WO2015037748A1 - 열처리 장치 및 이를 구비한 열처리 시스템 - Google Patents

열처리 장치 및 이를 구비한 열처리 시스템 Download PDF

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Publication number
WO2015037748A1
WO2015037748A1 PCT/KR2013/008138 KR2013008138W WO2015037748A1 WO 2015037748 A1 WO2015037748 A1 WO 2015037748A1 KR 2013008138 W KR2013008138 W KR 2013008138W WO 2015037748 A1 WO2015037748 A1 WO 2015037748A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat treatment
main body
heater
chamber
enclosure
Prior art date
Application number
PCT/KR2013/008138
Other languages
English (en)
French (fr)
Korean (ko)
Inventor
이병일
이영호
허관선
Original Assignee
주식회사 테라세미콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 테라세미콘 filed Critical 주식회사 테라세미콘
Priority to CN201380079510.6A priority Critical patent/CN105556651B/zh
Priority to JP2016542618A priority patent/JP2016535459A/ja
Priority to PCT/KR2013/008138 priority patent/WO2015037748A1/ko
Publication of WO2015037748A1 publication Critical patent/WO2015037748A1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Definitions

  • the conventional heat treatment apparatus for forming the CIGS layer has a disadvantage in that the cost increases when manufacturing a chamber for processing a large area substrate with quartz or ceramic.
  • the heat treatment system according to the present invention for achieving the above object is a chamber in which a plurality of substrates each of which is loaded with a plurality of boats are stored in the loading chamber is formed, the front and rear of the main body, the front and rear and left and right of the main body is formed A heat treatment apparatus slidably installed in a direction, the door configured to open and close the entrance and exit, and a first heater installed inside the main body to heat the substrate; A first transporting device that slides the door in the front, rear, left, and right directions of the main body; A second transfer device which transfers the boat to be loaded into or unloaded from the chamber; And a cooling device installed at one side of the heat treatment device to cool the heat treated substrate by receiving the boat from the second transfer device.
  • the heat treatment apparatus 100 includes a main body 110 forming an appearance.
  • a chamber 110a which is a space in which a substrate 50 (see FIG. 5) such as glass is loaded and processed, is formed in the main body 110, and an entrance 110b through which the substrate 50 enters and exits is formed in the front surface. .
  • the main body 110 is formed of a metal material. As a result, a large amount of substrate 50 can be easily loaded and processed at a time, and since the main body 110 is not damaged, leakage of gas is prevented and cost is relatively low.
  • a plurality of substrates 50 are stored in a boat 500, and a plurality of boats 500 are loaded in the chamber 110a. That is, the substrate 50 is loaded and processed in the chamber 110a while being loaded and stored in the boat 500.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
PCT/KR2013/008138 2013-09-10 2013-09-10 열처리 장치 및 이를 구비한 열처리 시스템 WO2015037748A1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201380079510.6A CN105556651B (zh) 2013-09-10 2013-09-10 热处理装置以及具备该热处理装置的热处理系统
JP2016542618A JP2016535459A (ja) 2013-09-10 2013-09-10 熱処理装置及びそれを備えた熱処理システム
PCT/KR2013/008138 WO2015037748A1 (ko) 2013-09-10 2013-09-10 열처리 장치 및 이를 구비한 열처리 시스템

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/KR2013/008138 WO2015037748A1 (ko) 2013-09-10 2013-09-10 열처리 장치 및 이를 구비한 열처리 시스템

Publications (1)

Publication Number Publication Date
WO2015037748A1 true WO2015037748A1 (ko) 2015-03-19

Family

ID=52665841

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2013/008138 WO2015037748A1 (ko) 2013-09-10 2013-09-10 열처리 장치 및 이를 구비한 열처리 시스템

Country Status (3)

Country Link
JP (1) JP2016535459A (zh)
CN (1) CN105556651B (zh)
WO (1) WO2015037748A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114823331A (zh) * 2022-04-22 2022-07-29 江苏晟驰微电子有限公司 一种用于三极管器件制造的氮氢退火设备及其工艺

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102405723B1 (ko) * 2017-08-18 2022-06-07 어플라이드 머티어리얼스, 인코포레이티드 고압 및 고온 어닐링 챔버
JP6826166B2 (ja) * 2018-08-16 2021-02-03 ウォニク アイピーエス カンパニー リミテッドＷｏｎｉｋ Ｉｐｓ Ｃｏ．，Ｌｔｄ． 熱処理システム及び熱処理装置
JP7203588B2 (ja) * 2018-12-17 2023-01-13 東京エレクトロン株式会社 熱処理装置
CN110190012B (zh) * 2019-05-22 2021-07-16 昆山国显光电有限公司 一种加热设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110121407A (ko) * 2010-04-30 2011-11-07 주식회사 테라세미콘 기판 처리 장치
KR20120077375A (ko) * 2010-12-30 2012-07-10 엘아이지에이디피 주식회사 평판표시소자 제조장치의 진공챔버
KR20130010291A (ko) * 2011-07-18 2013-01-28 한국광기술원 셀렌화에 의한 광흡수층 제조장치
KR20130051128A (ko) * 2011-11-09 2013-05-20 주식회사 아바코 박막형 태양전지 제조용 열처리 장치, 열처리 방법 및 이를 이용한 박막형 태양전지 제조 방법
KR101274130B1 (ko) * 2011-08-22 2013-06-13 주식회사 테라세미콘 Ｃｉｇｓ층 형성장치

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3531083B2 (ja) * 1996-02-27 2004-05-24 宮崎沖電気株式会社 拡散炉石英管のフレキシブルシャッター
JP2004230389A (ja) * 2003-01-28 2004-08-19 Showa Aircraft Ind Co Ltd リフロー装置
JP5015859B2 (ja) * 2008-05-16 2012-08-29 株式会社アルバック 搬送装置および処理装置
CN102859667A (zh) * 2010-04-30 2013-01-02 泰拉半导体株式会社 基板处理装置
JP5698059B2 (ja) * 2011-04-08 2015-04-08 株式会社日立国際電気 基板処理装置、及び、太陽電池の製造方法
CN104067378A (zh) * 2011-12-01 2014-09-24 株式会社日立国际电气 衬底处理装置及搬运装置
CN104160480A (zh) * 2011-12-28 2014-11-19 株式会社日立国际电气 衬底处理装置及使用该装置的衬底处理方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110121407A (ko) * 2010-04-30 2011-11-07 주식회사 테라세미콘 기판 처리 장치
KR20120077375A (ko) * 2010-12-30 2012-07-10 엘아이지에이디피 주식회사 평판표시소자 제조장치의 진공챔버
KR20130010291A (ko) * 2011-07-18 2013-01-28 한국광기술원 셀렌화에 의한 광흡수층 제조장치
KR101274130B1 (ko) * 2011-08-22 2013-06-13 주식회사 테라세미콘 Ｃｉｇｓ층 형성장치
KR20130051128A (ko) * 2011-11-09 2013-05-20 주식회사 아바코 박막형 태양전지 제조용 열처리 장치, 열처리 방법 및 이를 이용한 박막형 태양전지 제조 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114823331A (zh) * 2022-04-22 2022-07-29 江苏晟驰微电子有限公司 一种用于三极管器件制造的氮氢退火设备及其工艺
CN114823331B (zh) * 2022-04-22 2023-03-03 江苏晟驰微电子有限公司 一种用于三极管器件制造的氮氢退火设备及其工艺

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Publication number Publication date
JP2016535459A (ja) 2016-11-10
CN105556651B (zh) 2018-09-25
CN105556651A (zh) 2016-05-04

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