WO2015105149A1 - Mounting method for semiconductor device and mounting device - Google Patents

Mounting method for semiconductor device and mounting device Download PDF

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Publication number
WO2015105149A1
WO2015105149A1 PCT/JP2015/050380 JP2015050380W WO2015105149A1 WO 2015105149 A1 WO2015105149 A1 WO 2015105149A1 JP 2015050380 W JP2015050380 W JP 2015050380W WO 2015105149 A1 WO2015105149 A1 WO 2015105149A1
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WO
WIPO (PCT)
Prior art keywords
substrate
thermosetting resin
mounting
semiconductor device
plate
Prior art date
Application number
PCT/JP2015/050380
Other languages
French (fr)
Japanese (ja)
Inventor
昇 朝日
芳範 宮本
敏史 竹上
Original Assignee
東レ株式会社
東レエンジニアリング株式会社
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Filing date
Publication date
Application filed by 東レ株式会社, 東レエンジニアリング株式会社 filed Critical 東レ株式会社
Priority to KR1020167018167A priority Critical patent/KR20160105415A/en
Priority to JP2015556832A priority patent/JP6461822B2/en
Publication of WO2015105149A1 publication Critical patent/WO2015105149A1/en

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Definitions

  • the present invention is a semiconductor in which a semiconductor device such as an IC or LSI is bonded to a circuit board such as a flexible board, a glass epoxy board, a glass board, a ceramic board, a silicon interposer, or a silicon board and directly mounted in an electrically bonded or laminated state.
  • the present invention relates to a device mounting method and a mounting device.
  • a method has been proposed in which a semiconductor chip or a substrate with a bump on which an adhesive has been formed in advance is flip-chip connected to perform electrical bonding and resin sealing at the same time.
  • a substrate on which a semiconductor device is temporarily mounted via an insulating adhesive is placed on a substrate holding plate that is spring-biased upward from the lower die and separated from the lower die, and the upper die with a built-in heater is used as the substrate. Proximity to face. In this state, the substrate is preheated by radiant heat from the upper die, and then the upper die is lowered to fix the semiconductor device to the substrate while pressing and heating (see Patent Document 1).
  • the semiconductor device when the semiconductor device is pushed into the insulating adhesive on the substrate held away from the lower mold, heat from the upper mold is transferred first, so the substrate reaches the lower mold depending on the type of insulating adhesive. Then, the insulating adhesive is cured before pressing is started in a supported state. As a result, the insulating adhesive is hardened before the bumps reach the electrodes on the substrate, causing a problem that electrical connection cannot be ensured.
  • the present invention has been made in view of such circumstances, and a main object thereof is to provide a semiconductor device mounting method and a mounting apparatus capable of mounting a semiconductor device on a substrate with high accuracy in a short time.
  • This invention has the following configuration in order to achieve such an object.
  • thermosetting resin a mounting method for mounting a semiconductor device having bumps on a substrate via a thermosetting resin
  • the semiconductor device With the heat conduction delay plate interposed between the holding stage and the semiconductor device, the semiconductor device is added by the pressing member while the holding stage is heated by the first heater above the curing temperature of the thermosetting resin.
  • the bumps are connected to the electrodes of the substrate, the thermosetting resin is cured, and the pressure bonding is performed to the substrate.
  • the heat conducted from the holding stage to the substrate can be delayed by interposing the plate between the holding stage and the substrate. Therefore, after the plate and the substrate are placed and held on the holding stage, the thermosetting resin can be suppressed from being cured until the semiconductor device is pressurized by the pressing member. As a result, after securely connecting the bumps of the semiconductor device and the electrodes of the substrate, the thermosetting resin can be cured and finally bonded (fixed) to the substrate.
  • the holding stage is equal to or higher than the curing temperature of the thermosetting resin
  • the temperature transmitted to the substrate is adjusted to the curing temperature of the physical properties and the delay time is adjusted in consideration of heat conduction by the plate. Can do.
  • the plate may be interposed between the holding table and the substrate as follows.
  • the substrate on which the semiconductor device is temporarily press-bonded with the uncured thermosetting resin is transferred onto the plate.
  • a substrate on which a semiconductor device is temporarily press-bonded with the uncured thermosetting resin and a plate for heat conduction delay may be overlapped and conveyed to a holding stage.
  • the superposition of the substrate and the heat conduction delay plate may be merely superposition, for example.
  • the substrate and the heat conduction delay plate may be bonded in advance with a double-sided adhesive tape or an adhesive.
  • solder when solder is provided as a bump, it is preferable to set the temperature so that the solder of the bump is melt bonded to the electrode of the substrate before the thermosetting resin is cured.
  • the electrode of the substrate and the bump can be reliably electrically connected.
  • the plate is cooled after the substrate after the main-bonding process is carried out from the holding stage until the new substrate to be processed is placed on the plate.
  • thermosetting resin When reusing a plate, when a new substrate to be processed is placed on the plate, it is possible to prevent the thermosetting resin from being cured by the residual heat accumulated in the plate during the previous processing.
  • the present invention has the following configuration in order to achieve such an object.
  • a mounting device for mounting a semiconductor device having bumps on a substrate via a thermosetting resin, Holding stage;
  • a first heater for heating the holding stage;
  • a transport mechanism for transporting a substrate on which a semiconductor device is temporarily pressure-bonded by the uncured thermosetting resin onto the plate after transporting the heat conduction delay plate to the holding stage;
  • a pressure-bonding mechanism that presses the semiconductor device on the substrate placed and held in the order of the plate and the substrate on the holding stage with a pressing member;
  • a control unit for controlling the temperature of the holding stage to be equal to or higher than the curing temperature of the thermosetting resin by the first heater; It is provided with.
  • the plate is placed and held on the holding stage in a heated state by the transport mechanism, and the substrate is placed and held on the plate.
  • heat transfer from the holding stage to the substrate is delayed by the plate. That is, the said structure can implement the said method suitably.
  • a mounting device for mounting a semiconductor device having a bump on a substrate via a thermosetting resin, Holding stage; A first heater for heating the holding stage; A transport mechanism for transporting a heat conduction delay plate superimposed on a substrate on which a semiconductor device is temporarily press-bonded with the uncured thermosetting resin; A pressure-bonding mechanism that presses the semiconductor device of the substrate placed and held on the holding stage with a pressing member; A control unit for controlling the temperature of the holding stage to be equal to or higher than the curing temperature of the thermosetting resin by the first heater; It is provided with.
  • the said structure can implement the said method suitably.
  • the substrate and the plate can be transported integrally, when the substrate is a semiconductor wafer, the thinned semiconductor wafer can be reinforced. Therefore, it is possible to suppress the substrate from being bent during the conveyance process and the semiconductor device on the substrate from being damaged. Further, the processing time can be shortened as compared with the case where the plate and the substrate are individually conveyed.
  • the pressing member includes a second heater
  • the controller preferably controls the temperature of the pressing member to be equal to or higher than the curing temperature of the thermosetting resin by the second heater.
  • the substrate can be pressurized and heated while being sandwiched between the holding stage and the pressing member via the plate. Therefore, the delay time of the heat transfer to the thermosetting resin on the substrate can be adjusted in a short time.
  • the residual heat accumulated in the plate can be removed. Accordingly, it is possible to avoid curing of the thermosetting resin due to residual heat before pressurizing the semiconductor device to the substrate.
  • thermosetting resin it is possible to suppress the thermosetting resin from being cured until the semiconductor device on the substrate placed and held on the heated holding stage is pressurized. it can. That is, the thermosetting resin can be cured at high speed and securely fixed to the substrate in a state where the electrical connection between the substrate and the bump is securely connected.
  • thermosetting resin is preferably NCF (non-conductive adhesive film).
  • the “semiconductor device” in the present invention includes bumps such as an IC chip, a semiconductor chip, an optical element, a surface mount component, a chip, a wafer, TCP (Tape Carrier Package), FPC (Flexible Printed Circuit), etc. is there. Further, these semiconductor devices show all forms on the side to be bonded to the substrate regardless of the type and size. For example, COG (Chip On Glass), which is chip bonding to a flat display panel, TCP, OLB (Outer Lead On Bonding), which is FPC bonding, and the like are used.
  • substrate for example, a flexible substrate, a glass epoxy substrate, a glass substrate, a ceramic substrate, a silicon interposer, a silicon substrate, or the like is used.
  • FIG. 1 is a perspective view showing a schematic configuration of a main crimping device constituting a mounting device according to the present invention
  • FIG. 2 is a plan view showing a main configuration of the mounting device
  • FIG. 3 shows a main configuration of the mounting device.
  • the mounting apparatus includes a transport mechanism 1 and a main crimping apparatus 2.
  • a transport mechanism 1 As shown in FIGS. 1 and 2, the mounting apparatus according to the present invention includes a transport mechanism 1 and a main crimping apparatus 2.
  • a main crimping apparatus 2 As shown in FIGS. 1 and 2, the mounting apparatus according to the present invention includes a transport mechanism 1 and a main crimping apparatus 2.
  • the transport mechanism 1 includes a movable table 3 and a transport arm 4.
  • the movable table 3 is configured to move in the horizontal axis direction along the guide rail 5.
  • the transfer arm 4 is connected at its base end side to the lifting / lowering drive mechanism of the movable table 3 and is configured to be movable in the vertical (Z) direction and the Z axis ( ⁇ ) direction.
  • the transfer arm 4 includes a holding frame 6 at the tip. As shown in FIGS. 2 and 3, the holding frame 6 has a horseshoe shape, and includes a plurality of locking claws 7 for locking the plate for heat conduction delay and the substrate W at the corners.
  • the main crimping device 2 includes a movable table 8 and a pressing mechanism 9.
  • the movable table 8 includes a holding stage 10 that holds the substrate W by suction.
  • the holding stage 10 is configured to be movable in two horizontal axes (X, Y), up and down (Z), and around the Z axis ( ⁇ ).
  • the outer shape of the holding stage 10 is set to a size that fits inside the holding frame 6.
  • the holding stage 10 has a heater 11 embedded therein.
  • the heater 11 corresponds to the first heater of the present invention.
  • the pressing mechanism 9 includes a cylinder 13 and a pressure bonding head 14. That is, the cylinder 13 is connected to the upper side of the crimping head 14 so that the crimping head 1314 moves up and down.
  • the pressure bonding head 14 has a downward convex shape and extends in the alignment direction of the plurality of semiconductor devices C aligned on the edge side of the substrate W. In other words, the plurality of semiconductor devices C are simultaneously pressurized by the tips of the convex portions.
  • a heater 15 is embedded in the crimping head 14.
  • the crimping head 14 corresponds to a pressing member of the present invention, and the heater 15 corresponds to a second heater.
  • the controller 20 adjusts the temperature of the heaters 11 and 15 so that the temperature of the heater 15 of the crimping head 14 and the heater 11 of the holding stage 10 is maintained at a temperature equal to or higher than the temperature at which the thermosetting resin G is cured. I have control.
  • thermosetting resin is completely cured with respect to the one in which a plurality of semiconductor devices C are transported in a pre-press-bonded state to the substrate W by NCF in the temporary press-bonding step of the previous step.
  • the case of crimping will be described as an example.
  • the temperature of both heaters 11 and 15 provided in the holding stage 10 and the pressure bonding head 14 is set by operating the operation unit 21.
  • the temperatures of both heaters 11 and 15 are set such that the temperature at the interface between the plate P and the substrate W for delaying heat conduction and the interface between the pressure bonding head 14 and the semiconductor device C are higher than the curing temperature of the thermosetting resin G.
  • the curing temperature is set (step S1).
  • the plate P is set so that, for example, the relationship between the heat transfer coefficient (W / m ⁇ K) L and the plate thickness (mm) T, that is, L / T is 1 or more and 20 or less.
  • the plate P is not limited to stainless steel, and may be any material that is not deformed by the pressing of the pressure-bonding head 14, and may be a metal, ceramic, carbon, a porous material, or the like.
  • step S2 When the initial setting is completed, the device is operated (step S2). On the main crimping apparatus side, the control unit 20 turns on the heaters 11 and 15 and starts temperature control so as to keep the preset temperature constant.
  • the plate P is placed on the holding frame 6 of the transport mechanism 1 by the transport robot (not shown) arranged on the temporary press-bonding process side, and then the substrate W is placed on the plate P. (Step S3).
  • the plate P and the substrate W are conveyed to the main crimping apparatus 2.
  • the substrate W is transferred to the holding stage 10 as indicated by the two-dot chain line in FIG.
  • a plurality of through holes are formed in the plate P and are sucked and held by the holding stage 10 through the through holes (step S4).
  • the holding stage 10 is moved to a predetermined mounting position below the pressure-bonding head 14 which is the front (Y direction in FIG. 1) by a driving mechanism (not shown).
  • the heating is started by the heater 11 from the time when the plate P and the substrate W are attracted and held on the holding stage 10 (step S5).
  • the crimping head 14 When the holding stage 10 reaches the mounting position, as shown in FIG. 6, the crimping head 14 is lowered by the operation of the cylinder 13, and a plurality of semiconductor devices C are sandwiched simultaneously. At this time, the semiconductor device C is pressed while being heated by the heated crimping head 14 (step S6).
  • thermosetting resin G when the pressure bonding head 14 is lowered to a predetermined height, the thermosetting resin G is in an uncured state, so that the bump B of the semiconductor device C is heated by the pressure of the pressure bonding head 14 as shown in FIG. It is pushed into the curable resin G. That is, after the bump B of the semiconductor device C reaches the electrode of the substrate W, the thermosetting resin is cured.
  • step S7 When the semiconductor device C is pressurized and heated until a predetermined time until the thermosetting resin G is completely cured (step S7), the pressure bonding head 14 is returned to the upper standby position to release the pressure, and the transport mechanism 1 The plate P and the substrate W are carried out (step S8).
  • the plate P and the substrate W are transported to a predetermined position, they are transferred to another transport robot or stored in a stocker.
  • the heat conduction delay plate P is placed on the holding stage maintained at a temperature equal to or higher than the curing temperature of the thermosetting resin G, and the temporarily bonded substrate W of the semiconductor device C is sucked and held. Therefore, the thermosetting resin G is not cured until the pressure-bonding head 14 is lowered and fully pressurized. That is, in this embodiment, as shown by the solid line in FIG. 8, pressurization is started by bringing the pressure-bonding head 14 into contact with the semiconductor device C from time T1 when the plate P and the substrate W are placed and held on the holding stage 10.
  • the temperature gradient up to the time point T2 (for example, set at the time of the solder melting temperature in this embodiment) is smaller than the temperature gradient of the conventional method indicated by the one-dot chain line without the plate P interposed therebetween, and the thermosetting resin G It is possible to keep the temperature lower than the curing temperature.
  • the pressure bonding head 14 since the temperature gap until the press of the semiconductor device C by the pressure bonding head 14 is larger than that in the conventional method, the pressure bonding head 14 is lowered to a predetermined height and the bump B of the semiconductor device C is used as the electrode of the substrate W.
  • the thermosetting resin G can be kept in an uncured state. As a result, the electrical connection between the electrode of the substrate W and the bump B can be ensured.
  • the curing temperature of the thermosetting resin G can be measured by DSC (differential scanning calorimetry).
  • the present invention is not limited to the embodiment described above, and can be modified as follows.
  • the pressure-bonding head 14 of the above-described embodiment apparatus can be used for a single type for main-bonding one semiconductor device C or a multi-type having a plurality of the single types as shown in FIG. it can.
  • the temperatures of the heaters 11 and 15 provided in the holding stage 10 and the pressure-bonding head 14 are set to be the same, but the temperature may be set as follows, for example.
  • the time during which heat is transmitted to the thermosetting resin G through the semiconductor device C from the start of pressurization of the semiconductor device C by the crimping head 14 and the heat to the thermosetting resin G through the substrate W and the plate P may be appropriately changed so that the time for transmission is the same.
  • the temperature transmission time may be adjusted not only by the temperature setting of the heaters 11 and 15 but also by the thickness of the plate P. According to this method, it is possible to suppress warpage of the substrate W that may be caused by a difference in heat transfer between the substrate W and the semiconductor device C.
  • the bump B of the semiconductor device has a configuration in which the solder ball or the copper electrode pillar is soldered
  • the bump pressed into the thermosetting resin G by the press contacts the electrode of the substrate W, What is necessary is just to control temperature so that the thermosetting resin G will be in an unhardened state for the time from a contact state to a solder melt-bonding.
  • the holding stage 10 is configured to be movable by the movable table 8, but may be a fixed configuration. In this case, it is only necessary that the alignment is maintained when the plate P and the substrate W are transported by the holding frame 6. Further, the plate P may be fixed or integrally formed with the holding frame 6. Therefore, in the present invention, it is sufficient that the plate P and the substrate W are stacked and held on the holding stage 6 in this order. It may be placed on the holding stage 10 first.
  • one substrate W is used, but a substrate W before break in which a plurality of substrates W are connected may be used.
  • the plurality of substrates W may be placed on a plate having a size corresponding to the substrate W before the break, and the main bonding may be performed while shifting the substrate below the pressure bonding head.
  • the plate P and the substrate W are placed on the holding stage 10 at the same time, but they may be transported and placed individually. In this case, the substrate W is placed after the plate P is placed on the holding stage 10.
  • the plate P when the plate P is reused, the plate P may be cooled by a cooler after the main pressure bonding process and before the new substrate W is placed on the plate P. What is necessary is just to comprise a cooler, for example so that air may be sprayed with a nozzle.
  • the plate P may be attached in advance to the substrate W with an adhesive as shown in FIGS.
  • the size of the plate P may be the same shape as the substrate W and the same size or larger than the substrate.
  • a plate what was shape
  • the substrate W with reduced rigidity can be reinforced. That is, when the substrate W is transported, the semiconductor device C can be prevented from being bent due to the substrate W being bent.
  • the number of conveyances to the holding stage 10 can be reduced compared to the processing of the above embodiment. That is, in step S3 shown in FIG. 4, the plate-equipped substrate W only needs to be transported and placed on the holding stage 10 only once. Further, in step S8, the substrate W with the plate may be carried out only once from the holding stage 10 after the main pressure bonding. Therefore, this embodiment can improve the processing speed.
  • substrate W with a plate may convey the said board
  • the substrate W and the plate P may be transported in a state where they are simply overlapped.
  • the substrate W and the plate P carried out from the holding stage 10 may be cooled.
  • air may be blown to the holding plate P during the conveyance process or at a predetermined position.
  • the present invention is suitable for curing a thermosetting resin while electrically connecting a semiconductor device and an electrode of a substrate with high accuracy.

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Abstract

Provided is a mounting method for a semiconductor device in which a retaining stage is heated to a temperature that is equal to or greater than the curing temperature of a thermosetting resin using a heater. A substrate having a semiconductor device temporarily pressure bonded thereto by the thermosetting resin via a heat conduction delay plate is placed and held on the retaining stage. The heated semiconductor device is subsequently pressed by a pressure bonding head while bringing a bump into contact with an electrode on the substrate and curing the thermosetting resin so that the semiconductor device is fully pressure bonded to the substrate.

Description

半導体装置の実装方法および実装装置Semiconductor device mounting method and mounting apparatus
　本発明は、フレキシブル基板、ガラスエポキシ基板、ガラス基板、セラミックス基板、シリコンインターポーザー、シリコン基板などの回路基板にＩＣ、ＬＳＩなど半導体装置を接着、直接に電気的接合または積層状態のまま実装する半導体装置の実装方法および実装装置に関する。 The present invention is a semiconductor in which a semiconductor device such as an IC or LSI is bonded to a circuit board such as a flexible board, a glass epoxy board, a glass board, a ceramic board, a silicon interposer, or a silicon board and directly mounted in an electrically bonded or laminated state. The present invention relates to a device mounting method and a mounting device.
　半導体装置の小型化と高密度化に伴い、半導体チップを回路基板に実装する方法としてフリップチップ実装、さらにはチップを貫通する貫通電極によって３次元的に積層する３次元積層実装が急速に広まってきている。半導体チップの接合部分の接続信頼性を確保するための方法としては、半導体チップ上に形成されたバンプと回路基板の電極パッドを接合した後に、半導体チップと回路基板との隙間に液状封止接着剤を注入し硬化させることが一般的な方法として採られている。 As semiconductor devices are miniaturized and increased in density, flip chip mounting as a method for mounting a semiconductor chip on a circuit board, and further three-dimensional stack mounting in which three-dimensional stacking is performed by through electrodes penetrating the chip are rapidly spreading. ing. As a method for ensuring the connection reliability of the joining portion of the semiconductor chip, after bonding the bump formed on the semiconductor chip and the electrode pad of the circuit board, the liquid sealing adhesion is performed in the gap between the semiconductor chip and the circuit board. It is a common method to inject and cure the agent.
　また、近年、予め接着剤を形成したバンプ付き半導体チップや基板をフリップチップ接続し、電気的接合と樹脂封止を同時に行う方法が提案されている。例えば、下型から上向きにバネ付勢されて当該下型から離間された基板保持プレートに絶縁接着剤を介して半導体装置の仮実装された基板を載置し、ヒータ内蔵の上型を当該基板に近接対向させる。この状態で上型からの輻射熱によって基板を予備加熱した後に、当該上型を下降させて半導体装置を押圧および加熱しながら基板に固着させている（特許文献１を参照）。 In recent years, a method has been proposed in which a semiconductor chip or a substrate with a bump on which an adhesive has been formed in advance is flip-chip connected to perform electrical bonding and resin sealing at the same time. For example, a substrate on which a semiconductor device is temporarily mounted via an insulating adhesive is placed on a substrate holding plate that is spring-biased upward from the lower die and separated from the lower die, and the upper die with a built-in heater is used as the substrate. Proximity to face. In this state, the substrate is preheated by radiant heat from the upper die, and then the upper die is lowered to fix the semiconductor device to the substrate while pressing and heating (see Patent Document 1).
特開２０１１－１５９８４７号公報JP 2011-159847 A
　しかしながら、下型から離間された状態で保持された基板上の絶縁接着剤に半導体装置を押し込む場合、上型からの熱が先に伝わるので、絶縁接着剤の種類によっては基板が下型に到達して支持された状態で加圧が開始される前に、当該絶縁接着剤が硬化する。その結果、バンプが基板の電極に達する前に絶縁接着剤が硬化し、電気的接続が確保されないといった問題が発生している。 However, when the semiconductor device is pushed into the insulating adhesive on the substrate held away from the lower mold, heat from the upper mold is transferred first, so the substrate reaches the lower mold depending on the type of insulating adhesive. Then, the insulating adhesive is cured before pressing is started in a supported state. As a result, the insulating adhesive is hardened before the bumps reach the electrodes on the substrate, causing a problem that electrical connection cannot be ensured.
　また、上型を下降させる速度を速くした場合には、半導体装置が割れたり、或いは、絶縁接着剤が基板からはみ出たりするといった問題が生じている。さらに、基板の電極との接続用に半田を有する半導体装置を実装する場合、下型による加熱のタイミングが遅くなり、半田を十分に溶融させることが困難になっている。この問題を解決するために、加熱温度を上げると実装時間内のピーク温度が設置温度よりも上昇し、基板の反りや装置の使用部材の耐久性を劣化させるといった問題も生じている。 Also, when the speed of lowering the upper mold is increased, there is a problem that the semiconductor device breaks or the insulating adhesive protrudes from the substrate. Furthermore, when mounting a semiconductor device having solder for connection to the electrodes on the substrate, the timing of heating by the lower mold is delayed, making it difficult to sufficiently melt the solder. In order to solve this problem, when the heating temperature is raised, the peak temperature within the mounting time rises higher than the installation temperature, causing problems such as warpage of the substrate and deterioration of durability of the members used in the apparatus.
　本発明はこのような事情に鑑みてなされたものであって、基板に半導体装置を短時間で精度よく実装可能な半導体装置の実装方法および実装装置を提供することを主たる目的としている。 The present invention has been made in view of such circumstances, and a main object thereof is to provide a semiconductor device mounting method and a mounting apparatus capable of mounting a semiconductor device on a substrate with high accuracy in a short time.
　この発明は、このような目的を達成するために、次のような構成をとる。 This invention has the following configuration in order to achieve such an object.
　すなわち、熱硬化性樹脂を介してバンプを有する半導体装置を基板に実装する実装方法であって、
　保持ステージと前記半導体装置の間に熱伝導遅延用のプレートを介在させた状態で第１加熱器によって前記保持ステージを熱硬化性樹脂の硬化温度以上で加熱しながら押圧部材によって当該半導体装置を加圧し、バンプを基板の電極と接続するとともに熱硬化性樹脂を硬化させて基板に本圧着することを特徴とする。 That is, a mounting method for mounting a semiconductor device having bumps on a substrate via a thermosetting resin,
With the heat conduction delay plate interposed between the holding stage and the semiconductor device, the semiconductor device is added by the pressing member while the holding stage is heated by the first heater above the curing temperature of the thermosetting resin. The bumps are connected to the electrodes of the substrate, the thermosetting resin is cured, and the pressure bonding is performed to the substrate.
　この方法によれば、保持ステージと基板との間にプレートを介在させることにより、保持ステージから基板に伝導される熱を遅延させることがきる。したがって、保持ステージにプレートおよび基板を載置保持した後に、押圧部材によって半導体装置を加圧するまで、熱硬化性樹脂が硬化するのを抑制することができる。その結果、半導体装置のバンプと基板の電極を確実に接続した後に、熱硬化性樹脂を硬化させて基板に本圧着（固着）させることができる。 According to this method, the heat conducted from the holding stage to the substrate can be delayed by interposing the plate between the holding stage and the substrate. Therefore, after the plate and the substrate are placed and held on the holding stage, the thermosetting resin can be suppressed from being cured until the semiconductor device is pressurized by the pressing member. As a result, after securely connecting the bumps of the semiconductor device and the electrodes of the substrate, the thermosetting resin can be cured and finally bonded (fixed) to the substrate.
　また、保持ステージを熱硬化性樹脂の硬化温度以上にすることにより、プレートによる熱伝導を考慮して、基板に伝達される温度を物性の硬化温度に合わせたり、遅延時間を調整したりすることができる。 In addition, by setting the holding stage to be equal to or higher than the curing temperature of the thermosetting resin, the temperature transmitted to the substrate is adjusted to the curing temperature of the physical properties and the delay time is adjusted in consideration of heat conduction by the plate. Can do.
　なお、上記方法において、プレートは、次のようにして保持テーブルと基板の間に介在させてもよい。 In the above method, the plate may be interposed between the holding table and the substrate as follows.
　例えば、第１加熱器によって加熱された保持ステージ上に熱伝導遅延用のプレートを搬送した後に、未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板をプレート上に搬送する。 For example, after the plate for delaying heat conduction is transferred onto the holding stage heated by the first heater, the substrate on which the semiconductor device is temporarily press-bonded with the uncured thermosetting resin is transferred onto the plate.
　他の実施形態として、未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板と熱伝導遅延用のプレートを重ね合わせて保持ステージに搬送して載置してもよい。 As another embodiment, a substrate on which a semiconductor device is temporarily press-bonded with the uncured thermosetting resin and a plate for heat conduction delay may be overlapped and conveyed to a holding stage.
　なお、基板と熱伝導遅延用プレートの重ね合わせは、例えば、単に重ね合わせるだけでもよい。或いは、基板と熱伝導遅延用プレートを両面粘着テープまたは接着剤などのよって予め貼り合わせた状態であってもよい。 It should be noted that the superposition of the substrate and the heat conduction delay plate may be merely superposition, for example. Alternatively, the substrate and the heat conduction delay plate may be bonded in advance with a double-sided adhesive tape or an adhesive.
　この方法において、第２加熱器を備えた押圧部材によって半導体装置を加圧および加熱することが好ましい。 In this method, it is preferable to pressurize and heat the semiconductor device by a pressing member provided with a second heater.
　上記方法において、バンプとして、半田が設けられている場合には、
　本圧着過程は、熱硬化性樹脂が硬化するまでにバンプの半田を基板の電極に溶融接着させるよう温度設定することが好ましい。 In the above method, when solder is provided as a bump,
In this press-bonding process, it is preferable to set the temperature so that the solder of the bump is melt bonded to the electrode of the substrate before the thermosetting resin is cured.
　この方法によれば、基板の電極とバンプを確実に電気的に接続させることができる。 According to this method, the electrode of the substrate and the bump can be reliably electrically connected.
　また、上記方法において、本圧着処理後の基板を保持ステージから搬出した後から新しい処理対象の基板をプレートに載置するまでに、プレートを冷却することが好ましい。 Further, in the above method, it is preferable that the plate is cooled after the substrate after the main-bonding process is carried out from the holding stage until the new substrate to be processed is placed on the plate.
　プレートを再利用する場合、新たな処理対象の基板を当該プレートに載置したとき、前回処理時にプレートに蓄積された余熱によって熱硬化性樹脂が硬化するのを回避することができる。 When reusing a plate, when a new substrate to be processed is placed on the plate, it is possible to prevent the thermosetting resin from being cured by the residual heat accumulated in the plate during the previous processing.
　また、この発明は、このような目的を達成するために、次のような構成をとる。 Also, the present invention has the following configuration in order to achieve such an object.
　すなわち、熱硬化性樹脂を介してバンプを有する半導体装置を基板に実装する実装装置であって、
　保持ステージと、
　前記保持ステージを加熱する第１加熱器と、
　熱伝導遅延用のプレートを前記保持ステージに搬送した後に、未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板を当該プレート上に搬送する搬送機構と、
　前記保持ステージ上にプレートおよび基板の順に載置保持された当該基板上の半導体装置を押圧部材によって押圧する圧着機構と、
　前記第１加熱器によって熱硬化性樹脂の硬化温度以上に保持ステージを温度制御する制御部と、
　を備えたことを特徴とする。 That is, a mounting device for mounting a semiconductor device having bumps on a substrate via a thermosetting resin,
Holding stage;
A first heater for heating the holding stage;
A transport mechanism for transporting a substrate on which a semiconductor device is temporarily pressure-bonded by the uncured thermosetting resin onto the plate after transporting the heat conduction delay plate to the holding stage;
A pressure-bonding mechanism that presses the semiconductor device on the substrate placed and held in the order of the plate and the substrate on the holding stage with a pressing member;
A control unit for controlling the temperature of the holding stage to be equal to or higher than the curing temperature of the thermosetting resin by the first heater;
It is provided with.
　この構成によれば、搬送機構によって加熱状態にある保持ステージ上にプレートが載置保持され、当該プレート上に基板が載置保持される。したがって、保持ステージから基板への熱の伝達は、プレートによって遅延される。すなわち、当該構成は、上記方法を好適に実施することができる。 According to this configuration, the plate is placed and held on the holding stage in a heated state by the transport mechanism, and the substrate is placed and held on the plate. Thus, heat transfer from the holding stage to the substrate is delayed by the plate. That is, the said structure can implement the said method suitably.
　他の実施形態として、熱硬化性樹脂を介してバンプを有する半導体装置を基板に実装する実装装置であって、
　保持ステージと、
　前記保持ステージを加熱する第１加熱器と、
　未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板に熱伝導遅延用のプレートを重ね合わせて搬送する搬送機構と、
　前記保持ステージ上に載置保持された基板の半導体装置を押圧部材によって押圧する圧着機構と、
　前記第１加熱器によって熱硬化性樹脂の硬化温度以上に保持ステージを温度制御する制御部と、
　を備えたことを特徴とする。 As another embodiment, a mounting device for mounting a semiconductor device having a bump on a substrate via a thermosetting resin,
Holding stage;
A first heater for heating the holding stage;
A transport mechanism for transporting a heat conduction delay plate superimposed on a substrate on which a semiconductor device is temporarily press-bonded with the uncured thermosetting resin;
A pressure-bonding mechanism that presses the semiconductor device of the substrate placed and held on the holding stage with a pressing member;
A control unit for controlling the temperature of the holding stage to be equal to or higher than the curing temperature of the thermosetting resin by the first heater;
It is provided with.
　この構成によれば、保持ステージと基板の間にプレートを介在させた状態で保持ステージに保持されるので、保持ステージから基板への熱の伝達は、プレートによって遅延される。すなわち、当該構成は、上記方法を好適に実施することができる。 According to this configuration, since the plate is held between the holding stage and the substrate, the heat transfer from the holding stage to the substrate is delayed by the plate. That is, the said structure can implement the said method suitably.
　また、基板とプレートを一体にして搬送することができるので、基板が半導体ウエハの場合、薄化された当該半導体ウエハを補強することができる。したがって、搬送過程で基板が撓んで当該基板上の半導体装置が破損するのを抑制することができる。また、プレートと基板を個別に搬送するのに比べて処理時間を短縮することができる。 In addition, since the substrate and the plate can be transported integrally, when the substrate is a semiconductor wafer, the thinned semiconductor wafer can be reinforced. Therefore, it is possible to suppress the substrate from being bent during the conveyance process and the semiconductor device on the substrate from being damaged. Further, the processing time can be shortened as compared with the case where the plate and the substrate are individually conveyed.
　上記各構成において、押圧部材は、第２加熱器を備え、
　制御部は、第２加熱器によって熱硬化性樹脂の硬化温度以上に押圧部材を温度制御することが好ましい。 In each of the above configurations, the pressing member includes a second heater,
The controller preferably controls the temperature of the pressing member to be equal to or higher than the curing temperature of the thermosetting resin by the second heater.
　この構成によれば、プレートを介して保持ステージと押圧部材によって基板を挟み込んだ状態で加圧および加熱することができる。したがって、基板上の熱硬化性樹脂への熱の伝達の遅延時間を短時間に調整することができる。 According to this configuration, the substrate can be pressurized and heated while being sandwiched between the holding stage and the pressing member via the plate. Therefore, the delay time of the heat transfer to the thermosetting resin on the substrate can be adjusted in a short time.
　さらに、上記構成において、加熱後のプレートを冷却する冷却器を備えることが好ましい。 Furthermore, in the above configuration, it is preferable to provide a cooler for cooling the heated plate.
　この構成によれば、プレートを再利用する場合、当該プレートに蓄積されている余熱を除去することができる。したがって、基板に半導体装置を加圧する前に、余熱による熱硬化性樹脂の硬化を回避することができる。 According to this configuration, when the plate is reused, the residual heat accumulated in the plate can be removed. Accordingly, it is possible to avoid curing of the thermosetting resin due to residual heat before pressurizing the semiconductor device to the substrate.
　本発明の半導体装置の実装方法および実装装置によれば、加熱された保持ステージ上に載置保持された基板上の半導体装置を加圧するまで、熱硬化性樹脂が硬化するのを抑制することができる。すなわち、基板とバンプとの電気的を確実に接続した状態で熱硬化性樹脂を高速に硬化させて基板に固着させることができる。 According to the mounting method and the mounting apparatus of the semiconductor device of the present invention, it is possible to suppress the thermosetting resin from being cured until the semiconductor device on the substrate placed and held on the heated holding stage is pressurized. it can. That is, the thermosetting resin can be cured at high speed and securely fixed to the substrate in a state where the electrical connection between the substrate and the bump is securely connected.
実装装置を構成する本圧着装置の概略全体構成を示す斜視図である。It is a perspective view which shows the schematic whole structure of this crimping | compression-bonding apparatus which comprises a mounting apparatus. 搬送機構の平面図である。It is a top view of a conveyance mechanism. 搬送機構の正面図である。It is a front view of a conveyance mechanism. 実施例装置の一巡の動作を示すフローチャートである。It is a flowchart which shows operation | movement of a circuit of an Example apparatus. プレートおよび基板の搬送動作を示す正面図である。It is a front view which shows the conveyance operation of a plate and a board | substrate. 基板に半導体装置を本圧着する動作を示す図である。It is a figure which shows the operation | movement which carries out the main pressure bonding of the semiconductor device to a board | substrate. 基板に半導体装置を本圧着する動作を示す図である。It is a figure which shows the operation | movement which carries out the main pressure bonding of the semiconductor device to a board | substrate. 基板に半導体装置を本圧着するときの温度プロファイルを示す図である。It is a figure which shows the temperature profile when a semiconductor device is finally crimped | bonded to a board | substrate. 変形例装置の斜視図である。It is a perspective view of a modification apparatus. 変形例のプレート付き基板の部分断面図である。It is a fragmentary sectional view of a substrate with a plate of a modification. 変形例のプレート付き基板を本圧着する動作を示す図である。It is a figure which shows the operation | movement which carries out this pressure bonding of the board | substrate with a plate of a modification.
　　１　…　搬送機構
　　２　…　本圧着装置
　　３　…　可動台
　　４　…　搬送アーム
　　５　…　ガイドレール
　　６　…　保持フレーム
　　７　…　係止爪
　　８　…　可動テーブル
　　９　…　押圧機構
　１０　…　保持ステージ
　１１　…　ヒータ
　１３　…　シリンダ
　１４　…　圧着ヘッド
　１５　…　ヒータ
　　Ｗ　…　基板
　　Ｃ　…　半導体装置
　　Ｇ　…　熱硬化性樹脂
　　Ｐ　…　熱伝達遅延用のプレート DESCRIPTION OF SYMBOLS 1 ... Conveyance mechanism 2 ... This crimping device 3 ... Movable base 4 ... Conveyance arm 5 ... Guide rail 6 ... Holding frame 7 ... Locking claw 8 ... Movable table 9 ... Pressing mechanism 10 ... Holding stage 11 ... Heater 13 ... Cylinder 14 ... Crimping head 15 ... Heater W ... Substrate C ... Semiconductor device G ... Thermosetting resin P ... Heat transfer delay plate
　以下、図面を参照して本発明の一実施例を説明する。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
　本実施例では、熱硬化性樹脂としてＮＣＰ（Non-Conductive Paste）、ＮＣＦ（Non-Conductive Film）などを使用して、半導体装置を基板に実装する場合を例に採って説明する。また、本発明の実装方法においては、熱硬化性樹脂は、ＮＣＦ（非導電性接着剤フィルム）であることが好ましい。 In this embodiment, an example will be described in which a semiconductor device is mounted on a substrate using NCP (Non-Conductive® Paste), NCF (Non-Conductive® Film), or the like as a thermosetting resin. In the mounting method of the present invention, the thermosetting resin is preferably NCF (non-conductive adhesive film).
　なお、本発明における「半導体装置」としては、例えば、ＩＣチップ、半導体チップ、光素子、表面実装部品、チップ、ウエハ、ＴＣＰ（Tape Carrier Package）、ＦＰＣ（Flexible Printed Circuit）などバンプを有するものである。また、これら半導体装置は、種類や大きさに関係なく、基板と接合させる側の全ての形態を示す。例えばフラット表示パネルへのチップボンディングであるＣＯＧ（Chip On Glass）、ＴＣＰ、およびＦＰＣのボンディングであるＯＬＢ（Outer Lead Bonding）などが使用される。 The “semiconductor device” in the present invention includes bumps such as an IC chip, a semiconductor chip, an optical element, a surface mount component, a chip, a wafer, TCP (Tape Carrier Package), FPC (Flexible Printed Circuit), etc. is there. Further, these semiconductor devices show all forms on the side to be bonded to the substrate regardless of the type and size. For example, COG (Chip On Glass), which is chip bonding to a flat display panel, TCP, OLB (Outer Lead On Bonding), which is FPC bonding, and the like are used.
　また、本発明における「基板」とは、例えば、フレキシブル基板、ガラスエポキシ基板、ガラス基板、セラミックス基板、シリコンインターポーザー、シリコン基板などが使用される。 In addition, as the “substrate” in the present invention, for example, a flexible substrate, a glass epoxy substrate, a glass substrate, a ceramic substrate, a silicon interposer, a silicon substrate, or the like is used.
　先ず、本実施例に使用する装置について図面を参照して具体的に説明する。図１は本発明に係る実装装置を構成する本圧着装置の概略構成を示した斜視図、図２は実装装置の要部構成を示した平面図、図３は実装装置の要部構成を示した正面図である。 First, the apparatus used in the present embodiment will be specifically described with reference to the drawings. FIG. 1 is a perspective view showing a schematic configuration of a main crimping device constituting a mounting device according to the present invention, FIG. 2 is a plan view showing a main configuration of the mounting device, and FIG. 3 shows a main configuration of the mounting device. FIG.
　図１および図２に示すように、本発明における実装装置は、搬送機構１および本圧着装置２から構成されている。以下、各構成について詳述する。 As shown in FIGS. 1 and 2, the mounting apparatus according to the present invention includes a transport mechanism 1 and a main crimping apparatus 2. Hereinafter, each configuration will be described in detail.
　搬送機構１は、可動台３および搬送アーム４を備えている。可動台３は、ガイドレール５に沿って水平軸方向に移動するよう構成されている。 The transport mechanism 1 includes a movable table 3 and a transport arm 4. The movable table 3 is configured to move in the horizontal axis direction along the guide rail 5.
　搬送アーム４は、基端側を可動台３の昇降駆動機構に連結されており、上下（Ｚ）方向、およびＺ軸周り（θ）方向に、それぞれ移動自在に構成されている。また、搬送アーム４は、先端に保持フレーム６を備えている。保持フレーム６は、図２および図３に示すように、馬蹄形をしており、熱伝導遅延用のプレートおよび基板Ｗを係止する複数個の係止爪７を角部に備えている。 The transfer arm 4 is connected at its base end side to the lifting / lowering drive mechanism of the movable table 3 and is configured to be movable in the vertical (Z) direction and the Z axis (θ) direction. The transfer arm 4 includes a holding frame 6 at the tip. As shown in FIGS. 2 and 3, the holding frame 6 has a horseshoe shape, and includes a plurality of locking claws 7 for locking the plate for heat conduction delay and the substrate W at the corners.
　本圧着装置２は、可動テーブル８および押圧機構９などから構成されている。 The main crimping device 2 includes a movable table 8 and a pressing mechanism 9.
　可動テーブル８は、基板Ｗを吸着保持する保持ステージ１０を備えている。保持ステージ１０は、水平２軸（Ｘ，Ｙ）方向、上下（Ｚ）方向、およびＺ軸周り（θ）方向に、それぞれ移動自在に構成されている。なお、保持ステージ１０の外形は、保持フレーム６の内側に収まるサイズに設定されている。また、保持ステージ１０は、内部にヒータ１１が埋設されている。なお、ヒータ１１は、本発明の第１加熱器に相当する。 The movable table 8 includes a holding stage 10 that holds the substrate W by suction. The holding stage 10 is configured to be movable in two horizontal axes (X, Y), up and down (Z), and around the Z axis (θ). The outer shape of the holding stage 10 is set to a size that fits inside the holding frame 6. The holding stage 10 has a heater 11 embedded therein. The heater 11 corresponds to the first heater of the present invention.
　押圧機構９は、シリンダ１３および圧着ヘッド１４などから構成されている。すなわち、圧着ヘッド１４の上方にシリンダ１３が連結されており、圧着ヘッド１３１４が上下に移動するよう構成されている。圧着ヘッド１４は、下向き凸形状であって基板Ｗの端縁側に整列配置された複数個の半導体装置Ｃの整列方向に伸びている。つまり凸部先端によって複数個の半導体装置Ｃを同時に加圧するよう構成されている。また、圧着ヘッド１４にはヒータ１５が埋設されている。なお、圧着ヘッド１４は本発明の押圧部材に相当し、ヒータ１５は第２加熱器に相当する。 The pressing mechanism 9 includes a cylinder 13 and a pressure bonding head 14. That is, the cylinder 13 is connected to the upper side of the crimping head 14 so that the crimping head 1314 moves up and down. The pressure bonding head 14 has a downward convex shape and extends in the alignment direction of the plurality of semiconductor devices C aligned on the edge side of the substrate W. In other words, the plurality of semiconductor devices C are simultaneously pressurized by the tips of the convex portions. A heater 15 is embedded in the crimping head 14. The crimping head 14 corresponds to a pressing member of the present invention, and the heater 15 corresponds to a second heater.
　制御部２０は、圧着ヘット１４のヒータ１５および保持ステージ１０のヒータ１１の温度が、熱硬化性樹脂Ｇを硬化させる温度と同等またはそれ以上の温度を維持するよう各ヒータ１１、１５の温度を制御している。 The controller 20 adjusts the temperature of the heaters 11 and 15 so that the temperature of the heater 15 of the crimping head 14 and the heater 11 of the holding stage 10 is maintained at a temperature equal to or higher than the temperature at which the thermosetting resin G is cured. I have control.
　次に上述の実施例装置を用いて半導体装置Ｃを当該基板Ｗに本圧着する一巡の動作について、図４に示すフローチャートおよび図５から図８を参照しながら説明する。なお、本実施例では、前工程の仮圧着工程でＮＣＦによって複数個の半導体装置Ｃが基板Ｗに予め仮圧着された状態で搬送されたものに対し、熱硬化性樹脂を完全に硬化させ本圧着する場合を例に採って説明する。 Next, a round operation of finally press-bonding the semiconductor device C to the substrate W using the above-described embodiment apparatus will be described with reference to the flowchart shown in FIG. 4 and FIGS. 5 to 8. In the present embodiment, the thermosetting resin is completely cured with respect to the one in which a plurality of semiconductor devices C are transported in a pre-press-bonded state to the substrate W by NCF in the temporary press-bonding step of the previous step. The case of crimping will be described as an example.
　先ず、保持ステージ１０および圧着ヘッド１４に備わった両ヒータ１１、１５の温度を、操作部２１を操作して設定する。ここで、両ヒータ１１、１５の温度は、熱伝導遅延用のプレートＰと基板Ｗの界面および圧着ヘッド１４と半導体装置Ｃの界面の温度が熱硬化性樹脂Ｇの硬化温度よりも高く設定される。すなわち、保持ステージ１０に吸着保持された基板Ｗが、圧着ヘッド１４の下側の実装位置に達した時点で、半導体装置ＣおよびプレートＰを介して熱硬化性樹脂Ｇに伝達される熱が、硬化温度になるように設定される（ステップＳ１）。 First, the temperature of both heaters 11 and 15 provided in the holding stage 10 and the pressure bonding head 14 is set by operating the operation unit 21. Here, the temperatures of both heaters 11 and 15 are set such that the temperature at the interface between the plate P and the substrate W for delaying heat conduction and the interface between the pressure bonding head 14 and the semiconductor device C are higher than the curing temperature of the thermosetting resin G. The That is, when the substrate W sucked and held by the holding stage 10 reaches the mounting position on the lower side of the pressure bonding head 14, the heat transferred to the thermosetting resin G through the semiconductor device C and the plate P is The curing temperature is set (step S1).
　また、本実施例では、プレートＰにステンレス鋼が使用される。ここで、プレートＰは、例えば、熱伝達率（Ｗ／ｍ・Ｋ）Ｌとプレートの厚み（ｍｍ）Ｔと関係、すなわち、Ｌ／Ｔが、１以上かつ２０以下となるように設定される。なお、プレートＰは、ステンレス鋼に限定されず、圧着ヘッド１４の押圧によって変形しない材質であればよく、金属、セラミック、カーボンおよび多孔質材などであってもよい。 In this embodiment, stainless steel is used for the plate P. Here, the plate P is set so that, for example, the relationship between the heat transfer coefficient (W / m · K) L and the plate thickness (mm) T, that is, L / T is 1 or more and 20 or less. . The plate P is not limited to stainless steel, and may be any material that is not deformed by the pressing of the pressure-bonding head 14, and may be a metal, ceramic, carbon, a porous material, or the like.
　初期設定が完了すると装置を作動させる（ステップＳ２）。本圧着装置側では、制御部２０がヒータ１１、１５をオンにして初期設定の温度を一定に保つように温度制御を開始する。 When the initial setting is completed, the device is operated (step S2). On the main crimping apparatus side, the control unit 20 turns on the heaters 11 and 15 and starts temperature control so as to keep the preset temperature constant.
　仮圧着工程側に配備された図示しない搬送ロボットによって、図５に示すように、搬送機構１の保持フレーム６にプレートＰが載置され、その後に当該プレートＰ上に基板Ｗが載置される（ステップＳ３）。 As shown in FIG. 5, the plate P is placed on the holding frame 6 of the transport mechanism 1 by the transport robot (not shown) arranged on the temporary press-bonding process side, and then the substrate W is placed on the plate P. (Step S3).
　プレートＰと基板Ｗが重ね合わされた状態で、本圧着装置２へと搬送される。このプレートＰを下にして基板Ｗは、図５の二点鎖線で示すように、保持ステージ１０に移載される。プレートＰには、複数個の貫通孔が形成されおり、貫通孔を介して保持ステージ１０に吸着保持される（ステップＳ４）。また、保持ステージ１０は図示しない駆動機構によって、前方（図１のＹ方向）である、圧着ヘッド１４の下方の予め決められた実装位置に移動する。 In the state where the plate P and the substrate W are superposed, the plate P and the substrate W are conveyed to the main crimping apparatus 2. With the plate P facing down, the substrate W is transferred to the holding stage 10 as indicated by the two-dot chain line in FIG. A plurality of through holes are formed in the plate P and are sucked and held by the holding stage 10 through the through holes (step S4). Further, the holding stage 10 is moved to a predetermined mounting position below the pressure-bonding head 14 which is the front (Y direction in FIG. 1) by a driving mechanism (not shown).
　保持ステージ１０にプレートＰおよび基板Ｗが吸着保持された時点からヒータ１１によって加熱が開始される（ステップＳ５）。 The heating is started by the heater 11 from the time when the plate P and the substrate W are attracted and held on the holding stage 10 (step S5).
　保持ステージ１０が実装位置に達すると、図６に示すように、シリンダ１３の作動により圧着ヘッド１４が下降し、複数個の半導体装置Ｃが同時に挟み込まれる。このとき、加熱されている圧着ヘッド１４によって、半導体装置Ｃは、加熱されながら押圧される（ステップＳ６）。 When the holding stage 10 reaches the mounting position, as shown in FIG. 6, the crimping head 14 is lowered by the operation of the cylinder 13, and a plurality of semiconductor devices C are sandwiched simultaneously. At this time, the semiconductor device C is pressed while being heated by the heated crimping head 14 (step S6).
　すなわち、圧着ヘッド１４が所定の高さまで下降したとき、熱硬化性樹脂Ｇは、未硬化状態にあるので、図７に示すように、圧着ヘッド１４の加圧によって半導体装置ＣのバンプＢが熱硬化性樹脂Ｇに押し込まれる。すなわち、半導体装置ＣのバンプＢが基板Ｗの電極に達した後に、熱硬化性樹脂が硬化する。 That is, when the pressure bonding head 14 is lowered to a predetermined height, the thermosetting resin G is in an uncured state, so that the bump B of the semiconductor device C is heated by the pressure of the pressure bonding head 14 as shown in FIG. It is pushed into the curable resin G. That is, after the bump B of the semiconductor device C reaches the electrode of the substrate W, the thermosetting resin is cured.
　熱硬化性樹脂Ｇが完全に硬化する所定時間まで半導体装置Ｃを加圧および加熱すると（ステップＳ７）、圧着ヘッド１４を上方の待機位置に復帰させて加圧を解除するとともに、搬送機構１によりプレートＰと基板Ｗを搬出する（ステップＳ８）。 When the semiconductor device C is pressurized and heated until a predetermined time until the thermosetting resin G is completely cured (step S7), the pressure bonding head 14 is returned to the upper standby position to release the pressure, and the transport mechanism 1 The plate P and the substrate W are carried out (step S8).
　プレートＰと基板Ｗを所定の位置まで搬送した後は、他の搬送ロボットに受け渡すか、或いはストッカに収納する。 After the plate P and the substrate W are transported to a predetermined position, they are transferred to another transport robot or stored in a stocker.
　以上で１枚の基板２上の半導体装置の実装が終了する。以後、所定枚数の基板について同じ動作が繰り返される。 Thus, the mounting of the semiconductor device on one substrate 2 is completed. Thereafter, the same operation is repeated for a predetermined number of substrates.
　この構成によれば、熱硬化性樹脂Ｇの硬化温度以上に維持された保持ステージ上に熱伝導遅延用のプレートＰを載置した上に半導体装置Ｃの仮圧着された基板Ｗを吸着保持するので、圧着ヘッド１４が下降して加圧しきるまで、熱硬化性樹脂Ｇが硬化されることがない。すなわち、本実施例では、図８の実線で示すように、保持ステージ１０上にプレートＰと基板Ｗを載置保持した時点Ｔ１から圧着ヘッド１４を半導体装置Ｃに当接させて加圧を開始する時点Ｔ２（例えば、本実施例では半田溶融温度の時点に設定）までの温度勾配が、プレートＰを介在させていない一点鎖線で示した従来方法の温度勾配よりも小さく、熱硬化性樹脂Ｇの硬化温度よりも低い温度に保つことが可能である。換言すれば、圧着ヘッド１４による半導体装置Ｃの加圧開始までの温度ギャップが、従来方法よりも大きいので、圧着ヘッド１４が所定高さまで下降して半導体装置ＣのバンプＢを基板Ｗの電極に到達させるまで、熱硬化性樹脂Ｇを未硬化状態に保つことができる。その結果、基板Ｗの電極とバンプＢの電気的接続を確実にすることができる。 According to this configuration, the heat conduction delay plate P is placed on the holding stage maintained at a temperature equal to or higher than the curing temperature of the thermosetting resin G, and the temporarily bonded substrate W of the semiconductor device C is sucked and held. Therefore, the thermosetting resin G is not cured until the pressure-bonding head 14 is lowered and fully pressurized. That is, in this embodiment, as shown by the solid line in FIG. 8, pressurization is started by bringing the pressure-bonding head 14 into contact with the semiconductor device C from time T1 when the plate P and the substrate W are placed and held on the holding stage 10. The temperature gradient up to the time point T2 (for example, set at the time of the solder melting temperature in this embodiment) is smaller than the temperature gradient of the conventional method indicated by the one-dot chain line without the plate P interposed therebetween, and the thermosetting resin G It is possible to keep the temperature lower than the curing temperature. In other words, since the temperature gap until the press of the semiconductor device C by the pressure bonding head 14 is larger than that in the conventional method, the pressure bonding head 14 is lowered to a predetermined height and the bump B of the semiconductor device C is used as the electrode of the substrate W. Until reaching, the thermosetting resin G can be kept in an uncured state. As a result, the electrical connection between the electrode of the substrate W and the bump B can be ensured.
　なお、熱硬化性樹脂Ｇの硬化温度はＤＳＣ（示差走査熱量測定）によって測定することができる。 The curing temperature of the thermosetting resin G can be measured by DSC (differential scanning calorimetry).
　本発明は上述した実施例のものに限らず、次のように変形実施することもできる。 The present invention is not limited to the embodiment described above, and can be modified as follows.
　（１）上記実施例装置の圧着ヘッド１４は、１個の半導体装置Ｃを本圧着するシングルタイプまたは、図９に示すように、当該シングルタイプを複数個備えたマルチタイプにも利用することができる。 (1) The pressure-bonding head 14 of the above-described embodiment apparatus can be used for a single type for main-bonding one semiconductor device C or a multi-type having a plurality of the single types as shown in FIG. it can.
　（２）上記実施例装置では、保持ステージ１０と圧着ヘッド１４に備わった各ヒータ１１、１５の温度を同じに設定していが、例えば、次のように温度設定してもよい。例えば、圧着ヘッド１４による半導体装置Ｃの加圧開始時点から当該半導体装置Ｃを介して熱硬化性樹脂Ｇに熱が伝わる時間と、基板ＷおよびプレートＰを介して熱硬化性樹脂Ｇに熱が伝わる時間とが同じタイミングとなるように、各ヒータ１１、１５の温度を適宜に設定変更してもよい。 (2) In the above-described embodiment apparatus, the temperatures of the heaters 11 and 15 provided in the holding stage 10 and the pressure-bonding head 14 are set to be the same, but the temperature may be set as follows, for example. For example, the time during which heat is transmitted to the thermosetting resin G through the semiconductor device C from the start of pressurization of the semiconductor device C by the crimping head 14 and the heat to the thermosetting resin G through the substrate W and the plate P. The temperature of each of the heaters 11 and 15 may be appropriately changed so that the time for transmission is the same.
　また、温度伝達時間は、ヒータ１１、１５の上記の温度設定のみならず、プレートＰの厚みで調整してもよい。この方法によれば、基板Ｗと半導体装置Ｃの熱伝達の差によって生じる恐れのある基板Ｗの反りを抑制することができる。 Further, the temperature transmission time may be adjusted not only by the temperature setting of the heaters 11 and 15 but also by the thickness of the plate P. According to this method, it is possible to suppress warpage of the substrate W that may be caused by a difference in heat transfer between the substrate W and the semiconductor device C.
　（３）半導体装置のバンプＢが、半田ボールまたは銅電極ピラーに半田形成された構成である場合、加圧によって熱硬化性樹脂Ｇに押し込まれたバンプが、基板Ｗの電極に接触するとともに、接触状態から半田が溶融接着するまでの時間、熱硬化性樹脂Ｇが未硬化状態となるよう温度制御すればよい。 (3) When the bump B of the semiconductor device has a configuration in which the solder ball or the copper electrode pillar is soldered, the bump pressed into the thermosetting resin G by the press contacts the electrode of the substrate W, What is necessary is just to control temperature so that the thermosetting resin G will be in an unhardened state for the time from a contact state to a solder melt-bonding.
　（４）上記実施例装置では、保持ステージ１０が、可動テーブル８によって移動可能に構成されていたが、固定された構成であってもよい。この場合、保持フレーム６によってプレートＰと基板Ｗを搬送する時点でアライメントが保たれていればよい。また、プレートＰは、保持フレーム６に固定または一体構成されていてもよい。したがって、本発明において、保持ステージ６上にプレートＰ、基板Ｗの順に重ね合って保持されていればよいので、それぞれの搬送のタイミングは、同時であってもよいし、プレートＰを基板Ｗより先に保持ステージ１０に載置してもよい。 (4) In the above-described embodiment apparatus, the holding stage 10 is configured to be movable by the movable table 8, but may be a fixed configuration. In this case, it is only necessary that the alignment is maintained when the plate P and the substrate W are transported by the holding frame 6. Further, the plate P may be fixed or integrally formed with the holding frame 6. Therefore, in the present invention, it is sufficient that the plate P and the substrate W are stacked and held on the holding stage 6 in this order. It may be placed on the holding stage 10 first.
　（５）上記実施例装置では、１枚の基板Ｗを用いていたが、複数枚の基板Ｗが連なったブレイク前の基板Ｗを用いてもよい。この場合、ブレイク前の基板Ｗに対応したサイズのプレート上に当該複数枚分の基板Ｗ載置し、基板単位で圧着ヘッドの下方でシフトさせながら本圧着すればよい。 (5) In the above-described embodiment apparatus, one substrate W is used, but a substrate W before break in which a plurality of substrates W are connected may be used. In this case, the plurality of substrates W may be placed on a plate having a size corresponding to the substrate W before the break, and the main bonding may be performed while shifting the substrate below the pressure bonding head.
　（６）上記実施例では、プレートＰと基板Ｗを保持ステージ１０に同時に載置しているが、個別に搬送および載置してもよい。この場合、保持ステージ１０にプレートＰを載置した後に基板Ｗを載置することになる。 (6) In the above embodiment, the plate P and the substrate W are placed on the holding stage 10 at the same time, but they may be transported and placed individually. In this case, the substrate W is placed after the plate P is placed on the holding stage 10.
　（７）上記実施例において、プレートＰを再利用する場合、本圧着処理後から新しい基板ＷをプレートＰ上に載置するまでにプレートＰを冷却器によって冷却してもよい。冷却器としては、例えばノズルによってエアーを吹き付けるように構成すればよい。 (7) In the above embodiment, when the plate P is reused, the plate P may be cooled by a cooler after the main pressure bonding process and before the new substrate W is placed on the plate P. What is necessary is just to comprise a cooler, for example so that air may be sprayed with a nozzle.
　（８）上記実施例において、プレートＰは、図１０および図１１に示すように、粘着剤によって基板Ｗに予め貼り付けられていてもよい。プレートＰのサイズは、基板Ｗと同形状で同じ大きさまたは基板以上の大きさであってもよい。この場合、プレートとしては、例えば、ガラス、ステンレス鋼またはポリミドなどから成形したものが適宜に選択される。 (8) In the above embodiment, the plate P may be attached in advance to the substrate W with an adhesive as shown in FIGS. The size of the plate P may be the same shape as the substrate W and the same size or larger than the substrate. In this case, as a plate, what was shape | molded, for example from glass, stainless steel, or a polyimide is selected suitably.
　この構成によれば、基板Ｗがバックグラインドにより薄化された半導体ウエハである場合、剛性の低下した基板Ｗを補強することができる。すなわち、基板Ｗの搬送時に、当該基板Ｗが撓んで半導体装置Ｃが破損するのを抑制することができる。また、上記実施例の処理に比べて保持ステージ１０への搬送回数を低減することができる。すなわち、図４に示すステップＳ３において、プレート付きの基板Ｗを保持ステージ１０に１回だけ搬送して載置するだけでよい。また、ステップＳ８において、本圧着後にプレート付きの基板Ｗを保持ステージ１０から１回だけ搬出するだけでよい。したがって、当該実施形態は、処理速度を向上させることができる。なお、当該プレート付き基板Ｗの搬送は、上記搬送機構１を利用してもよいし、或いは、馬蹄形をしたエンドエフェクタを有する搬送ロボットによってプレートＰを吸着しながら搬送してもよい。 According to this configuration, when the substrate W is a semiconductor wafer thinned by back grinding, the substrate W with reduced rigidity can be reinforced. That is, when the substrate W is transported, the semiconductor device C can be prevented from being bent due to the substrate W being bent. In addition, the number of conveyances to the holding stage 10 can be reduced compared to the processing of the above embodiment. That is, in step S3 shown in FIG. 4, the plate-equipped substrate W only needs to be transported and placed on the holding stage 10 only once. Further, in step S8, the substrate W with the plate may be carried out only once from the holding stage 10 after the main pressure bonding. Therefore, this embodiment can improve the processing speed. In addition, the said board | substrate W with a plate may convey the said board | substrate W, adsorb | sucking the plate P with the conveyance robot which has the end effector of horseshoe shape.
　また、この実施形態において、基板ＷとプレートＰを単に重ね合わせた状態で搬送するようにしてもよい。 In this embodiment, the substrate W and the plate P may be transported in a state where they are simply overlapped.
　なお、この実施形態において、保持ステージ１０から搬出された基板ＷおよびプレートＰを冷却してもよい。例えば、搬送過程または所定位置で保持プレートＰにエアーを吹き付けてもよい。 In this embodiment, the substrate W and the plate P carried out from the holding stage 10 may be cooled. For example, air may be blown to the holding plate P during the conveyance process or at a predetermined position.
　以上のように、本発明は、半導体装置と基板の電極を電気的に精度よく接続させながら熱硬化性樹脂を硬化させるのに適している。 As described above, the present invention is suitable for curing a thermosetting resin while electrically connecting a semiconductor device and an electrode of a substrate with high accuracy.

Claims (19)

  1. 　熱硬化性樹脂を介してバンプを有する半導体装置を基板に実装する実装方法であって、
    　保持ステージと前記半導体装置の間に熱伝導遅延用のプレートを介在させた状態で第１加熱器によって前記保持ステージを熱硬化性樹脂の硬化温度以上で加熱しながら押圧部材によって当該半導体装置を加圧し、バンプを基板の電極と接続するとともに熱硬化性樹脂を硬化させて基板に本圧着する
    　ことを特徴とする実装方法。     A mounting method for mounting a semiconductor device having bumps on a substrate via a thermosetting resin,
    With the heat conduction delay plate interposed between the holding stage and the semiconductor device, the semiconductor device is added by the pressing member while the holding stage is heated by the first heater above the curing temperature of the thermosetting resin. And mounting the bumps to the electrodes of the substrate, curing the thermosetting resin, and finally pressing the substrate to the substrate.
  2. 　請求項１に記載の実装方法において、
    　前記第１加熱器によって加熱された保持ステージ上に熱伝導遅延用のプレートを搬送する第１搬送過程と、
    　未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板をプレート上に搬送する第２搬送過程と、
    　を備えたことを特徴とする実装方法。     The mounting method according to claim 1,
    A first transporting process for transporting a plate for delaying heat conduction onto a holding stage heated by the first heater;
    A second transporting process for transporting a substrate on which a semiconductor device has been temporarily pressure-bonded by the uncured thermosetting resin onto a plate;
    A mounting method characterized by comprising:
  3. 　請求項１または請求項２に記載の実装方法において、
    　第２加熱器を備えた前記押圧部材によって半導体装置を加圧および加熱する
    　ことを特徴とする実装方法。     In the mounting method according to claim 1 or 2,
    The mounting method, wherein the semiconductor device is pressurized and heated by the pressing member including the second heater.
  4. 　請求項３に記載の実装方法において、
    　前記押圧部材の設定温度を熱硬化性樹脂の硬化温度以上にして当該熱硬化性樹脂を加熱する
    　ことを特徴とする実装方法。     The mounting method according to claim 3,
    A mounting method, wherein the thermosetting resin is heated by setting a temperature of the pressing member to be equal to or higher than a curing temperature of the thermosetting resin.
  5. 　請求項１に記載の実装方法において、
    　前記バンプは、半田が設けられており、
    　前記本圧着過程は、熱硬化性樹脂が硬化するまでにバンプの半田を基板の電極に溶融接着させる
    　ことを特徴とする実装方法。     The mounting method according to claim 1,
    The bump is provided with solder,
    The mounting method characterized in that the main press-bonding process includes melt bonding the bump solder to the electrode of the substrate before the thermosetting resin is cured.
  6. 　請求項１に記載の実装方法において、
    　前記本圧着処理後の基板を保持ステージから搬出した後から新しい処理対象の基板をプレートに載置するまでに、当該プレートを冷却する
    　ことを特徴とする実装方法。     The mounting method according to claim 1,
    A mounting method, wherein the plate is cooled after the substrate after the main press-bonding process is carried out from the holding stage until the substrate to be newly processed is placed on the plate.
  7. 　請求項１に記載の実装方法において、
    　前記熱硬化性樹脂は、非導電性接着剤フィルムである
    　ことを特徴とする実装方法。     The mounting method according to claim 1,
    The mounting method, wherein the thermosetting resin is a non-conductive adhesive film.
  8. 　請求項１に記載の実装方法において、
    　未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板と熱伝導遅延用のプレートを重ね合わせて搬送する搬送過程を備えた
    　ことを特徴とする実装方法。     The mounting method according to claim 1,
    A mounting method comprising: a transporting process in which a substrate on which a semiconductor device is temporarily press-bonded with the uncured thermosetting resin and a heat conduction delay plate are stacked and transported.
  9. 　請求項１または請求８に記載の実装方法において、
    　第２加熱器を備えた前記押圧部材によって半導体装置を加圧および加熱する
    　ことを特徴とする実装方法。     In the mounting method according to claim 1 or 8,
    The mounting method, wherein the semiconductor device is pressurized and heated by the pressing member including the second heater.
  10. 　請求項９に記載の実装方法において、
    　前記押圧部材の設定温度を熱硬化性樹脂の硬化温度以上にして当該熱硬化性樹脂を加熱する
    　ことを特徴とする実装方法。     The mounting method according to claim 9,
    A mounting method, wherein the thermosetting resin is heated by setting a temperature of the pressing member to be equal to or higher than a curing temperature of the thermosetting resin.
  11. 　請求項１に記載の実装方法において、
    　前記バンプは、半田が設けられており、
    　前記本圧着過程は、熱硬化性樹脂が硬化するまでにバンプの半田を基板の電極に溶融接着させる
    　ことを特徴とする実装方法。     The mounting method according to claim 1,
    The bump is provided with solder,
    The mounting method characterized in that the main press-bonding process includes melt bonding the bump solder to the electrode of the substrate before the thermosetting resin is cured.
  12. 　請求項１に記載の実装方法において、
    　前記本圧着処理後の基板を保持ステージから搬出した後から新しい処理対象の基板をプレートに載置するまでに、当該プレートを冷却する
    　ことを特徴とする実装方法。     The mounting method according to claim 1,
    A mounting method, wherein the plate is cooled after the substrate after the main press-bonding process is carried out from the holding stage until the substrate to be newly processed is placed on the plate.
  13. 　請求項１に記載の実装方法において、
    　前記熱硬化性樹脂は、非導電性接着剤フィルムである
    　ことを特徴とする実装方法。     The mounting method according to claim 1,
    The mounting method, wherein the thermosetting resin is a non-conductive adhesive film.
  14. 　熱硬化性樹脂を介してバンプを有する半導体装置を基板に実装する実装装置であって、
    　保持ステージと、
    　前記保持ステージを加熱する第１加熱器と、
    　熱伝導遅延用のプレートを前記保持ステージに搬送した後に、未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板を当該プレート上に搬送する搬送機構と、
    　前記保持ステージ上にプレートおよび基板の順に載置保持された当該基板上の半導体装置を押圧部材によって押圧する圧着機構と、
    　前記第１加熱器によって熱硬化性樹脂の硬化温度以上に保持ステージを温度制御する制御部と、
    　と備えたことを特徴とする実装装置。     A mounting device for mounting a semiconductor device having bumps on a substrate via a thermosetting resin,
    Holding stage;
    A first heater for heating the holding stage;
    A transport mechanism for transporting a substrate on which a semiconductor device is temporarily pressure-bonded by the uncured thermosetting resin onto the plate after transporting the heat conduction delay plate to the holding stage;
    A pressure-bonding mechanism that presses the semiconductor device on the substrate placed and held in the order of the plate and the substrate on the holding stage with a pressing member;
    A control unit for controlling the temperature of the holding stage to be equal to or higher than the curing temperature of the thermosetting resin by the first heater;
    A mounting apparatus characterized by comprising:
  15. 　請求項１４に記載の実装装置において、
    　前記押圧部材は、第２加熱器を備え、
    　前記制御部は、第２加熱器によって熱硬化性樹脂の硬化温度以上に押圧部材を温度制御する
    　ことを特徴とする実装装置。     The mounting apparatus according to claim 14, wherein
    The pressing member includes a second heater,
    The said control part controls the temperature of a press member more than the curing temperature of a thermosetting resin with a 2nd heater. The mounting apparatus characterized by the above-mentioned.
  16. 　請求項１４または請求項１５に記載の実装装置において、
    　加熱後のプレートを冷却する冷却器を備えた
    　ことを特徴とする実装装置。     The mounting apparatus according to claim 14 or 15,
    A mounting apparatus comprising a cooler for cooling the heated plate.
  17. 　熱硬化性樹脂を介してバンプを有する半導体装置を基板に実装する実装装置であって、
    　保持ステージと、
    　前記保持ステージを加熱する第１加熱器と、
    　未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板と熱伝導遅延用のプレートを重ね合わせて搬送する搬送機構と、
    　前記保持ステージ上に載置保持された基板の半導体装置を押圧部材によって押圧する圧着機構と、
    　前記第１加熱器によって熱硬化性樹脂の硬化温度以上に保持ステージを温度制御する制御部と、
    　と備えたことを特徴とする実装装置。     A mounting device for mounting a semiconductor device having bumps on a substrate via a thermosetting resin,
    Holding stage;
    A first heater for heating the holding stage;
    A transport mechanism that stacks and transports a substrate on which a semiconductor device is temporarily bonded by the uncured thermosetting resin and a plate for heat conduction delay;
    A pressure-bonding mechanism that presses the semiconductor device of the substrate placed and held on the holding stage with a pressing member;
    A control unit for controlling the temperature of the holding stage to be equal to or higher than the curing temperature of the thermosetting resin by the first heater;
    A mounting apparatus characterized by comprising:
  18. 　請求項１７に記載の実装装置において、
    　前記押圧部材は、第２加熱器を備え、
    　前記制御部は、第２加熱器によって熱硬化性樹脂の硬化温度以上に押圧部材を温度制御する
    　ことを特徴とする実装装置。     The mounting apparatus according to claim 17,
    The pressing member includes a second heater,
    The said control part controls the temperature of a press member more than the curing temperature of a thermosetting resin with a 2nd heater. The mounting apparatus characterized by the above-mentioned.
  19. 　請求項１７または請求項１８に記載の実装装置において、
    　加熱後のプレートを冷却する冷却器を備えた
    　ことを特徴とする実装装置。     The mounting apparatus according to claim 17 or 18,
    A mounting apparatus comprising a cooler for cooling the heated plate.
PCT/JP2015/050380 2014-01-08 2015-01-08 Mounting method for semiconductor device and mounting device WO2015105149A1 (en)

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JP2010010628A (en) * 2008-06-30 2010-01-14 Nikon Corp Bonding apparatus and bonding method
JP2010114208A (en) * 2008-11-05 2010-05-20 Nikon Corp Cooling apparatus and joining system
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JP2010010628A (en) * 2008-06-30 2010-01-14 Nikon Corp Bonding apparatus and bonding method
JP2010114208A (en) * 2008-11-05 2010-05-20 Nikon Corp Cooling apparatus and joining system
JP2010245195A (en) * 2009-04-02 2010-10-28 Nec Corp Apparatus for manufacturing semiconductor device, and method for manufacturing semiconductor device
WO2011089863A1 (en) * 2010-01-22 2011-07-28 ソニーケミカル＆インフォメーションデバイス株式会社 Heating device and production method for mounted body

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KR20160105415A (en) 2016-09-06

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