WO2015047017A1 - Method for manufacturing cover substrate - Google Patents

Method for manufacturing cover substrate Download PDF

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Publication number
WO2015047017A1
WO2015047017A1 PCT/KR2014/009175 KR2014009175W WO2015047017A1 WO 2015047017 A1 WO2015047017 A1 WO 2015047017A1 KR 2014009175 W KR2014009175 W KR 2014009175W WO 2015047017 A1 WO2015047017 A1 WO 2015047017A1
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Prior art keywords
substrate
sio
coating
coating film
cover substrate
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PCT/KR2014/009175
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French (fr)
Korean (ko)
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임진성
박태효
신동근
안진수
이은호
허진녕
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코닝정밀소재 주식회사
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Publication of WO2015047017A1 publication Critical patent/WO2015047017A1/en

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Definitions

  • the present invention relates to a cover substrate manufacturing method, and more particularly to a cover substrate manufacturing method used in the touch screen panel.
  • Glass products are treated as essential components in a wide range of technologies and industries, such as monitors, cameras, VTRs, mobile phones, video and optical equipment, automobiles, transportation equipment, various tableware, and construction facilities. According to the present invention, glass having various physical properties is manufactured and used.
  • the cover glass for display is rapidly growing with the spread of the capacitive touch panel.
  • the cover glass Since the cover glass is in contact with a user's finger or stylus, the surface should be high in strength, smooth in touch, and have excellent stain resistance against dust, sweat and fingerprints.
  • a manufacturing method of manufacturing a cover glass-integrated touch panel using chemically strengthened glass which is widely used as a cover glass of a touch panel, may be largely divided into a sheet method and a cell method.
  • the sheet method is a method of manufacturing a touch panel by reinforcing a large original glass and then implementing a plurality of touch panels on the original glass, cutting and processing the same, and the cell method after cutting and processing a large glass substrate according to a product size.
  • the edge portion of the cover glass is also strengthened to have excellent strength, but the touch panel must be implemented on the cover glass of the cell unit. It has the disadvantage of low productivity.
  • the sheet method has a high productivity of the touch panel manufacturing due to the method of implementing a plurality of touch panels in the large original glass, but has a disadvantage in that it is difficult to cut and process the reinforced original glass.
  • the cutting surface (pristine surface) that is not strengthened by the cutting of the cover glass is exposed, and furthermore, since fine cracks are formed on the cutting surface during the cutting process, the mechanical properties of the cover glass are deteriorated. Occurs.
  • an object of the present invention is to provide a method for manufacturing a cover substrate that can improve the strength of the edge portion.
  • the present invention is a dip coating step of coating SiO 2 on the substrate by a dip-coating method; And it provides a cover substrate manufacturing method comprising a heat treatment step of heat-treating the SiO 2 coating film at a temperature of 200 °C or more.
  • the heat treatment step may heat the SiO 2 coating film at a temperature of 200 ⁇ 250 °C.
  • the heat treatment step may proceed for more than 3 hours the SiO 2 coating film.
  • the thickness of the SiO 2 coating layer coated on the upper and lower surfaces of the substrate in the dip coating step is preferably 80 ⁇ 110nm.
  • cover substrate manufacturing method may further include a bezel part forming step of forming a bezel part that partitions an effective screen area along the bottom edge of the substrate before the dip coating step.
  • the method may further include an electrode forming step of forming a touch electrode on a lower surface of the substrate on which the bezel part is formed after the bevel portion forming step and before the dip coating step.
  • cover substrate manufacturing method may further include an antifouling coating film forming step of coating an antifouling material on the SiO 2 coating film formed on the substrate after the heat treatment step.
  • the antifouling material may be a fluorine compound in which fluorine (F) is bonded to a carbon (C) chain, and the fluorine compound may have an alcohol or a silane (silane) functional group.
  • the substrate may be a chemically strengthened glass substrate.
  • the antireflection property of the cover substrate and the strength of the cover substrate edge portion can be improved.
  • the wear resistance of the antifouling coating film can be improved.
  • FIG. 1 is a schematic flowchart of a method for manufacturing a cover substrate according to an embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view of a cover substrate manufactured according to an embodiment of the present invention.
  • FIG. 1 is a schematic flowchart of a method of manufacturing a cover substrate according to an embodiment of the present invention.
  • the cover substrate manufacturing method according to an embodiment of the present invention is dip coating (dip-coating) a dip coating step of coating the SiO 2 on the substrate by a method (S100) and the SiO 2 coating It may include a heat treatment step (S200) for heat-treating the substrate to a temperature of 200 °C or more.
  • SiO 2 is coated on a substrate by a dip coating method (S100).
  • glass or polyethylene terephthalate (PET) film may be used, but it is preferable to use glass having excellent transmittance, long-term durability, and touch. More preferably, chemically strengthened glass which improves the strength of the glass through chemical treatment of replacing sodium (Na) ions with potassium (K) ions in a soda-lime-based glass may be used.
  • the SiO 2 coating film may be formed by a dip coating method in which the substrate is immersed in a container containing the SiO 2 solution. In this way, by forming a SiO 2 coating on a substrate by a dip coating method, it is possible to form the SiO 2 coating layer on the entire surface of the substrate.
  • the thickness of the SiO 2 coating layer coated on the upper and lower surfaces of the substrate by dip coating may be 80 to 110 nm.
  • the substrate coated with SiO 2 is heat-treated at a temperature of 200 ° C. or more (S200).
  • the heat treatment may be performed by charging a substrate on which a SiO 2 coating film is formed on an surface of an oven or a furnace, and then heating the substrate.
  • the SiO 2 coating film coated on the surface of the substrate performs a function of improving antireflection characteristics and edge strength.
  • the SiO 2 coating layer formed on the upper and lower surfaces of the substrate and having a lower refractive index of 1.46 to 1.48 than the substrate improves the antireflection property of the cover substrate by the interference effect of light through the difference in refractive index with the substrate.
  • the SiO 2 coating film coated on the substrate edge portion improves the strength of the substrate edge portion.
  • the substrate 100 is a substrate manufactured by cutting chemically strengthened original glass
  • fine cracks 110 generated during the cutting process are present on the cut surface.
  • this micro-cracks 110 as a buried by SiO 2, mewojin SiO 2 fine Since the fine crack 110 is healed in response to the crack 110, the strength of the cover substrate edge portion is improved.
  • the heat treatment is performed by heating the SiO 2 coating film to a temperature of 200 °C or more.
  • the substrate edge portion has a strength of 700 MPa or less, but when the heat treatment is performed at 200 ° C. or more, the strength of the substrate edge portion may be improved to 800 MPa or more.
  • the heat treatment step (S200) will heat-treat the SiO 2 coating film at a temperature of 200 ⁇ 250 °C.
  • the bezel part when the bezel part is formed on the lower surface of the substrate, when the SiO 2 coating film is heated to a temperature higher than 250 ° C., the bezel part may deteriorate and the properties or color of the bezel part may change.
  • the heat treatment step (S200) is preferably performed for 3 hours or more. If the heat treatment time is less than 3 hours because the density (density) are improved strength of the low SiO 2 SiO 2 coating effect of the coating film it can be limited.
  • the cover substrate manufacturing method may further include a bezel portion forming step of forming a bezel portion for partitioning the effective screen area along the bottom edge of the substrate before the dip coating step (S100).
  • the bezel prevents wires such as electrode lines and power lines for touch detection from being visible, increases contrast of the effective screen by contrasting with the effective screen inside, and enhances visual quality by giving a solid aesthetic. do.
  • Such a bezel portion may be formed by coating a dye material such as black, blue, red, or the like along a lower surface of the substrate by various methods such as printing, lithography, and inkjet.
  • the cover substrate manufacturing method may further include an electrode forming step for detecting a touch position on a lower surface of the substrate on which the bezel part is formed after the bezel part forming step and before the dip coating step (S100). .
  • the electrode forming step may be performed by coating a transparent conductive film on a lower surface of the substrate on which the bezel part is formed by sputtering deposition, or the like, and then patterning the transparent conductive film to form an electrode performing an x-axis and y-axis electrode function.
  • the transparent conductive film is coated on the lower surface of the substrate on which the bezel part is formed and then patterned to form the x-axis electrode.
  • the insulating film is coated on the x-axis electrode, and the transparent conductive film is coated on the insulating film and then patterned to form the y-axis electrode. It may be made of a forming process.
  • the transparent conductive film may be formed of indium tin oxide, indium zinc oxide, copper oxide, tin oxide, zinc oxide, and titanium oxide. It may be made of a transparent conductive material such as metal oxide or carbon nano tube (CNT).
  • the insulating film for preventing an electrical short circuit between the x-axis electrode and the y-axis electrode may be formed of a metal oxide such as silicon oxide, a polymer, an acrylic resin, or the like.
  • a dip coating step S100 may be performed after a masking process of masking a portion to be connected to the FPCB.
  • cover substrate manufacturing method may further include an antifouling coating film forming step of coating an antifouling material on the SiO 2 coating film formed on the upper surface of the substrate after the heat treatment step (S200).
  • the antifouling coating film makes it difficult to attach contaminants such as fingerprints to the cover substrate and can be easily removed even if it is attached.
  • the antifouling material may be made of a fluorine compound in which fluorine (F) is bonded to a carbon (C) chain.
  • a fluorine compound in which fluorine (F) is bonded to a carbon (C) chain.
  • it may be made of a fluorine compound containing an alcohol or a silane (silane) functional group to increase the surface binding force.
  • Coating of the antifouling material may be performed by various methods such as E-beam coating, spray coating, and wet coating.
  • the antifouling coating film thus formed has excellent durability.
  • the antifouling coating film since the antifouling coating film has a stronger adhesion with the thin film formed by the dip coating than the thin film formed by the sputtering deposition method, the antifouling coating film is formed on the SiO 2 coating film formed by the dip coating according to an embodiment of the present invention. By doing so, the wear resistance and visibility of the antifouling coating film can be improved.
  • Table 1 shows a cover substrate (Example 1) in which an antifouling coating film was formed on a SiO 2 coating film formed on an upper surface of a glass substrate by forming a SiO 2 coating film on a glass substrate by dip coating, and an antifouling coating film on a glass substrate. It is a table comparing the optical characteristics and wear resistance of one cover substrate (Comparative Example 1). Here, the eraser 6000 times rub the antifouling coating film with an eraser 6000 times and then measured the contact angle of the surface of the antifouling coating film, steel wool (2000 times) after rubbing the antifouling coating film 2000 times using steel wool surface of the antifouling coating film The contact angle is measured.
  • Example 1 Comparative Example 1 Optical properties reflectivity(%) 8.2 5.4 Transmittance (%) 91.9 94.8 Wear resistance Eraser (6000 times) ⁇ 19.6 ° (119.2 ° ⁇ 99.6 °) ⁇ 13.8 ° (119.5 ° ⁇ 105.7 °) Steel wool (2000 times) ⁇ 51.5 ° (119.1 ° ⁇ 67.6 °) ⁇ 18.7 ° (119.5 ° ⁇ 100.8 °)
  • the cover substrate of Example 1 has a better reflection characteristic and higher transmittance than the cover substrate of Comparative Example 1 by the SiO 2 coating film.
  • the cover substrate of Example 1 was smaller than the cover substrate of Comparative Example 1 in the case of the change of the surface contact angle of the antifouling coating film by the eraser and the steel wool test, the wear resistance of the antifouling coating film formed on the cover substrate of Example 1 was compared. It can be seen that the wear resistance is superior to the antifouling coating film formed on the cover substrate of (1).

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

The present invention relates to a method for manufacturing a cover substrate, and more particularly, to a method for manufacturing a cover substrate used for a touchscreen panel. To this end, the present invention provides a method for manufacturing a cover substrate, comprising the steps of: a dip-coating step for coating SiO2 on a substrate by a dip-coating method; and a heat treatment step for heat-treating an SiO2 coating film at a temperature equal to or greater than 200℃.

Description

커버 기판 제조방법Cover substrate manufacturing method
본 발명은 커버 기판 제조방법에 관한 것으로서, 더욱 상세하게는 터치스크린패널에 사용되는 커버 기판 제조방법에 관한 것이다.The present invention relates to a cover substrate manufacturing method, and more particularly to a cover substrate manufacturing method used in the touch screen panel.
모니터, 카메라, VTR, 휴대폰 등 영상 및 광학장비, 자동차 등 운송장비, 각종 식기류, 건축시설 등 폭넓은 기술 및 산업분야에 있어서 유리제품은 필수 구성요소로 다루어지고 있으며, 이에 따라 각 산업분야의 특성에 맞추어 다양한 물성을 갖는 유리가 제조되어 사용되고 있다.Glass products are treated as essential components in a wide range of technologies and industries, such as monitors, cameras, VTRs, mobile phones, video and optical equipment, automobiles, transportation equipment, various tableware, and construction facilities. According to the present invention, glass having various physical properties is manufactured and used.
특히, 최근 들어 디스플레이용 커버 유리는 정전용량 터치패널의 보급과 더불어 급성장하고 있다.In particular, in recent years, the cover glass for display is rapidly growing with the spread of the capacitive touch panel.
이와 같은 커버 유리는 사용자의 손가락 또는 스타일러스(stylus) 등에 의해 접촉하게 되므로 강도가 높고, 표면이 매끄러워 촉감이 좋아야 하며, 먼지, 땀, 지문에 대한 내오염 특성이 우수해야 한다.Since the cover glass is in contact with a user's finger or stylus, the surface should be high in strength, smooth in touch, and have excellent stain resistance against dust, sweat and fingerprints.
한편, 터치 패널의 커버 유리로 많이 사용되고 있는 화학 강화 유리를 이용하여 커버 유리 일체형 터치 패널을 제조하는 제조방법은 크게 시트(sheet) 방식과 셀(cell) 방식으로 나눌 수 있다.Meanwhile, a manufacturing method of manufacturing a cover glass-integrated touch panel using chemically strengthened glass, which is widely used as a cover glass of a touch panel, may be largely divided into a sheet method and a cell method.
시트 방식은 대형 원판 유리를 강화한 후 원판 유리 상에 다수의 터치 패널을 구현하고 이를 절단 및 가공하여 터치 패널을 제조하는 방법이고, 셀 방식은 대형 유리 기판을 제품 크기에 맞게 절단 및 가공한 후 이를 강화하고 강화된 각각의 커버 유리를 이용하여 터치 패널을 제조하는 방법이다.The sheet method is a method of manufacturing a touch panel by reinforcing a large original glass and then implementing a plurality of touch panels on the original glass, cutting and processing the same, and the cell method after cutting and processing a large glass substrate according to a product size. A method of manufacturing a touch panel using each of the strengthened and strengthened cover glass.
셀 방식은 셀 단위로 강화된 커버 유리 상에 터치 센서를 구현하므로, 커버 유리의 에지(edge) 부분도 강화되어 우수한 강도를 가지나, 셀 단위 커버 유리 상에 각각 터치 패널를 구현해야 하므로 터치 패널 제조의 생산성이 낮다는 단점을 갖는다.Since the cell type implements the touch sensor on the cover glass reinforced by the cell unit, the edge portion of the cover glass is also strengthened to have excellent strength, but the touch panel must be implemented on the cover glass of the cell unit. It has the disadvantage of low productivity.
반면, 시트 방식은 대형 원판 유리에 다수의 터치 패널을 구현하는 방법에 의하므로 터치 패널 제조의 생산성이 높으나, 강화된 원판 유리를 절단 및 가공하기가 어렵다는 단점을 갖는다. On the other hand, the sheet method has a high productivity of the touch panel manufacturing due to the method of implementing a plurality of touch panels in the large original glass, but has a disadvantage in that it is difficult to cut and process the reinforced original glass.
또한, 시트 방식에 의하는 경우, 커버 유리의 절단에 의해 강화되지 않은 절단면(pristine surface)이 노출되게 되며, 더욱이 절단 과정에서 절단면에 미세 크랙이 형성되게 되므로 커버 유리의 기계적 특성이 저하되게 된다는 문제가 발생한다.In addition, in the case of the sheet method, the cutting surface (pristine surface) that is not strengthened by the cutting of the cover glass is exposed, and furthermore, since fine cracks are formed on the cutting surface during the cutting process, the mechanical properties of the cover glass are deteriorated. Occurs.
(선행기술문헌)(Prior art document)
대한민국등록특허 제10-1144264호(2012.05.02)Korea Patent Registration No. 10-1144264 (2012.05.02)
본 발명은 상술한 바와 같은 종래기술의 문제점을 해결하기 위해 안출된 것으로서, 본 발명의 목적은 에지부의 강도를 향상시킬 수 있는 커버 기판 제조방법을 제공하는 것이다.The present invention has been made to solve the problems of the prior art as described above, an object of the present invention is to provide a method for manufacturing a cover substrate that can improve the strength of the edge portion.
이를 위해, 본 발명은 딥 코팅(dip-coating) 법에 의해 기판에 SiO2를 코팅하는 딥 코팅 단계; 및 SiO2 코팅막을 200℃ 이상의 온도로 열처리하는 열처리 단계를 포함하는 것을 특징으로 하는 커버 기판 제조방법을 제공한다.To this end, the present invention is a dip coating step of coating SiO 2 on the substrate by a dip-coating method; And it provides a cover substrate manufacturing method comprising a heat treatment step of heat-treating the SiO 2 coating film at a temperature of 200 ℃ or more.
바람직하게, 상기 열처리 단계는 상기 SiO2 코팅막을 200 ~ 250℃의 온도로 열처리할 수 있다.Preferably, the heat treatment step may heat the SiO 2 coating film at a temperature of 200 ~ 250 ℃.
또한, 상기 열처리 단계는 상기 SiO2 코팅막을 3 시간 이상 진행될 수 있다.In addition, the heat treatment step may proceed for more than 3 hours the SiO 2 coating film.
그리고, 상기 딥 코팅 단계에서 상기 기판의 상면 및 하면에 코팅되는 SiO2 코팅막의 두께는 80 ~ 110㎚인 것이 바람직하다.In addition, the thickness of the SiO 2 coating layer coated on the upper and lower surfaces of the substrate in the dip coating step is preferably 80 ~ 110nm.
또한, 상기 커버 기판 제조방법은 상기 딥 코팅 단계 전, 상기 기판의 하면 가장자리를 따라 유효 화면 영역을 구획하는 베젤부를 형성하는 베젤부 형성 단계를 더 포함할 수 있다.In addition, the cover substrate manufacturing method may further include a bezel part forming step of forming a bezel part that partitions an effective screen area along the bottom edge of the substrate before the dip coating step.
그리고, 상기 베절부 형성 단계 후, 딥 코팅 단계 전 상기 베젤부가 형성된 기판의 하면에 터치 전극을 형성하는 전극 형성 단계를 더 포함할 수 있다.The method may further include an electrode forming step of forming a touch electrode on a lower surface of the substrate on which the bezel part is formed after the bevel portion forming step and before the dip coating step.
또한, 상기 커버 기판 제조방법은 상기 열처리 단계 후 상기 기판 상면에 형성된 SiO2 코팅막 상에 방오성 물질을 코팅하는 방오 코팅막 형성 단계를 더 포함할 수 있다.In addition, the cover substrate manufacturing method may further include an antifouling coating film forming step of coating an antifouling material on the SiO 2 coating film formed on the substrate after the heat treatment step.
여기서, 상기 방오성 물질은 탄소(C) 사슬에 불소(F)가 결합된 불소화합물일 수 있으며, 상기 불소화합물은 알코올 또는 실란(silane) 작용기를 가질 수 있다.Here, the antifouling material may be a fluorine compound in which fluorine (F) is bonded to a carbon (C) chain, and the fluorine compound may have an alcohol or a silane (silane) functional group.
또한, 상기 기판은 화학 강화된 유리 기판일 수 있다.In addition, the substrate may be a chemically strengthened glass substrate.
본 발명에 따르면, 커버 기판의 반사 방지 특성 및 커버 기판 에지부의 강도를 향상시킬 수 있다.According to the present invention, the antireflection property of the cover substrate and the strength of the cover substrate edge portion can be improved.
또한, 본 발명에 따르면, 방오 코팅막의 내마모성을 향상시킬 수 있다.In addition, according to the present invention, the wear resistance of the antifouling coating film can be improved.
도 1은 본 발명의 일 실시예에 따른 커버 기판 제조방법의 개략적인 흐름도.1 is a schematic flowchart of a method for manufacturing a cover substrate according to an embodiment of the present invention.
도 2는 본 발명의 일 실시예에 따라 제조된 커버 기판의 개략적인 단면도.2 is a schematic cross-sectional view of a cover substrate manufactured according to an embodiment of the present invention.
이하에서는 첨부된 도면들을 참조하여 본 발명의 실시 예에 따른 커버 기판 제조방법에 대해 상세히 설명한다.Hereinafter, a method of manufacturing a cover substrate according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings.
아울러, 본 발명을 설명함에 있어서, 관련된 공지 기능 혹은 구성에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단된 경우 그 상세한 설명은 생략한다.In addition, in describing the present invention, when it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

도 1은 본 발명의 일 실시예에 따른 커버 기판 제조방법의 개략적인 흐름도이다.1 is a schematic flowchart of a method of manufacturing a cover substrate according to an embodiment of the present invention.
도 1에 도시된 바와 같이, 본 발명의 일 실시예에 따른 커버 기판 제조방법은 딥 코팅(dip-coating) 법에 의해 기판에 SiO2를 코팅하는 딥 코팅 단계(S100) 및 SiO2가 코팅된 기판을 200℃ 이상의 온도로 열처리하는 열처리 단계(S200)를 포함하여 이루어질 수 있다.1, the cover substrate manufacturing method according to an embodiment of the present invention is dip coating (dip-coating) a dip coating step of coating the SiO 2 on the substrate by a method (S100) and the SiO 2 coating It may include a heat treatment step (S200) for heat-treating the substrate to a temperature of 200 ℃ or more.
본 발명의 일 실시예에 따라 커버 기판을 제조하기 위해 우선, 딥 코팅 법에 의해 기판에 SiO2를 코팅한다(S100).In order to manufacture a cover substrate according to an embodiment of the present invention, first, SiO 2 is coated on a substrate by a dip coating method (S100).
기판은 유리 또는 PET(Polyethylenen Terephthalate) 필름이 사용될 수 있으나, 투과도, 장기 내구성, 터치감 등이 우수한 유리를 사용하는 것이 바람직하다. 보다 바람직하게는 소다 석회(soda-lime) 계통의 유리에서 나트륨(Na) 이온을 칼륨(K) 이온으로 치환하는 화학 처리를 통해 유리의 강도를 향상시킨 화학강화 유리가 사용될 수 있다. As the substrate, glass or polyethylene terephthalate (PET) film may be used, but it is preferable to use glass having excellent transmittance, long-term durability, and touch. More preferably, chemically strengthened glass which improves the strength of the glass through chemical treatment of replacing sodium (Na) ions with potassium (K) ions in a soda-lime-based glass may be used.
SiO2 코팅막은 SiO2 용액이 담기 용기에 기판을 침지시키는 딥 코팅법에 의해 형성될 수 있다. 이와 같이, 딥 코팅법에 의해 기판에 SiO2 코팅막을 형성시킴으로써, 기판의 전 표면에 SiO2 코팅막을 형성할 수 있다.The SiO 2 coating film may be formed by a dip coating method in which the substrate is immersed in a container containing the SiO 2 solution. In this way, by forming a SiO 2 coating on a substrate by a dip coating method, it is possible to form the SiO 2 coating layer on the entire surface of the substrate.
바람직하게, 딥 코팅에 의해 기판의 상면 및 하면에 코팅되는 SiO2 코팅막의 두께는 80 ~ 110㎚일 것이다.Preferably, the thickness of the SiO 2 coating layer coated on the upper and lower surfaces of the substrate by dip coating may be 80 to 110 nm.

이후, SiO2가 코팅된 기판을 200℃ 이상의 온도로 열처리한다(S200).Thereafter, the substrate coated with SiO 2 is heat-treated at a temperature of 200 ° C. or more (S200).
열처리는 표면에 SiO2 코팅막이 형성된 기판을 오븐(oven) 또는 노(furnace)에 장입한 후 가열함으로써 이루어질 수 있다.The heat treatment may be performed by charging a substrate on which a SiO 2 coating film is formed on an surface of an oven or a furnace, and then heating the substrate.
이와 같이, 기판의 표면에 코팅된 SiO2 코팅막은 반사방지 특성 및 에지부의 강도를 향상시키는 기능을 수행한다.As such, the SiO 2 coating film coated on the surface of the substrate performs a function of improving antireflection characteristics and edge strength.
즉, 기판의 상면 및 하면에 형성되어 기판보다 낮은 1.46 ~ 1.48의 굴절률을 갖는 SiO2 코팅막은 기판과의 굴절률 차를 통한 광의 간섭효과에 의해 커버 기판의 반사방지 특성을 향상시킨다. That is, the SiO 2 coating layer formed on the upper and lower surfaces of the substrate and having a lower refractive index of 1.46 to 1.48 than the substrate improves the antireflection property of the cover substrate by the interference effect of light through the difference in refractive index with the substrate.
또한, 기판 에지부에 코팅된 SiO2 코팅막은 기판 에지부의 강도를 향상시킨다. 도 2에 도시된 바와 같이 본 발명의 일 실시예에서 기판(100)이 화학강화된 원판 유리를 절단하여 제조된 기판인 경우, 절단면에는 절단 과정 중 발생한 미세 크랙(110)이 존재하게 된다. 그러나, 본 발명의 경우 SiO2 코팅막(200)을 형성하기 위한 딥 코팅 단계(S100)와 열처리 단계(S200)를 통해 이와 같은 미세 크랙(110)이 SiO2에 의해 메워지고, 메워진 SiO2가 미세 크랙(110)과 반응하여 미세 크랙(110)을 치유(healing)되게 되므로, 커버 기판 에지부의 강도가 향상된다. 이에, 열처리는 SiO2 코팅막을 200℃ 이상의 온도로 가열하며 이루어진다. 열처리 온도가 200℃ 미만인 경우 커버 기판 에지부에서 충분한 강도 향상 효과를 얻을 수 없기 때문이다. 일례로, 열처리 온도가 200℃ 미만인 경우 기판 에지부는 700㎫ 이하의 강도를 가지나, 200℃ 이상으로 열처리하는 경우 기판 에지부의 강도를 800㎫ 이상으로 향상시킬 수 있다.In addition, the SiO 2 coating film coated on the substrate edge portion improves the strength of the substrate edge portion. As illustrated in FIG. 2, when the substrate 100 is a substrate manufactured by cutting chemically strengthened original glass, fine cracks 110 generated during the cutting process are present on the cut surface. However, in the case of the present invention is via a dip-coating step (S100) and the heat treatment step (S200) for forming the SiO 2 coating film 200, this micro-cracks 110 as a buried by SiO 2, mewojin SiO 2 fine Since the fine crack 110 is healed in response to the crack 110, the strength of the cover substrate edge portion is improved. Thus, the heat treatment is performed by heating the SiO 2 coating film to a temperature of 200 ℃ or more. This is because a sufficient strength improving effect cannot be obtained at the edge portion of the cover substrate when the heat treatment temperature is less than 200 ° C. For example, when the heat treatment temperature is less than 200 ° C., the substrate edge portion has a strength of 700 MPa or less, but when the heat treatment is performed at 200 ° C. or more, the strength of the substrate edge portion may be improved to 800 MPa or more.
바람직하게, 열처리 단계(S200)는 SiO2 코팅막을 200 ~ 250℃의 온도로 열처리 할 것이다.Preferably, the heat treatment step (S200) will heat-treat the SiO 2 coating film at a temperature of 200 ~ 250 ℃.
후술할 바와 같이, 기판의 하면에 베젤부가 형성되는 경우 SiO2 코팅막을 250℃ 보다 높은 온도로 가열하면, 베젤부가 열화되어 베젤부의 물성이나 색상이 변할 수 있기 때문이다.As will be described later, when the bezel part is formed on the lower surface of the substrate, when the SiO 2 coating film is heated to a temperature higher than 250 ° C., the bezel part may deteriorate and the properties or color of the bezel part may change.
또한, 열처리 단계(S200)는 3 시간 이상 진행되는 것이 바람직하다. 열처리 시간이 3 시간보다 적은 경우 SiO2 코팅막의 밀도(density)가 낮아 SiO2 코팅막의 강도 향상 효과가 크지 않을 수 있기 때문이다.In addition, the heat treatment step (S200) is preferably performed for 3 hours or more. If the heat treatment time is less than 3 hours because the density (density) are improved strength of the low SiO 2 SiO 2 coating effect of the coating film it can be limited.

한편, 본 발명의 일 실시예에 따른 커버 기판 제조방법은 딥 코팅 단계(S100) 전 기판의 하면 가장자리를 따라 유효 화면 영역을 구획하는 베젤부를 형성하는 베젤부 형성 단계를 더 포함할 수 있다.On the other hand, the cover substrate manufacturing method according to an embodiment of the present invention may further include a bezel portion forming step of forming a bezel portion for partitioning the effective screen area along the bottom edge of the substrate before the dip coating step (S100).
베젤부는 터치 검출을 위한 전극선 이나 전원선 등의 배선이 가시화되는 것을 방지하고, 그 내측의 유효 화면과의 대비를 통해 유효 화면의 콘트라스트를 높이고, 중후한 미감을 주어 시각적 품위를 높여주는 기능을 수행한다. The bezel prevents wires such as electrode lines and power lines for touch detection from being visible, increases contrast of the effective screen by contrasting with the effective screen inside, and enhances visual quality by giving a solid aesthetic. do.
이와 같은 베젤부는 기판의 하면 가장자리를 따라 블랙, 블루, 레드 등의 색소 물질을 인쇄, 리소그래피, 잉크젯 등 다양한 방법으로 코팅함으로써 형성할 수 있다.Such a bezel portion may be formed by coating a dye material such as black, blue, red, or the like along a lower surface of the substrate by various methods such as printing, lithography, and inkjet.

또한, 본 발명의 일 실시예에 따른 커버 기판 제조방법은 베젤부 형성 단계 후, 딥 코팅 단계 전(S100), 베젤부가 형성된 기판의 하면에 터치 위치 검출을 위한 전극 형성 단계를 더 포함할 수 있다.In addition, the cover substrate manufacturing method according to an embodiment of the present invention may further include an electrode forming step for detecting a touch position on a lower surface of the substrate on which the bezel part is formed after the bezel part forming step and before the dip coating step (S100). .
전극 형성 단계는 베젤부가 형성된 기판의 하면에 투명 도전막을 스퍼터링 증착법 등에 의해 코팅한 후 이 투명 도전막을 패터닝하여 x축 및 y축 전극 기능을 수행하는 전극을 형성하는 공정으로 이루어질 수 있다. 또는, 베젤부가 형성된 기판의 하면에 투명 도전막을 코팅한 후 패터닝하여 x축 전극을 형성하고, 이후 x축 전극 상에 절연막을 코팅하고, 절연막 상에 투명 도전막을 코팅한 후 패터닝하여 y축 전극을 형성하는 공정으로 이루어질 수 있다. 여기서, 투명 도전막은 인듐 주석 산화물(indium tin oxide), 인듐 아연 산화물(indium zinc oxide), 구리 산화물(copper oxide), 주석 산화물(tin oxide), 아연 산화물(zinc oxide), 티타늄 산화물 (titanium oxide) 등의 금속 산화물이나 탄소 나노 튜브(carbon nano tube, CNT) 등과 같은 투명 전도성 물질로 이루어질 수 있다. 그리고, x축 전극과 y축 전극의 전기적 단락이 일어나는 것을 방지하기 위한 절연막은 실리콘 산화물과 같은 금속 산화물, 폴리머 및 아크릴계 수지 등으로 이루어질 수 있다.The electrode forming step may be performed by coating a transparent conductive film on a lower surface of the substrate on which the bezel part is formed by sputtering deposition, or the like, and then patterning the transparent conductive film to form an electrode performing an x-axis and y-axis electrode function. Alternatively, the transparent conductive film is coated on the lower surface of the substrate on which the bezel part is formed and then patterned to form the x-axis electrode. Then, the insulating film is coated on the x-axis electrode, and the transparent conductive film is coated on the insulating film and then patterned to form the y-axis electrode. It may be made of a forming process. The transparent conductive film may be formed of indium tin oxide, indium zinc oxide, copper oxide, tin oxide, zinc oxide, and titanium oxide. It may be made of a transparent conductive material such as metal oxide or carbon nano tube (CNT). The insulating film for preventing an electrical short circuit between the x-axis electrode and the y-axis electrode may be formed of a metal oxide such as silicon oxide, a polymer, an acrylic resin, or the like.
한편, 이와 같은 전극 형성 후에는 추후 FPCB와 연결될 부분을 마스킹(masking)하는 마스킹 공정을 거친 후 딥 코팅 단계(S100)를 진행해야 할 것이다.Meanwhile, after the formation of such an electrode, a dip coating step S100 may be performed after a masking process of masking a portion to be connected to the FPCB.

또한, 본 발명의 일 실시예에 따른 커버 기판 제조방법은 열처리 단계(S200) 후 기판 상면에 형성된 SiO2 코팅막 상에 방오성 물질을 코팅하는 방오 코팅막 형성 단계를 더 포함할 수 있다.In addition, the cover substrate manufacturing method according to an embodiment of the present invention may further include an antifouling coating film forming step of coating an antifouling material on the SiO 2 coating film formed on the upper surface of the substrate after the heat treatment step (S200).
방오 코팅막은 커버 기판에 지문 등의 오염물이 부착되기 어렵게 하고, 부착되더라도 쉽게 제거될 수 있도록 한다. The antifouling coating film makes it difficult to attach contaminants such as fingerprints to the cover substrate and can be easily removed even if it is attached.
여기서, 방오성 물질은 탄소(C) 사슬에 불소(F)가 결합된 불소화합물로 이루어질 수 있다. 바람직하게는 표면 결합력을 높이기 위해 알코올 또는 실란(silane) 작용기를 포함하는 불소화합물로 이루어질 수 있다.Here, the antifouling material may be made of a fluorine compound in which fluorine (F) is bonded to a carbon (C) chain. Preferably it may be made of a fluorine compound containing an alcohol or a silane (silane) functional group to increase the surface binding force.
방오성 물질의 코팅은 E-beam 코팅, 스프레이(spray) 코팅, 습식(wet) 코팅 등 다양한 방법에 의해 이루어질 수 있다.Coating of the antifouling material may be performed by various methods such as E-beam coating, spray coating, and wet coating.
한편, 이와 같이 형성된 방오 코팅막은 우수한 내구성을 갖는다. 일반적으로 방오 코팅막은 스퍼터링(sputtering) 증착법에 의해 형성된 박막보다 딥 코팅에 의해 형성된 박막과의 부착력이 강하므로, 본 발명의 일 실시예에 따라 딥 코팅에 의해 형성된 SiO2 코팅막 상에 방오 코팅막은 형성함으로써, 방오 코팅막의 내마모성 및 시인성을 향상시킬 수 있다.On the other hand, the antifouling coating film thus formed has excellent durability. In general, since the antifouling coating film has a stronger adhesion with the thin film formed by the dip coating than the thin film formed by the sputtering deposition method, the antifouling coating film is formed on the SiO 2 coating film formed by the dip coating according to an embodiment of the present invention. By doing so, the wear resistance and visibility of the antifouling coating film can be improved.
[표 1]은 딥 코팅에 의해 유리 기판에 SiO2 코팅막을 형성한 후 유리 기판 상면에 형성된 SiO2 코팅막 상에 방오 코팅막을 형성한 커버 기판(실시예 1)과 유리 기판 상에 방오 코팅막을 형성한 커버 기판(비교예 1)의 광학 특성 및 내마모성을 비교한 표이다. 여기서, 지우개 6000회는 방오 코팅막을 지우개로 6000회 문지른 후 방오 코팅막의 표면 접촉각을 측정한 것이고, 스틸 울(steel wool) 2000회는 스틸 울을 이용하여 방오 코팅막을 2000회 문지른 후 방오 코팅막의 표면 접촉각을 측정한 것 이다.Table 1 shows a cover substrate (Example 1) in which an antifouling coating film was formed on a SiO 2 coating film formed on an upper surface of a glass substrate by forming a SiO 2 coating film on a glass substrate by dip coating, and an antifouling coating film on a glass substrate. It is a table comparing the optical characteristics and wear resistance of one cover substrate (Comparative Example 1). Here, the eraser 6000 times rub the antifouling coating film with an eraser 6000 times and then measured the contact angle of the surface of the antifouling coating film, steel wool (2000 times) after rubbing the antifouling coating film 2000 times using steel wool surface of the antifouling coating film The contact angle is measured.
실시예 1Example 1 비교예 1Comparative Example 1
광학 특성Optical properties 반사율(%)reflectivity(%) 8.28.2 5.45.4
투과율(%)Transmittance (%) 91.991.9 94.894.8
내마모성Wear resistance 지우개
(6000회)Eraser
(6000 times) 		Δ19.6°
(119.2° →99.6°)Δ19.6 °
(119.2 ° → 99.6 °) 		Δ13.8°
(119.5° →105.7°)Δ13.8 °
(119.5 ° → 105.7 °)
스틸 울
(2000회)Steel wool
(2000 times) 		Δ51.5°
(119.1° →67.6°)Δ51.5 °
(119.1 ° → 67.6 °) 		Δ18.7°
(119.5° →100.8°)Δ18.7 °
(119.5 ° → 100.8 °)
[표 1]에 나타나 바와 같이, SiO2 코팅막에 의해 실시예 1의 커버 기판이 비교예 1의 커버 기판보다 우수한 반사 특성 및 높은 투과율을 가짐을 알 수 있다. 또한, 지우개 및 스틸 울 테스트에 의한 방오 코팅막의 표면 접촉각 변화량의 경우, 실시예 1의 커버 기판이 비교예 1의 커버 기판보다 작으므로, 실시예 1의 커버 기판에 형성된 방오 코팅막의 내마모성이 비교예 1의 커버 기판에 형성된 방오 코팅막보다 내마모성이 우수함을 알 수 있다.As shown in Table 1, it can be seen that the cover substrate of Example 1 has a better reflection characteristic and higher transmittance than the cover substrate of Comparative Example 1 by the SiO 2 coating film. In addition, since the cover substrate of Example 1 was smaller than the cover substrate of Comparative Example 1 in the case of the change of the surface contact angle of the antifouling coating film by the eraser and the steel wool test, the wear resistance of the antifouling coating film formed on the cover substrate of Example 1 was compared. It can be seen that the wear resistance is superior to the antifouling coating film formed on the cover substrate of (1).

이상과 같이 본 발명은 비록 한정된 실시 예와 도면에 의해 설명되었으나, 본 발명은 상기의 실시 예에 한정되는 것은 아니며, 본 발명이 속하는 분야에서 통상의 지식을 가진 자라면 이러한 기재로부터 다양한 수정 및 변형이 가능하다.As described above, although the present invention has been described with reference to the limited embodiments and the drawings, the present invention is not limited to the above embodiments, and those skilled in the art to which the present invention pertains various modifications and variations from such descriptions. This is possible.
그러므로 본 발명의 범위는 설명된 실시 예에 국한되어 정해져서는 아니 되며, 후술하는 특허청구범위뿐만 아니라 특허청구범위와 균등한 것들에 의해 정해져야 한다.Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined not only by the claims below but also by the equivalents of the claims.

Claims (10)

  1. 딥 코팅(dip-coating) 법에 의해 기판에 SiO2를 코팅하는 딥 코팅 단계; 및
    SiO2 코팅막을 200℃ 이상의 온도로 열처리하는 열처리 단계를 포함하는 것을 특징으로 하는 커버 기판 제조방법.    A dip coating step of coating SiO 2 on the substrate by a dip-coating method; And
    A cover substrate manufacturing method comprising the heat treatment step of heat-treating the SiO 2 coating film to a temperature of 200 ℃ or more.
  2. 제1항에 있어서,
    상기 열처리 단계는 상기 SiO2 코팅막을 200 ~ 250℃의 온도로 열처리 하는 것을 특징으로 하는 커버 기판 제조방법.    The method of claim 1,
    The heat treatment step is a cover substrate manufacturing method characterized in that the heat treatment of the SiO 2 coating film at a temperature of 200 ~ 250 ℃.
  3. 제1항에 있어서,
    상기 열처리 단계는 상기 SiO2 코팅막을 3 시간 이상 진행되는 것을 특징으로 하는 커버 기판 제조방법.    The method of claim 1,
    The heat treatment step is a cover substrate manufacturing method, characterized in that for more than 3 hours the SiO 2 coating film.
  4. 제1항에 있어서,
    상기 딥 코팅 단계에서 상기 기판의 상면 및 하면에 코팅되는 SiO2 코팅막의 두께는 80 ~ 110㎚인 것을 특징으로 하는 커버 기판 제조방법.    The method of claim 1,
    The thickness of the SiO 2 coating layer coated on the upper and lower surfaces of the substrate in the dip coating step is 80 ~ 110nm characterized in that the cover substrate manufacturing method.
  5. 제1항에 있어서,
    상기 딥 코팅 단계 전,
    상기 기판의 하면 가장자리를 따라 유효 화면 영역을 구획하는 베젤부를 형성하는 베젤부 형성 단계를 더 포함하는 것을 특징으로 하는 커버 기판 제조방법.    The method of claim 1,
    Before the dip coating step,
    And a bezel part forming step of forming a bezel part for partitioning an effective screen area along a bottom edge of the substrate.
  6. 제5항에 있어서,
    상기 베절부 형성 단계 후, 딥 코팅 단계 전
    상기 베젤부가 형성된 기판의 하면에 터치 전극을 형성하는 전극 형성 단계를 더 포함하는 것을 특징으로 하는 커버 기판 제조방법.    The method of claim 5,
    After the step forming step, before the dip coating step
    And forming an electrode on the lower surface of the substrate on which the bezel part is formed.
  7. 제1항에 있어서,
    상기 열처리 단계 후 상기 기판 상면에 형성된 SiO2 코팅막 상에 방오성 물질을 코팅하는 방오 코팅막 형성 단계를 더 포함하는 것을 특징으로 하는 커버 기판 제조방법.    The method of claim 1,
    And a step of forming an antifouling coating film on the SiO 2 coating film formed on the upper surface of the substrate after the heat treatment step.
  8. 제7항에 있어서,
    상기 방오성 물질은 탄소(C) 사슬에 불소(F)가 결합된 불소화합물인 것을 특징으로 하는 커버 기판 제조방법.    The method of claim 7, wherein
    The antifouling material is a cover substrate manufacturing method, characterized in that the fluorine compound in which fluorine (F) is bonded to the carbon (C) chain.
  9. 제8항에 있어서,
    상기 불소화합물은 알코올 또는 실란(silane) 작용기를 갖는 것을 특징으로 하는 커버 기판 제조방법.    The method of claim 8,
    The method of manufacturing a cover substrate, characterized in that the fluorine compound has an alcohol or a silane (silane) functional group.
  10. 제1항에 있어서,
    상기 기판은 화학 강화된 유리 기판인 것을 특징으로 하는 커버 기판 제조방법.    The method of claim 1,
    And the substrate is a chemically strengthened glass substrate.
PCT/KR2014/009175 2013-09-30 2014-09-30 Method for manufacturing cover substrate WO2015047017A1 (en)

Applications Claiming Priority (2)

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KR20130116157A KR20150037013A (en) 2013-09-30 2013-09-30 Manufacturing method of cover substrate
KR10-2013-0116157 2013-09-30

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000059818A (en) * 1999-03-09 2000-10-05 한형수 Producing method of the reflection preventive transparent sheet with a excellent antipollution
JP2007286554A (en) * 2006-04-20 2007-11-01 Kaneka Corp Antireflection film, antireflection base material and photoelectric converter provided with antireflection base material
JP2009088503A (en) * 2007-09-14 2009-04-23 Mitsubishi Chemicals Corp Laminated cover substrate for solar cell, solar cell and method for manufacturing the laminated cover substrate for solar cell
JP2012125746A (en) * 2010-12-17 2012-07-05 Ebara-Udylite Co Ltd Coating method and method of applying application liquid

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000059818A (en) * 1999-03-09 2000-10-05 한형수 Producing method of the reflection preventive transparent sheet with a excellent antipollution
JP2007286554A (en) * 2006-04-20 2007-11-01 Kaneka Corp Antireflection film, antireflection base material and photoelectric converter provided with antireflection base material
JP2009088503A (en) * 2007-09-14 2009-04-23 Mitsubishi Chemicals Corp Laminated cover substrate for solar cell, solar cell and method for manufacturing the laminated cover substrate for solar cell
JP2012125746A (en) * 2010-12-17 2012-07-05 Ebara-Udylite Co Ltd Coating method and method of applying application liquid

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