WO2015100519A1 - Preparation method of high-nitrogen-content capacitor grade tantalum powder and tantalum powder prepared therefrom and tantalum capacitor - Google Patents

Preparation method of high-nitrogen-content capacitor grade tantalum powder and tantalum powder prepared therefrom and tantalum capacitor Download PDF

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Publication number
WO2015100519A1
WO2015100519A1 PCT/CN2013/090820 CN2013090820W WO2015100519A1 WO 2015100519 A1 WO2015100519 A1 WO 2015100519A1 CN 2013090820 W CN2013090820 W CN 2013090820W WO 2015100519 A1 WO2015100519 A1 WO 2015100519A1
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nitrogen
taf
capacitor
tantalum
powder
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PCT/CN2013/090820
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French (fr)
Chinese (zh)
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郑爱国
杨国启
郭涛
王治道
任萍
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宁夏东方钽业股份有限公司
国家钽铌特种金属材料工程技术研究中心
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Priority to CN201380070714.3A priority Critical patent/CN104936729B/en
Priority to PCT/CN2013/090820 priority patent/WO2015100519A1/en
Publication of WO2015100519A1 publication Critical patent/WO2015100519A1/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00Making metallic powder or suspensions thereof
    • B22F9/16Making metallic powder or suspensions thereof using chemical processes
    • B22F9/18Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
    • B22F9/24Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions

Definitions

  • the invention relates to the field of high specific capacitance capacitor grade tantalum powder and high specific capacitance capacitor fabrication. Background technique
  • Metal ruthenium is a valve metal that forms a dense oxide film on the surface and has a unidirectional conductive property.
  • Anode film made of tantalum is chemically stable (especially stable in acidic electrolytes), electrical resistance
  • the dielectric constant is large (27.6) and the leakage current is small.
  • it has a wide operating temperature range (-80 ⁇ 200), high reliability, shock resistance and long service life. It is an ideal material for making small and reliable tantalum capacitors.
  • Tantalum capacitors are electronic devices in which a tantalum metal anode is used to directly form a dielectric oxide film on the tantalum surface by anodization.
  • the specific surface area of the tantalum powder is high, and even after pressing and sintering, a high specific surface area is maintained due to its special pore structure, so that a high ratio (electrical) capacity of the capacitor is obtained.
  • the potassium fluoroantimonate sodium reduction process is the most widely used and the most mature technology in the current production process.
  • the potassium fluoroantimonate sodium reduction process also known as the pyrometallurgical reduction process, is a capacitor grade prepared by using K 2 TaF 7 and Na as main raw materials, using a halogen salt such as NaCl or KC1 or a mixture of halogen salts as a diluent.
  • the main reaction mechanism of the method is as follows:
  • K 2 TaF 7 +5Na Ta+5NaF+2KF (1)
  • K 2 TaF 7 reacts with liquid sodium under argon gas protection and at a certain temperature.
  • the reduced tantalum powder is subjected to heat treatment after washing with water and pickling, and then deoxidized by magnesium to obtain a final high-purity tantalum powder.
  • K 2 TaF 7 has been synthesized by the synthesis of gas phthalic acid and KC1.
  • KC1 was added to gas citrate to synthesize K 2 TaF 7 , and the following reaction occurred:
  • H 2 TaF 7 + 2KC1 K 2 TaF 7 + HC1 (2) Specifically, KC1 is added to H 2 TaF 7 , HF is added to adjust L L , the mixture is evenly stirred, and the heat preservation time is not less than 20 minutes. After the heat preservation, the crystal is cooled, washed, and dried at 120 to 160 ° C. A potassium citrate powder was obtained.
  • a more detailed method for synthesizing potassium fluoroantimonate and a method for preparing bismuth powder by fire method can be referred to the ⁇ Metallurgical Industry unearthed in 1982, published by Xing Liangzuo, etc., published in 1986 by Wu Ming et al., "The Metallurgical Technology of Minmetals” and the “Modern Metallurgy” edited by Guo Qingwei and others, which was unearthed in the metallurgical industry in 2009.
  • capacitor-grade tantalum powder is developing in the direction of high specific volume and high purity. It is well known that the specific volume of tantalum powder is proportional to its specific surface area, that is, the smaller the average particle size of tantalum powder, the larger the specific surface area and the higher the specific volume. To achieve high specific volume of tantalum powder, the key technology is to produce tantalum powder with a smaller average particle size.
  • the core of the study is to control the nucleation of the nano-reduction process by controlling the reduction conditions, including the composition of the potassium fluoroantimonate and the diluent dissolved salt, the reduction temperature, the rate of sodium injection, and the like.
  • Forming, distributing and growing, the desired tantalum powder having a certain specific surface area and particle size is prepared.
  • the mechanical method is to obtain finer particles of tantalum powder by controlling the conditions of hydrogenation milling or ball milling.
  • the hydrogen reduction method of the halide adopts the preparation technology of nanometer powder, and the prepared degree of ⁇ is in the nanometer order and has a large specific surface area.
  • Doping is a high specific volume of tantalum powder. It is used in the production and research of high specific volume tantalum powder. It is doped in the process of making 1 ⁇ 4 powder. The main purpose is to refine the tantalum powder. The second is to inhibit the growth of the tantalum powder grains during high temperature treatment, and to maximize the possible specific surface area of the tantalum powder and reduce the loss of tantalum powder specific volume. Doping can be carried out in different processes. Common doping elements are N, Si, P, B, C, S, Al, O, etc. and their compounds. The doping element is generally segregated at the grain boundary surface, and reacts with cerium at a high temperature to form various cerium compounds. Doping not only incorporates one element in one process of the process, but also multi-step multi-element doping. This not only refines the tantalum powder, but also reduces the specific volume loss of the tantalum powder.
  • Nitrogen doping in tantalum powder is a popular practice in the industry, especially in high specific volume production.
  • US Pat. No. 6,875,542 proposes a method for preparing a nitrogen-containing metal powder and using the metal powder The obtained porous sintered body and solid electrolytic capacitor, the patent proposes a nitrogen-containing metal powder having a nitrogen content W (ppm) and a specific surface area S (m 2 /g) measured by the BET method, W/S ratio 500 - 3000. The patent also teaches a method of introducing nitrogen into the reduction to increase the nitrogen content.
  • U.S. Patent No. 7,066,975 discloses a nitrogen-containing metal powder, a process for the preparation thereof, and a porous sintered body and a solid electrolytic capacitor obtained by using the metal powder.
  • This patent proposes a nitrogen-containing metal powder containing 50 to 20,000 ppm of solid solution nitrogen, especially yttrium, which contains ? , B, O or a combination thereof, characterized in that nitrogen is present in the form of a solid solution, and the average particle diameter of the nitrogen-containing metal powder is from 80 to 360 nm.
  • U.S. Patent No. 7,473,294 discloses a nitrogen-containing metal powder, a process for the preparation thereof, and a porous sintered body and electrolytic capacitor prepared using the metal powder.
  • the patent proposes a nitrogen-containing metal powder (having a gas and an inner layer) containing 50 to 20,000 ppm of nitrogen in the form of a solid solution, the nitrogen being in a solid solution form, the metal being ruthenium, The nitrogen gas is uniformly infiltrated into the inner layer from the metal, and the metal powder has a particle diameter of ⁇ 250 legs.
  • U.S. Patent No. 6,432,161 discloses another method for preparing a nitrogen-containing metal powder and a porous sintered body and electrolytic capacitor prepared using the metal powder.
  • the patent proposes a method for producing a nitrogen-containing metal powder, which comprises reducing a ruthenium or osmium compound with a reducing agent, and simultaneously introducing a nitrogen gas to the reaction system to form a nitrogen-containing ruthenium or osmium in the form of a solid solution. Nitrogen is simultaneously incorporated into the ruthenium or osmium.
  • This patent is an extension of the sodium reduction fluoroantimonate method to make it suitable for other ruthenium or osmium compounds to be nitrogen-doped.
  • Chinese patent application CN1498144A relates to a method for producing sintered pellets which is prepared by mixing a refractory metal and a refractory metal nitride and found to be higher than those made of refractory metal or refractory metal nitride alone.
  • the proportion of the inner aggregated pores results in an improved capacitor grade powder, an anode and thus a capacitor crucible.
  • the pellet porosity and total volume are maximized.
  • the total pellet pore surface area is relatively independent of the 50% concentration of the refractory metal nitride.
  • a substrate consisting of a 50/50 or 25 ⁇ 5 ⁇ / ⁇ % refractory metal/refractory metal nitride powder mixture will produce a solid capacitor with a higher capacitance recovery and lower ESR.
  • it is directly mixed with tantalum nitride or tantalum or tantalum nitride, and then press molded to form the anode of the capacitor.
  • the method of nitrogen doping in tantalum powder used in the prior art focuses on introducing a nitrogen-containing gas into the reaction system, and nitrogen is present in a solid solution.
  • the nitrogen-doping method has low effectiveness, cannot obtain high-content nitrogen powder, and cannot accurately control the nitrogen-doping amount. Therefore, a niobium-doped nitrogen-doping process with good effect and high controllability is still needed. Summary of the invention
  • An object of the present invention is to provide a high nitrogen content tantalum powder, a method for preparing the same, and a tantalum capacitor produced from the tantalum powder. Moreover, the nitrogen content in the tantalum powder can be accurately controlled.
  • the object of the present invention is achieved by the following aspects.
  • a method of preparing a tantalum powder comprising the steps of:
  • the preparation was carried out by a potassium phthalate sodium reduction process.
  • the invention adds a nitrogen-containing salt in the synthesis process of potassium fluoroantimonate, so that the nitrogen-doping process is carried out in the synthesis process of potassium fluoroantimonate, which is more uniform than the conventional method. And because nitrogen is incorporated in the early stage, it directly affects the primary particles, making the primary particles finer, the specific volume of the tantalum powder higher, and the leakage current and loss are smaller. Therefore, the pass rate of the capacitor product is improved.
  • the sodium bismuth citrate reduction process in the step (d) of the first aspect of the present invention is a process generally employed in the prior art, and can be specifically referred to the description in the background section.
  • the reduced material can be subjected to a conventional treatment such as crushing, washing, and/or pickling.
  • step (a) the amounts of KN0 3 and KC1 are calculated according to formulas (4) and (5):
  • the amount of KC1 (g) concentration of solution of H 2 TaF 7 (g / l ) xH 2 TaF 7 solution volume (1) ⁇ ⁇ 67 ⁇ 1
  • 0.67 and 0.91 are molecular weight ratios of KC1 to potassium nitrate.
  • step (a) the acidity of the H 2 TaF 7 solution is adjusted to 0.7 - 1.2 mol/l before the addition of KN0 3 or a mixture of KN0 3 and KC1.
  • step (b) the pH of the reaction solution is adjusted using HF. In one embodiment, in step (b), the acidity of the reaction liquid is adjusted to 1.2 - 1.65 mol/l. In one embodiment, in step (b), the holding time is not less than 20 minutes. In one embodiment, in step (c), the product is also dried after cooling and crystallization. In one embodiment, the drying is included at 120-160. C drying. In one embodiment, the drying also includes a second drying at 250 - 350 'C.
  • a tantalum powder obtained by the production method according to the first aspect of the invention.
  • a tantalum capacitor manufactured from tantalum powder according to the second aspect of the invention In the tantalum powder of the present invention and the tantalum capacitor manufactured therefrom, the nitrogen content is high, and the nitrogen doping amount can be accurately controlled, so that the electrical performance is superior to the tantalum powder and tantalum capacitors in the prior art.
  • the present invention provides a method of producing a high nitrogen content niobium powder, comprising the steps of:
  • H 2 TaF 7 + 2KN0 3 K 2 TaF 7 +HN0 3 (3) Specifically, after adjusting the H 2 TaF 7 solution to 0.7 - 1.2 mol / l, add KN0 3 and / or KC1, and according to Equations (4) and (5) are used to calculate the amount of KN0 3 and KC1:
  • the amount of KC1 (g) concentration of solution of H 2 TaF 7 (g / l ) xH 2 TaF 7 solution volume (1) ⁇ ⁇ 67 ⁇ 1
  • K 2 TaF 7 synthesized with KC1 was replaced with potassium citrate produced by KN0 3 .
  • the remaining types and amounts of molten salt systems such as NaCl, KC1, KF, and the reducing additives and reduction processes are all in accordance with conventional processes in the prior art.
  • the result is a raw powder which is uniformly nitrogen-doped. This gives a fine grain of the first time.
  • Example 1 the reduced material is subjected to steps of crushing, washing, pickling, etc. to obtain a desired nitrogen-doping product.
  • Example 1 the embodiments of the present invention are described in the accompanying drawings and the accompanying drawings.
  • H 2 TaF 7 having a concentration of 50 g/K of 0.9 mol/l was dissolved in a tank, and the air was condensed for ⁇ 6 time.
  • the purpose is to float part of the organic solution dissolved in the H 2 TaF 7 solution to?
  • the upper layer of the solution in the tank is pumped away, which can effectively reduce the carbon content in the final potassium fluoroantimonate.
  • the H 2 TaF 7 solution 10001 after ⁇ k was added to the synthesis tank, where the effective volume of the synthesis tank was 13001.
  • This embodiment of potassium nitrate was added from about 5 4 .6k g (i.e., m is 0, N 2 is 1.2). Then, the stirring paddle was turned on, and the acidity was adjusted to 1.55 mol/l by adding HF 53 liter. Insulation is carried out by steaming, and the holding time is 20 min. After the completion of the heat preservation, the synthetic liquid UV cooling tank was cooled and crystallized, and the cooling time was 24 hours. After cooling and crystallization, it will be crystallized; centrifuge, rinse with pure water, centrifuge, and separate the separation solution with the mother liquor. Crystallization after separation, and then drying twice, the first use of far infrared dryer, drying temperature 150. C, after the drying is finished, continue the second drying, using vacuum rotary drying, drying temperature 300 e C, after drying 3 ⁇ 4 sodium reduction process.
  • the H 2 TaF 7 having a concentration of 50 g/K of 0.9 mol/l was dissolved in the tank, and the air was condensed and the time was 0 h.
  • the H 2 TaF 7 solution 10001 after the addition was added to the synthesis tank synthesis, where the effective volume of the synthesis tank was 13001.
  • potassium nitrate was added at about 38.2 kg and KC1 at 12 kg (i.e., N1 was 0.36 and N2 was 0.84). Then open the stirring paddle, add HF 53 liters to adjust the acidity to 1.55mol / l, steaming for heat preservation, holding time 30min, after the end of the heat, the synthesis solution ⁇ cooling tank for cooling crystallization, cooling time 24h. After cooling and crystallization, the crystals are placed in a centrifuge, and the crystals are rinsed with pure water, centrifuged, and the separation liquid is treated together with the mother liquor. After separation, the crystal is crystallization, and then dried twice. The first time, the far-infrared dryer is used, and the drying temperature is 150 ⁇ . After the drying is finished, the second drying is continued, and the vacuum drying is performed, and the drying temperature is 300. C, after drying, enter the sodium reduction process.
  • a H 2 TaF 7 solution having a concentration of 50 g/K of 0.9 mol/l was placed in a stripping tank, and compressed air was passed through for 0 hours.
  • the H 2 TaF 7 solution 10001 after the addition was added to the synthesis tank synthesis, where the effective volume of the synthesis tank was 13001.
  • potassium nitrate was added at about 27.3 Kg and KC1 at 20 Kg (i.e., N1 was 0.6 and N2 was 0.6). Then open the stirring paddle, add HF 53 liters to adjust the acidity to 1.55mol / l, steaming for heat preservation, holding time 30min, after the end of the heat, the synthesis solution ⁇ cooling tank for cooling crystallization, cooling time 24h. After cooling and crystallization, the crystals are placed in a centrifuge, and the crystals are rinsed with pure water, centrifuged, and the separation liquid is treated together with the mother liquor. After separation, the crystal is crystallization, and then dried twice. The first time, the far-infrared dryer is used, and the drying temperature is 150 ⁇ . After the drying is finished, the second drying is continued, and the vacuum drying is performed, and the drying temperature is 300. C, after drying, enter the sodium reduction process.
  • the H 2 TaF 7 having a concentration of 50 g/K of 0.9 mol/l was dissolved in the tank, and the air was condensed and the time was 0 h.
  • the H 2 TaF 7 solution 10001 after the addition was added to the synthesis tank synthesis, where the effective volume of the synthesis tank was 13001.
  • potassium acid was added at about 16.4 Kg and KC 128 Kg (i.e., N1 was 0.84 and N2 was 0.36). Then open the stirring paddle, add HF 53 liters to adjust the acidity to 1.55mol / l, pass steam to keep warm, the holding time is 35min, after the end of the heat preservation, the synthetic liquid cooling tank is cooled and crystallized, and the crystallization cooling tank is cooled by external circulation of circulating water. Cooling time 30h. After cooling and crystallizing, the crystal is placed in a centrifuge, plus The pure water is rinsed and crystallized, centrifuged, and the separation liquid is treated together with the mother liquor.
  • a H 2 TaF 7 solution having a concentration of 50 g/K of 0.9 mol/l was placed in a stripping tank, and compressed air was passed through for 0 hours.
  • the H 2 TaF 7 solution 10001 after the addition was added to the synthesis tank synthesis, where the effective volume of the synthesis tank was 13001.
  • KC1 40Kg was added (i.e., N1 was 1.2 , and N2 was 0). Then open the stirring paddle, add HF 53 liters to adjust the acidity to 1.55mol / l, steaming for heat preservation, holding time 40min, after the end of the heat preservation, the cooling solution is cooled and crystallized, and the crystal cooling tank is cooled by external circulation of circulating water. After cooling for 30 hours, the crystals are placed in a centrifuge, and the crystals are rinsed with pure water, centrifuged, and the separation liquid is treated together with the mother liquor. After separation, the crystal is crystallization, and then dried twice. The first time, the far-infrared dryer is used, the drying temperature is 150, and the second drying is continued after the drying is completed. The drying is performed by vacuum spinning, and the drying temperature is 300 ⁇ . After drying, it enters the sodium reduction process.
  • FSSS represents the Fourier particle size of the particles.
  • the apparent density of powders of SBD powder refers to the bulk density measured after the powder is filled under standard conditions, that is, the mass per unit volume when the powder is filled, expressed in g /cm 3 . It is a process property of powder.
  • the measurement method used here is the funnel method, even if the powder is free to fall from the funnel hole to a full height to fill the cup.
  • +80 (%) indicates the ratio of particles larger than 80 mesh to the total particles
  • -400 (%) indicates the ratio of particles smaller than 400 to all particles.
  • the mesh refers to the number of meshes per inch (25.4 mm) of the screen.
  • Table 2 Main element content in 4 ⁇ (unit: ppm)
  • Example 4 5810 37 980 18 12 162 36 Comparative Example 5 6560 38 460 17 15 165 38
  • the detection methods of the elements in the bismuth powder are all derived from GB/T 15076.8-2008, GB/T 15076.9-2008, GB/T 15076.12-2008. , GB/T 15076.14-2008, GB/T 15076.15-2008, GB/T 15076.16-2008, "Chemical Analysis Methods" and other national standards.
  • the method and equipment for testing the electrical properties of tantalum powder refer to the national standard GB/T 3137-2007, "Test method for electrical properties of tantalum powder”.
  • Vf: 20V means energization at a voltage of 20V.
  • D pressure: 5.0g / cc means that the anode block has a compact density of 5.0g / cc.
  • ⁇ 10- 4 ( ⁇ / ⁇ ) representative of leakage current hereinafter referred ⁇ values. Since the capacitance can not be absolutely non-conductive, when the capacitor is applied with a DC voltage, the capacitor will have leakage current. If the leakage current is too large, The capacitor will be damaged by heat. Applying a rated DC operating voltage to the capacitor will observe that the change in charging current begins to increase, decreases over time, and reaches a more stable state at a certain final value. This final value current is called leakage current.
  • CV (FV/g) represents the specific capacity, that is, the amount of electricity that can be discharged per unit weight of the battery or active material.
  • Tg6 (%) represents the loss of the capacitor.
  • the loss of the capacitor is actually the reactive power consumed by the capacitor, so it can also be defined as follows:
  • the loss of the capacitor also refers to the ratio of the reactive power consumed by the capacitor under the electric field to the total power consumed.
  • SHV (%) represents the volumetric shrinkage of the capacitor anode block.
  • the analytical data show that the nitrogen doping in the potassium fluoroantimonate used for the manufacture can also improve the performance of the capacitor grade tantalum powder as well as the direct doping of nitrogen. As the amount of nitrogen increases, the specific volume increases, the leakage current decreases, and the loss decreases, indicating that the electrical performance is expected to increase.
  • the method of the invention can achieve nitrogen doping in the process, and can effectively control the nitrogen content in the process, and the obtained product is satisfactory.

Abstract

A method of adding part nitrogen-containing salts in the synthetic process of potassium fluotantalate is provided. Since the procedure of nitrogen doping is conducted during the synthetic process of potassium fluotantalate, the nitrogen content that is more uniform than those obtained from other methods is obtained, and moreover, nitrogen is doped at the early stage, so primary particles are directly affected and accordingly become finer, the specific volume of tantalum powder is higher, and smaller leakage current and loss are realized. The method improves the qualified rate of capacitor products.

Description

一种高氮含量电容器级钽粉的制备方法及 由其制得的钽粉及钽电容器 技术领域  Preparation method of high-nitrogen capacitor grade bismuth powder and bismuth powder and tantalum capacitor prepared thereby
本发明涉及高比容电容器级钽粉及高比容电容器制作领域。 背景技术  The invention relates to the field of high specific capacitance capacitor grade tantalum powder and high specific capacitance capacitor fabrication. Background technique
金属钽是一种阀金属, 它可以在表面生成一层致密的氧化膜而具有单向导 电的性质。 由钽制成的阳极膜化学性能稳定 (特别是在酸性电解质中稳定)、电阻
Figure imgf000002_0001
介电常数大 (27.6)、 漏电流小。 另外还具有工作温度范围 宽(-80 ~ 200 )、 可靠性高、 抗震和使用寿命长等优点。 是制作体积小、 可靠性 高的钽电容器的理想材料。
Metal ruthenium is a valve metal that forms a dense oxide film on the surface and has a unidirectional conductive property. Anode film made of tantalum is chemically stable (especially stable in acidic electrolytes), electrical resistance
Figure imgf000002_0001
The dielectric constant is large (27.6) and the leakage current is small. In addition, it has a wide operating temperature range (-80 ~ 200), high reliability, shock resistance and long service life. It is an ideal material for making small and reliable tantalum capacitors.
钽电容器是一种以钽为金属阳极通过阳极氧化在钽表面直接生成介电氧化 膜的电子器件。 钽粉的比表面积很高, 即便在压制和烧结之后由于它特殊的孔 隙结构仍然保持很高的比表面积, 于是得到电容器的高比 (电)容。  Tantalum capacitors are electronic devices in which a tantalum metal anode is used to directly form a dielectric oxide film on the tantalum surface by anodization. The specific surface area of the tantalum powder is high, and even after pressing and sintering, a high specific surface area is maintained due to its special pore structure, so that a high ratio (electrical) capacity of the capacitor is obtained.
在制^ ^的工艺中, 氟钽酸钾钠还原工艺是目前 界应用最广, 技术 开发最成熟的一种生产工艺。  In the process of manufacturing ^ ^, the potassium fluoroantimonate sodium reduction process is the most widely used and the most mature technology in the current production process.
氟钽酸钾钠还原工艺, 又称为火法还原工艺, 其是采用 K2TaF7和 Na为主 要原料, 用 NaCl、 KC1等卤盐或卤盐混合物作稀释剂制备出电容器级 的一 种方法, 其主要反应机理如下: The potassium fluoroantimonate sodium reduction process, also known as the pyrometallurgical reduction process, is a capacitor grade prepared by using K 2 TaF 7 and Na as main raw materials, using a halogen salt such as NaCl or KC1 or a mixture of halogen salts as a diluent. The main reaction mechanism of the method is as follows:
K2TaF7+5Na = Ta+5NaF+2KF (1) 在氩气保护和一定的温度下, K2TaF7与液态钠发生上述反应。 将还原得到 的钽粉经过水洗和酸洗后进行热处理,然后经镁还原脱氧即得到最终高纯钽粉。 K 2 TaF 7 +5Na = Ta+5NaF+2KF (1) K 2 TaF 7 reacts with liquid sodium under argon gas protection and at a certain temperature. The reduced tantalum powder is subjected to heat treatment after washing with water and pickling, and then deoxidized by magnesium to obtain a final high-purity tantalum powder.
传统上, K2TaF7通过氣钽酸和 KC1来合成制备。 在氣钽酸中加入 KC1以 合成 K2TaF7, 发生下列反应: Traditionally, K 2 TaF 7 has been synthesized by the synthesis of gas phthalic acid and KC1. KC1 was added to gas citrate to synthesize K 2 TaF 7 , and the following reaction occurred:
H2TaF7 + 2KC1 = K2TaF7 + HC1 (2) 具体½为, 在 H2TaF7中加入 KC1, 加入 HF调节^ L, 搅拌均匀, 进行 保温,保温时间不少于 20分钟,保温结束后冷却结晶, 洗涤, 在 120 ~ 160'C烘 干, 得到氣钽酸钾粉末。 H 2 TaF 7 + 2KC1 = K 2 TaF 7 + HC1 (2) Specifically, KC1 is added to H 2 TaF 7 , HF is added to adjust L L , the mixture is evenly stirred, and the heat preservation time is not less than 20 minutes. After the heat preservation, the crystal is cooled, washed, and dried at 120 to 160 ° C. A potassium citrate powder was obtained.
更为详细的氟钽酸钾的合成方法, 以及火法还原制备钽粉的方法可以参考 1982年冶金工业出 土出版的、 由幸良佐等编著的《钽铌冶金》, 1986年出版 的、 由吴铭等编著的《钽铌冶金工艺学》以及 2009年冶金工业出 土出版的、 由郭青蔚等编著的《现代钽铌冶金》。  A more detailed method for synthesizing potassium fluoroantimonate and a method for preparing bismuth powder by fire method can be referred to the 钽铌 Metallurgical Industry unearthed in 1982, published by Xing Liangzuo, etc., published in 1986 by Wu Ming et al., "The Metallurgical Technology of Minmetals" and the "Modern Metallurgy" edited by Guo Qingwei and others, which was unearthed in the metallurgical industry in 2009.
目前电容器级钽粉正朝着高比容、 高纯度的方向发展。 众所周知, 钽粉的 比容和其比表面积成正比, 即钽粉的平均粒径越小, 比表面积越大, 比容越高。 实施钽粉的高比容化, 其关键技术是制得平均粒径较小的钽粉。 对于氟钽酸钾 钠还原工艺来说, 研究的核心是通过控制还原条件, 包括氟钽酸钾和稀释剂溶 盐的成分、 还原温度、 钠注入的速率等来控制纳还原过程中晶核的形成、 分布 与长大, 制备所期望的具有一定比表面积和粒径的钽粉。 机械方法是通过控制 氢化制粉或球磨条件, 获得较细颗粒的钽粉, 卤化物的氢还原法采用纳米级粉 末的制备技术, 制备的钽 ^度处于纳米级, 具有很大的比表面积。  At present, capacitor-grade tantalum powder is developing in the direction of high specific volume and high purity. It is well known that the specific volume of tantalum powder is proportional to its specific surface area, that is, the smaller the average particle size of tantalum powder, the larger the specific surface area and the higher the specific volume. To achieve high specific volume of tantalum powder, the key technology is to produce tantalum powder with a smaller average particle size. For the sodium fluoroantimonate sodium reduction process, the core of the study is to control the nucleation of the nano-reduction process by controlling the reduction conditions, including the composition of the potassium fluoroantimonate and the diluent dissolved salt, the reduction temperature, the rate of sodium injection, and the like. Forming, distributing and growing, the desired tantalum powder having a certain specific surface area and particle size is prepared. The mechanical method is to obtain finer particles of tantalum powder by controlling the conditions of hydrogenation milling or ball milling. The hydrogen reduction method of the halide adopts the preparation technology of nanometer powder, and the prepared degree of 钽 is in the nanometer order and has a large specific surface area.
掺杂是钽粉高比容化的重^ t施,为高比容钽粉生产和研究 遍采用, 在制^ ¼粉的工艺过程中进行掺杂, 其主要目的一是细化钽粉, 二是在高温处 理时能抑制钽粉晶粒的长大, 最大可能地保持钽粉具有较高的比表面积, 减少 钽粉比容的损失。 掺杂可以在不同工艺过程中进行。 常见的掺杂元素有 N、 Si、 P、 B、 C、 S、 Al、 O等及其化合物。 掺杂元素一般在晶界表面偏聚, 在高温时 和钽反应形成各种钽的化合物, 掺杂不仅在工艺的一个工序中掺入一种元素, 而且可以实施多工序多元素的掺杂。 这样不仅可以细化钽粉, 同时可以减少钽 粉的比容损失。  Doping is a high specific volume of tantalum powder. It is used in the production and research of high specific volume tantalum powder. It is doped in the process of making 1⁄4 powder. The main purpose is to refine the tantalum powder. The second is to inhibit the growth of the tantalum powder grains during high temperature treatment, and to maximize the possible specific surface area of the tantalum powder and reduce the loss of tantalum powder specific volume. Doping can be carried out in different processes. Common doping elements are N, Si, P, B, C, S, Al, O, etc. and their compounds. The doping element is generally segregated at the grain boundary surface, and reacts with cerium at a high temperature to form various cerium compounds. Doping not only incorporates one element in one process of the process, but also multi-step multi-element doping. This not only refines the tantalum powder, but also reduces the specific volume loss of the tantalum powder.
在钽粉中掺氮是目前 行业、 特别是高比容 生产中普遍流行的一种 做法。  Nitrogen doping in tantalum powder is a popular practice in the industry, especially in high specific volume production.
美国专利 US6876542提出一种含氮金属粉末的制备方法以及用该金属粉末 制得的多孔烧结体和固体电解电容器, 该专利提出一种含氮金属粉末, 其含氮 量 W (ppm)和用 BET法测定的比表面积 S (m2/g)的比 W/S为 500 - 3000。该专利还 提出一种在还原 ½中通入氮气从而提高 中的氮含量的方法。 US Pat. No. 6,875,542 proposes a method for preparing a nitrogen-containing metal powder and using the metal powder The obtained porous sintered body and solid electrolytic capacitor, the patent proposes a nitrogen-containing metal powder having a nitrogen content W (ppm) and a specific surface area S (m 2 /g) measured by the BET method, W/S ratio 500 - 3000. The patent also teaches a method of introducing nitrogen into the reduction to increase the nitrogen content.
美国专利 US7066975提出了一种含氮金属粉末及其制备方法以及用该金属 粉末制得的多孔烧结体和固体电解电容器。该专利提出一种含有 50 ~ 20,000ppm 固溶体形式氮的含氮金属粉末, 特别是钽, 优逸含有?、 B、 O或其組合, 其特 征是氮是以固溶体形式存在, 含氮金属粉末平均粒径为 80 ~ 360nm。  U.S. Patent No. 7,066,975 discloses a nitrogen-containing metal powder, a process for the preparation thereof, and a porous sintered body and a solid electrolytic capacitor obtained by using the metal powder. This patent proposes a nitrogen-containing metal powder containing 50 to 20,000 ppm of solid solution nitrogen, especially yttrium, which contains ? , B, O or a combination thereof, characterized in that nitrogen is present in the form of a solid solution, and the average particle diameter of the nitrogen-containing metal powder is from 80 to 360 nm.
美国专利 US7473294提出了一种含氮的金属粉末及其制备方法以及用此金 属粉末制备的多孔烧结体和电解电容器。 该专利提出一种以固溶体的形式含氮 50 ~ 20,000ppm的含氮的金属粉末(有^g■和内层),所述氮是固溶的形式,所述 的金属是钽, 所述的氮气从所述金属的 ^^均匀的渗入到内层, 所述金属粉末 的粒径≤250腿。  U.S. Patent No. 7,473,294 discloses a nitrogen-containing metal powder, a process for the preparation thereof, and a porous sintered body and electrolytic capacitor prepared using the metal powder. The patent proposes a nitrogen-containing metal powder (having a gas and an inner layer) containing 50 to 20,000 ppm of nitrogen in the form of a solid solution, the nitrogen being in a solid solution form, the metal being ruthenium, The nitrogen gas is uniformly infiltrated into the inner layer from the metal, and the metal powder has a particle diameter of ≤ 250 legs.
美国专利 US6432161提出了另一种含氮的金属粉 其制备方法以及用此 金属粉末制备的多孔烧结体和电解电容器。 该专利提出了一种生产含氮金属粉 末的方法, 包括用还原剂还原铌或钽的化合物, 同时向反应系统中 ϋ>ν含氮气 体, 生成以固溶体形式存在的含氮的铌或钽, 氮同时掺入到铌或钽中。 该专利 是在钠还原氟钽酸钾方法以外的一个扩展, 使其适用于其它铌或钽的化合物还 原掺氮。  U.S. Patent No. 6,432,161 discloses another method for preparing a nitrogen-containing metal powder and a porous sintered body and electrolytic capacitor prepared using the metal powder. The patent proposes a method for producing a nitrogen-containing metal powder, which comprises reducing a ruthenium or osmium compound with a reducing agent, and simultaneously introducing a nitrogen gas to the reaction system to form a nitrogen-containing ruthenium or osmium in the form of a solid solution. Nitrogen is simultaneously incorporated into the ruthenium or osmium. This patent is an extension of the sodium reduction fluoroantimonate method to make it suitable for other ruthenium or osmium compounds to be nitrogen-doped.
中国专利申请 CN1498144A涉及一种生产烧结粒料的方法,该颗粒由难熔金 属和难熔金属氮化物混合制成, 发现比由难熔金属或难熔金属氮化物单独制成 的那些有更高比例的内聚集孔隙, 得到改善的电容器级粉末, 阳极和由此制成 电容嚣。 当混合物是在 50-75 W/W%难熔金属氮化物范围时, 粒料孔隙率和总 ^体积最大化。 总粒料孔隙表面积相对独立于难熔金属氮化物的超过 50%浓 度。 由 50/50或 25〃5 \¥/\¥%难熔金属 /难熔金属氮化物粉末混合物构成的基底 将生产有更高的电容恢复率和较低的 ESR的固体电容器。 简言之, 就是用钽和 氮化钽或铌或氮化铌直接混合, 然后压制成型, 制作电容器的阳极。 由此可见, 现有技术中采用的在钽粉中掺氮的方法集中于向反应系统中通 入含氮气体, 氮以固溶的形式存在于 中。 但是该掺氮方法有效性低, 无法 得到高氮含量的钽粉, 并且无法准确控制掺氮量, 因此仍需要效果好且可控性 强的钽粉掺氮工艺。 发明内容 Chinese patent application CN1498144A relates to a method for producing sintered pellets which is prepared by mixing a refractory metal and a refractory metal nitride and found to be higher than those made of refractory metal or refractory metal nitride alone. The proportion of the inner aggregated pores results in an improved capacitor grade powder, an anode and thus a capacitor crucible. When the mixture is in the range of 50-75 W/W% refractory metal nitride, the pellet porosity and total volume are maximized. The total pellet pore surface area is relatively independent of the 50% concentration of the refractory metal nitride. A substrate consisting of a 50/50 or 25〃5 \¥/\¥% refractory metal/refractory metal nitride powder mixture will produce a solid capacitor with a higher capacitance recovery and lower ESR. In short, it is directly mixed with tantalum nitride or tantalum or tantalum nitride, and then press molded to form the anode of the capacitor. Thus, the method of nitrogen doping in tantalum powder used in the prior art focuses on introducing a nitrogen-containing gas into the reaction system, and nitrogen is present in a solid solution. However, the nitrogen-doping method has low effectiveness, cannot obtain high-content nitrogen powder, and cannot accurately control the nitrogen-doping amount. Therefore, a niobium-doped nitrogen-doping process with good effect and high controllability is still needed. Summary of the invention
本发明的目的是提供高氮含量钽粉及其制备方法、 以及由该钽粉制造的钽 电容器。 并且, 钽粉中的氮含量能够准确控制。  SUMMARY OF THE INVENTION An object of the present invention is to provide a high nitrogen content tantalum powder, a method for preparing the same, and a tantalum capacitor produced from the tantalum powder. Moreover, the nitrogen content in the tantalum powder can be accurately controlled.
本发明的目的通过以下方面来实现。  The object of the present invention is achieved by the following aspects.
本发明的第一方面, 提供了一种钽粉的制备方法, 其包括以下步骤:  In a first aspect of the invention, a method of preparing a tantalum powder is provided, comprising the steps of:
(a)向 H2TaF7溶液中加入 KN03或者 KN03与 KC1的混合物; (a) adding KN0 3 or a mixture of KN0 3 and KC1 to the H 2 TaF 7 solution;
(b)调节 J½液 , 进行保温;  (b) adjusting the J1⁄2 liquid for heat preservation;
(c)冷却结晶, 得到 K2TaF7粉末; (c) cooling the crystals to obtain a K 2 TaF 7 powder;
(d)使用由步骤 (c)得到的 K2TaF7粉末,利用氣钽酸钾钠还原工艺制备 4¾盼。 本发明通过在氟钽酸钾的合成过程中加入部分含氮的盐类, 使得掺氮过程 在氟钽酸钾的合成过程中进行, 比传统方法掺氮更加均匀。 并且由于氮是在前 期掺入的, 因此直接影响了一次粒子, 使一次粒子更细, 钽粉的比容更高, 漏 电流和损耗更小。 因此提高了电容器产品的合格率。 (d) Using the K 2 TaF 7 powder obtained in the step (c), the preparation was carried out by a potassium phthalate sodium reduction process. The invention adds a nitrogen-containing salt in the synthesis process of potassium fluoroantimonate, so that the nitrogen-doping process is carried out in the synthesis process of potassium fluoroantimonate, which is more uniform than the conventional method. And because nitrogen is incorporated in the early stage, it directly affects the primary particles, making the primary particles finer, the specific volume of the tantalum powder higher, and the leakage current and loss are smaller. Therefore, the pass rate of the capacitor product is improved.
本发明第一方面的步骤 (d)中的氣钽酸钾钠还原工艺即为现有技术中所通常 采用的工艺, 具体可参见背景技术部分的说明。 还原后的物料可以经过破碎、 水洗和 /或酸洗等常^ ½处理方法。  The sodium bismuth citrate reduction process in the step (d) of the first aspect of the present invention is a process generally employed in the prior art, and can be specifically referred to the description in the background section. The reduced material can be subjected to a conventional treatment such as crushing, washing, and/or pickling.
在一个实施方案中,在步骤 (a)中,根据式 (4)和 (5)来计算 KN03和 KC1的用 量: In one embodiment, in step (a), the amounts of KN0 3 and KC1 are calculated according to formulas (4) and (5):
KC1用量 (g) = H2TaF7溶液浓度 (g/l)xH2TaF7溶液体积 (1)ΧΟ·67ΧΝ1 The amount of KC1 (g) = concentration of solution of H 2 TaF 7 (g / l ) xH 2 TaF 7 solution volume (1) ΧΟ · 67ΧΝ1
(4) (4)
KN03用量 (g) = H2TaF7溶液含量 (g/l)xH2TaF7溶液体积 (1)X0.91XN2 其中, Nl+N2 = l.l ~ 1.3, 且 N2不为 0。 KN0 3 dosage (g) = H 2 TaF 7 solution content (g / l) x H 2 TaF 7 solution volume (1) X0.91XN2 Where Nl+N2 = ll ~ 1.3, and N2 is not 0.
需要说明的是, 0.67与 0.91为 KC1与硝酸钾的分子量比值。  It should be noted that 0.67 and 0.91 are molecular weight ratios of KC1 to potassium nitrate.
在一个实施方案中, 在步骤 (a)中, 加入 KN03或者 KN03与 KC1的混合物 之前, 将 H2TaF7溶液的酸度调节至 0.7 - 1.2mol/l。 In one embodiment, in step (a), the acidity of the H 2 TaF 7 solution is adjusted to 0.7 - 1.2 mol/l before the addition of KN0 3 or a mixture of KN0 3 and KC1.
在一个实施方案中, 在步骤 (b)中, 使用 HF调节反应液酸度。 在一个实施 方案中,在步骤 (b)中,将反应液酸度调节至 1.2 - 1.65mol/l。在一个实施方案中, 在步骤 (b)中, 保温时间不少于 20分钟。 在一个实施方案中, 在步骤 (c)中, 冷 却结晶后还对产物进行烘干。在一个实施方案中,烘干包括在 120 ~ 160。C烘干。 在一个实施方案中, 烘干还包括在 250 - 350'C的第二次烘干。  In one embodiment, in step (b), the pH of the reaction solution is adjusted using HF. In one embodiment, in step (b), the acidity of the reaction liquid is adjusted to 1.2 - 1.65 mol/l. In one embodiment, in step (b), the holding time is not less than 20 minutes. In one embodiment, in step (c), the product is also dried after cooling and crystallization. In one embodiment, the drying is included at 120-160. C drying. In one embodiment, the drying also includes a second drying at 250 - 350 'C.
本发明的第二方面,提供了根据本发明第一方面的制备方法所制得的钽粉。 本发明的第三方面,提供了由根据本发明第二方面的钽粉制造的钽电容器。 本发明的钽粉及由其制造的钽电容器中, 氮含量高,且掺氮量可准确控制, 因此电学性能优于现有技术中的钽粉和钽电容器。  According to a second aspect of the invention, there is provided a tantalum powder obtained by the production method according to the first aspect of the invention. According to a third aspect of the invention, there is provided a tantalum capacitor manufactured from tantalum powder according to the second aspect of the invention. In the tantalum powder of the present invention and the tantalum capacitor manufactured therefrom, the nitrogen content is high, and the nitrogen doping amount can be accurately controlled, so that the electrical performance is superior to the tantalum powder and tantalum capacitors in the prior art.
上述各个实施方案可以根据需要进行組合, 所得到的技术方案仍处于本发 明的范围内。 发明详述  The various embodiments described above can be combined as needed, and the resulting technical solution is still within the scope of the present invention. Detailed description of the invention
本发明提供了一种制造高氮含量钽粉末的方法, 包括如下步骤:  The present invention provides a method of producing a high nitrogen content niobium powder, comprising the steps of:
在氣钽酸钾的生产½中, 使用 KN03部分或 4^代替 KC1合成 K2TaF7, 发生下列 In the production of potassium citrate, using KN0 3 moiety or 4^ instead of KC1 to synthesize K 2 TaF 7 , the following occurs
H2TaF7 + 2KN03= K2TaF7+HN03 (3) 具体½为, 对 H2TaF7溶液调节^ L至 0.7 - 1.2mol/l后, 加入 KN03和 / 或 KC1, 并根据式 (4)和 (5)来计算 KN03和 KC1的用量: H 2 TaF 7 + 2KN0 3 = K 2 TaF 7 +HN0 3 (3) Specifically, after adjusting the H 2 TaF 7 solution to 0.7 - 1.2 mol / l, add KN0 3 and / or KC1, and according to Equations (4) and (5) are used to calculate the amount of KN0 3 and KC1:
KC1用量 (g) = H2TaF7溶液浓度 (g/l)xH2TaF7溶液体积 (1)ΧΟ·67ΧΝ1 The amount of KC1 (g) = concentration of solution of H 2 TaF 7 (g / l ) xH 2 TaF 7 solution volume (1) ΧΟ · 67ΧΝ1
(4) (4)
KN03用量 (g) = H2TaF7溶液含量 (g/l)xH2TaF7溶液体积 (1)X0.91XN2 其中, N1+N2 = 1.1 - 1.3, 且 N2不为 0; 0.67与 0.91为 KC1与硝酸钾的分 子量比值。 KN0 3 dosage (g) = H 2 TaF 7 solution content (g / l) x H 2 TaF 7 solution volume (1) X0.91XN2 Wherein, N1+N2 = 1.1 - 1.3, and N2 is not 0; 0.67 and 0.91 are molecular weight ratios of KC1 to potassium nitrate.
加入 HF将反应液酸度调节至 1.2 ~ 1.65mol/l, 搅拌均匀, 进行保温, 保温 时间不少于 20分钟,保温结束后冷却结晶, 洗涤,在 120 ~ 160'C烘干,任选进 行在 250 ~ 350。C的第二次烘干, 得到 K2TaF7粉末。 分析 K2TaF7中的 N含量, 合成得到的 K2TaF7针状很细。 Add HF to adjust the acidity of the reaction solution to 1.2 ~ 1.65mol / l, stir evenly, heat preservation, heat preservation time is not less than 20 minutes, after cooling, crystallize, wash, dry at 120 ~ 160 'C, optionally in 250 ~ 350. The second drying of C gave K 2 TaF 7 powder. Analysis of the N content of 2 TaF 7 K, to obtain the synthesis of K 2 TaF 7 very fine needles.
在式 (1)的火法还原阶段, 以用 KN03生产的氣钽酸钾替代用 KC1合成的 K2TaF7。 其余如 NaCl、 KC1、 KF等熔盐体系的种类和量, 以及还原添加剂和 还原工艺糾都按照现有技术中的常规工艺。 结^得到经过均匀掺 氮的 原粉。 这样 可以得到粒 细的一次 子。 In the fire reduction stage of the formula (1), K 2 TaF 7 synthesized with KC1 was replaced with potassium citrate produced by KN0 3 . The remaining types and amounts of molten salt systems such as NaCl, KC1, KF, and the reducing additives and reduction processes are all in accordance with conventional processes in the prior art. The result is a raw powder which is uniformly nitrogen-doped. This gives a fine grain of the first time.
接着还原后的物料经破碎、 水洗、 酸洗等步骤, 得到所需的掺氮产品。 为了进一步说明本发明, 下面结合实施例和附表对本发明实施方案进行描 述, 但应当理解, 这些描述只是为进一步说明本发明的特征和优点, 而不是对 本发明权利要求范围的限制。 实施例 1:  Then, the reduced material is subjected to steps of crushing, washing, pickling, etc. to obtain a desired nitrogen-doping product. In order to further illustrate the invention, the embodiments of the present invention are described in the accompanying drawings and the accompanying drawings. Example 1:
将浓度为 50g/K 为 0.9mol/l的 H2TaF7溶¾ 入? 槽中, ϋΛ^·缩空 气进行^, ^时间 6h。 的目的是将溶解在 H2TaF7溶液中的部分有机 ^目浮至?^槽内溶液上层抽走, 这样可有效降低最终氟钽酸钾中碳含量。 将 ^k 后的 H2TaF7溶液 10001加入合成槽, 这里合成槽的有效容积是 13001。 H 2 TaF 7 having a concentration of 50 g/K of 0.9 mol/l was dissolved in a tank, and the air was condensed for ^6 time. The purpose is to float part of the organic solution dissolved in the H 2 TaF 7 solution to? The upper layer of the solution in the tank is pumped away, which can effectively reduce the carbon content in the final potassium fluoroantimonate. The H 2 TaF 7 solution 10001 after ^k was added to the synthesis tank, where the effective volume of the synthesis tank was 13001.
该实施例中加入硝酸钾约 54.6kg (即 m为 0, N2为 1.2)。然后开启搅拌桨, 加入 HF 53升将酸度调整到 1.55mol/l。 通入蒸汽进行保温, 保温时间 20min。 保温结束后将合成液 ^UV冷却槽进行冷却结晶, 冷却时间 24h。 冷却结晶后将 结晶;^离心机, 加纯水淋洗结晶, 离心分离, 将分离液与母液共同处理。 分 离后结晶, 然后再进行 2次烘干, 第 1次采用远红外烘干机, 烘干温度 150。C, 烘干结束后继续进行第 2次烘干,采用真空旋转烘干,烘干温度 300eC,烘干后 ¾ 钠还原工序。 This embodiment of potassium nitrate was added from about 5 4 .6k g (i.e., m is 0, N 2 is 1.2). Then, the stirring paddle was turned on, and the acidity was adjusted to 1.55 mol/l by adding HF 53 liter. Insulation is carried out by steaming, and the holding time is 20 min. After the completion of the heat preservation, the synthetic liquid UV cooling tank was cooled and crystallized, and the cooling time was 24 hours. After cooling and crystallization, it will be crystallized; centrifuge, rinse with pure water, centrifuge, and separate the separation solution with the mother liquor. Crystallization after separation, and then drying twice, the first use of far infrared dryer, drying temperature 150. C, after the drying is finished, continue the second drying, using vacuum rotary drying, drying temperature 300 e C, after drying 3⁄4 sodium reduction process.
在还原炉中装入 KC1 120kg, KF 100kg, 然后按设定的程序升温, 当温度 达到 900。C时从进料口加入 K2TaF7 50Kg。 进料后升温至 930。C, 开始计算保温 时间。 保温 lh后, 提升搅拌桨 10cm, 吹风降温至 820。C, 然后开始平稳注入钠, 边 搅拌, ^¾度^ 在900 ^。 其中加 ΛJ^J½的钠量是 16Kg。 i£ 原^½结^, 、 出炉。 接着, 将还原后的物料经破碎、 水洗、 酸洗、 团化 等步骤, 得到所需的掺氮产品。 实施例 2: Install KC1 120kg, KF 100kg in the reduction furnace, and then heat up according to the set program, when the temperature reaches 900. At time C, K 2 TaF 7 50 Kg was added from the feed port. The temperature was raised to 930 after the feed. C, start calculating the holding time. After lh holding, raise the stirring paddle 10cm, and cool down to 820. C, then start to inject sodium smoothly, while stirring, ^3⁄4 degrees ^ at 900 ^. The amount of sodium added to J^J1⁄2 is 16Kg. i£ Original ^1⁄2 knot ^, , and baked. Then, the reduced material is subjected to steps of crushing, washing, pickling, agglomeration, and the like to obtain a desired nitrogen-doping product. Example 2:
将浓度为 50g/K 为 0.9mol/l的 H2TaF7溶¾ 入? 槽中, ϋΛ^·缩空 气进行^, 时间 0h。 将^后的 H2TaF7溶液 10001加入合成槽合成, 这 里合成槽的有效容积是 13001。 The H 2 TaF 7 having a concentration of 50 g/K of 0.9 mol/l was dissolved in the tank, and the air was condensed and the time was 0 h. The H 2 TaF 7 solution 10001 after the addition was added to the synthesis tank synthesis, where the effective volume of the synthesis tank was 13001.
该实施例中加入硝酸钾约 38.2Kg和 KC1 12Kg (即 N1为 0.36, N2为 0.84)。 然后开启搅拌桨, 加入 HF 53升将酸度调整到 1.55mol/l, 通入蒸汽进行保温, 保温时间 30min,保温结束后将合成液^ 冷却槽进行冷却结晶,冷却时间 24h。 冷却结晶后将结晶放入离心机, 加纯水淋洗结晶, 离心分离, 将分离液与母液 共同处理。 分离后结晶, 然后再进行 2次烘干, 第 1次采用远红外烘干机, 烘 干温度 150Ό ,烘干结束后继续进行第 2次烘干,采用真空旋转烘干,烘干温度 300。C, 烘干后进入钠还原工序。  In this example, potassium nitrate was added at about 38.2 kg and KC1 at 12 kg (i.e., N1 was 0.36 and N2 was 0.84). Then open the stirring paddle, add HF 53 liters to adjust the acidity to 1.55mol / l, steaming for heat preservation, holding time 30min, after the end of the heat, the synthesis solution ^ cooling tank for cooling crystallization, cooling time 24h. After cooling and crystallization, the crystals are placed in a centrifuge, and the crystals are rinsed with pure water, centrifuged, and the separation liquid is treated together with the mother liquor. After separation, the crystal is crystallization, and then dried twice. The first time, the far-infrared dryer is used, and the drying temperature is 150 Ό. After the drying is finished, the second drying is continued, and the vacuum drying is performed, and the drying temperature is 300. C, after drying, enter the sodium reduction process.
在还原炉中装入 KC1 120kg, KF 100kg, 然后按设定的程序升温, 当温度 达到 900。C时从进料口加入 K2TaF7 50Kg。 进料后升温至 930。C, 开始计算保温 时间。 保温 lh后, 提升搅拌桨 10cm, 吹风降温至 820。C, 然后开始平稳注入钠, 边 搅拌, ^¾度^ 在900 ^。 其中加 ΛJ^J½的钠量是 16Kg。 i£ 原^½结^, 、 出炉。 接着, 将还原后的物料经破碎、 水洗、 酸洗、 团化 等步骤, 得到所需的掺氮产品。 实施例 3: Install KC1 120kg, KF 100kg in the reduction furnace, and then heat up according to the set program, when the temperature reaches 900. At time C, K 2 TaF 7 50 Kg was added from the feed port. The temperature was raised to 930 after the feed. C, start calculating the holding time. After lh holding, raise the stirring paddle 10cm, and cool down to 820. C, then start to inject sodium smoothly, while stirring, ^3⁄4 degrees ^ at 900 ^. The amount of sodium added to J^J1⁄2 is 16Kg. i£ Original ^1⁄2 knot ^, , and baked. Then, the reduced material is subjected to steps of crushing, washing, pickling, agglomeration, and the like to obtain a desired nitrogen-doping product. Example 3:
将浓度为 50g/K 为 0.9mol/l的 H2TaF7溶液加入吹脱槽中,通入压缩空 气进行^, 时间 0h。 将^后的 H2TaF7溶液 10001加入合成槽合成, 这 里合成槽的有效容积是 13001。 A H 2 TaF 7 solution having a concentration of 50 g/K of 0.9 mol/l was placed in a stripping tank, and compressed air was passed through for 0 hours. The H 2 TaF 7 solution 10001 after the addition was added to the synthesis tank synthesis, where the effective volume of the synthesis tank was 13001.
该实施例中加入硝酸钾约 27.3Kg和 KC1 20Kg (即 N1为 0.6, N2为 0.6)。 然后开启搅拌桨, 加入 HF 53升将酸度调整到 1.55mol/l, 通入蒸汽进行保温, 保温时间 30min,保温结束后将合成液^ 冷却槽进行冷却结晶,冷却时间 24h。 冷却结晶后将结晶放入离心机, 加纯水淋洗结晶, 离心分离, 将分离液与母液 共同处理。 分离后结晶, 然后再进行 2次烘干, 第 1次采用远红外烘干机, 烘 干温度 150Ό ,烘干结束后继续进行第 2次烘干,采用真空旋转烘干,烘干温度 300。C, 烘干后进入钠还原工序。  In this example, potassium nitrate was added at about 27.3 Kg and KC1 at 20 Kg (i.e., N1 was 0.6 and N2 was 0.6). Then open the stirring paddle, add HF 53 liters to adjust the acidity to 1.55mol / l, steaming for heat preservation, holding time 30min, after the end of the heat, the synthesis solution ^ cooling tank for cooling crystallization, cooling time 24h. After cooling and crystallization, the crystals are placed in a centrifuge, and the crystals are rinsed with pure water, centrifuged, and the separation liquid is treated together with the mother liquor. After separation, the crystal is crystallization, and then dried twice. The first time, the far-infrared dryer is used, and the drying temperature is 150 Ό. After the drying is finished, the second drying is continued, and the vacuum drying is performed, and the drying temperature is 300. C, after drying, enter the sodium reduction process.
在还原炉中装入 KC1 120kg, KF 100kg, 然后按设定的程序升温, 当温度 达到 900。C时从进料口加入 K2TaF7 50Kg。 进料后升温至 930。C, 开始计算保温 时间。 保温 lh后, 提升搅拌桨 10cm, ? SU^"温至 820。C, 然后开始平稳注入钠, 边 搅拌, ^¾度^ 在900 ^。 其中加 ΛJ^J½的钠量是 16Kg。 i£ 原^½结^, 、 出炉。 接着, 将还原后的物料经破碎、 水洗、 酸洗、 团化 等步骤, 得到所需的掺氮产品。 实施例 4: Install KC1 120kg, KF 100kg in the reduction furnace, and then heat up according to the set program, when the temperature reaches 900. At time C, K 2 TaF 7 50 Kg was added from the feed port. The temperature was raised to 930 after the feed. C, start calculating the holding time. After holding lh for heating, raise the stirring paddle 10cm, ? SU^" warm to 820. C, then start to inject sodium smoothly, while stirring, ^3⁄4 degrees ^ at 900 ^. The amount of sodium added to J^J1⁄2 is 16Kg. i£ original ^1⁄2 knot ^, , baked. Next, The reduced material is subjected to steps of crushing, washing, pickling, agglomeration, etc. to obtain a desired nitrogen-doping product.
将浓度为 50g/K 为 0.9mol/l的 H2TaF7溶¾ 入? 槽中, ϋΛ^·缩空 气进行^, 时间 0h。 将^后的 H2TaF7溶液 10001加入合成槽合成, 这 里合成槽的有效容积是 13001。 The H 2 TaF 7 having a concentration of 50 g/K of 0.9 mol/l was dissolved in the tank, and the air was condensed and the time was 0 h. The H 2 TaF 7 solution 10001 after the addition was added to the synthesis tank synthesis, where the effective volume of the synthesis tank was 13001.
该实施例中加 酸钾约 16.4Kg和 KC128Kg (即 N1为 0.84, N2为 0.36)。 然后开启搅拌桨, 加入 HF 53升将酸度调整到 1.55mol/l, 通入蒸汽进行保温, 保温时间 35min, 保温结束后将合成液 冷却槽进行冷却结晶, 结晶冷却槽 采取循环水外部循环冷却, 冷却时间 30h。 冷却结晶后将结晶放入离心机, 加 纯水淋洗结晶, 离心分离, 将分离液与母液共同处理。 分离后结晶, 然后再进 行 2次烘干,第 1次采用远红外烘干机,烘干温度 150。C,烘干结束后继续进行 2次烘干, 采用真空旋转烘干, 烘干温度 300。C, 烘干后进入钠还原工序。 In this example, potassium acid was added at about 16.4 Kg and KC 128 Kg (i.e., N1 was 0.84 and N2 was 0.36). Then open the stirring paddle, add HF 53 liters to adjust the acidity to 1.55mol / l, pass steam to keep warm, the holding time is 35min, after the end of the heat preservation, the synthetic liquid cooling tank is cooled and crystallized, and the crystallization cooling tank is cooled by external circulation of circulating water. Cooling time 30h. After cooling and crystallizing, the crystal is placed in a centrifuge, plus The pure water is rinsed and crystallized, centrifuged, and the separation liquid is treated together with the mother liquor. Crystallization after separation, and then drying twice, the first time using a far-infrared dryer, drying temperature 150. C. After the drying is finished, the drying is continued for 2 times, and the drying is performed by vacuum spinning, and the drying temperature is 300. C, after drying, enter the sodium reduction process.
在还原炉中装入 KC1 120kg, KF 100kg, 然后按设定的程序升温, 当温度 达到 900。C时从进料口加入 K2TaF7 50Kg。 进料后升温至 930。C, 开始计算保温 时间。 保温 lh后, 提升搅拌桨 10cm, ? SU^"温至 820。C, 然后开始平稳注入钠, 边 搅拌, ^¾度^ 在900 ^。 其中加 ΛJ^J½的钠量是 16Kg。 i£ 原^½结^, 、 出炉。 接着, 将还原后的物料经破碎、 水洗、 酸洗、 团化 等步骤, 得到所需的掺氮产品。 比较例 5: Install KC1 120kg, KF 100kg in the reduction furnace, and then heat up according to the set program, when the temperature reaches 900. At time C, K 2 TaF 7 50 Kg was added from the feed port. The temperature was raised to 930 after the feed. C, start calculating the holding time. After holding lh for heating, raise the stirring paddle 10cm, ? SU^" warm to 820. C, then start to inject sodium smoothly, while stirring, ^3⁄4 degrees ^ at 900 ^. The amount of sodium added to J^J1⁄2 is 16Kg. i£ original ^1⁄2 knot ^, , baked. Next, The reduced material is crushed, washed, pickled, agglomerated, etc. to obtain the desired nitrogen-doped product. Comparative Example 5:
将浓度为 50g/K 为 0.9mol/l的 H2TaF7溶液加入吹脱槽中,通入压缩空 气进行^, 时间 0h。 将^后的 H2TaF7溶液 10001加入合成槽合成, 这 里合成槽的有效容积是 13001。 A H 2 TaF 7 solution having a concentration of 50 g/K of 0.9 mol/l was placed in a stripping tank, and compressed air was passed through for 0 hours. The H 2 TaF 7 solution 10001 after the addition was added to the synthesis tank synthesis, where the effective volume of the synthesis tank was 13001.
该实施例中加入 KC1 40Kg (即 N1为 1.2, N2为 0)。 然后开启搅拌桨, 加 入 HF 53升将酸度调整到 1.55mol/l, 通入蒸汽进行保温, 保温时间 40min, 保 温结束后将合成液^冷却槽进行冷却结晶, 结晶冷却槽采取循环水外部循环 冷却, 冷却时间 30h, 冷却结晶后将结晶放入离心机, 加纯水淋洗结晶, 离心 分离, 将分离液与母液共同处理。 分离后结晶, 然后再进行 2次烘干, 第 1次 采用远红外烘干机,烘干温度 150 ,烘干结束后继续进行第 2次烘干,采用真 空旋转烘干, 烘干温度 300Ό , 烘干后进入钠还原工序。 In this example, KC1 40Kg was added (i.e., N1 was 1.2 , and N2 was 0). Then open the stirring paddle, add HF 53 liters to adjust the acidity to 1.55mol / l, steaming for heat preservation, holding time 40min, after the end of the heat preservation, the cooling solution is cooled and crystallized, and the crystal cooling tank is cooled by external circulation of circulating water. After cooling for 30 hours, the crystals are placed in a centrifuge, and the crystals are rinsed with pure water, centrifuged, and the separation liquid is treated together with the mother liquor. After separation, the crystal is crystallization, and then dried twice. The first time, the far-infrared dryer is used, the drying temperature is 150, and the second drying is continued after the drying is completed. The drying is performed by vacuum spinning, and the drying temperature is 300 Ό. After drying, it enters the sodium reduction process.
在还原炉中装入 KC1 120 kg, KF lOO kg, 然后按设定的程序升温, 当温度 达到 900。C时从进料口加入 K2TaF7 50Kg。 进料后升温至 930。C, 开始计算保温 时间。 保温 lh后, 提升搅拌桨 10cm, ? SU^"温至 820。C, 然后开始平稳注入钠, 边 搅拌, ^¾度^ 在900 ^。 其中加 ΛJ^J½的钠量是 16Kg。 i£ 原^½结^, 、 出炉。 接着, 将还原后的物料经破碎、 水洗、 酸洗、 团化 等步骤, 得到所需的掺氮产品。 Install KC1 120 kg, KF lOO kg in the reduction furnace, and then heat up according to the set program, when the temperature reaches 900. At time C, K 2 TaF 7 50 Kg was added from the feed port. The temperature was raised to 930 after the feed. C, start calculating the holding time. After holding lh for heating, raise the stirring paddle 10cm, ? SU^" warm to 820. C, then start to inject sodium smoothly, while stirring, ^3⁄4 degrees ^ at 900 ^. The amount of sodium added to J^J1⁄2 is 16Kg. i£ original ^1⁄2 knot ^, , baked. Next, The reduced material is crushed, washed, pickled, and agglomerated The steps are followed to obtain the desired nitrogen-doped product.
利用该反应体系对进行的五組实施例进行分析, 最终样品的性能对比结果 如下表。 表 1: 钽粉的各项物理性能  Five sets of examples were analyzed using the reaction system, and the results of the final sample were compared as shown in the following table. Table 1: Physical properties of tantalum powder
Figure imgf000011_0001
表 1中:
Figure imgf000011_0001
in FIG. 1:
FSSS代表 4 ^颗粒的费氏粒径。  FSSS represents the Fourier particle size of the particles.
SBD 粉末的松装密度 (apparent density of powders), 是指粉^规定 条件下自由充满标准容器后所测得的堆积密度, 即粉末 填装时单位体积的 质量,单位以 g/cm3表示,是粉末的一种工艺性能。这里采用的测量方法是漏斗 法, 即使粉末从漏斗孔按一定高度自由落下充满杯子。 The apparent density of powders of SBD powder refers to the bulk density measured after the powder is filled under standard conditions, that is, the mass per unit volume when the powder is filled, expressed in g /cm 3 . It is a process property of powder. The measurement method used here is the funnel method, even if the powder is free to fall from the funnel hole to a full height to fill the cup.
+80 (%)表示大于 80目的颗粒占全部颗粒的比例, -400 (%)表示小于 400 目的颗粒占全部颗粒的比例。 目指的是筛网每英寸 (25.4mm)长度上所具有的网 眼数。 表 2: 4 ^中主要元素含量 (单位: ppm)  +80 (%) indicates the ratio of particles larger than 80 mesh to the total particles, and -400 (%) indicates the ratio of particles smaller than 400 to all particles. The mesh refers to the number of meshes per inch (25.4 mm) of the screen. Table 2: Main element content in 4 ^ (unit: ppm)
Figure imgf000011_0002
实施例 4 5810 37 980 18 12 162 36 比较例 5 6560 38 460 17 15 165 38 钽粉中元素的检测方法全部来源于 GB/T 15076.8-2008、 GB/T 15076.9-2008、 GB/T 15076.12-2008、 GB/T 15076.14-2008、 GB/T 15076.15-2008、 GB/T 15076.16-2008、 《钽铌化学分析方法》等国家标准。
Figure imgf000011_0002
Example 4 5810 37 980 18 12 162 36 Comparative Example 5 6560 38 460 17 15 165 38 The detection methods of the elements in the bismuth powder are all derived from GB/T 15076.8-2008, GB/T 15076.9-2008, GB/T 15076.12-2008. , GB/T 15076.14-2008, GB/T 15076.15-2008, GB/T 15076.16-2008, "Chemical Analysis Methods" and other national standards.
2中数据可以看出, 生产氣钽酸钾时 使用硝酸钾获得了最高的掺 氮量 (实施例 1), 随着硝酸钾用量减少、 KC1用量增大, 掺氮量随之降低, 当全 部使用 KC1时掺氮量最低 (比较例 5)。可见本发明的掺氮效果好于传统的掺氮方 法, 通过本发明的方法可以获得高氮含量的钽粉。 表 3: 电学性能比较 (烧结 1270。C/10min Vf: 20V D压: 5.0g/cc)  It can be seen from the data in 2 that the highest nitrogen doping amount is obtained by using potassium nitrate when producing potassium citrate (Example 1), and as the amount of potassium nitrate is decreased and the amount of KC1 is increased, the nitrogen doping amount is reduced, when all The amount of nitrogen doping was the lowest when KC1 was used (Comparative Example 5). It can be seen that the nitrogen doping effect of the present invention is better than the conventional nitrogen doping method, and the high nitrogen content tantalum powder can be obtained by the method of the present invention. Table 3: Comparison of electrical properties (sintering 1270. C/10min Vf: 20V D pressure: 5.0g/cc)
Figure imgf000012_0001
钽粉电学性能的检测方法及设备 参照国家标准 GB/T 3137-2007,《钽粉 电性能试验方法》。
Figure imgf000012_0001
The method and equipment for testing the electrical properties of tantalum powder refer to the national standard GB/T 3137-2007, "Test method for electrical properties of tantalum powder".
表 3中:  In Table 3:
烧结^ 1270。C/10min表示 4 ^在 1270。C烧结 10分钟得到阳极块。  Sintered ^ 1270. C/10min means 4^ at 1270. C sintering for 10 minutes gave an anode block.
Vf: 20V表示 20V的电压下赋能。  Vf: 20V means energization at a voltage of 20V.
D压: 5.0g/cc表示阳极块的压制密度为 5.0g/cc.  D pressure: 5.0g / cc means that the anode block has a compact density of 5.0g / cc.
ΚΧ10-4 (μΑ/μΡν)代表漏电流, 以下简称 Κ值。 由于电容介廣不可能绝对不 导电, 所以当电容加上直流电压时, 电容器会有漏电流产生。 若漏电流太大, 电容器就会发热损坏。 对电容器施加额定直流工作电压将观察到充电电流的变 化开始艮大, 随着时间而下降, 到某一终值时达到较稳定状态, 这一终值电流 称为漏电流。 ΚΧ10- 4 (μΑ / μΡν) representative of leakage current, hereinafter referred Κ values. Since the capacitance can not be absolutely non-conductive, when the capacitor is applied with a DC voltage, the capacitor will have leakage current. If the leakage current is too large, The capacitor will be damaged by heat. Applying a rated DC operating voltage to the capacitor will observe that the change in charging current begins to increase, decreases over time, and reaches a more stable state at a certain final value. This final value current is called leakage current.
CV ( FV/g)代表比容量, 即单位重量的电池或活性物质所能放出的电量。 tg6 (%)代表电容器的损耗。电容器的损耗实际就是电容器消耗的无功功率, 于是也可以这样定义: 电容器的损耗也指电容器在电场作用下, 消耗的无功功 率与消耗的总功率的比值, 其表示式为: 电容器损耗角正切值 =无功功率÷总 功率, 或电容器损耗角正切值 =无功功率 χΐοο÷总功率 (得出的值为百分比)。  CV (FV/g) represents the specific capacity, that is, the amount of electricity that can be discharged per unit weight of the battery or active material. Tg6 (%) represents the loss of the capacitor. The loss of the capacitor is actually the reactive power consumed by the capacitor, so it can also be defined as follows: The loss of the capacitor also refers to the ratio of the reactive power consumed by the capacitor under the electric field to the total power consumed. The expression is: Capacitor loss angle Tangent value = reactive power ÷ total power, or capacitor loss tangent = reactive power χΐ ο ÷ total power (the resulting value is a percentage).
SHV (%)代表电容器阳极块的体积收缩率。  SHV (%) represents the volumetric shrinkage of the capacitor anode block.
分析数据表明, 在用于制^ 的氟钽酸钾中掺氮, 与直接在 中掺氮 一样, 也可以改善电容器级钽粉的性能。 随着掺氮量的增加, 比容在增加, 漏 电流在降低, 损 在降低, 表明 4¾盼的电学性能在提高。  The analytical data show that the nitrogen doping in the potassium fluoroantimonate used for the manufacture can also improve the performance of the capacitor grade tantalum powder as well as the direct doping of nitrogen. As the amount of nitrogen increases, the specific volume increases, the leakage current decreases, and the loss decreases, indicating that the electrical performance is expected to increase.
通 发明方法可以实现在 中掺氮,并且能有效控制 中的氮含量, 所制得的产品是符合要求的。  The method of the invention can achieve nitrogen doping in the process, and can effectively control the nitrogen content in the process, and the obtained product is satisfactory.
公开于本文中的本发明的说明书及实施例是示范性说明, 很显然, 对于本 领域的技术人员而言, 本发明还有其他实施方案, 本发明的实质范围和精神由 权利要求书所确定。  The specification and the embodiments of the present invention are set forth in the description of the preferred embodiments of the invention .

Claims

权 利 要 求 书 Claim
1.一种钽粉的制备方法, 其包括如下步骤:  A method for preparing a tantalum powder, comprising the steps of:
(a)向 H2TaF7i^¾ 入 KN03或者 KN03与 KC1的混合物; (a) a mixture of KN0 3 or KN0 3 and KC1 to H 2 TaF 7 i^3⁄4;
(b)调节 J½液 , 进行保温;  (b) adjusting the J1⁄2 liquid for heat preservation;
(c)冷却结晶, 得到 K2TaF7粉末; (c) cooling the crystals to obtain a K 2 TaF 7 powder;
(d)使用由步骤 (c)得到的 K2TaF7粉末,利用氣钽酸钾钠还原工艺制备 4¾盼。 (d) Using the K 2 TaF 7 powder obtained in the step (c), the preparation was carried out by a potassium phthalate sodium reduction process.
2.根据权利要求 1所述的制备方法,其中在步骤 (a)中,根据式 (4)和 (5)来计 算 KN03和 KC1的用量: The production method according to claim 1, wherein in the step (a), the amounts of KN0 3 and KC1 are calculated according to the formulas (4) and (5):
KC1用量 (g) = H2TaF7溶液浓度 (g/l)xH2TaF7溶液体积 (1)ΧΟ·67ΧΝ1 The amount of KC1 (g) = concentration of solution of H 2 TaF 7 (g / l ) xH 2 TaF 7 solution volume (1) ΧΟ · 67ΧΝ1
(4) (4)
KN03用量 (g) = H2TaF7溶液含量 (g/l)xH2TaF7溶液体积 (1)X0.91XN2 KN0 3 dosage (g) = H 2 TaF 7 solution content (g / l) x H 2 TaF 7 solution volume (1) X0.91XN2
(5) 其中, Nl+N2 = l.l ~ 1.3, 且 N2不为 0。  (5) where Nl+N2 = l.l ~ 1.3, and N2 is not 0.
3.根据权利要求 1或 2所述的制备方法, 其中在步骤 (a)中, 加入 KN03或 者 KN03与 KC1的混合物之前, 将 H2TaF7溶液的酸度调节至 0.7 - 1.2mol/l。 The preparation method according to claim 1 or 2, wherein in the step (a), the acidity of the H 2 TaF 7 solution is adjusted to 0.7 - 1.2 mol/l before adding KN0 3 or a mixture of KN0 3 and KC1. .
4.根据权利要求 1或 2所述的制备方法, 其中在步骤 (b)中, 使用 HF调节 液 The production method according to claim 1 or 2, wherein in the step (b), the HF adjusting solution is used
5.根据权利要求 1或 2所述的制备方法, 其中在步骤 (b)中, 将^ ί液 调节至 1.2 - 1.65mol/l. The preparation method according to claim 1 or 2, wherein in the step (b), the liquid is adjusted to 1.2 - 1.65 mol / l.
6.根据权利要求 1或 2所述的制备方法, 其中在步骤 (b)中,保温时间不少 于 20分钟。 The preparation method according to claim 1 or 2, wherein in the step (b), the holding time is not less than 20 minutes.
7.根据权利要求 1或 2所述的制备方法, 其中在步骤 (c)中, 冷却结晶后还 对产物进行烘干。 The production method according to claim 1 or 2, wherein in the step (c), the product is further dried after cooling and crystallization.
8.根据权利要求 7所述的制备方法, 其中烘干包括在 120 - 160。C烘干。  The preparation method according to claim 7, wherein the drying is performed at 120 - 160. C drying.
9.根据权利要求 8所述的制备方法,其中烘干还包括在 250 ~ 350'C的第二 次烘干。  The preparation method according to claim 8, wherein the drying further comprises a second drying at 250 to 350 °C.
10.根据权利要求 1-9任一项所述的制备方法所制得的 。  The process for producing according to any one of claims 1-9.
PCT/CN2013/090820 2013-12-30 2013-12-30 Preparation method of high-nitrogen-content capacitor grade tantalum powder and tantalum powder prepared therefrom and tantalum capacitor WO2015100519A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1699147A (en) * 2005-05-24 2005-11-23 株洲硬质合金集团有限公司 Ultra-fine high-nitrogen tantalum nitride powder and its preparation method
CN101818267A (en) * 2005-09-16 2010-09-01 H.C.施塔克有限公司 Method of reducing
CN102990076A (en) * 2012-12-18 2013-03-27 宁夏东方钽业股份有限公司 Stirring water-washing method and device for producing tantalum powder by reducing potassium fluotantalate via metallic sodium

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0665302B1 (en) * 1994-01-26 2000-05-03 H.C. Starck, INC. Nitriding tantalum powder
GB0902486D0 (en) * 2009-02-13 2009-04-01 Metalysis Ltd A method for producing metal powders
CN101491834B (en) * 2009-03-05 2012-06-20 宁夏东方钽业股份有限公司 Preparation method of tantalum powder
CN102382993B (en) * 2011-10-09 2013-08-28 广东致远新材料有限公司 Preparation method of target-grade ultrahigh-purity tantalum metal

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1699147A (en) * 2005-05-24 2005-11-23 株洲硬质合金集团有限公司 Ultra-fine high-nitrogen tantalum nitride powder and its preparation method
CN101818267A (en) * 2005-09-16 2010-09-01 H.C.施塔克有限公司 Method of reducing
CN102990076A (en) * 2012-12-18 2013-03-27 宁夏东方钽业股份有限公司 Stirring water-washing method and device for producing tantalum powder by reducing potassium fluotantalate via metallic sodium

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