WO2015000671A1 - Dispositif à composants optoélectroniques, procédé pour le fabriquer et procédé pour le faire fonctionner - Google Patents

Dispositif à composants optoélectroniques, procédé pour le fabriquer et procédé pour le faire fonctionner Download PDF

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Publication number
WO2015000671A1
WO2015000671A1 PCT/EP2014/062279 EP2014062279W WO2015000671A1 WO 2015000671 A1 WO2015000671 A1 WO 2015000671A1 EP 2014062279 W EP2014062279 W EP 2014062279W WO 2015000671 A1 WO2015000671 A1 WO 2015000671A1
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WIPO (PCT)
Prior art keywords
electro
optical component
optically active
active region
electromagnetic radiation
Prior art date
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PCT/EP2014/062279
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German (de)
English (en)
Inventor
Michael Popp
Arndt Jaeger
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Osram Oled Gmbh
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Publication of WO2015000671A1 publication Critical patent/WO2015000671A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means

Definitions

  • Optoelectronic component device a method for producing an optoelectronic component device and a method for operating an optoelectronic component device provided.
  • a conventional organic optoelectronic component for example an organic light emitting diode (OLED), may comprise an anode and a
  • Layer system may include one or more emitter shafts in which electromagnetic radiation is generated, one or more charge carrier pair generation layer structure of two or more each
  • Charge carrier pair generation layers ⁇ charge generating couple (CGL) and one or more electron block layers, also referred to as
  • Hole transport layer (s) (hole transport layer-HTL), and one or more hole block layers, also referred to as electron transport layer (s) ("ectron transport layer” - ETL), for directing the flow of current.
  • organic light emitting diode find increasingly widespread application in general lighting
  • OLED area light sources have hitherto been either transparent, semitransparent, diffuse or specular. Colloquially, an OLED is described as transparent or not transparent. The appearance of an OLED can, as far as known, not yet changed in the switched-on state and in the off state.
  • Optoelectronic component device a method for producing an optoelectronic component device and a method for operating an optoelectronic component device provided, with which it is possible to change the appearance and the beam direction of OLED area light sources in the off state and / or in the on state.
  • a method for producing an optoelectronic component device a method for operating an optoelectronic component device provided, with which it is possible to change the appearance and the beam direction of OLED area light sources in the off state and / or in the on state.
  • the optoelectronic component device on eisend: a Strahlradeque1le with a first optically active region and a second optically active region, wherein the first optically active region is arranged to emit a first electromagnetic radiation and the second optically active region for emitting a second electromagnetic radiation is set up; and a first electro-optical component and at least one second electro-optical component; wherein the first electro-optical component and the at least one second electro-optical component are arranged in the beam path of the radiation source to each other such that the first electromagnetic radiation is changed in a different manner than the second electromagnetic radiation, so that the first
  • the radiation source can be designed as a light-emitting component, for example a light-emitting diode, an organic light-emitting diode, an (organic) light-emitting diode laterally coupled into an optical waveguide, also referred to as
  • the optoelectronic component device can be designed as a mechanically flexible component, for example as a bendable OLED,
  • the radiation source may be configured as a surface light source, wherein the
  • first optically active region has a different orientation than the surface normal of the second optically active region.
  • orientation of a surface normal for example, the normal vector of the surface can be understood.
  • a different orientation can already be given if the normal vectors of a first surface and a second surface have different signs.
  • the first optically active region may be formed parallel to the second optically active region, for example approximately plane-parallel.
  • the first optically active region can also be opposite to the second optically active region in a form without being plane-parallel, for example tapering or diverging.
  • the surface light source can be configured as an organic light-emitting diode.
  • the organic light-emitting diode may be transparent or translucent.
  • the second electro-optical is the second electro-optical
  • Range and / or the second optically active region may be formed.
  • Component be formed between the first electro-optical device and the first optically active region.
  • the first electro-optical component and / or the second electro-optical component can / can be formed on the first optically active region and / or the second optically active region.
  • the first electro-optical component and / or the second electro-optical component can be integrated in the radiation source, for example
  • the first electro-optical is a layer cross-section of the radiation source.
  • the first electro-optical is a first electro-optical
  • Component and the second electro-optical component be designed such that the first electro-optical component at least a first electrically einsteilbare optical
  • Electro-optical device has at least a second electrically adjustable optical property.
  • the first electro-optical component and the second electro-optical component are identical to one embodiment.
  • electro-optical components have at least one of the following electro-optical components or be configured as such: a mirror with electrically tunable reflectivity; a filter with electrically tunable absorption; and / or a diaphragm with electrically tunable transmission.
  • the first electro-optical component and the second electro-optical component can have the same electro-optical component, that is to say an electro-optical component of the same type.
  • the first electro-optical component and the second electro-optical component may have a different electro-optical component.
  • Component device may be the opto-electronic
  • Component device further comprises a control device
  • Radiation source with the control device are electrically connected / is.
  • control device may be designed such that the optoelectronic properties, for example optical properties, of the first
  • Electro-optic device, the at least one second electro-optical component and the radiation source are independently variable. optical
  • Properties can be, for example, the transmission
  • Be wavelength range Another optical property, for example, the intensity distribution in a
  • control device may have a pulse modulator which is used to drive the first electro-optical component, the at least one second electro-optical component electro-optical component and / or the radiation source is set up.
  • the pulse modulator as a
  • Pulse amplitude modulator, a pulse frequency modulator and / or a pulse width modulator be set up.
  • the optoelectronic component can be designed such that the first electromagnetic radiation and the second electromagnetic radiation are approximately equal in at least one of the following properties: color tone; Saturation; or brightness.
  • the radiation source can be configured such that the first electromagnetic radiation and the second electromagnetic radiation are different in at least one of the following properties:
  • the first electro-optical is Hue; Saturation; or brightness.
  • the first electro-optical is Hue; Saturation; or brightness.
  • Component and the at least one second electro-optical device may be arranged such that the first optically active region and the second optically active region differ in at least one of the following properties: eflektsammlung; Absorption; or transmissivity.
  • the radiation source can be configured such that the first electromagnetic radiation has approximately the same color location as the second
  • the first electro-optical is the first electro-optical
  • Component and the at least one second electro-optical component be structured, for example, surface, for example, for information reproduction, for example in the form of a pictogram, a symbol, an ideogram and / or a lettering.
  • Component device as a one-sided light-emitting
  • a method for. Producing an optoelectronic component device comprising: forming a radiation source having a first optically active region and a second optically active region, wherein the first optically active region is arranged to emit a first electromagnetic radiation and the second optically active region to emit a second electromagnetic radiation is set up; and forming a first electro-electric device and forming at least one second electro-optic device; wherein the first electro-optical component and the at least one second electro-optical component in the beam path of
  • Radiation source are formed to each other such that the first electromagnetic radiation is changed in a different manner than the second electromagnetic radiation, so that the first electromagnetic radiation in
  • electromagnetic radiation is different.
  • Radiation source can be formed as a surface light source, wherein the surface normal of the first optically active region may have a different orientation than the surface normal of the second optically active region.
  • the first optically active region can be parallel to the second optically active region
  • Be formed area for example approximately
  • the organic light-emitting diode can be made transparent or translucent.
  • electro-optical component can be formed in the beam path of the first optically active region.
  • electro-optical component and the first optically active region are formed.
  • the first electro-optical component and / or the second one can / may be used
  • the first electro-optical component and / or the second one can / may be used
  • electro-optical component can be formed integrated in the radiation source, for example monolithic.
  • the first electro-optical component and the at least one second electro-optical component may be formed such that the first electro-optical component has at least one first electrically adjustable optical property and the at least one second electro-optical component at least has a second electrically adjustable optical property.
  • An electrically adjustable optical property can be, for example, the absorption, reflectivity, the
  • the first electro-optical component and the second electro-optical component may have at least one of the following electro-optical components or be formed as such: a mirror with electrically tunable reflectivity; a filter with electrically tunable absorption, - and / or a diaphragm with electrically tunable
  • Electromagnetic radiation are limited or interrupted, for example, for information reproduction.
  • the reproduced information can be formed on the screen, for example as a pictogram, an ideogram and / or a logo, which is represented for example by means of colored particles.
  • the information can be displayed by means of the restricted or interrupted beam path.
  • an electrically switchable diaphragm has a phosphor, wherein the phosphor can be introduced into the beam path by means of electrical switching or can be removed therefrom. The phosphor can become a
  • Wavelength conversion and the color appearance i. the wavelength spectrum
  • electromagnetic radiation are removed. This can For example, the color appearance can be changed.
  • Filtering the electromagnetic radiation can one
  • Electro-optical component and the second electro-optical component will be designed as identical electro-optical components.
  • the first electro-optical component and the second electro-optical component may be designed as a different electro-optical component
  • Component be formed, for example as
  • the method may further comprise forming or providing a
  • Control device may be formed or be such that the optoelectronic properties of the first
  • Electro-optic device, the at least one second electro-optical component and the radiation source are changed independently.
  • Control device have a pulse modulator or be formed.
  • the pulse modulator is / is for driving the first electro-optical component, the at least one second electro-optical component and the
  • the pulse modulator can be designed as a pulse amplitude modulator, a pulse frequency modulator and / or a pulse width modulator. In one embodiment of the method, the
  • optoelectronic component be formed such that the first electromagnetic radiation and the second
  • optoelectronic component be formed such that the first electromagnetic radiation and the second
  • the first electro-optical component and the at least one second electro-optical component can be arranged such that the first optically active region and the second optically active region differ in at least one of the following properties: reflectivity; Absorption; or
  • Optoelectronic component are formed such that the first electromagnetic radiation has approximately the same color locus as the second electromagnetic radiation.
  • electro-optical component and the at least one second electro-optical component are formed structured, for example, to reproduce information
  • Optoelectronic component device can be formed as a one-sided light-emitting mirror or one-sided light-emitting window.
  • a method of operating an optoelectronic component device comprising: driving an optoelectronic component device according to any of the above-described embodiments; the first one
  • Electro-optical component and the at least one second electro-optical component are driven differently such that the first electromagnetic radiation is changed in a different manner than the second e1ektromagnetician radiation, so that the first electromagnetic
  • Distinguish radiation in at least one property of the second electromagnetic radiation Distinguish radiation in at least one property of the second electromagnetic radiation.
  • Electro-optical device are driven such that the first optically active region at least partially emits a first electromagnetic radiation.
  • Electro-optic device are driven such that the first optically active region is at least partially reflective, for example in terms
  • Electro-optical device are driven such that the first optically active region at least partially for example, in terms of absorbing
  • the first optically active region electromagnetic radiation incident on the first optically active region.
  • the first optically active region electromagnetic radiation incident on the first optically active region.
  • Electro-optical device are driven such that the first optically active region is at least partially optically inactive, for example, in which a diaphragm is formed in front of the first optically active region.
  • the second electro-optical component can be controlled such that the second optically active region at least partially emits a second electromagnetic radiation.
  • the second electro-optical component can be controlled in such a way that the second optically active region is at least partially reflective, for example as regards
  • the second electro-optical component can be controlled in such a way that the second optically active region is at least partially absorbent, for example as regards
  • the second electro-optical component can be controlled in such a way that the second optically active region is at least partially optically inactive, for example by forming a diaphragm in front of the second optically active region.
  • the driving of the radiation source with the driving of the first electro-optical component and / or the second
  • Electro-optical component and the radiation source are driven such that the first optically active region is at least partially transparent or translucent.
  • Electro-optical component and the radiation source are driven such that the second optically active region is at least partially transparent or translucent.
  • Component and the radiation source are driven such that the first electro-optical component is at least partially reflective and the second electro-optical component and the second optically active region are at least partially transmissive or translucent.
  • Electro-optical device and the second electro-optical device are driven such that the first optically active region -at least partially a first
  • the emitted electromagnetic radiation and the second electro-optical component and the second optically active region are at least partially transmissive or translucent.
  • control signal of the optoelectronic component can be used as an input signal for the control of the first electro-optical component and / or of the at least one second electro-optical component
  • Optoelectronic component device as one-sided operated light-emitting mirror or one-sided light-emitting window
  • the pulse modulator can be a phase dimmer on iron or as such
  • phase dimming a provided voltage or a provided stream is set up.
  • the phase dimmer can be used for a phase angle control or a
  • Optoelectronic component device according to various embodiments
  • FIG. 2 shows a schematic cross-sectional view of an optoelectronic component device according to various exemplary embodiments
  • Figure 3 is a schematic representation of a
  • FIGS. 4a, b are schematic representations of a method for operating an optoelectronic
  • Figures 5a-d are schematic diagrams of a method for operating an optoelectronic
  • Figures 6a-c are schematic representations of a method for operating an optoelectronic
  • Figure 7 is a diagram of a method of operation
  • Figure 8 is a conventional optoelectronic
  • a radiation source may be a device emitting electromagnetic radiation.
  • electromagnetic radiation As electromagnetic
  • Radiation is X-rays, UV radiation, light,
  • a radiation source for example, a laser beam
  • electromagnetic radiation emitting semiconductor device and / or as an electromagnetic
  • electromagnetic radiation emitting diode as an electromagnetic radiation emitting transistor or as an organic electromagnetic radiation
  • the radiation may, for example, be light in the visible range, UV light and / or infrared light.
  • the radiation may, for example, be light in the visible range, UV light and / or infrared light.
  • the radiation may, for example, be light in the visible range, UV light and / or infrared light.
  • light emitting diode light emitting diode
  • organic light emitting diode organic light emitting diode
  • the light emitting device may be part of an integrated circuit in various embodiments. Furthermore, a plurality of
  • a radiation source which is embodied as an optoelectronic component, can in various configurations, as an organic light emitting diode (OLED), an organic photovoltaic system, for example an organic solar cell, an organic sensor, an organic field effect transistor (OFET) and / or organic electronics
  • OLED organic light emitting diode
  • OFET organic field effect transistor
  • the organic field effect transistor may be an all-OFET in which all
  • Component may have an organic functional layer structure, which is synonymously also referred to as organically functional layer structure.
  • the organically functional layer structure may comprise or be formed from an organic substance or an organic substance mixture, which may be used, for example, to provide a
  • an optically active region of an optoelectronic component can be understood as the region of an optoelectronic component which absorbs electromagnetic radiation and from this a photocurrent or an electrical voltage
  • An optoelectronic component may, for example, two or more optically active regions
  • optically active regions for example, optically active sides of a flat optoelectronic device may be, for example, two themselves
  • an optoelectronic component having two or more optically active regions may also be referred to as a so-called stacked organic light emitting diode having two or more
  • a first OLED unit can be used as a first optically active one
  • Range and a second OLED unit may be formed as a second optically active region.
  • An optoelectronic Component which has two flat, optically active sides can be transparent, for example, as a transparent organic light-emitting diode.
  • the optically active region can also have a planar, optically active side and a flat, optically inactive
  • an organic light-emitting diode which is set up as a top emitter or bottom emitter.
  • the optoelectronic component device can be controlled by means of the phase angle, for example, be dimmed, for example by means of a phase control and / or a
  • phase angle may be understood to mean the angular interval in one half cycle of the input voltage of the radiation source and / or electro-optical components, while no voltage is applied to the connected components by means of the dimmer.
  • the phase angle may be an amount in a range of
  • phase angle of about 0 ° can be understood as undimmed.
  • Phase angle of about 180 ° can be understood as being maximally dimmed.
  • Maximum dimming may be understood as being similar to an open switch electrically connected in series with the group of dimmed components.
  • translucent or “translucent layer” can be understood in various embodiments that a layer is permeable to light
  • the light generated by the light-emitting component for example one or more
  • Wavelength ranges for example, for light in one
  • Wavelength range of the visible light for example, at least in a partial region of the wavelength range of 380 nm to 780 nm.
  • the term "translucent layer” in various embodiments is to be understood to mean that substantially all of them are in one
  • Amount of light also from the structure (for example layer) is decoupled, whereby a part of the light can be scattered here
  • transparent or “transparent layer” can be understood in various embodiments that a layer is transparent to light
  • Wavelength range from 380 nm to 780 nm), wherein light coupled into a structure (for example a layer) is coupled out of the structure (for example layer) substantially without scattering or light conversion.
  • FIG. 1a-d show schematic cross-sectional views of an optoelectronic component device according to various exemplary embodiments.
  • Device device 100 with a first electro-optical component 110, a second electro-optical component 120 and an optoelectronic component 130.
  • the illustrated embodiment of the optoelectronic component 130 has a first electrode 104 on or above a carrier 102. On or above the first electrode 104, an organic functional layer structure 106 is formed. Over or on the organically functional
  • Layer structure 106 is a second electrode 108
  • the second electrode 108 is electrically insulated from the first electrode 104 by means of electrical insulation 112.
  • a barrier thin film 118 is disposed such that the second electrode 108, the electrical insulation 112, and the organic functional layer structure 106 are surrounded by the barrier film 118, that is, in FIG.
  • barrier thin layer 118 can hermetically seal the trapped layers
  • an adhesive layer 122 is disposed such that the adhesive layer 122 supports the adhesive layer 122
  • Barrier thin-film 118 surface and hermetically seals against harmful environmental influences.
  • a cover 124 is arranged on or above the adhesive layer 122.
  • the cover 124 is, for example, adhered to the barrier thin film 118 with an adhesive 122, for example, laminated.
  • the optoelectronic component 130 in the form of a
  • a light-emitting device for example in the form of an organic light-emitting diode 130, may have a carrier 102.
  • the carrier 102 may be used, for example, as a support for electronic elements or layers, for example
  • the carrier 102 may be glass, quartz, and / or a semiconductor material on or formed of iron.
  • the carrier may comprise or be formed from a plastic film or a laminate with one or more plastic films.
  • the plastic may contain one or more polyolefins
  • the plastic may be polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC),
  • the carrier 102 may be one or more of the above
  • the carrier 102 may
  • the carrier 102 may comprise or be formed of a metal, for example copper, silver, gold, platinum, iron, aluminum, chromium, molybdenum, for example one
  • a carrier 102 comprising a metal or a
  • Metal compound may also be formed as a metal foil or a metal-coated foil.
  • the carrier 102 may be translucent or even transparent. In a carrier 102, a metal
  • the metal may be considered a thin one
  • Layer be transparent or translucent layer formed and / or the metal to be part of a mirror structure.
  • the carrier 102 may have a mechanically rigid region and / or a mechanically flexible region or be formed in such a way.
  • a carrier 102 having a mechanically rigid region and a mechanically flexible region may be patterned, for example by having the rigid region and the flexible region of different thickness.
  • a mechanically flexible carrier 102 or the mechanically flexible region may, for example, be a foil
  • the carrier 102 may be referred to as
  • optoelectronic component 130 for example, be transparent or translucent with respect to the provided electromagnetic radiation of the optoelectronic component 130th
  • the carrier 102 may be in different
  • the organic functional layer structure 106 may be arranged (not shown), for example, on the side of the organic functional layer structure 106 and / or on the side of the organically functional
  • Layer structure 106 faces away. On or about your carrier 102 can in different
  • the barrier layer may comprise or be formed from one or more of the following materials:
  • Indium zinc oxide aluminum-doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and
  • the barrier layer can be supported by means of an atomic layer deposition (ALD) method, a molecular layer deposition method (MLD) and / or a chemical vapor deposition (CVD) method, for example a plasma
  • ALD atomic layer deposition
  • MLD molecular layer deposition method
  • CVD chemical vapor deposition
  • Gas phase deposition process (plasma enhanced chemical vapor deposition - PE-CVD) are formed.
  • the barrier layer may have two or more identical and / or different layers or layers, for example next to one another and / or one above the other, for example as a barrier layer structure or a barrier stack, for example. Furthermore, the barrier layer in different
  • Embodiments have a layer thickness in a range of about 0.1 nm (one atomic layer) to about hr 1000 nm, for example, a layer thickness in a range of about 10 nm to about 200 nm, for example one
  • a cover (not shown) may be provided on or over the barrier layer and / or the barrier layer as a cover be formed, for example as a
  • Barrier layer be optional, for example by the
  • Carrier 102 is already hermetically sealed.
  • Barrier layer is not present, on or above the carrier 102), an electrically active region of the
  • the electrically active area may be considered the area of the
  • light emitting device 130 in which an electric current for operation of the optoelectronic component, such as the light-emitting
  • Component 130 flows.
  • the electrically active region may include a first electrode 104, a second electrode
  • Layer structure 106 have.
  • the first electrode 104 (eg, in the form of a first electrode layer 110) may be deposited on or over the barrier layer (or, if the barrier layer is not present (shown) on or above the carrier 102).
  • the first electrode 104 (hereinafter also referred to as lower
  • Electrode 104) may be made of an electric
  • conductive material can be made or how
  • Transparent conductive oxides are transparent, conductive materials, for example
  • Metal oxides such as zinc oxide, tin oxide, Cadmium oxide, titanium oxide, indium oxide, or indium-innate oxide (ITO).
  • binary metal oxygen compounds such as ZnO, SnO 2 , or In 2 O 3
  • ternary metal oxygenates such as AlZnO, Zn 2 SnO 4 , CdSnO 3 , ZnSnO 3 , MgO 2 O 4 , GalnO 3 , Zn 2 In 2O 5 are also included or
  • TCOs do not necessarily correspond to one
  • stoichiometric composition and may also be p-doped or n-doped.
  • Electrode 104 have a metal, for example, Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, and compounds, combinations or alloys of these materials.
  • Electrode 104 may be formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa.
  • An example is one
  • ITO indium tin oxide
  • Electrode 104 provide one or more of the following materials, as an alternative or in addition to the materials mentioned above: networks of metallic nanowires and particles, such as Ag, Ag / Mg networks of carbon nanotubes; Graphene particles and layers; Networks of semiconducting nanowires.
  • the first electrode 104 may be electrically conductive polymers or transition metal oxides or electrically
  • the first layer having conductive transparent oxides.
  • the first layer having conductive transparent oxides.
  • Electrode 104 and the carrier 102 may be translucent or transparent.
  • the first electrode 104 may have a layer thickness of less than or equal to about 25 nm, for example, a layer thickness of less than or equal to about 20 nm, for example one
  • Layer thickness of less than or equal to about 18 nm.
  • the first electrode 104 may have a layer thickness of greater than or equal to about 10 nm, for example, a layer thickness greater than or equal to about 15 nm.
  • the first electrode 104 may have a layer thickness in a range of about 10 nm to about 25 nm, for example, a layer thickness in a range of about 10 nm to about 18 nm, for example, a layer thickness in a range of about 15 nm to about 18 nm.
  • the first electrode 104 may have a layer thickness, for example
  • a layer thickness in a range of about 75 nm to about 250 nm, for example one
  • the first electrode 104 is made of, for example, a network of metallic nanowires, such as Ag, that may be combined with conductive polymers, a network of carbon nanotubes that may be combined with conductive polymers, or Graphene layers and composites is formed, the first electrode 104, for example, a
  • Layer thickness in a range of about 1 nm to about 500 nm for example, a layer thickness in a range of about 10 nm to about 400 nm, for example, a layer thickness in a range of
  • the first electrode 104 can be used as the anode, ie as
  • hole-injecting electrode may be formed or as
  • the first electrode 104 may be a first electrical
  • a first electrical potential (provided by a power source (not shown), for example, a power source or a voltage source) can be applied.
  • the first electrical potential may be applied to the carrier 102, and may then be indirectly supplied to the first electrode 104 or may be.
  • the first electrical potential may be, for example, the ground potential or another predetermined reference potential.
  • the organic functional layer structure 106 may include a plurality of organic functional layer structures.
  • the organic electroluminescent layer structure 106 may also have more than two organically functional layer structures,
  • the other organic functional layer structures (not limited to, the other organic functional layer structures).
  • organically functional layered structures 106 may be formed. Several organic functionalities
  • Layer structures can be the same or different be formed, for example, an equal or
  • the organic functional layer structure 106 may be disposed on or above the first electrode 104.
  • a second organically functional layer structure may be arranged above the first organically functional layer structure, wherein between the first organically functional layer structure
  • Layer structures may be provided a respective charge carrier pair generation layer structure.
  • organic functional layer structure 106 each have one or more emitter layers, for example, with fluorescent and / or phosphorescent emitters, and one or more Lochtechnischstiken ⁇ not shown in Fig.l) (also referred to as Lochtransportschient (s)).
  • one or more electron conductive layers may be used.
  • emitter layer (s) examples include organic or organometallic compounds, such as derivatives of polyfluorene, polythiophene and polyphenylene (eg 2- or 2, 5-substituted poly-p-). phenylenevinylene) and metal complexes, for example
  • Iridium complexes such as blue phosphorescent FIrPic
  • Dicyanomethylene -2-methyl-6-glolidolidyl-9-enyl-4H-pyran
  • non-polymeric emitters can be deposited by means of thermal evaporation, for example.
  • polymer emitters which can be deposited in particular by means of a wet-chemical method for example a spin-coating method (also referred to as spin coating).
  • the emitter materials may be suitably embedded in one or more matrix material (s).
  • Emitter materials are also provided in other embodiments.
  • light-emitting device 130 may be selected such that light-emitting device 100 emits white light.
  • the emitter layer (s) can / can
  • the emitter layer (s) may also be composed of several sub-layers, such as a blue-fluorescent emitter layer or blue-phosphorescent emitter layer, a green-phosphorescent emitter layer and a red-phosphorescent emitter layer. By mixing the different colors, the emission of light result in a white color impression. Alternatively, it can also be provided in the beam path through this
  • Layers generated primary emission to arrange a converter material that at least partially absorbs the primary radiation and emits a secondary radiation of different wavelength, so that from a (not yet white)
  • the emitter materials of various organic functional layer structures can also be chosen such that the individual emitter materials emit light of different colors (for example blue, green or red or any other color combinations, for example any other complementary color combinations), but that, for example, the total light, the a total of all organic functional layer structures is emitted and emitted from the OLED to the outside, a light of predetermined color, such as white light, is.
  • colors for example blue, green or red or any other color combinations, for example any other complementary color combinations
  • An organic functional layer structure 106 may
  • the one or more electroluminescent layers generally one or more electroluminescent layers on iron.
  • the one or more electroluminescent pixels generally one or more electroluminescent pixels on iron.
  • Layers may or may include organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules”), or a combination of these materials
  • organic electroluminescent layer structure 106 comprises one or more electroluminescent layers embodied as a hole transport layer such that, for example, in the case of an OLED, an effective one
  • the organically functional layered structure 106 may include one or more functional layers referred to as
  • Electron transport layer is executed or are, so that, for example, in an OLED an effective Elektroneninj tion is made possible in an electroluminescent layer or an electroluminescent region.
  • As a material for the hole transport layer can be any material for the hole transport layer.
  • the one or more electroluminescent layers may or may not be referred to as
  • electroluminescent layer On or over the organic electroluminescent
  • Layer structure 106 or optionally on or over the one or more other organic compound
  • Electrode 108 may be formed according to one of the embodiments of the first electrode 104, wherein the first electrode 104 and the second electrode 108 may be configured the same or different in one embodiment. In various embodiments, metals are particularly suitable. In various embodiments, the second
  • Electrode 108 (for example in the case of a metallic second electrode 108), for example have a layer thickness of less than or equal to about 2000 nm,
  • a layer thickness of less than or equal to about 1000 nm for example, have a layer thickness of less than or equal to about 500 nm
  • a layer thickness of less than or equal to about 50 nm for example, a layer thickness of less than or equal to about 45 nm » for example, a layer thickness of less than or equal to about 40 nm, for example, a layer thickness of less than or equal to approximately 35 nm, for example a layer thickness of less than or equal to approximately 30 nm, for example a layer thickness of less than or equal to approximately 25 nm, for example a layer thickness of less than or equal to approximately 20 nm,
  • Embodiments of one or more of the materials and be formed with the respective layer thickness, as described above in connection with the first electrode 104.
  • Electrode 104 and the second electrode 108 are both formed translucent or transparent.
  • the light-emitting device 130 shown in Fig.la can be described as a top and bottom emitter (in other words, as transparent
  • the second electrode 108 can be used as anode, ie as
  • hole-injecting electrode may be formed or as
  • Cathode so as an electron injecting electrode.
  • the second electrode 108 may have a second electrical connection to which a second electrical connection
  • the second electrical potential may have a value such that the difference from the first electrical potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15V, for example, a value in a range of about 3V to about 12V.
  • a contact pad 114, 116 may be electrically and / or physically connected to an electrode 104, 108. However, a contact pad 114, 116 may also be configured as a portion of an electrode 104, 108, or a connecting slide.
  • the first electrode 104 may be electrically connected to a first electrical contact pad 116, to which a first electrical potential can be applied - provided by a power source (not shown), for example a current source or a voltage source.
  • the first contact pad 116 may be formed on or above the carrier 102 in the geometric edge region of the optically active region of the light-emitting component 130, for example laterally next to the first electrode 10.
  • the first electrical potential may be applied to the carrier 102 and then indirectly applied to the first electrode 104.
  • the first electrical potential may be, for example, the ground potential or another predetermined reference potential.
  • Electrode 108 to be physically and electrically connected to a second contact pad 114, to which the second electrical potential can be applied - provided by a
  • Contact pad 114 may be formed in the geometric edge region of the optically active region of light-emitting component 130 on or above carrier 102, for example laterally next to first electrode 104.
  • the contact pads 114, 116 are by means of electrical
  • Isolations 112 are electrically isolated from the counter-pole electrodes 104, 108. In other words: the electrical
  • Isolations 112 may be configured such that a current flow between two electrically conductive regions, for example, between the first electrode 104 and the second electrode 108 or, for example, between the first Electrode 104 and the second contact pad 114 is prevented.
  • the substance or the substance mixture of the electrical insulation can be, for example, a coating or a coating agent, for example a polymer and / or a lacquer.
  • the lacquer may, for example, have a coating substance which can be applied in liquid or in powder form,
  • the electrical insulation 112 can be applied or formed, for example, lithographically or by means of a printing process, for example, structured.
  • Printing process for example, an inkjet printing ⁇ Inkj et-Printing), a screen printing and / or a pad printing (pad-printing) have.
  • electrical isolation 112 may be optional, for example, in forming the
  • the contact pads 114, 116 may be a substance or a substance mixture similar to the first substance or mixture of substances
  • Electrode 104 and / or the second electrode 108 or be formed therefrom for example as a
  • Metal layer structure comprising at least one chromium layer and at least one aluminum layer, for example chromium-aluminum-chromium (Cr-Al-Cr); or molybdenum-aluminum-molybdenum (Mo-Al-Mo), silver-magnesium (Ag-Mg), aluminum.
  • Cr-Al-Cr chromium-aluminum-chromium
  • Mo-Al-Mo molybdenum-aluminum-molybdenum
  • Ag-Mg silver-magnesium
  • the contact pads 114, 116 may, for example, a
  • a Verka beeting for example in the form of a
  • Barrier thin film / thin film encapsulation 118 may be formed or be.
  • a "barrier thin film” or a “barrier thin film” 118 can be understood, for example, as a layer or layer structure which is suitable for providing a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture) and Oxygen, form.
  • the barrier film 118 is formed to be resistant to OLED damaging materials such as
  • the barrier film 118 may be formed as a single layer (in other words, as
  • the barrier thin film 118 may comprise a plurality of sublayers formed on each other.
  • the barrier thin film 118 may comprise a plurality of sublayers formed on each other.
  • Barrier thin film 118 as a stack of layers (stack)
  • the barrier film 118 or one or more sublayers of the barrier film 118 may be formed, for example, by a suitable deposition process, e.g. by means of a
  • Atomic Layer Deposition method according to an embodiment, e.g. a Plasma Enhanced Atomic Layer Deposition (PEALD) or a plasmaless
  • Chemical Vapor Deposition e.g. one
  • PECVD plasma enhanced chemical vapor deposition
  • plasmaless vapor deposition plasmaless vapor deposition
  • PLCVD Chemical Vapor Deposition
  • ALD atomic layer deposition process
  • Barrier thin film 118 having multiple sublayers, all sublayers formed by an atomic layer deposition process.
  • a layer sequence comprising only ALD layers may also be referred to as "nanolaminate”.
  • a barrier film 118 comprising a plurality of sub-layers, one or more sub-layers of the barrier film 118 by means of a different deposition than one method
  • Atomic layer deposition processes are deposited
  • the barrier film 118 may, according to one embodiment, have a film thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example a film thickness of about 10 nm to about 100 nm according to a
  • Embodiment for example, about 40 nm according to an embodiment.
  • all partial layers may have the same layer thickness. According to another embodiment in which the barrier thin layer 118 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another embodiment in which the barrier thin layer 118 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another embodiment in which the barrier thin layer 118 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another embodiment in which the barrier thin layer 118 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another
  • Barrier thin layer 118 have different layer thicknesses. In other words, at least one of
  • Partial layers have a different layer thickness on iron than one or more other of the partial layers.
  • the barrier thin-film layer 118 or the individual partial layers of the barrier thin-film layer 118 may, according to one embodiment, be formed as a translucent or transparent layer.
  • the barrier film 118 (or the individual sublayers of the barrier film 118) may be made of a translucent or transparent material (or combination of materials that is translucent or transparent).
  • the barrier thin layer 118 or (in the case of a layer stack having a plurality of partial layers) one or more of the partial layers of the
  • Barrier film 118 comprising or being formed from one of the following materials: alumina, zinc oxide, zirconia, titania, haf ium oxide, tantalum oxide,
  • Layer stack having a plurality of sublayers one or more of the sublayers of the barrier film 118 comprise one or more high refractive index materials, in other words one or more high refractive index materials, for example, having a refractive index of at least 2. It should also be noted that in various aspects of the sublayers of the barrier film 118 comprise one or more high refractive index materials, in other words one or more high refractive index materials, for example, having a refractive index of at least 2. It should also be noted that in various combinations of the sublayers of the barrier film 118 comprise one or more high refractive index materials, in other words one or more high refractive index materials, for example, having a refractive index of at least 2. It should also be noted that in various combinations of the sublayers of the barrier film 118 comprise one or more high refractive index materials, in other words one or more high refractive index materials, for example, having a refractive index of at least 2. It should also be noted that in various combinations of the sublayers of the barrier
  • Embodiments can be completely dispensed with a barrier thin film 118.
  • the optoelectronic component device can, for example, have a further encapsulation structure, as a result of which a barrier thin layer 118 can become optional, for example a cover, for example a cavity glass encapsulation or metallic encapsulation.
  • an adhesive 122 and / or on or above the barrier thin film 118 may be used
  • Protective varnish 122 may be provided, by means of which, for example, a cover 124 (for example a glass cover 12, a metal foil cover 124, a sealed plastic film cover 124 ⁇ is secured to the barrier film 118, for example glued.
  • a cover 124 for example a glass cover 12, a metal foil cover 124, a sealed plastic film cover 124 ⁇ is secured to the barrier film 118, for example glued.
  • Protective varnish 122 has a layer thickness of greater than 1 ⁇
  • the adhesive may include or be a lamination adhesive.
  • light-scattering particles for example dielectric
  • metal oxides such as silicon oxide (SiO 2), zinc oxide (ZnO), zirconium oxide (ZrO 2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga20 x ), alumina, or provided titanium oxide.
  • Other particles may be suitable, provided that they have a
  • Metals such as gold, silver, iron nanoparticles, or
  • an electrically insulating layer (not shown) may be applied or be, for example, SiN, for example, with a layer thickness in a range of about 300 nm to about 1.5 ⁇ ,
  • the adhesive may be configured such that it itself has a refractive index that is less than the refractive index of the refractive index
  • Such an adhesive may be, for example, a low-refractive adhesive such as a
  • an adhesive may be a high refractive index adhesive
  • Embodiments can be completely dispensed with an adhesive 122, for example in embodiments in which the cover 124, for example made of glass, are applied to the barrier thin film 118 by means of, for example, plasma spraying.
  • the electrically active region may optionally be arranged a getter layer (not shown) such that the Gette layer is the electrically active
  • the getter layer can be structured, for example in an op isch inactive edge region of the optoelectronic component.
  • the getter layer may be translucent, transparent or opaque and have a layer thickness of greater than about 1 ⁇ , for example, a layer thickness of several ⁇ .
  • Getter layer have a lamination adhesive.
  • the light-emitting device 130 (for example, combined with the barrier thin film 118) may be provided in the light-emitting device 130.
  • the / may
  • Cover 124 and / or the adhesive 122 have a refractive index (for example, at a wavelength of 633 nra) of 1.55.
  • the cover 124 for example of glass, for example by means of a frit bonding ⁇ glass frit bonding / glass soldering / seal glass bonding) applied by means of a conventional glass solder in the geometric edge regions of the organic optoelectronic device 100 with the barrier film 108 become.
  • a frit bonding ⁇ glass frit bonding / glass soldering / seal glass bonding applied by means of a conventional glass solder in the geometric edge regions of the organic optoelectronic device 100 with the barrier film 108 become.
  • Electro-optical component 110, 120 may be formed as a colored, matte, silver and / or diffuse electrically switchable structure. In various embodiments, a
  • Electro-optical device 110, 120 as an electrically switchable mirror with tunable Ref lectivity
  • the immense reflectivity can be carried out by electrochromic, gasochromic or thermochromic.
  • An electrically switchable mirror layer with tunable Ref lectivity can be designed as they for example, described in DE10031294A1;
  • Transmission or an electrically switchable filter with tuneable absorption can be designed as described, for example, in: J. Jacobsen et al. , IBM System Journal 36 (1997) 457-463; B. Comiskey et al.
  • Electro-optical component 110, 120 may be formed as a film and glued on or over the optoelectronic device 130, for example with an adhesive according to one of the embodiments shown above. In one
  • the adhesive which is used for adhering an electro-optical component 110, 120 also be arranged as Auskoppeltik, as will be described in more detail below.
  • the electro-optical component 110, 120 may be such as
  • Control signal to the electro-optical device 110, 120, the optical properties of the electro-optical device 110, 120 are changed, for example, the transmission, absorption and / or reflection of electromagnetic radiation by / in / from the electro-optical device 110, 120.
  • a control signal for example the change of a voltage applied to the electro-optical component 110, 120
  • electro-optical component 110, 120 (see Fig.5 and
  • the optical characteristics can be changed in a range of 0% (no change) to 100% (full change).
  • electro-optical device 110, 120 may be formed such that the optical properties of the electro-optical device abruptly, i. instantaneous, unsteady; change with the application of a control signal to the electro-optical component.
  • Electro-optical device 110, 120 may be formed so that the optical properties of the electro-optical device continuously, i. fluent, steady; with the
  • the optoelectronic device is operated in a DC mode.
  • the transmissivity and reflectivity of the optoelectronic component 130 are given discreetly, i. there are
  • a static outcoupling layer 126, 128 and / or a self-regulating one can be any suitable static outcoupling layer 126, 128 and / or a self-regulating one.
  • An outcoupling layer 126, 128 may be formed, for example, as an external outcoupling foil 126, 128 on or above the carrier 102 or as an internal auxucial splint (not shown) in the layer cross section of the optoelectronic component 130.
  • the decoupling layer 126, 128 may comprise a matrix and scattering centers distributed therein, wherein the
  • Layer cross-section - average refractive index (average Refractive index) of the outcoupling layer 126, 128 is smaller or larger than the average refractive index of the layer from which the electromagnetic radiation is provided.
  • the decoupling layer 126, 128 and / or the scattering centers can, for example, according to one of the embodiments of
  • Adhesive layer 122 may be configured.
  • a self-regulating decoupling layer 126, 128 can be a matrix or scattering centers of a substance or a Stoffgeraisch
  • Scattering centers to the matrix at a first operating temperature of the optoelectronic component device is less than 0.05 and at a second operating temperature of
  • Refractive index difference is greater than 0.05.
  • the scattering centers and / or the matrix may comprise or from a thermotropic substance
  • Such a device may, for example, a film with scattering particles or a
  • the film can for example be applied to the substrate outside. Further possibilities may be a direct structuring of the substrate outside or the introduction of scattering particles into the substrate, for example into a glass substrate.
  • Decoupling layer 126, 128 may be provided in the beam path of the light emitted by the optoelectronic component on one of the electro-optical components 110, 120 (Fig.lb). In various embodiments, a static outcoupling layer 126, 128 and / or a self-regulating
  • Optoelectronic component emitted light between one of the electro-optical components 110, 120 and the optoelectronic component 130 may be provided (Fig. Lc).
  • one or more static decoupling layer (s) 126, 128 and / or one or more self-regulating decoupling layer (s) 126, 128 may be arranged in the beam path of the light emitted by the optoelectronic component, in accordance with FIGS
  • FIG. 1 Exemplary embodiment of a multiplicity of possible combinations of a plurality of outcoupling layers 126, 128 with regard to a first electro-optical component 110 and a second electro-optical component 120 is shown in FIG.
  • Optoelectronic component generally be a light-emitting component, such as a light emitting diode, an organic light emitting diode, a laterally into the carrier 102 light einkoppelnde (organic) light emitting diode, also referred to as page-coupled LED / OLED, a fluorescent tube, a Glühf denlampe, a compact fluorescent lamp.
  • a light-emitting component such as a light emitting diode, an organic light emitting diode, a laterally into the carrier 102 light einkoppelnde (organic) light emitting diode, also referred to as page-coupled LED / OLED, a fluorescent tube, a Glühf denlampe, a compact fluorescent lamp.
  • Optoelectronic component device as a mechanical be formed flexible component, for example as a bendable OLED.
  • FIGS. 2 shows a schematic cross-sectional view of an optoelectronic component device according to various embodiments according to one of the embodiments of FIGS.
  • the control unit 202 can be electrically connected to the first electro-optical component 110 by means of electrical connections 206 and drive it.
  • the control unit 202 can be electrically connected to the second electro-optical component 120 by means of electrical connections 208 and drive it.
  • the control unit 202 can be connected to the optoelectronic by means of electrical connections 204 and the ontaktpads 114, 116
  • Component 130 to be electrically connected and this
  • the controller 202 may include a pulse modulator (not limited to, but not limited to, a pulse modulator (not shown).
  • the control unit 202 may be configured such that the power supply connected to the control unit 102
  • Components 110, 120, 130 controlled independently of each other, that is energized, can be.
  • the driving of the electro-optical components 110, 120 can take place by means of a voltage applied to the electro-optical components 110, 120 or an applied current.
  • the optical properties of the electro-optical components 110, 120 can by means of a change in the pulse width or the pulse frequency of the voltage pulses, for example by means of a Pulse width modulation (PWM), a pulse frequency modulation (PFM); and / or by means of a change of the control voltage, for example by means of a pulse amplitude modulation (PAM) or a DC modulation (DCM) (direct current
  • PWM and PFM Ans euerung can be used, for example, if the electro-optical components 110, 120 are formed such that can be switched only between two states,
  • a PAM and DC drive can be used, for example, if the electro-optical components 110, 120 are designed such that the optical properties by means of the magnitude and / or the current direction of
  • applied voltage can be adjusted.
  • FIG. 3 shows a schematic representation of a method for operating an optoelectronic component device according to various exemplary embodiments.
  • electro-optical device 120 (according to one embodiment of the description of Fig. 1); for a third
  • optoelectronic component device 306 with only a second electro-optical component 120; and for a fourth (conventional) optoelectronic component device without electro-optical components.
  • device 130 is configured as a transparent organic light-emitting diode 130 that can emit light up and down.
  • the optically active surface which emits light upwards may, for example, be referred to as the first optically active region and the surface which emits light downwards may be referred to as the second optically active region.
  • Electro-optical device be optically inactivating and prevent emission from an optically active region (shown by means of the arrow 322), for example, in which the electro-optical device light, which is emitted from an optically active region, reflects, reflects, filters and / or absorbed.
  • An electro-optical device is optically transparent if it does not change the light emitted by an optically active region - represented by the arrow 324. For the case consideration, the appearance of the optoelectronic
  • optoelectronic component device is not provided.
  • the first is electro-optical
  • Component 110 optically inactivating and the second
  • electro-optical component 120 is switched to be transmissive.
  • the emission of light upward is inhibited, so that light is emitted downwardly only from the second optically active region.
  • Optoelectronic device device 306 and fourth optoelectronic device device 308 emit light up and down.
  • the first electro-optical component 110 and the second electro-optical component 120 are connected in a transmissive manner.
  • the second case 320 In the second case 320
  • Construction device 302, 304, 306, 308 light up and down.
  • a third case 330 the first electro-optical component 110 and the second electro-optical component 120 are optically inactivated.
  • the first optoelectronic component device 302 emits light only down, the second optoelectronic
  • Component device 304 no light
  • Optoelectronic component device 306 light only up and the fourth optoelectronic component device 308 light up and down.
  • the first is electro-optic
  • Component 110 transmissive and the second electro-optical component 120 optically inactivating switched.
  • the emission of light downward is inhibited, so that light is emitted upward only from the first optically active region.
  • the first optoelectronic component device 302 and the fourth optoelectronic component device 308 emit light up and down. From the case consideration 310, 320, 330, 340 it can be seen that it is with the second optoelectronic
  • Component device 304 is possible, a
  • Optoelectronic device device to switch optically inactive, although the optoelectronic device is optically active.
  • electro-optical device 120 as an electrical
  • a transparent optoelectronic component 130 may, for example, have a transparency of approximately 50% due to transparent electrical contacts and the organically functional layer structure (see FIG. 1 a).
  • a transparency of approximately 50% due to transparent electrical contacts and the organically functional layer structure (see FIG. 1 a).
  • the appearance of the optoelectronic device can be changed, for example, whether an optically inactivating switched optoelectronic device 110, 120 should appear as a mirror or a glossy or matte colored surface.
  • Optoelectronic device may have a different appearance on the inside than the outside of the
  • scattering layers and / or coupling-out layers in the beam path of the observer for example in the optoelectronic component.
  • electro-optical component 120 (Fig.4b) shown.
  • the outside of the first electro-optical component 110 is visible at a glance 410 in the direction of the first electro-optical component 110 (FIG. 4 a) in the case of the first optoelectronic component device 302 and the lateral optoelectronic component device 304.
  • the third optoelectronic component device 306 and the fourth optoelectronic component device 308 appear transparent.
  • the inside of the first electro-optical component 110 is visible in the case of the first optoelectronic component device 302 and the second optoelectronic component device 304 in the direction of the second electro-optical component 120 (FIG.
  • the third optoelectronic component device 306 and the fourth optoelectronic component device 308 appear transparent.
  • the optoelectronic component devices 302, 30, 306, 308 transparent.
  • the outside of the first electro-optical component 110 is visible at a glance 410 in the direction of the first electro-optical component 110 (FIG. A) in the first optoelectronic component device 302 and the second optoelectronic component device 304.
  • the inside of the second electro-optical device 120 is visible and the fourth Optoelectronic device device 308 appears transparent.
  • the outside of the second electro-optical component 120 is visible in the case of the second optoelectronic component device 304 and the third optoelectronic component device 306 in the direction of the second electro-optical component 120 (FIG. At the first optoelectronic
  • the inside of the first electro-optic device 120 is visible and the fourth optoelectronic device device 308 appears transparent.
  • the interior of the second electro-optical component 120 is visible in the case of the second optoelectronic component device 304 and the third optoelectronic component device 306 in the direction of the first electro-optical component 120 (FIG.
  • the first optoelectronic component device 302 and the fourth optoelectronic component device 308 appear transparent.
  • the outer side of the second electro-optical component 120 is visible in the case of the second optoelectronic component device 304 and the third optoelectronic component device 306 in the direction of the second electro-optical component 110 ⁇ FIG.
  • the first optoelectronic component device 302 and the fourth optoelectronic component device 308 appear transparent.
  • Optoelectronic component device 304 is possible that the optoelectronic component device in
  • FIG. 5 a - c show schematic representations of a method for operating an optoelectronic component device according to various exemplary embodiments.
  • FIG. 5 a shows an optoelectronic component device 100 according to one embodiment of the descriptions of FIGS. 1 and 2. While the optoelectronic component 130 emits light, the first electro-optical component can / can 110 and / or the second electro-optical component 120 are driven pulsed (see Figure 2). The pulsed
  • Control can, for example, as a pulse width modulation (PWM), a pulse frequency modulation (PFM) a
  • PWM pulse width modulation
  • PFM pulse frequency modulation
  • Pulse amplitude modulation PAM
  • PAM Pulse amplitude modulation
  • PCM Pulse code modulation Due to the inertia of the human eye, mixed scenarios of the case considerations 310, 320, 330, 340 of the second optoelectronic can be used by means of the pulsed activation
  • Component device the following properties: The first electromagnetic radiation 500 and the second
  • electromagnetic radiation 510 have identical
  • the optoelectronic component 130 is arranged between the first electro-optical component 110 and the second electro-optical component 120.
  • the first electro-optical component 110 and the second electro-optical component 120 are considered to be electrically tunable
  • the first electro-optical component 110 may therefore also be referred to below as the first electro-optical mirror 110 and the second electro-optical component 120 subsequently also as the second electro-optical mirror 120.
  • electro-optical mirror reflects the electromagnetic radiation 100% in the opposite direction -
  • the light emitted to the top (500) is redirected 100% down (510), so that instead of originally 50% of the total
  • Radiation can be adjusted by means of the control of the electro-optical components 110, 120 independently of the control of the optoelectronic component 130.
  • Fig.5b-d show different controls of a
  • electro-optical device 110, 120 Shown is the transmission 502 as a function of the time 504 of a
  • the duty cycle (Mux) can be understood as the inverse ratio of the transmission time 512, within which an electro-optical mirror 110, 120 is transmissive or a high one
  • Transmission coefficient 502 with respect to the time of a period 506 of the drive.
  • the switching of the electro-optical device between the high-transmission state and the low-transmission state can be realized, for example, by turning on or off the electro-optical device. For this it is assumed that the electro-optical component
  • Fig.5b and Fig.5c are two different controls, with which a duty cycle of 2 realized becomes.
  • a controlled electro-optical component 110, 120 is as long as reflective as well as transmissive on average over time, ie is 50% transparent or translucent and 50% reflective. If only the first electro-optical component 110 is driven in such a way while the second electro-optical component 120 is transmitting ⁇ first case 310 - see FIG.
  • Optoelectronic component device 100 with respect to the first optically active region is thus 1/3.
  • Mirror 110, 120 can on average over time
  • the period 506, 508 can be changed, for example, by means of pulse frequency modulation.
  • the duty cycle can, for example, by means of a
  • Pulse width modulation can be set (shown in
  • Such a controlled electro-optical component 110, 120 has a reflected portion of electromagnetic radiation of, for example, 75%. This will be a
  • Tasting ratio of 4 allows.
  • the radiation ratio of the optoelectronic component device 100 with respect to the first optically active region is thus 1/8.
  • the electromagnetic radiation of the optoelectronic component device is emitted in such a way as it is emitted by the optoelectronic component, that is to say 50% upwards and 50% downwards in the above-described assumption.
  • a transmission of the first electro-optical mirror 110 on a time average of 0% upwards 0% of the total electromagnetic radiation is emitted and downwards 100%.
  • the emission ratio of the optoelectronic component device 100 with respect to the first optically active region is 0 (first case 310 in FIG. 3).
  • the range of the possible emission directions depends on the fundamental radiation of the optoelectronic component 130, for example in a range between 0% and 70%.
  • Component the radiation for electromagnetic radiation in both directions 500, 510 are varied in a range of 0% to 100%.
  • 6a-c show schematic representations of a method for operating an optoelectronic component device according to various exemplary embodiments.
  • the optoelectronic properties of this electro-optical component 110, 120 can be adjusted, for example the reflectivity, the transmission and / or the absorption of electromagnetic radiation at this electro-optical component 110, 120.
  • An electro-optic device 110, 120 can in
  • the (normalized) reflectivity 604 is a function of a (normalized) voltage 602 applied to the electro-optical component 110, 120-illustrated in FIG. 6 a.
  • the Electro-optical device 110, 120 may be formed such that the reflection of electromagnetic radiation to the electro-optical device 110, 120 linearly with a
  • applied voltage increases, for example at a
  • applied voltage can, for example, for a
  • Pulse amplitude modulation can be used (not
  • An electro-optical component 110, 120 can be used in
  • Component 110, 120 can be adjusted by means of a pulse width modulation - shown in Figure 6b. Shown are a first pulse width 608 and a second pulse width 610. By means of different duty cycles 608, 610 (Mux) on the electro-optical components 110, 120 can in
  • temporal means different reflectivities in the electro-optical components 110, 120 are realized, for example, a reflectivity of 40% by means of the first pulse width 608 and a reflectivity of 60% by means of the second pulse width 610th
  • An electro-optical component 110, 120 can in
  • Device 110, 120 can be adjusted by means of a pulse frequency modulation - shown in Fig.6c. Shown are a first pulse rate 612 and a second pulse width 614, whereby on average over time
  • Reflections could be realized.
  • the control of the electro-optical component 110, 120 may have a mixed form of the abovementioned modulations, for example in the form of pulse code modulation.
  • the electro-optical components 110, 120 can be designed and controlled in such a way that the transmission, reflection and absorption of electromagnetic radiation by / on / in the electro-optical components 110, 120 of an optoelectronic component device 100 according to one of the illustrated functional relationships of the embodiments of the description of FIG . 5a-d and 6a-c.
  • the ratio of the proportions of electromagnetic radiation emitted by the first optically active region and the second optically active region can be determined by means of
  • the optoelectronic component can have optical properties which are dependent on the viewing direction, for example a direction-dependent transmission or reflection.
  • Such directional optical properties may be referred to as an asymmetric emission ratio.
  • An asymmetric emission ratio may, for example, have an emission of 60% of the total electromagnetic radiation from the second optically active region and 40% from the first optically active region.
  • FIG. 7 shows a diagram of a method for operating an optoelectronic component device according to various exemplary embodiments.
  • the functional relationship of the radiation ratio 702 of the optoelectronic component device 100 is characterized in the selected representation by a discontinuity of the derivative for a mirror pulse ratio 704 of FIG. In the diagram shown is only ever one
  • Electro-optical component driven pulsed see Figure 5 and Figure 6
  • the other electro-optical device is transparent. It can be seen that in an optoelectronic
  • Emission ratio 702 the transparency of the optoelectronic component to be changed, which corresponds approximately to a change of the fundamental radiation 706.
  • Abstrahlness of the optoelectronic component 130 with respect to the second optically active region 1.00 / 1.
  • the emission ratio of the optoelectronic component 130 with respect to the second optically active region is 1.50 / 1.
  • Optoelectronic device device 100 of 0.4286 results.
  • the first electro-optical device is transparent and the first electro-optical device is 40% transparent, results in a mirror pulse ratio of 2.5. As a result, 84% of the total electromagnetic radiation is emitted downwardly and emitted 16% upwards, resulting in an emission ratio of the optoelectronic component device 100 of 5.2500.
  • electro-optical device 110 is 100% transparent and the first electro-optical device is 20% transparent, resulting in a mirror pulse ratio of 5. Thus, 90% of the total electromagnetic radiation emitted upwards and 10% down, bringing a Emission ratio of the optoelectronic
  • Device device 100 of 9,0000 results.
  • electro-optical device 110 is 0% transparent and the second electro-optical device is 60% transparent, resulting in a mirror pulse ratio of infinity. As a result, 0% of the total electromagnetic radiation is emitted upwards and 100% down, bringing a
  • control signal of the optoelectronic component as an input signal the first electro-optical component and / or the
  • At least one second electro-optical component to be set up as an input signal of the optoelectronic component.
  • Fig. 8 shows a conventional optoelectronic device.
  • a conventional optoelectronic component 800 has a first electrode 804 on a carrier 802. On the first electrode 804 is an organically functional
  • a second electrode 808 is formed.
  • the second electrode 808 is electrically isolated from the first electrode 804 by means of electrical insulation 812.
  • a barrier thin film 816 is arranged such that the second electrode 808, the electrical insulations 812, and the organic functional layer structure 806 of the
  • Barrier thin film 816 is intended to hermetically seal the enclosed layers with respect to harmful environmental influences.
  • An adhesive layer 818 is disposed on the barrier film 816 such that the adhesive layer 818 seals the barrier film 816 flat and hermetic to harmful environmental influences.
  • Adhesive layer 818 a cover 820 is arranged.
  • the cover 820 is adhered to the barrier film 816 with an adhesive 820.
  • a cover 820 is adhered to the barrier film 816 with an adhesive 820.
  • Front side and / or back of a transparent OLED area light source depending on the transparency of the OLED area light source continuously or discreetly to change.
  • Area light sources can be changed in transmittance in a range of 0% to 100%. Furthermore, the appearance of the optically active times of the OLED area light sources in the off state, that is, in the optically inactive state of the OLED can be changed.
  • the property of the appearance of an optically inactive side in the off state may include, for example, the transmissivity or reflectivity. Regardless of operating parameters of the OLED, the brightness of the OLED area light sources
  • electrically switchable mirror structure for example, an electrically switchable mirror film or an electrically switchable mirror glass, is glued to the OLED.
  • the electrically switchable mirror structure can act as an encapsulation for the OLED.
  • the electrically switchable mirror structure for example in the form of an electrically switchable mirror foil or an electrically switchable mirror glass, allows a modular structure of an OLED area light source with a plurality of mirror structures.

Landscapes

  • Electroluminescent Light Sources (AREA)

Abstract

Dans différents modes de réalisation, l'invention concerne un dispositif à composants optoélectroniques qui comprend : une source de rayonnement (130) dotée d'une première zone optiquement active et d'une deuxième zone optiquement active, la première zone optiquement active étant conçue pour émettre un premier rayonnement électromagnétique (500), la deuxième zone optiquement active étant conçue pour émettre un deuxième rayonnement électromagnétique (510); et un premier composant électro-optique (110) et au moins un deuxième composant (120) électro-optique. Le premier composant électro-optique (110) et le au moins un deuxième composant électro-optique (120) sont disposés l'un par rapport à l'autre dans le trajet du faisceau de la source de rayonnement (130) de façon que le premier rayonnement électromagnétique (500) est modifié d'une autre manière que le deuxième rayonnement électromagnétique (510), de sorte que le premier rayonnement électromagnétique (500) diffère du deuxième rayonnement électromagnétique (510) par au moins une propriété.
PCT/EP2014/062279 2013-07-02 2014-06-12 Dispositif à composants optoélectroniques, procédé pour le fabriquer et procédé pour le faire fonctionner WO2015000671A1 (fr)

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DE102013106944.4A DE102013106944A1 (de) 2013-07-02 2013-07-02 Optoelektronische Bauelementevorrichtung, Verfahren zum Herstellen einer optoelektronischen Bauelementevorrichtung und Verfahren zum Betreiben einer optoelektronischen Bauelementevorrichtung

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DE102014218666A1 (de) * 2014-09-17 2016-03-17 Osram Oled Gmbh Optoelektronische Vorrichtung mit variabler Farbeigenschaft
DE102015100250A1 (de) * 2015-01-09 2016-07-14 Osram Oled Gmbh Licht emittierende Vorrichtung

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