WO2015032263A1 - 一种光学加工系统和方法 - Google Patents

一种光学加工系统和方法 Download PDF

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WO2015032263A1
WO2015032263A1 PCT/CN2014/084183 CN2014084183W WO2015032263A1 WO 2015032263 A1 WO2015032263 A1 WO 2015032263A1 CN 2014084183 W CN2014084183 W CN 2014084183W WO 2015032263 A1 WO2015032263 A1 WO 2015032263A1
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optical
light
spatial light
light modulator
processing system
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PCT/CN2014/084183
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English (en)
French (fr)
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胡进
浦东林
陈林森
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苏州大学张家港工业技术研究院
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Publication of WO2015032263A1 publication Critical patent/WO2015032263A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices

Definitions

  • the present application claims priority to Chinese Patent Application No. 2013-1039525, filed on Sep. 3, 2013, the entire disclosure of which is incorporated herein by reference. .
  • TECHNICAL FIELD The present invention relates to the field of lithography, and more particularly to an optical processing system and method incorporating interference lithography and laser direct writing.
  • Lithography is a supporting technology for micro-nano manufacturing, and its application fields cover a wide range of industries such as microelectronics, micro-nano optics, flat panel display and biomedicine.
  • lithography is regarded as an indispensable technical tool in the research of new materials and new devices, and there are urgent requirements for further improvement of lithography, including lithography resolution, lithography quality and The efficiency of lithography processing.
  • the basic principle of lithography is: Using a miniature imaging optical path, the image on the mask or spatial light modulator is miniaturized and projected onto the working surface to achieve a field of view exposure. Large-format lithography processing can be realized by splicing the exposure fields through two-dimensional movement of the workpiece table.
  • a projection lithography system using a mask is called a mask exposure machine.
  • Projection lithography systems using spatial light modulators known as laser direct write systems or maskless lithography systems. It is more flexible and convenient than a mask exposure machine. Especially in large-area precision graphic production, it has obvious advantages in terms of processing efficiency, dimensional accuracy and pattern uniformity.
  • a spatial light modulator also known as a pattern generator, is used to display a pixelated two-dimensional image with a typical display area of 1024 x 768 pixels and a single pixel size of 1 (H ⁇ m).
  • the minimum lithographic resolution ⁇ is limited by the numerical aperture of the optical system (lens).
  • the minimum lithography resolution resolution can be expressed as:
  • ⁇ is the refractive index of the optical material
  • sin e is the lens aperture angle
  • (n*sin e) is called the numerical aperture of the lens (denoted as NA)
  • NA the numerical aperture of the lens
  • the main problem with shortening the wavelength of the laser is that short-wavelength lasers are costly and have poor stability and beam quality.
  • optical lenses for short wavelengths are expensive and difficult to process, and the accuracy of the surface is required to be shortened with increasing wavelength.
  • the numerical aperture of the lens is mainly divided into two parts. One is to increase the refractive index n. This has been achieved by liquid immersion lithography and cannot be further improved. The second is to increase the aperture angle sin 6, which is difficult in the design and manufacture of the lens. If the field of view of the lens is large, the difficulty is further increased. Commercially available large aperture angle lenses tend to have a small field of view, that is, in order to achieve high optical resolution, concessions must be made on the field of view size.
  • These two optics have a small field of view but a large aperture angle, thereby achieving high optical resolution.
  • the lithography resolution is limited.
  • the normal projection imaging lens has a numerical aperture of up to 0.75 or more, and the introduced microlens and zone plate have a numerical aperture of about 0.95 (diffractive optics for maskless lithography and imaging (P71)), and the resolution is improved by less than 30%;
  • High numerical aperture array type microlens and zone plate are difficult to manufacture;
  • Microlens and zone plate and projection imaging system have high alignment adjustment accuracy, not only in the horizontal plane. The precise alignment of the XY array also requires the alignment of the focal planes in the height direction, which is difficult to achieve.
  • the present invention provides an optical processing system and method that combines an imaging optical path and an interference optical path. Based on the effect of zero-order interference lithography, the lithography resolution is improved. At the same time, the alignment of the optical path is easy to adjust. In order to facilitate the understanding of the creative principle of the present invention, the performance of interference lithography is first analyzed:
  • the interference optical system can obtain resolution multiplication, and its minimum line width is ⁇ / (4 ⁇ ⁇ ⁇ ⁇ ), which is half of the ordinary optical system.
  • the complex amplitude distribution of the exposed light field of the beam 1 and the beam 2 at a certain angle is a classical cosine function, and the complex amplitude expression is as follows , where d is the period of the complex amplitude distribution.
  • the intensity distribution is the square of the complex amplitude distribution, which can be recorded as
  • Curve 3 is the complex amplitude curve of the double beam interference
  • curve 4 is the light intensity curve.
  • the interference optical system can achieve resolution multiplication
  • the conventional interference lithography can only obtain the exposure pattern of the periodic structure, and the resolution of the conventional laser direct writing is limited by the numerical aperture of the optical system. It is therefore an object of the present invention to provide a lithographic solution that combines the advantages of both.
  • An optical processing system comprising an optical system, a stage, a driving system for driving the optical system and the relative movement of the stage, and controlling the optical system and the driving system a control system, the optical system comprising a spatial light modulator as the optical system pattern generating device, the spatial light modulator having a plurality of pixel units, each pixel unit being a mirror, wherein the spatial light modulator is performing graphics At the time of generation, the mirrors of the pixel units participating in the construction of the graphics uniformly flip the same angle Y such that the spatial light modulator forms a grating structure with Y as a blaze angle, and the grating structure diffracts the incident light to make the optical system At least two coherent lights capable of forming interference are obtained, and the optical system performs interference direct writing composite lithography using the coherent light described above.
  • the spatial symmetry condition is met between the blaze angle ⁇ of the spatial light modulator and the incident angle ⁇ of the incident light, and the coherent light is a class 1 light emitted by the spatial light modulator.
  • the effective slit width is smaller than the period of the grating structure, wherein the effective slit width is the product of the length of the single mirror and cos ⁇ .
  • a portion located outside the effective slit width of the mirror forms a light blocking region of incident light.
  • the ratio of the effective slit width to the period of the grating structure is 0.6-0.95.
  • the ratio of the effective slit width to the period of the grating structure is ⁇ / (3 > / ⁇ ).
  • the mirror flips a different angle from ⁇ , so that the light reflected by the mirror of the pixel unit deviates from the Outside the main light path of the optical system.
  • the grating structure is a one-dimensional grating or a two-dimensional grating.
  • the optical system comprises a light source, a spatial light modulator, a projection optics group and an aperture
  • the spatial light modulator reflects and splits the parallel light emitted by the light source
  • the projection optics group emits the spatial light modulator
  • the coherent light is projected onto the surface of the stage and forms an interference pattern that is disposed in the projection optics for shielding light other than the coherent light from the spatial light modulator.
  • the projection optics group includes at least two groups of lens groups, the lens groups constitute an imaging optical path, the spatial light modulator is disposed on an object surface of the imaging optical path, and a surface of the stage is disposed in the imaging The image side of the light path.
  • the optical processing system further includes a photodetector, and the photodetector is in operation The state is set above the aperture.
  • the invention also proposes an optical processing method, comprising:
  • the incident light is coarsely adjusted, and the light emitted from the light source is incident on the spatial light modulator to satisfy the spectral symmetry condition of the spatial light modulator, and two beams of ⁇ 1 light are generated;
  • the photodetector specifically, the photodetector is placed above the diaphragm, so that two rays of light are incident on the photodetector, and the incident angle is adjusted by the spectral comparison of the two beams until the power of the two beams The values are consistent;
  • the desired optical micro-expansion is selected, an exposure pattern is formed on the surface of the object, and the entire pattern is processed by a pattern-joining process.
  • the processing method of the graphic stitching is one of a flight exposure method or a step exposure method.
  • the effect of zero-order interference lithography is improved, and the lithography resolution is improved.
  • the resolution is doubled under the same optical system parameters (wavelength and numerical aperture).
  • the intensity distribution of the exposed light field is a cosine-like peak distribution, and the lithographic resolution can be slightly improved in combination with an appropriate development process.
  • the pattern of the interfering light field can be pixelated and controlled, and can be any shape.
  • the profile of the exposed light field is determined by the shape of the incident beam, typically a simple circular or square shape, and only periodic patterns are obtained.
  • the spatial light modulator has a higher energy utilization rate for incident light than the conventional laser direct writing system, and the improvement is over 10%.
  • the ordinary laser direct writing system optical path only uses the 0-level light of the spatial light modulator, and the method proposed in this patent utilizes the spatial light modulator to achieve the first-order light, which is known by calculation, and the method proposed by the patent has higher energy utilization rate. .
  • Figure 1 is a schematic diagram of a typical two-beam interference light field
  • Figure 2 is a typical complex amplitude and light intensity distribution of two-beam interference
  • Figure 3 is a schematic view showing the structure of an optical system in the optical processing system of the present invention.
  • Figure 4 is a schematic view showing the working state of the spatial light modulator
  • FIG. 5 is a schematic diagram of interference and direct write composite superposition of light emitted by a spatial light modulator
  • FIG. 6 is a schematic diagram of respective levels of complex amplitude distribution corresponding to spectral symmetry
  • Figure 7 is a comparison diagram of light field distribution of the interference pattern obtained by the present invention and the prior art
  • Figure 8 is an electron microscope physical diagram of a single exposure pattern formed by the optical processing method of the present invention.
  • 9A is a boundary pixel diagram of an exposure pattern obtained by the optical processing method of the present invention.
  • 9B is a boundary pixel diagram of an exposure pattern obtained by a conventional optical processing method
  • Figure 9C is an actual exposure pattern obtained by the optical processing method of the present invention.
  • DETAILED DESCRIPTION OF THE INVENTION As described in the background art, in the existing photolithography process, the resolution of the laser direct writing technique is limited by the wavelength of the light wave and the numerical aperture, and it has been difficult to have room for improvement. Interferometric lithography, although it can double the resolution of laser direct writing technology, but because the etched image can only be interference patterns, such as vertical stripes or periodic lattices, it is difficult to expose. Use a higher degree of freedom on the graph.
  • the machining system includes an optical system, a stage, a drive system that drives the optical system and the stage to move relative to each other, and a control system that controls the optical system and the drive system.
  • the pixel units of the spatial light modulator form a reflective diffraction grating having a uniform oblique angle, so that the spatial light modulator not only has image generation
  • the role of the spectroscopic device also acts as a spectroscopic device, so that the grating parameters of the spatial light modulator can be set, and the beam used to satisfy the interference can be found to form a special shape of the exposure pattern.
  • FIG. 3 is a schematic structural view of an optical system in the optical processing system of the present invention.
  • the optical system includes a light source (not shown), a spatial light modulator 12, projection optics groups 13, 14 and an aperture 22.
  • the light source uses a laser light source with better coherence, and the light emitted by the light source is incident on the surface of the spatial light modulator 12 by collimated light after being collimated, expanded, and the like.
  • the spatial light modulator 12 reflects and splits the parallel light from the light source.
  • the projection optics group includes at least two sets of lens groups 13, 14. The lens groups constitute an imaging optical path, the spatial light modulator 12 is disposed on the object surface of the imaging optical path, and the surface of the stage 15 is disposed on the image surface of the imaging optical path. on.
  • the projection optics group 13, 14 projects at least two coherent lights from the spatial light modulator onto the surface of the stage and forms an interference pattern, and the aperture 22 is disposed in the projection optics group 13, 14 for spatial light modulator 12 emits light shielding other than coherent light.
  • FIG. 4 is a schematic diagram of the working state of the spatial light modulator.
  • the spatial light modulator 12 serves as a pattern generating device of the optical system, and has a plurality of pixel units.
  • the array of the pixel units may be 1028*720, 1024*768 or 800*600. Pixel resolution for multiple combinations of specifications.
  • the specific structure of each pixel unit is a mirror 121. Under the driving of the internal control chip of the spatial light modulator, the mirrors 121 can be flipped, and each pixel unit has two on and off according to different flip angles. The working state, and the adjustment of the brightness according to the inversion rate, thereby achieving pixelated imaging.
  • the spatial light modulator 12 when performing the graphics generation, divides all the pixel units into pixel units participating in the construction of the graphics and pixel units not participating in the construction of the graphics, wherein the mirrors of the pixel units participating in the construction of the graphics are unified. Flip the same angle Y, as shown in Fig. 4, so that the spatial light modulator 12 constitutes a ⁇
  • the grating structure diffracts the incident light according to the diffraction and interference of the grating, so that the optical system obtains at least two coherent lights capable of forming interference, such as two symmetrical ⁇ 1 order diffracted lights.
  • the optical system then uses the coherent light described above to form an interference image after passing through the lower projection optics. And those pixel units that do not participate in the construction of the image, the mirrors flip an angle different from ⁇ , so that the light reflected by the mirrors of the pixel units deviates from the main optical path of the optical system, for example, the mirrors are flipped one by one. (- Y ) Angle, at which point the mirrors on these pixel units reflect the incident light at a large angle and exit the optical system directly. Therefore, the above-described interference image has a contour feature of the image in addition to the interfering features of light and dark, so that the optical system of the present invention forms an interference direct writing composite.
  • the grating structure may be a one-dimensional grating or a two-dimensional grating.
  • the interference effect of the one-dimensional grating structure is a light-dark interlace, and the interference effect of the two-dimensional grating structure is a light-dark phase lattice.
  • the effective slit width a is smaller than the period d of the grating structure, wherein the effective slit width a is the product of the length of the single mirror and cos ⁇ .
  • the portion outside the effective slit width a of the mirror forms a light blocking region of the incident light, that is, the incident light is absorbed by the spatial light modulator in the partial region without being reflected.
  • the effective slit width portion formed by the mirror forms a certain width ratio as compared with the entire period, and the effect of the aspect ratio will be described by the principle explained below.
  • the optical processing system is further provided with a photodetector 21, which is mainly used to adjust the incident angle of the light to find the best two interference rays.
  • the photodetector 21 In the normal state, the photodetector 21 is disposed outside the main optical path, and the photodetector is moved above the pupil only when the operating state is adjusted, that is, when the incident light is adjusted.
  • the +1 order light and the -1 order light emitted from the spatial light modulator are inversely extended, and the incident light field or the like can be obtained.
  • the effect is understood as: +1 level light and -1 level light first form an 'interference fringe' on the surface of the spatial light modulator, and then the interference fringes match the pixel pattern of the spatial light modulator to selectively enter the subsequent optical path.
  • the 'interference bar Alignment it is important to align with the pixel pattern of the spatial light modulator.
  • the +1 order light and the -1 order light energy are the largest and exactly equal in the spectral plane of the optical system.
  • This state can be referred to as 'spectral symmetry condition'.
  • the optical system adjusts the incident angle of the illumination parallel light (or the working angle of the mirror unit on the spatial light modulator) to achieve a 'spectral symmetry condition of the spatial light modulator output, and the corresponding incident angle may be referred to as 'symmetry Conditional incident angle '.
  • the first step is coarse adjustment. According to the theoretically calculated 'symmetric condition incident angle, adjust the incident angle of the illumination parallel light (or the working angle of the mirror unit on the spatial light modulator) to the specified value.
  • the second step is fine tuning.
  • the photodetector 21 is translated to the middle of the optical path, and the incident angle is finely adjusted until the power values detected by the two detectors on the photodetector 21 are strictly equal, indicating that the +1 order light and the -1 level light energy are exactly equal.
  • the parallel light of a unit amplitude is illuminated, and the pupil angle is incident on the reflective spatial light modulator 12, and the complex amplitude distribution of the diffraction order obtained on the spectral surface is:
  • ⁇ is the wavelength of the light source
  • f is the focal length of the projection optics group 13
  • M is the number of slots of the grating
  • Y is the working angle of the spatial light modulator.
  • the first term of the complex amplitude distribution E is the single-slit diffraction factor, which determines the envelope of E, whose outline is the sine function type.
  • the second term of the complex amplitude distribution E is a multi-slit interference factor.
  • the spectral symmetry condition is preferably satisfied between the blaze angle ⁇ of the spatial light modulator and the incident angle ⁇ of the incident light such that the coherent light is the ⁇ 1 order light emitted by the spatial light modulator.
  • the ratio of the effective slit width to the period of the grating structure is 0.6-0.95, preferably ⁇ / ( 3 ⁇ ), so that the energy utilization of the ⁇ 1 grade light is maximized.
  • the optical processing system of the present invention has the following features as compared with the prior art:
  • the proposed optical processing system combines an imaging optical path and an interference optical path.
  • the pattern of the interference light field can be controlled by pixels, and can be any shape.
  • the profile of the exposed light field is determined by the shape of the incident beam, typically a simple circular or square shape, and only periodic patterns are obtained.
  • FIG. 8 is a single exposure pattern formed by the optical processing method of the present invention.
  • the exposure pattern is exemplified by a sheep, and it can be seen that the outline of the sheep is clear after the composite direct exposure composite exposure. Visible, with extremely high resolution. Therefore, the optical processing system and method of the present invention provides a new idea for the field of lithography, which not only has a high theoretical research value, but also has a very high commercial value.
  • the spatial light modulator has a higher energy utilization rate for incident light than the conventional laser direct writing system, and is improved by more than 10%.
  • the ordinary laser direct writing system optical path only uses the 0-level light of the spatial light modulator, and the method proposed in this patent utilizes the spatial light modulator to achieve the first-order light, which is known by calculation, and the method proposed by the patent has higher energy utilization rate. .
  • a DPSS pulsed solid-state laser is used as a light source with a wavelength of 355 nm and a laser power of 500 mW. After the laser beam is filtered and expanded, it is projected onto the DMD surface.
  • DMD DMD from TI in the United States as a spatial light modulator
  • the incident angle of the spectrally symmetric condition is approximately 23.7 degrees.
  • the magnification factor is optional from 5 times to 100 times according to the lens magnification.
  • the photodetector uses a silicon photocell to adjust the sensitivity of the silicon photocell when adjusting the optical path. First, reduce the laser power, and when the exposure is working, restore the laser power to the rated power.
  • the incident light is coarsely adjusted, that is, the incident angle is 23.7 degrees, and the light source is incident.
  • the DMD it satisfies the spectral symmetry condition of the DMD, producing two beams of ⁇ 1 order light.
  • fine adjustment is performed by the photodetector, specifically, the photodetector is placed above the aperture 22, so that two rays of light are incident on the photodetector, and the incident angle is adjusted by the spectral comparison of the two beams until the two beams of light
  • the power values are the same. That is, the adjustment of the optical phase is completed.
  • the specific processing method can adopt the flight exposure mode, that is, the laser is used for short pulse exposure, and the driving device controls the continuous movement of the stage, so that a single pulse completes one exposure, and multiple exposures form a completed exposure pattern, which can be extremely high. Processing efficiency and positioning accuracy.
  • FIG. 9A is a schematic diagram of a boundary of an exposure pattern obtained by the optical processing method of the present invention.
  • the minimum resolution of the exposure point is 1/4 smaller than the original, one is filled.
  • the cell needs to be spliced four times, as shown in Fig. 9A, the resolution is significantly improved, and the cleaning contour is formed at the boundary of the pattern. While Fig.
  • FIG. 9B is an exposure in a conventional manner, the outline thereof is rough, and if a round spot is formed in this way, the boundary of the round spot has a sharp sawtooth shape.
  • a circular spot produced by the photolithographic technique of the present invention is shown in Fig. 9C, and the diameter of the circle is about 15 ⁇ , and it can be seen that the boundary portion has no obvious zigzag shape.

Abstract

一种光学加工系统和方法，该系统包括光学系统、载台、驱动系统，以及控制系统，该光学系统包括一空间光调制器（12）作为该光学系统图形发生装置，所述空间光调制器（12）具有若干像素单元，每个像素单元为反射镜（121），所述空间光调制器（12）在进行图形生成时，参与构建图形的像素单元的反射镜（121）统一翻转相同的角度γ，使得该空间光调制器（12）构成一个以Y为闪耀角的光栅结构，所述光栅结构对入射光进行衍射分光，使光学系统获得至少两束能够形成干涉的相干光，所述光学系统利用上述相干光完成干涉直写复合光刻，从而使普通的激光直写技术的分辨率大大提高。

Description

一种光学加工系统和方法
本申请要求于 2013 年 09 月 03 日提交中国专利局、 申请号为 201310395256.2、 发明名称为"一种光学加工系统和方法"的中国专利申请的优 先权， 其全部内容通过引用结合在本申请中。 技术领域 本发明涉及光刻技术领域，特别是一种结合干涉光刻技术和激光直写技术 的光学加工系统和方法。
背景技术
光刻技术是微纳制造的支撑性技术， 其应用领域广泛覆盖了微电子、微纳 光学、 平板显示及其生物医学等多个行业。 在新兴产业中， 新材料和新器件研 究过程中都将光刻技术视作不可或缺的技术手段，并且对光刻技术的进一步提 升有着迫切的要求， 包括光刻分辨率、 光刻质量和光刻加工的效率。
光刻技术的基本原理是： 釆用微缩成像光路，将掩膜板或者空间光调制器 上的图形进行微缩后， 投影到工作表面， 实现一个视场的曝光。 通过工件台的 二维移动， 将曝光视场拼接起来， 即可实现大幅面的光刻加工。
釆用掩膜板的投影光刻系统， 称为掩膜曝光机。釆用空间光调制器的投影 光刻系统， 称为激光直写系统或者无掩膜光刻系统。 相比掩膜曝光机， 更加灵 活和便捷。 尤其在大面积的精密图形制作上， 其加工效率、 尺寸精度和图形均 匀性等方面具有明显优势。 空间光调制器， 也被称为图形发生器， 用来显示像 素化的二维图形，典型的显示区域大小为 1024 x 768像素，单个像素的尺寸在 1(H敖米左右。
在上述光刻系统的各项性能指标中，光刻分辨率的提升无疑是最为重要和 最具价值的， 其次是图形质量和加工效率。
在特定的波长 λ下， 最小光刻分辨率 σ受限于光学系统（镜头）的数值孔 径。 最小光刻分辨率分辨率可表达为：
σ = λ /(2n*sin θ )，
其中 η为光学材料折射率， sin e为镜头孔径角， （n*sin e )被称作镜头的 数值孔径（记作 NA )， 其中 n是镜头材料相对介质的折射率， sin e是镜头的 孔径角。
减少波长和增加数值孔径，是提升光学分辨率的最直接最重要的途径。 因 此在各种光学系统， 已经尽可能釆用更短波长的光源和高数值孔径的镜头， 这 使得研发成本大幅增加， 同时也面临着设计和制造的巨大困难。
缩短激光的波长面临的主要问题是，短波长的激光器成本高， 而且稳定性 和光束质量差。 同时， 用于短波长的光学镜片， 材料昂贵而且难以加工， 形面 精度要求随着波长缩短， 难度增加。
提高镜头的数值孔径的主要分为两部分。 一是提高折射率 n。 这个已经通 过液体浸没式光刻实现， 无法进一步提高。 二是提高孔径角 sin 6， 其困难在 于镜头的设计和制造。 如果镜头的视场较大， 其难度进一步增加。 商用的大孔 径角的镜头往往视场很小， 也就是说， 为了获得高光学分辨率， 必须在视场尺 寸上做出让步。
根据这一指导思想， 参考文献 microlens scanner for microlithography and wid-field confocal microscopy― US6133986和参考文献 diffractive optics for maskless lithography and imaging ( P41 ), 分别将微透镜和波带片， 引入到投影 光刻系统中。 这两种光学器件的视场很小， 但孔径角大， 借此获得高光学分辨 率。
其主要不足有几点： 1、 光刻分辨率提升有限。 普通投影成像镜头的数值 孔径最高可达 0.75 以上， 引入的微透镜和波带片的数值孔径最大约 0.95 ( diffractive optics for maskless lithography and imaging ( P71 ) )， 其分辨率的提 升小于 30%; 2、 高数值孔径阵列式的微透镜和波带片的制作难度大； 3、 微透 镜和波带片与投影成像系统的对准调整精度要求很高， 不但要实现水平面内 X-Y阵列的精密对准， 还要实现高度方向焦面的对准， 实现难度大。
发明内容 基于上述分析， 本发明提出了一种光学加工系统和方法， 结合了成像光路 和干涉型光路。 基于消零级干涉光刻的效果， 提高了光刻分辨率。 同时， 光路 的对准调整容易。 为了便于理解本发明的创作原理， 首先对干涉光刻的性能进 行分析：
在光学系统的波长和数值孔径一定的情况下，干涉光学系统可获得分辨率 倍增， 其最小线宽为 λ /(4ηδίη θ )， 是普通光学系统的一半。
干涉光学系统的分辨率倍增， 主要基于双光束干涉光场， 其基本原理分析 请参见图 1 :
成一定夹角的光束 1和光束 2干涉曝光光场的复振幅分布为经典的余弦函 数， 复振幅表达式如下
Figure imgf000005_0001
， 其中 d为复振幅分布的周期。 光强分布为复振幅分布的平方， 可以记为，
I = E2 = cos2 (a) =— +— cos(2a)
2 2
光强分布的周期为 dl ， 比较复振幅 E和光强 I的表达式可知， dI = d/2， 说明分辨率获得了倍增。
双光束干涉的典型复振幅和光强分布如图 2所示。其中曲线 3为双光束干 涉的复振幅曲线， 曲线 4为光强曲线。
虽然干涉光学系统可获得分辨率倍增，但是传统干涉光刻只能获得周期结 构的曝光图形， 又传统激光直写的分辨率受到光学系统数值孔径的限制。 因此 本发明目的在于提出一种可以实现两者的优点结合的光刻技术方案。
根据上述目的提出的一种光学加工系统， 包括光学系统、 载台、 驱动该光 学系统和该载台做相对移动的驱动系统，以及控制该光学系统和该驱动系统的 控制系统， 该光学系统包括一空间光调制器作为该光学系统图形发生装置， 所 述空间光调制器具有若干像素单元， 每个像素单元为反射镜， 其中， 所述空间 光调制器在进行图形生成时，参与构建图形的像素单元的反射镜统一翻转相同 的角度 Y，使得该空间光调制器构成一个以 Y为闪耀角的光栅结构， 所述光栅 结构对入射光进行衍射分光， 使光学系统获得至少两束能够形成干涉的相干 光， 所述光学系统利用上述相干光完成干涉直写复合光刻。
优选的，所述空间光调制器的闪耀角 γ与入射光的入射角度 Θ之间满足频 谱对称条件， 所述相干光为该空间光调制器反射发出的士 1级光。
优选的， 所述参与构建图形的像素单元的反射镜经过翻转角度 γ之后， 其 有效缝宽小于光栅结构的周期， 其中所述有效缝宽为单块反射镜的长度与 cos γ的乘积。
优选的， 所述光栅结构中，位于反射镜有效缝宽之外的部分形成入射光的 阻光区。
优选的， 所述有效缝宽与光栅结构的周期之比为 0.6-0.95。
优选的， 所述有效缝宽与光栅结构的周期之比为 π/(3>/ϊ)。
优选的， 所述空间光调制器中， 除了参与构建图形的像素单元之外的像素 单元， 其反射镜翻转一个与 γ不同的角度，使得经过这些像素单元的反射镜反 射的光线， 偏离在该光学系统的主光路之外。
优选的， 所述光栅结构为一维光栅或二维光栅。
优选的， 所述光学系统包括光源、 空间光调制器、 投影光学镜组和光阑， 所述空间光调制器将光源发出的平行光进行反射分光，所述投影光学镜组将空 间光调制器发出的相干光投射到载台表面并形成干涉图样，所述光阑设置在投 影光学镜组中， 用以将空间光调制器发出的相干光之外的光线屏蔽。 优选的， 所述投影光学镜组包括至少两组透镜组， 该些透镜组组成成像光 路， 所述空间光调制器设置在该成像光路的物面上， 所述载台的表面设置在该 成像光路的像面上。
优选的， 所述光学加工系统进一步包括光电探测器， 所述光电探测器于工 作状态下设置于所述光阑的上方。
同时本发明还提出了一种光学加工方法， 包括：
提供如上所述的光学加工系统；
首先对入射光线进行粗调，将光源出射光线入射至空间光调制器上，使其 满足空间光调制器的频谱对称条件， 产生两束 ± 1级光；
然后通过光电探测器进行细调， 具体为将光电探测器放置在光阑上方，使 两束光线入射到光电探测器上， 通过两束光线的光谱比较， 调节入射角， 直至 两束光线的功率数值一致；
最后选择所需的光学微缩倍数，在物体表面形成曝光图形， 并通过图形拼 接的加工方式完成整幅图形的加工。 优选的，所述图形拼接的加工方法为飞行曝光方法或步进曝光方法中的一 种。 本发明的光学加工系统和方法， 结合成像光路和干涉光路， 与现有技术相 比， 本发明的技术方案具有如下的技术优势：
第一、 具有消零级干涉光刻的效果， 提高了光刻分辨率。 相比普通的激光 直写系统， 在相同的光学系统参数（波长和数值孔径） 下， 分辨率提高一倍。 同时， 具有干涉光刻的长焦深的优点。 另外， 曝光光场的光强分布为余弦状尖 峰分布， 结合适当的显影工艺， 光刻分辨率还可以略微提高。
第二、具有空间光调制器投影成像的效果， 干涉光场的图案得以像素化控 制， 可以是任意形状。 而传统的干涉光刻， 曝光光场的轮廓由入射光束的形状 决定， 一般为简单的圓形或者方形， 并且只能获得周期性的图形。
第三、 提出的光刻系统和方法， 相比传统的激光直写系统， 空间光调制器 对入射光的能量利用率更高，提升超过 10%。普通的激光直写系统光路只利用 空间光调制器的 0级光， 而本专利提出的方法利用空间光调制器的士 1级光， 通过计算可知， 而本专利提出的方法能量利用率更高。
附图说明 为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施 例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地， 下面描述 中的附图仅仅是本发明的一些实施例， 对于本领域普通技术人员来讲，在不付 出创造性劳动的前提下， 还可以根据这些附图获得其他的附图。
图 1是典型的双光束干涉光场示意图；
图 2是双光束干涉的典型复振幅和光强分布图；
图 3是本发明的光学加工系统中光学系统的结构示意图；
图 4是该空间光调制器的工作状态示意图；
图 5是空间光调制器发出的光进行干涉与直写复合叠加的原理图； 图 6是频谱对称条件下对应的各个级次复振幅分布示意图；
图 7本发明和现有技术获得的干涉图形的光场分布比较图；
图 8 是釆用本发明的光学加工方法形成的单次曝光图形的电子显微镜实 物图；
图 9 A为本发明的光学加工方法获得的曝光图形边界像素图；
图 9B为现有的光学加工方法获得的曝光图形边界像素图；
图 9C为本发明的光学加工方法获得的实际曝光图形。 具体实施方式 正如背景技术中所述，现有的光刻工艺中， 激光直写技术的分辨率受到光 波波长和数值孔径的限制， 已经很难有提升的空间。 而干涉光刻技术， 虽然可 以在分辨率上比激光直写技术提高一倍， 但是由于刻蚀的图像只能是干涉图 形， 比如明暗相间的竖直条纹或周期性点阵，很难在曝光图形上作出自由度较 高的使用。 因此本发明的目的在于提出一种光学加工系统和方法，该光学加工系统结 合了激光直写技术和干涉光刻技术中的优点， 即能将曝光图形进行像素化设 计， 从而曝光出出任意图形， 又能利用干涉光刻提高曝光图形的分辨率。 该光 学加工系统包括光学系统、载台、驱动该光学系统和该载台做相对移动的驱动 系统，以及控制该光学系统和该驱动系统的控制系统。与现有技术的差别在于， 其中光学系统中，通过设置一块空间光调制器，使得空间光调制器的像素单元 形成具有统一斜角的反射式衍射光栅，从而使空间光调制器不仅具有图像生成 的作用， 同时也担当了分光器件的作用， 这样一来可以设定空间光调制器的光 栅参数， 找到满足干涉所用的光束， 形成特殊形状的曝光图形。 下面， 将对本发明的技术方案做详细描述。
请参见图 3， 图 3是本发明的光学加工系统中光学系统的结构示意图。 如 图所示， 该光学系统包括光源 （图中未示出）、 空间光调制器 12、 投影光学镜 组 13、 14和光阑 22。
其中光源釆用相干性较好的激光光源， 该光源发出的光线经过准直、扩束 等手段后， 以平行光入射到空间光调制器 12的表面。 空间光调制器 12将光源 发出的平行光进行反射和分光。 投影光学镜组包括至少两组透镜组 13、 14， 该些透镜组组成成像光路， 空间光调制器 12设置在该成像光路的物面上， 载 台 15的表面设置在该成像光路的像面上。投影光学镜组 13、 14将空间光调制 器发出的至少两束相干光投射到载台表面并形成干涉图样， 光阑 22设置在投 影光学镜组 13、 14中，用以将空间光调制器 12发出的相干光之外的光线屏蔽。
请参见图 4， 图 4是该空间光调制器的工作状态示意图。 如图所示， 该空 间光调制器 12作为该光学系统的图形发生装置， 其具有若干像素单元， 举例 来说， 这些像素单元构成的阵列可以为 1028*720、 1024*768或 800*600等多 种组合规格的像素分辨率。 每个像素单元的具体结构为反射镜 121， 这些反射 镜 121在空间光调制器的内部控制芯片的驱动下， 可以进行翻转，根据翻转角 度的不同，使得每个像素单元具有开启和关闭的两种工作状态， 并依据翻转速 率实现光亮度的调节， 从而实现像素化的成像。 在本发明中， 该空间光调制器 12 在进行图形生成时， 将所有的像素单元划分为参与构建图形的像素单元和 不参与构建图形的像素单元，其中参与构建图形的像素单元的反射镜统一翻转 相同的角度 Y， 如图 4所示， 这样一来， 该空间光调制器 12就构成一个以 γ 为闪耀角的光栅结构，依据光栅的衍射和干涉作用， 该光栅结构对入射光进行 衍射分光，使光学系统获得至少两束能够形成干涉的相干光， 比如两束对称的 ± 1级衍射光。 然后该光学系统利用上述相干光， 经过下面的投影光学镜组之 后， 形成干涉图像。 而那些不参与构建图像的像素单元， 其反射镜翻转一个与 γ不同的角度，使得经过这些像素单元的反射镜反射的光线，偏离在该光学系 统的主光路之外， 比如这些反射镜翻转一个（- Y ) 角度， 此时这些像素单元 上的反射镜就会将入射光线反射一个较大的角度， 直接脱离光学系统。 因此上 述的干涉图像除了具有明暗相间的干涉特征外，还具有图像的轮廓特征，使得 本发明的光学系统形成干涉直写复合。 光栅结构可以为一维光栅或二维光栅， 一维光栅结构曝光所得图形的干涉效果为明暗相间的条纹，二维光栅结构曝光 所得图形的干涉效果为明暗相间的点阵。
进一步地，这些参与构建图形的像素单元的反射镜 121经过翻转角度 γ之 后， 其有效缝宽 a小于光栅结构的周期 d， 其中有效缝宽 a为单块反射镜的长 度与 cos γ的乘积。 同时在此光栅结构中， 位于反射镜有效缝宽 a之外的部分 形成入射光的阻光区， 即入射光线在该部分区域时被空间光调制器吸收， 不参 与反射。这样一来，反射镜构成的有效缝宽部分与整个周期相比形成了一定的 占宽比， 对于该占宽比的作用， 将通过下文的原理阐述部分进行描述。
进一步地， 该光学加工系统还设有一光电探测器 21， 这个光电探测器 21 主要用来调整光线入射角度， 从而找到最佳的两束干涉光线。 在一般状态下， 该光电探测器 21设置在主光路的外面， 只有在工作状态下， 即进行入射光的 调节时才将该光电探测器移到光阑上方。
下面将对上述的光学系统的物理原理做详细描述， 需要指出的是， 该原理 部分的阐述是为了更好的理解本发明的创作思想， 而非对本发明的一种限定。
请参见图 5， 当干涉的两束光线选自衍射光谱中的 ± 1级衍射光时， 将空 间光调制器出射的 +1级光和 -1级光反向延长， 可以将入射光场等效理解为： +1级光和 -1级光首先在空间光调制器表面形成了 '干涉条纹，， 然后干涉条纹 与空间光调制器的像素图形匹配， 有选择地进入后续光路。 显然， 该 '干涉条 纹，与空间光调制器的像素图形对齐十分重要。根据信息光学理论，在最佳 '对 齐， 的状态下， 光学系统的频谱面上， +1级光和 -1级光能量最大且精确相等。 该状态可称为 '频谱对称条件'。
所述光学系统，通过调整照明平行光的入射角度（或者空间光调制器上反 射镜单元的工作角度）， 以实现空间光调制器输出的 '频谱对称条件，， 对应入 射角度可称为 '对称条件入射角'。
具体的调整分为两步：
第一步粗调。 根据理论计算的 '对称条件入射角，， 调整照明平行光的入 射角度（或者空间光调制器上反射镜单元的工作角度）到指定数值。
第二步精调。 将光电探测器 21平移到光路的中间位置， 微调入射角度， 直至光电探测器 21上两颗探测器检测到的功率数值严格相等，说明 +1级光和 -1级光能量精确相等。
'频谱对称条件， 的理论分析计算如下：
根据信息光学理论， 以单位振幅的平行光照明， 以 Θ角入射到所述反射式 空间光调制器 12上， 在频谱面上获得的衍射级复振幅分布为：
1
， ―
Figure imgf000011_0001
其中 λ为光源的波长， f 为投影光学镜组 13的焦距， M为光栅的槽数， Y为空间光调制器的工作角度。
复振幅分布 E的第一项为单缝衍射因子， 它决定了 E的包络， 其轮廓为 sine函数类型。
复振幅分布 E的第二项为多缝干涉因子。 申请人在对该表达式进行数学分析时， 得出以下结论：
1、 在光源波长 λ和光栅参数（闪耀角 γ和槽宽 d )—定的情况下， 改变 入射角 Θ， 可以使得各衍射级次相对 sine包络的左右移动。 根据本结论， 特别地， 当入射角 Θ满足下式时： sin ( θ ) - sin ( θ - 2 γ )]d/ λ = N + 1/2 , N为整数。 可以使得某两个衍射级次位于 sine包络的主峰中，并呈对称分布。 由此可 以获得对 0级光的完全消除， 同时 ± 1级光集中了光场的绝大部分能量。 也即 获得了 '频谱对称条件'。 2、 改变透射阶梯面在整个光栅结构中的占空比 a/d， 可以实现各衍射级次 的间距相对 sine包络的零点间距的增大或减小。
根据本结论， 选取合适的占空比 a/d， 可以实现 ± 2级以上的高级次位于 sine包络的零点的附近，从而被充分抑制。通常，将该占空比 a/d选取在 0.6-0.95 之间时， 可以得到一个较高的衍射效率。 最优的， 当占空比 a = ;r/(3V^时， 可得士 1级的衍射效率的最大值 92.3%， 在图 6中给出了对应的各个级次复振 幅分布。 如图所示， 通过设置恰当的占空比 a/d和入射角， 该分光光栅的衍射 光谱中， 零级光被消除， 士 2级以上的光被抑制在 sine包络的零点间距附近从 而其所占的振幅能量最小， 而此时 ± 1级的衍射效率的最大， 接近理想的衍射 光栅输出效率。
因此在本发明中，空间光调制器的闪耀角 γ与入射光的入射角度 Θ之间优 选满足频谱对称条件， 这样使得相干光为该空间光调制器反射发出的 ± 1 级 光。
进一步地， 有效缝宽与光栅结构的周期之比为 0.6-0.95， 优选为 π/(3^)， 从而使得 ± 1级光的能量利用率最大。
根据上述分析，本发明的光学加工系统与现有技术相比，具有如下的特点：
1、 所提出的光学加工系统， 结合了成像光路和干涉光路。
2、 具有消零级干涉光刻的效果， 提高了光刻分辨率。 相比普通的激光直 写系统， 在相同的光学系统参数（波长和数值孔径）下， 分辨率提高一倍。 同 时， 具有干涉光刻的长焦深的优点。 另外， 曝光光场的光强分布为余弦分布， 结合适当的显影工艺， 光刻分辨率还可以略微提高。 请参见图 7， 图 7中曲线 6是本发明获得的像素化的干涉光场分布， 曲线 5是普通激光直写的像素化的 投影光场分布。 可以看出本发明的干涉直写复合光刻相比普通的激光直写技 术， 具有更高的能量集中， 能够形成更加精细的曝光点。
3、具有空间光调制器投影成像的效果， 干涉光场的图案得以像素化控制， 可以是任意形状。而传统的干涉光刻，曝光光场的轮廓由入射光束的形状决定， 一般为简单的圓形或者方形， 并且只能获得周期性的图形。 请参见图 8， 图 8 是釆用本发明的光学加工方法形成的单次曝光图形， 该曝光图形以一头羊为 例， 可以看出本发明釆用干涉直写复合曝光之后， 羊的轮廓清晰可见， 具有极 高的分辨率。因而本发明的光学加工系统和方法为光刻技术领域提供了一种新 的思路， 不仅具有极高的理论研究价值， 同时具有极高的商用价值。
4、 所提出的光刻系统和方法， 相比传统的激光直写系统， 空间光调制器 对入射光的能量利用率更高，提升超过 10%。普通的激光直写系统光路只利用 空间光调制器的 0级光， 而本专利提出的方法利用空间光调制器的士 1级光， 通过计算可知， 而本专利提出的方法能量利用率更高。
下面再以一个具体实施方式对使用本发明的光学加工系统的加工方法做 说明。
对于光学加工系统的各部件， 选取为：
1、釆用 DPSS脉冲固体激光器作为光源，波长为 355nm，激光功率 500mw。 激光束经滤波和扩束准直后， 投射到 DMD表面。
2、 釆用美国 TI公司的 DMD 作为空间光调制器， 基本参数为： 周期 13.68um，工作角度 γ =12度， 占空比约 0.95。频谱对称条件的入射角约为 23.7 度。
3、 釆用微缩投影光路， 微缩倍数根据镜头倍率从 5倍到 100倍可选。 典 型的情况下， 釆用 20倍镜头， 其数值孔径 ΝΑ=0.45。
4、 光电探测器釆用硅光电池， 调节光路时， 为了匹配硅光电池的敏感度。 首先降低激光功率， 曝光工作时， 再将激光功率恢复成额定功率。
该光学加工方法操作时：
首先对入射光线进行粗调， 即釆用入射角 23.7度， 将光源出射光线入射 至 DMD上， 使其满足 DMD的频谱对称条件， 产生两束 ± 1级光。 然后通过光电探测器进行细调，具体为将光电探测器放置在光阑 22上方， 使两束光线入射到光电探测器上， 通过两束光线的光谱比较， 调节入射角， 直 至两束光线的功率数值一致。 即完成光学阶段的调整。
最后选择所需的光学微缩倍数，在物体表面形成曝光图形， 并通过图形拼 接的加工方式完成整幅图形的加工。 具体加工方式， 可以釆用飞行曝光方式， 即激光器做短脉冲曝光，驱动装置控制载台连续运动，使得单次脉冲即完成一 次曝光， 而多次曝光拼接形成完成的曝光图形， 可以获得极高的加工效率和定 位精度。 当然也可以釆用步进曝光的方式， 控制单次曝光的时间， 然后选择步 进步长和步进时间， 完成多次曝光图形的拼接。
因为上述光学加工系统和方法，相比普通的投影光刻系统， 分辨率提升一 倍， 但是像素间距不变。 因此， 实现一块区域的密排填充， 需要四次或四次以 上曝光的错移拼接。 请参见图 9A-9C， 其中图 9A为本发明的光学加工方法获 得的曝光图形的边界示意图， 在该曝光方法， 由于其曝光点的最小分辨率比原 来小了 1/4， 因此填充 1个单元格需要釆用四次拼接的方式， 如图 9A所示， 其分辨率明显提升， 在图形边界形成清洗的轮廓。 而图 9B是釆用传统的方式 进行曝光， 其轮廓粗糙， 如果按此方式形成圓斑， 则圓斑的边界具有明显的锯 齿形状。在实际使用中，利用本发明的光刻技术产生的一个园斑如图 9C所示， 该圓的直径大约在 15 μ πι左右， 可以看出其边界部分无明显的锯齿状。
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本 发明。 对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见 的， 本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下， 在 其它实施例中实现。 因此， 本发明将不会被限制于本文所示的实施例， 而是要 符合与本文所公开的原理和新颖特点相一致的最宽的范围。

Claims

权 利 要 求
1、 一种光学加工系统， 包括光学系统、 载台、 驱动该光学系统和该载台
#支相对移动的驱动系统， 以及控制该光学系统和该驱动系统的控制系统， 该光 学系统包括一空间光调制器作为该光学系统图形发生装置，所述空间光调制器 具有若干像素单元， 每个像素单元为反射镜， 其特征在于： 所述空间光调制器 在进行图形生成时， 参与构建图形的像素单元的反射镜统一翻转相同的角度 Y ,使得该空间光调制器构成一个以 γ为闪耀角的光栅结构， 所述光栅结构对 入射光进行衍射分光，使光学系统获得至少两束能够形成干涉的相干光， 所述 光学系统利用上述相干光完成干涉直写复合光刻。
2、 如权利要求 1所述的光学加工系统， 其特征在于： 所述空间光调制器 的闪耀角 γ与入射光的入射角度 Θ之间满足频谱对称条件，所述相干光为该空 间光调制器反射发出的 ± 1级光。
3、 如权利要求 1所述的光学加工系统， 其特征在于： 所述参与构建图形 的像素单元的反射镜经过翻转角度 γ之后， 其有效缝宽小于光栅结构的周期， 其中所述有效缝宽为单块反射镜的长度与 cos γ的乘积。
4、 如权利要求 3所述的光学加工系统， 其特征在于： 所述光栅结构中， 位于反射镜有效缝宽之外的部分形成入射光的阻光区。
5、 如权利要求 3所述的光学加工系统， 其特征在于： 所述有效缝宽与光 栅结构的周期之比为 0.6-0.95。
6、 如权利要求 3所述的光学加工系统， 其特征在于： 所述有效缝宽与光 栅结构的周期之比为 π/(3 ϊ)。
7、 如权利要求 1所述的光学加工系统， 其特征在于： 所述空间光调制器 中， 除了参与构建图形的像素单元之外的像素单元， 其反射镜翻转一个与 Υ不 同的角度，使得经过这些像素单元的反射镜反射的光线，偏离在该光学系统的 主光路之外。
8、 如权利要求 1所述的光学加工系统， 其特征在于： 所述光栅结构为一 维光栅或二维光栅。
9、 如权利要求 1所述的光学加工系统， 其特征在于： 所述光学系统包括 光源、 空间光调制器、投影光学镜组和光阑， 所述空间光调制器将光源发出的 平行光进行反射分光，所述投影光学镜组将空间光调制器发出的相干光投射到 载台表面并形成干涉图样， 所述光阑设置在投影光学镜组中， 用以将空间光调 制器发出的所述相干光之外的光线屏蔽。
10、 如权利要求 9所述的光学加工系统， 其特征在于： 所述投影光学镜组 包括至少两组透镜组， 该些透镜组组成成像光路， 所述空间光调制器设置在该 成像光路的物面上， 所述载台上放置一工件， 该工件的表面设置在该成像光路 的像面上。
11、 如权利要求 9所述的光学加工系统， 其特征在于： 所述光学加工系统 进一步包括光电探测器， 所述光电探测器于工作状态下设置于所述光阑的上 方。
12、 一种光学加工方法， 其特征在于：
提供如权利要求 1-11任意一项所述的光学加工系统；
首先对入射光线进行粗调，将光源出射光线入射至空间光调制器上，使其 满足空间光调制器的频谱对称条件， 产生两束 ± 1级光；
然后通过光电探测器进行细调， 具体为将光电探测器放置在光阑上方，使 两束光线入射到光电探测器上， 通过两束光线的光谱比较， 调节入射角， 直至 两束光线的功率数值一致；
最后选择所需的光学微缩倍数，在物体表面形成曝光图形， 并通过图形拼 接的加工方式完成整幅图形的加工。
13、 如权利要求 12所述的干涉光刻方法， 其特征在于： 所述图形拼接的 加工方法为飞行曝光方法或步进曝光方法中的一种。
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