WO2015074419A1 - 触摸感应电路及其方法、面板和触摸感应显示装置 - Google Patents

触摸感应电路及其方法、面板和触摸感应显示装置 Download PDF

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Publication number
WO2015074419A1
WO2015074419A1 PCT/CN2014/081119 CN2014081119W WO2015074419A1 WO 2015074419 A1 WO2015074419 A1 WO 2015074419A1 CN 2014081119 W CN2014081119 W CN 2014081119W WO 2015074419 A1 WO2015074419 A1 WO 2015074419A1
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WIPO (PCT)
Prior art keywords
switch tube
gate
electrode
node
touch sensing
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Application number
PCT/CN2014/081119
Other languages
English (en)
French (fr)
Inventor
张九占
胡明
Original Assignee
京东方科技集团股份有限公司
合肥京东方光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 合肥京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US14/415,926 priority Critical patent/US9459743B2/en
Priority to EP14861142.9A priority patent/EP2913744B1/en
Publication of WO2015074419A1 publication Critical patent/WO2015074419A1/zh

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G09G3/3655—Details of drivers for counter electrodes, e.g. common electrodes for pixel capacitors or supplementary storage capacitors
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0447—Position sensing using the local deformation of sensor cells
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0469—Details of the physics of pixel operation
    • G09G2300/0478—Details of the physics of pixel operation related to liquid crystal pixels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0852—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor being a dynamic memory with more than one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2354/00—Aspects of interface with display user

Definitions

  • the present invention relates to the field of touch sensing technologies, and in particular, to a touch sensing circuit and method thereof, a panel, and a touch sensitive display device. Background technique
  • the in-cell touch panel is widely used because it is integrated in the sensing panel, thereby making the entire panel more integrated and thinner and thinner.
  • the in-line touch screen integrates touch and sensing capabilities.
  • 1 is a schematic structural diagram of a touch sensing circuit in the prior art. As shown in FIG. 1, the touch sensing circuit includes: a data line, a first gate line, a second gate line, a signal transmission line, a liquid crystal capacitor Clc, and a storage capacitor.
  • a source of the thin film transistor T1 is connected to a data line
  • a gate of the thin film transistor T1 is connected to a second gate line
  • a drain of the thin film transistor T1 is The source of the thin film transistor ⁇ 2 is connected, the drain of the thin film transistor ⁇ 2 is connected to the signal transmission line, and the gate of the thin film transistor ⁇ 2 is connected to the first gate line.
  • a junction of the thin film transistor T1 and the thin film transistor T2 forms a second node defect, and the second node is connected to one end of the liquid crystal capacitor Clc and one end of the storage capacitor Cst, and the other end of the common electrode and the liquid crystal capacitor Clc and the storage capacitor Cst The other end is connected, and the voltage supplied by the common electrode is Vcom.
  • FIG. 2 is a schematic view of the liquid crystal arrangement when the liquid crystal panel has no touch
  • FIG. 3 is a schematic view of the liquid crystal arrangement when the liquid crystal panel has a touch.
  • the liquid crystal since the liquid crystal is used as an anisotropic medium, the liquid crystal The capacitance Clc is related to the orientation and spacing of the liquid crystal molecules. When the liquid crystal panel is touched, the liquid crystal capacitance Clc changes, and the storage capacitance Cst does not change.
  • the touch sensing circuit works as follows: It is assumed that the voltage of the pixel unit written in the previous frame is Vp, so the charges stored in the liquid crystal capacitor Cl c and the storage capacitor Cst are:
  • the size of AVpl directly determines the sensitivity of touch detection.
  • the prior art has the following problems: The dot voltage change when a touch occurs and when no touch occurs AVpl is too small, which reduces the sensitivity of touch sensing. Summary of the invention
  • the present invention provides a touch sensing circuit and method therefor, a panel and a touch sensitive display device that can improve the sensitivity of touch sensing.
  • the present invention provides a touch sensing circuit, including: a first gate line, a second gate line, a data line, a signal transmission line, and a common electrode, the first gate line, the second gate line, and The data line defines a plurality of pixel units, wherein the first switching tube, the second switching tube and the third switching tube are formed in the pixel unit, and the signal transmission line is connected to determine whether there is a touch action according to a signal change.
  • Signal processor that occurs;
  • the third switch tube is connected in series between the first switch tube and the second switch tube; the connection between the first switch tube and the third switch tube forms a first node, and the second switch Forming a second node at a junction of the tube and the third switch tube, a first capacitor is formed between the first node and the common electrode, and a second capacitor is formed between the second node and the common electrode Having a variable second capacitance;
  • the signal transmission line is connected to the second switch tube, and the data line is connected to the first switch tube.
  • the first switch tube includes: an active layer pattern, a first gate, a first source, and a first drain
  • the second switch includes: an active layer pattern, a second gate, a second source and a second drain
  • the third switch tube includes: an active layer pattern, a third gate, a third source, and a third Drain
  • the first source is connected to the data line, the first drain and the third drain are connected to the first node, and the third source and the second source are connected to the a second node, the second drain is connected to the signal transmission line, the first gate and the third gate are connected to the second gate line, the second gate and the second A grid line is connected.
  • the first gate, the second gate, and the third gate are disposed in a same layer, the first source, the second source, the third source, and The first drain, the second drain, and the third drain are disposed in the same layer.
  • the first drain is connected to the first end of the first capacitor
  • the second source is connected to the first end of the second capacitor
  • the third source is connected to the first end of the second capacitor, and the third drain is connected to the first end of the first capacitor;
  • the second end of the first capacitor and the second end of the second capacitor are connected to the common electrode.
  • a pixel electrode is further formed in the pixel unit, a first source of the first switch tube is connected to the signal transmission line through a first via hole, and a second drain of the second switch tube is The data line is connected through a second via, the second source of the second switch is connected to the pixel electrode through a third via; the third source and the pixel of the third switch pass Four via connections.
  • the common electrode and the first gate line and the second gate line are disposed in parallel and in the same layer, and the data line is located above the first gate line and the second gate line.
  • An active drain pattern is formed over the common electrode, the source drain pattern and the data line are disposed in the same layer, and the source drain pattern is located above the active layer pattern.
  • a gate insulating layer is formed on the active layer pattern, and a gate layer including a first gate, a second gate, and a third gate is formed on the gate insulating layer, the gate layer An intermediate layer is formed on the intermediate layer, a pixel electrode layer is formed on the intermediate layer, an insulating layer is formed on the pixel electrode layer, and a common electrode layer is formed on the insulating layer.
  • Vp is the initial voltage value of the second node, and Clc is the capacitance of the second capacitor
  • ACIc is the capacitance change value of the second capacitor.
  • the present invention also provides a touch sensing panel comprising the above touch sensing circuit.
  • the present invention also provides a touch sensitive display device comprising the above touch sensing panel.
  • the method further includes: a facing substrate disposed opposite to the touch sensing panel, and a liquid crystal encapsulated between the touch sensing panel and the opposite substrate, wherein the first capacitor is a storage capacitor, The second capacitor is a liquid crystal capacitor.
  • the present invention further provides a touch sensing method, the touch sensing method is based on the touch sensing circuit, the touch sensing circuit includes: a first gate line, a second gate line, a data line, a signal transmission line, and a common electrode, wherein the a gate line, the second gate line and the data line define a plurality of pixel units, wherein the pixel unit is formed with a first switch tube, a second switch tube and a third switch tube, and the signal transmission line is connected to a signal processing unit; the third switch tube is connected in series between the first switch tube and the second switch tube; a connection between the first switch tube and the third switch tube forms a first node, a second node is formed at a junction of the second switch tube and the third switch tube, and an unvariable first capacitor is formed between the first node and the common electrode, and the second node and the common Forming a variable second capacitor between the electrodes; the signal transmission line is connected to the second switch tube, and the data line is connected to the first switch tube;
  • the touch sensing method includes:
  • the second switch tube is turned on under the control of the first gate line, and outputs a sensing signal to the signal processor through the signal transmission line, so that the signal processor determines whether there is any Touch action occurs;
  • the first switching transistor and the third switching transistor are turned on under the control of the second gate line, and the data line writes a pixel voltage to the first node and the second node.
  • the panel and the touch sensing display device the third switch tube is added to the touch sensing circuit, and the first node and the third switch tube form a first node, a second node is formed at a junction of the second switch tube and the third switch tube, a first capacitor is formed between the first node and the common electrode, a second capacitor is formed between the second node and the common electrode, and the signal transmission line is connected to the second switch tube.
  • FIG. 1 is a schematic structural view of a touch sensing circuit in the prior art
  • FIG. 2 is a schematic diagram of liquid crystal arrangement when a liquid crystal panel has no touch
  • FIG. 3 is a schematic view showing a liquid crystal arrangement when a liquid crystal panel has a touch
  • FIG. 4 is a schematic structural diagram of a touch sensing circuit according to Embodiment 1 of the present invention
  • FIG. 5 is a schematic diagram of application of a touch sensing circuit in Embodiment 1;
  • Figure 6 is a cross-sectional view taken along the line A-A in Figure 5;
  • Figure 7 is a cross-sectional view taken along line B-B of Figure 5.
  • the touch sensing circuit includes: a first gate line, a second gate line, a data line, a signal transmission line, and a common electrode.
  • the first gate line, the second gate line and the data line define a plurality of pixel units, and the first switching tube T1, the second switching tube 2 and the third switching tube 3 are formed in the pixel unit, and the signal transmission line is connected to the signal according to the signal.
  • the signal processor 101 determines whether there is a touch action, and the third switch tube 3 is connected in series between the first switch tube T1 and the second switch tube 2; the connection between the first switch tube T1 and the third switch tube 3 is formed.
  • the first node Q, the junction of the second switch tube T2 and the third switch tube T3 forms a second node P, and the first node Q and the common electrode Vcom form an immutable first capacitor Cst, and the second node P and A variable second capacitor Clc is formed between the common electrodes Vcom; the signal transmission line is connected to the second switching transistor T2, and the data line is connected to the first switching transistor T1.
  • the first switch tube T1 includes: an active layer pattern, a first gate, a first source, and a first drain
  • the second switch T2 includes: an active layer pattern, a second gate, and a second source
  • the third switch tube T3 includes: an active layer pattern, a third gate, a third source, and a third a drain; wherein, the first source is connected to the data line, the first drain and the third drain are connected to the first node Q, the third source and the second source are connected to the second node P, and the second drain Connected to the signal transmission line, the first gate and the third gate are connected to the second gate line, and the second gate is connected to the first gate line.
  • the first gate, the second gate and the third gate are disposed in the same layer, the first source, the second source, the third source, the first drain, the second drain and the third drain Same layer setting.
  • the first drain of the first switch T1 is connected to the first end of the first capacitor Cst; the second source of the second switch T2 is connected to the first end of the second capacitor Clc; and the third switch T3
  • the third source is connected to the first end of the second capacitor Clc, and the third drain of the third switch T3 is connected to the first end of the first capacitor Cst; the second end of the first capacitor Cst and the second capacitor Clc The second end is connected to the common electrode Vcom.
  • the difference in voltage variation of the second node P is:
  • Vp ' is the voltage change value of the second node P
  • Vp is the initial value of the voltage of the second node P
  • Clc is the initial value of the capacitance of the second capacitor
  • AClc is the capacitance change value of the second capacitor.
  • the voltage change difference value AVp is transmitted to the signal processing unit 101 through the signal transmission line, and the signal processing unit 101 compares the voltage change difference value AVp and the reference voltage Vref to determine The occurrence of the touch.
  • FIG. 5 is a schematic view showing the application of the touch sensing circuit in the first embodiment
  • FIG. 6 is a cross-sectional view taken along line AA of FIG. 5
  • FIG. 7 is a cross-sectional view taken along line BB of FIG. 5, as shown in FIG. 5, FIG. 6, and FIG.
  • the touch sensing circuit includes: a gate line 505, a data line 508, a signal transmission line 512, and a common electrode 506.
  • the gate line 505 and the data line 508 define a plurality of pixel units, and the pixel unit 507 and the first switch tube are formed in the pixel unit.
  • the third switch tube 502 is connected to the first switch tube 500 and the second switch tube 509; the connection between the first switch tube 500 and the third switch tube 502 forms the first a node Q, a junction of the second switch 509 and the third switch 502 forms a second node P, and a first capacitor 503 is formed between the first node Q and the common electrode Vcom, and the first end of the first capacitor 503 is active.
  • the first end of the first capacitor 503 corresponds to the first node Q in FIG. 5, and the second end of the first capacitor 503 is the common electrode 506.
  • Second node P and common electrode A second capacitor Clc is formed between Vcom; the signal transmission line 512 is connected to the second switching transistor 509.
  • the pixel electrode 507 is further formed in the pixel unit.
  • the first source 504 of the first switch 500 and the signal transmission line 512 are connected through the first via 513.
  • the second drain 511 of the second switch 509 and the data line 508 The second source 510 of the second switch 509 is connected to the pixel electrode 507 through the third via 516; the third source 501 of the third switch 502 and the pixel electrode 507 pass the fourth pass.
  • the holes 515 are connected.
  • the common electrode and the first gate line and the second gate line are disposed in parallel and in the same layer, and the data line is located above the first gate line and the second gate line, specifically, the first gate line and the second gate line Taking the gate line 505 as an example for description, the common electrode 506 and the gate line 505 are arranged in parallel and in the same layer, and the data line 508 is located above the gate line 505, and an active drain pattern, source and drain patterns and data are formed over the common electrode 506. Line 508 is disposed in the same layer, and the source drain pattern is located above the active layer pattern 603.
  • a gate insulating layer 604 is formed over the active layer pattern 603, and the material of the gate insulating layer 604 may be, for example, a silicon oxide compound (SiOx).
  • a buffer layer is formed under the active layer pattern 603, and the buffer layer includes a silicon nitride compound 601 (SiNx) and a silicon oxide compound 602 (SiOx).
  • a gate layer 605 including a first gate, a second gate, and a third gate is formed on the gate insulating layer 604, wherein the gate layer may be a single metal layer; or the gate layer may also be a metal composite
  • the material of the gate layer may be AlNd/Cr/CrNx, AlNd/Mo, Mo/AlNd/Mo, Al, Al/Mo or Mo/Al/Mo, or may be composed of Cu and other buffer metals, for example Mo, Nb, Ti, etc.
  • An intermediate layer is formed on the gate layer 605, the intermediate layer includes a silicon nitride compound 606 (SiNx) and a silicon oxide compound 607 (SiOx), and an organic film layer 608 is formed on the intermediate layer, and the organic film layer 608 is used for
  • the planarization function is performed to reduce the parasitic capacitance between the data line 508 and the common electrode 506.
  • the pixel electrode layer 609 is formed on the organic film layer 608, and the insulating layer 610 is formed on the pixel electrode layer 609.
  • the insulating layer 610 is formed.
  • the material may be, for example, a silicon nitride compound (SiNx).
  • a common electrode layer 611 is formed on the insulating layer 610.
  • the pixel electrode layer 609, the insulating layer 610 and the common electrode layer 611 form a second capacitor Clc, and the second capacitor Clc may be a liquid crystal capacitor.
  • the silicon nitride compound 701 (SiNx) and the silicon oxide compound 702 (SiOx) in FIG. 7 correspond to the silicon nitride compound 601 (SiNx) and the silicon oxide compound 602 (SiOx) in the buffer layer in FIG. 6, respectively.
  • the gate insulating layer 704 in FIG. 6 corresponds to the gate insulating layer 604 in FIG. 6, and the silicon nitride compound 706 (SiNx) and the silicon oxide compound 707 (SiOx) in FIG. 7 correspond to those in FIG.
  • the first switching transistor T1, the second switching transistor ⁇ 2, and the third switching transistor ⁇ 3 are ⁇ -type polysilicon thin film transistors.
  • the active region of the polysilicon thin film transistor is composed of polysilicon, and the source and drain of the polysilicon thin film transistor are formed by ion doping. Therefore, the polysilicon thin film transistor has better conductivity, and when used as a switching transistor, the volume can be reduced.
  • this embodiment can also employ an amorphous silicon thin film transistor or an oxide thin film transistor.
  • Vp2 ' Vp*Clc/ (Clc+AClc)
  • the touch sensing circuit in this embodiment has a touch occurrence and no When the touch occurs, the difference in voltage change of the second node P point is four times larger than that of the touch sensing circuit in the prior art, thereby improving the sensitivity of the touch sensing.
  • the touch sensing circuit includes: a gate line, a data line, a signal transmission line, and a common electrode, wherein the gate line and the data line define a plurality of pixel units, and the pixel unit is formed with a pixel electrode, the first a switch tube, a second switch tube and a third switch tube; the third switch tube is connected to the first switch tube and the second switch tube; the connection between the first switch tube and the third switch tube forms a first node, and the second switch tube Forming a second node at a junction with the third switch tube, forming a first capacitor between the first node and the common electrode, forming a second capacitor between the second node and the common electrode; and connecting the signal transmission line to the second switch tube.
  • the third switch tube By adding a third switch tube in the touch sensing circuit, when the third switch tube is turned on, the pixel voltage is written to the pixel electrode through the data line, and when the third switch tube is turned off, when the touch occurs, the pixel voltage changes.
  • the changed voltage signal is transmitted to the signal processing unit through the signal transmission line and compared with the reference voltage in the signal transmission unit, thereby determining the occurrence of the touch, which can improve the sensitivity of the touch sensing.
  • the second embodiment of the present invention provides a touch sensing method, where the touch sensing method is based on a touch sensing circuit, the touch sensing circuit includes: a first gate line, a second gate line, a data line, a signal transmission line, and a common electrode, the first The gate line, the second gate line and the data line define a plurality of pixel units, wherein the pixel unit is formed with a first switching tube, a second switching tube and a third switching tube, and the signal transmission line is connected to the signal a third switching tube is connected in series between the first switching tube and the second switching tube; a connection between the first switching tube and the third switching tube forms a first node, a second node is formed at a junction of the second switch tube and the third switch tube, and an unvariable first capacitor is formed between the first node and the common electrode, and the second node and the common electrode Forming a variable second capacitor; the signal transmission line is connected to the second switch tube, and the data line is connected to the first switch tube;
  • the touch sensing method includes:
  • Step S10 the second switch tube is turned on under the control of the first gate line, and outputs a sensing signal to the signal processor through the signal transmission line, for the signal processor to sense according to A change in the signal to determine whether a touch action has occurred;
  • Step S1 the first switch tube and the third switch tube are turned on under the control of the second gate line, and the data line writes a pixel voltage to the first node and the second node.
  • the touch sensing circuit in this embodiment uses the touch sensing circuit in the first embodiment.
  • the touch sensing method is based on a touch sensing circuit, by adding a third switching tube in the touch sensing circuit, and writing a pixel voltage to the pixel electrode through the data line when the third switching tube is turned on.
  • the third switch is turned off, when a touch occurs, the pixel voltage changes, and the changed voltage signal is transmitted to the signal processing unit through the signal transmission line and compared with the reference voltage in the signal transmission unit, thereby determining the occurrence of the touch. It can improve the sensitivity of touch sensing.
  • Embodiment 3 of the present invention provides a touch sensing panel, which includes a touch sensing circuit.
  • the touch sensing circuit can adopt the touch sensing circuit described in the first embodiment, and details are not described herein again.
  • the touch sensing panel includes a touch sensing circuit, by adding a third switching tube in the touch sensing circuit, and writing a pixel voltage to the pixel electrode through the data line when the third switching tube is turned on
  • the third switch is turned off, when a touch occurs, the pixel voltage changes, and the changed voltage signal is transmitted to the signal processing unit through the signal transmission line and compared with the reference voltage in the signal transmission unit, thereby determining the occurrence of the touch. It can improve the sensitivity of touch sensing.
  • Embodiment 4 of the present invention provides a touch sensing display device, and the touch sensing display device includes a touch sensing panel.
  • the touch sensing panel may be the touch sensing panel described in the foregoing third embodiment, and details are not described herein again.
  • the touch sensitive display device may further include: a facing substrate disposed opposite to the touch sensing panel, and a liquid crystal encapsulated between the touch sensing panel and the opposite substrate, wherein the first capacitor is a storage capacitor, and the second capacitor It is a liquid crystal capacitor.
  • the touch-sensing display device includes a touch-sensing circuit, by adding a third switch tube in the touch-sensing circuit, and writing the pixel electrode through the data line when the third switch tube is turned on.
  • Pixel voltage when the third switch is turned off, when a touch occurs, the pixel voltage changes, and the changed voltage signal is transmitted to the signal processing unit through the signal transmission line and compared with the reference voltage in the signal transmission unit, thereby determining the touch Occurs, which can increase the sensitivity of touch sensing.

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Abstract

一种触摸感应电路及其方法、面板和触摸感应显示装置，该触摸感应电路包括：第一栅线、第二栅线、数据线、信号传输线和公共电极，第一栅线、第二栅线和数据线限定出多个像素单元，像素单元内形成有第一开关管、第二开关管和第三开关管，信号传输线连接至信号处理器；第三开关管串联在第一开关管和第二开关管之间；第一开关管与第三开关管的连接处形成第一节点，第二开关管与第三开关管的连接处形成第二节点，第一节点与公共电极之间形成有不可变的第一电容，第二节点与公共电极之间形成有可变的第二电容；信号传输线与第二开关管连接，数据线与第一开关管连接。提高了触摸感应的灵敏度。

Description

触摸感应电路及其方法、 面板和触摸感应显示装置
技术领域
本发明涉及触摸感应技术领域， 特别涉及一种触摸感应电路及其 方法、 面板和触摸感应显示装置。 背景技术
目前， 内嵌式触摸屏具有整合在感应面板中、 从而使整个面板集 成度更高、 面板更加轻薄等优点而被广泛应用。 内嵌式触摸屏可以集 成触摸和感应功能。 图 1为现有技术中的触摸感应电路的结构示意图， 如图 1 所示， 该触摸感应电路包括： 数据线、 第一栅线、 第二栅线、 信号传输线、 液晶电容 Cl c、 存储电容 Cst、 公共电极、 信号处理器、 薄膜晶体管 Tl、 薄膜晶体管 Τ2， 其中， 薄膜晶体管 T1 的源极与数据 线连接， 薄膜晶体管 T1 的栅极与第二栅线连接， 薄膜晶体管 T1 的漏 极与薄膜晶体管 Τ2 的源极连接， 薄膜晶体管 Τ2 的漏极与信号传输线 连接， 薄膜晶体管 Τ2 的栅极与第一栅线连接。 薄膜晶体管 T1 与薄膜 晶体管 Τ2的连接处形成第二节点 Ρ点， 第二节点 Ρ点与液晶电容 Cl c 的一端和存储电容 Cst 的一端连接， 公共电极与液晶电容 Clc 的另一 端和存储电容 Cst 的另一端连接， 公共电极提供的电压为 Vcom。 图 2 为液晶面板无触摸发生时的液晶排布示意图， 图 3 为液晶面板有触摸 发生时的液晶排布示意图， 由图 2和图 3可知， 由于液晶作为各向异 性的一种介质， 液晶电容 Clc 与液晶分子的取向和间距有关， 当触摸 液晶面板时， 液晶电容 Clc会发生变化， 而存储电容 Cst不会发生变 化。
如图 1所示， 该触摸感应电路的工作原理为： 假设在上一帧画面 中写入像素单元的电压为 Vp，因此存储在液晶电容 Cl c和存储电容 Cst 中的电荷为：
Qp=Vp* ( Cst+Clc ) 当第一栅线处施加高电平时， 薄膜晶体管 T2导通， 第二节点的电 压 Vp通过信号传输线传输至信号处理器 101， 信号处理器比较第二节 点 P点的电压 Vp和参考电压 Vref 以判断触摸是否发生。 具体地， 无 触摸发生时， 第二节点 P点电压为 Vp; 有发生触摸时， 液晶电容 Clc 变化为 Δ Clc ， 由 电荷守恒原理可知 ， P 点 电压变为 ： νΡΓ =Vp*Clc/ (Clc+AClc) , 则有触摸发生时和无触摸发生时 P 点电 压变化为：
△Vpl=Vpl， -Vp^Vp*AClc/ ( Cst+Clc ) / ( Cst+Clc )
由上式可知， AVpl的大小直接决定了触摸检测的灵敏度。
现有技术存在如下问题： 有触摸发生时和无触摸发生时的 Ρ点电 压变化 AVpl太小， 降低了触摸感应的灵敏度。 发明内容
本发明提供一种触摸感应电路及其方法、 面板和触摸感应显示装 置， 其可以提高触摸感应的灵敏度。
为实现上述目的， 本发明提供了一种触摸感应电路， 包括： 第一 栅线、 第二栅线、 数据线、 信号传输线和公共电极， 所述第一栅线、 所述 第二栅线和所述数据线限定出多个像素单元，所述像素单元内形成有第一 开关管、 第二开关管和第三开关管， 所述信号传输线连接至用于根据信号 变化而判断是否有触摸动作发生的信号处理器；
所述第三开关管串联于所述第一开关管和所述第二开关管之间； 所述第一开关管与所述第三开关管的连接处形成第一节点， 所述第 二开关管与所述第三开关管的连接处形成第二节点， 所述第一节点与所述 公共电极之间形成有不可变的第一电容， 所述第二节点与所述公共电极之 间形成有可变的第二电容；
所述信号传输线与所述第二开关管连接， 所述数据线与所述第一 开关管连接。
可选地， 所述第一开关管包括： 有源层图形、 第一栅极、 第一源极、 第一漏极， 所述第二开关管包括： 有源层图形、 第二栅极、 第二源极、 第 二漏极， 所述第三开关管包括： 有源层图形、 第三栅极、 第三源极、 第三 漏极；
所述第一源极与所述数据线连接， 所述第一漏极与所述第三漏极连 接至所述第一节点， 所述第三源极与所述第二源极连接至所述第二节点， 所述第二漏极与所述信号传输线连接， 所述第一栅极和所述第三栅极与所 述第二栅线连接， 所述第二栅极与所述第一栅线连接。
可选地， 所述第一栅极、 所述第二栅极和所述第三栅极同层设置， 所述第一源极、 所述第二源极、 所述第三源极、 所述第一漏极、 所述第二 漏极和所述第三漏极同层设置。
可选地， 所述第一漏极与所述第一电容的第一端连接；
所述第二源极与所述第二电容的第一端连接；
所述第三源极与所述第二电容的第一端连接， 所述第三漏极与所 述第一电容的第一端连接；
所述第一电容的第二端和所述第二电容的第二端与所述公共电极 连接。
可选地，所述像素单元内还形成有像素电极，所述第一开关管的第 一源极与所述信号传输线通过第一过孔连接； 所述第二开关管的第二漏极 与所述数据线通过第二过孔连接， 所述第二开关管的第二源极与所述像素 电极通过第三过孔连接； 所述第三开关管的第三源极与像素电极通过第四 过孔连接。
可选地， 所述公共电极和所述第一栅线、 所述第二栅线平行且同层 设置， 所述数据线位于所述第一栅线和所述第二栅线的上方， 所述公共电 极上方形成有源漏极图形， 所述源漏极图形和所述数据线同层设置， 所述 源漏极图形位于所述有源层图形的上方。
可选地， 所述有源层图形上方形成有栅绝缘层， 所述栅绝缘层上 形成有包括第一栅极、 第二栅极和第三栅极的栅极层， 所述栅极层上 形成有中间层， 所述中间层上形成有像素电极层， 所述像素电极层上 形成有绝缘层， 所述绝缘层上形成有公共电极层。
可选地， 当受到触摸时， 所述第二节点的电压变化差值为： AVp=Vp'-Vp«Vp*ACIc/Clc/Clc, 其中， Vp'为所述第二节点的电压变 化值， Vp为所述第二节点的电压初始值， Clc为所述第二电容的电容 初始值， ACIc为所述第二电容的电容变化值。
本发明还提供了一种触摸感应面板， 包括上述触摸感应电路。 本发明还提供了一种触摸感应显示装置，包括上述触摸感应面板。 可选地， 还包括： 与所述触摸感应面板相对设置的对向基板， 及 封装于所述触摸感应面板和所述对向基板之间的液晶， 所述第一电容 为存储电容， 所述第二电容为液晶电容。
本发明另外提供了一种触摸感应方法， 所述触摸感应方法基于上 述触摸感应电路， 该触摸感应电路包括： 第一栅线、第二栅线、数据线、 信号传输线和公共电极， 所述第一栅线、 所述第二栅线和所述数据线限定 出多个像素单元， 所述像素单元内形成有第一开关管、 第二开关管和第三 开关管， 所述信号传输线连接至信号处理器； 所述第三开关管串联于所述 第一开关管和所述第二开关管之间； 所述第一开关管与所述第三开关管的 连接处形成第一节点， 所述第二开关管与所述第三开关管的连接处形成第 二节点， 所述第一节点与所述公共电极之间形成有不可变的第一电容， 所 述第二节点与所述公共电极之间形成有可变的第二电容； 所述信号传输 线与所述第二开关管连接， 所述数据线与所述第一开关管连接；
该触摸感应方法包括：
所述第二开关管在所述第一栅线的控制下导通， 并通过所述信号 传输线输出感测信号到所述信号处理器， 以供所述信号处理器根据信 号变化而判断是否有触摸动作发生；
所述第一开关管和所述第三开关管在所述第二栅线的控制下导通， 数据线向所述第一节点和所述第二节点写入像素电压。
本发明提供的触摸感应电路及其方法、 面板和触控感应显示装置 中， 通过在触摸感应电路中增加第三开关管， 第一开关管与第三开关管 的连接处形成第一节点， 第二开关管与第三开关管的连接处形成第二节 点， 第一节点与公共电极之间形成第一电容， 第二节点与公共电极之间形 成第二电容； 信号传输线与第二开关管连接， 通过在触摸感应电路中增 加第三开关管， 在第三开关管导通时， 通过数据线对像素电极写入像 素电压， 在第三开关管截止时， 有触摸发生时， 像素电压发生变化， 通过信号传输线将变化的电压信号传输至信号处理单元并与信号传输 单元中的参考电压比较， 从而判断出触摸的发生， 其可以提高触摸感 应的灵敏度。 附图说明
图 1为现有技术中的触摸感应电路的结构示意图；
图 2为液晶面板无触摸发生时的液晶排布示意图；
图 3为液晶面板有触摸发生时的液晶排布示意图；
图 4为本发明实施例一提供的触摸感应电路的结构示意图； 图 5为实施例一中的触摸感应电路的应用示意图；
图 6为图 5中的 A-A向剖面图；
图 7为图 5中的 B-B向剖面图。 具体实施方式
为使本领域技术人员更好地理解本发明的技术方案， 下面结合附 图对本发明提供的一种触摸感应电路及其方法、 感应面板和触摸感应 显示装置作进一步详细描述。
图 4为本发明实施例一提供的触摸感应电路的等效电路示意图， 如图 4所示， 该触摸感应电路包括： 第一栅线、 第二栅线、 数据线、 信 号传输线和公共电极，第一栅线、第二栅线和数据线限定出多个像素单元， 像素单元内形成有第一开关管 Tl、 第二开关管 Τ2和第三开关管 Τ3， 信号 传输线连接至用于根据信号变化而判断是否有触摸动作发生的信号处理 器 101 ;第三开关管 Τ3串联于第一开关管 T1和第二开关管 Τ2之间；第一 开关管 T1与第三开关管 Τ3的连接处形成第一节点 Q，第二开关管 T2与第 三开关管 T3的连接处形成第二节点 P， 第一节点 Q与公共电极 Vcom之间 形成有不可变的第一电容 Cst，第二节点 P与公共电极 Vcom之间形成有可 变的第二电容 Clc ;信号传输线与第二开关管 T2连接， 数据线与第一开 关管 T1连接。
进一步地， 第一开关管 T1包括： 有源层图形、第一栅极、第一源极、 第一漏极， 第二开关管 T2包括： 有源层图形、 第二栅极、 第二源极、 第 二漏极， 第三开关管 T3包括： 有源层图形、 第三栅极、 第三源极、 第三 漏极； 其中， 第一源极与数据线连接， 第一漏极与第三漏极连接至第一节 点 Q， 第三源极与第二源极连接至第二节点 P， 第二漏极与信号传输线连 接， 第一栅极和第三栅极与第二栅线连接， 第二栅极与第一栅线连接。
优选地， 第一栅极、 第二栅极和第三栅极同层设置， 第一源极、 第 二源极、 第三源极、 第一漏极、 第二漏极和第三漏极同层设置。
具体地，第一开关管 T1的第一漏极与第一电容 Cst的第一端连接； 第二开关管 T2的第二源极与第二电容 Clc的第一端连接； 第三开关管 T3的第三源极与第二电容 Clc的第一端连接，第三开关管 T3的第三漏 极与第一电容 Cst 的第一端连接； 第一电容 Cst 的第二端和第二电容 Clc的第二端与公共电极 Vcom连接。
优选地， 当受到触摸时， 第二节点 P 的电压变化差值为：
△ Vp=Vp ' -Vp^Vp*AClc/Clc/Clc , 其中， Vp ' 为第二节点 P 的电压 变化值， Vp为第二节点 P 的电压初始值， Clc为第二电容的电容初始 值， AClc为第二电容的电容变化值。 当栅线打开并施加高电平时， 第 二开关管 T2导通， 有触摸发生时， 第二节点 P的电压 Vp变化为 Vp ' ， 此时， 第二节点 P 在有触摸发生和无触摸发生时的电压变化差值为：
△ Vp=Vp ' -Vp^Vp*AClc/Clc/Clc , 通过信号传输线传输该电压变化 差值 AVp至信号处理单元 101， 信号处理单元 101 比较该电压变化差 值 AVp和参考电压 Vref , 从而判断触摸的发生。
图 5为实施例一中的触摸感应电路的应用示意图， 图 6为图 5中 的 A-A向剖面图， 图 7为图 5中的 B-B向剖面图， 如图 5、 图 6和图 7 所示， 该触摸感应电路包括： 栅线 505、 数据线 508、 信号传输线 512和 公共电极 506， 栅线 505和数据线 508限定出多个像素单元， 像素单元内 形成有像素电极 507、第一开关管 500、第二开关管 509和第三开关管 502 ; 第三开关管 502与第一开关管 500和第二开关管 509连接;第一开关管 500 与第三开关管 502的连接处形成第一节点 Q， 第二开关管 509与第三开关 管 502的连接处形成第二节点 P，第一节点 Q与公共电极 Vcom之间形成第 一电容 503， 第一电容 503的第一端为有源层图形上方的源漏极图形， 其 中， 有源层的材料为多晶硅。 第一电容 503的第一端对应于图 5中的第一 节点 Q，第一电容 503 的第二端为公共电极 506。 第二节点 P与公共电极 Vcom之间形成第二电容 Clc; 信号传输线 512与第二开关管 509连接。 其中， 像素单元内还形成有像素电极 507， 第一开关管 500的第一 源极 504与信号传输线 512通过第一过孔 513连接； 第二开关管 509的 第二漏极 511与数据线 508通过第二过孔 514连接， 第二开关管 509的第 二源极 510与像素电极 507通过第三过孔 516连接； 第三开关管 502的第 三源极 501与像素电极 507通过第四过孔 515连接。
本实施例中， 公共电极和第一栅线、 第二栅线平行且同层设置， 数 据线位于第一栅线和第二栅线的上方， 具体地， 第一栅线和第二栅线以栅 线 505为例进行描述， 则公共电极 506和栅线 505平行且同层设置， 数据 线 508位于栅线 505的上方， 公共电极 506上方形成有源漏极图形， 源漏 极图形和数据线 508同层设置， 源漏极图形位于有源层图形 603的上方。 有源层图形 603上方形成有栅绝缘层 604，栅绝缘层 604的材料例如可 以为氧化硅化合物 （SiOx) 。 在有源层图形 603的下方形成有缓冲层， 缓冲层包括氮化硅化合物 601 (SiNx) 和氧化硅化合物 602 (SiOx) 。
在栅绝缘层 604上形成有包括第一栅极、 第二栅极和第三栅极的 栅极层 605， 其中， 栅极层可以是单层金属层； 或者栅极层也可以是金 属复合层， 则栅极层的材料可以是 AlNd/Cr/CrNx、 AlNd/Mo、 Mo/AlNd/Mo、 Al、 Al/Mo或 Mo/Al/Mo， 也可以是由 Cu和其他缓冲金属 组成， 例如 Mo、 Nb和 Ti等。 在所述栅极层 605上形成有中间层， 中 间层包括氮化硅化合物 606 (SiNx) 和氧化硅化合物 607 (SiOx) ， 在 中间层上形成有有机膜层 608， 有机膜层 608用于起到平坦化的作用， 从而降低数据线 508与公共电极 506之间的寄生电容，在有机膜层 608 上形成有像素电极层 609， 在像素电极层 609上形成有绝缘层 610， 绝 缘层 610的材料例如可以为氮化硅化合物 （SiNx) 。 在绝缘层 610上 形成有公共电极层 611。 其中像素电极层 609、 绝缘层 610和公共电极 层 611形成第二电容 Clc， 第二电容 Clc可以为液晶电容。 其中， 图 7 中的氮化硅化合物 701 (SiNx) 和氧化硅化合物 702 (SiOx) 对应图 6 中的缓冲层中的氮化硅化合物 601 (SiNx)和氧化硅化合物 602 (SiOx) 分别对应， 图 Ί中的栅绝缘层 704对应图 6中栅绝缘层 604， 图 7中的 氮化硅化合物 706 (SiNx) 和氧化硅化合物 707 (SiOx) 对应图 6中的 中间层中的氮化硅化合物 606 ( SiNx) 和氧化硅化合物 607 ( SiOx) ， 图 7中的走线 708对应图 6中的数据线 508和信号传输线 512，图 7中 的有机膜层 709对应图 6中的有机膜层 609，图 7中的氮化硅层 710对 应图 6中的绝缘层 610，绝缘层 610例如可以为氮化硅化合物（SiNx )。
本实施例中， 优选地， 第一开关管 Tl、 第二开关管 Τ2、 第三开关 管 Τ3为 Ν型多晶硅薄膜晶体管。 多晶硅薄膜晶体管的有源区由多晶硅 构成， 多晶硅薄膜晶体管的源漏极通过离子掺杂形成， 因此， 多晶硅 薄膜晶体管具有更好的导电性能， 在作为开关晶体管时， 可以减小体 积。 当然， 本实施例也可以采用非晶硅薄膜晶体管或者氧化物薄膜晶 体管。
下面结合附图 4和附图 5对本实施例的触摸感应电路的工作原理 进行详细说明， 如图 4 所示， 假设在上一帧画面中写入像素单元的电 压为 Vp， 因此存储在液晶电容 Clc和存储电容 Cst中的电荷为：
Qp=Vp* ( Cst+Clc ) 具体地， 在无触摸发生时， 第二节点 P点电压 为上一帧画面中写入像素单元的电压 Vp; 在有发生触摸时， 液晶电容 Clc变化为 AClc , 由于第三开关管 T3截止， 由电荷守恒， 第二节点 P 点电压变为：
Vp2 ' =Vp*Clc/ (Clc+AClc)
通过上式， 有触摸发生时和无触摸发生时第二节点 P点电压变化 差值为： AVp2=Vp2， -Vp^Vp*AClc/Clc/Clc
现有技术中， 有触摸发生时和无触摸发生时第二节点 P点电压变 化差值为：
△Vpl=Vpl， -Vp^Vp*AClc/ ( Cst+Clc ) / ( Cst+Clc )
相比较， 在液晶电容 C1C变化量相同的情况下：
AVp2/AVpl= ( Cst+Clc) * (Cst+Clc) /Clc/Clc
若液晶电容 Clc 和存储电容 Cst 的电容值为 200fF， 则 AVp2/AVpl=40 也就是说， 在液晶电容变化 AClc 相同的情况下， 本 实施例中的触摸感应电路在有触摸发生时和无触摸发生时第二节点 P 点电压变化差值比现有技术中的触摸感应电路增大 4倍，从而提高了触 摸感应的灵敏度。 本实施例提供的触摸感应电路中， 该触摸感应电路包括： 栅线、 数据线、 信号传输线和公共电极， 栅线和数据线限定出多个像素单元， 像 素单元内形成有像素电极、 第一开关管、 第二开关管和第三开关管； 第三 开关管与第一开关管和第二开关管连接； 第一开关管与第三开关管的连接 处形成第一节点， 第二开关管与第三开关管的连接处形成第二节点， 第一 节点与公共电极之间形成第一电容， 第二节点与公共电极之间形成第二电 容； 信号传输线与第二开关管连接。 通过在触摸感应电路中增加第三 开关管， 在第三开关管导通时， 通过数据线对像素电极写入像素电压， 在第三开关管截止时， 有触摸发生时， 像素电压发生变化， 通过信号 传输线将变化的电压信号传输至信号处理单元并与信号传输单元中的 参考电压比较， 从而判断出触摸的发生， 其可以提高触摸感应的灵敏 度。
本发明实施例二提供一种触摸感应方法， 该触摸感应方法基于触 摸感应电路， 该触摸感应电路包括： 第一栅线、 第二栅线、 数据线、 信 号传输线和公共电极， 所述第一栅线、 所述第二栅线和所述数据线限定出 多个像素单元， 所述像素单元内形成有第一开关管、 第二开关管和第三开 关管， 所述信号传输线连接至信号处理器； 所述第三开关管串联于所述第 一开关管和所述第二开关管之间； 所述第一开关管与所述第三开关管的连 接处形成第一节点， 所述第二开关管与所述第三开关管的连接处形成第二 节点， 所述第一节点与所述公共电极之间形成有不可变的第一电容， 所述 第二节点与所述公共电极之间形成有可变的第二电容； 所述信号传输线 与所述第二开关管连接， 所述数据线与所述第一开关管连接；
该触摸感应方法包括：
步骤 S10、 所述第二开关管在所述第一栅线的控制下导通， 并通 过所述信号传输线将感测信号输出到所述信号处理器， 以供所述信号 处理器根据感测信号的变化而判断是否有触摸动作发生；
步骤 Sl l、所述第一开关管和所述第三开关管在所述第二栅线的控制 下导通， 数据线向所述第一节点和所述第二节点写入像素电压。
本实施例中的触摸感应电路采用上述实施例一中的触摸感应电 路， 其具体实施方式请参见上述实施例一， 此处不再赘述。 本实施例提供的触摸感应方法中， 该触摸感应方法基于触摸感应 电路， 通过在触摸感应电路中增加第三开关管， 在第三开关管导通时， 通过数据线对像素电极写入像素电压， 在第三开关管截止时， 有触摸 发生时， 像素电压发生变化， 通过信号传输线将变化的电压信号传输 至信号处理单元并与信号传输单元中的参考电压比较， 从而判断出触 摸的发生， 其可以提高触摸感应的灵敏度。
本发明实施例三提供一种触摸感应面板， 该触摸感应面板包括触 摸感应电路。 其中， 触摸感应电路可采用上述实施例一所述的触摸感 应电路， 此处不再赘述。
本实施例提供的触摸感应面板中， 该触摸感应面板包括触摸感应 电路， 通过在触摸感应电路中增加第三开关管， 在第三开关管导通时， 通过数据线对像素电极写入像素电压， 在第三开关管截止时， 有触摸 发生时， 像素电压发生变化， 通过信号传输线将变化的电压信号传输 至信号处理单元并与信号传输单元中的参考电压比较， 从而判断出触 摸的发生， 其可以提高触摸感应的灵敏度。
本发明实施例四提供一种触摸感应显示装置， 该触摸感应显示装 置包括触摸感应面板。 其中， 触摸感应面板可采用上述实施例三所述 的触摸感应面板， 此处不再赘述。
进一步地， 触摸感应显示装置还可以还包括： 与触摸感应面板相 对设置的对向基板， 及封装于触摸感应面板和对向基板之间的液晶， 其中， 第一电容为存储电容， 第二电容为液晶电容。
本实施例提供的触摸感应显示装置中， 该触摸感应显示装置包括 触摸感应电路， 通过在触摸感应电路中增加第三开关管， 在第三开关 管导通时， 通过数据线对像素电极写入像素电压， 在第三开关管截止 时， 有触摸发生时， 像素电压发生变化， 通过信号传输线将变化的电 压信号传输至信号处理单元并与信号传输单元中的参考电压比较， 从 而判断出触摸的发生， 其可以提高触摸感应的灵敏度。
可以理解的是， 以上实施方式仅仅是为了说明本发明的原理而采 用的示例性实施方式， 然而本发明并不局限于此。 对于本领域内的普 通技术人员而言， 在不脱离本发明的精神和实质的情况下， 可以做出 各种变型和改进， 这些变型和改进也视为本发明的保护范围。

Claims

权 利 要 求 书
1、 一种触摸感应电路， 包括： 第一栅线、 第二栅线、 数据线、 信 号传输线和公共电极， 所述第一栅线、 所述第二栅线和所述数据线限定出 多个像素单元， 每个所述像素单元内具有第一开关管和第二开关管， 所述 第一开关管连接至数据线， 所述第二开关管连接至信号传输线， 所述信号 传输线连接至用于根据信号变化而判断是否有触摸动作发生的信号处理 器；
所述触摸感应电路的特征在于， 还包括第三开关管， 所述第三开 关管串联在所述第一开关管和所述第二开关管之间；
所述第一开关管与所述第三开关管的连接处形成第一节点， 所述第 二开关管与所述第三开关管的连接处形成第二节点， 不可变的第一电容设 置在所述第一节点与所述公共电极之间， 可变的第二电容设置在所述第二 节点与所述公共电极之间。
2、 根据权利要求 1所述的触摸感应电路， 其特征在于， 所述第一 开关管包括： 有源层图形、 第一栅极、 第一源极、 第一漏极， 所述第二开 关管包括： 有源层图形、 第二栅极、 第二源极、 第二漏极， 所述第三开关 管包括： 有源层图形、 第三栅极、 第三源极、 第三漏极；
所述第一源极与所述数据线连接， 所述第一漏极与所述第三漏极连 接至所述第一节点， 所述第三源极与所述第二源极连接至所述第二节点， 所述第二漏极与所述信号传输线连接， 所述第一栅极和所述第三栅极与所 述第二栅线连接， 所述第二栅极与所述第一栅线连接。
3、 根据权利要求 2所述的触摸感应电路， 其特征在于， 所述第一 栅极、 所述第二栅极和所述第三栅极同层设置， 所述第一源极、 所述第二 源极、 所述第三源极、 所述第一漏极、 所述第二漏极和所述第三漏极同层 设置。
4、 根据权利要求 2所述的触摸感应电路， 其特征在于， 所述第一 漏极与所述第一电容的第一端连接；
所述第二源极与所述第二电容的第一端连接；
所述第三源极与所述第二电容的第一端连接， 所述第三漏极与所 述第一电容的第一端连接；
所述第一电容的第二端和所述第二电容的第二端与所述公共电极 连接。
5、 根据权利要求 4所述的触摸感应电路， 其特征在于， 所述像素 单元内还形成有像素电极， 所述第一开关管的第一源极与所述信号传输 线通过第一过孔连接； 所述第二开关管的第二漏极与所述数据线通过第二 过孔连接， 所述第二开关管的第二源极与所述像素电极通过第三过孔连 接； 所述第三开关管的第三源极与像素电极通过第四过孔连接。
6、 根据权利要求 5所述的触摸感应电路， 其特征在于， 所述公共 电极和所述第一栅线、 所述第二栅线平行且同层设置， 所述数据线位于所 述第一栅线和所述第二栅线的上方， 所述公共电极上方形成有源漏极图 形， 所述源漏极图形和所述数据线同层设置， 所述源漏极图形位于所述有 源层图形的上方。
7、 根据权利要求 6所述的触摸感应电路， 其特征在于， 所述有源 层图形上方形成有栅绝缘层， 所述栅绝缘层上形成有包括第一栅极、 第二栅极和第三栅极的栅极层， 所述栅极层上形成有中间层， 所述中 间层上形成有像素电极层， 所述像素电极层上形成有绝缘层， 所述绝 缘层上形成有公共电极层。
8、 根据权利要求 1所述的触摸感应电路， 其特征在于， 当受到触 摸时，所述第二节点的电压变化值为： AVp=Vp'-Vp Vp*ACIc/Clc/Clc， 其中， Vp'为所述第二节点的电压变化值， Vp 为所述第二节点的电压 初始值， Clc为所述第二电容的电容初始值， ACIc为所述第二电容的 电容变化值。
9、一种触摸感应面板， 包括上述权利要求 1-8中任一所述的触摸 感应电路。
10、 一种触摸感应显示装置， 包括权利要求 9所述的触摸感应面 板。
11、 根据权利要求 10所述的触摸感应显示装置， 其特征在于， 还 包括： 与所述触摸感应面板相对设置的对向基板， 以及封装在所述触 摸感应面板和所述对向基板之间的液晶， 所述第一电容为存储电容， 所述第二电容为液晶电容。
12、 一种应用在触摸感应电路上的触摸感应方法， 其中所述触摸 感应电路包括： 第一栅线、 第二栅线、 数据线、 信号传输线和公共电极， 所述第一栅线、 所述第二栅线和所述数据线限定出多个像素单元， 每个所 述像素单元具有第一开关管、 第二开关管和第三开关管， 所述信号传输线 连接至信号处理器； 所述第三开关管串联在所述第一开关管和所述第二开 关管之间； 所述第一开关管与所述第三开关管的连接处形成第一节点， 所 述第二开关管与所述第三开关管的连接处形成第二节点， 所述第一节点与 所述公共电极之间形成有不可变的第一电容， 所述第二节点与所述公共电 极之间形成有可变的第二电容;所述信号传输线与所述第二开关管连接， 所述数据线与所述第一开关管连接；
所述触摸感应方法包括：
所述第二开关管在所述第一栅线的控制下导通， 感测信号通过所 述信号传输线输出到所述信号处理器， 所述信号处理器根据所述感测 信号的变化而判断是否有触摸动作发生；
所述第一开关管和所述第三开关管在所述第二栅线的控制下导通， 数据线向所述第一节点和所述第二节点写入像素电压。
PCT/CN2014/081119 2013-11-22 2014-06-30 触摸感应电路及其方法、面板和触摸感应显示装置 WO2015074419A1 (zh)

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