WO2014207946A8 - Surface layer superconductor and fabrication method of the same - Google Patents

Surface layer superconductor and fabrication method of the same Download PDF

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Publication number
WO2014207946A8
WO2014207946A8 PCT/JP2013/068450 JP2013068450W WO2014207946A8 WO 2014207946 A8 WO2014207946 A8 WO 2014207946A8 JP 2013068450 W JP2013068450 W JP 2013068450W WO 2014207946 A8 WO2014207946 A8 WO 2014207946A8
Authority
WO
WIPO (PCT)
Prior art keywords
surface layer
same
fabrication method
layer superconductor
superconductor
Prior art date
Application number
PCT/JP2013/068450
Other languages
French (fr)
Other versions
WO2014207946A1 (en
Inventor
Toshimitsu Ito
Yasuhide Tomioka
Tomoharu Ushiyama
Christos Panagopoulos
Xian Yang TEE
Original Assignee
National Institute Of Advanced Industrial Science And Technology
Nanyang Technological University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute Of Advanced Industrial Science And Technology, Nanyang Technological University filed Critical National Institute Of Advanced Industrial Science And Technology
Priority to JP2015562985A priority Critical patent/JP6169196B2/en
Priority to PCT/JP2013/068450 priority patent/WO2014207946A1/en
Priority to SG11201510509WA priority patent/SG11201510509WA/en
Publication of WO2014207946A1 publication Critical patent/WO2014207946A1/en
Publication of WO2014207946A8 publication Critical patent/WO2014207946A8/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0324—Processes for depositing or forming copper oxide superconductor layers from a solution

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

This invention concerns a method of fabricating a surface layer superconductor. The method includes performing a treatment for removing a surface and exposing a new processed surface for a superconducting crystal in which superconductivity is suppressed so as to fabricate a surface layer superconductor in which a surface layer superconducting transition temperature of the processed surface is higher than a superconducting transition temperature of the inside.
PCT/JP2013/068450 2013-06-28 2013-06-28 Surface layer superconductor and fabrication method of the same WO2014207946A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015562985A JP6169196B2 (en) 2013-06-28 2013-06-28 Method for producing surface superconductor and surface superconductor
PCT/JP2013/068450 WO2014207946A1 (en) 2013-06-28 2013-06-28 Surface layer superconductor and fabrication method of the same
SG11201510509WA SG11201510509WA (en) 2013-06-28 2013-06-28 Surface layer superconductor and fabrication method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2013/068450 WO2014207946A1 (en) 2013-06-28 2013-06-28 Surface layer superconductor and fabrication method of the same

Publications (2)

Publication Number Publication Date
WO2014207946A1 WO2014207946A1 (en) 2014-12-31
WO2014207946A8 true WO2014207946A8 (en) 2015-12-10

Family

ID=52141335

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/068450 WO2014207946A1 (en) 2013-06-28 2013-06-28 Surface layer superconductor and fabrication method of the same

Country Status (3)

Country Link
JP (1) JP6169196B2 (en)
SG (1) SG11201510509WA (en)
WO (1) WO2014207946A1 (en)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3245506B2 (en) * 1994-09-07 2002-01-15 財団法人国際超電導産業技術研究センター Surface treatment method for LnBa2Cu3O7-x single crystal substrate
JP2760321B2 (en) * 1995-04-15 1998-05-28 日本電気株式会社 Manufacturing method of oxide thin film
JP2000086400A (en) * 1998-09-09 2000-03-28 Inst Of Physical & Chemical Res Production of oxide single crystal substrate nd electronic device
JP2006027958A (en) * 2004-07-16 2006-02-02 Sumitomo Electric Ind Ltd Thin film material and its manufacturing method
JP2011195435A (en) * 2010-02-24 2011-10-06 National Institute Of Advanced Industrial Science & Technology Method for producing superconducting film, and calcination film and firing film obtained by the method
JP5453627B2 (en) * 2011-05-12 2014-03-26 株式会社日本製鋼所 Manufacturing method of oxide superconductor film with reduced internal stress
WO2012165504A1 (en) * 2011-05-31 2012-12-06 古河電気工業株式会社 Oxide superconductor thin film, superconducting fault current limiter, and method for manufacturing oxide superconductor thin film

Also Published As

Publication number Publication date
JP6169196B2 (en) 2017-07-26
JP2016531061A (en) 2016-10-06
SG11201510509WA (en) 2016-01-28
WO2014207946A1 (en) 2014-12-31

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