JP5111776B2 - Transparent conductive substrate - Google Patents
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- JP5111776B2 JP5111776B2 JP2006112668A JP2006112668A JP5111776B2 JP 5111776 B2 JP5111776 B2 JP 5111776B2 JP 2006112668 A JP2006112668 A JP 2006112668A JP 2006112668 A JP2006112668 A JP 2006112668A JP 5111776 B2 JP5111776 B2 JP 5111776B2
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- film
- transparent conductive
- conductive substrate
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- glass
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- 239000000758 substrate Substances 0.000 title claims description 40
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 33
- 239000011787 zinc oxide Substances 0.000 claims description 16
- 230000003746 surface roughness Effects 0.000 claims description 15
- 229910003437 indium oxide Inorganic materials 0.000 claims description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 238000004630 atomic force microscopy Methods 0.000 claims 2
- 239000010408 film Substances 0.000 description 105
- 239000002585 base Substances 0.000 description 45
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 23
- 239000011521 glass Substances 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 239000010410 layer Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 8
- 229910052681 coesite Inorganic materials 0.000 description 7
- 229910052906 cristobalite Inorganic materials 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 229910052682 stishovite Inorganic materials 0.000 description 7
- 229910052905 tridymite Inorganic materials 0.000 description 7
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- VNTDZUDTQCZFKN-UHFFFAOYSA-L zinc 2,2-dimethyloctanoate Chemical compound [Zn++].CCCCCCC(C)(C)C([O-])=O.CCCCCCC(C)(C)C([O-])=O VNTDZUDTQCZFKN-UHFFFAOYSA-L 0.000 description 3
- 150000003752 zinc compounds Chemical class 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 2
- ZBBLRPRYYSJUCZ-GRHBHMESSA-L (z)-but-2-enedioate;dibutyltin(2+) Chemical compound [O-]C(=O)\C=C/C([O-])=O.CCCC[Sn+2]CCCC ZBBLRPRYYSJUCZ-GRHBHMESSA-L 0.000 description 1
- LTMRRSWNXVJMBA-UHFFFAOYSA-L 2,2-diethylpropanedioate Chemical compound CCC(CC)(C([O-])=O)C([O-])=O LTMRRSWNXVJMBA-UHFFFAOYSA-L 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- ONIKNECPXCLUHT-UHFFFAOYSA-N 2-chlorobenzoyl chloride Chemical compound ClC(=O)C1=CC=CC=C1Cl ONIKNECPXCLUHT-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- RJGHQTVXGKYATR-UHFFFAOYSA-L dibutyl(dichloro)stannane Chemical compound CCCC[Sn](Cl)(Cl)CCCC RJGHQTVXGKYATR-UHFFFAOYSA-L 0.000 description 1
- AYOHIQLKSOJJQH-UHFFFAOYSA-N dibutyltin Chemical compound CCCC[Sn]CCCC AYOHIQLKSOJJQH-UHFFFAOYSA-N 0.000 description 1
- PKKGKUDPKRTKLJ-UHFFFAOYSA-L dichloro(dimethyl)stannane Chemical compound C[Sn](C)(Cl)Cl PKKGKUDPKRTKLJ-UHFFFAOYSA-L 0.000 description 1
- BEPAFCGSDWSTEL-UHFFFAOYSA-N dimethyl malonate Chemical compound COC(=O)CC(=O)OC BEPAFCGSDWSTEL-UHFFFAOYSA-N 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- ZJDCLINAWYFEFQ-UHFFFAOYSA-N indium;pentane-2,4-dione Chemical compound [In].CC(=O)CC(C)=O ZJDCLINAWYFEFQ-UHFFFAOYSA-N 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 125000005474 octanoate group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- AFCAKJKUYFLYFK-UHFFFAOYSA-N tetrabutyltin Chemical compound CCCC[Sn](CCCC)(CCCC)CCCC AFCAKJKUYFLYFK-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- CHJMFFKHPHCQIJ-UHFFFAOYSA-L zinc;octanoate Chemical compound [Zn+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O CHJMFFKHPHCQIJ-UHFFFAOYSA-L 0.000 description 1
- NHXVNEDMKGDNPR-UHFFFAOYSA-N zinc;pentane-2,4-dione Chemical compound [Zn+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O NHXVNEDMKGDNPR-UHFFFAOYSA-N 0.000 description 1
Images
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- Laminated Bodies (AREA)
- Surface Treatment Of Glass (AREA)
- Position Input By Displaying (AREA)
- Non-Insulated Conductors (AREA)
Description
本発明は、透明導電性基材に関する。より詳しくは、透明性と導電性に優れ、かつ耐久性にも優れた、特にタッチパネルに適した透明導電性基材に関する。 The present invention relates to a transparent conductive substrate. More specifically, the present invention relates to a transparent conductive substrate that is excellent in transparency and conductivity and excellent in durability, and particularly suitable for a touch panel.
タッチパネルは、２枚の透明導電性基材の電極面を相対するように配置された構造を有し、タッチペン又は指の押し圧により電極面どうしが接触して導通により位置検出をする。そして２枚の電極面が繰り返し接触するために電極の変形や傷つきが起こりやすかった。
そこで、従来のタッチパネルは、ペン又は指入力に対する耐久性の向上を図るために、種々の工夫がなされてきた。
The touch panel has a structure in which the electrode surfaces of the two transparent conductive substrates are opposed to each other, and the electrode surfaces come into contact with each other by pressing force of a touch pen or a finger to detect the position by conduction. Since the two electrode surfaces repeatedly contact each other, the electrodes are easily deformed or damaged.
In view of this, the conventional touch panel has been devised in various ways in order to improve the durability against pen or finger input.
たとえば、スズドープ酸化インジウムなどの透明導電膜自体に着目した方法としては、透明導電膜の金属酸化物の粒径を限定したり（特許文献１参照）、マイクロ波により透明導電膜を結晶化させたり（特許文献２参照）、また、透明導電膜を加熱処理して膜表面に針状突起を設けたもの（特許文献３）などがある。 For example, as a method focusing on the transparent conductive film itself such as tin-doped indium oxide, the particle size of the metal oxide of the transparent conductive film is limited (see Patent Document 1), or the transparent conductive film is crystallized by microwaves. (See Patent Document 2), and a transparent conductive film is heat-treated to provide needle-like protrusions on the film surface (Patent Document 3).
また、基材と透明導電性膜との間に中間層を設けることにより耐久性の向上を目指したものとしては、透明な金属（酸化）薄膜を設け、これらの膜厚と屈折率が適切な関係になるように選択したもの（特許文献４）、基材と透明導電性膜との間に設けた下地層の表面形状に着目して、下地層の表面形状を中心線平均粗さ（Ｒａ）が１００〜３００ｎｍ，かつ凹凸の平均間隔（Ｓｍ）が２０〜１００μｍ，十点平均粗さ（Ｒｚ）が０．６〜７．０μｍの範囲となるようにしたもの（特許文献５参照）などがある。 Moreover, as a thing aiming at the improvement of durability by providing an intermediate | middle layer between a base material and a transparent conductive film, a transparent metal (oxidation) thin film is provided, and these film thickness and refractive index are appropriate. Focusing on the surface shape of the underlayer provided between the base material and the transparent conductive film (Patent Document 4) selected so as to be related, the surface shape of the underlayer is represented by the centerline average roughness (Ra ) Is 100 to 300 nm, the average interval (Sm) of the unevenness is 20 to 100 μm, and the ten-point average roughness (Rz) is 0.6 to 7.0 μm (see Patent Document 5), etc. There is.
本発明は、膜の表面形状に凹凸をつけるという観点から、透明性及び導電性を損なわず、かつ耐久性に優れた透明導電性基材及びそれを用いたタッチパネルを提供することにある。 An object of the present invention is to provide a transparent conductive substrate excellent in durability and a touch panel using the same without impairing transparency and conductivity from the viewpoint of making the surface shape of the film uneven.
本発明者らは、基材と透明導電膜との間に設けた下地層の表面形状に着目し、下地膜用薬剤と成膜温度を選択することにより、透明性及び導電性を損なわず、かつ耐久性の向上に効果のある表面形状とすることができることを見出し、本発明を完成するに至った。 The present inventors pay attention to the surface shape of the base layer provided between the base material and the transparent conductive film, and by selecting the chemical for the base film and the film formation temperature, the transparency and conductivity are not impaired, And it discovered that it could be set as the surface shape effective in the improvement of durability, and came to complete this invention.
すなわち本発明は、（１）基材、下地膜及び透明導電膜がこの順で積層されてなる透明導電性基材であって、前記透明導電膜の原子間力顕微鏡による平均面粗さ（Ｒａ）が１．０〜５．０ｎｍである透明導電性基材、（２）透明導電膜の膜厚が１０〜２０ｎｍである上記（１）記載の透明導電性基材、（３）下地膜が酸化亜鉛又は酸化第二スズである上記（１）又は（２）に記載の透明導電性基材、（４）下地膜の原子間力顕微鏡による平均面粗さ（Ｒａ）が０．７〜５．０ｎｍである上記（１）〜（３）のいずれかに記載の透明導電性基材、（５）さらにその他の層を積層した上記（１）〜（４）のいずれかに記載の透明導電性基材、（６）その他の層が酸化ケイ素膜である上記（５）記載の透明導電性基材、（７）透明導電膜がスズドープ酸化インジウム膜である上記（１）〜（６）のいずれかに記載の透明導電性基材である。 That is, the present invention is (1) a transparent conductive substrate in which a substrate, a base film and a transparent conductive film are laminated in this order, and the average surface roughness (Ra of the transparent conductive film by an atomic force microscope) ) Is a transparent conductive substrate having a thickness of 1.0 to 5.0 nm, (2) the transparent conductive substrate is a transparent conductive substrate having a thickness of 10 to 20 nm, and (3) a base film is The transparent conductive substrate according to (1) or (2) above, which is zinc oxide or stannic oxide, and (4) the average surface roughness (Ra) of the underlying film by an atomic force microscope is 0.7 to 5 The transparent conductive substrate according to any one of the above (1) to (4), wherein the transparent conductive substrate according to any one of the above (1) to (3), which is 0.0 nm, and (5) further laminated with other layers. (6) The transparent conductive substrate according to (5) above, wherein the other layer is a silicon oxide film, and (7) the transparent conductive film is tin A transparent conductive substrate according to any one of indium oxide film (1) to (6).
また本発明は、上記（１）〜（７）のいずれかに記載の透明導電性基材を有するタッチパネルである。 Moreover, this invention is a touchscreen which has the transparent conductive base material in any one of said (1)-(7).
タッチパネルにおける透明導電性基材の表面形状は、その凹凸が緩いと導電膜部分の接触面積が大きくなり、入力時の磨耗劣化度合いが大きくなる。一方、凹凸がきついと透明性にかける。本発明の透明導電性基材は、下地層の表面形状を原子間力顕微鏡による平均面粗さ（Ｒａ）が０．７〜５．０ｎｍとなる凹凸を設けることにより、その上に積層する透明導電膜の平均面粗さ（Ｒａ）が１．０〜５．０ｎｍとなり、それをタッチパネルに使用した場合に、上下ガラスの貼り付きを減らし、耐久性を向上するのにもっとも好ましいことがわかった。
また、実施例の測定結果からもわかるとおり、下地膜を積層しても透明性及び導電性が実質的に低下することがなく、酸化ケイ素膜を下地膜と透明導電膜の間に設けた場合には、酸化ケイ素膜を設けない場合に比して透過率、導電性ともに向上することがわかった。
When the surface shape of the transparent conductive base material in the touch panel is loose, the contact area of the conductive film portion increases and the degree of wear deterioration during input increases. On the other hand, the unevenness is tight and transparent. The transparent conductive base material of the present invention is transparently laminated on the surface of the base layer by providing irregularities with an average surface roughness (Ra) of 0.7 to 5.0 nm by an atomic force microscope. The average surface roughness (Ra) of the conductive film was 1.0 to 5.0 nm, and when it was used for a touch panel, it was found to be most preferable for reducing the sticking of the upper and lower glass and improving the durability. .
In addition, as can be seen from the measurement results of the examples, even when the base film is laminated, the transparency and conductivity are not substantially lowered, and the silicon oxide film is provided between the base film and the transparent conductive film. It was found that both the transmittance and conductivity were improved as compared with the case where no silicon oxide film was provided.
なお、従来技術に例示されている特開２００３−３１６５０５号公報に記載された下地膜は基材と透明導電性膜との間に設けた下地層の表面形状に着目した点で類似しているが、当該従来技術は基材上に樹脂ワニスを塗布して熱また光により硬化させて作製されたものであるのに対し、本発明においては、酸化亜鉛又は酸化スズのような金属酸化物を特定温度で成膜するものである。このような下地用薬剤を用いて成膜することにより、上記特開２００３−３１６５０５号公報に記載された下地膜とは異なる形状を持つ下地膜を成膜することができ、それにより、あらたに産業上利用可能な透明導電性基材を提供することが可能となった。 In addition, the base film described in JP2003-316505A exemplified in the prior art is similar in that it focuses on the surface shape of the base layer provided between the base material and the transparent conductive film. However, in the present invention, a metal varnish such as zinc oxide or tin oxide is used in the present invention, whereas a resin varnish is applied on a substrate and cured by heat or light. The film is formed at a specific temperature. By forming a film using such a base chemical, it is possible to form a base film having a shape different from that of the base film described in Japanese Patent Application Laid-Open No. 2003-316505. It has become possible to provide a transparent conductive substrate that can be used industrially.
本発明の透明導電性基材は、基材、下地膜及び透明導電膜がこの順で積層されたものであるが、さらにその他の層を中間層又はコーティング層として積層させることもできる。 The transparent conductive substrate of the present invention is obtained by laminating a substrate, a base film and a transparent conductive film in this order, but other layers can be laminated as an intermediate layer or a coating layer.
（基材）
本発明の透明導電性基材に用いられる基材は、５５０ｎｍの波長の光の透過率が７０％以上であれば特に制限はなく、任意の材質、形状、付加的構成をとることができる。材質としては、たとえば、アルカリガラス、石英ガラスなどのガラス、ポリカーボネート、ポリエチレンテレフタレート、ポリアリレートなどのポリエステル、ポリエーテル系樹脂、アモルファスポリオレフィン、ポリスチレン、アクリル樹脂などがあり、ここでは特に、ガラスが好ましい。タッチパネルに使用する場合には、ガラスの５５０ｎｍの波長の光の透過率は、８０％以上であることが好ましいが、より好ましくは９０％以上であり、さらに好ましくは９５％以上であり、最も好ましくは９８％以上である。
(Base material)
The substrate used for the transparent conductive substrate of the present invention is not particularly limited as long as the transmittance of light having a wavelength of 550 nm is 70% or more, and can take any material, shape, and additional configuration. Examples of the material include glass such as alkali glass and quartz glass, polyester such as polycarbonate, polyethylene terephthalate, and polyarylate, polyether resin, amorphous polyolefin, polystyrene, and acrylic resin, and glass is particularly preferable here. When used for a touch panel, the transmittance of light having a wavelength of 550 nm of glass is preferably 80% or more, more preferably 90% or more, still more preferably 95% or more, and most preferably. Is 98% or more.
（下地膜）
本発明の下地膜は、原子間力顕微鏡（ＡＦＭ）による平均面粗さ（Ｒａ）が０．７〜５．０ｎｍ、好ましくは１．０〜５．０ｎｍである。最大高低差（ＲＰ−Ｖ）は通常１０〜６０ｎｍであるが、好ましくは１０〜３０ｎｍである。
(Undercoat)
The undercoat film of the present invention has an average surface roughness (Ra) by an atomic force microscope (AFM) of 0.7 to 5.0 nm, preferably 1.0 to 5.0 nm. The maximum height difference (RP-V) is usually 10 to 60 nm, preferably 10 to 30 nm.
平均面粗さ（Ｒａ）とは、基準面（指定面の高さの平均値となるフラット面）から指定面までの偏差の絶対値を平均した値であり、次式で算出される。
Ｒａ＝１／Ｓ0∬｜Ｆ（Ｘ，Ｙ）−Ｚ0｜ｄＸｄＹ
ここで、Ｓ0は基準面の面積、Ｚ0は基準面の高さ、Ｆ（Ｘ，Ｙ）は座標（Ｘ，Ｙ）における指定面の高さを表す。
平均面粗さ（Ｒａ）及び最大高低差（ＲＰ−Ｖ）を算出するために必要な測定値は、例えばNanopics（エスアイアイ・ナノテクノロジー株式会社製）等の原子間力顕微鏡を用いて測定することができる。本発明における平均面粗さ及び最大高低差の数値は、それぞれ、対象となる膜表面の縦４μｍ×横４μｍの任意の範囲における平均面粗さ及び最大高低差を意味する。
The average surface roughness (Ra) is a value obtained by averaging the absolute values of deviations from the reference surface (a flat surface that is an average value of the height of the designated surface) to the designated surface, and is calculated by the following equation.
Ra = 1 / S 0 ∬ | F (X, Y) −Z 0 | dXdY
Here, S 0 represents the area of the reference surface, Z 0 represents the height of the reference surface, and F (X, Y) represents the height of the designated surface at the coordinates (X, Y).
Measurement values necessary for calculating the average surface roughness (Ra) and the maximum height difference (RP-V) are measured using an atomic force microscope such as Nanopics (manufactured by SII Nanotechnology Co., Ltd.). be able to. The numerical values of the average surface roughness and the maximum height difference in the present invention mean the average surface roughness and the maximum height difference in an arbitrary range of 4 μm × 4 μm on the target film surface, respectively.
本発明における下地膜の膜厚は、通常５〜２０ｎｍである。５ｎｍより小さいと成膜が困難であり、２０ｎｍを越えると透過率が下がる。膜厚は、例えばＳＥ８００（ＳＥＮＴＥＣＨ社製）等の分光エリプソメーターを用いて測定することができる。 The film thickness of the base film in the present invention is usually 5 to 20 nm. If it is smaller than 5 nm, film formation is difficult, and if it exceeds 20 nm, the transmittance decreases. The film thickness can be measured using, for example, a spectroscopic ellipsometer such as SE800 (manufactured by SENTTECH).
本発明の下地膜の材質としては、原子間力顕微鏡（ＡＦＭ）による平均面粗さ（Ｒａ）が０．７〜５．０ｎｍである膜を形成し得る限り特に制限されないが、金属酸化物が好適である。特に酸化亜鉛（ＺｎＯ）や酸化第二スズ（ＳｎＯ２）が好ましい。 The material of the base film of the present invention is not particularly limited as long as it can form a film having an average surface roughness (Ra) of 0.7 to 5.0 nm by an atomic force microscope (AFM). Is preferred. In particular, zinc oxide (ZnO) and stannic oxide (SnO 2 ) are preferable.
酸化亜鉛用の薬剤としては、熱分解して酸化亜鉛になるものが好ましく、たとえば、ジンクアセチルアセトネート、オクチル酸亜鉛、酢酸亜鉛、ネオデカン酸亜鉛、硝酸亜鉛などを例示することができ、好ましくはネオデカン酸亜鉛である。
一方、酸化第二スズ用の薬剤としては、熱分解して酸化第二スズとなるものが好ましく、例えば、塩化第二スズ、ジメチルスズジクロライド、ジブチルスズジクロライド、テトラブチルスズ、スタニアスオクトエート（Ｓｎ（ＯＣＯＣ７Ｈ１５）２）、ジブチルスズマレエート、ジブチルスズビスアセチルアセトナート、ジブチルスズジアセテート等を例示することができ、ジブチルスズジアセテートが好ましい。
The agent for zinc oxide is preferably one that is thermally decomposed to become zinc oxide, and examples thereof include zinc acetylacetonate, zinc octylate, zinc acetate, zinc neodecanoate, and zinc nitrate. Zinc neodecanoate.
On the other hand, as a chemical | medical agent for stannic oxide, what decomposes | disassembles thermally and becomes stannic oxide is preferable, for example, stannic chloride, dimethyltin dichloride, dibutyltin dichloride, tetrabutyltin, stania octoate (Sn ( OCOC 7 H 15 ) 2 ), dibutyltin maleate, dibutyltin bisacetylacetonate, dibutyltin diacetate and the like can be exemplified, and dibutyltin diacetate is preferred.
（透明導電膜）
本発明における透明導電膜は、具体的には、スズドープ酸化インジウム膜（ＩＴＯ膜）、フッ素ドープ酸化スズ膜（ＦＴＯ膜）、アンチモンドープ酸化亜鉛膜及びインジウムドープ酸化亜鉛膜等を例示することができるが、ここでは特にスズドープ酸化インジウム膜が好適である。原子間力顕微鏡（ＡＦＭ）による平均面粗さ（Ｒａ）は１．０〜５．０ｎｍを有する。最大高低差（ＲＰ−Ｖ）は通常１０〜６０ｎｍであるが、好ましくは１０〜３０ｎｍである。また、透明導電膜の膜厚は、特にタッチパネル用としては１０〜２０ｎｍが好ましい。
(Transparent conductive film)
Specific examples of the transparent conductive film in the present invention include a tin-doped indium oxide film (ITO film), a fluorine-doped tin oxide film (FTO film), an antimony-doped zinc oxide film, and an indium-doped zinc oxide film. However, a tin-doped indium oxide film is particularly suitable here. The average surface roughness (Ra) measured by an atomic force microscope (AFM) is 1.0 to 5.0 nm. The maximum height difference (RP-V) is usually 10 to 60 nm, preferably 10 to 30 nm. Further, the film thickness of the transparent conductive film is preferably 10 to 20 nm particularly for a touch panel.
（その他の層）
本発明の透明導電性基材は、本発明の基材、下地膜及び透明導電膜のみをこの順で有していてもよいが、本発明の透明導電性基材の透明性及び導電性を損なわない限り、これら以外に任意の層を有していてもよい。そのような層として、透明導電膜の外側の面、下地膜と透明導電膜の間、基材と下地膜の間、あるいは基材の外側の面に、１層又は２層以上設けることができる。その他の膜の具体例としては、酸化ケイ素膜、酸化マグネシウム膜、酸化アルミニウム膜、酸化ゲルマニウム膜、反射防止膜、カラーフィルター、配向膜、液晶膜等が挙げられる。また、本発明の透明導電性基材はいずれかの部分に１層又は２層以上の空気層を有していてもよい。また、本発明の透明導電性基材は、本発明の基材、下地膜及び透明導電膜をこの順でそれぞれ１層ずつ有していればよいが、本発明の基材、下地膜及び透明導電膜のいずれか１つ又は２つ以上を２層以上有していてもよい。例えば、基材、下地膜、透明導電膜、下地膜の順で有するものや、透明導電膜、下地膜、基材、下地膜、透明導電膜の順で有するものも、本発明の透明導電性基材に含まれる。
(Other layers)
The transparent conductive substrate of the present invention may have only the substrate of the present invention, the base film and the transparent conductive film in this order. However, the transparency and conductivity of the transparent conductive substrate of the present invention are the same. As long as it does not impair, you may have arbitrary layers other than these. As such a layer, one layer or two or more layers can be provided on the outer surface of the transparent conductive film, between the base film and the transparent conductive film, between the base material and the base film, or on the outer surface of the base material. . Specific examples of other films include a silicon oxide film, a magnesium oxide film, an aluminum oxide film, a germanium oxide film, an antireflection film, a color filter, an alignment film, and a liquid crystal film. In addition, the transparent conductive substrate of the present invention may have one layer or two or more air layers in any part. Further, the transparent conductive substrate of the present invention may have one layer each of the substrate of the present invention, the base film and the transparent conductive film in this order. Any one or two or more of the conductive films may be provided. For example, what has in order of a base material, a base film, a transparent conductive film, and a base film, and what has it in order of a transparent conductive film, a base film, a base material, a base film, and a transparent conductive film also have the transparent conductivity of the present invention. Included in the substrate.
（膜の製造法）
本発明の膜の製造方法としては、スパッター法、電子ビーム蒸着法、イオンプレーティング法、化学気相成膜法（ＣＶＤ法）、パイロゾル法等の一般的な成膜方法を用いることができる。スパッター法によれば、例えば亜鉛化合物を酸素ガス存在下で焼結させたもの等をターゲットとして用いることにより、酸化亜鉛からなる下地膜を成膜することができる。また、電子ビーム法やイオンプレーテイング法によれば、例えば亜鉛化合物を酸素ガス存在下で焼結させたもの等を蒸発物質として用いることにより、酸化亜鉛からなる下地膜を成膜することができる。また、化学気相成膜法やパイロゾル法によれば、例えば亜鉛化合物を含有する有機溶媒溶液（下地膜形成液）等を蒸発物として用いることにより、酸化亜鉛からなる下地膜を成膜することができる。
(Membrane production method)
As a film production method of the present invention, a general film formation method such as a sputtering method, an electron beam evaporation method, an ion plating method, a chemical vapor deposition method (CVD method), a pyrosol method, or the like can be used. According to the sputtering method, for example, a base film made of zinc oxide can be formed by using a zinc compound sintered in the presence of oxygen gas as a target. In addition, according to the electron beam method or the ion plating method, for example, by using a zinc compound sintered in the presence of oxygen gas as an evaporating substance, a base film made of zinc oxide can be formed. . In addition, according to the chemical vapor deposition method or the pyrosol method, for example, an organic solvent solution (underlying film forming liquid) containing a zinc compound is used as an evaporant to form a base film made of zinc oxide. Can do.
化学気相成膜法（ＣＶＤ法）、パイロゾル法等で用いる蒸発物中の有機溶媒溶液としては、成膜を妨げない限り特に制限はないが、アセトン、アセチルアセトン、メチルイソブチルケトン、ジエチルケトン等のケトン系溶媒、メタノール、エタノール、プロパノール、イソプロパノール、ブタノール等のアルコール系溶媒、アセト酢酸メチル、アセト酢酸エチル、マロン酸ジメチル、マロン酸ジエチル、酢酸エチル、酢酸ブチル等のエステル系溶媒、メチルセルソルブ、テトラヒドロフラン等のエーテル系溶媒、ベンゼン、トルエン、キシレン等の芳香族炭化水素類、ヘキサン、ヘプタン、オクタン、シクロヘキサン等の脂肪族炭化水素類等を例示することができる。 The organic solvent solution in the evaporant used in the chemical vapor deposition method (CVD method), pyrosol method, etc. is not particularly limited as long as it does not interfere with the film formation, but acetone, acetylacetone, methyl isobutyl ketone, diethyl ketone, etc. Ketone solvents, alcohol solvents such as methanol, ethanol, propanol, isopropanol, butanol, ester solvents such as methyl acetoacetate, ethyl acetoacetate, dimethyl malonate, diethyl malonate, ethyl acetate, butyl acetate, methyl cellosolve, Examples thereof include ether solvents such as tetrahydrofuran, aromatic hydrocarbons such as benzene, toluene and xylene, and aliphatic hydrocarbons such as hexane, heptane, octane and cyclohexane.
なお、本発明の下地膜を成膜するにはパイロゾル法が好ましく、パイロゾル法による下地膜の成膜温度は通常４２０〜４３０℃程度で行われるが、本発明においてはそれよりも高温度で行うのが好ましい。酸化亜鉛膜の場合は、４５０〜５００℃、好ましくは４７０〜４９０℃であり、酸化第二スズ膜の場合には、４５０〜５５０℃、好ましくは４９０〜５２０℃である。 In order to form the base film of the present invention, the pyrosol method is preferable, and the film formation temperature of the base film by the pyrosol method is usually about 420 to 430 ° C., but in the present invention, it is performed at a higher temperature. Is preferred. In the case of a zinc oxide film, it is 450-500 degreeC, Preferably it is 470-490 degreeC, In the case of a stannic oxide film, it is 450-550 degreeC, Preferably it is 490-520 degreeC.
以下、実施例により本発明をより具体的に説明するが、本発明の技術的範囲はこれらの例示に限定されるものではない。
以下の実施例は、いずれもパイロゾル法によりガラス基板に透明導電性積層体を作製した。
EXAMPLES Hereinafter, although an Example demonstrates this invention more concretely, the technical scope of this invention is not limited to these illustrations.
In the following examples, a transparent conductive laminate was produced on a glass substrate by a pyrosol method.
（実施例１）ガラス／ＺｎＯ／ＳｉＯ２／ＩＴＯ積層体
５００℃に加熱したコンベアー炉を３基（炉（１）〜（３））連結し、アルカリガラス基板（３００×４００×０．７ｍｍ）をベルトコンベアー内に投入し、第１基においては酸化亜鉛膜形成用溶液（０．２モル／ｌのネオデカン酸亜鉛を含むエタノール溶液）、第２基においてはＳｉＯ２膜形成溶液（テトラエトキシシラン）、第３基においてはＩＴＯ膜形成溶液（塩化第２スズを１２％含むインジウムアセチルアセトンを０．２モル／ｌ含むアセチルアセトン溶液）をそれぞれ用い、超音波で霧滴状にして空気をキャリアガスとしてコンベアー炉の中に吹き込み、ガラス基板の表面に接触させて熱分解させることにより、積層体を連続的に作製した。得られた積層体は、ガラス／ＺｎＯ（１０ｎｍ）／ＳｉＯ２（３０ｎｍ）／ＩＴＯ（１８ｎｍ）であった。
(Example 1) Glass / ZnO / SiO2 / ITO laminate Three conveyor furnaces heated to 500 ° C. (furnace (1) to (3)) were connected, and an alkali glass substrate (300 × 400 × 0.7 mm) was connected. Into the belt conveyor, in the first group, a zinc oxide film forming solution (ethanol solution containing 0.2 mol / l of zinc neodecanoate), in the second group, a SiO2 film forming solution (tetraethoxysilane), In the third group, an ITO film forming solution (acetylacetone solution containing 0.2 mol / l of indium acetylacetone containing 12% stannic chloride) was used, respectively, and ultrasonically atomized into a conveyor furnace using air as a carrier gas. The laminate was continuously produced by blowing into the glass substrate and bringing it into thermal contact with the surface of the glass substrate. The obtained laminate was glass / ZnO (10 nm) / SiO 2 (30 nm) / ITO (18 nm).
（実施例２）ガラス／ＳｎＯ２／ＳｉＯ２／ＩＴＯ積層体
コンベアー炉第１基において酸化第二スズ膜形成用溶液（０．２モル／ｌのジブチルスズジアセテートを含むアセチルアセトン溶液）を使用した以外は、実施例１と同じ方法で積層体を作製した。得られた積層体は、ガラス／ＳｎＯ２（１５ｎｍ）／ＳｉＯ２（３０ｎｍ）／ＩＴＯ（１８ｎｍ）であった。
(Example 2) Glass / SnO2 / SiO2 / ITO laminate Except for using a solution for forming a stannic oxide film (acetylacetone solution containing 0.2 mol / l dibutyltin diacetate) in the first conveyor furnace, A laminate was prepared in the same manner as in Example 1. The obtained laminated body was glass / SnO2 (15 nm) / SiO2 (30 nm) / ITO (18 nm).
（実施例３）ガラス／ＺｎＯ／ＩＴＯ積層体
コンベアー炉第２基においてＳｉＯ２膜形成溶液を噴霧することなく基材を通過させて行った以外は、実施例１と同じ方法で積層体を作製した。得られた積層体は、ガラス／ＺｎＯ（１０ｎｍ）／ＩＴＯ（１８ｎｍ）であった。
(Example 3) Glass / ZnO / ITO laminate A laminate was produced in the same manner as in Example 1 except that the substrate was passed through the second conveyor furnace without spraying the SiO2 film-forming solution. . The obtained laminate was glass / ZnO (10 nm) / ITO (18 nm).
（実施例４）ガラス／ＳｎＯ２／ＩＴＯ積層体
コンベアー炉第１基において酸化第二スズ膜形成用溶液（０．２モル／ｌのジブチルスズジアセテートを含むアエチルアセトン溶液）を使用した以外は、実施例３と同じ方法で積層体を作製した。得られた積層体は、ガラス／ＳｎＯ２（１５ｎｍ）／ＩＴＯ（１８ｎｍ）であった。
他方、比較のため、下地膜を有しない積層体を作製した。
(Example 4) Glass / SnO2 / ITO laminate Except for using a solution for forming a stannic oxide film (ethylacetone solution containing 0.2 mol / l dibutyltin diacetate) in the first conveyor furnace, A laminate was produced in the same manner as in Example 3. The resulting laminate was glass / SnO2 (15 nm) / ITO (18 nm).
On the other hand, for comparison, a laminate having no base film was produced.
（比較例１）ガラス／ＩＴＯ積層体
コンベアー炉第１基において下地膜形成用溶液を噴霧することなく基材を通過させた以外は、実施例３と同じ方法で積層体を作製した。得られた積層体は、ガラス／ＩＴＯ（１８ｎｍ）であった。
Comparative Example 1 Glass / ITO Laminate A laminate was produced in the same manner as in Example 3 except that the base material was passed through the first conveyor furnace without spraying the base film forming solution. The resulting laminate was glass / ITO (18 nm).
（比較例２）ガラス／ＳｉＯ２／ＩＴＯ積層体
コンベアー炉第１基においては下地膜形成用溶液を噴霧することなく基材を通過させた以外は、実施例１と同じ方法で積層体を作製した。得られた積層体は、ガラス／ＳｉＯ２（３０ｎｍ）／ＩＴＯ（１８ｎｍ）であった。
(Comparative Example 2) Glass / SiO2 / ITO laminate A laminate was produced in the same manner as in Example 1 except that the substrate was passed through the first conveyor furnace without spraying the base film forming solution. . The obtained laminate was glass / SiO 2 (30 nm) / ITO (18 nm).
上記実施例１〜４及び比較例１〜２について次の測定を行った。
（シート抵抗値）
４端子４深針法により、面内９点を測定しその平均値を求めた。その結果を表１に示す。実施例１及び２はガラス／下地膜／ＳｉＯ２膜／ＩＴＯ膜からなる積層体であり、比較例２がそれらに対応する。また、実施例３及び４はガラス／下地膜／ＩＴＯ膜からなる積層体であり、比較例１がそれらに対応する。測定結果から、下地膜を付加してもシート抵抗値はむしろ低くなっており、導電性が低下しないことが分かった。
The following measurements were performed on Examples 1-4 and Comparative Examples 1-2.
(Sheet resistance value)
Nine points in the plane were measured by the 4-terminal 4-deep needle method, and the average value was obtained. The results are shown in Table 1. Examples 1 and 2 are laminated bodies composed of glass / underlayer film / SiO 2 film / ITO film, and Comparative Example 2 corresponds to them. Examples 3 and 4 are laminates composed of glass / underlayer / ITO film, and Comparative Example 1 corresponds to them. From the measurement results, it was found that even when a base film was added, the sheet resistance value was rather low and the conductivity was not lowered.
（可視光透過率）
Ｕ４０００（日立社製）を用いて測定した。その結果を表２に示す。
表２には、測定波長４００、５００、５００及び７００ｎｍにおけるそれぞれの透過率（％）を表示した。実施例１〜３は比較例と同等の透過率を示した。実施例４においてやや低い透過率を示したが、実用的には問題のない程度であった。
(Visible light transmittance)
It measured using U4000 (made by Hitachi). The results are shown in Table 2.
Table 2 shows the respective transmittances (%) at the measurement wavelengths of 400, 500, 500, and 700 nm. Examples 1-3 showed the transmittance | permeability equivalent to a comparative example. In Example 4, the transmittance was slightly low, but it was practically no problem.
（平均面粗さＲａ及び最大高低差ＲＰ−Ｖ）
原子間力顕微鏡（Nanopics：エスアイアイナノテクノロジー社製）を用いて測定した。その結果を図１に示す。
図１の結果から、本発明の透明導電性基材を用いた場合、平均面粗さが１．０ｎｍより大きい膜が面内均一に得られ、比較例１〜２に比べ凹凸を有する膜が得られる。また、ＳｉＯ２を成膜しても、その凹凸は失われることが無いことがわかった。
(Average surface roughness Ra and maximum height difference RP-V)
The measurement was performed using an atomic force microscope (Nanopics: manufactured by SII Nano Technology). The result is shown in FIG.
From the results shown in FIG. 1, when the transparent conductive substrate of the present invention is used, a film having an average surface roughness of more than 1.0 nm is obtained uniformly in the surface, and a film having irregularities as compared with Comparative Examples 1 and 2 is obtained. can get. Further, it has been found that even when SiO2 is formed, the unevenness is not lost.
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