WO2015016542A1 - Cellule photovoltaïque tandem de type obtenue par fusion à élément double et son procédé de fabrication - Google Patents

Cellule photovoltaïque tandem de type obtenue par fusion à élément double et son procédé de fabrication Download PDF

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WO2015016542A1
WO2015016542A1 PCT/KR2014/006834 KR2014006834W WO2015016542A1 WO 2015016542 A1 WO2015016542 A1 WO 2015016542A1 KR 2014006834 W KR2014006834 W KR 2014006834W WO 2015016542 A1 WO2015016542 A1 WO 2015016542A1
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layer
solar cell
charge transport
tco
substrate
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PCT/KR2014/006834
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English (en)
Korean (ko)
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최경진
박종혁
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국립대학법인 울산과학기술대학교 산학협력단
성균관대학교산학협력단
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Publication of WO2015016542A1 publication Critical patent/WO2015016542A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
    • H01G9/2072—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells comprising two or more photoelectrodes sensible to different parts of the solar spectrum, e.g. tandem cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a dual device fused tandem solar cell and a method of manufacturing the same, and more particularly, to a dual device fused tandem solar cell using a semiconductor nanowire and a method of manufacturing the same.
  • a solar cell is a semiconductor device that converts solar energy directly into electrical energy. It has a junction type of a p-type semiconductor and an n-type semiconductor, and its basic structure is similar to a diode. Most solar cells in mass production are silicon based solar cells. As a semiconductor substrate, silicon (Si) is used, which is an indirect interband transition semiconductor, in which light having energy above the band gap of silicon can generate electron-hole pairs. There is this.
  • the solar cell using silicon has a problem that light having energy below the bandgap of silicon does not generate electron-hole pairs and is lost in the form of thermal energy, so that light absorption is low. Since more than 30% of the incident light is reflected on the surface of the silicon wafer as the substrate, the efficiency of the solar cell is reduced.
  • solar cells using the III-V compound have various bandgaps, and thus, use these characteristics to form compound cells having different wavelength bands.
  • a tandem structure bonded by tunnel junctions is used to achieve higher energy conversion efficiency than silicon solar cells.
  • the present invention provides a method for manufacturing a III-V compound solar cell based on a silicon substrate.
  • the III-V compound solar cell manufactured according to the present invention has a high photoelectric conversion efficiency but has a disadvantage of high cell price.
  • the solar cell has the disadvantage of low price of the cell itself but low photoelectric conversion efficiency.
  • the present invention has been made to overcome the disadvantages of the prior art as described above, and an object thereof is to provide a dual device fused tandem solar cell of high photoelectric conversion efficiency and low cost.
  • the present invention in the dual device fused tandem solar cell, Nanowire solar cell; A junction layer of the tunnel junction formed on the nanowire solar cell; And a dye-sensitized solar cell formed at an upper end of the tunnel junction.
  • the nanowire solar cell comprises: a silicon substrate; A back electrode formed on the back surface of the substrate; A plurality of nanowires formed perpendicular to the upper surface of the substrate; A polymer layer formed to expose the nanowires on a portion where the nanowires are not formed on the upper surface of the substrate; And a first TCO layer in which the nanowire ends are electrically connected to each other, wherein the first TCO layer is bonded to the bottom of the junction layer.
  • the polymer layer is characterized in that at least one selected from PS (polystyrene), PMMA (polymethyl methacrylate) and BCB (benzocyclobutene).
  • the substrate is a p-type semiconductor
  • the nanowire is characterized in that the n-type semiconductor.
  • the dye-sensitized solar cell comprises: a glass layer; A second TCO layer formed at the bottom of the glass layer; A light absorption layer formed on the bottom of the second TCO layer; And a dye coating the particles of the light absorbing layer, wherein the light absorbing layer further includes an electrolyte, and a lower end of the light absorbing layer is bonded to the junction layer.
  • components of the light absorption layer are TiO 2, SiO 2 , Al 2 O 3 , ZrO 2 , Y 2 O 3 -ZrO 2, CuO, Cu 2 O, Ta 2 O 5 , PZT (Pb (Zr, Ti) O 3 ), Nb 2 O 5 , Fe 3 O 4 It is characterized in that the nano-powder made of any one or more materials selected from Fe 2 O 3 and GeO 2 .
  • the present invention provides a method for manufacturing a dual device fusion tandem solar cell, the polymer layer coating step of forming a polymer layer on the silicon substrate formed nanowires; An electrode forming step of forming a back electrode on the back surface of the substrate; A polymer layer etching step of etching the polymer layer such that nanowires protrude from the polymer layer formed on the substrate; Depositing a first TCO layer to form a TCO layer for electrically connecting the nanowire ends to each other; Forming a junction layer for tunnel junction on top of the first TCO layer; A second TCO layer deposition step of forming a TCO layer on the bottom of the separately provided glass layer; A light absorption layer forming step of forming a light absorption layer by using the light absorption nanopowder at the bottom of the second TCO layer; A dye coating step of coating a dye on a delivery surface of the light absorption layer; Bonding the light absorption layer formed at the bottom of the glass layer to the junction layer formed at the end of the nano
  • the silicon substrate is p-type, characterized in that the nanowires are n-type.
  • the polymer layer is characterized in that any one or more selected from PS (polystyrene), PMMA (polymethyl methacrylate) and BCB (benzocyclobutene).
  • PS polystyrene
  • PMMA polymethyl methacrylate
  • BCB benzocyclobutene
  • components of the light absorption layer are TiO 2, SiO 2 , Al 2 O 3 , ZrO 2 , Y 2 O 3 -ZrO 2, CuO, Cu 2 O, Ta 2 O 5 , PZT (Pb (Zr, Ti ) O 3 ), Nb 2 O 5 , Fe 3 O 4 It is characterized in that the nano-powder consisting of any one or more materials selected from Fe 2 O 3 and GeO 2 .
  • the dual device fused tandem solar cell and a method for manufacturing the same according to the present invention are formed by forming a nanowire solar cell at the bottom and fusing a dye-sensitized solar cell on the nanowire solar cell, and the manufacturing is possible at a low price. There is a possible effect, and also has the effect of showing a high photoelectric conversion efficiency by the dual element.
  • FIG. 1 is a structural diagram of a dual device fused tandem solar cell according to the present invention
  • FIG. 1 is a procedural diagram of a manufacturing method for manufacturing FIG. 1,
  • FIG. 3 is a schematic diagram of the polymer layer coating step of FIG.
  • FIG. 4 is a schematic diagram of the back electrode forming step of FIG.
  • FIG. 5 is a schematic diagram of the polymer layer etching step of FIG.
  • FIG. 6 is a schematic diagram of the first TCO layer deposition step of FIG. 2;
  • FIG. 7 is a schematic diagram of the junction layer forming step of FIG.
  • FIG. 8 is a schematic diagram of the deposition of the second TCO layer of FIG. 2;
  • FIG. 9 is a schematic diagram of the TiO 2 layer forming step of FIG.
  • FIG. 11 is a schematic view of the bonding step of FIG.
  • FIG. 12 is a schematic diagram of the electrolyte injection step of FIG.
  • FIG. 13 is a current-voltage characteristic curve of the solar cell of FIG. 1.
  • the dual element fused tandem solar cell 100 is a dye-sensitized dye-sensitized solar cell 40 on top of a nanowire solar cell (NW-SC) as shown in FIG. 1.
  • Solar cell: DSSC is characterized in that the junction 20 is fused with the nanowire solar cell 10 is configured.
  • the nanowire solar cell 10 includes a p-type silicon substrate 11, and a bottom electrode 12, a back-side contact, is formed at the bottom of the substrate 11 for electrical connection to the outside.
  • the substrate 11 may be replaced with another material if necessary.
  • the nanowire 13 is formed on the substrate 11, the nanowire 13 is made of a material of the n-type semiconductor characteristics, the material is not limited.
  • the formation of the nanowires 13 on the substrate 11 may be configured by any method.
  • the polymer layer 14 is formed on a portion of the substrate 11 where the nanowires 13 are not formed, thereby fixing the nanowires 13 to prevent device short circuits.
  • the polymer layer 14 is made of a high molecular material, preferably may be made of PS (polystyrene), PMMA (polymethyl methacrylate), BCB (benzocyclobutene) and combinations thereof, and most preferably made of BCB.
  • PS polystyrene
  • PMMA polymethyl methacrylate
  • BCB benzocyclobutene
  • a first TCO layer 15 is formed at the end of the nanowire 13 so that all the nanowires 13 are electrically connected.
  • the dye-sensitized solar cell 40 has a glass layer 41 is formed on the top.
  • the glass layer 41 may be replaced with another transparent insulating material.
  • a second TCO layer 42 is formed at the bottom of the glass layer 41 to provide an electrical connection function to the outside.
  • a charge transport layer TiO 2 layer 43 is formed below the second TCO layer 42, and each TiO 2 particle surface of the TiO 2 layer 43 includes a coated dye 44.
  • the TiO 2 layer 43 may include SiO 2 , Al 2 O 3 , ZrO 2 , Y 2 O 3 -ZrO 2, CuO, Cu 2 O, Ta 2 O 5 , PZT (Pb (Zr, Ti) O 3 ), Nb 2 O 5 , Fe 3 O 4 , Fe 2 O 3 It may be composed of one or more selected from GeO 2 .
  • the TiO 2 layer 43 is formed by applying TiO 2 nanoparticles and then heat treatment.
  • the TiO 2 layer 43 further includes an electrolyte to impart the function of a solar cell.
  • junction 20 is a tunnel junction junction formed on an upper portion of the first TCO layer 15. It is implemented as a layer 21, the junction layer 21 is a configuration for connecting the first TCO layer 15 and the TiO 2 layer 43, it is preferably composed of platinum (Pt).
  • the method of manufacturing a dual device fused tandem solar cell includes a polymer layer coating step (S1), a back electrode forming step (S2), a polymer layer etching step (S3), and a first TCO.
  • Layer deposition step (S4), junction layer forming step (S5), second TCO layer deposition step (S6), charge transport layer forming step (S7), dye coating step (S8), bonding step (S9) and electrolyte injection step ( S10) is configured to include.
  • the polymer layer 14 is coated on the substrate 11 on which the nanowires 13 made of n-type semiconductors are formed on the p-type semiconductor substrate 11.
  • the polymer layer 14 is preferably BCB, and the polymer layer 14 is formed by heat treatment at 200 ° C. for 2 hours after coating by spin coating.
  • the back electrode 12 is formed on the bottom surface of the substrate 11 on which the polymer layer 14 is formed through e-beam evaporation vacuum deposition. / Au to form a thickness of 20 and 300nm, respectively.
  • the RIE reactive
  • the etching is performed through an ion etching process. After the polymer layer etching step S3 is performed, as shown in FIG. 5, each of the nanowires 13 protrudes from the polymer layer 14.
  • a TCO deposition process is performed to form the first TCO layer 15 on the polymer layer 14.
  • the substrate 11 is illustrated in FIG. 6. As shown, the first TCO layer 15 is electrically connected to the top of each nanowire 13.
  • the second TCO layer deposition step (S6) is a step for manufacturing the dye-sensitized solar cell 40, as shown in FIG. 7, first through a TCO deposition process on the bottom of the glass layer 41. 42).
  • a charge transport layer forming step S7 is performed to serve as an exclusive transport layer for the photo-excited charges to reach the lower end of the second TCO layer 42 formed in the step S6.
  • a 550 ° C. high temperature heat treatment process is performed. As shown in FIG. 1 , a TiO 2 layer 43, which is a charge transport layer, is formed.
  • TiO 2 layer 43 When the TiO 2 layer 43 is necessary to increase the charge transport efficiency SiO 2 , Al 2 O 3 , ZrO 2 , Y 2 O 3 -ZrO 2, CuO, Cu 2 O, Ta 2 O 5 , PZT (Pb (Zr, Ti) O 3 ), Nb 2 O 5 , Fe 3 O 4 , Fe 2 O 3 and GeO 2 may be composed of any one or more selected.
  • the glass layer 41 formed up to the TiO 2 layer 43 is finally used as a dye for coating a dye which is a light absorber on the surface of the TiO 2 particles, soaked in a 30 mM N719 solution for 18 hours to adsorb the dye and then taken out. Washing with ethanol completes the dye-sensitized solar cell 40 device, as shown in FIG.
  • the nanowire solar cell 10 and the dye-sensitized solar cell 40 manufactured through the above steps are coated with surlyn on the edges of two solar cells, and then bonded by heat treatment at 130 ° C. for 90 seconds to be tandem as shown in FIG. 10. Manufacture a solar cell.
  • the electrolyte composition used to inject the electrolyte into the TiO 2 layer for complete operation of the dye-sensitized solar cell is 0.5M 4-tert-butylpyridine, 0.6M 1-butyl-3-methylimidazolium iodide (BMII), 0.03MI 2 , 0.1 M guanidinium thiocyanate, solvent, using acetonitrile and valeronitrile (volume ratio 85:15) to finally complete the tandem solar cell shown in FIG.
  • S1 to S5 are steps for manufacturing the nanowire solar cell 10
  • S6 to S8 are steps for manufacturing the dye-sensitized solar cell 40, and thus may be independently performed. Even if it is performed first and then S1 to S5 corresponds to the same manufacturing method.
  • the last electrolyte injection step S10 may be performed immediately after the step S8.
  • FIG. 12 shows nanowire solar cell 10 (NWSC), dye-sensitized solar cell 40 (DSSC), and 1-sun of the tandem solar cell 100 (NWSC / DSSC Tandem Cells) according to the present invention.
  • NWSC nanowire solar cell 10
  • DSSC dye-sensitized solar cell 40
  • 1-sun of the tandem solar cell 100 NWSC / DSSC Tandem Cells
  • the current in the current-voltage characteristic curve of the tandem solar cell 100 has a lower current value among the lower cells constituting the tandem solar cell, and the voltage has a sum value of two lower cells.
  • tandem solar cell 100 has a current value of DSSC, but it can be seen that the voltage coincides with the sum of the DSSC and the NWSC.
  • the two cells are organically coupled well, and in particular the junction layer 21 between the two elements works well.
  • the photoelectric conversion efficiency of the nanowire solar cell 10 is 7.7%
  • the dye-sensitized solar cell 40 is 9.28%
  • the tandem solar cell 100 is 11.67%.

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Abstract

L'objectif de la présente invention est de fournir une cellule photovoltaïque tandem de type obtenue par fusion à élément double ayant un rendement de conversion photoélectrique élevé et un prix bas. A cette fin, la présente invention concerne une cellule photovoltaïque tandem de type obtenue par fusion à élément double comprenant : une cellule photovoltaïque en nanofils ; une couche de jonction d'une jonction à effet tunnel, disposée au-dessus de la cellule photovoltaïque en nanofils ; et une cellule photovoltaïque à colorant formée au-dessus de la jonction à effet tunnel.
PCT/KR2014/006834 2013-07-31 2014-07-25 Cellule photovoltaïque tandem de type obtenue par fusion à élément double et son procédé de fabrication WO2015016542A1 (fr)

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KR102624394B1 (ko) 2020-11-27 2024-01-15 한국과학기술연구원 탠덤 태양전지 모듈
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