WO2015030274A1 - Capteur d'image appliquant un photodétecteur organique et son procédé de fabrication - Google Patents

Capteur d'image appliquant un photodétecteur organique et son procédé de fabrication Download PDF

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Publication number
WO2015030274A1
WO2015030274A1 PCT/KR2013/007774 KR2013007774W WO2015030274A1 WO 2015030274 A1 WO2015030274 A1 WO 2015030274A1 KR 2013007774 W KR2013007774 W KR 2013007774W WO 2015030274 A1 WO2015030274 A1 WO 2015030274A1
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WO
WIPO (PCT)
Prior art keywords
electrode
photo sensor
organic photo
image sensor
semiconductor
Prior art date
Application number
PCT/KR2013/007774
Other languages
English (en)
Inventor
Ki Joong Kim
Ji Ho Hur
Moon Hyo Kang
Yong Ju Ham
Original Assignee
Silicon Display Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Display Technology filed Critical Silicon Display Technology
Priority to PCT/KR2013/007774 priority Critical patent/WO2015030274A1/fr
Publication of WO2015030274A1 publication Critical patent/WO2015030274A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer

Definitions

  • Embodiments of the present invention relate to an image sensor applying an organic photo sensor and a method of manufacturing the same, and, more particularly, to an image sensor applying an organic photo sensor and a method of manufacturing the same which can reduce a production cost.
  • An image sensor is a device which obtains an image using a property of a semiconductor which responds to light.
  • a pixel detects the different kinds of brightness and wavelengths to each other of light emitted from respective subjects and reads out them to an electrical signal value.
  • the function of image sensor is to render the electrical signal value (code value) in a level which can perform signal processing .
  • the image sensor in accordance with a conventional art is configured using a thin film transistor and a photo sensor.
  • the image sensor is configured using a thin film transistor formed by depositing a semiconductor, a gate electrode, an insulating film and a data electrode, to name a few, and the photo sensor formed by depositing a first electrode, an optical sensing region and a second electrode, to name a few.
  • the image sensor in accordance with the conventional art there is an issue of a high production cost caused by using the pricey inorganic photo sensor that involves a complex fabrication process. Accordingly, an image sensor which can realize the reduction of manufacturing cost by a low material cost and a simple fabrication process, and its manufacturing process are desired.
  • the present invention is to suggest a potential solution to the problem existing in the related art as stated above, and thus the production of an image sensor with a reduced cost and a simple fabrication process by using an organic photo sensor for the image sensor is desired to achieve through the present invention.
  • an image sensor to which an organic photo sensor is applied including: a thin film transistor formed on a substrate; a first electrode connected to a data electrode of the thin film transistor; an organic photo sensor part deposited on the first electrode; and a second electrode deposited on the organic photo sensor part.
  • the thin film transistor may include: a substrate; a semiconductor deposited on the substrate; a gate insulating film deposited on the semiconductor; a gate electrode formed on the gate insulating film; an interlayer insulating film formed on the gate electrode; a contact hole formed in the interlayer insulating film and the gate insulating film; and a data electrode connected to the semiconductor via the contact hole.
  • the semiconductor may be a low-temperature polycrystalline silicon semiconductor, an amorphous silicon semiconductor, or an oxide semiconductor.
  • the first electrode may be an anode electrode
  • the second electrode may be a cathode electrode
  • an anode buffer layer deposited on the first electrode may be further included
  • the organic photo sensor part may be deposited on the anode buffer layer.
  • the first electrode may be a cathode electrode
  • the second electrode may be an anode electrode
  • an anode buffer layer deposited on the organic photo sensor part may be further included, and the second electrode may be deposited on the anode buffer layer.
  • the anode buffer layer may include a tungsten oxide (WOx) or a nickel oxide (NiOx).
  • the organic photo sensor part may be formed of quantum dots.
  • the organic photo sensor part may include an n-type organic semiconductor or a p-type organic semiconductor.
  • the n-type organic semiconductor may include P3HT (Poly(3-hexylthiophene)).
  • the p-type organic semiconductor may include PCBM (Phenyl C61 Butyric Acid Methyl Ester).
  • the anode electrode may be composed of a transparent electrode or a non-transparent electrode.
  • the cathode electrode is configured to include any one of Ag, Mg, Ca, LiF, Al.
  • the organic photo sensor is used as the photo sensor of the image sensor, a production cost of the image sensor can be reduced, and the image sensor can be manufactured by a simplified fabrication process.
  • FIG. 1 is a view for explaining the configuration of an image sensor to which an organic photo sensor is applied in accordance with one embodiment of the present invention
  • FIG. 2 is an equivalent circuit view of the image sensor to which the organic photo sensor is applied in accordance with the one embodiment of the present invention
  • FIG. 3 is a view for explaining the configuration of an image sensor to which an organic photo sensor is applied in accordance with another embodiment of the present invention
  • FIG. 4 is an equivalent circuit view of the image sensor to which the organic photo sensor is applied in accordance with the another embodiment of the present invention.
  • FIG. 5 is a flow chart for explaining a method of manufacturing the image sensor to which the organic photo sensor is applied in accordance with the one embodiment of the present invention.
  • FIG. 6 is a flow chart for explaining a method of manufacturing the image sensor to which the organic photo sensor is applied in accordance with the another embodiment of the present invention.
  • FIG. 1 is a schematic view for explaining the configuration of an image sensor to which an organic photo sensor is applied in accordance with one embodiment of the present invention
  • FIG. 2 is an equivalent circuit view of the image sensor to which the organic photo sensor is applied in accordance with the one embodiment of the present invention
  • a semiconductor 105 is deposited on a substrate 100, a gate insulating film 110 is deposited on the semiconductor 105, a gate electrode 115 is formed on the gate insulating film 110, and an interlayer insulating film 120 is formed on the gate electrode 115.
  • a data electrode 125 is formed in the interlayer insulating film 120 and the gate insulating film 110 via a contact hole to be connected to the semiconductor 105.
  • the semiconductor 105 is a low-temperature polycrystalline silicon semiconductor, an amorphous silicon, or an oxide semiconductor.
  • a first protection film 130 is formed on the data electrode 125 and the interlayer insulating film 120 formed as above.
  • the element configured as above corresponds to a thin film transistor 210 in the equivalent circuit view illustrated in FIG. 2.
  • the contact hole is formed on the first protection film 130 of the thin film transistor 210 configured as above, and a first electrode 135 is formed on the first protection film 130 and the contact hole formed as above.
  • the first electrode 135 is an anode electrode
  • a planarization film 140 and an anode buffer layer 145 are formed on the first electrode 135, and an organic photo sensor part 150 is deposited on the top of of the anode buffer layer 145.
  • the anode electrode may be composed of a transparent electrode or a non-transparent electrode.
  • the anode buffer layer 145 may include a tungsten oxide (WOx) or a nickel oxide (NiOx), the organic photo sensor part 150 may be formed of quantum dots or may be configured to include an n-type organic semiconductor or a p-type organic semiconductor.
  • the n-type organic semiconductor may be configured to include P3HT (Poly(3-hexylthiophene)), and the p-type organic semiconductor may be configured to include PCBM (Phenyl C61 Butyric Acid Methyl Ester).
  • a second electrode 155 which is a cathode electrode, is deposited on the top of the organic photo sensor part 150, and subsquently a second protection film 160 is formed by depositing on the top of the second electrode 155.
  • the cathode electrode 155 can be configured the cathode electrode is configured to include any one of Ag, Mg, Ca, LiF, Al.
  • the element configured as above corresponds to a photo sensing element 220 in an equivalent circuit illustrated in FIG. 2.
  • FIG. 3 is a view for explaining the configuration of an image sensor in which an organic photo sensor is applied in accordance with another embodiment of the present invention
  • FIG. 4 is an equivalent circuit view of the image sensor to which the organic photo sensor is applied in accordance with the another embodiment of the present invention.
  • a semiconductor 305 is deposited on a substrate 300, a gate insulating film 310 is deposited on the semiconductor 305, a gate electrode 315 is formed on the gate insulating film 310, and an interlayer insulating film 320 is formed on the gate electrode 315.
  • a data electrode 325 is formed on the interlayer insulating film 320 and the gate insulating film 310 via a contact hole to be connected to the semiconductor 305.
  • the semiconductor 305 is a low-temperature polycrystalline silicon semiconductor, an amorphous silicon semiconductor or an oxide semiconductor.
  • a first protection film 330 is formed on the data electrode 325 and the interlayer insulating film 320.
  • the element configured as above corresponds to a thin film transistor 410 in an equivalent circuit illustrated in FIG. 4.
  • the contact hole is formed on the first protection film 330 of the thin film transistor 320 configured as above, and a first electrode 335 is formed on the contact hole and the first protection film 335.
  • the first electrode 335 is a cathode electrode
  • a planarization film 340 and an organic photo sensor part 350 are formed on the first electrode 335
  • an anode buffer layer 345 is deposited on the top of the organic photo sensor part 350.
  • the cathode electrode 335 may be configured to include any one of Ag, Mg, Ca, LiF, Al.
  • the organic photo sensor part 350 may be formed in a quantum dot structure, or may be configured to include an n-type organic semiconductor or a p-type organic semiconductor.
  • the n-type organic semiconductor may include P3HT
  • the p-type organic semiconductor may include PCBM.
  • the anode buffer layer 345 may be configured to include a tungsten oxide (WOx) or a nickel oxide (NiOx).
  • the anode electrode may be formed of a transparent electrode or a non-transparent electrode.
  • the element configured as above corresponds to a photo sensing element 420 in the equivalent circuit of FIG. 4.
  • FIG. 5 is a flow chart for explaining a method of manufacturing the image sensor to which the organic photo sensor is applied in accordance with the one embodiment of the present invention.
  • the semiconductor is deposited on the substrate (S510), and the gate insulating film is deposited on the deposited semiconductor (S520).
  • the gate electrode is formed on the gate insulating film (S530), and the interlayer insulating film is formed on the gate electrode (S540).
  • the semiconductor is a low-temperature polycrystalline silicon semiconductor, an amorphous silicon semiconductor or an oxide semiconductor.
  • the first protection film is formed on the date electrode and the interlayer insulating film formed as above, the contact hole is formed on the first protection film, and the first electrode is formed on the contact hole and the first protection film (S560). At this point, the first electrode is an anode electrode.
  • the polarization film and the anode buffer layer are formed on the anode electrode (S570), and the organic photo sensor part is deposited on the top of the anode buffer layer (S580).
  • the anode electrode may be composed of a transparent electrode, or a non-transparent electrode.
  • the anode buffer layer may be configured to include a tungsten oxide (WOx) or a nickel oxide (NiOx), the organic photo sensor part may be formed in a quantum dot structure, or may be configured to include the n-type semiconductor or the p-type organic semiconductor.
  • the n-type organic semiconductor may be configured to include the P3HT
  • the p-type organic semiconductor may be configured to include the PCBM.
  • the second electrode which is the cathode electrode
  • the second protection film is again deposited on the top of the second electrode (S600).
  • the cathode electrode may be configured to include any one of Ag, Mg, Ca, LiF, and Al.
  • FIG. 6 is a flow chart for explaining a method of manufacturing the image sensor to which the organic photo sensor is applied in accordance with the another embodiment of the present invention.
  • the semiconductor is deposited on the substrate (S610), and the gate insulating film is deposited on the semiconductor (S620).
  • the gate electrode is formed on the gate insulating film (S630), and the interlayer insulating film is formed on the gate electrode (S640).
  • the contact hole is formed in the interlayer insulating film and the gate insulating film, and the data electrode is formed in the contact hole so that the data electrode can be connected to the semiconductor (S650).
  • the semiconductor is a low-temperature polycrystalline silicon semiconductor, an amorphous silicon semiconductor or an oxide semiconductor.
  • the first protection film is formed on the data electrode and the interlayer insulating film, the contact hole is formed on the first protection film, and the first electrode is formed on the contact hole and the first protection film (S660). At this point, the first electrode is the cathode electrode.
  • the polarization film and the organic photo sensor part are deposited on the first electrode (S670), and the anode buffer layer is deposited on top of the organic photo sensor part (S680).
  • the cathode electrode 335 may beconfigured to include any one of Ag, Mg, Ca, LiF, Al.
  • the anode buffer layer may be configured to include a tungsten oxide (WOx) or a nickel oxide (NiOx)
  • the organic photo sensor part may be formed of quantum dots or may be configured to include the n-type organic semiconductor or the p-type organic semiconductor.
  • the n-type organic semiconductor may be configured to include the P3HT
  • the p-type organic semiconductor may be configured to include the PCBM.
  • the second electrode which is the anode electrode
  • the second protection film is deposited on the top of the second electrode (S700).
  • the anode electrode may be configured to include a transparent electrode or a non-transparent electrode.
  • the organic photo sensor rather than an inorganic photo sensor having a relatively high price is used as the photo sensor of the image sensor, the production cost of the image sensor can be reduced.

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  • Solid State Image Pick-Up Elements (AREA)

Abstract

La présente invention concerne un capteur d'image auquel un photodétecteur organique est appliqué et son procédé de fabrication. Conformément à un mode de réalisation de la présente invention, le capteur d'image comportant le photodétecteur organique peut comprendre un transistor en couches minces formé sur un substrat ; une première électrode connectée à une électrode de données du transistor en couches minces ; une partie de photodétecteur organique déposée sur la première électrode ; et une seconde électrode déposée sur la partie de photodétecteur organique.
PCT/KR2013/007774 2013-08-29 2013-08-29 Capteur d'image appliquant un photodétecteur organique et son procédé de fabrication WO2015030274A1 (fr)

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Application Number Priority Date Filing Date Title
PCT/KR2013/007774 WO2015030274A1 (fr) 2013-08-29 2013-08-29 Capteur d'image appliquant un photodétecteur organique et son procédé de fabrication

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Application Number Priority Date Filing Date Title
PCT/KR2013/007774 WO2015030274A1 (fr) 2013-08-29 2013-08-29 Capteur d'image appliquant un photodétecteur organique et son procédé de fabrication

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3182456A1 (fr) * 2015-12-18 2017-06-21 Dpix, Llc Procédé de sérigraphie dans la fabrication d'un dispositif capteur d'image

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6300612B1 (en) * 1998-02-02 2001-10-09 Uniax Corporation Image sensors made from organic semiconductors
JP2008209939A (ja) * 2000-01-11 2008-09-11 Semiconductor Energy Lab Co Ltd 表示装置
US20090152530A1 (en) * 2007-10-15 2009-06-18 Sung-Min Ahn Image sensor including photoelectric charge-trap structure
KR20110018755A (ko) * 2009-08-18 2011-02-24 삼성모바일디스플레이주식회사 터치 스크린 디스플레이 장치, 및 이의 제조 방법
JP2011192929A (ja) * 2010-03-16 2011-09-29 Ricoh Co Ltd 半導体位置検出器および光センサー

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6300612B1 (en) * 1998-02-02 2001-10-09 Uniax Corporation Image sensors made from organic semiconductors
JP2008209939A (ja) * 2000-01-11 2008-09-11 Semiconductor Energy Lab Co Ltd 表示装置
US20090152530A1 (en) * 2007-10-15 2009-06-18 Sung-Min Ahn Image sensor including photoelectric charge-trap structure
KR20110018755A (ko) * 2009-08-18 2011-02-24 삼성모바일디스플레이주식회사 터치 스크린 디스플레이 장치, 및 이의 제조 방법
JP2011192929A (ja) * 2010-03-16 2011-09-29 Ricoh Co Ltd 半導体位置検出器および光センサー

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3182456A1 (fr) * 2015-12-18 2017-06-21 Dpix, Llc Procédé de sérigraphie dans la fabrication d'un dispositif capteur d'image

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