WO2015037711A1 - Conductive particles, conducting material, and connection structure - Google Patents

Conductive particles, conducting material, and connection structure Download PDF

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Publication number
WO2015037711A1
WO2015037711A1 PCT/JP2014/074260 JP2014074260W WO2015037711A1 WO 2015037711 A1 WO2015037711 A1 WO 2015037711A1 JP 2014074260 W JP2014074260 W JP 2014074260W WO 2015037711 A1 WO2015037711 A1 WO 2015037711A1
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Prior art keywords
conductive
particles
protrusion
protrusions
particle
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PCT/JP2014/074260
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French (fr)
Japanese (ja)
Inventor
仁志 山際
昌男 笹平
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積水化学工業株式会社
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Application filed by 積水化学工業株式会社 filed Critical 積水化学工業株式会社
Priority to CN201480021985.4A priority Critical patent/CN105210157B/en
Priority to JP2014546221A priority patent/JP5719483B1/en
Priority to KR1020157021917A priority patent/KR101614675B1/en
Publication of WO2015037711A1 publication Critical patent/WO2015037711A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02Contact members
    • H01R13/03Contact members characterised by the material, e.g. plating, or coating materials
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    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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    • H01R4/04Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
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Definitions

  • the present invention relates to conductive particles comprising base particles and conductive portions arranged on the surface of the base particles, and the conductive portions having a plurality of protrusions on the outer surface.
  • the present invention also relates to a conductive material and a connection structure using the conductive particles.
  • Anisotropic conductive materials such as anisotropic conductive paste and anisotropic conductive film are widely known.
  • anisotropic conductive material conductive particles are dispersed in a binder resin.
  • the anisotropic conductive material may be connected between a flexible printed circuit board and a glass substrate (FOG (Film on Glass)), or connected between a semiconductor chip and a flexible printed circuit board (COF ( (Chip on Film)), connection between a semiconductor chip and a glass substrate (COG (Chip on Glass)), connection between a flexible printed circuit board and a glass epoxy substrate (FOB (Film on Board)), and the like.
  • FOG Flexible printed circuit board
  • COF Chip on Film
  • COG Chip on Glass
  • F Chip on Glass
  • conductive particles conductive particles having base particles and conductive portions arranged on the surfaces of the base particles may be used.
  • Patent Document 1 discloses conductive particles having core material particles (base material particles) and a metal or alloy film on the surface of the core material particles. .
  • the conductive particles have a plurality of protrusions protruding from the surface of the film.
  • the protrusion is composed of a particle connected body in which a plurality of metal or alloy particles are connected in a row.
  • conductive particles having a ratio of the connecting protrusions of 32% or more are shown.
  • Patent Document 2 discloses conductive particles in which a nickel conductive layer or a nickel alloy conductive layer is formed on the surface of spherical base particles having an average particle diameter of 1 to 20 ⁇ m by an electroless plating method.
  • the conductive particles have minute protrusions of 0.05 to 4 ⁇ m on the outermost layer of the conductive layer.
  • the conductive layer and the protrusion are substantially continuously connected.
  • Resin particles are used as the substrate particles.
  • connection resistance may increase.
  • An oxide film is often formed on the surface of the electrode and the surface of the conductive particles.
  • the protrusions are easily broken, and as a result, the protrusions may not sufficiently penetrate the oxide film. For this reason, the connection resistance between electrodes may become high.
  • the method includes a base particle and a conductive portion disposed on a surface of the base particle, the conductive portion has a plurality of protrusions on an outer surface, and the conductive portion is a crystal.
  • a conductive particle having a structure in which a crystal structure is continuous between a portion having the protrusion and a portion having no protrusion in the conductive portion.
  • the conductive portion is formed of a metal or a metal alloy
  • the protrusion includes a plurality of the metal or metal alloy particles connected in a row.
  • a plurality of first protrusions formed of the metal or metal alloy, and the protrusions are formed by connecting a plurality of particles of the metal or metal alloy in a row.
  • At least one second protrusion formed by a particle connected body in which a plurality of particles of the metal or metal alloy are connected in a row does not have the second protrusion formed by the particle connected body. 70% or more of the total number of the first protrusions and the second protrusions of 100% is the first protrusions.
  • 90% or more of 100% of the total number of the first protrusions and the second protrusions is the first protrusions.
  • the crystallite size in the conductive part is 0.1 nm or more and 100 nm or less.
  • the crystal lattice distortion in the conductive part is 0.0001% or more and 10% or less.
  • the conductive part contains nickel.
  • the conductive particle does not have a core material for raising the outer surface of the conductive part inside and inside the conductive part.
  • the height of the protrusion is 1/100 or more of the particle diameter of the conductive particle.
  • the conductive particle includes an insulating substance disposed on the outer surface of the conductive part.
  • a conductive material including the above-described conductive particles and a binder resin.
  • a first connection target member having a first electrode on the surface
  • a second connection target member having a second electrode on the surface
  • the first connection target member and the A connection portion connecting the second connection target member, and the connection portion is formed of the above-described conductive particles or formed of a conductive material including the conductive particles and a binder resin.
  • a connection structure in which the first electrode and the second electrode are electrically connected by the conductive particles.
  • the conductive particles according to the present invention include base particles and conductive portions arranged on the surfaces of the base particles, the conductive portions have a plurality of protrusions on the outer surface, and the conductive portions are crystals. Since the crystal structure is continuous between the portion having the protrusion and the portion without the protrusion in the conductive portion, the electrodes are electrically connected using the conductive particles according to the present invention. In this case, the connection resistance can be lowered.
  • FIG. 1 is a cross-sectional view showing conductive particles according to the first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing conductive particles according to the second embodiment of the present invention.
  • FIG. 3 is a cross-sectional view showing conductive particles according to the third embodiment of the present invention.
  • FIG. 4 is a cross-sectional view schematically showing a connection structure using conductive particles according to the first embodiment of the present invention.
  • the electroconductive particle which concerns on this invention is equipped with base material particle and the electroconductive part arrange
  • the conductive portion has a plurality of protrusions on the outer surface.
  • the conductive portion has a crystal structure.
  • the crystal structure is continuing in the part with the said protrusion in the said electroconductive part, and the part without the said protrusion.
  • connection resistance can be lowered when the electrodes are electrically connected using the conductive particles according to the present invention.
  • the reason for this is considered to be that the projection becomes relatively hard as a result of the crystal structure being continuous and becoming hard and having high spreadability.
  • the conductive portion has a crystal structure, and the crystal structure is continuous between the portion where the protrusion is present and the portion where the protrusion is not present in the conductive portion.
  • the portion without the protrusion is the first portion of the conductive portion, and the portion with the protrusion is the second portion that is thicker than the first portion. In the first portion, the outer surface of the conductive portion is not raised.
  • the crystallite size in the conductive part is preferably 0.1 nm or more, more preferably 1.73 nm or more, still more preferably 5 nm or more, preferably 100 nm or less, more Preferably it is 50 nm or less, More preferably, it is 10 nm or less.
  • the reason for this is that if the crystallite size of the conductive part is not less than the above lower limit and not more than the above upper limit, the protrusion becomes relatively hard as a result of becoming harder and further spreading. .
  • the protrusions are not easily broken when the electrodes are connected, and the protrusions are hardly damaged.
  • the protrusion sufficiently penetrates the oxide film on the surface of the electrode or the conductive particle, so that the connection resistance between the electrodes is further reduced. be able to.
  • the crystal lattice distortion in the conductive part is preferably 0.001% or more, more preferably 0.01% or more, still more preferably 0.1% or more, particularly Preferably it is 0.15% or more, Preferably it is 10% or less, More preferably, it is 5% or less, More preferably, it is 1% or less.
  • the ratio of the metal to be co-deposited with respect to the main metal the plating reaction, Optimization of speed, optimization of pH in the plating bath, optimization of temperature in the plating bath, and the like are appropriately performed.
  • the method for making the crystallite size in the conductive part finer is to make it finer by increasing the phosphorus content in the nickel conductive part, making it finer by increasing the boron content in the nickel conductive part, and organic luster in the plating solution.
  • Examples thereof include a method of refining by adding an agent and a method of refining by adding a metallic brightener.
  • an increase in the content of phosphorus and boron in the nickel-plated conductive part and the addition of an organic brightener are effective in reducing the crystallite size in the conductive part.
  • the method of lowering the pH of the plating solution to slow the reaction rate of the nickel plating solution examples thereof include a method of increasing the concentration of the phosphorus-based reducing agent and the boron-based reducing agent, and a method of increasing the concentration of the complexing agent in the nickel plating solution.
  • a method of increasing the concentration of the phosphorus-based reducing agent and the boron-based reducing agent examples thereof include a method of increasing the concentration of the complexing agent in the nickel plating solution.
  • 1 type may be used and 2 or more types may be used together.
  • organic brightener examples include saccharin, sodium naphthalene disulfonate, sodium naphthalene trisulfonate, sodium allyl sulfonate, sodium propargyl sulfonate, butynediol, propargyl alcohol, coumarin, formalin, ethoxylated polyethyleneimine, polyalkyl Examples include imine, polyethyleneimine, gelatin, dextrin, thiourea, polyvinyl alcohol, polyethylene glycol, polyacrylamide, cinnamic acid, nicotinic acid, and benzalacetone. As for the said organic type brightener, only 1 type may be used and 2 or more types may be used together.
  • organic brightener examples include ethoxylated polyethyleneimine, polyalkylimine, polyethyleneimine, and polyethylene glycol.
  • Examples of a method for reducing the crystal lattice distortion in the conductive part include a method of adding a metal stabilizer to the plating solution. Addition of the metal stabilizer improves the stability of the plating solution, lowers the crystal lattice distortion, and forms a plating film with good coverage on the substrate particles.
  • Examples of the metal stabilizer include lead compounds, bismuth compounds, thallium compounds, and vanadium compounds. Specific examples of the metal stabilizer include sulfates, carbonates, acetates, nitrates and hydrochlorides of metals (lead, bismuth, thallium, vanadium) constituting the compound. In consideration of the influence on the environment, a bismuth compound, a thallium compound or a vanadium compound is preferable.
  • the height of the protrusions in the conductive particles is preferably 0.001 ⁇ m or more, more preferably 0.05 ⁇ m or more, preferably 0.9 ⁇ m or less, more preferably 0.2 ⁇ m or less.
  • the height of the protrusion is an average of the heights of a plurality of protrusions per conductive particle.
  • the height of the projection is a virtual line of the conductive portion (dashed line shown in FIG. 1) on the assumption that there is no projection on the line (dashed line L1 shown in FIG. 1) connecting the center of the conductive particles and the tip of the projection.
  • L2 Indicates the distance from the top (on the outer surface of the spherical conductive particles assuming no projection) to the tip of the projection. That is, in FIG. 1, the distance from the intersection of the broken line L1 and the broken line L2 to the tip of the protrusion is shown.
  • the height of the protrusion is preferably 1/100 or more of the particle diameter of the conductive particles. / 15 or more is more preferable.
  • the height of the protrusion is preferably 1/6 or less of the particle diameter of the conductive particles. In all the examples described later, the height of the protrusion is not less than 1/15 and not more than 1/6 of the particle diameter of the conductive particles.
  • the number of the protrusions per conductive particle is preferably 3 or more, more preferably 5 or more.
  • the upper limit of the number of protrusions is not particularly limited.
  • the upper limit of the number of protrusions can be appropriately selected in consideration of the particle diameter of the conductive particles.
  • the surface area of the portion having the protrusion is preferably 30% or more, more preferably 50% or more.
  • the protrusions are not formed by connecting a plurality of particles of the metal or metal alloy in a row, and have a plurality of first protrusions formed of the metal or metal alloy. May be.
  • the protrusion does not have a second protrusion formed by a particle connected body in which a plurality of particles of the metal or metal alloy are connected in a row, or the particles of the metal or metal alloy are in a row
  • At least one second protrusion formed by a particle connected body connected to a plurality of particles may be provided.
  • the first protrusions and the second protrusions may be the first protrusions, and even in that case, the protrusions in the conductive part
  • the effect of the present invention can be obtained if the crystal structure is continuous between the portion having the protrusion and the portion having no protrusion.
  • the second protrusion is more likely to be broken or damaged when connected between the electrodes than the first protrusion. For this reason, the ratio of the first protrusions to the total number of the first protrusions and the second protrusions decreases (for example, less than 70%), and the ratio of the second protrusions decreases. When it increases (for example, 30% or more), the projections do not sufficiently penetrate the oxide film on the surface of the electrode or the conductive particles, and the connection resistance between the electrodes tends to increase. On the other hand, since the ratio of the first protrusions in the total number of the first protrusions and the second protrusions is large, the protrusions form an oxide film on the surface of the electrode or the conductive particles. In order to sufficiently penetrate, the connection resistance between the electrodes can be further reduced.
  • Conductive particles having a plurality of protrusions on the outer surface of the conductive part are known.
  • Japanese Patent Application Laid-Open No. 2012-113850 discloses conductive particles having protrusions made of a particle connected body in which a plurality of metal or alloy particles are connected in a row.
  • conductive particles in which the proportion of the connecting protrusions is 32% or more are shown.
  • the connection resistance between the electrodes may not be sufficiently low.
  • the connection resistance between the electrodes can be sufficiently lowered because there is no connection protrusion or the ratio of the connection protrusion is small.
  • the first protrusion is not formed by connecting a plurality of particles of the metal or metal alloy in a row, and is formed of the metal or metal alloy.
  • the first protrusion is a protrusion other than the particle connected body.
  • the second protrusion is formed of a particle connected body in which a plurality of particles of the metal or metal alloy are connected in a row.
  • the protrusion is formed by both the first protrusion and the second protrusion.
  • the individual particles constituting the second protrusion and the particle connected body are formed of a metal or metal alloy forming a conductive portion.
  • the first protrusion and the second protrusion may have a shape in which protrusions branched into linear portions are mixed. Regarding the number of branches and the form of branching, they may be bifurcated or multi-branched, and may be dendritic.
  • the ratio of the number of the first protrusions to the total number of the first protrusions and the second protrusions of 100% is more preferably 80. % Or more, more preferably 90% or more, particularly preferably 95% or more, and the ratio of the number of the second protrusions is more preferably less than 30%, still more preferably less than 20%, and particularly preferably less than 10%. Most preferably, it is less than 5%.
  • the ratio of the second protrusions in the total number of 100% of the first protrusions and the second protrusions may be 1% or more, and the ratio of the first protrusions is 99%. It may be the following.
  • the first protrusion and the second protrusion are counted as follows.
  • the magnification is set to 25000 times with a scanning electron microscope (SEM), 10 particles are randomly selected, and the protrusions of each particle are observed.
  • SEM scanning electron microscope
  • the metal or metal alloy particles are not formed by connecting a plurality of particles in a row, and the protrusion is formed of a metal or metal alloy, and the metal or metal alloy.
  • the particles are separated into protrusions formed by a particle connected body in which a plurality of particles are connected in a row. Whether or not a plurality of metal or metal alloy particles are connected can be determined by whether or not a grain boundary is observed between the metal or metal alloy particles.
  • the height of the first protrusion is preferably 0.5 times or more the thickness of the portion of the conductive portion where the protrusion is not present. It is more preferably at least twice, more preferably at least 3 times, more preferably at most 10 times, and even more preferably at most 7 times.
  • the height of the first protrusion is an average of the height of the first protrusion per one conductive particle.
  • the width of the first protrusion is preferably 0.1 times or more the thickness of the portion of the conductive part where the protrusion is not provided. It is more preferably 5 times or more, more preferably 1 time or more, further preferably 5 times or less, and more preferably 3 times or less.
  • the width of the first protrusion is the maximum diameter in a direction orthogonal to the height direction of the first protrusion.
  • the height of the second protrusion is preferably 0.5 times or more the thickness of the portion of the conductive portion where the protrusion is absent. It is more preferably at least twice, more preferably at least 3 times, more preferably at most 10 times, and even more preferably at most 7 times.
  • the height of the second protrusion is the average of the height of the second protrusion per conductive particle.
  • the height of the second protrusion is defined in the same manner as the height of the first protrusion. That is, the height of the second projecting portion is on the imaginary line of the conductive portion when it is assumed that there is no second projecting portion on the line connecting the center of the conductive particles and the tip of the second projecting portion ( The distance from the outer surface of the spherical conductive particles (assuming that there is no second protrusion) to the tip of the second protrusion is shown.
  • the tip of the second protrusion is the tip of the protrusion that is farthest from the outer surface of the conductive particles.
  • the width of the second protrusion is preferably 0.1 times or more the thickness of the portion of the conductive portion where the protrusion is not provided. It is more preferably 5 times or more, more preferably 1 time or more, further preferably 5 times or less, and more preferably 3 times or less.
  • the width of the second protrusion is the maximum diameter in a direction orthogonal to the height direction of the second protrusion.
  • the particle diameter of the metal or metal alloy particles constituting the second protrusion is preferably 10 nm or more, more preferably 20 nm or more, preferably 500 nm or less, more preferably 400 nm or less.
  • the particle diameter of the metal or metal alloy particles constituting the second protrusion means the maximum diameter.
  • the first protrusion is a protrusion that is not formed by connecting a plurality of particles of metal or metal alloy in a row, and is observed with a scanning electron microscope (SEM).
  • SEM scanning electron microscope
  • the second protrusion grain boundaries are observed between particles of the metal or metal alloy when observed with a scanning electron microscope (SEM). This fact confirms that the second protrusion is formed by connecting a plurality of particles of the metal or metal alloy. In the first protrusion, no grain boundary is observed in the metal or metal alloy.
  • the first protrusion and the second protrusion are discriminated by a scanning electron microscope (SEM).
  • SEM scanning electron microscope
  • the plurality of the metal or metal alloy particles are connected in a row to form the second protrusion.
  • the second protrusion may be configured by linearly connecting a plurality of particles of the metal or metal alloy, and has a meandering shape by connecting the plurality of particles of the metal or metal alloy.
  • the second protrusion may be formed.
  • the linear part and the meandering part may be mixed.
  • the second protrusion may be branched into a plurality of portions from the base on the conductive portion side to the tip.
  • the second protrusion may be Y-shaped. When attention is paid to one conductive particle, the shapes of the plurality of second protrusions present may be the same or different.
  • the number of particles of the metal or metal alloy may be the same or different.
  • the second protrusion is configured by connecting at least two particles of the metal or metal alloy in a row.
  • the number of connected particles of the metal or metal alloy in the second protrusion is 2 or more, preferably 30 or less, more preferably 20 or less, still more preferably 5 or less, and particularly preferably 3 or less.
  • the number of particles of the metal or metal alloy constituting the second protrusion is measured by observing the second protrusion with a scanning electron microscope (SEM).
  • the total number of the first protrusions and the second protrusions per conductive particle is preferably 5 or more, more preferably 10 or more, more preferably 20 or more, preferably 1000 or less, more preferably 500 or less, and still more preferably 300 or less.
  • Examples of a method for making the first protrusion more easily formed than the second protrusion include a method using a high molecular weight complexing agent and a method using a sulfur-based stabilizer.
  • a high molecular weight complexing agent By using a high molecular weight complexing agent, the size of the complex increases, the complex becomes difficult to enter between the plurality of protrusions, and only the protrusions can be selectively grown.
  • Compression modulus when the conductive particles are compressed 10% (10% K value) is preferably 1000 N / mm 2 or more, more preferably 5000N / mm 2 or more, more preferably 6300N / mm 2 or more, preferably 20000N / Mm 2 or less, more preferably 16000 N / mm 2 or less.
  • 10% K value is not less than the lower limit and not more than the upper limit, the connection resistance between the electrodes is effectively reduced.
  • the compression elastic modulus (10% K value) of the conductive particles can be measured as follows.
  • the conductive particles are compressed under the conditions of a smooth indenter end face of a cylinder (diameter 100 ⁇ m, made of diamond) at 25 ° C., a compression rate of 0.3 mN / second, and a maximum test load of 20 mN.
  • the load value (N) and compression displacement (mm) at this time are measured. From the measured value obtained, the compression elastic modulus can be obtained by the following formula.
  • the micro compression tester for example, “Fischer Scope H-100” manufactured by Fischer is used.
  • the above-mentioned compression elastic modulus universally and quantitatively represents the hardness of the conductive particles.
  • the hardness of the conductive particles can be expressed quantitatively and uniquely.
  • the particle diameter of the conductive particles is preferably 0.5 ⁇ m or more, more preferably 1 ⁇ m or more, preferably 500 ⁇ m or less, more preferably 100 ⁇ m or less, still more preferably 50 ⁇ m or less, particularly preferably 20 ⁇ m or less, and most preferably 10 ⁇ m or less. It is.
  • the particle diameter of the conductive particles is not less than the above lower limit and not more than the above upper limit, the contact area between the conductive particles and the electrode becomes sufficiently large when the electrodes are connected using the conductive particles, and the conductive part When forming the conductive particles, it becomes difficult to form aggregated conductive particles. Further, the distance between the electrodes connected via the conductive particles does not become too large, and the conductive portion is difficult to peel from the surface of the base particle.
  • the particle diameter of the conductive particles indicates a number average particle diameter.
  • the number average particle diameter of the conductive particles is obtained by observing 50 arbitrary conductive particles with an electron microscope or an optical microscope and calculating an average value.
  • FIG. 1 is a cross-sectional view showing conductive particles according to the first embodiment of the present invention.
  • the conductive particle 1 has a base particle 2 and a conductive portion 3 disposed on the surface of the base particle 2.
  • the conductive part 3 covers the surface of the base particle 2.
  • the conductive particle 1 is a coated particle in which the surface of the base particle 2 is coated with the conductive portion 3.
  • the conductive particles 1 have a plurality of protrusions 1a on the conductive surface.
  • the conductive portion 3 has a plurality of protrusions 3a on the outer surface.
  • the conductive portion 3 has a first portion and a second portion that is thicker than the first portion. Accordingly, the conductive portion 3 has a protrusion 3a on the surface (the outer surface of the conductive layer). A portion excluding the plurality of protrusions 1 a and 3 a is the first portion of the conductive portion 3. The plurality of protrusions 1a and 3a are the second portions where the conductive portion 3 is thick.
  • FIG. 2 is a cross-sectional view showing conductive particles according to the second embodiment of the present invention.
  • the conductive portion 3A is a conductive layer. Only the presence or absence of the core substance 4 is different between the conductive particles 1 and the conductive particles 1A.
  • the conductive particles 1A have a core substance.
  • the conductive particle 1 ⁇ / b> A has a plurality of core substances 4 on the surface of the base particle 2.
  • the conductive portion 3 ⁇ / b> A covers the base particle 2 and the core substance 4.
  • the conductive particles 1A have a plurality of protrusions 1Aa on the surface
  • the conductive portion 3A has a plurality of protrusions 3Aa on the outer surface.
  • the surface of the conductive portion 3A is raised by the core substance 4, and a plurality of protrusions 1Aa are formed.
  • a core material may be used to form the protrusions 1Aa and 3Aa like the conductive particles 1A, but it is preferable not to use a core material.
  • FIG. 3 is a cross-sectional view showing conductive particles according to the third embodiment of the present invention.
  • the conductive particle 3 has a base particle 2A, a conductive portion 3B disposed on the surface of the base particle 2A, and an insulating substance 5.
  • the conductive part 3B is a conductive layer.
  • the conductive part 3B has a first conductive part 3Bx disposed on the surface of the base particle 2A and a second conductive part 3By disposed on the surface of the first conductive part 3Bx.
  • the base particle 2A is an organic-inorganic hybrid particle.
  • the base particle 2A has an organic core 2Ax and an inorganic shell 2Ay disposed on the surface of the organic core 2Ax.
  • the conductive particles 1B have protrusions 1Ba on the conductive surface.
  • the conductive particles 1B have protrusions 1Ba on the surface.
  • the conductive portion 3B has a protrusion 3Ba on the surface (the outer surface of the conductive layer).
  • the second conductive portion 3By has a first portion and a second portion that is thicker than the first portion. Accordingly, the second conductive portion 3By has the protrusion 3Bya on the surface (the outer surface of the conductive layer).
  • a portion excluding the plurality of protrusions 3Bya is the first portion of the second conductive portion 3By.
  • the plurality of protrusions 3Bya are the second portions where the thickness of the second conductive portion 3By is thick.
  • the conductive portion 3B may have a multilayer structure. Further, in order to form the protrusions 1Ba and 3Ba, the core material 4 is disposed on the first conductive portion 3Bx of the inner layer, and the core material 4 and the first conductive portion 3Bx are separated by the second conductive portion 3By of the outer layer. It may be coated.
  • the conductive particle 1B includes an insulating material 5 disposed on the outer surfaces of the conductive portion 3B and the second conductive portion 3By. At least a part of the outer surface of the conductive portion 3B and the second conductive portion 3By is covered with the insulating material 5.
  • the insulating substance 5 is made of an insulating material and is an insulating particle.
  • the electroconductive particle which concerns on this invention may have the insulating substance arrange
  • the conductive portions 3, 3 ⁇ / b> A, 3 ⁇ / b> By have a crystal structure, the conductive portions 3, 3 ⁇ / b> A, 3 ⁇ / b> By have protrusions 3 a, 3 Aa, 3 Bya and protrusions 3 a, 3 Aa, 3 Bya.
  • the crystal structure is continuous with the part where there is no.
  • the crystallite size in the conductive portions 3, 3A, 3By is preferably 0.1 nm or more, and preferably 100 nm or less.
  • the substrate particles include resin particles, inorganic particles excluding metal particles, organic-inorganic hybrid particles, and metal particles.
  • the substrate particles are preferably substrate particles excluding metal particles, and more preferably resin particles, inorganic particles excluding metal particles, or organic-inorganic hybrid particles.
  • the base particles may be core-shell particles.
  • the base material particles are more preferably resin particles or organic-inorganic hybrid particles, and may be resin particles or organic-inorganic hybrid particles. By using these preferable base particles, conductive particles more suitable for electrical connection between the electrodes can be obtained.
  • the conductive particles When connecting the electrodes using the conductive particles, the conductive particles are compressed by placing the conductive particles between the electrodes and then pressing them.
  • the substrate particles are resin particles or organic-inorganic hybrid particles, the conductive particles are easily deformed during the pressure bonding, and the contact area between the conductive particles and the electrode is increased. For this reason, the connection resistance between electrodes becomes still lower.
  • the resin for forming the resin particles include polyolefin resins such as polyethylene, polypropylene, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyisobutylene, and polybutadiene; acrylic resins such as polymethyl methacrylate and polymethyl acrylate; Alkylene terephthalate, polycarbonate, polyamide, phenol formaldehyde resin, melamine formaldehyde resin, benzoguanamine formaldehyde resin, urea formaldehyde resin, phenol resin, melamine resin, benzoguanamine resin, urea resin, epoxy resin, unsaturated polyester resin, saturated polyester resin, polysulfone, polyphenylene Oxide, polyacetal, polyimide, polyamideimide, polyether ether Tons, polyethersulfone, and polymers such as obtained by a variety of polymerizable monomer having an ethylene
  • Resin for forming the resin particles can be designed and synthesized, and the hardness of the base particles can be easily controlled within a suitable range, which is suitable for conductive materials and having physical properties at the time of compression.
  • the monomer having the ethylenically unsaturated group may be a non-crosslinkable monomer or a crosslinkable monomer. And a polymer.
  • non-crosslinkable monomer examples include styrene monomers such as styrene and ⁇ -methylstyrene; carboxyl group-containing monomers such as (meth) acrylic acid, maleic acid, and maleic anhydride; (Meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, lauryl (meth) acrylate, cetyl (meth) acrylate, stearyl (meth) acrylate, cyclohexyl ( Alkyl (meth) acrylates such as meth) acrylate and isobornyl (meth) acrylate; acids such as 2-hydroxyethyl (meth) acrylate, glycerol (meth) acrylate, polyoxyethylene (meth) acrylate and glycidyl (meth) acrylate Atom
  • crosslinkable monomer examples include tetramethylolmethane tetra (meth) acrylate, tetramethylolmethane tri (meth) acrylate, tetramethylolmethane di (meth) acrylate, trimethylolpropane tri (meth) acrylate, and dipenta Erythritol hexa (meth) acrylate, dipentaerythritol penta (meth) acrylate, glycerol tri (meth) acrylate, glycerol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) Polyfunctional (meth) acrylates such as acrylate, (poly) tetramethylene glycol di (meth) acrylate, 1,4-butanediol di (meth) acrylate; triallyl (iso) cyanure And silane
  • the resin particles can be obtained by polymerizing the polymerizable monomer having an ethylenically unsaturated group by a known method. Examples of this method include a method of suspension polymerization in the presence of a radical polymerization initiator, and a method of polymerizing by swelling a monomer together with a radical polymerization initiator using non-crosslinked seed particles.
  • the substrate particles are inorganic particles or organic-inorganic hybrid particles excluding metal particles
  • examples of the inorganic material for forming the substrate particles include silica, alumina, barium titanate, zirconia, and carbon black.
  • the inorganic substance is preferably not a metal.
  • the particles formed by the silica are not particularly limited. For example, after forming a crosslinked polymer particle by hydrolyzing a silicon compound having two or more hydrolyzable alkoxysilyl groups, firing may be performed as necessary. The particle
  • examples of the organic / inorganic hybrid particles include organic / inorganic hybrid particles formed of a crosslinked alkoxysilyl polymer and an acrylic resin.
  • the organic-inorganic hybrid particles are preferably core-shell type organic-inorganic hybrid particles having a core and a shell disposed on the surface of the core.
  • the core is preferably an organic core.
  • the shell is preferably an inorganic shell.
  • the base material particles are preferably organic-inorganic hybrid particles having an organic core and an inorganic shell disposed on the surface of the organic core.
  • Examples of the material for forming the organic core include the resin for forming the resin particles described above.
  • Examples of the material for forming the inorganic shell include inorganic substances for forming the above-described base material particles.
  • the material for forming the inorganic shell is preferably silica.
  • the inorganic shell is preferably formed on the surface of the core by forming a metal alkoxide into a shell-like material by a sol-gel method and then firing the shell-like material.
  • the metal alkoxide is preferably a silane alkoxide.
  • the inorganic shell is preferably formed of a silane alkoxide.
  • the substrate particles are metal particles
  • examples of the metal for forming the metal particles include silver, copper, nickel, silicon, gold, and titanium.
  • the substrate particles are preferably not metal particles.
  • the particle diameter of the substrate particles is preferably 0.1 ⁇ m or more, more preferably 0.5 ⁇ m or more, further preferably 2 ⁇ m or more, preferably 30 ⁇ m or less, more preferably 10 ⁇ m or less.
  • the particle diameter of the substrate particles may be 5 ⁇ m or less, or 3 ⁇ m or less.
  • the particle diameter of the substrate particles indicates a diameter when the substrate particles are spherical, and indicates a maximum diameter when the substrate particles are not spherical.
  • the thickness of the conductive part without the protrusion is preferably 0.005 ⁇ m or more, more preferably 0.01 ⁇ m or more, preferably 1 ⁇ m or less, more preferably 0.3 ⁇ m or less.
  • the thickness of the portion without the protrusion of the conductive portion is not less than the above lower limit and not more than the above upper limit, sufficient conductivity can be obtained, and the conductive particles do not become too hard and are electrically conductive during connection between the electrodes. The particles are sufficiently deformed.
  • the thickness of the portion of the outermost conductive layer where the protrusions are not present is preferably 0.005, particularly when the outermost layer is a gold layer. It is 001 ⁇ m or more, more preferably 0.01 ⁇ m or more, preferably 0.5 ⁇ m or less, more preferably 0.1 ⁇ m or less.
  • the thickness of the portion of the outermost conductive layer where the protrusion is not present is not less than the lower limit and not more than the upper limit, the coating with the outermost conductive layer becomes uniform, corrosion resistance is sufficiently high, and the distance between the electrodes The connection resistance is sufficiently low.
  • the thickness of the conductive part without the protrusion can be measured by observing a cross section of the conductive particle using, for example, a transmission electron microscope (TEM).
  • TEM transmission electron microscope
  • Examples of the method for forming the conductive part on the surface of the substrate particle include a method for forming the conductive part by electroless plating and a method for forming the conductive part by electroplating.
  • the conductive part preferably contains a metal.
  • the metal that is the material of the conductive part is not particularly limited. Examples of the metal include gold, silver, copper, platinum, palladium, zinc, lead, aluminum, cobalt, indium, nickel, chromium, titanium, antimony, bismuth, germanium and cadmium, and alloys thereof. Further, tin-doped indium oxide (ITO) may be used as the metal. These metals may be alloyed in the conductive part. However, an appropriate metal is selected so that the degree of crystallinity in the conductive portion is not less than the above lower limit and not more than the above upper limit. As for the said metal, only 1 type may be used and 2 or more types may be used together.
  • the conductive part preferably contains copper or nickel, and contains nickel. Is preferred.
  • a metal such as nickel may be alloyed with another metal.
  • the material of the conductive part is preferably copper, copper alloy, nickel or nickel alloy, and more preferably nickel or nickel alloy.
  • the content of copper or nickel is preferably 10% by weight or more, more preferably 25% by weight or more, still more preferably 40% by weight or more, preferably 100% by weight. % (Total amount) or less. It is preferable that the content of nickel in the conductive part is not less than the above lower limit and not more than the above upper limit.
  • the conductive part preferably contains nickel as a main metal.
  • the content of nickel is preferably 50% by weight or more in 100% by weight of the entire conductive part including nickel.
  • the content of nickel is preferably 65% by weight or more, more preferably 80% by weight or more, and further preferably 90% by weight or more.
  • the connection resistance between the electrodes is further reduced.
  • the conductive portion containing nickel preferably contains phosphorus or boron, and more preferably contains phosphorus.
  • the content of phosphorus is preferably more than 0% by weight, more preferably 0.1% by weight or more, still more preferably 2% by weight or more, particularly preferably 5% by weight or more, in 100% by weight of the entire conductive part including nickel. Most preferably it exceeds 10% by weight, preferably 20% by weight or less, more preferably 15% by weight or less.
  • the connection resistance is further lowered.
  • the phosphorus content is 5% by weight or more, the reliability of the connection resistance is further increased, and when the phosphorus content exceeds 10% by weight, the adhesion is improved and the reliability of the connection resistance is improved. It gets even higher.
  • a method for controlling the content of nickel, boron and phosphorus in the conductive part for example, when forming the conductive part by electroless nickel plating, a method for controlling the pH of the nickel plating solution, conductive by electroless nickel plating.
  • a method for adjusting the concentration of a boron-containing reducing agent when forming a part, a method for adjusting the concentration of a phosphorus-containing reducing agent when forming a conductive part by electroless nickel plating, and a nickel concentration in a nickel plating solution The method etc. of adjusting are mentioned.
  • a catalytic step and an electroless plating step are performed.
  • an example of a method for forming an alloy plating layer containing nickel and phosphorus on the surface of resin particles by electroless plating will be described.
  • a catalyst serving as a starting point for forming a plating layer by electroless plating is formed on the surface of the resin particles.
  • the surface of the resin particles is activated with an acid solution or an alkali solution
  • the reducing agent a phosphorus-containing reducing agent is preferably used.
  • a conductive layer containing boron can be formed by using a boron-containing reducing agent as the reducing agent.
  • a nickel plating bath containing a nickel-containing compound and the phosphorus-containing reducing agent is preferably used.
  • nickel By immersing the resin particles in the nickel plating bath, nickel can be deposited on the surface of the resin particles on which the catalyst is formed, and a conductive layer containing nickel and phosphorus can be formed.
  • nickel-containing compound examples include nickel sulfate and nickel chloride.
  • the nickel-containing compound is preferably a nickel salt.
  • Examples of the phosphorus-containing reducing agent include sodium hypophosphite.
  • Examples of the boron-containing reducing agent include dimethylamine borane, sodium borohydride, and potassium borohydride.
  • the core material Since the core substance is embedded in the conductive portion, it is easy for the conductive portion to have a plurality of protrusions on the outer surface. However, in order to form protrusions on the surfaces of the conductive particles and the conductive part, the core material is not necessarily used, and it is preferable not to use the core material. It is preferable that the conductive particles do not have a core substance for raising the outer surface of the conductive part inside and inside the conductive part. It is preferable that the conductive part does not include a core material for raising the outer surface of the conductive part inside and inside the conductive part. It is preferable that a conductive part having protrusions on the outer surface is formed on the surface of the spherical base particle without using a core substance.
  • a method for forming protrusions on the surface of the conductive particles a method of forming a conductive portion by electroless plating after attaching a core substance to the surface of the base particles, and electroless plating on the surface of the base particles Examples include a method of forming a conductive part by, attaching a core substance, and further forming a conductive part by electroless plating.
  • a first conductive part is formed on the surface of the base particle, and then a core substance is disposed on the first conductive part, and then the second conductive part.
  • a method of adding a core substance in the middle of forming a conductive part on the surface of the base particle a method of adding a core substance in the middle of forming a conductive part on the surface of the base particle.
  • the core substance is added to the dispersion of the base particle, and the core substance is applied to the surface of the base particle, for example, van der Waals force.
  • the method of making a core substance accumulate and adhere on the surface of the base particle in a dispersion liquid is preferable.
  • the material of the core substance includes a conductive substance and a non-conductive substance.
  • the conductive material include conductive non-metals such as metals, metal oxides, and graphite, and conductive polymers.
  • the conductive polymer include polyacetylene.
  • the nonconductive material include silica, alumina, and zirconia.
  • the core substance is hard.
  • the core substance is preferably metal particles. As the metal that is the material of the core substance, the metals mentioned as the material of the conductive material can be used as appropriate.
  • the core material include barium titanate (Mohs hardness 4.5), nickel (Mohs hardness 5), silica (silicon dioxide, Mohs hardness 6-7), titanium oxide (Mohs hardness 7), zirconia. (Mohs hardness 8-9), alumina (Mohs hardness 9), tungsten carbide (Mohs hardness 9), diamond (Mohs hardness 10), and the like.
  • the inorganic particles are preferably nickel, silica, titanium oxide, zirconia, alumina, tungsten carbide or diamond, more preferably silica, titanium oxide, zirconia, alumina, tungsten carbide or diamond, titanium oxide, zirconia.
  • Alumina, tungsten carbide or diamond is more preferable, and zirconia, alumina, tungsten carbide or diamond is particularly preferable.
  • the Mohs hardness of the core material is preferably 5 or more, more preferably 6 or more, still more preferably 7 or more, and particularly preferably 7.5 or more.
  • the shape of the core substance is not particularly limited.
  • the shape of the core substance is preferably a lump.
  • Examples of the core substance include a particulate lump, an agglomerate in which a plurality of fine particles are aggregated, and an irregular lump.
  • the metal examples include gold, silver, copper, platinum, zinc, iron, lead, tin, aluminum, cobalt, indium, nickel, chromium, titanium, antimony, bismuth, germanium and cadmium, and tin-lead.
  • examples thereof include alloys composed of two or more metals such as alloys, tin-copper alloys, tin-silver alloys, tin-lead-silver alloys, and tungsten carbide. Of these, nickel, copper, silver or gold is preferable.
  • the metal for forming the core substance may be the same as or different from the metal for forming the conductive part.
  • the metal for forming the core substance preferably includes a metal for forming the conductive part.
  • the metal for forming the core substance preferably contains nickel.
  • the metal for forming the core substance preferably contains nickel.
  • the shape of the core substance is not particularly limited.
  • the shape of the core substance is preferably a lump.
  • Examples of the core substance include a particulate lump, an agglomerate in which a plurality of fine particles are aggregated, and an irregular lump.
  • the average diameter (average particle diameter) of the core substance is preferably 0.001 ⁇ m or more, more preferably 0.05 ⁇ m or more, preferably 0.9 ⁇ m or less, more preferably 0.2 ⁇ m or less.
  • the connection resistance between the electrodes is effectively reduced.
  • the “average diameter (average particle diameter)” of the core substance indicates a number average diameter (number average particle diameter).
  • the average diameter of the core material is obtained by observing 50 arbitrary core materials with an electron microscope or an optical microscope and calculating an average value.
  • the electroconductive particle which concerns on this invention is equipped with the insulating substance arrange
  • the insulating substance arrange
  • an insulating material is present between the plurality of electrodes, so that it is possible to prevent a short circuit between electrodes adjacent in the lateral direction instead of between the upper and lower electrodes.
  • the insulating material between the conductive portion of the conductive particles and the electrode can be easily removed by pressurizing the conductive particles with the two electrodes when connecting the electrodes. Since the conductive portion has a plurality of protrusions on the outer surface, the insulating material between the conductive portion of the conductive particles and the electrode can be easily excluded.
  • the insulating substance is preferably an insulating particle because the insulating substance can be more easily removed during crimping between the electrodes.
  • thermoplastic resin examples include vinyl polymers and vinyl copolymers.
  • thermosetting resin an epoxy resin, a phenol resin, a melamine resin, etc.
  • water-soluble resin examples include polyvinyl alcohol, polyacrylic acid, polyacrylamide, polyvinyl pyrrolidone, polyethylene oxide, and methyl cellulose. Of these, water-soluble resins are preferable, and polyvinyl alcohol is more preferable.
  • a method of disposing an insulating substance on the surface of the conductive part there are a chemical method, a physical or mechanical method, and the like.
  • the chemical method include an interfacial polymerization method, a suspension polymerization method in the presence of particles, and an emulsion polymerization method.
  • the physical or mechanical method include spray drying, hybridization, electrostatic adhesion, spraying, dipping, and vacuum deposition.
  • a method in which the insulating substance is disposed on the surface of the conductive portion via a chemical bond is preferable.
  • the outer surface of the conductive part and the surface of the insulating particles may each be coated with a compound having a reactive functional group.
  • the outer surface of the conductive part and the surface of the insulating particles may not be directly chemically bonded, but may be indirectly chemically bonded by a compound having a reactive functional group.
  • the carboxyl group may be chemically bonded to a functional group on the surface of the insulating particle through a polymer electrolyte such as polyethyleneimine.
  • the average diameter (average particle diameter) of the insulating material can be appropriately selected depending on the particle diameter of the conductive particles, the use of the conductive particles, and the like.
  • the average diameter (average particle diameter) of the insulating material is preferably 0.005 ⁇ m or more, more preferably 0.01 ⁇ m or more, preferably 1 ⁇ m or less, more preferably 0.5 ⁇ m or less.
  • the average diameter of the insulating material is equal to or more than the above lower limit, when the conductive particles are dispersed in the binder resin, the conductive portions in the plurality of conductive particles are difficult to contact each other.
  • the average diameter of the insulating particles is not more than the above upper limit, it is not necessary to make the pressure too high in order to eliminate the insulating material between the electrodes and the conductive particles when the electrodes are connected, There is no need for heating.
  • the “average diameter (average particle diameter)” of the insulating material indicates a number average diameter (number average particle diameter).
  • the average diameter of the insulating material is determined using a particle size distribution measuring device or the like.
  • the conductive material according to the present invention includes the conductive particles described above and a binder resin.
  • the conductive particles are preferably used by being dispersed in a binder resin, and are preferably used as a conductive material by being dispersed in a binder resin.
  • the conductive material is preferably an anisotropic conductive material.
  • the conductive material is preferably used for electrical connection between electrodes.
  • the conductive material is preferably a circuit connection material.
  • the binder resin is not particularly limited.
  • As the binder resin a known insulating resin is used.
  • binder resin examples include vinyl resins, thermoplastic resins, curable resins, thermoplastic block copolymers, and elastomers.
  • vinyl resins examples include vinyl resins, thermoplastic resins, curable resins, thermoplastic block copolymers, and elastomers.
  • the said binder resin only 1 type may be used and 2 or more types may be used together.
  • Examples of the vinyl resin include vinyl acetate resin, acrylic resin, and styrene resin.
  • examples of the thermoplastic resin include polyolefin resin, ethylene-vinyl acetate copolymer, and polyamide resin.
  • examples of the curable resin include an epoxy resin, a urethane resin, a polyimide resin, and an unsaturated polyester resin.
  • the curable resin may be a room temperature curable resin, a thermosetting resin, a photocurable resin, or a moisture curable resin.
  • the curable resin may be used in combination with a curing agent.
  • thermoplastic block copolymer examples include a styrene-butadiene-styrene block copolymer, a styrene-isoprene-styrene block copolymer, a hydrogenated product of a styrene-butadiene-styrene block copolymer, and a styrene-isoprene. -Hydrogenated products of styrene block copolymers.
  • the elastomer examples include styrene-butadiene copolymer rubber and acrylonitrile-styrene block copolymer rubber.
  • the conductive material includes, for example, a filler, an extender, a softener, a plasticizer, a polymerization catalyst, a curing catalyst, a colorant, an antioxidant, a heat stabilizer, and a light stabilizer.
  • a filler for example, a filler, an extender, a softener, a plasticizer, a polymerization catalyst, a curing catalyst, a colorant, an antioxidant, a heat stabilizer, and a light stabilizer.
  • Various additives such as an agent, an ultraviolet absorber, a lubricant, an antistatic agent and a flame retardant may be contained.
  • the conductive material according to the present invention can be used as a conductive paste and a conductive film.
  • the conductive material according to the present invention is a conductive film
  • a film that does not include conductive particles may be laminated on a conductive film that includes conductive particles.
  • the conductive paste is preferably an anisotropic conductive paste.
  • the conductive film is preferably an anisotropic conductive film.
  • the content of the binder resin is preferably 10% by weight or more, more preferably 30% by weight or more, still more preferably 50% by weight or more, particularly preferably 70% by weight or more, preferably 99.% or more. It is 99 weight% or less, More preferably, it is 99.9 weight% or less.
  • the content of the binder resin is not less than the above lower limit and not more than the above upper limit, the conductive particles are efficiently arranged between the electrodes, and the connection reliability of the connection target member connected by the conductive material is further increased.
  • the content of the conductive particles is preferably 0.01% by weight or more, more preferably 0.1% by weight or more, preferably 40% by weight or less, more preferably 20% by weight or less, More preferably, it is 10 weight% or less.
  • the content of the conductive particles is not less than the above lower limit and not more than the above upper limit, the conduction reliability between the electrodes is further enhanced.
  • connection structure can be obtained by connecting the connection object members using the conductive particles or using a conductive material containing the conductive particles and a binder resin.
  • connection structure includes a first connection target member, a second connection target member, and a connection portion connecting the first and second connection target members, and the connection portion has the above-described conductivity.
  • the connection structure is preferably formed of particles or formed of a conductive material containing the above-described conductive particles and a binder resin. In the case where conductive particles are used, the connection portion itself is conductive particles. That is, the first and second connection target members are connected by the conductive particles.
  • FIG. 4 is a cross-sectional view schematically showing a connection structure using conductive particles according to the first embodiment of the present invention.
  • connection portion 54 includes a first connection target member 52, a second connection target member 53, and a connection portion 54 that connects the first and second connection target members 52 and 53.
  • the connection portion 54 is formed by curing a conductive material including the conductive particles 1.
  • the connection part 54 includes the conductive particles 1 and the binder resin 54a.
  • the conductive particles 1 are schematically shown for convenience of illustration. Instead of the conductive particles 1, conductive particles 1A, 1B, etc. may be used.
  • the first connection target member 52 has a plurality of first electrodes 52a on the surface (upper surface).
  • the second connection target member 53 has a plurality of second electrodes 53a on the surface (lower surface).
  • the first electrode 52 a and the second electrode 53 a are electrically connected by one or a plurality of conductive particles 1. Therefore, the first and second connection target members 52 and 53 are electrically connected by the conductive particles 1.
  • the manufacturing method of the connection structure is not particularly limited.
  • the conductive material is disposed between the first connection target member and the second connection target member to obtain a laminate, and then the laminate is heated and pressurized. Methods and the like.
  • the pressurizing pressure is about 9.8 ⁇ 10 4 to 4.9 ⁇ 10 6 Pa.
  • the heating temperature is about 120 to 220 ° C.
  • the pressure applied to connect the electrode of the flexible printed board, the electrode disposed on the resin film, and the electrode of the touch panel is about 9.8 ⁇ 10 4 to 1.0 ⁇ 10 6 Pa.
  • connection target member examples include electronic components such as semiconductor chips, capacitors, and diodes, and electronic components such as printed boards, flexible printed boards, glass epoxy boards, and glass boards.
  • the connection target member is preferably an electronic component.
  • the conductive particles are preferably used for electrical connection of electrodes in an electronic component.
  • the electrode provided on the connection target member examples include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a silver electrode, a molybdenum electrode, and a tungsten electrode.
  • the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, or a copper electrode.
  • the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, or a tungsten electrode.
  • the electrode formed only with aluminum may be sufficient and the electrode by which the aluminum layer was laminated
  • the material for the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element.
  • the trivalent metal element include Sn, Al, and Ga.
  • Example 1 Production of Conductive Particles As substrate particles A, divinylbenzene copolymer resin particles (“Micropearl SP-203” manufactured by Sekisui Chemical Co., Ltd.) having a particle size of 3.0 ⁇ m were prepared.
  • divinylbenzene copolymer resin particles (“Micropearl SP-203” manufactured by Sekisui Chemical Co., Ltd.) having a particle size of 3.0 ⁇ m were prepared.
  • the resin particles were taken out by dispersing 10 parts by weight of the resin particles in 100 parts by weight of an alkaline solution containing 5% by weight of a palladium catalyst solution using an ultrasonic disperser, and then filtering the solution. Next, the resin particles were added to 100 parts by weight of a 1% by weight dimethylamine borane solution to activate the surface of the resin particles. The resin particles whose surface was activated were sufficiently washed with water, and then added to 500 parts by weight of distilled water and dispersed to obtain a suspension.
  • the suspension was put into a solution of nickel sulfate 0.09 mol / L, thallium nitrate 30 ppm and bismuth nitrate 20 ppm to obtain a particle mixture (A).
  • nickel plating containing nickel sulfate 0.23 mol / L, dimethylamine borane 0.92 mol / L, sodium citrate 0.25 mol / L, sodium tungstate 0.05 mol / L, thallium nitrate 140 ppm, and bismuth nitrate 30 ppm Liquid (B) (pH 8.0) was prepared.
  • the nickel plating solution (B) was gradually added dropwise to the dispersed particle mixture (A) adjusted to 40 ° C. to perform electroless nickel plating.
  • the dropping rate of the nickel plating solution (B) was set to 10 ml / min. During the dropping of the nickel plating solution (B), nickel plating was performed while dispersing the generated Ni protrusion nuclei by ultrasonic stirring.
  • the suspension is filtered to remove the particles, washed with water, and dried to place a nickel-boron conductive layer (thickness 0.1 ⁇ m) on the surface of the resin particles, and the outer surface has protrusions. Conductive particles as a conductive layer were obtained.
  • anisotropic conductive material 7 parts by weight of the obtained conductive particles, 25 parts by weight of bisphenol A type phenoxy resin, 4 parts by weight of fluorene type epoxy resin, 30 parts by weight of phenol novolac type epoxy resin, SI-60L (manufactured by Sanshin Chemical Industry Co., Ltd.) was blended and defoamed and stirred for 3 minutes to obtain an anisotropic conductive paste.
  • a transparent glass substrate having an IZO electrode pattern (first electrode, metal Vickers hardness of 100 Hv on the electrode surface) having an L / S of 10 ⁇ m / 20 ⁇ m was prepared. Further, a semiconductor chip was prepared in which an Au electrode pattern (second electrode, metal Vickers hardness of 50 Hv on the electrode surface) having L / S of 10 ⁇ m / 20 ⁇ m was formed on the lower surface.
  • Example 2 Conductive particles were produced in the same manner as in Example 1 except that the nickel sulfate concentration in the nickel plating solution (B) was changed from 0.23 mol / L to 0.46 mol / L. In this way, a nickel-boron conductive layer (thickness 0.2 ⁇ m) was arranged on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained.
  • An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
  • Example 3 Conductive particles were produced in the same manner as in Example 1 except that the pH of the nickel plating solution (B) was changed from 8.0 to 6.0. In this way, a nickel-boron conductive layer (thickness: 0.1 ⁇ m) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
  • Example 4 Conductive particles were produced in the same manner as in Example 1 except that the dropping rate of the nickel plating solution (B) was changed to 1/2. In this way, a nickel-boron conductive layer (thickness: 0.1 ⁇ m) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
  • Example 5 Conductive particles were produced in the same manner as in Example 1 except that 140 ppm of thallium nitrate in the nickel plating solution (B) was changed to 200 ppm of vanadium dioxide. In this way, a nickel-boron conductive layer (thickness: 0.1 ⁇ m) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
  • Example 6 After dispersing 10 parts by weight of the resin particles in 100 parts by weight of an alkaline solution containing 5% by weight of a palladium catalyst solution using an ultrasonic disperser, the resin particles were taken out by filtering the solution. Next, the resin particles were added to 100 parts by weight of a 1% by weight dimethylamine borane solution to activate the surface of the resin particles. The resin particles whose surface was activated were sufficiently washed with water, and then added to 500 parts by weight of distilled water and dispersed to obtain a suspension.
  • the suspension was put into a solution of nickel sulfate 0.09 mol / L, thallium nitrate 30 ppm and bismuth nitrate 20 ppm to obtain a particle mixture (A).
  • a plating solution for forming a protrusion (C) (pH 10.0) containing dimethylamine borane 2.0 mol / L and sodium hydroxide 0.05 mol / L was prepared.
  • the nickel plating solution (B) was gradually added dropwise to the dispersed particle mixture (A) adjusted to 40 ° C. to perform electroless nickel plating.
  • the dropping rate of the nickel plating solution (B) was set to 10 ml / min.
  • nickel plating was performed while dispersing the generated Ni protrusion nuclei by ultrasonic stirring.
  • the protrusion forming plating solution (C) was gradually dropped to form protrusions.
  • the dropping rate of the projection forming plating solution (C) was set to 2 ml / min.
  • nickel plating was performed while dispersing the generated Ni projection nuclei by ultrasonic stirring.
  • the suspension is filtered to remove the particles, washed with water, and dried to place a nickel-boron conductive layer (thickness 0.1 ⁇ m) on the surface of the resin particles, and the outer surface has protrusions.
  • Conductive particles as a conductive layer were obtained.
  • An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
  • Example 7 Conductive particles were obtained in the same manner as in Example 6, except that only the particle diameter was different from that of the substrate particle A and the particle diameter was changed to the substrate particle B of 2.5 ⁇ m. In this way, a nickel-boron conductive layer (thickness: 0.1 ⁇ m) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
  • Example 8 Conductive particles were obtained in the same manner as in Example 6 except that only the particle diameter was different from that of the substrate particle A and the particle diameter was changed to the substrate particle C of 10.0 ⁇ m. In this way, a nickel-boron conductive layer (thickness: 0.1 ⁇ m) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
  • Example 9 The surface of divinylbenzene copolymer resin particles having a particle diameter of 2.0 ⁇ m (“Micropearl SP-202” manufactured by Sekisui Chemical Co., Ltd.) was coated with a silica shell (thickness 250 nm) using a condensation reaction by a sol-gel reaction. Core-shell type organic-inorganic hybrid particles (base material particles D) were obtained. Except having changed the said base material particle A into the said base material particle D, it carried out similarly to Example 6, and obtained electroconductive particle. In this way, a nickel-boron conductive layer (thickness: 0.1 ⁇ m) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
  • Example 10 In a 500 mL reaction vessel equipped with a stirrer and a thermometer, 300 g of a 0.13% by weight aqueous ammonia solution was placed. Next, 4.1 g of methyltrimethoxysilane, 19.2 g of vinyltrimethoxysilane, and 0.7 g of silicone alkoxy oligomer (“X-41-1053” manufactured by Shin-Etsu Chemical Co., Ltd.) in an aqueous ammonia solution in the reaction vessel. The mixture with was added slowly.
  • a nickel-boron conductive layer (thickness: 0.1 ⁇ m) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained.
  • An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
  • Example 11 To a 1000 mL separable flask equipped with a four-neck separable cover, stirring blade, three-way cock, condenser and temperature probe, 100 mmol of methyl methacrylate and N, N, N-trimethyl-N-2-methacryloyloxyethyl A monomer composition containing 1 mmol of ammonium chloride and 1 mmol of 2,2′-azobis (2-amidinopropane) dihydrochloride was weighed in ion-exchanged water so that the solid content was 5% by weight, and then at 200 rpm. The mixture was stirred and polymerized at 70 ° C. for 24 hours under a nitrogen atmosphere. After completion of the reaction, it was freeze-dried to obtain insulating particles having an ammonium group on the surface, an average particle size of 220 nm, and a CV value of 10%.
  • the insulating particles were dispersed in ion exchange water under ultrasonic irradiation to obtain a 10 wt% aqueous dispersion of insulating particles.
  • Example 6 10 g of the conductive particles obtained in Example 6 were dispersed in 500 mL of ion-exchanged water, 4 g of an aqueous dispersion of insulating particles was added, and the mixture was stirred at room temperature for 6 hours. After filtration through a 3 ⁇ m mesh filter, the particles were further washed with methanol and dried to obtain conductive particles having insulating particles attached thereto.
  • An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
  • Example 12 Conductive particles were prepared in the same manner as in Example 6 except that sodium citrate 0.25 mol / L in the nickel plating solution (B) was changed to disodium malonate 0.5 mol / L. In this way, a nickel-boron conductive layer (thickness: 0.1 ⁇ m) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
  • Example 13 Conductive particles were produced in the same manner as in Example 6 except that sodium citrate 0.25 mol / L in the nickel plating solution (B) was changed to sodium propionate 1.0 mol / L. In this way, a nickel-boron conductive layer (thickness: 0.1 ⁇ m) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
  • Example 2 Conductive particles were produced in the same manner as in Example 6 except that the protrusion forming plating solution (C) was dropped without performing ultrasonic stirring. In this way, a nickel-boron conductive layer (thickness: 0.1 ⁇ m) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
  • protrusions on the outer surface of the part changing dimethylamine borane 0.92 mol / L in the nickel plating solution (B) to 1.38 mol / L sodium hypophosphite, and a plating solution for forming the protrusions (C) Except for changing 2.0 mol / L of dimethylamine borane to 2.18 mol / L of sodium hypophosphite, the conductive layer is formed in the same manner as in Example 6, and the outer surface has protrusions. Conductive conductive particles as a conductive layer were produced.
  • a nickel-phosphorus conductive layer (thickness 0.1 ⁇ m) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained.
  • An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
  • a nickel-phosphorus conductive layer (thickness 0.1 ⁇ m) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained.
  • An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
  • the height of the protrusion was 1/15 or more and 1/6 or less of the particle diameter of the conductive particles.
  • Compressive elastic modulus of conductive particles (10% K value)
  • the 10% K value of the conductive particles was measured using a micro-compression tester (“Fischer Scope H-100” manufactured by Fischer) according to the method described above under the condition of 23 ° C.
  • connection resistance is 2.0 ⁇ or less
  • Connection resistance is over 2.0 ⁇ , 3.0 ⁇ or less
  • Connection resistance is over 3.0 ⁇
  • Connection resistance is 5.0 ⁇
  • Connection resistance exceeds 10 ⁇

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Abstract

Provided are conductive particles capable of lowering the connection resistance when electrodes are electrically connected therebetween. Each conductive particle (1) is provided with a base particle (2), and a conducting portion (3) disposed on the surface of the base particle (2), the conducting portion (3) having a plurality of protrusions (3a) on the external surface, the conducting portion (3) having a crystal structure, and the crystal structure being continuous between a portion where the protrusion (3a) is present and a portion where the protrusion (3a) is not present in the conducting portion (3).

Description

導電性粒子、導電材料及び接続構造体Conductive particles, conductive materials, and connection structures
 本発明は、基材粒子と、該基材粒子の表面上に配置された導電部とを備え、かつ上記導電部が外表面に複数の突起を有する導電性粒子に関する。また、本発明は、上記導電性粒子を用いた導電材料及び接続構造体に関する。 The present invention relates to conductive particles comprising base particles and conductive portions arranged on the surface of the base particles, and the conductive portions having a plurality of protrusions on the outer surface. The present invention also relates to a conductive material and a connection structure using the conductive particles.
 異方性導電ペースト及び異方性導電フィルム等の異方性導電材料が広く知られている。上記異方性導電材料では、バインダー樹脂中に導電性粒子が分散されている。 Anisotropic conductive materials such as anisotropic conductive paste and anisotropic conductive film are widely known. In the anisotropic conductive material, conductive particles are dispersed in a binder resin.
 上記異方性導電材料は、各種の接続構造体を得るために、例えば、フレキシブルプリント基板とガラス基板との接続(FOG(Film on Glass))、半導体チップとフレキシブルプリント基板との接続(COF(Chip on Film))、半導体チップとガラス基板との接続(COG(Chip on Glass))、並びにフレキシブルプリント基板とガラスエポキシ基板との接続(FOB(Film on Board))等に使用されている。また、上記導電性粒子として、基材粒子と、該基材粒子の表面上に配置された導電部とを有する導電性粒子が用いられることがある。 In order to obtain various connection structures, for example, the anisotropic conductive material may be connected between a flexible printed circuit board and a glass substrate (FOG (Film on Glass)), or connected between a semiconductor chip and a flexible printed circuit board (COF ( (Chip on Film)), connection between a semiconductor chip and a glass substrate (COG (Chip on Glass)), connection between a flexible printed circuit board and a glass epoxy substrate (FOB (Film on Board)), and the like. In addition, as the conductive particles, conductive particles having base particles and conductive portions arranged on the surfaces of the base particles may be used.
 上記導電性粒子の一例として、下記の特許文献1には、芯材粒子(基材粒子)と、該芯材粒子の表面に、金属又は合金の皮膜とを有する導電性粒子が開示されている。この導電性粒子は、上記皮膜の表面から突出した複数の突起部を有する。上記突起部は、金属又は合金の複数の粒子が列状に連結した粒子連結体から構成されている。特許文献1の実施例及び比較例では、連結突起部の割合が32%以上である導電性粒子が示されている。 As an example of the conductive particles, Patent Document 1 below discloses conductive particles having core material particles (base material particles) and a metal or alloy film on the surface of the core material particles. . The conductive particles have a plurality of protrusions protruding from the surface of the film. The protrusion is composed of a particle connected body in which a plurality of metal or alloy particles are connected in a row. In Examples and Comparative Examples of Patent Document 1, conductive particles having a ratio of the connecting protrusions of 32% or more are shown.
 下記の特許文献2には、平均粒径1~20μmの球状の基材粒子の表面に、無電解めっき法によりニッケル導電層又はニッケル合金導電層が形成された導電性粒子が開示されている。この導電性粒子は、導電層の最表層に0.05~4μmの微小な突起を有する。該導電層と該突起とは実質的に連続的に連なっている。上記基材粒子としては、樹脂粒子が用いられている。 The following Patent Document 2 discloses conductive particles in which a nickel conductive layer or a nickel alloy conductive layer is formed on the surface of spherical base particles having an average particle diameter of 1 to 20 μm by an electroless plating method. The conductive particles have minute protrusions of 0.05 to 4 μm on the outermost layer of the conductive layer. The conductive layer and the protrusion are substantially continuously connected. Resin particles are used as the substrate particles.
特開2012-113850号公報JP 2012-113850 A 特開2000-243132号公報JP 2000-243132 A
 近年、電子機器の消費電力を低くすることが求められている。このため、導電性粒子には、導電性粒子により電気的に接続された電極間の接続抵抗をより一層低くすることが可能である性質が求められている。 In recent years, it has been required to reduce the power consumption of electronic devices. For this reason, the property which can make the connection resistance between the electrodes electrically connected by the electroconductive particle further lower is required for the electroconductive particle.
 しかしながら、特許文献1,2に記載のような従来の導電性粒子を用いて、電極間を電気的に接続した場合には、接続抵抗が高くなることがある。 However, when the electrodes are electrically connected using conventional conductive particles as described in Patent Documents 1 and 2, the connection resistance may increase.
 電極の表面及び導電性粒子の表面には、酸化膜が形成されていることが多い。特許文献1,2に記載の導電性粒子では、電極間の接続時に、突起が折れやすく、結果として、突起が酸化膜を十分に貫通しないことがある。このため、電極間の接続抵抗が高くなることがある。 An oxide film is often formed on the surface of the electrode and the surface of the conductive particles. In the conductive particles described in Patent Literatures 1 and 2, when the electrodes are connected, the protrusions are easily broken, and as a result, the protrusions may not sufficiently penetrate the oxide film. For this reason, the connection resistance between electrodes may become high.
 本発明の目的は、電極間を電気的に接続した場合に、接続抵抗を低くすることができる導電性粒子を提供することである。また、本発明の目的は、上記導電性粒子を用いた導電材料及び接続構造体を提供することである。 An object of the present invention is to provide conductive particles capable of reducing connection resistance when electrodes are electrically connected. Another object of the present invention is to provide a conductive material and a connection structure using the conductive particles.
 本発明の広い局面によれば、基材粒子と、前記基材粒子の表面上に配置された導電部とを備え、前記導電部が外表面に複数の突起を有し、前記導電部が結晶構造を有し、前記導電部における前記突起がある部分と前記突起がない部分とで、結晶構造が連続している、導電性粒子が提供される。 According to a wide aspect of the present invention, the method includes a base particle and a conductive portion disposed on a surface of the base particle, the conductive portion has a plurality of protrusions on an outer surface, and the conductive portion is a crystal. Provided is a conductive particle having a structure in which a crystal structure is continuous between a portion having the protrusion and a portion having no protrusion in the conductive portion.
 本発明に係る導電性粒子のある特定の局面では、前記導電部が、金属又は金属の合金により形成されており、前記突起が、前記金属又は金属の合金の粒子が列状に複数個連結して形成されておらず、かつ前記金属又は金属の合金により形成されている複数の第1の突起部を有し、前記突起が、前記金属又は金属の合金の粒子が列状に複数個連結した粒子連結体により形成された第2の突起部を有さないか、又は前記金属又は金属の合金の粒子が列状に複数個連結した粒子連結体により形成された第2の突起部を少なくとも1つ有し、前記第1の突起部と前記第2の突起部との全個数100%中の70%以上が、前記第1の突起部である。 In a specific aspect of the conductive particle according to the present invention, the conductive portion is formed of a metal or a metal alloy, and the protrusion includes a plurality of the metal or metal alloy particles connected in a row. A plurality of first protrusions formed of the metal or metal alloy, and the protrusions are formed by connecting a plurality of particles of the metal or metal alloy in a row. At least one second protrusion formed by a particle connected body in which a plurality of particles of the metal or metal alloy are connected in a row does not have the second protrusion formed by the particle connected body. 70% or more of the total number of the first protrusions and the second protrusions of 100% is the first protrusions.
 本発明に係る導電性粒子のある特定の局面では、前記第1の突起部と前記第2の突起部との全個数100%中の90%以上が、前記第1の突起部である。 In a specific aspect of the conductive particle according to the present invention, 90% or more of 100% of the total number of the first protrusions and the second protrusions is the first protrusions.
 本発明に係る導電性粒子のある特定の局面では、前記導電部における結晶子サイズが0.1nm以上、100nm以下である。 In a specific aspect of the conductive particle according to the present invention, the crystallite size in the conductive part is 0.1 nm or more and 100 nm or less.
 本発明に係る導電性粒子のある特定の局面では、前記導電部における結晶格子歪みが00.001%以上、10%以下である。 In a specific aspect of the conductive particle according to the present invention, the crystal lattice distortion in the conductive part is 0.0001% or more and 10% or less.
 本発明に係る導電性粒子のある特定の局面では、前記導電部がニッケルを含む。 In a specific aspect of the conductive particle according to the present invention, the conductive part contains nickel.
 本発明に係る導電性粒子のある特定の局面では、前記導電性粒子が、前記導電部の内部及び内側に、前記導電部の外表面を隆起させるための芯物質を有さない。 In a specific aspect of the conductive particle according to the present invention, the conductive particle does not have a core material for raising the outer surface of the conductive part inside and inside the conductive part.
 本発明に係る導電性粒子のある特定の局面では、前記突起の高さが、前記導電性粒子の粒子径の1/100以上である。 In a specific aspect of the conductive particle according to the present invention, the height of the protrusion is 1/100 or more of the particle diameter of the conductive particle.
 本発明に係る導電性粒子のある特定の局面では、前記導電性粒子は、前記導電部の外表面上に配置された絶縁性物質を備える。 In a specific aspect of the conductive particle according to the present invention, the conductive particle includes an insulating substance disposed on the outer surface of the conductive part.
 本発明の広い局面によれば、上述した導電性粒子と、バインダー樹脂とを含む、導電材料が提供される。 According to a wide aspect of the present invention, there is provided a conductive material including the above-described conductive particles and a binder resin.
 本発明の広い局面によれば、第1の電極を表面に有する第1の接続対象部材と、第2の電極を表面に有する第2の接続対象部材と、前記第1の接続対象部材と前記第2の接続対象部材とを接続している接続部とを備え、前記接続部が、上述した導電性粒子により形成されているか、又は前記導電性粒子とバインダー樹脂とを含む導電材料により形成されており、前記第1の電極と前記第2の電極とが前記導電性粒子により電気的に接続されている、接続構造体が提供される。 According to a wide aspect of the present invention, a first connection target member having a first electrode on the surface, a second connection target member having a second electrode on the surface, the first connection target member, and the A connection portion connecting the second connection target member, and the connection portion is formed of the above-described conductive particles or formed of a conductive material including the conductive particles and a binder resin. There is provided a connection structure in which the first electrode and the second electrode are electrically connected by the conductive particles.
 本発明に係る導電性粒子は、基材粒子と、上記基材粒子の表面上に配置された導電部とを備え、上記導電部が外表面に複数の突起を有し、上記導電部が結晶構造を有し、上記導電部における上記突起がある部分と上記突起がない部分とで、結晶構造が連続しているので、本発明に係る導電性粒子を用いて電極間を電気的に接続した場合に、接続抵抗を低くすることができる。 The conductive particles according to the present invention include base particles and conductive portions arranged on the surfaces of the base particles, the conductive portions have a plurality of protrusions on the outer surface, and the conductive portions are crystals. Since the crystal structure is continuous between the portion having the protrusion and the portion without the protrusion in the conductive portion, the electrodes are electrically connected using the conductive particles according to the present invention. In this case, the connection resistance can be lowered.
図1は、本発明の第1の実施形態に係る導電性粒子を示す断面図である。FIG. 1 is a cross-sectional view showing conductive particles according to the first embodiment of the present invention. 図2は、本発明の第2の実施形態に係る導電性粒子を示す断面図である。FIG. 2 is a cross-sectional view showing conductive particles according to the second embodiment of the present invention. 図3は、本発明の第3の実施形態に係る導電性粒子を示す断面図である。FIG. 3 is a cross-sectional view showing conductive particles according to the third embodiment of the present invention. 図4は、本発明の第1の実施形態に係る導電性粒子を用いた接続構造体を模式的に示す断面図である。FIG. 4 is a cross-sectional view schematically showing a connection structure using conductive particles according to the first embodiment of the present invention.
 以下、本発明の詳細を説明する。 Hereinafter, the details of the present invention will be described.
 (導電性粒子)
 本発明に係る導電性粒子は、基材粒子と、上記基材粒子の表面上に配置された導電部とを備える。本発明に係る導電性粒子では、上記導電部が外表面に複数の突起を有する。本発明に係る導電性粒子では、上記導電部が結晶構造を有する。本発明に係る導電性粒子では、上記導電部における上記突起がある部分と上記突起がない部分とで、結晶構造が連続している。
(Conductive particles)
The electroconductive particle which concerns on this invention is equipped with base material particle and the electroconductive part arrange | positioned on the surface of the said base material particle. In the conductive particles according to the present invention, the conductive portion has a plurality of protrusions on the outer surface. In the conductive particles according to the present invention, the conductive portion has a crystal structure. In the electroconductive particle which concerns on this invention, the crystal structure is continuing in the part with the said protrusion in the said electroconductive part, and the part without the said protrusion.
 本発明に係る導電性粒子における上述した構成の採用により、本発明に係る導電性粒子を用いて電極間を電気的に接続した場合に、接続抵抗を低くすることができる。この理由としては、結晶構造が連続していることによって、硬質になり、かつ延展性が高くなる結果、突起が比較的硬くなることが考えられる。 By adopting the above-described configuration of the conductive particles according to the present invention, the connection resistance can be lowered when the electrodes are electrically connected using the conductive particles according to the present invention. The reason for this is considered to be that the projection becomes relatively hard as a result of the crystal structure being continuous and becoming hard and having high spreadability.
 本発明では、電極間の接続抵抗を低くする観点から、上記導電部が結晶構造を有し、上記導電部における上記突起がある部分と上記突起がない部分とで、結晶構造が連続している。上記突起がない部分は、導電部の第1の部分であり、突起がある部分は、第1の部分よりも厚みが厚い第2の部分である。第1の部分では、導電部の外表面が隆起していない。 In the present invention, from the viewpoint of reducing the connection resistance between the electrodes, the conductive portion has a crystal structure, and the crystal structure is continuous between the portion where the protrusion is present and the portion where the protrusion is not present in the conductive portion. . The portion without the protrusion is the first portion of the conductive portion, and the portion with the protrusion is the second portion that is thicker than the first portion. In the first portion, the outer surface of the conductive portion is not raised.
 電極間の接続抵抗を効果的に低くする観点からは、上記導電部における結晶子サイズは好ましくは0.1nm以上、より好ましくは1.73nm以上、更に好ましくは5nm以上、好ましくは100nm以下、より好ましくは50nm以下、更に好ましくは10nm以下である。この理由としては、上記導電部の結晶子サイズが上記下限以上及び上記上限以下であると、より一層硬質になり、かつ延展性がより一層高くなる結果、突起が比較的硬くなることが考えられる。上記の結晶子サイズを満足する導電部では、電極間の接続時に、突起が折れにくくなり、突起が損傷しにくくなる。本発明では、上記の結晶子サイズを満足する導電部を形成することで、突起が電極又は導電性粒子の表面の酸化膜を十分に貫通するために、電極間の接続抵抗をより一層低くすることができる。 From the viewpoint of effectively reducing the connection resistance between the electrodes, the crystallite size in the conductive part is preferably 0.1 nm or more, more preferably 1.73 nm or more, still more preferably 5 nm or more, preferably 100 nm or less, more Preferably it is 50 nm or less, More preferably, it is 10 nm or less. The reason for this is that if the crystallite size of the conductive part is not less than the above lower limit and not more than the above upper limit, the protrusion becomes relatively hard as a result of becoming harder and further spreading. . In the conductive part satisfying the above crystallite size, the protrusions are not easily broken when the electrodes are connected, and the protrusions are hardly damaged. In the present invention, by forming the conductive portion satisfying the above crystallite size, the protrusion sufficiently penetrates the oxide film on the surface of the electrode or the conductive particle, so that the connection resistance between the electrodes is further reduced. be able to.
 電極間の接続抵抗を効果的に低くする観点からは、上記導電部における結晶格子歪みは好ましくは0.001%以上、より好ましくは0.01%以上、更に好ましくは0.1%以上、特に好ましくは0.15%以上、好ましくは10%以下、より好ましくは5%以下、更に好ましくは1%以下である。 From the viewpoint of effectively reducing the connection resistance between the electrodes, the crystal lattice distortion in the conductive part is preferably 0.001% or more, more preferably 0.01% or more, still more preferably 0.1% or more, particularly Preferably it is 0.15% or more, Preferably it is 10% or less, More preferably, it is 5% or less, More preferably, it is 1% or less.
 上記結晶子サイズ、上記結晶構造の連続性及び上記結晶格子歪みを、本発明に係る導電性粒子において最適化するためには、主金属に対して共析させる金属の割合の最適化、めっき反応速度の最適化、めっき浴中のpHの最適化、及びめっき浴中の温度の最適化などが適宜行われる。 In order to optimize the crystallite size, the continuity of the crystal structure and the crystal lattice distortion in the conductive particles according to the present invention, the ratio of the metal to be co-deposited with respect to the main metal, the plating reaction, Optimization of speed, optimization of pH in the plating bath, optimization of temperature in the plating bath, and the like are appropriately performed.
 上記導電部における結晶子サイズを微細にする方法としては、ニッケル導電部中のリン含有量の増加による微細化、ニッケル導電部中のボロン含有量の増加による微細化、めっき液中の有機系光沢剤の添加による微細化、並びに金属系光沢剤の添加による微細化の方法等が挙げられる。特にニッケルめっき導電部中のリン及びボロン含有量の増加、有機系光沢剤の添加が、導電部における結晶子サイズの微細化に効果がある。 The method for making the crystallite size in the conductive part finer is to make it finer by increasing the phosphorus content in the nickel conductive part, making it finer by increasing the boron content in the nickel conductive part, and organic luster in the plating solution. Examples thereof include a method of refining by adding an agent and a method of refining by adding a metallic brightener. In particular, an increase in the content of phosphorus and boron in the nickel-plated conductive part and the addition of an organic brightener are effective in reducing the crystallite size in the conductive part.
 ニッケルめっき導電部中のリン及びボロン含有量を増加させる方法としては、めっき液のpHを低くしてニッケルめっき液の反応速度を遅くする方法、ニッケルめっき液の温度下げる方法、ニッケルめっき液中のリン系還元剤及びボロン系還元剤の濃度を高くする方法、ニッケルめっき液中の錯化剤の濃度を高くする方法等が挙げられる。これらの方法は、1種のみが用いられてもよく、2種以上が併用されてもよい。 As a method of increasing the phosphorus and boron contents in the nickel plating conductive part, the method of lowering the pH of the plating solution to slow the reaction rate of the nickel plating solution, the method of lowering the temperature of the nickel plating solution, Examples thereof include a method of increasing the concentration of the phosphorus-based reducing agent and the boron-based reducing agent, and a method of increasing the concentration of the complexing agent in the nickel plating solution. As for these methods, only 1 type may be used and 2 or more types may be used together.
 上記有機系光沢剤としては、サッカリン、ナフタレンジスルホン酸ナトリウム、ナフタレントリスルホン酸ナトリウム、アリルスルホン酸ナトリウム、プロパギルスルホン酸ナトリウム、ブチンジオール、プロパギルアルコール、クマリン、ホルマリン、エトキシ化ポリエチレンイミン、ポリアルキルイミン、ポリエチレンイミン、ゼラチン、デキストリン、チオ尿素、ポリビニルアルコール、ポリエチレングリコール、ポリアクリルアミド、ケイ皮酸、ニコチン酸及びベンザルアセトン等が挙げられる。上記有機系光沢剤は、1種のみが用いられてもよく、2種以上が併用されてもよい。 Examples of the organic brightener include saccharin, sodium naphthalene disulfonate, sodium naphthalene trisulfonate, sodium allyl sulfonate, sodium propargyl sulfonate, butynediol, propargyl alcohol, coumarin, formalin, ethoxylated polyethyleneimine, polyalkyl Examples include imine, polyethyleneimine, gelatin, dextrin, thiourea, polyvinyl alcohol, polyethylene glycol, polyacrylamide, cinnamic acid, nicotinic acid, and benzalacetone. As for the said organic type brightener, only 1 type may be used and 2 or more types may be used together.
 さらに、上記有機系光沢剤の好ましい例としては、エトキシ化ポリエチレンイミン、ポリアルキルイミン、ポリエチレンイミン、及びポリエチレングリコール等が挙げられる。 Furthermore, preferred examples of the organic brightener include ethoxylated polyethyleneimine, polyalkylimine, polyethyleneimine, and polyethylene glycol.
 上記導電部における結晶格子歪みを低くする方法としては、金属安定剤をめっき液に添加する方法等が挙げられる。上記金属安定剤の添加により、めっき液の安定性が向上し、結晶格子歪みが低くなって、基材粒子への被覆性が良いめっき膜が形成される。上記金属安定剤としては、鉛化合物、ビスマス化合物、タリウム化合物、及びバナジウム化合物等が挙げられる。上記金属安定剤の具体例としては、化合物を構成する金属(鉛、ビスマス、タリウム、バナジウム)の硫酸塩、炭酸塩、酢酸塩、硝酸塩及び塩酸塩等が挙げられる。環境への影響を考慮すると、ビスマス化合物、タリウム化合物又はバナジウム化合物が好ましい。 Examples of a method for reducing the crystal lattice distortion in the conductive part include a method of adding a metal stabilizer to the plating solution. Addition of the metal stabilizer improves the stability of the plating solution, lowers the crystal lattice distortion, and forms a plating film with good coverage on the substrate particles. Examples of the metal stabilizer include lead compounds, bismuth compounds, thallium compounds, and vanadium compounds. Specific examples of the metal stabilizer include sulfates, carbonates, acetates, nitrates and hydrochlorides of metals (lead, bismuth, thallium, vanadium) constituting the compound. In consideration of the influence on the environment, a bismuth compound, a thallium compound or a vanadium compound is preferable.
 上記導電性粒子における上記突起の高さは、好ましくは0.001μm以上、より好ましくは0.05μm以上、好ましくは0.9μm以下、より好ましくは0.2μm以下である。上記突起の高さが上記下限以上及び上記上限以下であると、電極間の接続抵抗が効果的に低くなる。上記突起の高さは、導電性粒子1個当たりの複数の突起の高さの平均である。上記突起の高さは、導電性粒子の中心と突起の先端とを結ぶ線(図1に示す破線L1)上における、突起が無いと想定した場合の導電部の仮想線(図1に示す破線L2)上(突起が無いと想定した場合の球状の導電性粒子の外表面上)から突起の先端までの距離を示す。すなわち、図1においては、破線L1と破線L2との交点から突起の先端までの距離を示す。 The height of the protrusions in the conductive particles is preferably 0.001 μm or more, more preferably 0.05 μm or more, preferably 0.9 μm or less, more preferably 0.2 μm or less. When the height of the protrusion is not less than the lower limit and not more than the upper limit, the connection resistance between the electrodes is effectively reduced. The height of the protrusion is an average of the heights of a plurality of protrusions per conductive particle. The height of the projection is a virtual line of the conductive portion (dashed line shown in FIG. 1) on the assumption that there is no projection on the line (dashed line L1 shown in FIG. 1) connecting the center of the conductive particles and the tip of the projection. L2) Indicates the distance from the top (on the outer surface of the spherical conductive particles assuming no projection) to the tip of the projection. That is, in FIG. 1, the distance from the intersection of the broken line L1 and the broken line L2 to the tip of the protrusion is shown.
 接続抵抗を効果的に低くし、電極間の接続信頼性を効果的に高める観点からは、上記突起の高さが、上記導電性粒子の粒子径の1/100以上であることが好ましく、1/15以上であることがより好ましい。また、突起の高さが、導電性粒子の粒子径の1/6以下であることが好ましい。なお、後述する実施例では全て、突起の高さは導電性粒子の粒子径の1/15以上、1/6以下である。 From the viewpoint of effectively reducing the connection resistance and effectively increasing the connection reliability between the electrodes, the height of the protrusion is preferably 1/100 or more of the particle diameter of the conductive particles. / 15 or more is more preferable. The height of the protrusion is preferably 1/6 or less of the particle diameter of the conductive particles. In all the examples described later, the height of the protrusion is not less than 1/15 and not more than 1/6 of the particle diameter of the conductive particles.
 上記導電性粒子1個当たりの上記の突起は、好ましくは3個以上、より好ましくは5個以上である。上記突起の数の上限は特に限定されない。突起の数の上限は導電性粒子の粒子径等を考慮して適宜選択できる。上記導電部の外表面の全表面積100%中、上記突起がある部分の表面積は好ましくは30%以上、より好ましくは50%以上である。 The number of the protrusions per conductive particle is preferably 3 or more, more preferably 5 or more. The upper limit of the number of protrusions is not particularly limited. The upper limit of the number of protrusions can be appropriately selected in consideration of the particle diameter of the conductive particles. Of the total surface area of 100% of the outer surface of the conductive part, the surface area of the portion having the protrusion is preferably 30% or more, more preferably 50% or more.
 上記突起は、上記金属又は金属の合金の粒子が列状に複数個連結して形成されておらず、かつ上記金属又は金属の合金により形成されている複数の第1の突起部を有していてもよい。上記突起は、上記金属又は金属の合金の粒子が列状に複数個連結した粒子連結体により形成された第2の突起部を有さないか、又は上記金属又は金属の合金の粒子が列状に複数個連結した粒子連結体により形成された第2の突起部を少なくとも1つ有していてもよい。本発明に係る導電性粒子では、上記第1の突起部と上記第2の突起部との全個数100%中の70%以上が、上記第1の突起部であることが好ましい。この場合には、電極間の接続抵抗がより一層低くなる。但し、上記第1の突起部と上記第2の突起部との全個数100%中の70%未満が、上記第1の突起部であってもよく、その場合でも、上記導電部における上記突起がある部分と上記突起がない部分とで、結晶構造が連続していれば、本発明の効果が得られる。 The protrusions are not formed by connecting a plurality of particles of the metal or metal alloy in a row, and have a plurality of first protrusions formed of the metal or metal alloy. May be. The protrusion does not have a second protrusion formed by a particle connected body in which a plurality of particles of the metal or metal alloy are connected in a row, or the particles of the metal or metal alloy are in a row At least one second protrusion formed by a particle connected body connected to a plurality of particles may be provided. In the conductive particles according to the present invention, it is preferable that 70% or more of the total number of the first protrusions and the second protrusions is 70% or more. In this case, the connection resistance between the electrodes is further reduced. However, less than 70% of the total number of 100% of the first protrusions and the second protrusions may be the first protrusions, and even in that case, the protrusions in the conductive part The effect of the present invention can be obtained if the crystal structure is continuous between the portion having the protrusion and the portion having no protrusion.
 上記第2の突起部は、上記第1の突起部と比べて、電極間の接続時に、折れたり、損傷したりしやすい。このため、上記第1の突起部と上記第2の突起部との全個数に占める上記第1の突起部の割合が少なくなり(例えば70%未満)、かつ上記第2の突起部の割合が多くなると(例えば30%以上)、突起が、電極又は導電性粒子の表面の酸化膜を十分に貫通せずに、電極間の接続抵抗が高くなりやすい傾向がある。これに対して、上記第1の突起部と上記第2の突起部との全個数に占める上記第1の突起部の割合が多いことで、突起が電極又は導電性粒子の表面の酸化膜を十分に貫通するために、電極間の接続抵抗をより一層低くすることができる。 The second protrusion is more likely to be broken or damaged when connected between the electrodes than the first protrusion. For this reason, the ratio of the first protrusions to the total number of the first protrusions and the second protrusions decreases (for example, less than 70%), and the ratio of the second protrusions decreases. When it increases (for example, 30% or more), the projections do not sufficiently penetrate the oxide film on the surface of the electrode or the conductive particles, and the connection resistance between the electrodes tends to increase. On the other hand, since the ratio of the first protrusions in the total number of the first protrusions and the second protrusions is large, the protrusions form an oxide film on the surface of the electrode or the conductive particles. In order to sufficiently penetrate, the connection resistance between the electrodes can be further reduced.
 導電部の外表面に複数の突起を有する導電性粒子は、知られている。また、特開2012-113850号公報では、金属又は合金の複数の粒子が列状に連結した粒子連結体から構成されている突起を有する導電性粒子が開示されている。特開2012-113850号公報の実施例及び比較例では、連結突起部の割合が32%以上である導電性粒子が示されている。しかしながら、このような連結突起部を有する導電性粒子において、連結突起部の割合が比較的大きいと、電極間の接続抵抗が十分に低くならないことがある。これに対して、本発明に係る導電性粒子では、連結突起部が無いか、又は連結突起部の割合が少ないために、電極間の接続抵抗を十分に低くすることができる。 Conductive particles having a plurality of protrusions on the outer surface of the conductive part are known. Japanese Patent Application Laid-Open No. 2012-113850 discloses conductive particles having protrusions made of a particle connected body in which a plurality of metal or alloy particles are connected in a row. In the examples and comparative examples of Japanese Patent Application Laid-Open No. 2012-113850, conductive particles in which the proportion of the connecting protrusions is 32% or more are shown. However, in the conductive particles having such connecting projections, if the proportion of the connecting projections is relatively large, the connection resistance between the electrodes may not be sufficiently low. On the other hand, in the conductive particles according to the present invention, the connection resistance between the electrodes can be sufficiently lowered because there is no connection protrusion or the ratio of the connection protrusion is small.
 上記第1の突起部は、上記金属又は金属の合金の粒子が列状に複数個連結して形成されておらず、かつ上記金属又は金属の合金により形成されている。上記第1の突起部は、上記粒子連結体以外の突起部である。上記第2の突起部は、上記金属又は金属の合金の粒子が列状に複数個連結した粒子連結体により形成されている。上記突起は、上記第1の突起と上記第2の突起との双方により形成されている。上記第2の突起部及び上記粒子連結体を構成している個々の粒子は、導電部を形成している金属又は金属の合金により形成されている。また、上記第1の突起及び上記第2の突起は、直線状部に分岐した突起部が混在した形状でもよい。分岐の数及び分岐の形態に関しては、2分岐又は多数分岐していてもよく、樹枝状でもよい。 The first protrusion is not formed by connecting a plurality of particles of the metal or metal alloy in a row, and is formed of the metal or metal alloy. The first protrusion is a protrusion other than the particle connected body. The second protrusion is formed of a particle connected body in which a plurality of particles of the metal or metal alloy are connected in a row. The protrusion is formed by both the first protrusion and the second protrusion. The individual particles constituting the second protrusion and the particle connected body are formed of a metal or metal alloy forming a conductive portion. The first protrusion and the second protrusion may have a shape in which protrusions branched into linear portions are mixed. Regarding the number of branches and the form of branching, they may be bifurcated or multi-branched, and may be dendritic.
 電極間の接続抵抗をより一層低くする観点からは、上記第1の突起部と上記第2の突起部との全個数100%中の上記第1の突起部の個数の割合はより好ましくは80%以上、更に好ましくは90%以上、特に好ましくは95%以上であり、上記第2の突起部の個数の割合はより好ましくは30%未満、更に好ましくは20%未満、特に好ましくは10%未満、最も好ましくは5%未満である。 From the viewpoint of further reducing the connection resistance between the electrodes, the ratio of the number of the first protrusions to the total number of the first protrusions and the second protrusions of 100% is more preferably 80. % Or more, more preferably 90% or more, particularly preferably 95% or more, and the ratio of the number of the second protrusions is more preferably less than 30%, still more preferably less than 20%, and particularly preferably less than 10%. Most preferably, it is less than 5%.
 上記第1の突起部と上記第2の突起部との全個数100%中の上記第2の突起部の割合は1%以上であってもよく、上記第1の突起部の割合は99%以下であってもよい。 The ratio of the second protrusions in the total number of 100% of the first protrusions and the second protrusions may be 1% or more, and the ratio of the first protrusions is 99%. It may be the following.
 上記第1の突起部と上記第2の突起部は、以下のようにして数えられる。 The first protrusion and the second protrusion are counted as follows.
 走査型電子顕微鏡(SEM)で倍率を25000倍に設定して、10個の粒子を無作為に選択し、それぞれの粒子の突起部を観察する。全ての突起部について、上記金属又は金属の合金の粒子が列状に複数個連結して形成されておらず、かつ金属又は金属の合金により形成されている突起部と、金属又は金属の合金の粒子が列状に複数個連結した粒子連結体により形成されている突起部とに分別する。金属又は金属の合金の粒子が複数個連結しているか否かは、上記金属又は金属の合金の粒子間に粒界が観察されるか否かにより判断することができる。 The magnification is set to 25000 times with a scanning electron microscope (SEM), 10 particles are randomly selected, and the protrusions of each particle are observed. For all of the protrusions, the metal or metal alloy particles are not formed by connecting a plurality of particles in a row, and the protrusion is formed of a metal or metal alloy, and the metal or metal alloy. The particles are separated into protrusions formed by a particle connected body in which a plurality of particles are connected in a row. Whether or not a plurality of metal or metal alloy particles are connected can be determined by whether or not a grain boundary is observed between the metal or metal alloy particles.
 電極間の接続抵抗を効果的に低くする観点からは、上記第1の突起部の高さが、上記導電部の上記突起が無い部分の厚みの0.5倍以上であることが好ましく、2倍以上であることがより好ましく、3倍以上であることが更に好ましく、10倍以下であることが好ましく、7倍以下であることがより好ましい。上記第1の突起部の高さは、1つの導電性粒子あたりの第1の突起部の高さの平均である。 From the viewpoint of effectively reducing the connection resistance between the electrodes, the height of the first protrusion is preferably 0.5 times or more the thickness of the portion of the conductive portion where the protrusion is not present. It is more preferably at least twice, more preferably at least 3 times, more preferably at most 10 times, and even more preferably at most 7 times. The height of the first protrusion is an average of the height of the first protrusion per one conductive particle.
 上記第1の突起部の高さは、導電性粒子の中心と第1の突起部の先端とを結ぶ線(図1に示す破線L1)上における、第1の突起部が無いと想定した場合の導電部の仮想線(図1に示す破線L2)上(第1の突起部が無いと想定した場合の球状の導電性粒子の外表面上)から第1の突起部の先端までの距離を示す。すなわち、図1においては、破線L1と破線L2との交点から第1の突起部の先端までの距離を示す。また、第1の突起部が分岐した突起部である場合、第1の突起部の先端は、導電性粒子の外表面から最も離れている突起部の先端部分である。 When the height of the first protrusion is assumed that there is no first protrusion on the line connecting the center of the conductive particles and the tip of the first protrusion (broken line L1 shown in FIG. 1) The distance from the imaginary line (broken line L2 shown in FIG. 1) of the conductive portion (on the outer surface of the spherical conductive particles when it is assumed that there is no first protrusion) to the tip of the first protrusion Show. That is, in FIG. 1, the distance from the intersection of the broken line L1 and the broken line L2 to the tip of the first protrusion is shown. When the first protrusion is a branched protrusion, the tip of the first protrusion is the tip of the protrusion that is farthest from the outer surface of the conductive particles.
 電極間の接続抵抗を効果的に低くする観点からは、上記第1の突起部の幅は、上記導電部の上記突起が無い部分の厚みの0.1倍以上であることが好ましく、0.5倍以上であることがより好ましく、1倍以上であることが更に好ましく、5倍以下であることが好ましく、3倍以下であることがより好ましい。上記第1の突起部の幅は、上記第1の突起部の高さ方向と直交する方向における最大径である。 From the viewpoint of effectively reducing the connection resistance between the electrodes, the width of the first protrusion is preferably 0.1 times or more the thickness of the portion of the conductive part where the protrusion is not provided. It is more preferably 5 times or more, more preferably 1 time or more, further preferably 5 times or less, and more preferably 3 times or less. The width of the first protrusion is the maximum diameter in a direction orthogonal to the height direction of the first protrusion.
 電極間の接続抵抗を効果的に低くする観点からは、上記第2の突起部の高さが、上記導電部の上記突起が無い部分の厚みの0.5倍以上であることが好ましく、2倍以上であることがより好ましく、3倍以上であることが更に好ましく、10倍以下であることが好ましく、7倍以下であることがより好ましい。上記第2の突起部の高さは、1つの導電性粒子あたりの第2の突起部の高さの平均である。 From the viewpoint of effectively reducing the connection resistance between the electrodes, the height of the second protrusion is preferably 0.5 times or more the thickness of the portion of the conductive portion where the protrusion is absent. It is more preferably at least twice, more preferably at least 3 times, more preferably at most 10 times, and even more preferably at most 7 times. The height of the second protrusion is the average of the height of the second protrusion per conductive particle.
 上記第2の突起部の高さは、上記第1の突起部の高さと同様に定義される。すなわち、上記第2の突起部の高さは、導電性粒子の中心と第2の突起部の先端とを結ぶ線上における、第2の突起部が無いと想定した場合の導電部の仮想線上(第2の突起部が無いと想定した場合の球状の導電性粒子の外表面上)から第2の突起部の先端までの距離を示す。第2の突起部が分岐した突起部である場合、第2の突起部の先端は、導電性粒子の外表面から最も離れている突起部の先端部分である。 The height of the second protrusion is defined in the same manner as the height of the first protrusion. That is, the height of the second projecting portion is on the imaginary line of the conductive portion when it is assumed that there is no second projecting portion on the line connecting the center of the conductive particles and the tip of the second projecting portion ( The distance from the outer surface of the spherical conductive particles (assuming that there is no second protrusion) to the tip of the second protrusion is shown. When the second protrusion is a branched protrusion, the tip of the second protrusion is the tip of the protrusion that is farthest from the outer surface of the conductive particles.
 電極間の接続抵抗を効果的に低くする観点からは、上記第2の突起部の幅は、上記導電部の上記突起が無い部分の厚みの0.1倍以上であることが好ましく、0.5倍以上であることがより好ましく、1倍以上であることが更に好ましく、5倍以下であることが好ましく、3倍以下であることがより好ましい。上記第2の突起部の幅は、上記第2の突起部の高さ方向と直交する方向における最大径である。 From the viewpoint of effectively reducing the connection resistance between the electrodes, the width of the second protrusion is preferably 0.1 times or more the thickness of the portion of the conductive portion where the protrusion is not provided. It is more preferably 5 times or more, more preferably 1 time or more, further preferably 5 times or less, and more preferably 3 times or less. The width of the second protrusion is the maximum diameter in a direction orthogonal to the height direction of the second protrusion.
 上記第2の突起部を構成している上記金属又は金属の合金の粒子の粒子径は好ましくは10nm以上、より好ましくは20nm以上、好ましくは500nm以下、より好ましくは400nm以下である。上記第2の突起部を構成している上記金属又は金属の合金の粒子の粒子径が上記下限以上及び上記上限以下であると、電極間の接続抵抗がより一層低くなる。上記第2の突起部を構成している上記金属又は金属の合金の粒子の粒子径は、最大径を意味する。 The particle diameter of the metal or metal alloy particles constituting the second protrusion is preferably 10 nm or more, more preferably 20 nm or more, preferably 500 nm or less, more preferably 400 nm or less. When the particle diameter of the metal or metal alloy particles constituting the second protrusion is not less than the lower limit and not more than the upper limit, the connection resistance between the electrodes is further reduced. The particle diameter of the metal or metal alloy particles constituting the second protrusion means the maximum diameter.
 上記第1の突起部は、具体的には、金属又は金属の合金の粒子が列状に複数個連結して形成されていない突起部であり、走査型電子顕微鏡(SEM)で観察したときに、金属又は金属の合金の粒子間に粒界が確認される突起部とは異なる突起部である。 Specifically, the first protrusion is a protrusion that is not formed by connecting a plurality of particles of metal or metal alloy in a row, and is observed with a scanning electron microscope (SEM). The protrusion is different from the protrusion in which the grain boundary is confirmed between the particles of the metal or metal alloy.
 上記第2の突起部では、走査型電子顕微鏡(SEM)で観察したときに、上記金属又は金属の合金の粒子間に粒界が観察される。この事実によって上記第2の突起部は、複数の上記金属又は金属の合金の粒子が連結して形成されていることが確認される。上記第1の突起部では、上記金属又は金属の合金において、粒界は観察されない。 In the second protrusion, grain boundaries are observed between particles of the metal or metal alloy when observed with a scanning electron microscope (SEM). This fact confirms that the second protrusion is formed by connecting a plurality of particles of the metal or metal alloy. In the first protrusion, no grain boundary is observed in the metal or metal alloy.
 上記第1の突起部と上記第2の突起部とは、走査型電子顕微鏡(SEM)により判別される。上記第1の突起部は、粒界が存在しないために、粒子連結体ではない。 The first protrusion and the second protrusion are discriminated by a scanning electron microscope (SEM). The first protrusion is not a particle connected body because there is no grain boundary.
 複数の上記金属又は金属の合金の粒子は、列状に連結することで、上記第2の突起部が形成される。列状に連結していることに関しては、複数の上記金属又は金属の合金の粒子が、ある方向に延びるように連結していることを意味する。上記第2の突起部は、例えば複数の上記金属又は金属の合金の粒子が直線状に連結して構成されていてもよく、複数の上記金属又は金属の合金の粒子の連結によって、蛇行した形状の第2の突起部が形成されてもよい。また、直線状部と蛇行部とが混在していてもよい。更に上記第2の突起部は、導電部側の基部から先端部に向かうまでの間で複数に分岐していてもよい。例えば上記第2の突起部は、Y字状などであってもよい。1個の導電性粒子に着目したとき、存在する複数の第2の突起部の形状は同じであってもよく、異なっていてもよい。 The plurality of the metal or metal alloy particles are connected in a row to form the second protrusion. With respect to being connected in a row, it means that a plurality of particles of the metal or metal alloy are connected so as to extend in a certain direction. For example, the second protrusion may be configured by linearly connecting a plurality of particles of the metal or metal alloy, and has a meandering shape by connecting the plurality of particles of the metal or metal alloy. The second protrusion may be formed. Moreover, the linear part and the meandering part may be mixed. Further, the second protrusion may be branched into a plurality of portions from the base on the conductive portion side to the tip. For example, the second protrusion may be Y-shaped. When attention is paid to one conductive particle, the shapes of the plurality of second protrusions present may be the same or different.
 複数の第2の突起部においては、上記金属又は金属の合金の粒子の数は同じであってもよく、異なっていてもよい。上記第2の突起部は、少なくとも2個の上記金属又は金属の合金の粒子が列状に連結して構成されている。上記第2の突起部における上記金属又は金属の合金の粒子の連結個数は2以上であり、好ましくは30以下、より好ましくは20以下、更に好ましくは5以下、特に好ましくは3以下である。上記第2の突起部を構成する上記金属又は金属の合金の粒子の数は、上記第2の突起部を走査型電子顕微鏡(SEM)にて観察して計測する。 In the plurality of second protrusions, the number of particles of the metal or metal alloy may be the same or different. The second protrusion is configured by connecting at least two particles of the metal or metal alloy in a row. The number of connected particles of the metal or metal alloy in the second protrusion is 2 or more, preferably 30 or less, more preferably 20 or less, still more preferably 5 or less, and particularly preferably 3 or less. The number of particles of the metal or metal alloy constituting the second protrusion is measured by observing the second protrusion with a scanning electron microscope (SEM).
 電極間の接続抵抗をより一層良好にする観点からは、1つの導電性粒子あたりの上記第1の突起部と上記第2の突起部との合計の個数は好ましくは5個以上、より好ましくは10個以上、更に好ましくは20個以上、好ましくは1000個以下、より好ましくは500個以下、更に好ましくは300個以下である。 From the viewpoint of further improving the connection resistance between the electrodes, the total number of the first protrusions and the second protrusions per conductive particle is preferably 5 or more, more preferably 10 or more, more preferably 20 or more, preferably 1000 or less, more preferably 500 or less, and still more preferably 300 or less.
 上記第2の突起部よりも上記第1の突起部を形成しやすくする方法としては、高分子量の錯化剤を使用する方法、並びに硫黄系の安定剤を使用する方法等が挙げられる。高分子量の錯化剤を使用することで、錯体のサイズが大きくなり、錯体が複数の突起間に入り込みにくくなり、突起部のみを選択的に成長させることができる。 Examples of a method for making the first protrusion more easily formed than the second protrusion include a method using a high molecular weight complexing agent and a method using a sulfur-based stabilizer. By using a high molecular weight complexing agent, the size of the complex increases, the complex becomes difficult to enter between the plurality of protrusions, and only the protrusions can be selectively grown.
 上記導電性粒子を10%圧縮したときの圧縮弾性率(10%K値)は好ましくは1000N/mm以上、より好ましくは5000N/mm以上、更に好ましくは6300N/mm以上、好ましくは20000N/mm以下、より好ましくは16000N/mm以下である。上記10%K値が上記下限以上及び上記上限以下であると、電極間の接続抵抗が効果的に低くなる。 Compression modulus when the conductive particles are compressed 10% (10% K value) is preferably 1000 N / mm 2 or more, more preferably 5000N / mm 2 or more, more preferably 6300N / mm 2 or more, preferably 20000N / Mm 2 or less, more preferably 16000 N / mm 2 or less. When the 10% K value is not less than the lower limit and not more than the upper limit, the connection resistance between the electrodes is effectively reduced.
 上記導電性粒子における上記圧縮弾性率(10%K値)は、以下のようにして測定できる。 The compression elastic modulus (10% K value) of the conductive particles can be measured as follows.
 微小圧縮試験機を用いて、円柱(直径100μm、ダイヤモンド製)の平滑圧子端面で、25℃、圧縮速度0.3mN/秒、及び最大試験荷重20mNの条件下で導電性粒子を圧縮する。このときの荷重値(N)及び圧縮変位(mm)を測定する。得られた測定値から、上記圧縮弾性率を下記式により求めることができる。上記微小圧縮試験機として、例えば、フィッシャー社製「フィッシャースコープH-100」等が用いられる。 Using a micro-compression tester, the conductive particles are compressed under the conditions of a smooth indenter end face of a cylinder (diameter 100 μm, made of diamond) at 25 ° C., a compression rate of 0.3 mN / second, and a maximum test load of 20 mN. The load value (N) and compression displacement (mm) at this time are measured. From the measured value obtained, the compression elastic modulus can be obtained by the following formula. As the micro compression tester, for example, “Fischer Scope H-100” manufactured by Fischer is used.
 10%K値(N/mm)=(3/21/2)・F・S-3/2・R-1/2
 F:導電性粒子が10%圧縮変形したときの荷重値(N)
 S:導電性粒子が10%圧縮変形したときの圧縮変位(mm)
 R:導電性粒子の半径(mm)
10% K value (N / mm 2 ) = (3/2 1/2 ) · F · S −3 / 2 · R −1/2
F: Load value when the conductive particles are 10% compressively deformed (N)
S: Compression displacement (mm) when the conductive particles are 10% compressively deformed
R: radius of conductive particles (mm)
 上記圧縮弾性率は、導電性粒子の硬さを普遍的かつ定量的に表す。上記圧縮弾性率の使用により、導電性粒子の硬さを定量的かつ一義的に表すことができる。 The above-mentioned compression elastic modulus universally and quantitatively represents the hardness of the conductive particles. By using the compression elastic modulus, the hardness of the conductive particles can be expressed quantitatively and uniquely.
 上記導電性粒子の粒子径は、好ましくは0.5μm以上、より好ましくは1μm以上、好ましくは500μm以下、より好ましくは100μm以下、更に好ましくは50μm以下、特に好ましくは20μm以下、最も好ましくは10μm以下である。導電性粒子の粒子径が上記下限以上及び上記上限以下であると、導電性粒子を用いて電極間を接続した場合に、導電性粒子と電極との接触面積が充分に大きくなり、かつ導電部を形成する際に凝集した導電性粒子が形成されにくくなる。また、導電性粒子を介して接続された電極間の間隔が大きくなりすぎず、かつ導電部が基材粒子の表面から剥離し難くなる。 The particle diameter of the conductive particles is preferably 0.5 μm or more, more preferably 1 μm or more, preferably 500 μm or less, more preferably 100 μm or less, still more preferably 50 μm or less, particularly preferably 20 μm or less, and most preferably 10 μm or less. It is. When the particle diameter of the conductive particles is not less than the above lower limit and not more than the above upper limit, the contact area between the conductive particles and the electrode becomes sufficiently large when the electrodes are connected using the conductive particles, and the conductive part When forming the conductive particles, it becomes difficult to form aggregated conductive particles. Further, the distance between the electrodes connected via the conductive particles does not become too large, and the conductive portion is difficult to peel from the surface of the base particle.
 上記導電性粒子の粒子径は、数平均粒子径を示す。導電性粒子の数平均粒子径は、任意の導電性粒子50個を電子顕微鏡又は光学顕微鏡にて観察し、平均値を算出することにより求められる。 The particle diameter of the conductive particles indicates a number average particle diameter. The number average particle diameter of the conductive particles is obtained by observing 50 arbitrary conductive particles with an electron microscope or an optical microscope and calculating an average value.
 以下、図面を参照しつつ本発明の具体的な実施形態及び実施例を説明することにより、本発明を明らかにする。なお、参照した図面では、大きさ及び厚みなどは、図示の便宜上、実際の大きさ及び厚みから適宜変更している。なお、各実施形態における異なる部分構成は、適宜置き換えて、組み合わせることが可能である。 Hereinafter, the present invention will be clarified by describing specific embodiments and examples of the present invention with reference to the drawings. In the referenced drawings, the size and thickness are appropriately changed from the actual size and thickness for convenience of illustration. Note that different partial configurations in the respective embodiments can be appropriately replaced and combined.
 図1は、本発明の第1の実施形態に係る導電性粒子を示す断面図である。 FIG. 1 is a cross-sectional view showing conductive particles according to the first embodiment of the present invention.
 図1に示す導電性粒子1は、基材粒子2と、基材粒子2の表面上に配置された導電部3とを有する。導電性粒子1では、導電部3は導電層である。導電部3は、基材粒子2の表面を覆っている。導電性粒子1は、基材粒子2の表面が導電部3により被覆された被覆粒子である。 1 has a base particle 2 and a conductive portion 3 disposed on the surface of the base particle 2. The conductive particle 1 shown in FIG. In the conductive particles 1, the conductive part 3 is a conductive layer. The conductive part 3 covers the surface of the base particle 2. The conductive particle 1 is a coated particle in which the surface of the base particle 2 is coated with the conductive portion 3.
 導電性粒子1は、導電性の表面に複数の突起1aを有する。導電部3は外表面に複数の突起3aを有する。 The conductive particles 1 have a plurality of protrusions 1a on the conductive surface. The conductive portion 3 has a plurality of protrusions 3a on the outer surface.
 導電部3は、第1の部分と、該第1の部分よりも厚みが厚い第2の部分とを有する。従って、導電部3は表面(導電層の外表面)に突起3aを有する。複数の突起1a,3aを除く部分が、導電部3の上記第1の部分である。複数の突起1a,3aは、導電部3の厚みが厚い上記第2の部分である。 The conductive portion 3 has a first portion and a second portion that is thicker than the first portion. Accordingly, the conductive portion 3 has a protrusion 3a on the surface (the outer surface of the conductive layer). A portion excluding the plurality of protrusions 1 a and 3 a is the first portion of the conductive portion 3. The plurality of protrusions 1a and 3a are the second portions where the conductive portion 3 is thick.
 図2は、本発明の第2の実施形態に係る導電性粒子を示す断面図である。 FIG. 2 is a cross-sectional view showing conductive particles according to the second embodiment of the present invention.
 図2に示す導電性粒子1Aは、基材粒子2と、基材粒子2の表面上に配置された導電部3Aとを有する。導電部3Aは導電層である。導電性粒子1と導電性粒子1Aとでは、芯物質4の有無のみが相違している。導電性粒子1Aは、芯物質を有する。 2 has a base particle 2 and a conductive portion 3A disposed on the surface of the base particle 2. The conductive particle 1A shown in FIG. The conductive portion 3A is a conductive layer. Only the presence or absence of the core substance 4 is different between the conductive particles 1 and the conductive particles 1A. The conductive particles 1A have a core substance.
 導電性粒子1Aは、基材粒子2の表面上に複数の芯物質4を有する。導電部3Aは、基材粒子2と芯物質4とを被覆している。芯物質4を導電部3Aが被覆していることにより、導電性粒子1Aは表面に複数の突起1Aaを有し、導電部3Aが外表面に複数の突起3Aaを有する。芯物質4により導電部3Aの表面が隆起されており、複数の突起1Aaが形成されている。 The conductive particle 1 </ b> A has a plurality of core substances 4 on the surface of the base particle 2. The conductive portion 3 </ b> A covers the base particle 2 and the core substance 4. By covering the core material 4 with the conductive portion 3A, the conductive particles 1A have a plurality of protrusions 1Aa on the surface, and the conductive portion 3A has a plurality of protrusions 3Aa on the outer surface. The surface of the conductive portion 3A is raised by the core substance 4, and a plurality of protrusions 1Aa are formed.
 導電性粒子1Aのように、突起1Aa,3Aaを形成するために、芯物質を用いてもよいが、芯物質を用いないことが好ましい。 A core material may be used to form the protrusions 1Aa and 3Aa like the conductive particles 1A, but it is preferable not to use a core material.
 図3は、本発明の第3の実施形態に係る導電性粒子を示す断面図である。 FIG. 3 is a cross-sectional view showing conductive particles according to the third embodiment of the present invention.
 図3に示す導電性粒子1Bは、基材粒子2Aと、基材粒子2Aの表面上に配置された導電部3Bと、絶縁性物質5とを有する。導電部3Bは導電層である。導電部3Bは、基材粒子2Aの表面上に配置された第1の導電部3Bxと、第1の導電部3Bxの表面上に配置された第2の導電部3Byとを有する。 3 has a base particle 2A, a conductive portion 3B disposed on the surface of the base particle 2A, and an insulating substance 5. The conductive particle 1B shown in FIG. The conductive part 3B is a conductive layer. The conductive part 3B has a first conductive part 3Bx disposed on the surface of the base particle 2A and a second conductive part 3By disposed on the surface of the first conductive part 3Bx.
 基材粒子2Aは、有機無機ハイブリッド粒子である。基材粒子2Aは、有機コア2Axと、有機コア2Axの表面上に配置された無機シェル2Ayとを有する。 The base particle 2A is an organic-inorganic hybrid particle. The base particle 2A has an organic core 2Ax and an inorganic shell 2Ay disposed on the surface of the organic core 2Ax.
 導電性粒子1Bは、導電性の表面に突起1Baを有する。導電性粒子1Bは表面に突起1Baを有する。導電部3Bは表面(導電層の外表面)に突起3Baを有する。第2の導電部3Byは、第1の部分と、該第1の部分よりも厚みが厚い第2の部分とを有する。従って、第2の導電部3Byは表面(導電層の外表面)に突起3Byaを有する。複数の突起3Byaを除く部分が、第2の導電部3Byの上記第1の部分である。複数の突起3Byaは、第2の導電部3Byの厚みが厚い上記第2の部分である。 The conductive particles 1B have protrusions 1Ba on the conductive surface. The conductive particles 1B have protrusions 1Ba on the surface. The conductive portion 3B has a protrusion 3Ba on the surface (the outer surface of the conductive layer). The second conductive portion 3By has a first portion and a second portion that is thicker than the first portion. Accordingly, the second conductive portion 3By has the protrusion 3Bya on the surface (the outer surface of the conductive layer). A portion excluding the plurality of protrusions 3Bya is the first portion of the second conductive portion 3By. The plurality of protrusions 3Bya are the second portions where the thickness of the second conductive portion 3By is thick.
 導電性粒子1Bのように、導電部3Bは、多層構造を有していてもよい。さらに、突起1Ba,3Baを形成するために、芯物質4を内層の第1の導電部3Bx上に配置して、外層の第2の導電部3Byにより芯物質4及び第1の導電部3Bxを被覆してもよい。 Like the conductive particles 1B, the conductive portion 3B may have a multilayer structure. Further, in order to form the protrusions 1Ba and 3Ba, the core material 4 is disposed on the first conductive portion 3Bx of the inner layer, and the core material 4 and the first conductive portion 3Bx are separated by the second conductive portion 3By of the outer layer. It may be coated.
 導電性粒子1Bは、導電部3B及び第2の導電部3Byの外表面上に配置された絶縁性物質5を備える。導電部3B及び第2の導電部3Byの外表面の少なくとも一部の領域が、絶縁性物質5により被覆されている。絶縁性物質5は絶縁性を有する材料により形成されており、絶縁性粒子である。このように、本発明に係る導電性粒子は、導電部の外表面上に配置された絶縁性物質を有していてもよい。 The conductive particle 1B includes an insulating material 5 disposed on the outer surfaces of the conductive portion 3B and the second conductive portion 3By. At least a part of the outer surface of the conductive portion 3B and the second conductive portion 3By is covered with the insulating material 5. The insulating substance 5 is made of an insulating material and is an insulating particle. Thus, the electroconductive particle which concerns on this invention may have the insulating substance arrange | positioned on the outer surface of an electroconductive part.
 上記した導電性粒子1,1A,1Bでは、導電部3,3A,3Byが結晶構造を有し、導電部3,3A,3Byにおける突起3a,3Aa,3Byaがある部分と突起3a,3Aa,3Byaがない部分とで、結晶構造が連続している。上記した導電性粒子1,1A,1Bでは、導電部3,3A,3Byにおける結晶子サイズは好ましくは0.1nm以上、好ましくは100nm以下である。 In the conductive particles 1, 1 </ b> A, 1 </ b> B described above, the conductive portions 3, 3 </ b> A, 3 </ b> By have a crystal structure, the conductive portions 3, 3 </ b> A, 3 </ b> By have protrusions 3 a, 3 Aa, 3 Bya and protrusions 3 a, 3 Aa, 3 Bya. The crystal structure is continuous with the part where there is no. In the conductive particles 1, 1A, 1B described above, the crystallite size in the conductive portions 3, 3A, 3By is preferably 0.1 nm or more, and preferably 100 nm or less.
 以下、導電性粒子の他の詳細を説明する。 Hereinafter, other details of the conductive particles will be described.
 [基材粒子]
 上記基材粒子としては、樹脂粒子、金属粒子を除く無機粒子、有機無機ハイブリッド粒子及び金属粒子等が挙げられる。上記基材粒子は、金属粒子を除く基材粒子であることが好ましく、樹脂粒子、金属粒子を除く無機粒子又は有機無機ハイブリッド粒子であることがより好ましい。上記基材粒子は、コアシェル粒子であってもよい。
[Base material particles]
Examples of the substrate particles include resin particles, inorganic particles excluding metal particles, organic-inorganic hybrid particles, and metal particles. The substrate particles are preferably substrate particles excluding metal particles, and more preferably resin particles, inorganic particles excluding metal particles, or organic-inorganic hybrid particles. The base particles may be core-shell particles.
 上記基材粒子は、樹脂粒子又は有機無機ハイブリッド粒子であることが更に好ましく、樹脂粒子であってもよく、有機無機ハイブリッド粒子であってもよい。これらの好ましい基材粒子の使用により、電極間の電気的な接続により一層適した導電性粒子が得られる。 The base material particles are more preferably resin particles or organic-inorganic hybrid particles, and may be resin particles or organic-inorganic hybrid particles. By using these preferable base particles, conductive particles more suitable for electrical connection between the electrodes can be obtained.
 上記導電性粒子を用いて電極間を接続する際には、上記導電性粒子を電極間に配置した後、圧着することにより上記導電性粒子を圧縮させる。基材粒子が樹脂粒子又は有機無機ハイブリッド粒子であると、上記圧着の際に上記導電性粒子が変形しやすく、導電性粒子と電極との接触面積が大きくなる。このため、電極間の接続抵抗がより一層低くなる。 When connecting the electrodes using the conductive particles, the conductive particles are compressed by placing the conductive particles between the electrodes and then pressing them. When the substrate particles are resin particles or organic-inorganic hybrid particles, the conductive particles are easily deformed during the pressure bonding, and the contact area between the conductive particles and the electrode is increased. For this reason, the connection resistance between electrodes becomes still lower.
 上記樹脂粒子を形成するための樹脂として、種々の有機物が好適に用いられる。上記樹脂粒子を形成するための樹脂としては、例えば、ポリエチレン、ポリプロピレン、ポリスチレン、ポリ塩化ビニル、ポリ塩化ビニリデン、ポリイソブチレン、ポリブタジエン等のポリオレフィン樹脂;ポリメチルメタクリレート、ポリメチルアクリレート等のアクリル樹脂;ポリアルキレンテレフタレート、ポリカーボネート、ポリアミド、フェノールホルムアルデヒド樹脂、メラミンホルムアルデヒド樹脂、ベンゾグアナミンホルムアルデヒド樹脂、尿素ホルムアルデヒド樹脂、フェノール樹脂、メラミン樹脂、ベンゾグアナミン樹脂、尿素樹脂、エポキシ樹脂、不飽和ポリエステル樹脂、飽和ポリエステル樹脂、ポリスルホン、ポリフェニレンオキサイド、ポリアセタール、ポリイミド、ポリアミドイミド、ポリエーテルエーテルケトン、ポリエーテルスルホン、及び、エチレン性不飽和基を有する種々の重合性単量体を1種もしくは2種以上重合させて得られる重合体等が挙げられる。導電材料に適した任意の圧縮時の物性を有する樹脂粒子を設計及び合成することができ、かつ基材粒子の硬度を好適な範囲に容易に制御できるので、上記樹脂粒子を形成するための樹脂は、エチレン性不飽和基を複数有する重合性単量体を1種又は2種以上重合させた重合体であることが好ましい。 Various organic substances are suitably used as the resin for forming the resin particles. Examples of the resin for forming the resin particles include polyolefin resins such as polyethylene, polypropylene, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyisobutylene, and polybutadiene; acrylic resins such as polymethyl methacrylate and polymethyl acrylate; Alkylene terephthalate, polycarbonate, polyamide, phenol formaldehyde resin, melamine formaldehyde resin, benzoguanamine formaldehyde resin, urea formaldehyde resin, phenol resin, melamine resin, benzoguanamine resin, urea resin, epoxy resin, unsaturated polyester resin, saturated polyester resin, polysulfone, polyphenylene Oxide, polyacetal, polyimide, polyamideimide, polyether ether Tons, polyethersulfone, and polymers such as obtained by a variety of polymerizable monomer having an ethylenically unsaturated group is polymerized with one or more thereof. Resin for forming the resin particles can be designed and synthesized, and the hardness of the base particles can be easily controlled within a suitable range, which is suitable for conductive materials and having physical properties at the time of compression. Is preferably a polymer obtained by polymerizing one or more polymerizable monomers having a plurality of ethylenically unsaturated groups.
 上記樹脂粒子を、エチレン性不飽和基を有する単量体を重合させて得る場合には、上記エチレン性不飽和基を有する単量体としては、非架橋性の単量体と架橋性の単量体とが挙げられる。 When the resin particles are obtained by polymerizing a monomer having an ethylenically unsaturated group, the monomer having the ethylenically unsaturated group may be a non-crosslinkable monomer or a crosslinkable monomer. And a polymer.
 上記非架橋性の単量体としては、例えば、スチレン、α-メチルスチレン等のスチレン系単量体;(メタ)アクリル酸、マレイン酸、無水マレイン酸等のカルボキシル基含有単量体;メチル(メタ)アクリレート、エチル(メタ)アクリレート、プロピル(メタ)アクリレート、ブチル(メタ)アクリレート、2-エチルヘキシル(メタ)アクリレート、ラウリル(メタ)アクリレート、セチル(メタ)アクリレート、ステアリル(メタ)アクリレート、シクロヘキシル(メタ)アクリレート、イソボルニル(メタ)アクリレート等のアルキル(メタ)アクリレート類;2-ヒドロキシエチル(メタ)アクリレート、グリセロール(メタ)アクリレート、ポリオキシエチレン(メタ)アクリレート、グリシジル(メタ)アクリレート等の酸素原子含有(メタ)アクリレート類;(メタ)アクリロニトリル等のニトリル含有単量体;メチルビニルエーテル、エチルビニルエーテル、プロピルビニルエーテル等のビニルエーテル類;酢酸ビニル、酪酸ビニル、ラウリン酸ビニル、ステアリン酸ビニル等の酸ビニルエステル類;エチレン、プロピレン、イソプレン、ブタジエン等の不飽和炭化水素;トリフルオロメチル(メタ)アクリレート、ペンタフルオロエチル(メタ)アクリレート、塩化ビニル、フッ化ビニル、クロルスチレン等のハロゲン含有単量体等が挙げられる。 Examples of the non-crosslinkable monomer include styrene monomers such as styrene and α-methylstyrene; carboxyl group-containing monomers such as (meth) acrylic acid, maleic acid, and maleic anhydride; (Meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, lauryl (meth) acrylate, cetyl (meth) acrylate, stearyl (meth) acrylate, cyclohexyl ( Alkyl (meth) acrylates such as meth) acrylate and isobornyl (meth) acrylate; acids such as 2-hydroxyethyl (meth) acrylate, glycerol (meth) acrylate, polyoxyethylene (meth) acrylate and glycidyl (meth) acrylate Atom-containing (meth) acrylates; Nitrile-containing monomers such as (meth) acrylonitrile; Vinyl ethers such as methyl vinyl ether, ethyl vinyl ether and propyl vinyl ether; Vinyl acetates such as vinyl acetate, vinyl butyrate, vinyl laurate and vinyl stearate Esters; Unsaturated hydrocarbons such as ethylene, propylene, isoprene and butadiene; Halogen-containing monomers such as trifluoromethyl (meth) acrylate, pentafluoroethyl (meth) acrylate, vinyl chloride, vinyl fluoride and chlorostyrene Is mentioned.
 上記架橋性の単量体としては、例えば、テトラメチロールメタンテトラ(メタ)アクリレート、テトラメチロールメタントリ(メタ)アクリレート、テトラメチロールメタンジ(メタ)アクリレート、トリメチロールプロパントリ(メタ)アクリレート、ジペンタエリスリトールヘキサ(メタ)アクリレート、ジペンタエリスリトールペンタ(メタ)アクリレート、グリセロールトリ(メタ)アクリレート、グリセロールジ(メタ)アクリレート、(ポリ)エチレングリコールジ(メタ)アクリレート、(ポリ)プロピレングリコールジ(メタ)アクリレート、(ポリ)テトラメチレングリコールジ(メタ)アクリレート、1,4-ブタンジオールジ(メタ)アクリレート等の多官能(メタ)アクリレート類;トリアリル(イソ)シアヌレート、トリアリルトリメリテート、ジビニルベンゼン、ジアリルフタレート、ジアリルアクリルアミド、ジアリルエーテル、γ-(メタ)アクリロキシプロピルトリメトキシシラン、トリメトキシシリルスチレン、ビニルトリメトキシシラン等のシラン含有単量体等が挙げられる。 Examples of the crosslinkable monomer include tetramethylolmethane tetra (meth) acrylate, tetramethylolmethane tri (meth) acrylate, tetramethylolmethane di (meth) acrylate, trimethylolpropane tri (meth) acrylate, and dipenta Erythritol hexa (meth) acrylate, dipentaerythritol penta (meth) acrylate, glycerol tri (meth) acrylate, glycerol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) Polyfunctional (meth) acrylates such as acrylate, (poly) tetramethylene glycol di (meth) acrylate, 1,4-butanediol di (meth) acrylate; triallyl (iso) cyanure And silane-containing monomers such as divinylbenzene, diallyl phthalate, diallylacrylamide, diallyl ether, γ- (meth) acryloxypropyltrimethoxysilane, trimethoxysilylstyrene, vinyltrimethoxysilane, etc. Can be mentioned.
 上記エチレン性不飽和基を有する重合性単量体を、公知の方法により重合させることで、上記樹脂粒子を得ることができる。この方法としては、例えば、ラジカル重合開始剤の存在下で懸濁重合する方法、並びに非架橋の種粒子を用いてラジカル重合開始剤とともに単量体を膨潤させて重合する方法等が挙げられる。 The resin particles can be obtained by polymerizing the polymerizable monomer having an ethylenically unsaturated group by a known method. Examples of this method include a method of suspension polymerization in the presence of a radical polymerization initiator, and a method of polymerizing by swelling a monomer together with a radical polymerization initiator using non-crosslinked seed particles.
 上記基材粒子が金属粒子を除く無機粒子又は有機無機ハイブリッド粒子である場合に、上記基材粒子を形成するための無機物としては、シリカ、アルミナ、チタン酸バリウム、ジルコニア及びカーボンブラック等が挙げられる。上記無機物は金属ではないことが好ましい。上記シリカにより形成された粒子としては特に限定されないが、例えば、加水分解性のアルコキシシリル基を2つ以上持つケイ素化合物を加水分解して架橋重合体粒子を形成した後に、必要に応じて焼成を行うことにより得られる粒子が挙げられる。上記有機無機ハイブリッド粒子としては、例えば、架橋したアルコキシシリルポリマーとアクリル樹脂とにより形成された有機無機ハイブリッド粒子等が挙げられる。 In the case where the substrate particles are inorganic particles or organic-inorganic hybrid particles excluding metal particles, examples of the inorganic material for forming the substrate particles include silica, alumina, barium titanate, zirconia, and carbon black. . The inorganic substance is preferably not a metal. The particles formed by the silica are not particularly limited. For example, after forming a crosslinked polymer particle by hydrolyzing a silicon compound having two or more hydrolyzable alkoxysilyl groups, firing may be performed as necessary. The particle | grains obtained by performing are mentioned. Examples of the organic / inorganic hybrid particles include organic / inorganic hybrid particles formed of a crosslinked alkoxysilyl polymer and an acrylic resin.
 上記有機無機ハイブリッド粒子は、コアと、該コアの表面上に配置されたシェルとを有するコアシェル型の有機無機ハイブリッド粒子であることが好ましい。上記コアが有機コアであることが好ましい。上記シェルが無機シェルであることが好ましい。電極間の接続抵抗を効果的に低くする観点からは、上記基材粒子は、有機コアと上記有機コアの表面上に配置された無機シェルとを有する有機無機ハイブリッド粒子であることが好ましい。 The organic-inorganic hybrid particles are preferably core-shell type organic-inorganic hybrid particles having a core and a shell disposed on the surface of the core. The core is preferably an organic core. The shell is preferably an inorganic shell. From the viewpoint of effectively reducing the connection resistance between the electrodes, the base material particles are preferably organic-inorganic hybrid particles having an organic core and an inorganic shell disposed on the surface of the organic core.
 上記有機コアを形成するための材料としては、上述した樹脂粒子を形成するための樹脂等が挙げられる。 Examples of the material for forming the organic core include the resin for forming the resin particles described above.
 上記無機シェルを形成するための材料としては、上述した基材粒子を形成するための無機物が挙げられる。上記無機シェルを形成するための材料は、シリカであることが好ましい。上記無機シェルは、上記コアの表面上で、金属アルコキシドをゾルゲル法によりシェル状物とした後、該シェル状物を焼成させることにより形成されていることが好ましい。上記金属アルコキシドはシランアルコキシドであることが好ましい。上記無機シェルはシランアルコキシドにより形成されていることが好ましい。 Examples of the material for forming the inorganic shell include inorganic substances for forming the above-described base material particles. The material for forming the inorganic shell is preferably silica. The inorganic shell is preferably formed on the surface of the core by forming a metal alkoxide into a shell-like material by a sol-gel method and then firing the shell-like material. The metal alkoxide is preferably a silane alkoxide. The inorganic shell is preferably formed of a silane alkoxide.
 上記基材粒子が金属粒子である場合に、該金属粒子を形成するための金属としては、銀、銅、ニッケル、ケイ素、金及びチタン等が挙げられる。但し、上記基材粒子は金属粒子ではないことが好ましい。 When the substrate particles are metal particles, examples of the metal for forming the metal particles include silver, copper, nickel, silicon, gold, and titanium. However, the substrate particles are preferably not metal particles.
 上記基材粒子の粒子径は、好ましくは0.1μm以上、より好ましくは0.5μm以上、更に好ましくは2μm以上、好ましくは30μm以下、より好ましくは10μm以下である。上記基材粒子の粒子径は、5μm以下であってもよく、3μm以下であってもよい。上記基材粒子の粒子径が上記下限以上及び上記上限以下であると、電極間の間隔が小さくなり、かつ導電部の厚みを厚くしても、小さい導電性粒子が得られる。 The particle diameter of the substrate particles is preferably 0.1 μm or more, more preferably 0.5 μm or more, further preferably 2 μm or more, preferably 30 μm or less, more preferably 10 μm or less. The particle diameter of the substrate particles may be 5 μm or less, or 3 μm or less. When the particle diameter of the substrate particles is not less than the above lower limit and not more than the above upper limit, even when the distance between the electrodes is small and the thickness of the conductive portion is increased, small conductive particles can be obtained.
 上記基材粒子の粒子径は、基材粒子が真球状である場合には、直径を示し、基材粒子が真球状ではない場合には、最大径を示す。 The particle diameter of the substrate particles indicates a diameter when the substrate particles are spherical, and indicates a maximum diameter when the substrate particles are not spherical.
 [導電部]
 上記導電部の上記突起が無い部分の厚みは、好ましくは0.005μm以上、より好ましくは0.01μm以上、好ましくは1μm以下、より好ましくは0.3μm以下である。上記導電部の上記突起が無い部分の厚みが上記下限以上及び上記上限以下であると、充分な導電性が得られ、かつ導電性粒子が硬くなりすぎずに、電極間の接続の際に導電性粒子が充分に変形する。
[Conductive part]
The thickness of the conductive part without the protrusion is preferably 0.005 μm or more, more preferably 0.01 μm or more, preferably 1 μm or less, more preferably 0.3 μm or less. When the thickness of the portion without the protrusion of the conductive portion is not less than the above lower limit and not more than the above upper limit, sufficient conductivity can be obtained, and the conductive particles do not become too hard and are electrically conductive during connection between the electrodes. The particles are sufficiently deformed.
 上記導電部が複数の層により形成されている場合に、最外層の導電層の上記突起が無い部分の厚みは、特に最外層が金層である場合の金層の厚みは、好ましくは0.001μm以上、より好ましくは0.01μm以上、好ましくは0.5μm以下、より好ましくは0.1μm以下である。上記最外層の導電層の上記突起が無い部分の厚みが上記下限以上及び上記上限以下であると、最外層の導電層による被覆が均一になり、耐腐食性が充分に高くなり、かつ電極間の接続抵抗が充分に低くなる。 When the conductive portion is formed of a plurality of layers, the thickness of the portion of the outermost conductive layer where the protrusions are not present is preferably 0.005, particularly when the outermost layer is a gold layer. It is 001 μm or more, more preferably 0.01 μm or more, preferably 0.5 μm or less, more preferably 0.1 μm or less. When the thickness of the portion of the outermost conductive layer where the protrusion is not present is not less than the lower limit and not more than the upper limit, the coating with the outermost conductive layer becomes uniform, corrosion resistance is sufficiently high, and the distance between the electrodes The connection resistance is sufficiently low.
 上記導電部の上記突起が無い部分の厚みは、例えば透過型電子顕微鏡(TEM)を用いて、導電性粒子の断面を観察することにより測定できる。 The thickness of the conductive part without the protrusion can be measured by observing a cross section of the conductive particle using, for example, a transmission electron microscope (TEM).
 上記基材粒子の表面上に上記導電部を形成する方法としては、無電解めっきにより上記導電部を形成する方法、並びに電気めっきにより上記導電部を形成する方法等が挙げられる。 Examples of the method for forming the conductive part on the surface of the substrate particle include a method for forming the conductive part by electroless plating and a method for forming the conductive part by electroplating.
 上記導電部は、金属を含むことが好ましい。上記導電部の材料である金属は、特に限定されない。該金属としては、例えば、金、銀、銅、白金、パラジウム、亜鉛、鉛、アルミニウム、コバルト、インジウム、ニッケル、クロム、チタン、アンチモン、ビスマス、ゲルマニウム及びカドミウム、並びにこれらの合金等が挙げられる。また、上記金属として、錫ドープ酸化インジウム(ITO)を用いてもよい。これらの金属は、導電部内で合金化していてもよい。但し、上記導電部における結晶化度を上記下限以上及び上記上限以下とするために、適宜の金属が選ばれる。上記金属は1種のみが用いられてもよく、2種以上が併用されてもよい。 The conductive part preferably contains a metal. The metal that is the material of the conductive part is not particularly limited. Examples of the metal include gold, silver, copper, platinum, palladium, zinc, lead, aluminum, cobalt, indium, nickel, chromium, titanium, antimony, bismuth, germanium and cadmium, and alloys thereof. Further, tin-doped indium oxide (ITO) may be used as the metal. These metals may be alloyed in the conductive part. However, an appropriate metal is selected so that the degree of crystallinity in the conductive portion is not less than the above lower limit and not more than the above upper limit. As for the said metal, only 1 type may be used and 2 or more types may be used together.
 電極間の接続抵抗を効果的に低くし、上記導電部における結晶化度をより一層好適な範囲に制御する観点からは、記導電部は、銅又はニッケルを含むことが好ましく、ニッケルを含むことが好ましい。この場合、ニッケルなどの金属は、他の金属と合金化していてもよい。上記導電部の材料は、銅、銅合金、ニッケル又はニッケル合金であることが好ましく、ニッケル又はニッケル合金であることがより好ましい。 From the viewpoint of effectively reducing the connection resistance between the electrodes and controlling the crystallinity in the conductive part to a more suitable range, the conductive part preferably contains copper or nickel, and contains nickel. Is preferred. In this case, a metal such as nickel may be alloyed with another metal. The material of the conductive part is preferably copper, copper alloy, nickel or nickel alloy, and more preferably nickel or nickel alloy.
 外表面に複数の突起を有する上記導電部100重量%中、銅又はニッケルの含有量は好ましくは10重量%以上、より好ましくは25重量%以上、更に好ましくは40重量%以上、好ましくは100重量%(全量)以下である。上記導電部におけるニッケルの含有量が上記下限以上、及び上記上限以下であることが好ましい。 In 100% by weight of the conductive part having a plurality of protrusions on the outer surface, the content of copper or nickel is preferably 10% by weight or more, more preferably 25% by weight or more, still more preferably 40% by weight or more, preferably 100% by weight. % (Total amount) or less. It is preferable that the content of nickel in the conductive part is not less than the above lower limit and not more than the above upper limit.
 上記導電部はニッケルを主金属として含むことが好ましい。ニッケルを含む導電部全体100重量%中、ニッケルの含有量は50重量%以上であることが好ましい。ニッケルを含む導電部100重量%中、ニッケルの含有量は好ましくは65重量%以上、より好ましくは80重量%以上、更に好ましくは90重量%以上である。ニッケルの含有量が上記下限以上であると、電極間の接続抵抗がより一層低くなる。 The conductive part preferably contains nickel as a main metal. The content of nickel is preferably 50% by weight or more in 100% by weight of the entire conductive part including nickel. In 100% by weight of the conductive part containing nickel, the content of nickel is preferably 65% by weight or more, more preferably 80% by weight or more, and further preferably 90% by weight or more. When the nickel content is at least the above lower limit, the connection resistance between the electrodes is further reduced.
 電極間の接続抵抗をより一層低くする観点からは、ニッケルを含む導電部はリン又はボロンを含むことが好ましく、リンを含むことがより好ましい。ニッケルを含む導電部全体100重量%中、リンの含有量は好ましくは0重量%を超え、より好ましくは0.1重量%以上、更に好ましくは2重量%以上、特に好ましくは5重量%以上、最も好ましくは10重量%を超え、好ましくは20重量%以下、より好ましくは15重量%以下である。リンの含有量が上記下限以上及び上記上限以下であると、接続抵抗がより一層低くなる。特に、リンの含有量が5重量%以上であると、接続抵抗の信頼性がより一層高くなり、リンの含有量が10重量%を超えると、密着性が向上し、接続抵抗の信頼性がより一層高くなる。 From the viewpoint of further reducing the connection resistance between the electrodes, the conductive portion containing nickel preferably contains phosphorus or boron, and more preferably contains phosphorus. The content of phosphorus is preferably more than 0% by weight, more preferably 0.1% by weight or more, still more preferably 2% by weight or more, particularly preferably 5% by weight or more, in 100% by weight of the entire conductive part including nickel. Most preferably it exceeds 10% by weight, preferably 20% by weight or less, more preferably 15% by weight or less. When the phosphorus content is not less than the above lower limit and not more than the above upper limit, the connection resistance is further lowered. In particular, when the phosphorus content is 5% by weight or more, the reliability of the connection resistance is further increased, and when the phosphorus content exceeds 10% by weight, the adhesion is improved and the reliability of the connection resistance is improved. It gets even higher.
 上記導電部におけるニッケル、ボロン及びリンの含有量を制御する方法としては、例えば、無電解ニッケルめっきにより導電部を形成する際に、ニッケルめっき液のpHを制御する方法、無電解ニッケルめっきにより導電部を形成する際に、ボロン含有還元剤の濃度を調整する方法、無電解ニッケルめっきにより導電部を形成する際に、リン含有還元剤の濃度を調整する方法、並びにニッケルめっき液中のニッケル濃度を調整する方法等が挙げられる。 As a method for controlling the content of nickel, boron and phosphorus in the conductive part, for example, when forming the conductive part by electroless nickel plating, a method for controlling the pH of the nickel plating solution, conductive by electroless nickel plating. A method for adjusting the concentration of a boron-containing reducing agent when forming a part, a method for adjusting the concentration of a phosphorus-containing reducing agent when forming a conductive part by electroless nickel plating, and a nickel concentration in a nickel plating solution The method etc. of adjusting are mentioned.
 無電解めっきにより形成する方法では、一般的に、触媒化工程と、無電解めっき工程とが行われる。以下、無電解めっきにより、樹脂粒子の表面に、ニッケルとリンとを含む合金めっき層を形成する方法の一例を説明する。 In the method of forming by electroless plating, generally, a catalytic step and an electroless plating step are performed. Hereinafter, an example of a method for forming an alloy plating layer containing nickel and phosphorus on the surface of resin particles by electroless plating will be described.
 上記触媒化工程では、無電解めっきによりめっき層を形成するための起点となる触媒を、樹脂粒子の表面に形成させる。 In the catalyzing step, a catalyst serving as a starting point for forming a plating layer by electroless plating is formed on the surface of the resin particles.
 上記触媒を樹脂粒子の表面に形成させる方法としては、例えば、塩化パラジウムと塩化スズとを含む溶液に、樹脂粒子を添加した後、酸溶液又はアルカリ溶液により樹脂粒子の表面を活性化させて、樹脂粒子の表面にパラジウムを析出させる方法、並びに硫酸パラジウムとアミノピリジンとを含有する溶液に、樹脂粒子を添加した後、還元剤を含む溶液により樹脂粒子の表面を活性化させて、樹脂粒子の表面にパラジウムを析出させる方法等が挙げられる。上記還元剤として、リン含有還元剤が好適に用いられる。また、上記還元剤として、ボロン含有還元剤を用いることで、ボロンを含む導電層を形成できる。 As a method of forming the catalyst on the surface of the resin particles, for example, after adding the resin particles to a solution containing palladium chloride and tin chloride, the surface of the resin particles is activated with an acid solution or an alkali solution, A method of depositing palladium on the surface of the resin particles, and after adding the resin particles to a solution containing palladium sulfate and aminopyridine, the surface of the resin particles is activated by a solution containing a reducing agent. Examples thereof include a method of depositing palladium on the surface. As the reducing agent, a phosphorus-containing reducing agent is preferably used. In addition, a conductive layer containing boron can be formed by using a boron-containing reducing agent as the reducing agent.
 上記無電解めっき工程では、ニッケル含有化合物及び上記リン含有還元剤を含むニッケルめっき浴が好適に用いられる。ニッケルめっき浴中に樹脂粒子を浸漬することにより、触媒が表面に形成された樹脂粒子の表面に、ニッケルを析出させることができ、ニッケルとリンとを含む導電層を形成できる。 In the electroless plating step, a nickel plating bath containing a nickel-containing compound and the phosphorus-containing reducing agent is preferably used. By immersing the resin particles in the nickel plating bath, nickel can be deposited on the surface of the resin particles on which the catalyst is formed, and a conductive layer containing nickel and phosphorus can be formed.
 上記ニッケル含有化合物としては、硫酸ニッケル及び塩化ニッケル等が挙げられる。上記ニッケル含有化合物は、ニッケル塩であることが好ましい。 Examples of the nickel-containing compound include nickel sulfate and nickel chloride. The nickel-containing compound is preferably a nickel salt.
 上記リン含有還元剤としては、次亜リン酸ナトリウム等が挙げられる。上記ボロン含有還元剤としては、ジメチルアミンボラン、水素化ホウ素ナトリウム及び水素化ホウ素カリウム等が挙げられる。 Examples of the phosphorus-containing reducing agent include sodium hypophosphite. Examples of the boron-containing reducing agent include dimethylamine borane, sodium borohydride, and potassium borohydride.
 [芯物質]
 上記芯物質が上記導電部中に埋め込まれていることによって、上記導電部が外表面に複数の突起を有するようにすることが容易である。但し、導電性粒子及び導電部の表面に突起を形成するために、芯物質を必ずしも用いなくてもよく、芯物質を用いないことが好ましい。上記導電性粒子は、上記導電部の内部及び内側に、上記導電部の外表面を隆起させるための芯物質を有さないことが好ましい。上記導電部が、上記導電部の内部及び内側に、上記導電部の外表面を隆起させるための芯物質を含まないことが好ましい。芯物質を用いずに、球状の基材粒子の表面上に、突起を外表面に有する導電部が形成されていることが好ましい。
[Core material]
Since the core substance is embedded in the conductive portion, it is easy for the conductive portion to have a plurality of protrusions on the outer surface. However, in order to form protrusions on the surfaces of the conductive particles and the conductive part, the core material is not necessarily used, and it is preferable not to use the core material. It is preferable that the conductive particles do not have a core substance for raising the outer surface of the conductive part inside and inside the conductive part. It is preferable that the conductive part does not include a core material for raising the outer surface of the conductive part inside and inside the conductive part. It is preferable that a conductive part having protrusions on the outer surface is formed on the surface of the spherical base particle without using a core substance.
 上記導電性粒子の表面に突起を形成する方法としては、基材粒子の表面に芯物質を付着させた後、無電解めっきにより導電部を形成する方法、並びに基材粒子の表面に無電解めっきにより導電部を形成した後、芯物質を付着させ、更に無電解めっきにより導電部を形成する方法等が挙げられる。上記突起を形成する他の方法としては、基材粒子の表面上に、第1の導電部を形成した後、該第1の導電部上に芯物質を配置し、次に第2の導電部を形成する方法、並びに基材粒子の表面上に導電部を形成する途中段階で、芯物質を添加する方法等が挙げられる。 As a method for forming protrusions on the surface of the conductive particles, a method of forming a conductive portion by electroless plating after attaching a core substance to the surface of the base particles, and electroless plating on the surface of the base particles Examples include a method of forming a conductive part by, attaching a core substance, and further forming a conductive part by electroless plating. As another method for forming the protrusion, a first conductive part is formed on the surface of the base particle, and then a core substance is disposed on the first conductive part, and then the second conductive part. And a method of adding a core substance in the middle of forming a conductive part on the surface of the base particle.
 上記基材粒子の表面上に芯物質を配置させる方法としては、例えば、基材粒子の分散液中に、芯物質を添加し、基材粒子の表面に芯物質を、例えば、ファンデルワールス力により集積させ、付着させる方法、並びに基材粒子を入れた容器に、芯物質を添加し、容器の回転等による機械的な作用により基材粒子の表面に芯物質を付着させる方法等が挙げられる。なかでも、付着させる芯物質の量を制御しやすいため、分散液中の基材粒子の表面に芯物質を集積させ、付着させる方法が好ましい。 As a method of arranging the core substance on the surface of the base particle, for example, the core substance is added to the dispersion of the base particle, and the core substance is applied to the surface of the base particle, for example, van der Waals force. And a method in which a core substance is added to a container containing base particles, and a core substance is attached to the surface of the base particles by mechanical action such as rotation of the container. . Especially, since the quantity of the core substance to adhere is easy to control, the method of making a core substance accumulate and adhere on the surface of the base particle in a dispersion liquid is preferable.
 上記芯物質の材料としては、導電性物質及び非導電性物質が挙げられる。上記導電性物質としては、例えば、金属、金属の酸化物、黒鉛等の導電性非金属及び導電性ポリマー等が挙げられる。上記導電性ポリマーとしては、ポリアセチレン等が挙げられる。上記非導電性物質としては、シリカ、アルミナ及びジルコニア等が挙げられる。なかでも、酸化膜の貫通効果を高めるには、芯物質が硬い方が好ましい。上記芯物質は金属粒子であることが好ましい。上記芯物質の材料である金属としては、上記導電材料の材料として挙げた金属を適宜使用可能である。 The material of the core substance includes a conductive substance and a non-conductive substance. Examples of the conductive material include conductive non-metals such as metals, metal oxides, and graphite, and conductive polymers. Examples of the conductive polymer include polyacetylene. Examples of the nonconductive material include silica, alumina, and zirconia. Especially, in order to improve the penetration effect of an oxide film, it is preferable that the core substance is hard. The core substance is preferably metal particles. As the metal that is the material of the core substance, the metals mentioned as the material of the conductive material can be used as appropriate.
 上記芯物質の材料の具体例としては、チタン酸バリウム(モース硬度4.5)、ニッケル(モース硬度5)、シリカ(二酸化珪素、モース硬度6~7)、酸化チタン(モース硬度7)、ジルコニア(モース硬度8~9)、アルミナ(モース硬度9)、炭化タングステン(モース硬度9)及びダイヤモンド(モース硬度10)等が挙げられる。上記無機粒子は、ニッケル、シリカ、酸化チタン、ジルコニア、アルミナ、炭化タングステン又はダイヤモンドであることが好ましく、シリカ、酸化チタン、ジルコニア、アルミナ、炭化タングステン又はダイヤモンドであることがより好ましく、酸化チタン、ジルコニア、アルミナ、炭化タングステン又はダイヤモンドであることが更に好ましく、ジルコニア、アルミナ、炭化タングステン又はダイヤモンドであることが特に好ましい。上記芯物質の材料のモース硬度は好ましくは5以上、より好ましくは6以上、更に好ましくは7以上、特に好ましくは7.5以上である。 Specific examples of the core material include barium titanate (Mohs hardness 4.5), nickel (Mohs hardness 5), silica (silicon dioxide, Mohs hardness 6-7), titanium oxide (Mohs hardness 7), zirconia. (Mohs hardness 8-9), alumina (Mohs hardness 9), tungsten carbide (Mohs hardness 9), diamond (Mohs hardness 10), and the like. The inorganic particles are preferably nickel, silica, titanium oxide, zirconia, alumina, tungsten carbide or diamond, more preferably silica, titanium oxide, zirconia, alumina, tungsten carbide or diamond, titanium oxide, zirconia. Alumina, tungsten carbide or diamond is more preferable, and zirconia, alumina, tungsten carbide or diamond is particularly preferable. The Mohs hardness of the core material is preferably 5 or more, more preferably 6 or more, still more preferably 7 or more, and particularly preferably 7.5 or more.
 上記芯物質の形状は特に限定されない。芯物質の形状は塊状であることが好ましい。芯物質としては、例えば、粒子状の塊、複数の微小粒子が凝集した凝集塊、及び不定形の塊等が挙げられる。 The shape of the core substance is not particularly limited. The shape of the core substance is preferably a lump. Examples of the core substance include a particulate lump, an agglomerate in which a plurality of fine particles are aggregated, and an irregular lump.
 上記金属としては、例えば、金、銀、銅、白金、亜鉛、鉄、鉛、錫、アルミニウム、コバルト、インジウム、ニッケル、クロム、チタン、アンチモン、ビスマス、ゲルマニウム及びカドミウム等の金属、並びに錫-鉛合金、錫-銅合金、錫-銀合金、錫-鉛-銀合金及び炭化タングステン等の2種類以上の金属で構成される合金等が挙げられる。なかでも、ニッケル、銅、銀又は金が好ましい。上記芯物質を形成するための金属は、上記導電部を形成するための金属と同じであってもよく、異なっていてもよい。上記芯物質を形成するための金属は、上記導電部を形成するための金属を含むことが好ましい。上記芯物質を形成するための金属は、ニッケルを含むことが好ましい。上記芯物質を形成するための金属は、ニッケルを含むことが好ましい。 Examples of the metal include gold, silver, copper, platinum, zinc, iron, lead, tin, aluminum, cobalt, indium, nickel, chromium, titanium, antimony, bismuth, germanium and cadmium, and tin-lead. Examples thereof include alloys composed of two or more metals such as alloys, tin-copper alloys, tin-silver alloys, tin-lead-silver alloys, and tungsten carbide. Of these, nickel, copper, silver or gold is preferable. The metal for forming the core substance may be the same as or different from the metal for forming the conductive part. The metal for forming the core substance preferably includes a metal for forming the conductive part. The metal for forming the core substance preferably contains nickel. The metal for forming the core substance preferably contains nickel.
 上記芯物質の形状は特に限定されない。芯物質の形状は塊状であることが好ましい。芯物質としては、例えば、粒子状の塊、複数の微小粒子が凝集した凝集塊、及び不定形の塊等が挙げられる。 The shape of the core substance is not particularly limited. The shape of the core substance is preferably a lump. Examples of the core substance include a particulate lump, an agglomerate in which a plurality of fine particles are aggregated, and an irregular lump.
 上記芯物質の平均径(平均粒子径)は、好ましくは0.001μm以上、より好ましくは0.05μm以上、好ましくは0.9μm以下、より好ましくは0.2μm以下である。上記芯物質の平均径が上記下限以上及び上記上限以下であると、電極間の接続抵抗が効果的に低くなる。 The average diameter (average particle diameter) of the core substance is preferably 0.001 μm or more, more preferably 0.05 μm or more, preferably 0.9 μm or less, more preferably 0.2 μm or less. When the average diameter of the core substance is not less than the above lower limit and not more than the above upper limit, the connection resistance between the electrodes is effectively reduced.
 上記芯物質の「平均径(平均粒子径)」は、数平均径(数平均粒子径)を示す。芯物質の平均径は、任意の芯物質50個を電子顕微鏡又は光学顕微鏡にて観察し、平均値を算出することにより求められる。 The “average diameter (average particle diameter)” of the core substance indicates a number average diameter (number average particle diameter). The average diameter of the core material is obtained by observing 50 arbitrary core materials with an electron microscope or an optical microscope and calculating an average value.
 [絶縁性物質]
 本発明に係る導電性粒子は、上記導電部の外表面上に配置された絶縁性物質を備えることが好ましい。この場合には、導電性粒子を電極間の接続に用いると、隣接する電極間の短絡を防止できる。具体的には、複数の導電性粒子が接触したときに、複数の電極間に絶縁性物質が存在するので、上下の電極間ではなく横方向に隣り合う電極間の短絡を防止できる。なお、電極間の接続の際に、2つの電極で導電性粒子を加圧することにより、導電性粒子の導電部と電極との間の絶縁性物質を容易に排除できる。導電部が外表面に複数の突起を有するので、導電性粒子の導電部と電極との間の絶縁性物質を容易に排除できる。
[Insulating material]
It is preferable that the electroconductive particle which concerns on this invention is equipped with the insulating substance arrange | positioned on the outer surface of the said electroconductive part. In this case, when the conductive particles are used for connection between the electrodes, a short circuit between adjacent electrodes can be prevented. Specifically, when a plurality of conductive particles are in contact with each other, an insulating material is present between the plurality of electrodes, so that it is possible to prevent a short circuit between electrodes adjacent in the lateral direction instead of between the upper and lower electrodes. It should be noted that the insulating material between the conductive portion of the conductive particles and the electrode can be easily removed by pressurizing the conductive particles with the two electrodes when connecting the electrodes. Since the conductive portion has a plurality of protrusions on the outer surface, the insulating material between the conductive portion of the conductive particles and the electrode can be easily excluded.
 電極間の圧着時に上記絶縁性物質をより一層容易に排除できることから、上記絶縁性物質は、絶縁性粒子であることが好ましい。 The insulating substance is preferably an insulating particle because the insulating substance can be more easily removed during crimping between the electrodes.
 上記絶縁性物質の材料である絶縁性樹脂の具体例としては、ポリオレフィン類、(メタ)アクリレート重合体、(メタ)アクリレート共重合体、ブロックポリマー、熱可塑性樹脂、熱可塑性樹脂の架橋物、熱硬化性樹脂及び水溶性樹脂等が挙げられる。 Specific examples of the insulating resin that is the material of the insulating material include polyolefins, (meth) acrylate polymers, (meth) acrylate copolymers, block polymers, thermoplastic resins, crosslinked thermoplastic resins, heat Examples thereof include curable resins and water-soluble resins.
 上記ポリオレフィン類としては、ポリエチレン、エチレン-酢酸ビニル共重合体及びエチレン-アクリル酸エステル共重合体等が挙げられる。上記(メタ)アクリレート重合体としては、ポリメチル(メタ)アクリレート、ポリエチル(メタ)アクリレート及びポリブチル(メタ)アクリレート等が挙げられる。上記ブロックポリマーとしては、ポリスチレン、スチレン-アクリル酸エステル共重合体、SB型スチレン-ブタジエンブロック共重合体、及びSBS型スチレン-ブタジエンブロック共重合体、並びにこれらの水素添加物等が挙げられる。上記熱可塑性樹脂としては、ビニル重合体及びビニル共重合体等が挙げられる。上記熱硬化性樹脂としては、エポキシ樹脂、フェノール樹脂及びメラミン樹脂等が挙げられる。上記水溶性樹脂としては、ポリビニルアルコール、ポリアクリル酸、ポリアクリルアミド、ポリビニルピロリドン、ポリエチレンオキシド及びメチルセルロース等が挙げられる。なかでも、水溶性樹脂が好ましく、ポリビニルアルコールがより好ましい。 Examples of the polyolefins include polyethylene, ethylene-vinyl acetate copolymer, and ethylene-acrylic ester copolymer. Examples of the (meth) acrylate polymer include polymethyl (meth) acrylate, polyethyl (meth) acrylate, and polybutyl (meth) acrylate. Examples of the block polymer include polystyrene, styrene-acrylate copolymer, SB type styrene-butadiene block copolymer, SBS type styrene-butadiene block copolymer, and hydrogenated products thereof. Examples of the thermoplastic resin include vinyl polymers and vinyl copolymers. As said thermosetting resin, an epoxy resin, a phenol resin, a melamine resin, etc. are mentioned. Examples of the water-soluble resin include polyvinyl alcohol, polyacrylic acid, polyacrylamide, polyvinyl pyrrolidone, polyethylene oxide, and methyl cellulose. Of these, water-soluble resins are preferable, and polyvinyl alcohol is more preferable.
 上記導電部の表面上に絶縁性物質を配置する方法としては、化学的方法、及び物理的もしくは機械的方法等が挙げられる。上記化学的方法としては、例えば、界面重合法、粒子存在下での懸濁重合法及び乳化重合法等が挙げられる。上記物理的もしくは機械的方法としては、スプレードライ、ハイブリダイゼーション、静電付着法、噴霧法、ディッピング及び真空蒸着による方法等が挙げられる。なかでも、絶縁性物質が脱離し難いことから、上記導電部の表面に、化学結合を介して上記絶縁性物質を配置する方法が好ましい。 As a method of disposing an insulating substance on the surface of the conductive part, there are a chemical method, a physical or mechanical method, and the like. Examples of the chemical method include an interfacial polymerization method, a suspension polymerization method in the presence of particles, and an emulsion polymerization method. Examples of the physical or mechanical method include spray drying, hybridization, electrostatic adhesion, spraying, dipping, and vacuum deposition. In particular, since the insulating substance is difficult to be detached, a method in which the insulating substance is disposed on the surface of the conductive portion via a chemical bond is preferable.
 上記導電部の外表面、及び絶縁性粒子の表面はそれぞれ、反応性官能基を有する化合物によって被覆されていてもよい。導電部の外表面と絶縁性粒子の表面とは、直接化学結合していなくてもよく、反応性官能基を有する化合物によって間接的に化学結合していてもよい。導電部の外表面にカルボキシル基を導入した後、該カルボキシル基がポリエチレンイミンなどの高分子電解質を介して絶縁性粒子の表面の官能基と化学結合していても構わない。 The outer surface of the conductive part and the surface of the insulating particles may each be coated with a compound having a reactive functional group. The outer surface of the conductive part and the surface of the insulating particles may not be directly chemically bonded, but may be indirectly chemically bonded by a compound having a reactive functional group. After introducing a carboxyl group into the outer surface of the conductive part, the carboxyl group may be chemically bonded to a functional group on the surface of the insulating particle through a polymer electrolyte such as polyethyleneimine.
 上記絶縁性物質の平均径(平均粒子径)は、導電性粒子の粒子径及び導電性粒子の用途等によって適宜選択できる。上記絶縁性物質の平均径(平均粒子径)は好ましくは0.005μm以上、より好ましくは0.01μm以上、好ましくは1μm以下、より好ましくは0.5μm以下である。絶縁性物質の平均径が上記下限以上であると、導電性粒子がバインダー樹脂中に分散されたときに、複数の導電性粒子における導電部同士が接触し難くなる。絶縁性粒子の平均径が上記上限以下であると、電極間の接続の際に、電極と導電性粒子との間の絶縁性物質を排除するために、圧力を高くしすぎる必要がなくなり、高温に加熱する必要もなくなる。 The average diameter (average particle diameter) of the insulating material can be appropriately selected depending on the particle diameter of the conductive particles, the use of the conductive particles, and the like. The average diameter (average particle diameter) of the insulating material is preferably 0.005 μm or more, more preferably 0.01 μm or more, preferably 1 μm or less, more preferably 0.5 μm or less. When the average diameter of the insulating material is equal to or more than the above lower limit, when the conductive particles are dispersed in the binder resin, the conductive portions in the plurality of conductive particles are difficult to contact each other. When the average diameter of the insulating particles is not more than the above upper limit, it is not necessary to make the pressure too high in order to eliminate the insulating material between the electrodes and the conductive particles when the electrodes are connected, There is no need for heating.
 上記絶縁性物質の「平均径(平均粒子径)」は、数平均径(数平均粒子径)を示す。絶縁性物質の平均径は、粒度分布測定装置等を用いて求められる。 The “average diameter (average particle diameter)” of the insulating material indicates a number average diameter (number average particle diameter). The average diameter of the insulating material is determined using a particle size distribution measuring device or the like.
 (導電材料)
 本発明に係る導電材料は、上述した導電性粒子と、バインダー樹脂とを含む。上記導電性粒子は、バインダー樹脂中に分散されて用いられることが好ましく、バインダー樹脂中に分散されて導電材料として用いられることが好ましい。上記導電材料は、異方性導電材料であることが好ましい。上記導電材料は、電極間の電気的な接続に用いられることが好ましい。上記導電材料は、回路接続材料であることが好ましい。
(Conductive material)
The conductive material according to the present invention includes the conductive particles described above and a binder resin. The conductive particles are preferably used by being dispersed in a binder resin, and are preferably used as a conductive material by being dispersed in a binder resin. The conductive material is preferably an anisotropic conductive material. The conductive material is preferably used for electrical connection between electrodes. The conductive material is preferably a circuit connection material.
 上記バインダー樹脂は特に限定されない。上記バインダー樹脂として、公知の絶縁性の樹脂が用いられる。 The binder resin is not particularly limited. As the binder resin, a known insulating resin is used.
 上記バインダー樹脂としては、例えば、ビニル樹脂、熱可塑性樹脂、硬化性樹脂、熱可塑性ブロック共重合体及びエラストマー等が挙げられる。上記バインダー樹脂は1種のみが用いられてもよく、2種以上が併用されてもよい。 Examples of the binder resin include vinyl resins, thermoplastic resins, curable resins, thermoplastic block copolymers, and elastomers. As for the said binder resin, only 1 type may be used and 2 or more types may be used together.
 上記ビニル樹脂としては、例えば、酢酸ビニル樹脂、アクリル樹脂及びスチレン樹脂等が挙げられる。上記熱可塑性樹脂としては、例えば、ポリオレフィン樹脂、エチレン-酢酸ビニル共重合体及びポリアミド樹脂等が挙げられる。上記硬化性樹脂としては、例えば、エポキシ樹脂、ウレタン樹脂、ポリイミド樹脂及び不飽和ポリエステル樹脂等が挙げられる。なお、上記硬化性樹脂は、常温硬化型樹脂、熱硬化型樹脂、光硬化型樹脂又は湿気硬化型樹脂であってもよい。上記硬化性樹脂は、硬化剤と併用されてもよい。上記熱可塑性ブロック共重合体としては、例えば、スチレン-ブタジエン-スチレンブロック共重合体、スチレン-イソプレン-スチレンブロック共重合体、スチレン-ブタジエン-スチレンブロック共重合体の水素添加物、及びスチレン-イソプレン-スチレンブロック共重合体の水素添加物等が挙げられる。上記エラストマーとしては、例えば、スチレン-ブタジエン共重合ゴム、及びアクリロニトリル-スチレンブロック共重合ゴム等が挙げられる。 Examples of the vinyl resin include vinyl acetate resin, acrylic resin, and styrene resin. Examples of the thermoplastic resin include polyolefin resin, ethylene-vinyl acetate copolymer, and polyamide resin. Examples of the curable resin include an epoxy resin, a urethane resin, a polyimide resin, and an unsaturated polyester resin. The curable resin may be a room temperature curable resin, a thermosetting resin, a photocurable resin, or a moisture curable resin. The curable resin may be used in combination with a curing agent. Examples of the thermoplastic block copolymer include a styrene-butadiene-styrene block copolymer, a styrene-isoprene-styrene block copolymer, a hydrogenated product of a styrene-butadiene-styrene block copolymer, and a styrene-isoprene. -Hydrogenated products of styrene block copolymers. Examples of the elastomer include styrene-butadiene copolymer rubber and acrylonitrile-styrene block copolymer rubber.
 上記導電材料は、上記導電性粒子及び上記バインダー樹脂の他に、例えば、充填剤、増量剤、軟化剤、可塑剤、重合触媒、硬化触媒、着色剤、酸化防止剤、熱安定剤、光安定剤、紫外線吸収剤、滑剤、帯電防止剤及び難燃剤等の各種添加剤を含んでいてもよい。 In addition to the conductive particles and the binder resin, the conductive material includes, for example, a filler, an extender, a softener, a plasticizer, a polymerization catalyst, a curing catalyst, a colorant, an antioxidant, a heat stabilizer, and a light stabilizer. Various additives such as an agent, an ultraviolet absorber, a lubricant, an antistatic agent and a flame retardant may be contained.
 本発明に係る導電材料は、導電ペースト及び導電フィルム等として使用され得る。本発明に係る導電材料が、導電フィルムである場合には、導電性粒子を含む導電フィルムに、導電性粒子を含まないフィルムが積層されていてもよい。上記導電ペーストは、異方性導電ペーストであることが好ましい。上記導電フィルムは、異方性導電フィルムであることが好ましい。 The conductive material according to the present invention can be used as a conductive paste and a conductive film. When the conductive material according to the present invention is a conductive film, a film that does not include conductive particles may be laminated on a conductive film that includes conductive particles. The conductive paste is preferably an anisotropic conductive paste. The conductive film is preferably an anisotropic conductive film.
 上記導電材料100重量%中、上記バインダー樹脂の含有量は好ましくは10重量%以上、より好ましくは30重量%以上、更に好ましくは50重量%以上、特に好ましくは70重量%以上、好ましくは99.99重量%以下、より好ましくは99.9重量%以下である。上記バインダー樹脂の含有量が上記下限以上及び上記上限以下であると、電極間に導電性粒子が効率的に配置され、導電材料により接続された接続対象部材の接続信頼性がより一層高くなる。 In 100% by weight of the conductive material, the content of the binder resin is preferably 10% by weight or more, more preferably 30% by weight or more, still more preferably 50% by weight or more, particularly preferably 70% by weight or more, preferably 99.% or more. It is 99 weight% or less, More preferably, it is 99.9 weight% or less. When the content of the binder resin is not less than the above lower limit and not more than the above upper limit, the conductive particles are efficiently arranged between the electrodes, and the connection reliability of the connection target member connected by the conductive material is further increased.
 上記導電材料100重量%中、上記導電性粒子の含有量は好ましくは0.01重量%以上、より好ましくは0.1重量%以上、好ましくは40重量%以下、より好ましくは20重量%以下、更に好ましくは10重量%以下である。上記導電性粒子の含有量が上記下限以上及び上記上限以下であると、電極間の導通信頼性がより一層高くなる。 In 100% by weight of the conductive material, the content of the conductive particles is preferably 0.01% by weight or more, more preferably 0.1% by weight or more, preferably 40% by weight or less, more preferably 20% by weight or less, More preferably, it is 10 weight% or less. When the content of the conductive particles is not less than the above lower limit and not more than the above upper limit, the conduction reliability between the electrodes is further enhanced.
 (接続構造体)
 上記導電性粒子を用いて、又は上記導電性粒子とバインダー樹脂とを含む導電材料を用いて、接続対象部材を接続することにより、接続構造体を得ることができる。
(Connection structure)
A connection structure can be obtained by connecting the connection object members using the conductive particles or using a conductive material containing the conductive particles and a binder resin.
 上記接続構造体は、第1の接続対象部材と、第2の接続対象部材と、第1,第2の接続対象部材を接続している接続部とを備え、該接続部が上述した導電性粒子により形成されているか、又は上述した導電性粒子とバインダー樹脂とを含む導電材料により形成されている接続構造体であることが好ましい。導電性粒子が用いられた場合には、接続部自体が導電性粒子である。すなわち、第1,第2の接続対象部材が導電性粒子により接続される。 The connection structure includes a first connection target member, a second connection target member, and a connection portion connecting the first and second connection target members, and the connection portion has the above-described conductivity. The connection structure is preferably formed of particles or formed of a conductive material containing the above-described conductive particles and a binder resin. In the case where conductive particles are used, the connection portion itself is conductive particles. That is, the first and second connection target members are connected by the conductive particles.
 図4に、本発明の第1の実施形態に係る導電性粒子を用いた接続構造体を模式的に断面図で示す。 FIG. 4 is a cross-sectional view schematically showing a connection structure using conductive particles according to the first embodiment of the present invention.
 図4に示す接続構造体51は、第1の接続対象部材52と、第2の接続対象部材53と、第1,第2の接続対象部材52,53を接続している接続部54とを備える。接続部54は、導電性粒子1を含む導電材料を硬化させることにより形成されている。接続部54は、導電性粒子1とバインダー樹脂54aとを含む。なお、図4では、導電性粒子1は、図示の便宜上、略図的に示されている。導電性粒子1にかえて、導電性粒子1A,1B等を用いてもよい。 4 includes a first connection target member 52, a second connection target member 53, and a connection portion 54 that connects the first and second connection target members 52 and 53. Prepare. The connection portion 54 is formed by curing a conductive material including the conductive particles 1. The connection part 54 includes the conductive particles 1 and the binder resin 54a. In FIG. 4, the conductive particles 1 are schematically shown for convenience of illustration. Instead of the conductive particles 1, conductive particles 1A, 1B, etc. may be used.
 第1の接続対象部材52は表面(上面)に、複数の第1の電極52aを有する。第2の接続対象部材53は表面(下面)に、複数の第2の電極53aを有する。第1の電極52aと第2の電極53aとが、1つ又は複数の導電性粒子1により電気的に接続されている。従って、第1,第2の接続対象部材52,53が導電性粒子1により電気的に接続されている。 The first connection target member 52 has a plurality of first electrodes 52a on the surface (upper surface). The second connection target member 53 has a plurality of second electrodes 53a on the surface (lower surface). The first electrode 52 a and the second electrode 53 a are electrically connected by one or a plurality of conductive particles 1. Therefore, the first and second connection target members 52 and 53 are electrically connected by the conductive particles 1.
 上記接続構造体の製造方法は特に限定されない。接続構造体の製造方法の一例としては、第1の接続対象部材と第2の接続対象部材との間に上記導電材料を配置し、積層体を得た後、該積層体を加熱及び加圧する方法等が挙げられる。上記加圧の圧力は9.8×10~4.9×10Pa程度である。上記加熱の温度は、120~220℃程度である。フレキシブルプリント基板の電極、樹脂フィルム上に配置された電極及びタッチパネルの電極を接続するための上記加圧の圧力は9.8×10~1.0×10Pa程度である。 The manufacturing method of the connection structure is not particularly limited. As an example of the manufacturing method of the connection structure, the conductive material is disposed between the first connection target member and the second connection target member to obtain a laminate, and then the laminate is heated and pressurized. Methods and the like. The pressurizing pressure is about 9.8 × 10 4 to 4.9 × 10 6 Pa. The heating temperature is about 120 to 220 ° C. The pressure applied to connect the electrode of the flexible printed board, the electrode disposed on the resin film, and the electrode of the touch panel is about 9.8 × 10 4 to 1.0 × 10 6 Pa.
 上記接続対象部材としては、具体的には、半導体チップ、コンデンサ及びダイオード等の電子部品、並びにプリント基板、フレキシブルプリント基板、ガラスエポキシ基板及びガラス基板等の回路基板などの電子部品等が挙げられる。上記接続対象部材は電子部品であることが好ましい。上記導電性粒子は、電子部品における電極の電気的な接続に用いられることが好ましい。 Specific examples of the connection target member include electronic components such as semiconductor chips, capacitors, and diodes, and electronic components such as printed boards, flexible printed boards, glass epoxy boards, and glass boards. The connection target member is preferably an electronic component. The conductive particles are preferably used for electrical connection of electrodes in an electronic component.
 上記接続対象部材に設けられている電極としては、金電極、ニッケル電極、錫電極、アルミニウム電極、銅電極、銀電極、モリブデン電極及びタングステン電極等の金属電極が挙げられる。上記接続対象部材がフレキシブルプリント基板である場合には、上記電極は金電極、ニッケル電極、錫電極又は銅電極であることが好ましい。上記接続対象部材がガラス基板である場合には、上記電極はアルミニウム電極、銅電極、モリブデン電極又はタングステン電極であることが好ましい。なお、上記電極がアルミニウム電極である場合には、アルミニウムのみで形成された電極であってもよく、金属酸化物層の表面にアルミニウム層が積層された電極であってもよい。上記金属酸化物層の材料としては、3価の金属元素がドープされた酸化インジウム及び3価の金属元素がドープされた酸化亜鉛等が挙げられる。上記3価の金属元素としては、Sn、Al及びGa等が挙げられる。 Examples of the electrode provided on the connection target member include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a silver electrode, a molybdenum electrode, and a tungsten electrode. When the connection object member is a flexible printed board, the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, or a copper electrode. When the connection target member is a glass substrate, the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, or a tungsten electrode. In addition, when the said electrode is an aluminum electrode, the electrode formed only with aluminum may be sufficient and the electrode by which the aluminum layer was laminated | stacked on the surface of the metal oxide layer may be sufficient. Examples of the material for the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element. Examples of the trivalent metal element include Sn, Al, and Ga.
 以下、実施例及び比較例を挙げて、本発明を具体的に説明する。本発明は、以下の実施例のみに限定されない。 Hereinafter, the present invention will be specifically described with reference to examples and comparative examples. The present invention is not limited only to the following examples.
 (実施例1)
 (1)導電性粒子の作製
 基材粒子Aとして、粒子径が3.0μmであるジビニルベンゼン共重合体樹脂粒子(積水化学工業社製「ミクロパールSP-203」)を用意した。
Example 1
(1) Production of Conductive Particles As substrate particles A, divinylbenzene copolymer resin particles (“Micropearl SP-203” manufactured by Sekisui Chemical Co., Ltd.) having a particle size of 3.0 μm were prepared.
 パラジウム触媒液を5重量%含むアルカリ溶液100重量部に、上記樹脂粒子10重量部を、超音波分散器を用いて分散させた後、溶液をろ過することにより、樹脂粒子を取り出した。次いで、樹脂粒子をジメチルアミンボラン1重量%溶液100重量部に添加し、樹脂粒子の表面を活性化させた。表面が活性化された樹脂粒子を十分に水洗した後、蒸留水500重量部に加え、分散させることにより、懸濁液を得た。 The resin particles were taken out by dispersing 10 parts by weight of the resin particles in 100 parts by weight of an alkaline solution containing 5% by weight of a palladium catalyst solution using an ultrasonic disperser, and then filtering the solution. Next, the resin particles were added to 100 parts by weight of a 1% by weight dimethylamine borane solution to activate the surface of the resin particles. The resin particles whose surface was activated were sufficiently washed with water, and then added to 500 parts by weight of distilled water and dispersed to obtain a suspension.
 懸濁液を、硫酸ニッケル0.09mol/L、硝酸タリウム30ppm及び硝酸ビスマス20ppmの溶液中に入れ、粒子混合液(A)を得た。 The suspension was put into a solution of nickel sulfate 0.09 mol / L, thallium nitrate 30 ppm and bismuth nitrate 20 ppm to obtain a particle mixture (A).
 また別に、硫酸ニッケル0.23mol/L、ジメチルアミンボラン0.92mol/L、クエン酸ナトリウム0.25mol/L、タングステン酸ナトリウム0.05mol/L、硝酸タリウム140ppm、及び硝酸ビスマス30ppmを含むニッケルめっき液(B)(pH8.0)を用意した。 Separately, nickel plating containing nickel sulfate 0.23 mol / L, dimethylamine borane 0.92 mol / L, sodium citrate 0.25 mol / L, sodium tungstate 0.05 mol / L, thallium nitrate 140 ppm, and bismuth nitrate 30 ppm Liquid (B) (pH 8.0) was prepared.
 40℃に調整した分散状態の粒子混合液(A)に上記ニッケルめっき液(B)を徐々に滴下し、無電解ニッケルめっきを行った。ニッケルめっき液(B)の滴下速度は、10ml/分に設定した。ニッケルめっき液(B)の滴下中は、発生したNi突起核を超音波撹拌により分散しながらニッケルめっきを行った。 The nickel plating solution (B) was gradually added dropwise to the dispersed particle mixture (A) adjusted to 40 ° C. to perform electroless nickel plating. The dropping rate of the nickel plating solution (B) was set to 10 ml / min. During the dropping of the nickel plating solution (B), nickel plating was performed while dispersing the generated Ni protrusion nuclei by ultrasonic stirring.
 その後、懸濁液をろ過することにより、粒子を取り出し、水洗し、乾燥することにより、樹脂粒子の表面にニッケル-ボロン導電層(厚み0.1μm)を配置して、外表面が突起を有する導電層である導電性粒子を得た。 Thereafter, the suspension is filtered to remove the particles, washed with water, and dried to place a nickel-boron conductive layer (thickness 0.1 μm) on the surface of the resin particles, and the outer surface has protrusions. Conductive particles as a conductive layer were obtained.
 (2)異方性導電材料の作製
 得られた導電性粒子7重量部と、ビスフェノールA型フェノキシ樹脂25重量部と、フルオレン型エポキシ樹脂4重量部と、フェノールノボラック型エポキシ樹脂30重量部と、SI-60L(三新化学工業社製)とを配合して、3分間脱泡撹拌することで、異方性導電ペーストを得た。
(2) Production of anisotropic conductive material 7 parts by weight of the obtained conductive particles, 25 parts by weight of bisphenol A type phenoxy resin, 4 parts by weight of fluorene type epoxy resin, 30 parts by weight of phenol novolac type epoxy resin, SI-60L (manufactured by Sanshin Chemical Industry Co., Ltd.) was blended and defoamed and stirred for 3 minutes to obtain an anisotropic conductive paste.
 (3)接続構造体の作製
 L/Sが10μm/20μmであるIZO電極パターン(第1の電極、電極表面の金属のビッカース硬度100Hv)が上面に形成された透明ガラス基板を用意した。また、L/Sが10μm/20μmであるAu電極パターン(第2の電極、電極表面の金属のビッカース硬度50Hv)が下面に形成された半導体チップを用意した。
(3) Production of Connection Structure A transparent glass substrate having an IZO electrode pattern (first electrode, metal Vickers hardness of 100 Hv on the electrode surface) having an L / S of 10 μm / 20 μm was prepared. Further, a semiconductor chip was prepared in which an Au electrode pattern (second electrode, metal Vickers hardness of 50 Hv on the electrode surface) having L / S of 10 μm / 20 μm was formed on the lower surface.
 (実施例2)
 ニッケルめっき液(B)中の硫酸ニッケル濃度0.23mol/Lを0.46mol/Lに変更したこと以外は実施例1と同様にして、導電性粒子を作製した。このようにして、樹脂粒子の表面にニッケル-ボロン導電層(厚み0.2μm)を配置して、外表面が突起を有する導電層である導電性粒子を得た。
(Example 2)
Conductive particles were produced in the same manner as in Example 1 except that the nickel sulfate concentration in the nickel plating solution (B) was changed from 0.23 mol / L to 0.46 mol / L. In this way, a nickel-boron conductive layer (thickness 0.2 μm) was arranged on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained.
 得られた導電性粒子を用いて、実施例1と同様にして、異方性導電材料及び接続構造体を作製した。 An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
 (実施例3)
 ニッケルめっき液(B)のpHを8.0から6.0に変更したこと以外は実施例1と同様にして、導電性粒子を作製した。このようにして、樹脂粒子の表面にニッケル-ボロン導電層(厚み0.1μm)を配置して、外表面が突起を有する導電層である導電性粒子を得た。得られた導電性粒子を用いて、実施例1と同様にして、異方性導電材料及び接続構造体を作製した。
Example 3
Conductive particles were produced in the same manner as in Example 1 except that the pH of the nickel plating solution (B) was changed from 8.0 to 6.0. In this way, a nickel-boron conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
 (実施例4)
 上記ニッケルめっき液(B)の滴下速度を1/2の速度に変更したこと以外は実施例1と同様にして、導電性粒子を作製した。このようにして、樹脂粒子の表面にニッケル-ボロン導電層(厚み0.1μm)を配置して、外表面が突起を有する導電層である導電性粒子を得た。得られた導電性粒子を用いて、実施例1と同様にして、異方性導電材料及び接続構造体を作製した。
Example 4
Conductive particles were produced in the same manner as in Example 1 except that the dropping rate of the nickel plating solution (B) was changed to 1/2. In this way, a nickel-boron conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
 (実施例5)
 上記ニッケルめっき液(B)における硝酸タリウム140ppmを二酸化五バナジウム200ppmに変更したこと以外は実施例1と同様にして、導電性粒子を作製した。このようにして、樹脂粒子の表面にニッケル-ボロン導電層(厚み0.1μm)を配置して、外表面が突起を有する導電層である導電性粒子を得た。得られた導電性粒子を用いて、実施例1と同様にして、異方性導電材料及び接続構造体を作製した。
(Example 5)
Conductive particles were produced in the same manner as in Example 1 except that 140 ppm of thallium nitrate in the nickel plating solution (B) was changed to 200 ppm of vanadium dioxide. In this way, a nickel-boron conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
 (実施例6)
 パラジウム触媒液を5重量%含むアルカリ溶液100重量部に、上記樹脂粒子10重量部を、超音波分散器を用いて分散させた後、溶液をろ過することにより、樹脂粒子を取り出した。次いで、樹脂粒子をジメチルアミンボラン1重量%溶液100重量部に添加し、樹脂粒子の表面を活性化させた。表面が活性化された樹脂粒子を十分に水洗した後、蒸留水500重量部に加え、分散させることにより、懸濁液を得た。
(Example 6)
After dispersing 10 parts by weight of the resin particles in 100 parts by weight of an alkaline solution containing 5% by weight of a palladium catalyst solution using an ultrasonic disperser, the resin particles were taken out by filtering the solution. Next, the resin particles were added to 100 parts by weight of a 1% by weight dimethylamine borane solution to activate the surface of the resin particles. The resin particles whose surface was activated were sufficiently washed with water, and then added to 500 parts by weight of distilled water and dispersed to obtain a suspension.
 懸濁液を、硫酸ニッケル0.09mol/L、硝酸タリウム30ppm及び硝酸ビスマス20ppmの溶液中に入れ、粒子混合液(A)を得た。 The suspension was put into a solution of nickel sulfate 0.09 mol / L, thallium nitrate 30 ppm and bismuth nitrate 20 ppm to obtain a particle mixture (A).
 また、硫酸ニッケル0.23mol/L、ジメチルアミンボラン0.92mol/L、クエン酸ナトリウム0.25mol/L、タングステン酸ナトリウム0.05mol/L、硝酸タリウム140ppm、及び硝酸ビスマス30ppmを含むニッケルめっき液(B)(pH8.0)を用意した。 Nickel plating solution containing nickel sulfate 0.23 mol / L, dimethylamine borane 0.92 mol / L, sodium citrate 0.25 mol / L, sodium tungstate 0.05 mol / L, thallium nitrate 140 ppm, and bismuth nitrate 30 ppm (B) (pH 8.0) was prepared.
 また、ジメチルアミンボラン2.0mol/L、水酸化ナトリウム0.05mol/L、を含む突起形成用めっき液(C)(pH10.0)を用意した。 Also, a plating solution for forming a protrusion (C) (pH 10.0) containing dimethylamine borane 2.0 mol / L and sodium hydroxide 0.05 mol / L was prepared.
 40℃に調整した分散状態の粒子混合液(A)に上記ニッケルめっき液(B)を徐々に滴下し、無電解ニッケルめっきを行った。ニッケルめっき液(B)の滴下速度は、10ml/分に設定した。ニッケルめっき液(B)の滴下中は、発生したNi突起核を超音波撹拌により分散しながらニッケルめっきを行った。その後、導電層に突起を形成するために、突起形成用めっき液(C)を徐々に滴下し、突起を形成した。突起形成用めっき液(C)の滴下速度は、2ml/分に設定した。突起形成用めっき液(C)の滴下中は、発生したNi突起核を超音波撹拌により分散しながらニッケルめっきを行った。 The nickel plating solution (B) was gradually added dropwise to the dispersed particle mixture (A) adjusted to 40 ° C. to perform electroless nickel plating. The dropping rate of the nickel plating solution (B) was set to 10 ml / min. During the dropping of the nickel plating solution (B), nickel plating was performed while dispersing the generated Ni protrusion nuclei by ultrasonic stirring. Thereafter, in order to form protrusions on the conductive layer, the protrusion forming plating solution (C) was gradually dropped to form protrusions. The dropping rate of the projection forming plating solution (C) was set to 2 ml / min. During the dropping of the projection forming plating solution (C), nickel plating was performed while dispersing the generated Ni projection nuclei by ultrasonic stirring.
 その後、懸濁液をろ過することにより、粒子を取り出し、水洗し、乾燥することにより、樹脂粒子の表面にニッケル-ボロン導電層(厚み0.1μm)を配置して、外表面が突起を有する導電層である導電性粒子を得た。得られた導電性粒子を用いて、実施例1と同様にして、異方性導電材料及び接続構造体を作製した。 Thereafter, the suspension is filtered to remove the particles, washed with water, and dried to place a nickel-boron conductive layer (thickness 0.1 μm) on the surface of the resin particles, and the outer surface has protrusions. Conductive particles as a conductive layer were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
 (実施例7)
 基材粒子Aと粒子径のみが異なり、粒子径が2.5μmである基材粒子Bに変更したこと以外は実施例6と同様にして、導電性粒子を得た。このようにして、樹脂粒子の表面にニッケル-ボロン導電層(厚み0.1μm)を配置して、外表面が突起を有する導電層である導電性粒子を得た。得られた導電性粒子を用いて、実施例1と同様にして、異方性導電材料及び接続構造体を作製した。
(Example 7)
Conductive particles were obtained in the same manner as in Example 6, except that only the particle diameter was different from that of the substrate particle A and the particle diameter was changed to the substrate particle B of 2.5 μm. In this way, a nickel-boron conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
 (実施例8)
 基材粒子Aと粒子径のみが異なり、粒子径が10.0μmである基材粒子Cに変更したこと以外は実施例6と同様にして、導電性粒子を得た。このようにして、樹脂粒子の表面にニッケル-ボロン導電層(厚み0.1μm)を配置して、外表面が突起を有する導電層である導電性粒子を得た。得られた導電性粒子を用いて、実施例1と同様にして、異方性導電材料及び接続構造体を作製した。
(Example 8)
Conductive particles were obtained in the same manner as in Example 6 except that only the particle diameter was different from that of the substrate particle A and the particle diameter was changed to the substrate particle C of 10.0 μm. In this way, a nickel-boron conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
 (実施例9)
 粒子径が2.0μmであるジビニルベンゼン共重合体樹脂粒子(積水化学工業社製「ミクロパールSP-202」)の表面を、ゾルゲル反応による縮合反応を用いてシリカシェル(厚み250nm)により被覆したコアシェル型の有機無機ハイブリッド粒子(基材粒子D)を得た。上記基材粒子Aを上記基材粒子Dに変更したこと以外は実施例6と同様にして、導電性粒子を得た。このようにして、樹脂粒子の表面にニッケル-ボロン導電層(厚み0.1μm)を配置して、外表面が突起を有する導電層である導電性粒子を得た。得られた導電性粒子を用いて、実施例1と同様にして、異方性導電材料及び接続構造体を作製した。
Example 9
The surface of divinylbenzene copolymer resin particles having a particle diameter of 2.0 μm (“Micropearl SP-202” manufactured by Sekisui Chemical Co., Ltd.) was coated with a silica shell (thickness 250 nm) using a condensation reaction by a sol-gel reaction. Core-shell type organic-inorganic hybrid particles (base material particles D) were obtained. Except having changed the said base material particle A into the said base material particle D, it carried out similarly to Example 6, and obtained electroconductive particle. In this way, a nickel-boron conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
 (実施例10)
 撹拌機及び温度計が取り付けられた500mLの反応容器内に、0.13重量%のアンモニア水溶液300gを入れた。次に、反応容器内のアンモニア水溶液中に、メチルトリメトキシシラン4.1gと、ビニルトリメトキシシラン19.2gと、シリコーンアルコキシオリゴマー(信越化学工業社製「X-41-1053」)0.7gとの混合物をゆっくりと添加した。撹拌しながら、加水分解及び縮合反応を進行させた後、25重量%アンモニア水溶液2.4mLを添加した後、アンモニア水溶液中から粒子を単離して、得られた粒子を酸素分圧10-17atm、350℃で2時間焼成して、粒子径が2.5μmの有機無機ハイブリッド粒子(基材粒子E)を得た。上記基材粒子Aを上記基材粒子Eに変更したこと以外は実施例6と同様にして、導電性粒子を得た。このようにして、樹脂粒子の表面にニッケル-ボロン導電層(厚み0.1μm)を配置して、外表面が突起を有する導電層である導電性粒子を得た。得られた導電性粒子を用いて、実施例1と同様にして、異方性導電材料及び接続構造体を作製した。
(Example 10)
In a 500 mL reaction vessel equipped with a stirrer and a thermometer, 300 g of a 0.13% by weight aqueous ammonia solution was placed. Next, 4.1 g of methyltrimethoxysilane, 19.2 g of vinyltrimethoxysilane, and 0.7 g of silicone alkoxy oligomer (“X-41-1053” manufactured by Shin-Etsu Chemical Co., Ltd.) in an aqueous ammonia solution in the reaction vessel. The mixture with was added slowly. After the hydrolysis and condensation reaction proceeded with stirring, 2.4 mL of a 25 wt% aqueous ammonia solution was added, and then the particles were isolated from the aqueous ammonia solution, and the resulting particles were subjected to an oxygen partial pressure of 10 −17 atm. And calcination at 350 ° C. for 2 hours to obtain organic-inorganic hybrid particles (base particle E) having a particle size of 2.5 μm. Conductive particles were obtained in the same manner as in Example 6 except that the base particle A was changed to the base particle E. In this way, a nickel-boron conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
 (実施例11)
 4ツ口セパラブルカバー、撹拌翼、三方コック、冷却管及び温度プローブが取り付けられた1000mLのセパラブルフラスコに、メタクリル酸メチル100mmolと、N,N,N-トリメチル-N-2-メタクリロイルオキシエチルアンモニウムクロライド1mmolと、2,2’-アゾビス(2-アミジノプロパン)二塩酸塩1mmolとを含むモノマー組成物を固形分率が5重量%となるようにイオン交換水に秤取した後、200rpmで撹拌し、窒素雰囲気下70℃で24時間重合を行った。反応終了後、凍結乾燥して、表面にアンモニウム基を有し、平均粒子径220nm及びCV値10%の絶縁性粒子を得た。
(Example 11)
To a 1000 mL separable flask equipped with a four-neck separable cover, stirring blade, three-way cock, condenser and temperature probe, 100 mmol of methyl methacrylate and N, N, N-trimethyl-N-2-methacryloyloxyethyl A monomer composition containing 1 mmol of ammonium chloride and 1 mmol of 2,2′-azobis (2-amidinopropane) dihydrochloride was weighed in ion-exchanged water so that the solid content was 5% by weight, and then at 200 rpm. The mixture was stirred and polymerized at 70 ° C. for 24 hours under a nitrogen atmosphere. After completion of the reaction, it was freeze-dried to obtain insulating particles having an ammonium group on the surface, an average particle size of 220 nm, and a CV value of 10%.
 絶縁性粒子を超音波照射下でイオン交換水に分散させ、絶縁性粒子の10重量%水分散液を得た。 The insulating particles were dispersed in ion exchange water under ultrasonic irradiation to obtain a 10 wt% aqueous dispersion of insulating particles.
 実施例6で得られた導電性粒子10gをイオン交換水500mLに分散させ、絶縁性粒子の水分散液4gを添加し、室温で6時間撹拌した。3μmのメッシュフィルターでろ過した後、更にメタノールで洗浄し、乾燥し、絶縁性粒子が付着した導電性粒子を得た。 10 g of the conductive particles obtained in Example 6 were dispersed in 500 mL of ion-exchanged water, 4 g of an aqueous dispersion of insulating particles was added, and the mixture was stirred at room temperature for 6 hours. After filtration through a 3 μm mesh filter, the particles were further washed with methanol and dried to obtain conductive particles having insulating particles attached thereto.
 走査型電子顕微鏡(SEM)により観察したところ、導電性粒子の表面に絶縁性粒子による被覆層が1層のみ形成されていた。画像解析により導電性粒子の中心より2.7μm面積に対する絶縁性粒子の被覆面積(即ち絶縁性粒子の粒子径の投影面積)を算出したところ、被覆率は30%であった。 When observed with a scanning electron microscope (SEM), only one coating layer of insulating particles was formed on the surface of the conductive particles. The coverage of the insulating particles with respect to the area of 2.7 μm from the center of the conductive particles by image analysis (that is, the projected area of the particle diameter of the insulating particles) was calculated to be 30%.
 得られた導電性粒子を用いて、実施例1と同様にして、異方性導電材料及び接続構造体を作製した。 An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
 (実施例12)
 ニッケルめっき液(B)におけるクエン酸ナトリウム0.25mol/Lをマロン酸ニナトリウム0.5mol/Lに変更したこと以外は実施例6と同様にして、導電性粒子を作製した。このようにして、樹脂粒子の表面にニッケル-ボロン導電層(厚み0.1μm)を配置して、外表面が突起を有する導電層である導電性粒子を得た。得られた導電性粒子を用いて、実施例1と同様にして、異方性導電材料及び接続構造体を作製した。
Example 12
Conductive particles were prepared in the same manner as in Example 6 except that sodium citrate 0.25 mol / L in the nickel plating solution (B) was changed to disodium malonate 0.5 mol / L. In this way, a nickel-boron conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
 (実施例13)
 ニッケルめっき液(B)におけるクエン酸ナトリウム0.25mol/Lをプロピオン酸ナトリウム1.0mol/Lに変更したこと以外は実施例6と同様にして、導電性粒子を作製した。このようにして、樹脂粒子の表面にニッケル-ボロン導電層(厚み0.1μm)を配置して、外表面が突起を有する導電層である導電性粒子を得た。得られた導電性粒子を用いて、実施例1と同様にして、異方性導電材料及び接続構造体を作製した。
(Example 13)
Conductive particles were produced in the same manner as in Example 6 except that sodium citrate 0.25 mol / L in the nickel plating solution (B) was changed to sodium propionate 1.0 mol / L. In this way, a nickel-boron conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
 (比較例1)
 ニッケルめっき液(B)におけるジメチルアミンボラン0.92mol/Lを、次亜リン酸ナトリウム1.38mol/Lに変更したこと、並びに突起形成用めっき液(C)ジメチルアミンボラン2.0mol/Lを、次亜リン酸ナトリウム2.18mol/Lに変更したこと、並びにニッケルめっき液(B)におけるクエン酸ナトリウム0.25mol/Lを酒石酸ナトリウム0.3mol/Lに変更したこと以外は実施例6と同様にして、導電性粒子を作製した。このようにして、樹脂粒子の表面にニッケル-リン導電層(厚み0.1μm)を配置して、外表面が突起を有する導電層である導電性粒子を得た。得られた導電性粒子を用いて、実施例1と同様にして、異方性導電材料及び接続構造体を作製した。
(Comparative Example 1)
Dimethylamine borane 0.92 mol / L in the nickel plating solution (B) was changed to 1.38 mol / L sodium hypophosphite, and the plating solution for projection formation (C) dimethylamine borane 2.0 mol / L Example 6 except that sodium hypophosphite was changed to 2.18 mol / L, and sodium citrate 0.25 mol / L in the nickel plating solution (B) was changed to sodium tartrate 0.3 mol / L. Similarly, conductive particles were produced. In this way, a nickel-phosphorus conductive layer (thickness 0.1 μm) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
 (比較例2)
 突起形成用めっき液(C)を、超音波撹拌を行わずに滴下したこと以外は実施例6と同様にして、導電性粒子を作製した。このようにして、樹脂粒子の表面にニッケル-ボロン導電層(厚み0.1μm)を配置して、外表面が突起を有する導電層である導電性粒子を得た。得られた導電性粒子を用いて、実施例1と同様にして、異方性導電材料及び接続構造体を作製した。
(Comparative Example 2)
Conductive particles were produced in the same manner as in Example 6 except that the protrusion forming plating solution (C) was dropped without performing ultrasonic stirring. In this way, a nickel-boron conductive layer (thickness: 0.1 μm) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
 (比較例3)
 金属ニッケル粒子スラリー(三井金属社製「2020SUS」、平均粒子径150nm)を用いて、実施例1で用いた樹脂粒子の表面に金属ニッケル粒子を付着させた後に、導電層を形成して、導電部の外表面に突起を形成したこと、並びにニッケルめっき液(B)におけるジメチルアミンボラン0.92mol/Lを、次亜リン酸ナトリウム1.38mol/Lに変更したこと、並びに突起形成用めっき液(C)ジメチルアミンボラン2.0mol/Lを、次亜リン酸ナトリウム2.18mol/Lに変更したこと以外は、導電層は実施例6と同様にして形成して、外表面が突起を有する導電層である導電性導電性粒子を作製した。このようにして、樹脂粒子の表面にニッケル-リン導電層(厚み0.1μm)を配置して、外表面が突起を有する導電層である導電性粒子を得た。得られた導電性粒子を用いて、実施例1と同様にして、異方性導電材料及び接続構造体を作製した。
(Comparative Example 3)
Using metal nickel particle slurry (“2020SUS” manufactured by Mitsui Kinzoku Co., Ltd., average particle diameter of 150 nm), the metal nickel particles are attached to the surface of the resin particles used in Example 1, and then a conductive layer is formed to conduct electricity. Forming protrusions on the outer surface of the part, changing dimethylamine borane 0.92 mol / L in the nickel plating solution (B) to 1.38 mol / L sodium hypophosphite, and a plating solution for forming the protrusions (C) Except for changing 2.0 mol / L of dimethylamine borane to 2.18 mol / L of sodium hypophosphite, the conductive layer is formed in the same manner as in Example 6, and the outer surface has protrusions. Conductive conductive particles as a conductive layer were produced. In this way, a nickel-phosphorus conductive layer (thickness 0.1 μm) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
 (比較例4)
 ニッケルめっき液(B)におけるジメチルアミンボラン0.92mol/Lを、次亜リン酸ナトリウム1.38mol/Lに変更したこと、並びに突起形成用めっき液(C)ジメチルアミンボラン2.0mol/Lを、次亜リン酸ナトリウム2.18mol/Lに変更したこと、並びにニッケルめっき液(B)におけるクエン酸ナトリウム0.25mol/Lをプロピオン酸ナトリウム1.0mol/Lに変更したこと以外は実施例6と同様にして、導電性粒子を作製した。このようにして、樹脂粒子の表面にニッケル-リン導電層(厚み0.1μm)を配置して、外表面が突起を有する導電層である導電性粒子を得た。得られた導電性粒子を用いて、実施例1と同様にして、異方性導電材料及び接続構造体を作製した。
(Comparative Example 4)
Dimethylamine borane 0.92 mol / L in the nickel plating solution (B) was changed to 1.38 mol / L sodium hypophosphite, and the plating solution for projection formation (C) dimethylamine borane 2.0 mol / L Example 6 except that sodium hypophosphite was changed to 2.18 mol / L and that sodium citrate 0.25 mol / L in the nickel plating solution (B) was changed to sodium propionate 1.0 mol / L In the same manner, conductive particles were produced. In this way, a nickel-phosphorus conductive layer (thickness 0.1 μm) was disposed on the surface of the resin particles, and conductive particles whose outer surface was a conductive layer having protrusions were obtained. An anisotropic conductive material and a connection structure were produced in the same manner as in Example 1 using the obtained conductive particles.
 なお、上記の実施例、比較例では全て、突起の高さは導電性粒子の粒子径の1/15以上、1/6以下であった。 In all of the above Examples and Comparative Examples, the height of the protrusion was 1/15 or more and 1/6 or less of the particle diameter of the conductive particles.
 (評価)
 (1)結晶子サイズ
 X線回折装置(理学電機社製「RINT2500VHF」)を用いて、管電圧40kV、管電流50mA、X線:CuKα線、及び波長λ:1.541Åの条件で、導電部における結晶子サイズを測定した。
(Evaluation)
(1) Crystallite size Using an X-ray diffractometer (“RINT2500VHF” manufactured by Rigaku Corporation), the conductive part under the conditions of tube voltage 40 kV, tube current 50 mA, X-ray: CuKα ray, and wavelength λ: 1.541Å The crystallite size was measured.
 (2)結晶格子歪み
 X線回折装置(理学電機社製「RINT2500VHF」)を用いて、管電圧40kV、管電流50mA、X線:CuKα線、及び波長λ:1.541Åの条件で、導電部における結晶格子歪みを測定した。
(2) Crystal lattice distortion Using an X-ray diffractometer (“RINT2500VHF” manufactured by Rigaku Corporation), a conductive part under the conditions of tube voltage 40 kV, tube current 50 mA, X-ray: CuKα ray, and wavelength λ: 1.541Å. The crystal lattice distortion in was measured.
 (3)突起の状態
 走査型電子顕微鏡(SEM)を用いて、画像倍率を25000倍に設定し、10個の導電性粒子を無作為に選択し、それぞれの導電性粒子の突起部を観察した。全ての突起部は、金属又は金属の合金の粒子間に粒界が観察されるか否かを評価して、金属又は金属の合金の粒子が列状に複数個連結して形成されておらず、かつ金属又は金属の合金により形成されている突起部(第1の突起部)と、金属又は金属の合金の粒子が列状に複数個連結した粒子連結体により形成されている突起部(第2の突起部)とに分別した。このようにして、1つの導電性粒子あたりの1)第1の突起部の個数と、2)第2の突起部の個数とを計測した。第1,第2の突起部の全個数100%中の第1,第2の突起部の割合を算出した。
(3) State of protrusions Using a scanning electron microscope (SEM), the image magnification was set to 25000 times, 10 conductive particles were randomly selected, and the protrusions of each conductive particle were observed. . All the protrusions are evaluated by whether or not grain boundaries are observed between particles of metal or metal alloy, and are not formed by connecting a plurality of particles of metal or metal alloy in a row. And a protrusion (first protrusion) formed of a metal or metal alloy and a protrusion (first protrusion) formed of a particle linking body in which a plurality of particles of metal or metal alloy are connected in a row. 2 protrusions). Thus, 1) the number of first protrusions and 2) the number of second protrusions per one conductive particle were measured. The ratio of the first and second protrusions in the total number of 100% of the first and second protrusions was calculated.
 (4)結晶構造の確認(連続性)
 電界放射型透過電子顕微鏡(FE-TEM)(日本電子社製「JEM-ARM200F」)を用いて、外表面に複数の突起を有する導電部における結晶粒界の有無を500万倍で評価した。また、導電部における突起がある部分と突起がない部分とで、結晶構造が連続しているか否かを評価した。
(4) Confirmation of crystal structure (continuity)
Using a field emission transmission electron microscope (FE-TEM) (“JEM-ARM200F” manufactured by JEOL Ltd.), the presence or absence of crystal grain boundaries in the conductive portion having a plurality of protrusions on the outer surface was evaluated at 5 million times. In addition, it was evaluated whether or not the crystal structure was continuous between the portion with the protrusion and the portion without the protrusion in the conductive portion.
 (5)導電性粒子の圧縮弾性率(10%K値)
 導電性粒子の10%K値を、23℃の条件で、上述した方法により、微小圧縮試験機(フィッシャー社製「フィッシャースコープH-100」)を用いて測定した。
(5) Compressive elastic modulus of conductive particles (10% K value)
The 10% K value of the conductive particles was measured using a micro-compression tester (“Fischer Scope H-100” manufactured by Fischer) according to the method described above under the condition of 23 ° C.
 (6)電極間の接続抵抗
 得られた接続構造体の上下の電極間の接続抵抗をそれぞれ、4端子法により測定した。2つの接続抵抗の平均値を算出した。なお、電圧=電流×抵抗の関係から、一定の電流を流した時の電圧を測定することにより接続抵抗を求めることができる。電極間の接続抵抗を下記の基準で判定した。
(6) Connection resistance between electrodes The connection resistance between the upper and lower electrodes of the obtained connection structure was measured by a four-terminal method, respectively. The average value of the two connection resistances was calculated. Note that the connection resistance can be obtained by measuring the voltage when a constant current is passed from the relationship of voltage = current × resistance. The connection resistance between the electrodes was determined according to the following criteria.
 [電極間の接続抵抗の判定基準]
 ○○○:接続抵抗が2.0Ω以下
 ○○:接続抵抗が2.0Ωを超え、3.0Ω以下
 ○:接続抵抗が3.0Ωを超え、5.0Ω以下
 △:接続抵抗が5.0Ωを超え、10Ω以下
 ×:接続抵抗が10Ωを超える
[Criteria for connection resistance between electrodes]
○○○: Connection resistance is 2.0Ω or less ○○: Connection resistance is over 2.0Ω, 3.0Ω or less ○: Connection resistance is over 3.0Ω, 5.0Ω or less Δ: Connection resistance is 5.0Ω Exceeding 10Ω ×: Connection resistance exceeds 10Ω
 (7)突起の高さ
 走査型電子顕微鏡(SEM)を用いて、画像倍率を25000倍に設定し、10個の導電性粒子を無作為に選択し、それぞれの導電性粒子の突起部を観察した。得られた導電性粒子における突起部の高さを計測した。
(7) Projection Height Using a scanning electron microscope (SEM), set the image magnification to 25000 times, select 10 conductive particles randomly, and observe the projections of each conductive particle did. The height of the protrusion in the obtained conductive particles was measured.
 結果を下記の表1に示す。 The results are shown in Table 1 below.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
 1,1A,1B…導電性粒子
 1a,1Aa,1Ba…突起
 2,2A…基材粒子
 2Ax…有機コア
 2Ay…無機シェル
 3,3A,3B…導電部
 3a,3Aa…突起
 3Bx…第1の導電部
 3By…第2の導電部
 3Bya…突起
 4…芯物質
 5…絶縁性物質
 51…接続構造体
 52…第1の接続対象部材
 52a…第1の電極
 53…第2の接続対象部材
 53a…第2の電極
 54…接続部
 54a…バインダー樹脂
DESCRIPTION OF SYMBOLS 1,1A, 1B ... Conductive particle 1a, 1Aa, 1Ba ... Protrusion 2, 2A ... Base particle 2Ax ... Organic core 2Ay ... Inorganic shell 3, 3A, 3B ... Conductive part 3a, 3Aa ... Protrusion 3Bx ... First conductivity Part 3By ... second conductive part 3Bya ... protrusion 4 ... core substance 5 ... insulating substance 51 ... connection structure 52 ... first connection object member 52a ... first electrode 53 ... second connection object member 53a ... first 2 electrode 54 ... connection part 54a ... binder resin

Claims (11)

  1.  基材粒子と、
     前記基材粒子の表面上に配置された導電部とを備え、
     前記導電部が外表面に複数の突起を有し、
     前記導電部が結晶構造を有し、
     前記導電部における前記突起がある部分と前記突起がない部分とで、結晶構造が連続している、導電性粒子。
    Substrate particles,
    A conductive portion disposed on the surface of the base particle,
    The conductive part has a plurality of protrusions on the outer surface;
    The conductive portion has a crystal structure;
    Conductive particles in which a crystal structure is continuous between a portion where the protrusion is present and a portion where the protrusion is not present in the conductive portion.
  2.  前記導電部が、金属又は金属の合金により形成されており、
     前記突起が、前記金属又は金属の合金の粒子が列状に複数個連結して形成されておらず、かつ前記金属又は金属の合金により形成されている複数の第1の突起部を有し、
     前記突起が、前記金属又は金属の合金の粒子が列状に複数個連結した粒子連結体により形成された第2の突起部を有さないか、又は前記金属又は金属の合金の粒子が列状に複数個連結した粒子連結体により形成された第2の突起部を少なくとも1つ有し、
     前記第1の突起部と前記第2の突起部との全個数100%中の70%以上が、前記第1の突起部である、請求項1に記載の導電性粒子。
    The conductive part is formed of a metal or a metal alloy;
    The protrusion is not formed by connecting a plurality of particles of the metal or metal alloy in a row, and has a plurality of first protrusions formed of the metal or metal alloy;
    The protrusion does not have a second protrusion formed by a particle linking body in which a plurality of particles of the metal or metal alloy are connected in a row, or the particles of the metal or metal alloy are in a row And having at least one second protrusion formed by a particle linking body connected to a plurality of particles,
    2. The conductive particle according to claim 1, wherein 70% or more of a total number of 100% of the first protrusions and the second protrusions is the first protrusions.
  3.  前記第1の突起部と前記第2の突起部との全個数100%中の90%以上が、前記第1の突起部である、請求項2に記載の導電性粒子。 The conductive particles according to claim 2, wherein 90% or more of 100% of the total number of the first protrusions and the second protrusions is the first protrusions.
  4.  前記導電部における結晶子サイズが0.1nm以上、100nm以下である、請求項1~3のいずれか1項に記載の導電性粒子。 The conductive particle according to any one of claims 1 to 3, wherein a crystallite size in the conductive part is 0.1 nm or more and 100 nm or less.
  5.  前記導電部における結晶格子歪みが0.001%以上、10%以下である、請求項1~4のいずれか1項に記載の導電性粒子。 The conductive particle according to any one of claims 1 to 4, wherein a crystal lattice strain in the conductive part is 0.001% or more and 10% or less.
  6.  前記導電部がニッケルを含む、請求項1~5のいずれか1項に記載の導電性粒子。 The conductive particle according to any one of claims 1 to 5, wherein the conductive portion contains nickel.
  7.  前記導電部の内部及び内側に、前記導電部の外表面を隆起させるための芯物質を有さない、請求項1~6のいずれか1項に記載の導電性粒子。 The conductive particles according to any one of claims 1 to 6, which do not have a core substance for raising the outer surface of the conductive part inside and inside the conductive part.
  8.  前記突起の高さが、前記導電性粒子の粒子径の1/100以上である、請求項1~7のいずれか1項に記載の導電性粒子。 The conductive particle according to any one of claims 1 to 7, wherein a height of the protrusion is 1/100 or more of a particle diameter of the conductive particle.
  9.  前記導電部の外表面上に配置された絶縁性物質を備える、請求項1~8のいずれか1項に記載の導電性粒子。 The conductive particles according to any one of claims 1 to 8, comprising an insulating substance disposed on an outer surface of the conductive part.
  10.  請求項1~9のいずれか1項に記載の導電性粒子と、バインダー樹脂とを含む、導電材料。 A conductive material comprising the conductive particles according to any one of claims 1 to 9 and a binder resin.
  11.  第1の電極を表面に有する第1の接続対象部材と、
     第2の電極を表面に有する第2の接続対象部材と、
     前記第1の接続対象部材と前記第2の接続対象部材とを接続している接続部とを備え、
     前記接続部が、請求項1~9のいずれか1項に記載の導電性粒子により形成されているか、又は前記導電性粒子とバインダー樹脂とを含む導電材料により形成されており、
     前記第1の電極と前記第2の電極とが前記導電性粒子により電気的に接続されている、接続構造体。
    A first connection object member having a first electrode on its surface;
    A second connection target member having a second electrode on its surface;
    A connection portion connecting the first connection target member and the second connection target member;
    The connecting portion is formed of the conductive particles according to any one of claims 1 to 9, or is formed of a conductive material containing the conductive particles and a binder resin.
    A connection structure in which the first electrode and the second electrode are electrically connected by the conductive particles.
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