WO2015102150A1 - Dispositif de détection, dispositif d'affichage et procédé de fabrication associé - Google Patents

Dispositif de détection, dispositif d'affichage et procédé de fabrication associé Download PDF

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Publication number
WO2015102150A1
WO2015102150A1 PCT/KR2014/001276 KR2014001276W WO2015102150A1 WO 2015102150 A1 WO2015102150 A1 WO 2015102150A1 KR 2014001276 W KR2014001276 W KR 2014001276W WO 2015102150 A1 WO2015102150 A1 WO 2015102150A1
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WIPO (PCT)
Prior art keywords
electrode
channel layer
substrate
liquid crystal
layer
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PCT/KR2014/001276
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English (en)
Korean (ko)
Inventor
김영규
김화정
남성호
박수형
서주역
Original Assignee
경북대학교 산학협력단
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Priority claimed from KR1020140017844A external-priority patent/KR101541886B1/ko
Priority claimed from KR1020140017843A external-priority patent/KR101541888B1/ko
Publication of WO2015102150A1 publication Critical patent/WO2015102150A1/fr

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix

Definitions

  • the present invention relates to a sensory device, a display device, and a method of manufacturing the same. More particularly, the present invention relates to a sensing device, a display device, and a method of manufacturing the same.
  • an electronic device such as a conventional smartphone manufactures a liquid crystal display (LCD) device for implementing an image display, for example, and then separately prepares a touch panel for sensing a user's input to form a liquid crystal. It is manufactured by a method of coupling with the display device.
  • LCD liquid crystal display
  • Such a conventional method has the disadvantage of reducing the quality and brightness of the liquid crystal display by the touch panel, increasing the thickness of the smartphone by the thickness of the touch panel, and increasing the cost and manufacturing cost of the manufacturing process.
  • Another object of the present invention is to manufacture an ultra-sensitivity sensing device at low cost.
  • Another object of the present invention is to provide a sensing device having a residual sensory function.
  • Another object of the present invention is to provide a display device capable of detecting a touch by a user.
  • Another problem to be solved by the present invention is to be able to detect the touch by the display device without manufacturing a separate touch panel.
  • a sensing device includes: a source electrode; A drain electrode spaced apart from the source electrode; A channel layer provided to electrically connect between the source electrode and the drain electrode; A gate electrode provided insulated from the channel layer; And a liquid crystal layer formed on the channel layer to be in direct contact with the channel layer.
  • the liquid crystal layer includes liquid crystal molecules whose molecular orientation changes according to physical stimulation.
  • the sensing device further includes a detector configured to detect an intensity of a physical stimulus applied on the liquid crystal layer based on a current value flowing between the drain electrode and the source electrode.
  • the sensing device further includes a protective layer formed on the liquid crystal layer.
  • a physical stimulus sensing method for detecting a physical stimulus using the sensing device, the drain electrode and the source that is changed according to the physical stimulus applied to the liquid crystal layer Detecting current values between electrodes; And sensing the physical stimulus based on the current value.
  • a substrate for solving the above problems, a substrate; A gate electrode formed on the substrate; An insulating layer formed on the gate electrode; A channel layer formed on the insulating layer; A source electrode and a drain electrode electrically connected to the channel layer; A liquid crystal layer formed to directly contact an upper surface of the channel layer; And a protective layer formed on the liquid crystal layer.
  • a substrate for solving the above problems, a substrate; Source and drain electrodes spaced apart from each other on the substrate; A channel layer formed on the substrate to be electrically connected to the source electrode and the drain electrode; An insulating layer formed on the first region of the channel layer; A gate electrode formed on the insulating layer; A liquid crystal layer formed on the second region of the channel layer and formed in direct contact with an upper surface of the channel layer; And a protective layer formed on the liquid crystal layer.
  • a gate electrode on the substrate; Forming an insulating layer on the gate electrode; Forming a source electrode and a drain electrode on the insulating layer; Forming a channel layer on the insulating layer to be electrically connected to the source electrode and the drain electrode; Forming a liquid crystal layer in direct contact with an upper surface of the channel layer; And forming a protective layer on the liquid crystal layer.
  • a display element in which light emission is controlled by an electric field; One or more electrodes provided to apply the electric field to the display element; And a sensing device provided to sense a contact with the display element from the outside, the sensing device comprising: a source electrode; A drain electrode spaced apart from the source electrode; A channel layer provided to electrically connect between the source electrode and the drain electrode; A gate electrode provided insulated from the channel layer; And a liquid crystal layer formed on the channel layer to be in direct contact with the channel layer.
  • a plurality of pixels that emit light by an electric field, each of the plurality of pixels, the electrode provided on the substrate; And a driving transistor for providing a driving signal to the electrode to form the electric field in a region on the substrate corresponding to each pixel, wherein at least one pixel of the plurality of pixels is in contact with a corresponding pixel from the outside.
  • a sensing device provided on the substrate, the sensing device comprising: a source electrode; A drain electrode spaced apart from the source electrode; A channel layer provided to electrically connect between the source electrode and the drain electrode; A gate electrode provided insulated from the channel layer; And a liquid crystal layer formed on the channel layer to be in direct contact with the channel layer.
  • the molecular orientation of the liquid crystal is changed by an electric field is provided with a plurality of pixels to emit light, each of the plurality of pixels, the first is provided on the substrate electrode; And a driving transistor configured to provide a driving signal to the first electrode to form the electric field in a liquid crystal region corresponding to each pixel, wherein at least one pixel of the plurality of pixels is configured to correspond to a corresponding pixel from the outside.
  • a sensing device provided on the substrate to sense a contact, the sensing device comprising: a source electrode; A drain electrode spaced apart from the source electrode; A channel layer provided to electrically connect between the source electrode and the drain electrode; A gate electrode provided insulated from the channel layer; And a liquid crystal layer formed on the channel layer to be in direct contact with the channel layer.
  • a substrate An electrode provided on the substrate;
  • a driving transistor provided on the substrate and providing a driving signal corresponding to the data signal for determining light emission of the pixel to the electrode;
  • a channel layer provided on the substrate to sense a contact from the outside, the channel layer electrically connecting the source electrode, the drain electrode spaced apart from the source electrode, and the source electrode and the drain electrode to be insulated from the channel layer.
  • a display device driving substrate includes a sensing device including a gate electrode and a liquid crystal layer formed on the channel layer to be in direct contact with the channel layer.
  • a substrate An electrode provided on the substrate; A first electrode provided on the substrate and to which a data signal for determining light emission of a pixel is applied, a first channel layer electrically connected to the first electrode, and electrically connected to the first channel layer and connected to the data signal
  • a driving transistor including a second electrode for providing a corresponding driving signal to the electrode, a third electrode insulated from the first electrode, the second electrode, and the first channel layer and to which a first gate signal is applied;
  • a data line provided on the substrate to apply the data signal to the first electrode;
  • a channel layer provided on the substrate to sense a contact from the outside and provided to electrically connect a source electrode, a drain electrode spaced from the source electrode, and an electrical connection between the source electrode and the drain electrode, the channel layer being insulated from the channel layer
  • a sensing device comprising a gate electrode provided and a liquid crystal layer formed on the channel layer to be in direct contact with
  • a drive substrate for providing a drive signal; A color filter substrate disposed to face the driving substrate; And a liquid crystal unit provided between the driving substrate and the color filter substrate and including a liquid crystal whose molecular orientation is changed by an electric field according to the driving signal
  • the driving substrate comprises: a first substrate; A first electrode provided for each pixel on the first substrate; And a driving transistor provided on each of the pixels on the first substrate and providing a driving signal corresponding to a data signal for determining light emission of the pixel to the first electrode
  • the color filter substrate includes: a first substrate; A second substrate disposed to face the second substrate; A black matrix formed on the second substrate in a lattice form along a boundary between pixels; A color filter provided between the grids of the black matrix for each pixel; A second electrode provided on the second substrate to apply a common signal to the liquid crystal, wherein the liquid crystal display includes a sensing provided to the driving substrate or the color filter substrate to sense a contact from the
  • a substrate A driving transistor formed on the substrate; An electroluminescent element electrically connected to the driving transistor and generating light according to a driving signal from the driving transistor; And a channel layer formed on the substrate to sense a contact from the outside, the channel layer electrically connecting the source electrode, the drain electrode spaced from the source electrode, and the source electrode and the drain electrode to be insulated from the channel layer.
  • An electroluminescent display device comprising a sensing device comprising a gate electrode and a liquid crystal layer formed to be in direct contact with the channel layer on the channel layer.
  • a substrate for solving the above problems, a substrate; A first electrode provided on the substrate; An organic emission layer provided on the first electrode and including an organic material generating light by an electric field; A second electrode provided on the organic light emitting layer; And a sensing device formed on the substrate to sense physical contact from the outside, the sensing device comprising: a source electrode; A drain electrode spaced apart from the source electrode; A channel layer electrically connecting the source electrode and the drain electrode; A gate electrode provided insulated from the channel layer; And a liquid crystal layer formed on the channel layer to be in direct contact with the channel layer.
  • forming a driving transistor on a substrate Forming a sensing device on the substrate to sense a contact from the outside; And forming an electrode on the driving transistor to receive a driving signal for emission control from the driving transistor, wherein forming the sensing device comprises: forming a source electrode and a drain electrode on the substrate; step; Forming a channel layer to be electrically connected between the source electrode and the drain electrode; Forming a gate electrode to be insulated from the channel layer; And forming a liquid crystal layer in direct contact with the channel layer on the channel layer.
  • the forming of the driving transistor and the forming of the sensing device are performed simultaneously.
  • forming a driving transistor on a substrate Forming a sensing device on the substrate to sense a contact from the outside; And forming an electrode on the driving transistor to receive a driving signal for emission control from the driving transistor
  • forming the driving transistor comprises: a first gate electrode and the first gate on the substrate; Forming a first gate line for applying a gate signal to the gate electrode; Forming a first electrode, a second electrode spaced apart from the first electrode, and a data line to apply a data signal to the first electrode on the substrate; And forming a first channel layer on the substrate, the first channel layer electrically connecting between the first electrode and the second electrode
  • forming the sensing device comprises: a second gate electrode on the substrate; Forming a second gate line for applying a gate signal to the second gate electrode; Forming a source electrode, a drain electrode, a source line for applying a source signal to the source electrode, and a drain line for applying a drain signal to the drain electrode on the
  • forming a first electrode on a substrate Forming an organic emission layer on the first electrode, the organic emission layer including an organic material that generates light by an electric field; Forming a second electrode on the organic light emitting layer; And forming a sensing device on the substrate to sense a contact from the outside, wherein forming the sensing device comprises: forming a source electrode and a drain electrode on the substrate; Forming a channel layer to electrically connect between the source electrode and the drain electrode; Forming a gate electrode to be insulated from the channel layer; And forming a liquid crystal layer in direct contact with the channel layer on the channel layer.
  • a sensing device capable of sensing a minute physical stimulus.
  • a sensing device having a residual sensory function is provided.
  • a touch of a user may be sensed by the display device without manufacturing a separate touch panel.
  • FIG. 1 is a cross-sectional view illustrating a sensing device according to an embodiment of the present invention.
  • FIGS. 2A to 2D are cross-sectional views illustrating a method of manufacturing a sensing device according to an embodiment of the present invention.
  • 3A to 3B are diagrams for describing an operating principle of a sensing device according to an embodiment of the present invention.
  • FIG. 4 is a cross-sectional view illustrating a sensing device according to another exemplary embodiment of the present disclosure.
  • FIG. 5 is a cross-sectional view illustrating a sensing device according to another exemplary embodiment of the present invention.
  • FIG. 6 illustrates a drain current I D while changing a drain voltage V D for each gate voltage V G in a state in which nitrogen gas is not applied to an organic field effect transistor according to a comparative example without a liquid crystal layer. This graph shows the result of measuring a value.
  • FIG. 7 is a graph illustrating a drain voltage V D for each gate voltage V G in a state in which nitrogen gas is not applied to a liquid crystal-organic field effect transistor according to an exemplary embodiment of the present invention having a liquid crystal layer on a channel layer.
  • the graph shows the result of measuring the drain current (I D ) accordingly.
  • FIGS. 8 to 10 are graphs illustrating the comparison of the drain current I D while changing the drain voltage V D according to the embodiment of the present invention and the comparative example for each gate voltage V G.
  • FIG. 11 is a cross-sectional view illustrating an organic field effect transistor without forming a liquid crystal layer.
  • FIG. 12 is a view for explaining the mechanism of the sensing device according to an embodiment of the present invention.
  • FIG. 13 is a graph showing a change in drain current with time for each contact time of nitrogen gas when nitrogen gas is contacted with the sensing device according to an exemplary embodiment of the present invention.
  • FIG. 14 is a graph illustrating a change amount of drain current according to a gas contact time when nitrogen gas is contacted with a sensing device according to an exemplary embodiment of the present invention.
  • 15 is a graph showing a delay time for each gas contact time when nitrogen gas is contacted with a sensing device according to an exemplary embodiment of the present invention.
  • 16 is a graph illustrating an increase time constant and a decrease time constant for each gas contact time when nitrogen gas is contacted with a sensing device according to an exemplary embodiment of the present disclosure.
  • 17 is a graph illustrating a change in drain current value with time for each gas flow rate when nitrogen gas is applied to a sensing device according to an exemplary embodiment of the present invention.
  • FIG. 18 is a graph showing a change amount of drain current for each gas intensity when nitrogen gas is applied to a sensing device according to an exemplary embodiment of the present invention.
  • 19 is a graph showing delay times for each gas flow rate when nitrogen gas is contacted with a sensing device according to an exemplary embodiment of the present invention.
  • 20 is a graph illustrating an increase time constant and a decrease time constant for each gas flow rate when nitrogen gas is contacted with a sensing device according to an exemplary embodiment of the present disclosure.
  • FIG. 21 is a view showing the results of observing the arrangement of the liquid crystal molecules in the channel region by optical micrographs in an in-situ measurement method while the nitrogen gas is in contact with the sensing device according to an embodiment of the present invention.
  • 22 to 23 are views for explaining the mechanism of the sensing device according to an embodiment of the present invention.
  • FIG. 24 is a cross-sectional view illustrating a sensing device according to another embodiment of the present invention.
  • FIG. 25 is a graph illustrating a change in drain current with time for each gas rate when nitrogen gas is applied to the sensing device according to the exemplary embodiment shown in FIG. 24.
  • 26 is a cross-sectional view illustrating a sensing device according to a modified embodiment of the present invention.
  • FIG. 27 is a plan view schematically illustrating a display device according to an exemplary embodiment.
  • FIG. 28 is a cross-sectional view illustrating one pixel of the display device illustrated in FIG. 27.
  • FIG. 29 is a plan view illustrating a driving substrate configuring the display device illustrated in FIG. 28.
  • FIG. 30 is a schematic circuit diagram of the liquid crystal display shown in FIG. 28.
  • 31 to 33 are plan views illustrating a method of manufacturing a display device according to an exemplary embodiment.
  • FIG. 34 is a cross-sectional view illustrating a display device according to another exemplary embodiment.
  • 35 is a circuit diagram schematically illustrating a display device according to another exemplary embodiment of the present invention.
  • the configuration A is formed on the configuration 'phase B', as well as A is formed so as to be in direct contact with the top surface of B without any other material interposed, as well as one or a plurality of other materials interposed between A and B It may mean that it is formed to remain.
  • Sensing device is a substrate; A gate electrode formed on the substrate; An insulating layer formed on the gate electrode; A channel layer formed on the insulating layer; A source electrode and a drain electrode electrically connected to the channel layer; And a liquid crystal layer formed to be in direct contact with the channel layer.
  • the fine physical stimulus can be detected from the change of the drain current value flowing in the channel layer according to the change in the molecular orientation of the liquid crystal layer according to the physical stimulus (contact).
  • the sensing device may detect various physical stimuli such as a small gas contact, a user's touch input, and a pressure. After the drain current value is increased by the physical stimulus, the drain current value of the sensing device can be maintained for a certain time even when the physical stimulus is stopped.
  • the sensing device according to an embodiment of the present invention may be applied to an artificial sensory skin such as a humanoid robot, and may implement a residual sensory function.
  • the sensing device may be provided in a display device in a smart phone or the like to detect a user's touch input by replacing an existing touch panel. Therefore, since a separate touch panel is not required in addition to the display device, a process of manufacturing the touch panel and a process of combining the touch panel with the display device are omitted, thereby reducing manufacturing cost and product cost. In addition, it is possible to prevent deterioration in image quality and brightness of the liquid crystal display by the touch panel, and to reduce the thickness of the smartphone by the thickness of the touch panel.
  • the sensing device 100 may include a substrate 110, a gate electrode 120, an insulating layer 130, a source electrode 140, a drain electrode 150, and a channel.
  • the layer 160 and the liquid crystal layer 170 are included.
  • the substrate 110 may be provided as a silicon substrate, a glass substrate, or a plastic substrate.
  • the plastic substrate may be formed of a polymer compound such as polyimide, polyethylenenaphthalate, polyethylene terephthalate, or the like.
  • the gate electrode 120 may be formed on the substrate 110.
  • the gate electrode 120 may be formed of a conductive material.
  • the gate electrode 120 may be formed of a metal material such as aluminum (Al), chromium (Cr), molybdenum (Mo), copper (Cu), titanium (Ti), tantalum (Ta), or indium-tin.
  • Conductive metal such as an oxide, a transparent electrode such as tungsten sulfide, or the like.
  • the gate electrode 120 may be formed to be insulated from the source electrode 140, the drain electrode 150, and the channel layer 160.
  • the insulating layer 130 may be formed on the substrate 110 and the gate electrode 120.
  • the insulating layer 130 may be formed to cover the gate electrode 120 on the substrate 110.
  • Insulating layer 130 is, for example, methyl methacrylate (poly methacrylate), polyimide (polyimide), polyvinyl alcohol (polyvinylalcohol), a material such as polystyrene (polystyrene), or aluminum oxide / polystyrene (Al 2 O 3 It may be formed of a hybrid insulating material of inorganic / organic substances such as / PS).
  • the source electrode 140 and the drain electrode 150 may be formed on the substrate 110 and the insulating layer 130.
  • the source electrode 140 and the drain electrode 150 may be formed to be spaced apart from each other.
  • the source electrode 140 and the drain electrode 150 may include a conductive material.
  • the source electrode 140 and the drain electrode 150 may include a metal, a metal compound, or a conductive organic polymer.
  • the source electrode 140 and the drain electrode 150 may include gold (Au), silver (Ag), zinc (Zn), copper (Cu), aluminum (Al), nickel (Ni), and indium tin oxide ( ITO), a carbon nanotube, a conductive material such as a polymer, a paste or ink, or a transparent electrode such as tungsten sulfide.
  • the channel layer 160 may be formed on the insulating layer 130.
  • the channel layer 160 may be formed to electrically connect the source electrode 140 and the drain electrode 150. Accordingly, the channel layer 160 is formed between the source electrode 140 and the drain electrode 150, and the source electrode 140 and the drain electrode 150 are electrically connected to the channel layer 160.
  • the channel region may be formed in the channel layer 160 by the voltage formed between the source electrode 140 and the drain electrode 150.
  • the source electrode 140 and the drain electrode 150 may be formed to directly contact the channel layer 160, or may be indirectly connected to the channel layer 160 via one or more other materials having conductivity.
  • the channel layer 160 may cover the source electrode 140 and the drain electrode 150. When a voltage is applied between the source electrode 140 and the drain electrode 150, a channel may be formed in the channel layer 160.
  • the channel layer 160 may include an organic semiconductor layer, an inorganic semiconductor layer, or an organic-inorganic mixed semiconductor layer.
  • the organic semiconductor layer may include a polymer active layer. The bending of the channel layer 160 to an organic semiconductor layer having flexibility and flexibility is suitable for implementing the sensing device 100 according to an embodiment of the present invention as an artificial sensory skin of a humanoid robot.
  • the organic semiconductor layer may include poly-3-hexylthiopine (P3HT, (poly (3-hexylthiophene))), pentacene, tetracene, tetratracene, anthracene, naphthalene, Rubrene, coronene, perylene, rubrene, phthalocyanine or derivatives thereof, conjugated polymer derivatives including thiophene, poly-9, 9-dioctylfluorineco-bithiopine (F8T2, (poly (9,9-dioctylfluoreneco-bithiophene))), poly-3,3-didodecylquater-thiopine (PQT-12, (poly 3-didodecylquarter-thiophene))) or poly-2,5-bis-3-tetraethylthiopin-2-yl-thieno-3,2-b-thiopine (PBTTT)
  • the liquid crystal layer 170 may be formed on the channel layer 160 to be in direct contact with the channel layer 160. That is, the liquid crystal layer 170 and the channel layer 160 are formed as layers separated from each other, and the liquid crystal layer 170 directly contacts the upper surface of the channel layer 160.
  • the liquid crystal layer 170 may include liquid crystal (LC) molecules whose molecular orientation changes according to physical stimulation applied to the surface thereof.
  • the physical stimulus may be a stimulus applied to the surface of the liquid crystal layer 170, for example, gas flow contact, touch input, pressure, or other stimulus.
  • the liquid crystal layer 170 may include, for example, nematic liquid crystal molecules or cholesteric liquid crystal molecules.
  • the liquid crystal layer 170 is, for example, 1-trans-4-hexylcyclohexyl-4-isothiocyanatobenzene (1- (trans-4-hexylcyclohexyl) -4-isothiocyanatobenzene), 4'-octyl- 4-biphenylcarbonitrile (4'-octyl-4-biphenylcarbonitrile), 4'-hexyloxy-4-biphenylcarbonitrile (4 '-(hexyloxy) -4-biphenylcarbonitrile), 4-trans-4-pentyl Cyclohexylbenzonitrile (4- (trans-4-pentylcyclohexyl) benzonitrile), 1-trans-4-hexylcyclohexyl-4-isothiocyanatobenzene (1- (trans-4-hexylcyclohexyl) -4-isothiocyanatobenzene ), 4-heptyloxybenzoic
  • the sensing device 100 may further include a detector (not shown) that detects the strength of the physical stimulus based on the drain current value.
  • the detector detects a drain current value that changes according to a physical stimulus applied to the surface of the liquid crystal layer 170, and detects a physical stimulus based on the detected current value.
  • the value of the current (hereinafter, referred to as a 'drain current') flowing between the drain electrode 150 and the source electrode 140 through the channel layer 160 may vary depending on the strength of the physical stimulus.
  • the induced charge density of the channel layer 160 may change according to the molecular orientation change of the liquid crystal layer 170 due to physical stimulation.
  • the sensing device 100 may detect the strength of the physical stimulus, the duration of the physical stimulus, or the like based on a change amount of the drain current value, a change rate per unit time, and the like. In this case, for accurate measurement, the voltage between the drain electrode 150 and the source electrode 140 and the voltage between the drain electrode 150 and the gate electrode 120 may be maintained at a preset value.
  • Sensing device 100 through the collective behavior of the liquid crystal molecules of the liquid crystal layer 170 by physical stimulation, and the change of the drain current according to the synergy effect between the channel layer 160, Physical stimuli can be detected.
  • the sensing device 100 may detect a physical stimulus greater than 0 (sccm) and less than 2 (sccm).
  • the physical stimulus of 2 (sccm) or less is the minimum stimulus intensity that humans can feel or the microstimulation intensity that humans cannot feel depending on individual deviation.
  • the sensing device 100 may detect a physical stimulus greater than 0 (sccm) and less than 0.7 (sccm).
  • Liquid crystal molecules have a strong dipole orientation in the liquid crystal state and exhibit collective molecular movement behavior with respect to physical stimuli.
  • a minute physical stimulus is applied to the surface of the liquid crystal layer 170, the molecular orientation of the liquid crystal molecules of the liquid crystal layer 170 changes collectively, and due to the strong dipole effect and the change of the molecular orientation of the liquid crystal molecules, The drain current of the channel layer 160 is sensitively changed according to the intensity.
  • a gate electrode 120 is formed on a substrate 110.
  • the gate electrode 120 may be formed of a conductive material.
  • the gate electrode 120 is formed by forming a conductive film (not shown) on the substrate 110 or by patterning a conductive film (not shown), or by covering the substrate 110 with a patterned mask and covering the conductive film. It can form by the method of forming.
  • the gate electrode 120 is illustratively a process such as thermal evaporation, E-beam evaporation, sputtering, micro contact printing or nano imprinting. It can be formed by.
  • the gate electrode 120 may be formed of a metallic material such as aluminum (Al), chromium (Cr), molybdenum (Mo), copper (Cu), titanium (Ti), tantalum (Ta), or may be conductive. It may be formed of a nonmetallic material such as indium tin oxide or the like.
  • an insulating layer 130 is formed on the substrate 110 and the gate electrode 120.
  • the insulating layer 130 is formed on the substrate 110 to cover the gate electrode 120.
  • the insulating layer 130 is formed by forming an insulating material by spin coating or dispensing using a dispenser, followed by heat curing or ultraviolet curing. curing) by a method such as curing).
  • Insulating layer 130 is, for example, methyl methacrylate (poly methacrylate), polyimide (polyimide), polyvinyl alcohol (polyvinylalcohol), a material such as polystyrene (polystyrene), or aluminum oxide / polystyrene (Al 2 O 3 It may be formed of a hybrid insulating material of inorganic / organic substances such as / PS).
  • a source electrode 140 and a drain electrode 150 are formed on the insulating layer 130.
  • the source electrode 140 and the drain electrode 150 may be formed to be spaced apart from each other.
  • the source electrode 140 and the drain electrode 150 may include a conductive material.
  • the source electrode 140 and the drain electrode 150 may include a metal, a metal compound, or a conductive organic polymer.
  • the source electrode 140 and the drain electrode 150 may include gold (Au), silver (Ag), zinc (Zn), copper (Cu), aluminum (Al), nickel (Ni), and indium tin oxide ( ITO), carbon nanotubes, and conductive materials such as polymers, pastes or inks.
  • the channel layer 160 is formed on the insulating layer 130. Accordingly, the channel layer 160 is formed between the source electrode 140 and the drain electrode 150, and the source electrode 140 and the drain electrode 150 are electrically connected to the channel layer 160.
  • the channel region may be formed in the channel layer 160 by the voltage formed between the source electrode 140 and the drain electrode 150.
  • the source electrode 140 and the drain electrode 150 may be formed to directly contact the channel layer 160, or may be indirectly connected to the channel layer 160 via one or more other materials having conductivity.
  • the channel layer 160 may cover the source electrode 140 and the drain electrode 150. When a voltage is applied between the source electrode 140 and the drain electrode 150, a channel may be formed in the channel layer 160.
  • the channel layer 160 may be formed through a process such as spin coating, inkjet printing, or vacuum deposition.
  • the channel layer 160 may include an organic semiconductor layer, an inorganic semiconductor layer, or an organic-inorganic mixed semiconductor layer.
  • the organic semiconductor layer may include a polymer active layer. The bending of the channel layer 160 to an organic semiconductor layer having flexibility and flexibility is suitable for implementing the sensing device 100 according to an embodiment of the present invention as an artificial sensory skin of a humanoid robot.
  • the organic semiconductor layer may include poly-3-hexylthiopine (P3HT, (poly (3-hexylthiophene))), pentacene, tetracene, tetratracene, anthracene, naphthalene, Rubrene, coronene, perylene, rubrene, phthalocyanine or derivatives thereof, conjugated polymer derivatives including thiophene, poly-9, 9-dioctylfluorineco-bithiopine (F8T2, (poly (9,9-dioctylfluoreneco-bithiophene))), poly-3,3-didodecylquater-thiopine (PQT-12, (poly 3-didodecylquarter-thiophene))) or poly-2,5-bis-3-tetraethylthiopin-2-yl-thieno-3,2-b-thiopine (PBTTT)
  • the liquid crystal layer 170 is formed on the channel layer 160.
  • the liquid crystal layer 170 and the channel layer 160 are formed as layers separated from each other, and the liquid crystal layer 170 directly contacts the upper surface of the channel layer 160.
  • the liquid crystal layer 170 may include liquid crystal (LC) molecules whose molecular orientation changes according to physical stimulation applied to the surface thereof.
  • the physical stimulus may be a stimulus applied to the surface of the liquid crystal layer 170, for example, gas flow contact, touch input, pressure, or other stimulus.
  • the liquid crystal layer 170 may include, for example, nematic liquid crystal molecules or cholesteric liquid crystal molecules.
  • the liquid crystal layer 170 is, for example, 1-trans-4-hexylcyclohexyl-4-isothiocyanatobenzene (1- (trans-4-hexylcyclohexyl) -4-isothiocyanatobenzene), 4'-octyl- 4-biphenylcarbonitrile (4'-octyl-4-biphenylcarbonitrile), 4'-hexyloxy-4-biphenylcarbonitrile (4 '-(hexyloxy) -4-biphenylcarbonitrile), 4-trans-4-pentyl Cyclohexylbenzonitrile (4- (trans-4-pentylcyclohexyl) benzonitrile), 1-trans-4-hexylcyclohexyl-4-isothiocyanatobenzene (1- (trans-4-hexylcyclohexyl) -4-isothiocyanatobenzene ), 4-heptyloxybenzoic
  • 3A to 3B are diagrams for describing an operating principle of a sensing device according to an embodiment of the present invention.
  • the liquid crystal molecules of the liquid crystal layer 170 may be connected to the source electrode 140.
  • the dipole (+,-) arrangement is performed in the direction of the drain electrode 150. Due to the strong dipole effect of the liquid crystal molecules arranged in the lower layer portion 171 of the liquid crystal layer 170, the charge induction region 161 of the channel layer 160, that is, the channel layer 160 in contact with the liquid crystal layer 170, may be formed. Inductive charges are generated in the upper layer.
  • the molecular arrangement of the liquid crystal layer 170 that is, the dipole (+,-) direction is changed, thereby changing the induced charge density of the channel layer 160.
  • the physical stimulus can be detected. That is, when the physical stimulus is applied to the surface of the liquid crystal layer 170, as shown by the arrow of FIG. Due to the dipole rearrangement effect, the liquid crystal orientation changes collectively in a plurality of adjacent liquid crystal molecules along the stimulated liquid crystal molecules.
  • the molecular orientation of the liquid crystal molecules collectively changes over the entire region 172 between the upper layer portion of the liquid crystal layer 170 and the lower layer portion of the liquid crystal layer 170 in contact with the channel layer 160. Then, the density of charge induced in the channel layer 160 by the strong dipoles of the liquid crystal molecules changes due to the change in the orientation of the liquid crystal molecules. As a result, the induced charge density of the channel layer 160 changes and at the same time, a wider charge induction region 162 is formed than before the physical stimulus is applied, thus drain current flowing between the source electrode 140 and the drain electrode 150. Increases.
  • the liquid crystal molecules of the liquid crystal layer 170 act as a sensitizer for physical stimulation, and the channel layer 160 functions to generate / amplify an electrical signal caused by a change in orientation of the liquid crystal molecules.
  • the drain current of the sensing device 100 increases.
  • additional charge transfer is formed in the channel layer 160 as the molecular orientation of the liquid crystal layer 170 is collectively changed by the physical stimulus applied to the surface of the liquid crystal layer 170, thereby restoring the liquid crystal molecular orientation. Because of this, even after stopping the physical stimulus, the drain current value does not decrease for a certain period of time and shows similar characteristics to the residual sense of human.
  • the drain current is greater than that when the liquid crystal layer 170 is not formed. Increases significantly.
  • the drain current value increases even when the liquid crystal layer 170 is not formed even when the gate voltage is 0 (V).
  • the liquid crystal layer 170 induces positive charge in the channel layer 160 due to strong dipole moments of the liquid crystal molecules. In the case of having only the liquid crystal layer 170 without the channel layer 160, this characteristic does not appear. This is because the liquid crystal molecules do not move charges by themselves.
  • the liquid crystal molecules on the surface of the channel layer 160 and the region induced by the liquid crystal in the channel layer 160 are affected by the voltage between the source electrode 140 and the drain electrode 150, and the drain current is applied to the gate voltage. Strongly influenced by Therefore, the voltage range between the source electrode 140 and the drain electrode 150 and the voltage between the gate electrode 120 and the source electrode 140 may be adjusted to adjust the intensity range of the physical stimulus to be detected.
  • a large area of artificial sensory skin can be formed.
  • the same drain voltage (drain-source voltage) and gate voltage (gate-source voltage) may be applied to each sensing device 100.
  • different drain voltages or different gate voltages may be applied to different sensing devices 100 to detect different physical stimuli for each region.
  • the channel layer 160 may be formed in a region between the source electrode 140 and the drain electrode 150.
  • the upper surface of the channel layer 160 may be lower than the upper surfaces of the source electrode 140 and the drain electrode 150, and may be higher than the lower surfaces of the source electrode 140 and the drain electrode 150. That is, the top surface of the channel layer 160 may be located between the top and bottom heights of the source electrode 140 and the drain electrode 150.
  • the upper layer portion of the channel layer 160 may be located in the channel region between the source electrode 140 and the drain electrode 150. If the upper portion of the channel layer 160 is formed in the channel region between the source electrode 140 and the drain electrode 150, the variation in the drain current value according to the physical stimulus will increase. As such, the sensing device 100 can sense the physical stimulus more sensitively.
  • FIG. 5 is a cross-sectional view showing a sensing device according to another embodiment of the present invention.
  • overlapping descriptions of elements that are the same as or corresponding to those illustrated in FIGS. 1 and 4 may be omitted.
  • a portion of the upper surface of the channel layer 160 that is, the upper surface of the center side of the channel layer 160, based on a direction connecting the source electrode 140 and the drain electrode 150 to each other.
  • the silver may be positioned between the top and bottom heights of the source electrode 140 and the drain electrode 150, and the top and right sides of the channel layer 160 may be formed to cover the source electrode 140 and the drain electrode 150.
  • Forming a 12 mm ⁇ 1 mm gate electrode 120 on the substrate 110 by patterning an indium-tin oxide coated glass substrate, followed by acetone and isopropyl It was washed with alcohol (isopropyl alcohol).
  • the patterned ITO glass substrate was treated with ultraviolet-ozone for 28 minutes at 28 mW / cm 2 intensity, and polymethyl methacrylate (PMMA, average molecular weight 120 kDa, polydispersity index) was placed on top of the ITO glass substrate.
  • PMMA polymethyl methacrylate
  • Sigma-Aldrich layer was spin-coated to a thickness of 450nm, and then soft-baked at 90 ° C. for 60 minutes to form an insulating layer 130.
  • the source electrode 140 and the drain electrode 150 were then deposited with silver (Ag) on the PMMA layer through a shadow mask using resistive evaporation techniques in a vacuum chamber. After the silver deposited substrate was removed from the vacuum chamber, spin-coated a layer of poly-3-hexylthiopine (P3HT polymer, average molecular weight 70kDa, polydispersity index 1.8, regioregularity 96%, Rieke Metals), 60 The channel layer 160 was formed by soft baking at a temperature of 15 ° C. for 15 minutes.
  • P3HT polymer poly-3-hexylthiopine
  • 4-cyano-4'-pentylbiphenyl (5CB, 4-cyano-4'-pentylbiphenyl) (98% purity, Sigma-Aldrich) layer is formed on the P3HT layer to form the liquid crystal layer 170.
  • LC-OFET liquid crystal organic field effect transistor
  • Example 1 Comparative Example 2
  • Transistor characteristics were measured using a semiconductor parameter analyzer (semiconductor parameter analyzer) (4200CS, Keithley).
  • Probe station PS-CPSN2, MODU-SYSTEMS
  • polarized optical microscope unit FPG-30.2-4.3, CVI Melles-Griot
  • micro gas control unit The liquid crystal-organic field effect transistor sensing device is installed in a specialized tactile sensor measurement system equipped with (TSC-210, NF System) and an external controller (KRO-4000S, NF System). The drain current was measured and the optical photograph etc. were observed.
  • FIG. 6 illustrates a change in drain voltage V D for each gate voltage V G in a state in which nitrogen gas is not applied to an organic field effect transistor according to Comparative Example 1 (Comparative Example 1) in which a liquid crystal layer is not formed on a channel layer.
  • This is a graph showing the result of measuring the drain current (I D ) accordingly.
  • the organic field effect transistor having no liquid crystal layer formed on the channel layer has a drain current I D value of a conventional transistor as shown in FIG. 6.
  • Figure 7 is a liquid crystal according to an embodiment of the present invention by varying the drain voltage (V D) by the gate voltage (V G) in a state not applied with the nitrogen gas to the organic field effect transistor sensing device the drain current (I accordingly D ) It is a graph showing the result of measuring the value. As shown in FIG. 7, in the embodiment of the present invention in which the liquid crystal layer 170 is formed on the surface of the channel layer 160, the liquid crystal layer is not formed on the channel layer (see FIG. 6). Drain current (I D ) value is drastically increased by several to several tens of times.
  • FIG. 8 to 10 illustrate the results of measuring the drain current I D while changing the drain voltage V D with respect to the embodiment of the present invention and the comparative example (Comparative Example 1) for each gate voltage V G.
  • FIG. 9 is a measurement result when the gate voltage V G is -24 (V)
  • FIG. 10 is a gate voltage.
  • the graph shown by the solid line is the result of measuring the drain current (I D ) value for the embodiment of the present invention
  • the graph shown by the dotted line is the drain current for the comparative example (Comparative Example 1) It is the result of measuring (I D ) value.
  • the sensing device according to the embodiment of the present invention is compared to the comparative example (Comparative Example 1) in which all liquid crystal layers are not formed on the channel layer in the case of all gate voltages V G.
  • the magnitude of the drain current I D value measured for the sensing device according to the embodiment of the present invention is larger than that of the comparative example. It can be seen that the increase significantly.
  • the embodiment of the present invention when the gate voltage V G is 0 (V), while the drain voltage V D is changed from 0 (V) to -12 (V), the drain current ( whereas inde I D) variation is 0.1 ( ⁇ A) below the level of, the embodiment of the present invention the amount of change in drain current (I D) 0.5 ( ⁇ A) degree, the embodiment of the invention, at least 5 times higher than that of Comparative example This increases the drain current value.
  • the drain current in the case of Comparative Example 1 While the amount of change in (I D ) is less than 0.5 ( ⁇ A), in the case of the embodiment of the present invention, the amount of change in the drain current (I D ) is about 15 ( ⁇ A). In comparison, the magnitude of the drain current value is more than 30 times increased.
  • the drain current I in the comparative example While the amount of change in D ) is less than 0.5 (kV), the amount of change in the drain current (I D ) is about 20 (kPa) in the case of the embodiment of the present invention.
  • the magnitude of the abnormal drain current value greatly increases. This is because, as shown in FIG. 12, positive charges are induced in the upper layer of the channel layer 160 due to strong dipole moments of the liquid crystal molecules constituting the liquid crystal layer 170.
  • the drain current variation characteristic as in the embodiment of the present invention does not appear. This is because liquid crystal molecules can measure extremely small levels of resistance current for most dielectric materials, such as the resistance of electrical circuits, but cannot cause charge transfer on the liquid crystal layer itself.
  • the drain current I D is strongly influenced by the change of the gate voltage V G.
  • LCD according to the embodiment of the present invention the organic field effect transistor sensing device 100 is sensitive to motion to a change in gate voltage (V G) and the drain current by changing the gate voltage (V G), (I D) You can adjust the range of change.
  • FIG. 13 is a graph showing a change in drain current with time for each contact time of nitrogen gas when nitrogen gas is brought into contact with a sensing device according to an embodiment of the present invention.
  • Nitrogen gas was applied to the surface of the liquid crystal layer 170 at a flow rate of 33 ⁇ l / s (2 sccm).
  • the flow rate of 33 ⁇ l / s (2 sccm) is the lowest level that human skin can feel, or the level of gas strength (pressure) that human skin cannot feel, depending on individual differences.
  • a negative sign for the drain current I D is omitted. Gas contact times are indicated at the peak positions in each graph.
  • the drain current (I D ) value is It is significantly increased compared to the drain current I D value when no nitrogen gas is applied.
  • 14 is a graph showing a change amount of drain current for each gas contact time when nitrogen gas is contacted with a sensing device according to an exemplary embodiment of the present invention. As shown in Figure 13 and Figure 14, the longer the contact time the gas increases the drain current (I D), the change ( ⁇ I D) of the intensity (peak value) of the signal, and a drain current (I D).
  • FIG. 15 is a graph illustrating a delay time for each gas contact time when nitrogen gas is contacted with a sensing device according to an exemplary embodiment of the present disclosure.
  • the delay time is measured as the time at which the drain current I D becomes the maximum value after stopping the gas flow.
  • the sensing device 100 may measure the contact time of the gas based on the delay time, and detect the strength of the gas based on the maximum value, the amount of change, or the rate of change of the drain current I D.
  • FIG. 16 is a graph illustrating an increase time constant and a decrease time constant for each gas contact time when nitrogen gas is contacted with a sensing device according to an exemplary embodiment of the present disclosure.
  • the rise time constant and the decay time constant ⁇ were calculated by fitting according to the single exponential equation for the graph of FIG. 13.
  • I D0 , A, and t represent initial drain current values, proportional constants, and measurement time, respectively.
  • the decay time constant (shown as a circle) is represented by a value greater than the increase time constant (shown as a square). This means that the reduction of the drain current occurs over a longer time than the increase of the drain current.
  • the reduction time constant ⁇ tends to decrease gradually with increasing gas contact time.
  • the sensing device 100 may measure the contact time of the gas based on the decay time
  • FIG. 17 is a graph illustrating a change in the drain current I D value with time for each gas flow rate when nitrogen gas is applied to a sensing device according to an exemplary embodiment of the present invention.
  • a negative sign for the drain current I D is omitted.
  • the drain current value I D increases significantly compared to the case where no nitrogen gas is contacted.
  • the drain current value I D varies considerably even when the gas flow rate is 0.7 sccm (11 ⁇ l / s) that human skin cannot feel at all.
  • FIGS. 17 to 18 are graph showing a change amount of drain current for each gas intensity when nitrogen gas is applied to a sensing device according to an exemplary embodiment of the present invention. 17 to 18, 0.7 (sccm), 1.0 (sccm), 1.5 (sccm), 2.0 (sccm), 2.5 (sccm), 3.0 (sccm) for the sensing device according to the embodiment of the present invention, respectively.
  • the drain current I D value increases significantly.
  • the maximum value of the drain current I D signal and the change amount ⁇ I D increase proportionally.
  • the sensing device 100 may detect the intensity (flow rate) of the gas based on the maximum value (peak value) of the drain current I D , the change amount ⁇ I D , or the rate of change per unit time.
  • FIG. 19 is a graph showing a delay time for each gas flow rate when nitrogen gas is contacted with a sensing device according to an exemplary embodiment of the present invention.
  • the delay time was measured as the time after which the gas flow was stopped and the drain current I D value reached the maximum value. Referring to Figures 17 and 19, the delay time decreases significantly with increasing gas flow rate (intensity).
  • the sensing device 100 can measure the gas strength based on the delay time.
  • the time delay phenomenon as shown in FIG. 19 is due to the influence of some liquid crystal molecules weakly affected by the electric field.
  • the increase time constant and decrease time constant ( ⁇ ) were calculated by fitting according to the single exponential equation for the graph shown in FIG. Referring to FIG. 20, the decay time constant is represented by a value larger than the rise time constant, which means that the decrease of the drain current is performed for a longer time than the increase of the drain current.
  • the increase and decrease time constants ⁇ gradually decrease as the gas strength increases.
  • the sensing device 100 may measure gas intensity based on the increase time constant or the decrease time constant.
  • FIG. 21 is a view showing the results of observing the arrangement of liquid crystal molecules in the channel region by an optical micrograph in the in-situ measurement method while contacting the nitrogen gas to the sensing device according to an embodiment of the present invention.
  • Two polarizers were used to observe the change in liquid crystal array.
  • a liquid crystal array is schematically shown in the right region of FIG. 21.
  • the liquid crystal molecules on the surface of the channel layer 160 are basically arranged in the form of homeotropic geometry because of the hexyl groups on the surface of the channel layer 160, but in the cross-polarizing condition, From not entirely dark, it can be seen that the liquid crystal molecules on the surface of the channel layer 160 are inclined at a slight angle from the vertical axis of the homeotropic alignment. Some dipoles have a different orientation than many dipoles.
  • the negative dipole of the liquid crystal molecules is ideally shown in FIG. 23, as shown in FIG. 23. It is located closer to the surface of the channel layer 160 by the contact of the flow.
  • the nitrogen gas stops contacting, as shown in FIG. 22, the molecular orientation changes, thereby reducing the induced charge density in the channel layer 160, which in turn reduces the drain current.
  • the sensing device 100 includes the liquid crystal layer 170 on the surface of the channel layer 160 of the field effect transistor, and when the physical stimulus is applied to the liquid crystal layer 170, As the orientation of molecules changes, the dipole direction (force) changes, ultimately affecting the electrical signal of the organic transistor to sense it.
  • the drain current of the field effect transistor is significantly improved by forming the liquid crystal layer 170 and amplifying by applying a gate voltage.
  • the drain current depends on the time and intensity of the applied nitrogen gas flow due to dipole rearrangement due to the collective movement of liquid crystal molecules. Changes greatly.
  • liquid crystal-organic field effect transistor sensing devices can sense ultra-fine levels of nitrogen gas flow that cannot be felt by human skin.
  • obtaining high sensitivity to ultra-fine physical stimuli is the collective behavior of liquid crystal molecules, ie the movement of multiple neighboring liquid crystal molecules by one stimulated liquid crystal molecule, and thus the channel layer of the field effect transistor device. This is because of the phenomenon in which the dipole is sensitively generated / changed at (160).
  • the sensing device 100 further includes a protective layer 180 formed on the liquid crystal layer 170.
  • the liquid crystal layer 170 may be bonded to a thin protective film skin.
  • the liquid crystal layer 170 is protected by the same protective layer 180.
  • the protective layer 180 may include a polymer film.
  • the protective layer 180 may be a thin film (eg, 100 ⁇ m thick) PET (poly (ethylene terephthalate)) film widely used as a touch panel and a flexible substrate in applications such as smartphones.
  • the sensing device 100 detects a current value between the drain electrode 150 and the source electrode 140 that changes according to a physical stimulus applied to the surface of the protective layer 180, and detects a physical stimulus based on the detected current value. It can be detected.
  • the effect of sensing the ultra-fine physical stimulus also occurs when the protective layer 180 is formed on the liquid crystal layer 170. This shows the applicability to practical applications of liquid crystal-organic field effect transistor sensing devices.
  • Forming a 12 mm ⁇ 1 mm gate electrode 120 on the substrate 110 by patterning an indium-tin oxide coated glass substrate, followed by acetone and isopropyl It was washed with alcohol (isopropyl alcohol).
  • the patterned ITO glass substrate was treated with ultraviolet-ozone for 28 minutes at 28 mW / cm 2 intensity, and polymethyl methacrylate (PMMA, average molecular weight 120 kDa, polydispersity index) was placed on top of the ITO glass substrate.
  • PMMA polymethyl methacrylate
  • Sigma-Aldrich layer was spin-coated to a thickness of 450nm, and then soft-baked at 90 ° C. for 60 minutes to form an insulating layer 130.
  • the source electrode 140 and the drain electrode 150 were then deposited with silver (Ag) on the PMMA layer through a shadow mask using resistive evaporation techniques in a vacuum chamber. After the silver deposited substrate was removed from the vacuum chamber, spin-coated a layer of poly-3-hexylthiopine (P3HT polymer, average molecular weight 70kDa, polydispersity index 1.8, regioregularity 96%, Rieke Metals), 60 The channel layer 160 was formed by soft baking at a temperature of 15 ° C. for 15 minutes.
  • P3HT polymer poly-3-hexylthiopine
  • FIG. 25 is a graph illustrating a change in drain current with time for each gas rate when nitrogen gas is applied to the sensing device according to the embodiment shown in FIG. 24.
  • the contact time of nitrogen gas was maintained at 15 seconds.
  • the drain voltage was maintained at -2 (V) and the gate voltage at -5 (V).
  • the negative sign of the drain current I D is omitted.
  • the drain current I D is significantly increased as shown in FIG.
  • the sensing device 200 may include a substrate 210, a source electrode 240 and a drain electrode 250 formed on the substrate 210, and a source electrode 240 on the substrate 210.
  • the channel layer 260 formed to be electrically connected to the drain electrode 250, the insulating layer 230 formed on the channel layer 260, the gate electrode 220 formed on the insulating layer 230, and the channel layer.
  • sensing device 200 is a top gate transistor as in the embodiment shown in FIG. It may have a structure.
  • the insulating layer 230 is partially formed at a portion of the channel layer 260, that is, at the center side. A portion of the upper surface of the channel layer 260 except for the insulating layer 230 contacts the liquid crystal layer 270.
  • the sensing device 100 When a physical stimulus is applied to the sensing device 100, the dipole molecule arrangement of the liquid crystal layer 270 is changed, and induced charges are generated / amplified in the upper portion of the channel layer 260 in contact with the liquid crystal layer 270. As a result, the physical signal can be detected from the change of the drain current.
  • the sensing device can sense an ultra-signal gas flow that an human cannot feel as an electric signal by fusing a liquid crystal and an organic field effect transistor device whose molecular arrangement is changed by physical stimulation. All processes can be carried out at room temperature, and the device can be manufactured from a plastic film substrate, so that sensor devices can be manufactured at low cost. When fabricated with a device having a flexible plastic film structure, it can be applied to artificial skin such as a humanoid robot (humanoid artificial sensory robot). Sensing ultra-small gas flow charts that humans can't feel, it can be measured by electric signals, and it can be applied to various pressure sensors or touch sensors because it can detect ultra-fine physical stimuli. When the sensing element of the present invention is added to the TFT-LCD structure, since the LCD itself may perform a touch function, the touch LCD may be implemented without attaching a touch panel.
  • the display device 300 includes a plurality of pixels 300a, 300b, and 300c. Each pixel 300a, 300b, 300c emits light by an electric field.
  • the pixels 300a, 300b, and 300c of the display device 300 may be divided by the black matrix 322 provided in a lattice form.
  • the display device 300 may be, for example, pixels 300a having a filter for transmitting red light, pixels 300b having a filter for transmitting green light, and blue (for example). Blue) may include pixels 300c having a filter for transmitting light.
  • the pixels 300a, 300b, and 300c may be arranged in a mattress form in rows and columns. In the embodiment of FIG. 27, the display device 300 includes 9 rows x 9 columns of pixels, but the number and arrangement of the pixels is not limited thereto.
  • the liquid crystal display 300 may include a driving substrate 310, a color filter substrate 320, and a liquid crystal unit 330.
  • the driving substrate 310 provides a driving signal to the pixel electrode 316 for applying an electric field to the liquid crystal unit 330.
  • the color filter substrate 320 is disposed to face the driving substrate 310.
  • the color filter substrate 320 filters white light provided through the liquid crystal unit 330 to emit red light, blue light, or green light.
  • the liquid crystal unit 330 is provided between the driving substrate 310 and the color filter substrate 320 and includes a liquid crystal whose molecular orientation is changed by an electric field according to a driving signal applied to the pixel electrode 316.
  • the driving substrate 310 may include a first substrate 311, a pixel electrode 316 provided on the first substrate 311, and a driving transistor provided on the first substrate 311. 313, and a sensing device 100 provided on the first substrate 311.
  • the pixel electrode 316 may be provided for each pixel on the first substrate 311.
  • the pixel electrode 316 may perform a function of applying an electric field to the liquid crystal region corresponding to each pixel.
  • the driving transistor 313 may be provided for each pixel on the first substrate 311.
  • the driving transistor 313 may provide the pixel electrode 316 with a driving signal corresponding to a data signal for determining light emission of the pixel so as to form an electric field in a region on the first substrate 311 corresponding to each pixel.
  • FIG. 29 is a plan view illustrating a driving substrate configuring the display device illustrated in FIG. 28. 28 to 29, the driving transistor 313 may include a first electrode 3132, a second electrode 3133, a third electrode 3131, and a first channel layer 3134.
  • the first electrode 3132 is provided on the first substrate 311, and a data signal DATA SIGNAL for determining light emission of the pixel may be applied through the data line DL1 formed on the first substrate 311.
  • various images may be implemented through the display device 300 by applying a corresponding data signal for each pixel.
  • the second electrode 3133 is provided to be spaced apart from the first electrode 3132.
  • the second electrode 3133 is in contact with the portion 316a of the pixel electrode 316, so that a driving signal of the second electrode 3133 corresponding to the data signal may be applied to the pixel electrode 316.
  • the first channel layer 3134 may be formed to electrically connect the first electrode 3132 and the second electrode 3133.
  • the third electrode 3131 is formed to be insulated from the first electrode 3132, the second electrode 3133, and the first channel layer 3134 by the first insulating layer 312.
  • the first gate signal may be applied to the third electrode 3131 through the first gate line GL1 provided on the first substrate 311.
  • the driving transistor 313 may be turned on or turned off by the first gate signal.
  • the sensing device 100 may be provided on the first substrate 311 to sense a contact from the outside.
  • the sensing device 100 may include a gate electrode 120, a source electrode 140, a drain electrode 150, a second channel layer 160, a liquid crystal layer 170, and a protective layer 180.
  • the gate electrode 120 is formed on the first substrate 311 and provided to be insulated from the source electrode 140, the drain electrode 150, and the second channel layer 160 by the first insulating layer 312. .
  • the source electrode 140 and the drain electrode 150 are formed to be spaced apart from the first insulating layer 312.
  • the second channel layer 160 may be provided on the first insulating layer 312 to electrically connect the source electrode 140 and the drain electrode 150.
  • the liquid crystal layer 170 may be formed on the second channel layer 160 to be in direct contact with the second channel layer 160.
  • the protective layer 180 may be formed on the liquid crystal layer 170 to protect the liquid crystal layer 170.
  • the source signal may be applied to the source electrode 140 through the source line SL provided on the first substrate 311.
  • a drain signal may be applied to the drain electrode 150 through the drain line DL2 provided on the first substrate 311.
  • the second gate signal may be applied to the gate electrode 120 through the second gate line GL2 provided on the first substrate 311.
  • the storage line 314 may be formed on the first insulating layer 312 to store the driving signal applied to the pixel electrode 316.
  • the second insulating layer 315 is formed on the substrate 311.
  • a first alignment layer 317 may be formed on the pixel electrode 316 to induce molecular alignment of the liquid crystal unit 330.
  • the color filter substrate 320 may include a second substrate 321, a black matrix 322, a color filter 323, a common electrode 324, and a second alignment layer 325.
  • the second substrate 321 may be disposed to face the first substrate 311.
  • the second substrate 321 may be formed of a transparent insulating material, for example, glass, silicon, quartz, plastic, or the like, and may have flexibility.
  • the black matrix 322 may be formed on the second substrate 321 and may be formed in a lattice shape along the boundary between the pixels.
  • the black matrix may consist of organic or inorganic matters.
  • the color filter 323 may be provided between the grid shapes of the black matrix 322 for each pixel.
  • the common electrode 324 may be provided on the second substrate 321 to apply a common signal for forming an electric field to the liquid crystal unit 330.
  • the liquid crystal unit 330 may include a liquid crystal whose molecular orientation changes according to an electric field between the pixel electrode 316 and the common electrode 324.
  • the liquid crystal unit 330 corresponds to a display element whose light emission is controlled by an electric field, that is, a liquid crystal display element.
  • the liquid crystal unit 330 may include a plurality of liquid crystal molecules having dielectric anisotropy.
  • FIG. 30 is a schematic circuit diagram of the liquid crystal display shown in FIG. 28.
  • the circuit diagram of FIG. 30 shows a circuit diagram of one pixel among pixels constituting the liquid crystal display.
  • the first gate line GL1 and the second gate line GL2 are in a first direction (for example, a row direction), and the data line DL1 and the source line SL and The drain line DL2 may extend in a second direction (eg, a column direction) that crosses the first direction.
  • the pixel includes a driving transistor 313, a liquid crystal capacitor C LC , and a storage capacitor C ST .
  • the gate electrode 3131 of the driving transistor 313 is connected to the first gate line GL1, the first electrode 3132 is connected to the data line DL1, and the second electrode 3133 is a liquid crystal capacitor C.
  • LC and a storage capacitor C ST connected to the storage line 314.
  • a reference symbol 'V COM ' illustrated in FIG. 30 is a common voltage applied to the common electrode 324.
  • a turn on voltage is applied to the third electrode 3131 of the driving transistor 313 through the first gate line GL1, and a data voltage is applied to the first electrode 3132 through the data line DL1.
  • a conductive channel is formed in the first channel layer 3134, and the driving transistor 313 is turned on.
  • a driving signal corresponding to the data voltage is applied to the pixel electrode 316 through the second electrode 3133 of the driving transistor 313, and an electric field corresponding to the data voltage is formed in the liquid crystal unit 330.
  • the molecular orientation of the liquid crystal unit 330 is changed by an electric field formed between the pixel electrode 316 and the common electrode 324, the light provided from the backlight unit (not shown) under the liquid crystal display 300 is transferred to the second substrate.
  • the image is realized by being emitted or blocked to the 321 side.
  • the data voltage is charged in the liquid crystal capacitor C LC and the storage capacitor C ST connected to the second electrode 3133.
  • the storage capacitor C ST charges the data signal and maintains it even after the driving transistor 313 is turned off.
  • the display device is a light receiving device, a separate light source for providing light is provided.
  • the light source may be a backlight unit provided on one side of the display device.
  • the display device is a reflective display device, the light source may be an external light source such as the sun.
  • a black matrix (not shown) may be provided between the first substrate 311 and the first channel layer 3134, and the black matrix and the first channel layer ( An insulating film may be added between 3134.
  • the black matrix blocks leakage current that may occur when light from the backlight unit reaches the first channel layer 3134 directly.
  • the black matrix may consist of organic or inorganic matters.
  • the display device 300 may detect a contact from a user by the sensing device 100.
  • a contact from the user is applied to the upper surface of the second substrate 321, the corresponding physical stimulus is transmitted to the sensing device 100.
  • the sensing device 100 Even if only a minute contact is applied to the sensing device 100 corresponding to a pressure of 2 (sccm) or less, the sensing device 100 can sensitively sense such a minute contact.
  • the display device 300 may detect a user's touch input without requiring a separate touch panel for detecting a user's touch input.
  • the sensing device 100 may be provided only for some pixels of the display device 300, and the remaining pixels may be implemented like normal pixels, thereby reducing manufacturing costs.
  • the sensing device 100 is provided on the driving substrate 310 in FIG. 28, the sensing device 100 may be provided on the color filter substrate 320 side. That is, the sensing device 100 may be provided on the second substrate 321 to sense a user's touch input.
  • 31 to 33 are plan views illustrating a method of manufacturing a display device according to an exemplary embodiment. 31 to 33, a method of manufacturing a display device according to an exemplary embodiment of the present invention will be described below.
  • a third electrode 3131, a first gate line GL1, a gate electrode 120, and a second gate line GL2 are formed on the first substrate 311.
  • the third electrode 3131, the first gate line GL1, the gate electrode 120, and the second gate line GL2 may be referred to as a gate wiring part.
  • the gate wiring portion may be formed of a conductive material, for example, a metal.
  • the gate wiring part may be formed by forming a metal layer on the entire surface of the first substrate 311 and patterning the metal layer by a photolithography process.
  • the gate wiring part may be formed of a single layer made of a single metal or an alloy, but is not limited thereto and may be formed of a multilayer formed of two or more kinds of metals and / or alloys thereof.
  • the third electrode 3131 and the first gate line GL1 may be integrally formed.
  • the gate electrode 120 and the second gate line GL2 may be integrally formed.
  • the process of forming the gate electrode 120 and the second gate line GL2 may be simultaneously performed in the process of forming the third electrode 3131 and the first gate line GL1. Accordingly, the gate electrode 120 and the second gate may be utilized by using an existing process without adding a separate process for forming the gate electrode 120 and the second gate line GL2 on the first substrate 311.
  • Line GL2 may be formed.
  • a first insulating layer 312 is formed on the first substrate 311.
  • the first insulating layer 312 may include an insulating material such as silicon nitride or silicon oxide.
  • a first electrode 3132, a data line DL1, a second electrode 3133, a source electrode 140, a source line SL, and a drain electrode are formed on the first insulating layer 312.
  • 150, a drain line DL2, and a storage line 314 are formed.
  • the first electrode 3132, the data line DL1, and the second electrode 3133 may be referred to as data wiring units.
  • the source electrode 140, the source line SL, the drain electrode 150, and the drain line DL2 may be referred to as an electrode wiring part.
  • the data wire part, the electrode wire part, and the storage line 314 may be formed of a conductive material, for example, a metal.
  • the data wiring part, the electrode wiring part, and the storage line 314 may be formed by, for example, forming a metal layer on the entire surface of the first insulating layer 312 and patterning the metal layer by a photolithography process.
  • the data wiring part, the electrode wiring part, and the storage line 314 may be formed of a single layer made of a single metal or an alloy, but are not limited thereto.
  • the data wiring part, the electrode wiring part, and the storage line 314 may be formed of a multilayer formed of two or more metals and / or alloys thereof. May be
  • the first electrode 3132 and the data line DL1 may be integrally formed.
  • the source electrode 140 and the source line SL may be integrally formed.
  • the drain electrode 150 and the drain line DL2 may be integrally formed.
  • the process of forming the source electrode 140, the source line SL, the drain electrode 150, and the drain line DL2 of the sensing device 100 may include a first electrode 3132, a data line DL1, and a second electrode.
  • the process 3133 and the storage line 314 may be simultaneously performed in parallel. Therefore, an existing process may be utilized without adding a separate process for forming the source electrode 140, the source line SL, the drain electrode 150, and the drain line DL2 on the first substrate 311.
  • the source electrode 140, the source line SL, the drain electrode 150, and the drain line DL2 of the sensing device 100 may be formed.
  • a first channel layer 3134 is formed between the first electrode 3132 and the second electrode 3133, and a second channel layer (between the source electrode 140 and the drain electrode 150). 160 is formed.
  • the first channel layer 3134 and the second channel layer 160 may include an oxide semiconductor layer.
  • the oxide semiconductor layer may be formed of an oxide including at least one element of indium (In), gallium (Ga), zinc (Zn), and tin (Sn).
  • the first channel layer 3134 and the second channel layer 160 may be formed by forming an oxide and then patterning the oxide layer by a photolithography process.
  • the first channel layer 3134 may be formed to partially overlap the first electrode 3132 and the second electrode 3133 to cover at least a portion of each of the first electrode 3132 and the second electrode 3133.
  • the second channel layer 160 may be formed to partially overlap the source electrode 3132 and the drain electrode 3133 to cover at least a portion of each of the source electrode 140 and the drain electrode 150.
  • the process of forming the second channel layer 160 of the sensing device 100 may be performed in parallel in the process of forming the first channel layer 3134. Accordingly, without adding a separate process for forming the second channel layer 160 to electrically connect the source electrode 140 and the drain electrode 150, the sensing device 100 may be utilized by using an existing process.
  • the second channel layer 160 may be formed. Therefore, if the liquid crystal layer 170 is formed on the second channel layer 160 and only the process of forming the protective layer 180 is additionally performed, the sensing device 100 may be provided to the driving substrate 310. .
  • a second insulating layer 315 is formed to cover the sensing device 100 and the driving transistor 313.
  • the second insulating layer 315 may include an insulating material such as silicon nitride or silicon oxide.
  • the second insulating layer 315 may be provided as a passivation layer.
  • a contact hole 3133a is formed in the second insulating layer 315 to expose a portion of the second electrode 3133 to contact the pixel electrode 316.
  • the contact hole 3133a may be formed using a photolithography process.
  • the pixel electrode 316 is formed on the first substrate 311 on which the second insulating layer 315 is formed.
  • the pixel electrode 316 may be formed by forming a conductive layer with a conductive material and then patterning the conductive layer using a photolithography process.
  • the pixel electrode 316 may be connected to the second electrode 3133 through the contact hole 3133a.
  • the pixel electrode 316 may be made of a transparent material.
  • the manufacturing of the display device 300 is completed by interposing the liquid crystal unit 330 between the driving substrate 310 and the color filter substrate 320.
  • a spacer 340 may be provided in the liquid crystal unit 330 to support the liquid crystal unit 330 and to divide the liquid crystal unit 330 into liquid crystal regions for each pixel.
  • the color filter substrate 320 forms a black matrix 322 on the second substrate 321, forms a color filter 323 between the grids of the black matrix 322, and then the common electrode 324 and the second electrode. It may be manufactured by the process of forming the alignment layer 325.
  • the common electrode 324 may be provided to apply a common signal to all the pixels.
  • the common electrode 324 may be made of a transparent conductive material.
  • the second alignment layer 325 may perform a function of inducing molecular orientation of the liquid crystal unit 330.
  • the organic light emitting display device 400 may apply a driving signal to the first substrate 410, the sensing device 100 formed on the first substrate 410, and the cathode electrode 430.
  • the insulating layer 420, the cathode electrode 430, the electron transport layer 440, the organic emission layer 450, the hole transport layer 460, and the anode electrode provided to insulate the driving transistor DTR and the sensing device 100.
  • 470 and a second substrate 480 provided to insulate the driving transistor DTR and the sensing device 100.
  • the process of forming the sensing device 100 and the driving transistor DTR on the first substrate 410 may be performed by a process similar to that of FIGS. 31 to 33.
  • the cathode electrode 430 may correspond to the pixel electrode of the liquid crystal display, and the anode electrode 470 may correspond to the common electrode of the liquid crystal display. Similar to the liquid crystal display, the cathode electrode 430 and the driving transistor DTR may be provided for each pixel.
  • the sensing device 100 may be provided for each pixel or may be provided only to some of the pixels.
  • the sensing device 100 may have the same structure as shown in FIG. 28.
  • the organic emission layer 450 may include an organic emission material that exhibits colors such as red, green, and blue, or exhibits white light.
  • the organic light emitting layer 450 corresponds to an electroluminescent device that generates light according to a driving signal from the driving transistor DTR.
  • 34 illustrates an example in which the electron transporting layer 440 and the hole transporting layer 460 are formed above and below the organic emission layer 450, but the electron transporting layer 440 and the hole transporting layer 460 are omitted, In addition to the hole transport layer 460, an electron injection layer and a hole injection layer may be further formed, or an electron injection layer and a hole injection layer may be formed instead of the electron transport layer 440 and the hole transport layer 460.
  • the anode electrode 470 may be provided on the front surface of the second substrate 480 to perform a function as a common electrode for all pixels.
  • the cathode electrode 430 may be configured to be used as the common electrode.
  • the organic emission layer 450 generates light by an electric field formed between the cathode electrode 430 and the anode electrode 470. Accordingly, an image is displayed in the upper direction or the lower direction of the second substrate 480.
  • the display direction of the image may vary according to materials and transparency of the cathode electrode 430 and the anode electrode 470. For example, when the display device includes an opaque cathode electrode 430 and a transparent anode electrode 470, a top emission display device is provided in which an image is displayed in an upward direction. On the contrary, when the display device has a transparent cathode electrode 430 and an opaque anode electrode 470, a back light emitting display device in which an image is displayed in a downward direction is provided.
  • the sensing device 100 is formed on the first substrate 410, but it is also possible to form the sensing device 100 on the second substrate 480.
  • the display device 400 may detect a contact from a user by the sensing device 100.
  • a contact from a user is applied to the first substrate 410 or the second substrate 480 on which an image is displayed, a corresponding physical stimulus is transmitted to the sensing device 100.
  • the sensing device 100 can sensitively sense such a minute contact. Accordingly, the display device 400 according to an exemplary embodiment of the present invention can detect a user's touch input without requiring a separate touch panel for detecting a user's touch input.
  • 35 is a circuit diagram schematically illustrating a display device according to another exemplary embodiment of the present invention.
  • 35 illustrates an example of an organic light emitting display device, and illustrates a circuit diagram of one pixel among pixels arranged in a matrix form.
  • the display device 500 may include a switching transistor (STR), a driving transistor (DTR), a storage capacitor (C ST ), and a pixel for each pixel. And an organic light emitting diode (LD).
  • STR switching transistor
  • DTR driving transistor
  • C ST storage capacitor
  • LD organic light emitting diode
  • the switching transistor STR includes a gate electrode, a source electrode and a drain electrode.
  • the gate electrode GE1 of the switching transistor STR is connected to the first gate line GL1
  • the source electrode SE1 is connected to the data line DL1
  • the drain electrode is connected to the driving transistor DTR.
  • the switching transistor STR transfers the data signal applied to the data line DL1 to the driving transistor DTR in response to the first gate signal applied to the first gate line GL1.
  • the driving transistor DTR includes a gate electrode, a source electrode, and a drain electrode.
  • the gate electrode of the driving transistor DTR is connected to the drain electrode of the switching transistor STR, the source electrode is connected to the driving voltage line VL, and the drain electrode is connected to the organic light emitting diode LD.
  • the driving transistor DTR applies an output voltage to the organic light emitting diode LD whose magnitude varies depending on a voltage applied between the gate electrode and the drain electrode thereof.
  • the first gate line GL1 is in the first direction (eg, the row direction), and the data line DL1 and the driving voltage line VL cross the first direction (eg, the column direction). ) May be extended.
  • the storage capacitor C ST is connected between the gate electrode and the source electrode of the driving transistor DTR.
  • the storage capacitor C ST charges the data signal applied to the gate electrode of the driving transistor DTR and maintains the data signal even after the switching transistor STR is turned off.
  • the organic light emitting diode LD includes a first electrode (for example, an anode) connected to the drain electrode of the driving transistor DTR, and a second electrode EL2 (for example, a cathode) to which a common voltage is applied. Include.
  • the organic light emitting diode LD displays an image by emitting light at different intensities according to the output voltage of the driving transistor DTR.
  • the sensing device 100 receives the source voltage V S from the source electrode through the source line SL, receives the drain voltage V D from the drain electrode through the drain line DL2, and receives the second gate line.
  • the second gate voltage is transmitted to the gate electrode through GL2.
  • the second gate line GL2 may be disposed in a first direction (eg, a row direction), and the source line SL and the drain line DL2 may cross a first direction (eg, a second direction). , Column direction).
  • the display device 500 according to an exemplary embodiment of the present disclosure may detect a contact applied from a user by the sensing device 100. Therefore, the display device 500 according to an exemplary embodiment of the present invention can detect a user's touch input without a separate touch panel for detecting a user's touch input.
  • the display device is described as an electronic device using a thin film transistor according to an exemplary embodiment of the present invention, the present invention is not limited thereto, and the thin film transistor may be used in other electronic devices in which the thin film transistor may be used.
  • a display device according to an exemplary embodiment of the present invention a liquid crystal display and an organic light emitting display are presented as examples, but are not limited thereto, and other types of display devices, for example, electrophoretic display devices and electronic devices. Of course, it can also be used in a wet display device.
  • the electrophoretic display device uses an electrophoretic phenomenon and may include an electrophoretic layer corresponding to the image display layer.
  • the electronic wet display device uses a wetting phenomenon between two fluids and may include an electrowetting layer corresponding to the image display layer.

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Abstract

La présente invention concerne un dispositif de détection, un dispositif d'affichage et un procédé de fabrication associé, et le dispositif de détection comprend : une électrode source ; une électrode drain espacée de l'électrode source ; une couche canal prévue pour faire la connexion électrique entre l'électrode source et l'électrode drain ; une électrode grille prévue pour être isolée de la couche canal ; et une couche de cristaux liquides formée sur la couche canal de manière à entrer directement en contact avec la couche canal. Selon la présente invention, un super-micro stimulus physique peut être détecté sur la base d'un changement dans la valeur du courant circulant à travers la couche canal en raison d'un changement d'orientation moléculaire de la couche de cristaux liquides provoqué par un stimulus physique. Un dispositif d'affichage selon la présente invention comprend : un élément d'affichage, à partir duquel l'émission de lumière est commandée par un champ électrique ; au moins une électrode prévue pour appliquer un champ électrique à l'élément d'affichage ; et un dispositif de détection conçu pour détecter un contact provenant de l'extérieur par rapport à l'élément d'affichage, le dispositif de détection comprenant : une électrode source ; une électrode drain espacée de l'électrode source ; une couche canal prévue pour faire la connexion électrique entre l'électrode source et l'électrode drain ; une électrode grille prévue pour être isolée de la couche canal ; et une couche de cristaux liquides formée sur la couche canal de manière à entrer directement en contact avec la couche canal. Selon la présente invention, le toucher de l'utilisateur par rapport à un dispositif d'affichage peut être détecté, sans fabriquer de panneau tactile séparé, au moyen d'un dispositif de détection avec lequel est équipé le dispositif d'affichage.
PCT/KR2014/001276 2014-01-03 2014-02-17 Dispositif de détection, dispositif d'affichage et procédé de fabrication associé WO2015102150A1 (fr)

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KR20140000853 2014-01-03
KR10-2014-0000853 2014-01-03
KR20140016641 2014-02-13
KR10-2014-0016641 2014-02-13
KR1020140017844A KR101541886B1 (ko) 2014-02-17 2014-02-17 감지 디바이스, 표시장치 및 이의 제조 방법
KR10-2014-0017844 2014-02-17
KR1020140017843A KR101541888B1 (ko) 2014-02-17 2014-02-17 감지 디바이스, 감지 디바이스의 제조 방법 및 물리적 자극 감지 방법
KR10-2014-0017843 2014-02-17

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