WO2015068912A1

WO2015068912A1 - Light emitting diode having uniform current diffusion structure

Info

Publication number: WO2015068912A1
Application number: PCT/KR2014/003132
Authority: WO
Inventors: 홍정우
Original assignee: 일진엘이디(주)
Priority date: 2013-11-08
Filing date: 2014-04-11
Publication date: 2015-05-14
Also published as: KR101541363B1; TW201519472A; KR20150053838A

Abstract

Provided is a light emitting diode having a uniform current diffusion structure, for increasing external quantum efficiency by preventing current concentration and for preventing localized deterioration or aging and the like. The diode comprises: a first electrode pad arranged on a second semiconductor layer by being spatially separated from a transparent electrode layer positioned on a light emitting structure comprising a first semiconductor layer, an active layer and the second semiconductor layer, and electrically connected, by a connection part, with a first branched electrode extended in a longitudinal direction of the first semiconductor layer; a first blocking layer formed on the light emitting structure so as to electrically insulate the first electrode pad and the connection part from the light emitting structure; on the second semiconductor layer, a second electrode pad for supplying current to the transparent electrode layer and a second branched electrode parallel with the first branched electrode; and a second blocking layer formed on the second semiconductor layer so as to electrically insulate the second electrode pad and the second branched electrode from the second semiconductor layer.

Description

Light Emitting Diode with Uniform Current Diffusion Structure

The present invention relates to a light emitting diode having a p electrode and an n electrode, and more particularly, to a light emitting diode that can improve light efficiency through uniform current diffusion in the active layer by preventing the concentration of current around the electrode. .

Light emitting diodes (LEDs) are devices that convert electrical energy into light and generally produce light in at least one active layer between layers doped with impurities of opposite polarity. That is, when bias is applied to both sides of the active layer, holes and electrons are injected into the active layer, and light is generated by recombination. Since light emitting diodes have a higher refractive index than air, much of the light generated by recombination of electrons and holes remains in the device. Such light is absorbed by various paths such as a thin film, a substrate, and an electrode before escaping to the outside, thereby reducing external quantum efficiency. An electrode for applying a bias to the active layer consists of an electrode pad for the package and a branch electrode extending from the electrode pad to substantially provide a bias to the active layer.

However, due to the current concentration phenomenon generated between the p-electrode and the n-electrode, the current is not uniformly distributed over the entire active layer, and the current is concentrated around the electrode, thereby forming a darker dark portion in a region far from the electrode. do. This current concentration phenomenon is particularly severe in the region between the electrode pad and the branch electrode. The current concentration phenomenon lowers the external quantum efficiency and causes problems such as local degradation and aging. On the other hand, the current concentration phenomenon is often caused by the non-uniform spacing between the p-electrode and the n-electrode. In other words, if the spacing between the electrodes is not constant, a non-uniform electric field is formed between the electrodes, whereby the current concentration phenomenon becomes conspicuous.

SUMMARY OF THE INVENTION An object of the present invention is to provide a light emitting diode having a uniform current spreading structure that blocks current concentration, increases external quantum efficiency, and prevents local degradation and aging.

A light emitting diode having a uniform current spreading structure for solving the problems of the present invention includes a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer and a transparent electrode layer positioned on the light emitting structure. The display device may further include a first electrode including a first branch electrode, a connection part, and a first electrode pad, and a first blocking layer formed on the light emitting structure.

In the diode of the present invention, the first electrode pad is disposed on the second semiconductor layer, and may be electrically connected to the first branch electrode and the connection part extending in the longitudinal direction of the first semiconductor layer. The first blocking layer may be formed between the second semiconductor layer and the first electrode pad. The first blocking layer preferably contacts the first branch electrode. The first blocking layer may have a shape that is the same as or extended to the first electrode pad and the connection part. The first blocking layer may be any one selected from an oxide film and a nitride film, or may be a multilayer film in which the oxide film and the nitride film are stacked.

In the preferred diode of the present invention, the second semiconductor layer comprises a second electrode pad, a second electrode consisting of a second branch electrode parallel to the first branch electrode, wherein the second electrode pad and the second branch The display device may further include a second blocking layer electrically insulating the electrode from the second semiconductor layer. The second blocking layer may be formed between the second semiconductor layer and the second electrode pad.

In a preferred embodiment of the present invention, it is preferable that the interval L1 between the first and second branch electrodes is constant, and the area where the interval L1 is constant is preferably 60% or more of the total area. The second blocking layer may have the same shape as or extend from the second electrode pad and the second branch electrode. The second blocking layer of the present invention may be any one selected from an oxide film and a nitride film or a multilayer film in which the oxide film and the nitride film are stacked. In addition, the second blocking layer and the transparent electrode layer formed on the second electrode pad may be spatially separated by a blocking groove exposing the second semiconductor layer.

According to the light emitting diode having the uniform current spreading structure of the present invention, by adding a structure for preventing current spreading to the first electrode pad and the second electrode pad, the current concentration phenomenon is blocked to increase the external quantum efficiency and local degradation. And aging can be prevented. The structure which prevents current spreading can prevent current from concentrating between the electrode pad and the branch electrode so that a uniform current can flow through the light emitting diode. In addition, it is possible to make the intervals between the electrodes through which the current flows uniform to prevent unwanted current concentration from occurring between the electrodes.

1 is a perspective view showing a light emitting diode having a uniform current spreading structure according to the present invention.

FIG. 2 is a cross-sectional view taken along the line II-II of FIG. 1.

3 is a cross-sectional view taken along line III-III of FIG. 1.

4 is a cross-sectional view taken along the line IV-IV of FIG. 1.

FIG. 5 is a photograph showing a light emitting image of a conventional light emitting diode without a blocking layer, and FIG. 6 is a photograph showing a light emitting image of a light emitting diode according to an embodiment of the present invention having a blocking layer.

7 is a plan view showing one modification of the light emitting diode having the uniform current spreading structure according to the present invention.

8 is a plan view showing another modification of the light emitting diode having a uniform current spreading structure according to the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments described below may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art.

An embodiment of the present invention provides a light emitting diode having a uniform current spreading structure to add a structure to prevent current diffusion to the electrode pad to block the current concentration phenomenon to increase the external quantum efficiency, and to prevent local degradation and aging. present. To this end, a light emitting diode having a structure for preventing current diffusion in an electrode pad will be described in detail, and a process of blocking current concentration will be described in detail. In addition, a process in which the distance between the electrodes through which the current flows is substantially constant by the current diffusion prevention structure according to the embodiment of the present invention will be described. Here, the current concentration phenomenon means that current is concentrated between the electrode pad and the branch electrode due to the diffusion of current in the electrode pad so that a uniform current does not flow through the entire light emitting diode.

1 is a perspective view illustrating a light emitting diode having a uniform current spreading structure according to an embodiment of the present invention. FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1, FIG. 3 is a cross-sectional view taken along line III-III of FIG. 1, and FIG. 4 is a cross-sectional view taken along line IV-IV of FIG. 1. .

1 to 4, a light emitting diode includes a substrate 10 and a light emitting structure 14, a transparent electrode layer 20, a first electrode 30, and a second electrode 40 positioned on one side of the substrate 10. ), A first blocking layer 34, and a second blocking layer 44. In this case, the first blocking layer 34 is to block current diffusion from the first electrode pad 31 of the first electrode 30, and the second blocking layer 44 is formed of the second electrode 40. This is to block current diffusion in the two-electrode pad 41. The first and

second blocking layers

34 and 44 are both disposed on the light emitting structure 14 and are positioned between the transparent electrode layers 20.

The substrate 10 includes sapphire (Al 2 O 3), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), silicon (Si), germanium (Ge), zinc oxide (ZnO), magnesium oxide (MgO), Aluminum nitride (AlN), borate nitride (BN), gallium phosphide (GaP), indium phosphide (InP), lithium-aluminum oxide (LiAl2O3) may be any one. An uneven pattern (not shown) capable of reflecting light may be formed on an upper surface, a lower surface, or both of the substrate 10. A buffer layer 12 may be disposed between the substrate 10 and the light emitting structure 14 to mitigate lattice mismatch. The buffer layer 12 may be formed as a single layer or multiple layers, for example, at least one of GaN, InN, AlN, InGaN, AlGaN, AlGaInN, and AlInN.

The light emitting structure 14 may be located on the substrate 10 or on the buffer layer 12. The light emitting structure 14 may have a plurality of conductive semiconductor layers having any one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure based on the substrate 10. The light emitting structure 14 includes a first semiconductor layer 15, an active layer 16, and a second semiconductor layer 17 sequentially stacked. For example, in the case of an np junction structure, the first semiconductor layer 15 is an n-type semiconductor layer, and the second semiconductor layer 17 refers to a p-type semiconductor layer. When a forward bias is applied to the light emitting structure 14, electrons in the conduction band of the active layer 16 and holes in the valence band transition and recombine, thereby emitting energy corresponding to the energy gap as light. At this time, the wavelength of the emitted light is determined according to the kind of material constituting the active layer 16. Electrons or holes in the active layer 16 are provided by the first semiconductor layer 15 and the second semiconductor layer 17 in accordance with the applied bias.

The first and

second semiconductor layers

15 and 17 may include different impurities to have different conductivity types. For example, the first semiconductor layer 15 may include n-type impurities and the second semiconductor layer 17 may include p-type impurities. In this case, the first semiconductor layer 15 provides electrons, and the second semiconductor layer 17 provides holes. Of course, the case where the first semiconductor layer 15 is p-type and the second semiconductor layer 17 is n-type is also possible within the scope of the present invention. The first and second semiconductor layers 15 and 17 may each include a III-V compound material such as gallium nitride.

When the light emitting structure 14 is an np junction structure, the first semiconductor layer 15 may be formed of n-type Al _x In _y Ga _z N doped with n-type impurities (0 ≦ x, y, z ≦ 1, x + y +). z = 1), n-type GaN, and the like. In this case, the n-type impurity may be at least one selected from silicon (Si), germanium (Ge), tin (Sn), selenium (Se), and tellurium (Te). The second semiconductor layer 17 may use p-type Al _x In _y Ga _z N (0 ≦ x, y, z ≤ 1, x + y + z = 1), p-type GaN, etc. doped with p-type impurities. have. The p-type impurity may be at least one selected from magnesium (Mg), zinc (Zn), calcium (Ca), strontium (Sr), beryllium (Be), and barium (Ba).

Since the active layer 16 has a lower energy band gap than the first and second semiconductor layers 15 and 17, light emission may be activated. The active layer 16 may emit light of various wavelengths and may emit infrared light, visible light, or ultraviolet light, for example. The active layer 16 may comprise a Group III-V compound material and include Al _x In _y Ga _z N (0 ≦ x, y, z ≦ 1, x + y + z = 1), InGaN or AlGaN. can do. In addition, the active layer 16 may be a single quantum well (SQW) or a multi quantum well (MQW). Furthermore, the active layer 16 may have a stacked structure of a quantum well layer and a quantum barrier layer, and the number of the quantum well layer and the quantum barrier layer may be variously changed as necessary. In addition, the active layer 16 may have, for example, a GaN / InGaN / GaN MQW structure or a GaN / AlGaN / GaN MQW structure. However, this is exemplary and the active layer 16 varies in wavelength of light emitted depending on the constituent material.

The light emitting structure 14 may have a sidewall in which a portion of the active layer 16 and the second semiconductor layer 17 are removed, and a portion of the first semiconductor layer 15 is removed and exposed accordingly. . Due to the sidewall structure, the first branch electrode 33 of the first electrode 30 according to the embodiment of the present invention extends in the longitudinal direction in a region where a portion of the first semiconductor layer 15 is exposed. Accordingly, the active layer 16 may be limited to the sidewall structure to emit light. The sidewall structure may be formed using inductively coupled plasma reactive ion etching (ICP-RIE), wet etching, or dry etching.

The transparent electrode layer 20 is made of a transparent and conductive material and is positioned on the second semiconductor layer 17. The transparent electrode layer 20 uniformly distributes the current injected from the second electrode 40 to the second semiconductor layer 17. The transparent electrode layer 20 may include a metal and may be, for example, a composite layer of nickel (Ni) and gold (Au). In addition, the transparent electrode layer 20 may include an oxide, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), aluminum zinc oxide (AZO), or indium (AZO) Aluminum Zinc Oxide (GZO), Gallium Zinc Oxide (GZO), Indium Gallium Oxide (IGO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Aluminum Tin Oxide (ATO), Indium Tungsten Oxide (IGWO), CIO (Cupper Indium Oxide), MIO (Magnesium Indium Oxide), MgO, ZnO, In2O3, TiTaO2, TiNbO2, TiOx, RuOx and IrOx may be made of at least one.

The first electrode 30 according to the embodiment of the present invention is a structure for supplying current to the first semiconductor layer 15. The first electrode 30 includes a first electrode pad 31, a connecting portion 32, and a first branch electrode 33. The first electrode pad 31 is positioned on the second semiconductor layer 17, and the first branch electrode 33 extends in the length direction in the exposed region of the first semiconductor layer 15. The first electrode pad 31 is spaced apart from the transparent electrode layer 20. The connection part 32 connects the first electrode pad 31 and the first branch electrode 33 through the sidewall structure. Accordingly, the first electrode pad 31 and the first branch electrode 33 have a step corresponding to at least the sidewall.

The first electrode pad 31 is for package bonding, and the shape of the first electrode pad 31 is not limited, but a disc shape is preferable. The connection part 32 may have a rod shape attached to a portion of the first electrode pad 31, and the first branch electrode 33 may also have a rod shape. The first electrode 30 may be manufactured by wet etching or dry etching. Meanwhile, as shown in the drawing, the connection part 32 may form the connection part 32 in the groove formed in the side wall.

The first blocking layer 34 according to the embodiment of the present invention is for preventing current diffusion in the first electrode pad 31. To this end, the first blocking layer 34 may include a region between the first electrode pad 31 and the second semiconductor layer 17 and a region between the connector 32 and the sidewalls. It is inserted into the same or slightly expanded shape as (32). The reason for forming the first blocking layer 34 in the connecting portion 32 is to prevent unnecessary current from flowing through the light emitting structure 14. Accordingly, the first blocking layer 34 of the connecting portion 32 is inevitably performed to block the current in the first electrode pad 31. The first blocking layer 34 blocks current flowing from the first electrode pad 31 from flowing through the transparent electrode layer 20 to cause current concentration. By the first blocking layer 34, the current of the drawn first electrode pad 31 is injected into the first semiconductor layer 15 only through the first branch electrode 33. Accordingly, it is possible to prevent the current concentration between the first electrode pad 31 and the second branch electrode 42 of the second electrode 40. In this case, the first blocking layer 34 may be in contact with the first branch electrode 33.

The first blocking layer 34 may be opaque or transparent, and may be an insulator such as an oxide. The first blocking layer 34 may be an oxide or nitride such as silicon oxide, silicon nitride, silicon oxynitride, or the like. In addition, the first blocking layer 34 may be a multilayer film in which the oxide or nitride is stacked. The material constituting the first blocking layer 34 presented herein is exemplary, but is not necessarily limited thereto. The first blocking layer 34 may be formed by wet etching or dry etching. The thickness of the first blocking layer 34 may be set in advance in consideration of the type of the insulator and the degree of blocking the current.

The second electrode 40 according to the embodiment of the present invention is a structure for supplying current to the second semiconductor layer 17. The second electrode 40 includes a second electrode pad 41 and a second branch electrode 42. The second electrode pad 41 is positioned on the second semiconductor layer 17, and the second branch electrode 42 extends in parallel with the first branch electrode 33 on the second semiconductor layer 17. The second electrode pad 41 is for package bonding, and the shape of the second electrode pad 41 is not limited, but a disc shape is preferable. The second branch electrode 42 preferably has a rod shape extending in parallel with the first branch electrode 33. The second electrode 40 may be formed by wet etching or dry etching.

On the other hand, the parallel first and second branch electrodes (33, 42) is an optimal form for preventing the current concentration phenomenon caused by the diffusion of the current. Since the first and

second branch electrodes

33 and 42 may be modified in various forms according to the shape and use of the light emitting diode, the first and

second branch electrodes

33 and 42 may not necessarily be parallel to each other. However, when the first and

second branch electrodes

33 and 42 are not parallel to each other, the distance between the

electrodes

33 and 42 may vary depending on the position, thereby causing a current concentration phenomenon. As shown in the embodiment of the present invention, And the

second branch electrodes

33 and 42 are parallel to each other.

The first and

second electrodes

30 and 40 may both be made of the same material, and may be implemented in one process. The first and

second electrodes

30 and 40 are, for example, gold (Au), silver (Ag), aluminum (Al), palladium (Pd), titanium (Ti), chromium (Cr), and nickel (Ni). , Tin (Sn), chromium (Cr), platinum (Pt), tungsten (W), cobalt (Co), iridium (Ir), rhodium (Rh), ruthenium (Ru), zinc (Zn), magnesium (Mg) Or alloys thereof, and may include, for example, carbon nanotubes. The second electrode 40 may be composed of a single layer or multiple layers, for example, may be composed of multiple layers such as Ti / Al, Cr / Au, Ti / Au, Au / Sn.

The second blocking layer 44 according to the exemplary embodiment of the present invention includes the second electrode pad blocking layer 45 and the second branch electrode blocking layer 46. The second electrode pad blocking layer 45 is positioned between the second electrode pad 41 and the second semiconductor layer 17, and is preferably slightly expanded compared to the second electrode pad 41. The second electrode pad blocking layer 45 prevents the second semiconductor layer 17 from being energized. In addition, a blocking groove 48 may be further provided between the second electrode pad blocking layer 45 and the transparent electrode layer 20 to form a space exposing the second semiconductor layer 17. By the blocking groove 48, the current drawn from the second electrode pad 41 can be more reliably blocked from flowing to the transparent electrode layer 20.

The second branch electrode blocking layer 46 is disposed above the second semiconductor layer 17 and below the second branch electrode 42 with the transparent electrode layer 20 interposed therebetween. The second branch electrode blocking layer 46 is preferably slightly expanded compared to the second branch electrode 42. In addition, the second branch electrode blocking layer 46 allows current not to flow to the second semiconductor layer 17 but only to the transparent electrode layer 20. In other words, by the second blocking layer 44, the electric current of the drawn second electrode pad 41 is dispersed through the second branch electrode 42 to the transparent electrode layer 20 so that the second semiconductor layer 17. ) Is injected.

The second blocking layer 44 may be opaque or transparent and may be an insulator such as an oxide. The second blocking layer 44 may be an oxide or nitride such as silicon oxide, silicon nitride, silicon oxynitride, or the like. In addition, the second blocking layer 44 may be a multilayer film in which the oxide or nitride is stacked. The material constituting the second blocking layer 44 presented herein is an example, and is not necessarily limited thereto. The second blocking layer 44 may be formed by wet etching or dry etching. The thickness of the second blocking layer 44 may be set in advance in consideration of the type of the insulator and the degree of blocking the current.

In the light emitting diode according to the embodiment of the present invention, the second branch electrode 42 has the same distance between the first and

second branch electrodes

33 and 42 by the first and second blocking layers 34 and 44. You can get the effect of setting. In the case of the first blocking layer 34, since the flow of current with the second branch electrode 42 is blocked, the distance from the first branch electrode 33 through which the current flows to the second branch electrode 42 ( L1) can be made uniform. In other words, without the first blocking layer 34, the distance (not shown) between the first electrode pad 31 and the second branch electrode 42 is smaller than the distance L1, so that the current concentration phenomenon is reduced. Can happen. However, as in the embodiment of the present invention, when the first electrode pad 31 is electrically insulated by providing the first blocking layer 34, the first electrode pad 31 and the second branch electrode 42 may be separated from each other. It can block the current concentration phenomenon of. On the other hand, it is preferable that the area where the said space | interval L1 is constant is 60% or more of the total area. If the area is less than 60%, the current applied to the entire chip is concentrated to a portion having a predetermined interval, thereby reducing the current spreading effect.

Similarly, the distance L2 between the second electrode pad 41 and the first branch electrode 33 is smaller than the distance L1 of the first branch electrode 33 and the second branch electrode 42, so that the second Without the blocking layer 44, current concentration may occur as described above. However, as in the embodiment of the present invention, when the second electrode pad 41 is electrically insulated by providing the second blocking layer 44, the second electrode pad 41 and the first branch electrode 33 may be separated from each other. It can block the current concentration phenomenon of. As described above, the first and second blocking layers 34 and 44 of the present invention may include the first and second branch electrodes (arranged in parallel with all currents introduced into the first and

second electrode pads

31 and 41, respectively). 33, 42) only. By doing so, it is possible to prevent the current concentration phenomenon occurring between the first electrode pad 31 and the second branch electrode 42 and the second electrode pad 41 and the first branch electrode 33.

5 and 6, the conventional light emitting diode has a light output PO of 100%, but the diode of the present invention has a light output PO of 101.5% and an optical output PO of 1.5%. . In addition, although the forward voltage VF of the conventional diode was 2.90V, the forward voltage VF of the diode of the present invention was 2.84V, and the forward voltage VF decreased by 0.06V. Conventional light emitting diodes show that a current concentration phenomenon occurs between the electrode pads and the branch electrodes to form a relatively dark dark portion in a region far from the electrode. On the contrary, the diode of the present invention was confirmed that relatively dark dark portions were hardly formed, and uniform dispersion of current occurred.

If a current concentration phenomenon occurs and there is no uniform current distribution, the light output PO falls and the forward voltage V _F rises as compared with the case where it does not. For this reason, conventional light emitting diodes that do not block the current concentration phenomenon have a smaller light output PO and a higher forward voltage V _F than the diode of the present invention. As described above, in the embodiment of the present invention, the first and second blocking layers 34 and 44 are disposed on the first and

second electrode pads

31 and 41, respectively, to prevent current concentration. It is possible to increase the output PO and lower the forward voltage V _F.

7 is a plan view showing one modification of the light emitting diode having the uniform current spreading structure according to the embodiment of the present invention.

According to FIG. 7, one modification of the present invention is provided between a pair of second branch electrodes 42a branched from the second electrode pad 41a on the second blocking layer 44a to both sides of the transparent electrode layer 20a. The first blocking electrode 34a and the first branch electrode 33a extending to the first electrode pad 31a are disposed at regular intervals. The second blocking layer 44a and the second electrode pad 41a are connected to the second branch electrode 42a. The transparent electrode layer 20a is positioned on the second semiconductor layer 17a. Accordingly, the second blocking layer 44a, the second electrode pad 41a, and the pair of second branch electrodes 42a form a “c” shape.

The first blocking layer 34a and the second blocking layer 44a of the modification have the same functions and roles as the first blocking layer 34 and the second blocking layer 44 described with reference to FIGS. 1 to 7. Do. That is, the first and second blocking layers 34a and 44a respectively have the first and

second branch electrodes

33a and 42a arranged in parallel with the currents introduced into the first and second electrode pads 31a and 41a, respectively. Only flow to By doing so, it is possible to prevent the current concentration phenomenon occurring between the first electrode pad 31a and the second branch electrode 42a and between the second electrode pad 41a and the first branch electrode 33a.

8 is a plan view illustrating another modified example of the light emitting diode having the uniform current spreading structure according to the embodiment of the present invention.

According to FIG. 8, another modification of the present invention includes a second blocking layer 44b, a second electrode pad 41b, a pair of second branch electrodes 42b, and a first branch electrode 33b. Although the same, the first blocking layer 34b and the first electrode pad 31b extend outside the diode. The first blocking layer 34b and the second blocking layer 44b according to another modification of the present invention may include the first blocking layer 34 and the second blocking layer 44 and their functions as described with reference to FIGS. The role is the same. That is, the first and second blocking layers 34b and 44b respectively have the first and

second branch electrodes

33b and 42b arranged in parallel to each other to draw currents introduced into the first and

second electrode pads

31b and 41b, respectively. Only flow to By doing so, it is possible to prevent the current concentration phenomenon occurring between the first electrode pad 31b and the second branch electrode 42b and between the second electrode pad 41b and the first branch electrode 33b.

As mentioned above, although the present invention has been described in detail with reference to preferred embodiments, the present invention is not limited to the above embodiments, and various modifications may be made by those skilled in the art within the scope of the technical idea of the present invention. It is possible.

(Explanation of the sign)

10; Substrate 12; Buffer layer

14; Light emitting structure 15; First semiconductor layer

16; Active layer 17; Second semiconductor layer

20; Transparent electrode layer 30; First electrode

31, 31a, 31b; First electrode pad

32; Connection

33, 33a, 33b; First branch electrode

34, 34a, 34b; First blocking layer

40; Second electrode

41, 41a, 41b; Second electrode pad

42, 42a, 42b; Second branch electrode

44, 44a, 44b; 2nd blocking layer

45; Second electrode pad blocking layer

46; Second Branch Electrode Blocking Layer

48; Blocking home

Claims

A light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer;

A transparent electrode layer on the light emitting structure;

A first electrode spaced apart from the transparent electrode layer and including a first branch electrode, a connection part, and a first electrode pad; And

A light emitting diode having a uniform current spreading structure comprising a first blocking layer formed on the light emitting structure.
2. The uniformity of claim 1, wherein the first electrode pad is disposed on the second semiconductor layer, and is electrically connected to the first branch electrode and a connection part extending in a length direction of the first semiconductor layer. Light emitting diode with one current spreading structure.
The light emitting diode of claim 1, wherein the first blocking layer is formed between the second semiconductor layer and the first electrode pad.
The light emitting diode of claim 1, wherein the first blocking layer is formed between the second semiconductor layer and the first electrode pad.
The light emitting diode of claim 1, wherein the first blocking layer has the same shape as or extends from the first electrode pad and the connection portion.
The light emitting diode of claim 1, wherein the first blocking layer is any one selected from an oxide film and a nitride film, or a multilayer film in which the oxide film and the nitride film are stacked.
The semiconductor device of claim 1, further comprising a second electrode on the second semiconductor layer, the second electrode comprising a second branch electrode parallel to the first branch electrode, wherein the second electrode pad and the second branch electrode are disposed on the second semiconductor layer. And a second blocking layer electrically insulated from the second semiconductor layer.
The light emitting diode of claim 7, wherein the second blocking layer is formed between the second semiconductor layer and the second electrode pad.
The light emitting diode having a uniform current spreading structure according to claim 7, wherein a distance L1 between the first branch electrode and the second branch electrode is constant.
10. The light emitting diode having a uniform current spreading structure according to claim 9, wherein a predetermined area of the gap L1 is 60% or more of the total area.
The light emitting diode of claim 7, wherein the second blocking layer has the same shape as or extends from the second electrode pad and the second branch electrode.
The light emitting diode of claim 7, wherein the second blocking layer has a shape that is the same as that of the second branch electrode or is extended.
8. The light emitting diode of claim 7, wherein the second blocking layer is any one selected from an oxide film and a nitride film or a multilayer film in which the oxide film and the nitride film are stacked.
The method of claim 7, wherein the second blocking layer and the transparent electrode layer formed on the second electrode pad are spatially separated by a blocking groove exposing the second semiconductor layer. Light emitting diode.