WO2015019533A1 - センサ、入力装置および電子機器 - Google Patents
センサ、入力装置および電子機器 Download PDFInfo
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- WO2015019533A1 WO2015019533A1 PCT/JP2014/003151 JP2014003151W WO2015019533A1 WO 2015019533 A1 WO2015019533 A1 WO 2015019533A1 JP 2014003151 W JP2014003151 W JP 2014003151W WO 2015019533 A1 WO2015019533 A1 WO 2015019533A1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
- G06F3/0418—Control or interface arrangements specially adapted for digitisers for error correction or compensation, e.g. based on parallax, calibration or alignment
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0447—Position sensing using the local deformation of sensor cells
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0448—Details of the electrode shape, e.g. for enhancing the detection of touches, for generating specific electric field shapes, for enhancing display quality
Definitions
- This technology relates to a sensor, an input device, and an electronic device that can electrostatically detect an input operation.
- a sensor for an electronic device for example, a sensor that includes a capacitive element and has a configuration capable of detecting an operation position and a pressing force of an operator with respect to an input operation surface is known (for example, see Patent Document 1). .
- an object of the present technology is to provide a sensor, an input device, and an electronic device that can improve detection accuracy.
- the first technology is A conductor layer; A detection layer having a detection region and including a plurality of detection units arranged two-dimensionally in the detection region; A plurality of structures separating the conductor layer and the detection layer; Among the plurality of detection units, at least the detection unit on the peripheral side of the detection region is a sensor provided at a position shifted from the reference region of the two-dimensional array toward the inner side from the periphery of the detection region.
- the second technology is A first conductor layer; A second conductor layer; A detection layer that is provided between the first conductor layer and the second conductor layer, includes a detection region, and includes a plurality of detection units that are two-dimensionally arranged in the detection region; A plurality of first structures separating the first conductor layer and the detection layer; A plurality of second structures separating the detection layer and the second conductor layer, Among the plurality of detection units, at least the detection unit on the peripheral side of the detection region is a sensor provided at a position shifted from the reference region of the two-dimensional array toward the inner side from the periphery of the detection region.
- the third technology is An operation unit; A conductor layer provided on the surface or inside of the operation unit; A detection layer having a detection region and including a plurality of detection units arranged two-dimensionally in the detection region; A plurality of structures separating the conductor layer and the detection layer; Among the plurality of detection units, at least the detection unit on the peripheral side of the detection region is an input device provided at a position shifted from the reference region of the two-dimensional array toward the inner side from the peripheral region of the detection region. .
- the fourth technology is An operation unit; A first conductor layer provided on the surface or inside of the operation unit; A second conductor layer; A detection layer that is provided between the first conductor layer and the second conductor layer, includes a detection region, and includes a plurality of detection units that are two-dimensionally arranged in the detection region; A plurality of first structures separating the first conductor layer and the detection layer; A plurality of second structures separating the detection layer and the second conductor layer, Among the plurality of detection units, at least the detection unit on the peripheral side of the detection region is an input device provided at a position shifted from the reference region of the two-dimensional array toward the inner side from the peripheral region of the detection region. .
- the fifth technology is An operation unit; A conductor layer provided on the surface or inside of the operation unit; A detection layer having a detection region and including a plurality of detection units arranged two-dimensionally in the detection region; A plurality of structures separating the conductor layer and the detection layer; Among the plurality of detection units, at least the detection unit on the peripheral side of the detection region is an electronic device provided at a position shifted from the peripheral edge of the detection region toward the inner side with respect to the reference position of the two-dimensional array. .
- the sixth technology is An operation unit; A first conductor layer provided on the surface or inside of the operation unit; A second conductor layer; A detection layer that is provided between the first conductor layer and the second conductor layer, includes a detection region, and includes a plurality of detection units that are two-dimensionally arranged in the detection region; A plurality of first structures separating the first conductor layer and the detection layer; A plurality of second structures separating the detection layer and the second conductor layer, Among the plurality of detection units, at least the detection unit on the peripheral side of the detection region is an electronic device provided at a position shifted from the peripheral edge of the detection region toward the inner side with respect to the reference position of the two-dimensional array. .
- the detection accuracy of the sensor can be improved.
- FIG. 1 is a cross-sectional view illustrating an example of the configuration of the input device according to the first embodiment of the present technology.
- FIG. 2 is an enlarged cross-sectional view of a part of FIG.
- FIG. 3 is an exploded perspective view illustrating an example of the configuration of the input device according to the first embodiment of the present technology.
- FIG. 4A is a plan view showing an example of the configuration of the X electrode element.
- FIG. 4B is a plan view showing an example of the configuration of the Y electrode element.
- FIG. 5A is a plan view showing an example of the configuration of the X electrode.
- FIG. 5B is a plan view showing an example of the configuration of the Y electrode.
- 6A to 6P are schematic views showing examples of the shape of the unit electrode body.
- FIG. 1 is a cross-sectional view illustrating an example of the configuration of the input device according to the first embodiment of the present technology.
- FIG. 2 is an enlarged cross-sectional view of a part of FIG
- FIG. 7 is a plan view illustrating an example of the configuration of the detection unit.
- FIG. 8 is a plan view for explaining the shift position of the sensor.
- FIG. 9A is a cross-sectional view for explaining an example of a configuration of a detection unit.
- FIG. 9B is a plan view showing an example of an arrangement position of the structure body in the center portion of the detection region.
- FIG. 10 is a plan view illustrating an example of an arrangement position of a structure in the entire detection region.
- FIG. 11 is a cross-sectional view showing a state of a force applied to the structure when the input operation surface of the input device is pressed in the Z-axis direction (downward) by the operator.
- FIG. 9A is a cross-sectional view for explaining an example of a configuration of a detection unit.
- FIG. 9B is a plan view showing an example of an arrangement position of the structure body in the center portion of the detection region.
- FIG. 10 is a plan view illustrating an example of an arrangement
- FIG. 12 is a diagram illustrating the relationship between the state of the input device when the position on the structure is pressed by the operator and the capacitance change amount of each detection unit at that time.
- FIG. 13 is a diagram illustrating the relationship between the state of the input device when a position on the space is pressed by an operator and the capacitance change amount of each detection unit at that time.
- FIG. 14 is a block diagram illustrating an example of a configuration of an electric circuit of the input device according to the first embodiment of the present technology.
- 15A and 15B are diagrams for explaining the detection principle of the input device according to the first embodiment of the present technology.
- FIG. 16A is a cross-sectional view illustrating a first example of the configuration of the input device according to the first modification of the first embodiment of the present technology.
- FIG. 16B is a cross-sectional view illustrating a second example of the configuration of the input device according to the first modification of the first embodiment of the present technology.
- FIG. 17 is a cross-sectional view illustrating an example of the configuration of the input device according to the second modification of the first embodiment of the present technology.
- FIG. 18 is a plan view showing an example of the arrangement of the structure and the X and Y electrodes.
- FIG. 19 is a cross-sectional view illustrating an example of the configuration of the input device according to the third modification of the first embodiment of the present technology.
- FIG. 20A is a plan view illustrating an example of a configuration of an electrode layer in an input device according to Modification 4 of the first embodiment of the present technology.
- FIG. 20B is a plan view showing an example of the configuration of the X and Y electrodes shown in FIG. 20A.
- FIG. 21 is a cross-sectional view illustrating a first example of the configuration of the input device according to the fifth modification of the first embodiment of the present technology.
- FIG. 22A is a cross-sectional view illustrating a second example of the configuration of the input device according to the modification 5 of the first embodiment of the present technology.
- FIG. 22B is a cross-sectional view illustrating a third example of the configuration of the input device according to the modification 5 of the first embodiment of the present technology.
- FIG. 23 is a cross-sectional view illustrating a fourth example of the configuration of the input device according to the fifth modification of the first embodiment of the present technology.
- FIG. 21 is a cross-sectional view illustrating a first example of the configuration of the input device according to the fifth modification of the first embodiment of the present technology.
- FIG. 22A is a cross-sectional view illustrating a second example of
- FIG. 24A is a cross-sectional view illustrating an example of the configuration of the input device according to the second embodiment of the present technology.
- 24B is an enlarged cross-sectional view illustrating a part of FIG. 24A.
- FIG. 25A is a plan view showing an example of the configuration of the X electrode.
- FIG. 25B is a plan view showing an example of the configuration of the Y electrode.
- FIG. 26A is a plan view showing an example of an arrangement of X electrodes and Y electrodes.
- FIG. 26B is a sectional view taken along line AA in FIG. 25A.
- FIG. 27A is a cross-sectional view illustrating a first example of a configuration of an input device according to a modification of the second embodiment of the present technology.
- FIG. 27A is a cross-sectional view illustrating a first example of a configuration of an input device according to a modification of the second embodiment of the present technology.
- FIG. 27B is a cross-sectional view illustrating a second example of the configuration of the input device according to the modified example of the second embodiment of the present technology.
- FIG. 28A is a plan view showing a first example of the configuration of the X electrode.
- FIG. 28B is a plan view showing a first example of the configuration of the Y electrode.
- FIG. 29A is a plan view showing a second example of the configuration of the X electrode.
- FIG. 29B is a plan view showing a second example of the configuration of the Y electrode.
- FIG. 30A is a cross-sectional view illustrating a first example of the configuration of the input device according to the third embodiment of the present technology.
- FIG. 30B is a cross-sectional view illustrating a second example of the configuration of the input device according to the third embodiment of the present technology.
- FIG. 31A is a cross-sectional view illustrating a first example of the configuration of the input device according to the first modification of the third embodiment of the present technology.
- FIG. 31B is a cross-sectional view illustrating a second example of the configuration of the input device according to the first modification of the third embodiment of the present technology.
- FIG. 32A is a plan view illustrating a first example of the configuration of the X and Y electrodes in the input device according to the second modification of the third embodiment of the present technology.
- FIG. 32B is a plan view illustrating a second example of the configuration of the X and Y electrodes in the input device according to the second modification of the third embodiment of the present technology.
- FIG. 33 is a cross-sectional view illustrating an example of the configuration of the X electrode and the Y electrode of the input device according to the fourth embodiment of the present technology.
- FIG. 34 is a cross-sectional view illustrating an example of the configuration of the input device according to the fifth embodiment of the present technology.
- FIG. 35 is a plan view showing an example of the configuration of the electrode layer of the input device shown in FIG.
- FIG. 36A is a perspective view illustrating an example of an appearance of an input device according to the sixth embodiment of the present technology.
- FIG. 36B is a perspective view illustrating an example of the configuration of the electrode layer of the input device illustrated in FIG. 36A.
- FIG. 36C is a perspective view illustrating an example of a configuration of an input device according to a modification of the sixth embodiment of the present technology.
- FIG. 37A is a plan view illustrating an example of an appearance of the input device according to the seventh embodiment.
- FIG. 37B is a perspective view illustrating an example of a configuration of an electrode layer of the input device illustrated in FIG. 37A.
- FIG. 38 is a cross-sectional view illustrating an example of the configuration of the input device according to the eighth embodiment of the present technology.
- FIG. 39A is a cross-sectional view illustrating an example of a configuration of an operation member according to an input device according to an eighth embodiment of the present technology.
- FIG. 39B is a cross-sectional view showing a modification of the operation member.
- FIG. 40A is a perspective view illustrating a first example of an electronic apparatus according to the ninth embodiment of the present technology.
- FIG. 40B is a perspective view illustrating a second example of the electronic device according to the ninth embodiment of the present technology.
- FIG. 41A is a perspective view illustrating a third example of an electronic apparatus according to the ninth embodiment of the present technology.
- FIG. 41B is a perspective view illustrating a fourth example of the electronic device according to the ninth embodiment of the present technology.
- FIG. 40A is a perspective view illustrating a first example of an electronic apparatus according to the ninth embodiment of the present technology.
- FIG. 40B is a perspective view illustrating a second example of the electronic device according to the ninth embodiment of the present technology.
- FIG. 41A
- FIG. 42A is a cross-sectional view showing the simulation conditions according to the test example.
- FIG. 42B is a plan view showing the simulation conditions according to the test example.
- FIG. 43 is a diagram illustrating a simulation result according to the test example.
- FIG. 44 is a diagram illustrating a result of simulation according to a test example.
- the shape of the sensor and the input device it is preferable to select the shape of the sensor and the input device according to the shape of the target to which they are applied.
- Examples include a flat plate shape, a curved plate shape, a cylindrical shape, and a spherical shell shape, but are not limited thereto.
- the shape of the detection region is preferably selected according to the shape of the target to which they are applied.
- Illustrative examples include a rectangular shape, a circular shape, an elliptical shape, a cylindrical shape, a polygonal shape, and an indefinite shape, but are not limited thereto.
- the plurality of structures have a configuration capable of maintaining the distance between the conductor layer and the detection layer in the detection region, and the configuration is not limited. From the viewpoint of detection sensitivity and the like, the plurality of structures are preferably provided scattered in the detection region.
- a peripheral structure provided at the periphery of the detection region and separating the conductor layer and the detection layer is further provided.
- the peripheral structure only needs to have a configuration capable of maintaining the distance between the conductor layer and the detection layer at the periphery of the detection region, and the configuration is not limited.
- a configuration that is provided continuously along the periphery of the detection region a configuration that is provided intermittently along the periphery of the detection region, and the like can be given.
- Examples of the peripheral structure having a configuration that is continuously provided along the periphery of the detection region include a frame and a wall.
- the shift of the detection unit is performed.
- the direction is preferably the direction from the periphery of the detection region to the center.
- a plurality of structures provided in the detection region and a peripheral structure provided in the periphery of the detection region are provided.
- at least the structure on the periphery side of the detection region is provided at a position shifted from the reference position of the structure array toward the inside from the periphery of the detection region. It is preferable.
- the detection region has a shape such as a rectangular shape, a circular shape, an elliptical shape, a polygonal shape, an indefinite shape, and the detection region is surrounded by the peripheral structure
- the shift direction of the structure is The direction from the peripheral edge of the detection region to the center is preferable.
- the number of detection regions included in the detection layer is not limited to a single number, and may be a plurality. In this case, it is preferable that a peripheral structure is provided around each of the plurality of detection regions.
- the inventors of the present invention have a conductor layer, a detection region, a detection layer including a plurality of detection units two-dimensionally arranged in the detection region, and a plurality of layers separating the conductor layer and the detection layer.
- a new sensor with a structure has been found.
- an input operation is performed by applying a load to the input operation surface, deforming at least one of the conductor layer and the detection layer, and changing the distance between the conductor layer and the detection layer.
- the present inventors have intensively studied to suppress the occurrence of the displacement of the deformation peak described above. As a result, the present inventors have shifted the detection unit at least on the peripheral side of the detection region among the plurality of detection units from the reference position of the two-dimensional array toward the inner side from the peripheral region of the detection region. It has been found that the setting position of each detection unit in the control unit is set to the reference position (virtual equidistant arrangement position) of the two-dimensional arrangement.
- FIG. 1 is a cross-sectional view illustrating an example of the configuration of the input device 100 according to the first embodiment of the present technology.
- FIG. 2 is an enlarged cross-sectional view of a part of FIG.
- FIG. 3 is an exploded perspective view illustrating an example of the configuration of the input device 100 according to the first embodiment of the present technology.
- the input device 100 includes a flexible display (display unit) 2 that receives an operation by a user, and a sensor 1 that detects the user's operation.
- the input device 100 is configured as a touch panel display, for example, and is incorporated in an electronic device described later.
- the X axis and the Y axis indicate axes orthogonal to each other in the main surface of the sensor 1, and the Z axis is an axis orthogonal to the X axis and the Y axis (parallel to the thickness direction of the sensor 1).
- the sensor 1 and the display 2 have a flat plate shape extending in a direction perpendicular to the Z axis.
- the display 2 has a first surface 2m and a second surface 2n opposite to the first surface 2m.
- the sensor 1 is disposed on the second surface 2n side of the display 2.
- the sensor 1 and the display 2 may be bonded together via the adhesive layer 17.
- the display 2 has both a function as an input operation unit in the input device 100 and a function as a display unit. That is, the display 2 causes the first surface 2m to function as an input operation surface and a display surface, and displays an image corresponding to an operation by the user from the first surface 2m upward in the Z-axis direction.
- On the first surface 2m for example, an image corresponding to a keyboard, GUI (Graphical User Interface), and the like are displayed. Examples of the operator that performs an operation on the display 2 include a finger and a stylus.
- the display 2 is, for example, a display including a glass substrate, a film display, or a flexible display. When the display 2 including a glass substrate is used, the effect according to this embodiment is particularly remarkable.
- the specific configuration of the display 2 is not particularly limited.
- As the display 2, for example, electronic paper, an organic EL (electroluminescence) display, an inorganic EL display, a liquid crystal display, and the like can be used. However, the display 2 is not limited thereto.
- the thickness of the display 2 is, for example, in the range of 0.1 mm to 1 mm, but is not limited to this range.
- the Young's modulus of the display 2 is, for example, in a range from 70 GPa to 250 GPa, but is not limited to this range.
- the display 2 is configured as a part of the operation member 3 of the input device 100.
- the operation member 3 has a laminated structure of a display 2 having a first surface 2m and a second surface 2n and a metal layer 11. That is, the operation member 3 has a first surface 2m that receives an operation by the user and a second surface 2n on which the metal layer 11 is formed, and is configured in a deformable sheet shape.
- the sensor 1 includes a metal layer (first conductor layer) 11, a support layer (first support layer) 12, an adhesive layer 13, an electrode layer (detection layer) 14, and a support layer (second support layer). ) 15 and a conductor layer (second conductor layer) 16.
- the sensor 1 electrostatically changes a distance between the metal layer 11 and the electrode layer 14, and the conductor layer 16 and the electrode layer 14 due to an input operation on the first surface 2m of the display 2. By detecting this, the input operation is detected.
- the input operation is not limited to a conscious pressing (push) operation on the first surface 2m, and may be a contact (touch) operation. That is, since the input device 100 can detect even a minute pressing force (for example, about several tens of grams) applied by a general touch operation, a touch operation similar to a normal touch sensor can be performed. Composed.
- the metal layer 11 is provided on one main surface side of the electrode layer 14, and the conductor layer 16 is provided on the other main surface side.
- a support layer 12 is provided between the electrode layer 14 and the metal layer 11.
- a support layer 15 is provided between the electrode layer 14 and the conductor layer 16.
- An adhesive layer 13 is provided between the support layer 12 and the electrode layer 14, and the support layer 12 and the electrode layer 14 are bonded together via the adhesive layer 13. Note that a configuration in which the adhesive layer 13 is omitted and the support layer 12 is directly provided on one main surface of the electrode layer 14 may be employed.
- the electrode layer 14 includes a plurality of detection units 40s.
- the metal layer 11 has flexibility. For this reason, the metal layer 11 can be deformed following the deformation of the display 2.
- the metal layer 11 has, for example, a sheet shape, a foil shape, or a mesh shape.
- the metal layer 11 contains, for example, a metal such as Cu (copper), Al (aluminum), stainless steel (SUS) as a main component.
- the thickness of the metal layer 11 is, for example, several tens of nm to several tens of ⁇ m, but is not limited to this range.
- the metal layer 11 is connected to a ground potential, for example.
- a method for forming the metal layer 11 for example, a method in which the metal layer 11 is attached to the second surface 2 n of the display 2 through the adhesive layer 17, a vacuum film formation process such as a sputtering method or a vapor deposition method is used. Examples include a method of directly forming the metal layer 11 on the second surface 2n, a method of printing or applying a conductive paste on the second surface 2n of the display 2, and drying and curing, but are not limited thereto. .
- the adhesive layer 13 is made of, for example, an insulating adhesive or pressure-sensitive adhesive tape.
- the adhesive for example, one or more selected from the group consisting of an acrylic adhesive, a silicone adhesive, a urethane adhesive, and the like can be used.
- pressure sensitive adhesion is defined as a kind of adhesion. According to this definition, the adhesive layer is regarded as a kind of adhesive layer.
- the conductor layer 16 constitutes the lowermost part of the sensor 1 and is disposed to face the metal layer 11 in the Z-axis direction.
- the conductor layer 16 has higher bending rigidity than, for example, the metal layer 11 and the electrode layer 14, and functions as a support plate for the input device 100.
- a plating film or vapor deposition is formed on a metal plate containing a metal material such as an Al alloy or Mg (magnesium) alloy, or a conductor plate such as a carbon fiber reinforced plastic, or an insulator layer containing a plastic material.
- a laminate in which a conductive layer such as a film, a sputtering film, or a metal foil is formed can be used.
- the thickness of the conductor layer 16 is, for example, about 0.3 mm, but is not particularly limited to this thickness.
- the conductor layer 16 is connected to a ground potential, for example.
- Examples of the shape of the conductor layer 16 include, but are not limited to, a flat plate shape.
- the conductor layer 16 may have a step portion.
- One or more openings may be provided in the conductor layer 16.
- the conductor layer 16 may have a mesh configuration.
- the support layer 12 includes a plurality of structures 21 and a frame body (peripheral structure) 22.
- the plurality of structures 21 and the frame body 22 are provided between the metal layer 11 and the electrode layer 14, and are separated from the metal layer 11 and the electrode layer 14.
- the plurality of structures 21 are two-dimensionally arranged at a predetermined interval on one principal surface (XY plane) of the metal layer 11 or the conductor layer 16, and a space portion 23 is provided between the structures 21.
- the structure 21 includes a structure portion 21a and a joint portion 21b.
- the structure portion 21a is, for example, a cone shape, a column shape (for example, a columnar shape or a polygonal column shape), a needle shape, a partial shape of a sphere (for example, a hemispherical shape), or a partial shape of an ellipsoid (for example, a semi-elliptical shape ), Polygonal shapes, and the like, but are not limited to these shapes, and other shapes may be adopted.
- the joint portion 21b is provided on the structure portion 21a, and the structure portion 21a and the metal layer 11 are bonded to each other through the joint portion 21b.
- the structure of the structure 21 is not limited to the structure in which the structure portion 21a and the joint portion 21b are separated as described above, and the structure portion 21a and the joint portion 21b are integrally formed in advance. You may make it employ
- the material of the structure body 21 for example, a material capable of realizing both functions of the structure portion 21a and the joint portion 21b is selected.
- the frame body 22 includes a structure portion 22a and a joint portion 22b.
- the structure portion 22a is continuously formed so as to surround the periphery of one main surface of the base material 25.
- the width of the frame 22 is not particularly limited as long as the strength of the support layer 12 and the entire input device 100 can be sufficiently secured.
- the thicknesses (heights) of the structural body 21 and the frame body 22 are substantially the same, for example, several ⁇ m to several hundred ⁇ m.
- the joint 22b is provided on the structure 22a, and the structure 22a and the metal layer 11 are bonded to each other through the joint 22b.
- the structure of the frame body 22 is not limited to the structure in which the structure portion 22a and the joint portion 22b are separated as described above, and the structure portion 22a and the joint portion 22b are integrally formed in advance. You may make it employ
- the material of the frame body 22 for example, a material capable of realizing both functions of the structure portion 22 a and the joint portion 22 b is selected.
- an insulating resin material is used as the material of the structural parts 21a and 22a.
- a resin material a photocurable resin such as an ultraviolet curable resin can be used.
- an adhesive resin material or the like is used as the material of the joining portions 21b and 22b.
- the elastic modulus of the structure portion 21a is not particularly limited, and can be appropriately selected within a range where desired detection sensitivity and the like can be obtained.
- the structure portion 21a can be deformed together with the display 2 in accordance with the pressing of the first surface 2m by an operation element (for example, a stylus) or the like, and can be elastic enough to deform the electrode layer 14.
- an operation element for example, a stylus
- the support layer 12 may further include a plurality of adhesion preventing portions (not shown).
- the adhesion preventing portion is provided in the space portion 23 between the structures 21. More specifically, it is provided on one main surface of the electrode layer 14 in the space 23.
- the height of the adhesion preventing portion is not particularly limited as long as it is lower than the height of the structural body 21 and the frame body 22, and is formed to be lower than, for example, the structural portions 21 a and 22 a.
- the shape of the adhesion preventing portion is not particularly limited, but examples thereof include island shapes and flat film shapes.
- the support layer 12 may be configured by a laminated structure of the base material 25, the structural layer 26, and the bonding layer 27.
- the structural layer 26 is provided on one main surface of the substrate 25.
- the structural layer 26 includes, for example, a plurality of structural portions 21a and 22a that are two-dimensionally arranged on the one main surface of the substrate 25 at a predetermined interval.
- the bonding layer 27 includes a plurality of bonding portions 21b and 22b provided on the plurality of structure portions 21a and 22a, respectively.
- the base material 25 is a flexible sheet, for example.
- a material of the base material 25 it is preferable to use an insulating and flexible material.
- examples of such materials include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), acrylic resin (PMMA) polyimide (PI), triacetyl cellulose (TAC), polyester, polyamide (PA). , Aramid, polyethylene (PE), polyacrylate, polyether sulfone, polysulfone, polypropylene (PP), diacetyl cellulose, polyvinyl chloride, epoxy resin, urea resin, urethane resin, melamine resin, cyclic olefin polymer (COP), norbornene Based thermoplastic resins.
- the thickness of the substrate 25 is, for example, several ⁇ m to several 100 ⁇ m, but is not limited to this range.
- the support layer 15 includes a plurality of structures 51 and a frame body (peripheral structure) 52.
- the plurality of structural bodies 51 and the frame body 52 are provided between the electrode layer 14 and the conductor layer 16, and are separated from the electrode layer 14 and the conductor layer 16.
- the plurality of structures 51 are two-dimensionally arranged at a predetermined interval on one main surface of the electrode layer 14 or the conductor layer 16, and a space 53 is provided between the structures 51.
- a space 53 is also provided between the structural body 51 and the frame body 52.
- the structure 51 is disposed between adjacent structures 21 when the input device 100 is viewed from the Z-axis direction.
- the frame body 52 is continuously formed so as to surround the periphery of one main surface of the electrode layer 14 or the conductor layer 16.
- the width of the frame 52 is not particularly limited as long as the strength of the support layer 15 and the input device 100 as a whole can be sufficiently ensured.
- the width of the frame 52 is configured to be substantially the same as that of the frame 22.
- the structure 51 is, for example, a cone shape, a column shape (for example, a columnar shape or a polygonal column shape), a needle shape, a partial shape of a sphere (for example, a hemispherical shape), or a partial shape of an ellipsoid (for example, a semi-elliptical shape). ), Polygonal shapes, and the like, but are not limited to these shapes, and other shapes may be adopted.
- the structure body 51 and the frame body 52 have a function of a joint portion that joins the electrode layer 14 and the conductor layer 16 in addition to a function as a separation portion that separates the electrode layer 14 and the conductor layer 16. ing.
- the thickness of the structural body 51 and the frame body 52 is, for example, several ⁇ m to several hundred ⁇ m, but is not limited to this range.
- the thickness of the structure 51 is preferably smaller than the thickness of the structure 21. This is because, as shown in FIG. 12, the electrode layer 14 can be deformed until it bottoms on the conductor layer 16 to obtain a large change in capacitance.
- the elastic modulus of the structure 51 is not particularly limited, and can be appropriately selected within a range where desired detection sensitivity and the like can be obtained.
- the structure 51 has an elasticity that can be deformed together with the electrode layer 14 in response to the pressing of the first surface 2m by an operator or the like.
- the electrode layer 14 has flexibility and is configured to be deformable in response to pressing of the first surface 2m by an operation element or the like.
- the electrode layer 14 is provided between the metal layer 11 and the conductor layer 16, and can detect electrostatically changes in the distance between the metal layer 11 and the conductor layer 16.
- the electrode layer 14 is, for example, a laminate including an X electrode element (first electrode element) 41, a Y electrode element (second electrode element) 42, and an adhesive layer 43.
- the adhesive layer 43 is provided between the X electrode element 41 and the Y electrode element 42, and the X electrode element 41 and the Y electrode element 42 are bonded together via the adhesive layer 43.
- the electrode layer 14 has a detection area 14Ra and a frame body arrangement area 14Rb.
- the frame arrangement region 14Rb is provided so as to surround the detection region 14Ra.
- the detection area 14Ra and the frame body arrangement area 14Rb are usually provided adjacent to each other.
- a plurality of detection units 40s and a plurality of structures 21 and 51 are two-dimensionally arranged.
- the frame body arrangement region 14Rb is a region for arranging the frame bodies 22 and 52. Specifically, the frame body 22 is arranged in the frame body arrangement region 14Rb on the side corresponding to the metal layer 11, and the frame body 52 is arranged in the frame body arrangement region 14Rb on the side corresponding to the conductor layer 16.
- the detection area 14Ra is an area for the user to perform an input operation using an operator or the like, and is defined by the frame body arrangement area 14Rb, that is, the frame bodies 22 and 52.
- the adhesive layer 43 is the same as the adhesive layer 13 described above.
- the X electrode element 41 includes, for example, a base material 41a and a plurality of X electrodes 41b.
- the plurality of X electrodes 41b are provided on one main surface of the base material 41a, for example.
- the Y electrode element 42 includes a base material 42a and a plurality of Y electrodes 42b.
- the plurality of Y electrodes 42b are provided, for example, on one main surface of the base material 42a.
- the plurality of X electrodes 41b and the plurality of Y electrodes 42b are in a relationship of orthogonally intersecting.
- the base materials 41a and 42a are flexible sheets.
- an insulating and flexible material can be used as a material of the base materials 41a and 42a.
- examples of such materials include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), acrylic resin (PMMA) polyimide (PI), triacetyl cellulose (TAC), polyester, polyamide (PA).
- the thickness of the base materials 41a and 42a is, for example, several tens of ⁇ m to several hundreds of ⁇ m, but is not limited to this range.
- the sensor 1 includes a support layer 15, an electrode layer (detection layer) 14, an adhesive layer 13, and a support layer from the conductor layer 16 toward the metal layer 11 as shown in FIG.
- the structure of the sensor 1 is not limited to this.
- the sensor 1 is laminated in the order of the support layer 12, the adhesive layer 13, the electrode layer (detection layer) 14, and the support layer 15 from the conductor layer 16 toward the metal layer 11 in the reverse order of the above-described lamination. You may have the structure made.
- the substrate 25 is disposed on the surface of the electrode layer 14, and a plurality of structures are provided between the substrate 25 and the metal layer 11.
- the structure of the sensor 1 is not limited to this.
- the sensor 1 has a configuration in which the base material 25 is disposed on the surface of the metal layer 11, and the plurality of structures 21 and the frame body 22 are disposed between the base material 25 and the electrode layer 14. Also good.
- FIG. 4A is a plan view showing an example of the configuration of the X electrode element 41.
- the plurality of X electrodes 41b When viewed from the Z-axis direction, the plurality of X electrodes 41b extend substantially linearly in the X-axis direction and are arranged at a predetermined interval in the Y-axis direction.
- Each of the plurality of X electrodes 41b is led out to the peripheral portion of the base material 41a by a lead wire or the like, and electrically connected to a plurality of X electrode terminals (not shown).
- the plurality of X electrodes 41 b are electrically connected to the control unit 71 via these X electrode terminals.
- FIG. 4B is a plan view showing an example of the configuration of the Y electrode element 42.
- the plurality of Y electrodes 42b When viewed from the Z-axis direction, the plurality of Y electrodes 42b extend substantially linearly in the Y-axis direction and are arranged at a predetermined interval in the X-axis direction.
- Each of the plurality of Y electrodes 42b is led out to the peripheral edge of the base material 42a by a lead line or the like, and is electrically connected to each of a plurality of Y electrode terminals (not shown).
- the plurality of Y electrodes 42 b are electrically connected to the control unit 71 via these terminals.
- a printing method such as a screen printing method, a gravure offset printing method or an ink jet printing method, or a patterning method using a photolithography technique can be used.
- FIG. 5A is a plan view showing an example of the configuration of the X electrode 41b.
- the X electrode 41b includes a plurality of unit electrode bodies 41m and a plurality of connecting portions 41n that connect the plurality of unit electrode bodies 41m to each other.
- the unit electrode body 41m is configured by an electrode group including a group of a plurality of sub-electrodes (electrode elements) 41w.
- the plurality of sub-electrodes have a regular or irregular pattern.
- FIG. 5A shows an example in which the plurality of sub-electrodes have a regular pattern.
- the plurality of sub-electrodes 41w are linear conductive members extending in the X-axis direction, and these conductive members are arranged in a stripe shape.
- the connecting portion 41n extends in the X-axis direction and connects adjacent unit electrode bodies 41m.
- FIG. 5B is a plan view showing an example of the configuration of the Y electrode 42b.
- the Y electrode 42b includes a plurality of unit electrode bodies 42m and a plurality of connecting portions 42n that connect the plurality of unit electrode bodies 42m to each other.
- the unit electrode body 42m is configured by an electrode group including a group of a plurality of sub-electrodes (electrode elements) 42w.
- the plurality of sub-electrodes have a regular or irregular pattern.
- FIG. 5B shows an example in which the plurality of sub-electrodes have a regular pattern.
- the plurality of sub-electrodes 42w are linear conductive members extending in the Y-axis direction, and these conductive members are arranged in stripes.
- the connecting portion 42n extends in the Y-axis direction and connects adjacent unit electrode bodies 42m.
- the X and Y electrodes 41b and 42b are arranged so as to intersect each other so that the unit electrode body 41m and the unit electrode body 42m overlap each other when viewed from the Z-axis direction. Note that the X and Y electrodes 41b and 42b are not limited to the above-described configuration, and for example, the unit electrode bodies 41m and 42m may have various configurations.
- 6A to 6P are schematic views showing examples of the shapes of the unit electrode bodies 41m and 42m.
- 6A to 6P show the shape at the intersection of the X and Y electrodes 41b and 42b, and the shape of the other portions is not particularly limited, and may be, for example, a straight line.
- the combination of the shapes of the unit electrode bodies 41m and 42m of the X and Y electrodes 41b and 42b may be two sets of the same type among the shapes shown in FIGS. 5A, 5B and 6A to 6P, or different types. Two sets are also acceptable.
- FIG. 6A shows an example in which the unit electrode body 41m is composed of an assembly of a plurality of linear electrode patterns extending radially from the center.
- FIG. 6B shows an example in which one of the radial line electrodes shown in the example of FIG. 6A is formed thicker than the other line electrodes. Thereby, the electrostatic capacitance change amount on a thick line electrode can be made higher than on other line electrodes.
- FIG. 6C and FIG. 6D show an example in which an annular linear electrode is disposed substantially at the center, and the linear electrode is formed radially therefrom. Thereby, the concentration of the linear electrodes in the central portion can be suppressed, and the occurrence of the sensitivity reduction region can be prevented.
- FIGS. 6E to 6H show examples in which an aggregate is formed by combining a plurality of linear electrodes formed in an annular shape or a rectangular shape. As a result, the density of the electrodes can be adjusted, and the formation of the sensitivity reduction region can be suppressed.
- FIGS. 6I to 6L show examples in which an aggregate is formed by combining a plurality of linear electrodes arranged in the X-axis direction or the Y-axis direction. By adjusting the shape, length, pitch, and the like of the linear electrode, a desired electrode density can be obtained.
- 6M to 6P are examples in which the line electrodes are arranged asymmetrically in the X-axis direction or the Y-axis direction.
- the electrode layer 14 has a detection region 14Ra, and the detection region 14Ra includes a plurality of detection units 40s.
- the plurality of detection units 40s are two-dimensionally arranged in a substantially matrix form in the detection region 14Ra.
- Each of the plurality of detection units 40s is formed in an intersecting region between the X electrode 41b and the Y electrode 42b.
- the detection unit 40 s detects a capacitance that changes according to the relative distance between the metal layer 11 and the conductor layer 16.
- the unit electrode bodies 41 m and 42 m have a square shape with the same size, and when the electrode layer 14 is viewed from the Z-axis direction, the unit electrode bodies 41 m and 42 m are completely
- the configuration of the unit electrode bodies 41m and 42m is not limited to this example. That is, when the electrode layer 14 is viewed from the Z-axis direction, part of the unit electrode bodies 41m and 42m may overlap, and the overlapping portion may constitute the detection unit 40s.
- the shape of the unit electrode bodies 41m and 42m for obtaining such a configuration for example, the following is preferable.
- the unit electrode body 41m has a rectangular shape having a long side parallel to the X-axis direction and a short side parallel to the Y-axis direction.
- the unit electrode body 42m has a rectangular shape having a long side parallel to the Y-axis direction and a short side parallel to the X-axis direction.
- adjacent unit electrode bodies 41 m are connected by one connecting portion 41 n and adjacent unit electrode bodies 42 m are connected by one connecting portion 42 n.
- the number of connecting parts 41n, 42n is not limited to this example. That is, the adjacent unit electrode bodies 41m may be connected by a plurality of connecting portions 41n, and the adjacent unit electrode bodies 42m may be connected by a plurality of connecting portions 42n.
- a detection unit 40s indicated by a solid line represents an actual detection unit.
- the detection unit 40si indicated by a broken line indicates a virtual detection unit.
- the center position of each detection unit 40s when each detection unit 40s is viewed from the Z-axis direction, that is, the reference position of the two-dimensional array is indicated by a broken line 40c.
- the virtual detectors 40si are two-dimensionally arranged in a matrix at regular intervals.
- the positions of the virtual detection units 40si that are two-dimensionally arranged at equal intervals in this way, that is, the virtual arrangement positions of the detection units 40s are referred to as “two-dimensional array reference positions”.
- the detection unit 40s on the peripheral side (outer periphery side) of the detection region 14Ra is provided at a position shifted toward the center of the detection region 14Ra from the reference position of the two-dimensional array at equal intervals. It has been.
- the reference position of the two-dimensional array of the detection unit 40s is assumed that the two-dimensional array pattern of the detection unit 40s at the center of the detection region 14Ra and the vicinity thereof continues to the peripheral side of the detection region 14Ra.
- the position of the two-dimensional array ie, the position of the virtual two-dimensional array.
- the arrangement position of the actual detection unit 40s is not shifted, so the arrangement position of the actual detection unit 40s and the virtual detection unit 40si are the same.
- the actual arrangement position of the detection unit 40s is shifted, so that there is a difference in the arrangement position between the actual detection unit 40s and the virtual detection unit 40si.
- numbers (i, j) are respectively assigned to a plurality of virtual detection units 40si that are two-dimensionally arranged in a matrix.
- a group of detection units 40s arranged in the X-axis direction is defined as a row
- a group of detection units 40s arranged in the Y-axis direction is defined as a column.
- the numbers i and j are the row number and the column number, respectively.
- each actual detection unit 40s is assigned the number (i, j) of each virtual detection unit 40si corresponding thereto.
- the actual arrangement of the detection unit 40s satisfies all of the following relationships (a) to (c).
- A) Each actual detection unit 40s is arranged so as not to exceed the position of each detection unit 40s arranged inside the detection unit 40s.
- Each actual detection unit 40s is arranged so as not to overlap with the detection unit 40s arranged inside one of the detection units 40s.
- the origin O of the X axis and the Y axis is set as the center position of the detection region 14Ra.
- the center position (X, Y) of the virtual detection unit 40si specified by the number (i, j) is represented as (X 0 i, j , Y 0 i, j ), and is specified by the number (i, j).
- the center position (X, Y) of the actual detection unit 40s is expressed as (X i, j , Y i, j ).
- the width in the X-axis direction of the detection unit 40s is represented as Dx
- the width in the Y-axis direction is represented as Dy (see FIG. 9B).
- the relation (A) is expressed by the following relational expressions (A-1-1) to (A-4-2).
- Each actual detection unit 40s having a number (i ⁇ 0, j ⁇ 0)
- the relation (B) is expressed by the following relational expressions (B-1-1) to (B-4-2).
- Each actual detection unit 40s having a number (i ⁇ 0, j ⁇ 0)
- Each actual detection unit 40s having a number (i ⁇ 0, j ⁇ 0)
- the relation (C) is expressed by the following relational expressions (C-1-1) to (C-4-2).
- Each actual detection unit 40s having a number (i ⁇ 0, j ⁇ 0)
- the actual position of the detection unit 40s becomes the position of the deformation peak. Therefore, the actual detection unit 40s outputs the maximum signal.
- the position of the virtual detection unit 40si is set as the position of the detection unit. For this reason, a signal indicating that a weight is applied to the position of the virtual detection unit 40si is output from the control unit 71.
- the detection region 14Ra has corners and sides, and the frame bodies 22 and 52 are provided so as to surround the detection region 14Ra.
- the shift distance of the detection unit 40s in the region near the center of the side is This is larger than the shift distance of the detection unit 40s in the region near the portion (see FIG. 8: regions R1 and R2).
- the shift distance of the detection unit 40s increases from the center of the detection region 14Ra in the direction of the periphery toward the periphery (see FIG. 8: regions R1 to R3).
- the detection region 14Ra has a long side and a short side, and frame bodies 22 and 52 are provided so as to surround the detection region 14Ra, and detection is performed in a region near the center of the long side and a region near the center of the short side. The shift distance of the part 40s is almost equal.
- Regions R2 and R3 See FIG. 8: Regions R2 and R3
- D The detection region 14Ra has a long side and a short side, the frame bodies 22 and 52 are provided so as to surround the detection region 14Ra, and the shift distance of each detection unit 40s included in the vicinity of the center of the long side is Approximately equal (see FIG. 8: region R2).
- a plurality of structures 21 may constitute a group associated with each virtual detection unit 40si.
- a plurality of structures 51 may constitute a group associated with each virtual detection unit 40si.
- the plurality of structures 21 and 51 constituting each of these groups may be arranged symmetrically with respect to the center of the virtual detection unit (intersection region) 40si. More specifically, the X and Y electrodes 41b and 42b may be arranged symmetrically with respect to the center line.
- each of the plurality of virtual detection units 40si may be arranged to face the structure 21 or a group formed by the structure 21 in the Z-axis direction.
- each of the plurality of virtual detection units 40si may be arranged to face the structure 51 or a group formed by the structure 51 in the Z-axis direction.
- FIG. 9A is a cross-sectional view for explaining an example of the configuration of the detection unit 40s.
- the detection unit 40s is a mutual capacitance capacitive element having an X electrode 41b, a Y electrode 42b facing the X electrode 41b, and a dielectric layer provided between the X and Y electrodes 41b and 42b.
- FIG. 9A shows an example in which the X and Y electrodes 41b and 42b are configured by a single electrode line.
- FIG. 9A shows an example in which the X electrode 41b i and the Y electrodes 42b i , 42b i + 1 , 42b i + 2 are arranged to face each other in the Z-axis direction.
- the X electrode element 41 and the Y electrode element 42 are joined to each other by the adhesive layer 43, and the base material 41a of the X electrode element 41 and the adhesive layer 43 constitute the dielectric layer.
- detection units 40s i , 40s i + 1 , 40s i + 2 are formed in the intersecting regions where the X electrode 41b i and the Y electrodes 42b i , 42b i + 1 , 42b i + 2 are capacitively coupled, These electrostatic capacitances C i , C i + 1 , C i + 2 are the capacitances of the metal layer 11 and the conductor layer 16 and the X electrode 41b i , Y electrode 42b i , 42b i + 1 , 42b i + 2 , respectively. It is configured to change depending on the coupling.
- the initial capacity of the detection unit 40s is set by, for example, the facing area between the X and Y electrodes 41b and 42b, the facing distance between the X and Y electrodes 41b and 42b, and the dielectric constant of the adhesive layer 43.
- the Y electrode element 42 is stacked so as to be an upper layer than the X electrode element 41 .
- the configuration of the electrode layer 14 is not limited thereto, and the X electrode element 41 is replaced with the Y electrode. You may laminate
- FIG. 10 shows an example of the arrangement positions of the structures 21 and 51 in the entire detection region 14Ra.
- FIG. 9B shows an example of the arrangement positions of the structures 21 and 51 in the center of the detection region 14Ra.
- the arrangement position of the structure 21 and the center of the detection unit 40s are substantially coincident.
- the detection unit 40s is provided at a position shifted toward the center from the reference position of the equally spaced two-dimensional array, and therefore the arrangement position of the structure 21 and the detection unit 40s. Off center.
- the arrangement of the structures 21 and 51 is in a line-symmetric relationship with the following straight lines Mx and My.
- Straight line Mx a straight line passing through the center of the virtual detection unit 40si and parallel to the X axis
- Straight line My a straight line passing through the center of the virtual detection unit 40si and parallel to the Y axis
- the detection region 14Ra The structures 21 and 51 arranged in the periphery and the vicinity thereof may be asymmetric with respect to the straight lines Mx and My.
- the structure 21 is arranged at the center of the virtual sensor 20si.
- the structure 51 is disposed at a virtual midpoint.
- the virtual midpoint means a midpoint of a straight line connecting the centers of the virtual sensors 20si and 20si adjacent to each other in an oblique direction with respect to the X axis or the Y axis.
- the pitches of the structures 21 in the X and Y axis directions are constant pitches Lx and Ly, respectively.
- the pitches of the structures 51 in the X and Y axis directions are also constant pitches Lx and Ly, respectively.
- FIG. 9B shows an example in which the structure 21 is arranged at the center of the virtual sensor 20si and the structure 51 is arranged at a virtual midpoint.
- the arrangement of the structures 21, 51 is described.
- the structure 51 may be disposed at the center of the virtual sensor 20si, and the structure 21 may be disposed at the virtual midpoint.
- 10 and 9B show an example in which the pitches Lx and Ly in the X and Y axis directions of the structure 21 and the pitches Lx and Ly in the X and Y axis directions of the structure 51 are the same.
- the pitches Lx and Ly of the structures 21 and 51 are not limited to this example.
- the pitches Lx and Ly of the structures 21 in the X and Y axis directions and the pitches of the structures 51 in the X and Y axis directions Lx and Ly may be different.
- 10 and 9B show an example in which the number of the structures 21 and 51 is substantially the same. However, the number of the structures 21 and 51 is not limited to this example. The number of 51 may be different.
- FIG. 11 is a cross-sectional view showing a state of force applied to the structures 21 and 51 when the point P on the first surface 2m is pressed downward in the Z-axis direction by the operating element 101.
- the white arrow in the figure schematically shows the magnitude of the force downward in the Z-axis direction (hereinafter simply referred to as “downward”).
- states such as bending of the metal layer 11 and the electrode layer 14 and elastic deformation of the structures 21 and 51 are not shown.
- the metal layer 11 immediately below the point P bends downward.
- the structures 21 i and 21 i + 1 adjacent to the space 23 i receive the force F1, and are elastically deformed in the Z-axis direction to slightly reduce the thickness.
- the structures 21 i-1 and 21 i + 2 adjacent to the structures 21 i and 21 i + 1 also receive a force F2 smaller than F1.
- force is also applied to the electrode layer 14 by the forces F1 and F2, and the electrode layer 14 bends downward about the region immediately below the structures 21 i and 21 i + 1 .
- the structure 51 i disposed between the structures 21 i and 21 i + 1 receives the force F3, elastically deforms in the Z-axis direction, and the thickness is slightly reduced.
- the structure 51 i-1 disposed between the structures 21 i-1 and 21 i and the structure 51 i + 1 disposed between the structures 21 i + 1 and 21 i + 2 are also F3. Receive a smaller F4.
- force can be transmitted in the thickness direction by the structures 21 and 51, and the electrode layer 14 can be easily deformed. Further, the metal layer 11 and the electrode layer 14 are bent and the influence of the pressing force is exerted in the in-plane direction (direction parallel to the X-axis direction and the Y-axis direction). A force can also be exerted on the neighboring structures 21 and 51.
- the metal layer 11 and the electrode layer 14 can be easily deformed by the space portions 23 and 53. Furthermore, the structures 21 and 51 formed of columns or the like can apply a high pressure to the electrode layer 14 with respect to the pressing force of the operation element 101, and the electrode layer 14 can be flexed efficiently.
- the structure 21 easily deflects the electrode layer 14 toward the conductor layer 16 through the space 53 below the structures 21 and 51. be able to.
- FIGS. 12 and 13 are cross-sectional views showing the state of the input device 100 when the first surface 2m is pressed by the operation element 101, and an example of the amount of change in capacitance of each detection unit 40s at that time.
- FIG. The bar graph shown along the X-axis in FIGS. 12 and 13 schematically shows the amount of change from the reference value of the capacitance in each detection unit 40s.
- FIG. 12 shows a state when the operation element 101 presses on the structure 21 (21 i + 1 )
- FIG. 13 shows a state where the operation element 101 presses on the space portion 23 (23 i + 1 ). Shows the situation.
- the structure 21 i + 1 immediately below the pressing position receives the most force, and the structure 21 i + 1 itself is elastically deformed and displaced downward. Due to the displacement, the detection unit 40s i + 1 immediately below the structure 21 i + 1 is displaced downward. Thereby, the detection unit 40s i + 1 and the conductor layer 16 come close to or in contact with each other through the space portion 53 i + 1 . That is, the detection unit 40s i + 1 obtains the change amount C i + 1 of the capacitance when the distance to the metal layer 11 slightly changes and the distance to the conductor layer 16 changes greatly.
- the structures 21 i and 21 i + 2 are also slightly displaced downward due to the influence of the bending of the metal layer 11, and the amount of change in capacitance in the detection units 40s i and 40s i + 2 is C. i , C i + 2 .
- C i + 1 is the largest, and C i and C i + 2 are substantially the same and smaller than C i + 1 . That is, as shown in FIG. 12, the capacitance variations C i , C i + 1 , and C i + 2 indicate a mountain-shaped distribution with C i + 1 at the apex.
- the control unit 71 calculates the center of gravity and the like based on the ratios of C i , C i + 1 , and C i + 2 and calculates the XY coordinates on the detection unit 40s i + 1 as the pressed position. May be.
- the structures 21 i + 1 and 21 i + 2 in the vicinity of the pressing position are slightly elastically deformed and displaced downward due to the bending of the metal layer 11.
- the detection unit 40s i + 1, 40s i + 2 immediately below structure 21 i + 1, 21 i + 2 is displaced downward.
- the detectors 40s i + 1 and 40s i + 2 and the conductor layer 16 come close to or in contact with each other through the space parts 53 i + 1 and 53 i + 2 .
- each of the detection units 40s i + 1 and 40s i + 2 has a slight change in the distance from the metal layer 11 and a relatively large change in the distance from the conductor layer 16, thereby changing the amount of change in capacitance.
- C i + 1 and C i + 2 are obtained.
- These change amounts C i + 1 and C i + 2 are substantially the same.
- the control unit 71 may calculate the XY coordinates between the detection units 40s i + 1 and 40s i + 2 as the pressed positions. .
- the electrostatic capacitance of the detection part 40s is changed.
- the amount of change can be made larger. As a result, it is possible to increase the detection sensitivity of the input operation.
- FIG. 14 is a block diagram illustrating an example of a configuration of an electric circuit of the input device 100 according to the first embodiment of the present technology.
- the input device 100 includes a sensor 1, a display 2, a control unit 71, and a controller 72.
- the control unit 71 detects the operation position based on the change in capacitance of each detection unit 40s.
- the setting position of each detection unit 40s in the control unit 71 is a reference position of a two-dimensional array. Specifically, it is the arrangement position of the virtual detector 40si shown in FIG.
- the control unit 71 includes a calculation unit 73 and a signal processing unit 74.
- the calculation unit 73 detects an operation by the user based on the change in the capacitance of the detection unit 40s.
- the signal processing unit 74 generates an operation signal based on the detection result by the calculation unit 73.
- the controller 72 performs processing based on the operation signal generated by the signal processing unit 74.
- the operation signal processed by the controller 72 is output to the display 2 as an image signal, for example.
- the display 2 is connected to a drive circuit mounted on the controller 72 via a flexible wiring board (not shown).
- the drive circuit may be mounted on a wiring board.
- 15A and 15B are diagrams for describing the detection principle of the input device 100 according to the first embodiment of the present technology.
- positions Xa, Xb, Xc, and Xd indicate reference positions of a two-dimensional array at equal intervals.
- the bar graph indicates an output signal output from the control unit 71 based on the amount of change in capacitance in each detection unit 40s. Further, the position of the bar graph on the X axis indicates the arrangement position of each detection unit 40s.
- the position of the detection unit 40s is not shifted, that is, the case where the arrangement position of the detection unit 40s is the reference position Xa, Xb, Xc, Xd will be described.
- the load position is Xc, but the deformation peak is at the position Xp.
- the control unit 71 outputs Xp as a detection position by calculating the center of gravity.
- the load position is Xc, but the deformation peak is the Xp position, and the detection unit 40s N + 2 at the Xp position is the maximum.
- a signal is output, and the load calculation is also performed at the position of the detection unit 40s N + 2 .
- the control unit 71 outputs Xc as the detection position.
- the detection unit 40s on the peripheral side of the detection region 14Ra has a detection region 14Ra of the reference region of the two-dimensional array at equal intervals. It is provided at a position shifted toward the center.
- the setting position of each detection unit 40s in the control unit 71 is set to the reference position of an equally spaced two-dimensional array. Therefore, the position shift of a load position and a deformation
- the operation member 3 has a display 3 including a glass substrate (for example, an organic EL display, a liquid crystal display, etc.), the effect of suppressing misalignment becomes significant. That is, the degree of improvement in detection accuracy of the input device 100 is large.
- a glass substrate for example, an organic EL display, a liquid crystal display, etc.
- the support layer 12 is provided between the metal layer 11 and the electrode layer 14 has been described (see FIG. 1).
- the metal layer 11 and the electrode layer 14 may be adjacent to each other.
- the structure 51 is arranged in the middle of the adjacent detection units 40s, but may be arranged in the center of the detection units 40s.
- Modification 2 In the first embodiment described above, the case where the detection unit 40s and the vicinity thereof are displaced downward by one structure 21 has been described as an example. However, as illustrated in FIGS. The vicinity thereof may be displaced by being pushed downward by two or more structures 21. By pushing downward by two or more structures 21 as described above, local deformation of the operation member 3 due to the arrangement of the structures 21 can be suppressed, and the accuracy of coordinate calculation can be improved. In addition, the weighted sensitivity of the input device 100 can be improved.
- the structure 21 is arranged in the vicinity of the center of the virtual sensor 20si and the structure 51 is arranged at a virtual midpoint.
- 51 is not limited to this.
- the structure 51 may be disposed near the center of the virtual sensor 20si, and the structure 21 may be disposed at a virtual midpoint. .
- the input device 100 includes a structure 21 f between the metal layer 11 and the electrode layer 14, and a structure 51 f between the conductor layer 16 and the electrode layer 14.
- the structure 21f is obtained by providing the structure 51 in the first embodiment between the metal layer 11 and the electrode layer 14, and other points (that is, the arrangement position, configuration, material, and formation in the in-plane direction)
- the method and the like are the same as those of the structure 51 in the first embodiment.
- the structure 51f is obtained by providing the structure 21 in the first embodiment between the conductor layer 16 and the electrode layer 14, and other points (that is, the arrangement position, configuration, material, and formation in the in-plane direction)
- the method and the like are the same as the structure 21 in the first embodiment.
- the X electrode 41b is provided with a plurality of unit electrode bodies 41m and connecting portions 41n
- the Y electrode 42b is described as an example having a plurality of unit electrode bodies 42m and connecting portions 42n. (See FIG. 5)
- the configuration of the X and Y electrodes 41b and 42b is not limited to this example.
- an elongated rectangular electrode having a substantially constant width is used as the X electrode 41b, and the Y electrode 42b is extended in the Y axis direction.
- An elongated rectangular electrode having a substantially constant width may be used. That is, the plurality of X electrodes 41b as a whole have a stripe shape extending in the X-axis direction, and the plurality of Y electrodes 42b as a whole extend in the Y-axis direction. You may have.
- the central portions of the plurality of X electrodes 41b arranged at both ends and in the vicinity thereof have a shape curved toward the center of the detection region 14Ra.
- the degree of curvature increases as the X electrode 41b is farther from the center of the detection region 14Ra.
- the center part of the plurality of Y electrodes 42b arranged at both ends and in the vicinity thereof has a shape curved toward the center of the detection region 14Ra. .
- the degree of the curvature increases as the Y electrode 42b is farther from the center of the detection region 14Ra.
- a plurality of detection units 40s are formed in the intersecting region of the plurality of X and Y electrodes 41b and 42b arranged in a stripe shape.
- the detection unit 40s on the peripheral side of the detection region 14Ra is more than the reference position of the two-dimensional array at equal intervals, as in the first embodiment described above. It is provided at a position shifted toward the center. If a state in which a plurality of X and Y electrodes 41b and 42b arranged in a stripe shape are arranged in a straight line at an equal interval without being curved is assumed, the tolerance region of the X and Y electrodes 41b and 42b in the virtual state is displayed. It can be considered that a virtual detection unit 40si is configured. Therefore, also in the fourth modification, it is possible to define “a reference position of a two-dimensional array” as in the first embodiment described above.
- the rectangular electrode When a rectangular electrode is employed as the X electrode 41b, the rectangular electrode may be composed of an electrode group including a group of a plurality of sub-electrodes (first electrode elements) 41w as shown in FIG. 20B. preferable.
- the rectangular electrode when a rectangular electrode is adopted as the Y electrode 42b, the rectangular electrode is constituted by an electrode group consisting of a group of a plurality of sub-electrodes (second electrode elements) 42w as shown in FIG. 20B. Preferably it is. This is because the difference in capacitance before and after the input operation such as pressing can be increased, and the operation sensitivity can be improved.
- the sub electrode 41w is a linear conductive member extending in the X-axis direction, for example.
- the sub electrode 42w is, for example, a linear conductive member that extends in the Y-axis direction.
- One of the X electrode 41b and the Y electrode 42b may have the electrode configuration in the first embodiment described above, and the other may have the electrode configuration in the fourth modification.
- At least the plurality of structures 21 on the peripheral side of the detection region 14Ra are provided at positions shifted toward the center of the detection region 14Ra from the reference position of the arrangement of the structures 21.
- at least the plurality of structures 51 on the peripheral side of the detection region 14Ra are provided at positions shifted toward the center of the detection region 14Ra from the reference position of the arrangement of the structures 51. .
- the reference position of the arrangement of the structures 21 and 51 is the arrangement position of the structures 21 and 51 in the first embodiment.
- the reference position of the arrangement of the structures 21 and 51 is a structure when it is assumed that the arrangement pattern of the structures 21 and 51 at or near the center of the sensor 1 continues to the peripheral side of the sensor 1.
- This is an arrangement position of the bodies 21 and 51 (that is, an arrangement position of the virtual structures 21 and 51). Since the arrangement positions of the actual structures 21 and 51 are not shifted at or near the center of the sensor 1, the arrangement positions of the actual structures 21 and 51 and the virtual structures 21 and 51 are the same. . On the other hand, since the arrangement positions of the actual structures 21 and 51 are shifted on the peripheral side of the sensor 1 or in the vicinity thereof, the arrangement positions of the actual structures 21 and 51 and the virtual structures 21 and 51 are the same. There is a difference.
- the arrangement of the structures 21 and 51 is, for example, in a line-symmetric relationship with the following straight lines Mx and My.
- Straight line Mx a straight line passing through the center of the detection unit 40s and parallel to the X axis
- Straight line My a straight line passing through the center of the detection unit 40si and parallel to the Y axis
- the structures 21 and 51 to be formed may be asymmetric with respect to the straight lines Mx and My.
- the arrangement of the structures 21 and 51 described above may be distorted according to the curvature of the X electrode 41b and the Y electrode 42b.
- the structure 21 is shifted to the center position of the shifted detection unit 40s, for example.
- the arrangement position of the structure 21 and the center of the detection unit 40s are substantially matched.
- FIGS. 22A and 22B a structure in which the structures 21 and 51 are shifted to the center of the detection region 14Ra may be employed.
- FIG. 24A is a cross-sectional view illustrating an example of the configuration of the input device according to the second embodiment of the present technology.
- 24B is an enlarged cross-sectional view illustrating a part of FIG. 24A.
- the second embodiment is different from the first embodiment in that the electrode layer 14 includes the electrode element 43A.
- the electrode element 43A includes a base material 41a and a plurality of X electrodes 41b and Y electrodes 42b provided on the same main surface of the base material 41a.
- the X electrode 41b includes an electrode line portion 41p, a plurality of unit electrode bodies 41m, and a plurality of connection portions 41z.
- the electrode wire portion 41p extends in the X-axis direction.
- the plurality of unit electrode bodies 41m are arranged at regular intervals in the X-axis direction.
- the electrode wire portion 41p and the unit electrode body 41m are arranged with a predetermined distance therebetween, and the two are connected by a connecting portion 41z. Note that a configuration in which the unit electrode body 41m is directly provided on the electrode line portion 41p may be employed by omitting the connection portion 41z.
- the unit electrode body 41m has a comb-like shape as a whole. Specifically, the unit electrode body 41m includes a plurality of sub-electrodes 41w and a coupling portion 41y. The plurality of sub-electrodes 41w extend in the Y-axis direction. Adjacent sub-electrodes 41w are separated by a predetermined distance. One end of the plurality of sub-electrodes 41w is connected to a coupling portion 41y that extends in the X-axis direction.
- the Y electrode 42b includes an electrode line portion 42p, a plurality of unit electrode bodies 42m, and a plurality of connection portions 42z.
- the electrode line portion 42p extends in the Y-axis direction.
- the plurality of unit electrode bodies 42m are arranged at regular intervals in the Y-axis direction.
- the electrode wire portion 42p and the unit electrode body 42m are arranged with a predetermined distance therebetween, and the two are connected by a connecting portion 42z.
- the unit electrode body 42m has a comb-teeth shape as a whole. Specifically, the unit electrode body 42m includes a plurality of sub-electrodes 42w and a coupling portion 42y. The plurality of sub-electrodes 42w extend in the Y-axis direction. The adjacent sub-electrodes 42w are separated for a predetermined period. One end of the plurality of sub-electrodes 42w is connected to a coupling portion 42y extending in the X-axis direction.
- the plurality of sub-electrodes 41w of the unit electrode body 41m and the plurality of sub-electrodes 42w of the unit electrode body 42m are alternately arranged in the X-axis direction.
- the sub-electrodes 41w and 42w are separated from each other for a predetermined period.
- an insulating layer 42r is provided on the electrode line portion 41p of the X electrode 41b.
- a jumper wiring 42q is provided so as to straddle the insulating layer 42r.
- the electrode wire portion 42p is connected by the jumper wiring 42q.
- FIGS. 24A and 24B the example in which the support layer 12 is provided between the metal layer 11 and the electrode layer 14 has been described (see FIGS. 24A and 24B).
- the support layer 12 may be omitted, and the metal layer 11 and the electrode layer 14 may be adjacent to each other.
- the structure 51 is disposed in the middle of the adjacent detection units 40s, but may be disposed in the center of the detection unit 40s.
- one unit electrode body of the X electrode 41b and the Y electrode 42b is configured by a sub electrode, whereas the other unit electrode body is a flat plate shape. It is comprised by the electrode of.
- the third embodiment is the same as the first embodiment in other points.
- the unit electrode body 41m of the X electrode 41b is composed of a flat electrode.
- the unit electrode body 42m of the Y electrode 42b is composed of a plurality of sub-electrodes 42w.
- the conductor layer 16 (see FIG. 1) facing the X electrode 41b via the support layer 15 is omitted as shown in FIG. 30A.
- a polymer resin layer 16a may be adopted instead of the conductor layer 16.
- the reason why the conductor layer 16 can be omitted in this manner is that the flat electrode (unit electrode body 41m) included in the X electrode 41b has a shielding effect against external noise (external electric field).
- the conductor layer 16 it is possible to provide a strong shielding effect and to make the detection unit 40s stable against external noise.
- the unit electrode body 41m of the X electrode 41b is composed of a plurality of sub-electrodes 41w.
- the unit electrode body 42m of the Y electrode 42b is constituted by a flat electrode.
- the metal layer 11 (see FIG. 1) facing the Y electrode 42b via the support layer 12 is omitted as shown in FIG. 30B. You may do it.
- the reason why the metal layer 11 can be omitted in this manner is that the flat electrode (unit electrode body 42m) included in the Y electrode 42b has a shielding effect against external noise (external electric field).
- the metal layer 11 it is possible to provide a strong shielding effect, and it is possible to provide a detection unit 40 s that is stable against external noise.
- the configuration of the X and Y electrodes 41b and 42b is not limited to this, and both the unit electrode body 41m of the X electrode 41b and the unit electrode body 42m of the Y electrode 42b are configured by flat electrodes. It may be.
- the example in which the support layer 12 is provided between the display 2 and the electrode layer 14 has been described (see FIG. 30B). However, as shown in FIG. It may be omitted and the display 2 and the electrode layer 14 may be adjacent to each other.
- one of the X electrode 41b and the Y electrode 42b is configured by a plurality of sub-electrodes, whereas the other is configured by one flat electrode. You may do it.
- the X electrode 41b is composed of a flat electrode, whereas the Y electrode 42b is composed of a plurality of sub-electrodes 42w.
- the conductor layer 16 (facing the X electrode 41b via the support layer 15) is provided as in the first configuration example of the third embodiment. 1) may be omitted, or the polymer resin layer 16a may be employed instead of the conductor layer 16.
- the X electrode 41b is composed of a plurality of sub-electrodes 41w, whereas the Y electrode 42b is composed of one flat electrode.
- the metal layer 11 which faces the Y electrode 42b via the support layer 12 (as in the second configuration example of the third embodiment). (See FIG. 1) may be omitted.
- the configuration of the X and Y electrodes 41b and 42b is not limited to this, and both the X electrode 41b and the Y electrode 42b may be configured by one flat electrode.
- the area of the detection unit 40s increases from the center of the detection region 14Ra toward the periphery.
- the “area of the detection unit 40 s” means the area of the detection unit 40 s when the electrode layer 14 is viewed from the Z-axis direction.
- the deformation amount of the detection unit 40s at the periphery of the detection region 14Ra is 1 ⁇ 2 of the deformation amount of the detection unit 40s at the center of the detection region 14Ra with the same weight, the electrostatic capacitance of the detection unit 40s at the periphery. It is preferable to double the amount of change in capacity.
- the fourth embodiment is the same as the first embodiment in other points.
- the configuration for suppressing the decrease in the amount of change in capacitance as it approaches the periphery is not limited to the above example, but one or more of the following configurations (a) to (d): May be adopted.
- C The height of at least one of the structures 21 and 51 decreases from the center of the detection region 14Ra toward the periphery.
- the dielectric constant of the detection unit 40s is changed from the center of the detection region 14Ra toward the periphery.
- the dielectric constant of the member between the Y electrode 42b and the metal layer 11 (for example, the support layer 12) or the member between the X electrode 41b and the conductor layer 16 is detected. It is good to make it high toward the peripheral direction from the center of area
- the dielectric constant of the member between the X and Y electrodes 41b and 42b and the metal layer 11 or the member between the X and Y electrodes 41b and 42b and the conductor layer 16 is determined as the detection region. It is good to make it low from the center of 14Ra toward the periphery.
- FIG. 34 is a cross-sectional view illustrating an example of the configuration of the input device 100A according to the fifth embodiment of the present technology.
- FIG. 35 is a plan view showing an example of the configuration of the electrode layer 14A of the input device 100A shown in FIG.
- the input device 100A according to the fifth embodiment is different from the input device 100 according to the first embodiment in that it includes an electrode layer 14A having four detection regions 14Ra 1 to 14Ra 4 .
- a frame arrangement region 14Rb is provided around each of the plurality of detection regions 14Ra 1 to 14Ra 4 .
- Frame bodies 22 and 52 are provided in the frame body arrangement region 14Rb.
- the configuration of the detection regions 14Ra 1 to 14Ra 4 is the same as that of the detection region 14Ra in the first embodiment described above. Therefore, the arrangement of the plurality of detection units 40s included in the detection regions 14Ra 1 to 14Ra 4 is the same as the arrangement of the plurality of detection units 40s in the detection region 14Ra in the first embodiment described above. In other words, among the plurality of detection units 40s, at least the detection region 14Ra 1 ⁇ each detecting portion 40s on the peripheral side of the 14Ra 4 (outer circumferential side), detect the reference position of the equally spaced two-dimensional array region 14Ra 1 ⁇ 14Ra It is provided at a position shifted toward the center of 4 .
- FIG. 36A is a perspective view illustrating an example of an appearance of an input device 100B according to the sixth embodiment of the present technology.
- the input device 100B according to the sixth embodiment has a cylindrical shape as a whole. Therefore, the first surface 2m that is the input operation surface has a cylindrical surface shape.
- FIG. 36B is a perspective view illustrating an example of the configuration of the electrode layer 14B of the input device 100B illustrated in FIG. 36A.
- the electrode layer 14B has a cylindrical shape like the input device 100B.
- the electrode layer 14B has a cylindrical detection region 14Ra, and annular frame arrangement regions 14Rb 1 and 14Rb 2 provided at both ends of the detection region 14a in the width direction.
- Frame 22 is provided on the surface of the outer peripheral surface of the frame arrangement region 14Rb 1, 14Rb 2
- the frame 52 is provided on the surface of the inner peripheral surface side of the frame arrangement region 14Rb 1, 14Rb 2.
- the electrode layer 14B includes a plurality of detection units 40s that are two-dimensionally arranged in the in-plane direction of the cylindrical detection region 14Ra.
- the virtual detection units 40si are also two-dimensionally arranged in the in-plane direction of the cylindrical detection region 14Ra, as in the actual detection unit 40s.
- FIG. 36B shows an example in which a plurality of detection units 40s are two-dimensionally arranged in the circumferential direction and the axial direction (height direction) of the cylindrical electrode layer 14B. Further, an example is also shown in which the virtual detection unit 40si is two-dimensionally arranged in the circumferential direction and the axial direction (height direction) of the cylindrical electrode layer 14B, similarly to the actual detection unit 40s.
- the detection unit 40 s on the peripheral side (outer peripheral side) of the detection region 14 Ra is shifted toward the inner side from the periphery of the detection region 14 Ra with respect to the reference position of the two-dimensional array at equal intervals. It is provided at the position.
- the direction from the periphery of the detection region 14Ra toward the inside is preferably the direction from the periphery of the detection region 14Ra toward the center line 14L and orthogonal to the extending direction of the center line 14L.
- the shift distance of the detection unit 40s increases as the distance from the center line 14L increases in a direction orthogonal to the extending direction of the center line 14L.
- the center line 14L refers to a virtual line extending in the circumferential direction of the cylindrical detection region 14Ra and dividing the cylindrical detection region 14Ra into two.
- the reference position of the two-dimensional array of the detection unit 40s is assumed to be virtual when the two-dimensional array pattern of the detection unit 40s in the center line 14L of the detection region 14Ra and its vicinity continues to the peripheral side of the detection region 14Ra. This is the position of the two-dimensional array (ie, the position of the virtual two-dimensional array).
- the actual arrangement position of the detection unit 40s is not shifted, so the arrangement position of the actual detection unit 40s and the virtual detection unit 40si is the same.
- the actual arrangement position of the detection unit 40s is shifted, so that there is a difference in the arrangement position between the actual detection unit 40s and the virtual detection unit 40si.
- FIG. 36C is a perspective view illustrating an example of a configuration of an input device 100C according to a modification of the sixth embodiment of the present technology.
- the detection region 14Ra may have a C shape when viewed from the axial direction. That is, the detection region 14Ra may have a shape obtained by curving a rectangle into a cylindrical shape. Between the two sides opposite to each other in the circumferential direction of the detection region 14Ra, an elongated frame arrangement region 14Rb 3 extending in the axial direction is provided.
- the frame arrangement region 14Rb 3 is the frame body arrangement region 14Rb 1. , and it is connected to the 14Rb 2.
- the shift direction of the detection unit 40s is the direction from the periphery to the center of the detection area 14Ra. It is preferable.
- FIG. 37A is a plan view illustrating an example of an appearance of an input device 100C according to the seventh embodiment.
- the input device 100C according to the seventh embodiment has an irregular plate shape as a whole. That is, the first surface 2m that is an input operation surface has an indefinite shape.
- FIG. 37B is a perspective view showing an example of the configuration of the electrode layer 14C of the input device 100B shown in FIG. 37A.
- the plurality of detection units 40s at least the detection unit 40s on the peripheral side (outer peripheral side) of the detection region 14Ra is shifted to a position that is shifted inward from the periphery of the detection region 14Ra with respect to the reference position of the two-dimensional array. Is provided. From the viewpoint of suppressing the displacement between the load position and the deformation peak, it is preferable that the shift distance of the detection unit 40s increases as the distance from the center increases from the center of the detection region 14Ra toward the periphery.
- the virtual detection units 40si may be two-dimensionally arranged in a matrix at regular intervals, but are arranged at intervals that take into account that the detection regions 14Ra have an indefinite shape. Preferably it is.
- FIG. 38 is a cross-sectional view illustrating an example of the configuration of the input device 100D according to the eighth embodiment of the present technology.
- the input device 100D according to the eighth embodiment is the same as the first embodiment except that it includes the operation member 3a, and the description thereof is omitted as appropriate.
- An input device 100 ⁇ / b> D includes a flexible sheet 4 instead of the display 2.
- a plurality of key areas 4a are disposed on the flexible sheet 4 as will be described later, and the input device 100D is used as a keyboard device as a whole.
- the flexible sheet 4 is made of an insulating plastic sheet having flexibility such as PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PMMA (polymethyl methacrylate), PC (polycarbonate), PI (polyimide), and the like.
- the thickness of the flexible sheet 4 is not particularly limited and is, for example, 0.1 mm to 1 mm.
- the flexible sheet 4 is not limited to a single-layer structure, and may have a configuration in which two or more sheets are laminated.
- an insulating plastic sheet having flexibility such as PET, PEN, PMMA, PC, and PI may be laminated as a base material.
- the flexible sheet 4 has a first surface 4m as an operation surface and a second surface 4n opposite to the first surface 4m. A plurality of key areas 4a are arranged on the first surface 4m. On the other hand, the metal layer 11 may be laminated on the second surface 4n.
- the flexible sheet 4 and the metal layer 11 may be formed of a composite sheet or the like in which a metal foil is previously attached to the surface of the resin sheet, or may be a vapor deposition film or a sputtered film formed on the second surface 4n surface. It may be configured. Alternatively, it may be a coating film such as a conductive paste printed on the second surface 4n.
- Each key area 4a corresponds to a key top pressed by the user, and has a shape and a size corresponding to the type of key.
- Each key area 4a may be provided with an appropriate key display.
- the key display may display a key type or display the position (outline) of each key. It is also possible to display both of them.
- an appropriate printing method such as screen printing, flexographic printing, gravure printing, or the like can be employed.
- the first surface 4m has a form in which a groove 4b is formed around the key region 4a.
- Appropriate processing techniques such as press molding, etching, and laser processing can be employed to form the uneven surface corresponding to the key region 4a.
- the flexible sheet 4 having an uneven surface may be formed by a molding technique such as injection molding.
- FIG. 39A and FIG. 39B are diagrams schematically illustrating modifications of the flexible sheet 4.
- the flexible sheet 4 shown in FIG. 39A shows an example in which the first surface 4m is a flat surface.
- each key area (not shown) may be described by printing or the like, or may be used as a touch sensor without the key area.
- the flexible sheet 4 shown in FIG. 39B is formed by press-molding the flexible sheet 4 or the like, and each key region 4a is configured to be independently deformable in the vertical direction (sheet thickness direction).
- the flexible sheet 4 may be made of a conductive material such as metal. Thereby, the metal layer 11 becomes unnecessary and the operation member 3 can be thinned. In this case, the flexible sheet 4 also has a function as the metal layer 11 and is connected to a ground potential, for example.
- the structures 21 and 51 and the detection unit 40s can be arranged as follows.
- the structure 51 of the support layer 15 may be disposed below the groove 4b.
- the detection unit 40s is disposed at a position overlapping the structure 21 when viewed from the Z-axis direction.
- the control unit 71 includes the calculation unit 73 and the signal processing unit 74 as described above, and is electrically connected to the electrode layer 14. Moreover, in this embodiment, the control part 71 is comprised so that the signal according to input operation with respect to each of several key area
- the calculation unit 73 calculates the operation position in the XY coordinate system on the first surface 4m based on the electrical signals (input signals) output from the X and Y electrodes 41b and 42b of the electrode layer 14, respectively.
- the key area 4a assigned to the operation position is determined.
- the signal processing unit 74 generates an operation signal corresponding to the key area 4a where the press is detected.
- the input device 100D can be applied as a keyboard device as described above by being incorporated in an electronic device such as a notebook personal computer or a mobile phone.
- the input device 100D includes a communication unit (not shown) so that the input device 100D is electrically connected to another electronic device such as a personal computer by wire or wirelessly and can perform an input operation for controlling the electronic device. May be.
- the input device 100D can also be used as a pointing device. That is, two or more threshold values are set for the output of each detection unit 40s, and the calculation unit 73 determines a touch operation and a push operation, whereby an input device that serves as a pointing device and a keyboard can be obtained. is there.
- An electronic apparatus includes any of the input devices 100, 100A, 100B, and 100C according to the first to eighth embodiments and their modifications in the display unit.
- An example of an electronic device according to the ninth embodiment of the present technology will be described below.
- FIG. 40A is an external view illustrating an example of a mobile phone as an electronic apparatus.
- the mobile phone 211 is a so-called smartphone and includes a housing 212 and a display element 213 with a touch panel housed in the housing 212.
- the display element with a touch panel 213 is any one of the input devices 100 according to the first to seventh embodiments and modifications thereof.
- FIG. 40B is an external view illustrating an example of a tablet computer as an electronic device.
- the tablet computer 221 includes a housing 222 and a display element 223 with a touch panel housed in the housing 222.
- the display element with a touch panel 223 is any one of the input devices 100 according to the first to seventh embodiments and their modifications.
- the tablet computer 221 may be capable of inputting information using a pointing device such as the stylus 224.
- FIG. 41A is an external view showing an example of a touch panel display as an electronic device.
- the touch panel display 231 includes a housing 232 and a display element 233 with a touch panel housed in the housing 232.
- the display element with a touch panel 223 is any one of the input devices 100 according to the first to seventh embodiments and their modifications.
- FIG. 41B is an external view showing an example of a notebook personal computer as an electronic apparatus.
- the notebook personal computer 241 includes a computer main body 242 and a display 243.
- the computer main body 242 includes a housing 251, a keyboard 252 and a touch pad 253 housed in the housing 251.
- the keyboard 252 is the input device 100 according to the eighth embodiment or a modification thereof.
- the touch pad 253 is the input device 100 according to a modified example of the eighth embodiment.
- the display 243 includes a housing 261 and a display element 262 with a touch panel housed in the housing 261.
- the display element 262 with a touch panel is any one of the input devices 100 according to the first to seventh embodiments and their modifications. [Test example]
- FIG. 42A is a cross-sectional view showing the simulation conditions according to the test example.
- FIG. 42B is a plan view showing the simulation conditions according to the test example.
- an input device in which a conductive layer, a support layer, an electrode layer, a metal layer, and a display were stacked in this order was set.
- the support layer was configured by two-dimensionally arranging a plurality of structures.
- the electrode layer includes a plurality of sensors that are two-dimensionally arranged at equal intervals in the in-plane direction of the electrode layer. Note that the conductive layer, the support layer, the electrode layer, the metal layer, and the edge of the display were fixed.
- Input operation surface of the input device rectangular shape, size 65 mm ⁇ 120 mm
- Electrode layer thickness 0.3mm
- Display Thickness 0.3 mm
- Young's modulus 80 GPa Young's modulus assuming a glass substrate
- Structure Cylindrical, diameter 0.2mm
- 5MPa Sensor Matrix arrangement (11 x 19 [pieces])
- the deformation of the cross section of the input device is broad in specific gravity and spreads almost over the entire surface of the display.
- the direction of the shift of the deformation peak is a direction from the periphery of the input operation surface toward the center.
- the present technology can also employ the following configurations.
- the detection area has corners and sides, The sensor according to (1), wherein a shift distance of the detection unit in a region near the center of the side portion is larger than a shift distance of the detection unit in a region near the corner.
- the detection area has a long side and a short side, The sensor according to any one of (1) to (3), wherein a shift distance of the detection unit in a region near the center of the long side and a region near the center of the short side is substantially equal.
- the detection area has a long side and a short side, The sensor according to any one of (1) to (4), wherein a shift distance of the detection unit in a region near the center of the long side is substantially equal.
- at least the structure on the peripheral side of the detection region is provided at a position shifted from the reference position of the structure array toward the inside from the periphery of the detection region.
- the plurality of structures are provided in the detection region, The sensor according to any one of (1) to (8), further including a peripheral structure that is provided at a peripheral edge of the detection region and separates the conductor layer and the detection layer.
- the detection layer includes a plurality of first electrodes and a plurality of second electrodes intersecting with the plurality of first electrodes, The sensor according to any one of (1) to (11), wherein each of the plurality of detection units is provided at an intersection of the plurality of first electrodes and the plurality of second electrodes.
- the first electrode is a flat electrode
- the second electrode includes a plurality of sub-electrodes
- At least a first structure on the peripheral side of the detection region is directed from the periphery of the detection region toward the inner side with respect to the reference position of the arrangement of the first structures.
- the second structure on the peripheral side of the detection region is directed from the periphery of the detection region to the inner side with respect to the reference position of the arrangement of the second structures.
- An operation unit A conductor layer provided on the surface or inside of the operation section; A detection layer having a detection region and including a plurality of detection units arranged two-dimensionally in the detection region; A plurality of structures separating the conductor layer and the detection layer, Among the plurality of detection units, at least the detection unit on the peripheral side of the detection region is provided at a position shifted from the reference region of the two-dimensional array toward the inner side from the peripheral region of the detection region. apparatus.
- An operation unit A first conductor layer provided on the surface or inside of the operation section; A second conductor layer; A detection layer that is provided between the first conductor layer and the second conductor layer, includes a detection region, and includes a plurality of detection units arranged two-dimensionally in the detection region; A plurality of first structures separating the first conductor layer and the detection layer; A plurality of second structures that separate the detection layer and the second conductor layer; Among the plurality of detection units, at least the detection unit on the peripheral side of the detection region is provided at a position shifted from the reference region of the two-dimensional array toward the inner side from the peripheral region of the detection region. apparatus.
- An operation unit A conductor layer provided on the surface or inside of the operation section; A detection layer having a detection region and including a plurality of detection units arranged two-dimensionally in the detection region; A plurality of structures separating the conductor layer and the detection layer, Among the plurality of detection units, at least the detection unit on the peripheral side of the detection region is provided at a position shifted from the reference position of the two-dimensional array toward the inner side from the periphery of the detection region. machine.
- An operation unit A first conductor layer provided on the surface or inside of the operation section; A second conductor layer; A detection layer that is provided between the first conductor layer and the second conductor layer, includes a detection region, and includes a plurality of detection units arranged two-dimensionally in the detection region; A plurality of first structures separating the first conductor layer and the detection layer; A plurality of second structures that separate the detection layer and the second conductor layer; Among the plurality of detection units, at least the detection unit on the peripheral side of the detection region is provided at a position shifted from the reference position of the two-dimensional array toward the inner side from the periphery of the detection region. machine.
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Abstract
Description
第1の技術は、
導体層と、
検出領域を有し、該検出領域に2次元配列された複数の検出部を含む検出層と、
導体層および検出層を離間する複数の構造体と
を備え、
複数の検出部のうち、少なくとも検出領域の周縁側にある検出部は、2次元配列の基準位置よりも検出領域の周縁から内側の方向に向かってシフトした位置に設けられているセンサである。
第1の導体層と、
第2の導体層と、
第1の導体層および第2の導体層の間に設けられているとともに、検出領域を有し、該検出領域に2次元配列された複数の検出部を含む検出層と、
第1の導体層および検出層を離間する複数の第1の構造体と、
検出層および第2の導体層を離間する複数の第2の構造体と
を備え、
複数の検出部のうち、少なくとも検出領域の周縁側にある検出部は、2次元配列の基準位置よりも検出領域の周縁から内側の方向に向かってシフトした位置に設けられているセンサである。
操作部と、
操作部の表面または内部に設けられている導体層と、
検出領域を有し、該検出領域に2次元配列された複数の検出部を含む検出層と、
導体層および検出層を離間する複数の構造体と
を備え、
複数の検出部のうち、少なくとも検出領域の周縁側にある検出部は、2次元配列の基準位置よりも検出領域の周縁から内側の方向に向かってシフトした位置に設けられている入力装置である。
操作部と、
操作部の表面または内部に設けられている第1の導体層と、
第2の導体層と、
第1の導体層および第2の導体層の間に設けられているとともに、検出領域を有し、該検出領域に2次元配列された複数の検出部を含む検出層と、
第1の導体層および検出層を離間する複数の第1の構造体と、
検出層および第2の導体層を離間する複数の第2の構造体と
を備え、
複数の検出部のうち、少なくとも検出領域の周縁側にある検出部は、2次元配列の基準位置よりも検出領域の周縁から内側の方向に向かってシフトした位置に設けられている入力装置である。
操作部と、
操作部の表面または内部に設けられている導体層と、
検出領域を有し、該検出領域に2次元配列された複数の検出部を含む検出層と、
導体層および検出層を離間する複数の構造体と
を備え、
複数の検出部のうち、少なくとも検出領域の周縁側にある検出部は、2次元配列の基準位置よりも検出領域の周縁から内側の方向に向かってシフトした位置に設けられている電子機器である。
操作部と、
操作部の表面または内部に設けられている第1の導体層と、
第2の導体層と、
第1の導体層および第2の導体層の間に設けられているとともに、検出領域を有し、該検出領域に2次元配列された複数の検出部を含む検出層と、
第1の導体層および検出層を離間する複数の第1の構造体と、
検出層および第2の導体層を離間する複数の第2の構造体と
を備え、
複数の検出部のうち、少なくとも検出領域の周縁側にある検出部は、2次元配列の基準位置よりも検出領域の周縁から内側の方向に向かってシフトした位置に設けられている電子機器である。
1 第1の実施形態(X、Y電極がそれぞれ異なる面に設けられた入力装置の例)
2 第2の実施形態(X、Y電極が同一面に設けられた入力装置の例)
3 第3の実施形態(異なる種類のX、Y電極(単位電極体)を組合せた入力装置の例)
4 第4の実施形態(検出領域の中心から周縁の方向に向かって、検出部の大きさが大きくなる入力装置の例)
5 第5の実施形態(複数の検出領域を有する入力装置の例)
6 第6の実施形態(円筒形状を有する入力装置の例)
5 第6の実施形態(不定形状を有する入力装置の例)
7 第7の実施形態(フレキシブルシートを備えた入力装置の例)
8 第8の実施形態(電子機器の例)
[1.1 入力装置の構成]
図1は、本技術の第1の実施形態に係る入力装置100の構成の一例を示す断面図である。図2は、図1の一部を拡大して表す断面図である。図3は、本技術の第1の実施形態に係る入力装置100の構成の一例を示す分解斜視図である。入力装置100は、ユーザによる操作を受け付けるフレキシブルディスプレイ(表示部)2と、ユーザの操作を検出するセンサ1とを有する。入力装置100は、例えばタッチパネルディスプレイとして構成され、後述する電子機器に組み込まれる。なお、本明細書において、X軸およびY軸は、センサ1の主面内において互いに直交する軸を示し、Z軸は、X軸およびY軸に直交する軸(センサ1の厚さ方向と平行な軸)を示している。センサ1およびディスプレイ2は、Z軸に垂直な方向に延びる平板状である。
ディスプレイ2は、例えば、ガラス基板を含むディスプレイ、フィルムディスプレイ、フレキシブルディスプレイである。ディスプレイ2としてガラス基板を含むものを用いた場合に、本実施形態に係る効果は特に顕著である。ディスプレイ2の具体的な構成は特に限定されるものではない。ディスプレイ2としては、例えば、電子ペーパー、有機EL(エレクトロルミネセンス)ディスプレイ、無機ELディスプレイ、液晶ディスプレイなどを用いることができるが、これに限定されるものではない。また、ディスプレイ2の厚みは、例えば0.1mm~1mmの範囲であるが、この範囲に限定されるものではない。ディスプレイ2のヤング率は、例えば70GPa以上250GPa以下の範囲であるが、この範囲に限定されるものではない。
ディスプレイ2は、入力装置100の操作部材3の一部として構成される。操作部材3は、第1の面2mと第2の面2nとを有するディスプレイ2と、金属層11との積層構造を有する。すなわち、操作部材3は、ユーザによる操作を受け付ける第1の面2mと、金属層11が形成された第2の面2nとを有し、変形可能なシート状に構成される。
以下、センサ1の構成の一例について説明する。センサ1は、金属層(第1の導体層)11と、支持層(第1の支持層)12と、接着層13と、電極層(検出層)14と、支持層(第2の支持層)15と、導体層(第2の導体層)16とを備える。
金属層11は、可撓性を有している。このため、金属層11は、ディスプレイ2の変形に倣って変形可能である。金属層11は、例えば、シート状、箔状またはメッシュ状を有している。金属層11は、例えば、Cu(銅)、Al(アルミニウム)、ステンレス鋼(SUS)などの金属を主成分として含んでいる。金属層11の厚みは、例えば数10nm~数10μmであるが、この範囲に限定されるものではない。金属層11は、例えばグランド電位に接続される。
接着層13は、例えば、絶縁性を有する接着剤または粘着テープにより構成される。接着剤としては、例えば、アクリル系接着剤、シリコーン系接着剤およびウレタン系接着剤などからなる群より選ばれる1種以上を用いることができる。本技術において、粘着(pressure sensitive adhesion)は接着(adhesion)の一種と定義する。この定義に従えば、粘着層は接着層の一種と見なされる。
導体層16は、センサ1の最下部を構成し、金属層11とZ軸方向に対向して配置される。導体層16は、例えば、金属層11および電極層14などよりも高い曲げ剛性を有し、入力装置100の支持プレートとして機能する。導体層16としては、例えばAl合金またはMg(マグネシウム)合金などの金属材料を含む金属板、またはカーボン繊維強化型プラスチックなどの導体板、プラスチック材料などを含む絶縁体層上に、メッキ膜、蒸着膜、スパッタリング膜または金属箔などの導電層を形成した積層体を用いることができる。導体層16の厚みは、例えば約0.3mm程度であるが、この厚みに特に限定されるものではない。導体層16は、例えばグランド電位に接続される。
支持層12は、複数の構造体21と、枠体(周縁構造体)22とを備える。複数の構造体21および枠体22は、金属層11と電極層14との間に設けられ、金属層11と電極層14との間を離間する。複数の構造体21は、金属層11または導体層16の一主面(XY面)に二次元的に所定間隔で配列され、各構造体21間には空間部23が設けられている。
支持層15は、複数の構造体51と、枠体(周縁構造体)52とを備える。複数の構造体51および枠体52は、電極層14と導体層16との間に設けられ、電極層14と導体層16との間を離間する。複数の構造体51は、電極層14または導体層16の一主面に所定間隔で二次元的に配列され、各構造体51間には空間部53が設けられている。構造体51と枠体52との間にも空間部53が設けられている。構造体51は、Z軸方向から入力装置100を見ると、隣り合う構造体21間に配置されている。
電極層14は、可撓性を有し、操作子などによる第1の面2mの押圧に応じて変形可能に構成されている。電極層14は、金属層11と導体層16との間に設けられ、金属層11および導体層16各々との距離の変化を静電的に検出することが可能である。
接着層43は、上述の接着層13と同様である。
X電極素子41は、例えば、基材41aと、複数のX電極41bとを備える。複数のX電極41bは、例えば、基材41aの一方の主面に設けられている。Y電極素子42は、基材42aと、複数のY電極42bとを備える。複数のY電極42bは、例えば、基材42aの一方の主面に設けられている。複数のX電極41bと複数のY電極42bとは、Z軸方向から見ると、直交交差する関係にある。
基材41a、42aは、可撓性を有するシートである。基材41a、42aの材料としては、絶縁性および可撓性を有する材料を用いることができる。このような材料としては、例えば、ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)、ポリカーボネート(PC)、アクリル樹脂(PMMA)ポリイミド(PI)、トリアセチルセルロース(TAC)、ポリエステル、ポリアミド(PA)、アラミド、ポリエチレン(PE)、ポリアクリレート、ポリエーテルスルフォン、ポリスルフォン、ポリプロピレン(PP)、ジアセチルセルロース、ポリ塩化ビニル、エポキシ樹脂、尿素樹脂、ウレタン樹脂、メラミン樹脂、環状オレフィンポリマー(COP)、ノルボルネン系熱可塑性樹脂などが挙げられる。基材41a、42aの厚みは、例えば数10μm~数100μmであるが、この範囲に限定されるものではない。
図4Aは、X電極素子41の構成の一例を示す平面図である。複数のX電極41bは、Z軸方向から見ると、X軸方向にほぼ直線的に延在され、かつ、Y軸方向に所定の間隔離して配列されている。複数のX電極41bはそれぞれ、引き出し線などにより基材41aの周縁部に引き出されて、複数のX電極端子(図示せず)にそれぞれ電気的に接続される。そして、これらのX電極端子を介して、複数のX電極41bは、制御部71に電気的に接続される。
図7に示すように、電極層14は、検出領域14Raを有し、この検出領域14Raに複数の検出部40sを含んでいる。複数の検出部40sは、検出領域14Raにおいて、ほぼマトリックス状に2次元配列されている。複数の検出部40sはそれぞれ、X電極41bとY電極42bとの交差領域に形成されている。検出部40sは、金属層11および導体層16各々との相対距離に応じて変化する静電容量を検出する。
(A)現実の各検出部40sは、その1つ内側に配置された各検出部40sの位置を超えないように配置されている。
(B)X軸方向およびY軸方向に隣り合う2つの検出部40sのうち、外側に位置する検出部40sのシフト距離は、内側に位置する検出部40sのシフト距離以上である。
(C)現実の各検出部40sは、その1つ内側に配置された検出部40sとは重ならないように配置されている。
・番号(i≧0、j≧0)を有する現実の各検出部40s
|Xi+1,j|>|Xi,j| ・・・(A-1-1)
|Yi,j+1|>|Yi,j| ・・・(A-1-2)
・番号(i≦0、j≧0)を有する現実の各検出部40s
|Xi-1,j|>|Xi,j| ・・・(A-2-1)
|Yi,j+1|>|Yi,j| ・・・(A-2-2)
・番号(i≧0、j≦0)を有する現実の各検出部40s
|Xi+1,j|>|Xi,j| ・・・(A-3-1)
|Yi,j-1|>|Yi,j| ・・・(A-3-2)
・番号(i≦0、j≦0)を有する現実の各検出部40s
|Xi-1,j|>|Xi,j| ・・・(A-4-1)
|Yi,j-1|>|Yi,j| ・・・(A-4-2)
・番号(i≧0、j≧0)を有する現実の各検出部40s
|Xi+1,j-X0 i+1,j|≧|Xi,j-X0 i,j| ・・・(B-1-1)
|Yi,j+1-Y0 i,j+1|≧|Yi,j-Y0 i,j| ・・・(B-1-2)
・番号(i≦0、j≧0)を有する現実の各検出部40s
|Xi-1,j-X0 i-1,j|≧|Xi,j-X0 i,j| ・・・(B-2-1)
|Yi,j+1-Y0 i,j+1|≧|Yi,j-Y0 i,j| ・・・(B-2-2)
・番号(i≧0、j≦0)を有する現実の各検出部40s
|Xi+1,j-X0 i+1,j|≧|Xi,j-X0 i,j| ・・・(B-3-1)
|Yi,j-1-Y0 i,j-1|≧|Yi,j-Y0 i,j| ・・・(B-3-2)
・番号(i≦0、j≦0)を有する現実の各検出部40s
|Xi-1,j-X0 i-1,j|≧|Xi,j-X0 i,j| ・・・(B-4-1)
|Yi,j-1-Y0 i,j-1|≧|Yi,j-Y0 i,j| ・・・(B-4-2)
・番号(i≧0、j≧0)を有する現実の各検出部40s
|Xi+1,j-Xi,j| >Dx・・・(C-1-1)
|Yi,j+1-Yi,j| >Dy・・・(C-1-3)
・番号(i≦0、j≧0)を有する現実の各検出部40s
|Xi-1,j-Xi,j| >Dx・・・(C-2-1)
|Yi,j+1-Yi,j| >Dy・・・(C-2-2)
・番号(i≧0、j≦0)を有する現実の各検出部40s
|Xi+1,j-Xi,j| >Dx・・・(C-3-1)
|Yi,j-1-Yi,j| >Dy・・・(C-3-2)
・番号(i≦0、j≦0)を有する現実の各検出部40s
|Xi-1,j-Xi,j| >Dx・・・(C-4-1)
|Yi,j-1-Yi,j| >Dy・・・(C-4-2)
(A)検出領域14Raが角部および辺部を有し、この検出領域14Raを取り囲むように枠体22、52が設けられ、辺部の中央近傍の領域における検出部40sのシフト距離は、角部の近傍の領域における検出部40sのシフト距離に比べて大きい(図8:領域R1、R2参照)。
(B)検出領域14Raの中心から周縁の方向に向かって当該中心から離れるに従って、検出部40sのシフト距離が大きくなる(図8:領域R1~R3参照)。
(C)検出領域14Raが長辺と短辺を有し、この検出領域14Raを取り囲むように枠体22、52が設けられ、長辺の中央近傍の領域および短辺の中央近傍の領域における検出部40sのシフト距離が、ほぼ等しい。(図8:領域R2、R3参照)
(D)検出領域14Raが長辺と短辺を有し、この検出領域14Raを取り囲むように枠体22、52が設けられ、長辺の中央近傍に含まれる各検出部40sのシフト距離が、ほぼ等しい(図8:領域R2参照)。
図10は、検出領域14Raの全体における構造体21、51の配置位置の一例を示す。図9Bは、検出領域14Raの中央部における構造体21、51の配置位置の一例を示す。検出領域14Raの中央部では、構造体21の配置位置と検出部40sの中心とがほぼ一致している。一方、検出領域14Raの周縁部では、検出部40sは等間隔の2次元配列の基準位置よりも中心に向けてシフトした位置に設けられているので、構造体21の配置位置と検出部40sの中心とはずれている。
直線Mx:仮想的な検出部40siの中心を通り、かつ、X軸と平行な直線
直線My:仮想的な検出部40siの中心を通り、かつ、Y軸と平行な直線
但し、検出領域14Raの周縁およびその近傍に配置される構造体21、51は、直線Mx、Myに対して非対称であってもよい。
以下、図11~図13を参照して、入力装置100の中央部(すなわち検出部40sに位置シフトが殆どない領域)に位置する検出部40sを例として、センサ1の検出動作について説明する。
図12、図13は、第1の面2mが操作子101により押圧されたたときの入力装置100の状態を示す断面図と、そのときの各検出部40sの静電容量変化量の一例を示す図である。図12、図13におけるX軸に沿って示す棒グラフは、各検出部40sにおける静電容量の基準値からの変化量を模式的に示している。また、図12は、操作子101が構造体21(21i+1)上を押圧した際の状態を示し、図13は、操作子101が空間部23(23i+1)上を押圧した際の状態を示す。
図14は、本技術の第1の実施形態に係る入力装置100の電気回路の構成の一例を示すブロック図である。図14に示すように、入力装置100は、センサ1と、ディスプレイ2と、制御部71と、コントローラ72とを備える。
図15A、図15Bは、本技術の第1の実施形態に係る入力装置100の検出原理について説明するための図である。図15A、図15Bにおいて、位置Xa、Xb、Xc、Xdは、等間隔の2次元配列の基準位置を示している。また、棒グラフは、各検出部40sにおける静電容量の変化量に基づき、制御部71から出力される出力信号を示している。また、X軸上における棒グラフの位置は、各検出部40sの配置位置を示している。
第1の実施形態では、検出領域14Raに含まれる複数の検出部40sのうち、少なくとも検出領域14Raの周縁側にある検出部40sは、等間隔の2次元配列の基準位置よりも検出領域14Raの中心に向けてシフトした位置に設けられている。また、制御部71における各検出部40sの設定位置を、等間隔の2次元配列の基準位置に設定している。これにより、荷重位置と変形ピークとの位置ずれを抑制することができる。したがって、入力装置100の検出精度を向上することができる。
(変形例1)
上述の第1の実施形態では、電極層14と導体層16との間に支持層15が設けられた例について説明したが(図1参照)、図16Aに示すように、支持層15を省略して、電極層14と導体層16とが隣接するようにしてもよい。図16Aでは、構造体21は、検出部40sの中央に配置されているが、隣り合う検出部40sの中間に配置されていても良い。
上述の第1の実施形態では、検出部40sおよびその近傍を1つの構造体21により下方へと押して変位させる場合を例として説明したが、図17、図18に示すように、検出部40sおよびその近傍を2つ以上の構造体21により下方へと押して変位させるようにしてもよい。このように2つ以上の構造体21により下方へと押すことで、構造体21の配置に起因する操作部材3の局所的な変形を抑制し、座標計算の精度を改善できる。また、入力装置100の加重感度を向上することができる。
第1の実施形態における構造体21、51の互いの層間の配置位置(金属層11と電極層14との間の配置位置、および導体層16と電極層14との間の配置位置)を入れ替えてもよい。以下に、このような入れ替えをした構成を有する入力装置100について説明をする。
上述の第1の実施形態では、X電極41bが複数の単位電極体41mおよび連結部41nを備えると共に、Y電極42bが複数の単位電極体42mおよび連結部42nを備える構成を例として説明したが(図5参照)、X、Y電極41b、42bの構成はこの例に限定されるものではない。
上述の第1の実施形態では、検出部40sを2次元配列の基準位置よりも検出領域14Raの中心に向けてシフトした位置に設ける構成を例として説明したが、図21に示すように、検出部40sとともに構造体21、51も検出領域14Raの中心に向けてシフトした位置に設ける構成を採用するようにしてもよい。
直線Mx:検出部40sの中心を通り、かつ、X軸と平行な直線
直線My:検出部40siの中心を通り、かつ、Y軸と平行な直線
但し、検出領域14Raの周縁およびその近傍に配置される構造体21、51は、直線Mx、Myに対して非対称であってもよい。また、上述の構造体21、51の配列を、X電極41bおよびY電極42bの湾曲に応じて歪ませるようにしてもよい。
[2.1 入力装置の構成]
図24Aは、本技術の第2の実施形態に係る入力装置の構成の一例を示す断面図である。図24Bは、図24Aの一部を拡大して表す断面図である。第2の実施形態は、電極層14が電極素子43Aを含む点において、第1の実施形態とは異なっている。電極素子43Aは、基材41aと、この基材41aの同一の主面に設けられた複数のX電極41bおよびY電極42bとを備えている。
(変形例)
上述の第2の実施形態では、電極層14と導体層16との間に支持層15が設けられた例について説明したが(図24A、図24B参照)、図27Aに示すように、支持層15を省略して、電極層14と導体層16とが隣接するようにしてもよい。図27Aでは、構造体21は、検出部40sの中央に配置されているが、隣り合う検出部40sの中間に配置されていても良い。
[3.1 入力装置の構成]
本技術の第3の実施形態に係る入力装置100では、X電極41bおよびY電極42bのうちの一方の単位電極体がサブ電極により構成されるのに対して、他方の単位電極体が平板状の電極により構成される。第3の実施形態は、これ以外の点においては第1の実施形態と同様である。
図28Aに示すように、X電極41bの単位電極体41mは、平板状の電極により構成されている。一方、図28Bに示すように、Y電極42bの単位電極体42mは、複数のサブ電極42wにより構成されている。
図29Aに示すように、X電極41bの単位電極体41mは複数のサブ電極41wにより構成されている。一方、図29Bに示すように、Y電極42bの単位電極体42mは平板状の電極により構成されている。
(変形例1)
上述の第1の構成例では、電極層14と導体層16との間に支持層15が設けられた例について説明したが(図30A参照)、図31Aに示すように、支持層15を省略して、電極層14と導体層16とが隣接するようにしてもよい。
上述の第1の実施形態の変形例4において、X電極41bおよびY電極42bのうちの一方が複数のサブ電極により構成されるのに対して、他方が1つの平板状の電極により構成されるようにしてもよい。
図32Aに示すように、X電極41bは平板状の電極により構成されているのに対して、Y電極42bは、複数のサブ電極42wにより構成されている。X、Y電極41b、42bの構成としてこのような構成を採用する場合、第3の実施形態の第1の構成例と同様に、支持層15を介してX電極41bと対向する導体層16(図1参照)を省略する、もしくは導体層16に代えて、高分子樹脂層16aを採用するようにしてもよい。
図32Bに示すように、X電極41bは複数のサブ電極41wにより構成されているのに対して、Y電極42bは1つの平板状の電極により構成されている。X、Y電極41b、42bの構成としてこのような構成を採用する場合、第3の実施形態の第2の構成例と同様に、支持層12を介してY電極42bと対向する金属層11(図1参照)を省略するようにしてもよい。
[4.1 入力装置の構成]
図33に示すように、本技術の第4の実施形態では、検出部40sの面積が、検出領域14Raの中心から周縁の方向に向かって大きくなる。ここで、「検出部40sの面積」とは、Z軸方向から電極層14を見たときの検出部40sの面積を意味する。このような構成を採用することで、周縁に近づくに従って静電容量の変化量が減少することを抑制できる。すなわち、周縁に近づくに従って検出感度が低下することを抑制できる。例えば、検出領域14Raの周縁にある検出部40sの変形量が、同じ加重で検出領域14Raの中心にある検出部40sの変形量の1/2である場合、周縁にある検出部40sの静電容量の変化量を2倍にすることが好ましい。第4の実施形態は、これ以外の点においては第1の実施形態と同様である。
周縁に近づくに従って静電容量の変化量が減少することを抑制するための構成は、上述の例に限定されるものではなく、以下の(a)から(d)の構成のうちの1つ以上を採用するようにしてもよい。
(a)検出領域14Raの中心から周縁の方向に向かって、検出部の面積が大きくなる。
(b)X電極41bおよびY電極42bがそれぞれ、複数のサブ電極41c、42cを含んでいる場合、検出領域14Raの中心から周縁の方向に向かって、サブ電極41c、42cのピッチが小さくなる。
(c)検出領域14Raの中心から周縁の方向に向かって、構造体21、51の少なくとも一方の高さが低くなる。
(d)検出領域14Raの中心から周縁の方向に向かって、検出部40sの誘電率を変化させる。
例えば、第1の実施の形態の場合は、Y電極42bと金属層11の間の部材(例えば支持層12など)、または、X電極41bと導体層16の間の部材の誘電率を、検出領域14Raの中心から周縁の方向に向かって高くするとよい。また、X電極41bとY電極42bの間の部材の誘電率を、検出領域14Raの中心から周縁の方向に向かって低くするとよい。
第2の実施の形態の場合は、X、Y電極41b、42bと金属層11の間の部材、または、X、Y電極41b、42bと導体層16の間の部材の誘電率を、検出領域14Raの中心から周縁の方向に向かって低くするとよい。
図34は、本技術の第5の実施形態に係る入力装置100Aの構成の一例を示す断面図である。図35は、図34に示した入力装置100Aの電極層14Aの構成の一例を示す平面図である。第5の実施形態に係る入力装置100Aは、4つの検出領域14Ra1~14Ra4を有する電極層14Aを備える点において、第1の実施形態に係る入力装置100とは異なっている。ここでは、入力装置100Aが4つの検出領域14Ra1~14Ra4を備える場合を例として説明するが、検出領域の数はこれに限定されるものではなく、4以外の複数とすることも可能である。複数の検出領域14Ra1~14Ra4それぞれの周囲には、枠体配置領域14Rbが設けられている。この枠体配置領域14Rbに枠体22、52が設けられる。
図36Aは、本技術の第6の実施形態に係る入力装置100Bの外観の一例を示す斜視図である。第6の実施形態に係る入力装置100Bは、全体として円筒形状を有している。したがって、入力操作面である第1の面2mは、円筒面状を有している。
図36Cは、本技術の第6の実施形態の変形例に係る入力装置100Cの構成の一例を示す斜視図である。検出領域14Raが、軸方向から見ると、C字状を有していてもよい。すなわち、検出領域14Raが、矩形を筒状に湾曲させた形状を有していてもよい。検出領域14Raの円周方向に対向する2辺の間には、軸方向に延在された細長い枠体配置領域14Rb3が設けられ、この枠体配置領域14Rb3は、枠体配置領域14Rb1、14Rb2と繋がっている。このように検出領域14Raの四方が枠体配置領域14Rb1、14Rb2、14Rb3により取り囲まれている場合には、検出部40sのシフトの方向は、検出領域14Raの周縁から中心の方向であることが好ましい。
図37Aは、第7の実施形態に係る入力装置100Cの外観の一例を示す平面図である。第7の実施形態に係る入力装置100Cは、全体として不定形な板状を有している。すなわち、入力操作面である第1の面2mは、不定形状を有している。
図38は、本技術の第8の実施形態に係る入力装置100Dの構成の一例を示す断面図である。第8の実施形態に係る入力装置100Dは、操作部材3aを備える点以外では、第1の実施形態と同様であり、適宜その説明を省略する。
第8の実施形態に係る入力装置100Dは、ディスプレイ2に代えて、フレキシブルシート4を備える。フレキシブルシート4には、後述するように複数のキー領域4aが配置されており、入力装置100Dは、全体としてキーボード装置として用いられる。
フレキシブルシート4は、例えばPET(ポリエチレンテレフタレート)、PEN(ポリエチレンナフタレート)、PMMA(ポリメタクリル酸メチル)、PC(ポリカーボネート)、PI(ポリイミド)などのフレキシブル性を有する絶縁性のプラスチックシートで構成される。フレキシブルシート4の厚みは特に限定されず、例えば0.1mm~1mmである。
第9の実施形態に係る電子機器は、第1~第8の実施形態に係る入力装置100、100A、100B、100Cおよびそれらの変形例のいずれかを表示部に備えている。以下に、本技術の第9の実施形態に係る電子機器の例について説明する。
[試験例]
図42Aは、試験例に係るシミュレーションの条件を示す断面図である。図42Bは、試験例に係るシミュレーションの条件を示す平面図である。
まず、導電層、支持層、電極層、金属層およびディスプレイをこの順序で積層した入力装置を設定した。支持層は、複数の構造体を2次元配列することにより構成した。電極層は、電極層の面内方向に等間隔で2次元配列した複数のセンサを含む構成とした。なお、導電層、支持層、電極層、金属層およびディスプレイの端部は固定状態とした。
入力装置の入力操作面:矩形状、サイズ65mm×120mm
電極層:厚さ0.3mm
ディスプレイ:厚さ0.3mm、ヤング率80GPa(ガラス基板を想定したヤング率)
構造体:円柱状、直径0.2mm、5MPa
センサ:マトリックス配列(11×19[個])
入力装置の断面の変形は比重にブロードであり、ほぼディスプレイの全面に広がっている。
入力操作面の周縁に近づくほど、断面の変形量が小さくなる傾向にある。
入力操作面の周縁に近づくほど、加重位置と変形ピークとの位置がずれる。その変形ピークのずれの方向は、入力操作面の周縁から中心に向かう方向となる。
(1)
導体層と、
検出領域を有し、該検出領域に2次元配列された複数の検出部を含む検出層と、
上記導体層および上記検出層を離間する複数の構造体と
を備え、
上記複数の検出部のうち、少なくとも上記検出領域の周縁側にある検出部は、2次元配列の基準位置よりも上記検出領域の周縁から内側の方向に向かってシフトした位置に設けられているセンサ。
(2)
上記検出領域は、角部および辺部を有し、
上記辺部の中央近傍の領域における上記検出部のシフト距離は、上記角部の近傍の領域における上記検出部のシフト距離に比べて大きい(1)に記載のセンサ。
(3)
上記検出領域の中心から周縁の方向に向かって、上記検出部のシフト距離が大きくなる(1)または(2)に記載のセンサ。
(4)
上記検出領域は、長辺と短辺を有し、
上記長辺の中央近傍の領域および上記短辺の中央近傍の領域における上記検出部のシフト距離が、ほぼ等しい(1)から(3)のいずれかに記載のセンサ。
(5)
上記検出領域は、長辺と短辺を有し、
上記長辺の中央近傍の領域における上記検出部のシフト距離が、ほぼ等しい(1)から(4)のいずれかに記載のセンサ。
(6)
上記複数の検出部の静電容量の変化に基づいて、操作位置を検出する制御部をさらに備える(1)から(5)のいずれかに記載のセンサ。
(7)
上記制御部内における上記複数の検出部の設定位置は、上記2次元配列の基準位置である(6)に記載のセンサ。
(8)
上記検出領域の中心から周縁の方向に向かって、上記検出部の面積が大きくなる(1)から(7)のいずれかに記載のセンサ。
(9)
上記複数の構造体のうち、少なくとも上記検出領域の周縁側にある構造体は、構造体の配列の基準位置よりも上記検出領域の周縁から内側の方向に向かってシフトした位置に設けられている(1)から(8)のいずれかに記載のセンサ。
(10)
上記複数の構造体は、上記検出領域に設けられ、
上記検出領域の周縁に設けられ、上記導体層および上記検出層を離間する周縁構造体をさらに備える(1)から(8)のいずれかに記載のセンサ。
(11)
上記導体層および上記検出層の少なくとも一方が、可撓性を有している(1)から(10)のいずれかに記載のセンサ。
(12)
上記検出層は、複数の第1の電極と、該複数の第1の電極と交差する複数の第2の電極とを含み、
上記複数の検出部はそれぞれ、上記複数の第1の電極と上記複数の第2の電極との交差部に設けられている(1)から(11)のいずれかに記載のセンサ。
(13)
上記第1の電極および上記第2の電極の少なくとも一方は、複数のサブ電極を含んでいる(12)に記載のセンサ。
(14)
上記第1の電極は、平板状の電極であり、
上記第2の電極は、複数のサブ電極を含み、
上記第2の電極が、上記第1の電極に比して上記導体層の近くに設けられている(12)に記載のセンサ。
(15)
第1の導体層と、
第2の導体層と、
上記第1の導体層および上記第2の導体層の間に設けられているとともに、検出領域を有し、該検出領域に2次元配列された複数の検出部を含む検出層と、
上記第1の導体層および上記検出層を離間する複数の第1の構造体と、
上記検出層および上記第2の導体層を離間する複数の第2の構造体と
を備え、
上記複数の検出部のうち、少なくとも上記検出領域の周縁側にある検出部は、2次元配列の基準位置よりも上記検出領域の周縁から内側の方向に向かってシフトした位置に設けられているセンサ。
(16)
上記複数の第1の構造体のうち、少なくとも上記検出領域の周縁側にある第1の構造体は、上記第1構造体の配列の基準位置よりも上記検出領域の周縁から内側の方向に向かってシフトした位置に設けられ、
上記複数の第2の構造体のうち、少なくとも上記検出領域の周縁側にある第2の構造体は、上記第2構造体の配列の基準位置よりも上記検出領域の周縁から内側の方向に向かってシフトした位置に設けられている(15)に記載のセンサ。
(17)
操作部と、
上記操作部の表面または内部に設けられている導体層と、
検出領域を有し、該検出領域に2次元配列された複数の検出部を含む検出層と、
上記導体層および上記検出層を離間する複数の構造体と
を備え、
上記複数の検出部のうち、少なくとも上記検出領域の周縁側にある検出部は、2次元配列の基準位置よりも上記検出領域の周縁から内側の方向に向かってシフトした位置に設けられている入力装置。
(18)
操作部と、
上記操作部の表面または内部に設けられている第1の導体層と、
第2の導体層と、
上記第1の導体層および上記第2の導体層の間に設けられているとともに、検出領域を有し、該検出領域に2次元配列された複数の検出部を含む検出層と、
上記第1の導体層および上記検出層を離間する複数の第1の構造体と、
上記検出層および上記第2の導体層を離間する複数の第2の構造体と
を備え、
上記複数の検出部のうち、少なくとも上記検出領域の周縁側にある検出部は、2次元配列の基準位置よりも上記検出領域の周縁から内側の方向に向かってシフトした位置に設けられている入力装置。
(19)
操作部と、
上記操作部の表面または内部に設けられている導体層と、
検出領域を有し、該検出領域に2次元配列された複数の検出部を含む検出層と、
上記導体層および上記検出層を離間する複数の構造体と
を備え、
上記複数の検出部のうち、少なくとも上記検出領域の周縁側にある検出部は、2次元配列の基準位置よりも上記検出領域の周縁から内側の方向に向かってシフトした位置に設けられている電子機器。
(20)
操作部と、
上記操作部の表面または内部に設けられている第1の導体層と、
第2の導体層と、
上記第1の導体層および上記第2の導体層の間に設けられているとともに、検出領域を有し、該検出領域に2次元配列された複数の検出部を含む検出層と、
上記第1の導体層および上記検出層を離間する複数の第1の構造体と、
上記検出層および上記第2の導体層を離間する複数の第2の構造体と
を備え、
上記複数の検出部のうち、少なくとも上記検出領域の周縁側にある検出部は、2次元配列の基準位置よりも上記検出領域の周縁から内側の方向に向かってシフトした位置に設けられている電子機器。
2 フレキシブルディスプレイ(表示部)
100 入力装置
3 操作部材
11 金属層(第1の導体層)
12、15 支持層
13、17、43 接着層
14 電極層
14Ra 検出領域
14Rb 枠体形成領域
16 導体層(第2の導体層)
21、51 構造体
22、52 枠体
40s 現実の検出部
40si 仮想的な検出部
41a 基材
41b X電極
42a 基材
42b Y電極
Claims (20)
- 導体層と、
検出領域を有し、該検出領域に2次元配列された複数の検出部を含む検出層と、
上記導体層および上記検出層を離間する複数の構造体と
を備え、
上記複数の検出部のうち、少なくとも上記検出領域の周縁側にある検出部は、2次元配列の基準位置よりも上記検出領域の周縁から内側の方向に向かってシフトした位置に設けられているセンサ。 - 上記検出領域は、角部および辺部を有し、
上記辺部の中央近傍の領域における上記検出部のシフト距離は、上記角部の近傍の領域における上記検出部のシフト距離に比べて大きい請求項1に記載のセンサ。 - 上記検出領域の中心から周縁の方向に向かって、上記検出部のシフト距離が大きくなる請求項1に記載のセンサ。
- 上記検出領域は、長辺と短辺を有し、
上記長辺の中央近傍の領域および上記短辺の中央近傍の領域における上記検出部のシフト距離が、ほぼ等しい請求項1に記載のセンサ。 - 上記検出領域は、長辺と短辺を有し、
上記長辺の中央近傍の領域に含まれる上記各検出部のシフト距離が、ほぼ等しい請求項1に記載のセンサ。 - 上記複数の検出部の静電容量の変化に基づいて、操作位置を検出する制御部をさらに備える請求項1に記載のセンサ。
- 上記制御部内における上記複数の検出部の設定位置は、上記2次元配列の基準位置である請求項6に記載のセンサ。
- 上記検出領域の中心から周縁の方向に向かって、上記検出部の面積が大きくなる請求項1に記載のセンサ。
- 上記複数の構造体は、上記検出領域に配置され、
上記複数の構造体のうち、少なくとも上記検出領域の周縁側にある構造体は、構造体の配列の基準位置よりも上記検出領域の周縁から内側の方向に向かってシフトした位置に設けられている請求項1に記載のセンサ。 - 上記複数の構造体は、上記検出領域に設けられ、
上記検出領域の周縁に設けられ、上記導体層および上記検出層を離間する周縁構造体をさらに備える請求項1に記載のセンサ。 - 上記導体層および上記検出層の少なくとも一方が、可撓性を有している請求項1に記載のセンサ。
- 上記検出層は、複数の第1の電極と、該複数の第1の電極と交差する複数の第2の電極とを含み、
上記複数の検出部はそれぞれ、上記複数の第1の電極と上記複数の第2の電極との交差部に設けられている請求項1に記載のセンサ。 - 上記第1の電極および上記第2の電極の少なくとも一方は、複数のサブ電極を含んでいる請求項12に記載のセンサ。
- 上記第1の電極は、平板状の電極であり、
上記第2の電極は、複数のサブ電極を含み、
上記第2の電極が、上記第1の電極に比して上記導体層の近くに設けられている請求項12に記載のセンサ。 - 第1の導体層と、
第2の導体層と、
上記第1の導体層および上記第2の導体層の間に設けられているとともに、検出領域を有し、該検出領域に2次元配列された複数の検出部を含む検出層と、
上記第1の導体層および上記検出層を離間する複数の第1の構造体と、
上記検出層および上記第2の導体層を離間する複数の第2の構造体と
を備え、
上記複数の検出部のうち、少なくとも上記検出領域の周縁側にある検出部は、2次元配列の基準位置よりも上記検出領域の周縁から内側の方向に向かってシフトした位置に設けられているセンサ。 - 上記複数の第1の構造体のうち、少なくとも上記検出領域の周縁側にある第1の構造体は、上記第1構造体の配列の基準位置よりも上記検出領域の周縁から内側の方向に向かってシフトした位置に設けられ、
上記複数の第2の構造体のうち、少なくとも上記検出領域の周縁側にある第2の構造体は、上記第2構造体の配列の基準位置よりも上記検出領域の周縁から内側の方向に向かってシフトした位置に設けられている請求項15に記載のセンサ。 - 操作部と、
上記操作部の表面または内部に設けられている導体層と、
検出領域を有し、該検出領域に2次元配列された複数の検出部を含む検出層と、
上記導体層および上記検出層を離間する複数の構造体と
を備え、
上記複数の検出部のうち、少なくとも上記検出領域の周縁側にある検出部は、2次元配列の基準位置よりも上記検出領域の周縁から内側の方向に向かってシフトした位置に設けられている入力装置。 - 操作部と、
上記操作部の表面または内部に設けられている第1の導体層と、
第2の導体層と、
上記第1の導体層および上記第2の導体層の間に設けられているとともに、検出領域を有し、該検出領域に2次元配列された複数の検出部を含む検出層と、
上記第1の導体層および上記検出層を離間する複数の第1の構造体と、
上記検出層および上記第2の導体層を離間する複数の第2の構造体と
を備え、
上記複数の検出部のうち、少なくとも上記検出領域の周縁側にある検出部は、2次元配列の基準位置よりも上記検出領域の周縁から内側の方向に向かってシフトした位置に設けられている入力装置。 - 操作部と、
上記操作部の表面または内部に設けられている導体層と、
検出領域を有し、該検出領域に2次元配列された複数の検出部を含む検出層と、
上記導体層および上記検出層を離間する複数の構造体と
を備え、
上記複数の検出部のうち、少なくとも上記検出領域の周縁側にある検出部は、2次元配列の基準位置よりも上記検出領域の周縁から内側の方向に向かってシフトした位置に設けられている電子機器。 - 操作部と、
上記操作部の表面または内部に設けられている第1の導体層と、
第2の導体層と、
上記第1の導体層および上記第2の導体層の間に設けられているとともに、検出領域を有し、該検出領域に2次元配列された複数の検出部を含む検出層と、
上記第1の導体層および上記検出層を離間する複数の第1の構造体と、
上記検出層および上記第2の導体層を離間する複数の第2の構造体と
を備え、
上記複数の検出部のうち、少なくとも上記検出領域の周縁側にある検出部は、2次元配列の基準位置よりも上記検出領域の周縁から内側の方向に向かってシフトした位置に設けられている電子機器。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019212333A (ja) * | 2016-12-30 | 2019-12-12 | エルジー ディスプレイ カンパニー リミテッド | ストレッチャブルタッチスクリーン、ストレッチャブルタッチスクリーンの製造方法及び表示装置 |
EP3446200A4 (en) * | 2016-04-20 | 2020-02-26 | Nextinput, Inc. | FORCE SENSITIVE ELECTRONIC DEVICE |
JP7431909B2 (ja) | 2018-03-27 | 2024-02-15 | 株式会社ジャパンディスプレイ | タッチセンサ及びタッチセンサ付き表示装置 |
JP7510983B2 (ja) | 2016-09-13 | 2024-07-04 | アップル インコーポレイテッド | 力感知及び触覚フィードバックを伴うキーレスキーボード |
US12079043B2 (en) | 2017-07-26 | 2024-09-03 | Apple Inc. | Computer with keyboard |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3264234A4 (en) * | 2015-02-27 | 2018-08-08 | Fujikura Ltd. | Wiring body, wiring substrate, and touch sensor |
JP6760385B2 (ja) * | 2016-09-14 | 2020-09-23 | ソニー株式会社 | センサ、入力装置および電子機器 |
CN111527385A (zh) * | 2018-01-05 | 2020-08-11 | 索尼公司 | 传感器、输入装置和电子设备 |
CN109343731B (zh) * | 2018-09-03 | 2020-07-10 | 深圳市华星光电技术有限公司 | 触控显示器及其触控检测方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63175883A (ja) * | 1987-01-17 | 1988-07-20 | 富士通株式会社 | 入力機能付マトリクス型表示装置 |
WO1997040482A1 (en) * | 1996-04-24 | 1997-10-30 | Logitech, Inc. | Touch and pressure sensing method and apparatus |
JP2011154512A (ja) * | 2010-01-27 | 2011-08-11 | Hitachi Displays Ltd | 入力装置、およびそれを備えた表示装置 |
US20120038583A1 (en) * | 2010-08-16 | 2012-02-16 | Perceptive Pixel Inc. | Force and true capacitive touch measurement techniques for capacitive touch sensors |
US20120086666A1 (en) * | 2010-10-12 | 2012-04-12 | Cypress Semiconductor Corporation | Force Sensing Capacitive Hybrid Touch Sensor |
US20120162094A1 (en) * | 2010-12-22 | 2012-06-28 | Kent Joel C | Mechanical deflection compensation for a capacitive touch input device |
JP2013015976A (ja) * | 2011-07-01 | 2013-01-24 | Saga Univ | 多機能センサ |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011017626A (ja) * | 2009-07-09 | 2011-01-27 | Sony Corp | 力学量検知部材及び力学量検知装置 |
-
2014
- 2014-06-13 WO PCT/JP2014/003151 patent/WO2015019533A1/ja active Application Filing
- 2014-06-13 CN CN201480043212.6A patent/CN105431804B/zh not_active Expired - Fee Related
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63175883A (ja) * | 1987-01-17 | 1988-07-20 | 富士通株式会社 | 入力機能付マトリクス型表示装置 |
WO1997040482A1 (en) * | 1996-04-24 | 1997-10-30 | Logitech, Inc. | Touch and pressure sensing method and apparatus |
JP2011154512A (ja) * | 2010-01-27 | 2011-08-11 | Hitachi Displays Ltd | 入力装置、およびそれを備えた表示装置 |
US20120038583A1 (en) * | 2010-08-16 | 2012-02-16 | Perceptive Pixel Inc. | Force and true capacitive touch measurement techniques for capacitive touch sensors |
US20120086666A1 (en) * | 2010-10-12 | 2012-04-12 | Cypress Semiconductor Corporation | Force Sensing Capacitive Hybrid Touch Sensor |
US20120162094A1 (en) * | 2010-12-22 | 2012-06-28 | Kent Joel C | Mechanical deflection compensation for a capacitive touch input device |
JP2013015976A (ja) * | 2011-07-01 | 2013-01-24 | Saga Univ | 多機能センサ |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3446200A4 (en) * | 2016-04-20 | 2020-02-26 | Nextinput, Inc. | FORCE SENSITIVE ELECTRONIC DEVICE |
US10775940B2 (en) | 2016-04-20 | 2020-09-15 | Nextinput, Inc. | Force-sensitive electronic device |
JP7510983B2 (ja) | 2016-09-13 | 2024-07-04 | アップル インコーポレイテッド | 力感知及び触覚フィードバックを伴うキーレスキーボード |
JP2019212333A (ja) * | 2016-12-30 | 2019-12-12 | エルジー ディスプレイ カンパニー リミテッド | ストレッチャブルタッチスクリーン、ストレッチャブルタッチスクリーンの製造方法及び表示装置 |
JP7030086B2 (ja) | 2016-12-30 | 2022-03-04 | エルジー ディスプレイ カンパニー リミテッド | ストレッチャブルタッチスクリーン、ストレッチャブルタッチスクリーンの製造方法及び表示装置 |
US11287935B2 (en) | 2016-12-30 | 2022-03-29 | Lg Display Co., Ltd. | Stretchable touchscreen, method for manufacturing the same, and display device using the same |
US12079043B2 (en) | 2017-07-26 | 2024-09-03 | Apple Inc. | Computer with keyboard |
JP7431909B2 (ja) | 2018-03-27 | 2024-02-15 | 株式会社ジャパンディスプレイ | タッチセンサ及びタッチセンサ付き表示装置 |
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