WO2015027628A1 - Shift register unit, shift register and display device - Google Patents

Shift register unit, shift register and display device Download PDF

Info

Publication number
WO2015027628A1
WO2015027628A1 PCT/CN2013/089631 CN2013089631W WO2015027628A1 WO 2015027628 A1 WO2015027628 A1 WO 2015027628A1 CN 2013089631 W CN2013089631 W CN 2013089631W WO 2015027628 A1 WO2015027628 A1 WO 2015027628A1
Authority
WO
WIPO (PCT)
Prior art keywords
transistor
shift register
signal terminal
register unit
stage
Prior art date
Application number
PCT/CN2013/089631
Other languages
French (fr)
Chinese (zh)
Inventor
张晓洁
邵贤杰
李小和
李红敏
刘永
姜清华
Original Assignee
合肥京东方光电科技有限公司
京东方科技集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 合肥京东方光电科技有限公司, 京东方科技集团股份有限公司 filed Critical 合肥京东方光电科技有限公司
Publication of WO2015027628A1 publication Critical patent/WO2015027628A1/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611Control of matrices with row and column drivers
    • G09G3/3674Details of drivers for scan electrodes
    • G09G3/3681Details of drivers for scan electrodes suitable for passive matrices only
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00Command of the display device
    • G09G2310/02Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264Details of driving circuits
    • G09G2310/0286Details of a shift registers arranged for use in a driving circuit

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a shift register unit, a shift register, and a display device.
  • a TFT-LCD driver mainly includes a gate driver and a data driver, wherein the gate driver converts the input clock signal through a shift register and applies it to a gate line of the liquid crystal display panel.
  • the gate driving circuit has the same process as the formation of the TFT and is formed on the LCD panel simultaneously with the TFT.
  • the gate drive circuit includes a shift register having a plurality of stages, each stage being connected to a corresponding gate line to output a gate drive signal.
  • the stages of the gate driving circuit are connected to each other, the start signal is input to the first poles of the stages, and the gate driving signals are sequentially output to the gate lines, wherein the input ends of the front stage are connected to the output ends of the upper stage And the output of the next stage is connected to the control end of the previous stage.
  • a gate drive circuit of the above configuration is disposed on the right side of the LCD panel.
  • the shift register signal output may be erroneous and its lifetime may be degraded.
  • the present invention provides a shift register unit, a shift register and a display device.
  • the technical problem to be solved by the present invention is to solve the problem that the drift of the threshold voltage of the transistor itself in the gate driving circuit and the interference of adjacent transistors may cause the output of the shift register signal to be erroneous and the lifetime thereof to be lowered.
  • the present invention provides a shift register unit including a first transistor, a second transistor, a second transistor, a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor. And storage capacitors;
  • the gate of the first transistor and the first pole are connected to the input signal end, the second pole is connected to the pull-up node; the gate of the second transistor is connected to the reset signal end, and the first pole is connected to the pull-up node, First Two poles connected to the reference level line;
  • a gate of the third transistor is connected to the pull-up node, a first pole is connected to the first clock signal, and a second pole is connected to the output signal terminal;
  • a gate of the fifth transistor is connected to the pull-down node, a first pole is connected to the output signal terminal, and a second pole is connected to the reference level line;
  • a gate of the sixth transistor is connected to the pull-down node, a first pole is connected to the pull-up node, and a second pole is connected to the reference level line;
  • the gate of the seventh transistor and the first pole are connected to the second clock signal, and the second pole is connected to the pull-down node;
  • the gate of the eighth transistor is connected to the input signal terminal, the first pole is connected to the pull-down node, and the second pole is connected to the reference level line;
  • the first pole of the storage capacitor is connected to the pull-up node, and the second pole is connected to the output signal end. Further, further comprising a fourth transistor, a gate of the fourth transistor is connected to the pull-up node, a first pole is connected to the pull-down node, and a second pole is connected to the reference level line.
  • the first transistor, the second transistor, the second transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, and the eighth transistor are all N-type TFT transistors.
  • the first transistor, the second transistor, the second transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, and the eighth transistor are all P-type TFT transistors.
  • the reference level line is at a low level.
  • control method is as follows:
  • the first clock signal is low level
  • the second clock signal is high level
  • the input signal is high level to turn on the first transistor, and the storage capacitor is charged
  • the first clock signal is at a high level
  • the second clock signal is at a low level
  • the input signal terminal is at a low level
  • the reset signal terminal is at a low level
  • the first clock signal is turned on a second transistor, and the output signal is The terminal outputs a high level
  • the first clock signal is low level
  • the second clock signal is high level
  • the reset signal is high level to turn on the second transistor
  • the storage capacitor is discharged through the second transistor, so that the first transistor of the second transistor is lowered.
  • the second clock signal turns on the seventh transistor
  • the second transistor is at a second high level, so that the fifth transistor and the sixth transistor respectively output the signal terminal and the second transistor
  • the first pole discharge, the output signal terminal outputs a low level
  • the first clock signal is at a high level
  • the second clock signal is at a low level
  • the input signal terminal is at a low level
  • the reset signal terminal is at a low level
  • the first transistor and the third transistor are both turned off, and the output signal is output.
  • the terminal outputs a low level
  • the first day clock signal is low level
  • the second clock signal is high level
  • the input signal end is low level
  • the reset signal end is low level
  • the first transistor and the third transistor are both turned off.
  • the output signal output is low.
  • the present invention also provides a shift register comprising a plurality of cascaded shift register units; wherein the input signal terminals of any other stage shift register unit are connected to the upper stage except the first stage shift register unit Signal output
  • the reset signal terminal of any other stage shift register unit is connected to the signal output of the next stage.
  • the input signal terminal of the first stage shift register unit and the reset signal terminal of the last first stage shift register unit are both connected to the start signal terminal.
  • the present invention also provides a display device including the above shift register.
  • the above technical solution of the present invention has the following advantages:
  • the shift register unit of the present invention implements noise reduction processing with fewer transistors on the basis of the original signal transmission function, and not only effectively reduces the drift of the threshold voltage of the transistor itself.
  • the output of the adjacent transistor may cause an output error, and the narrow frame of the liquid crystal display is realized, the power consumption of the driving circuit is further reduced, and the output characteristics of the shift register and the service life of the transistor are further improved.
  • FIG. 1 is a schematic structural diagram of a shift register unit according to an embodiment of the present invention.
  • FIG. 2 is a logic timing diagram of a shift register unit in accordance with an embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of a shift register according to an embodiment of the present invention. detailed description
  • an embodiment of the present invention provides a shift register unit, where the shift register unit includes a first transistor M1, a second transistor M2, a third transistor M3, a fourth transistor M4, and a fifth transistor M5. a sixth transistor M6, a seventh transistor M7, an eighth transistor M8, and a storage capacitor CI; wherein
  • the first transistor M1 has a gate and a first pole connected to the input signal terminal G (N--1), and a second pole is connected to the pull-up node PU;
  • the gate of the second transistor M2 is connected to the reset signal terminal G (N l ), the first pole is connected to the pull-up node PU, and the second pole is connected to the reference level line VSS;
  • the gate of the third transistor M3 is connected to the pull-up node PU, the first pole is connected to the first clock signal CLK, and the second pole is connected to the output signal terminal G(N) ;
  • the gate of the fourth transistor M4 is connected to the pull-up node PU, the first pole is connected to the pull-down node PD, and the second pole is connected to the reference level line VSS;
  • the gate of the fifth transistor M5 is connected to the pull-down node PD, the first pole is connected to the output signal terminal G (N), and the second pole is connected to the reference level line VSS;
  • the gate of the sixth transistor M6 is connected to the pull-down node PD, the first pole is connected to the pull-up node PU, and the second pole is connected to the reference level line vss;
  • the gate of the seventh transistor M7 and the first pole are connected to the second clock signal CLKB, and the second pole is connected to the pull-down node PD;
  • the gate of the eighth transistor M8 is connected to the input signal terminal G (N+1 ), the first pole is connected to the pull-down node PD, and the second pole is connected to the reference level line VSS;
  • the first pole of the storage capacitor C1 is connected to the pull-up node PU, and the second pole is connected to the output signal terminal G (N).
  • the first clock signal CLK and the second clock signal CLKB are both connected to the IC driving circuit, and the output signal terminal G (N) is connected to the gate line.
  • the pull-up node PU has the same level as the second pole of the first transistor M1
  • the pull-down node PD has the same level as the second pole of the seventh transistor M7.
  • the first transistor M1, the second transistor M2, the second transistor M3, the fourth transistor M4, the fifth transistor M5, the sixth transistor M6, the seventh transistor M7, and the eighth transistor M8 are all N-type TFT transistors. It should be noted that the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, and the eighth transistor may all be P-type TFT transistors.
  • the above-mentioned shift register unit provided by the embodiment of the present invention adds a noise reduction design based on the prior art, and effectively suppresses an output error caused by the drift of the threshold voltage of the transistor itself and the interference of adjacent transistors, and The output characteristics of the shift register and the lifetime of the transistor are further improved.
  • the present invention also provides a shift register formed by cascading the shift register units described above, which includes cascaded stages of the above shift register unit.
  • the input signal end of the first stage shift register unit is connected to the start signal end, and the reset signal end of the first stage shift register unit is connected to the output signal end of the second pole shift register unit; the last stage shift register unit The input signal end is connected to the output signal end of the shift register unit of the previous stage, and the reset signal end of the last stage shift register unit is connected to the start signal end; except for the first stage and the last stage shift register unit, The input signal terminal of the stage shift register unit is connected to the output signal terminal of the shift register unit of the first stage, and the reset signal terminal is connected to the output signal terminal of the shift register unit of the next stage.
  • the shift register includes M stages, where M is the number of gate lines, where M is a positive integer, as shown in FIG. 3, the Shift Register represents the shift register units of the above stages, and the start signal end
  • the STV is input as an input signal to the input signal terminal of the first stage shift register unit, and - the gate drive signal is sequentially output to the gate line, and the input signal of the Nth stage shift register unit is determined by the Nth level
  • the output signal of the shift register unit is provided, and the reset signal is provided by an output signal of the N+1th stage shift register unit, wherein N ⁇ M, the reset signal of the Mth stage shift register unit is used by the first stage shift register unit
  • the input signal is the start signal, that is to say the start signal is used as the input signal of the first-pole shift register unit on the one hand and the reset signal of the M-stage shift register unit on the other hand.
  • the first stage T1 the clock signal CLK is at a low level, and the second clock signal CLKB is at a high level.
  • the front stage output signal G (Ni ) as an input signal is at a high level
  • the lower stage output signal G (N+I ) as a reset signal is at a low level
  • VSS is a low level signal.
  • the high-level input signal G (N--1 ) causes the first transistor M1 to be turned on and charges the storage capacitor C1 to raise the PU point to a high level, at which time the gate of the third transistor M3 is turned on, but due to At this time, the clock signal CLK is at a low level, the third transistor M3 is not turned on, and the output signal terminal G (N) outputs a low level;
  • the fourth transistor M4, the seventh transistor M7, and the eighth transistor M8 are both turned on.
  • the fifth transistor M5 and the sixth transistor M6 are both in an off state, and the PD point is at a low level, effectively preventing the fifth transistor M5 and the sixth transistor M6 from being leaked due to drift of the threshold voltage and interference of adjacent transistors.
  • the storage capacitor C1 is not fully charged.
  • the second stage T2 the clock signal CLK is high level, the second clock signal CLKB is low level, the input signal G (N 1 ) is low level, and the reset signal G (N-f l ) is low level.
  • the first transistor M1 is in an off state, the charging of the storage capacitor C1 is stopped, the third transistor M3 is turned on, and the output signal terminal G (N ) outputs a high level;
  • the third stage T3 The clock signal CLK is low, the second clock signal CLKB is high, the input signal G (N-1) is low, and the reset signal G (N+1) is high.
  • the second transistor M2 is turned on, and the storage capacitor C1 is discharged through the second transistor M2 to quickly lower the PU point to a low level, and the third transistor ⁇ 3 is turned off.
  • the second clock signal CLKB is at a high level
  • the input signal G (N-1) is at a low level
  • the seventh transistor M7 is turned on
  • the eighth transistor M8 is turned off
  • the PD point is at a high level
  • the fifth transistor M5 is turned off.
  • the sixth transistor M6 performs fast discharge on the output terminals G (N) and PLI points respectively to ensure that the output signal terminal G (N) outputs a low level to realize a reset function;
  • the fourth stage T4 the clock signal CLK is at a high level, the second clock signal CLKB is at a low level, the input signal G (N 1 ) is at a low level, and the reset signal G (N+1 ) is at a low level.
  • the first transistor M1 is turned off, the PU point is low, the third transistor M3 is turned off, and the output signal terminal G (N) is output low.
  • Flat the first transistor M1 is turned off, the PU point is low, the third transistor M3 is turned off, and the output signal terminal G (N) is output low.
  • the gate of the fourth transistor M4 is turned on, and the PD point is continuously discharged to keep it low, preventing the fifth transistor M5 and the sixth transistor M6 from being PD.
  • the noise of the point causes the storage capacitor C1 to leak and eventually causes the output signal terminal (; (N) output error.
  • the fifth stage T5 The clock signal CLK is low, the second clock signal CLKB is high level, the input signal G (N-I) is low level, and the reset signal G (N+I) is low level.
  • the first transistor M1 is turned off, the PU point is low, the third transistor M3 is turned off, and the output signal terminal G (N) is output low;
  • the seventh transistor M7 is turned on
  • the eighth transistor M8 is turned off
  • the PD point is at a high level
  • the fifth transistor M5 and the sixth transistor M6 are turned on.
  • the PU point and the output signal terminal G (N) perform noise-cancellation processing to prevent erroneous output due to drift of the threshold voltage of the transistor itself and interference of adjacent transistors.
  • the fourth transistor M4, the fifth transistor M5, and the sixth transistor M6 continuously align the PU point, the PD point, and the output with the periodic change of the first clock signal CLK and the second clock signal CLKB.
  • the signal terminal G (N) performs noise-cancellation processing to prevent erroneous output due to drift of the voltage of the transistor itself and interference of adjacent transistors, thereby ensuring output accuracy and stability.
  • the remaining transistors operate for a minimum of one line of signal scanning time.
  • the channel widths of the remaining transistors are much smaller than those of the first transistor and the second transistor, so that although the seventh transistor operates for a longer period of time in one line of signal scanning time,
  • the power consumption has not increased a lot, and the entire shift register achieves a significant reduction in power consumption.
  • the shift register unit of the present invention implements noise reduction processing with fewer transistors on the basis of the original signal transmission function, and not only effectively reduces the threshold voltage drift of the transistor itself and the thousand of adjacent transistors. Interference and other possible output errors, and the narrow frame of the liquid crystal display is realized, the power consumption of the driving circuit is further reduced, and the output characteristics of the shift register are further improved and the above is only a few preferred implementations of the present invention. It should be noted that those skilled in the art can make thousands if without departing from the technical principle of the present invention. Modifications and variations, these modifications and variations should also be considered as protection scope of the present invention.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Shift Register Type Memory (AREA)

Abstract

The present invention relates to the technical field of displays, and particularly relates to a shift register unit, a shift register and a display device. The shift register unit in the present invention comprises a first transistor, a second transistor, a third transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor and a storage capacitor. Noise reduction is achieved by the shift register unit in the present invention using fewer transistors on the basis of the original signal transfer function, so that not only the output errors probably caused by the drift of the threshold voltage of the transistors themselves, and by the interference of the adjacent transistors and the like are effectively suppressed, but also a narrow frame of a liquid crystal display is realized, the power consumption of a driving circuit is reduced as well, and the output characteristic of the shift register and the service life of the transistors are further improved.

Description

本发明涉及显示技术领域, 尤其涉及一种移位寄存器单元、 移位寄存器 和显示装置。  The present invention relates to the field of display technologies, and in particular, to a shift register unit, a shift register, and a display device.
目前, TFT-LCD驱动器主要包括栅极驱动器和数据驱动器, 其中, 栅极 驱动器将输入的时钟信号通过移位寄存器转换后加在液晶显示面板的栅极线 上。栅极驱动电路与 TFT的形成具有相同工艺并与 TFT—起同时形成在 LCD 面板上。 栅极驱动电路包括具有多级的移位寄存器, 每级均连接到相应的栅 极线以输出栅极驱动信号。 栅极驱动电路的各级彼此相连, 起始信号输入至 各级中的第一极并按顺序将栅极驱动信号输出至栅极线, 其中前级的输入端 连接到上一级的输出端, 并且下一级的输出端连接到前级的控制端。 Currently, a TFT-LCD driver mainly includes a gate driver and a data driver, wherein the gate driver converts the input clock signal through a shift register and applies it to a gate line of the liquid crystal display panel. The gate driving circuit has the same process as the formation of the TFT and is formed on the LCD panel simultaneously with the TFT. The gate drive circuit includes a shift register having a plurality of stages, each stage being connected to a corresponding gate line to output a gate drive signal. The stages of the gate driving circuit are connected to each other, the start signal is input to the first poles of the stages, and the gate driving signals are sequentially output to the gate lines, wherein the input ends of the front stage are connected to the output ends of the upper stage And the output of the next stage is connected to the control end of the previous stage.
在 LCD面板的右侧设置上述结构的栅极驱动电路。 然而, 由于栅极驱动 电路中晶体管自身阈值电压的漂移及相邻晶体管的干扰可能造成移位寄存器 信号输出错误及自身寿命下降。  A gate drive circuit of the above configuration is disposed on the right side of the LCD panel. However, due to the drift of the transistor's own threshold voltage and the interference of adjacent transistors in the gate drive circuit, the shift register signal output may be erroneous and its lifetime may be degraded.
因此, 针对以上不足, 本发明提供了一种移位寄存器单元、 移位寄存器 及显示装置。  Therefore, in view of the above deficiencies, the present invention provides a shift register unit, a shift register and a display device.
本发明要解决的技术问题是解决栅极驱动电路中晶体管自身阈值电压的 漂移及相邻晶体管的干扰可能造成移位寄存器信号输出错误及自身寿命下降 的问题。 The technical problem to be solved by the present invention is to solve the problem that the drift of the threshold voltage of the transistor itself in the gate driving circuit and the interference of adjacent transistors may cause the output of the shift register signal to be erroneous and the lifetime thereof to be lowered.
为了解决上述技术问题, 本发明提供了一种移位寄存器单元, 该移位寄 存器单元包括第一晶体管、 第二晶体管、 第≡晶体管、 第五晶体管、 第六晶 体管、 第七晶体管、 第八晶体管及存储电容; 其中,  In order to solve the above technical problem, the present invention provides a shift register unit including a first transistor, a second transistor, a second transistor, a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor. And storage capacitors;
所述第一晶体管的栅极和第一极连接输入信号端,第二极连接上拉结点; 所述第二晶体管的栅极连接复位信号端, 第一极连接所述上拉结点, 第 二极连接参考电平线; The gate of the first transistor and the first pole are connected to the input signal end, the second pole is connected to the pull-up node; the gate of the second transistor is connected to the reset signal end, and the first pole is connected to the pull-up node, First Two poles connected to the reference level line;
所述第三晶体管的栅极连接所述上拉结点, 第一极连接第一时钟信号, 第二极连接输出信号端;  a gate of the third transistor is connected to the pull-up node, a first pole is connected to the first clock signal, and a second pole is connected to the output signal terminal;
所述第五晶体管的栅极连接下拉结点, 第一极连接所述输出信号端, 第 二极连接所述参考电平线;  a gate of the fifth transistor is connected to the pull-down node, a first pole is connected to the output signal terminal, and a second pole is connected to the reference level line;
所述第六晶体管的栅极连接所述下拉结点, 第一极连接所述上拉结点, 第二极连接所述参考电平线;  a gate of the sixth transistor is connected to the pull-down node, a first pole is connected to the pull-up node, and a second pole is connected to the reference level line;
所述第七晶体管的栅极和第一极连接第二时钟信号, 第二极连接所述下 拉结点;  The gate of the seventh transistor and the first pole are connected to the second clock signal, and the second pole is connected to the pull-down node;
所述第八晶体管的栅极连接输入信号端, 第一极连接所述下拉结点, 第 二极连接所述参考电平线;  The gate of the eighth transistor is connected to the input signal terminal, the first pole is connected to the pull-down node, and the second pole is connected to the reference level line;
所述存储电容的第一极连接所述上拉结点,第二极连接所述输出信号端。 迸一步地, 还包括第四晶体管, 所述第四晶体管的栅极连接所述上拉结 点, 第一极连接下拉结点, 第二极连接所述参考电平线。  The first pole of the storage capacitor is connected to the pull-up node, and the second pole is connected to the output signal end. Further, further comprising a fourth transistor, a gate of the fourth transistor is connected to the pull-up node, a first pole is connected to the pull-down node, and a second pole is connected to the reference level line.
迸一步地, 所述第一晶体管、 第二晶体管、 第≡晶体管、 第四晶体管、 第五晶体管、 第六晶体管、 第七晶体管、 第八晶体管均为 N型 TFT晶体管。  Further, the first transistor, the second transistor, the second transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, and the eighth transistor are all N-type TFT transistors.
迸一步地, 所述第一晶体管、 第二晶体管、 第≡晶体管、 第四晶体管、 第五晶体管、 第六晶体管、 第七晶体管、 第八晶体管均为 P型 TFT晶体管。  Further, the first transistor, the second transistor, the second transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, and the eighth transistor are all P-type TFT transistors.
迸一歩地, 所述参考电平线为低电平。  The reference level line is at a low level.
进一步地, 其控制方法如下:  Further, the control method is as follows:
第一阶段, 第一 ^钟信号为低电平, 第二时钟信号为高电平, 输入信号 为高电平端开启第一晶体管, 并对存储电容进行充电;  In the first stage, the first clock signal is low level, the second clock signal is high level, the input signal is high level to turn on the first transistor, and the storage capacitor is charged;
第二阶段, 第一^钟信号为高电平, 第二时钟信号为低电平, 输入信号 端为低电平, 复位信号端为低电平, 第一时钟信号开启第≡晶体管, 输出信 号端输出高电平;  In the second stage, the first clock signal is at a high level, the second clock signal is at a low level, the input signal terminal is at a low level, the reset signal terminal is at a low level, and the first clock signal is turned on a second transistor, and the output signal is The terminal outputs a high level;
第≡阶段, 第一时钟信号为低电平, 第二时钟信号为高电平, 复位信号 为高电平端开启第二晶体管, 存储电容通过第二晶体管放电, 使得第二晶体 管的第一极降为低电平, 第二时钟信号开启第七晶体管, 第七晶体管的第二 极为高电平, 使得第五晶体管和第六晶体管分别对输出信号端和第二晶体管 的第一极放电, 输出信号端输出低电平; In the third stage, the first clock signal is low level, the second clock signal is high level, the reset signal is high level to turn on the second transistor, and the storage capacitor is discharged through the second transistor, so that the first transistor of the second transistor is lowered. Is low, the second clock signal turns on the seventh transistor, and the second transistor is at a second high level, so that the fifth transistor and the sixth transistor respectively output the signal terminal and the second transistor The first pole discharge, the output signal terminal outputs a low level;
第四阶段, 第一时钟信号为高电平, 第二时钟信号为低电平, 输入信号 端为低电平, 复位信号端为低电平, 第一晶体管和第三晶体管均截止, 输出 信号端输出低电平;  In the fourth stage, the first clock signal is at a high level, the second clock signal is at a low level, the input signal terminal is at a low level, the reset signal terminal is at a low level, and the first transistor and the third transistor are both turned off, and the output signal is output. The terminal outputs a low level;
第五阶段, 第一日寸钟信号为低电平, 第二时钟信号为高电平, 输入信号 端为低电平, 复位信号端为低电平, 第一晶体管和第三晶体管均截止, 输出 信号端输出为低电平。  In the fifth stage, the first day clock signal is low level, the second clock signal is high level, the input signal end is low level, the reset signal end is low level, and the first transistor and the third transistor are both turned off. The output signal output is low.
本发明还提供了一种移位寄存器,包括多级级联的上述移位寄存器单元; 除第一级移位寄存器单元外, 其他任一级移位寄存器单元的输入信号端 连接上一级的信号输出端;  The present invention also provides a shift register comprising a plurality of cascaded shift register units; wherein the input signal terminals of any other stage shift register unit are connected to the upper stage except the first stage shift register unit Signal output
除最后一级移位寄存器单元外, 其他任一级移位寄存器单元的复位信号 端连接下一级的信号输出端。  Except for the last stage shift register unit, the reset signal terminal of any other stage shift register unit is connected to the signal output of the next stage.
所述第一级移位寄存器单元的输入信号端与所述最后第一级移位寄存器 单元的复位信号端都连接在起始信号端。  The input signal terminal of the first stage shift register unit and the reset signal terminal of the last first stage shift register unit are both connected to the start signal terminal.
本发明还提供了一种显示装置, 其包括上述移位寄存器。  The present invention also provides a display device including the above shift register.
本发明的上述技术方案具有如下优点: 本发明的移位寄存器单元在原有 信号传递功能的基础上用较少的晶体管实现了降噪处理, 不仅有效的 W制了 由晶体管自身阈值电压的漂移和相邻晶体管的干扰等可能造成的输出错误, 而且实现了液晶显示器窄边框化, 更降低了驱动电路的功耗, 进一步提升了 移位寄存器的输出特性及晶体管的使用寿命。  The above technical solution of the present invention has the following advantages: The shift register unit of the present invention implements noise reduction processing with fewer transistors on the basis of the original signal transmission function, and not only effectively reduces the drift of the threshold voltage of the transistor itself. The output of the adjacent transistor may cause an output error, and the narrow frame of the liquid crystal display is realized, the power consumption of the driving circuit is further reduced, and the output characteristics of the shift register and the service life of the transistor are further improved.
图 1是本发明实施例移位寄存器单元的结构示意图; 1 is a schematic structural diagram of a shift register unit according to an embodiment of the present invention;
图 2是本发明实施例移位寄存器单元的逻辑时序示意图;  2 is a logic timing diagram of a shift register unit in accordance with an embodiment of the present invention;
图 3是本发明实施例移位寄存器的结构示意图。 具体实施方式  FIG. 3 is a schematic structural diagram of a shift register according to an embodiment of the present invention. detailed description
下面结合^图和实施例对本发明的具体实施方式作进一步详细描述。 以 下实施例用于说明本发明, 但不用来限制本发明的范围。 如图 1所示, 本发明实施例提供了一种移位寄存器单元, 该移位寄存器 单元包括第一晶体管 Ml、 第二晶体管 M2、 第三晶体管 M3、 第四晶体管 M4、 第五晶体管 M5、 第六晶体管 M6、 第七晶体管 M7、 第八晶体管 M8及存储电容 CI ; 其中, The specific embodiments of the present invention are described in further detail below in conjunction with the drawings and embodiments. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention. As shown in FIG. 1 , an embodiment of the present invention provides a shift register unit, where the shift register unit includes a first transistor M1, a second transistor M2, a third transistor M3, a fourth transistor M4, and a fifth transistor M5. a sixth transistor M6, a seventh transistor M7, an eighth transistor M8, and a storage capacitor CI; wherein
所述第一晶体管 Ml的栅极和第一极连接输入信号端 G (N--1 ) , 第二极连 接上拉结点 PU;  The first transistor M1 has a gate and a first pole connected to the input signal terminal G (N--1), and a second pole is connected to the pull-up node PU;
所述第二晶体管 M2的栅极连接复位信号端 G (N l ) , 第一极连接所述上 拉结点 PU, 第二极连接参考电平线 VSS;  The gate of the second transistor M2 is connected to the reset signal terminal G (N l ), the first pole is connected to the pull-up node PU, and the second pole is connected to the reference level line VSS;
所述第三晶体管 M3 的栅极连接所述上拉结点 PU, 第一极连接第一时钟 信号 CLK, 第二极连接输出信号端 G (N) ; The gate of the third transistor M3 is connected to the pull-up node PU, the first pole is connected to the first clock signal CLK, and the second pole is connected to the output signal terminal G(N) ;
所述第四晶体管 M4的栅极连接所述上拉结点 PU, 第一极连接下拉结点 PD, 第二极连接所述参考电平线 VSS;  The gate of the fourth transistor M4 is connected to the pull-up node PU, the first pole is connected to the pull-down node PD, and the second pole is connected to the reference level line VSS;
所述第五晶体管 M5 的栅极连接下拉结点 PD, 第一极连接所述输出信号 端 G (N), 第二极连接所述参考电平线 VSS;  The gate of the fifth transistor M5 is connected to the pull-down node PD, the first pole is connected to the output signal terminal G (N), and the second pole is connected to the reference level line VSS;
所述第六晶体管 M6的栅极连接所述下拉结点 PD, 第一极连接所述上拉 结点 PU, 第二极连接所述参考电平线 vss ;  The gate of the sixth transistor M6 is connected to the pull-down node PD, the first pole is connected to the pull-up node PU, and the second pole is connected to the reference level line vss;
所述第七晶体管 M7 的栅极和第一极连接第二时钟信号 CLKB , 第二极连 接所述下拉结点 PD;  The gate of the seventh transistor M7 and the first pole are connected to the second clock signal CLKB, and the second pole is connected to the pull-down node PD;
所述第八晶体管 M8的栅极连接输入信号端 G (N+1 ) , 第一极连接所述下 拉结点 PD , 第二极连接所述参考电平线 VSS ;  The gate of the eighth transistor M8 is connected to the input signal terminal G (N+1 ), the first pole is connected to the pull-down node PD, and the second pole is connected to the reference level line VSS;
所述存储电容 C1 的第一极连接所述上拉结点 PU, 第二极连接所述输出 信号端 G (N)。  The first pole of the storage capacitor C1 is connected to the pull-up node PU, and the second pole is connected to the output signal terminal G (N).
其中, 第一^钟信号 CLK和第二时钟信号 CLKB均连接 IC驱动电路, 输 出信号端 G (N) 连接栅极线。  The first clock signal CLK and the second clock signal CLKB are both connected to the IC driving circuit, and the output signal terminal G (N) is connected to the gate line.
其中, 上拉结点 PU与第一晶体管 Ml第二极的电平相同, 下拉结点 PD与 第七晶体管 M7第二极的电平相同。  The pull-up node PU has the same level as the second pole of the first transistor M1, and the pull-down node PD has the same level as the second pole of the seventh transistor M7.
所述第一晶体管 Ml、 第二晶体管 M2、 第≡晶体管 M3、 第四晶体管 M4、 第五晶体管 M5、第六晶体管 M6、第七晶体管 M7、第八晶体管 M8均为 N型 TFT 晶体管。 需要说明的是, 所述第一晶体管、 第二晶体管、 第三晶体管、 第四晶体 管、 第五晶体管、第六晶体管、第七晶体管、第八晶体管也可以均为 P型 TFT 晶体管。 The first transistor M1, the second transistor M2, the second transistor M3, the fourth transistor M4, the fifth transistor M5, the sixth transistor M6, the seventh transistor M7, and the eighth transistor M8 are all N-type TFT transistors. It should be noted that the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, and the eighth transistor may all be P-type TFT transistors.
本发明实施例提供的上述移位寄存器单元, 在现有技术的基础上, 增加 了降噪设计, 有效地捣制了由于晶体管自身阈值电压的漂移和相邻晶体管的 干扰造成的输出错误, 并进一步提升了移位寄存器的输出特性及晶体管的使 用寿命。  The above-mentioned shift register unit provided by the embodiment of the present invention adds a noise reduction design based on the prior art, and effectively suppresses an output error caused by the drift of the threshold voltage of the transistor itself and the interference of adjacent transistors, and The output characteristics of the shift register and the lifetime of the transistor are further improved.
本发明还提供了一种由上述移位寄存器单元级联形成的移位寄存器, 其 包括级联的各级上述移位寄存器单元。  The present invention also provides a shift register formed by cascading the shift register units described above, which includes cascaded stages of the above shift register unit.
其中, 第一级移位寄存器单元的输入信号端连接起始信号端, 第一级移 位寄存器单元的复位信号端连接第二极移位寄存器单元的输出信号端; 最后 一级移位寄存器单元的输入信号端连接前一级移位寄存器单元的输出信号 端, 最后一级移位寄存器单元的复位信号端连接起始信号端; 除第一级和最 后一级移位寄存器单元外, 其余各级移位寄存器单元的输入信号端连接上一 级移位寄存器单元的输出信号端, 复位信号端连接下一级移位寄存器单元的 输出信号端。  Wherein, the input signal end of the first stage shift register unit is connected to the start signal end, and the reset signal end of the first stage shift register unit is connected to the output signal end of the second pole shift register unit; the last stage shift register unit The input signal end is connected to the output signal end of the shift register unit of the previous stage, and the reset signal end of the last stage shift register unit is connected to the start signal end; except for the first stage and the last stage shift register unit, The input signal terminal of the stage shift register unit is connected to the output signal terminal of the shift register unit of the first stage, and the reset signal terminal is connected to the output signal terminal of the shift register unit of the next stage.
具体地, 该移位寄存器包括 M级, 其中 M为栅线数量, 其中, M为正整 数, 如图 3所示图中 Shift Register表示以上所述的各级移位寄存器单元, 起始信号端 STV作为输入信号输入到第一级移位寄存器单元的输入信号端, 并—且.顺序地将栅极驱动信号输出至栅极线, 第 N级移位寄存器单元的输入信 号由第 N l级移位寄存器单元的输出信号提供, 复位信号由第 N+1级移位寄 存器单元的输出信号提供, 其中 N〈M, 第 M级移位寄存器单元的复位信号由 第一级移位寄存器单元的输入信号即起始信号提供, 也就是说起始信号一方 面作为第一极移位寄存器单元的输入信号, 另一方面也作为第 M级移位寄存 器单元的复位信号。  Specifically, the shift register includes M stages, where M is the number of gate lines, where M is a positive integer, as shown in FIG. 3, the Shift Register represents the shift register units of the above stages, and the start signal end The STV is input as an input signal to the input signal terminal of the first stage shift register unit, and - the gate drive signal is sequentially output to the gate line, and the input signal of the Nth stage shift register unit is determined by the Nth level The output signal of the shift register unit is provided, and the reset signal is provided by an output signal of the N+1th stage shift register unit, wherein N<M, the reset signal of the Mth stage shift register unit is used by the first stage shift register unit The input signal is the start signal, that is to say the start signal is used as the input signal of the first-pole shift register unit on the one hand and the reset signal of the M-stage shift register unit on the other hand.
下面结合图 2中所示的逻辑 H寸序示意图, 对本发明实施例提供的位移寄 存器中的第 N (N<M, M为移位寄存器的级数) 级移位寄存器单元的控制方法 进行说明, 其中, 所有晶体管均为高电平导通, 低电平截止。  The control method of the Nth (N<M, M is the number of stages of the shift register) shift register unit in the shift register provided by the embodiment of the present invention is described below with reference to the logic H-order diagram shown in FIG. 2 . , wherein all transistors are high-level on and low-level off.
第一阶段 T1 : 时钟信号 CLK为低电平, 第二时钟信号 CLKB为高电平, 作为输入信号的前级输出信号 G ( N-i ) 为高电平, 作为复位信号的下级输出 信号 G (N+I ) 为低电平, VSS为低电平信号。 高电平的输入信号 G (N--1 ) 使 得第一晶体管 Ml导通并对存储电容 C1充电, 使 PU点升为高电平, 此时第三 晶体管 M3的栅极开关打开, 但由于此时时钟信号 CLK为低电平, 第三晶体管 M3并没有导通, 输出信号端 G (N) 输出低电平; The first stage T1: the clock signal CLK is at a low level, and the second clock signal CLKB is at a high level. The front stage output signal G (Ni ) as an input signal is at a high level, the lower stage output signal G (N+I ) as a reset signal is at a low level, and VSS is a low level signal. The high-level input signal G (N--1 ) causes the first transistor M1 to be turned on and charges the storage capacitor C1 to raise the PU point to a high level, at which time the gate of the third transistor M3 is turned on, but due to At this time, the clock signal CLK is at a low level, the third transistor M3 is not turned on, and the output signal terminal G (N) outputs a low level;
在此阶段中, 由于第二时钟信号 CLKB和作为输入信号的前级输出信号 G ( N--1 ) 为高电平, 第四晶体管 M4、 第七晶体管 M7和第八晶体管 M8均导通, 第五晶体管 M5和第六晶体管 M6均处于截止状态, PD点为低电平, 有效防止 了第五晶体管 M5和第六晶体管 M6由于自身阈值电压的漂移和相邻晶体管的 干扰有漏电流而导致存储电容 C1充电不足。  In this stage, since the second clock signal CLKB and the pre-stage output signal G (N--1) as the input signal are at a high level, the fourth transistor M4, the seventh transistor M7, and the eighth transistor M8 are both turned on. The fifth transistor M5 and the sixth transistor M6 are both in an off state, and the PD point is at a low level, effectively preventing the fifth transistor M5 and the sixth transistor M6 from being leaked due to drift of the threshold voltage and interference of adjacent transistors. The storage capacitor C1 is not fully charged.
第二阶段 T2 : 时钟信号 CLK为高电平, 第二时钟信号 CLKB为低电平, 输入信号 G (N 1 ) 为低电平, 复位信号 G (N-f l ) 为低电平。 此时第一晶体管 Ml处于截止状态, 停止对存储电容 C1充电, 第三晶体管 M3导通, 输出信号 端 G (N ) 输出高电平;  The second stage T2: the clock signal CLK is high level, the second clock signal CLKB is low level, the input signal G (N 1 ) is low level, and the reset signal G (N-f l ) is low level. At this time, the first transistor M1 is in an off state, the charging of the storage capacitor C1 is stopped, the third transistor M3 is turned on, and the output signal terminal G (N ) outputs a high level;
在此阶段中, 由于时钟信号 CLK和 PU点为高电平, 第二时钟信号 CLKB 和输出信号 G (N- 1 ) 为低电平, 第七晶体管 M7和第八晶体管 M8均截止, 第 四晶体管 M4的栅极开关保持开态,对 PD点进行放噪处理并使其保持低电平, 防止第五晶体管 M5和第六晶体管 M6由于 PD点的噪声导致存储电容 C 1漏电 而最终导致输出信号端 G (N) 输出错误。  In this stage, since the clock signal CLK and the PU point are at a high level, the second clock signal CLKB and the output signal G (N-1) are at a low level, and the seventh transistor M7 and the eighth transistor M8 are both turned off, fourth The gate switch of the transistor M4 is kept in an on state, and the PD point is subjected to noise cancellation processing and kept at a low level, thereby preventing the fifth transistor M5 and the sixth transistor M6 from leaking due to noise of the PD point, thereby eventually causing an output. Signal terminal G (N) output error.
第≡阶段 T3 : 时钟信号 CLK为低电平, 第二时钟信号 CLKB为高电平, 输入信号 G (N- 1 ) 为低电平, 复位信号 G (N+1 ) 为高电平。 此时第二晶体管 M2导通, 存储电容 C1遥过第二晶体管 M2放电迅速使 PU点降为低电平, 第 三晶体管 Μ3截止。 由于第二^钟信号 CLKB为高电平, 输入信号 G (N- 1 ) 为 低电平, 第七晶体管 M7导通, 第八晶体管 M8截止, PD点为高电平, 使得第 五晶体管 M5和第六晶体管 M6分别对输出端 G (N) 和 PLI点进行快速放电保 证输出信号端 G (N) 输出为低电平, 实现复位功能;  The third stage T3: The clock signal CLK is low, the second clock signal CLKB is high, the input signal G (N-1) is low, and the reset signal G (N+1) is high. At this time, the second transistor M2 is turned on, and the storage capacitor C1 is discharged through the second transistor M2 to quickly lower the PU point to a low level, and the third transistor Μ3 is turned off. Since the second clock signal CLKB is at a high level, the input signal G (N-1) is at a low level, the seventh transistor M7 is turned on, the eighth transistor M8 is turned off, and the PD point is at a high level, so that the fifth transistor M5 is turned off. And the sixth transistor M6 performs fast discharge on the output terminals G (N) and PLI points respectively to ensure that the output signal terminal G (N) outputs a low level to realize a reset function;
第四阶段 T4: 时钟信号 CLK为高电平, 第二时钟信号 CLKB低电平, 输 入信号 G (N 1 ) 为低电平, 复位信号 G (N+1 ) 为低电平。 此时第一晶体管 Ml截止, PU点为低电平, 第三晶体管 M3截止, 输出信号端 G (N) 输出低电 平。 The fourth stage T4: the clock signal CLK is at a high level, the second clock signal CLKB is at a low level, the input signal G (N 1 ) is at a low level, and the reset signal G (N+1 ) is at a low level. At this time, the first transistor M1 is turned off, the PU point is low, the third transistor M3 is turned off, and the output signal terminal G (N) is output low. Flat.
在此阶段中, 若 PU点由于相邻晶体管串扰产生噪声, 第四晶体管 M4栅 极打开, 不断对 PD点进行放电, 使其保持低电平, 防止第五晶体管 M5和第 六晶体管 M6由于 PD点的噪声导致存储电容 C1漏电而最终导致输出信号端 (; ( N) 输出错误。  In this stage, if the PU point generates noise due to crosstalk of adjacent transistors, the gate of the fourth transistor M4 is turned on, and the PD point is continuously discharged to keep it low, preventing the fifth transistor M5 and the sixth transistor M6 from being PD. The noise of the point causes the storage capacitor C1 to leak and eventually causes the output signal terminal (; (N) output error.
第五阶段 T5 : 时钟信号 CLK为低电平, 第二时钟信号 CLKB高电平, 输 入信号 G (N- I ) 为低电平, 复位信号 G (N+I ) 为低电平。 此时第一晶体管 Ml截止, PU点为低电平, 第三晶体管 M3截止, 输出信号端 G (N) 输出低电 平;  The fifth stage T5: The clock signal CLK is low, the second clock signal CLKB is high level, the input signal G (N-I) is low level, and the reset signal G (N+I) is low level. At this time, the first transistor M1 is turned off, the PU point is low, the third transistor M3 is turned off, and the output signal terminal G (N) is output low;
在此阶段中, 由于第二时钟信号 CLKB为高电平, 第七晶体管 M7导通, 第八晶体管 M8截止, PD点为高电平, 第五晶体管 M5和第六晶体管 M6栅极 开关打开对 PU点和输出信号端 G (N) 进行放噪处理, 防止由于晶体管自身 阈值电压的漂移和相邻晶体管的干扰等可能造成的错误输出。  In this stage, since the second clock signal CLKB is at a high level, the seventh transistor M7 is turned on, the eighth transistor M8 is turned off, the PD point is at a high level, and the fifth transistor M5 and the sixth transistor M6 are turned on. The PU point and the output signal terminal G (N) perform noise-cancellation processing to prevent erroneous output due to drift of the threshold voltage of the transistor itself and interference of adjacent transistors.
在下一帧信号到来前,随着第一 ^钟信号 CLK和第二时钟信号 CLKB的周 期性变化, 第四晶体管 M4、 第五晶体管 M5和第六晶体管 M6不断的对 PU点、 PD点和输出信号端 G (N)进行放噪处理, 防止由于晶体管自身阐值电压的漂 移和相邻晶体管的干扰等可能造成的错误输出,保证输出的准确性和稳定性。  Before the arrival of the next frame signal, the fourth transistor M4, the fifth transistor M5, and the sixth transistor M6 continuously align the PU point, the PD point, and the output with the periodic change of the first clock signal CLK and the second clock signal CLKB. The signal terminal G (N) performs noise-cancellation processing to prevent erroneous output due to drift of the voltage of the transistor itself and interference of adjacent transistors, thereby ensuring output accuracy and stability.
在本发明的移位寄存器单元中, 除第七晶体管 M7外, 其余晶体管在一行 信号扫描时间内均工作时间极少。 此外, 在本发明的移位寄存器单元中, 与 第一晶体管和第≡晶体管相比, 其余晶体管的沟道宽度要小得多, 故虽然第 七晶体管在一行信号扫描时间内工作时间长些, 但功耗并没有增加许多, 整 个移位寄存器实现功耗的大幅降低。  In the shift register unit of the present invention, except for the seventh transistor M7, the remaining transistors operate for a minimum of one line of signal scanning time. In addition, in the shift register unit of the present invention, the channel widths of the remaining transistors are much smaller than those of the first transistor and the second transistor, so that although the seventh transistor operates for a longer period of time in one line of signal scanning time, However, the power consumption has not increased a lot, and the entire shift register achieves a significant reduction in power consumption.
综上所述, 本发明的移位寄存器单元在原有信号传递功能的基础上用较 少的晶体管实现了降噪处理, 不仅有效的 ίΦ制了由晶体管自身阈值电压的漂 移和相邻晶体管的千扰等可能造成的输出错误, 而且实现了液晶显示器窄边 框化, 更降低了驱动电路的功耗, 进一歩提升了移位寄存器的输出特性及晶 以上所述仅是本发明的几种优选实施方式, 应当指出, 对于本技术领域 的普通技术人员来说, 在不脱离本发明技术原理的前提下, 还可以做出若千 改迸和变型, 这些改迸和变型也应视为本发明的保护范围 In summary, the shift register unit of the present invention implements noise reduction processing with fewer transistors on the basis of the original signal transmission function, and not only effectively reduces the threshold voltage drift of the transistor itself and the thousand of adjacent transistors. Interference and other possible output errors, and the narrow frame of the liquid crystal display is realized, the power consumption of the driving circuit is further reduced, and the output characteristics of the shift register are further improved and the above is only a few preferred implementations of the present invention. It should be noted that those skilled in the art can make thousands if without departing from the technical principle of the present invention. Modifications and variations, these modifications and variations should also be considered as protection scope of the present invention.

Claims

1、 一种移位寄存器单元, 其特征在于: 包括第一晶体管、 第二晶体管、 第三晶体管、 第五晶体管、 第六晶体管、 第七晶体管、 第八晶体管及存储电 容; 其中, 1. A shift register unit, characterized by: including a first transistor, a second transistor, a third transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor and a storage capacitor; wherein,
所述第一晶体管的栅极和第一极连接输入信号端,第二极连接上拉结点; 所述第二晶体管的栅极连接复位信号端, 第一极连接所述上拉结点, 第 二极连接参考电平线; The gate electrode and the first electrode of the first transistor are connected to the input signal terminal, and the second electrode is connected to the pull-up node; the gate electrode of the second transistor is connected to the reset signal terminal, and the first electrode is connected to the pull-up node, The second pole is connected to the reference level line;
所述第三晶体管的栅极连接所述上拉结点, 第一极连接第一时钟信号, 第二极连接输出信号端; The gate of the third transistor is connected to the pull-up node, the first electrode is connected to the first clock signal, and the second electrode is connected to the output signal terminal;
所述第五晶体管的栅 连接下拉结点, 第一极连接所述输出信号端, 第 二极连接所述参考电平线; The gate of the fifth transistor is connected to the pull-down node, the first electrode is connected to the output signal terminal, and the second electrode is connected to the reference level line;
所述第六晶体管的栅 连接所述下拉结点, 第一极连接所述上拉结点, 第二极连接所述参考电平^ The gate of the sixth transistor is connected to the pull-down node, the first electrode is connected to the pull-up node, and the second electrode is connected to the reference level.
所述第七晶体管的栅 和第一极连接第二时钟信号, 第二极连接所述下 拉结点; The gate and first electrode of the seventh transistor are connected to the second clock signal, and the second electrode is connected to the pull-down node;
所述第八晶体管的栅 连接输入信号端, 第一极连接所述下拉结点, 第 二极连接所述参考电平线; The gate of the eighth transistor is connected to the input signal terminal, the first electrode is connected to the pull-down node, and the second electrode is connected to the reference level line;
所述存储电容的第一极连接所述上拉结点,第二极连接所述输出信号端。 The first pole of the storage capacitor is connected to the pull-up node, and the second pole is connected to the output signal terminal.
2、 根据权利要求 1所述的移位寄存器单元, 其特征在于: 还包括第四晶 体管, 所述第四晶体管的栅极连接所述上拉结点, 第一极连接下拉结点, 第 二极连接所述参考电平线。 2. The shift register unit according to claim 1, characterized in that: it further includes a fourth transistor, the gate of the fourth transistor is connected to the pull-up node, the first electrode is connected to the pull-down node, and the second pole is connected to the reference level line.
3、 根据权利要求 2所述的移位寄存器单元, 其特征在于: 所述第一晶体 管、 第二晶体管、 第三晶体管、 第四晶体管、 第五晶体管、 第六晶体管、 第 七晶体管、 第八晶体管均为 N型 TFT晶体管。 3. The shift register unit according to claim 2, characterized in that: the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, the eighth transistor The transistors are all N-type TFT transistors.
4、 根据权利要求 2所述的移位寄存器单元, 其特征在于: 所述第一晶体 管、 第二晶体管、 第三晶体管、 第四晶体管、 第五晶体管、 第六晶体管、 第 七晶体管、 第八晶体管均为 P型 TFT晶体管。 4. The shift register unit according to claim 2, characterized in that: the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, the eighth transistor The transistors are all P-type TFT transistors.
5、 根据权利要求 2所述的移位寄存器单元, 其特征在于: 所述参考电平 线为低电平。 5. The shift register unit according to claim 2, characterized in that: the reference level line is low.
6、 根据权利要求 2 5任一项所述的移位寄存器单元, 其特征在于: 其控 制方法如下: 6. The shift register unit according to any one of claims 2 to 5, characterized in that: its control method is as follows:
第一阶段, 第一时钟信号为低电平, 第二时钟信号为高电平, 输入信号 端为高电平开启第一晶体管, 对存储电容进行充电; In the first stage, the first clock signal is low level, the second clock signal is high level, and the input signal terminal is high level to turn on the first transistor to charge the storage capacitor;
第二阶段, 第一时钟信号为高电平, 第二时钟信号为低电平, 输入信号 端为低电平, 复位信号端为低电平, 第一日寸钟信号开启第三晶体管, 输出信 号端输出高电平; In the second stage, the first clock signal is high level, the second clock signal is low level, the input signal terminal is low level, the reset signal terminal is low level, the first clock signal turns on the third transistor and outputs The signal terminal outputs high level;
第三阶段, 第一日寸钟信号为低电平, 第二时钟信号为高电平, 复位信号 端为高电平开启第二晶体管, 存储电容通过第二晶体管放电, 使得第二晶体 管的第一极降为低电平, 第二时钟信号开启第七晶体管, 第七晶体管的第二 极为高电平, 使得第五晶体管和第六晶体管分别对输出信号端和第二晶体管 的第一极放电, 输出信号端输出低电平; In the third stage, the first clock signal is at a low level, the second clock signal is at a high level, the reset signal terminal is at a high level to turn on the second transistor, and the storage capacitor is discharged through the second transistor, causing the second transistor to One pole drops to a low level, the second clock signal turns on the seventh transistor, and the second pole of the seventh transistor reaches a high level, causing the fifth transistor and the sixth transistor to discharge the output signal terminal and the first pole of the second transistor respectively. , the output signal terminal outputs low level;
第四阶段, 第一时钟信号为高电平, 第二时钟信号为低电平, 输入信号 端为低电平, 复位信号端为低电平, 第一晶体管和第 晶体管均截止, 输出 信号端输出低电平; In the fourth stage, the first clock signal is high level, the second clock signal is low level, the input signal terminal is low level, the reset signal terminal is low level, the first transistor and the second transistor are both turned off, and the output signal terminal Output low level;
第五阶段, 第一^钟信号为低电平, 第二时钟信号为高电平, 输入信号 端为低电平, 复位信号端为低电平, 第一晶体管和第三晶体管均截止, 输出 信号端输出为低电平。 In the fifth stage, the first clock signal is low level, the second clock signal is high level, the input signal terminal is low level, the reset signal terminal is low level, the first transistor and the third transistor are both turned off, and the output The signal terminal output is low level.
7、 一种移位寄存器, 其特征在于: 包括多级级联的如权利要求 1 -5任一 项所述的移位寄存器单元; 7. A shift register, characterized in that: it includes a multi-stage cascade of shift register units according to any one of claims 1 to 5;
除第一级移位寄存器单元外, 其他任一级移位寄存器单元的输入信号端 连接上一级的信号输出端; Except for the first-stage shift register unit, the input signal terminal of any other stage shift register unit is connected to the signal output terminal of the previous stage;
除最后一级移位寄存器单元外, 其他任一级移位寄存器单元的复位信号 端连接下一级的信号输出端。 Except for the last stage shift register unit, the reset signal terminal of any other stage shift register unit is connected to the signal output terminal of the next stage.
8、 根据权利要求 7所述的移位寄存器, 其特征在于: 8. The shift register according to claim 7, characterized in that:
所述第一级移位寄存器单元的输入信号端与所述最后第一级移位寄存器 单元的复位信号端都连接在起始信号端。 The input signal terminal of the first-stage shift register unit and the reset signal terminal of the last first-stage shift register unit are both connected to the start signal terminal.
9、 一种显示装置, 其特征在于: 包括如权利要求 6所述的移位寄存器。 9. A display device, characterized by: comprising the shift register as claimed in claim 6.
PCT/CN2013/089631 2013-08-30 2013-12-17 Shift register unit, shift register and display device WO2015027628A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN2013103908150A CN103456365A (en) 2013-08-30 2013-08-30 Shift register unit, shift register and display device
CN201310390815.0 2013-08-30

Publications (1)

Publication Number Publication Date
WO2015027628A1 true WO2015027628A1 (en) 2015-03-05

Family

ID=49738640

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2013/089631 WO2015027628A1 (en) 2013-08-30 2013-12-17 Shift register unit, shift register and display device

Country Status (2)

Country Link
CN (1) CN103456365A (en)
WO (1) WO2015027628A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104036745B (en) * 2014-06-07 2017-01-18 深圳市华星光电技术有限公司 Drive circuit and liquid crystal display device
CN104575419B (en) * 2014-12-04 2017-03-15 上海天马微电子有限公司 A kind of shift register and its driving method
CN106531112B (en) * 2017-01-03 2019-01-11 京东方科技集团股份有限公司 Shift register cell and its driving method, shift register and display device
CN107146570A (en) * 2017-07-17 2017-09-08 京东方科技集团股份有限公司 Shift register cell, scan drive circuit, array base palte and display device
CN111524450B (en) * 2020-04-29 2022-03-08 昆山国显光电有限公司 Display device, binding impedance detection method thereof and screen crack detection method
CN111816127B (en) * 2020-07-27 2021-11-16 Oppo广东移动通信有限公司 GOA unit, driving method thereof, GOA circuit and display panel

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101556831B (en) * 2008-04-10 2011-04-13 北京京东方光电科技有限公司 Shift register
CN102867543A (en) * 2012-09-29 2013-01-09 合肥京东方光电科技有限公司 Shifting register, a grid driver and a display device
CN102945657A (en) * 2012-10-29 2013-02-27 京东方科技集团股份有限公司 Shift register unit, grid drive circuit, array substrate and display device
CN102956213A (en) * 2012-10-16 2013-03-06 北京京东方光电科技有限公司 Shifting register unit and array substrate gird driving device
CN102968950A (en) * 2012-11-08 2013-03-13 京东方科技集团股份有限公司 Shifting register unit and array substrate gate drive device
CN103198781A (en) * 2013-03-01 2013-07-10 合肥京东方光电科技有限公司 Shifting register unit and gate driving device and display device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100242244B1 (en) * 1997-08-09 2000-02-01 구본준 Scanning circuit

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101556831B (en) * 2008-04-10 2011-04-13 北京京东方光电科技有限公司 Shift register
CN102867543A (en) * 2012-09-29 2013-01-09 合肥京东方光电科技有限公司 Shifting register, a grid driver and a display device
CN102956213A (en) * 2012-10-16 2013-03-06 北京京东方光电科技有限公司 Shifting register unit and array substrate gird driving device
CN102945657A (en) * 2012-10-29 2013-02-27 京东方科技集团股份有限公司 Shift register unit, grid drive circuit, array substrate and display device
CN102968950A (en) * 2012-11-08 2013-03-13 京东方科技集团股份有限公司 Shifting register unit and array substrate gate drive device
CN103198781A (en) * 2013-03-01 2013-07-10 合肥京东方光电科技有限公司 Shifting register unit and gate driving device and display device

Also Published As

Publication number Publication date
CN103456365A (en) 2013-12-18

Similar Documents

Publication Publication Date Title
US10803823B2 (en) Shift register unit, gate driving circuit, and driving method
US9053678B2 (en) Shift register unit circuit, shift register, array substrate and liquid crystal display
US9640276B2 (en) Shift register unit and gate driving circuit
US10235919B2 (en) GOA signal determining circuit, determining method, gate driver circuit and display device
US10636372B2 (en) Shift register, gate driver, and driving method of shift register
US9318219B2 (en) Shift register unit and display device
US7406146B2 (en) Shift register circuit
WO2016070543A1 (en) Shift register unit, gate driving circuit and display device
US9779680B2 (en) Shift register unit, gate driving circuit and display apparatus
US7342568B2 (en) Shift register circuit
CN103646636B (en) Shift register, gate driver circuit and display device
US7760846B2 (en) Shift register and liquid crystal display (LCD)
WO2015027628A1 (en) Shift register unit, shift register and display device
WO2014161229A1 (en) Shift register unit, shift register, and display device
KR20080081822A (en) Shift register circuit and image display apparatus containing the same
US10971104B2 (en) Shift register and method for driving the same, gate driving circuit, and display device
WO2019015630A1 (en) Shift register unit, method for driving shift register unit, gate drive circuit, method for driving gate drive circuit, and display device
WO2014131229A1 (en) Shift register unit and gate drive circuit
JP2016517607A (en) Shift register, display device, gate drive circuit, and drive method
JP2009049985A (en) Method and device for reducing voltage at bootstrap point in electronic circuits
CN105702297B (en) Shift register, driving method, driving circuit, array substrate and display device
WO2014172965A1 (en) Shift register unit, gate driving circuit, and array substrate
US8836633B2 (en) Display driving circuit and display panel using the same
WO2018223834A1 (en) Shift register unit and driving method thereof, gate driving circuit, and display device
WO2018176577A1 (en) Goa drive circuit

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13892656

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13892656

Country of ref document: EP

Kind code of ref document: A1