WO2015037171A1

WO2015037171A1 - Sensor device, input device, and electronic device

Info

Publication number: WO2015037171A1
Application number: PCT/JP2014/003433
Authority: WO
Inventors: 章吾新開; 圭塚本; はやと長谷川; 川口　裕人; 文彦飯田; 智子勝原; 知明鈴木; 隆之田中; 泰三西村; 水野　裕; 阿部　康之
Original assignee: ソニー株式会社
Priority date: 2013-09-11
Filing date: 2014-06-27
Publication date: 2015-03-19
Also published as: CN105531651B; TW201510814A; CN105531651A; TWI625653B; JPWO2015037171A1; JP6561835B2; KR20160053919A

Abstract

Provided are a sensor device, an input device, and an electronic device in which degradation of detection precision from effects of electromagnetic noise from external sources can be alleviated. A sensor device according to an embodiment of the present technology comprises an electrode substrate and shield layers. The electrode substrate further comprises a plurality of first electrode wires and a plurality of second electrode wires. A plurality of capacitance sensors which are respectively formed in a plurality of facing regions of the plurality of first electrode wires and the plurality of second electrode wires are arrayed in a matrix. The shield layers are disposed upon the electrode substrate, and further comprise conductive films which isolate at least portions of wiring regions of the plurality of second electrode wires which communicate among the plurality of facing regions.

Description

Sensor device, input device and electronic apparatus

The present technology relates to a sensor device, an input device, and an electronic device that can detect an input operation electrostatically.

As a sensor device for an electronic device, for example, a configuration including a capacitive element and capable of detecting an operation position and a pressing force of an operator with respect to an input operation surface is known (for example, see Patent Document 1).

JP 2011-170659 A

In recent years, input methods with a high degree of freedom have been performed by gesture operations using finger movements. However, if the pressing force on the operation surface can be stably detected with high accuracy, more various input operations can be performed. Can be expected to be realized. For example, in a sensor device configured to electrostatically detect an input operation, it is necessary to suppress a decrease in detection accuracy due to the influence of external electromagnetic noise.

In view of the circumstances as described above, an object of the present technology is to provide a sensor device, an input device, and an electronic device that can suppress a decrease in detection accuracy due to the influence of external electromagnetic noise.

In order to achieve the above object, a sensor device according to an embodiment of the present technology includes an electrode substrate and a shield layer.
The electrode substrate has a plurality of first electrode lines and a plurality of second electrode lines, and a plurality of opposing regions between the plurality of first electrode lines and the plurality of second electrode lines. A plurality of capacitance sensors each formed are arranged in a matrix.
The shield layer includes a conductor film which is provided on the electrode substrate and shields at least a part of the wiring region of the plurality of second electrode lines communicating between the plurality of opposing regions.

In the sensor device, the shield layer functions as an electromagnetic shield that covers the wiring region. Thereby, the fall of the detection accuracy of each capacity | capacitance sensor by the influence of the electromagnetic noise from the outside can be suppressed.

The plurality of first electrode lines and the plurality of second electrode lines may be spaced apart from each other in the thickness direction of the electrode substrate. In this case, the plurality of capacitance sensors are respectively formed in intersecting regions of the plurality of first electrode lines and the plurality of second electrode lines.

The electrode substrate may include a first insulating layer that supports the plurality of first electrode lines, and a second insulating layer that supports the plurality of second electrode lines. In this case, the shield layer is provided on the first insulating layer, for example.

The shield layer may be provided on the same plane as the plurality of first electrode lines. The conductor film may be made of the same material as the plurality of first electrode wires. The conductor film may include a plurality of third electrode lines disposed between the plurality of first electrode lines. The conductor film may further include a wiring portion that connects the plurality of third electrode lines to each other.

On the other hand, the plurality of capacitance sensors may be respectively formed in regions facing the plurality of first electrode lines and the plurality of second electrode lines facing each other in an in-plane direction of the electrode substrate. In this case, the shield layer may further include an insulating film disposed between the conductor film and the wiring region.

The electrode substrate may include a plurality of jumper wiring portions provided at intersections of the plurality of first electrode lines and the plurality of second electrode lines. The conductor film may be provided on the same plane as the plurality of jumper wiring portions. The shield layer may cover the plurality of jumper wiring portions. The conductor film may be made of the same material as the plurality of jumper wiring portions. The shield layer may further shield at least a part of the wiring region of the plurality of first electrode lines connecting the plurality of opposed regions.

The plurality of second electrode lines may include an outer peripheral wiring portion formed outside a detection region where the plurality of capacitance sensors arranged in a matrix are formed. In this case, the shield layer may further shield at least a part of the outer peripheral wiring portion.

The sensor device includes a deformable first conductor layer disposed to face one main surface of the electrode substrate, and a plurality of first conductors connecting between the first conductor layer and the electrode substrate. And a first support having the structure. The sensor device includes a second conductor layer disposed to face the other main surface of the electrode substrate, and a plurality of second structures connecting the second conductor layer and the electrode substrate. And a second support having a body.

An input device according to an embodiment of the present technology includes an operation member, an electrode substrate, and a shield layer.
The operation member has an input operation surface.
The electrode substrate has a plurality of first electrode lines and a plurality of second electrode lines, and a plurality of opposing regions between the plurality of first electrode lines and the plurality of second electrode lines. A plurality of capacitance sensors each formed are arranged in a matrix.
The shield layer includes a conductor film that is provided between the operation member and the electrode substrate and shields at least some of the wiring regions of the plurality of second electrode lines that communicate between the plurality of opposing regions. .

An electronic device according to an embodiment of the present technology includes a display element, an electrode substrate, and a shield layer.
The display element has an input operation surface.
The electrode substrate has a plurality of first electrode lines and a plurality of second electrode lines, and a plurality of opposing regions between the plurality of first electrode lines and the plurality of second electrode lines. A plurality of capacitance sensors each formed are arranged in a matrix.
The shield layer includes a conductor film that is provided between the display element and the electrode substrate and shields at least some of the wiring regions of the plurality of second electrode lines that communicate between the plurality of opposing regions. .

As described above, according to the present technology, it is possible to suppress a decrease in detection accuracy due to the influence of external electromagnetic noise.
Note that the effects described here are not necessarily limited, and may be any of the effects described in the present disclosure.

1 is a schematic cross-sectional view of an input device according to a first embodiment of the present technology. It is a disassembled perspective view of the said input device. It is a schematic sectional drawing of the principal part of the said input device. It is a block diagram of the electronic device using the said input device. It is a schematic sectional drawing which shows the mode of the force added to the said 1st and 2nd structure when the point of the 1st surface of the said input device is pressed below to the Z-axis direction with the operation element. The typical principal part sectional view showing the mode of the above-mentioned input device when the point on the 1st structure of the above-mentioned 1st surface receives operation by a manipulator, and the output outputted from the above-mentioned detection part at that time It is a figure which shows an example of a signal. It is a principal part top view of the electrode substrate in the said input device. It is a principal part top view of the 1st wiring board which comprises the said electrode substrate. It is a principal part top view of the 2nd wiring board which comprises the said electrode substrate. It is a top view which shows roughly the whole said 1st wiring board. A is a schematic sectional view of an input device according to a second embodiment of the present technology, and B is a sectional view showing an enlarged main part of the input device. It is a principal part top view which shows the structure of the 1st electrode line in the said input device, and a 2nd electrode line. A is a plan view of the main part of the electrode substrate in the input device, and B is a cross-sectional view taken along the line AA. It is typical sectional drawing for demonstrating the structure of the detection part which concerns on the said input device. A is a plan view of an essential part of an electrode substrate having a shield layer, B is a sectional view taken along line B1-B1, and C is a sectional view taken along line C1-C1. A is a plan view of an essential part of an electrode substrate having a shield layer, B is a sectional view taken along line B2-B2, and C is a sectional view taken along line C2-C2. It is a principal part top view which shows the modification of a structure of a 1st electrode wire. It is a schematic plan view which shows the other structural example of a 1st electrode line. It is a principal part top view which shows the modification of a structure of a 2nd electrode wire. It is a schematic sectional drawing which shows the modification of a structure of the said input device.

Hereinafter, embodiments of the present technology will be described with reference to the drawings.

<First Embodiment>
1 is a schematic cross-sectional view of an input device 100 according to the first embodiment of the present technology, FIG. 2 is an exploded perspective view of the input device 100, FIG. 3 is a schematic cross-sectional view of a main part of the input device 100, and FIG. 4 is a block diagram of an electronic device 70 using the device 100. FIG. Hereinafter, the configuration of the input device 100 of the present embodiment will be described. In the figure, the X-axis and the Y-axis indicate directions orthogonal to each other (in-plane direction of the input device 100), and the Z-axis indicates a direction orthogonal to the X-axis and Y-axis (thickness direction or vertical direction of the input device 100). Is shown.

[Input device]
The input device 100 includes a flexible display (display element) 11 that receives an operation by a user and a sensor device 1 that detects the user's operation. The input device 100 is configured as a flexible touch panel display, for example, and is incorporated in an electronic device 70 described later. The sensor device 1 and the flexible display 11 have a flat plate shape extending in a direction perpendicular to the Z axis.

The flexible display 11 has a first surface 110 and a second surface 120 opposite to the first surface 110. The flexible display 11 has both a function as an input operation unit in the input device 100 and a function as a display unit. In other words, the flexible display 11 causes the first surface 110 to function as an input operation surface and a display surface, and displays an image corresponding to an operation by the user from the first surface 110 facing upward in the Z-axis direction. On the first surface 110, for example, an image corresponding to a keyboard, a GUI (Graphical User Interface), or the like is displayed. Examples of the operator that performs an operation on the flexible display 11 include a finger and a pen (stylus pen).

The specific configuration of the flexible display 11 is not particularly limited. For example, as the flexible display 11, so-called electronic paper, an organic EL (electroluminescence) panel, an inorganic EL panel, a liquid crystal panel, or the like can be employed. The thickness of the flexible display 11 is not particularly limited, and is about 0.1 mm to 1 mm, for example.

The sensor device 1 includes a metal film (first conductor layer) 12, a conductor layer (second conductor layer) 50, an electrode substrate 20, a first support 30, and a second support 40. . The sensor device 1 is disposed on the second surface 120 side of the flexible display 11.

The metal film 12 is configured in a deformable sheet shape. The conductor layer 50 is disposed to face the metal film 12. The electrode substrate 20 includes a plurality of first electrode lines 210 and a plurality of second electrode lines 220 that are arranged to face the plurality of first electrode lines 210 and intersect the plurality of first electrode lines 210. And disposed so as to be deformable between the metal film 12 and the conductor layer 50, and it is possible to electrostatically detect a change in the distance between the metal film 12 and the conductor layer 50. The first support 30 includes a plurality of first structures 310 that connect the metal film 12 and the electrode substrate 20, and a first space formed between the plurality of first structures 310. 330. The second support body 40 is disposed between a plurality of adjacent first structure bodies 310, respectively, and a plurality of second structure bodies 410 connecting the conductor layer 50 and the electrode substrate 20, and a plurality of second structure bodies And a second space portion 430 formed between the structures 410.

The sensor device 1 (input device 100) according to the present embodiment includes a gap between the metal film 12 and the electrode substrate 20 by the input operation on the first surface 110 of the flexible display 11, and the conductor layer 50 and the electrode substrate 20. The input operation is detected by electrostatically detecting a change in the distance. The input operation is not limited to a conscious pressing (push) operation on the first surface 110 but may be a contact (touch) operation. That is, the input device 100 can detect even a minute pressing force (for example, about several tens of g) applied by a general touch operation, as will be described later. The touch operation is configured to be possible.

The input device 100 includes a control unit 60, and the control unit 60 includes a calculation unit 61 and a signal generation unit 62. The calculation unit 61 detects an operation by the user based on the change in the capacitance of the detection unit 20s. The signal generator 62 generates an operation signal based on the detection result by the calculator 61.

The electronic device 70 illustrated in FIG. 4 includes a controller 710 that performs processing based on an operation signal generated by the signal generation unit 62 of the input device 100. The operation signal processed by the controller 710 is output to the flexible display 11 as an image signal, for example. The flexible display 11 is connected to a drive circuit mounted on the controller 710 via a flexible wiring board 113 (see FIG. 2). The drive circuit may be mounted on the wiring board 113.

Typically, the electronic device 70 includes a mobile phone, a smart phone, a notebook PC (personal computer), a tablet PC, a portable game machine, and the like. It can also be applied to stationary electronic devices such as automatic teller machines) and automatic ticket vending machines.

The flexible display 11 is configured as a part of the operation member 10 of the input device 100 in the present embodiment. That is, the input device 100 includes the operation member 10, the electrode substrate 20, the first support body 30, the second support body 40, and the conductor layer 50. Hereinafter, each of these elements will be described.

(Operation member)
The operation member 10 has a laminated structure of the flexible display 11 including the first surface 110 and the second surface 120 and the metal film 12. That is, the operation member 10 includes a first surface 110 that receives an operation by a user, and a second surface 120 that is formed with the metal film 12 and is opposite to the first surface 110, and is configured in a deformable sheet shape. Is done.

The metal film 12 is configured in a sheet shape that can be deformed following the deformation of the flexible display 11, and is formed of a metal foil or a mesh material such as Cu (copper) or Al (aluminum), for example. The thickness of the metal film 12 is not particularly limited and is, for example, several tens of nm to several tens of μm. The metal film 12 is connected to a predetermined reference potential (for example, ground potential). Thereby, the metal film 12 exhibits a certain shield function against electromagnetic waves when mounted on the electronic device 70. That is, for example, intrusion of electromagnetic waves from other electronic components or the like mounted on the electronic device 70 and leakage of electromagnetic waves from the input device 100 can be suppressed, which can contribute to the stability of the operation as the electronic device 70.

Note that the constituent material of the metal film 12 is not limited to a metal, and may be a metal oxide material such as ITO, or another conductive material such as carbon.

For example, as shown in FIG. 3, the metal film 12 is formed by attaching an adhesive adhesive layer 13 on which a metal foil is formed to the flexible display 11. The material of the adhesive layer 13 is not particularly limited as long as it has adhesiveness, but may be a resin film to which a resin material is applied. Alternatively, it may be composed of a vapor deposition film or a sputtered film directly formed on the flexible display 11, or may be a coating film such as a conductive paste printed on the surface of the flexible display 11.

(Conductor layer)
The conductor layer 50 constitutes the lowermost part of the input device 100 and is disposed to face the metal film 12 in the Z-axis direction. The conductor layer 50 also functions as a support plate of the input device 100, for example, and is configured to have higher bending rigidity than the operation member 10 and the electrode substrate 20, for example. The conductor layer 50 may be made of a metal plate containing, for example, an Al alloy, an Mg (magnesium) alloy, or other metal material, or a conductor plate such as a carbon fiber reinforced plastic. Alternatively, the conductor layer 50 may have a laminated structure in which a conductor film such as a plating film, a vapor deposition film, a sputtering film, or a metal foil is formed on an insulating layer such as a plastic material. Moreover, the thickness of the conductor layer 50 is not specifically limited, For example, it is about 0.3 mm.

The conductor layer 50 is connected to a predetermined reference potential (for example, ground potential). Thus, the conductor layer 50 exhibits a function as an electromagnetic shield layer when mounted on the electronic device 70. That is, for example, intrusion of electromagnetic waves from other electronic components or the like mounted on the electronic device 70 and leakage of electromagnetic waves from the input device 100 can be suppressed, which can contribute to the stability of the operation as the electronic device 70.

(Electrode substrate)
The electrode substrate 20 is configured by a laminate of a first wiring substrate 21 having first electrode lines 210 and a second wiring substrate 22 having second electrode lines 220.

The first wiring board 21 includes a first base material 211 (see FIG. 2) and a plurality of first electrode wires (X electrodes) 210. The first base material 211 (first insulating layer) is made of, for example, a flexible sheet material, specifically, an electrically insulating plastic sheet (film) such as PET, PEN, PC, PMMA, and polyimide. Consists of. The thickness of the first base material 211 is not particularly limited, and is, for example, several tens of μm to several hundreds of μm.

The plurality of first electrode wires 210 are integrally provided on one surface of the first base material 211. The plurality of first electrode lines 210 are arranged at a predetermined interval along the X-axis direction and are formed substantially linearly along the Y-axis direction. Each of the first electrode wires 210 is drawn out to the edge of the first base material 211 and connected to different terminals. In addition, each of the first electrode lines 210 is electrically connected to the control unit 60 via these terminals.

In addition, each of the plurality of first electrode lines 210 may be configured by a single electrode line, or may be configured by a plurality of electrode groups arranged along the X-axis direction. In addition, a plurality of electrode lines constituting each electrode group may be connected to a common terminal, or may be connected to two or more different terminals.

On the other hand, the second wiring board 22 has a second base material 221 (see FIG. 2) and a plurality of second electrode lines (Y electrodes) 220. The second base material 221 (second insulating layer) is composed of, for example, a flexible sheet material like the first base material 211, and specifically, PET, PEN, PC, PMMA, polyimide, etc. It consists of an electrically insulating plastic sheet (film). The thickness of the second base material 221 is not particularly limited and is, for example, several tens of μm to several hundreds of μm. The second wiring board 22 is disposed to face the first wiring board 21.

The plurality of second electrode lines 220 are configured in the same manner as the plurality of first electrode lines 210. That is, the plurality of second electrode lines 220 are integrally provided on one surface of the second base material 221, arranged at a predetermined interval along the Y-axis direction, and in the X-axis direction. It is formed almost linearly along. Each of the plurality of second electrode lines 220 may be configured by a single electrode line or may be configured by a plurality of electrode groups arranged along the Y-axis direction.

Each of the second electrode wires 220 is drawn out to the edge of the second base material 221 and connected to a different terminal. The plurality of electrode lines constituting each electrode group may be connected to a common terminal, or may be divided and connected to two or more different terminals. Each of the second electrode lines 220 is electrically connected to the control unit 60 via these terminals.

The first electrode line 210 and the second electrode line 220 may be formed using a conductive paste or the like by a printing method such as screen printing, gravure offset printing, or ink jet printing, or a metal foil or metal layer photolithography technique. It may be formed by the patterning method used. Moreover, it can be set as the structure which has flexibility as the electrode substrate 20 whole because both the 1st and

2nd base materials

211 and 221 are comprised with the sheet | seat which has flexibility.

As shown in FIG. 3, the electrode substrate 20 has an adhesive layer 23 that joins the first wiring substrate 21 and the second wiring substrate 22 to each other. The adhesive layer 23 has electrical insulating properties, and is made of, for example, an adhesive cured material, an adhesive material such as an adhesive tape, or the like.

As described above, in the electrode substrate 20 of the present embodiment, the plurality of first electrode lines 210 and the plurality of second electrode lines 220 are separated from each other in the thickness direction (Z-axis direction) of the electrode substrate 20. Arranged. Accordingly, in the electrode substrate 20, a plurality of detection units 20s (capacitance sensors) formed in a plurality of opposing regions of the plurality of first electrode lines 210 and the plurality of second electrode lines 220 are arranged in a matrix. . The plurality of detection units 20 s are respectively formed in intersection regions of the plurality of first electrode lines 210 and the plurality of second electrode lines 220.

In the present embodiment, the plurality of first electrode lines 210 are disposed closer to the operation member 10 than the plurality of second electrode lines 220. However, the present invention is not limited to this, and a plurality of second electrode lines 220 are provided. The first electrode wire 210 may be disposed closer to the operation member 10 side.

(Control part)
The controller 60 is electrically connected to the electrode substrate 20. More specifically, the control unit 60 is connected to each of the plurality of first and

second electrode wires

210 and 220 via terminals. The control unit 60 configures a signal processing circuit capable of generating information related to an input operation on the first surface 110 based on outputs of the plurality of detection units 20s. The control unit 60 acquires the capacitance change amount of each detection unit 20s while scanning each of the plurality of detection units 20s at a predetermined cycle, and generates information related to the input operation based on the capacitance change amount.

The control unit 60 is typically composed of a computer having a CPU / MPU, a memory, and the like. The control unit 60 may be composed of a single chip component or a plurality of circuit components. The control unit 60 may be mounted on the input device 100 or may be mounted on the electronic device 70 in which the input device 100 is incorporated. In the former case, for example, it is mounted on a flexible wiring board connected to the electrode substrate 20. In the latter case, the electronic device 70 may be integrated with the controller 710.

The control unit 60 includes the calculation unit 61 and the signal generation unit 62 as described above, and executes various functions according to a program stored in a storage unit (not shown). The calculation unit 61 determines the operation position in the XY coordinate system on the first surface 110 based on electrical signals (input signals) output from the first and

second electrode lines

210 and 220 of the electrode substrate 20. The signal generation unit 62 calculates and generates an operation signal based on the result. Thereby, an image based on an input operation on the first surface 110 can be displayed on the flexible display 11.

3 and 4 calculates the XY coordinates of the operation position by the operator on the first surface 110 based on the output from each detection unit 20s to which the unique XY coordinates are assigned. Specifically, the calculation unit 61 determines whether each X electrode, Y is based on the amount of change in capacitance obtained from each X electrode (first electrode line 210) and Y electrode (second electrode line 220). The amount of change in capacitance in each detection unit 20s formed in the electrode intersection region (opposite region) is calculated. The XY coordinates of the operation position by the operator can be calculated from the ratio of the change in capacitance of each detection unit 20s.

For example, the calculation unit 61 applies the detection electrode (E2) obtained when a drive signal is applied to the electrode line corresponding to the drive electrode (E1) of the first and

second electrode lines

210 and 220 at a predetermined cycle. Based on the output from the corresponding electrode wire, the capacitance change amount of each detection unit 20s is acquired. The signal generation unit 62 generates information (control signal) related to the input operation on the input operation surface based on the output of the calculation unit 61 (capacity change amount of each detection unit 20s).

In the present embodiment, the first electrode line 210 is the drive electrode (E1), and the second electrode line 220 is the detection electrode (E2). Since the drive electrode (E1) has a more stable potential than the detection electrode (E2), it is less susceptible to electromagnetic noise than the detection electrode (E2). From such a viewpoint, the first electrode wire 210 also has a function as a shield layer that protects the second electrode wire 220 from electromagnetic noise.

Further, the calculation unit 61 can determine whether or not the first surface 110 is being operated. Specifically, for example, when the amount of change in the capacitance of the entire detection unit 20s or the amount of change in the capacitance of each detection unit 20s is equal to or greater than a predetermined threshold, the first surface 110 receives an operation. Can be determined. Further, by providing two or more threshold values, for example, it is possible to distinguish and determine a touch operation and a (conscious) push operation. Furthermore, it is also possible to calculate the pressing force based on the amount of change in capacitance of the detection unit 20s.

The signal generation unit 62 generates a predetermined operation signal based on the calculation result of the calculation unit 61. The operation signal is, for example, an image control signal for generating a display image to be output to the flexible display 11, an operation signal corresponding to a key of a keyboard image displayed at an operation position on the flexible display 11, or a GUI (Graphical User It may be an operation signal related to an operation corresponding to (Interface).

Here, the input device 100 is configured to change the distance between each of the metal film 12 and the conductor layer 50 and the electrode substrate 20 (detection unit 20s) by an operation on the first surface 110. Two supports 30, 40 are provided. Hereinafter, the first and

second supports

30 and 40 will be described.

(Basic configuration of first and second supports)
The first support 30 is disposed between the operation member 10 and the electrode substrate 20. The first support 30 has a plurality of first structures 310, a first frame 320, and a first space 330. In this embodiment, the 1st support body 30 is joined on the electrode substrate 20 via the contact bonding layer 35 (refer FIG. 3). The adhesive layer 35 may be an adhesive, or may be composed of an adhesive material such as an adhesive and an adhesive tape.

As shown in FIG. 3, the first support 30 according to the present embodiment is formed at a predetermined position on the base material 31, the structural layer 32 provided on the surface (upper surface) of the base material 31, and the structural layer 32. A stacked structure of a plurality of bonded portions 341 is provided. The base material 31 is composed of an electrically insulating plastic sheet such as PET, PEN, or PC. The thickness of the base material 31 is not particularly limited, and is, for example, several μm to several 100 μm.

The structural layer 32 is made of an electrically insulating resin material such as UV resin, and forms a plurality of first convex portions 321, second convex portions 322, and concave portions 323 on the base material 31. Each of the first convex portions 321 has, for example, a columnar shape, a prismatic shape, a frustum shape, or the like protruding in the Z-axis direction, and is arranged on the substrate 31 at a predetermined interval. The second convex portion 322 is formed with a predetermined width so as to surround the periphery of the base material 31.

The structural layer 32 is made of a material having such a rigidity that the electrode substrate 20 can be deformed by an input operation on the first surface 110. It may be made of a material. That is, the elastic modulus of the structural layer 32 is not particularly limited, and can be appropriately selected as long as the desired operational feeling and detection sensitivity are obtained.

The concave portion 323 is composed of a flat surface formed between the first and second

convex portions

321 and 322. That is, the space area on the recess 323 constitutes the first space 330. Further, in the present embodiment, an adhesion preventing layer 342 made of UV resin having low adhesiveness or the like is formed on the recess 323 (not shown in FIG. 3). The shape of the adhesion preventing layer 342 is not particularly limited, and may be formed in an island shape, or may be formed as a flat film on the recess 323.

Further, on each of the first and second

convex portions

321 and 322, a joint portion 341 made of an adhesive resin material or the like is formed. That is, each of the first structures 310 includes a stacked body of the first convex portion 321 and the joint portion 341 formed thereon, and each of the first frame bodies 320 includes the second convex portion 322. And a joined body 341 formed thereon. Thereby, the thickness (height) of the first structure 310 and the first frame 320 is configured to be substantially the same, and is in the range of several μm to several 100 μm, for example, in the present embodiment. Note that the height of the adhesion prevention layer 342 is not particularly limited as long as it is lower than the height of the first structure 310 and the first frame 320, and is lower than, for example, the first and second

convex portions

321 and 322. Formed to be.

The plurality of first structures 310 are arranged corresponding to the arrangement of the detection units 20s. In the present embodiment, the plurality of first structures 310 are disposed, for example, opposite to the center of each of the plurality of detection units 20s in the Z-axis direction. May be arranged at an offset position. Moreover, the number of the structures 310 facing each detection unit 20s is not limited to one, and may be a plurality.

The first frame 320 is formed so as to surround the periphery of the first support 30 along the periphery of the electrode substrate 20. The length of the first frame 320 in the short direction, that is, the width is not particularly limited as long as the strength of the entire first support 30 and the input device 100 can be sufficiently secured.

On the other hand, the second support body 40 is disposed between the electrode substrate 20 and the conductor layer 50. The second support 40 includes a plurality of second structures 410, a second frame 420, and a second space 430.

As shown in FIG. 3, in the second support body 40 according to this embodiment, the second structure body 410 and the second frame body 420 are directly formed on the conductor layer 50. The second structure body 410 and the second frame body 420 are made of, for example, an insulative resin material having adhesiveness, and also serve as a joint portion that joins between the conductor layer 50 and the electrode substrate 20. The thicknesses of the second structural body 410 and the second frame body 420 are not particularly limited, and are, for example, several μm to several hundred μm.

The second structures 410 are respectively disposed between the adjacent first structures 310. That is, the second structure 410 is disposed between the adjacent detection units 20s. However, the present invention is not limited to this, and the second structure 410 may be disposed so as to face each detection unit 20s.

The second frame 420 is formed so as to surround the periphery of the second support 40 along the periphery of the conductor layer 50. The width of the second frame body 420 is not particularly limited as long as the strength of the second support body 40 and the input device 100 as a whole can be sufficiently ensured. For example, the width of the second frame body 420 is configured to be substantially the same as that of the first frame body 320.

Further, the elastic modulus of the second structure 410 is not particularly limited, as is the case with the structural layer 32 that constitutes the first structure 310. That is, it can be appropriately selected within a range in which a desired operation feeling and detection sensitivity can be obtained, and may be made of an elastic material that can be deformed together with the electrode substrate 20 during an input operation.

The second space 430 is formed between the second structures 410 and constitutes a space region around the second structures 410 and the second frame 420. In the present embodiment, the second space 430 accommodates each detection unit 20s and each first structure 310 when viewed from the Z-axis direction.

As described above, the first and

second support bodies

30 and 40 according to the present embodiment are
(1) having first and

second structures

310 and 410 and first and

second spaces

330 and 430;
(2) The first structure 310 and the second structure 410 do not overlap with each other when viewed from the Z-axis direction, and the first structure 310 is disposed on the second space 430.
Therefore, as shown below, the metal film 12 and the conductor layer 50 can be deformed even by a minute pressing force of about several tens of grams during operation.

(Operation of the first and second supports)
FIG. 5 is a schematic cross section showing the state of the force applied to the first and

second structures

310 and 410 when the point P on the first surface 110 is pressed downward in the Z-axis direction by the operating element h. FIG. The white arrow in the figure schematically shows the magnitude of the force downward in the Z-axis direction (hereinafter simply referred to as “downward”). In FIG. 14, aspects such as the bending of the metal film 12 and the electrode substrate 20 and the elastic deformation of the first and

second structures

310 and 410 are not shown. In the following description, even when the user performs a touch operation that is not conscious of pressing, since a minute pressing force is actually applied, these input operations will be collectively described as “pressing”.

For example, when the point P on the first space 330p0 is pressed downward by the force F, the metal film 12 immediately below the point P bends downward. Accordingly, the first structures 310p1 and 310p2 adjacent to the first space 330p0 receive the force F1, elastically deform in the Z-axis direction, and the thickness slightly decreases. Further, due to the bending of the metal film 12, the first structures 310p3 and 310p4 adjacent to the first structures 310p1 and 310p2 also receive a force F2 smaller than F1. Further, force is applied to the electrode substrate 20 by the forces F1 and F2, and the electrode substrate 20 bends downward about the region immediately below the first structures 310p1 and 310p2. As a result, the second structure 410p0 disposed between the first structures 310p1 and 310p2 receives the force F3, elastically deforms in the Z-axis direction, and the thickness slightly decreases. Further, the second structure 410p1, which is disposed between the first structures 310p1, 310p3, and the second structure 410p2, which is disposed between the first structures 310p2, 310p4, also have F4 smaller than F3, respectively. receive.

Thus, force can be transmitted in the thickness direction by the first and

second structures

310 and 410, and the electrode substrate 20 can be easily deformed. Further, the metal film 12 and the electrode substrate 20 are bent, and the influence of the pressing force is exerted in the in-plane direction (direction parallel to the X-axis direction and the Y-axis direction). A force can also be exerted on the neighboring first and

second structures

310 and 410.

Further, with respect to the above (1), the metal film 12 and the electrode substrate 20 can be easily deformed by the first and

second space portions

330 and 430. Further, the first and

second structures

310 and 410 configured by columns or the like can apply a high pressure to the electrode substrate 20 with respect to the pressing force of the operation element h, and the electrode substrate 20 can be flexed efficiently. I can do it.

Further, regarding (2) above, since the first and

second structures

310 and 410 are not overlapped when viewed from the Z-axis direction, the first structure 310 has the second space 430 below it. Thus, the electrode substrate 20 can be easily bent.

Hereinafter, an example of the amount of change in the capacitance of the detection unit 20s during a specific operation will be shown.

(Example of detector output)
FIGS. 15A and 15B are schematic cross-sectional views showing the main part of the input device 100 when the first surface 110 is operated by the operator h, and output signals output from the detection unit 20s at that time. It is a figure which shows an example. The bar graph shown along the X-axis in FIGS. 15A and 15B schematically shows the amount of change from the reference value of the capacitance in each detection unit 20s. FIG. 15A shows a mode when the operator h presses on the first structure 310 (310a2), and FIG. 15B shows a mode when the operator h presses on the first space 330 (330b1). The aspect of is shown.

15A, the first structure 310a2 immediately below the operating position receives the most force, and the first structure 310a2 itself is elastically deformed and displaced downward. Due to the displacement, the detection unit 20sa2 directly below the first structure 310a2 is displaced downward. As a result, the detection unit 20sa2 and the conductor layer 50 come close to each other through the second space 430a2. That is, the detection unit 20sa2 obtains the capacitance change amount Ca2 by slightly changing the distance to the metal film 12 and greatly changing the distance to the conductor layer 50. On the other hand, the first structures 310a1 and 310a3 are also slightly displaced downward due to the influence of the bending of the metal film 12, and the amount of change in capacitance in the detection units 20sa1 and 20sa3 is Ca1 and Ca3, respectively.

In the example shown in FIG. 15A, Ca2 is the largest, and Ca1 and Ca3 are substantially the same and smaller than Ca2. That is, as shown in FIG. 15A, the amount of change in capacitance Ca1, Ca2, Ca3 shows a mountain-shaped distribution with Ca2 as the apex. In this case, the calculation unit 61 can calculate the center of gravity and the like based on the ratio of Ca1, Ca2, and Ca3, and can calculate the XY coordinates on the detection unit 20sa2 as the operation position.

On the other hand, in FIG. 15B, the first structures 310b1 and 310b2 in the vicinity of the operation position are slightly elastically deformed and displaced downward due to the bending of the metal film 12. Due to the displacement, the electrode substrate 20 is bent, and the detection units 20sb1 and 20sb2 immediately below the first structures 310b1 and 310b2 are displaced downward. Accordingly, the detection units 20sb1 and 20sb2 and the conductor layer 50 are brought close to each other through the second space portions 430b1 and 430b2. That is, the detection units 20sb1 and 20sb2 obtain the capacitance change amounts Cb1 and Cb2, respectively, by slightly changing the distance to the metal film 12 and relatively changing the distance to the conductor layer 50.

In the example shown in FIG. 15B, Cb1 and Cb2 are substantially the same. Thereby, the calculating part 61 can calculate the XY coordinate between detection part 20sb1, 20sb2 as an operation position.

Thus, according to this embodiment, since both the thickness of the detection unit 20s and the metal film 12, and the detection unit 20s and the conductor layer 50 are variable depending on the pressing force, the capacitance of the detection unit 20s is reduced. The amount of change can be made larger. As a result, it is possible to increase the detection sensitivity of the input operation.

In addition, it is possible to calculate the XY coordinates of the operation position regardless of the operation position on the flexible display 11 on the first structure 310 or the first space 330. That is, when the metal film 12 propagates the influence of the pressing force in the in-plane direction, not only the detection unit 20s just below the operation position but also the detection unit 20s near the operation position when viewed from the Z-axis direction. Changes can be made. Thereby, variation in detection accuracy in the first surface 110 can be suppressed, and high detection accuracy can be maintained over the entire first surface 110.

(Shield layer)
By the way, the flexible display 11 which comprises the operation member 10 is drive-controlled by the controller 710 as mentioned above. The flexible display 11 typically displays an image by controlling light emission of a plurality of pixels arranged in a matrix in the plane. At this time, electromagnetic noise of a level that cannot be ignored by the sensor device 1 may be generated from the pixel circuit that drives each pixel.

As described above, the sensor device 1 has the operation position with respect to the input operation surface (first surface 110) based on the change in the capacitance of the detection unit 20s based on the change in the facing distance to the metal film 12 and the conductor layer 50. The operation amount (pressing force) is configured to be detected. Therefore, when electromagnetic noise enters the detection unit 20s, the detection accuracy of the capacitance change amount of the detection unit 20s decreases, and the problem becomes more prominent as the capacitance change amount is smaller.

On the other hand, it is possible to ensure a certain shield function by the metal film 12 disposed between each detection unit 20s and the flexible display 11. However, since the metal film 12 needs to be formed with a thickness that can be deformed following the input operation on the input operation surface (first surface 110), the thickness of the metal film 12 that can shield electromagnetic noise is always secured. Is not limited. Thus, in an input device that detects an input operation electrostatically, in order to improve detection accuracy, a structure capable of sufficiently protecting the detection unit 20s from electromagnetic noise is essential.

Therefore, the sensor device 1 of the present embodiment has a shield layer S1 for electromagnetically shielding the electrode wires constituting the detection unit 20s from the noise source. The shield layer S1 is provided on the electrode substrate 20 as shown in FIGS.

The shield layer S1 is composed of a conductor film provided on the first base material 211 that supports the plurality of first electrode wires 210. In the present embodiment, the shield layer S 1 is provided on the first base material 211 on the same plane as the plurality of first electrode wires 210. Accordingly, the shield layer S1 can be formed without separately providing a member that supports the shield layer S1. Furthermore, since the shield layer S1 is made of the same material as the plurality of first electrode lines 210, the first electrode line and the shield layer S1 can be formed in the same process.

7 is a plan view of the main part of the electrode substrate 20, FIG. 8 is a plan view of the main part of the first wiring board 21, and FIG.

In the example shown in the figure, the first and

second electrode lines

210 and 220 are each composed of an electrode line group composed of a plurality of thin electrode lines. However, the present invention is not limited to this, and each is composed of a single wide electrode line. May be.

In the present embodiment, the shield layer S1 includes a plurality of electrode lines S11 (third electrode lines) disposed between each of the plurality of first electrode lines 210. The plurality of electrode lines S11 are arranged with a predetermined gap from the first electrode line 210. The plurality of electrode lines S 11 are formed with the same width, and the length of each electrode line S 11 is substantially the same as the length of the first electrode line 210. Each of the plurality of electrode lines S11 is connected to a predetermined reference potential (for example, ground potential) similarly to the metal film 12 and the conductor layer 50.

With the above configuration, the plurality of second electrode lines 220 communicate with each other between the plurality of detection units 20 s (opposite regions between the first electrode lines 210 and the second electrode lines 220) when viewed from the flexible display 11. The wiring region 220b to be shielded is shielded by the shield layer S1 (electrode line S11). Thereby, the wiring region 220b is electromagnetically shielded from the flexible display 11.

Each electrode line S11 may be formed of a conductive paste or the like by a printing method such as screen printing, gravure offset printing or ink jet printing, a metal foil or metal layer, a transparent conductive film material such as ITO, a carbon material, or the like. The conductive material may be formed by a patterning method using a photolithography technique. The thickness of each electrode line S11 is not particularly limited, and is typically formed with a thickness equivalent to that of the first electrode line 210 (for example, several tens of nm to several tens of μm).

Each electrode line S11 is not limited to the example formed in the same process as the first electrode line 210. Each electrode line S 11 may be made of a material different from that of the first electrode line 210, and may be formed with a thickness larger than the thickness of the first electrode line 210.

The region where the wiring region 220b is shielded by the shield layer S1 is adjusted by the width of each electrode line S11 constituting the shield layer S1. Since the shield layer S1 is formed on the same plane as the first electrode line 210, a part of the wiring region 220b is shielded by the shield layer S1.

In order to shield all regions of the wiring region 220b with the shield layer S1, for example, an insulating film that covers the first electrode wire 210 is separately formed, and a shield layer is provided on the insulating film. Good. At this time, the shield layer may be configured to cover at least a part of the wiring region of the first electrode line 210 communicating between the plurality of detection units 20s. In this case, the shield layer may be configured by a lattice-shaped conductor film that is open in a region facing the plurality of detection units 20s.

FIG. 10A is a plan view schematically showing the entire first wiring board 21. The shield layer S1 further includes a wiring part S12 that connects the plurality of electrode lines S11 to each other. The wiring portion S12 is connected to each of the plurality of electrode lines S11 at the edge portion 21a on one long side of the first wiring substrate 21. The wiring part S12 is routed to the edge part 21c on the other long side via the edge part 21b on the short side on the one side of the first wiring board 21. The edge portion 21c is formed with a lead line S12a connected to the wiring portion S12, and is connected to a predetermined reference potential (ground potential) via the control unit 60. As a result, the plurality of electrode lines S11 disposed between the plurality of first electrode lines 210 can be commonly connected to the ground potential.

On the edge portion 21c of the first wiring substrate 21, lead lines 210a connected to each of the plurality of first electrode lines 210 are further formed, and the first electrode lines 210 are connected via the lead lines 210a. Is connected to the control unit 60.

Although not shown, the second wiring board 22 is a lead line connected to each of the plurality of second electrode lines 220, and these lead lines are typically formed on the second wiring board 22. It is formed at the edge on one short side. Therefore, in order to protect at least a part of the lead wires (outer peripheral wiring portions formed outside the detection region where the plurality of detection portions 20s are formed) of the second electrode wires 220 from electromagnetic noise, FIG. As shown in FIG. 10B, it is possible to shield the leader line with the shield layer S provided on the first wiring board 21.

FIG. 10B is a plan view of the first wiring board showing a modified example of the configuration of the shield layer S1. The shield layer S 1 further includes a strip-shaped portion S 11 b formed on the edge portion 21 b of the first wiring substrate 21. The band-shaped portion S11b is connected between the wiring portion S12 and the lead-out line S12a, and a region between the electrode line 210b located closest to the edge portion 21b and the edge portion among the plurality of first electrode lines 210. Cover in a solid form. Thereby, it becomes possible to protect the outer periphery wiring part of the 2nd electrode wire 220 located just under strip | belt-shaped part S11b from electromagnetic noise.

Here, as one of the devices that affect the detection sensitivity of the sensor device 1, there is a flexible display 11. If the metal film 12, the conductor layer 50, and the shield layer S1 are connected only to the ground of the control unit 60, the flexible display 11 may affect the ground potential of the control unit 60. There is a possibility that the shield effect cannot be fully exhibited. Therefore, by connecting the metal film 12, the conductor layer 50, and the shield layer S1 to the ground of the controller 710 to which the flexible display 11 is connected, a more stable ground potential can be maintained and the electromagnetic shielding effect is improved. Can be made. Furthermore, the electromagnetic shielding effect can also be improved by connecting the metal film 12, the conductor layer 50, and the shield layer S1 with more contacts.

<Second Embodiment>
Subsequently, a second embodiment of the present technology will be described.

In the first embodiment described above, the plurality of first electrode lines and the plurality of second electrode lines are separated from each other in the thickness direction of the electrode substrate, and a plurality of detection units ( Capacitive sensor) was configured. In contrast, in the present embodiment, the plurality of first electrode lines and the plurality of second electrode lines are separated from each other in the plane of the electrode substrate, and a plurality of detection units ( Capacitance sensor) is configured.

FIG. 11A is a schematic cross-sectional view of an input device 100C according to the second embodiment of the present technology, and FIG. 11B is an enlarged cross-sectional view illustrating a main part of the input device 100C. This embodiment is different from the first embodiment in that the electrode substrate 20C electrostatically detects a change in the distance between the metal film 12 and the conductor layer 50 by the amount of change in capacitive coupling in the XY plane. Is different. That is, the Y electrode 220C has a facing portion that faces the X electrode 210C and the electrode substrate 20C in the in-plane direction, and the facing portion constitutes the detection unit 20Cs.

The electrode substrate 20C includes a base material 211C on which a plurality of first electrode lines (X electrodes) 210C and a plurality of second electrode lines (Y electrodes) 220C are arranged, and the plurality of X electrodes 210C and Y electrodes 220C are arranged on the same plane.

An example of the configuration of the X electrode (first electrode line) 210C and the Y electrode (second electrode line) 220C will be described with reference to FIGS. 12A and 12B. Here, each X electrode 210C and each Y electrode 220C respectively includes a plurality of comb-like unit electrode bodies (first unit electrode bodies) 210m and a plurality of unit electrode bodies (second unit electrode bodies) 220m. An example is shown in which one unit electrode body 210m and one unit electrode body 220m form each detector 20Cs.

As shown in FIG. 12A, the X electrode 210C includes a plurality of unit electrode bodies 210m, an electrode wire portion 210p, and a plurality of connection portions 210z. The electrode line portion 210p extends in the Y-axis direction. The plurality of unit electrode bodies 210m are arranged at regular intervals in the Y-axis direction. The electrode wire portion 210p and the unit electrode body 210m are disposed with a predetermined distance therebetween, and the two are connected by a connecting portion 210z.

The unit electrode body 210m has a comb-like shape as a whole as described above. Specifically, the unit electrode body 210m includes a plurality of sub-electrodes 210w and a connecting portion 210y. The plurality of sub-electrodes 210w extend in the X-axis direction. Adjacent sub-electrodes 210w are separated by a predetermined distance. One end of the plurality of sub-electrodes 210w is connected to a connecting portion 210y that extends in the X-axis direction.

As shown in FIG. 12B, the Y electrode 220C includes a plurality of unit electrode bodies 220m, an electrode line portion 220p, and a plurality of connection portions 220z. The electrode wire portion 220p extends in the X-axis direction. The plurality of unit electrode bodies 220m are arranged at regular intervals in the X-axis direction. The electrode wire portion 220p and the unit electrode body 220m are arranged with a predetermined distance therebetween, and the two are connected by a connecting portion 220z. In addition, the connection part 220z may be omitted, and a configuration in which the unit electrode body 220m is directly provided on the electrode line part 220p may be employed.

The unit electrode body 220m has a comb-like shape as a whole as described above. Specifically, the unit electrode body 220m includes a plurality of sub-electrodes 220w and a connecting part 220y. The plurality of sub-electrodes 220w extend in the X-axis direction. Adjacent sub-electrodes 220w are separated by a predetermined distance. One ends of the plurality of sub-electrodes 220w are connected to a connecting portion 220y that extends in the Y-axis direction.

As shown in FIG. 13A, each detection unit 20Cs is formed in a region where each unit electrode body 210m and each unit electrode body 220m are combined with each other. The plurality of sub-electrodes 210w of the unit electrode body 210m and the plurality of sub-electrodes 220w of the unit electrode body 220m are alternately arranged in the Y-axis direction. That is, the sub-electrodes 210w and 220w are arranged to face each other in the in-plane direction (for example, the Y-axis direction) of the electrode substrate 20C.

FIG. 13B is a cross-sectional view seen from the direction AA in FIG. 13A. Similar to the first embodiment, the Y electrode 220C is provided so as to intersect the X electrode 210C, but is formed on the same plane as the X electrode 210C. Therefore, as shown in FIG. 13B, the region where the X electrode 210C and the Y electrode 220C intersect is configured such that the X electrode 210C and the Y electrode 220C do not directly contact each other. That is, the insulating layer 220r is provided on the electrode line portion 210p of the X electrode 210C and the electrode line portion 220p of the Y electrode 220C. A jumper wiring portion 220q is provided in a region where the X electrode 210C and the Y electrode 220C intersect so as to straddle the insulating layer 220r. The electrode wire portion 220p is connected by the jumper wiring portion 220q.

FIG. 14 is a schematic cross-sectional view for explaining the configuration of the detection unit 20Cs according to the present embodiment. In the example shown in the figure, in the detection unit 20Cs, the sub electrode 210w1 and the sub electrode 220w1, the sub electrode 220w1 and the sub electrode 210w2, the sub electrode 210w2 and the sub electrode 220w2, the sub electrode 220w2 and the sub electrode 210w3, and the sub electrode 210w3 and the sub electrode 210w3 Each of the electrodes 220w3 is capacitively coupled. That is, with the base material 211C as a dielectric layer, the capacitances Cc11, Cc12, Cc13, Cc14, and Cc15 between the sub-electrodes are the metal film 12, the conductor layer 50, and the first and second electrode lines 210C including the sub-electrodes. , 220C is variably configured according to capacitive coupling.

The above configuration eliminates the need for the second base material and the adhesive layer of the electrode substrate, and contributes to reducing the thickness of the input device 100C. In addition, many sub-electrodes are capacitively coupled to each other, and the distance between the sub-electrodes that are capacitively coupled can be reduced. Thereby, the capacitive coupling amount as the whole input device 100C can be increased, and detection sensitivity can be improved.

The sensor device of the present embodiment also has a shield layer S2 for electromagnetically shielding the electrode wires constituting the detection unit 20Cs from the noise source. The shield layer S2 is provided on the electrode substrate 20C as shown in FIGS. 15A to 15C.

15A is a plan view of the main part of the electrode substrate 20C, FIG. 15B is a cross-sectional view taken along line B1-B1 in FIG. 15A, and FIG. 15C is a cross-sectional view taken along line C1-C1 in FIG.

As shown in FIG. 15A, the shield layer S2 includes at least a part of the first conductor film S21 covering the electrode line part 210p of the first electrode line 210C and the electrode line part 220p of the second electrode line 220C. And a second conductor film S22 to be coated. These

electrode line portions

210p and 220p correspond to the wiring regions of the first and

second electrode lines

210 and 220 that connect the plurality of detection portions 20Cs.

The shield layer S2 includes an insulating film disposed between the first conductor film S21 and the electrode line portion 210p, and an insulating film disposed between the second conductor film S22 and the electrode line portion 220p. Have each. In the present embodiment, each of the insulating films corresponds to the insulating layer 220r that covers the

electrode wire portions

210p and 220p.

That is, in the present embodiment, the shield layer S2 is provided on the same plane as the jumper wiring part 220q and the insulating layer 220r. The first and second conductor films S21 and S22 are provided on the same plane as the jumper wiring portion 220q. Therefore, the first and second conductor films S21, S22 and the jumper wiring part 220q are formed in the same process by configuring the first and second conductor films S21, S22 with the same material as the jumper wiring part 220q. It becomes possible. That is, in this example, after forming the first electrode line 210C and the second electrode line 220C, the jumper wiring part 220q and the first electrode at the intersection of the first electrode line 210C and the second electrode line 220C. It is possible to simultaneously form the insulating layer 220r existing between the lines 210C and the insulating layer 220r covering the first electrode line 210C and the second electrode line 220C. Further, thereafter, the jumper wiring part 220q and the first and second conductor films S21 and S22 described above can be formed simultaneously. The formation method is not particularly limited, and a printing method such as screen printing is typically applicable.

In order to avoid electrical contact between the first and second conductor films S21 and S22 and the jumper wiring part 220q, the shield layer S2 has an opening S20 that exposes the jumper wiring part 220q. Of course, the present invention is not limited to this, and the shield effect may be improved by covering the jumper wiring portion 220q with the shield layer S. In this case, the configuration of the shield layer S3 shown in FIGS. 16A to 16C can be employed.

16A is a plan view of the main part of the electrode substrate 20C, FIG. 16B is a cross-sectional view taken along line B2-B2 in FIG. 16A, and FIG. 16C is a cross-sectional view taken along line C2-C2 in FIG.

In this example, after forming the jumper wiring part 220q, the insulating film 220r1 covering the jumper wiring part 220q is formed, and the first and second conductor films S21 and S22 are respectively formed on the insulating film 220r1. It is formed. That is, the shield layer S3 in this example includes the first and second conductor films S21 and S22, and the insulating film 220r1 disposed between the conductor films S21 and S22 and the

electrode line portions

210p and 220p.

As mentioned above, although embodiment of this technique was described, this technique is not limited only to the above-mentioned embodiment, Of course, various changes can be added within the range which does not deviate from the summary of this technique.

For example, in the first embodiment described above, the first electrode line 210 is configured by a linear electrode line or a group of electrode lines, but is not limited thereto, and various shapes of electrodes can be employed.

For example, as shown in FIG. 17, each of the first electrode lines 210D may have a plurality of unit electrode bodies 210Dm. The unit electrode body 210Dm is formed in a facing region intersecting with the second electrode line, and constitutes a capacitance sensor. The unit electrode body 210Dm of the X electrode 210D is composed of a plurality of sub-electrodes, but may be composed of a flat solid electrode.

The configuration of the unit electrode body is not limited to the above example, and various types as shown in FIGS. 18 (A) to (P) can be employed.

Similarly, for the plurality of second electrode lines 220, an electrode line 220D configured by a group of electrode lines each composed of a plurality of electrode thin lines may be employed as shown in FIG. 19A, or as shown in FIG. 19B. Electrode wires 220E each having a plurality of unit electrode bodies may be employed. Alternatively, as shown in FIG. 19C, each may be configured by a single electrode line 220F.

The shield layers S1 and S2 for shielding the detection unit 20s from electromagnetic noise are arranged between the flexible display 11 and the detection unit 20s, but the noise source is on the conductor layer 50 side (for example, the input device). In the case where a wiring board such as a driving circuit is installed), a shield layer may also be arranged on the back side of the electrode substrate.

In the above embodiments, the configuration in which the electrode substrate 20 is supported by the pair of

support bodies

30 and 40 has been described, but only one of them may be used. FIG. 20 shows a configuration example of an input device in which the second support 40 is omitted.

In each of the above embodiments, the input device including the first and

second supports

30 and 40 has been described as an example. However, the input device including only one of these supports, or The present technology can also be applied to an input device that does not include the support.

Furthermore, the flexible display 11 has been described as an example of the operation member 10, but the present invention is not limited to this, and the present technology can be applied to, for example, a keyboard on which a key arrangement is displayed.

In addition, this technique can also take the following structures.
(1) It has a plurality of first electrode lines and a plurality of second electrode lines, and is formed in a plurality of opposing regions of the plurality of first electrode lines and the plurality of second electrode lines, respectively. An electrode substrate in which a plurality of capacitive sensors are arranged in a matrix,
A sensor device comprising: a shield layer that is provided on the electrode substrate and includes a conductor film that shields at least a part of a wiring region of the plurality of second electrode lines communicating between the plurality of opposing regions.
(2) The sensor device according to (1) above,
The plurality of first electrode lines and the plurality of second electrode lines are spaced apart from each other in the thickness direction of the electrode substrate,
The plurality of capacitance sensors are respectively formed in intersection regions of the plurality of first electrode lines and the plurality of second electrode lines.
(3) The sensor device according to (2) above,
The electrode substrate is
A first insulating layer that supports the plurality of first electrode wires;
A second insulating layer that supports the plurality of second electrode wires,
The shield layer is provided on the first insulating layer.
(4) The sensor device according to (3) above,
The shield layer is provided on the same plane as the plurality of first electrode lines.
(5) The sensor device according to any one of (2) to (4) above,
The conductor film is made of the same material as the plurality of first electrode wires.
(6) The sensor device according to any one of (2) to (5) above,
The conductor film includes a plurality of third electrode lines arranged between each of the plurality of first electrode lines.
(7) The sensor device according to (6) above,
The conductor film further includes a wiring portion that connects the plurality of third electrode lines to each other.
(8) The sensor device according to (1) above,
The plurality of capacitance sensors are respectively formed in regions facing the plurality of first electrode lines and the plurality of second electrode lines facing each other in an in-plane direction of the electrode substrate,
The shield layer further includes an insulating film disposed between the conductor film and the wiring region.
(9) The sensor device according to (8) above,
The electrode substrate includes a plurality of jumper wiring portions provided at intersections of the plurality of first electrode lines and the plurality of second electrode lines.
(10) The sensor device according to (9) above,
The conductor film is provided on the same plane as the plurality of jumper wiring portions.
(11) The sensor device according to (9) above,
The shield layer covers the plurality of jumper wiring portions.
(12) The sensor device according to any one of (9) to (11) above,
The said conductor film is comprised with the same material as the said several jumper wiring part. Sensor apparatus.
(13) The sensor device according to any one of (1) to (12) above,
The shield layer further shields at least a part of a wiring region of the plurality of first electrode lines communicating between the plurality of opposed regions.
(14) The sensor device according to any one of (1) to (13) above,
The plurality of second electrode lines have an outer peripheral wiring portion formed outside a detection region where the plurality of capacitance sensors arranged in a matrix are formed,
The shield layer further shields at least a part of the outer peripheral wiring portion.
(15) The sensor device according to any one of (1) to (14) above,
A deformable first conductor layer disposed to face one main surface of the electrode substrate;
A sensor device, further comprising: a first support having a plurality of first structures that connect between the first conductor layer and the electrode substrate.
(16) The sensor device according to (15) above,
A second conductor layer disposed to face the other main surface of the electrode substrate;
A sensor device further comprising: a second support body having a plurality of second structures connecting between the second conductor layer and the electrode substrate.

DESCRIPTION OF SYMBOLS 1 ... Sensor apparatus 11 ...

Flexible display

20, 20C ... Electrode board | substrate 20s, 20Cs ... Detection part 30 ... 1st support body 40 ... 2nd support body 50 ... Conductive layer 60 ... Control part 100 ...

Input device

210, 210C ...

First electrode line

220, 220C ... Second electrode line 220q ... Jumper wiring part 310 ... First structure 410 ... Second structure S1, S2 ... Shield layer S21, S22 ... Conductor film

Claims

A plurality of first electrode lines and a plurality of second electrode lines, each of which is formed in a plurality of opposing regions of the plurality of first electrode lines and the plurality of second electrode lines. An electrode substrate in which a plurality of capacitance sensors are arranged in a matrix,
A sensor device comprising: a shield layer that is provided on the electrode substrate and includes a conductor film that shields at least a part of a wiring region of the plurality of second electrode lines communicating between the plurality of opposing regions.
The sensor device according to claim 1,
The plurality of first electrode lines and the plurality of second electrode lines are spaced apart from each other in the thickness direction of the electrode substrate,
The plurality of capacitance sensors are respectively formed in intersection regions of the plurality of first electrode lines and the plurality of second electrode lines.
The sensor device according to claim 2,
The electrode substrate is
A first insulating layer that supports the plurality of first electrode wires;
A second insulating layer that supports the plurality of second electrode wires,
The shield layer is provided on the first insulating layer.
The sensor device according to claim 3,
The shield layer is provided on the same plane as the plurality of first electrode lines.
The sensor device according to claim 2,
The conductor film is made of the same material as the plurality of first electrode wires.
The sensor device according to claim 2,
The conductor film includes a plurality of third electrode lines arranged between each of the plurality of first electrode lines.
The sensor device according to claim 6,
The conductor film further includes a wiring portion that connects the plurality of third electrode lines to each other.
The sensor device according to claim 1,
The plurality of capacitance sensors are respectively formed in regions facing the plurality of first electrode lines and the plurality of second electrode lines facing each other in an in-plane direction of the electrode substrate,
The shield layer further includes an insulating film disposed between the conductor film and the wiring region.
The sensor device according to claim 8,
The electrode substrate includes a plurality of jumper wiring portions provided at intersections of the plurality of first electrode lines and the plurality of second electrode lines.
The sensor device according to claim 9,
The conductor film is provided on the same plane as the plurality of jumper wiring portions.
The sensor device according to claim 9,
The shield layer covers the plurality of jumper wiring portions.
The sensor device according to claim 9,
The said conductor film is comprised with the same material as the said several jumper wiring part. Sensor apparatus.
The sensor device according to claim 1,
The shield layer further shields at least a part of a wiring region of the plurality of first electrode lines communicating between the plurality of opposed regions.
The sensor device according to claim 1,
The plurality of second electrode lines have an outer peripheral wiring portion formed outside a detection region where the plurality of capacitance sensors arranged in a matrix are formed,
The shield layer further shields at least a part of the outer peripheral wiring portion.
The sensor device according to claim 1,
A deformable first conductor layer disposed to face one main surface of the electrode substrate;
A sensor device, further comprising: a first support having a plurality of first structures that connect between the first conductor layer and the electrode substrate.
The sensor device according to claim 15, wherein
A second conductor layer disposed to face the other main surface of the electrode substrate;
A sensor device further comprising: a second support body having a plurality of second structures connecting between the second conductor layer and the electrode substrate.
An operation member having an input operation surface;
A plurality of first electrode lines and a plurality of second electrode lines, each of which is formed in a plurality of opposing regions of the plurality of first electrode lines and the plurality of second electrode lines. An electrode substrate in which a plurality of capacitance sensors are arranged in a matrix,
A shield layer provided between the operation member and the electrode substrate and including a conductor film that shields at least a part of the wiring region of the plurality of second electrode lines communicating between the plurality of opposing regions. Input device.
A display element having an input operation surface;
A plurality of first electrode lines and a plurality of second electrode lines, each of which is formed in a plurality of opposing regions of the plurality of first electrode lines and the plurality of second electrode lines. An electrode substrate in which a plurality of capacitance sensors are arranged in a matrix,
A shield layer that is provided between the display element and the electrode substrate and includes a conductor film that shields at least a part of a wiring region of the plurality of second electrode lines communicating between the plurality of opposing regions. Electronic equipment.