WO2015107568A1 - Method for manufacturing connector - Google Patents

Method for manufacturing connector Download PDF

Info

Publication number
WO2015107568A1
WO2015107568A1 PCT/JP2014/000255 JP2014000255W WO2015107568A1 WO 2015107568 A1 WO2015107568 A1 WO 2015107568A1 JP 2014000255 W JP2014000255 W JP 2014000255W WO 2015107568 A1 WO2015107568 A1 WO 2015107568A1
Authority
WO
WIPO (PCT)
Prior art keywords
resin
contact pin
resin substrate
substrate
pin pattern
Prior art date
Application number
PCT/JP2014/000255
Other languages
French (fr)
Japanese (ja)
Inventor
佐野　孝史
常徳 寺田
Original Assignee
株式会社Ｌｅａｐ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社Ｌｅａｐ filed Critical 株式会社Ｌｅａｐ
Priority to PCT/JP2014/000255 priority Critical patent/WO2015107568A1/en
Priority to JP2014520091A priority patent/JP5575348B1/en
Priority to TW103144252A priority patent/TW201541767A/en
Publication of WO2015107568A1 publication Critical patent/WO2015107568A1/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/003—3D structures, e.g. superposed patterned layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/54—Electroplating of non-metallic surfaces
    • C25D5/56—Electroplating of non-metallic surfaces of plastics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H01R43/20—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for assembling or disassembling contact members with insulating base, case or sleeve
    • H01R43/24—Assembling by moulding on contact members

Definitions

  • a contact pin as described in Patent Document 1 or a contact pin as described in Patent Document 2 is manufactured by press punching, and resin injection is separately performed. What is mounted in the insulation housing produced by shaping
  • the present invention has been made to solve the above-described problem, and a plurality of contact pins arranged at a predetermined pitch are arranged in a state of being established on a resin substrate, and the resin substrate and the contact pins are integrally formed.
  • An object of the present invention is to provide a method for manufacturing a connector.
  • the second manufacturing method of the connector according to the present invention is a manufacturing method of a connector in which one end of a plurality of contact pins is embedded in a resin substrate and a plurality of contact pins are formed on the surface of the resin substrate.
  • Preparing a transfer mold having a contact pin pattern imprinted with a first depth d1, and a resin substrate having a resin coated on the surface with a predetermined thickness d3 (d3 ⁇ d1); Pressing the mold against the surface of the resin substrate to produce a reverse contact pin pattern imprinted on the resin substrate with the second depth d2 (d2 d1-d3); removing the transfer mold;
  • a step of producing a resin mold engraved with a pin pattern, a step of forming a metal seed film on the surface of the resin mold, and a mold in a region where the inverted contact pin pattern is not formed Removing the seed film; forming a conductive layer filling the region in which the reverse contact pin pattern is imprinted by electroplating with the metal seed
  • a connector manufacturing method in which one end of a plurality of contact pins is embedded in a resin substrate and a plurality of contact pins are formed on the surface of the resin substrate.
  • a transfer mold having a contact pin pattern engraved with a first depth d1, a resin having a predetermined thickness d3 (d3 ⁇ d1) applied to the surface, and a metal substrate attached to the back surface
  • a resin substrate having a thickness d2 (d2 d1-d3), and a reverse contact pin stamped at a first depth d1 reaching the metal substrate by pressing the transfer mold against the surface of the resin substrate
  • a pattern forming step a transfer mold is removed, a resin mold on which a reverse contact pin pattern is engraved, and a reverse contact pin by electroplating with a metal substrate as a base.
  • the present invention is characterized in that, in any one of the first to third methods, the transfer mold is made of Si or Ni.
  • the present invention is characterized in that, in any one of the first to third methods, the electroplating is copper plating, phosphor bronze plating, or nickel cobalt alloy plating.
  • the present invention is characterized in that the metal seed film is made of any one of Cu, Ni, Sn, or Al.
  • a connector in which a resin substrate and a contact pin are integrally formed in a state where the contact pin is established on the resin substrate. Therefore, a connector having contact pins arranged at a narrow pitch can be manufactured at a low cost.
  • Sectional drawing according to process of the connector produced with the manufacturing method by 1st Embodiment of this invention (the 1). Sectional drawing according to process of the connector produced with the manufacturing method by 1st Embodiment of this invention (the 2). Sectional drawing according to process of the connector produced with the manufacturing method by 1st Embodiment of this invention (the 3). Sectional drawing according to process of the connector produced with the manufacturing method by 1st Embodiment of this invention (the 4). Sectional drawing according to process of the connector produced with the manufacturing method by 1st Embodiment of this invention (the 5).
  • Sectional drawing according to process of the connector produced with the manufacturing method by 1st Embodiment of this invention (the 6). Sectional drawing according to process of the connector produced with the manufacturing method by 1st Embodiment of this invention (the 7). Sectional drawing according to process of the connector produced with the manufacturing method by 1st Embodiment of this invention (the 8). Sectional drawing according to process of the connector produced with the manufacturing method by 1st Embodiment of this invention (the 9). Sectional drawing according to process of the connector produced with the manufacturing method by 2nd Embodiment of this invention. Sectional drawing according to process of the connector produced with the manufacturing method by 3rd Embodiment of this invention (the 1).
  • U-shaped contact pins 110-1, 110-2,... 110-20 are divided into two rows and arranged at a predetermined pitch.
  • the shape and number of contact pins are not limited to this.
  • the pin widths W1, W2, W3 and the length l of the contact pins 110 of the connector 1000 shown in FIG. 1A are about 120 ⁇ m, 160 ⁇ m, 30 ⁇ m and 320 ⁇ m, respectively.
  • the contact pin 110-n has a lower end 112 embedded in the resin substrate 100 and an upper end 114 formed on the surface of the resin substrate 100.
  • the material of the contact pin 110 is not particularly limited as long as it is a conductive material that can be formed by electroplating (electrocasting). However, in view of the characteristics of the contact pin, elasticity of copper, phosphor bronze, nickel cobalt alloy, etc. Good material should be used. As the shape of the contact pin, various shapes can be used according to the shape of the mating member to be engaged.
  • a resin 400 that can be dissolved in an organic solvent in a later step is poured into the gap d3 while holding the transfer mold 200, and then cured. If a heat polymerization resin is used as the resin 400, it can be easily cured by heating after pouring. After that, as shown in FIG. 2D, the transfer mold 200 is removed, and the resin substrate 300 and the resin 400 on which the inverted contact pin patterns 300-1, 300-2,.
  • an inverted contact pin pattern 300-1 is formed by electroplating (electroforming) as shown in FIG. , 300-2,..., 300-n are electrodeposited with copper, phosphor bronze, nickel cobalt alloy or the like so as to fill the region marked with 300-n, and the conductor layers 700-1, 700-2,. , 700-n.
  • the connector is completed by forming it in the state.
  • the electrodes of the contact pins 800-1, 800-2,..., 800-n are taken out from the back surface 300R of the resin substrate 300, the back surface 300R is connected to the contact pin 800 as shown in FIG.
  • each contact pin 800-1, 800-2,..., 800-n to be formed is connected to one frame at one end so as to be reversed contact pin patterns 300-1, 300-. 2,..., 300-n, and each contact pin may be separated from the frame after electroplating is completed.
  • FIG. 3 is a cross-sectional view by process for explaining the second embodiment.
  • the transfer mold is pressed against the resin substrate to produce an inverted contact pin pattern, and then the resin is injected while the transfer mold is held.
  • An inversion contact pin pattern is produced with a resin applied to the surface of the substrate.
  • a transfer mold 200 having contact pin patterns 200-1, 200-2,..., 200-n engraved with a depth d1, and a predetermined thickness d3.
  • a resin substrate 300 having a surface coated with a thermoplastic resin 400 that can be dissolved in an organic solvent at (d3 ⁇ d1) is prepared.
  • the resin 400 is heated and cured after application.
  • Inverted contact pin patterns 300-1, 300-2,..., 300-n are produced.
  • the following steps are the same as those in the first embodiment.
  • FIG. 4 is a cross-sectional view by process for explaining the third embodiment.
  • the metal seed film is used for electroplating.
  • the metal seed film is not used, and the metal substrate attached to the back surface of the resin substrate is electroplated. It is characterized in that it is used as a base for this purpose.
  • a material of the metal substrate 900 Ni, Ti, SUS, Ni alloy or the like is used.
  • the transfer mold 200 is pressed against the surface of the resin substrate 300 on which the resin 400 is applied, and the inverted contact pin pattern is stamped at a depth d1 reaching the metal substrate 900.
  • 300-1, 300-2,..., 300-n are manufactured.
  • a part of the resin 400 and / or the resin substrate 300 is left behind on the bottom surfaces of the inverted contact pin patterns 300-1, 300-2,..., 300-n 350-1, 350-2,. ⁇ It may remain thin as 350-n.
  • the transfer mold 200 is removed, and the resin substrate 300 and the resin 400 on which the inverted contact pin patterns 300-1, 300-2,.
  • a resin mold 500 is prepared.
  • the remaining residues 350-1, 350-2,..., 350-n are removed by dry etching such as sputtering or RIE, and a resin mold 500 is formed on a metal substrate 900 as shown in FIG. It is assumed that it is placed.
  • this metal substrate 900 as a base, as shown in FIG. 4E, the region where the inversion contact pin patterns 300-1, 300-2,..., 300-n are engraved is filled by electroplating. Then, plating is performed to form conductor layers 700-1, 700-2,..., 700-n.
  • the growth of electroplating proceeds uniformly in the height direction, so that there is an advantage that the material of the contact pin is stabilized.
  • Resin substrate 110, 110-1, 110-2,..., 110-n Contact pin 200: Transfer mold 200-1, 200-2,..., 200-n: Contact pin pattern 300-1, 300-2, ..., 300-n: Inverted contact pin pattern 400: Resin 500: Resin mold 600: Metal seed film 700-1, 700-2, ..., 700-n: Conductor Layer 800-1, 800-2,..., 800-n: contact pin

Abstract

A resin mold, comprising a thermosetting resin substrate on which an inverted contact pin pattern is printed and a thermoplastic resin, is used to form a contact pin pattern in the resin mold, after which the thermoplastic resin is dissolved, thereby manufacturing a connector having a structure wherein multiple contact pins are established on the surface of the resin substrate.

Description

コネクタの製造方法Connector manufacturing method
　本発明は、互いに絶縁された複数のコンタクトピンが樹脂基板上に一端を固定され、樹立した状態で配置される構造を有するコネクタの製造方法に関する。 The present invention relates to a method of manufacturing a connector having a structure in which a plurality of contact pins insulated from each other are fixed on a resin substrate and arranged in an established state.
　近年のスマートフォンやタブレット端末などのモバイル機器の多機能化に伴い、これらの機器内で使用されるコネクタも、小型化、コンタクトピンの多極化、コンタクトピンの高密度化が進んでいる。 With the recent increase in functionality of mobile devices such as smartphones and tablet terminals, the connectors used in these devices are also becoming smaller, more multi-contact pins, and higher contact pins.
　このようなコネクタの製造方法としては、特許文献１に記載されるようなインサート成形方式を用いるものや、特許文献２に記載されるようなコンタクトピンをプレス打抜き加工により作製し、別途樹脂の射出成形で作製された絶縁ハウジングに実装するものが知られている。 As a manufacturing method of such a connector, a contact pin as described in Patent Document 1 or a contact pin as described in Patent Document 2 is manufactured by press punching, and resin injection is separately performed. What is mounted in the insulation housing produced by shaping | molding is known.
特開２００６－２０２６０９号公報JP 2006-202609 A 特開２００６－２２８６１２号公報JP 2006-228612 A
　上述した特許文献１，２に記載されたコネクタの製造方法では、コンタクトピンの作製にはいずれもプレス打ち抜き加工を用いているため、コンタクトピンのピッチが更に小さくなってくると、コンタクトピンの作製や配置が困難になるという課題を有している。また、コンタクトピンと絶縁ハウジングとを別々に作製して、絶縁ハウジングにコンタクトピンを実装させる形態を採用しているため、作業工数が増大し、作製コストが上昇するだけでなく、更なる小型化が困難になるという課題も有している。 In the connector manufacturing methods described in Patent Documents 1 and 2, the contact pins are manufactured by press punching. Therefore, when the contact pin pitch is further reduced, the contact pins are manufactured. And has a problem that placement becomes difficult. In addition, since the contact pin and the insulating housing are separately manufactured and the contact pin is mounted on the insulating housing, the work man-hour is increased, the manufacturing cost is increased, and further downsizing is achieved. It also has the problem of becoming difficult.
　本発明は、上記課題を解決するためになされたもので、所定ピッチで配列された複数のコンタクトピンを樹脂基板上に樹立した状態で配列し、樹脂基板とコンタクトピンとを一体として形成するようにしたコネクタの製造方法を提供することを目的とする。 The present invention has been made to solve the above-described problem, and a plurality of contact pins arranged at a predetermined pitch are arranged in a state of being established on a resin substrate, and the resin substrate and the contact pins are integrally formed. An object of the present invention is to provide a method for manufacturing a connector.
　上記課題は、以下の本発明によって達成することができる。 The above-described problems can be achieved by the following present invention.
　本発明のコネクタの第１の製造方法では、複数のコンタクトピンの一端同士を樹脂基板に埋め込んで、樹脂基板の表面に複数のコンタクトピンが樹立した状態で形成されるコネクタの製造方法であって、第１の深さｄ１で刻印されたコンタクトピンパターンを有する転写金型と、樹脂基板とを準備するステップと、転写金型を樹脂基板に押圧し、樹脂基板の表面に第２の深さｄ２（ｄ２＜ｄ１）で刻印された反転コンタクトピンパターンを作製するステップと、転写金型を保持した状態で転写金型と樹脂基板との間隙に樹脂を注入し硬化させるステップと、転写金型を除去し、反転コンタクトピンパターンが刻印された樹脂金型を作製するステップと、樹脂金型の表面に金属シード膜を形成するステップと、反転コンタクトピンパターンが形成されていない領域の金属シード膜を除去するステップと、金属シード膜を下地として電気めっきにより反転コンタクトピンパターンが刻印されている領域を埋める導体層を形成するステップと、硬化した樹脂を溶解させ、複数のコンタクトピンを樹脂基板上に所定の高さｄ３（ｄ３＝ｄ１－ｄ２）で樹立させるステップと、を有することを特徴とする。 In the first manufacturing method of the connector of the present invention, a connector manufacturing method is formed in which one end of a plurality of contact pins is embedded in a resin substrate and a plurality of contact pins are established on the surface of the resin substrate. , A step of preparing a transfer mold having a contact pin pattern imprinted with a first depth d1 and a resin substrate; and pressing the transfer mold against the resin substrate, and a second depth on the surface of the resin substrate a step of producing a reversal contact pin pattern imprinted with d2 (d2 <d1), a step of injecting a resin into the gap between the transfer mold and the resin substrate while holding the transfer mold, and curing, and a transfer mold And a step of forming a resin mold engraved with a reverse contact pin pattern, a step of forming a metal seed film on the surface of the resin mold, and a reverse contact pin pattern Removing the metal seed film in the unformed region, forming a conductive layer filling the region in which the reverse contact pin pattern is imprinted by electroplating with the metal seed film as a base, and dissolving the cured resin And a step of establishing a plurality of contact pins on the resin substrate at a predetermined height d3 (d3 = d1-d2).
　また、本発明のコネクタの第２の製造方法では、複数のコンタクトピンの一端同士を樹脂基板に埋め込んで樹脂基板の表面に複数のコンタクトピンが樹立した状態で形成されるコネクタの製造方法であって、第１の深さｄ１で刻印されたコンタクトピンパターンを有する転写金型と、所定の厚さｄ３（ｄ３＜ｄ１）で樹脂が表面に塗布された樹脂基板とを準備するステップと、転写金型を樹脂基板の表面に押圧して樹脂基板に第２の深さｄ２（ｄ２＝ｄ１－ｄ３）で刻印された反転コンタクトピンパターンを作製するステップと、転写金型を除去し、反転コンタクトピンパターンが刻印された樹脂金型を作製するステップと、樹脂金型の表面に金属シード膜を形成するステップと、反転コンタクトピンパターンが形成されていない領域の金属シード膜を除去するステップと、金属シード膜を下地として電気めっきにより反転コンタクトピンパターンが刻印されている領域を埋める導体層を形成するステップと、塗布された樹脂を溶解させ、複数のコンタクトピンを樹脂基板上に所定の高さｄ３で樹立させるステップと、を有することを特徴とする。 Further, the second manufacturing method of the connector according to the present invention is a manufacturing method of a connector in which one end of a plurality of contact pins is embedded in a resin substrate and a plurality of contact pins are formed on the surface of the resin substrate. Preparing a transfer mold having a contact pin pattern imprinted with a first depth d1, and a resin substrate having a resin coated on the surface with a predetermined thickness d3 (d3 <d1); Pressing the mold against the surface of the resin substrate to produce a reverse contact pin pattern imprinted on the resin substrate with the second depth d2 (d2 = d1-d3); removing the transfer mold; A step of producing a resin mold engraved with a pin pattern, a step of forming a metal seed film on the surface of the resin mold, and a mold in a region where the inverted contact pin pattern is not formed Removing the seed film; forming a conductive layer filling the region in which the reverse contact pin pattern is imprinted by electroplating with the metal seed film as a base; and dissolving the applied resin to form a plurality of contact pins. And establishing a predetermined height d3 on the resin substrate.
　また、本発明のコネクタの第３の製造方法では、複数のコンタクトピンの一端同士を樹脂基板に埋め込んで、樹脂基板の表面に複数のコンタクトピンが樹立した状態で形成されるコネクタの製造方法であって、第１の深さｄ１で刻印されたコンタクトピンパターンを有する転写金型と、所定の厚さｄ３（ｄ３＜ｄ１）で樹脂が表面に塗布され、金属基板が裏面に貼付された所定の厚さｄ２（ｄ２＝ｄ１－ｄ３）の樹脂基板とを準備するステップと、転写金型を樹脂基板の表面に押圧して金属基板に達する第１の深さｄ１で刻印された反転コンタクトピンパターンを作製するステップと、転写金型を除去し、反転コンタクトピンパターンが刻印された樹脂金型を作製するステップと、金属基板を下地として電気めっきにより反転コンタクトピンパターンが刻印されている領域を埋める導体層を形成するステップと、樹脂を溶解させると共に、金属基板を樹脂基板の裏面から剥離して、複数のコンタクトピンを樹脂基板上に所定の高さｄ３で樹立させるステップとを有することを特徴とする。 Moreover, in the third manufacturing method of the connector according to the present invention, a connector manufacturing method in which one end of a plurality of contact pins is embedded in a resin substrate and a plurality of contact pins are formed on the surface of the resin substrate. A transfer mold having a contact pin pattern engraved with a first depth d1, a resin having a predetermined thickness d3 (d3 <d1) applied to the surface, and a metal substrate attached to the back surface A resin substrate having a thickness d2 (d2 = d1-d3), and a reverse contact pin stamped at a first depth d1 reaching the metal substrate by pressing the transfer mold against the surface of the resin substrate A pattern forming step, a transfer mold is removed, a resin mold on which a reverse contact pin pattern is engraved, and a reverse contact pin by electroplating with a metal substrate as a base. A step of forming a conductor layer that fills a region in which the pattern is imprinted, and dissolving the resin, peeling the metal substrate from the back surface of the resin substrate, and a plurality of contact pins on the resin substrate at a predetermined height d3 And a step of establishing.
　また、本発明は、第１乃至第３のいずれかの方法において、樹脂基板が熱硬化性樹脂又は有機溶剤で溶解不能な熱可塑性樹脂によって作製され、樹脂が前記有機溶剤によって溶解可能な熱可塑性樹脂であることを特徴とする。 According to the present invention, in any one of the first to third methods, the resin substrate is made of a thermosetting resin or a thermoplastic resin that is insoluble in an organic solvent, and the resin can be dissolved in the organic solvent. It is a resin.
　また、本発明は、第１乃至第３のいずれかの方法において、転写金型の押圧による反転コンタクトピンパターンの作製は、インプリント又は熱プレスによって行われることを特徴とする。 Further, the present invention is characterized in that, in any of the first to third methods, the production of the inverted contact pin pattern by pressing the transfer mold is performed by imprinting or hot pressing.
　また、本発明は、第１乃至第３のいずれかの方法において、転写金型は、ＳｉまたはＮｉからなることを特徴とする。 Further, the present invention is characterized in that, in any one of the first to third methods, the transfer mold is made of Si or Ni.
　また、本発明は、第１乃至第３のいずれかの方法において、電気めっきは、銅めっき、リン青銅めっき、又はニッケルコバルト合金めっきであることを特徴とする。 Moreover, the present invention is characterized in that, in any one of the first to third methods, the electroplating is copper plating, phosphor bronze plating, or nickel cobalt alloy plating.
　また、本発明は、第１又は第２の方法において、金属シード膜は、Ｃｕ、Ｎｉ、Ｓｎ、又はＡｌのいずれかからなることを特徴とする。 In the first or second method, the present invention is characterized in that the metal seed film is made of any one of Cu, Ni, Sn, or Al.
　さらに、本発明は、第３の方法において、金属基板が、Ｎｉ、Ｔｉ、ＳＵＳ又はＮｉ合金からなることを特徴とする。 Furthermore, the present invention is characterized in that, in the third method, the metal substrate is made of Ni, Ti, SUS or Ni alloy.
　本発明によれば、コンタクトピンを樹脂基板上に樹立した状態で、樹脂基板とコンタクトピンとが一体として形成されたコネクタを作製することができる。従って狭ピッチで配列されたコンタクトピンを有するコネクタを低コストで作製することができる。 According to the present invention, it is possible to manufacture a connector in which a resin substrate and a contact pin are integrally formed in a state where the contact pin is established on the resin substrate. Therefore, a connector having contact pins arranged at a narrow pitch can be manufactured at a low cost.
本発明により作製されたコネクタの表面形状及びコンタクトピンの形状を示す図。The figure which shows the surface shape of the connector produced by this invention, and the shape of a contact pin. 本発明の第１実施形態による製造方法で作製されるコネクタの工程別断面図（その１）。Sectional drawing according to process of the connector produced with the manufacturing method by 1st Embodiment of this invention (the 1). 本発明の第１実施形態による製造方法で作製されるコネクタの工程別断面図（その２）。Sectional drawing according to process of the connector produced with the manufacturing method by 1st Embodiment of this invention (the 2). 本発明の第１実施形態による製造方法で作製されるコネクタの工程別断面図（その３）。Sectional drawing according to process of the connector produced with the manufacturing method by 1st Embodiment of this invention (the 3). 本発明の第１実施形態による製造方法で作製されるコネクタの工程別断面図（その４）。Sectional drawing according to process of the connector produced with the manufacturing method by 1st Embodiment of this invention (the 4). 本発明の第１実施形態による製造方法で作製されるコネクタの工程別断面図（その５）。Sectional drawing according to process of the connector produced with the manufacturing method by 1st Embodiment of this invention (the 5). 本発明の第１実施形態による製造方法で作製されるコネクタの工程別断面図（その６）。Sectional drawing according to process of the connector produced with the manufacturing method by 1st Embodiment of this invention (the 6). 本発明の第１実施形態による製造方法で作製されるコネクタの工程別断面図（その７）。Sectional drawing according to process of the connector produced with the manufacturing method by 1st Embodiment of this invention (the 7). 本発明の第１実施形態による製造方法で作製されるコネクタの工程別断面図（その８）。Sectional drawing according to process of the connector produced with the manufacturing method by 1st Embodiment of this invention (the 8). 本発明の第１実施形態による製造方法で作製されるコネクタの工程別断面図（その９）。Sectional drawing according to process of the connector produced with the manufacturing method by 1st Embodiment of this invention (the 9). 本発明の第２実施形態による製造方法で作製されるコネクタの工程別断面図。Sectional drawing according to process of the connector produced with the manufacturing method by 2nd Embodiment of this invention. 本発明の第３実施形態による製造方法で作製されるコネクタの工程別断面図（その１）。Sectional drawing according to process of the connector produced with the manufacturing method by 3rd Embodiment of this invention (the 1). 本発明の第３実施形態による製造方法で作製されるコネクタの工程別断面図（その２）。Sectional drawing according to process of the connector produced with the manufacturing method by 3rd Embodiment of this invention (the 2). 本発明の第３実施形態による製造方法で作製されるコネクタの工程別断面図（その３）。Sectional drawing according to process of the connector produced with the manufacturing method by 3rd Embodiment of this invention (the 3). 本発明の第３実施形態による製造方法で作製されるコネクタの工程別断面図（その４）。Sectional drawing according to process of the connector produced with the manufacturing method by 3rd Embodiment of this invention (the 4). 本発明の第３実施形態による製造方法で作製されるコネクタの工程別断面図（その５）。Sectional drawing according to process of the connector produced with the manufacturing method by 3rd Embodiment of this invention (the 5). 本発明の第３実施形態による製造方法で作製されるコネクタの工程別断面図（その６）。Sectional drawing according to process of the connector produced with the manufacturing method by 3rd Embodiment of this invention (the 6). 本発明の第３実施形態による製造方法で作製されるコネクタの工程別断面図（その７）。Sectional drawing according to process of the connector produced with the manufacturing method by 3rd Embodiment of this invention (the 7).
　以下、添付図面に従って、本発明を詳細に説明する。 Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
　図１は、本発明の製造方法によって作製されたコネクタの表面形状及びコンタクトピンの形状を示す図である。（ａ）は平面図、（ｂ）はコンタクトピンの斜視図である。
　図１（ａ）に示すように、本発明で作製されるコネクタ１０００は、樹脂基板１００の表面に複数のコンタクトピン１１０が、一端同士が樹脂基板１００内に埋め込まれて、表面に樹立した状態で形成される。 FIG. 1 is a view showing the surface shape of a connector and the shape of a contact pin produced by the manufacturing method of the present invention. (A) is a top view, (b) is a perspective view of a contact pin.
As shown in FIG. 1A, the connector 1000 manufactured according to the present invention has a plurality of contact pins 110 embedded on the surface of the resin substrate 100 and one end embedded in the resin substrate 100, and is established on the surface. Formed with.
　図１（ａ）に示したコネクタ１０００ではコ字状の２０本のコンタクトピン１１０－１，１１０－２，・・・１１０－２０が二列に分かれて、所定のピッチで配列されているが、コンタクトピンの形状や本数はこれに限定されるものではない。図１（ａ）に示したコネクタ１０００のコンタクトピン１１０のピン幅Ｗ１，Ｗ２，Ｗ３及び長さｌは、それぞれ、約１２０μ，１６０μ，３０μ及び３２０μである。なお、コンタクトピン１１０－ｎは図１（ｂ）に示すように下端部１１２が樹脂基板１００内に埋め込まれており、上端部１１４が樹脂基板１００の表面に樹立した状態で形成されている。 In the connector 1000 shown in FIG. 1A, 20 U-shaped contact pins 110-1, 110-2,... 110-20 are divided into two rows and arranged at a predetermined pitch. The shape and number of contact pins are not limited to this. The pin widths W1, W2, W3 and the length l of the contact pins 110 of the connector 1000 shown in FIG. 1A are about 120 μm, 160 μm, 30 μm and 320 μm, respectively. As shown in FIG. 1B, the contact pin 110-n has a lower end 112 embedded in the resin substrate 100 and an upper end 114 formed on the surface of the resin substrate 100.
　コンタクトピン１１０の材料は電気めっき（電気鋳造）により形成することのできる導電材料であれば特に限定されるものではないが、コンタクトピンの特質に鑑みると銅、リン青銅、ニッケルコバルト合金などの弾力性のある材料を使用するのが良い。コンタクトピンの形状は係合する相手方部材の形状に応じて種々の形状のものを使用することができる。 The material of the contact pin 110 is not particularly limited as long as it is a conductive material that can be formed by electroplating (electrocasting). However, in view of the characteristics of the contact pin, elasticity of copper, phosphor bronze, nickel cobalt alloy, etc. Good material should be used. As the shape of the contact pin, various shapes can be used according to the shape of the mating member to be engaged.
　次に、本発明によるコネクタの製造方法について説明する。
　図２は本発明の第１の実施形態を説明する工程別断面図で、図１（ａ）のＸ－Ｘ切断線での断面形状を示したものである。 Next, a method for manufacturing a connector according to the present invention will be described.
FIG. 2 is a cross-sectional view by process for explaining the first embodiment of the present invention, and shows a cross-sectional shape taken along the line XX in FIG.
　まず、図２（ａ）に示すように、深さｄ１で刻印されたコンタクトピンパターン２００－１，２００－２，・・・，２００－ｎを有する転写金型２００と、樹脂基板３００とを準備する。
　転写金型２００の材料としては、シリコン（Ｓｉ）またはニッケル（Ｎｉ）を用いることができる。また樹脂基板３００の材料としては、尿素樹脂、メラミン樹脂、フェノール樹脂、熱硬化性プラスチック、エポキシ樹脂又はケイ素樹脂等の熱硬化性樹脂や、ポリイミド又は液晶ポリマ（ＬＣＰ）などの熱可塑性樹脂であって後の工程で有機溶剤で溶解不能な樹脂を使用する。 First, as shown in FIG. 2A, a transfer mold 200 having contact pin patterns 200-1, 200-2,..., 200-n imprinted with a depth d1 and a resin substrate 300 are provided. prepare.
As a material of the transfer mold 200, silicon (Si) or nickel (Ni) can be used. The material of the resin substrate 300 is a thermosetting resin such as urea resin, melamine resin, phenol resin, thermosetting plastic, epoxy resin or silicon resin, or thermoplastic resin such as polyimide or liquid crystal polymer (LCP). In the later step, a resin that cannot be dissolved in an organic solvent is used.
　次に、図２（ｂ）に示すように、転写金型２００を樹脂基板３００の表面に押圧し、表面に深さｄ２で刻印された反転コンタクトピンパターン３００－１，３００－２，・・・，３００－ｎを作製する。この反転コンタクトピンパターン３００－１，３００－２，・・・，３００－ｎの作製はインプリント又は熱プレスにより行われる。この結果、図２ｂに示すように転写金型２００と樹脂基板３００とは間隙ｄ３（＝ｄ１－ｄ２）を保った状態で対向して保持されている状態となる。 Next, as shown in FIG. 2B, the transfer mold 200 is pressed against the surface of the resin substrate 300, and the reverse contact pin patterns 300-1, 300-2,.・, 300-n is manufactured. The reverse contact pin patterns 300-1, 300-2,..., 300-n are produced by imprinting or hot pressing. As a result, as shown in FIG. 2b, the transfer mold 200 and the resin substrate 300 are held facing each other with the gap d3 (= d1-d2) maintained.
　次いで、図２（ｃ）に示すように、後の工程で有機溶剤で溶解可能な樹脂４００を転写金型２００を保持した状態で間隙ｄ３に注入して充填した後、硬化させる。樹脂４００として熱重合型レジンを用いれば、注入後に加熱することにより容易に硬化させることができる。
　その後、図２（ｄ）に示すように転写金型２００を除去して、反転コンタクトピンパターン３００－１，３００－２，・・・，３００－ｎが刻印された樹脂基板３００と樹脂４００とからなる樹脂金型５００を作製する。
　なお、樹脂４００としては、ポリエチレン、ポリスチレン、ポリ塩化ビニルなどの有機溶剤で溶解可能な熱可塑性樹脂を用いると良い。 Next, as shown in FIG. 2C, a resin 400 that can be dissolved in an organic solvent in a later step is poured into the gap d3 while holding the transfer mold 200, and then cured. If a heat polymerization resin is used as the resin 400, it can be easily cured by heating after pouring.
After that, as shown in FIG. 2D, the transfer mold 200 is removed, and the resin substrate 300 and the resin 400 on which the inverted contact pin patterns 300-1, 300-2,. A resin mold 500 made of
Note that as the resin 400, a thermoplastic resin that is soluble in an organic solvent such as polyethylene, polystyrene, or polyvinyl chloride is preferably used.
　次に、後続工程での電気めっき（電気鋳造）処理に備えて、図２（ｅ）に示すように樹脂金型５００の表面を覆うように金属シード膜６００を形成する。
　金属シード膜６００に用いる金属としては、Ｃｕ，Ｓｎ，Ｎｉ，Ａｇ，Ａｌなどが用いられる。この金属シード膜６００の形成は、ＣｕやＮｉなどを無電解めっきすることによっても行うことができるし、蒸着やスパッタ又はＣＶＤによって形成しても良い。 Next, in preparation for an electroplating (electrocasting) process in a subsequent process, a metal seed film 600 is formed so as to cover the surface of the resin mold 500 as shown in FIG.
As a metal used for the metal seed film 600, Cu, Sn, Ni, Ag, Al, or the like is used. The metal seed film 600 can be formed by electroless plating of Cu, Ni, or the like, or by vapor deposition, sputtering, or CVD.
　次いで、図２（ｆ）に示すように樹脂金型５００の表面の反転コンタクトピンパターン３００－１，３００－２，・・・，３００－ｎが形成されていない領域の金属シード膜６００を除去する。これは後続の電気めっき処理によって、反転コンタクトピンパターン３００－１，３００－２，・・・，３００－ｎが形成されていない領域に電着がされないようにするためである。
　金属シード膜の除去は、周知のダマシン法、又は研磨によって行うことができる。 Next, as shown in FIG. 2 (f), the metal seed film 600 in the region where the reverse contact pin patterns 300-1, 300-2,..., 300-n are not formed on the surface of the resin mold 500 is removed. To do. This is to prevent electrodeposition in a region where the inverted contact pin patterns 300-1, 300-2,..., 300-n are not formed by the subsequent electroplating process.
The removal of the metal seed film can be performed by a known damascene method or polishing.
　次にこの残存する金属シード膜６００－１，６００－２，・・・，６００－ｎを下地として、図２（ｇ）に示すように電気めっき（電鋳）により反転コンタクトピンパターン３００－１，３００－２，・・・，３００－ｎが刻印されている領域を埋めるように、銅、リン青銅、ニッケルコバルト合金などを電着させ、導体層７００－１，７００－２，・・・，７００－ｎを形成する。 Next, with the remaining metal seed films 600-1, 600-2,..., 600-n as a base, an inverted contact pin pattern 300-1 is formed by electroplating (electroforming) as shown in FIG. , 300-2,..., 300-n are electrodeposited with copper, phosphor bronze, nickel cobalt alloy or the like so as to fill the region marked with 300-n, and the conductor layers 700-1, 700-2,. , 700-n.
　電気めっきは、反転コンタクトピンパターン３００－１，３００－２，・・・，３００－ｎが刻印されている領域を埋め尽くし、その表面が樹脂金型５００の表面と一致し、平坦となるまで行われる。
　その後、図２（ｈ）に示すように、硬化した樹脂４００を有機溶剤で溶解させ、導体層７００－１，７００－２，・・・，７００－ｎと金属シード層６００－１，６００－２，・・・，６００－ｎとから構成されるコンタクトピン８００－１，８００－２，・・・，８００－ｎを樹脂基板３００上に高さｄ３（ｄ３＝ｄ１－ｄ２）で樹立させた状態で形成することによりコネクタを完成させる。
　なお、コンタクトピン８００－１，８００－２，・・・，８００－ｎの電極を樹脂基板３００の裏面３００Ｒから取り出す場合には、図２（ｉ）に示すように、裏面３００Ｒをコンタクトピン８００－１，８００－２，・・・，８００－ｎに到達するまで研磨して、取出すようにしても良い。
　なお、電気めっきに際しては、形成される各コンタクトピン８００－１，８００－２，・・・，８００－ｎが１つのフレームに一端で連結されるように反転コンタクトピンパターン３００－１，３００－２，・・・，３００－ｎを構成し、電気めっき終了後に、フレームから各コンタクトピンを切離するようにすればよい。 The electroplating fills the region where the inversion contact pin patterns 300-1, 300-2,..., 300-n are engraved, and the surface coincides with the surface of the resin mold 500 and becomes flat. Done.
Thereafter, as shown in FIG. 2 (h), the cured resin 400 is dissolved with an organic solvent, and the conductor layers 700-1, 700-2,..., 700-n and the metal seed layers 600-1, 600- , 800-n are established on the resin substrate 300 at a height d3 (d3 = d1-d2). The connector is completed by forming it in the state.
When the electrodes of the contact pins 800-1, 800-2,..., 800-n are taken out from the back surface 300R of the resin substrate 300, the back surface 300R is connected to the contact pin 800 as shown in FIG. Polishing until reaching −1, 800-2,..., 800-n may be performed.
In the electroplating, each contact pin 800-1, 800-2,..., 800-n to be formed is connected to one frame at one end so as to be reversed contact pin patterns 300-1, 300-. 2,..., 300-n, and each contact pin may be separated from the frame after electroplating is completed.
　次に、本発明の第２の実施形態について説明する。
　図３は第２の実施形態を説明する工程別断面図である。
　第１の実施形態では、転写金型を樹脂基板に押圧して反転コンタクトピンパターンを作製してから、転写金型を保持した状態で樹脂を注入したが、第２の実施形態では、予め樹脂基板の表面に樹脂を塗布した状態で反転コンタクトピンパターンを作製する。 Next, a second embodiment of the present invention will be described.
FIG. 3 is a cross-sectional view by process for explaining the second embodiment.
In the first embodiment, the transfer mold is pressed against the resin substrate to produce an inverted contact pin pattern, and then the resin is injected while the transfer mold is held. An inversion contact pin pattern is produced with a resin applied to the surface of the substrate.
　まず、図３（ａ）に示すように、深さｄ１で刻印されたコンタクトピンパターン２００－１，２００－２，・・・，２００－ｎを有する転写金型２００と、所定の厚さｄ３（ｄ３＜ｄ１）で有機溶剤で溶解可能な熱可塑性樹脂４００が表面に塗布された樹脂基板３００とを準備する。
　樹脂４００は塗布後に加熱して硬化させておく。なお、樹脂４００を塗布するかわりに、熱可塑性樹脂を２層構造にし、有機溶剤によって上部の樹脂のみを除去できるようにした樹脂基板を用いることもできる。 First, as shown in FIG. 3A, a transfer mold 200 having contact pin patterns 200-1, 200-2,..., 200-n engraved with a depth d1, and a predetermined thickness d3. A resin substrate 300 having a surface coated with a thermoplastic resin 400 that can be dissolved in an organic solvent at (d3 <d1) is prepared.
The resin 400 is heated and cured after application. Instead of applying the resin 400, it is also possible to use a resin substrate in which a thermoplastic resin has a two-layer structure and only an upper resin can be removed by an organic solvent.
　次に、図３（ｂ）に示すように、転写金型２００を樹脂４００が塗布された樹脂基板３００の表面に押圧して、樹脂基板３００に深さｄ２（ｄ２＝ｄ１－ｄ３）で刻印された反転コンタクトピンパターン３００－１，３００－２，・・・，３００－ｎを作製する。
　以下の工程は、第１の実施の形態と同様となる。
　最後に塗布された樹脂４００を溶解させ、複数のコンタクトピンを樹脂基板３００上に高さｄ３（ｄ３＝ｄ１－ｄ２）で樹立させた状態で形成する。 Next, as shown in FIG. 3B, the transfer mold 200 is pressed against the surface of the resin substrate 300 coated with the resin 400, and is imprinted on the resin substrate 300 at a depth d2 (d2 = d1-d3). Inverted contact pin patterns 300-1, 300-2,..., 300-n are produced.
The following steps are the same as those in the first embodiment.
Finally, the applied resin 400 is dissolved, and a plurality of contact pins are formed on the resin substrate 300 with a height d3 (d3 = d1-d2).
　次に、本発明の第３の実施形態について説明する。
　図４は、第３の実施形態を説明する工程別断面図である。
　第１及び第２の実施形態では、電気めっきのために金属シード膜を使用したが、本実施形態では、金属シード膜を使用せず、樹脂基板の裏面に貼付された金属基板を電気めっきのための下地として用いることを特徴としている。 Next, a third embodiment of the present invention will be described.
FIG. 4 is a cross-sectional view by process for explaining the third embodiment.
In the first and second embodiments, the metal seed film is used for electroplating. However, in this embodiment, the metal seed film is not used, and the metal substrate attached to the back surface of the resin substrate is electroplated. It is characterized in that it is used as a base for this purpose.
　まず、図４（ａ）に示すように、深さｄ１で刻印されたコンタクトピンパターン２００－１，２００－２，・・・，２００－ｎを有する転写金型３００と、所定の厚さｄ３（ｄ３＜ｄ１）で熱可塑性樹脂４００が表面に塗布され、金属基板９００が裏面に貼付された厚さｄ２（ｄ２＝ｄ１－ｄ３）の樹脂基板３００とを準備する。
　金属基板９００の材料としては、Ｎｉ、Ｔｉ、ＳＵＳ又はＮｉ合金等が使用される。 First, as shown in FIG. 4A, a transfer mold 300 having contact pin patterns 200-1, 200-2,..., 200-n engraved with a depth d1, and a predetermined thickness d3. A resin substrate 300 having a thickness of d2 (d2 = d1-d3) in which the thermoplastic resin 400 is applied to the front surface and the metal substrate 900 is attached to the back surface is prepared at (d3 <d1).
As a material of the metal substrate 900, Ni, Ti, SUS, Ni alloy or the like is used.
　次に、図４（ｂ）に示すように、転写金型２００を樹脂４００が塗布された樹脂基板３００の表面に押圧して、金属基板９００に達する深さｄ１で刻印された反転コンタクトピンパターン３００－１，３００－２，・・・，３００－ｎを作製する。
　この時、反転コンタクトピンパターン３００－１，３００－２，・・・，３００－ｎの底面には樹脂４００及び／又は樹脂基板３００の一部が残査３５０－１，３５０－２，・・・，３５０－ｎとして薄く残存することがある。 Next, as shown in FIG. 4B, the transfer mold 200 is pressed against the surface of the resin substrate 300 on which the resin 400 is applied, and the inverted contact pin pattern is stamped at a depth d1 reaching the metal substrate 900. 300-1, 300-2,..., 300-n are manufactured.
At this time, a part of the resin 400 and / or the resin substrate 300 is left behind on the bottom surfaces of the inverted contact pin patterns 300-1, 300-2,..., 300-n 350-1, 350-2,.・ It may remain thin as 350-n.
　次いで、図４（ｃ）に示すように転写金型２００を除去して、反転コンタクトピンパターン３００－１，３００－２，・・・，３００－ｎが刻印された、樹脂基板３００と樹脂４００とからなる樹脂金型５００を作製する。
　残存する残査３５０－１，３５０－２，・・・，３５０－ｎはスパッタ又はＲＩＥなどのドライエッチングで取り除いて、図４（ｄ）に示すような金属基板９００上に樹脂金型５００が載置された状態とする。
　そして、この金属基板９００を下地として、図４（ｅ）に示すように電気めっきにより反転コンタクトピンパターン３００－１，３００－２，・・・，３００－ｎが刻印されている領域を埋めるように、めっき処理を行い、導体層７００－１，７００－２，・・・，７００－ｎを形成する。 Next, as shown in FIG. 4C, the transfer mold 200 is removed, and the resin substrate 300 and the resin 400 on which the inverted contact pin patterns 300-1, 300-2,. A resin mold 500 is prepared.
The remaining residues 350-1, 350-2,..., 350-n are removed by dry etching such as sputtering or RIE, and a resin mold 500 is formed on a metal substrate 900 as shown in FIG. It is assumed that it is placed.
Then, with this metal substrate 900 as a base, as shown in FIG. 4E, the region where the inversion contact pin patterns 300-1, 300-2,..., 300-n are engraved is filled by electroplating. Then, plating is performed to form conductor layers 700-1, 700-2,..., 700-n.
　その後、図４（ｆ）に示すように硬化した樹脂４００を有機溶剤で溶解させ、更に、図４(ｇ)に示すように金属基板９００を樹脂基板３００の裏面から剥離して、複数のコンタクトピンを樹脂基板３００上に高さｄ３（ｄ３＝ｄ１－ｄ２）で樹立させた状態で形成させる。 Thereafter, the cured resin 400 is dissolved in an organic solvent as shown in FIG. 4F, and the metal substrate 900 is peeled off from the back surface of the resin substrate 300 as shown in FIG. The pins are formed on the resin substrate 300 with a height d3 (d3 = d1-d2).
　第３の実施形態の場合には、第１及び第２の実施形態に比較して電気めっきの成長が高さ方向に均一に進むので、コンタクトピンの材質が安定化するという利点がある。 In the case of the third embodiment, as compared with the first and second embodiments, the growth of electroplating proceeds uniformly in the height direction, so that there is an advantage that the material of the contact pin is stabilized.
　　１００，３００：樹脂基板
　　１１０，１１０－１，１１０－２，・・・，１１０－ｎ：コンタクトピン
　　２００：転写金型
　　２００－１，２００－２，・・・，２００－ｎ：コンタクトピンパターン
　　３００－１，３００－２，・・・，３００－ｎ：反転コンタクトピンパターン
　　４００：樹脂
　　５００：樹脂金型
　　６００：金属シード膜
　　７００－１，７００－２，・・・，７００－ｎ：導体層
　　８００－１，８００－２，・・・，８００－ｎ：コンタクトピン 100, 300: Resin substrate 110, 110-1, 110-2,..., 110-n: Contact pin 200: Transfer mold 200-1, 200-2,..., 200-n: Contact pin pattern 300-1, 300-2, ..., 300-n: Inverted contact pin pattern 400: Resin 500: Resin mold 600: Metal seed film 700-1, 700-2, ..., 700-n: Conductor Layer 800-1, 800-2,..., 800-n: contact pin

Claims (9)

  1. 　複数のコンタクトピンの一端同士を樹脂基板に埋め込んで、前記樹脂基板の表面に前記複数のコンタクトピンが樹立した状態で形成されるコネクタの製造方法であって、
    　第１の深さｄ１で刻印されたコンタクトピンパターンを有する転写金型と、
    　前記樹脂基板とを準備するステップと、
    　前記転写金型を前記樹脂基板に押圧し、前記樹脂基板の表面に第２の深さｄ２（ｄ２＜ｄ１）で刻印された反転コンタクトピンパターンを作製するステップと、
    　前記転写金型を保持した状態で前記転写金型と前記樹脂基板との間隙に樹脂を注入し硬化させるステップと、
    　前記転写金型を除去し、前記反転コンタクトピンパターンが刻印された樹脂金型を作製するステップと、
    　前記樹脂金型の表面に金属シード膜を形成するステップと、
    　前記反転コンタクトピンパターンが形成されていない領域の前記金属シード膜を除去するステップと、
    　前記金属シード膜を下地として電気めっきにより前記反転コンタクトピンパターンが刻印されている領域を埋める導体層を形成するステップと、
    　硬化した前記樹脂を溶解させ、前記複数のコンタクトピンを前記樹脂基板上に所定の高さｄ３（ｄ３＝ｄ１－ｄ２）で樹立させるステップと、を有することを特徴とする方法。     A method of manufacturing a connector, wherein one end of a plurality of contact pins is embedded in a resin substrate, and the plurality of contact pins are formed on the surface of the resin substrate,
    A transfer mold having a contact pin pattern imprinted with a first depth d1,
    Preparing the resin substrate;
    Pressing the transfer mold against the resin substrate to produce an inverted contact pin pattern inscribed on the surface of the resin substrate at a second depth d2 (d2 <d1);
    Injecting and curing a resin in the gap between the transfer mold and the resin substrate while holding the transfer mold;
    Removing the transfer mold and producing a resin mold imprinted with the inverted contact pin pattern;
    Forming a metal seed film on the surface of the resin mold;
    Removing the metal seed film in a region where the inverted contact pin pattern is not formed;
    Forming a conductor layer that fills a region where the inversion contact pin pattern is engraved by electroplating with the metal seed film as a base; and
    Dissolving the cured resin, and establishing the plurality of contact pins on the resin substrate at a predetermined height d3 (d3 = d1-d2).
  2. 　複数のコンタクトピンの一端同士を樹脂基板に埋め込んで前記樹脂基板の表面に前記複数のコンタクトピンが樹立した状態で形成されるコネクタの製造方法であって、
    　第１の深さｄ１で刻印されたコンタクトピンパターンを有する転写金型と、
    　所定の厚さｄ３（ｄ３＜ｄ１）で樹脂が表面に塗布された前記樹脂基板とを準備するステップと、
    　前記転写金型を前記樹脂基板の前記表面に押圧して前記樹脂基板に第２の深さｄ２（ｄ２＝ｄ１－ｄ３）で刻印された反転コンタクトピンパターンを作製するステップと、
    　前記転写金型を除去し、前記反転コンタクトピンパターンが刻印された樹脂金型を作製するステップと、
    　前記樹脂金型の表面に金属シード膜を形成するステップと、
    　前記反転コンタクトピンパターンが形成されていない領域の前記金属シード膜を除去するステップと、
    　前記金属シード膜を下地として電気めっきにより前記反転コンタクトピンパターンが刻印されている領域を埋める導体層を形成するステップと、
    　塗布された前記樹脂を溶解させ、前記複数のコンタクトピンを前記樹脂基板上に所定の高さｄ３で樹立させるステップと、を有することを特徴とする方法。     A manufacturing method of a connector formed by embedding one end of a plurality of contact pins in a resin substrate and forming the plurality of contact pins on the surface of the resin substrate,
    A transfer mold having a contact pin pattern imprinted with a first depth d1,
    Preparing the resin substrate having a resin coated on the surface with a predetermined thickness d3 (d3 <d1);
    Pressing the transfer mold against the surface of the resin substrate to produce a reverse contact pin pattern imprinted on the resin substrate with a second depth d2 (d2 = d1-d3);
    Removing the transfer mold and producing a resin mold imprinted with the inverted contact pin pattern;
    Forming a metal seed film on the surface of the resin mold;
    Removing the metal seed film in a region where the inverted contact pin pattern is not formed;
    Forming a conductor layer that fills a region where the inversion contact pin pattern is engraved by electroplating with the metal seed film as a base; and
    Dissolving the applied resin, and establishing the plurality of contact pins on the resin substrate at a predetermined height d3.
  3. 　複数のコンタクトピンの一端同士を樹脂基板に埋め込んで、前記樹脂基板の表面に前記複数のコンタクトピンが樹立した状態で形成されるコネクタの製造方法であって、
    　第１の深さｄ１で刻印されたコンタクトピンパターンを有する転写金型と、
    　所定の厚さｄ３（ｄ３＜ｄ１）で樹脂が表面に塗布され、金属基板が裏面に貼付された所定の厚さｄ２（ｄ２＝ｄ１－ｄ３）の前記樹脂基板とを準備するステップと、
    　前記転写金型を前記樹脂基板の前記表面に押圧して前記金属基板に達する第１の深さｄ１で刻印された反転コンタクトピンパターンを作製するステップと、
    　前記転写金型を除去し、前記反転コンタクトピンパターンが刻印された樹脂金型を作製するステップと、
    　前記金属基板を下地として電気めっきにより前記反転コンタクトピンパターンが刻印されている領域を埋める導体層を形成するステップと、
    　前記樹脂を溶解させると共に、前記金属基板を前記樹脂基板の裏面から剥離して、前記複数のコンタクトピンを前記樹脂基板上に所定の高さｄ３で樹立させるステップとを有することを特徴とする方法。     A method of manufacturing a connector, wherein one end of a plurality of contact pins is embedded in a resin substrate, and the plurality of contact pins are formed on the surface of the resin substrate,
    A transfer mold having a contact pin pattern imprinted with a first depth d1,
    Preparing a resin substrate having a predetermined thickness d2 (d2 = d1−d3) in which a resin is applied to the surface with a predetermined thickness d3 (d3 <d1) and a metal substrate is attached to the back surface;
    Pressing the transfer mold against the surface of the resin substrate to produce an inverted contact pin pattern imprinted with a first depth d1 reaching the metal substrate;
    Removing the transfer mold and producing a resin mold imprinted with the inverted contact pin pattern;
    Forming a conductor layer that fills a region where the reverse contact pin pattern is engraved by electroplating with the metal substrate as a base; and
    And dissolving the resin, peeling the metal substrate from the back surface of the resin substrate, and establishing the plurality of contact pins on the resin substrate at a predetermined height d3. .
  4. 　請求項１乃至３のいずれかに記載の方法において、
    　前記樹脂基板が熱硬化性樹脂又は有機溶剤で溶解不能な熱可塑性樹脂によって作製され、
    　前記樹脂が前記有機溶剤によって溶解可能な熱可塑性樹脂であることを特徴とする方法。     The method according to any one of claims 1 to 3,
    The resin substrate is made of a thermosetting resin or a thermoplastic resin that is insoluble in an organic solvent,
    A method wherein the resin is a thermoplastic resin which can be dissolved by the organic solvent.
  5. 　請求項１乃至３のいずれかに記載の方法において、
    　前記転写金型の押圧による前記反転コンタクトピンパターンの作製は、インプリント又は熱プレスによって行われることを特徴とする方法。     The method according to any one of claims 1 to 3,
    The method of producing the reverse contact pin pattern by pressing the transfer mold is performed by imprinting or hot pressing.
  6. 　請求項１乃至３のいずれかに記載の方法において、
    　前記転写金型は、ＳｉまたはＮｉからなることを特徴とする方法。     The method according to any one of claims 1 to 3,
    The method according to claim 1, wherein the transfer mold is made of Si or Ni.
  7. 　請求項１乃至３のいずれかに記載の方法において、
    　前記電気めっきは、銅めっき、リン青銅めっき、又はニッケルコバルト合金めっきであることを特徴とする方法。     The method according to any one of claims 1 to 3,
    The electroplating is copper plating, phosphor bronze plating, or nickel cobalt alloy plating.
  8. 　請求項１又は２に記載の方法において、
    　前記金属シード膜は、Ｃｕ、Ｎｉ、Ｓｎ又はＡｌのいずれかからなることを特徴とする方法。     The method according to claim 1 or 2,
    The method according to claim 1, wherein the metal seed film is made of any one of Cu, Ni, Sn, and Al.
  9. 　請求項３に記載の方法において、
    　前記金属基板が、Ｎｉ、Ｔｉ、ＳＵＳ又はＮｉ合金からなることを特徴とする方法。     The method of claim 3, wherein
    The method wherein the metal substrate is made of Ni, Ti, SUS or Ni alloy.
PCT/JP2014/000255 2014-01-20 2014-01-20 Method for manufacturing connector WO2015107568A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/JP2014/000255 WO2015107568A1 (en) 2014-01-20 2014-01-20 Method for manufacturing connector
JP2014520091A JP5575348B1 (en) 2014-01-20 2014-01-20 Connector manufacturing method
TW103144252A TW201541767A (en) 2014-01-20 2014-12-18 Method for manufacturing connector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2014/000255 WO2015107568A1 (en) 2014-01-20 2014-01-20 Method for manufacturing connector

Publications (1)

Publication Number Publication Date
WO2015107568A1 true WO2015107568A1 (en) 2015-07-23

Family

ID=51579019

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2014/000255 WO2015107568A1 (en) 2014-01-20 2014-01-20 Method for manufacturing connector

Country Status (3)

Country Link
JP (1) JP5575348B1 (en)
TW (1) TW201541767A (en)
WO (1) WO2015107568A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US8829967B2 (en) 2012-06-27 2014-09-09 Triquint Semiconductor, Inc. Body-contacted partially depleted silicon on insulator transistor
US8847672B2 (en) 2013-01-15 2014-09-30 Triquint Semiconductor, Inc. Switching device with resistive divider
US9214932B2 (en) 2013-02-11 2015-12-15 Triquint Semiconductor, Inc. Body-biased switching device
US8977217B1 (en) 2013-02-20 2015-03-10 Triquint Semiconductor, Inc. Switching device with negative bias circuit
US8923782B1 (en) 2013-02-20 2014-12-30 Triquint Semiconductor, Inc. Switching device with diode-biased field-effect transistor (FET)
US9203396B1 (en) 2013-02-22 2015-12-01 Triquint Semiconductor, Inc. Radio frequency switch device with source-follower
US9379698B2 (en) 2014-02-04 2016-06-28 Triquint Semiconductor, Inc. Field effect transistor switching circuit
JP2019114467A (en) * 2017-12-25 2019-07-11 合同会社シナプス Coaxial cable connector and method for manufacturing coaxial cable connector

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004247216A (en) * 2003-02-14 2004-09-02 Sumitomo Electric Ind Ltd Manufacturing method of anisotropic conductive sheet
JP2006269400A (en) * 2005-02-28 2006-10-05 Sumitomo Electric Ind Ltd Anisotropic conductive sheet, its manufacturing method, connection method, and inspection method
JP2007141731A (en) * 2005-11-21 2007-06-07 Sumitomo Electric Ind Ltd Anisotropic conductive sheet, its manufacturing method, connection method, and inspection method
JP2008218285A (en) * 2007-03-06 2008-09-18 Sumitomo Electric Ind Ltd Forming method for anisotropic conductive sheet
WO2011111639A1 (en) * 2010-03-11 2011-09-15 オムロン株式会社 Composition for manufacturing contacts, and contact and connector using same
WO2013072952A1 (en) * 2011-11-15 2013-05-23 株式会社Ｌｅａｐ Transfer mold and production method for transfer mold
WO2013072954A1 (en) * 2011-11-15 2013-05-23 株式会社Ｌｅａｐ Production method for transfer mold, transfer mold produced using same, and component produced using said transfer mold

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004247216A (en) * 2003-02-14 2004-09-02 Sumitomo Electric Ind Ltd Manufacturing method of anisotropic conductive sheet
JP2006269400A (en) * 2005-02-28 2006-10-05 Sumitomo Electric Ind Ltd Anisotropic conductive sheet, its manufacturing method, connection method, and inspection method
JP2007141731A (en) * 2005-11-21 2007-06-07 Sumitomo Electric Ind Ltd Anisotropic conductive sheet, its manufacturing method, connection method, and inspection method
JP2008218285A (en) * 2007-03-06 2008-09-18 Sumitomo Electric Ind Ltd Forming method for anisotropic conductive sheet
WO2011111639A1 (en) * 2010-03-11 2011-09-15 オムロン株式会社 Composition for manufacturing contacts, and contact and connector using same
WO2013072952A1 (en) * 2011-11-15 2013-05-23 株式会社Ｌｅａｐ Transfer mold and production method for transfer mold
WO2013072954A1 (en) * 2011-11-15 2013-05-23 株式会社Ｌｅａｐ Production method for transfer mold, transfer mold produced using same, and component produced using said transfer mold

Also Published As

Publication number Publication date
JP5575348B1 (en) 2014-08-20
JPWO2015107568A1 (en) 2017-03-23
TW201541767A (en) 2015-11-01

Similar Documents

Publication Publication Date Title
JP5575348B1 (en) Connector manufacturing method
CN101578928B (en) Circuit board and method for manufacturing the same
JP5294286B1 (en) Coil element manufacturing method
KR20150079935A (en) Method for producing ciol element using resin substrate and using electroforming
US20150302987A1 (en) Production method for coil element, coil element assembly, and coil component
JP5514375B1 (en) Coil component and method for manufacturing coil component
JP5096223B2 (en) Method for manufacturing printed circuit board
TW201114348A (en) Printed circuit board and manufacturing method thereof
JP5481002B1 (en) Connector manufacturing method
JP2009266957A (en) Wiring board, and method for manufacturing thereof
US10910300B1 (en) Method for manufacturing interposer
JP6340217B2 (en) Plated resin molded product and manufacturing method
JP4720767B2 (en) Flexible substrate and manufacturing method thereof
JPH02139216A (en) Molding method of three-dimensional molding circuit
CN104409365A (en) Manufacturing method of BGA substrate
US20210176866A1 (en) Printed wiring board and method for manufacturing printed wiring board
JP5073868B1 (en) Method of manufacturing transfer mold and transfer mold
JP2005026412A (en) Mold for coining manufacture of circuit board and its manufacturing method
JP2013045828A (en) Circuit board manufacturing method
JP2020027723A (en) Manufacturing method of electrical connector
CN114141632A (en) Lead frame preparation method, lead frame preparation die and lead frame
JP2005032779A (en) Method for manufacturing package
KR20160002279U (en) Connector mold
KR20160011064A (en) Injetion moulding method of connector mold
JP2006024724A (en) Three-dimensional wiring structure, manufacturing method thereof and three-dimensional mounting component

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2014520091

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14878629

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14878629

Country of ref document: EP

Kind code of ref document: A1