WO2014197891A3 - Appareil capteur à base de grille flottante et applications d'appareil capteur à base de grille flottante apparentées - Google Patents

Appareil capteur à base de grille flottante et applications d'appareil capteur à base de grille flottante apparentées Download PDF

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Publication number
WO2014197891A3
WO2014197891A3 PCT/US2014/041507 US2014041507W WO2014197891A3 WO 2014197891 A3 WO2014197891 A3 WO 2014197891A3 US 2014041507 W US2014041507 W US 2014041507W WO 2014197891 A3 WO2014197891 A3 WO 2014197891A3
Authority
WO
WIPO (PCT)
Prior art keywords
floating gate
based sensor
gate based
sensor apparatus
applications
Prior art date
Application number
PCT/US2014/041507
Other languages
English (en)
Other versions
WO2014197891A2 (fr
Inventor
Krishna JAYANT
Edwin C. Kan
Original Assignee
Cornell University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cornell University filed Critical Cornell University
Priority to US14/896,010 priority Critical patent/US10309924B2/en
Publication of WO2014197891A2 publication Critical patent/WO2014197891A2/fr
Publication of WO2014197891A3 publication Critical patent/WO2014197891A3/fr
Priority to US16/430,259 priority patent/US10962501B2/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • C—CHEMISTRY; METALLURGY
    • C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
    • C12Q—MEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEIC ACIDS OR MICROORGANISMS; COMPOSITIONS OR TEST PAPERS THEREFOR; PROCESSES OF PREPARING SUCH COMPOSITIONS; CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL OR ENZYMOLOGICAL PROCESSES
    • C12Q1/00—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions
    • C12Q1/68—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving nucleic acids
    • C12Q1/6869—Methods for sequencing
    • C—CHEMISTRY; METALLURGY
    • C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
    • C12Q—MEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEIC ACIDS OR MICROORGANISMS; COMPOSITIONS OR TEST PAPERS THEREFOR; PROCESSES OF PREPARING SUCH COMPOSITIONS; CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL OR ENZYMOLOGICAL PROCESSES
    • C12Q1/00—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions
    • C12Q1/70—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving virus or bacteriophage
    • C12Q1/701—Specific hybridization probes
    • C12Q1/702—Specific hybridization probes for retroviruses
    • C12Q1/703—Viruses associated with AIDS
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • C—CHEMISTRY; METALLURGY
    • C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
    • C12Q—MEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEIC ACIDS OR MICROORGANISMS; COMPOSITIONS OR TEST PAPERS THEREFOR; PROCESSES OF PREPARING SUCH COMPOSITIONS; CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL OR ENZYMOLOGICAL PROCESSES
    • C12Q2600/00—Oligonucleotides characterized by their use
    • C12Q2600/158—Expression markers

Abstract

L'invention concerne un appareil capteur à base de grille flottante incluant au moins deux composants de polarisation électrique séparés par rapport à une surface de capteur à base de grille flottante au sein de l'appareil capteur à base de grille flottante. En incluant les au moins deux composants de polarisation électrique, l'appareil capteur à base de grille flottante procure des capacités renforcées pour une détection et une manipulation de biomatériaux et de non-biomatériaux tout en utilisant l'appareil capteur à base de grille flottante.
PCT/US2014/041507 2013-06-07 2014-06-09 Appareil capteur à base de grille flottante et applications d'appareil capteur à base de grille flottante apparentées WO2014197891A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US14/896,010 US10309924B2 (en) 2013-06-07 2014-06-09 Floating gate based sensor apparatus and related floating gate based sensor applications
US16/430,259 US10962501B2 (en) 2013-06-07 2019-06-03 Floating gate based sensor apparatus and related floating gate based sensor applications

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201361832218P 2013-06-07 2013-06-07
US61/832,218 2013-06-07
US201361896748P 2013-10-29 2013-10-29
US201361896813P 2013-10-29 2013-10-29
US61/896,813 2013-10-29
US61/896,748 2013-10-29

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US14/896,010 A-371-Of-International US10309924B2 (en) 2013-06-07 2014-06-09 Floating gate based sensor apparatus and related floating gate based sensor applications
US16/430,259 Continuation US10962501B2 (en) 2013-06-07 2019-06-03 Floating gate based sensor apparatus and related floating gate based sensor applications

Publications (2)

Publication Number Publication Date
WO2014197891A2 WO2014197891A2 (fr) 2014-12-11
WO2014197891A3 true WO2014197891A3 (fr) 2015-01-29

Family

ID=52008766

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2014/041507 WO2014197891A2 (fr) 2013-06-07 2014-06-09 Appareil capteur à base de grille flottante et applications d'appareil capteur à base de grille flottante apparentées

Country Status (2)

Country Link
US (2) US10309924B2 (fr)
WO (1) WO2014197891A2 (fr)

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KR102426596B1 (ko) * 2017-07-05 2022-07-29 한국전자기술연구원 가스 분자 검출 센서 및 방법
WO2019046589A1 (fr) * 2017-08-30 2019-03-07 Roswell Biotechnologies, Inc. Capteurs électroniques moléculaires à enzyme processive pour le stockage de données d'adn
US20200256826A1 (en) * 2017-10-27 2020-08-13 Uwm Research Foundation, Inc. Pulse-driven capacitive detection for field-effect transistors
US10559463B2 (en) 2017-11-30 2020-02-11 International Business Machines Corporation Multi-state device based on ion trapping
JP7140191B2 (ja) * 2018-07-31 2022-09-21 日本電気株式会社 情報処理装置、制御方法、及びプログラム
US10746694B2 (en) * 2018-11-29 2020-08-18 Globalfoundries Singapore Pte. Ltd. Integrated circuits with sensors and methods for producing the same
CN109736788B (zh) * 2018-12-10 2022-07-12 唐山冀油瑞丰化工有限公司 一种判别化学驱前缘波及状态的实验方法
US11609208B2 (en) 2019-04-12 2023-03-21 Western Digital Technologies, Inc. Devices and methods for molecule detection based on thermal stabilities of magnetic nanoparticles
US11579217B2 (en) 2019-04-12 2023-02-14 Western Digital Technologies, Inc. Devices and methods for frequency- and phase-based detection of magnetically-labeled molecules using spin torque oscillator (STO) sensors
US11738336B2 (en) 2019-04-12 2023-08-29 Western Digital Technologies, Inc. Spin torque oscillator (STO) sensors used in nucleic acid sequencing arrays and detection schemes for nucleic acid sequencing
KR102316202B1 (ko) * 2019-07-25 2021-10-21 광운대학교 산학협력단 트리플 게이트 구조의 이온전계효과 트랜지스터 기반 고성능 바이오 센서
KR102225968B1 (ko) * 2019-07-25 2021-03-09 광운대학교 산학협력단 저항형 코플래너 구조의 이온전계효과 트랜지스터 기반 고성능 바이오 센서
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EP4014042A4 (fr) 2019-08-13 2023-09-06 B.G. Negev Technologies and Applications Ltd., at Ben-Gurion University Capteur électronique destiné à être utilisé dans une analyse de contenu de solution et son procédé de fonctionnement
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Also Published As

Publication number Publication date
US20200132620A1 (en) 2020-04-30
US10309924B2 (en) 2019-06-04
US20160131613A1 (en) 2016-05-12
WO2014197891A2 (fr) 2014-12-11
US10962501B2 (en) 2021-03-30

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