WO2015105149A1 - Mounting method for semiconductor device and mounting device - Google Patents
Mounting method for semiconductor device and mounting device Download PDFInfo
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- WO2015105149A1 WO2015105149A1 PCT/JP2015/050380 JP2015050380W WO2015105149A1 WO 2015105149 A1 WO2015105149 A1 WO 2015105149A1 JP 2015050380 W JP2015050380 W JP 2015050380W WO 2015105149 A1 WO2015105149 A1 WO 2015105149A1
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Abstract
Description
保持ステージと前記半導体装置の間に熱伝導遅延用のプレートを介在させた状態で第1加熱器によって前記保持ステージを熱硬化性樹脂の硬化温度以上で加熱しながら押圧部材によって当該半導体装置を加圧し、バンプを基板の電極と接続するとともに熱硬化性樹脂を硬化させて基板に本圧着することを特徴とする。 That is, a mounting method for mounting a semiconductor device having bumps on a substrate via a thermosetting resin,
With the heat conduction delay plate interposed between the holding stage and the semiconductor device, the semiconductor device is added by the pressing member while the holding stage is heated by the first heater above the curing temperature of the thermosetting resin. The bumps are connected to the electrodes of the substrate, the thermosetting resin is cured, and the pressure bonding is performed to the substrate.
本圧着過程は、熱硬化性樹脂が硬化するまでにバンプの半田を基板の電極に溶融接着させるよう温度設定することが好ましい。 In the above method, when solder is provided as a bump,
In this press-bonding process, it is preferable to set the temperature so that the solder of the bump is melt bonded to the electrode of the substrate before the thermosetting resin is cured.
保持ステージと、
前記保持ステージを加熱する第1加熱器と、
熱伝導遅延用のプレートを前記保持ステージに搬送した後に、未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板を当該プレート上に搬送する搬送機構と、
前記保持ステージ上にプレートおよび基板の順に載置保持された当該基板上の半導体装置を押圧部材によって押圧する圧着機構と、
前記第1加熱器によって熱硬化性樹脂の硬化温度以上に保持ステージを温度制御する制御部と、
を備えたことを特徴とする。 That is, a mounting device for mounting a semiconductor device having bumps on a substrate via a thermosetting resin,
Holding stage;
A first heater for heating the holding stage;
A transport mechanism for transporting a substrate on which a semiconductor device is temporarily pressure-bonded by the uncured thermosetting resin onto the plate after transporting the heat conduction delay plate to the holding stage;
A pressure-bonding mechanism that presses the semiconductor device on the substrate placed and held in the order of the plate and the substrate on the holding stage with a pressing member;
A control unit for controlling the temperature of the holding stage to be equal to or higher than the curing temperature of the thermosetting resin by the first heater;
It is provided with.
保持ステージと、
前記保持ステージを加熱する第1加熱器と、
未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板に熱伝導遅延用のプレートを重ね合わせて搬送する搬送機構と、
前記保持ステージ上に載置保持された基板の半導体装置を押圧部材によって押圧する圧着機構と、
前記第1加熱器によって熱硬化性樹脂の硬化温度以上に保持ステージを温度制御する制御部と、
を備えたことを特徴とする。 As another embodiment, a mounting device for mounting a semiconductor device having a bump on a substrate via a thermosetting resin,
Holding stage;
A first heater for heating the holding stage;
A transport mechanism for transporting a heat conduction delay plate superimposed on a substrate on which a semiconductor device is temporarily press-bonded with the uncured thermosetting resin;
A pressure-bonding mechanism that presses the semiconductor device of the substrate placed and held on the holding stage with a pressing member;
A control unit for controlling the temperature of the holding stage to be equal to or higher than the curing temperature of the thermosetting resin by the first heater;
It is provided with.
制御部は、第2加熱器によって熱硬化性樹脂の硬化温度以上に押圧部材を温度制御することが好ましい。 In each of the above configurations, the pressing member includes a second heater,
The controller preferably controls the temperature of the pressing member to be equal to or higher than the curing temperature of the thermosetting resin by the second heater.
2 … 本圧着装置
3 … 可動台
4 … 搬送アーム
5 … ガイドレール
6 … 保持フレーム
7 … 係止爪
8 … 可動テーブル
9 … 押圧機構
10 … 保持ステージ
11 … ヒータ
13 … シリンダ
14 … 圧着ヘッド
15 … ヒータ
W … 基板
C … 半導体装置
G … 熱硬化性樹脂
P … 熱伝達遅延用のプレート DESCRIPTION OF
Claims (19)
- 熱硬化性樹脂を介してバンプを有する半導体装置を基板に実装する実装方法であって、
保持ステージと前記半導体装置の間に熱伝導遅延用のプレートを介在させた状態で第1加熱器によって前記保持ステージを熱硬化性樹脂の硬化温度以上で加熱しながら押圧部材によって当該半導体装置を加圧し、バンプを基板の電極と接続するとともに熱硬化性樹脂を硬化させて基板に本圧着する
ことを特徴とする実装方法。 A mounting method for mounting a semiconductor device having bumps on a substrate via a thermosetting resin,
With the heat conduction delay plate interposed between the holding stage and the semiconductor device, the semiconductor device is added by the pressing member while the holding stage is heated by the first heater above the curing temperature of the thermosetting resin. And mounting the bumps to the electrodes of the substrate, curing the thermosetting resin, and finally pressing the substrate to the substrate. - 請求項1に記載の実装方法において、
前記第1加熱器によって加熱された保持ステージ上に熱伝導遅延用のプレートを搬送する第1搬送過程と、
未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板をプレート上に搬送する第2搬送過程と、
を備えたことを特徴とする実装方法。 The mounting method according to claim 1,
A first transporting process for transporting a plate for delaying heat conduction onto a holding stage heated by the first heater;
A second transporting process for transporting a substrate on which a semiconductor device has been temporarily pressure-bonded by the uncured thermosetting resin onto a plate;
A mounting method characterized by comprising: - 請求項1または請求項2に記載の実装方法において、
第2加熱器を備えた前記押圧部材によって半導体装置を加圧および加熱する
ことを特徴とする実装方法。 In the mounting method according to claim 1 or 2,
The mounting method, wherein the semiconductor device is pressurized and heated by the pressing member including the second heater. - 請求項3に記載の実装方法において、
前記押圧部材の設定温度を熱硬化性樹脂の硬化温度以上にして当該熱硬化性樹脂を加熱する
ことを特徴とする実装方法。 The mounting method according to claim 3,
A mounting method, wherein the thermosetting resin is heated by setting a temperature of the pressing member to be equal to or higher than a curing temperature of the thermosetting resin. - 請求項1に記載の実装方法において、
前記バンプは、半田が設けられており、
前記本圧着過程は、熱硬化性樹脂が硬化するまでにバンプの半田を基板の電極に溶融接着させる
ことを特徴とする実装方法。 The mounting method according to claim 1,
The bump is provided with solder,
The mounting method characterized in that the main press-bonding process includes melt bonding the bump solder to the electrode of the substrate before the thermosetting resin is cured. - 請求項1に記載の実装方法において、
前記本圧着処理後の基板を保持ステージから搬出した後から新しい処理対象の基板をプレートに載置するまでに、当該プレートを冷却する
ことを特徴とする実装方法。 The mounting method according to claim 1,
A mounting method, wherein the plate is cooled after the substrate after the main press-bonding process is carried out from the holding stage until the substrate to be newly processed is placed on the plate. - 請求項1に記載の実装方法において、
前記熱硬化性樹脂は、非導電性接着剤フィルムである
ことを特徴とする実装方法。 The mounting method according to claim 1,
The mounting method, wherein the thermosetting resin is a non-conductive adhesive film. - 請求項1に記載の実装方法において、
未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板と熱伝導遅延用のプレートを重ね合わせて搬送する搬送過程を備えた
ことを特徴とする実装方法。 The mounting method according to claim 1,
A mounting method comprising: a transporting process in which a substrate on which a semiconductor device is temporarily press-bonded with the uncured thermosetting resin and a heat conduction delay plate are stacked and transported. - 請求項1または請求8に記載の実装方法において、
第2加熱器を備えた前記押圧部材によって半導体装置を加圧および加熱する
ことを特徴とする実装方法。 In the mounting method according to claim 1 or 8,
The mounting method, wherein the semiconductor device is pressurized and heated by the pressing member including the second heater. - 請求項9に記載の実装方法において、
前記押圧部材の設定温度を熱硬化性樹脂の硬化温度以上にして当該熱硬化性樹脂を加熱する
ことを特徴とする実装方法。 The mounting method according to claim 9,
A mounting method, wherein the thermosetting resin is heated by setting a temperature of the pressing member to be equal to or higher than a curing temperature of the thermosetting resin. - 請求項1に記載の実装方法において、
前記バンプは、半田が設けられており、
前記本圧着過程は、熱硬化性樹脂が硬化するまでにバンプの半田を基板の電極に溶融接着させる
ことを特徴とする実装方法。 The mounting method according to claim 1,
The bump is provided with solder,
The mounting method characterized in that the main press-bonding process includes melt bonding the bump solder to the electrode of the substrate before the thermosetting resin is cured. - 請求項1に記載の実装方法において、
前記本圧着処理後の基板を保持ステージから搬出した後から新しい処理対象の基板をプレートに載置するまでに、当該プレートを冷却する
ことを特徴とする実装方法。 The mounting method according to claim 1,
A mounting method, wherein the plate is cooled after the substrate after the main press-bonding process is carried out from the holding stage until the substrate to be newly processed is placed on the plate. - 請求項1に記載の実装方法において、
前記熱硬化性樹脂は、非導電性接着剤フィルムである
ことを特徴とする実装方法。 The mounting method according to claim 1,
The mounting method, wherein the thermosetting resin is a non-conductive adhesive film. - 熱硬化性樹脂を介してバンプを有する半導体装置を基板に実装する実装装置であって、
保持ステージと、
前記保持ステージを加熱する第1加熱器と、
熱伝導遅延用のプレートを前記保持ステージに搬送した後に、未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板を当該プレート上に搬送する搬送機構と、
前記保持ステージ上にプレートおよび基板の順に載置保持された当該基板上の半導体装置を押圧部材によって押圧する圧着機構と、
前記第1加熱器によって熱硬化性樹脂の硬化温度以上に保持ステージを温度制御する制御部と、
と備えたことを特徴とする実装装置。 A mounting device for mounting a semiconductor device having bumps on a substrate via a thermosetting resin,
Holding stage;
A first heater for heating the holding stage;
A transport mechanism for transporting a substrate on which a semiconductor device is temporarily pressure-bonded by the uncured thermosetting resin onto the plate after transporting the heat conduction delay plate to the holding stage;
A pressure-bonding mechanism that presses the semiconductor device on the substrate placed and held in the order of the plate and the substrate on the holding stage with a pressing member;
A control unit for controlling the temperature of the holding stage to be equal to or higher than the curing temperature of the thermosetting resin by the first heater;
A mounting apparatus characterized by comprising: - 請求項14に記載の実装装置において、
前記押圧部材は、第2加熱器を備え、
前記制御部は、第2加熱器によって熱硬化性樹脂の硬化温度以上に押圧部材を温度制御する
ことを特徴とする実装装置。 The mounting apparatus according to claim 14, wherein
The pressing member includes a second heater,
The said control part controls the temperature of a press member more than the curing temperature of a thermosetting resin with a 2nd heater. The mounting apparatus characterized by the above-mentioned. - 請求項14または請求項15に記載の実装装置において、
加熱後のプレートを冷却する冷却器を備えた
ことを特徴とする実装装置。 The mounting apparatus according to claim 14 or 15,
A mounting apparatus comprising a cooler for cooling the heated plate. - 熱硬化性樹脂を介してバンプを有する半導体装置を基板に実装する実装装置であって、
保持ステージと、
前記保持ステージを加熱する第1加熱器と、
未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板と熱伝導遅延用のプレートを重ね合わせて搬送する搬送機構と、
前記保持ステージ上に載置保持された基板の半導体装置を押圧部材によって押圧する圧着機構と、
前記第1加熱器によって熱硬化性樹脂の硬化温度以上に保持ステージを温度制御する制御部と、
と備えたことを特徴とする実装装置。 A mounting device for mounting a semiconductor device having bumps on a substrate via a thermosetting resin,
Holding stage;
A first heater for heating the holding stage;
A transport mechanism that stacks and transports a substrate on which a semiconductor device is temporarily bonded by the uncured thermosetting resin and a plate for heat conduction delay;
A pressure-bonding mechanism that presses the semiconductor device of the substrate placed and held on the holding stage with a pressing member;
A control unit for controlling the temperature of the holding stage to be equal to or higher than the curing temperature of the thermosetting resin by the first heater;
A mounting apparatus characterized by comprising: - 請求項17に記載の実装装置において、
前記押圧部材は、第2加熱器を備え、
前記制御部は、第2加熱器によって熱硬化性樹脂の硬化温度以上に押圧部材を温度制御する
ことを特徴とする実装装置。 The mounting apparatus according to claim 17,
The pressing member includes a second heater,
The said control part controls the temperature of a press member more than the curing temperature of a thermosetting resin with a 2nd heater. The mounting apparatus characterized by the above-mentioned. - 請求項17または請求項18に記載の実装装置において、
加熱後のプレートを冷却する冷却器を備えた
ことを特徴とする実装装置。 The mounting apparatus according to claim 17 or 18,
A mounting apparatus comprising a cooler for cooling the heated plate.
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003249532A (en) * | 2002-02-26 | 2003-09-05 | Seiko Epson Corp | Mounting structure, its manufacturing method, its manufacturing device, and electronic apparatus |
JP2010010628A (en) * | 2008-06-30 | 2010-01-14 | Nikon Corp | Bonding apparatus and bonding method |
JP2010114208A (en) * | 2008-11-05 | 2010-05-20 | Nikon Corp | Cooling apparatus and joining system |
JP2010245195A (en) * | 2009-04-02 | 2010-10-28 | Nec Corp | Apparatus for manufacturing semiconductor device, and method for manufacturing semiconductor device |
WO2011089863A1 (en) * | 2010-01-22 | 2011-07-28 | ソニーケミカル&インフォメーションデバイス株式会社 | Heating device and production method for mounted body |
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JP4832107B2 (en) * | 2006-02-23 | 2011-12-07 | ソニーケミカル&インフォメーションデバイス株式会社 | Implementation method |
JP2008294396A (en) * | 2007-04-23 | 2008-12-04 | Hitachi Chem Co Ltd | Connecting method, connection device, and connection structure obtained by using same connecting method |
JP5401709B2 (en) | 2010-02-02 | 2014-01-29 | アピックヤマダ株式会社 | Bonding apparatus and bonding method for semiconductor device |
JP5892682B2 (en) * | 2011-04-27 | 2016-03-23 | アピックヤマダ株式会社 | Joining method |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003249532A (en) * | 2002-02-26 | 2003-09-05 | Seiko Epson Corp | Mounting structure, its manufacturing method, its manufacturing device, and electronic apparatus |
JP2010010628A (en) * | 2008-06-30 | 2010-01-14 | Nikon Corp | Bonding apparatus and bonding method |
JP2010114208A (en) * | 2008-11-05 | 2010-05-20 | Nikon Corp | Cooling apparatus and joining system |
JP2010245195A (en) * | 2009-04-02 | 2010-10-28 | Nec Corp | Apparatus for manufacturing semiconductor device, and method for manufacturing semiconductor device |
WO2011089863A1 (en) * | 2010-01-22 | 2011-07-28 | ソニーケミカル&インフォメーションデバイス株式会社 | Heating device and production method for mounted body |
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JPWO2015105149A1 (en) | 2017-03-23 |
TWI656582B (en) | 2019-04-11 |
KR20160105415A (en) | 2016-09-06 |
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