WO2015055646A2 - Herstellung eines optoelektronischen bauelements - Google Patents
Herstellung eines optoelektronischen bauelements Download PDFInfo
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- WO2015055646A2 WO2015055646A2 PCT/EP2014/072007 EP2014072007W WO2015055646A2 WO 2015055646 A2 WO2015055646 A2 WO 2015055646A2 EP 2014072007 W EP2014072007 W EP 2014072007W WO 2015055646 A2 WO2015055646 A2 WO 2015055646A2
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- Prior art keywords
- phosphor
- compression
- carrier
- molding
- semiconductor chips
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
- H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0362—Manufacture or treatment of packages of encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Definitions
- the invention relates to a method for producing an optoelectronic component.
- An optoelectronic component can be sen a rule ⁇ optoelectronic semiconductor chip for generating light radiation and at least one phosphor for radiation conversion aufwei-.
- the one or more phosphors can convert a portion of the light ⁇ radiation of the semiconductor chips in one or more other light rays. In this way, a mixed radiation can be generated whose color locus depends on the ratio of converted to unconverted radiation.
- serving as a conversion body planar layer which has the at least one phosphor disposed on the semiconductor chip.
- a plurality of opto-electronic semiconductor chips are arranged on a carrier.
- Several conversion layers which are manufactured separately from the semiconductor chips, are arranged on the semiconductor chips. Areas between the semiconductor chips and around the ⁇ se are shed with a reflective mass. Subsequently, this arrangement can be separated.
- phosphor layers are subjected to a measurement after the production to detect the conversion characteristics, and are sorted. Based on this, before being arranged on semiconductor chips, phosphor layers are selected in order to be able to produce components whose light radiation has a predetermined color location.
- Procedure is also verbun ⁇ with a high cost.
- the object of the present invention is to provide a solution for an improved production of an optoelectronic component.
- a method for producing an optoelectronic component is proposed.
- a plurality of optoelectronic semiconductor chips are arranged on a carrier.
- a common compression of separate molding compounds in the field of optoelectronic semiconductor chips is further provided. In this way, separate moldings are formed in the region of the optoelectronic semiconductor chips.
- the method separate the individual semiconductor chips associated moldings are formed directly at the site of the half ⁇ semiconductor chip. This is done by dividing each semiconductor chip provided riding ⁇ rich in loading a corresponding molding compound loading, and the molding material is compressed together ⁇ the.
- the optoelectronic semiconductor chips which may be designed to generate a light radiation, may be enveloped by the shaped bodies formed in this way. The process can be carried out with little effort.
- the present in the area of the semiconductor chip and arranged on the semiconductor chip shaped bodies can, due to the compression of the molding compositions, sharp edges at the Be ⁇ rich comprise a front. This proves to be favorable in terms of a possibly subsequently performed Verg smartlui.
- the shaped bodies formed by compressing the molding compositions may have a shape that at least partially opens or widens in the direction of a front side. Such a shape favors the production of reflectors.
- Moldings may represent an optoelectronic component or packaging. It is also possible that such Anord ⁇ voltage serves as an intermediate product, and in that thereto further process steps are carried out subsequently. For example, a singulation process is possible. In this sense, the method can be used for the joint production of a plurality of optoelectronic components, which are separated by the separation of each other. The separation can be carried out such that a thus formed opto-electronic device comprising a part of the carrier, a semi-conductor chip ⁇ and an associated mold body in the region of the semiconductor chip. It is also possible that an image formed by the separating optoelectronic component comprises egg ⁇ NEN part of the carrier and a plurality of opto-electronic semi-conductor chips and moldings.
- the molding compositions are phosphor materials.
- the shaped bodies formed by the compression of the phosphor masses can thus be phosphor bodies.
- the individual semiconductor chips associated phosphor body formed directly at the location of the semiconductor chips, instead of producing phosphor layers separately and nen arrange on optoelectronic semiconductor chips. This is done in this embodiment of the method in that provided in the region of each semiconductor chip corre sponding ⁇ luminescent mass, and the phosphor mass ⁇ are compressed together.
- the optoelectronic semiconductor chips may be enveloped by the phosphor bodies formed in this way.
- a semiconductor chip can generate a light radiation.
- Light radiation can be effected.
- a mixed radiation can be generated, which can be emitted via the phosphor body.
- the phosphor compositions and the phosphor elements formed therefrom at least one conversion material for Strahlungskonver ⁇ sion.
- the ratio of converted to unconverted radiation, and thus the color locus of a light radiation that can be generated by a semiconductor chip equipped with a phosphor body depends on how much or how far a phosphor composition forming the phosphor body is compressed. Since all the phosphor materials are pressed together, the semiconductor chips provided with the phosphor bodies can have only a small or even negligible chromaticity distribution. A complex sorting does not take place here.
- the optoelectronic semiconductor chips may be used for
- Example to light emitting diode or LED chips (Light Emitting Dio ⁇ de) act. These can be designed, for example, to generate a blue light radiation.
- the phosphor body may be configured to convert part of the blue light into one or more light radiations, for example in the green to red spectral range. In this way, for example, a white mixed radiation can be generated.
- the process can also be carried out with molding compositions which have no conversion material for radiation conversion to ⁇ . This will be discussed in more detail below. In the following, further embodiments of the method are described in which both phosphor-filled and non-phosphorus molding compounds can be used.
- the compression of the molding compositions can be carried out with the aid of a suitable tool.
- a suitable tool This may be, for example, a molding tool of a compression molding or compression molding installation.
- the tool may include two working ⁇ generating parts or tool halves which move relative to each other for the compression of molding compositions, and are thereby compressed.
- the carrier with the optoelectronic semiconductor chips can be arranged on a tool part and optionally held by the tool part. For compression, only one tool part, or both tool parts can be moved together against each other.
- the molding compositions are applied to the carrier in the region of the optoelectronic semiconductor chips before the compression ensues .
- the moldings can be manufactured with a high reliability at the location of the semiconductor chips.
- the molding compositions can be applied in such a way that the half ⁇ semiconductor chip are encased or surrounded by the molding compositions.
- the semiconductor chips may be arranged in a predetermined pattern on the carrier.
- the compression is performed using a tool part, which has a flat shape in the region of a provided for compressing the molding compounds side.
- the carrier with the half ⁇ semiconductor chip may, as indicated above, be arranged on a tool part whe- ren.
- the molding compounds can be compressed between the carrier and the tool part with the planar side.
- the molding compositions can be flachge ⁇ suppressed, and expand laterally.
- the shaped bodies formed in this way can have a flat front side and sharp leading edges.
- the tool part with the ebe ⁇ NEN side may for example be part of a suitable fla ⁇ chen tool, for example a Flachmoldtechnikmaschinemaschines a compression molding system, be.
- the molding compositions are applied to a subcarrier prior to compression.
- the molding compounds can be applied to the auxiliary carrier in a predefined grid, which corresponds to a grid of the semiconductor chips on the carrier.
- the auxiliary carrier provided with the molding compounds and the carrier provided with the semiconductor chips can be arranged on corresponding tool parts of a tool. Subsequently, the two tool parts can be moved relative to one another in order to compress the molding compounds between the auxiliary carrier and the carrier.
- the molding compositions can be be ⁇ riding observed at the place of the semiconductor chips by the semiconductor chips are introduced into the mold ⁇ extent or submerged.
- DIE se embodiment provides the possibility that the shaped body formed by compression of the molding compositions comprise a located toward a front at least partially on ⁇ widening shape.
- the auxiliary support may be on the side on which the molding compositions arranged and with which the molding compositions are together quantitative ⁇ presses, have a planar shape.
- This allows the molding compositions, comparable to the above-described Use a tool part with a flat side, flattened so that moldings are formed with a flat front and sharp leading edges.
- the compression of the molding compositions can also take place in such a way that in addition a certain shape is imparted to the moldings formed in this case. Shaping can be achieved by having a component used for compression having a side with a suitable structure.
- the subcarrier used in a ⁇ execution of the method in the field of a provided for compressing the molding materials page instead of a flat surface having a structure. Since the molding materials are placed on the subcarriers prior to compression, the molding compositions can be positioned as closely as possible in loading ⁇ train to the structure of the submount in this case.
- the structure may, for example, be cavities which are provided on the side used for compressing the molding compounds.
- the molding compositions can be arranged on the subcarrier before compression in such a way that the molding compounds are in the region or within the cavities.
- the molding compounds can be adapted to the shape of the cavities. It can be provided that the molding compounds do not completely fill the cavities but only partially.
- a structure with other structural elements can be considered in order to achieve a shaping or an adaptation of molding compounds. These include, for example, elevations or depressions. Such structural elements may further be made curved, for example. In this way moldings with curved front sides can be realized, which act for example as a lens. Possible 0
- a structure for shaping can not be provided only on an auxiliary carrier. It is also conceivable to use a tool part for compressing which has a structure in the region of a side intended for compressing the molding compounds.
- the embodiments described above may be considered analogously, i. that the structure may comprise cavities, elevations and / or depressions, for example.
- the molding compositions may be located previously in a flowable, paste-like state, for example, so that the Formmas ⁇ sen can be correspondingly deformed upon compression. After curing, the shape of the molded body is fixed.
- the molding compositions can include a radiation transmissive basic mate rial ⁇ and therein embedded particles.
- the basic material can be, for example, silicone.
- phosphor particles can be contained for radiation conversion, which makes it possible for the molding compositions to be phosphor materials as indicated above.
- the phosphor compositions can thus be in the form of a silicone-phosphor mixture.
- the phosphor particles contained in the base material may be formed of the same conversion material for radiation conversion.
- the base material may also comprise a mixture of different phosphor particles formed from different conversion materials.
- other particles may be embedded. Possible examples are scattering particles, reflective particles and pigments. It is also possible that a different particle Mi ⁇ research is corresponds hold in the base material. For example, a combination of light ⁇ material particles and scattering particles may be provided.
- a light scattering can be effected, which can be used, for example, to influence the luminous properties of an optoelectronic component. If additionally phosphor particles are present, a light mixture can be effected in this way.
- Reflective particles can ensure that a shape or
- Fluorescent body has a white body color. Another body color can be caused by the use of appropriate pigments.
- the process can be carried out with molding compositions that do not have conversion material for radiation conversion.
- molding compositions may comprise a radiation-transmissive base material, for example silicone, and scattering particles, reflective particles and / or pigments. It is also possible that the molding compositions present in a flowable state during the provision or compression have no particles but only a radiation-permeable material, for example silicone.
- a further step which can be taken in the process is a demoulding carried out after compression of the molding compositions, i. a removal of the workpiece or
- Carrier with the semiconductor chips and moldings of a tool used for compression When using a subcarrier carrier and subcarrier can be removed together, and then a detachment of the subcarrier can be done. The step of removal from the tool can be carried out after curing of the molding compositions.
- a reflective mass is applied to the carrier in such a way that the shaped bodies are surrounded on the periphery by the reflective mass. The reflective mass is in this case arranged in intermediate spaces between the moldings.
- the reflective mass it ⁇ it enables that a laterally emitted from a shaped body of light radiation is reflected in the operation of a Herge with the method ⁇ presented optoelectronic component, so that a radiation output can only take place via a front face of the relevant molding.
- the reflective mass may be, for example, silicone containing TiO 2 particles.
- a molded body of an opto-electronic device may have a shape widening at least partially in the direction of the front side.
- the reflective mass or sidewalls of the reflective mass, which adjoin the shaped body can act as a reflector for directing light radiation in the direction of the front side.
- the method thus makes it possible to form inte ⁇ grated reflectors.
- a separate generation of reflectors, for example by means of a molding process, can therefore be dispensed with.
- the reflective compound can be arranged, for example, by casting on the carrier and subsequently cured. These steps can be performed after a removal or removal of the carrier from a tool used for compression.
- the moldings may have sharp edges vordersei- term so that the shedding of the reflective material can be carried out reliably without wetting the front side For ⁇ th of the moldings.
- the reflective compound can be introduced into cavities which Zvi ⁇ rule vorlie- the carrier, the molded bodies and a tool part used for compressing or an auxiliary carrier and then cured.
- Such pre ⁇ hens example which may involve transfer molding or transfer molding also enables application of reflective mass without a front wetting of molded bodies. Subsequently, the provided with the reflective mass carrier can be removed from the tool.
- the support may be singulated as indicated above.
- the molding compositions are compressed up to a predetermined material thickness. This makes it possible to define the luminous properties of an optoelectronic component exactly. This can be considered, for example, when using phosphor materials. By compressing the phosphor masses up to a predetermined material thickness, it is possible, the color location or the color space coordinates of a
- a distance control may be used.
- tool parts of a tool used for compression can be moved relative to each other until reaching a predetermined distance. Compression to a defined material thickness is also possible through the use of spacers which provide a stop when compressed. Such spacers may be present on the carrier, a tool part and / or an auxiliary carrier, if used. In one embodiment of a tool part or subcarrier with a structure, structural elements of the structure can serve as spacers.
- At least one optoelectronic operated Ronic semiconductor chip, and detected by the associated molding compound light radiation is detected.
- the luminous properties of an opto ⁇ electronic device can be specified exactly. This may also come at a use of fluorescent masses Be ⁇ costume to set a color location. It is exploited from ⁇ that even the uncured phosphor materials can cause a radiation conversion.
- the compression leads to a shift in the ratio of converted to unconverted radiation, and thus to a color locus shift.
- the compression of the phosphor masses can be carried out until the measured light radiation has a color location which corresponds to a predetermined color location. In this way, all with luminescent material bodies equipped semiconductor chip of the substrate can emit light ⁇ radiation, which may have given an average of color space coordinates.
- a higher accuracy can be achieved if, instead of a semiconductor chip, several or all semiconductor chips of the carrier are operated and the light radiation emitted by the associated molding or phosphor masses is detected.
- parts of a tool used for compression as well as of a subcarrier which may be used may be designed to be at least radiopaque .
- a compression of phosphor masses up to a predetermined material thickness and detection of a light radiation also makes it possible for there to be only a small color location scattering with respect to the producible light radiations between a plurality of carriers processed according to the method.
- FIGS. 1 to 5 show a method in which molding compounds are applied to a carrier with semiconductor chips and compressed by means of a tool part for forming shaped bodies, and subsequently a reflective mass is formed on the carrier;
- Figures 6 to 10 a further method, in which the Formmas ⁇ sen be arranged, in contrast to the method of Figures 1 to 5 prior to compression on an auxiliary carrier;
- Figures 11 to 14 a development of the method of Figures 6 to 10, in which a subcarrier is used with curved recesses;
- Figures 15 to 18, a development of the method of Figu ⁇ ren 6 to 10, in which a subcarrier is used with cavities;
- FIGS. 19 to 22 show a development of the method of FIGS. 6 to 10, in which an auxiliary carrier with cavities and curved depressions is used;
- FIG. 23 shows a formation of a reflective mass before demoulding.
- a plurality of shaped bodies 125 for optoelectronic semiconductor chips 110 are formed directly at the location of the semiconductor chips 110. This is done by using 110 provided separate molding compositions 120 are interconnected together in the region of the semiconductor chips ⁇ quantitative suppressed.
- phosphor-filled molding compounds 120 are used, which are also referred to below as phosphor materials 120.
- the process sequence can be described as a combined dosing and molding process.
- a low production cost as well as the ability to specify the color location of the light rays generated by the components exactly, with only a slight color scattering is present.
- FIGS. 1 to 5 show, in a schematic side view, process steps which can be carried out in a method for producing optoelectronic components.
- a plurality of optoelectronic semiconductor chips 110 are mounted on a flat surface. gene carrier 100 arranged.
- the semiconductor chips 110 are designed to emit light radiation.
- FIG. 1 shows three semiconductor chips 110 which are arranged side by side on the carrier 100. It is possible vorzu a large ⁇ ßere number of semiconductor chips 110 on the carrier 100 ⁇ see. Figure 1 and the other figures can illustrate the carrier 100 in this sense only partially.
- the semiconductor chips 110 may be positio ned ⁇ in the form of a predetermined grid of rows and columns on the support 100th
- Arranging the semiconductor chips 110 on the carrier 100 may include both mechanical fastening and electrical connection of the semiconductor chips 110. Electrical connection can, as indicated in FIG. 1, take place with the aid of bonding wires 115.
- Each semiconductor chip 110 may have a front-side contact and a back-side contact (not shown).
- a front side contact of a semiconductor chip 110 can be connected in a wire bonding process through a bonding wire 115 to a not shown mating contact of Trä ⁇ gers 100th Can vary over a back side contact of a semiconductor chip 110, an electrical and mechanical ⁇ specific compound of the chip 110, for example using a brazing material or an electrically conductive adhesive ⁇ substance, are produced to a further, not shown, counter-contact of the wearer 100th All of the semiconductor chips 110 may be connected to contacts of the carrier 100 in this manner.
- the carrier 100 can be realized in different configurations.
- an embodiment as a printed circuit board, ceramic carrier or preform carrier may be considered.
- the optoelectronic semiconductor chips 110 can in particular be light-emitting diode chips.
- the semiconductor chips ⁇ 110 may be prepared in conventional manner and communication components such as a semiconductor layer sequence with an active region for generating radiation having.
- the semiconductor chips 110 can also be surface emitters, in which a substantial part of the generated light radiation can be emitted via the front side directed upwards in FIG.
- separate phosphor compounds 120 are applied to the carrier 100 in the region of the semiconductor chips 110.
- the phosphor compounds 120 are in a flowable or pasty state.
- the application of the phosphor compounds 120 is carried out in such a way that the semiconductor chips 110 are enveloped by the phosphor compounds 120.
- Each semiconductor chip 110 is provided with its own phosphor mass 120.
- the bonding wires 115 may be completeness, ⁇ dig surrounded by the fluorescent masses 120th
- the application of the phosphor masses 120 can take place by means of a suitable metering process. For example, dispensing with the help of a needle dispenser is possible.
- the phosphor compositions 120 may have a spherical or hump form.
- the phosphor compounds 120 have a flowable and radiation-permeable base or matrix material 121 and particles 122 embedded therein.
- the base material 121 may be, for example, silicone.
- the contained in the base material 121 ⁇ NEN particles 122 may be phosphor particles 122, a conversion of light radiation of the semiconductor chip 110 can be effected with de ⁇ ren aid.
- the phosphor particles 122 have a suitable conversion material for this purpose. It is possible that all the phosphor particles are formed from the same ⁇ conversion material 122nd It is also possible that in the base material 121 a mixture of different phosphor particles 122, which differ from lent conversion materials are formed, is included.
- the a ⁇ bedded in the base material particles 121 122 more particles, for example stray ⁇ particles comprising.
- phosphor bodies 125 are formed in the region of the optoelectronic semiconductor chips 110, which are likewise present separately from one another.
- a phosphor body 125 serves to effect a radiation conversion of the light radiation generated by an associated semiconductor chip 110.
- the light radiation emitted by a semiconductor chip 110 on the front side can be distributed by scattering and reflection within the phosphor composition 120 or the phosphor body 125 formed therefrom.
- a mixed radiation may be generated, which can be discharged via the fluorescent body 125th
- the semiconductor chips generate 110 ei ⁇ ne blue light radiation which measurements in the phosphor 120 and the fluorescent bodies 125 formed therefrom is converted in part in one or more light radiations in the green to red spectral region.
- a white mixed radiation can be generated.
- the color locus of the light radiation radiated by a phosphor body 125 is dependent on the ratio of converted to unconverted radiation, which in turn depends inter alia on the thickness of the relevant phosphor body 125.
- the compression of the phosphor masses 120 is carried out with the aid of a suitable tool.
- the tool has two tool parts which move relative to each other for compressing the phosphor masses 120 and thereby be compressed. For compressing a tool part can be moved, or both tool parts can be moved together towards each other.
- the tool may, for example, be comprised by a compression molding machine.
- the tool part 140 which has a planar shape in the region of an opening provided for compressing the phosphor materials 120 side, may be part of a game to the examples of the Flachmoldtechnikmaschine Wegs ge above ⁇ called compression molding system.
- the carrier 100 is placed on the other, not shown, tool part prior to compression.
- the carrier 100 may men affect ⁇ for together, as shown in Figure 3, be placed in a lodged in comparison to Figure 2 upside down state.
- the droplet-shaped phosphor masses 120 may remain in this position on the carrier 100.
- the phosphor masses 120 are flattened between the tool part 140 with the planar flat pressure side and the carrier 100.
- the phosphor compounds 120 simultaneously expand laterally.
- 120 phosphor ⁇ body 125 are formed with flat front sides and sharp leading edges of the phosphor masses .
- the front sides are the downwardly directed sides of the phosphor bodies 125.
- Each semiconductor chip 110 is enveloped by its own phosphor body 125.
- the bonding wires 115 may be completely surrounded by the phosphor bodies 125.
- the color point of the light emitted by a phosphor element 125 light radiation during operation directs the corresponding semiconductor chip 110 125. Since the Leuchtstoffmas- sen 120 are compressed together by the Mate ⁇ rialdicke of the phosphor element, all of the phosphor element 125 thus formed may have substantially the have the same shape and the same thickness. In this way, all the phosphor bodies 125 can emit a light beam. Relieve ment with substantially the same color locus, and can therefore be based on the emanating from the phosphor body 125 of the carrier 100 light radiation only a slight color scattering.
- the compression can furthermore take place in such a way that all light radiations which can be emitted by the phosphor bodies 125 during operation of the semiconductor chips 110 have on average a predefined color location or predetermined color space coordinates (CIE color space). Different approaches are conceivable for this purpose.
- a certain degree of color locus control can be achieved by compressing the phosphor masses 120 to a predetermined material thickness.
- a distance control can be considered.
- the tool parts of the tool used for compression can be moved so far until the tool parts or opposing pressure surfaces of the tool parts have a predetermined distance.
- spacers which can form a mechanical stop when the phosphor compounds 120 are compressed.
- Such spacers may be provided, for example, on the carrier 100 or on the tool part 140 (not shown).
- Another possibility, which may be implemented as an alternative or in addition to the distance control, is an in-line color location measurement performed during the compression.
- the semiconductor chips can be 110 ⁇ be exaggerated, and the radiation emitted by the phosphor materials 120 light radiation can be detected.
- a displacement is the ratio of environment converted to unconverted radiation, and thus a color locus instead.
- the compression is based on this basis carried out until the measured light radiation has a color location, wel more like a given color location. Performing such a measurement requires the use of a device for energizing the carrier 100 or the semiconductor chips 110 and a measuring device for detecting the light radiation (not shown).
- the measuring device can be arranged outside the tool used for compression. In order for the light radiation to be able to pass through the tool and reach the measuring device, components of the tool such as the tool part 140 may be designed to be permeable to radiation at least in some areas.
- each semiconductor chip 110 is surrounded by its own cured phosphor body 125.
- the phosphor bodies 125 have flat front sides and sharp edges present at the edge of the front side. Between the phosphor bodies 125 are intermediate spaces.
- an operation of a semiconductor chip 110 means that a light radiation is also released not only on a front face of the associated light ⁇ material body 125, but to the side of the phosphor ⁇ body 125th Depending on the application, it may be desirable for a light emission to take place only via the front side.
- ge ⁇ shows in Figure 5 a reflective mass
- the reflective mass 130 can cause a light radiation emitted laterally by the phosphor bodies 125 to be reflected, and therefore only a radiation output can be done over the front sides of the phosphor body 125.
- the reflective mass 130 may include, for example, silicone with TiO 2 particles contained therein.
- the reflective mass 130 is applied in a flowable state on the carrier 100 and then cured. The application can be done by casting the spaces between the phosphor bodies 125. Since the phosphor body 125 have sharp leading edges, the casting on reliable
- multi-chip components which have a part of the carrier 100, a plurality of semiconductor chips 110 and a plurality of phosphor bodies 125 surrounded by the reflective mass 130.
- phosphor bodies 125 are formed in a comparable manner by compressing phosphor compounds 120 in the region of semiconductor chips 110. It is noted that matching
- FIGS. 6 to 10 show process steps which can be carried out in a further method for producing optoelectronic components.
- a plurality of optoelectronic semiconductor chips 110 are arranged on the carrier substrate 100.
- Differing from the method of Figures 1 to 5 are spherical or bump-type light ⁇ masses of material 120 prior to its compression, as shown in Figure 7, applied to a subcarrier 141st
- the auxiliary carrier 141 may comprise, for example, Teflon.
- the auxiliary carrier 141 has at the side, on which is arranged and the phosphor masses 120 with which the phosphor ⁇ masses 120 are compressed below, a planar shape.
- the phosphor compounds 120 are metered onto the auxiliary carrier 141 in a predefined grid, which corresponds to a grid of the semiconductor chips 110 on the carrier 100.
- the application of the phosphor materials 120 can be performed using a suitable process, such as dispensing, screen printing or stencil printing ⁇ .
- the compression of the phosphor masses 120 to form phosphor bodies 125 is performed by means of a tool, not shown.
- the tool which can be encompassed by a compression molding system, has two tool parts. For together ⁇ men pass the provided with the semiconductor chip 110 and the carrier 100 provided with the phosphor materials 120 sub-carriers 141 are disposed on the tool parts of the tool. Subsequently, the tool parts and thereby the carrier 100 and the subcarrier 141 are moved relative to each other. This has immersing the semiconductor chips 110 in the unge ⁇ hardened phosphor masses 120 and a flattening of the
- the carrier 100 may also be in an upside down condition as shown in FIG.
- the phosphor compositions 120 can be compressed in this process by a distance control up to a predetermined material thickness. When using spacers, these can also be arranged on the auxiliary carrier 141 (not shown). Alternatively or additionally, a color location measurement can be carried out.
- the auxiliary carrier 141 may be at least partially radiation- permeable ⁇ formed.
- the phosphor bodies 125 have flat front sides and sharp leading edges.
- a reflective mass 130 can be applied to the carrier 100 in spaces between the phosphor bodies 125, so that the phosphor bodies 125 are surrounded on the periphery by the reflective mass 130. This can be done by casting. Here, the sharp leading edges of the phosphor bodies 125 can prevent front side wetting. After the reflective potting compound 130 has cured, a separation process can also be carried out.
- Subcarrier 141 makes it possible for phosphor bodies 125 to be formed thereby, which have a shape that widen at least partially in the direction of the front side (see FIG. As a result, the subsequently formed reflective mass 130 or can be sidewalls of the reflective Mass 130, which peripherally adjacent to the phosphor body 125, serve as reflectors for directing light radiation in the direction of the front sides of the phosphor body 125. If appropriate, this may also apply with respect to the phosphor body 125 produced according to the method of FIGS. 1 to 5.
- the fluorescent materials 120 can not only flattened ⁇ the order in this way as described above to form the phosphor element 125 with planar front surfaces and sharp edges. It is also possible to give the phosphor compounds 120 at least partially a predetermined shape. This can be accomplished by having a component used for compression having a patterned or textured side. This can be considered in particular for a subcarrier.
- the phosphor masses 120 before compression as precisely as possible with respect to the shaping
- FIGS. 11 to 14 show a further process sequence which can be used in the production of optoelectronic components.
- phosphor compositions 120 are disposed on an auxiliary carrier 142 before being compressed.
- the auxiliary carrier 142 has at the side, on which is arranged and the phosphor masses 120 with which the fluorescent materials 120 are compressed nachfol ⁇ quietly, structural elements in the form of arcuate recesses 151 on.
- the recesses 151 may besit zen ⁇ in the plan, for example, a circular contour. At these points, the phosphor compounds 120 are positioned.
- the recesses 151 and, as a result, the phosphor compositions 120 applied here are arranged in a grid which corresponds to a grid of the semiconductor chips 110 on the carrier 100.
- the carrier 100 provided with the semiconductor chips and the auxiliary carrier 142 provided with the phosphor compounds 120 are subsequently arranged on tool parts of a tool, not shown, and compressed with the aid of the tool, as shown in FIG. This has immersing the semiconductor chips 110 in the phosphor masses 120 and a Kom ⁇ compress- the phosphor materials 120 result.
- the compression can again take place up to a predetermined material thickness. Alternatively or additionally, a color location measurement can be carried out.
- the phosphor element 125 formed by the compression of the phosphor materials 120 have, on a result of the structure of the auxiliary carrier 142 with the recesses 151, attached thereto ⁇ equalized front surfaces which are outwardly curved or convex. Due to this shape, the phosphor bodies 125 can act as lenses in the manufactured devices.
- FIGS. 15 to 18 show a further process sequence which can be used in the production of optoelectronic components.
- phosphor masses 120 are compressed before being compressed a subcarrier 143 applied.
- the auxiliary carrier 143 has in the region of the side on which the fluorescent materials are arranged 120 and which is used for the following summary ⁇ press, an intended for shaping struc- ture in the form of cavities 152.
- the cavities 152 are by web-like elevations, which form side walls of the Kavitä ⁇ th 152, limited.
- the cavities 152 are planar at the bottom. For example, in the plan view, cavities 152 may have a circular contour.
- the fluorescent materials 120 are applied in such a way upon the submount 143 that the fluorescent materials 120 Wenig ⁇ least partly located in the cavities 152nd
- the phosphor compositions 120 may in this case also protrude in part from the cavities 152, as indicated in FIG.
- the cavities 152 and, as a result, the phosphor compositions 120 applied to the auxiliary carrier 143 are arranged in a grid which corresponds to a grid of the semiconductor chips 110 on the carrier 100.
- the carrier 100 provided with the semiconductor chips and the auxiliary carrier 143 provided with the phosphor compounds 120 are subsequently arranged on tool parts of a tool, not shown, and compressed with the aid of the tool, as shown in FIG. 16.
- This is connected to a Einbrin ⁇ gene of the semiconductor chips 110 in the phosphor materials 120 and cavities 152, and with a compression of the phosphor materials 120.
- This process can be carried out until the carrier 100 and the cavities 152 bounding protrusions, as also shown in Figure 16, touch.
- the elevations can thus serve as a spacer for providing a mechanical stop, whereby the phosphor materials can be sammengelix to a predetermined thickness of material to ⁇ 120th
- a color location measurement can be carried out.
- the phosphor compositions 120 are also adapted to the shape of the cavities 152 of the auxiliary carrier 143.
- the luminescent bodies 125 which do not completely fill the cavities 152 may have a widening geometry in a region adjacent to the carrier 100, whereby reflectors may be formed at this point. Below are further steps such as curing the
- Phosphor bodies 125 are applied.
- the sharp leading edges of the phosphor bodies 125 can prevent front side wetting. After curing of the reflective mass 130, a singulation can take place.
- Figures 19 to 22 show a further process sequence in which, as shown in Figure 19, phosphor compositions 120 are applied to a submount 144 prior to compression.
- the auxiliary carrier 144 has te on which the fluorescent materials are arranged 120 and which is used for compressing the region of the sides, a structural ⁇ structure in the form of cavities 153.
- the cavities 153 are defined by web-like elevations, which form side walls of the Kavitä ⁇ th 153.
- the cavities 153 have recesses 151 curved on the bottom.
- the structure of subcarrier 144 may be considered as a combination of the structures of subcarriers 142, 143 described above.
- the cavities 153 and recesses 151 may be in the supervision of Example have a circular contour.
- the phosphor ⁇ masses 120 are so applied to the submount 144, the phosphor materials are located in the region of the cavities 120 153rd
- the cavities 153 and consequently the phosphor masses 120 are arranged in a grid which
- Grid of the semiconductor chips 110 on the carrier 100 corresponds.
- the carrier 100 and the auxiliary carrier 144 are subsequently disposed on tool parts of a tool, not shown, and with the aid of the tool, as shown in Figure 20, to ⁇ sammengeplain.
- This is associated with an introduction of the semiconductor chips 110 into the phosphor masses 120 and cavities 153, and with a compression of the phosphor masses 120.
- the elevations of the auxiliary carrier 144 surrounding the cavities 153 can serve as spacers.
- Gegebe ⁇ appropriate, a color locus can be carried out additionally or alternatively.
- the phosphor bodies 125 formed by the compression of the phosphor compounds 120 do not completely fill the cavities 153 again.
- the phosphor bodies 125 have front surfaces Oberflä ⁇ given by the recesses 151, which are curved outwardly. There are also sharp leading edges.
- Adjacent to the front side, the phosphor bodies 125 have an edge region predetermined by the cavities 153. In the case of cavities 153 with a circular contour in plan view, the edge region can be in the form of a circular cylindrical peripheral surface. Subsequently, a curing of the phosphor body 125 and a demolding take place, whereby the carrier 100 can be provided in the state shown in Figure 21. Subsequently, as shown in FIG.
- a reflective mass 130 for example by casting, can be applied to the carrier 100 in intermediate spaces between the phosphor bodies 125.
- the sharp leading edges of the phosphor bodies 125 can prevent front side wetting.
- a singulation can take place.
- the formation of a reflective mass 130 occurs after demoulding. Deviating from this, the formation of the reflective mass 130 can also be carried out before the demoulding, as illustrated in FIG. 23.
- the phosphor compositions are 120 Zvi ⁇ rule the carrier 100 and the tool part 140 together quantitative ⁇ expresses as WUR explained above with reference to Figure 3 ⁇ de, the reflective material is inserted 130 in this case for a completely cure 125 th of the fluorescent body formed thereby in cavities between the carrier 100, the
- Phosphor bodies 125 and the tool part 140 are present. Such an approach, which may be a transfer molding process, also allows the reflective mass 130 to be applied without front side wetting of the phosphor bodies 125. Subsequently, the reflective mass 130 may be cured, and may be coated with the reflective mass 130 provided carrier 100 are removed from the tool and separated.
- the re ⁇ flektive material is introduced into cavities 130 after curing the thus gebil- Deten phosphor element 125, which are present between the carrier 100, the phosphor bodies 125 and the auxiliary carrier 141. Subsequently, steps such as curing of the reflective mass 130, removal of the carrier 100 together with the subcarrier 141 from the tool, detachment of the subcarrier 141, and a singulation can take place.
- a comparable procedure can also be considered when using the structured auxiliary carrier 142 (see FIG.
- the embodiments explained with reference to the figures represent preferred or exemplary embodiments of the invention.
- the particles 122 contained in the base material 121 include additional particles in addition to phosphor particles. These may include, in addition to the above-mentioned scattering particles, for example, reflective particles and pigments. It is possible that different particles are contained in the base material 121 ⁇ 122nd Scattering particles can Leuch ⁇ properties of an optoelectronic component affect influence, and for example, a light mixing in a Form g. Allow phosphor body 125. By means of reflective particles, a body or phosphor body 125 can be given a white body color. With the help of inorganic pigments, a different body color can be produced.
- molding compositions 120 which have no phosphor ⁇ particles.
- Such phosphor-free molding compounds 120 may also have a radiation-transmissive base material 121, for example silicone.
- base material particles 121 122 for example, scattering particles, reflectors ⁇ tive particles and / or pigments may be embedded or not.
- Such embodiments may, for example, come into consideration in order, after the formation of shaped bodies 125, to use their shape for producing reflectors with the aid of a reflective mass 130.
- semiconductor chips can be used which have two front side contacts . Such semiconductor chips can be glued be mounted on a support 100. The front side contacts can be connected by means of bonding wires 115 to mating contacts of the carrier 100. It is also possible to use semiconductor chips with two rear-side contacts. About the backside contacts such semiconductor chips, for example, using a solder or conductive adhesive, mechanically and electrically connected to mating contacts of a carrier 100. In a further variant, semiconductor chips designed as volume emitters can be used.
- auxiliary carrier with cavities may be used, the cavities starting from a bottom region having an at least partially widening geometry.
- mold or phosphor body 125 can be formed with a predetermined shape which widens at least partially in the direction of the front side.
- nonuniform structures i. that various structural elements are provided on a subcarrier.
- molding compounds 120 shaped or phosphor bodies 125 having different shapes can be produced on a carrier 100.
- molding compounds 120 prior to compression, so that, similar to the use of a subcarrier in the context of compression dipping of semiconductor chips 110 can be carried out in the molding compositions 120.
- formation of a reflective mass 130 can be dispensed with.
- a singulation of the carrier 100 in single or Mehrchipbau ⁇ elements are carried out after demolding.
Landscapes
- Led Device Packages (AREA)
- Casting Or Compression Moulding Of Plastics Or The Like (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
Claims
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE112014004745.7T DE112014004745A5 (de) | 2013-10-15 | 2014-10-14 | Herstellung eines optoelektronischen Bauelements |
| CN201480056817.9A CN105612624A (zh) | 2013-10-15 | 2014-10-14 | 光电组件的生产 |
| US15/025,759 US20160233200A1 (en) | 2013-10-15 | 2014-10-15 | Production of an Optoelectronic Component |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102013220790.5 | 2013-10-15 | ||
| DE102013220790.5A DE102013220790A1 (de) | 2013-10-15 | 2013-10-15 | Herstellung eines optoelektronischen Bauelements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2015055646A2 true WO2015055646A2 (de) | 2015-04-23 |
| WO2015055646A3 WO2015055646A3 (de) | 2016-01-21 |
Family
ID=51844677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2014/072007 Ceased WO2015055646A2 (de) | 2013-10-15 | 2014-10-14 | Herstellung eines optoelektronischen bauelements |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20160233200A1 (de) |
| CN (1) | CN105612624A (de) |
| DE (2) | DE102013220790A1 (de) |
| WO (1) | WO2015055646A2 (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018162075A1 (en) * | 2017-03-10 | 2018-09-13 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component |
| DE102017117150A1 (de) | 2017-07-28 | 2019-01-31 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil |
| DE102019118543B4 (de) * | 2019-07-09 | 2023-02-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Anordnung von elektronischen halbleiterbauelementen und verfahren zum betrieb einer anordnung von elektronischen halbleiterbauelementen |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050020259A1 (en) * | 2001-12-18 | 2005-01-27 | Herrero Juan Antonio Sanchez | Method for migrating subscriber data between different home servers of a telecommunications network |
| JP2005259847A (ja) * | 2004-03-10 | 2005-09-22 | Nitto Denko Corp | 光半導体装置の製造方法 |
| JP4001608B2 (ja) * | 2005-06-27 | 2007-10-31 | 日本テキサス・インスツルメンツ株式会社 | 半導体装置および半導体装置の製造方法 |
| JP3964438B2 (ja) * | 2005-06-27 | 2007-08-22 | 日本テキサス・インスツルメンツ株式会社 | 半導体装置および半導体装置の製造方法 |
| US7520052B2 (en) * | 2005-06-27 | 2009-04-21 | Texas Instruments Incorporated | Method of manufacturing a semiconductor device |
| KR100703217B1 (ko) * | 2006-02-22 | 2007-04-09 | 삼성전기주식회사 | 발광다이오드 패키지 제조방법 |
| DE102009058006B4 (de) * | 2009-12-11 | 2022-03-31 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil |
| US8148210B1 (en) * | 2010-09-13 | 2012-04-03 | Infineon Technologies Ag | Method for fabricating a semiconductor chip panel |
| CN102683542B (zh) * | 2011-03-15 | 2014-12-10 | 展晶科技(深圳)有限公司 | Led封装结构 |
| CN202049995U (zh) * | 2011-04-19 | 2011-11-23 | 鹤山丽得电子实业有限公司 | 一种贴片发光二极管支架及采用该支架的贴片发光二极管 |
| JP6003016B2 (ja) * | 2011-07-15 | 2016-10-05 | ソニー株式会社 | 還元処理装置、還元処理方法および還元システム |
| JP2013038187A (ja) * | 2011-08-05 | 2013-02-21 | Stanley Electric Co Ltd | 発光装置およびその製造方法 |
| DE102011111917A1 (de) * | 2011-08-30 | 2013-02-28 | Osram Opto Semiconductors Gmbh | Licht emittierendes Halbleiterbauelement und Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements |
| CN103187485A (zh) * | 2011-12-27 | 2013-07-03 | 展晶科技(深圳)有限公司 | 发光二极管的制造方法 |
-
2013
- 2013-10-15 DE DE102013220790.5A patent/DE102013220790A1/de not_active Withdrawn
-
2014
- 2014-10-14 DE DE112014004745.7T patent/DE112014004745A5/de not_active Withdrawn
- 2014-10-14 CN CN201480056817.9A patent/CN105612624A/zh active Pending
- 2014-10-14 WO PCT/EP2014/072007 patent/WO2015055646A2/de not_active Ceased
- 2014-10-15 US US15/025,759 patent/US20160233200A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CN105612624A (zh) | 2016-05-25 |
| WO2015055646A3 (de) | 2016-01-21 |
| US20160233200A1 (en) | 2016-08-11 |
| DE112014004745A5 (de) | 2016-10-27 |
| DE102013220790A1 (de) | 2015-04-16 |
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