WO2015075623A1 - Power module comprising an integrated current measurement - Google Patents

Power module comprising an integrated current measurement Download PDF

Info

Publication number
WO2015075623A1
WO2015075623A1 PCT/IB2014/066111 IB2014066111W WO2015075623A1 WO 2015075623 A1 WO2015075623 A1 WO 2015075623A1 IB 2014066111 W IB2014066111 W IB 2014066111W WO 2015075623 A1 WO2015075623 A1 WO 2015075623A1
Authority
WO
WIPO (PCT)
Prior art keywords
power module
current
conductor structure
bifilar
module
Prior art date
Application number
PCT/IB2014/066111
Other languages
French (fr)
Inventor
Ole MÜHLFELD
Rüdiger BREDTMANN
Michael Heydenreich
Original Assignee
Danfoss Silicon Power Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danfoss Silicon Power Gmbh filed Critical Danfoss Silicon Power Gmbh
Publication of WO2015075623A1 publication Critical patent/WO2015075623A1/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/207—Constructional details independent of the type of device used
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/091—Constructional adaptation of the sensor to specific applications

Definitions

  • Power module comprising an integrated current measurement
  • the invention relates to a powder module comprising an arrangement for current measurement of currents occurring within the power module.
  • the latter can be realized, for example, in accordance with the transformer principle (d) or in the form of current-compensating transducers (e).
  • sensors are offered for sale for magnetic current measurement which, with the use of anisotropic magnetoresistance (AMR), enable an active field-compensating measurement (f).
  • AMR anisotropic magnetoresistance
  • f active field-compensating measurement
  • the disadvantage of a resistive measurement (a) consists in additional power losses and the lack of galvanic isolation from the circuit to be measured.
  • One disadvantage with a monolithically integrated solution (b) is the complex implementation. Only few, often customer-specific, power semiconductors have this additional functionality, which furthermore takes up valuable
  • Solutions with transformer or ferrite cores have the disadvantages of the physical size, the additional weight and the nonlinearities of the specific magnetic core material.
  • the disadvantage of present-day actively current-compensating transformer measuring transducers (e) consists in the physical size, the considerable costs and the lack of integratability and the resultant space requirement.
  • Their advantage consists in the high level of accuracy and low level of susceptibility to faults.
  • the object of the invention therefore consists in providing a power module comprising an arrangement integrated in the power module for current measurement of currents occurring within the power module which combines the advantages of the abovementioned solutions without having the disadvantages thereof, however.
  • a substantial challenge which presents itself in the case of integrated solutions consists in that broadband interference signals (EMC) can be coupled into the measurement circuit galvanically and also via magnetic fields. Solutions which are insensitive to such interference and enable simple further-processing of the measurement signals should therefore at least have galvanic isolation.
  • EMC broadband interference signals
  • Fig. 1 shows a schematic drawing of the bifilar conductor structure with the configuration according to the invention in accordance with a first exemplary embodiment
  • Fig. 2 shows a schematic drawing of the bifilar conductor structure with the configuration according to the invention in accordance with a second exemplary embodiment
  • Fig. 3 shows a schematic drawing of the bifilar conductor structure with the configuration according to the invention in accordance with a third exemplary embodiment.
  • Fig. 4 shows a schematic drawing of a section of a power module including a bifilar
  • Fig. 5 shows a schematic drawing of the power module illustrated in Fig. 4 but including an additional mounting structure.
  • the basic concept of the invention consists in the integration of a magnetic field-based current measurement in the interior of a power module, for example an inverter module.
  • a magnetoresistive sensor which preferably operates on the basis of the AMR (anisotropic magnetoresistive effect) or GMR (giant magnetoresistance) principle and is possibly assembled in addition to an application-specific integrated circuit (ASIC) and a possibly required passive circuit on a substrate, is mounted close to a measuring conductor structure with a particular configuration on a copper structure fitted on a DCB (direct copper bonded) substrate, a high-current busbar arrangement, a connection terminal or another conductive support structure within the module.
  • AMR anisotropic magnetoresistive effect
  • GMR giant magnetoresistance
  • Figures 1-3 show that this (measuring) conductor structure 10 has a bifilar geometry which is suitable for the sensor and which carries current which is flowing antiparallel but has the same magnitude, with the result that the differential magnetic field can be measured by the
  • magnetoresistive sensor 20 This design can be configured on the DCB or on another conductive structure 30 with low inductance and is part of the circuit mount layout, which can also be produced without any additional complexity and with only a small space requirement.
  • a measurement of the total current or a partial current in the busbar would be conceivable in the case of current busbar arrangements or conductor structures. In the latter case, two current paths can be generated, as shown in Figure 2, of which one carries the main current and the other path conducts a partial current, which is measured. The total current can then be determined
  • each conductor structure has a free limb, wherein the free limbs are separated by the feed line to one free limb and are connected to one another by means of bonding wires, bridging the feed line.
  • the sensor 20 in this case covers the majority of lines combined in the U-shaped conductor structure 10.
  • the sensor 20 arranged in the power module can then be used in a flexible manner for current measurement within the module. In this case, the measurement takes place in a space-saving manner, with galvanic isolation, virtually without any power losses, and in a very precise and highly dynamic manner.
  • the output signals of the sensor 20 can be passed to the outside by means of the control or signal line pins of a frame-based module or else contact can be made externally with the aid of pins soldered to the carrier substrate of the sensor directly through the cover of the module.
  • a particular advantage of the measurement arrangement consists in the symmetrical provision of two field vectors, which are generally equal in magnitude, but have a different direction. These fields are in each case registered by the coupled AMR sensor and compensated for by an active measurement circuit.
  • This arrangement is particularly insensitive to the coupling-in of asymmetric interference variables and can therefore also be operated in the vicinity of sources of interference, as are characteristic for pulse-controlled power converters. Furthermore, it manages without any large field-concentrating ferrite or transformer cores, whose saturation and hysteresis properties can falsify the measurement result.
  • a special U-shaped or ⁇ -shaped planar measuring conductor structure on a ceramic circuit carrier for example DCB
  • a ceramic circuit carrier for example DCB
  • This specific U-shaped or ⁇ -shaped planar measuring conductor structure can also be implemented on a busbar in a power semiconductor module, also as an arrangement for measuring partial currents within the meaning of a current divider arrangement by means of the magnetoresistive sensor arranged directly thereabove.
  • a specific U-shaped or ⁇ -shaped vertical measuring conductor structure on a busbar or on a circuit carrier by the layered arrangement of insulating and conductive layers, wherein one layer performs the function of the forward conductor and another layer performs the function of the return conductor, in conjunction with a magnetoresistive sensor arranged in the direct vicinity.
  • the magnetoresistive sensor is preferably fastened on a copper layer of the DCB substrate or the busbar by means of adhesive bonding.
  • FIG. 4 illustrates an alternative embodiment of the inventive idea.
  • a section of a power module is shown in an unfinished state.
  • Two DCB substrates 3, 4 are attached to a baseplate 5.
  • the complete module may contain multiple DCB substrates, but here we see only one section of the full module. Portions of the DCB substrates are hidden by the support bar 6.
  • Positive 2 and negative 3 DC input connectors are shown at the back of this section of the module. They feed current into the DCB substrate 3, 4.
  • AC outputs 7, 8 are shown at the front of the DCB substrates and in this section of the module two of the outputs of the substrates are connected together by a conductor 9 which is connected electrically to the AC output 11.
  • the support bar 6 is advantageously constructed from an insulating material, preferably a plastic.
  • the support bar 6 is constructed from a glass-reinforced epoxy material, for example that known by the designation "FR4".
  • Figure 5 illustrates the same section of a power module, but here showing how an adapter PCB 13 is mounted above the support bar 6.
  • this adapter PCB 13 is mounted the current sensor 20, in such a way that it lies directly above, and correctly orientated with respect to, the U-shaped conductor 10.
  • Soldered pins 14 conducts signals to and from the DCB 3, 4.
  • the adapter PCB 13 functions as a support onto which the current sensors 20 are mounted, as well as a means of conducting signals from the DCB to the current sensor.
  • the adapter PCB 13 may also support additional circuits, such as a gate drive PCB 15 which can be mounted above the current sensor.
  • the current sensor 20 is not visible directly, since it is mounted on the adapter PCB 13 in an area which is hidden by a gate drive PCB 15 which supports (on its underside, not fully visible from the angle of view of this figure) circuitry suitable for controlling the gate signals of the semiconductor switches mounted on the DCB substrates 3, 4.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)

Abstract

A power module comprising an arrangement for current measurement of currents occurring within the power module, compriosing a bifilar conductor structure (10) which is arranged parallel in the power module and which is designed to conduct a current of the same magnitude flowing antiparallel in the bifilar conductor structure, and a magnetoresistive sensor (20) which is arranged in the power module and senses the differential magnetic field caused in the bifilar conductor structure.

Description

Power module comprising an integrated current measurement
The invention relates to a powder module comprising an arrangement for current measurement of currents occurring within the power module.
It is known from the prior art to perform the measurement of currents within semiconductor power modules with the aid of measuring resistors (a) or by means of sensors (b) integrated monolithically in the power semiconductors. A further possibility consists in integrating ferrite cores (c) around the current-conducting conductors, which ferrite cores provide a current-proportional field for externally fitted Hall effect sensors. In addition, it is conventional to arrange measuring apparatuses externally at the periphery of power modules.
The latter can be realized, for example, in accordance with the transformer principle (d) or in the form of current-compensating transducers (e).
Furthermore, nowadays sensors are offered for sale for magnetic current measurement which, with the use of anisotropic magnetoresistance (AMR), enable an active field-compensating measurement (f). These sensors operate in galvanically isolated fashion, with good accuracy and in broadband fashion, but need to be arranged outside the power module.
The disadvantage of a resistive measurement (a) consists in additional power losses and the lack of galvanic isolation from the circuit to be measured. One disadvantage with a monolithically integrated solution (b) is the complex implementation. Only few, often customer-specific, power semiconductors have this additional functionality, which furthermore takes up valuable
semiconductor area and likewise does not have galvanic isolation.
Solutions with transformer or ferrite cores (c-e) have the disadvantages of the physical size, the additional weight and the nonlinearities of the specific magnetic core material. The disadvantage of present-day actively current-compensating transformer measuring transducers (e) consists in the physical size, the considerable costs and the lack of integratability and the resultant space requirement. Their advantage consists in the high level of accuracy and low level of susceptibility to faults.
The lack of integratability in a power semiconductor module is also characteristic of AMR sensors in use nowadays (f). However sensors that use AMR technology have some great advantages over some of the other sensors available. Generally they may be obtained in sizes which are small enough to fit within existing power modules, provided suitable modifications to the structure (conductor shapes and routings) of the modules can be developed and implemented. The lower cost of the AMR sensors is also a distinct commercial advantage.
The object of the invention therefore consists in providing a power module comprising an arrangement integrated in the power module for current measurement of currents occurring within the power module which combines the advantages of the abovementioned solutions without having the disadvantages thereof, however. A substantial challenge which presents itself in the case of integrated solutions consists in that broadband interference signals (EMC) can be coupled into the measurement circuit galvanically and also via magnetic fields. Solutions which are insensitive to such interference and enable simple further-processing of the measurement signals should therefore at least have galvanic isolation.
This object is achieved by the power module having the features of Claim 1. The dependent claims set forth advantageous configurations of the invention.
The invention will be explained in more detail with the aid of the attached drawings, in which:
Fig. 1 shows a schematic drawing of the bifilar conductor structure with the configuration according to the invention in accordance with a first exemplary embodiment;
Fig. 2 shows a schematic drawing of the bifilar conductor structure with the configuration according to the invention in accordance with a second exemplary embodiment; and Fig. 3 shows a schematic drawing of the bifilar conductor structure with the configuration according to the invention in accordance with a third exemplary embodiment.
Fig. 4 shows a schematic drawing of a section of a power module including a bifilar
conductor structure with the configuration according to the invention in accordance with a fourth exemplary embodiment.
Fig. 5 shows a schematic drawing of the power module illustrated in Fig. 4 but including an additional mounting structure.
The basic concept of the invention consists in the integration of a magnetic field-based current measurement in the interior of a power module, for example an inverter module. For this purpose, a magnetoresistive sensor, which preferably operates on the basis of the AMR (anisotropic magnetoresistive effect) or GMR (giant magnetoresistance) principle and is possibly assembled in addition to an application-specific integrated circuit (ASIC) and a possibly required passive circuit on a substrate, is mounted close to a measuring conductor structure with a particular configuration on a copper structure fitted on a DCB (direct copper bonded) substrate, a high-current busbar arrangement, a connection terminal or another conductive support structure within the module.
Figures 1-3 show that this (measuring) conductor structure 10 has a bifilar geometry which is suitable for the sensor and which carries current which is flowing antiparallel but has the same magnitude, with the result that the differential magnetic field can be measured by the
magnetoresistive sensor 20. This design can be configured on the DCB or on another conductive structure 30 with low inductance and is part of the circuit mount layout, which can also be produced without any additional complexity and with only a small space requirement.
A measurement of the total current or a partial current in the busbar would be conceivable in the case of current busbar arrangements or conductor structures. In the latter case, two current paths can be generated, as shown in Figure 2, of which one carries the main current and the other path conducts a partial current, which is measured. The total current can then be determined
computationally (known fixed division ratio). Finally, the layout shown in Figure 3 is also conceivable, in accordance with which two U-shaped conductor structures 10 arranged parallel to one another are provided, of which one conductor structure surrounds the other conductor structure. In this case, each conductor structure has a free limb, wherein the free limbs are separated by the feed line to one free limb and are connected to one another by means of bonding wires, bridging the feed line. The sensor 20 in this case covers the majority of lines combined in the U-shaped conductor structure 10.
The sensor 20 arranged in the power module can then be used in a flexible manner for current measurement within the module. In this case, the measurement takes place in a space-saving manner, with galvanic isolation, virtually without any power losses, and in a very precise and highly dynamic manner. The output signals of the sensor 20 can be passed to the outside by means of the control or signal line pins of a frame-based module or else contact can be made externally with the aid of pins soldered to the carrier substrate of the sensor directly through the cover of the module.
A particular advantage of the measurement arrangement consists in the symmetrical provision of two field vectors, which are generally equal in magnitude, but have a different direction. These fields are in each case registered by the coupled AMR sensor and compensated for by an active measurement circuit. This arrangement is particularly insensitive to the coupling-in of asymmetric interference variables and can therefore also be operated in the vicinity of sources of interference, as are characteristic for pulse-controlled power converters. Furthermore, it manages without any large field-concentrating ferrite or transformer cores, whose saturation and hysteresis properties can falsify the measurement result.
Specifically, a special U-shaped or Ω-shaped planar measuring conductor structure on a ceramic circuit carrier (for example DCB), in the direct vicinity or together with one or more power semiconductors in a power semiconductor module, and a magnetoresistive sensor attached directly thereabove are provided.
This specific U-shaped or Ω-shaped planar measuring conductor structure can also be implemented on a busbar in a power semiconductor module, also as an arrangement for measuring partial currents within the meaning of a current divider arrangement by means of the magnetoresistive sensor arranged directly thereabove. As an alternative, there is the provision of a specific U-shaped or Ω-shaped vertical measuring conductor structure on a busbar or on a circuit carrier by the layered arrangement of insulating and conductive layers, wherein one layer performs the function of the forward conductor and another layer performs the function of the return conductor, in conjunction with a magnetoresistive sensor arranged in the direct vicinity.
The magnetoresistive sensor is preferably fastened on a copper layer of the DCB substrate or the busbar by means of adhesive bonding.
Figure 4 illustrates an alternative embodiment of the inventive idea. In this figure, a section of a power module is shown in an unfinished state. Two DCB substrates 3, 4 are attached to a baseplate 5. The complete module may contain multiple DCB substrates, but here we see only one section of the full module. Portions of the DCB substrates are hidden by the support bar 6. Positive 2 and negative 3 DC input connectors are shown at the back of this section of the module. They feed current into the DCB substrate 3, 4. AC outputs 7, 8 are shown at the front of the DCB substrates and in this section of the module two of the outputs of the substrates are connected together by a conductor 9 which is connected electrically to the AC output 11. In the completed module, the top of this conductor is exposed, and a connection is made using a bolt into the threaded hole 12 shown. The conductor 9 is supported in a recess in the support bar 6 and undergoes a change of direction to form the U-shaped pattern 10 of the invention. The support bar 6 is advantageously constructed from an insulating material, preferably a plastic. In a preferred embodiment, the support bar 6 is constructed from a glass-reinforced epoxy material, for example that known by the designation "FR4".
Figure 5 illustrates the same section of a power module, but here showing how an adapter PCB 13 is mounted above the support bar 6. Onto this adapter PCB 13 is mounted the current sensor 20, in such a way that it lies directly above, and correctly orientated with respect to, the U-shaped conductor 10. Soldered pins 14 conducts signals to and from the DCB 3, 4. The adapter PCB 13 functions as a support onto which the current sensors 20 are mounted, as well as a means of conducting signals from the DCB to the current sensor. In addition, the adapter PCB 13 may also support additional circuits, such as a gate drive PCB 15 which can be mounted above the current sensor. In this figure, the current sensor 20 is not visible directly, since it is mounted on the adapter PCB 13 in an area which is hidden by a gate drive PCB 15 which supports (on its underside, not fully visible from the angle of view of this figure) circuitry suitable for controlling the gate signals of the semiconductor switches mounted on the DCB substrates 3, 4.

Claims

1. Power module comprising an arrangement for current measurement of currents occurring within the power module, characterized by a bifilar conductor structure, which is arranged parallel in the power module and which is designed to conduct a current of the same magnitude flowing antiparallel in the bifilar conductor structure, and a magnetoresistive sensor which is arranged in the power module and senses the differential magnetic field caused in the bifilar conductor structure.
2. Power module according to Claim 1, characterized in that the magnetoresistive sensor is an AMR or GMR sensor.
3. Power module according to one of the preceding claims, characterized in that the bifilar structure is part of a U-shaped or Ω-shaped measuring conductor structure.
4. Power module according to one of the preceding claims, characterized in that the bifilar structure is part of a copper structure applied to a DCB substrate or part of a busbar.
PCT/IB2014/066111 2013-11-19 2014-11-18 Power module comprising an integrated current measurement WO2015075623A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013112760.6 2013-11-19
DE102013112760.6A DE102013112760A1 (en) 2013-11-19 2013-11-19 Power module with integrated current measurement

Publications (1)

Publication Number Publication Date
WO2015075623A1 true WO2015075623A1 (en) 2015-05-28

Family

ID=52021397

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2014/066111 WO2015075623A1 (en) 2013-11-19 2014-11-18 Power module comprising an integrated current measurement

Country Status (2)

Country Link
DE (1) DE102013112760A1 (en)
WO (1) WO2015075623A1 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018112472A (en) * 2017-01-12 2018-07-19 日立オートモティブシステムズ株式会社 Current detection device
JP6471826B1 (en) * 2018-10-22 2019-02-20 Tdk株式会社 Current sensor and method of manufacturing bus bar used therefor
CN109541279A (en) * 2018-12-26 2019-03-29 新纳传感系统有限公司 Bypass type current sensor
JP2019060646A (en) * 2017-09-25 2019-04-18 矢崎総業株式会社 Current sensor
CN110146734A (en) * 2019-05-23 2019-08-20 新纳传感系统有限公司 Improved current sensor
JP2020067304A (en) * 2018-10-22 2020-04-30 Tdk株式会社 Current sensor and method of manufacturing bus bar used for the same
WO2020100443A1 (en) * 2018-11-12 2020-05-22 株式会社村田製作所 Current sensor

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997022884A1 (en) * 1995-12-20 1997-06-26 Sundstrand Corporation Current sensing device
DE19549181A1 (en) * 1995-12-30 1997-07-03 Bosch Gmbh Robert Appliance for measuring the current in conductor
DE10041599A1 (en) * 1999-08-27 2001-08-09 Yazaki Corp Current sensor and electrical circuit using it
WO2002066996A1 (en) * 2001-02-20 2002-08-29 Robert Bosch Gmbh Device, amperemeter and motor vehicle
US20070096716A1 (en) * 2005-10-14 2007-05-03 Tdk Corporation Current sensor
EP1882953A1 (en) * 2006-07-26 2008-01-30 Siemens Aktiengesellschaft Current measuring device
DE102006034579A1 (en) * 2006-07-26 2008-01-31 Siemens Ag Current detection device and method for current detection
WO2012046547A1 (en) * 2010-10-08 2012-04-12 アルプス・グリーンデバイス株式会社 Current sensor
US20130187645A1 (en) * 2010-07-30 2013-07-25 Peugeot Citroen Automobiles Sa Magnetoresistor integrated sensor for measuring voltage or current, and diagnostic system

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2000873B (en) * 1977-07-08 1982-05-26 Landis & Gyr Ag Measuring transformers for potential-free measurement of currents or voltages and static electricity meters including such transformers
CH650357A5 (en) * 1981-03-26 1985-07-15 Landis & Gyr Ag MAGNETIC CORE-FREE MEASURING CONVERTER FOR POTENTIAL-FREE MEASUREMENT OF A MEASURING CURRENT.

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997022884A1 (en) * 1995-12-20 1997-06-26 Sundstrand Corporation Current sensing device
DE19549181A1 (en) * 1995-12-30 1997-07-03 Bosch Gmbh Robert Appliance for measuring the current in conductor
DE10041599A1 (en) * 1999-08-27 2001-08-09 Yazaki Corp Current sensor and electrical circuit using it
WO2002066996A1 (en) * 2001-02-20 2002-08-29 Robert Bosch Gmbh Device, amperemeter and motor vehicle
US20070096716A1 (en) * 2005-10-14 2007-05-03 Tdk Corporation Current sensor
EP1882953A1 (en) * 2006-07-26 2008-01-30 Siemens Aktiengesellschaft Current measuring device
DE102006034579A1 (en) * 2006-07-26 2008-01-31 Siemens Ag Current detection device and method for current detection
US20130187645A1 (en) * 2010-07-30 2013-07-25 Peugeot Citroen Automobiles Sa Magnetoresistor integrated sensor for measuring voltage or current, and diagnostic system
WO2012046547A1 (en) * 2010-10-08 2012-04-12 アルプス・グリーンデバイス株式会社 Current sensor

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018112472A (en) * 2017-01-12 2018-07-19 日立オートモティブシステムズ株式会社 Current detection device
WO2018131324A1 (en) * 2017-01-12 2018-07-19 日立オートモティブシステムズ株式会社 Current detection device
US10884030B2 (en) 2017-01-12 2021-01-05 Hitachi Automotive Systems, Ltd. Current detection device
JP2019060646A (en) * 2017-09-25 2019-04-18 矢崎総業株式会社 Current sensor
JP6471826B1 (en) * 2018-10-22 2019-02-20 Tdk株式会社 Current sensor and method of manufacturing bus bar used therefor
JP2020067304A (en) * 2018-10-22 2020-04-30 Tdk株式会社 Current sensor and method of manufacturing bus bar used for the same
JP2020067305A (en) * 2018-10-22 2020-04-30 Tdk株式会社 Current sensor and method of manufacturing bus bar used for the same
WO2020100443A1 (en) * 2018-11-12 2020-05-22 株式会社村田製作所 Current sensor
CN109541279A (en) * 2018-12-26 2019-03-29 新纳传感系统有限公司 Bypass type current sensor
CN110146734A (en) * 2019-05-23 2019-08-20 新纳传感系统有限公司 Improved current sensor

Also Published As

Publication number Publication date
DE102013112760A1 (en) 2015-05-21

Similar Documents

Publication Publication Date Title
WO2015075623A1 (en) Power module comprising an integrated current measurement
EP2174152B1 (en) Current sensor having sandwiched magnetic permeability layer
US7642768B1 (en) Current sensor having field screening arrangement including electrical conductors sandwiching magnetic permeability layer
US10345343B2 (en) Current sensor isolation
US20230084942A1 (en) Offset current sensor structure
EP2290380B1 (en) Arrangements for an integrated sensor
US9739850B2 (en) Push-pull flipped-die half-bridge magnetoresistive switch
US11112467B2 (en) Magnetic field sensor circuit in package with means to add a signal from a coil
US9547024B2 (en) Device for current measurement
WO2009148823A1 (en) Arrangements for a current sensing circuit and integrated current sensor
US10498198B2 (en) Magnetic sensor
CN110050196A (en) Current sensor
US11519941B2 (en) Current sensing device having an integrated electrical shield
CN103123369A (en) Current sensing device
US8270127B2 (en) Magnetic coupling-type isolator
CN108780130B (en) Magnetic sensor
US10502767B2 (en) Electric current detection device and electric current detection method
JP2016206006A (en) Magnetic sensor
JP2008020402A (en) Electric current detection mechanism
JP2019211385A (en) Magnetic detection device and magnetic bias device
US11994541B2 (en) Current sensor assemblies for low currents
JP2019070563A (en) Current sensor

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14809987

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 14809987

Country of ref document: EP

Kind code of ref document: A1