、－Ｙ方向に若干押圧される。導電性接着剤７１、７２は、Ｙ方向に潰れるように変形し、接続電極２３、２４及び圧電振動片５０の裏面に沿って拡がる。 Subsequently, the piezoelectric vibrating piece 50 is placed in a state where the extraction electrodes 55 and 56 of the piezoelectric vibrating piece 50 and the connection electrodes 23 and 24 are aligned, and is slightly pressed in the −Y direction. The conductive adhesives 71 and 72 are deformed so as to be crushed in the Y direction, and spread along the back surfaces of the connection electrodes 23 and 24 and the piezoelectric vibrating piece 50.
　圧電振動片５０は、振動部５１の厚さが周辺部５２に対して厚いため、接続電極２３、２４と圧電振動片５０の裏面との間隔は、振動部５１の中心部Ｏの方向に向けて徐々に狭くなっている。そのため、導電性接着剤７１、７２は、間隔が狭い方向に向けて拡がるが、その方向には切り欠き部２５、２６が形成されているので、図３（ａ）に示すように切り欠き部２６に沿って向きを変えて拡がることになる。その結果、図３（ｂ）に示すように、導電性接着剤７２は、切り欠き部２６にせき止められて、Ｙ方向から見ると、切り欠き部２６を底とする山形状または略台形状となる。接続電極２３に塗布された導電性接着剤７１についても、上記した導電性接着剤７２と同様である。なお、接続電極２３、２４は、段部２１ｂに対して所定高さを持つため、切り欠き部２５、２６を境界として導電性接着剤７１、７２が振動部５１の方向に拡がるのを規制する効果も加わっているものと考えられる。 In the piezoelectric vibrating piece 50, the vibrating portion 51 is thicker than the peripheral portion 52. Therefore, the distance between the connection electrodes 23 and 24 and the back surface of the piezoelectric vibrating piece 50 is directed toward the center O of the vibrating portion 51. Gradually narrowing. For this reason, the conductive adhesives 71 and 72 expand in the direction in which the interval is narrow, but the cutout portions 25 and 26 are formed in that direction, so that the cutout portions are formed as shown in FIG. 26 will change direction and expand. As a result, as shown in FIG. 3B, the conductive adhesive 72 is blocked by the notch 26, and when viewed from the Y direction, the conductive adhesive 72 has a mountain shape or a substantially trapezoidal shape with the notch 26 as a bottom. Become. The conductive adhesive 71 applied to the connection electrode 23 is the same as the conductive adhesive 72 described above. Since the connection electrodes 23 and 24 have a predetermined height with respect to the stepped portion 21b, the conductive adhesives 71 and 72 are restricted from spreading in the direction of the vibrating portion 51 with the notches 25 and 26 as boundaries. It is thought that the effect is also added.
　導電性接着剤７１、７２は、この状態で、加熱処理されあるいは常温で硬化し、圧電振動片５０のベース２０に対する接着は完了する。導電性接着剤７１、７２を介して、接続電極２３、２４と引出電極５５、５６とが電気的に接続される。なお、導電性接着剤７１、７２は、接続電極２３、２４に塗布されることに代えて、圧電振動片５０の引出電極５５、５６に塗布されてもよく、この場合の導電性接着剤７１、７２についても、接着時の状態は上記と同様である。 In this state, the conductive adhesives 71 and 72 are heated or cured at room temperature, and the bonding of the piezoelectric vibrating piece 50 to the base 20 is completed. The connection electrodes 23 and 24 and the extraction electrodes 55 and 56 are electrically connected via the conductive adhesives 71 and 72. The conductive adhesives 71 and 72 may be applied to the extraction electrodes 55 and 56 of the piezoelectric vibrating piece 50 instead of being applied to the connection electrodes 23 and 24. In this case, the conductive adhesive 71 , 72, the state at the time of bonding is the same as described above.
　続いて、真空雰囲気あるいは窒素など圧電振動片５０に対して不活性なガス雰囲気に形成されたチャンバー内で、カバー３０がシールリング６０とシーム溶接により接合される。これにより、圧電振動片５０は、圧電デバイス用パッケージ１０のキャビティー４０内に気密封止された状態で収容され、圧電デバイス１００が完成する。 Subsequently, the cover 30 is joined to the seal ring 60 by seam welding in a chamber formed in a vacuum atmosphere or a gas atmosphere inert to the piezoelectric vibrating piece 50 such as nitrogen. As a result, the piezoelectric vibrating piece 50 is accommodated in the cavity 40 of the piezoelectric device package 10 in an airtight state, and the piezoelectric device 100 is completed.
　このように、本実施形態によれば、接続電極２３、２４が切り欠き部２５、２６を備えるので、導電性接着剤７１、７２は切り欠き部２５、２６によって振動部５１の方向に拡がるのを規制することができる。これにより、導電性接着剤７１、７２が振動部５１に付着してＣＩ値を上昇させることを防止できる。また、切り欠き部２５、２６は、接続電極２３、２４から振動部５１の中心部Ｏに向かう方向Ｄ１、Ｄ２に対して、それぞれ交差する方向Ｄ３、Ｄ４に直線状に形成されるので、導電性接着剤７１、７２の流れを、方向Ｄ３、Ｄ４に向けることにより、振動部５１への導電性接着剤７１、７２の付着を確実に防止できる。また、接続電極２３、２４は、切り欠き部２５、２６を除いて略矩形状に形成されるため、引出電極５５、５６に対して十分な接続面積を確保することができる。 Thus, according to this embodiment, since the connection electrodes 23 and 24 include the notches 25 and 26, the conductive adhesives 71 and 72 are spread in the direction of the vibration part 51 by the notches 25 and 26. Can be regulated. Thereby, it can prevent that the conductive adhesives 71 and 72 adhere to the vibration part 51, and raise CI value. Further, the notches 25 and 26 are linearly formed in directions D3 and D4 intersecting with the directions D1 and D2 from the connection electrodes 23 and 24 toward the center O of the vibration part 51, respectively. By directing the flow of the conductive adhesives 71 and 72 in the directions D3 and D4, it is possible to reliably prevent the conductive adhesives 71 and 72 from adhering to the vibration part 51. Further, since the connection electrodes 23 and 24 are formed in a substantially rectangular shape excluding the notches 25 and 26, a sufficient connection area can be ensured for the extraction electrodes 55 and 56.
　また、接続電極２３、２４は、励振電極５３、５４側の端部２３ａ、２４ａが励振電極５３、５４に対して所定距離Ｗ１、Ｗ２だけ離れるため、接続電極２３、２４と振動部５１との距離を確保し、導電性接着剤７１、７２が接続電極２３、２４を超えて振動部５１の方向に流れた場合であっても、振動部５１まで到達するのを抑制することにより、ＣＩ値の上昇を防止できる。また、接続電極２３、２４は、段部２１ｂに形成されることにより、圧電振動片５０と底部２１ａとの間には所定間隔が形成され、導電性接着剤７１、７２が振動部５１に付着するのを防止できる。 Further, since the connection electrodes 23 and 24 have end portions 23a and 24a on the side of the excitation electrodes 53 and 54 that are separated from the excitation electrodes 53 and 54 by a predetermined distance W1 and W2, respectively. By securing the distance and suppressing the arrival of the conductive adhesives 71 and 72 in the direction of the vibration part 51 beyond the connection electrodes 23 and 24, the CI value is suppressed. Can be prevented. In addition, the connection electrodes 23 and 24 are formed on the step portion 21 b, whereby a predetermined interval is formed between the piezoelectric vibrating piece 50 and the bottom portion 21 a, and the conductive adhesives 71 and 72 adhere to the vibration portion 51. Can be prevented.
　また、圧電振動片５０のように、振動部５１の厚さが周辺部５２に対して厚く形成されたものでも、切り欠き部２５、２６によって導電性接着剤７１、７２が振動部５１に付着するのを防止でき、特に、圧電振動片５０の裏面が曲面状であっても導電性接着剤７１、７２が振動部５１に付着するのを防止できる。 Further, even when the vibrating portion 51 is thicker than the peripheral portion 52 like the piezoelectric vibrating piece 50, the conductive adhesives 71 and 72 are attached to the vibrating portion 51 by the cutout portions 25 and 26. In particular, even when the back surface of the piezoelectric vibrating piece 50 is curved, it is possible to prevent the conductive adhesives 71 and 72 from adhering to the vibrating portion 51.
　なお、接続電極２３の＋Ｚ側及び－Ｘ側の端部、接続電極２４の－Ｚ側及び－Ｘ側の端部が第３セラミック部２０ｃの積層部分まで形成される場合、接続電極２３、２４の画像を例えばカメラ等により取得したときに、位置や形状などの誤認識が生じることを低減できる。 When the + Z side and −X side ends of the connection electrode 23 and the −Z side and −X side ends of the connection electrode 24 are formed up to the laminated portion of the third ceramic portion 20c, the connection electrodes 23 and 24 are formed. For example, when the image is acquired by a camera or the like, it is possible to reduce occurrence of erroneous recognition of the position, shape, and the like.
　図４は、本実施形態に係る圧電デバイス１００と比較例について、温度変化に対するＣＩ値を示すグラフであり、図４（ａ）は圧電デバイス１００の測定結果、（ｂ）は比較例の測定結果を示している。図４（ａ）及び（ｂ）において、縦軸はＣＩ値、横軸は温度を示す。なお、測定された圧電デバイス１００及び比較例のサンプル数は、それぞれ４３個、５０個である。比較例は、接続電極として、切り欠き部を有しない矩形状のものが用いられ、その他の構成については圧電デバイス１００と同一である。 4A and 4B are graphs showing CI values with respect to temperature changes for the piezoelectric device 100 according to the present embodiment and the comparative example. FIG. 4A is a measurement result of the piezoelectric device 100, and FIG. 4B is a measurement result of the comparative example. Is shown. 4A and 4B, the vertical axis represents the CI value, and the horizontal axis represents the temperature. Note that the measured number of samples of the piezoelectric device 100 and the comparative example is 43 and 50, respectively. In the comparative example, a rectangular electrode having no notch is used as the connection electrode, and the other configuration is the same as that of the piezoelectric device 100.
　図４（ａ）に示すように、圧電デバイス１００は、除々に温度を低下させるとＣＩ値は緩やかに上昇していくことが確認された。また、図４（ｂ）に示すように、比較例についても、同様に、温度の低下に伴いＣＩ値は上昇するが、２０℃付近を境界にして急激に上昇するとともに、圧電デバイス１００に比べて全体的にＣＩ値が高いことが確認された。このような結果から、接続電極２３、２４に切り欠き部２５、２６が形成される場合、形成されない場合と比べて例えば低温時等にＣＩ値の上昇が抑制され、振動特性が向上することが確認された。 As shown in FIG. 4 (a), it was confirmed that the CI value of the piezoelectric device 100 gradually increased when the temperature was gradually decreased. In addition, as shown in FIG. 4B, in the comparative example as well, the CI value increases as the temperature decreases. However, the CI value rapidly increases around 20 ° C. and compared with the piezoelectric device 100. Overall, the CI value was confirmed to be high. From these results, when the notches 25 and 26 are formed in the connection electrodes 23 and 24, the increase in the CI value is suppressed, for example, at a low temperature, and the vibration characteristics are improved as compared with the case where the notches 25 and 26 are not formed. confirmed.
＜接続電極の変形例＞
　図５は、接続電極の第１～第３変形例を示し、図６は、接続電極の第４～第６変形例を示している。なお、図５及び図６は、いずれも段部２１ｂ上の－Ｚ側の接続電極を示しているが、＋Ｚ側には特に説明しない限り対称形状の接続電極が形成される。図５（ａ）～（ｃ）に示すように、第１～第３変形例に係る接続電極１２４、２２４、３２４は、いずれもＸ及びＺ方向に平行な辺を有する略矩形状の領域から４つの角部のうち振動部５１に近い１つの角部（＋Ｘかつ＋Ｚ側の角部）を切り欠いた状態で形成される。 <Modification of connection electrode>
FIG. 5 shows first to third modifications of the connection electrode, and FIG. 6 shows fourth to sixth modifications of the connection electrode. 5 and 6 both show the connection electrode on the −Z side on the stepped portion 21b, but a symmetrical connection electrode is formed on the + Z side unless otherwise specified. As shown in FIGS. 5A to 5C, the connection electrodes 124, 224, and 324 according to the first to third modifications are all formed from a substantially rectangular region having sides parallel to the X and Z directions. Of the four corners, one corner (+ X and + Z side corners) close to the vibration part 51 is cut out.
　第１変形例に係る接続電極１２４は、図５（ａ）に示すように、切り欠き部１２６の形状が、それぞれＸ方向、Ｚ方向に平行な２本の直線部を有する折れ線状となっている。この直線部の長さは、それぞれ同一であるが、異ならせてもよい。また、このような直線部は、Ｘ方向あるいはＺ方向に対して傾斜する方向に沿って形成されてもよく、３本以上を有してもよい。また、切り欠き部１２６の形状の一部に曲線部を含んでもよい。 As shown in FIG. 5A, in the connection electrode 124 according to the first modification, the shape of the notch 126 is a polygonal line having two straight portions parallel to the X direction and the Z direction, respectively. Yes. The lengths of the straight portions are the same, but may be different. Moreover, such a linear part may be formed along the direction inclined with respect to the X direction or the Z direction, and may have three or more. A part of the shape of the notch 126 may include a curved portion.
　第２変形例に係る接続電極２２４は、図５（ｂ）に示すように、切り欠き部２２６の形状が、内側に向けた円弧状となっている。この円弧の曲率は任意に設定されてよい。また、切り欠き部２２６の形状は、このような内側に向けた円弧を含んだ形状であってもよい。 In the connection electrode 224 according to the second modified example, as shown in FIG. 5B, the shape of the notch 226 is an arc shape facing inward. The curvature of the arc may be set arbitrarily. Further, the shape of the notch 226 may be a shape including such an inward arc.
　第３変形例に係る接続電極３２４は、図５（ｃ）に示すように、切り欠き部３２６の形状が、外側に向けた円弧状となっている。この円弧の曲率は任意に設定されてよい。また、切り欠き部３２６の形状は、このような外側に向けた円弧を含んだ形状であってもよい。また、内側に向けた円弧と外側に向けた円弧とを組み合わせたものでもよい。 As shown in FIG. 5C, in the connection electrode 324 according to the third modification, the shape of the notch 326 is an arc shape facing outward. The curvature of the arc may be set arbitrarily. Further, the shape of the cutout portion 326 may be a shape including such an arc toward the outside. Moreover, what combined the circular arc toward the inner side and the circular arc toward the outer side may be used.
　図６（ａ）～（ｃ）に示すように、第４～第６変形例に係る接続電極４２４、５２４、６２４は、いずれもＸ及びＺ方向に平行な辺を有する略矩形状の領域から＋Ｘ側を切り欠いた状態で形成される。 As shown in FIGS. 6A to 6C, the connection electrodes 424, 524, and 624 according to the fourth to sixth modifications are all formed from a substantially rectangular region having sides parallel to the X and Z directions. It is formed with the + X side cut out.
　第４変形例に係る接続電極４２４は、図６（ａ）に示すように、切り欠き部４２６の形状が直線状となっている。切り欠き部４２６の形状は、直線状に代えて、複数の直線部を有する折れ線状であってもよく、曲線部を含んだ形状であってもよい。 In the connection electrode 424 according to the fourth modified example, as shown in FIG. 6A, the shape of the notch 426 is linear. The shape of the cutout portion 426 may be a polygonal line shape having a plurality of straight portions instead of a straight shape, or may be a shape including a curved portion.
　第５変形例に係る接続電極５２４は、図６（ｂ）に示すように、切り欠き部５２６の形状が、内側に向けて引っ込んだ状態の曲線部となっている。この曲線部は、位置によって曲率を変化させているが、一定の曲率を有する円弧に設定されてよい。また、切り欠き部５２６の形状は、このような曲線部を含んだ形状であってもよい。 As shown in FIG. 6B, the connection electrode 524 according to the fifth modification has a curved portion in which the shape of the cutout portion 526 is retracted inward. The curved portion changes the curvature depending on the position, but may be set to an arc having a certain curvature. Further, the shape of the notch 526 may be a shape including such a curved portion.
　第６変形例に係る接続電極６２４は、図６（ｃ）に示すように、切り欠き部６２６の形状が、外側に向けて張り出した状態の曲線部となっている。この曲線部は、位置によって曲率を変化させているが、一定の曲率を有する円弧に設定されてよい。また、切り欠き部６２６の形状は、このような曲線部を含んだ形状であってもよい。 As shown in FIG. 6C, the connection electrode 624 according to the sixth modification is a curved portion in which the shape of the cutout portion 626 projects outward. The curved portion changes the curvature depending on the position, but may be set to an arc having a certain curvature. Further, the shape of the notch 626 may include such a curved portion.
　以上の第１～６変形例に係る接続電極１２４～６２４は、上記した接続電極２４と同様の効果を有する。また、第４～６変形例では、振動部５１に近い＋Ｘ側が切り欠かれるので、接続電極４２４等が振動部５１から離れた状態となり、導電性接着剤７２が振動部５１まで達するのを防止することができる。 The connection electrodes 124 to 624 according to the above first to sixth modifications have the same effects as the connection electrode 24 described above. In the fourth to sixth modifications, since the + X side close to the vibration part 51 is cut away, the connection electrode 424 and the like are separated from the vibration part 51, and the conductive adhesive 72 is prevented from reaching the vibration part 51. can do.
　＜圧電デバイス用パッケージ及び圧電デバイスの変形例＞
　図７は、第１変形例に係る圧電デバイス用パッケージ２１０及び圧電デバイス２００を示す断面図である。以下の説明において、上記した圧電デバイス用パッケージ１０及び圧電デバイス１００と同一または同等の構成部分については同一符号を付けて説明を省略または簡略化する。 <Piezoelectric Device Package and Modified Examples of Piezoelectric Device>
FIG. 7 is a cross-sectional view showing a piezoelectric device package 210 and a piezoelectric device 200 according to a first modification. In the following description, the same or equivalent components as those of the piezoelectric device package 10 and the piezoelectric device 100 described above are denoted by the same reference numerals and description thereof is omitted or simplified.
　図７に示すように、圧電デバイス用パッケージ２１０は、圧電振動片５０をパッケージ本体２１０ａに保持しかつ収容する。パッケージ本体２１０ａは、ベース２２０とカバー３０とを有している。ベース２２０には、電子デバイス８０が搭載される。ベース２２０の底部２１ａの表面（＋Ｙ側の面）には、例えば６つの接続用電極２２７が形成される。接続用電極２２７は、それぞれ、電子デバイス８０の６つの端子の各位置に対応する領域に形成される。 As shown in FIG. 7, the piezoelectric device package 210 holds and accommodates the piezoelectric vibrating piece 50 in the package body 210a. The package body 210 a has a base 220 and a cover 30. An electronic device 80 is mounted on the base 220. For example, six connection electrodes 227 are formed on the surface (the surface on the + Y side) of the bottom portion 21a of the base 220. The connection electrodes 227 are formed in regions corresponding to the positions of the six terminals of the electronic device 80, respectively.
　接続用電極２２７は、不図示の引回し電極に接続される。引回し電極は、接続電極２３、２４及び外部電極２６ａ～２６ｄに接続される。このような引回し電極は、例えば、第１セラミック部２０ａや第２セラミック部２０ｂを貫通する電極や、第１あるいは第２セラミック部２０ａ、２０ｂなどの角部又は側面部においてＹ方向に沿って形成されるキャスタレーション電極などが用いられる。例えば、６つの接続用電極２２７のうち２つは、引回し電極及び接続電極２３、２４を介して励振電極５３、５４と電気的に接続される。また、残りの４つの接続用電極２２７は、引回し電極を介して外部電極２６ａ～２６ｄと電気的に接続される。 The connection electrode 227 is connected to a routing electrode (not shown). The routing electrode is connected to the connection electrodes 23 and 24 and the external electrodes 26a to 26d. Such a routing electrode is, for example, an electrode penetrating the first ceramic part 20a or the second ceramic part 20b, or a corner or a side part of the first or second ceramic part 20a, 20b along the Y direction. A castellation electrode or the like to be formed is used. For example, two of the six connection electrodes 227 are electrically connected to the excitation electrodes 53 and 54 via the routing electrodes and connection electrodes 23 and 24. The remaining four connection electrodes 227 are electrically connected to the external electrodes 26a to 26d through the routing electrodes.
　圧電デバイス２００は、図７に示すように、圧電デバイス用パッケージ２１０と、圧電振動片５０と、電子デバイス８０とを有する。なお、圧電デバイス２００は、発振器である。電子デバイス８０は、ベース２２０の底部２１ａの＋Ｙ側の面に、例えば、バンプ９０によって保持される。バンプ９０としては、例えば、金バンプ、はんだバンプ、はんだボールなどが用いられる。 The piezoelectric device 200 includes a piezoelectric device package 210, a piezoelectric vibrating piece 50, and an electronic device 80 as shown in FIG. The piezoelectric device 200 is an oscillator. The electronic device 80 is held on the surface on the + Y side of the bottom 21a of the base 220 by, for example, bumps 90. As the bump 90, for example, a gold bump, a solder bump, a solder ball, or the like is used.
　電子デバイス８０の６つの端子８１のうち２つの端子８１は、励振電極５３、５４と電気的に接続される。残りの４つの端子８１は、それぞれ、発振回路からの出力用端子、駆動用電圧用端子、グラウンド用端子、スタンバイ機能用端子である。これらの６つの端子は、それぞれバンプ９０を介して接続用電極２２７と電気的に接続される。なお、電子デバイス８０としては、例えばＩＣやＬＳＩなどの集積回路であってもよい。また、電子デバイス８０の端子数は６つ以外であってもよい。なお、この場合、接続用電極２２７は、端子数に対応して形成される。後述する接続用電極３２７についても同様である。 Of the six terminals 81 of the electronic device 80, two terminals 81 are electrically connected to the excitation electrodes 53 and 54. The remaining four terminals 81 are an output terminal from the oscillation circuit, a drive voltage terminal, a ground terminal, and a standby function terminal, respectively. These six terminals are electrically connected to the connection electrodes 227 through the bumps 90, respectively. The electronic device 80 may be an integrated circuit such as an IC or an LSI. Further, the number of terminals of the electronic device 80 may be other than six. In this case, the connection electrode 227 is formed corresponding to the number of terminals. The same applies to connection electrodes 327 described later.
　圧電デバイス２００（圧電デバイス用パッケージ２１０）の製造方法は、上記した圧電デバイス１００（圧電デバイス用パッケージ１０）の製造方法とほぼ同様である。ただし、電子デバイス８０は、圧電振動片５０の搭載前に、例えばチップマウンタにより接続用電極２２７と端子８１との位置合わせを行いつつ、底部２１ａに搭載される。なお、底部２１ａの表面と電子デバイス８０との隙間は、樹脂等が充填されてもよい。 The manufacturing method of the piezoelectric device 200 (piezoelectric device package 210) is almost the same as the manufacturing method of the piezoelectric device 100 (piezoelectric device package 10) described above. However, before mounting the piezoelectric vibrating piece 50, the electronic device 80 is mounted on the bottom 21a while aligning the connection electrode 227 and the terminal 81 with a chip mounter, for example. The gap between the surface of the bottom 21a and the electronic device 80 may be filled with resin or the like.
　図８は、第２変形例に係る圧電デバイス用パッケージ３１０及び圧電デバイス３００を示す断面図である。図８に示すように、圧電デバイス用パッケージ３１０は、圧電振動片５０をパッケージ本体３１０ａに保持しかつ収容する。パッケージ本体３１０ａは、ベース３２０とカバー３０とを有している。ベース３２０は、第１セラミック部２０ａの－Ｙ側に、第４セラミック部３２０ａが積層された構成を有する。第４セラミック部３２０ａは、第１～第３セラミック部２０ａ等と同一の厚さを有し、かつ同種のセラミック材料から形成される。なお、第４セラミック部３２０ａは、第１～第３セラミック部２０ａ等とは異なる厚さで形成されてもよく、例えば電子デバイス８０の高さ（Ｙ方向の距離）に合わせた厚さに形成されてもよい。また、第１～第３セラミック部２０ａ等と異なるセラミック材料から形成されてもよい。 FIG. 8 is a cross-sectional view showing a piezoelectric device package 310 and a piezoelectric device 300 according to a second modification. As shown in FIG. 8, the piezoelectric device package 310 holds and accommodates the piezoelectric vibrating piece 50 in a package body 310a. The package main body 310 a has a base 320 and a cover 30. The base 320 has a configuration in which a fourth ceramic part 320a is laminated on the −Y side of the first ceramic part 20a. The fourth ceramic portion 320a has the same thickness as the first to third ceramic portions 20a and the like, and is formed of the same kind of ceramic material. The fourth ceramic portion 320a may be formed with a thickness different from that of the first to third ceramic portions 20a and the like. For example, the fourth ceramic portion 320a is formed with a thickness according to the height (distance in the Y direction) of the electronic device 80. May be. Further, it may be formed of a ceramic material different from that of the first to third ceramic portions 20a.
　第４セラミック部３２０ａは、中央部分の領域がＹ方向に貫通した枠状の部材であり、ベース３２０の裏面（－Ｙ側の面）には、凹部３２１が形成される。凹部３２１は、電子デバイス８０が収容可能に形成される。凹部３２１の－Ｙ側の面には、例えば、６つの接続用電極３２７が形成される。接続用電極３２７は、それぞれ電子デバイス８０の６つの端子の各位置に対応する領域に形成される。また、第４セラミック部３２０ａの－Ｙ側の凹部３２１を囲んだ面には、それぞれ４つ角部に、略矩形状の外部電極３２６ａ～３２６ｄが形成される。 The fourth ceramic portion 320a is a frame-like member having a central portion penetrating in the Y direction, and a recess 321 is formed on the back surface (the surface on the -Y side) of the base 320. The recess 321 is formed so that the electronic device 80 can be accommodated. For example, six connection electrodes 327 are formed on the surface at the −Y side of the recess 321. The connection electrodes 327 are formed in regions corresponding to the positions of the six terminals of the electronic device 80, respectively. In addition, substantially rectangular external electrodes 326a to 326d are formed at four corners on the surface surrounding the recess 321 on the −Y side of the fourth ceramic portion 320a.
　接続用電極３２７は、不図示の引回し電極に接続される。引回し電極は、接続電極２３、２４及び外部電極３２６ａ～３２６ｄに接続される。このような引回し電極は、例えば、第１セラミック部２０ａや第２セラミック部２２０ｂを貫通する電極や、第１あるいは第２、第４セラミック部２０ａ、２０ｂ、３２０ａなどの角部又は側面部においてＹ方向に沿って形成されるキャスタレーション電極などが用いられる。例えば、６つの接続用電極３２７のうち２つは、引回し電極及び接続電極２３、２４を介して励振電極５３、５４と電気的に接続される。また、残りの４つの接続用電極３２７は、引回し電極を介して外部電極３２６ａ～３２６ｄと電気的に接続される。 The connection electrode 327 is connected to a routing electrode (not shown). The routing electrode is connected to the connection electrodes 23 and 24 and the external electrodes 326a to 326d. Such a routing electrode is, for example, in an electrode penetrating the first ceramic part 20a or the second ceramic part 220b, or in a corner part or a side part such as the first or second ceramic part 20a, 20b, 320a. A castellation electrode formed along the Y direction is used. For example, two of the six connection electrodes 327 are electrically connected to the excitation electrodes 53 and 54 via the routing electrodes and connection electrodes 23 and 24. The remaining four connection electrodes 327 are electrically connected to the external electrodes 326a to 326d through routing electrodes.
　圧電デバイス３００は、図８に示すように、圧電デバイス用パッケージ３１０と、圧電振動片５０と、電子デバイス８０とを有する。なお、圧電デバイス３００は、発振器である。電子デバイス８０は、ベース３２０の－Ｙ側に形成された凹部３２１の－Ｙ側の面に配置される。電子デバイス８０は、例えばバンプ９０によって、圧電デバイス用パッケージ３１０に保持される。電子デバイス８０の６つの端子８１は、バンプ９０を介して、それぞれ接続電極３２７と電気的に接続される。 As shown in FIG. 8, the piezoelectric device 300 includes a piezoelectric device package 310, a piezoelectric vibrating piece 50, and an electronic device 80. The piezoelectric device 300 is an oscillator. The electronic device 80 is disposed on the −Y side surface of the recess 321 formed on the −Y side of the base 320. The electronic device 80 is held in the piezoelectric device package 310 by, for example, bumps 90. The six terminals 81 of the electronic device 80 are electrically connected to the connection electrodes 327 through the bumps 90, respectively.
　圧電デバイス３００（圧電デバイス用パッケージ３１０）の製造方法は、上記した、圧電デバイス１００の製造方法とほぼ同様である。ただし、第４セラミック部３２０ａは、次のように形成される。先ず、多面取り用の第４シートが用意される。この第４シートは、所定の厚さを有するグリーンシートである。次いで、第４シートのうち、凹部３２１を形成する部分の領域がプレス抜きされる。次いで、第１～第３シートが積層される工程において、第１シートの裏面（第２シートと反対側の面）に第４シートが積層された後、積層シートは切断かつ焼成され、所定の電極が設けられる。このようにして、第４セラミック部３２０ａが形成される。また、凹部３２１の－Ｙ側の面と電子デバイス８０との隙間は、樹脂等で充填されてもよい。 The method for manufacturing the piezoelectric device 300 (piezoelectric device package 310) is substantially the same as the method for manufacturing the piezoelectric device 100 described above. However, the fourth ceramic portion 320a is formed as follows. First, a fourth sheet for multi-face preparation is prepared. This fourth sheet is a green sheet having a predetermined thickness. Subsequently, the area | region of the part which forms the recessed part 321 among 4th sheets is press-punched. Next, in the step of laminating the first to third sheets, after the fourth sheet is laminated on the back surface (the surface opposite to the second sheet) of the first sheet, the laminated sheet is cut and fired, An electrode is provided. In this way, the fourth ceramic portion 320a is formed. Further, the gap between the −Y side surface of the recess 321 and the electronic device 80 may be filled with a resin or the like.
　以上、本発明の圧電デバイス用パッケージ及び圧電デバイスについて説明したが、本発明は、上記した説明に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更が可能である。例えば、上記した実施形態及び変形例の構成の一部を組み合わせてもよい。また、圧電デバイス１００～３００は、圧電振動子あるいは発振器に限定されず、フィルタやＳＡＷデバイスなどであってもよい。 Although the piezoelectric device package and the piezoelectric device of the present invention have been described above, the present invention is not limited to the above description, and various modifications can be made without departing from the gist of the present invention. For example, you may combine a part of structure of above-described embodiment and modification. The piezoelectric devices 100 to 300 are not limited to piezoelectric vibrators or oscillators, and may be filters, SAW devices, or the like.
　また、圧電デバイス１００～３００において、キャビティー４０にサーミスタ等のデバイスが収容されてもよい。サーミスタが搭載されることにより、この圧電デバイスは、例えば温度補償機能を備える。また、サーミスタはキャビティー４０に収容されるため、温度補償機能の精度を向上できる。 In the piezoelectric devices 100 to 300, a device such as a thermistor may be accommodated in the cavity 40. By mounting the thermistor, this piezoelectric device has a temperature compensation function, for example. Moreover, since the thermistor is accommodated in the cavity 40, the accuracy of the temperature compensation function can be improved.
　Ｄ１、Ｄ２、Ｄ３、Ｄ４…方向
　Ｏ…中心部
　Ｗ１、Ｗ２…所定距離
　１０、２１０、３１０…圧電デバイス用パッケージ
　１０ａ、２１０ａ、３１０ａ…パッケージ本体
　２０、２２０、３２０…ベース
　２１ｂ…段部
　２３、２４、１２４、２２４、３２４、４２４、５２４、６２４…接続電極
　２３ａ、２４ａ…端部
　２５、２６、１２６、２２６、３２６、４２６、５２６、６２６…切り欠き部
　５０…圧電振動片
　５１…振動部
　５２…周辺部
　５３、５４…励振電極
　７１、７２…導電性接着剤
　１００、２００、３００…圧電デバイス D1, D2, D3, D4 ... direction O ... center part W1, W2 ... predetermined distance 10, 210, 310 ... package for piezoelectric device 10a, 210a, 310a ... package body 20, 220, 320 ... base 21b ... step part 23, 24, 124, 224, 324, 424, 524, 624 ... connection electrode 23a, 24a ... end 25, 26, 126, 226, 326, 426, 526, 626 ... notch 50 ... piezoelectric vibrating piece 51 ... vibrating part 52 ... Peripheral parts 53, 54 ... Excitation electrodes 71, 72 ... Conductive adhesives 100, 200, 300 ... Piezoelectric devices

Claims (8)

  1. 　圧電振動片を保持するパッケージ本体を有し、前記圧電振動片に形成された励振電極と電気的に接続される接続電極を前記パッケージ本体に備える圧電デバイス用パッケージであって、前記接続電極は、前記パッケージ本体に保持される前記圧電振動片の振動部側を切り欠いた状態の切り欠き部を備える圧電デバイス用パッケージ。 A package for a piezoelectric device having a package body for holding a piezoelectric vibrating piece, and a connection electrode electrically connected to an excitation electrode formed on the piezoelectric vibrating piece, the connection electrode comprising: A package for a piezoelectric device, comprising a cutout portion in a state where a vibration portion side of the piezoelectric vibrating piece held by the package body is cut out.
  2. 　前記切り欠き部は、前記接続電極から前記振動部の中心部に向かう方向に対して交差する方向に直線状に切り欠いて形成される請求項１記載の圧電デバイス用パッケージ。 The package for a piezoelectric device according to claim 1, wherein the cutout portion is formed by cutting out in a straight line in a direction intersecting with a direction from the connection electrode toward a center portion of the vibration portion.
  3. 　前記切り欠き部は、略矩形状の前記接続電極の４つの角部のうち前記振動部に近い１つの角部を直線状に切り欠いて形成される請求項２記載の圧電デバイス用パッケージ。 3. The package for a piezoelectric device according to claim 2, wherein the notch is formed by linearly notching one corner close to the vibration part among the four corners of the connection electrode having a substantially rectangular shape.
  4. 　前記接続電極は、前記励振電極側の端部が前記励振電極に対して所定距離だけ離れるように形成される請求項１～請求項３のいずれか１項に記載の圧電デバイス用パッケージ。 The piezoelectric device package according to any one of claims 1 to 3, wherein the connection electrode is formed such that an end portion on the excitation electrode side is separated from the excitation electrode by a predetermined distance.
  5. 　前記パッケージ本体は、ベースと、前記ベースに形成された段部と、を有し、前記接続電極は、前記段部に形成される請求項１～請求項４のいずれか１項に記載の圧電デバイス用パッケージ。 The piezoelectric body according to any one of claims 1 to 4, wherein the package body includes a base and a step portion formed on the base, and the connection electrode is formed on the step portion. Device package.
  6. 　請求項１～請求項５のいずれか１項に記載の圧電デバイス用パッケージと、導電性接着剤によって前記パッケージ本体に保持されかつ前記接続電極と電気的に接続される励振電極を備える圧電振動片と、を含む圧電デバイス。 6. A piezoelectric resonator element comprising: the piezoelectric device package according to claim 1; and an excitation electrode that is held on the package body by a conductive adhesive and is electrically connected to the connection electrode. And a piezoelectric device.
  7. 　前記圧電振動片は、前記励振電極が形成される振動部の厚さが周辺部に対して厚く形成される請求項６記載の圧電デバイス。 The piezoelectric device according to claim 6, wherein the piezoelectric vibrating piece is formed such that a vibrating portion on which the excitation electrode is formed is thicker than a peripheral portion.
  8. 　前記圧電振動片は、前記パッケージ本体に接着される側の表面が曲面状である請求項７記載の圧電デバイス。 The piezoelectric device according to claim 7, wherein the piezoelectric vibrating piece has a curved surface on the side bonded to the package body.
PCT/JP2015/052094 2014-01-30 2015-01-27 Piezoelectric device package and piezoelectric device WO2015115388A1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002198767A (en) * 2000-12-27 2002-07-12 Kyocera Corp Container for housing piezoelectric vibrator
JP2003318692A (en) * 2002-04-25 2003-11-07 Kyocera Corp Piezoelectric device
JP2009117902A (en) * 2007-11-01 2009-05-28 Nippon Dempa Kogyo Co Ltd Crystal device for surface mounting

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002198767A (en) * 2000-12-27 2002-07-12 Kyocera Corp Container for housing piezoelectric vibrator
JP2003318692A (en) * 2002-04-25 2003-11-07 Kyocera Corp Piezoelectric device
JP2009117902A (en) * 2007-11-01 2009-05-28 Nippon Dempa Kogyo Co Ltd Crystal device for surface mounting

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