WO2015111599A1 - Procédé de production de corps de connexion et procédé de connexion de composant électronique - Google Patents

Procédé de production de corps de connexion et procédé de connexion de composant électronique Download PDF

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Publication number
WO2015111599A1
WO2015111599A1 PCT/JP2015/051464 JP2015051464W WO2015111599A1 WO 2015111599 A1 WO2015111599 A1 WO 2015111599A1 JP 2015051464 W JP2015051464 W JP 2015051464W WO 2015111599 A1 WO2015111599 A1 WO 2015111599A1
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pressing
heating
liquid crystal
ultraviolet irradiation
time
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PCT/JP2015/051464
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English (en)
Japanese (ja)
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太一郎 梶谷
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デクセリアルズ株式会社
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
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    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83862—Heat curing
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    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83874—Ultraviolet [UV] curing
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83885—Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/83855 - H01L2224/8388, e.g. for hybrid thermoplastic-thermosetting adhesives
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0278—Flat pressure, e.g. for connecting terminals with anisotropic conductive adhesive

Definitions

  • the present invention relates to a method for producing a connection body in which an electronic component is connected to a transparent substrate via an adhesive for circuit connection containing a photopolymerization initiator, and an adhesive for circuit connection containing a photopolymerization initiator.
  • the present invention relates to a connection method for connecting an electronic component on a transparent substrate, and more particularly to a method for manufacturing a connection body using both heating and pressurization and light irradiation, and a connection method for an electronic component.
  • liquid crystal display devices are often used as various display means such as televisions, PC monitors, mobile phones, portable game machines, tablet PCs, and in-vehicle monitors.
  • COG chip on glass
  • a liquid crystal driving IC is directly mounted on a substrate of a liquid crystal display panel or a liquid crystal driving circuit from the viewpoints of fine pitch, light weight, and thinning.
  • FOG film on ⁇ ⁇ glass
  • the flexible substrate on which is formed is directly mounted on the substrate of the liquid crystal display panel.
  • a liquid crystal display device 100 employing a COG mounting system has a liquid crystal display panel 104 that performs a main function for liquid crystal display.
  • the liquid crystal display panel 104 is a glass substrate or the like. And two transparent substrates 102 and 103 facing each other.
  • the transparent substrates 102 and 103 are bonded to each other by a frame-shaped seal 105, and the liquid crystal 106 is sealed in a space surrounded by the transparent substrates 102 and 103 and the seal 105.
  • a panel display unit 107 is provided.
  • the transparent substrates 102 and 103 have a pair of striped transparent electrodes 108 and 109 made of ITO (Indium Tin Oxide) or the like on both inner surfaces facing each other so as to intersect each other.
  • the transparent substrates 102 and 103 are configured such that a pixel as a minimum unit of liquid crystal display is constituted by the intersection of the transparent electrodes 108 and 109.
  • one transparent substrate 103 is formed to have a larger planar dimension than the other transparent substrate 102, and the transparent electrode 109 is formed on the edge 103a of the transparent substrate 103 formed to be large. Terminal portion 109a is formed.
  • alignment films 111 and 112 subjected to a predetermined rubbing process are formed on both transparent electrodes 108 and 109, and the initial alignment of liquid crystal molecules is regulated by the alignment films 111 and 112. ing.
  • a pair of polarizing plates 118 and 119 are disposed outside the transparent electrodes 108 and 109, and the vibration direction of transmitted light from the light source 120 such as a backlight is regulated by the polarizing plates 118 and 119. It has come to be.
  • the liquid crystal driving IC 115 is thermocompression-bonded on the terminal portion 109a via an anisotropic conductive film 114.
  • the anisotropic conductive film 114 is a film formed by mixing conductive particles in a thermosetting binder resin, and heat conduction is performed between the two conductors so that the electrical conduction between the conductors is achieved by the conductive particles. And the mechanical connection between the conductors is maintained by the binder resin.
  • the liquid crystal driving IC 115 can perform predetermined liquid crystal display by selectively changing the alignment of the liquid crystal by selectively applying a liquid crystal driving voltage to the pixels.
  • the adhesive constituting the anisotropic conductive film 114 the most reliable thermosetting adhesive is usually used.
  • the anisotropic conductive film 114 is attached to the terminal portion 109a of the transparent electrode 109 by a temporary crimping means (not shown). Temporarily crimp. Subsequently, after the liquid crystal driving IC 115 is placed on the anisotropic conductive film 114, the liquid crystal driving IC 115 is connected to the terminal together with the anisotropic conductive film 114 by the thermocompression bonding means 121 such as a thermocompression bonding head as shown in FIG. The thermocompression bonding means 121 is caused to generate heat while being pressed toward the portion 109a.
  • the anisotropic conductive film 114 undergoes a thermosetting reaction, whereby the liquid crystal driving IC 115 is bonded onto the terminal portion 109a via the anisotropic conductive film 114.
  • the heat pressing temperature is high, and the thermal shock to the electronic components such as the liquid crystal driving IC 115 and the transparent substrate 103 is increased.
  • the anisotropic conductive film is connected, when the temperature decreases to room temperature, the binder contracts due to the temperature difference, and the terminal portion 109a of the transparent substrate 103 may be warped. For this reason, there is a risk of causing problems such as uneven display and poor connection of the liquid crystal driving IC 115.
  • connection method using an ultraviolet curable adhesive instead of the anisotropic conductive film 114 using such a thermosetting adhesive has been proposed.
  • the adhesive softens and flows due to heat, and the temperature is sufficient to capture the conductive particles between the terminal portion 109a of the transparent electrode 109 and the electrode of the liquid crystal driving IC 115. Only heat, cure the adhesive by UV irradiation.
  • the present invention solves the above-described problems, and uses a photo-curing adhesive to connect electronic components at a low temperature and to improve the connection failure of the electronic components, and the electronic An object is to provide a method for connecting parts.
  • a manufacturing method of a connection body includes arranging an electronic component on a transparent substrate via an adhesive for circuit connection containing a photopolymerization initiator, Heating and light irradiation are performed while pressing against the transparent substrate, and light irradiation is terminated while continuing heating and pressing.
  • the electronic component connection method includes an electronic component disposed on a transparent substrate via a circuit connection adhesive containing a photopolymerization initiator, and presses the electronic component against the transparent substrate. Then, heating and light irradiation are performed, and the light irradiation is terminated while continuing the heating and pressing.
  • the adhesive containing the conductive particles is heated to a temperature at which the adhesive is contained while pressing the electronic component, and light irradiation is performed in this state, and the light irradiation is completed.
  • the binder can be sufficiently softened, and the conductive particles can be sufficiently pushed in to improve the connection reliability of the electronic component and ensure the adhesive strength. it can.
  • FIG. 1 is a cross-sectional view showing a mounting process to which the present invention is applied.
  • FIG. 2 is a cross-sectional view showing an anisotropic conductive film.
  • FIG. 3 is a diagram for explaining a method of measuring conduction resistance according to the example and the comparative example.
  • FIG. 4 is a cross-sectional view showing a conventional liquid crystal display panel.
  • FIG. 5 is a cross-sectional view showing a COG mounting process of a conventional liquid crystal display panel.
  • connection body a connection body and a method for connecting an electronic component to which the present invention is applied will be described in detail with reference to the drawings.
  • the present invention is not limited to the following embodiments, and various modifications can be made without departing from the scope of the present invention.
  • the drawings are schematic, and the ratio of each dimension may be different from the actual one. Specific dimensions should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.
  • the liquid crystal display panel 10 includes two transparent substrates 11 and 12 made of a glass substrate and the like, and the transparent substrates 11 and 12 are bonded to each other by a frame-shaped seal 13. .
  • the liquid crystal 14 is sealed in a space surrounded by the transparent substrates 11 and 12 to form a panel display unit 15.
  • the transparent substrates 11 and 12 have a pair of striped transparent electrodes 16 and 17 made of ITO (Indium Tin Oxide) or the like on both inner surfaces facing each other so as to intersect each other.
  • the transparent electrodes 16 and 17 are configured such that a pixel as a minimum unit of liquid crystal display is configured by the intersection of the transparent electrodes 16 and 17.
  • one transparent substrate 12 is formed to have a larger planar dimension than the other transparent substrate 11, and an edge 12a of the formed transparent substrate 12 has an electronic component.
  • a COG mounting portion 20 on which the liquid crystal driving IC 18 is mounted is provided, and an FOG mounting portion 22 on which a flexible substrate 21 on which a liquid crystal driving circuit is formed as an electronic component is mounted is provided near the outside of the COG mounting portion 20. It has been.
  • liquid crystal driving IC and the liquid crystal driving circuit can perform predetermined liquid crystal display by selectively changing the alignment of the liquid crystal by selectively applying the liquid crystal driving voltage to the pixels. ing.
  • the terminal portions 17a of the transparent electrodes 17 are formed on the mounting portions 20 and 22, respectively.
  • the liquid crystal driving IC 18 and the flexible substrate 21 are connected using the anisotropic conductive film 1 as an adhesive for circuit connection containing a photopolymerization initiator.
  • the anisotropic conductive film 1 contains the conductive particles 4, and includes the liquid crystal driving IC 18 and the electrode of the flexible substrate 21 and the terminal portion 17 a of the transparent electrode 17 formed on the edge portion 12 a of the transparent substrate 12. Electrical connection is made through the conductive particles 4.
  • the anisotropic conductive film 1 is an ultraviolet curable adhesive, and is fluidized by being thermocompression bonded by a heating and pressing head 30 described later, whereby the conductive particles 4 are converted into terminal portions 17a, a liquid crystal driving IC 18 and a flexible substrate. By being crushed between the respective electrodes 21 and being irradiated with ultraviolet rays by the ultraviolet irradiator 31, the conductive particles 4 are cured in a crushed state. Thereby, the anisotropic conductive film 1 electrically and mechanically connects the transparent substrate 12 to the liquid crystal driving IC 18 and the flexible substrate 21.
  • an alignment film 24 subjected to a predetermined rubbing process is formed on both the transparent electrodes 16 and 17, and the initial alignment of liquid crystal molecules is regulated by the alignment film 24.
  • a pair of polarizing plates 25 and 26 are disposed outside the transparent substrates 11 and 12, and these polarizing plates 25 and 26 allow transmitted light from a light source (not shown) such as a backlight to be transmitted. The vibration direction is regulated.
  • an anisotropic conductive film (ACF) 1 is usually formed with a binder resin layer (adhesive layer) 3 containing conductive particles on a release film 2 as a base material. It has been done.
  • the anisotropic conductive film 1 has a binder resin layer 3 interposed between a transparent electrode 17 formed on a transparent substrate 12 of the liquid crystal display panel 10 and a liquid crystal driving IC 18 or a flexible substrate 21. As a result, the liquid crystal display panel 10 and the liquid crystal driving IC 18 or the flexible substrate 21 are connected and made conductive.
  • a substrate such as a polyethylene terephthalate film generally used in anisotropic conductive films can be used.
  • the binder resin layer 3 is formed by dispersing conductive particles 4 in a binder.
  • the binder contains a film-forming resin, a curable resin, a curing agent, a silane coupling agent, and the like, and is the same as the binder used for a normal anisotropic conductive film.
  • the film forming resin is preferably a resin having an average molecular weight of about 10,000 to 80,000.
  • the film forming resin include various resins such as a phenoxy resin, an epoxy resin, a modified epoxy resin, and a urethane resin.
  • phenoxy resin is particularly preferable from the viewpoint of film formation state, connection reliability, and the like.
  • the curable resin is not particularly limited, and examples thereof include an epoxy resin and an acrylic resin.
  • an epoxy resin there is no restriction
  • naphthalene type epoxy resin, biphenyl type epoxy resin, phenol novolac type epoxy resin, bisphenol type epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, phenol aralkyl type epoxy resin, naphthol type epoxy resin, A dicyclopentadiene type epoxy resin, a triphenylmethane type epoxy resin, etc. are mentioned. These may be used alone or in combination of two or more.
  • an acrylic resin there is no restriction
  • the curing agent is not particularly limited as long as it is a photo-curing type, and can be appropriately selected according to the purpose.
  • the curable resin is an epoxy resin, a cationic curing agent is preferable, and the curable resin is an acrylic resin. In this case, a radical curing agent is preferable.
  • curing agent there is no restriction
  • curing agent For example, a sulfonium salt, onium salt, etc. can be mentioned, Among these, an aromatic sulfonium salt is preferable.
  • curing agent According to the objective, it can select suitably, For example, an organic peroxide can be mentioned.
  • silane coupling agents include epoxy, amino, mercapto sulfide, ureido and the like. By adding the silane coupling agent, the adhesion at the interface between the organic material and the inorganic material is improved.
  • Examples of the conductive particles 4 include any known conductive particles used in anisotropic conductive films.
  • Examples of the conductive particles 4 include particles of various metals and metal alloys such as nickel, iron, copper, aluminum, tin, lead, chromium, cobalt, silver, gold, metal oxide, carbon, graphite, glass, ceramic, Examples thereof include those in which the surface of particles such as plastic is coated with metal, or those in which the surface of these particles is further coated with an insulating thin film.
  • examples of the resin particle include an epoxy resin, a phenol resin, an acrylic resin, an acrylonitrile / styrene (AS) resin, a benzoguanamine resin, a divinylbenzene resin, a styrene resin, and the like. Can be mentioned.
  • the anisotropic conductive film 1 is temporarily pressure-bonded onto the transparent electrode 17.
  • the method for temporarily pressing the anisotropic conductive film 1 is to dispose the anisotropic conductive film 1 on the transparent electrode 17 of the transparent substrate 12 of the liquid crystal display panel 10 so that the binder resin layer 3 is on the transparent electrode 17 side. To do.
  • the binder resin layer 3 is heated and pressurized with the heating press head 30 from the peeling film 2 side, for example, the heating press head 30 is separated from the peeling film 2, and a peeling film 2 is peeled off from the binder resin layer 3 on the transparent electrode 17, so that only the binder resin layer 3 is temporarily attached on the transparent electrode 17.
  • Temporary pressure bonding by the heating and pressing head 30 heats the upper surface of the release film 2 with a slight pressure (for example, about 0.1 MPa to 2 MPa) while pressing it against the transparent electrode 17 side (for example, about 70 to 100 ° C.).
  • the liquid crystal driving IC 18 is arranged so that the transparent electrode 17 of the transparent substrate 12 and the electrode terminal of the liquid crystal driving IC 18 face each other with the binder resin layer 3 interposed therebetween.
  • the upper surface of the liquid crystal driving IC 18 is heat-pressed at a predetermined temperature and a predetermined pressure by the heating and pressing head 30 which has been heated to a predetermined heating temperature.
  • the heat pressing temperature by the heating and pressing head 30 is a temperature of ⁇ 10 to 20 ° C. (for example, around 100 ° C.) with respect to a predetermined temperature indicating the viscosity (minimum melt viscosity) when the binder resin layer 3 is melted before the start of curing. ).
  • the anisotropic conductive film 1 is irradiated with ultraviolet rays by the ultraviolet irradiator 31 provided on the back side of the transparent substrate 12 while continuing the heating and pressing.
  • the ultraviolet light emitted from the ultraviolet irradiator 31 passes through a transparent support base such as glass supporting the transparent substrate 12 and the transparent substrate 12 supported by the support base and is irradiated to the binder resin layer 3.
  • a transparent support base such as glass supporting the transparent substrate 12 and the transparent substrate 12 supported by the support base and is irradiated to the binder resin layer 3.
  • an LED lamp, a mercury lamp, a metal halide lamp, or the like can be used.
  • the irradiation time, irradiation stage and illuminance, and total irradiation amount by the ultraviolet irradiator 31 suppress the progress of the curing reaction of the binder resin from the composition of the binder resin and the hot press temperature, pressure and time by the heating and pressing head 30.
  • conditions for improving connection reliability and adhesive strength by pressing with the heating and pressing head 30 are appropriately set.
  • the ultraviolet irradiation by the ultraviolet irradiator 31 is performed for a predetermined time
  • the ultraviolet irradiation is finished while continuing the heating and pressing by the heating and pressing head 30. Even after the end of ultraviolet irradiation, heating and pressing are performed for a predetermined time.
  • the liquid crystal driving IC 18 is finally pressure-bonded onto the terminal portion 17 a via the anisotropic conductive film 1.
  • the ultraviolet irradiation process is performed for a predetermined time together with the heating and pressing process for the liquid crystal driving IC 18, and the heating and pressing is continued for the predetermined time even after the ultraviolet irradiation is finished.
  • the binder resin flows out between the terminal portion 17a of the transparent electrode 17 and the electrode terminal of the liquid crystal driving IC 18 by heating and pressing, and the conductive particles 4 are removed. It can be crushed and cured in this state. Therefore, according to this manufacturing process, the conduction reliability between the liquid crystal driving IC 18 and the transparent electrode 17 can be improved.
  • the heating and pressing process is continued even after the ultraviolet irradiation is completed, so that the progress of the curing reaction of the binder resin is suppressed and the liquid crystal driving IC 18 and the transparent substrate 12 are sufficiently provided. It can be penetrated, and the adhesion strength of the liquid crystal driving IC 18 to the transparent substrate 12 can be improved.
  • the binder resin curing reaction proceeds, and the binder resin is excluded from between the terminal portion 17a of the transparent electrode 17 and the electrode terminal of the liquid crystal driving IC 18 by the heat pressing.
  • the conductive particles 4 cannot be sandwiched sufficiently. Therefore, the conduction resistance with the liquid crystal driving IC 18 is increased.
  • the binder resin cures before the liquid crystal driving IC 18 adheres to the transparent substrate 12 via the binder resin, so that the adhesive strength is insufficient. .
  • the heating and pressing head 30 is heated to a temperature necessary for melting the binder resin layer 3 and starts a curing reaction by irradiation with ultraviolet rays after melting, thereby causing conduction resistance due to insufficient pressing. Can be prevented and a decrease in adhesive strength can be prevented.
  • the liquid crystal driving IC 18 is pressed by the heating and pressing head 30, and ultraviolet rays are irradiated by the ultraviolet irradiator 31.
  • the ultraviolet irradiator 31 may keep the illuminance constant, but may increase or decrease the illuminance step by step. Further, the illuminance may be increased or decreased stepwise, or may be continuously increased or decreased.
  • the ultraviolet irradiator 31 By changing the irradiation amount by the ultraviolet irradiator 31, depending on the fluidity of the binder resin, the action of crushing the conductive particles 4 between the terminal portion 17 a of the transparent electrode 17 and the electrode terminal of the liquid crystal driving IC 18, etc.
  • the progress of the curing reaction of the binder resin irradiated with ultraviolet rays can be arbitrarily controlled.
  • connection body in which the transparent substrate 12 and the liquid crystal driving IC 18 and the flexible substrate 21 are connected via the anisotropic conductive film 1 can be manufactured. Note that these COG mounting and FOG mounting may be performed simultaneously.
  • the COG mounting in which the liquid crystal driving IC is directly mounted on the glass substrate of the liquid crystal display panel and the FOG mounting in which the flexible substrate is directly mounted on the substrate of the liquid crystal display panel have been described as examples. If it is the manufacturing process of the connection body using the type
  • the present invention can also use a photocurable conductive adhesive that is cured by light of other wavelengths such as infrared light.
  • the anisotropic conductive film 1 having a film shape as a conductive adhesive has been described, but there is no problem even if it is in a paste form. Moreover, even if this invention is used for the connection process by the insulating adhesive film which consists of the binder resin layer which does not contain the electroconductive particle 4, and the paste-form binder resin which does not contain the electroconductive particle 4, it uses. Good. As long as the adhesive according to the present invention is an adhesive for circuit connection containing a photopolymerization initiator, the presence or absence of the conductive particles 4 or the form of a film, a paste or the like is not limited.
  • connection state between the IC chip and the substrate is determined as a conduction resistance value ( ⁇ ) and an adhesion strength of the IC chip ( kgf).
  • An anisotropic conductive film A comprising a binder resin layer containing a photoacid generator and a cationic polymerizable compound was prepared as an adhesive used for connection.
  • This binder resin layer Phenoxy resin (YP-50: manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.); 45 parts by mass epoxy resin (bis A type) (Epicoat 828: manufactured by Mitsubishi Chemical Corporation); 45 parts by mass silane coupling agent (KBM-403: Shin-Etsu Chemical) Manufactured by Kogyo Co., Ltd.); 2 parts by mass photoacid generator (Irgacure 250: manufactured by BASF Japan Ltd.); 8 parts by mass of ethyl acetate / toluene is used to prepare a mixed solution so that the solid content is 50%.
  • Particles (AUL704: manufactured by Sekisui Chemical Co., Ltd.) were dispersed so as to have a particle density of 50,000 particles / mm 2 . This mixed solution was applied onto a 50 ⁇ m thick PET film, dried in an oven at 70 ° C. for 5 minutes, and formed into a 20 ⁇ m thick film.
  • an anisotropic conductive film B composed of a binder resin layer containing a photo radical initiator and a radical polymerizable compound was prepared as an adhesive used for connection.
  • This binder resin layer Phenoxy resin (YP-50: manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.); 45 parts by mass isocyanuric acid EO-modified diacrylate (M-215: manufactured by Toagosei Co., Ltd.); 45 parts by mass of silane coupling agent (KBM-403: Shin-Etsu Chemical) Manufactured by Kogyo Co., Ltd.); 2 parts by mass photoradical generator (Irgacure 369: manufactured by BASF Japan Co., Ltd.); Particles (AUL704: manufactured by Sekisui Chemical Co., Ltd.) were dispersed so as to have a particle density of 50,000 particles / mm 2 .
  • This mixed solution was applied onto a 50 ⁇ m thick PET film, dried in an oven at 70 ° C. for 5 minutes, and formed into a 20 ⁇ m thick film.
  • Outline 1.8mm x 20mm Bump height: 15 ⁇ m IC for evaluation was used.
  • An ITO coating lath having a thickness of 0.5 mm was used as an evaluation substrate to which an evaluation IC was connected.
  • An IC for evaluation was placed on the glass substrate via the anisotropic conductive film, and connected by heat pressing with a heating press head and ultraviolet irradiation to form a connected body sample.
  • the temperature of the heating and pressing head is 100 ° C.
  • the pressing conditions are all 80 MPa, and 3 to 14 seconds.
  • the heat pressing surface of the heating and pressing head is processed with a fluororesin having a thickness of 50 ⁇ m.
  • Example 1 and Example 8 In Example 1, the anisotropic conductive film A was used. In Example 8, the anisotropic conductive film B was used. In Example 1 and Example 8, the total heat pressing time by the heating and pressing head is set to 5 seconds, ultraviolet irradiation is performed for 2 seconds 1 second after the start of heat pressing, and heat pressing is performed 2 times after the end of ultraviolet irradiation. Continued for seconds. That is, in Example 1 and Example 8, the preheating time before ultraviolet irradiation was 1 second, the ultraviolet irradiation time was 2 seconds, and the thermal pressing time after completion of ultraviolet irradiation was 2 seconds. The ultraviolet irradiation time is 40% of the total heat pressing time.
  • Example 2 and Example 9 In Example 2, the anisotropic conductive film A was used. In Example 9, the anisotropic conductive film B was used. Further, in Example 2 and Example 9, the total heat pressing time by the heating and pressing head is set to 6 seconds, the ultraviolet irradiation is performed for 2 seconds 1 second after the start of the thermal pressing, and the thermal pressing is performed 3 times after the ultraviolet irradiation is completed. Continued for seconds. That is, in Example 2 and Example 9, the preceding heat pressurization time before ultraviolet irradiation was 1 second, the ultraviolet irradiation time was 2 seconds, and the heat pressurization time after completion of ultraviolet irradiation was 3 seconds. The ultraviolet irradiation time is 33% of the total heat pressing time.
  • Example 3 and Example 10 In Example 3, the anisotropic conductive film A was used. In Example 10, the anisotropic conductive film B was used. In Example 3 and Example 10, the total heat pressing time by the heating and pressing head is set to 7 seconds, ultraviolet irradiation is performed for 2 seconds 1 second after the start of heat pressing, and heat pressing is performed 4 times after the ultraviolet irradiation is completed. Continued for seconds. That is, in Example 3 and Example 10, the preceding heat pressurization time before ultraviolet irradiation was 1 second, the ultraviolet irradiation time was 2 seconds, and the heat pressurization time after completion of ultraviolet irradiation was 4 seconds. The ultraviolet irradiation time is 28% of the total thermal pressing time, and the thermal pressing time after the irradiation is 57% of the total thermal pressing time.
  • Example 4 Example 11
  • the anisotropic conductive film A was used.
  • the anisotropic conductive film B was used.
  • the total heat pressurizing time by the heating and pressing head is set to 8 seconds, UV irradiation is performed for 2 seconds 1 second after the start of heat pressurization, and heat pressurization is performed 5 times after the end of UV irradiation.
  • the preceding heat pressurization time before ultraviolet irradiation was 1 second
  • the ultraviolet irradiation time was 2 seconds
  • the heat pressurization time after completion of ultraviolet irradiation was 5 seconds.
  • the ultraviolet irradiation time is 25% of the total heat pressing time, and the heat pressing time after the irradiation is 62% of the total heat pressing time.
  • Example 5 In Example 5, the anisotropic conductive film A was used. In Example 12, the anisotropic conductive film B was used. Further, in Example 5 and Example 12, the total heat pressing time by the heating and pressing head is 13 seconds, ultraviolet irradiation is performed for 2 seconds 1 second after the start of heat pressing, and heat pressing is performed 10 seconds after the ultraviolet irradiation is completed. Continued for seconds. That is, in Example 5 and Example 12, the preceding thermal pressurization time before ultraviolet irradiation was 1 second, the ultraviolet irradiation time was 2 seconds, and the thermal pressurization time after completion of ultraviolet irradiation was 10 seconds. The ultraviolet irradiation time is 15% of the total heat pressing time, and the heat pressing time after the irradiation is 77% of the total heat pressing time.
  • Example 6 and Example 13 In Example 6, the anisotropic conductive film A was used. In Example 13, the anisotropic conductive film B was used. In Example 6 and Example 13, the total thermal pressing time by the heating and pressing head is set to 5 seconds, ultraviolet irradiation is performed for 2 seconds 2 seconds after the start of thermal pressing, and thermal pressing is performed 1 after the completion of ultraviolet irradiation. Continued for seconds. That is, in Example 6 and Example 13, the preceding heat pressurization time before ultraviolet irradiation was 2 seconds, the ultraviolet irradiation time was 2 seconds, and the heat pressurization time after completion of ultraviolet irradiation was 1 second. The ultraviolet irradiation time is 40% of the total heat pressing time.
  • Example 7 In Example 7, the anisotropic conductive film A was used. In Example 14, the anisotropic conductive film B was used. Further, in Example 7 and Example 14, the total heat pressing time by the heating and pressing head is set to 14 seconds, the ultraviolet irradiation is performed for 2 seconds after the start of the heat pressing, and the heat pressing is performed after the ultraviolet irradiation is finished. Continued for seconds. That is, in Example 7 and Example 14, the preceding thermal pressurization time before ultraviolet irradiation was 2 seconds, the ultraviolet irradiation time was 2 seconds, and the thermal pressurization time after the ultraviolet irradiation was finished was 10 seconds. The ultraviolet irradiation time is 14% of the total heat pressing time, and the heat pressing time after the irradiation is 71% of the total heat pressing time.
  • Comparative Example 1 In Comparative Example 1, the anisotropic conductive film A was used. In Comparative Example 6, the anisotropic conductive film B was used. Moreover, in Comparative Example 1 and Comparative Example 6, the total heat pressing time by the heating and pressing head was set to 5 seconds, and the ultraviolet irradiation was started simultaneously with the thermal pressing, and the ultraviolet irradiation was ended simultaneously with the end of the thermal pressing. That is, in Comparative Example 1 and Comparative Example 6, the heat pressurization time and the ultraviolet irradiation time were the same, and the preceding heat pressurization time and the heat pressurization time after completion of the ultraviolet irradiation were not provided.
  • Comparative Example 2 Comparative Example 7
  • the anisotropic conductive film A was used.
  • the anisotropic conductive film B was used.
  • the total heat pressing time by the heating and pressing head was set to 5 seconds, and ultraviolet irradiation was performed for 4 seconds 1 second after the start of heat pressing. That is, in Comparative Example 2 and Comparative Example 7, the preceding heat pressing time before ultraviolet irradiation was 1 second, the ultraviolet irradiation time was 4 seconds, and no heat pressing time after the ultraviolet irradiation was completed.
  • the ultraviolet irradiation time is 80% of the total heat pressing time.
  • Comparative Example 3 Comparative Example 8
  • the anisotropic conductive film A was used.
  • the anisotropic conductive film B was used.
  • the total heat pressing time by the heating and pressing head was set to 5 seconds, and ultraviolet irradiation was performed for 3 seconds 2 seconds after the start of heat pressing. That is, in Comparative Example 3 and Comparative Example 8, the preceding heat pressurization time before ultraviolet irradiation was 2 seconds, the ultraviolet irradiation time was 3 seconds, and no heat pressurization time after completion of ultraviolet irradiation was provided.
  • the ultraviolet irradiation time is 60% of the total heat pressing time.
  • Comparative Example 4 In Comparative Example 4, the anisotropic conductive film A was used. In Comparative Example 9, the anisotropic conductive film B was used. In Comparative Example 4 and Comparative Example 9, the total heat pressing time by the heating and pressing head was 5 seconds, and ultraviolet irradiation was performed for 2 seconds 3 seconds after the start of heat pressing. That is, in Comparative Example 4 and Comparative Example 9, the preceding heat pressurization time before ultraviolet irradiation was 3 seconds, the ultraviolet irradiation time was 2 seconds, and no heat pressurization time after completion of ultraviolet irradiation was provided. The ultraviolet irradiation time is 40% of the total heat pressing time.
  • Comparative Example 5 In Comparative Example 5, the anisotropic conductive film A was used. In Comparative Example 10, the anisotropic conductive film B was used. In Comparative Example 5 and Comparative Example 10, the total heat pressing time by the heating and pressing head was 3 seconds, and ultraviolet irradiation was performed for 2 seconds 1 second after the start of heat pressing. That is, in Comparative Example 5 and Comparative Example 10, the preceding heat pressurization time before ultraviolet irradiation was 1 second, the ultraviolet irradiation time was 2 seconds, and no heat pressurization time after completion of ultraviolet irradiation was provided. The ultraviolet irradiation time is 67% of the total heat pressing time.
  • the conduction resistance value is measured when a digital multimeter is connected to the ITO coating lath wiring 43 connected to the bump 42 of the evaluation IC and a current of 2 mA is applied by the so-called four-terminal method.
  • the conduction resistance value of was measured.
  • the connection strength (kgf / IC) of the evaluation IC was measured.
  • the target of the adhesive strength was 100 kgf / IC.
  • connection body sample formed using the anisotropic conductive film A The measurement results of the connection body sample formed using the anisotropic conductive film A are shown in Table 1, and the measurement results of the connection body sample formed using the anisotropic conductive film B are shown in Table 2.
  • the connector samples according to Examples 1 to 7 using the anisotropic conductive film A and the connector samples according to Examples 8 to 14 using the anisotropic conductive film B In both cases, the initial conduction resistance is as low as less than 2.0 ⁇ , and the conduction resistance after the reliability test is also as low as less than 5.0 ⁇ . In addition, all of the connected body samples according to Examples 1 to 14 were firmly bonded such that the adhesive strength of the evaluation IC was 100 kgf / IC or more.
  • connection body samples according to Comparative Examples 1 to 5 using the anisotropic conductive film A and the connection body samples according to Comparative Examples 6 to 10 using the anisotropic conductive film B are initially conductive.
  • the resistance was as high as 2.0 ⁇ or more, and the conduction resistance increased to 5.0 ⁇ or more after the reliability test.
  • the adhesion strength of the evaluation IC was less than 100 kgf / IC, which was less than the target value.
  • the heat pressing process is continued even after the end of the ultraviolet irradiation, so that the evaluation resin and the ITO coating lath are sufficiently infiltrated while suppressing the progress of the curing reaction of the binder resin. This is because the adhesion strength of the evaluation IC to the ITO coating lath can be improved.
  • the adhesive strength can be further improved by applying heat and pressure for 4 seconds or more after the end of ultraviolet irradiation. That is, it is preferable to provide 57% or more of the total heat pressurization time for continuing the heating and pressing after completion of the ultraviolet irradiation. This is because the binder resin penetrates more between the IC for evaluation and the ITO coating lath by continuing the thermal pressurization together with the activity of the photopolymerization initiator, thereby improving the adhesion.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Abstract

L'invention concerne un procédé de production de corps de connexion et un procédé de connexion de composant électronique qui sont conçus de telle sorte que des composants électroniques sont connectés à basse température en utilisant un adhésif photo-durcissable et des connexions de composants électroniques médiocres sont évitées. Un composant électronique (18) est disposé sur un substrat transparent (12) via un adhésif de connexion de circuit (1) contenant un initiateur de photopolymérisation. Un chauffage et un éclairage sont réalisés tout en pressant le composant électronique (18) contre le substrat transparent (12), et l'éclairage est arrêté tout en poursuivant le chauffage et la pression.
PCT/JP2015/051464 2014-01-21 2015-01-21 Procédé de production de corps de connexion et procédé de connexion de composant électronique WO2015111599A1 (fr)

Applications Claiming Priority (2)

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JP2014009002A JP2015138850A (ja) 2014-01-21 2014-01-21 接続体の製造方法、電子部品の接続方法
JP2014-009002 2014-01-21

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10340927A (ja) * 1997-06-06 1998-12-22 Matsushita Electron Corp 半導体装置の製造方法およびボンディング装置
JP2000169821A (ja) * 1998-09-30 2000-06-20 Three Bond Co Ltd 紫外線硬化性異方導電接着剤
JP2009013316A (ja) * 2007-07-06 2009-01-22 Toyo Ink Mfg Co Ltd 接着剤組成物およびそれを用いた接着フィルム、接着物の製造方法
WO2013121858A1 (fr) * 2012-02-14 2013-08-22 デクセリアルズ株式会社 Procédé de fabrication de corps de connexion, et procédé de connexion

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10340927A (ja) * 1997-06-06 1998-12-22 Matsushita Electron Corp 半導体装置の製造方法およびボンディング装置
JP2000169821A (ja) * 1998-09-30 2000-06-20 Three Bond Co Ltd 紫外線硬化性異方導電接着剤
JP2009013316A (ja) * 2007-07-06 2009-01-22 Toyo Ink Mfg Co Ltd 接着剤組成物およびそれを用いた接着フィルム、接着物の製造方法
WO2013121858A1 (fr) * 2012-02-14 2013-08-22 デクセリアルズ株式会社 Procédé de fabrication de corps de connexion, et procédé de connexion

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