WO2015104921A1 - Onboard electronic control device - Google Patents

Onboard electronic control device Download PDF

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WO2015104921A1
WO2015104921A1 PCT/JP2014/081926 JP2014081926W WO2015104921A1 WO 2015104921 A1 WO2015104921 A1 WO 2015104921A1 JP 2014081926 W JP2014081926 W JP 2014081926W WO 2015104921 A1 WO2015104921 A1 WO 2015104921A1
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circuit
driver circuit
current
output
driver
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PCT/JP2014/081926
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French (fr)
Japanese (ja)
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修一 宮岡
小林 良一
金川 信康
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日立オートモティブシステムズ株式会社
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Priority to JP2015556732A priority Critical patent/JPWO2015104921A1/en
Publication of WO2015104921A1 publication Critical patent/WO2015104921A1/en

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches

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  • the present invention relates to a vehicle-mounted control device including a driver for driving a load and a pre-driver in the preceding stage, and a response to a failure of the drive circuit.
  • JP 2012-157154 As background art in this technical field, for example, there is JP 2012-157154. This publication describes that a failure is detected at a corresponding location and the current is cut off. As background arts in this technical field, there are also JP 2012-157154 A and JP 2010-098907 A.
  • in-vehicle electronic control devices have integrated electronic circuits in the in-vehicle electronic control devices such as injectors, igniters, and solenoids into silicon chips from the viewpoints of the number of parts, cost reduction, and downsizing. It has been studied and put into practical use. Conventionally, when these drive circuits are short-circuited due to a failure, a short-circuit current flows, but the current cut-off means is not provided. An overcurrent detection circuit is provided, and if an overcurrent is detected, the operation of the drive circuit is often stopped and the current is not cut off.
  • Patent Document 1 in recent years, an approach for detecting a failure at a corresponding portion and cutting off the current has been implemented. However, when the gate of the MOS transistor is destroyed, an abnormal current from the previous circuit is also assumed. Further, since the predriver output is not fixed, there is a problem that the operation of the driver circuit becomes unstable.
  • an object of the present invention is to provide a low-cost multi-function IC capable of continuing stable operation of functions other than the corresponding defective portion even when an abnormality occurs in the pre-driver circuit.
  • An object of the present invention is to have an overcurrent detection circuit and a current cut-off circuit as an example, detect an overcurrent, and cut off the current path. Further, when the current is interrupted, this can be achieved by fixing the pre-driver output to Lo or Hi so that the driver circuit does not cause unstable operation due to input floating.
  • the present invention even when an abnormality occurs in the pre-driver circuit, it is possible to provide a multi-function IC capable of continuing stable operation of functions other than the corresponding defective portion at a low cost.
  • FIG. 2 is a block diagram showing a configuration example of a current interrupt circuit according to the first embodiment of the present invention. It is a block diagram which shows the structural example of the multifunctional semiconductor device containing the predriver circuit by the 2nd Embodiment of this invention. It is a block diagram which shows the structural example of the multifunctional semiconductor device containing the predriver circuit by a prior art.
  • FIG. 1 is a block diagram showing a configuration of an embodiment of a multifunction semiconductor device including a pre-driver circuit according to the present invention. 1 is different from the conventional device of FIG. 4 in that a current cut-off switch 25 is provided between the high-side push-pull circuit 19 and the booster circuit 5, and the low-side push-pull circuit of each phase. The difference is that a current cut-off switching element 32 is provided between the power supply circuit 18 and the power supply circuit 4.
  • the feature of the present invention is that, as shown in FIG. 1, the current interrupt switching elements 25 and 32 and the potential fixing switching elements 29 and 39 are provided in a multi-function IC including a pre-driver circuit.
  • the current cut-off switch elements 25 and 32 are provided when the semiconductor switch element 20, 21, 35 or 36 of the pre-driver circuit 14 is short-circuited due to junction breakdown or dielectric breakdown and a large current flows.
  • the current flowing through the pre-driver circuit 14 is cut off.
  • fusing / burning failure due to a large current can be prevented, and the boosted voltage output from the booster circuit 5 or the power supply voltage supplied from the power supply circuit 4 can be prevented from decreasing.
  • other driver boosted voltages or power supply voltages are not affected, and normal output is possible.
  • FIG. 2 is a block diagram showing a configuration example of the current interruption control circuit 11 according to the first embodiment of the present invention.
  • the current cutoff control circuit 11 of this embodiment includes operational amplifiers 45 and 46, filter circuits 47 and 48, and a logic circuit 14.
  • the current cutoff switching element 25 is shown as a representative example, but the current cutoff switching element 32 also has the same configuration.
  • the normal operation is as follows.
  • the high-side semiconductor switch element 27 is turned on and the low-side semiconductor switch element 42 is turned off. At this time, the output of the high-side push-pull circuit 19 is controlled to Hi and the output of the low-side push-pull circuit 18 is controlled to Lo.
  • the high-side semiconductor switch element 27 is turned off and the low-side semiconductor switch element 42 is turned on. At this time, the output of the high-side push-pull circuit 19 is controlled to Lo and the output of the low-side push-pull circuit 18 is controlled to Hi.
  • the short-circuit / open-circuit detections 93 and 94 convert the detection current into a detection voltage and output it to the operational amplifiers 45 and 46.
  • the detected voltage is input to the non-inverting input side of the operational amplifiers 45 and 46.
  • the operational amplifiers 45 and 46 compare the current detection voltage from the short-circuit / open-circuit detection circuits 93 and 94 input to the non-inverting input side with the reference voltage input to the inverting input side, and a comparator corresponding to the comparison result The output is output to the filter circuits 47 and 48.
  • the comparator outputs that have passed through the filter circuits 47 and 48 are logically ORed with the arithmetic processing unit signal by the logic circuit 14 and send out a fault diagnosis output 24.
  • the occurrence of an abnormality can be detected by outputting the failure diagnosis output 24.
  • the detected abnormality is transmitted to the arithmetic processing unit 10 by the SPI signal, and abnormality processing is performed.
  • the fault diagnosis output 24 turns off the current cutoff switching element 25 of the high-side push-pull circuit and the current cutoff switching 32 of the low-side push-pull circuit, and a through current from the booster circuit 5 to the ground via the boosted voltage supply wiring 7
  • the through current flowing from the power supply circuit 4 to the low-side driver 18 is cut off.
  • the through current includes the current flowing between the source and drain of the switching elements 20, 21, 35, and 36 and the push-pull circuits 22 and 37 of the previous stage via the gate electrodes of the switching elements 20, 21, 35 and 36. Some of them flow into the source electrode.
  • a current cut-off switching element 25 is arranged in the power supply section of the high side push-pull circuit 19 and its preceding push-pull circuit, and the low side push-pull circuit 18 and its previous push-pull circuit 37.
  • the current interrupting switching element 32 is disposed in the GND power supply section.
  • the current interrupt control circuit 11 can also control the on / off of the current interrupt switching elements 25 and 32 by the arithmetic processing unit signal output from the arithmetic processing unit 10. That is, it is determined in the arithmetic processing device 10 whether or not a predetermined current interruption condition is satisfied, and when it is determined that the current interruption condition is satisfied, an arithmetic processing device signal is output from the arithmetic processing device 10 to the current interruption control circuit 11. By doing so, the current supply from the power supply circuit 4 to the pre-driver circuit 14 can be forcibly cut off.
  • the arithmetic processing unit 10 can perform on / off control of the current cutoff switching elements 25 and 32 by the arithmetic processing unit signal even when detecting an abnormality in the driver circuit.
  • the multi-function semiconductor device 3 including a pre-driver function is provided for controlling the operations of the high-side semiconductor switch element 27 and the low-side semiconductor switch element 42 and the high-side semiconductor switch element 27 and the low-side semiconductor switch element 42.
  • the pre-driver circuit 14 includes a high-side push-pull circuit 19 provided corresponding to the high-side semiconductor switch element 27 and a low-side push-pull circuit 18 provided corresponding to the low-side semiconductor switch element 42.
  • Current cutoff switching elements 25 and 32 cut off the supply of current to both the high-side push-pull circuit 19 and the low-side push-pull circuit 18, turn on the potential fixing elements 29 and 39, and output the high-side driver output. Fixed low side driver output to high level.
  • the operations of the high-side push-pull circuit 19 and the low-side push-pull circuit 18 are appropriately controlled by the high-side push-pull circuit 19 and the low-side push-pull circuit 18, respectively.
  • the current supply to the circuit is cut off, and other functions are not adversely affected.
  • the current interruption control circuit 11 changes the output voltage of the voltage follower circuit by the operational amplifiers 45 and 46 when the magnitude of the current detected by the current detection circuits 93 and 94 is equal to or greater than a predetermined value. 24 is output.
  • the failure diagnosis signal 24 turns off the current cutoff switching elements 25 and 32 to cut off the supply of current from the power supply circuit 4 and the booster circuit 5 to the pre-driver circuit 14. Thereby, it is possible to reliably detect an abnormality occurring in the pre-driver circuit 14 and cut off the current supply.
  • the current interruption control circuit 11 notifies the arithmetic processing unit 10 that an abnormality has occurred through an SPI (serial peripheral interface) circuit or an MSC (microsecond channel) circuit.
  • SPI serial peripheral interface
  • MSC microsecond channel
  • the multifunctional semiconductor device 3 integrates a plurality of circuits including at least the pre-driver circuit 14, the logic circuit 11, the various drive circuits 51, the power supply circuit 4, the booster circuit 5, and the current cutoff control circuit 11. Thereby, size reduction and cost reduction of a motor control apparatus etc. can be achieved.
  • the abnormality is detected by the short-circuit detection circuit 52.
  • the abnormality detection signal 53 is transmitted to the arithmetic processing device 10.
  • the arithmetic processing unit 10 outputs a current cutoff signal 54, turns off the high-side current source switch element 28 via the boost driver circuit 61, and causes the current cutoff control circuit 11 to output an arithmetic processing unit signal through the SPI circuit or the MSC circuit. 55 is sent out.
  • the current cutoff control circuit 11 cuts off the current of the pre-driver circuit 14 and fixes the output to low level / high level.
  • the driver IC Using a serial communication between the microcontroller and the driver IC, the driver IC has a control unit that performs diagnostic control of the driver IC. When a failure is detected, the circuit is immediately deactivated. The occurrence of serious defects such as fusing can be prevented. Therefore, it can be applied to an apparatus that requires high reliability.

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Abstract

The purpose of the present invention is to provide, at a low cost, a multifunctional integrated circuit (IC) that can continue stable operations with the exception of the part that is affected when an abnormality has occurred in a pre-driver circuit. The multifunctional semiconductor device (1), which includes a pre-driver circuit, is provided with current interruption circuits (25, 32). When a large current has flowed into the pre-driver circuit as a result of a short-circuit fault due to junction breakdown or dielectric breakdown that is caused by noise applied to any of the switching components (20, 21, 35, 36) of the pre-driver circuit (14), the current flowing in the faulty pre-driver circuit (14) is interrupted by the current interruption circuits (25, 32), preventing a drop in the power supply voltage. In such case, the output potential of the pre-driver is fixed to a low level at the high side and to a high level at the low side to render the circuit inactive.

Description

車載用電子制御装置In-vehicle electronic control unit
 本発明は、負荷を駆動するドライバ及びその前段にあるプリドライバを備える車載用制御装置及びその駆動回路故障時の対応に関するものである。 The present invention relates to a vehicle-mounted control device including a driver for driving a load and a pre-driver in the preceding stage, and a response to a failure of the drive circuit.
 本技術分野の背景技術としては、例えば特開2012-157154号公報がある。本公報には該当箇所の故障を検出し電流を遮断することが記載されている。また、本技術分野の背景技術としては、特開2012-157154号公報や特開2010-098907号公報もある。 As background art in this technical field, for example, there is JP 2012-157154. This publication describes that a failure is detected at a corresponding location and the current is cut off. As background arts in this technical field, there are also JP 2012-157154 A and JP 2010-098907 A.
特開2012-158318号公報JP 2012-158318 A 特開2012-157154号公報JP 2012-157154 A 特開2010-098907号公報JP 2010-098907 A
 近年、車載用電子制御装置は、部品点数・コスト削減、ダウンサイジングといった観点から、車載用電子制御装置内における電子回路、例えばインジェクタ、イグナイタ、ソレノイド等のアクチュエータの駆動回路をシリコンチップに集積化することが検討され、実用化されている。従来、これらの駆動回路が故障により短絡した際、短絡電流が流れるが、その電流遮断手段を具備していない。過電流検出回路を具備しており、過電流が検出すれば、駆動回路の動作は停止するものが多く電流遮断までは行っていない。 In recent years, in-vehicle electronic control devices have integrated electronic circuits in the in-vehicle electronic control devices such as injectors, igniters, and solenoids into silicon chips from the viewpoints of the number of parts, cost reduction, and downsizing. It has been studied and put into practical use. Conventionally, when these drive circuits are short-circuited due to a failure, a short-circuit current flows, but the current cut-off means is not provided. An overcurrent detection circuit is provided, and if an overcurrent is detected, the operation of the drive circuit is often stopped and the current is not cut off.
 また、特許文献1にあるように昨今では、該当箇所の故障を検出し、電流を遮断する取組みも実施されている。しかし、MOSトランジスタのゲートが破壊された場合、前段回路からの異常電流も想定される。また、プリドライバ出力が固定されていないため、ドライバ回路の動作が不安定になってしまうという課題もある。 Also, as disclosed in Patent Document 1, in recent years, an approach for detecting a failure at a corresponding portion and cutting off the current has been implemented. However, when the gate of the MOS transistor is destroyed, an abnormal current from the previous circuit is also assumed. Further, since the predriver output is not fixed, there is a problem that the operation of the driver circuit becomes unstable.
 過電流が流れ続ければ、集積回路が焼損し、ICとして実装した全ての機能が失われてしまう。その場合、重大事故に繋がる。一方、市場要求としては、故障箇所のみ切り離して(電流経路を遮断して)、正常回路は動作し続けることが強く求められている。 If the overcurrent continues to flow, the integrated circuit will burn out and all functions implemented as an IC will be lost. In that case, it leads to a serious accident. On the other hand, as a market requirement, it is strongly demanded that a normal circuit continues to operate by disconnecting only a fault location (cutting off a current path).
 また、特許文献2に示された電流遮断方式では、MOSトランジスタのゲートが絶縁破壊された場合、前段回路からの異常電流も想定されるが、対応できていないという課題もある。さらには、プリドライバ出力が固定されていないため、ドライバ回路の動作が不安定になってしまう課題もある。 In addition, in the current interruption method shown in Patent Document 2, when the gate of the MOS transistor is broken down, an abnormal current from the previous circuit is assumed, but there is a problem that it cannot be dealt with. Furthermore, since the predriver output is not fixed, there is a problem that the operation of the driver circuit becomes unstable.
 そこで本発明の目的は、プリドライバ回路に異常が発生した場合においても、該当不良箇所以外の機能は安定した動作を続けることができる多機能ICを低コストで提供することを目的とする。 Therefore, an object of the present invention is to provide a low-cost multi-function IC capable of continuing stable operation of functions other than the corresponding defective portion even when an abnormality occurs in the pre-driver circuit.
 本発明の目的は、その一例として過電流検出回路及び電流遮断回路を有し、過電流を検出し、その電流経路を遮断する。また、電流遮断した場合、ドライバ回路が入力フローティングで不安定動作に至らぬようプリドライバ出力をLo固定またはHi固定することで達成できる。 An object of the present invention is to have an overcurrent detection circuit and a current cut-off circuit as an example, detect an overcurrent, and cut off the current path. Further, when the current is interrupted, this can be achieved by fixing the pre-driver output to Lo or Hi so that the driver circuit does not cause unstable operation due to input floating.
  本発明によれば、プリドライバ回路に異常が発生した場合においても、該当不良箇所以外の機能は安定した動作を続けることができる多機能ICを低コストで提供することができる。 According to the present invention, even when an abnormality occurs in the pre-driver circuit, it is possible to provide a multi-function IC capable of continuing stable operation of functions other than the corresponding defective portion at a low cost.
本発明によるプリドライバ回路を含む多機能半導体装置の一実施形態の構成を示すブロック図である。It is a block diagram which shows the structure of one Embodiment of the multifunctional semiconductor device containing the predriver circuit by this invention. 本発明の第1の実施の形態による電流遮断回路の構成例を示すブロック図で ある。FIG. 2 is a block diagram showing a configuration example of a current interrupt circuit according to the first embodiment of the present invention. 本発明の第2の実施の形態によるプリドライバ回路を含む多機能半導体装置の構成例を示すブロック図である。It is a block diagram which shows the structural example of the multifunctional semiconductor device containing the predriver circuit by the 2nd Embodiment of this invention. 従来技術によるプリドライバ回路を含む多機能半導体装置の構成例を示すブロック図である。It is a block diagram which shows the structural example of the multifunctional semiconductor device containing the predriver circuit by a prior art.
 以下、図面を用いて実施例について説明する。 Hereinafter, examples will be described with reference to the drawings.
 以下、図1から図3を参照して、本発明の実施例を説明する。 Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 to 3.
 図1は、本発明によるプリドライバ回路を含む多機能半導体装置の一実施形態の構成を示すブロック図である。図1の多機能半導体装置は、図4の従来装置と比較して、ハイサイドプッシュプル回路19と昇圧回路5の間に電流遮断スイッチ25を設けた点と、各相のロウサイドプッシュプル回路18と電源回路4の間に電流遮断スイッチング素子32を設けた点とが異なっている。 FIG. 1 is a block diagram showing a configuration of an embodiment of a multifunction semiconductor device including a pre-driver circuit according to the present invention. 1 is different from the conventional device of FIG. 4 in that a current cut-off switch 25 is provided between the high-side push-pull circuit 19 and the booster circuit 5, and the low-side push-pull circuit of each phase. The difference is that a current cut-off switching element 32 is provided between the power supply circuit 18 and the power supply circuit 4.
 本発明の特徴は、図1に示すように、プリドライバ回路を含む多機能ICに電流遮断スイッチング素子25,32、及び電位固定用スイッチング素子29,39を設けたことにある。電流遮断スイッチ素子25および32は、プリドライバ回路14の半導体スイッチ素子20、21、35または36が接合破壊或いは絶縁破壊のために短絡故障して大電流が流れたときに、当該スイッチ素子が設けられたプリドライバ回路14に流れる電流を遮断する。これにより、大電流による溶断・焼損故障を防ぐと共に、昇圧回路5から出力される昇圧電圧または電源回路4から供給される電源電圧の低下を防ぐことができる。その結果、他のドライバ昇圧電圧または電源電圧には影響がないため、正常出力が可能となる。 The feature of the present invention is that, as shown in FIG. 1, the current interrupt switching elements 25 and 32 and the potential fixing switching elements 29 and 39 are provided in a multi-function IC including a pre-driver circuit. The current cut- off switch elements 25 and 32 are provided when the semiconductor switch element 20, 21, 35 or 36 of the pre-driver circuit 14 is short-circuited due to junction breakdown or dielectric breakdown and a large current flows. The current flowing through the pre-driver circuit 14 is cut off. As a result, fusing / burning failure due to a large current can be prevented, and the boosted voltage output from the booster circuit 5 or the power supply voltage supplied from the power supply circuit 4 can be prevented from decreasing. As a result, other driver boosted voltages or power supply voltages are not affected, and normal output is possible.
 以下、図1の電流遮断スイッチング素子25,32の実施形態について、図2~図3を参照して詳細に説明する。 Hereinafter, embodiments of the current interrupting switching elements 25 and 32 of FIG. 1 will be described in detail with reference to FIGS.
 図2は、本発明の第1の実施の形態による電流遮断制御回路11の構成例を示すブロック図である。図2に示すように、本実施形態の電流遮断制御回路11は、オペアンプ45,46、フィルタ回路47,48、論理回路14を有している。なお、ここでは電流遮断スイッチング素子25を代表例として示しているが、電流遮断スイッチング素子32も同様の構成を有している。 FIG. 2 is a block diagram showing a configuration example of the current interruption control circuit 11 according to the first embodiment of the present invention. As shown in FIG. 2, the current cutoff control circuit 11 of this embodiment includes operational amplifiers 45 and 46, filter circuits 47 and 48, and a logic circuit 14. Here, the current cutoff switching element 25 is shown as a representative example, but the current cutoff switching element 32 also has the same configuration.
 通常状態の動作は、以下のように動作する。 The normal operation is as follows.
 Hi出力の場合、ハイサイド半導体スイッチ素子27オン、ローサイド半導体スイッチ素子42をオフさせる。この時、ハイサイドプッシュプル回路19の出力をHiに、ローサイドプッシュプル回路18の出力をLoに制御する。 In the case of Hi output, the high-side semiconductor switch element 27 is turned on and the low-side semiconductor switch element 42 is turned off. At this time, the output of the high-side push-pull circuit 19 is controlled to Hi and the output of the low-side push-pull circuit 18 is controlled to Lo.
 Lo出力の場合、ハイサイド半導体スイッチ素子27オフ、ローサイド半導体スイッチ素子42をオンさせる。
この時、ハイサイドプッシュプル回路19の出力をLoに、ローサイドプッシュプル回路18の出力をHiに制御する。
In the case of Lo output, the high-side semiconductor switch element 27 is turned off and the low-side semiconductor switch element 42 is turned on.
At this time, the output of the high-side push-pull circuit 19 is controlled to Lo and the output of the low-side push-pull circuit 18 is controlled to Hi.
 異常電流が発生した場合は、短絡・開放検知回路93、94により検出される。短絡・開放検知93、94は、検出電流を検出電圧に変換してオペアンプ45、46へ出力する。この検出された電圧は、オペアンプ45、46の非反転入力側に入力される。 When an abnormal current occurs, it is detected by the short circuit / open detection circuits 93 and 94. The short-circuit / open- circuit detections 93 and 94 convert the detection current into a detection voltage and output it to the operational amplifiers 45 and 46. The detected voltage is input to the non-inverting input side of the operational amplifiers 45 and 46.
 オペアンプ45、46は、非反転入力側に入力された短絡・開放検知回路93、94からの電流検出電圧と、反転入力側に入力される基準電圧とを比較し、その比較結果に応じたコンパレータ出力をフィルタ回路47、48へ出力する。フィルタ回路47、48を通過したコンパレータ出力は、論理回路14で演算処理装置信号との論理和処理を行い、故障診断出力24を送出する。故障診断出力24が出力されることにより、異常の発生を検知することができる。検知した異常は、SPI信号により、演算処理装置10にも伝達され、異常処理がおこなわれる。 The operational amplifiers 45 and 46 compare the current detection voltage from the short-circuit / open- circuit detection circuits 93 and 94 input to the non-inverting input side with the reference voltage input to the inverting input side, and a comparator corresponding to the comparison result The output is output to the filter circuits 47 and 48. The comparator outputs that have passed through the filter circuits 47 and 48 are logically ORed with the arithmetic processing unit signal by the logic circuit 14 and send out a fault diagnosis output 24. The occurrence of an abnormality can be detected by outputting the failure diagnosis output 24. The detected abnormality is transmitted to the arithmetic processing unit 10 by the SPI signal, and abnormality processing is performed.
  故障診断出力24は、ハイサイドプッシュプル回路の電流遮断スイッチング素子25及びローサイドプッシュプル回路の電流遮断スイッチング32をオフし、昇圧回路5から昇圧電圧供給配線7を介してグランドへの貫通電流、もしくは、電源回路4からローサイドドライバ18に流れる貫通電流を遮断する。
この場合、貫通電流には、スイッチング素子20,21,35,36のソース-ドレイン間を流れる電流と、前段のプッシュプル回路22,37からスイッチング素子20,21,35,36のゲート電極を介して、ソース電極に流れ込むものとがある。これらの貫通電流を遮断するため、ハイサイドプッシュプル回路19と其の前段のプッシュプル回路の電源給電部に
電流遮断スイッチング素子25を配置、ローサイドプッシュプル回路18と其の前段のプッシュプル回路37のGND電源給電部に電流遮断スイッチング素子32を配置する。
The fault diagnosis output 24 turns off the current cutoff switching element 25 of the high-side push-pull circuit and the current cutoff switching 32 of the low-side push-pull circuit, and a through current from the booster circuit 5 to the ground via the boosted voltage supply wiring 7 The through current flowing from the power supply circuit 4 to the low-side driver 18 is cut off.
In this case, the through current includes the current flowing between the source and drain of the switching elements 20, 21, 35, and 36 and the push- pull circuits 22 and 37 of the previous stage via the gate electrodes of the switching elements 20, 21, 35 and 36. Some of them flow into the source electrode. In order to cut off these through-currents, a current cut-off switching element 25 is arranged in the power supply section of the high side push-pull circuit 19 and its preceding push-pull circuit, and the low side push-pull circuit 18 and its previous push-pull circuit 37. The current interrupting switching element 32 is disposed in the GND power supply section.
 電流遮断したハイサイド・ローサイドのプリドライバ出力が不安定にならないように、電位固定用スイッチング素子29,39をオンし、ハイサイドドライバ出力をLoに、ローサイドドライバ出力をHiに固定する。 電位 Turn on the potential fixing switching elements 29 and 39, and fix the high-side driver output to Lo and the low-side driver output to Hi so that the high-side and low-side pre-driver outputs that are cut off are not unstable.
  また、電流遮断制御回路11では、演算処理装置10から出力される演算処理装置信号によって電流遮断スイッチング素子25、32のオンオフを制御することもできる。すなわち、予め定められた電流遮断条件を満たすか否かを演算処理装置10において判断し、電流遮断条件を満たすと判断した場合は演算処理装置10から電流遮断制御回路11へ演算処理装置信号を出力することで、電源回路4からプリドライバ回路14への電流供給を強制的に遮断することができる。演算処理装置10は、ドライバ回路の異常を検出した時にも演算処理装置信号によって、電流遮断スイッチング素子25,32をオンオフ制御することができる。 Further, the current interrupt control circuit 11 can also control the on / off of the current interrupt switching elements 25 and 32 by the arithmetic processing unit signal output from the arithmetic processing unit 10. That is, it is determined in the arithmetic processing device 10 whether or not a predetermined current interruption condition is satisfied, and when it is determined that the current interruption condition is satisfied, an arithmetic processing device signal is output from the arithmetic processing device 10 to the current interruption control circuit 11. By doing so, the current supply from the power supply circuit 4 to the pre-driver circuit 14 can be forcibly cut off. The arithmetic processing unit 10 can perform on / off control of the current cutoff switching elements 25 and 32 by the arithmetic processing unit signal even when detecting an abnormality in the driver circuit.
 以上説明したようにして、電流遮断制御回路11により短絡故障時の貫通電流を遮断することにより、プリドライバ回路14におけるスイッチング素子20,21,35,36の接合/絶縁破壊による他の機能への悪影響を低減させることができる。その結果、異常が発生した場合においても当該機能以外は、安定した動作を続けることができる。 As described above, by interrupting the through current at the time of the short-circuit failure by the current interrupt control circuit 11, other functions due to the junction / dielectric breakdown of the switching elements 20, 21, 35, 36 in the pre-driver circuit 14 are achieved. Adverse effects can be reduced. As a result, even when an abnormality occurs, stable operation can be continued except for the function.
 以上説明した本発明の第1の実施の形態によれば、次の作用効果を奏する。
(1)プリドライバ機能を含む多機能半導体装置3は、ハイサイド半導体スイッチ素子27およびロウサイド半導体スイッチ素子42と、ハイサイド半導体スイッチ素子27およびロウサイド半導体スイッチ素子42の動作を制御するために設けられたプリドライバ回路14と、プリドライバ回路14へ電流を供給する電源回路4と、制御信号を演算して出力する演算処理装置10と、演算処理装置10から出力された制御信号に基づいて駆動信号を出力する論理回路15と、論理回路15から出力された駆動信号に基づいてハイサイドプッシュプル回路19,ロウサイドプッシュプル回路18の動作を制御する駆動回路22、37と、上記電流が所定値以上であることを検知する短絡・開放検知回路93,94、昇圧回路5からプリドライバ回路14への電流の供給を遮断する電流遮断スイッチング素子25、ローサイドプッシュプル回路18からGND電位への電流パスを遮断する電流遮断スイッチング素子32、短絡・開放検知回路93,94及び電流遮断制御回路11とを備える。本構成により、異常が発生した場合においても安定した動作を続けることができる多機能半導体装置3を低コストで提供することができる。
(2)プリドライバ回路14は、ハイサイド半導体スイッチ素子27に対応して設けられたハイサイドプッシュプル回路19と、ロウサイド半導体スイッチ素子42に対応して設けられたロウサイドプッシュプル回路18とを含み、電流遮断スイッチング素子25、32は、ハイサイドプッシュプル回路19およびロウサイドプッシュプル回路18双方への電流の供給を遮断し、電位固定用素子29,39をオンし、ハイサイドドライバ出力をローレベルに、ローサイドドライバ出力をハイレベルに固定するようにした。
According to the 1st Embodiment of this invention demonstrated above, there exist the following effects.
(1) The multi-function semiconductor device 3 including a pre-driver function is provided for controlling the operations of the high-side semiconductor switch element 27 and the low-side semiconductor switch element 42 and the high-side semiconductor switch element 27 and the low-side semiconductor switch element 42. The predriver circuit 14, the power supply circuit 4 that supplies current to the predriver circuit 14, the arithmetic processing device 10 that calculates and outputs a control signal, and a drive signal based on the control signal output from the arithmetic processing device 10 , The drive circuits 22 and 37 for controlling the operations of the high-side push-pull circuit 19 and the low-side push-pull circuit 18 based on the drive signal output from the logic circuit 15, and the current is a predetermined value. The short circuit / opening detection circuits 93 and 94 for detecting the above and the booster circuit 5 to pre-dry Current cut-off switching element 25 that cuts off the supply of current to circuit 14, current cut-off switching element 32 that cuts off the current path from low-side push-pull circuit 18 to the GND potential, short-circuit / open- circuit detection circuits 93 and 94, and current cut-off control circuit 11. With this configuration, it is possible to provide the multifunction semiconductor device 3 that can continue stable operation even when an abnormality occurs at a low cost.
(2) The pre-driver circuit 14 includes a high-side push-pull circuit 19 provided corresponding to the high-side semiconductor switch element 27 and a low-side push-pull circuit 18 provided corresponding to the low-side semiconductor switch element 42. Current cutoff switching elements 25 and 32 cut off the supply of current to both the high-side push-pull circuit 19 and the low-side push-pull circuit 18, turn on the potential fixing elements 29 and 39, and output the high-side driver output. Fixed low side driver output to high level.
 これにより、ハイサイド半導体スイッチ素子27およびロウサイド半導体スイッチ素子42の動作をハイサイドプッシュプル回路19およびロウサイドプッシュプル回路18によりそれぞれ適切に制御しつつ、ハイサイドプッシュプル回路19およびロウサイドプッシュプル回路18のいずれか少なくとも一方に異常が発生した場合は、その回路への電流供給を遮断し、他の機能に悪影響を与えない。 Thus, the operations of the high-side push-pull circuit 19 and the low-side push-pull circuit 18 are appropriately controlled by the high-side push-pull circuit 19 and the low-side push-pull circuit 18, respectively. When an abnormality occurs in at least one of the circuits 18, the current supply to the circuit is cut off, and other functions are not adversely affected.
 (3)電流遮断制御回路11は、電流検出回路93、94により検出された電流の大きさが所定値以上である場合、オペアンプ45、46による電圧フォロワ回路の出力電圧を変化させ、故障診断信号24を出力する。故障診断信号24は、電流遮断スイッチング素子25,32をオフさせ、電源回路4、昇圧回路5からプリドライバ回路14への電流の供給を遮断するようにした。これにより、プリドライバ回路14において発生した異常を確実に検知して電流供給を遮断することができる。 (3) The current interruption control circuit 11 changes the output voltage of the voltage follower circuit by the operational amplifiers 45 and 46 when the magnitude of the current detected by the current detection circuits 93 and 94 is equal to or greater than a predetermined value. 24 is output. The failure diagnosis signal 24 turns off the current cutoff switching elements 25 and 32 to cut off the supply of current from the power supply circuit 4 and the booster circuit 5 to the pre-driver circuit 14. Thereby, it is possible to reliably detect an abnormality occurring in the pre-driver circuit 14 and cut off the current supply.
 また、電流遮断制御回路11は、SPI(シリアルペリフェラルインタフェース)回路或るいはMSC(マイクロセカンドチャンネル)回路を通じて異常が発生したことを演算処理装置10に通知する。これにより、プリドライバ回路14において異常が発生したことをシステム全体で把握し、必要に応じてユーザへの警告等の措置を講じることができる。 Further, the current interruption control circuit 11 notifies the arithmetic processing unit 10 that an abnormality has occurred through an SPI (serial peripheral interface) circuit or an MSC (microsecond channel) circuit. As a result, it is possible for the entire system to grasp that an abnormality has occurred in the pre-driver circuit 14, and to take measures such as warning to the user as necessary.
 (4)多機能半導体装置3は、プリドライバ回路14、論理回路11、各種駆動回路51電源回路4、昇圧回路5および電流遮断制御回路11を少なくとも含む複数の回路を集積化する。これにより、モータ制御装置等の小型化および低コスト化を図ることができる。 (4) The multifunctional semiconductor device 3 integrates a plurality of circuits including at least the pre-driver circuit 14, the logic circuit 11, the various drive circuits 51, the power supply circuit 4, the booster circuit 5, and the current cutoff control circuit 11. Thereby, size reduction and cost reduction of a motor control apparatus etc. can be achieved.
 本発明の第2の実施の形態によるハイサイド半導体スイッチ素子27およびロウサイド半導体スイッチ素子42の電流遮断方法について図3を用いて説明する。 A current blocking method for the high-side semiconductor switch element 27 and the low-side semiconductor switch element 42 according to the second embodiment of the present invention will be described with reference to FIG.
 ハイサイド半導体スイッチ素子27およびロウサイド半導体スイッチ素子42に異常が発生し、過電流が流れる場合、短絡検知回路52により異常検知する。異常検知信号53は、演算処理装置10に伝達される。演算処理装置10は、電流遮断信号54を出力、昇圧ドライバ回路61を経て、ハイサイド電流源スイッチ素子28をオフさせるとともに、電流遮断制御回路11にSPI回路或るいはMSC回路を通じて演算処理装置信号55を送出する。電流遮断制御回路11は、実施例1に示したように、プリドライバ回路14の電流を遮断し、出力をローレベル/ハイレベルに固定する。 When an abnormality occurs in the high-side semiconductor switch element 27 and the low-side semiconductor switch element 42 and an overcurrent flows, the abnormality is detected by the short-circuit detection circuit 52. The abnormality detection signal 53 is transmitted to the arithmetic processing device 10. The arithmetic processing unit 10 outputs a current cutoff signal 54, turns off the high-side current source switch element 28 via the boost driver circuit 61, and causes the current cutoff control circuit 11 to output an arithmetic processing unit signal through the SPI circuit or the MSC circuit. 55 is sent out. As shown in the first embodiment, the current cutoff control circuit 11 cuts off the current of the pre-driver circuit 14 and fixes the output to low level / high level.
 マイクロコントローラとドライバICの間で行われるシリアル通信を利用して、ドライバICの診断制御を行う制御部をドライバIC内に持ち、不良発生を検知した場合、その回路を即座に非活性化するので、溶断等の重大不良発生を防止できる。そのため、高い信頼性を求められる装置に適用できる。 Using a serial communication between the microcontroller and the driver IC, the driver IC has a control unit that performs diagnostic control of the driver IC. When a failure is detected, the circuit is immediately deactivated. The occurrence of serious defects such as fusing can be prevented. Therefore, it can be applied to an apparatus that requires high reliability.
    3 半導体装置
    4 電源回路
    5 昇圧回路
    6 電源供給配線
    7 昇圧電圧供給配線
    8 バッテリ電圧
    9 グランド
  10 演算処理装置
  11 電流遮断制御回路
  12 短絡・開放検知信号
 13 短絡・開放検知信号
 14 プリドライバ回路
 18 ロウサイドプッシュプル回路
  19 ハイサイドプッシュプル回路
  20 半導体スイッチ素子
  21 半導体スイッチ素子
  22 駆動回路
  23 半導体スイッチ素子
  24 故障診断出力
  25 電流遮断スイッチング素子
  26 プリドライバ出力配線
  27 ハイサイド半導体スイッチ素子
 29 半導体スイッチ素子
 32 電流遮断スイッチング素子
 33 半導体スイッチ素子
 34 ロウサイドプッシュプル回路
  35 半導体スイッチ素子
  36 半導体スイッチ素子
  37 駆動回路
  39 半導体スイッチ素子
  41 プリドライバ出力配線
  42 ロウサイド半導体スイッチ素子
  45 オペアンプ
  46 オペアンプ
  47 フィルタ回路
  48 フィルタ回路
  49 論理回路
  51 ドライバ回路
 52 短絡検知回路
 53 短絡検知信号
 54 電流遮断信号
 55 演算処理信号
 61 昇圧ドライバ
 62 昇圧ドライバ信号
 93 短絡・開放検知回路
  94 短絡・開放検知回路
DESCRIPTION OF SYMBOLS 3 Semiconductor device 4 Power supply circuit 5 Booster circuit 6 Power supply wiring 7 Boost voltage supply wiring 8 Battery voltage 9 Ground 10 Arithmetic processing device 11 Current interruption control circuit 12 Short circuit / open detection signal 13 Short circuit / open detection signal 14 Pre-driver circuit 18 Low Side push-pull circuit 19 High-side push-pull circuit 20 Semiconductor switch element 21 Semiconductor switch element 22 Drive circuit 23 Semiconductor switch element 24 Fault diagnosis output 25 Current cut-off switching element 26 Pre-driver output wiring 27 High-side semiconductor switch element 29 Semiconductor switch element 32 Current cut-off switching element 33 Semiconductor switch element 34 Low-side push-pull circuit 35 Semiconductor switch element 36 Semiconductor switch element 37 Drive circuit 39 Semiconductor switch element 41 Pre-driver output wiring 42 Low-side semiconductor switching element 45 Op-amp 46 Op-amp 47 Filter circuit 48 Filter circuit 49 Logic circuit 51 Driver circuit 52 Short-circuit detection circuit 53 Short-circuit detection signal 54 Current cut-off signal 55 Operation processing signal 61 Boost driver 62 Boost driver signal 93 Short-circuit / open detection circuit 94 Short-circuit / open detection circuit

Claims (5)

  1.  負荷を駆動するMOSFETからなるドライバ回路と、
     その前段にあるプリドライバ回路とを備える車載制御装置であって、 
     前記プリドライバ回路は電流検知手段を具備し、
     前記プリドライバ回路が故障した際には、該当回路部の異常電流部分を遮断、かつ前記ドライバ回路の出力が非活性となるように前記プリドライバ回路の出力をLow固定またはHi固定することを特徴とする車載用電子制御装置。
    A driver circuit comprising a MOSFET for driving a load;
    An in-vehicle control device including a pre-driver circuit in the preceding stage,
    The pre-driver circuit includes current detection means,
    When the pre-driver circuit fails, the abnormal current portion of the corresponding circuit section is cut off, and the output of the pre-driver circuit is fixed to Low or Hi so that the output of the driver circuit becomes inactive. In-vehicle electronic control device.
  2.  負荷を駆動するMOSFETからなるドライバ回路と、
     その前段にあるプリドライバ回路とを備える車載制御装置であって、
     前記ドライバ回路は異常電流検知手段を具備し、
     前記ドライバ回路が故障した際には、該当回路部の異常電流部分を遮断、かつ前記ドライバ回路の出力が非活性となるように前記プリドライバ回路の出力をLow固定またはHi固定することを特徴とする車載用電子制御装置。
    A driver circuit comprising a MOSFET for driving a load;
    An in-vehicle control device including a pre-driver circuit in the preceding stage,
    The driver circuit comprises an abnormal current detection means,
    When the driver circuit fails, the abnormal current portion of the corresponding circuit unit is cut off, and the output of the pre-driver circuit is fixed to Low or Hi so that the output of the driver circuit becomes inactive. A vehicle-mounted electronic control device.
  3.  請求項1記載の車載制御装置であって、
     前記ドライバ回路は異常電流検知手段を具備し、
     前記プリドライバ回路或いは前記ドライバ回路が故障した際には、該当回路部の異常電流部分を遮断、かつ前記ドライバ回路の出力が非活性となるように前記プリドライバ回路の出力をLow固定またはHi固定することを特徴とする車載用電子制御装置。
    The in-vehicle control device according to claim 1,
    The driver circuit comprises an abnormal current detection means,
    When the pre-driver circuit or the driver circuit fails, the abnormal current portion of the corresponding circuit section is cut off, and the output of the pre-driver circuit is fixed to Low or Hi so that the output of the driver circuit becomes inactive. An in-vehicle electronic control device.
  4.  請求項1記載の車載制御装置であって、
     前記ドライバ回路は異常電流検知手段を具備し、
     前記プリドライバ回路が故障した際には、該当回路部の異常電流部分及び前段回路からの電流経路を合わせて遮断、かつ前記ドライバ回路の出力が非活性となるように前記プリドライバ回路の出力をLow固定またはHi固定することを特徴とする車載用電子制御装置。
    The in-vehicle control device according to claim 1,
    The driver circuit comprises an abnormal current detection means,
    When the pre-driver circuit fails, the abnormal current portion of the corresponding circuit section and the current path from the previous circuit are cut off together, and the output of the pre-driver circuit is set so that the output of the driver circuit is inactive. A vehicle-mounted electronic control device characterized by being fixed to Low or Hi.
  5.  請求項1記載の車載制御装置であって、
     前記プリドライバ回路、電源回路、前記ドライバ回路を1チップに集約したことを特徴とする半導体集積装置
    The in-vehicle control device according to claim 1,
    A semiconductor integrated device in which the pre-driver circuit, the power supply circuit, and the driver circuit are integrated into one chip.
PCT/JP2014/081926 2014-01-09 2014-12-03 Onboard electronic control device WO2015104921A1 (en)

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